System and method for controlling the supply of multiple gases to a plasma chamber

Abstract

A system and method for supplying multiple gases are described. One system includes a gas adapter having a plenum. The system further includes a first gas line coupled to the gas adapter for transporting a first process gas to the plenum. The system includes a second gas line coupled to the gas adapter for transporting a second process gas to the plenum. The first and second process gases are transported while maintaining their temperatures. The gas adapter mixes the first process gas with the second process gas under vacuum to produce a gas mixture for supplying the gas mixture to the internal volume of a plasma chamber.

Description

Technical Field

[0001] This embodiment relates to a system and method for controlling the supply of multiple gases to a plasma chamber.

Background Art

[0002] The description of the background art provided herein is for the purpose of generally presenting the context of the present disclosure. To the extent described in this background art section, the research of the present inventors, as well as aspects of the description that may not be recognized as prior art at the time of filing, are not expressly or implicitly recognized as prior art to the present disclosure.

[0003] The chamber includes an electrostatic chuck housed within the volume of the chamber. A semiconductor wafer is placed on top of the electrostatic chuck. Thereafter, one or more gases are supplied to the volume of the chamber to etch the semiconductor wafer. However, the semiconductor wafer is not etched in a desired manner.

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present disclosure provide a system, apparatus, method, and computer program for controlling the supply of multiple gases to a plasma chamber. It should be understood that this embodiment can be implemented in many ways, such as, for example, a process, an apparatus, a system, a device, or a method on a computer-readable medium. Some embodiments are described below.

Means for Solving the Problems

[0006] In one embodiment, selective removal of stack layers, such as silicon germanium (SiGe) or another layer, is crucial for device fabrication. Generally, processes for selective removal use a gas mixture such as 20% fluorine (F2) and 80% argon (Ar) or another gas mixture. The fluorine in this mixture is used in a thermal reaction to remove the stack layers. By adding other chemicals, such as hydrogen, parameters such as selectivity and homogeneity can be adjusted during selective removal. The systems and methods described herein allow for independent, interconnected flows of fluorine-based gases and other gases, such as hydrogen-based gases. The system includes a dual injector positioned above a gas diffuser for a plasma reactor. This reduces safety concerns by mixing the gases in the plasma reactor and under vacuum, rather than in a gas box or delivery line.

[0007] In one embodiment, a system for supplying multiple gases to a plasma chamber is described. The system includes a gas adapter having a body, a first hole formed inside the body, a second hole formed inside the body, and a plenum. The system further includes a first gas line coupled to the gas adapter at the opening of the first hole. The first gas line transports a first process gas to the plenum through the first hole. The system also includes a second gas line coupled to the gas adapter at the opening of the second hole. The second gas line transports a second process gas to the plenum through the second hole. The first process gas is transported through the first gas line and the second process gas is transported through the second gas line, while maintaining the first temperature of the first process gas within a first predetermined range and the second temperature of the second process gas within a second predetermined range. The first and second temperatures are lower than a third temperature achieved by mixing the first and second process gases at atmospheric pressure. The gas adapter mixes a first process gas with a second process gas under vacuum to generate a gas mixture for supplying the gas mixture to the internal volume of the plasma chamber.

[0008] In one embodiment, a method for supplying a plurality of gases to a plasma reactor for processing a substrate is described. The method includes the step of receiving a first process gas from a first gas line. The first process gas is received by a gas adapter coupled to the first gas line. The method includes the step of transferring the first process gas from the gas adapter to the volume of the plasma reactor via a diffuser in order to etch a first portion of the stacked layers of the substrate. The method further includes, after receiving the first process gas via the first gas line, obtaining a first process gas from the first gas line and a second process gas from a second gas line. The first process gas is obtained via the first gas line, and the second process gas is obtained via the second gas line by a gas adapter coupled to the second gas line. The first process gas is obtained from the first gas line, and the second process gas is obtained from the second gas line, while simultaneously maintaining the first temperature of the first process gas and the second temperature of the second process gas within a first predetermined range. The first and second temperatures are lower than the third temperature achieved by mixing the first process gas with the second process gas at atmospheric pressure. The method also includes the step of mixing the first and second process gases under vacuum in a gas adapter to produce a gas mixture. The method includes the step of supplying the gas mixture from the gas adapter through a diffuser to the volume of a plasma reactor to etch a second portion of the stack layer.

[0009] In one embodiment, a plasma system for supplying a plurality of gases to a plasma chamber is described. The plasma system includes a gas box, a gas adapter, and a first gas line coupled to the gas adapter and the gas box. The first gas line transports a first process gas. The plasma system further includes a second gas line coupled to the gas adapter and the gas box. The second gas line transports a second process gas. The first process gas is transported via the first gas line and the second process gas is transported via the second gas line while maintaining the first temperature of the first process gas and the second temperature of the second process gas within predetermined ranges. The first and second temperatures are lower than a third temperature achieved by mixing the first and second process gases at atmospheric pressure. The gas adapter mixes the first process gas with the second process gas under vacuum to produce a gas mixture for supplying the gas mixture to the internal volume of the plasma chamber.

[0010] Some advantages of the systems and methods described herein include providing separate flows of two reactive process gases to a gas adapter via two separate gas lines. By providing separate flows, the process gases do not react with each other under atmospheric pressure, but rather mix with each other under vacuum within the plenum of the gas adapter to form a gas mixture. The gas mixture is transferred from the plenum to a plasma reactor of a certain volume via a diffuser for processing the substrate.

[0011] Other embodiments will become apparent from the following detailed description in conjunction with the attached drawings.

[0012] Embodiments can be best understood by referring to the following description in conjunction with the attached drawings. [Brief explanation of the drawing]

[0013] [Figure 1] This is a diagram illustrating one embodiment of a system for showing a gas line coupled to a gas adapter. [Figure 2]This is a diagram illustrating one embodiment of a plasma system to explain the function of the plasma system. [Figure 3] This is one embodiment of a graph showing first and second predetermined temperature ranges for process gases flowing through different gas lines. [Figure 4] This is a diagram of one embodiment of a system that demonstrates that the temperature of a process gas is maintained within a first predetermined range as the flow of the process gas increases, and the temperature of another process gas is maintained within a second predetermined range as the flow of another process gas increases. [Figure 5A] This figure shows one embodiment of a substrate before it is heat-treated using the plasma system shown in Figure 2. [Figure 5B] This figure shows one embodiment of a substrate to illustrate the etching of the substrate shown in Figure 5A using a process gas. [Figure 5C] This figure shows one embodiment of a substrate to illustrate the etching of the substrate in Figure 5B using a gas mixture. [Figure 6] This is a flowchart illustrating one embodiment of a method for describing the processing of the substrate in Figure 1 by applying process gases and gas mixtures. [Modes for carrying out the invention]

[0014] The following embodiments describe systems and methods for controlling the supply of multiple gases to a plasma chamber. It will be apparent that these embodiments can be carried out without some or all of these specific details. In other examples, well-known process operations are not described in detail so as not to unnecessarily obscure these embodiments.

[0015] Figure 1 is a diagram of one embodiment of system 100 showing a gas line 102 coupled to a gas adapter 104. System 100 includes gas line 102, gas adapter 104, another gas line 106, a diffuser 108, and a plasma chamber 110. An example of gas line 102 is a tube or pipe made from one of several metals, such as stainless steel. An example of gas line 106 is a tube, which is a tube or pipe made from one of several metals, such as stainless steel.

[0016] An example of a gas adapter 104 is a seal that seals the diffuser 108 at the left flange portion 112 and the right flange portion 113 of the diffuser 108, forming a plenum 114 surrounded by the body 101 of the gas adapter 104 and the body 109 of the diffuser 108. For example, each of the gas adapter 104 and the diffuser 108 is made of a dielectric material such as quartz. The flange portions 112 and 113 form a flange such as a rim or collar of the gas adapter 104. Note that the terms body and housing are used interchangeably herein.

[0017] The main body 101 includes an upper wall 116, a right wall 118, a bottom wall 120, and a left wall 122. For example, a portion of the main body 101 extends horizontally between walls 122 and 118 and vertically between walls 116 and 120, and the main body 101 includes the flange of the gas adapter 104. The bottom wall 120 is the wall of the flange of the gas adapter 104. The left wall 122 includes a first portion 124, a second portion 126, a third portion 128, and a fourth portion 130. An example of portions 124, 126, 128, and 130 is a surface. The first portion 124 is oriented perpendicular to the y-axis, the second portion 126 is also oriented perpendicularly, and the fourth portion 130 is also oriented perpendicularly. The third portion 128 is oriented horizontally in the x-axis direction perpendicular to the y-axis. The first section 124 extends from the upper wall 116 to the horizontal level of the second section 126. The second section 126 extends from the horizontal level of the first section 124 to the third section 128. The third section 128 extends from the second section 128 to the fourth section 130.

[0018] Also, the second portion 126 is located inside the first portion 124 and the fourth portion 130 in the x-axis direction, for example, in a concave shape, and forms a concave cavity with respect to the portions 124 and 130. The z-axis is perpendicular to each of the x-axis and the y-axis. The upper wall 116 is horizontally oriented, the right wall 118 is vertically oriented, and the bottom wall 120 is horizontally oriented.

[0019] Note that components such as a portion or a wall or a hole or a section or a part or an extension are vertically oriented when the component is in the direction of the y-axis. For example, if a component extends along the y-axis, the component is in the direction of the y-axis. Illustratively, if a component is parallel or substantially parallel to the y-axis, the component extends along the y-axis. In the figure, the component is substantially parallel to the y-axis and forms an angle of 0 degrees to 10 degrees with respect to the y-axis.

[0020] Further note that components such as a portion or a wall or a hole or a section or a part or an extension as described in this specification are horizontally oriented when the component is in the direction of the x-axis. For example, if a component extends along the x-axis, the component is in the direction of the x-axis. Illustratively, if a component is parallel or substantially parallel to the x-axis, the component extends along it. In the figure, when the component forms an angle of 0 degrees to 10 degrees with respect to the x-axis, the component is substantially parallel to the x-axis.

[0021] The upper wall 116 is adjacent to the right wall 118 and the left wall 122. Between the bottom wall 120 and the right wall 118, there is a right flange portion 132 of the gas adapter 104. Also, between the bottom wall 120 and the left wall 122, there is a left flange portion 134 of the gas adapter 104. The flange portions 132 and 134 form the flange of the gas adapter 104. The left flange portion 134 is continuous adjacent to the left wall 122 and continuous adjacent to the bottom wall 120. The left flange portion 134 extends along the x-axis from the left wall 122. Similarly, the right flange portion 132 is continuous adjacent to the right wall 118 and continuous adjacent to the bottom wall 120. The right flange portion 132 extends along the x-axis from the right wall 118. Inside the gas adapter 104, an upper portion 114A of the plenum 114 is formed, and inside the diffuser 108, a bottom portion 114B of the plenum 114 is formed.

[0022] The plenum 114 is vertically oriented within the gas adapter 104 and the diffuser 108. For example, the upper portion 114A is vertically oriented within the gas adapter 104, and the bottom portion 114B is vertically oriented within the diffuser 108.

[0023] The gas line 102 is connected to the upper portion 114A via a hole 140. For example, the hole 140 connects to the gas line 102 at one end, such as an opening 103, and to the upper portion 114A at the other end. In this example, the opening 103 is the hole 140 which is horizontally oriented and extends into the body 101 of the gas adapter 104. For example, the gas line 102 is connected to the opening 103 via a connector system such as a clamp 136 and an O-ring 138, and then connected to the gas adapter 104 at the opening 103. In another example, the O-ring 138 surrounds the extension of the gas adapter 104, the gas line 102 extends over the O-ring 138, and the clamp 136 extends over the gas line 102 to connect the gas line 102 to the gas adapter 104. In the illustration, the extension of the gas adapter 104 is horizontally oriented. As yet another example, a connector system such as a connector gas line (not shown), including a pipe or tube or hollow extension, is coupled between the gas line 102 and the hole 140, thereby connecting the gas line 102 to the hole 140. Further explanation: an O-ring 138 fits around the first end of the connector gas line, which extends into the hole 140 so as to fit into the hole 140 via the O-ring 138; another O-ring (not shown) fits around the second end of the connector gas line, which extends into the hollow portion of the gas line 102 so as to fit into the gas line 102 via another O-ring (not shown) so as to join the gas line 102 to the connector gas line. The O-rings are examples of fittings.

[0024] Note that hole 140 is not a through hole extending along the width of the body 101 of the gas adapter 104. For example, the width extends horizontally from the left wall 122 to the right wall 118. Furthermore, in this example, hole 140 extends from the left wall 122 to the upper portion 114A. For example, hole 140 is drilled into the body 101. In another example, the body 101 is molded in a molding machine to have hole 140.

[0025] The hole 140 is oriented horizontally to join with the upper portion 114A of the plenum 114 so as to open into the plenum 114. For example, the hole 140 is continuous with the upper portion 114A of the plenum 114 so as to form an opening to the plenum 114.

[0026] Similarly, the gas line 106 is connected to the upper portion 114A via the hole 142. For example, the hole 142 connects to a connecting gas line 144, which is connected to the gas line 106, at one end such as the opening 105, and connects to the upper portion 114A at the opposite end. In this example, the opening 105 is the hole 142, which is horizontally oriented inside the body 101 of the gas adapter 104. For example, the gas line 106 is connected to the opening 105 via a connector system such as a connecting gas line 144, an O-ring 146, and a clamp 148, and is connected to the gas adapter 104 at the opening 105. In another example, the connector system is connected between the gas line 106 and the hole 142 to connect the gas line 106 to the hole 142. In yet another example, the O-ring 146 extends into a groove formed within the body 101 of the gas adapter 104, and the clamp 148 extends around the connecting gas line 144 and the O-ring 146 to clamp the connecting gas line 144 into the hole 142. In yet another example, the connecting gas line 144 is coupled to the gas line 106 at one end via an O-ring (not shown) to join with the gas line 106. The hole 142 is located vertically below the hole 140.

[0027] Note that hole 142 is not a through hole extending along the width of the body 101 of the gas adapter 104. Furthermore, in this example, hole 142 extends from the left wall 122 to the upper portion 114A. For example, hole 142 is drilled into the body 101. In another example, the body 101 is molded in a molding machine to have hole 142.

[0028] Note that clamp 136 fits into the first portion 124 of the left wall 122, and clamp 148 fits into the second portion 126 of the left wall 122. For example, clamp 148 is adjacent to clamp 136. Further note that gas line 102 is adjacent to gas line 106. For example, there are no other gas lines between the two gas lines 102 and 106.

[0029] The hole 142 is oriented horizontally to join with the upper portion 114A so as to open into the plenum 114. For example, the hole 142 is continuous with the upper portion 114A so as to form an opening to the plenum 114.

[0030] The main body 101 has main body portion 107 and main body portion 109. Main body portion 107 includes a first portion 124, a portion of the right wall 118, a hole 140, and a first portion of the upper portion 114A. Main body portion 109 includes a second portion 126, a portion of the right wall 118, a hole 142, and a second portion of the upper portion 114A. Main body portion 107 is located above main body portion 109 and is integral with main body portion 109.

[0031] Note that hole 142 is parallel or substantially parallel to hole 140. For example, if hole 140 forms an angle of 0 to 10 degrees with respect to hole 142, then hole 142 is substantially parallel to hole 140.

[0032] The flange of the gas adapter 118 connects to the flange of the diffuser 108 to form a plenum 114 that is continuous across the height of the diffuser 108 and the height of the gas adapter 104. The heights used herein are measured along the y-axis.

[0033] Below the flange of the diffuser 108 are the left portion 150 and the right portion 152 of the wall of the plasma chamber 110. The flange of the diffuser 108, the flange of the gas adapter 104, and the wall of the plasma chamber 110 are held together by clamps 154 and 156.

[0034] The bottom portion 114B of the plenum 114 and the diffuser 108 extend into the internal volume 158 of the plasma chamber 110. The bottom wall 160 of the diffuser 108 has a number of openings 162, such as outlets or holes, that extend through the bottom wall 160 to open into the internal volume 158 of the plasma chamber 110.

[0035] A vacuum is generated within the internal volume 158 of the plasma chamber 110. For example, a vacuum pump, as described later, generates a vacuum within the internal volume 158. The vacuum generated within the internal volume 158 extends into the plenum 114. After a vacuum is generated within the internal volume 158 and the plenum 114, process gas 166 is transferred to the upper portion 114A of the plenum 114 via gas line 102, opening 103, and hole 140, and another process gas 168 is transferred to the upper portion 114A via gas line 106, connecting gas line 144, opening 105, and hole 142. An example of process gas 166 is a fluorine-containing gas such as nitrogen trifluoride (NF3), carbon tetrafluoride (CF4), sulfur hexafluoride (SF6), silicon tetrafluoride (SiF4), fluorine (F2), or fluorine mixed with argon. For example, a mixture of fluorine and argon contains 20 percent (%) fluorine and 80% argon. An example of process gas 168 is methane (CH4), ethane (C2H6), propane (C3H8), butane (C4H 10 These are hydrogen-containing gases such as fluorine (H2). Note that the terms fluorine-containing gas and fluorine-based gas are used interchangeably herein, and the terms hydrogen-containing gas and hydrogen-based gas are used interchangeably herein.

[0036] Process gases 166 and 168 are highly reactive with each other under atmospheric pressure. For example, under atmospheric pressure such as 1 atmosphere (atm), process gas 166 mixes or reacts with process gas 168 to produce an exothermic reaction, releasing a large amount of heat.

[0037] Process gases 166 and 168 are simultaneously received by the gas adapter 104 through gas lines 102 and 106 and holes 140 and 142, and are mixed with each other in the upper portion 114A of the plenum 114 to form a gas mixture 170 under vacuum within the plenum 114. An example of the gas mixture 170 is a mixture of a fluorine-containing gas and a hydrogen-containing gas. For example, the gas mixture 170 is fluoromethane (CH3F). The gas mixture 170 flows vertically along the y-axis from the upper portion 114A to the bottom portion 114B of the plenum 114 and exits through the opening 162 from the diffuser 108 into the internal volume 158 of the plasma chamber 110. When the gas mixture 170 exits the diffuser 108 into the internal volume 158, the internal volume 158 is under vacuum.

[0038] In one embodiment, process gas 168 is transported via gas line 102, and process gas 166 is transported via gas line 106.

[0039] In one embodiment, one or more of the gas lines 102 and 106 are bent in one or more portions of the gas line.

[0040] In one embodiment, gas lines 102 and 106, clamps 136 and 148, and holes 140 and 142 may be referred to herein as a double gas injector.

[0041] In one embodiment, gas lines 102 and 106, clamps 136 and 148, and holes 140 and 142, as well as portion 114A, may be referred to herein as a double gas injector.

[0042] Figure 2 is a diagram of one embodiment of the plasma system 200 to illustrate the function of the plasma system 200. The plasma system 200 includes a plasma reactor 202, a controller 204, a source radio frequency (RF) generator 206, a matcher 208, a bias RF generator 210, a matcher 212, a gas box 214, a temperature sensor 216, another temperature sensor 218, a temperature sensor 220, a direct current (DC) power supply 222, a switch system 224, a vacuum pump 226, a driver 227, and a valve 228.

[0043] An example of a gas source is a container or volumetric enclosure. Similarly, an example of a gas box is a container or volumetric enclosure. An example of a controller includes a processor and a memory device. For example, the functions described herein by controller 104 are performed by the processor of controller 104. The controller's processor is coupled to the controller's memory device. An example of a matching circuit, as used herein, includes an impedance matching circuit and an impedance matching network. An example of a temperature sensor described herein includes a thermocouple. An example of a switch system 224 includes one or more switches, such as transistors. An example of a driver, as used herein, includes one or more transistors.

[0044] The gas box 214 houses multiple gas sources, such as gas source 1 and gas source 2. The gas box 214 also houses multiple valves, such as valve 1 and valve 2. The system 200 further includes driver DRVR1 and another driver DRVR2. The RF coil 228 surrounds portions 150 and 152 of the wall of the plasma chamber 110. The RF coil 228 has two turns.

[0045] The plasma reactor 202 includes an upper section 230, an intermediate section 232, and a bottom section 234. The upper section 230 is the plasma chamber 110. The intermediate section 232 includes an outlet 236 with multiple holes, such as through holes, and a shower head 238. An example of the outlet 236 is a plate, and an example of the shower head 238 is a plate with multiple openings. The multiple holes in the outlet 236 extend from the internal volume 158 to the intermediate volume 240 located between the outlet 236 and the shower head 238. The bottom section 234 includes a substrate support 242, such as an electrostatic chuck (ESC). A heater system 244, such as a heater element, is embedded within the substrate support 242. An example of a heater element is a resistor. The bottom section 234 further includes a bottom volume 246 between the shower head 238 and the substrate support 242.

[0046] The bottom portion 234 has a bottom wall 248 and a side wall 250. The bottom wall 248 is oriented horizontally, and the side wall 250 is oriented vertically. There is a hole 252 inside the side wall 250. The hole 252 is oriented horizontally within the side wall 250.

[0047] The controller 204 is coupled to the RF generators 206 and 210. The source RF generator 206 is coupled to the matching unit 208, and the bias RF generator 210 is coupled to the matching unit 212. The matching unit 208 is coupled to the RF coil 228. The matching unit 212 is also coupled to a lower electrode embedded in the substrate support 242. For example, the lower electrode is located above or below the heater system 244. The controller 204 is also coupled to the switch system 224. The DC power supply 222 is coupled to the switch system 224, which is coupled to the heater system 244.

[0048] Gas source 1 is connected to valve 1, which is connected to gas line 102. For example, valve 1 is connected between gas source 1 and gas line 102. Similarly, gas source 2 is connected to valve 2, which is connected to gas line 106. For example, valve 2 is connected between gas source 2 and gas line 106.

[0049] Temperature sensor 216 is coupled to a point on gas line 102, and temperature sensor 218 is coupled to a point on gas line 106. For example, temperature sensor 216 is in physical contact with gas line 102, and temperature sensor 218 is in physical contact with gas line 106. Temperature sensor 220 is coupled to connector 201, such as an outflow delivery line or pipe, which connects the opening 252 to the vacuum pump 226 via valve 228. Temperature sensors 216, 218, and 220 are coupled to controller 204. Valve 228 is coupled to the opening 252 and the vacuum pump 226 via connector 202. Valve 228 is coupled to driver 227, which is coupled to controller 204. Controller 204 is also coupled to drivers DRVR1 and DRVR2, with driver DRVR1 coupled to valve 1 and driver DRVR2 coupled to valve 2.

[0050] Process gas 166 is stored in gas source 1, and process gas 168 is stored in gas source 2. The substrate S is placed on the upper surface of the substrate support 242 for processing such as etching the substrate S, depositing material onto the substrate S, cleaning the substrate S, or a combination thereof. After the substrate S is received into the bottom volume 246 of the plasma reactor 202 and placed on the substrate support 242, the controller 204 sends an open control signal to the driver 227. Upon receiving the open control signal from the controller 204, the driver 227 generates a current signal and sends it to the valve 228, opening the valve 228. The vacuum pump 226 is turned on, and a vacuum is created in the plenum 114, the internal volume 158, the intermediate volume 240, and the bottom volume 246.

[0051] After a vacuum is generated in the plenum 114, internal volume 158, intermediate volume 240, and bottom volume 246, the controller 204 controls the valve 228 to close. For example, the controller 204 sends a close control signal to the driver 227. Upon receiving the close control signal from the controller 204, the driver 227 generates a current signal and sends it to the valve 228 to close the valve 228.

[0052] Furthermore, after a vacuum is created in the internal volume 158, the intermediate volume 240, and the bottom volume 246, and valve 228 is closed, the controller 204 controls one or both of valves 1 and 2 to control the supply of one or both of process gases 166 and 168. For example, to allow simultaneous flow of process gases 166 and 168, the controller 204 sends an open control signal to driver DRVR1 and another open control signal to driver DRVR2. Upon receiving the open control signals, driver DRVR1 generates an open current signal and sends the open current signal to valve 1 to open valve 1. Similarly, in response to receiving the open control signal, driver DRVR2 generates a current signal and sends the current signal to valve 2 to open valve 2. When valves 1 and 2 are open, process gas 166 flows from gas source 1 through valve 1 and gas line 102 to the upper portion 114A of the plenum 114, and simultaneously process gas 168 flows from gas source 2 through valve 2 and gas line 106 to the upper portion 114A. For example, process gas 166 is transported via gas line 102, and process gas 168 is transported via gas line 106 simultaneously, such as during the same period.

[0053] As another example, the controller 204 sends a closed control signal to driver DRVR1 and an open control signal to driver DRVR2 to enable pulsed or staggered flow of process gases 166 and 168. Upon receiving the closed control signal, driver DRVR1 generates a closed current signal and sends the closed current signal to valve 1 to close valve 1. When valve 1 is closed, gas 166 does not flow from the gas source 1 through valve 1 and gas line 102 to the upper portion 114A of the plenum 114. For example, process gas 166 is transported intermittently through gas line 102, and process gas 168 is transported intermittently through gas line 106. Further example, process gas 166 is transported through gas line 102 for a different period than the period during which process gas 168 is transported through gas line 106. As yet another example, process gas 166 is not transported through gas line 102 during the period when process gas 168 is transported through gas line 106.

[0054] As yet another example, controller 204 sends an open control signal to driver DRVR1 and a closed control signal to driver DRVR2 to enable pulsed or staggered flow of process gases 166 and 168. Upon receiving the closed control signal, driver DRVR2 generates a closed current signal and sends the closed current signal to valve 2 to close valve 2. When valve 2 is closed, gas 168 does not flow from gas source 2 through valve 2 and gas line 106 to the upper portion 114A of plenum 114. For example, during the period when process gas 166 is being transported through gas line 102, process gas 168 is not being transported through gas line 106. As yet another example, controller 204 sends a closed control signal to driver DRVR1 and a closed control signal to driver DRVR2 to close valves 1 and 2.

[0055] During the period in which process gas 166 is supplied from gas source 1 to the upper portion 114A of the plenum 114 via valve 1 and gas line 102, temperature sensor 216 measures the temperature of the process gas 166 and generates a measurement signal S1, which is transmitted to controller 204. Upon receiving the measurement signal S1, controller 204 identifies the temperature of the process gas 166 from the measurement signal S1 and determines whether the temperature is within a first predetermined temperature range stored in the controller 204's memory. For example, the first predetermined range is 26°C to 27°C, for instance, 26.5°C to 27°C. In response to determining that the temperature is within the first predetermined temperature range, controller 204 does not control valve 1 via driver DRVR1 to turn off the supply of process gas 166. For example, controller 204 does not send a close control signal to valve 1 to close valve 1, and valve 1 remains open. On the other hand, if the controller 204 determines that the temperature of the process gas 166 is not within a first predetermined temperature range, for example, outside the first predetermined temperature range, the controller 204 controls valve 1 via driver DRVR1 to turn off the supply of process gas 166 to the upper section 114A. For example, the controller 204 sends a close control signal to valve 1 to close valve 1. Closing valve 1 prevents the plasma reactor 202 from being damaged by the temperature of the process gas 166.

[0056] Similarly, while the process gas 168 is supplied from the gas source 2 to the upper portion 114A of the plenum 114 via the valve 2 and gas line 106, the temperature sensor 218 measures the temperature of the process gas 168 and generates a measurement signal S2, which it transmits to the controller 204. Upon receiving the measurement signal S2, the controller 204 identifies the temperature of the process gas 168 from the measurement signal S2 and determines whether the temperature is within a second predetermined temperature range.

[0057] A second predetermined temperature range is stored in the memory of the controller 204. For example, the second predetermined temperature range is the same as, for example, equal to, the first predetermined temperature range. For example, the second predetermined temperature range has the same upper limit and the same lower limit as the first predetermined temperature range. For example, the second predetermined range is in the range of 26°C to 27°C. For another example, the second predetermined temperature range is different from the first predetermined temperature range. For example, the second predetermined temperature range has a different upper limit or a different lower limit than the first predetermined temperature range, or has different upper and lower limits. For example, the second predetermined range is in the range of 26.4°C to 26.8°C.

[0058] In response to determining that the temperature is within a second predetermined temperature range, the controller 204 does not control valve 2 via driver DRVR2 to turn off the supply of process gas 168. For example, the controller 204 does not send a close control signal to valve 2 to close valve 2, and valve 2 remains open. On the other hand, if the controller 204 determines that the temperature of the process gas 168 is not within the second predetermined temperature range, for example, outside the second predetermined temperature range, the controller 204 controls valve 2 via driver DRVR2 to turn off the supply of process gas 168 to the upper section 114A. For example, the controller 204 sends a close control signal to valve 2 to close valve 2. Closing valve 2 prevents the plasma reactor 202 from being damaged by the temperature of the process gas 168.

[0059] Note that when process gases 166 and 168 are mixed under atmospheric pressure, a large amount of heat is released, and a temperature sensor (not shown), such as temperature sensor 216 or 218, measures the temperature of the heat and generates a measurement signal. Upon receiving a measurement signal from the temperature sensor (not shown), the controller 204 compares the temperature of the heat with a first predetermined range, a second predetermined range, or both the first and second predetermined ranges. Based on this comparison, the controller 204 determines that the temperature of the heat output from the exothermic reaction is outside the first and second predetermined ranges. For example, the temperature of the heat output is higher than the temperatures of process gas 166 flowing through gas line 102 and process gas 168 flowing through gas line 106. For example, the temperature of the heat output is at least 9°C, e.g., 10°C or 11°C higher than the temperatures of process gas 166 flowing through gas line 102 and process gas 168 flowing through gas line 106.

[0060] Furthermore, after a vacuum is created in the plenum 114, internal volume 158, intermediate volume 240, and bottom volume 246, the controller 204 controls the switch system 224 to connect the DC power supply 222 to the heater system 244. Once the switch system 224 connects the DC power supply 222 to the heater system 244, DC power is supplied from the DC power supply 222 to the heater system 244.

[0061] While the plenum 114, internal volume 158, intermediate volume 240, and bottom volume 246 are under vacuum, one or more of the process gases 166 and 168 flow from the upper portion 114A to the bottom portion 114B of the plenum 114 and enter the internal volume 158 of the plasma chamber 110 through the opening 162 of the diffuser 108. Also, while the plenum 114, internal volume 158, intermediate volume 240, and bottom volume 246 are under vacuum, one or more of the process gases 166 and 168 flow from the internal volume 158 to the intermediate volume 240 through the through-hole of the outlet 236. Furthermore, while the plenum 114, internal volume 158, intermediate volume 240, and bottom volume 246 are under vacuum, one or more of the process gases 166 and 168 flow from the intermediate volume 240 to the bottom volume 246 to process the substrate S.

[0062] After the substrate S is processed, the controller 204 sends an open control signal to the valve 228 to open the valve 228. When the valve 228 is open, the residue from processing the substrate S is removed from the plasma reactor 202 by exiting the bottom volume 246 through the opening 252 and the valve 228 to the vacuum pump 226. Examples of materials in the residue from processing the substrate S include one or more of the process gases 166 and 168, one or more materials etched from the substrate S, and combinations of one or more of the process gases 166 and 168 and one or more materials etched from the substrate S. For example, one or more materials etched from the substrate S include materials such as silicon germanium (SiGe) or silicon nitride (Si3N4) from the stack layer of the substrate S.

[0063] During the period when valve 228 is open and processing residue from substrate S is being removed, temperature sensor 220 measures the temperature of the residue and generates a measurement signal S3, which is then transmitted to controller 204. In response to receiving the measurement signal S3, controller 204 identifies the temperature of the residue from the measurement signal S3 and determines whether the temperature of the residue is within a third predetermined range.

[0064] A third predetermined range is stored in the memory of the controller 204. For example, the third predetermined range is equal to the first predetermined range, the second predetermined range, or both the first and second predetermined ranges. For example, the third predetermined range has an upper limit equal to the upper limit of the first predetermined range and the upper limit of the second predetermined range. Furthermore, in this example, the lower limit of the third predetermined range is equal to the lower limit of the first predetermined range and the lower limit of the second predetermined range, so that the third predetermined range has the same lower limit as the first and second predetermined ranges. Further example, the third predetermined range is the range of 26°C to 27°C. As another example, the third predetermined range is different from the first and second predetermined ranges. For example, the third predetermined range has an upper limit greater than the upper limit of the first predetermined range and the upper limit of the second predetermined range, or a lower limit smaller than the lower limit of the first predetermined range and the lower limit of the second predetermined range, or a combination thereof. To give a further example, the third specified range is the range of 26.3°C to 26.9°C.

[0065] If the controller 204 determines that the residue temperature is within a third predetermined temperature range, it does not control the valve 228 to close. For example, the controller 204 does not send a close control signal to the valve 228 to close it. On the other hand, if the controller 204 determines that the residue temperature is not within the third predetermined temperature range, for example, outside the third predetermined temperature range, it controls the valve 228 to close. Closing the valve 228 prevents damage to the vacuum pump 226.

[0066] It should be noted that the heat treatment of the substrate S is performed when the RF generators 206 and 210 are not operating. For example, if the DC power supply 222 does not supply RF power to the RF coil 228, does not supply RF power to the substrate support 242, but supplies DC power to the heater system 244 to process the substrate S, the substrate S will be heat-treated. No plasma is generated in the bottom volume 246 during the heat treatment.

[0067] In one embodiment, the gas box 214 includes any number of gas sources and the same number of valves. For example, the gas box 214 includes n gas sources and n valves, where n is a positive integer.

[0068] In one embodiment, the RF coil 228 has three or more turns, such as three or four that surround portions 150 and 152 of the wall of the plasma chamber 110.

[0069] In one embodiment, the substrate support 242 includes a plurality of heater elements, each heater element being coupled to its own DC power supply via its own switch system. The switch system is coupled to a controller 204.

[0070] In one embodiment, the temperature sensor 216 is coupled to the connection between the gas source 1 and the valve 1, and the temperature sensor 218 is coupled to the connection between the gas source 2 and the valve 2.

[0071] In one embodiment, a temperature sensor 216 is connected to a clamp 136 to measure the temperature of process gas 166 flowing from the gas line 102 through a hole 140 to the upper section 114A, and a temperature sensor 218 is connected to a clamp 148 to measure the temperature of process gas 168 flowing from the gas line 106 through a hole 142 to the upper section 114A.

[0072] Figure 3 shows one embodiment of graph 300 for showing first and second predetermined ranges. Graph 300 plots the temperatures of process gases 166 and 168 (Figure 1) on the Y-axis and time on the X-axis. An example of the first predetermined range is the range between 26°C and 27°C, and an example of the second predetermined range is set between 26°C and 27°C. For example, the first predetermined range is 26.5°C to 26.95°C, and the second predetermined range is 26.4°C to 26.8°C. By supplying process gas 166 via gas line 102 (Figure 1) and process gas 160 via gas line 106 (Figure 1), the temperature of process gas 166 is controlled within the first predetermined range, and the temperature of process gas 168 is controlled within the second predetermined range.

[0073] Figure 4 is a diagram of one embodiment of system 400 to show that the temperature of process gas 166 is maintained within a first predetermined range as the flow of process gas 166 from gas source 1 (Figure 2) to the upper portion 114A (Figure 1) of the plenum 114 increases, and the temperature of process gas 166 is maintained within a second predetermined range as the flow of process gas 168 from gas source 2 (Figure 2) to the upper portion 114A (Figure 1) of the plenum 114 increases. System 400 includes gas sources 1 and 2, drivers DRVR1 and DRVR2, valves 1 and 2, mass flow controller MFC1 and another mass flow controller MFC2, temperature sensors 216 and 218, controller 204, valve 228, temperature sensor 220, and pressure sensor 402. As an example, the mass flow controller includes a flow meter. Mass flow controllers MFC1 and MFC2 are coupled to controller 204. Furthermore, the pressure sensor 402 is coupled to the controller 204 and the connector 201.

[0074] During the period when valve 1 is open and process gas 166 is supplied to the upper portion 114A (Figure 1) of the plenum 114 via gas line 102, the mass flow controller MFC1 measures a first flow rate of process gas 166 in gas line 102 during the first period, generates a measurement signal MS1A, and transmits the measurement signal MS1A to the controller 204. The controller 204 identifies the first flow rate of process gas 166 from the measurement signal MS1A. In addition, the temperature sensor 216 measures a first temperature of process gas 166 in gas line 102 during the first period, generates a measurement signal S1A, and transmits the measurement signal S1A to the controller 204.

[0075] Furthermore, during the second period, the mass flow controller MFC1 measures the second flow rate of the process gas 166 in the gas line 102 and generates a measurement signal MS1B, which is then transmitted to the controller 204. For example, the second period occurs after the first period. Also, for example, the second flow rate of the process gas 166 is greater than the first flow rate of the process gas 166 and progressively increases compared to the first flow rate. For example, the second flow rate is 800 standard cubic centimeters per minute (sccm) and the first flow rate is 400 sccm. Another example is the second flow rate being 1200 sccm and the first flow rate being 800 sccm. Yet another example is the second flow rate being 2000 sccm and the first flow rate being 1200 sccm. Another example is the second flow rate being less than the first flow rate and progressively decreasing compared to the first flow rate. The controller 204 determines the second flow rate of the process gas 166 from the measurement signal MS1B. The temperature sensor 216 also measures the second temperature of the process gas 166 in the gas line 102 during the second period, generates a measurement signal S1B, and transmits the measurement signal S1B to the controller 204. For example, the first temperature is equal to the second temperature. Alternatively, the first temperature is different from the second temperature.

[0076] The controller 204 receives measurement signals MS1A and S1A during a first period and measurement signals MS1B and S1B during a second period, identifies first and second flow rates of the process gas 166, identifies first and second temperatures of the process gas 166, and determines whether the first and second temperatures are within a first predetermined range as there is a gradual increase or decrease from the first flow rate to the second flow rate. If the controller 204 determines that the first and second temperatures are within a first predetermined range, it does not control valve 1 to close in order to stop the flow of process gas 166 to the upper section 114A (Figure 1). On the other hand, if the controller 204 determines that the first temperature is outside the first predetermined range, or the second temperature is outside the first predetermined range, or both the first and second temperatures are outside the first predetermined range, it controls valve 1 to close in order to prevent the flow of process gas 166 to the upper section 114A. In this way, the controller 204 receives further flow rate data from the mass flow controller MFC1 and further temperature data from the temperature sensor 216, and determines whether to control the valve 1.

[0077] Similarly, during the period when valve 2 is open and process gas 168 is supplied to the upper portion 114A of the plenum 114 via gas line 106, the mass flow controller MFC2 measures the primary flow rate of process gas 168 in gas line 106 during the primary period, generates a measurement signal MS2A, and transmits the measurement signal MS2A to the controller 204. For example, the primary period occurs simultaneously with the first period. For another example, the primary period occurs before the first period, for example immediately before, or after, for example, immediately following or immediately following the first period. The controller 204 identifies the primary flow rate of process gas 168 from the measurement signal MS2A. Also, the temperature sensor 216 measures the primary temperature of process gas 168 in gas line 106 during the primary period, generates a measurement signal S2A, and transmits the measurement signal S2A to the controller 204.

[0078] Furthermore, during the secondary period, the mass flow controller MFC2 measures the secondary flow rate of the process gas 168 in the gas line 106, generates a measurement signal MS2B, and transmits the measurement signal MS2B to the controller 204. For example, the secondary period occurs after the primary period. Also, for example, the secondary flow rate of the process gas 168 is greater than the primary flow rate of the process gas 168 and is a progressively increasing flow rate compared to the primary flow rate. For example, the secondary flow rate is 200 sccm and the primary flow rate is 100 sccm. Another example is the secondary flow rate being 300 sccm and the primary flow rate being 200 sccm. Yet another example is the secondary flow rate being 500 sccm and the primary flow rate being 300 sccm. Another example is the secondary flow rate being less than the primary flow rate and is a progressively decreasing flow rate compared to the primary flow rate. For example, the secondary period occurs simultaneously with the second period. As another example, a secondary period may occur before, for example immediately before, or after, for example, immediately following or following the second period.

[0079] The controller 204 determines the secondary flow rate of the process gas 168 from the measurement signal MS2B. The temperature sensor 216 also measures the secondary temperature of the process gas 168 in the gas line 106 during the secondary period, generates a measurement signal S2B, and transmits the measurement signal S2B to the controller 204. For example, the primary temperature is equal to the secondary temperature. Alternatively, the primary temperature may be different from the secondary temperature.

[0080] The controller 204 receives measurement signals MS2A and S2A during the primary period and measurement signals MS2B and S2B during the secondary period, identifies the primary and secondary flow rates of the process gas 168, identifies the primary and secondary temperatures of the process gas 168, and determines whether the primary and secondary temperatures are within a second predetermined range as the flow rate gradually increases or decreases from the primary to the secondary. If the controller 204 determines that the primary and secondary temperatures are within the second predetermined range, it does not control valve 2 to close in order to stop the flow of process gas 168 to the upper section 114A (Figure 1). On the other hand, if the controller 204 determines that the primary temperature is outside the second predetermined range, or the secondary temperature is outside the second predetermined range, or both the primary and secondary temperatures are outside the second predetermined range, it controls valve 2 to close in order to prevent the flow of process gas 168 to the upper section 114A. In this way, the controller 204 receives further flow rate data from the mass flow controller MFC2 and further temperature data from the temperature sensor 218, and determines whether to control the valve 2.

[0081] Furthermore, during the period when valve 228 is open and heat treatment residue is transferred from plasma reactor 202 (Figure 2) to vacuum pump 226, pressure sensor 402 measures a first pressure amount of the residue flow to vacuum pump 226 (Figure 2) via opening 252 and connector 201 during a first time interval to generate a measurement signal MS3A, which is transmitted to controller 204.

[0082] The controller 204 identifies the initial flow rate of the residue from the measurement signal MS3A. For example, the controller 204 identifies a first pressure from the measurement signal MS3A. Furthermore, in this example, the controller 24 determines that the first pressure corresponds to the initial flow rate based on the correspondence between the pressure of the residue flow and the flow rate stored in the controller 204's memory, for example, a one-to-one relationship. For example, the controller 204 determines that the first pressure has a one-to-one relationship with the initial flow rate. In addition, the temperature sensor 252 measures the initial temperature of the residue flowing to the vacuum pump 226 through the opening 252 and connector 201 during the first time interval, generates a measurement signal S3A, and transmits the measurement signal S3A to the controller 204.

[0083] Furthermore, during the second time interval, the pressure sensor 402 measures the second pressure of the residue flow to the vacuum pump 226 via the opening 252 and connector 201 to generate a measurement signal MS3B, which is transmitted to the controller 204. For example, the second time interval occurs after the first time interval. Also, for example, the second pressure of the residue flow is greater than the first pressure of the residue flow. For another example, the second pressure of the flow is less than the first pressure of the flow.

[0084] The controller 204 identifies the final flow rate of the residue from the measurement signal MS3B. For example, the controller 204 identifies a second pressure from the measurement signal MS3B. Furthermore, in this example, the controller 204 determines that the second pressure corresponds to the final flow rate based on the correspondence between the pressure of the residue flow and the flow rate stored in the controller 204's memory, for example, a one-to-one relationship. For example, the controller 204 determines that the second pressure has a one-to-one relationship with the final flow rate. In addition, the temperature sensor 252 measures the final temperature of the residue flowing through the opening 252 during the second time interval, generates a measurement signal S3B, and transmits the measurement signal S3B to the controller 204.

[0085] The controller 204 receives measurement signals MS3A and S3A during a first time interval, and measurement signals MS3B and S3B during a second time interval, determines the initial and final flow rates of the residue flow, identifies the initial and final temperatures of the residue, and determines whether the initial and final temperatures are within a third predetermined range as the flow rate increases from the initial to the final flow rate. If the controller 204 determines that the initial and final temperatures are within the third predetermined range, it does not control the valve 228 to close in order to stop the flow of residue to the vacuum pump 226. On the other hand, if the controller 204 determines that the initial temperature, the final temperature, or a combination thereof is outside the third predetermined range, it controls the valve 228 to close in order to prevent the flow of residue to the vacuum pump 226.

[0086] In one embodiment, a temperature sensor (not shown), such as a temperature sensor 220, is coupled to a vacuum pump 226. The temperature sensor (not shown) is coupled to a controller 204 and generates a temperature measurement signal in the vacuum pump 226 as the flow rates of process gases 166 and 168 change progressively, such as by progressively increasing or decreasing. The temperature sensor (not shown) transmits the measurement signal to the controller 204. Upon receiving the measurement signal, the controller 204 determines whether the temperature is within a fourth predetermined range greater than first, second, and third predetermined ranges. An example of the fourth predetermined range is 74°C to 79°C. If the controller 204 determines that the temperature is within the fourth predetermined range, it does not control the vacuum pump 226 to turn off via a switch such as a driver. The controller 204 is connected to the vacuum pump 226 via a switch. On the other hand, if the controller 204 determines that the temperature is outside the fourth predetermined range, it controls the vacuum pump 226 to turn off via a switch to protect the vacuum pump 226.

[0087] Figure 5A shows an embodiment of the substrate 500 before it is heat-treated using the plasma system 200 (Figure 2). The substrate 500 is an example of the substrate S before heat treatment. The substrate 500 includes several stacked layers, such as a silicon (Si) layer 502, a silicon-germanium layer 504, and another silicon layer 506. Each layer 502, 504, and 506 is an example of a stacked layer. The silicon-germanium layer 504 is stacked or sandwiched between two silicon layers 502 and 506. For example, the silicon-germanium layer 504 is located above the silicon layer 502, and the silicon layer 506 is located above the silicon-germanium layer 504. The silicon-germanium layer 504 has an upper portion 504A, a middle portion 504B, and a bottom portion 504C. The upper portion 504A is bonded adjacent to the silicon layer 506, and the lower portion 504C is bonded to the silicon layer 502. The intermediate portion 504B may be referred to as the first portion in this specification, and the combination of the upper portion 504A and the lower portion 504C may be referred to as the second portion in this specification. For example, the first portion has a higher concentration of germanium (Ge) compared to silicon (Si), which is referred to as the bulk silicon-germanium layer in this specification, and the second portion has a higher concentration of silicon compared to germanium, which is referred to as the interfacial silicon-germanium layer in this specification. To illustrate, the first portion has a higher proportion of germanium compared to silicon, and the second portion has a higher proportion of silicon compared to germanium.

[0088] Figure 5B is a diagram of one embodiment of a substrate 520 to show etching of substrate 500 (Figure 5A) by using a process gas 166 (Figure 1), such as a fluorine-containing gas. Substrate 520 is an example of substrate S after processing with process gas 166. Substrate 520 includes silicon layers 502 and 506, with a silicon germanium layer 522 between the silicon layers 502 and 506. For example, the silicon germanium layer 522 is located above the silicon layer 502, and the silicon layer 506 is located above the silicon germanium layer 522.

[0089] The silicon germanium layer 522 has an upper portion 522A, an intermediate portion 522B, and a bottom portion 522C. The upper portion 522A is bonded to the silicon layer 506, for example, by being adjacent to it, and the bottom portion 522C is bonded to the silicon layer 502. The intermediate portion 522B may be referred to herein as the first portion after treatment with process gas 166, and the combination of the upper portion 522A and the bottom portion 522C may be referred to herein as the second portion after treatment with process gas 166.

[0090] Because the upper portion 522A and the lower portion 522C have a higher silicon concentration compared to germanium, when the process gas 166 is applied to the substrate 520, the upper portion 522A and the lower portion 522C are etched with less than the middle portion 522B. The process gas 166 etches the middle portion 522B with the maximum amount compared to the upper portion 522A and the lower portion 522C in order to form recesses on the sides of the silicon germanium layer 522.

[0091] Figure 5C is a diagram of one embodiment of a substrate 530 to show etching of a substrate 520 (Figure 5B) by using a gas mixture 170 (Figure 1) of process gases 166 and 168 (Figure 1). Substrate 530 is an example of a substrate S after treatment with the gas mixture 170. The substrate 530 includes silicon layers 502 and 506, with a silicon-germanium layer 532 located between the silicon layers 502 and 506. For example, the silicon-germanium layer 532 is located above the silicon layer 502, and the silicon layer 506 is located above the silicon-germanium layer 532.

[0092] The silicon germanium layer 532 has an upper portion 532A, an intermediate portion 532B, and a bottom portion 532C. The upper portion 532A is bonded to the silicon layer 506, for example, adjacent to it, and the bottom portion 532C is bonded to the silicon layer 502. The intermediate portion 532B may be referred to herein as the first portion after treatment with the gas mixture 170, and the combination of the upper portion 532A and the bottom portion 532C may be referred to herein as the second portion after treatment with the gas mixture 170.

[0093] The upper portion 532A and the bottom portion 532C have a higher concentration of silicon compared to germanium, and the middle portion 532B has a higher concentration of germanium compared to silicon. Therefore, when the gas mixture 170 is applied to the substrate 530, all portions 532A to 532C are etched by equal or substantially equal amounts. The application of the gas mixture 170 is reduced by removing recesses, etc.

[0094] Figure 6 is a flowchart of one embodiment of Method 600 for showing the processing of a substrate S (Figure 1) by applying process gas 166 and a gas mixture 170 of process gases 166 and 168 (Figure 1). Method 600 is performed using a plasma system 200 (Figure 2).

[0095] Method 600 includes operation 602 in which the substrate S is placed in the bottom volume 246 (Figure 2) of the plasma reactor 202. After a vacuum is generated in the plenum 114 and volumes 158, 240, 246 (Figure 2) of the plasma reactor 202, the method includes operation 604 (Figure 5A) in which process gas 166 (Figure 1) is supplied to selectively etch a first portion of the substrate 500. For example, the controller 204 controls valve 1 to open and valve 2 to close in order to supply process gas 166 without supplying process gas 168 to the upper portion 114A (Figure 1) of the plenum 114. Method 600 further includes operation 606 in which process gases 166 and 168 are supplied to the upper portion 114A of the plenum 114. As an example, the controller 204 controls valves 1 and 2 to open in order to supply process gases 166 and 168 to the upper portion 114A of the plenum 114 simultaneously. For example, during the same period that process gas 168 is transferred from gas line 106 to the upper portion 114A through opening 105 and hole 142, process gas 166 is transferred from gas line 102 to the upper portion 114A through opening 103 and hole 140. Process gases 166 and 168 are supplied simultaneously to selectively etch the second portion of the substrate 520 (Figure 5B).

[0096] In one embodiment, operations 604 and 606 are performed multiple times. For example, operation 604 is repeated after operation 606, and after operation 604 is repeated, operation 606 is repeated.

[0097] The embodiments described herein can be implemented in a variety of computer system configurations, including handheld hardware units, microprocessor systems, microprocessor-based or programmable consumer electronics, minicomputers, and mainframe computers. The embodiments can also be implemented in a distributed computing environment where tasks are performed by remote processing hardware units linked over a network.

[0098] In some embodiments, the controllers described herein are part of a system that may be part of the examples described above. Such systems include semiconductor processing equipment comprising one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (such as wafer pedestals, gas flow systems, etc.). These systems are integrated with electronic equipment for controlling pre-processing, in-processing, and post-processing operations of semiconductor wafers or substrates. The electronic equipment is referred to as a “controller” that can control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller is programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, RF generator settings, RF matcher settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, tools and other transfer tools, and / or loading and unloading of wafers into or bonded to a load lock.

[0099] Generally, in various embodiments, a controller is defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurement, etc. Integrated circuits include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), ASICs, PLDs, and / or one or more microprocessors, or microcontrollers (e.g., software) that execute program instructions. Program instructions are instructions that are transmitted to the controller in the form of various individual settings (or program files) that define parameters, coefficients, variables, etc., for performing a particular process on a semiconductor wafer or system. In some embodiments, program instructions are part of a recipe defined by a process engineer to achieve one or more processing steps during the processing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0100] In some embodiments, the controller is part of or coupled to a computer that is integrated with the system, coupled to the system, or otherwise networked to the system, or a combination thereof. For example, the controller resides in all or part of a “cloud” or fab host computer, which enables remote access to wafer processing. The computer enables remote access to the system to monitor the current progress of a processing operation, to investigate the history of past processing operations, to investigate trends or performance metrics from multiple processing operations, to change the parameters of the current process, to set processing steps to follow the current process, or to start a new process.

[0101] In some embodiments, a remote computer (e.g., a server) provides process recipes to the system via a network including a local network or the Internet. The remote computer includes a user interface that allows input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters, coefficients, and / or variables for each of the processing steps performed during one or more operations. It should be understood that the parameters, coefficients, and / or variables are specific to the type of process being performed and the type of tool to which the controller is configured to join or control. Thus, as described above, the controllers are distributed, for example, by including one or more separate controllers that are networked together and operate toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes includes one or more integrated circuits on a chamber that communicate with one or more remotely located integrated circuits (such as at the platform level or as part of a remote computer) that are combined to control a process on the chamber.

[0102] Exemplary systems to which the method is applied in various embodiments include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems associated with or used in the processing and / or manufacture of semiconductor wafers.

[0103] It should be further noted that in some embodiments, the above-described operation applies to several types of plasma chambers, such as plasma chambers including inductively coupled plasma (ICP) reactors, capacitively coupled plasma (CCP) chambers, transformer-coupled plasma chambers, conductive tools, dielectric tools, and plasma chambers including electron cyclotron resonance (ECR) reactors. For example, one or more RF generators are coupled to inductors within an ICP reactor. Examples of inductor shapes include solenoids, dome coils, and flat-plate coils.

[0104] As described above, depending on one or more process steps performed by the tool, the host computer communicates with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, the main computer, another controller, or tools used for material transport that carry wafer containers to and from tool locations and / or load ports in the semiconductor manufacturing plant.

[0105] With the above embodiments in mind, it should be understood that some embodiments utilize various computer implementation operations, including data stored in a computer system. These operations involve physically manipulating physical quantities. Any of the operations described herein that form part of the embodiments are useful mechanical operations.

[0106] Some embodiments also relate to hardware units or devices for performing these operations. These devices are specifically configured for dedicated computers. Where defined as a dedicated computer, the computer performs other processes, program executions, or routines that are not part of the special purpose, but can still operate for a special purpose.

[0107] In some embodiments, the operation may be processed by a computer selectively launched or configured by one or more computer programs stored in computer memory, a cache, or retrieved via a computer network. Once the data is retrieved via a computer network, the data may be processed by other computers on the computer network, such as a cloud of computing resources.

[0108] One or more embodiments may also be created as computer-readable code on a non-temporary computer-readable medium. A non-temporary computer-readable medium is any data storage hardware unit that stores data to be subsequently read by a computer system, such as a memory device. Examples of non-temporary computer-readable media include hard drives, network-attached storage (NAS), read-only memory (ROM), random-access memory (RAM), compact disk ROM (CD-ROM), CD-recordable (CD-R), CD-rewritable (CD-RW), magnetic tape, and other optical and non-optical data storage hardware units. In some embodiments, the non-temporary computer-readable medium includes computer-readable tangible media distributed on a network-connected computer system so that the computer-readable code is stored and executed in a distributed manner.

[0109] Although the method operations described above were presented in a specific order, it should be understood that in various embodiments, other management operations may be performed between operations, or the method operations may be coordinated to occur at slightly different times, or they may be distributed across a system that allows the method operations to occur at various intervals, or they may be performed in a different order than described above.

[0110] It should be further noted that in one embodiment, one or more features from any of the embodiments described above may be combined with one or more features from any other embodiments without departing from the scope described in the various embodiments described herein.

[0111] While the embodiments described above have been explained in some detail to clarify understanding, it will be clear that certain changes and modifications can be made within the scope of the appended claims. Therefore, these embodiments should be considered illustrative and not limiting, and embodiments should not be limited to the details given herein. [Explanation of symbols]

[0112] 24 Controller, 100 System, 101 Main body, 102 Opening, 102 Gas line, 103 Opening, 104 Controller, 104 Gas adapter, 105 Opening, 106 Gas line, 107 Main body section, 108 Diffuser, 109 Main body section, 109 Main body, 110 Plasma chamber, 112 Left flange section, 112 Flange section, 113 Right flange section, 114 Plenum, 114A Upper section, 114A Section, 114B Bottom section, 116 Wall, 116 Upper wall, 118 Gas adapter, 118 Right wall, 120 Bottom wall, 122 Wall, 122 Left wall, 124 Section, 126 Section, 128 Section, 130 Section, 132 Right flange section, 132 Flange section, 134 Left flange section, 136 clamp, 138 O-ring, 140 hole, 142 hole, 144 connecting gas line, 146 O-ring, 148 clamp, 150 section, 150 left side section, 152 right side section, 154 clamp, 156 clamp, 158 internal volume, 160 process gas, 160 bottom wall, 162 opening, 166 process gas, 166 gas, 168 gas, 168 process gas, 170 gas mixture, 200 system, 200 plasma system, 201 connector, 202 plasma reactor, 202 connector, 204 controller, 206 RF generator, 206 source RF generator, 206 generator, 208 matching unit, 210 bias RF generator, 210 generator, 212 matching unit, 214 gas box, 216 Temperature sensor, 218 Temperature sensor, 220 Temperature sensor, 222 DC power supply, 222 Power supply, 224 Switch system, 226 Vacuum pump, 227 Driver, 228 Valve, 228 RF coil, 230 Top section, 232 Middle section, 234 Bottom section, 236 Outlet, 238 Shower head, 240 Middle volume, 242 Substrate support, 244 Heater system, 246 Bottom volume, 248 Bottom wall, 250 Side wall, 252 Temperature sensor, 252 Hole, 252 Opening, 300 Graph, 400 System, 402 Pressure sensor, 500 Substrate, 502 Layer, 502 Silicon layer, 504 Layer, 504 Silicon germanium layer, 504A Top section, 504B Middle section, 504C Bottom section, 506 Layer, 506 Silicon layer, 520Substrate, 522 silicon germanium layer, 522A upper part, 522B middle part, 522C bottom part, 530 substrate, 532 silicon germanium layer, 532A upper part, 532A part, 532B middle part, 532C bottom part,

Claims

1. A system for supplying multiple gases to a plasma chamber, A gas adapter having a main body, a first hole formed inside the main body, a second hole formed inside the main body, and a plenum, A first gas line connected to the gas adapter at the opening of the first hole, the first gas line configured to transfer a first process gas to the plenum through the first hole, A second gas line connected to the gas adapter via the opening of the second hole, the second gas line is configured to transfer a second process gas to the plenum via the second hole, the first process gas being transferred via the first gas line and the second process gas being transferred via the second gas line, while maintaining the first temperature of the first process gas within a first predetermined range and the second temperature of the second process gas within a second predetermined range, wherein the first and second temperatures are lower than a third temperature achieved by mixing the first and second process gases at atmospheric pressure. Equipped with, The gas adapter is configured to mix the first process gas with the second process gas under vacuum to produce a gas mixture, and to supply the gas mixture to the internal volume of the plasma chamber. system.

2. The system according to claim 1, wherein the first gas line is configured to transport the first process gas at a progressively increasing flow rate while maintaining the first temperature within a first predetermined range, and the second gas line is configured to transport the second process gas at a progressively increasing flow rate while maintaining the second temperature within a second predetermined range.

3. The system according to claim 1, wherein the first predetermined range is equal to the second predetermined range.

4. The system according to claim 1, wherein the gas adapter is coupled to a vacuum pump via the plasma chamber of a plasma reactor, the plasma reactor is configured to output a residue of the gas mixture, and the plasma reactor is configured to transfer the residue to the vacuum pump while maintaining a fourth temperature of the residue within a third predetermined range.

5. The system according to claim 4, wherein the third predetermined range is equal to the first predetermined range or the second predetermined range.

6. The system according to claim 1, wherein the first gas line is coupled to the gas adapter via a fitting and a clamp, the first hole is oriented horizontally with respect to the plenum and joins with the plenum and the first gas line, the first hole is located between the first gas line and the plenum, and the first hole is configured to transfer the first process gas received from the first gas line to the plenum.

7. The system according to claim 6, wherein the second gas line is coupled to the gas adapter via a fitting and a clamp, the second hole is oriented horizontally with respect to the plenum, joins with the plenum and is coupled to the second gas line, the second hole is located between the second gas line and the plenum, and the second hole is configured to transfer the second process gas received from the second gas line to the plenum.

8. The system according to claim 1, wherein the first process gas reacts with the second process gas at atmospheric pressure to produce an exothermic reaction, the first process gas is fluorine, and the second process gas is a hydrogen-based gas.

9. The system according to claim 8, wherein the hydrogen-based gas is hydrogen gas, methane gas, or a gas containing hydrogen.

10. The system according to claim 1, wherein the plenum has a vacuum during the receiving of the first and second process gases and during the transfer of the first and second process gases.

11. The system according to claim 1, wherein the third temperature is outside the first predetermined range and the second predetermined range.

12. The system according to claim 1, wherein the first temperature is measured in the first gas line and the second temperature is measured in the second gas line.

13. A method for supplying multiple gases to a plasma reactor for processing a substrate, A step of receiving a first process gas from a first gas line, wherein the first process gas is received by a gas adapter connected to the first gas line. The steps include transferring the first process gas from the gas adapter to the volume of the plasma reactor via a diffuser, A step of obtaining a first process gas from the first gas line and a second process gas from the second gas line, wherein the first process gas is obtained from the first gas line and the second process gas is obtained from the second gas line by the gas adapter coupled to the second gas line, and simultaneously maintaining the first temperature of the first process gas and the second temperature of the second process gas within a first predetermined range, wherein the first and second temperatures are lower than a third temperature achieved by mixing the first process gas with the second process gas at atmospheric pressure. The steps include: mixing the first and second process gases under vacuum in the gas adapter to produce a gas mixture; The steps include supplying the gas mixture from the gas adapter through the diffuser to the volume of the plasma reactor to process the substrate, Methods that include...

14. The steps include receiving the first process gas through the first gas line at a gradually increasing flow rate while maintaining the first temperature within a predetermined range, The steps include receiving the second process gas through the second gas line at a gradually increasing flow rate while maintaining the second temperature within the first predetermined range, The method according to claim 13, further comprising:

15. The gas adapter is coupled to the vacuum pump via the plasma reactor, and the method is The step of transferring the residue to the vacuum pump while maintaining the fourth temperature of the residue within a second predetermined range. The method according to claim 13, further comprising:

16. The method according to claim 13, wherein the substrate includes a silicon germanium layer bonded to a silicon layer.

17. The method according to claim 13, further comprising the step of receiving a DC signal generated by a direct current (DC) power supply for processing the substrate using a heater element of the plasma reactor.

18. The method according to claim 13, wherein the first process gas reacts with the second process gas under atmospheric pressure to produce an exothermic reaction, the first gas line is connected to the gas adapter via a fitting and a clamp, the first process gas is fluorine, and the second process gas is a hydrogen-based gas.

19. A plasma system for controlling the supply of multiple gases to a plasma chamber, Gas box and Gas adapter and A first gas line connected to the gas adapter and the gas box, the first gas line configured to transfer a first process gas, A second gas line connected to the gas adapter and the gas box, configured to transport a second process gas, wherein the first process gas is transported through the first gas line, the second process gas is transported through the second gas line, the first temperature of the first process gas and the second temperature of the second process gas are maintained within a predetermined range, and the first and second temperatures are lower than a third temperature achieved by mixing the first and second process gases at atmospheric pressure, The gas adapter is configured to mix the first process gas with the second process gas under vacuum to produce a gas mixture, and to supply the gas mixture to the internal volume of the plasma chamber. Plasma system.

20. The plasma system according to claim 19, wherein the first process gas reacts with the second process gas to produce an exothermic reaction under atmospheric pressure, the gas adapter is located above the internal volume, the first gas line is configured to transport the first process gas at a progressively increasing flow rate while maintaining the first temperature within a predetermined range, and the second gas line is configured to transport the second process gas at a progressively increasing flow rate while maintaining the second temperature within a predetermined range.

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