EPI overlapping disks and rings

Abstract

The embodiments disclosed herein generally provide improved control of gas flow in a processing chamber. In at least one embodiment, the disk-liner assembly includes a quartz disk having an outer diameter, a plurality of holes or slots formed within the quartz disk, and a quartz ring having an inner diameter smaller than the outer diameter of the quartz disk.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to gas flow in a processing chamber. More specifically, the embodiments disclosed herein relate to overlapping disks and rings for preventing deposition on a lower window of an epitaxial deposition chamber.

Background Art

[0002]

[0002] Semiconductor substrates are processed for a wide range of applications, including the fabrication of devices for integrated circuits and micro-devices. One method of substrate processing involves depositing a material, such as a dielectric material or a conductive metal, on the upper surface of the substrate. For example, epitaxy is a deposition process in which an ultra-high purity thin layer, typically silicon or germanium, is grown on the surface of the substrate. By flowing a processing gas parallel to the surface of the substrate positioned on a support and thermally decomposing the processing gas to deposit the material derived from the processing gas on the surface of the substrate, the material can be deposited in a lateral flow chamber. The film quality in epitaxial growth depends on the accuracy of the gas flow during film deposition. For example, the flow of purge gas in the lower part of the chamber can be used to help prevent or reduce the flow of processing gas or the diffusion of the processing gas to the lower part. However, gas exchange between the flow of processing gas and the flow of purge gas may adversely affect the deposition process.

[0003]

[0003] Therefore, there is a need to improve the control of gas flow in the processing chamber.

Summary of the Invention

[0004]

[0004] Embodiments of the present disclosure generally relate to gas flow in a processing chamber. More specifically, the embodiments disclosed herein relate to an overlapping susceptor, a preheating ring, a vent liner, and the equilibration of chamber pressure.

[0005]

[0005] In at least one embodiment, a disk-liner assembly is provided. This assembly includes a quartz disk having an outer diameter, a plurality of holes or slots formed in the quartz disk, and a quartz ring having an inner diameter smaller than the outer diameter of the quartz disk.

[0006]

[0006] In at least one embodiment, an assembly for a processing chamber is provided. This assembly includes a susceptor having a substrate receiving surface, a plurality of arms coupled to and extending from the susceptor, a liner positioned radially outward from the susceptor and arms and surrounding the susceptor and arms, a disk coupled to the arms and positioned opposite the susceptor, the disk having a diameter, and a ring coupled to the liner. The ring has an inner diameter, the inner diameter of the ring being smaller than the diameter of the disk.

[0007]

[0007] In at least one embodiment, a processing chamber is provided. This processing chamber includes a chamber body in which a susceptor is disposed. The chamber body includes an upper chamber volume defined by an upper window above the plane of the susceptor and a lower chamber volume defined by a lower window and below the plane of the susceptor. A plurality of arms are coupled to the susceptor and extend from it, and a liner is disposed radially outward from the susceptor and arms, surrounding the susceptor and arms, with disks coupled to the arms and positioned opposite the susceptor. The disks have a diameter, and rings are coupled to the liner. The rings have an inner diameter, which is smaller than the diameter of the disks.

[0008]

[0008] To enable a more detailed understanding of the above-described features of the Disclosure, a more detailed description of the Disclosure, which has been briefly summarized above, can be obtained by referring to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the Disclosure, and other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0009] [Figure 1A]

[0009] This is a schematic cross-sectional view of a processing chamber according to at least one embodiment. [Figure 1B]

[0010] This is an enlarged cross-sectional view of a portion of Figure 1A. [Figure 1C]

[0011] This is an enlarged cross-sectional view of a portion of Figure 1A according to at least one embodiment. [Figure 1D]

[0012] This is an enlarged cross-sectional view of a portion of Figure 1A according to at least one embodiment. [Figure 2A]

[0013] This is a top isometric view of a separated lower liner according to at least one embodiment. [Figure 2B]

[0014] Figure 2A is a side view of the lower liner. [Figure 3]

[0015] Figure 1A is an enlarged cross-sectional view showing different susceptor and preheating ring combinations that may be used in the processing chamber. [Modes for carrying out the invention]

[0010]

[0016] For ease of understanding, the same reference numerals have been used to indicate identical elements common to the figures where possible. It is assumed that elements and features of one embodiment may be usefully incorporated into other embodiments without further description.

[0011]

[0017] The embodiments of this disclosure generally relate to gas flow in a processing chamber. More specifically, the embodiments disclosed herein relate to overlapping disks and rings for controlling gas flow in a processing chamber and preventing deposits in undesirable parts of the chamber.

[0012]

[0018] Embodiments disclosed herein provide improved control of gas flow in a processing chamber, particularly in a processing chamber having a processing gas flow at the top of the chamber and a purge gas flow at the bottom of the chamber. Embodiments disclosed herein provide overlapping disks and rings that reduce or prevent gas exchange between the upper processing gas flow and the lower purge gas flow compared to conventional devices in which a gap between a susceptor and a preheating ring allows gas exchange between them. The disks and rings also enable improved heating of the substrate while preventing or substantially reducing the accumulation of undesirable material on the lower window of the processing chamber.

[0013]

[0019] Embodiments disclosed herein help reduce or prevent the flow of purge gas to the top of the chamber, thereby preventing dilution of the process gas flow that may be detrimental to the deposition process. Some deposition processes use a low flow rate of the main carrier gas to maintain a high precursor partial pressure, for example, to achieve high dopant levels during film formation. In such processes, a high flow rate of purge gas to the top dilutes the process gas flow, which may require a reduction in the main carrier gas flow rate. If the main carrier gas flow rate is reduced to an undesirably low level, deposition uniformity is reduced, such as by insufficient adjustment of deposition uniformity by rotation. Furthermore, the purge gas flow introduces particles (e.g., metallic particles) to the top that have a detrimental effect on defect performance.

[0014]

[0020] Embodiments disclosed herein reduce or prevent the flow of process gas to the lower part of the chamber, thereby helping to prevent the deposition of undesirable material on the lower surface. For example, it may be possible to prevent the process gas from coming into contact with one or both of the back surface and / or lower window of the susceptor, causing film deposition. Either of these can result in process shifts that lead to undesirable changes in film thickness, dopant levels, and defect formation. By preventing material deposition at the lower part of the chamber, the interval between preventive maintenance associated with cleaning can be extended, increasing the uptime of the tool.

[0015]

[0021] Embodiments disclosed herein further provide a vented liner that allows for the direct exhaust of the purge gas flow from the bottom of the chamber, in contrast to a conventional ventless liner in which the purge gas flow is mixed with the process gas and exhausted from the top of the chamber. Direct exhaust of the purge gas flow from the bottom of the chamber improves the uniformity of the deposition process and the uptime of the tool, according to the mechanism described above.

[0016]

[0022] Embodiments disclosed herein provide dynamic pressure equilibration between the upper and lower parts of a chamber, in contrast to conventional processing chambers in which pressure is passively controlled at least in part based on the flow injection of processing gas, the flow injection of purge gas, and the gap size between the susceptor and the preheating ring. Dynamic pressure equilibration improves the uniformity of the deposition process and the uptime of the tool according to the mechanism described above.

[0017]

[0023] Figure 1A is a schematic cross-sectional view of the processing chamber 100. The processing chamber 100 may be used for processing one or more substrates 101, including depositing material onto the upper surface of the substrate 101. For example, the processing chamber 100 may be adapted to carry out an epitaxial deposition process. As an example, the processing chamber 100 may be configured to process a 300 mm substrate. Depending on the desired embodiment, the chamber 100 may be operated at or below atmospheric pressure.

[0018]

[0100] The processing chamber 100 generally includes a chamber body 102, a support system 104, and a controller 106. The support system 104 may include components for monitoring and / or executing one or more processes performed using the processing chamber 100, such as film deposition. The controller 106, such as a programmable computer, is coupled to the support system 104 and adapted to control the processing chamber 100 and the support system 104. The controller 106 includes a programmable central processing unit (CPU) 107 that can operate together with memory 111 (e.g., non-volatile memory) and support circuitry 113. The support circuitry 113 conventionally includes caches, clock circuits, input / output subsystems, power supplies, and combinations thereof, which are coupled to the CPU 107 and various components of the processing chamber 100.

[0019]

[0101] In some embodiments, the CPU 107 is one of any form of general-purpose computer processor (such as a programmable logic controller (PLC)) used in an industrial setting to control various monitoring system components and subprocessors. The memory 111 coupled to the CPU 107 is non-temporary and is typically one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disk drives, hard disks, or any other form of local or remote digital storage.

[0020]

[0102] In this specification, the memory 111 is in the form of a computer-readable storage medium (e.g., non-volatile memory) that includes instructions which, when executed by the CPU 107, facilitate the processing of the processing chamber 100. The instructions in the memory 111 are in the form of a program product such as a program for implementing the method of the present disclosure (e.g., middleware application, device software application, etc.). The program code may conform to any one of several different programming languages. In one example, the present disclosure may be implemented as a program product stored in a computer-readable storage medium for use with a computer system. One or more programs of the program product define the functions of the embodiments (including the methods described herein).

[0021]

[0103] Exemplary computer-readable storage media include, but are not limited to, (i) non-writable storage media in which information is permanently stored (e.g., read-only memory devices in a computer such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory), and (ii) writable storage media in which changeable information is stored (e.g., floppy disks in a diskette drive or hard disk drive or any type of solid-state random access semiconductor memory). Such a computer-readable storage medium becomes an embodiment of the present disclosure when it holds computer-readable instructions that instruct the functions of the methods described herein.

[0022]

[0024] The chamber body 102 has an upper window 108, such as a dome, a side wall 109, and a lower window 110, such as a dome, which define a processing area. Inside the processing area, a susceptor 112 for supporting the substrate 101 is arranged. The susceptor 112 can be formed of silicon carbide or graphite coated with silicon carbide. The susceptor 112 has a top surface 114 for receiving the substrate. The susceptor 112 is rotated and supported by a support column 116, and the support column 116 is coupled to respective support arms 118 extending from a shaft 120. During processing, the substrate 101 disposed on the susceptor 112 can be lifted relative to the susceptor 112 by a substrate lift arm 122 via a lift pin 124.

[0023]

[0025] The internal volume of the processing chamber 100 is divided into an upper chamber volume 134 (e.g., a processing gas region) above the plane of the susceptor 112 and a lower chamber volume 136 (e.g., a purge gas region) below the plane of the susceptor 112.

[0024]

[0026] The processing chamber 100 includes an array of radiant heating lamps 126 for heating, and among other components, the back surface 115 of the susceptor 112 and a preheating ring 132 (detailed below). Heating of the susceptor 112 and the preheating ring 132 contributes to the thermal decomposition of the processing gas onto the substrate 101 and forms one or more layers on the substrate 101. The radiant heating lamps 126 can be arranged above the upper window 108, below the lower window 110, or both, as shown in FIG. 1A. The upper window 108 and the lower window 110 may be formed of an optically transparent material such as quartz, which can facilitate the transmission of thermal radiation.

[0025]

[0027] The radiant heating lamp 126 can be positioned around the susceptor 112 in any desired manner to independently control the temperature of various areas of the substrate 101 in order to facilitate the deposition of material onto the upper surface of the substrate 101. Although not discussed in detail here, the deposited material may include, in particular, silicon germanium, gallium arsenide, gallium nitride, or aluminum gallium nitride. The thermal energy output of each radiant heating lamp 126 can be precisely controlled using the controller 106. The radiant heating lamp 126 can be configured to heat the inside of the processing chamber 100 to a temperature in the range of about 200°C to about 1600°C.

[0026]

[0028] A reflector may be optionally positioned above the upper window 108 to reflect infrared radiation emitted from the substrate 101 back to the substrate 101. The reflector may be made of a metal such as aluminum or stainless steel. Reflection efficiency can be improved by coating the area of ​​the reflector with a highly reflective coating such as gold. The reflector may be coupled to a cooling source to provide a cooling fluid, such as water, to the reflector in order to cool it.

[0027]

[0029] An upper liner 128 is positioned below the upper window 108 and is configured to prevent unwanted deposits on chamber components such as the side walls 109 or the periphery of the upper window 108. The upper liner 128 is positioned adjacent to the lower liner 130. The lower liner 130 is configured to fit within the inner circumference of the side walls 109. The lower liner 130 is positioned between the upper window 108 and the lower window 110. The lower liner 130 surrounds the lower chamber volume 136 radially outward. The upper liner 128 and the lower liner 130 may be formed from quartz.

[0028]

[0030] To support and position the preheating ring 132, the preheating ring 132 is coupled to the lower liner 130. The upper end 129 of the lower liner 130 has a profile to receive the preheating ring 132 on top. The preheating ring 132 is configured to be positioned on the outer circumference of the susceptor 112 when the susceptor 112 is in the processing position, as shown in Figure 1A. The preheating ring 132 extends radially inward from the lower liner 130. The radially overlapping portion of the preheating ring 132 and the susceptor 112 is configured to reduce or prevent gas exchange between the upper chamber volume 134 and the lower chamber volume 136, as will be described in more detail below. The preheating ring 132 may be formed from silicon carbide. The temperature of the preheating ring 132 during processing may be in the range of about 100°C to about 800°C. The heated preheating ring 132 helps to activate the processing gas flowing through the upper chamber volume 134.

[0029]

[0031] The disk 151 and ring 153 are positioned within the lower chamber volume 136 between the lower window 110 and the susceptor 112. More specifically, the disk 151 is positioned parallel to and opposite the susceptor 112 and extends across the lower chamber volume 136 around the arm 118. In one embodiment, the disk 151 is coupled to the arm 118 between the support shaft 116 and the position where the arm 118 extends radially outward from the shaft 120. In another embodiment, the disk 151 is coupled to the arm 118 at substantially the same height as the position where the support shaft 116 extends from the arm 118. The disk 151 includes a plurality of holes formed therein, which are positioned so that the lift pin 124 can extend through them. Similarly, the disk 151 includes a plurality of holes or slots through which the arm 118 extends. Thus, the disk 151 is coupled to the arm 118, and the disk 151 is movable vertically (for example, up and down within the lower chamber volume 136) and rotatable about a central axis defined by the shaft 120. In one embodiment, the disk 151 is manufactured from a single piece of material. In another embodiment, the disk 151 is manufactured from multiple pieces so that when installed in the lower chamber volume 136, the disk 151 functions substantially like a solid material and is arranged around the arm 118.

[0030]

[0032] The ring 153 is positioned within the lower chamber volume 136 adjacent to the disk 151 when the susceptor 112 is in the raised processing position. In one embodiment, the ring 153 is positioned higher than any height occupied by the disk 151. The preheating ring 153 is coupled to the lower liner 130 and extends radially inward from the lower liner 130. The disk 151 has a diameter larger than the inner diameter of the ring 153 so that the disk 151 and the ring 153 overlap each other. The outer diameter of the ring 153 is larger than the diameter of the disk 151. The overlap of the disk 151 and the ring 153 allows for further control over the management of the processing gas and purge gas within the lower chamber volume 136. For example, the overlapping nature of the disk 151 and the ring 153 can prevent or substantially reduce further movement of processing gas that passes through or is caused by the overlapping portion of the preheating ring 132 and the susceptor 112. Similarly, the purge gas introduced into the lower chamber volume 136 can be maintained below the disk 151 and ring 153. The pressure difference above and below the overlap of disk 151 / ring 153 further prevents the process gas from moving further within the lower chamber volume 136 and accumulating on the chamber surface, such as the lower window 110.

[0031]

[0033] In one embodiment, the disc 151 and ring 153 are manufactured from a quartz material. In this embodiment, the quartz material is a low-OH quartz material having an OH content of less than about 30 ppm, for example less than about 15 ppm, for example less than about 5 ppm. The transmittance of the quartz material for a desired wavelength is greater than about 90%, for example greater than about 95%, for example greater than about 98%. In another embodiment, the disc 151 and ring 153 are manufactured from different materials. For example, the disc 151 is formed from a low-OH quartz material, and the ring 153 is formed from opaque quartz or black quartz. In this embodiment, the disc 151 allows light transmission, and the ring 153 serves to block light transmission. In yet another embodiment, the disc 151 is manufactured from a low-OH quartz material, and the disc 153 is manufactured from a ceramic material such as silicon carbide.

[0032]

[0034] By using quartz material for disk 151, the effects of heating and cooling on the susceptor 112 can be reduced. For example, disk 151 is considered to have little to no significant effect on the heating of the susceptor 112, and the cooling of the susceptor 112 can be controlled by adjusting the power to the radiant heating lamp 126 when the susceptor 112 is in the lowered position. Furthermore, by using quartz material for disk 151, the effect of hydrochloric acid (HCl) cleaning on throughput can be reduced, making it possible to use HCl for cleaning the lower window 110.

[0033]

[0035] The process gas supplied from the process gas source 138 is introduced into the upper chamber volume 134 through a process gas inlet 140 formed through the side wall 109. The process gas inlet 140 extends at least partially between the upper liner 128 and the lower liner 130. The process gas inlet 140 is configured to guide the process gas generally radially inward, as indicated by the process gas flow 170. During film formation, the susceptor 112 may be positioned at a processing location (shown in Figure 1A) adjacent to the end of the process gas inlet 140 and at approximately the same height as the end, so that the process gas flows in a generally planar laminar flow state along a channel defined at least partially over the upper surface of the substrate 101. Although only one process gas inlet 140 is shown, the process gas inlet 140 may include two or more inlets for delivering two or more separate process gas flows having different compositions, concentrations, partial pressures, densities and / or velocities.

[0034]

[0036] The process gas exits the upper chamber volume 134 through an exhaust port, such as a process gas outlet 142, which is formed by penetrating the side wall 109 of the process chamber 102 opposite the process gas inlet 140. The exhaust of the process gas through the process gas outlet 142 is facilitated by a vacuum source, such as a vacuum pump 144, which is fluidically coupled downstream of the process gas outlet 142.

[0035]

[0037] The purge gas is supplied to the lower chamber volume 136 from one or more purge gas sources 148a and / or 148b. The purge gas sources 148a and 148b may be the same source as shown, or they may be different sources. The purge gas may be an inert gas, such as hydrogen or nitrogen. The flow of purge gas in the lower chamber volume 136 helps to prevent or reduce the flow or diffusion of the process gas from the upper chamber volume 134 to the lower chamber volume 136. The flow of purge gas enters the lower chamber volume 136 through one or both of the side inlets 150 formed in or around the side wall 109 or the bottom inlets 160 formed in the lower window 110. The side inlets 150 are located at a lower height than the process gas inlets 140. Distribution channels 152 are formed radially between the lower liner 130 and the side wall 109, and vertically between the side wall 109 and the lower window 110. The distribution channel 152 is fluidically coupled to the side inlet 150 to receive purge gas from the side inlet 150. The distribution channel 152 may extend 360° around the lower liner 130 to evenly distribute the purge gas around the lower chamber volume 136. The distribution channel 152 is fluidically coupled to the lower chamber volume 136 through a second channel 154. The second channel 154 is formed between the lower liner 130 and the lower window 110. The second channel 154 extends radially inward toward the lower end 131 of the lower liner 130. Alternatively, the second channel 154 may be formed through the body of the lower liner 130. The second channel 154 may be formed as a single annular channel or as a plurality of arcuate channels. The second channel 154 is positioned at a height below the process gas inlet 140. The illustrated second channel 154 is also positioned at a height below the distribution channel 152. Alternatively, the second channel 154 may be located in or above the distribution channel 152. The second channel 154 is configured to guide the purge gas into the lower chamber volume 136 generally radially inward, as indicated by the purge gas flow 172.

[0036]

[0038] The upper chamber volume 134 is defined vertically above the plane of the susceptor 112 (for example, above its substrate receiving surface 114 or above the substrate 101 placed thereon) and vertically above the preheating ring 132, vertically below the upper window 108, and radially inward of the side wall 109. The lower chamber volume 136 is defined vertically below the plane of the susceptor 112 (for example, below its back surface 115), vertically above the lower window 110, and radially inward of the lower liner 130.

[0037]

[0039] At the substrate loading position, the susceptor 112 is lowered relative to the preheating ring 132, providing a vertical gap between the radially overlapping portion of the susceptor 112 and the preheating ring 132. The substrate 101 is loaded into the chamber body 102, passes through the gap, and is discharged from the chamber body 102 through the corresponding opening in the lower liner 130 (shown in Figure 2A). At the processing position (shown in Figure 1A), the susceptor 112 is raised so that the susceptor 112 and the preheating ring 132 are positioned at a height between the end of the processing gas inlet 140 and the end of the second channel 154.

[0038]

[0040] The bottom inlet 160 is located between the shaft 120 and the lower window 110, and is directly fluidically connected to the lower chamber volume 136. The bottom inlet 160 is located at a height below the second channel 154. The bottom inlet 160 is configured to guide the purge gas into the lower chamber volume 136 generally upward and radially outward, as indicated by the purge gas flow 174. The purge gas flow 174 from the bottom inlet 160 may be configured to increase the flow of purge gas to the bottom of the lower chamber volume 136 compared to the purge gas flow 172 alone.

[0039]

[0041] The purge gas exits the lower chamber volume 136 through an exhaust port, such as a purge gas outlet 156 formed through the side wall 109. The illustrated purge gas outlet 156 is located opposite the process gas inlet 140. However, the purge gas outlet 156 may be located at any radial position along the side wall 109 relative to the process gas inlet 14. The lower liner 130 has a vent 133 (described below) for discharging the purge gas directly from the lower chamber volume 136 to the purge gas outlet 156. Exhausting the purge gas through the vent 133 and the purge gas outlet 156 is facilitated by a vacuum source, such as a vacuum pump 144, which is fluidically coupled downstream of the purge gas outlet 156.

[0040]

[0042] A differential pressure sensor 162 is configured to measure the pressure difference between the upper chamber volume 134 and the lower chamber volume 136. The differential pressure sensor 162 is coupled to the processing gas outlet 142 and the purge gas outlet 156, respectively. The differential pressure sensor 162 shown is located on the side wall 109. Alternatively, the differential pressure sensor 162 may be located adjacent to the outside of the chamber body 102, such as being coupled to the side wall 109. Measurement data from the differential pressure sensor 162 is transmitted to either or both the controller 106 and the pressure balancing valve 166 (described in detail below).

[0041]

[0043] A pressure sensor 164 is configured to measure the pressure in the upper chamber volume 134. During processing, the pressure in the upper chamber volume 134 may range from approximately 5 Torr to approximately 600 Torr. The illustrated pressure sensor 164 is located adjacent to the outside of the chamber body 102 and coupled to the side wall 109. Alternatively, the pressure sensor 164 may be located on the side wall 109. The illustrated pressure sensor 164 is coupled to the upper chamber volume 134 through the side wall 109 and the upper liner 128. Alternatively, the pressure sensor 164 may be coupled to the upper chamber volume 134 through the upper window 108, or between the upper window 108 and the side wall 109. Measurement data from the pressure sensor 164 is transmitted to either or both the controller 106 and the pressure balancing valve 166. A second pressure sensor is configured to measure the pressure in the upper chamber volume 136. Measurement data from the second pressure sensor may be transmitted to either or both the controller 106 and the pressure balancing valve 166.

[0042]

[0044] The pressure balancing valve 166 fluidly connects the process gas outlet 142 and the purge gas outlet 156, respectively, to the vacuum pump 144. The pressure balancing valve 166 can be operated by the controller 106 based on data from either or both of the differential pressure sensor 162 or the pressure sensor 164. While operating, the pressure balancing valve 166 adjusts the exhaust of process gas through the process gas outlet 142 and the exhaust of purge gas through the purge gas outlet 156 to adjust the pressure difference between the upper chamber volume 134 and the lower chamber volume 136. Equalizing the pressure between the upper chamber volume 134 and the lower chamber volume 136 can eliminate the driving force for gas exchange between them. The process design tolerance for the pressure difference may be about ±5% or less, e.g., from about ±0.1% to about ±5%, e.g., from about ±2% to about ±5%. In one example, if the pressure in the upper chamber volume 134 is 10 Torr, the lower chamber volume 136 can be maintained within a range of approximately 9.9 Torr to approximately 10.1 Torr (i.e., a tolerance of ±1%). In one example, the pressure balancing valve 166 can be operated to maintain the pressure difference between the upper chamber volume 134 and the lower chamber volume 136 at or below approximately 10%, for example, at or below approximately 5%, for example, at or below approximately 1%.

[0043]

[0045] The pressure balancing valve 166 may be used to bias the pressure difference towards either the upper chamber volume 134 or the lower chamber volume 136. In one example, the pressure balancing valve 166 may be operable to maintain the lower chamber volume 136 at a higher pressure than the upper chamber volume 134. Alternatively, the pressure balancing valve 166 may be operable to maintain the lower chamber volume 136 at a lower pressure than the upper chamber volume 134.

[0044]

[0046] Figure 1B is an enlarged cross-sectional view of a portion of Figure 1A. The susceptor 112 has a raised boundary 180 that radially outward surrounds the uppermost surface 114 that receives the substrate of the susceptor 112. The raised boundary 180 has an uppermost surface 181 that faces the upper chamber volume 134. The susceptor 112 has an outer flange 182 that extends radially outward and is configured to overlap the corresponding overlapping portion of the preheating ring 132, as will be described in more detail below. The outer flange 182 extends radially outward relative to the raised boundary 180. The uppermost surface 183 of the outer flange 182 is recessed below the uppermost surface 181 of the raised boundary 180.

[0045]

[0047] The body 184 (e.g., annular body) of the preheating ring 132 has an uppermost surface 185 facing the upper chamber volume 134. The uppermost surface 185 of the preheating ring 132 is coplanar with the uppermost surface 181 of the susceptor 112. The body 184 of the preheating ring 132 has an inner flange 186 that extends radially inward and is configured to overlap the outer flange 182 of the susceptor 112. The lower surface 187 of the inner flange 186 is recessed above (from below) the lower surface 188 of the body 184. The inner flange 186 of the preheating ring 132 is positioned above the outer flange 182 of the susceptor 112, allowing the susceptor 112 to descend relative to the preheating ring 132 for loading and unloading substrates. As shown in Figure 1B, the inner flange 186 of the preheating ring 132 and the outer flange 182 of the susceptor 112 are spaced apart from each other (for example, they are not in contact with each other). In the illustrated processing position, the vertical gap 189 between the uppermost surface 183 of the outer flange 182 of the susceptor 112 and the lower surface 187 of the inner flange 186 of the preheating ring 132 is about 1 mm or less, for example, about 0.5 mm to about 1 mm, for example, about 0.6 mm to about 0.8 mm, for example, about 0.6 mm. The body 184 of the preheating ring 132 has an outer flange 190 that extends below the lower surface 188. The outer flange 190 is in contact with the lower liner 130 and is configured to surround the raised portion of the lower liner 130, as will be detailed below.

[0046]

[0048] The lower liner 130 has an uppermost surface 191 at its upper end 129 facing the upper chamber volume 134. The uppermost surface 191 is coplanar with the uppermost surface 185 of the preheating ring 132 and the uppermost surface 181 of the susceptor 112. The lower liner 130 has an inner flange 192 extending radially inward, having an upper surface 193 configured to support the preheating ring 132 through the outer flange 190. The inner flange 192 has a raised portion 194 configured to radially fit within the outer flange 190 of the preheating ring 132 and to help hold the preheating ring 132 on the lower liner 130 and position it at its center.

[0047]

[0049] Figure 1C is an enlarged cross-sectional view of a portion of Figure 1A showing the overlapping relationship between the disk 151 and the ring 153. In the illustrated embodiment, the outer diameter 151b of the disk 151 extends radially outward beyond the inner diameter 153b of the ring 153. This arrangement of the outer diameter 151b and inner diameter 153b defines an overlap size 157. In one embodiment, the overlap size 157 is between approximately 1 mm and approximately 100 mm. The uppermost surface 151a of the disk 151 is adjacent to and positioned below the bottom surface 153a of the ring 153. A gap 161 is defined by the uppermost surface 151a and the bottom surface 153a. The size 159 of the gap 161 is approximately 1 mm or less, for example, from approximately 0.5 mm to approximately 1 mm, for example, from approximately 0.4 mm to approximately 0.8 mm, for example, approximately 0.6 mm. In this way, the positional relationship between the disk 151 and the ring 153, which defines the spatial characteristics of the gap 161, makes it possible to reduce or prevent the processing gas from passing through the gap 161.

[0048]

[0050] The ring 153 is bonded to the lower liner 130. In the embodiment shown in Figure 1C, a bonding feature 155 is formed within the lower liner 130. In this embodiment, the bonding feature 155 is a recess extending into the lower liner 130 into which a portion of the ring 153 is mounted. In this embodiment, the ring 153 is manufactured from two or more pieces to facilitate installation within the lower liner 130. In the embodiment shown in Figure 1D, the bonding feature 155 is a shoulder or rim extending radially outward from the lower liner 130, and the ring 153 rests on the bonding feature 155. In this embodiment, the ring 153 is manufactured from a single piece of material or from multiple pieces of material, depending on the desired embodiment.

[0049]

[0051] Figure 2A is a separate top isometric view of the lower liner 130 of Figure 1A. Figure 2B is a side view of the lower liner 130 of Figure 2A. Therefore, Figures 2A and 2B are described together in this specification for clarity. The lower liner 130 generally includes an annular body 202 having a first end, i.e., an upper end 129, and an opposing second end, i.e., a lower end 131 (shown in Figure 2B). When the lower liner 130 is placed in the processing chamber 100, as shown in Figure 1A, the first end 129 is located in the upper chamber volume 134 and the second end 131 is located in the lower chamber volume 136.

[0050]

[0052] A vent 133 is formed in the body 202 of the lower liner 130. The vent 133 includes one or more vents 212 arranged through the lower liner 130. As shown, one or more vents 212 are circular. In some other examples, one or more vents may be non-circular (e.g., rounded, polygonal, in the shape of an elongated slot extending circumferentially or longitudinally with respect to the lower liner, other suitable shapes, or a combination thereof). In some examples, the same lower liner may include different combinations of vents (e.g., a combination of circular holes and elongated slots). The one or more vents 212 shown extend radially through the side wall 208 of the lower liner 130. Alternatively, one or more vents 212 may extend laterally through the side wall 208 and may be parallel to each other. The lower liner 130 shown has 14 vents. However, the lower liner 130 may have any appropriate number of vents necessary to exhaust the purge gas from the lower chamber volume 136. One or more vents 212 are circumferentially aligned around the side wall 208 of the liner 130. In one example, at least one pair of one or more vents 212 are circumferentially aligned. One or more vents 212 are located within an arc-shaped portion of the lower liner 130. For example, one or more vents 212 may be located within a radial angle 214 of the liner 130. The radial angle 214 may be about 90° or less, for example about 45° or less, for example from about 30° to about 60°, for example about 45°.

[0051]

[0053] The illustrated lower liner 130 has eight raised portions 194 arranged circumferentially at equal intervals around the lower liner 130. However, the lower liner 130 may have any appropriate number of raised portions 194 necessary to help hold the preheating ring 132 on the lower liner 130 and position it in the center, as shown in Figure 1B.

[0052]

[0054] The lower liner 130 includes a plurality of tabs 218 arranged circumferentially around the outer surface 224 of the lower liner 130. The plurality of tabs 218 are configured to rest on the lower window 110 to provide a vertical gap between the lower window 110 and the conical portion 226 of the lower liner 130 in order to fluidly couple the distribution channel 152 to the second channel 154, as shown in Figure 1A.

[0053]

[0055] The lower liner 130 has an opening 220 in the side wall 208 for loading and unloading substrates. The lower liner 130 has a plurality of recesses 222 configured to form at least a portion of the processing gas inlet 140 (shown in Figure 1A). The plurality of recesses 222 are formed on the first end 129 and the outer surface 224. The plurality of recesses 222 are fluidly coupled to one another. The plurality of recesses 222 are arranged opposite each other in the circumferential direction of the vent 133.

[0054]

[0056] Figure 3 is an enlarged cross-sectional view of different susceptor and preheating ring combinations that may be used in the processing chamber 100 of Figure 1A. The susceptor 312 and preheating ring 332 are the same as those shown in Figure 1B, except for the overlapping portion. Therefore, the structure of the non-overlapping portion and the corresponding labels remain the same as in Figure 1B. In contrast to Figure 1B, the outer flange 382 of the susceptor 312 and the inner flange 386 of the preheating ring 332 overlap radially in addition to overlapping vertically, as shown in Figure 1B.

[0055]

[0057] In Figure 3, the outer flange 382 of the susceptor 312 has a first upper surface 383a and a second upper surface 383b extending above the height of the first upper surface 383a. The illustrated first upper surface 383a and second upper surface 383b are parallel to the plane of the susceptor 312. However, in some other examples, the first upper surface 383a and second upper surface 383b may be positioned at an acute or obtuse angle with respect to the plane of the susceptor 312. The inner surface 383c connects the first upper surface 383a and the second upper surface 383b. The illustrated inner surface 383c is perpendicular to the plane of the susceptor 312. However, in some other examples, the inner surface 383c may be positioned at an acute or obtuse angle with respect to the plane of the susceptor 312.

[0056]

[0058] In Figure 3, the radially inward-extending inner flange 386 of the preheating ring 332 also has a first lower surface 387a and a second lower surface 387b extending below the height of the first lower surface 387a. The illustrated first lower surface 387a and second lower surface 387b are parallel to the plane of the preheating ring 332. However, in some other examples, the first lower surface 387a and second lower surface 387b may be positioned at an acute or obtuse angle with respect to the plane of the preheating ring 332. The outer surface 387c connects the first lower surface 387a and the second lower surface 387b. The illustrated outer surface 387c is perpendicular to the plane of the preheating ring 332. However, in some other examples, the outer surface 387c may be positioned at an acute or obtuse angle with respect to the plane of the preheating ring 332. As shown, the profile of the inner flange 386 is formed to match the profile of the outer flange 382, ​​thus creating a path that further obstructs the gas flow compared to the example shown in Figure 1B. In some examples, the gas flow path in Figure 3 may be called a “serpentine path”. In some examples, the overlapping portion of the susceptor 312 and the preheating ring 332 may include additional overlapping surfaces following the same or different patterns.

[0057]

[0059] Similar to Figure 1B, the first upper surface 383a and the first lower surface 387a overlap vertically, forming a first vertical gap 389a between them, the size of which may be similar to the vertical gap 189 in Figure 1B. In Figure 3, further vertical and radial gaps are formed that obstruct the gas flow. For example, the second upper surface 383b and the first lower surface 387a overlap vertically, forming a second vertical gap 389b between them. Furthermore, the second lower surface 387b and the first upper surface 383a overlap vertically, forming a third vertical gap 389c between them. In this example, the second vertical gap 389b and the third vertical gap 389c shown are each smaller than the first vertical gap 389a. However, in some other examples, the second vertical gap 389b and the third vertical gap 389c may be the same size as or larger than the first vertical gap 389a. In this example, the second vertical gap 389b and the third vertical gap 389c shown are the same size. However, in some other examples, the second vertical gap 389b and the third vertical gap 389c may be different sizes. Furthermore, the inner surface 383c and the outer surface 387c overlap radially. In one embodiment, the second vertical gap 389b, the third vertical gap 389c, and gap 161 (see Figures 1C and 1D) are used to regulate the flow and pressure of the processing gas through gaps 389b, 389c, and 161. In this embodiment, if the size of any of the gaps 389b, 389c, and 161 changes, the size of the remaining gaps changes by the same amount. For example, if the size of gap 161 changes by 0.1 mm, the sizes of gaps 389b and 389c will also change by 0.1 mm.

[0058]

[0060] In some examples, the size of the radial gap formed between opposing surfaces to prevent contact may be larger than the vertical gap 189 in Figure 1B. Beneficially, the susceptor and preheating ring combination shown in Figure 3 can further obstruct gas flow between chamber volumes above or below the plane of the susceptor, compared to the combination shown in Figure 1B, while allowing the susceptor to be lowered relative to the preheating ring for substrate loading and unloading.

[0059]

[0061] While the above description applies to embodiments of the present disclosure, other embodiments and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure. The scope of the present disclosure is determined by the following claims.

Claims

1. A disk and ring assembly, A quartz disk having an outer diameter, A plurality of holes or slots formed within the quartz disk, A quartz ring having an inner diameter smaller than the outer diameter of the quartz disk, An assembly that includes this.

2. The assembly according to claim 1, wherein the quartz disc and the quartz ring are manufactured from a quartz material having an OH content of less than about 30 ppm.

3. The assembly according to claim 2, wherein the quartz material has a transmittance greater than about 90%.

4. The assembly according to claim 1, wherein the quartz disc is made from a light-transmitting quartz material and the quartz ring is made from an opaque quartz material.

5. The assembly according to claim 1, wherein the quartz disc is made from a light-transmitting quartz material and the quartz ring is made from a ceramic material.

6. The assembly according to claim 5, wherein the ceramic material contains silicon carbide.

7. The assembly according to claim 1, wherein the quartz disk and the quartz ring each comprise a plurality of pieces.

8. An assembly for a processing chamber, A susceptor having a substrate receiving surface, Multiple arms coupled to the susceptor and extending from the susceptor, A liner is arranged radially outward from the susceptor and the arm and surrounds the susceptor and the arm, A disk having a diameter, which is coupled to the arm and positioned opposite the susceptor, A ring having an inner diameter, coupled to the liner, wherein the inner diameter of the ring is smaller than the diameter of the disk, An assembly that includes this.

9. The assembly according to claim 8, wherein the disk and the ring are arranged in an overlapping orientation.

10. The assembly according to claim 9, wherein the disk and the ring are manufactured from a quartz material having an OH content of less than about 30 ppm.

11. The assembly according to claim 10, wherein the quartz material has a transmittance greater than about 90%.

12. The assembly according to claim 8, wherein the disc is made of a light-transmitting quartz material and the ring is made of an opaque quartz material.

13. The assembly according to claim 8, wherein the liner includes a recess and the ring is coupled to the liner within the recess.

14. The assembly according to claim 8, wherein the liner includes a rim, and the ring is coupled to the liner on the rim.

15. A processing chamber, A chamber body in which a susceptor is placed inside, The upper chamber volume defined by the upper window above the plane of the susceptor, and Lower chamber volume defined by the lower window and located below the plane of the susceptor A chamber body having, Multiple arms coupled to the susceptor and extending from the susceptor, A liner is arranged radially outward from the susceptor and the arm and surrounds the susceptor and the arm, A disk having a diameter, which is coupled to the arm and positioned opposite the susceptor, A ring having an inner diameter, coupled to the liner, wherein the inner diameter of the ring is smaller than the diameter of the disk, A processing chamber, including a processing chamber.

16. The processing chamber according to claim 15, wherein the disk and the ring are manufactured from a quartz material having an OH content of less than about 30 ppm.

17. The processing chamber according to claim 16, wherein the quartz material has a transmittance greater than about 90%.

18. The processing chamber according to claim 15, wherein the uppermost surface of the disk and the bottom surface of the ring define a gap between them.

19. The processing chamber according to claim 18, wherein the gap is less than approximately 1 mm in size.

20. The processing chamber according to claim 15, wherein the ring is positioned at a height between the height of the susceptor and the height of the disk.

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