Sealed metal pedestal

Abstract

A pedestal for a substrate processing system comprises a base portion and a stem portion. The base portion includes a first metallic material. The stem portion is connected to the base portion. A second metallic material seals the base portion. The second metallic material is different from the first metallic material.

Description

Technical Field

[0001] Cross - reference to Related Applications This application claims the benefit of U.S. Provisional Application No. 63 / 458,411, filed Apr. 10, 2023. The entire disclosure of the above - referenced application is incorporated herein by reference.

[0002] This disclosure generally relates to substrate processing systems, and more particularly to a sealed metal pedestal used to support a substrate in a substrate processing system.

Background Art

[0003] The description of the background art provided herein is for the purpose of generally presenting the context of the present disclosure. As far as the aspects described in this background art section are concerned, the research of the inventors and aspects of the description that may not be recognized as prior art at the time of filing are not recognized as prior art to the present disclosure, either explicitly or implicitly.

[0004] A substrate processing system (referred to as a tool) is used to process substrates such as semiconductor wafers. The substrate is processed using various deposition and / or etching processes. For example, the process may include atomic layer deposition (ALD), atomic layer etching (ALE), chemical vapor deposition (CVD), etc. During processing, the substrate is placed on a substrate support (referred to as a pedestal) within the processing chamber. Various gases, gas mixtures, and / or vaporized precursors are introduced into the processing chamber using a showerhead, injector, etc. Plasma may be used to initiate a chemical reaction. The processing chamber may be periodically cleaned using various cleaning processes, and a cleaning gas may be introduced into the processing chamber and plasma may be ignited. br>

Summary of the Invention

Means for Solving the Problems

[0005] A pedestal for a substrate processing system comprises a base portion and a stem portion. The base portion includes a first metallic material. The stem portion is connected to the base portion. A second metallic material seals the base portion. The second metallic material is different from the first metallic material.

[0006] In addition, the first metallic material is selected from the group consisting of aluminum, stainless steel, and aluminum alloys. The second metallic material is nickel or a nickel alloy.

[0007] In addition, the first and second metallic materials are thermally compatible with each other. The second metallic material is more resistant than the first metallic material to the chemicals used to process substrates on the pedestal in the processing chamber of the substrate processing system. The second metallic material is more resistant than the first metallic material to the chemicals used to clean the processing chamber.

[0008] In addition, the second metal material on the top surface of the base is thicker than the bottom and sides of the base.

[0009] In addition, different regions of the base and stem are sealed with a second metallic material using different sealing methods.

[0010] In additional features, the stem portion includes a second metallic material.

[0011] In an additional feature, the stem portion comprises a first metal material, and the stem portion is sealed with a second metal material.

[0012] In additional features, the base comprises first, second, third, fourth, and fifth plates. The first plate comprises a first metallic material. The first plate comprises a first surface and a second surface. The second plate comprises a first metallic material. The second plate comprises a first surface and a second surface. The first surface of the second plate is joined to the second surface of the first plate. The sidewalls of the first and second plates are covered with a first layer of the second metallic material. The third plate comprises a second metallic material. The third plate comprises a first surface and a second surface. The fourth plate comprises a second metallic material. The fourth plate comprises a first surface and a second surface. The first surface of the fourth plate is joined to the second surface of the third plate. The second surface of the fourth plate is joined to the first surface of the first plate. The fifth plate comprises a second metallic material. The fifth plate comprises a first surface and a second surface. The first surface of the fifth plate is joined to the second surface of the second plate. The second surface of the fifth plate is joined to the stem portion.

[0013] In terms of additional features, the third plate is thicker than the fifth plate and thinner than the first plate. The first plate is thicker than the second plate. The fifth plate is thinner than the second plate.

[0014] In an additional feature, the stem portion comprises a first metal material and is covered with a second layer of a second metal material. The second layer is thinner than the third and fifth plates as well as the first layer.

[0015] In an additional feature, the third plate is provided with a set of grooves. The pedestal further comprises a stem, a fifth plate, a second plate, a first plate, and a fourth plate, through which conduits are connected to the set of grooves. The fourth plate seals the first plate from the set of grooves.

[0016] In additional features, the system includes a pedestal and further comprises a vacuum pump coupled to a conduit. The vacuum pump is configured to create a vacuum in a set of grooves to clamp the substrate to the first surface of a third plate.

[0017] In additional features, the system includes a pedestal. A third plate has a pair of holes around the periphery of the first surface of the third plate. The pair of holes is in fluid communication with a pair of grooves. The system further includes a gas supply source coupled to a conduit. The gas supply source is configured to supply gas through a pair of grooves and a pair of holes.

[0018] In additional features, the third plate comprises a first set of grooves, a second set of grooves, and a set of holes around the periphery of the first surface of the third plate. The set of holes is in fluid communication with the second set of grooves. The first set of grooves is separated from the second set of grooves and the set of holes.

[0019] In additional features, the pedestal further comprises a stem, a fifth plate, a second plate, a first plate, and a fourth plate, through which first and second conduits are positioned. The first conduits are coupled to a first pair of grooves. The second conduits are coupled to a second pair of grooves. The fourth plate seals the first plate from the first and second pairs of grooves and a pair of holes.

[0020] In additional features, the system includes a pedestal and further comprises a vacuum pump and a gas supply source. The vacuum pump is coupled to a first conduit. The vacuum pump is configured to create a vacuum in a first pair of grooves to clamp a substrate to a first surface of a third plate. The gas supply source is coupled to a second conduit. The gas supply source is configured to supply gas through a second pair of grooves and a pair of holes.

[0021] In an additional feature, the pedestal further comprises a heater positioned between the first plate and the second plate. The interface between the second plate and the fifth plate includes a gap configured to reduce heat transfer from the fifth plate to the region around the pedestal.

[0022] In an additional feature, the pedestal further comprises a heater positioned between a first plate and a second plate. The second surface of the second plate and the first surface of the fifth plate are provided with ridges and grooves. The heater is aligned with the ridges on the second surface of the second plate. The ridges on the first surface of the fifth plate are bonded to the grooves on the second surface of the second plate. The grooves on the first surface of the fifth plate are configured to provide a gap around the ridges on the second surface of the second plate. The gap is configured to reduce heat transfer from the fifth plate to the area around the pedestal.

[0023] In additional features, the base comprises first, second, third, and fourth plates. The first plate comprises a first metallic material. The first plate comprises a first surface and a second surface. The second plate comprises a first metallic material. The second plate comprises a first surface and a second surface. The first surface of the second plate is bonded to the second surface of the first plate. The sidewalls of the first and second plates are covered with a first layer of the second metallic material. The third plate comprises a second metallic material. The third plate comprises a first surface and a second surface. The first surface of the third plate comprises a projection for supporting the substrate. The second surface of the third plate is bonded to the first surface of the first plate. The fourth plate comprises a second metallic material. The fourth plate comprises a first surface and a second surface. The first surface of the fourth plate is bonded to the second surface of the second plate. The second surface of the fourth plate is joined to the stem.

[0024] In an additional feature, the third plate is thicker than the fourth plate and thinner than the first plate. The first plate is thicker than the second plate. The fourth plate is thinner than the second plate.

[0025] In an additional feature, the stem portion includes a first metal material and is covered with a second layer of a second metal material. The second layer is thinner than the third and fourth plates and the first layer.

[0026] In an additional feature, the third plate has a set of grooves. The pedestal further includes a conduit coupled to the set of grooves through the stem portion, the fourth plate, the second plate, and the first plate. The pedestal further includes a fifth plate that seals the first plate from the set of grooves.

[0027] In an additional feature, the system includes a pedestal. The third plate has a set of holes around the perimeter of the first surface of the third plate. The set of holes is in fluid communication with the set of grooves. The fifth plate seals the first plate from the set of holes. The system further includes a gas supply source coupled to the conduit. The gas supply source is configured to supply gas through the set of grooves and the set of holes.

[0028] In an additional feature, the pedestal further includes a heater disposed between the first plate and the second plate. The interface between the second plate and the fourth plate includes a gap configured to reduce heat transfer from the fourth plate to the region around the pedestal.

[0029] In an additional feature, the pedestal further includes a heater disposed between the first plate and the second plate. The second surface of the second plate and the first surface of the fourth plate include ridges and grooves. The heater is aligned with the ridges on the second surface of the second plate. The ridges on the first surface of the fourth plate are joined to the grooves on the second surface of the second plate. The grooves on the first surface of the fourth plate are configured to provide a gap around the ridges on the second surface of the second plate. The gap is configured to reduce heat transfer from the fourth plate to the region around the pedestal.

[0030] Further application areas of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and the specific examples are for the purpose of illustration only and do not limit the scope of the present disclosure.

[0031] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

Brief Description of the Drawings

[0032] [Figure 1] FIG. 1 is a diagram showing an example of a substrate processing system including a sealed pedestal according to the present disclosure. [Figure 2] FIG. 2 is a diagram showing an example of an unsealed pedestal. [Figure 3] FIG. 3 is a diagram showing an example of the sealed pedestal of FIG. 1 in more detail. [Figure 4] FIG. 4 is a diagram showing an example of a bottom plate for sealing the bottom surface of the base portion of the pedestal of FIG. 3 in more detail. [Figure 5] FIG. 5 is a diagram showing an example of the bottom view of the upper plate for sealing the pedestal of FIG. 3 in more detail. [Figure 6] FIG. 6 is a diagram showing an example of the top view of the upper plate for sealing the pedestal of FIG. 3 in more detail. [Figure 7] FIG. 7 is a diagram showing another example of the top view of the upper plate for sealing the pedestal of FIG. 3 in more detail. [Modes for carrying out the invention]

[0033] In drawings, reference numbers can be reused to identify similar and / or identical elements.

[0034] Ceramic pedestals can operate at higher operating temperatures than metal pedestals and are more resistant to process chemicals, which is why many substrate processing systems use ceramic pedestals instead of metal pedestals. In logic applications, the upper limit of the operating temperature is approximately 450°C, which is within the thermal performance range of metal pedestals (e.g., pedestals made of aluminum, stainless steel, or metal alloys). While these metal pedestals can function well at these temperatures, they are not compatible with process chemicals. For example, these metal pedestals corrode and flake over time, causing undesirable contamination within the processing chamber.

[0035] This disclosure provides a metal pedestal sealed with an outer layer of a different metal material from the metal material of the pedestal. The outer layer metal material is thermally compatible with the metal material of the pedestal and is resistant to process chemicals (e.g., corrosion or erosion). For example, the pedestal may be made of aluminum, stainless steel, or a metallic alloy, and the outer layer may be made of nickel. The outer layer may be constructed using several manufacturing methods, including metal cladding, friction stir welding, welding, plating, coating, brazing, and diffusion bonding.

[0036] The combination of materials used for the pedestal and outer layer, and the manufacturing method used to seal the pedestal with the outer layer, allows for the use of preferred materials for the pedestal and outer layer. For example, aluminum, stainless steel, or alloys of metallic materials can be used to manufacture the pedestal due to the ease of manufacture and desired thermal conductivity provided by these materials, while nickel can be used to form the outer layer due to its thermal compatibility with the pedestal material and its chemical compatibility and resistance to process chemicals.

[0037] By sealing the pedestal with an outer layer using a combination of different manufacturing methods, different regions of the pedestal can be sealed using outer layers of different thicknesses. Therefore, by using different materials and different manufacturing methods, pedestals containing hybrid material structures can be manufactured to meet desired thermal and chemical performance requirements that cannot be achieved with metal pedestals containing a single metal material.

[0038] Specifically, as will be explained in detail below, different manufacturing methods can be used to seal each part of the pedestal with an outer layer of a thickness best suited to that area of ​​the pedestal. For example, on the upper surface of the pedestal where the substrate is placed during processing and where thermal and chemical harshness is most pronounced during processing, a thick plate of nickel can be joined using cladding techniques or friction stir welding to provide the desired thermal connection between the nickel surface and the aluminum core of the pedestal. Cladding techniques or friction stir welding allow the nickel layer on the upper surface of the pedestal to be thicker than plating or coating, which is beneficial because it allows various surface features (e.g., grooves and through-holes for vacuum clamping and edge gas supply) to be machined into the nickel layer without penetrating into the aluminum beneath the nickel layer.

[0039] Friction stir welding can be used instead of cladding in areas of the pedestal where a non-flat surface is desired at the nickel / aluminum interface, or where gaps or channels are provided in the nickel layer. For example, such areas include the bottom-side region of the pedestal through which gas channels pass, or where gaps (cavities) are included in the nickel layer to minimize thermal conductivity between components. Gaps in the nickel layer on the bottom surface of the pedestal can reduce heat loss from the pedestal to the processing chamber or other components adjacent to the pedestal. The gaps eliminate the need for expensive heat shields that are separately used between the pedestal and adjacent chamber surfaces or components to reduce heat transfer from the pedestal. Plating and / or coating techniques can be used to seal other areas of the pedestal, such as the side walls, stem, and internal passages of the pedestal, because the thermal and chemical harshness is not as pronounced in these areas as it is in the top surface of the pedestal. These and other features of the present disclosure are described in detail below.

[0040] Figure 1 shows an example of a substrate processing system 10. The substrate processing system 10 comprises a processing chamber 12. The processing chamber 12 comprises a pedestal 14 and a shower head 16. The pedestal 14 comprises a base portion 18 and a stem portion 20. The stem portion 20 extends from the base portion 18 and is connected to the bottom of the processing chamber 12. The base portion 18 and the stem portion 20 contain a first metallic material. The base portion 18 of the pedestal 14 is sealed with a second metallic material 22. The second metallic material 22 is different from the first metallic material. For example, the first metallic material includes aluminum, stainless steel, or an alloy of the metallic material, and the second metallic material 22 includes nickel or a nickel alloy. In some examples, the first metallic material is aluminum, stainless steel, or aluminum, and the second metallic material is nickel.

[0041] The second metallic material 22 is thermally compatible with the first metallic material (for example, with respect to the coefficient of thermal expansion or CTE). For example, the CTEs of the first and second metallic materials are closely matched (e.g., within a narrow range) to prevent thermal deformation of either material (e.g., warping, cracking, contact degradation, etc.). The second metallic material 22 is not only chemically compatible with the process chemicals used in the processing chamber 12, but is also more resistant than the first metallic material to corrosion or erosion caused by the process chemicals used in the processing chamber 12. That is, the second metallic material 22 does not change the chemical properties of the process chemicals, and does not change its own chemical properties as a result of exposure to the process chemicals. As a result, the second metallic material 22 protects the first material of the pedestal 14 from exposure to process chemicals, prevents the pedestal 14 from corroding and peeling over time, and prevents contamination within the processing chamber 12. The second metal material 22 is connected to the first metal material in different areas of the base portion 18 and the stem portion 20 using different methods, as will be described in detail below. In some examples, the stem portion 20 may be made entirely of the second metal material. During processing, the substrate 24 is placed on the upper surface of the second metal material 22 that covers the upper surface of the base portion 18 of the pedestal 14.

[0042] The shower head 16 comprises a base portion 26 and a stem portion 28. The base portion 26 of the shower head 16 is cylindrical. The stem portion 28 of the shower head 16 extends from the base portion 26 of the shower head 16. The stem portion 28 of the shower head 16 is attached to the upper plate of the processing chamber 12. The stem portion 28 of the shower head 16 receives various gases (e.g., process gas, cleaning gas, etc.) from the gas delivery system 50 via the manifold 52. The base portion 26 of the shower head 16 includes a faceplate with through holes or slots (not shown) through which the gas is introduced into the processing chamber 12.

[0043] The substrate processing system 10 includes a gas delivery system 50. The gas delivery system 50 includes a gas supply source 54, a valve 56, and a mass flow controller (MFC) 58. The gas supply source 54 supplies various gases, such as process gas, inert gas (also called purge gas, edge gas, or carrier gas), and cleaning gas. The valve 56 is connected to the gas supply source 54 and can be controlled to supply gas to the MFC 58. The MFC 58 regulates the flow of gas to the manifold 52. The manifold supplies gas or a gas mixture to the showerhead 16.

[0044] The substrate processing system 10 includes a radio frequency (RF) power supply 60. The RF power supply provides RF power to the shower head 16 during the processing of the substrate 24 and during the cleaning of the processing chamber 12. The RF power excites the gas (e.g., process gas, cleaning gas) introduced into the processing chamber 12 to generate plasma between the shower head 16 and the pedestal 14.

[0045] The base portion 18 of the pedestal 14 is equipped with a heater 62. The heater 62 heats the base portion 18 of the pedestal 14, thereby heating the substrate 24. The base portion 18 of the pedestal 14 is equipped with a temperature sensor 64 for detecting the temperature of the pedestal 14.

[0046] The base portion 26 of the shower head 16 may also include a heater (not shown) for heating the gas introduced into the processing chamber 12. The base portion 26 of the shower head 16 may also include a temperature sensor 68 for detecting the temperature of the shower head 16.

[0047] The substrate processing system 10 includes a separate set of valves 70. Edge gas from one of the gas supply sources 54 is introduced into the pedestal 14 through one of the valves 70. The edge gas flows around the edges of the substrate 24 and controls the processing (e.g., deposition, etching) at the edges (bevels) of the substrate 24. A vacuum pump 72 is connected to the pedestal 14 via the valves 70. To clamp the substrate 24, the vacuum pump 72 creates a vacuum on the upper surface of the second metal material 22 that covers the upper surface of the base portion 18 of the pedestal 14.

[0048] Alternatively, although not shown, the pedestal 14 may use other types of support mechanisms to support the substrate 24. For example, the substrate 24 may be supported by a mesa positioned on the upper surface of a second metallic material 22 that covers the upper surface of the base portion 18 of the pedestal 14. A mesa is a small projection, also called a minimum contact area (MCA), and can have different shapes (e.g., cylindrical or polygonal). Regardless of the method used to support the substrate 24, the base portion 18 of the pedestal 14 is sealed with the second metallic material 22, as will be described in more detail below.

[0049] The substrate processing system 10 includes a controller 80. The controller 80 controls valves 56, 70, MFC 58, heaters in the pedestal 14 and shower head 16, RF power supply 60, the supply of coolant from the coolant supply source 66 to the pedestal 14 and shower head 16, and a vacuum pump 72. The controller 80 monitors the temperature of the pedestal 14 and shower head 16 using temperature sensors 64, 68 located in the pedestal 14 and shower head 16. The controller 80 controls the temperature of the pedestal 14 and shower head 16 by controlling the heaters in the pedestal 14 and shower head 16, as well as the supply of coolant from the coolant supply source 66 to the pedestal 14 and shower head 16.

[0050] Figure 2 shows an example of a pedestal 100 containing a first metallic material. The pedestal 100 is not sealed with a second metallic material, as will be described in more detail below. The pedestal 100 is usable in a processing chamber 12 (shown in Figure 1). The pedestal 100 comprises a base portion 102 and a stem portion 104. For example, the base portion 102 comprises three cylindrical plates 110, 112, and 114. The plates 110, 112, and 114 contain the first metallic material. The plates 110, 112, and 114 are brazed together to form the base portion 102 of the pedestal 100.

[0051] In the base portion 102 of the pedestal 100, the plate 110 has grooves 120 on its upper surface. The grooves 120 are annular. The grooves 120 are interconnected by radially extending grooves (not shown). A conduit 122 passes through the stem portion 104 of the pedestal 100, through plates 114, 112, and 110, and connects to groove 120 near the center of plate 110. The conduit 122 is connected to a vacuum pump 72 (shown in Figure 1). The vacuum pump 72 creates a vacuum through the annular grooves and radial grooves to clamp the substrate 24 to the upper surface of plate 110.

[0052] Plate 110 also includes an annular groove 130 along the outer circumference of its upper surface. Groove 130 is not in fluid communication with groove 120. Plate 112 includes grooves 132 and 134 that are connected to each other and are in fluid communication with groove 130 of plate 110. Conduit 136 penetrates the stem portion 104 of the pedestal 100, penetrates plates 114 and 112, and connects to groove 134 near the center of plate 112. Conduit 136 supplies edge gas through grooves 134, 132, and 130 to control the processing around the edges of the substrate 24.

[0053] A heater (e.g., heater 62 shown in Figure 1) is positioned between plates 112 and 114. A temperature sensor (e.g., temperature sensor 64 shown in Figure 1) is positioned within plate 110 (or may instead be positioned within plate 112). A conduit 140 extends through the stem 104 of the pedestal 100 and penetrates plate 114. Electrical connections to various components of the pedestal 100, such as heater 62 and temperature sensor 64, are provided through the conduit 140. The electrical connections are connected to a controller 80 (shown in Figure 1).

[0054] Thus, the first metal material used to form the pedestal 100 can withstand the operating temperatures of the various processes (e.g., substrate processing and chamber cleaning) performed in the processing chamber 12. However, the first metal material used to form the pedestal 100 cannot withstand the chemical harshness of the process chemicals used in these processes and deteriorates over time (e.g., it corrodes and peels off). Particles resulting from the erosion of the pedestal 100 contaminate the processing chamber 12.

[0055] Figure 3 shows an example of a pedestal 200 according to this disclosure. The pedestal 200 is similar to the pedestal 14 shown in Figure 1 and can be used in place of the pedestal 14 in the substrate processing system 10 shown in Figure 1. However, the pedestal 200 has a different design and configuration from the pedestal 100 shown in Figure 2, as will be described in detail below. The pedestal 200 differs from the pedestal 100 shown in Figure 2 in that the pedestal 200 is sealed with a second metallic material 22, as described above with reference to Figure 1 and in more detail below.

[0056] The second metal material 22 is resistant to the process chemicals used in the processing carried out in the processing chamber 12, and therefore the second metal material 22 prevents deterioration of the pedestal 200. Furthermore, the pedestal 200 does not have grooves formed in the plate of the first metal material for vacuum clamping and supplying edge gas. Instead, as will be described in detail below, the grooves are formed in the upper plate of the second metal material 22 that covers the upper surface of the base portion of the pedestal 200. Throughout the following description, the first and second metal materials referred to in the configuration of the pedestal 200 are the first and second metal materials described above with reference to Figure 1.

[0057] Specifically, the pedestal 200 comprises a base portion 202 and a stem portion 204. The base portion 202 and the stem portion 204 are made of a first metallic material. In some examples, the stem portion 204 may be made entirely of a second metallic material. Alternatively, the stem portion 204 may be made of a first metallic material coated or plated with a second metallic material. Examples of the first and second metallic materials have already been described above and will not be repeated for brevity. The base portion 202 is cylindrical. The base portion 202 comprises a first plate 206 and a second plate 208. The first and second plates 206, 208 are cylindrical. The first and second plates 206, 208 contain (i.e., are made of) a first metallic material. The first and second plates 206, 208 are solid (i.e., do not contain cavities such as grooves used for vacuum clamping and edge gas supply). The top and bottom surfaces of the first plate 206 are flat and lack features such as grooves used for vacuum clamping and edge gas supply. The first plate 206 is thicker than the second plate 208.

[0058] The first plate 206 forms the majority (e.g., over 80% or 90%) of the base portion 202 of the pedestal 200. A heater (e.g., heater 62 shown in Figure 1) is positioned between the first plate and the second plates 206, 208. The second plate 208 is brazed to the first plate 206. Since the first and second plates 206, 208 are solid, the base portion 202 does not have any hollow spaces (e.g., grooves used for vacuum clamping and edge gas supply). The base portion 202 is a homogeneous solid block of the first metallic material. This allows the base portion 202 to uniformly distribute heat from the heater 62 throughout the base portion 202.

[0059] The base portion 202 is sealed with a second metallic material (for example, the second metallic material 22 shown in Figure 1) as follows. An example of the second metallic material has already been described above and will not be repeated for brevity. The upper plate 210 containing the second metallic material is joined to the first plate 206 (described below) using another plate 218 positioned between the upper plate 210 and the first plate 206, using friction stir welding, brazing, diffusion bonding, or cladding techniques. The upper plate 210 is cylindrical. The upper plate 210 is thinner than the first plate 206. The upper plate 210 has grooves used for vacuum clamping and edge gas supply. The upper plate 210 is shown and described in more detail below with reference to Figures 5-7.

[0060] In short, the upper surface of the upper plate 210 has a groove indicated by 212 to provide a vacuum clamp for clamping a substrate (e.g., substrate 24 shown in Figure 1) to the pedestal 200. Furthermore, the upper plate 210 has grooves 214, 215, and 216 for supplying edge gas to control the processing at the edges of the substrate 24. Grooves 212, 214, 215, and 216 are similar to grooves 120, 130, 132, and 134 of the pedestal 100 shown in Figure 2, except that grooves 120, 130, 132, and 134 are formed on the plate 110 of the base portion 102 of the pedestal 100, where plate 110 is made of a first metallic material, and grooves 212, 214, 215, and 216 are not formed on the first plate 206 of the pedestal 200, where the first plate 206 is made of a first metallic material. Instead, grooves 212, 214, 215, and 216 are formed in the upper plate 210, which is made of a second metal material. Further details of the upper plate 210 are described below with reference to Figures 5 to 7.

[0061] The bottom surface of the upper plate 210 is provided with a plenum for providing a vacuum and supplying edge gas (shown and described in detail with reference to Figure 5). A planar plate 218 containing a second metallic material is interposed between the bottom surface of the upper plate 210 and the top surface of the first plate 206 of the base portion 202. The planar plate 218 is cylindrical. The planar plate 218 is solid (i.e., without voids). The planar plate 218 seals the first plate 206 from the plenum of the upper plate 210. The planar plate 218 is thinner than the upper plate 210. The planar plate 218 can be bonded to the top surface of the first plate 206 of the base portion 202 using friction stir welding, brazing, diffusion bonding, or cladding techniques. The upper plate 210 can be bonded to the top surface of the planar plate 218 using diffusion bonding or another bonding method.

[0062] The bottom plate 220, which includes a second metallic material, is joined to the bottom surface of the second plate 208 using friction stir welding, brazing, diffusion bonding, or cladding techniques. The interface between the bottom surface of the second plate 208 and the top surface of the bottom plate 220 is shown and described in detail below with reference to Figure 4. In short, the bottom plate 220 is also cylindrical and thinner than the top plate 210. The bottom plate 220 can also be thinner than the second plate 208. The bottom plate 220 may have a gap, which is shown and described in further detail below with reference to Figure 4. The gap reduces heat transfer from the heater 62 to the area surrounding the pedestal 200.

[0063] The conduit 222 passes through the stem portion 204 of the pedestal 200, through plates 220, 208, 206, and 218, and connects to a groove 212 near the center of the upper plate 210. The conduit 222 is connected to a vacuum pump 72 (shown in Figure 1). The vacuum pump 72 creates a vacuum through the groove 212 to clamp the substrate 24 to the upper surface of the upper plate 210.

[0064] Grooves 214, 215, and 216, used for supplying edge gas, are fluid-connected to each other but not to groove 212. Conduit 236 penetrates the stem portion 204 of the pedestal 200, passes through plates 220, 208, 206, and 218, and connects to groove 216 near the center of the upper plate 210. Conduit 236 supplies edge gas through grooves 214, 215, and 216 to control the processing around the edges of the substrate 24.

[0065] A temperature sensor (e.g., temperature sensor 64 shown in Figure 1) is positioned on the first plate 206, planar plate 218, or upper plate 210 of the base portion 202 of the pedestal 200. The temperature sensor 64 may extend to the planar plate 218 or upper plate 210 to accurately measure the temperature of the surface in contact with the substrate 24. The temperature sensor 64 monitors the temperature of the pedestal 200 and the substrate 24 and is connected to a controller 80 (shown in Figure 1). A conduit 240 extends through the stem portion 204 of the pedestal 200 and passes through plates 220, 208, and 206. Electrical connections to various components of the pedestal 200, such as the heater 62 and the temperature sensor 64, are provided through the conduit 240. The electrical connections are connected to the controller 80 (shown in Figure 1).

[0066] The sidewalls of the first and second plates 206, 208 of the base portion 202 of the pedestal 200 are coated or plated with a layer 250 of a second metallic material. Alternatively, an annular layer 250 of the second metallic material is joined (e.g., by welding or by another method) to the sidewalls of the first and second plates 206, 208 of the base portion 202 of the pedestal 200. The layer 250 is thinner than the upper plate 210 and the bottom plate 220. Thus, the upper plate 210, the bottom plate 220, and the layer 250 of the second metallic material seal the base portion 202 of the pedestal 200 and protect the base portion 202 of the pedestal 200 from the harsh chemical reactions used to process the substrate 24 and clean the processing chamber 12 (shown in Figure 1).

[0067] Furthermore, if the stem portion 204 of the pedestal contains the first metallic material, the stem portion 204 is also coated or plated with a layer 252 of the second metallic material. The layer 252 of the second metallic material protects the stem portion 204 of the pedestal 200 from the harsh chemical reactions used to process the substrate 24 and clean the processing chamber 12 (as shown in Figure 1). Layer 252 can be thinner than layer 250. Thus, the entire pedestal 200 is sealed with the second metallic material that protects the pedestal 200 from the harsh chemical reactions used to process the substrate 24 and clean the processing chamber 12 (as shown in Figure 1).

[0068] Figure 4 shows in more detail the interface between the bottom surface of the second plate 208 and the top surface of the bottom plate 220. The bottom surface of the first plate 206 and the top surface of the second plate 208 are provided with grooves in which the heater 62 is located. The first and second plates 206 and 208 are brazed to each other so as to have no gaps between them. Thus, the first and second plates 206 and 208 form the base portion 202 of the pedestal 200, which is a homogeneous solid block of the first metallic material.

[0069] The bottom surface of the second plate 208 and the top surface of the bottom plate 220 are provided with annular protrusions and annular grooves. The bottom surface of the second plate 208 is provided with annular protrusions 262 and annular grooves 264. The top surface of the bottom plate 220 is provided with annular protrusions 266 and annular grooves 268. When the bottom plate 220 is joined to the second plate 208, the annular protrusions 262 and annular grooves 264 on the bottom surface of the second plate 208 fit into the annular grooves 268 and annular protrusions 266 on the top surface of the bottom plate 220, respectively.

[0070] The height of the annular ridge 262 is the same as the depth of the annular groove 264. The height of the annular ridge 266 is the same as the depth of the annular groove 268. The height of the annular ridge 262 is less than the depth of the annular groove 268. The height of the annular ridge 266 is greater than the depth of the annular groove 264. In addition, the annular groove 268 is wider (radially) than the annular ridge 262. The annular groove 264 is wider (radially) than the annular ridge 266. As a result, when joining the bottom plate 220 to the second plate 208, gaps 260 are formed between the annular ridge 262 and the annular groove 268, and between the annular ridge 266 and the annular groove 264. The gaps 260 surround the annular ridges 262 and 266.

[0071] The gap 260 provides insulation that prevents heat from the heater 62 from being transferred to the area surrounding the pedestal 200. As a result, the maximum heat from the heater 62 is transferred to the base 202, planar plate 218, upper plate 210, and substrate 24 (shown in Figure 3) of the pedestal 200. Therefore, the power consumed by the heater 62 is reduced compared to the power consumed by the pedestal 100 shown in Figure 1, which is not sealed with the second metallic material. In other words, as heat loss is reduced, the power supplied to the heater 62 to heat the pedestal 200 is less than the power supplied to the pedestal 100 to heat the substrate 24 (shown in Figure 1).

[0072] Figures 5 and 6 show examples of bottom and top views of the upper plate 210, respectively. Figures 5 and 6 show an example of an upper plate 210 configured to provide a vacuum clamp and supply edge gas. Figure 7 shows another example of a top view of the upper plate 210, which is configured to support the substrate 24 with a mesa located on the top surface of the upper plate 210 and also supply edge gas.

[0073] In Figure 5, the upper plate 210 comprises two separate plenums that provide vacuum and edge gas independently (i.e., separately), as described below. Each plenum has various grooves. The grooves in each plenum are in fluid communication with each other. The two plenums are not in fluid communication with each other. The groove configuration described below is an example and can be modified.

[0074] The upper plate 210 (and all other plates of the base portion 202, though not shown) is provided with through holes 274 into which lift pins (not shown) are inserted to lower and raise the substrate 24. The diameter of the planar plate 218 is larger than the groove 214 used to supply edge gas. Thus, the planar plate 218 isolates the two plenums in the upper plate 210 from the base portion 202 of the pedestal 200 from process chemicals. The planar plate 218 prevents process chemicals from reaching the base portion 202 of the pedestal 200 through the two plenums in the upper plate 210.

[0075] The bottom surface of the upper plate 210 is provided with holes 270 and 272. Hole 270 is connected to a conduit 222 which is connected to a vacuum pump 72 via one of the valves 70 (shown in Figure 1). Hole 272 is connected to a conduit 236 which is connected to one of the gas supply sources 54 that supply edge gas via one of the valves 70 (shown in Figure 1).

[0076] The bottom surface of the upper plate 210 has a plurality of grooves 213 extending radially from the hole 270. The grooves 213 connect the hole 270 to an annular groove 212. The groove 212 has a plurality of holes 276. The groove 212 connects to a network of other grooves on the upper surface of the upper plate 210 shown in Figure 6. This network of grooves extends across the entire upper surface of the upper plate 210 to provide a vacuum for clamping the substrate 24 (shown in Figure 1) to the upper surface of the upper plate 210. The grooves 212 and holes 276 define a first plenum within the upper plate 210, which is used to provide a vacuum for clamping the substrate 24 (shown in Figure 1) to the upper surface of the upper plate 210.

[0077] The bottom surface of the upper plate 210 has a second network of grooves connecting holes 272 to groove 214. Grooves 214 have a plurality of holes 278 from which edge gas is supplied around the edge of the substrate 24. The second network of grooves has a first groove 280 that extends radially from holes 272 and connects to an arcuate groove 282. The arcuate groove 282 is shown as an example only and may have other shapes instead. The ends of the arcuate groove 282 are connected to a pair of grooves 284, 286 that extend radially outward. Grooves 284, 286 are connected to a pair of arcuate grooves 288, 290, respectively. Again, grooves 288, 290 are shown as arcuate only as an example and may have other shapes instead. The ends of the arcuate grooves 288, 290 extend radially outward and connect to groove 214. Grooves 280, 282, 284, 286, 288, 290, and 214 are in fluid communication with holes 272 and conduits 236. As a result, edge gas supplied through holes 272 flows into groove 214 through grooves 280, 282, 284, 286, 288, and 290. Grooves 280, 282, 284, 286, 288, 290, and 214 define a second plenum of the upper plate 210, which is used to supply edge gas around the edge of the substrate 24 (shown in Figure 1) on the upper surface of the upper plate 210. Grooves 280, 282, 284, 286, 288, 290, and 214 are shown overall as 214, 215, and 216 in Figure 3.

[0078] In Figure 6, the upper surface of the upper plate 210 is provided with holes 278 through which edge gas is supplied as described above. The upper surface of the upper plate 210 is provided with grooves 212 and holes 276. Groove 212 is connected to a network of annular and radial grooves extending across the entire upper surface of the upper plate 210 to provide a vacuum for clamping the substrate 24 (shown in Figure 1) to the upper surface of the upper plate 210. Multiple grooves 292 extend radially outward from groove 212. Grooves 292 are connected to the first annular groove 294. Multiple grooves 296 extend radially outward from the first annular groove 294. Grooves 296 are connected to the second annular groove 298.

[0079] The diameter of the first annular groove 294 is greater than the diameter of groove 212. The diameter of the second annular groove 298 is greater than the diameter of the first annular groove 294. The diameter of the second annular groove 298 is smaller than the diameter of groove 214. In some examples, the diameter of groove 214 may be slightly smaller or slightly larger than the diameter of the substrate 24. In other examples, the diameter of groove 214 may be the same as the diameter of the substrate 24.

[0080] For example, although only two annular grooves 294, 298 are shown, the upper surface of the upper plate 210 may include additional annular grooves similar to annular grooves 294, 298, and additional interconnecting radial grooves similar to grooves 292, 296, which connect the additional annular grooves to each other and connect to the network of grooves 212, 292, 294, 296, 298. Grooves 212, 292, 294, 296, 298 are shown overall as 212 in Figure 3. Grooves 212, 292, 294, 296, 298 are in fluid communication with holes 270 and conduits 222. Grooves 212, 292, 294, 296, 298 provide a vacuum for clamping the substrate 24 (shown in Figure 1) to the upper surface of the upper plate 210.

[0081] Groove 214 is circumscribing to grooves 212, 292, 294, 296, and 298, which are used to provide a vacuum clamp. Grooves 212, 213, 292, 294, 296, 298, holes 270, 276, and conduit 222 are separated from grooves 280, 282, 284, 286, 288, 290, 214, holes 272, 278, and conduit 236, and are not in fluid communication with them.

[0082] Depending on the support mechanism used to support the substrate 24 on the pedestal 200, and whether or not edge gas is supplied, the pedestal 200 may include fewer or different features than those shown in Figures 3 to 6. For example, if the pedestal 200 does not supply edge gas and is designed to provide a vacuum clamp, the conduit 236 can be omitted. Furthermore, elements 214, 278, 280, 282, 284, 286, 288, 290, 214, and 272 can be omitted from the upper plate 210. Thus, if the pedestal 200 does not supply edge gas and is designed to provide a vacuum clamp, the upper plate 210 may only include grooves 212, 213, 292, 294, 296, 298, holes 270, holes 276, and conduit 222 for providing a vacuum clamp, as described above with reference to Figures 5 and 6. All other elements and features of the pedestal 200 remain unchanged, as described above with reference to Figures 3-6.

[0083] Alternatively, if the pedestal 200 does not provide a vacuum clamp and is designed to supply edge gas, the conduit 222 can be omitted. Furthermore, elements 212, 213, 292, 294, 296, 298, 270, and 276 can be omitted from the upper plate 210. A mesa 300 can be provided on the upper surface of the upper plate 210, as shown in the top view of the upper plate 210 in Figure 7. The mesa 300 can extend from the center of the upper plate 210 to the inner diameter of the groove 214. Thus, if the pedestal 200 does not provide a vacuum clamp and is designed to supply edge gas, the upper plate 210 may consist only of the mesa 300, grooves 280, 282, 284, 286, 288, 290, 214, hole 272, and hole 278, as described above with reference to Figures 5 and 6. All other elements and features of the pedestal 200 remain unchanged as described above with reference to Figures 3 to 6.

[0084] In an alternative design, if the pedestal 200 is designed not to provide a vacuum clamp and not to supply edge gas, the conduits 222 and 236 can be omitted. Furthermore, elements 212, 213, 292, 294, 296, 298, 270, 276 and elements 280, 282, 284, 286, 288, 290, 214, 272, 278 can be omitted from the upper plate 210. Only the mesa 300 shown in Figure 7 may be provided on the top surface of the upper plate 210. The mesa 300 may extend from the center of the upper plate 210 to the outer diameter of the upper plate 210. Therefore, if the pedestal 200 is designed not to provide a vacuum clamp and not to supply edge gas, the upper plate 210 may have only the mesa 300 on its top surface. The bottom surface of the upper plate 210 is flat and may not have features such as grooves and holes shown in Figures 5 and 6. In this design, the planar plate 218 can be omitted. Therefore, in this design, the bottom surface of the upper plate 210 can be directly joined to the top surface of the first plate 206 of the base portion 202 of the pedestal 200. All other elements and features of the pedestal 200 remain unchanged as described above with reference to Figures 3 to 6.

[0085] The foregoing description is merely illustrative and is not intended to limit the Disclosure, its uses, or any applications. The broad teachings of this Disclosure can be implemented in various forms. Therefore, while this Disclosure includes certain examples, the true scope of this Disclosure should not be limited in this way, as other modifications become apparent when considering the drawings, specification, and appended claims.

[0086] It should be understood that one or more steps within the method may be performed in a different order (or simultaneously) without altering the principles of this disclosure. Furthermore, although each example is described above as having a specific feature, one or more of those features described in relation to any one of the examples in this disclosure may be implemented and / or combined with features in any of the other examples, even if the combination is not explicitly described. In other words, the examples described are not mutually exclusive, and permutations of one or more examples with respect to each other remain within the scope of this disclosure.

[0087] The spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using a variety of terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly stated to be “direct,” if a relationship between a first element and a second element is described in the above disclosure, that relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, or it may be an indirect relationship in which there are one or more intervening elements (spatially or functionally) between the first element and the second element. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning (A OR B OR C) using the non-exclusive logic OR, and not as meaning "at least one of A, at least one of B, and at least one of C."

[0088] In some implementations, the controller is part of a system that may be part of the examples described above. Such a system may comprise a semiconductor processing apparatus including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal or gas flow system). These systems may be integrated with electronic equipment for controlling pre-processing, in-processing, and post-processing operations of the semiconductor wafer or substrate.

[0089] Electronic devices may be referred to as “controllers” that can control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, a controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer and tool loading / unloading connected to or interfaced with a particular system, and other transfer tools and / or load locks.

[0090] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurement, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers (e.g., software) that execute program instructions.

[0091] Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a specific process on a semiconductor wafer or system. In some examples, operational parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps during the manufacturing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0092] In some implementations, the controller may be part of, or coupled to, a computer integrated with, coupled to, or otherwise networked to, the system, or a combination thereof. For example, the controller may be in all or part of a “cloud” or fab host computer system, enabling remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, to investigate the history of past manufacturing operations, to investigate trends or performance metrics from multiple manufacturing operations, to change the parameters of the current process, to set processing steps to follow the current process, or to start a new process.

[0093] In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network that may include a local network or the internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control.

[0094] Therefore, as described above, the controllers may be distributed, for example, by comprising one or more individual controllers that are networked together and operate toward a common purpose, such as the processes and control described herein. An example of a distributed controller for such purposes may be one or more integrated circuits on a chamber that communicate with one or more remotely located integrated circuits (such as platform-level or part of a remote computer) that are combined to control the processes on the chamber.

[0095] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems associated with or usable in the processing and / or manufacture of semiconductor wafers.

[0096] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material transport to carry wafer containers to and from tool locations and / or load ports in the semiconductor manufacturing plant. [Explanation of Symbols]

[0097] 10 Substrate processing system, 12 Processing chamber, 14 Pedestal, 16 Shower head, 18 Base section, 20 Stem section, 22 Metal material, 24 Substrate, 26 Base section, 28 Stem section, 50 Gas delivery system, 52 Manifold, 54 Gas supply source, 56 Valve, 58 Mass flow controller (MFC), 60 RF power supply, 62 Heater, 64 Temperature sensor, 66 Coolant supply source, 68 Temperature sensor, 70 Valve, 72 Vacuum pump, 80 Controller, 100 Pedestal, 102 Base section, 104 Stem section, 110 Cylindrical plate, 112 Cylindrical plate, 114 Cylindrical plate, 120 Groove, 122 Conduit, 130 Annular groove, 132 Groove, 134 Groove, 136 Conduit, 140 Conduit, 200 Pedestal, 202 Base section, 204 Stem section, 206 First plate, 208 Second plate, 210 Upper plate, 212 Groove, 213 Groove, 214 Groove, 215 Groove, 216 Groove, 218 Flat plate, 220 Bottom plate, 222 Conduit, 236 Conduit, 240 Conduit, 250 Second metallic layer, 252 Second metallic layer, 260 Gap, 262 Annular ridge, 264 Annular groove, 266 Annular ridge, 268 Annular groove, 270 Hole, 272 Hole, 274 Through hole, 276 Hole, 278 Hole, 280 First groove, 282 Arc-shaped groove, 284 Groove, 286 Groove, 288 Arc-shaped groove, 290 Arc-shaped groove, 292 groove, 294 annular groove, 296 groove, 298 annular groove, 300 mesa

Claims

1. A pedestal for a substrate processing system, A base portion including a first metal material, The stem portion connected to the base portion, A second metal material for sealing the base portion, wherein the second metal material is different from the first metal material, A pedestal for a substrate processing system, comprising the above features.

2. The pedestal according to claim 1, wherein the first metallic material is selected from the group consisting of aluminum, stainless steel, and aluminum alloys, and the second metallic material is nickel or a nickel alloy.

3. The pedestal according to claim 1, wherein the second metal material has greater resistance than the first metal material to process the substrate on the pedestal in the processing chamber of the substrate processing system and to process chemicals used to clean the processing chamber.

4. The pedestal according to claim 1, wherein the first and second metallic materials are thermally compatible with each other.

5. The pedestal according to claim 1, wherein the first thickness of the second metal material on the upper surface of the base portion is greater than the second thickness of the second metal material on the bottom surface and side surface of the base portion.

6. The pedestal according to claim 1, wherein the stem portion is sealed with the second metal material, and at least two different surface regions of the base portion and the stem portion are sealed with the second metal material using different sealing methods.

7. The pedestal according to claim 1, wherein the stem portion includes the second metal material.

8. The pedestal according to claim 1, wherein the stem portion includes the first metal material, and the outer surface of the stem portion is sealed with the second metal material.

9. The base portion is A first plate comprising the first metal material, comprising a first surface and a second surface, A second plate comprising the first metal material, wherein the second plate comprises a first surface and a second surface, the first surface of the second plate is joined to the second surface of the first plate, and the side walls of the first and second plates are covered with a first layer of the second metal material, A third plate comprising the second metal material, the third plate comprising a first surface and a second surface, A fourth plate comprising the second metal material, wherein the fourth plate comprises a first surface and a second surface, the first surface of the fourth plate is joined to the second surface of the third plate, and the second surface of the fourth plate is joined to the first surface of the first plate, A fifth plate comprising the second metal material, wherein the fifth plate comprises a first surface and a second surface, the first surface of the fifth plate is joined to the second surface of the second plate, and the second surface of the fifth plate is joined to the stem portion, A pedestal according to claim 1, comprising:

10. The pedestal according to claim 9, wherein the third plate has a thickness greater than the thickness of the fifth plate and less than the thickness of the first plate, the first plate has a thickness greater than the second plate, and the fifth plate has a thickness less than the second plate.

11. The pedestal according to claim 10, wherein the stem portion comprises the first metal material and is covered with a second layer of the second metal material, the second layer being thinner than the third and fifth plates, and the first layer of the second metal material covering the side walls of the first and second plates.

12. The pedestal according to claim 9, wherein the third plate is provided with a pair of grooves, and the pedestal further comprises a conduit coupled to the pair of grooves and extending through the stem, the fifth plate, the second plate, the first plate, and the fourth plate, the fourth plate sealing the first plate from the pair of grooves.

13. A system comprising a pedestal according to claim 12, further comprising a vacuum pump coupled to the conduit, wherein the vacuum pump is configured to create a vacuum in the set of grooves and clamp the substrate to the first surface of the third plate.

14. The system comprising a pedestal according to claim 12, wherein the third plate has a pair of holes around the first surface of the third plate, the pair of holes being in fluid communication with the pair of grooves, and the system further comprises a gas supply source coupled to the conduit, the gas supply source being configured to supply gas through the pair of grooves and the pair of holes.

15. The pedestal according to claim 9, wherein the third plate comprises a first set of grooves, a second set of grooves, and a set of holes around the periphery of the first surface of the third plate, the set of holes being in fluid communication with the second set of grooves, and the first set of grooves being separated from the second set of grooves and the set of holes.

16. The pedestal according to claim 15, further comprising a first conduit and a second conduit disposed through the stem portion and at least partially through the base portion, wherein the first conduit is connected to a first pair of grooves, the second conduit is connected to a second pair of grooves, and the fourth plate seals the first plate from the first and second pairs of grooves and the pair of holes.

17. A vacuum pump coupled to the first conduit, configured to create a vacuum in the first set of grooves for clamping a substrate to the first surface of the third plate, A gas supply source connected to the second conduit, configured to supply gas through the second set of grooves and the set of holes, A system comprising the pedestal according to claim 16, further comprising the system comprising the pedestal according to claim 16.

18. The pedestal according to claim 9, further comprising a heater disposed between the first plate and the second plate, wherein the interface between the second plate and the fifth plate has a gap configured to reduce heat transfer from the fifth plate to the region around the pedestal.

19. The present invention further comprises a heater positioned between the first plate and the second plate, The second surface of the second plate and the first surface of the fifth plate are provided with raised portions and grooves, and the heater is aligned with the raised portion on the second surface of the second plate. The raised portion on the first surface of the fifth plate is joined to the groove on the second surface of the second plate. The groove on the first surface of the fifth plate is configured to provide a gap around the raised portion on the second surface of the second plate, The gap is configured to reduce heat transfer from the fifth plate to the area surrounding the pedestal. The pedestal according to claim 9.

20. The base portion is A first plate comprising the first metal material, the first plate comprising a first surface and a second surface, A second plate comprising the first metal material, wherein the second plate comprises a first surface and a second surface, the first surface of the second plate is joined to the second surface of the first plate, and the side walls of the first and second plates are covered with a first layer of the second metal material, A third plate comprising the second metal material, wherein the third plate comprises a first surface and a second surface, the first surface of the third plate includes a projection for supporting a substrate, and the second surface of the third plate is joined to the first surface of the first plate, A fourth plate comprising the second metal material, wherein the fourth plate comprises a first surface and a second surface, the first surface of the fourth plate is joined to the second surface of the second plate, and the second surface of the fourth plate is joined to the stem portion, A pedestal according to claim 1, comprising:

21. The pedestal according to claim 20, wherein the third plate has a thickness that is thicker than the fourth plate and thinner than the first plate, the first plate has a thickness that is thicker than the second plate, and the fourth plate has a thickness that is thinner than the second plate.

22. The pedestal according to claim 20, wherein the stem portion comprises the first metal material and is covered with a second layer of the second metal material, the second layer being thinner than the third and fourth plates and the first layer.

23. The pedestal according to claim 20, wherein the third plate comprises a pair of grooves, the pedestal further comprises a conduit connected to the pair of grooves via the stem, the fourth plate, the second plate, and the first plate, and further comprises a fifth plate sealing the first plate from the pair of grooves.

24. A system comprising a pedestal according to claim 23, wherein the third plate has a pair of holes around the first surface of the third plate, the pair of holes being in fluid communication with the pair of grooves, the fifth plate sealing the first plate from the pair of holes, and the system further comprises a gas supply source coupled to the conduit, the gas supply source being configured to supply gas through the pair of grooves and the pair of holes.

25. The pedestal according to claim 20, further comprising a heater disposed between the first plate and the second plate, wherein the interface between the second plate and the fourth plate has a gap configured to reduce heat transfer from the fourth plate to the area surrounding the pedestal.

26. The present invention further comprises a heater positioned between the first plate and the second plate, The second surface of the second plate and the first surface of the fourth plate are provided with raised portions and grooves, and the heater is aligned with the raised portion on the second surface of the second plate. The raised portion on the first surface of the fourth plate is joined to the groove on the second surface of the second plate. The groove on the first surface of the fourth plate is configured to provide a gap around the raised portion on the second surface of the second plate, The gap is configured to reduce heat transfer from the fourth plate to the area surrounding the pedestal. The pedestal according to claim 20.

Images