Dichroic mirrors and short-pass filters for in-situ reflected light measurement

Abstract

Embodiments of the present disclosure generally relate to apparatus and systems for monitoring in-situ film growth rates, and also include systems for monitoring film growth on a substrate, in which a light source, collimator, dichroic mirror, and filter are all included along the propagation path and are optically connected along the propagation path. The propagation path is divided into a first subpath and a second subpath by a dichroic mirror. The first subpath is directed to a pyrometer, and the second subpath is directed to a spectrometer.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to an epitaxial chamber that integrates in-situ reflection light measurement for real-time process monitoring.

Background Art

[0002]

[0002] The measured value of the film thickness of a processed substrate can be used in relation to the processing step. Generally, the measurement of the film thickness is performed outside the processing chamber where the substrate to be processed is processed, after the processing step has been performed. Since substrates that do not meet the specifications cannot be used and multiple processing iterations may be required to obtain measured values that meet the specifications, such measurement determination may involve inefficiencies and throughput reduction.

[0003]

[0003] Furthermore, it is difficult to perform the measurement of the film thickness inside the processing chamber and during the processing step because the processing equipment inside the processing chamber may interfere with the measuring equipment, thereby inhibiting the measurement accuracy. For example, the heat emitted from the heating lamp may interfere with the measuring equipment. As another example, materials may accumulate on the window inside the processing chamber during processing, which may inhibit the measurement accuracy.

[0004]

[0004] Therefore, there is a need for improved apparatuses, systems, and methods that facilitate real-time measurement steps in-situ.

Summary of the Invention

[0005]

[0005] Embodiments of the present disclosure generally relate to apparatuses, systems, and methods for monitoring real-time in-situ reflection light measurement such that the thickness of a film on a substrate is monitored during a substrate processing step of depositing a film on the substrate in semiconductor processing. The thickness is monitored while the substrate processing step is being performed.

[0006]

[0006] In one embodiment, a system for monitoring film growth on a substrate, suitable for use in semiconductor processing, comprises a light source for directing light along a propagation path, a collimator communicating optically with the light source along the propagation path, a dichroic mirror positioned along the propagation path between the collimator and a light pipe, a pyrometer communicating optically with the dichroic mirror along a first propagation subpath downstream of the dichroic mirror, a spectrometer communicating optically with the dichroic mirror along a second propagation subpath downstream of the dichroic mirror, and a filter positioned along the propagation path between the light source and the spectrometer.

[0007]

[0007] In another embodiment, a system for monitoring film growth on a substrate, suitable for use in semiconductor processing, comprises a light source located at a first end of a propagation path, a light pipe positioned along the propagation path and in optical communication with a collimator, a dichroic mirror in optical communication with the light source, a pyrometer in optical communication with the dichroic mirror along a first propagation subpath of the propagation path downstream of the dichroic mirror, a spectrometer in optical communication with the dichroic mirror along a second propagation subpath of the propagation path downstream of the dichroic mirror, and a filter positioned along the propagation path between the light source and the spectrometer.

[0008]

[0008] In another embodiment, a system for monitoring film growth on a substrate, suitable for use in semiconductor processing, comprises a processing chamber, the processing chamber comprising a susceptor, a preheating ring surrounding the susceptor, an upper window, a lower window, and an insitu reflected light measurement system positioned adjacent to the upper window. The insitu reflected light measurement system comprises a light source for directing light along a propagation path, a collimator communicating optically with the light source along the propagation path, a dichroic mirror positioned along the propagation path between the collimator and a light pipe, a pyrometer communicating optically with the dichroic mirror along a first propagation subpath downstream of the dichroic mirror, a spectrometer communicating optically with the dichroic mirror along a second propagation subpath downstream of the dichroic mirror, and a filter positioned along the propagation path between the light source and the spectrometer.

[0009]

[0009] A more detailed description of the Disclosure, which is briefly summarized above, can be obtained by referring to embodiments, some of which are shown in the accompanying drawings, so that the above-described features of the Disclosure may be understood in more detail. However, it should be noted that the accompanying drawings are only illustrative embodiments and therefore should not be considered limiting in scope, as the Disclosure may allow for other equally valid embodiments. [Brief explanation of the drawing]

[0010] [Figure 1]

[0010] This is a schematic cross-sectional view of a system comprising an insitu reflected light measurement system for processing a substrate, according to one embodiment. [Figure 2A]

[0011] This is a partial schematic cross-sectional view of an insitu reflected light measurement (ISR) system of the system shown in Figure 1, according to one embodiment. [Figure 2B]

[0012] Figure 1 shows a partial schematic cross-sectional view of an insitu reflected light measurement (ISR) system of the system shown, according to several embodiments. [Figure 3]

[0013] This is a partial cross-sectional view of the insitu reflected light measurement system shown in Figure 1, according to one embodiment. [Figure 4]

[0014] This is a cross-sectional view of a short-pass filter adapter plate according to one embodiment. [Figure 5]

[0015] This is a schematic block diagram of a method for calibrating a susceptor for insitu reflected light measurement according to one embodiment. [Modes for carrying out the invention]

[0011]

[0016] For ease of understanding, the same reference numerals have been used to indicate identical elements common to the figures, where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0012]

[0017] Embodiments of this disclosure generally relate to epitaxial chambers that integrate in-situ reflected light measurements for real-time process monitoring in processing chambers such as epitaxial chambers. Specifically, unlike chemical vapor deposition (CVD), measurements are not typically used in epitaxial chambers due to problems arising from directional cross-flow across the substrate surface during epitaxial deposition. In CVD processes, material is uniformly deposited perpendicular to the main plane of the substrate to align with a measurement-based sensor, whereas in epitaxial deposition, the material passes perpendicular to the sensor, which has historically posed problems for real-time film thickness analysis. During processing, as material is deposited on the substrate, light from the substrate is monitored. The light is collected and analyzed by a spectrometer, computing device, and / or other optical measuring device to facilitate the determination of substrate properties such as thin film thickness, thin film deposition rate, thin film optical properties, and / or Ge concentration in the film. Multiple measurements, such as thin film thickness, thin film deposition rate, and / or substrate temperature, can be performed simultaneously using one or more measuring devices.

[0013]

[0018] Figure 1 is a schematic cross-sectional view of a system 101 for processing a substrate according to one embodiment. The system 101 includes a processing chamber 100, which is a deposition chamber and may be used as part of a cluster tool. The processing chamber 100 is used to grow an epitaxial film on a substrate such as a substrate 150. The substrate has a substrate surface on which material grows or deposits during the epitaxial process. The processing chamber 100 generates a crossflow of precursor (e.g., process gas) across the top surface of the substrate 150 during processing. The system 101 uses the processing chamber 100 configured to perform an epitaxial deposition process on the substrate 150. Aspects and advantages of the present disclosure can be used in other substrate processing processes, such as chemical vapor deposition (CVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) chambers, etching chambers, ion implantation chambers, oxidation chambers, and / or other processing chambers.

[0014]

[0019] The processing chamber 100 includes an upper housing module 102, a lower housing module 104, a chamber body assembly 106, a susceptor assembly 124, a lower window 120, and an upper window 122. The upper housing module 102 may also be part of a lid or a processing chamber lid 102. The susceptor assembly 124 is located between the susceptor assembly 124 and the lower housing module 104. The lower window 120 is located between the susceptor assembly 124 and the lower housing module 104. The upper window 122 is located between the susceptor assembly 124 and the upper housing module 102.

[0015]

[0020] The upper housing module 102 is positioned to cover the susceptor assembly 124 and is configured to heat a substrate, such as a substrate 150, placed on the susceptor assembly 124. The upper housing module 102 includes an upper module body 126 and a plurality of lamp openings 128 positioned through the upper module body 126. Each of the lamp openings 128 contains an upper lamp 130 positioned therein. Each of the upper lamps 130 is coupled to a lamp base 129. Each of the lamp bases 129 supports one of the upper lamps 130 and electrically couples each of the upper lamps 130 to a power source (not shown). Each of the lamps 129 is fixed in a generally vertical orientation within the opening 128. As described herein, the generally vertical orientation of the upper lamps 130 is approximately perpendicular to the substrate support surface of the susceptor assembly 124. However, other orientations are also possible. The vertical orientation of the upper ramp 130 does not necessarily have to be perpendicular to the substrate support surface, and can be at an angle of approximately 30° to approximately 150° with respect to the substrate support surface 153 of the susceptor assembly 124. The angle can be approximately 45° to approximately 135° with respect to the substrate support surface 153 (for example, an angle of approximately 70° to approximately 110° with respect to the substrate support surface 153).

[0016]

[0021] The upper housing module 102 includes a pyrometer passage 131 (e.g., a light pipe). The pyrometer passage 131 may be located in the center of the upper housing module 102. The upper housing module 102 may also include at least a PHR 161, a PHR sensor 221, and a PHR sensor passage 219 (shown in Figures 2A and 2B) to measure the thickness of a film on a pre-selected coupon 151 (e.g., formed of SiC) on a preheating ring (PHR) 161 which can provide reference information about the process on the substrate 150. Similar sensors can be implemented (not shown) in combination with a pyrometer for dome applications or without a pyrometer to measure parameters of the substrate edge. Because the PHR 161 is static, the PHR sensor 221 can use the reflected signal from the PHR coupon 151 without interference from rotation or vibration. The established correlation between the substrate and the known thickness of the PHR coupon 151 can be used for manufacturing process control on multiple substrates, including unknown patterned substrates, by providing a reference of known values.

[0017]

[0022] The pyrometer passage 131 extends through the upper module body 126 from a first (e.g., lower) surface of the upper module body 114 to a second (e.g., upper) surface of the upper module body 126. The pyrometer passage 131 is configured to allow light to pass between the surface of the substrate 150 and the Incident Reflected Light Measurement (ISR) system 185. The PHR sensor passage (shown in Figures 2A and 2B) 219 extends through the upper module body 126 from a first surface of the upper module body 114 to a second surface of the upper module body 126. The PHR sensor passage 219 is configured to allow light 229 to travel between the surface of the coupon 151 or the surface of the substrate 150 and the ISR system 185. The reflected signal from the PHR coupon 151 may be oriented and collected at a right angle or other adaptable angle based on hardware integration suitability. The ISR system 185 includes a housing 103 that houses one or more optical elements to facilitate processing of the optical signal.

[0018]

[0023] The upper plenum 180 is defined between the bottom surface of the upper module body 126 and the upper window 122. The upper plenum 180 is supplied with heated gas. The exhaust passage 142 for the heated gas is also disposed through the upper module body 126. The exhaust passage 142 for the heated gas is connected to the heated exhaust pump 140. The heated exhaust pump 140 removes gas from the upper plenum 180.

[0019]

[0024] The lower housing module 104 is disposed below the susceptor assembly 124 and is configured to heat the bottom surface of the substrate 150 disposed on the susceptor assembly 124. The lower housing module 104 includes a lower module body 182 and a plurality of lamp apertures 186 disposed through the lower module body 182. Each of the plurality of lamp apertures 186 includes a lower lamp 188 disposed therein. Each of the lower lamps 188 is disposed in a generally vertical orientation and is coupled to a lamp base 184. Each of the lamp bases 184 supports one of the lower lamps 188 and electrically couples each of the lower lamps 188 to a power source. As described herein, the generally vertical orientation of the lower lamps 188 is described with respect to the substrate support surface 153 of the susceptor assembly 124. It is contemplated that the orientation of the lamps may be other than generally vertical, such as an angle of about 30° to about 150° with respect to the substrate support surface 153. The angle can be about 45° to about 135° (e.g., about 70° to about 110°) with respect to the substrate support surface 153.

[0020]

[0025] During the substrate processing step, the upper lamp 130 is powered to generate radiant energy (e.g., heat) and direct that radiant energy towards the substrate 150 and the susceptor 157. During the substrate processing step, the lower lamp 188 is powered to generate upwardly directed radiant energy towards the substrate 150 and the susceptor 157.

[0021]

[0026] The lower lamp module 104 includes a susceptor shaft passage 195 and a pyrometer passage 192. The support shaft 155 of the susceptor assembly 124 is disposed through the susceptor shaft passage 195. The susceptor shaft passage 195 is disposed centrally through the lower module body 182. The susceptor shaft passage 195 enables the support shaft 155 of the susceptor assembly 124 and a part of the lower window 120 to pass through the lower module body 182.

[0022]

[0027] The pyrometer passage 192 is disposed through the lower module body 182 outside the susceptor shaft passage 195 so that a lower pyrometer 190 such as a scanning pyrometer can measure the temperature of the bottom surface of the substrate 150 or the bottom surface of the susceptor 157 of the susceptor assembly 124. The lower pyrometer 190 is disposed below the lower module body 182 adjacent to the pyrometer passage 192. The pyrometer passage 192 extends from the bottom surface to the top surface of the lower module body 182. [[ID=z]]

[0023]

[0028] The upper chamber space 111 is part of the processing space 110 where the substrate 150 is processed and one or more process gases are injected. The lower chamber space

[0029] 113 is part of the processing space 110 where the substrate 150 is loaded onto (or removed from) the susceptor assembly 124. The upper chamber space 111 can also be understood as the space above the susceptor 157 while the susceptor assembly 124 is in the processing position. The susceptor assembly 124 is shown in the lower position (e.g., the loading position of the substrate 150) in FIG. 1. The lower chamber space 113 is understood as the space below the susceptor 157 of the susceptor assembly 124 while the susceptor assembly 124 is in the processing position. The processing position is a position where the substrate 150 is disposed at or above the same level as the horizontal plane 125.

[0024] [[ID=e]]

[0029] It should be noted that there seems to be an error in the original text where "下部チャンバ空間113" is followed by "

[0029] " directly in the English translation part related to it. I've translated it as best as possible based on the context. If this is a formatting or content error in the original, it might need to be corrected for a more accurate translation.The upper cooling ring 118 and the lower cooling ring 112 are located on opposite sides of the chamber body assembly 106. The upper cooling ring 118 is located above the injection ring 116 and is configured to cool the injection ring 116. The lower cooling ring 112 is located below the injection ring 116. The upper cooling ring 118 includes a coolant passage 146 through which it is located. The coolant circulating through the coolant passage 146 may include water, oil, or other fluids. The lower cooling ring 112 includes a coolant passage 148 through which it is located. The coolant circulating through the coolant passage 148 is similar to the coolant circulating through the coolant passage 146 of the upper cooling ring 118. The upper cooling ring 118 and the lower cooling ring 112 can help to hold the injection ring 116 in place. The upper cooling ring 118 may partially support the upper ramp module 102, while the lower cooling ring 112 may partially support the lower ramp module 104.

[0025]

[0030] By using the upper cooling ring 118 and the lower cooling ring 112, the temperature of the injection ring 116 can be reduced without requiring additional cooling channels that penetrate the injection ring 116. The use of the upper cooling ring 118 and the lower cooling ring 112 reduces the manufacturing cost of the injection ring 116, which may require more frequent replacement than the upper cooling ring 118 and the lower cooling ring 112. This disclosure intends that the injection ring 116 may include one or more additional cooling passages formed within it.

[0026]

[0031] To supply a gas, such as a process gas, to the processing space 110, one or more gas injectors 108 are arranged through one or more openings in the injection ring 116. The disclosure intends that multiple gas injectors may be arranged through the injection ring 116. The gas injectors may be positioned at an angle greater than about 5° from the XY plane of the substrate 150 (e.g., an angle greater than about 10° from the XY plane). Each injector is fluidically coupled to one or more process gas sources, such as a first process gas source and / or a second process gas source. In some embodiments, only the first process gas source is utilized. In some embodiments where both the first and second process gas sources are utilized, there may be two gas outlets within each gas injector. According to some embodiments that can be combined with other embodiments, the first process gas source is a process gas and the second process gas source is a cleaning gas. The cleaning gas can be used to clean the features of the ISR system 185 and / or the features of the reflectometer system within the processing space 110.

[0027]

[0032] The upper window 122 is positioned between the injection ring 116 and the upper housing module 102. The upper window 122 is an optically transparent window through which radiant energy generated by the upper lamp module 102 can pass. The upper window 122 is made of quartz or glass material. The upper window 122 is dome-shaped and referred to as the upper dome, although a planar window is also possible. The outer edge of the upper window 122 forms one or more peripheral supports 172. The peripheral supports 172 are thicker than the central portion of the upper window 122. The peripheral supports 172 are positioned on top of the injection ring 116. The peripheral supports 172 are connected to the central portion of the upper window 122. The peripheral supports 172 are optically opaque and can be made of opaque quartz.

[0028]

[0033] The lower window 120 is positioned between the susceptor assembly 124 and the lower housing module 104. The lower window 120 is an optically transparent window through which radiant energy generated by the lower lamp module 104 can pass. The lower window 120 is made of quartz or glass material. The lower window 120 is dome-shaped and may be referred to as a lower dome, although a planar lower window 120 is also conceivable. The outer edges of the lower window 120 form a peripheral support 170. The peripheral support 170 is thicker than the central portion of the lower window 120. The peripheral support 170 is connected to the central portion of the lower window 120.

[0029]

[0034] Various liners and heaters are arranged inside the chamber body assembly 106 and within the processing space 110. As shown in Figure 1, an upper liner 156 and a lower liner 154 are arranged inside the chamber body assembly 106. The upper liner 156 is positioned above the lower liner 154 and inside the injection ring 116. The upper liner 156 and the lower liner 154 are configured to be joined together, and / or the upper liner 156 is supported on the lower liner 154. The upper liner 156 and the lower liner 154 are configured to shield the inner surface of the injection ring 116 from process gases in the processing space 110. The upper liner 156 and the lower liner 154 also play a role in reducing heat loss from the processing space 110 to the injection ring 116. The reduction in heat loss improves the heating uniformity of the substrate 150, enabling more uniform deposition on the substrate 150 during the processing steps (e.g., epitaxial deposition steps). The preheating ring (PHR) 161 is supported on a ledge 160 of the lower liner 154. The edges of the PHR 161 and the substrate are located within the radially outer region of the processing space 110.

[0030]

[0035] The upper heater 158 and lower heater 152 are also positioned within the chamber body assembly 106 and the processing space 110. As shown in Figure 1, the upper heater 158 is positioned between the upper liner 156 and the injection ring 116, while the lower heater 152 is positioned between the lower liner 154. Both the upper heater 158 and the lower heater 152 are positioned inside the chamber body assembly 106, allowing for more uniform heating of the substrate 150 while it is inside the processing chamber 100. The upper heater 158 and the lower heater 152 reduce heat loss to the walls of the chamber body assembly 106, creating a more uniform temperature distribution around the processing space 110. Both the upper heater 158 and the lower heater 152 may be configured for heated fluid to pass through, or they may be resistance heaters. The upper heater 158 and the lower heater 152 are further shaped to accommodate openings that pass through the injection ring 116, such as the substrate inlet.

[0031]

[0036] The susceptor assembly 124 is positioned within the processing space 110 and configured to support the substrate 150 during processing. The controller 196 is configured to rotate the susceptor assembly 124 and the substrate 150 during the substrate processing step. The susceptor assembly 124 includes a planar substrate support surface 153 for supporting the substrate 150 and a shaft 155 extending through the lower window 120 and part of the lower lamp module 104. The susceptor assembly 124 is coupled to a movement assembly 194. The movement assembly 194 includes, for example, one or more motors or actuators. The movement assembly 194 is coupled to the controller 196 to induce at least a central axis, rotation (stepwise or continuous) around axis A, vertical movement of the susceptor assembly 124, angular tilt of the susceptor assembly 124, or other movement. The controller 196 can report the characteristics of the susceptor assembly 124 to a spectrometer and can at least instruct the light source 244 to blink. According to some embodiments, the rotary assembly controller 196 can receive and store data.

[0032]

[0037] Figure 2A is a partial schematic cross-sectional view of the ISR system 185 of the system 101 shown in Figure 1, according to several embodiments. The ISR system 185 further includes a light source 244, a collimator 215, a sensor 245, a pyrometer 207, one or more preheat sensors 221 (two are shown), and a dichroic mirror 205 coupled to or positioned above the upper housing module 102. The ISR system 185 facilitates the measurement of one or more properties of the substrate 150 (and / or a thin film placed thereon). Exemplary properties include temperature, growth rate, thin film thickness, optical properties of the thin film, and / or Ge concentration in the thin film.

[0033]

[0038] Light source 244 is configured to generate light 241. For example, light source 244 may be a flash lamp capable of generating full-spectrum or partial-spectrum light. In one example, the spectrum of the generated light has wavelengths between approximately 200 nm and approximately 4 micrometers (e.g., 200 nm to approximately 800 nm and / or 3 micrometers to 4 micrometers). Full-spectrum light allows a wide range of optical signals for analysis, but in other embodiments, the light source may be limited to a specific wavelength or a specific wavelength range of light to achieve analysis. Light source 244 may be controlled by controller 196. Light source 244 is in optical communication with collimator 215 and directs light 241 towards collimator 215 as instructed by controller 196. Optical communication includes connection by optical fiber cable, but other optical transmission methods are also possible. The path of light traveling from light source 244 may be referred to as the propagation path. Parallel light 243 exits collimator 215 and travels through pyrometer passage 131. The pyrometer passage 131 can be made of any material (e.g., sapphire) that can transmit light of a given wavelength. The pyrometer passage 131 directs parallel light 243 to the surface of the substrate 150 (or a thin film on it), facilitating the measurement of one or more properties of the substrate 150 (or a thin film on it). In addition to, or as an alternative to, the susceptor surface, the coupon surface on the PHR 161 (or other surface) may be measured. For example, the substrate, susceptor surface, or coupon surface may be measured to establish an initial dataset of oscillation calibration indices. As used herein, the thin film and the substrate or coupon may be used interchangeably unless one or the other is explicitly excluded in the description.

[0034]

[0039] Parallel light 243 is reflected by the target measurement surface, such as the substrate 150, and returns as reflected light 227. The reflected light 227 returns through the pyrometer passage 131. The reflected light 227 exits the pyrometer passage 131 and travels along the path of the reflected light 227 to a dichroic mirror 205 aligned with the pyrometer passage 131. According to some embodiments, the dichroic mirror 205 is a transparent material with a dielectric coating. The dielectric coating may include, but is not limited to, magnesium fluoride, tantalum pentoxide, or titanium dioxide. The dichroic mirror 205 reflects certain wavelengths of light but allows other specially selected wavelengths of light to pass through. The wavelength range directed to the sensor 245 may be between about 100 nm and about 1000 nm, for example, in the range of 200 nm to 800 nm, for example, in the range of 200 nm to 400 nm, for example, in the range of 400 nm to 800 nm. The dichroic mirror 205 makes multiple light-based sensors available by directing a first desired range of light to one sensor and sending the remaining wavelengths of light to at least one other sensor. In this way, the ISR system 185 provides a compact measurement system, allowing more sensors to be mounted in a smaller footprint. The dichroic mirror 205 is positioned or oriented in a plane approximately perpendicular to the longitudinal axis of the pyrometer passage 131 at an incident angle A1 between approximately 30° and approximately 60°, for example, in the range of 35° to 55°. However, other incident angles are also possible.

[0035]

[0040] According to Figure 2A, the light reflected from the dichroic mirror 205 is transmitted along the optical path 211 to the pyrometer 207. According to some embodiments, only wavelengths of light between approximately 1.0 μm and approximately 6.0 μm, for example between approximately 3.0 μm and approximately 4.0 μm, travel along the optical path 211 to the pyrometer 207. As described above, the properties of the dichroic mirror 205 are selected to transmit or reflect light in a specific wavelength range. The light 247 that has been transmitted through the dichroic mirror 205 is made parallel by the collimator 215. The parallel light 243 is directed to the sensor 245. For example, the sensor 245 may be an optical spectrometer, a spectrometer configured to measure wavelength-resolved intensity. The sensor 245 may further include a grating, optical lenses, a filter 421 and / or a linear array photodiode detector. The filter 421 may be a short-pass filter or a dielectric filter to limit noise from the lamp 128. Dielectric filters include any thin-film based filters that can prevent light of specific wavelengths from passing through. Although filter 421 is described as part of sensor 245, filters are intended to be located elsewhere. For example, filter 421 may be part of dichroic mirror 205. Filter 421 is configured to allow only light of specific wavelengths to pass through. In one example, filter 421 allows only light with wavelengths less than 550 nm to pass through, reducing optical signal noise from the processing chamber lamp and improving measurement accuracy. Filter 421 is intended to be placed in any optical path including light reflected from substrate 150 (e.g., reflected light 227 to sensor 245) (e.g., reflected light 247 from dichroic mirror 205) (e.g., parallel light 243). In one example, filter 421 is an integrated component of sensor 245, but in other embodiments, filter 421 is a component independent of sensor 245. According to some embodiments, the filter 421 is not included in the path, reducing the cost, complexity, and footprint of the ISR system 185.The embodiments described herein may include a filter 421 and / or a dichroic mirror 205, but both the filter 421 and the mirror 205 are optional and may be excluded from any embodiment or representation described herein, as advantages may be achieved without them.

[0036]

[0041] The pyrometer 207, one or more PHR sensors 221, and sensor 245 may be connected to a controller 196 to facilitate their control and / or process. The controller 196 can store information, data, algorithms, or other control parameters for performing the operations described herein. The controller 196 includes a central processing unit (CPU), memory containing instructions, and CPU support circuitry. The controller 196 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 196 is communicably coupled to a dedicated controller, and the controller 196 functions as a central controller.

[0037]

[0042] The controller 196 includes a computer processor (e.g., a CPU) used to control various board processing chambers and equipment, as well as subprocessors on or within them. Memory, or non-temporary computer-readable media, is one or more of the following: random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disks, hard disks, flash drives, or any other form of digital storage (local or remote). Support circuits for the controller 196 are coupled to the CPU to support it. The support circuits include caches, power supplies, clock circuits, input / output circuits, subsystems, etc. Operating parameters and instructions are stored in memory as software routines that are executed or invoked to transform the controller 196 into a controller for a specific purpose and to control the operation of the system 101 described herein. The controller 196 is configured to perform any of the operations described herein. When an instruction stored in memory is executed, it causes one or more of the processes described herein to be performed.

[0038]

[0043] The ISR system 185 may optionally include one or more PHR sensors 221 positioned to receive data indicating the characteristics of the preheating ring of system 101. Each PHR sensor 221 is configured to be aligned with a PHR sensor passage 219 (e.g., vertically and / or optically aligned). The PHR sensors 221 are channels of a spectrometer or multi-channel spectrometer configured to measure the characteristics of a preheating ring (PHR), such as a PHR 161 (shown in Figure 1). In one example, each PHR sensor 221 is configured to read a reference material in or on the PHR 161 for use as a film thickness reference. For example, the reference material could be a crystalline coupon with known properties. Each PHR sensor passage 219 extends between the bottom and top surfaces of the upper module body 126. In such an example, the PHR sensor passage is vertically aligned with (and / or oriented towards) the PHR 161 (shown in Figure 1). The upper and lower ends of the PHR sensor passage 219 may be sealed with a material (such as quartz or sapphire) that can transmit light 229. In another embodiment, each PHR sensor passage 219 includes a fiber optic cable placed over it. Sensors similar to the PHR sensor 221 may be employed in system 101, either alone or in combination with a pyrometer, to analyze the substrate edge and measure the thickness and other properties of the thin film at the substrate edge, as well as the surface temperature.

[0039]

[0044] Furthermore, the preheating ring sensor 221 allows for the estimation of the film thickness on the outer periphery of the substrate 150, as the outer periphery of the substrate 150 is close to the preheating ring 161. Therefore, when deposition occurs on the preheating ring 161 during processing, the preheating ring sensor 221 can determine the film thickness on the preheating ring sensor. This thickness is an estimate of the thickness of the deposited film at the edge of the substrate 150. Thus, the film thickness at the center of the substrate 150 can be determined using measurements taken through the pyrometer passage 131, while the film thickness at the edge of the substrate 150 can be determined using measurements from the ring sensor 221. Therefore, the uniformity of the deposited film from the center to the edge is determined in situ and can be corrected if necessary. It is thought that the uniformity from the center to the edge can be corrected by changing one or more processing parameters during the deposition process. In addition, by employing a sensor similar to the PHR sensor 221 in system 101 and confirming the position of the substrate edge, the thickness of the edge film of the substrate 150 can also be measured directly.

[0040]

[0045] During processing, light from light source 244 is used to determine the film thickness and / or the film thickness deposition rate. The light is directed from light source 244 to collimator 215, for example, by an optical fiber cable. The collimator 215 directs the light to the surface to be measured (e.g., substrate 150). The light is reflected as reflected light from its surface. The reflected light from the measurement surface of substrate 150 facilitates the measurement of the film thickness (film thickness growth rate and / or intrafilm component concentration such as Ge). The reflected signal returns to a dichroic mirror and is divided into multiple paths (e.g., propagation subpaths). A first propagation subpath directs the reflected light to pyrometer 207, while a second propagation subpath directs the reflected light to collimator 215 and then to sensor 245. The light intensity collected by sensor 245 is analyzed for true reflectance and compared to a film model (e.g., Fresnel equation) using nonlinear fitting equations or other empirically derived equations to determine the film thickness.

[0041]

[0046] In one example, a film thickness model is empirically derived by obtaining absorption / reflectance data for light of a given wavelength for various films at multiple film thicknesses. The data may be collected under process conditions that approximate a given process recipe for processing future substrates, such as the process recipe in which the model is used. The data is then fitted into equations, such as nonlinear equations. The light received by sensor 245 is analyzed for intensity (e.g., the true reflectance of the light reflected from the measured subject) and fitted into the empirically derived equations to determine the film thickness. In other words, the amount of light reflected from the surface of substrate 150 varies as a function of the film thickness on the surface of substrate 150. This data and / or equations may also take into account other optical properties of the film, such as the refractive index and extinction coefficient, to improve measurement accuracy. In one example, a film thickness model is derived from the apparatus and / or method used in U.S. Patent No. 10,281,261, which is incorporated herein by reference.

[0042]

[0047] Figure 2B is a partial schematic cross-sectional view of the system shown in Figure 1 according to several embodiments. Figure 2B is similar to Figure 2A, except that the pyrometer 207 receives light 211 that has passed through the dichroic mirror 205, and the collimator 215 receives light 247 reflected from the dichroic mirror 205. The collimator 215 can then parallelize the light 247 from the dichroic mirror 205. The sensor 245 can then receive the parallel light 213. According to several embodiments which can be combined with other embodiments, the collimator 215 may receive and parallelize reflected light 227 from the substrate in front of the dichroic mirror 205. In such embodiments, the dichroic mirror 205 receives the parallel light. As shown in Figure 2B, the pyrometer 207 is located above the mirror housing 103, and the path of the reflected light 227 to the pyrometer 207 is shorter.

[0043]

[0048] The measured light intensity of the parallel light 213 is used to determine the thickness and / or growth rate of the film deposited on the surface of the substrate 150. For example, a lower light intensity may indicate a thicker film (because more light is absorbed), and a higher light intensity may indicate a thinner film (because more light is reflected).

[0044]

[0049] The thickness of the deposited film on the surface of the substrate 150 affects the light intensity of the parallel light 213 received by the sensor 245, and changes in light intensity can signal changes in the thickness of the deposited film on the surface of the substrate 150. In one or more examples, the measured spectrum of the returned parallel light 213 may be filtered to provide values ​​indicating light intensity measured only within a selected wavelength range. This wavelength range is beneficial because radiation from the lamp (e.g., the upper lamp 130) is filtered out, improving the measurement accuracy at the sensor 245. An optical filter 421 may be used to block some of the reflected light 227, including light of wavelengths outside the selected wavelength range. This may be done, for example, when light from the upper lamp 130 (or another lamp) is directed into the pyrometer passage 131, such as by being reflected off one or more internal chamber surfaces. Since unintended light can affect the measurement results at the sensor 245, filtering out unintended wavelengths improves measurement accuracy. In one or more examples, the selected wavelength range may exclude infrared light to reduce the influence of background infrared lamp radiation. In one non-limiting example, the wavelength range produced by the light source 244 is light with wavelengths in the range of approximately 200 nm to approximately 780 nm (e.g., approximately 200 nm to approximately 500 nm, or approximately 200 nm to approximately 400 nm, or approximately 500 nm to approximately 700 nm). The upper lamp 130 (or other lamps in the chamber) may be an infrared lamp. In such an example, the filter 421 filters out (restricts the path of) light in the infrared wavelength range (IR-A, IR-B, and / or IR-C), for example, light with wavelengths from 780 nm to 1.3 micrometers. Thus, the sensor 245 receives only the light generated from the light source 244, improving the measurement accuracy of the light reflected from the surface of the substrate 150. In another example, filter 421 filters out light above 500 nm (e.g., above 550 nm) because signal degradation at high temperatures (e.g., above 200°C, e.g. above 600°C) begins in the 500 nm to 550 nm range, and degradation occurs at wavelengths above that. Embodiments disclosed herein reduce interference from infrared lamp radiation and increase the signal-to-noise ratio of the photosensor 245, enabling more accurate film growth measurements.

[0045]

[0050] Sensor 245 is used to monitor the film growth rate in-situ within the processing chamber 100 and in real time during substrate processing. In-situ monitoring improves throughput compared to conventional methods because it does not require removing the substrate from the processing chamber to measure the thickness. In one embodiment, which can be combined with other embodiments, the light intensity of the return parallel light 213 is monitored continuously throughout the entire substrate processing or at predetermined intervals throughout the entire substrate processing. Once the desired film thickness is achieved, the deposition process is stopped. The substrate 150 may then be removed from the processing chamber 100, or further processing may be performed within the processing chamber 100 according to the process recipe.

[0046]

[0051] Figure 3 is a partial cross-sectional view of the ISR system 185 shown in Figure 1, according to one embodiment. The mirror housing 103 includes an upper plate 395 coupled to a side wall 396. The upper plate 395 includes an opening 397 adjacent to the collimator 215, and the side wall 396 includes an opening 398 adjacent to the pyrometer 207. The pyrometer 207 and collimator 215 are coupled to the mirror housing 103. The mirror housing 103 is made of a metal alloy such as an aluminum-containing alloy or steel and houses a dichroic mirror 205 therein. The mirror housing 103 is coupled to a cooling plate 375. The cooling plate 375 is designed to keep the mirror housing 103 at a predetermined temperature in order to extend the life of the mirror housing 103 and its components. In addition or alternatively, the cooling plate 375 maintains the dichroic mirror 205 within a temperature range of predetermined optical properties if the dichroic mirror 205 has different optical properties at different temperatures. The cooling plate 375 includes one or more coolant channels 399 formed therein and coupled to the cooling system. The cooling plate 375 is also made of a metal alloy such as an aluminum-containing alloy or steel. The cooling plate 375 includes an opening 363 formed inside it, adjacent to the pyrometer passage 131. The cooling plate 375 is located between the mirror housing 103 and the upper housing module 102 and reduces heat transfer from the upper housing module 102 to the mirror housing 103. The mirror housing 103 may include a mirror plate adapter 379 inside for supporting the dichroic mirror 205. The plate adapter 379 holds the dichroic mirror 205 in a predetermined orientation and position, such as the angle of incidence A1 (shown in Figure 2A). In one example, the mirror plate adapter 379 is coupled to the mirror housing 103, but other support configurations are also possible. The mirror plate adapter 379 facilitates proper positioning of the dichroic mirror 205 without obstructing the light propagation path. Furthermore, the mirror plate adapter 379 makes it easy to remove the dichroic mirror 205 for replacement or cleaning.

[0047]

[0052] Figure 4 is a cross-sectional view of a mirror adapter plate 379 according to one embodiment. The mirror adapter plate 379 is formed from a metal, ceramic, or polymer material and includes a recess 403 formed internally adjacent to the opening 401. The dichroic mirror 205 is placed in the recess 403 and secured by adhesive, mechanical fitting, or mechanical fasteners such as tabs. The recess 403 can be inclined at an angle A2 from the first surface 405 of the mirror adapter plate 379. Angle A2 can be used for fine-tuning the dichroic mirror 205. Angle A2 can be about 0° to about 10° relative to the first surface 405 (for example, an angle of about 0.1° to about 5° relative to the first surface 405).

[0048]

[0053] Furthermore, an adapter plate similar to the adapter plate 379 may be used to support the filter 421 within the propagation path of light generated by the light source 244. In such an example, the filter may be a circular optical element configured to filter (remove) selected wavelengths of light. Similarly, an adapter plate for the filter improves the positioning of the filter 421 and facilitates its removal for replacement or cleaning.

[0049]

[0054] Figure 5 is a schematic block diagram of method 500 for calibrating the rotation of a susceptor assembly 124. The susceptor assembly 124 includes a susceptor 157. Although method 500 is described with respect to Figures 1 and 2A for ease of explanation, it is intended that method 500 may be used in systems other than system 101 in Figure 1. Furthermore, it is intended that a controller 196 may be able to direct or otherwise control one or more embodiments of method 500. Method 500 takes into account the oscillation of the susceptor 157 while using in-situ reflected light measurement. For example, during processing, the susceptor assembly 124 (shown in Figure 1), and by extension the substrate 150 on it, rotates during processing to facilitate uniform deposition. However, due to mechanical tolerances and other factors, the susceptor assembly 124 oscillates around the longitudinal (e.g., central) axis of the support shaft 155. The vibration of the support shaft 155 induces in-plane vibration of the susceptor 157 and the substrate 150 on top of it during rotation. This in-plane vibration unintentionally changes the distance of the propagation path between the sensors in the system (e.g., sensor 245, pyrometer 207, preheating ring sensor 221) and the sample being measured (e.g., the substrate 150 and the preheating ring 161 and / or coupon on top of it). This change in propagation path distance can affect the measurement accuracy and, consequently, the accuracy of the film thickness measurement. However, method 500 mitigates the reduction in measurement accuracy caused by vibration of the susceptor assembly 124.

[0050]

[0055] Method 500 utilizes a reference substrate to determine and account for vibrations. Method 500 begins with step 502 of rotating the susceptor assembly 124 and the reference substrate on it. The reference substrate is a substrate having known physical properties, such as surface reflectance, as well as optical properties such as refractive index and extinction coefficient. The controller 196 rotates the susceptor assembly 124 continuously or in steps.

[0051]

[0056] In step 504, the light source 244 directs light onto the surface of the reference substrate along a propagation path. The light from the light source 244 is supplied at a known intensity and wavelength (or range of wavelengths), such as the wavelength range measured by the sensor 245. The light from the light source 244 is supplied to a predetermined angular position on the susceptor assembly 124. Step 504 also includes recording the angular position of the susceptor assembly 124 when the light from the light source 244 is supplied. Thus, the relationship between the angular position of the susceptor assembly 124 and the light for reference substrate measurement can be derived later, as described below. The light from the light source 244 is intended to be triggered by a controller command or in response to a physical trigger (e.g., a contact switch).

[0052]

[0057] The angular position of the susceptor assembly 124 can be determined, for example, by rotating the susceptor assembly 124 using an actuator of a known angular position (e.g., using a step encoder). In addition or alternatively, the angular position of the susceptor assembly 124 can be determined using an optical signal. In such an example, the shaft 155 of the susceptor assembly 124 may include a reflector as part of it. As the shaft 155 rotates, an optical signal is transmitted to and from the reflector by a sensor to determine the angular position of the shaft 155. It is intended that other methods for determining the angular position may be utilized, such as the use of a stepping motor with steps of known angular distances. In another embodiment, the susceptor assembly 124 may be rotated at a constant, specified speed while a stage encoder provides data related to the angular position of the susceptor assembly 124 to a controller 196. The controller 196 directs light from a light source 244 onto the substrate at predetermined intervals and associates each data spectrum collected by the sensor 245 with a known angular position of the susceptor assembly 124. In such examples, the trigger for initiating the propagation of light from light source 244 may be omitted, thereby simplifying the hardware and reducing costs.

[0053]

[0058] Step 506 includes collecting reflected light 227 from a reference substrate. A sensor 245, such as a spectrometer, receives the reflected light 227. The sensor converts the received light into spectral data. In step 508, the sensor 245 transmits the spectral data to the controller 196. In step 510, the controller 196 associates the received spectral data with the angular position of the susceptor assembly 124. Since the thickness of the reference substrate is known, inconsistent spectral data (e.g., showing variations in thickness that deviate from known values ​​of the reference substrate) may be due to vibrations of the susceptor assembly 124. The controller 196 may determine a correction factor for each angular position of the susceptor assembly 124 to account for vibrations. Thus, when the sensor 245 receives data during processing of a non-reference substrate, the correction factor is applied to the received measurement, improving the accuracy of the film thickness measurement by taking into account vibrations of the substrate and variations induced by the rotating member.

[0054]

[0059] In step 512, a combination of angular position and spectral data is used to create a dataset as a reference for reflected light measurements at the insite. The dataset is stored in the controller 196. The dataset is intended to be updated at predetermined intervals, such as when preventive maintenance is performed on the system 101. In some embodiments, machine learning or artificial intelligence can be applied to improve the collection and application of datasets for improving thin film measurements.

[0055]

[0060] This disclosure intends that steps 502-512 of method 500 can be repeated once or more to improve data acquisition and application for correlating the angular position of the susceptor assembly 124 with the received optical signal. According to some embodiments which can be combined with other embodiments, steps 502-512 are repeated for a second substrate, such as a different reference substrate, for verification and / or further refinement of previously determined correction factors.

[0056]

[0061] During substrate processing, each measurement taken by sensor 245 is corrected according to the method described above. In addition or alternatively, other methods may be employed during substrate processing to account for the vibration of the susceptor assembly. In one example, measurements are taken at the same specified angular position and only at that angular position, thereby improving consistency. In yet another example, the measurements may be averaged, or in yet another embodiment, the measurements may be plotted and a trend line or other function may be applied to account for deviations due to vibration. If the vibration generates a sinusoidal curve, a cosine function can be fitted to the data for each wavelength in the spectrum.

[0062] R fit (t) = A cos(2πft + φ) + R ave

[0063] A = Amplitude, f = Frequency (Hz), φ = Phase shift, R ave = Average signal level.

[0057]

[0064] In other examples, method 500 may be omitted from the substrate processing. In such examples, vibration correction may not be performed. In other examples, the measurements may be normalized to reduce errors at least due to rotational motion, machining tolerances, manufacturing limitations, material properties, system wear, and other possible sources of error.

[0058]

[0065] The 500 process can also be implemented by algorithm, which uses time to determine the angular position of the susceptor assembly 124. In some embodiments, the process can be retrofitted to an existing processing chamber, and two controllers are used to activate the sensor 245 to measure the angular position of the susceptor 157. The angular position of the susceptor 157 can be determined by the position sensor or by a computer algorithm using variables such as time.

[0059]

[0066] The advantages of this disclosure include real-time film growth measurement processes in-situ, accurate film growth monitoring, improved signal-to-noise ratio, use of shortened optical wavelengths, improved measurement resolution, increased efficiency and throughput, reduced machine downtime, and cost reduction. Determining the film thickness or growth rate involves measuring multiple optical intensity values ​​of reflected light over one or more time intervals. The multiple optical intensity values ​​are correlated to reference data or a physical model based on Fresnel's electromagnetic reflection equation to determine the growth rate over one or more time intervals. The growth rate can correspond to changes in optical intensity over one or more time intervals. Using the growth rate at a given time interval, the film thickness can be determined. Film thickness data can be used to improve the process. For example, if the growth rate is too high or too low, one or more process parameters can be adjusted to correct the growth rate to a target growth rate. One or more process parameters may include the flow rate of the process gas, the power supplied to the upper and / or lower lamps, the processing temperature of the substrate, the operating time over which the substrate processing process is performed, and / or the processing pressure in the processing space 110.

[0060]

[0067] It is intended that one or more embodiments disclosed herein can be combined. For example, one or more embodiments, features, components, and / or characteristics of System 101, Processing Chamber 100, and ISR System 185 may be combined. Furthermore, it is intended that one or more embodiments disclosed herein may include some or all of the aforementioned advantages.

[0061]

[0068] In addition to monitoring film growth rate, film thickness, in-film composition concentration, and temperature, aspects of this disclosure are intended to be used to monitor film composition. For example, in a SiGe film, the refractive index and extinction coefficient change as a function of germanium concentration. Therefore, a change in the refractive index of the extinction coefficient measured by sensor 245 may indicate a change in film composition during SiGe formation. Once identified, process conditions can be adjusted to promote a desired film composition. Although this particular example is described in relation to a SiGe film, aspects of this disclosure are intended to be applicable to films of other compositions as well.

[0062]

[0069] This disclosure achieves unexpected results because measuring film growth during processing in the processing space 110 of the processing chamber was thought to be subject to inaccuracies arising from the use of light emitted from the upper and lower domes and / or lamps for heating the substrate. This disclosure achieves the aforementioned advantages compared to a process in which film measurements on the substrate are performed after the substrate has been processed and removed from the processing chamber.

[0063]

[0070] This disclosure intends that terms such as “couples,” “coupling,” “couple,” and “coupled” may include, but are not limited to, fastenings by welding, interference fitting, and / or using bolts, screw connections, pins, and / or screws. This disclosure intends that terms such as “couples,” “coupled,” “couple,” and “coupled” may include, but are not limited to, forming a single unit. This disclosure intends that terms such as “couples,” “coupled,” “couple,” and “coupled” may include, but are not limited to, direct and / or indirect couplings. This disclosure intends that terms such as “couples,” “coupled,” “couple,” and “coupled” may include operable couplings such as electrical and / or fluid couplings.

[0064]

[0071] This disclosure intends that terms such as “send,” “sending,” “transmits,” “directs,” and “reflecting” light may include, but are not limited to, incident light, parallel light, light in an optical cable, light in an optical wire, full-spectrum light, and / or light filtered by wavelength. This disclosure intends that terms such as “transparent” and / or “opaque” may include, but are not limited to, the properties of materials that allow light to pass through completely and / or partially.

[0065]

[0072] While the foregoing applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the fundamental scope of the present disclosure. The present disclosure is also intended to allow one or more aspects of the embodiments described herein to be replaced by one or more of the other aspects described herein. The scope of the present disclosure is determined by the following claims.

Claims

1. A processing chamber including a susceptor assembly for supporting the substrate, A thermometer and Sensors and, A dichroic mirror receives light from the substrate and divides the light into a first subpath to the thermometer and a second subpath to the sensor. A substrate processing system comprising the above.

2. The system according to claim 1, wherein the sensor is a spectrometer.

3. moreover, A light source for generating light that is directed to the substrate and reflected as reflected light. The system according to claim 1, comprising the light received by the dichroic mirror, wherein the light includes the reflected light.

4. moreover, Reflected light measurement system including the light source, the thermometer, the sensor, and the dichroic mirror Equipped with, The system according to claim 3, wherein the processing chamber includes an upper module having a plurality of lamps, and the reflected light measuring system is coupled to the upper module.

5. The system according to claim 3, further comprising a collimator that is in optical communication with the light source.

6. The system according to claim 3, wherein the light generated by the light source includes wavelengths between 200 nm and 800 nm.

7. The filter further includes a dielectric material that prevents transmission of wavelengths greater than approximately 500 nm. The dichroic mirror is configured to direct light wavelengths between approximately 200 nm and approximately 800 nm towards the sensor. The system according to claim 1, wherein the dichroic mirror is configured to direct wavelengths of light between approximately 1.0 μm and approximately 6.0 μm towards the pyrometer.

8. A system for monitoring one or more characteristics of a substrate, suitable for use in semiconductor processing, wherein the system is A light source is positioned at the first end of the propagation path, Light pipes arranged along the aforementioned propagation path, A dichroic mirror that is in optical communication with the aforementioned light source, A sensor that is in optical communication with the dichroic mirror along the first propagation subpath of the propagation path downstream of the dichroic mirror. A system that includes these features.

9. The system according to claim 8, further comprising a pyrometer that is in optical communication with the dichroic mirror along a second propagation subpath of the propagation path downstream of the dichroic mirror, wherein the second propagation subpath is a light path reflected from the dichroic mirror to the pyrometer, and the first propagation subpath is a light path that passes through the dichroic mirror to the sensor.

10. The system according to claim 8, wherein the light source is a flash lamp, and the dichroic mirror is configured to direct wavelengths of light between approximately 200 nm and approximately 800 nm along the first propagation subpath.

11. The system according to claim 8, wherein the dichroic mirrors are arranged along the propagation path at incident angles between approximately 40° and approximately 50°.

12. The system according to claim 9, wherein the dichroic mirror is configured to direct wavelengths of light between approximately 3.0 μm and approximately 4.0 μm along the second propagation subpath.

13. The system according to claim 12, wherein the dichroic mirror is configured to direct wavelengths between approximately 200 nm and approximately 800 nm along the first propagation subpath.

14. The system according to claim 8, further comprising an adapter plate supporting the dichroic mirror, wherein the adapter plate positions the dichroic mirror along the propagation path at an incident angle between approximately 40° and approximately 50°.

15. Mirror housing attached to the cooling plate The system according to claim 8, further comprising:

16. A method for monitoring one or more characteristics of a substrate during a semiconductor manufacturing process, Processing the substrate in a processing chamber, The light from the aforementioned substrate is received by a dichroic mirror, The dichroic mirror is used to split the light along a first subpath to the pyrometer and a second subpath to the sensor. Methods that include...

17. The method for directing light according to claim 16, wherein the wavelength of the light from the dichroic mirror to the sensor is between approximately 200 nm and approximately 800 nm, and the wavelength of the light from the dichroic mirror to the pyrometer is between approximately 3.0 μm and approximately 4.0 μm.

18. A method for directing light according to claim 16, further comprising filtering out wavelengths of light greater than approximately 550 nm.

19. The method for directing light according to claim 16, wherein the light enters the processing chamber and exits the processing chamber through a light pipe located in the lid of the processing chamber.

20. The method for directing light according to claim 16, further comprising making the light received from the dichroic mirror parallel.

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