Method for depositing dielectric films with enhanced stability

Abstract

Embodiments include a semiconductor processing method for forming a dielectric film on a semiconductor substrate. This method may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing area of ​​a semiconductor processing chamber. The substrate may be placed within the processing area. This method may include providing an inert precursor to the processing area of ​​a semiconductor processing chamber. This method may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. This method may include depositing a silicon-containing material on the substrate.

Description

[Technical Field]

[0001] Cross-reference with related applications

[0001] This application claims the interests and priority of U.S. Patent Application No. 18 / 192,563, “Methods for Depositing Dielectric Films with Increased Stability,” filed on 29 March 2023, which is incorporated herein by reference in its entirety.

[0002] Technical field

[0002] This technology relates to a deposition method. More specifically, this technology relates to a method for depositing a dielectric film having improved stability at a low temperature. [Background technology]

[0003] background

[0003] Integrated circuits are made possible by a process that generates material layers with complex patterns on the surface of a substrate. Manufacturing patterned materials on a substrate requires a controlled method for forming and removing the material. The properties of the material can affect how the device operates and can also affect how the films are removed relative to each other. Plasma-enhanced deposition can produce films with specific properties. Many of the films that are formed require additional processing to adjust or enhance the material properties of the film in order to provide the desired properties.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high-quality devices and structures. These and other needs are addressed by this technology. [Overview of the project]

[0005] overview

[0005] Embodiments include a semiconductor processing method for forming a dielectric film on a semiconductor substrate. The method may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing area of ​​a semiconductor processing chamber. The substrate may be placed within the processing area. The method may include providing an inert precursor to the processing area of ​​a semiconductor processing chamber. The method may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The method may include depositing a silicon-containing material on the substrate.

[0006]

[0006] In the embodiment, the silicon-containing precursor is or may contain trimethylsilane (TMS). The nitrogen-containing precursor is or may contain ammonia (NH3). The inert precursor is or may contain argon. The flow rate ratio of the inert precursor to the silicon-containing precursor may be about 3:1 or more. Plasma effluents of the silicon-containing precursor, nitrogen-containing precursor, and inert precursor can be generated with a plasma power of about 250 W or more. The silicon-containing material can be characterized by a carbon content of about 20 at.% or more. The method may include depositing the silicon-containing material followed by performing a post-deposit plasma treatment on the silicon-containing material. The method may include stopping the flow of the silicon-containing precursor before performing the post-deposit plasma treatment on the silicon-containing material. The method may include bonding the silicon-containing material on a substrate to exposed silicon- and-carbon-containing material on a second substrate.

[0007]

[0007] Several embodiments of the present technology may encompass semiconductor processing methods. The method may include providing a silicon-containing precursor, a nitrogen-containing precursor, and argon to a processing area of ​​a semiconductor processing chamber. A substrate may be placed within the processing area. The method may include generating plasma effluent of the silicon-containing precursor, the nitrogen-containing precursor, and argon. The method may include depositing a silicon-containing material on the substrate. The silicon-containing material can be deposited at a rate of about 5,000 Å / min or less.

[0008]

[0008] In the embodiment, the flow rate of argon may be about 1,000 sccm or more. The temperature inside the semiconductor processing chamber can be maintained at about 300°C or less. The pressure inside the semiconductor processing chamber can be maintained at about 10 Torr or less. The silicon-containing material is characterized by an oxygen content of about 2.0 at.% or less. Following the aging period, the oxygen content in the silicon-containing material cannot increase beyond about 3.0 at.%. The silicon-containing material can be characterized by a Young's modulus of about 30 GPa or more, a hardness of about 5 GPa or more, or both.

[0009]

[0009] Several embodiments of the present technology may encompass semiconductor processing methods. The method may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing area of ​​a semiconductor processing chamber. A substrate may be placed within the processing area. The silicon-containing precursor, the nitrogen-containing precursor, or both may contain carbon. The method may include providing an inert precursor to the processing area of ​​a semiconductor processing chamber. The method may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The method may include depositing a silicon-containing material on a substrate. The silicon-containing material may be characterized by a carbon content of about 20 at.% or more. The method may include stopping the flow rate of the silicon-containing precursor. The method may include performing a post-deposit plasma treatment on the silicon-containing material.

[0010]

[0010] In this embodiment, the carbon content of the exposed surface of the silicon-containing material can be reduced by plasma treatment after deposition. The plasma power during plasma treatment after deposition can be maintained at approximately 1,500 W or less.

[0011]

[0011] Such techniques can offer many advantages compared to conventional processing methods. For example, using a precursor at a specific flow rate ratio can increase the carbon content of the deposited material. Increasing the carbon content can improve the bonding strength of the deposited material. Furthermore, using a precursor at a specific flow rate ratio allows for the deposition of a high-density material that is less susceptible to oxidation after deposition, which also contributes to high bonding strength in the deposited material. In addition, increasing the flow rate of the inert precursor at a specific flow rate ratio can stabilize the deposited material at a higher carbon content. Furthermore, post-deposition treatment can further enhance the stability of the deposited material, potentially making it suitable for bonding applications. These numerous advantages and features, along with other embodiments, will be described in more detail below in conjunction with the accompanying drawings. [Brief explanation of the drawing]

[0012]

[0012] The nature and advantages of the disclosed technology will be further understood by referring to the remainder of the specification and the drawings.

[0013] [Figure 1]

[0013] This is a top view of an exemplary processing system according to some embodiments of the present technology. [Figure 2]

[0014] A schematic cross-sectional view of an exemplary plasma system according to several embodiments of this technology is shown. [Figure 3]

[0015] The following describes the operational steps of an exemplary method for semiconductor processing according to several embodiments of this technology.

[0014]

[0016] Some diagrams are included as circuit diagrams. Please understand that the diagrams are for illustrative purposes only and should not be considered to scale unless explicitly stated otherwise. Furthermore, as schematic diagrams, they are provided to aid understanding and may not include all aspects or information compared to a realistic depiction, and may include exaggerated material for illustrative purposes.

[0015]

[0017] In the accompanying drawings, like components and / or features may have the same reference labels. Further, various components of the same type can be distinguished according to the reference signs by letters that distinguish between similar components. Where only a first reference sign is used in this specification, the description is applicable to any of the similar components having the same first reference sign, regardless of the letters.

Best Mode for Carrying Out the Invention

[0016] Detailed Description

[0018] During back-end-of-line (BEOL) semiconductor processing, dielectric films can perform multiple functions in the fabrication of the metallization layers of integrated circuits. These functions include incorporating an electrically insulating dielectric film between conductive metal-containing structures such as interconnect lines, contact holes, vias, etc. These functions can also include bonding different substrates or wafers, such as wafer-to-wafer bonding.

[0017]

[0019] Dielectric films used in BEOL processing, particularly for wafer-to-wafer bonding and other hybrid bonding applications, need to have an increased carbon content and mechanical properties with oxidation resistance. Unfortunately, these properties often conflict in dielectric films made from silicon-containing materials. In many cases, an increased amount of carbon in the material not only reduces the κ value and the mechanical stability of the film but also increases the likelihood of the material being oxidized after processing and before bonding.

[0018]

[0020] In many conventional techniques, the temperature at which a dielectric film can be deposited is limited by thermal budgets. When the temperature is low, the quality of the film deteriorates, not only reducing the carbon content and other mechanical properties, but also making the film more prone to oxidation. One way to improve the mechanical stability of a dielectric film is to densify the film during deposition. However, densification can lead to carbon depletion in the film and a potential deterioration of the binding energy. To counter carbon depletion, the temperature at which the dielectric film is deposited has been increased in conventional techniques, but it is still limited by the thermal budgets of other materials. Additionally, the exposed surfaces of conventional dielectric films are more prone to oxidation due to aging.

[0019]

[0021] The present technology can overcome these problems by incorporating embodiments of a semiconductor processing method for forming dielectric films with desired mechanical properties and high stability. In embodiments, these dielectric films can be characterized by an increased carbon content and desirable mechanical properties, while also being less prone to oxidation during aging. By performing deposition at low temperature using specific precursors and flow ratios, a high-density dielectric film with an increased carbon content can be deposited. Additionally, the present technology can include post-deposition processing to further reduce the susceptibility to oxidation. This may overcome the natural tendency for the film to be more prone to oxidation due to the increased carbon content.

[0020]

[0022] The remaining disclosure specifically identifies certain deposition processes that utilize the disclosed technology, but it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers, as well as processes that may occur in the described chambers. Accordingly, the present technology should not be considered limited to use with these specific deposition processes or chambers alone. In this disclosure, before explaining additional details according to embodiments of the present technology, one possible system and chamber that can be used to perform a deposition process according to embodiments of the present technology will be described.

[0021]

[0023] Figure 1 shows a plan view of one embodiment of a deposition, etching, firing, and curing chamber processing system 100 according to an embodiment. In the figure, a pair of forward-opening unified pods 102 are received by a robotic arm 104 and supplied with substrates of various sizes to be placed in a low-pressure holding area 106 before being placed in one of the substrate processing chambers 108a-108f, which are positioned in tandem sections 109a-109c. A second robotic arm 110 may be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-108f. Each substrate processing chamber 108a-108f can be equipped to perform several substrate processing operations, including the formation of stacks of semiconductor materials as described herein, in addition to other substrate processes including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and annealing, ashing, etc.

[0022]

[0024] The substrate processing chambers 108a-108f may include one or more system components for depositing, annealing, curing, and / or etching dielectric or other films on a substrate. In one configuration, two pairs of processing chambers (e.g., 108c-108d and 108e-108f) may be used to deposit dielectric material on the substrate, and a third pair of processing chambers (e.g., 108a-108b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-108f) may be configured to deposit alternating laminates of dielectric films on the substrate. One or more of the described processes may be performed in a chamber separated from the manufacturing system as shown in various embodiments. Additional configurations of deposition chambers, etching chambers, annealing chambers, and curing chambers for dielectric films will be understood as being intended by system 100.

[0023]

[0025] Figure 2 shows a schematic cross-sectional view of an exemplary plasma system 200 according to several embodiments of the present technology. The plasma system 200 shows a pair of processing chambers 108 that can be mounted on one or more of the tandem sections 109 described above, and the processing chambers 108 include a lid stack component according to embodiments of the present technology, which will be further described below. The plasma system 200 may generally include a chamber body 202 having side walls 212, a bottom wall 216, and an internal side wall 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A to 220B may be similarly configured and may include the same components.

[0024]

[0026] For example, the processing region 220B may have components included in the processing region 220A and may include a pedestal 228 positioned in the processing region through a passage 222 formed in the bottom wall 216 of the plasma system 200. The pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a main body portion. The pedestal 228 may include a heating element 232, such as a resistive heating element, which can heat and control the substrate temperature at a desired processing temperature. The pedestal 228 may be heated by a remote heating element, such as a lamp assembly, or by other heating devices.

[0025]

[0027] The body of the pedestal 228 may be connected to the stem 226 by a flange 233. The stem 226 may electrically connect the pedestal 228 to a power output or power box 203. The power box 203 may include a drive system that controls the raising and moving of the pedestal 228 within the processing area 220B. The stem 226 may also include a power interface for supplying power to the pedestal 228. The power box 203 may also include interfaces for power and temperature indicators, such as thermocouple interfaces. The stem 226 may include a base assembly 238 adapted to be detachably connected to the power box 203. A circumferential ring 235 is shown above the power box 203. In some embodiments, the circumferential ring 235 may be a shoulder adapted as a mechanical stopper or land configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0026]

[0028] The rod 230 may also be included in a passage 224 formed in the bottom wall 216 of the processing area 220B, and can be used to position the substrate lift pins 261 which are positioned through the body of the pedestal 228. The substrate lift pins 261 can selectively space the substrate 229 from the pedestal to facilitate the replacement of the substrate 229 using a robot used to transport the substrate 229 into and out of the processing area 220B through the substrate transfer port 260.

[0027]

[0029] A chamber lid 204 may be connected to the top of the chamber body 202. The lid 204 may house one or more precursor distribution systems 208 connected thereto. The precursor distribution system 208 may include a precursor inlet passage 240, which can supply reactants and washing precursors into the processing area 220B through a dual-channel showerhead 218. The dual-channel showerhead 218 may include an annular base plate 248 having a blocker plate 244 positioned in the middle of the faceplate 246. A radio frequency (RF) source 265 may be connected to the dual-channel showerhead 218, which may power the dual-channel showerhead 218 to facilitate the generation of a plasma region between the faceplate 246 and the pedestal 228 of the dual-channel showerhead 218. The dual-channel showerhead 218 and / or faceplate 246 may include one or more openings that allow the flow of precursor from the precursor distribution system 208 to the processing areas 220A and / or 220B. In some embodiments, the openings may include at least one of a linear opening and a conical opening. In some embodiments, an RF source may be connected to other parts of the chamber body 202, such as a pedestal 228, to facilitate plasma generation. A dielectric isolator 258 may be placed between the lid 204 and the dual-channel showerhead 218 to prevent the conduction of RF power to the lid 204. A shadow ring 206 that engages with the pedestal 228 may be placed around the pedestal 228.

[0028]

[0030] To cool the annular base plate 248 during the operation process, optional cooling channels 247 can be formed in the annular base plate 248 of the precursor distribution system 208. A heat transfer fluid (e.g., water, ethylene glycol, gas, etc.) can be circulated through the cooling channels 247 so that the base plate 248 can be maintained at a predetermined temperature. To prevent the side walls 201, 212 from being exposed to the processing environment within the processing area 220B, a liner assembly 227 can be positioned within the processing area 220B, adjacent to the side walls 201, 212 of the chamber body 202. The liner assembly 227 may include a circumferential pumping cavity 225 that can be connected to a pumping system 264 configured to exhaust gases and by-products from the processing area 220B and to control the pressure within the processing area 220B. Multiple exhaust ports 231 can be formed on the liner assembly 227. The exhaust port 231 may be configured to allow gas to flow from the processing area 220B to the circumferential pumping cavity 225 in a manner that facilitates processing within the system 200.

[0029]

[0031] Figure 3 shows the operating steps of an exemplary semiconductor processing method 300 according to several embodiments of the present technology. The method can be performed in a variety of processing chambers, including the processing system 200 described above, as well as any other chambers in which plasma deposition may be performed. Method 300 may include several optional operating steps, which may or may not be specifically associated with certain embodiments of the method according to the present technology. For example, many of the operating steps described are provided to offer a broader range of structure formation, but may not be critical to the technology or may be performed by alternative methods for ease of understanding.

[0030]

[0032] Method 300 may include additional processing steps before commencing the listed processing steps. For example, additional processing steps may include forming a structure on the semiconductor substrate, including both forming and removing material. The pre-processing steps may be carried out in the chamber in which Method 300 may be performed, or the processing may be carried out in one or more other processing chambers before the substrate is supplied to the semiconductor processing chamber in which Method 300 may be performed. Nevertheless, Method 300 may optionally include transporting the semiconductor substrate to a processing area of ​​a semiconductor processing chamber, such as one of the processing chambers 108a to 108f described above, or another chamber that may contain the components described above. The substrate may be placed on a substrate support, which may be a pedestal (such as pedestal 228), and may be placed in a processing area of ​​the chamber (such as processing area 220A or 220B described above).

[0031]

[0033] The substrate can be any number of materials on which deposition can be performed. The substrate may be a dielectric material containing silicon, germanium, silicon oxide, or silicon nitride, a metallic material, or any number of combinations of these materials, or may contain these materials, and may be a substrate or a material formed on the substrate. In some embodiments, any processing steps, such as pretreatment, may be performed to prepare the surface of the substrate for deposition. For example, pretreatment may be performed to provide the surface of the substrate with specific ligand ends that can promote nucleation of the film to be deposited. For example, other molecular ends, including hydrogen, oxygen, carbon, nitrogen, or any combination of these atoms or radicals, may be adsorbed, reacted, or formed on the surface of the substrate. In addition, material removal may be performed, such as reduction of native oxides or etching of the material, or any other steps that can prepare one or more exposed surfaces of the substrate for deposition.

[0032]

[0034] In operation step 305, one or more precursors may be provided to the processing area of ​​the semiconductor processing chamber. For example, in embodiments capable of forming a silicon-containing material, a silicon-containing precursor can be delivered to the processing area of ​​the processing chamber. In embodiments capable of forming a silicon-nitrogen-containing material, a nitrogen-containing precursor may be provided together with the silicon-containing precursor. However, it is also conceivable to provide a single precursor, such as a silicon-nitrogen-containing precursor, as an alternative or additional provision. In some embodiments of the technology, plasma-enhanced deposition can be performed, thereby accelerating the reaction and deposition of the material. Along with the silicon-containing precursor and / or the nitrogen-containing precursor, one or more inert precursors, such as argon, helium, or other inert gases, may be supplied to the processing area of ​​the semiconductor processing chamber.

[0033]

[0035] All precursors supplied to the processing area can be used in operation step 310 to form a plasma within the processing area of ​​the semiconductor processing chamber. For example, in an embodiment, method 300 may include generating plasma effluents of silicon-containing precursors, nitrogen-containing precursors, and inert precursors in operation step 310. In operation step 315, the silicon-containing material can be deposited on a substrate. As will be further described below, the technique can enable the deposition of silicon-containing materials characterized by desired properties, such as dielectrics with enhanced stability, including reduced susceptibility to oxidation. In an embodiment, after the deposition of the silicon-containing material, a post-deposit plasma treatment can be performed in an optional operation step 320 to further enhance the properties and / or stability of the silicon-containing material. Furthermore, method 300 may include bonding the silicon-containing material on the substrate to an exposed silicon-carbon-containing material on a second substrate.

[0034]

[0036] With regard to silicon-containing precursors, any number of precursors can be used in this technology. For example, silicon-containing precursors may include any silicon-containing material such as silane, disilane, methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, tetraethoxysilane (TEOS), triethoxysilane (TES), octamethylcyclotetrasiloxane (OMCTS), tetramethyldisiloxane (TMDSO), tetramethylcyclotetrasiloxane (TMCTS), tetramethyldiethoxydisiloxane (TMDDSO), dimethyldimethoxysilane (DMDMS), or other silicon-containing materials useful for semiconductor processing. Nitrogen-containing precursors may be any nitrogen-containing material such as nitrous oxide (N2O), nitrogen dioxide (NO2), ammonia (NH3), diazene (N2H2), or other nitrogen-containing materials useful for semiconductor processing. In embodiments, carbon may be included in the silicon-containing precursor, the nitrogen-containing precursor, or both. The inert precursor may include one or more noble gases, including argon or helium as described above, or other gases whose interactions are limited or which may not be incorporated into the deposited material.

[0035]

[0037] Depending on the precursor used, the silicon-containing precursor may be provided at a flow rate of approximately 2,000 sccm or less, approximately 1,750 sccm or less, approximately 1,500 sccm or less, approximately 1,250 sccm or less, approximately 1,000 sccm or less, approximately 950 sccm or less, approximately 900 sccm or less, approximately 850 sccm or less, approximately 800 sccm or less, 750 sccm, approximately 700 sccm or less, approximately 650 sccm or less, approximately 600 sccm or less, approximately 550 sccm or less, approximately 500 sccm or less, approximately 450 sccm or less, approximately 400 sccm or less, or less. Similarly, nitrogen-containing precursors can be supplied at flow rates of approximately 3,000 sccm or less, approximately 2,500 sccm or less, approximately 2,000 sccm or less, approximately 1,750 sccm or less, approximately 1,500 sccm or less, approximately 1,250 sccm or less, approximately 1,000 sccm or less, approximately 800 sccm or less, approximately 600 sccm or less, approximately 500 sccm or less, approximately 450 sccm or less, approximately 400 sccm or less, or less. Any additional range within the above range, or any combination of values ​​listed or not listed, may also be used.

[0036]

[0038] The inert precursor may be supplied at a flow rate of approximately 500 sccm or more, and may also be supplied at a flow rate of approximately 750 sccm or more, approximately 1,000 sccm or more, approximately 1,250 sccm or more, approximately 1,500 sccm or more, approximately 1,750 sccm or more, approximately 2,000 sccm or more, approximately 2,250 sccm or more, approximately 2,500 sccm or more, approximately 2,750 sccm or more, approximately 3,000 sccm or more, approximately 3,250 sccm or more, approximately 3,500 sccm or more, approximately 3,750 sccm or more, approximately 4,000 sccm or more, or higher. Increasing the amount of inert precursor may increase plasma density and ion collisions during the deposition of silicon-containing material. The increase in plasma density and ion collisions may result in the deposition of high-density silicon-containing material characterized by increased carbon content, which may be less susceptible to oxidation compared to conventional materials with similar carbon content. Using inert precursors such as argon can reduce the amount of hydrogen present in the deposited material and potentially decrease the likelihood of oxidation, as hydrogen is released as gas during deposition.

[0037]

[0039] In the embodiment, the flow rate ratio of the inert precursor to the silicon-containing precursor may be about 3:1 or higher. Maintaining a flow rate ratio of about 3:1 or higher can reduce the deposition rate of the silicon-containing material. A lower deposition rate allows the inert precursor to interact with the material being deposited for a longer period of time during deposition, potentially increasing the density of the deposited material. Therefore, in the embodiment, the flow rate ratio of the inert precursor to the silicon-containing precursor may be about 3:1 or higher, and can be maintained at about 4:1 or higher, about 5:1 or higher, about 6:1 or higher, about 7:1 or higher, about 8:1 or higher, about 9:1 or higher, about 10:1 or higher, or higher.

[0038]

[0040] It is also possible to adjust one or more additional aspects of Method 300 to improve aspects of the deposition being performed. For example, plasma power may affect the degree of dissociation of the precursor. Therefore, low plasma power may reduce the deposition rate of silicon-containing materials. However, low plasma power may also reduce the incorporation of carbon into the deposited material. Therefore, in some embodiments, plasma efflux can be generated at plasma power of about 200 W or more, about 250 W or more, about 300 W or more, about 350 W or more, about 400 W or more, about 450 W or more, about 500 W or more, about 600 W or more, about 700 W or more, about 800 W or more, about 900 W or more, about 1,000 W or more, or more. However, in embodiments, to limit the deposition rate, plasma efflux can be generated at about 1,000 W or less, and may also be generated at about 900 W or less, about 800 W or less, about 700 W or less, about 600 W or less, about 500 W or less, or less.

[0039]

[0041] In embodiments of this technology, deposition may be carried out at temperatures of about 50°C or higher for the substrate, pedestal, and / or chamber, and may also be carried out at temperatures of about 100°C or higher, about 150°C or higher, about 200°C or higher, about 300°C or higher, or above. The temperature may be maintained within these ranges, within a narrower range included in these ranges, or at any temperature between any of these ranges. In some embodiments, the method may be carried out on a substrate which may have several generated features, thereby generating a thermal budget. Therefore, in some embodiments, the method may be carried out at temperatures of about 350°C or lower, and may also be carried out at temperatures of about 300°C or lower, about 275°C or lower, about 250°C or lower, about 225°C or lower, about 200°C or lower, or below. The temperature may be maintained within these ranges, within a narrower range included in these ranges, or at any temperature between any of these ranges.

[0040]

[0042] The pressure within the processing area can affect the amount of ionization and physical interactions that occur during deposition. Lowering the processing pressure can increase ion interactions. Therefore, in some embodiments, the processing pressure during deposition may be maintained at about 20 Torr or less, about 15 Torr or less, about 10 Torr or less, about 9 Torr or less, about 8 Torr or less, about 7 Torr or less, about 6 Torr or less, about 5 Torr or less, about 4 Torr or less, about 3 Torr or less, about 2 Torr or less, or less.

[0041]

[0043] By adjusting the flow rate ratio of the inert precursor to the silicon-containing precursor, plasma power, or other processing characteristics, silicon-containing materials can be deposited at a rate of approximately 5,000 Å / min or less. As mentioned above, a lower deposition rate increases the interaction between the deposited silicon-containing material and the inert precursor, potentially resulting in a more stable material. Therefore, silicon-containing materials can be deposited at a rate of approximately 5,000 Å / min or less, and may be deposited at a rate of approximately 4,750 Å / min or less, approximately 4,500 Å / min or less, approximately 4,250 Å / min or less, approximately 4,000 Å / min or less, approximately 3,750 Å / min or less, approximately 3,500 Å / min or less, approximately 3,250 Å / min or less, approximately 3,000 Å / min or less, approximately 2,750 Å / min or less, approximately 2,500 Å / min or less, approximately 2,250 Å / min or less, approximately 2,000 Å / min or less, approximately 1,750 Å / min or less, approximately 1,500 Å / min or less, or less.

[0042]

[0044] Furthermore, maintaining a narrow gap between the substrate and the showerhead can increase the impact of inert precursor ions. As mentioned above, increased ionic impact can increase the density of the material and potentially reduce the likelihood of oxidation after processing. In the embodiment, the gap between the substrate and the showerhead may be maintained at about 450 mils or less, and can be maintained at about 425 mils or less, about 400 mils or less, about 380 mils or less, about 360 mils or less, about 340 mils or less, about 320 mils or less, about 300 mils or less, about 280 mils or less, about 260 mils or less, or less.

[0043]

[0045] As described above, Method 300 may include performing a post-deposition plasma treatment on the silicon-containing material in an optional operating step 320. Performing a post-deposition plasma treatment on the silicon-containing material may include stopping the flow rate of the silicon-containing precursor. However, the flow rates of other precursors, such as nitrogen-containing precursors and inert precursors which may contain both argon and helium, may be maintained. Post-deposition plasma treatment can reduce the carbon content of the exposed surface of the silicon-containing material. By performing the post-deposition treatment while maintaining the flow rates of nitrogen-containing precursors and / or inert precursors, the exposed surface of the silicon-containing material can be further densified, preventing oxygen intrusion and protecting the silicon-containing material from undesirable oxidation.

[0044]

[0046] During the post-deposition plasma treatment, the operating process conditions are maintained for the deposition in operation step 315 and may be maintained at any of the aforementioned levels. However, in some embodiments, it is conceivable that the plasma power, temperature, or pressure can be adjusted during the post-deposition plasma treatment. For example, the plasma power can be increased from a first plasma power level during deposition in operation step 315 to a second plasma power level during the post-deposition plasma treatment in an optional operation step 320. For example, deposition in operation step 315 may be performed with a plasma power of approximately 500 W, and the post-deposition plasma treatment in an optional operation step 320 may be performed with a plasma power of approximately 1,500 W or less.

[0045]

[0047] If processing continues, planarization operations such as chemical mechanical planarization may expose the underlying high-carbon content material. For example, as described above, the underlying high-carbon content material can be exposed before bonding the silicon-containing material on the substrate to the exposed silicon-carbon-containing material on the second substrate in the optional operation step 325. The stability of the silicon-containing material provided by this technology may increase the bond strength with the exposed silicon-carbon-containing material on the second substrate. Depending on the exposed silicon-carbon-containing material on the second substrate, the bond strength between the two substrates may be approximately 1 J / m 2 It may be greater than or equal to approximately 1.1 J / m³.2 Above, about 1.2 J / m 2 Above, about 1.3 J / m 2 Above, about 1.4 J / m 2 Above, about 1.5 J / m 2 [[ID=⑨]]Above, about 1.6 J / m 2 Above, about 1.7 J / m 2 Above, about 1.8 J / m 2 Above, about 1.9 J / m 2 Above, about 2.0 J / m 2 Above, about 2.2 J / m 2 Above, about 2.4 J / m 2 Above, about 2.6 J / m 2 Above, about 2.8 J / m 2 Above, about 3.0 J / m 2 Above, or may exceed it. It is considered that the bonding strength between the two substrates has been improved compared with the prior art because the carbon content has increased by this technology and the overall stability of the silicon-containing material has been improved.

[0046]

[0048] In an embodiment of the present technology, the silicon-containing material can be characterized by a carbon content of about 20 at.% or more. When the carbon content increases, the bonding energy or strength increases, so the silicon-containing material may be more suitable for bonding applications such as wafer-to-wafer bonding. Therefore, the silicon-containing material of the present technology can be characterized by a carbon content of about 20 at.% or more, and also a carbon content of about 20 at.% or more, a carbon content of about 22 at.% or more, a carbon content of about 24 at.% or more, a carbon content of about 26 at.% or more, a carbon content of about 28 at.% or more, a carbon content of about 30 at.% or more, a carbon content of about 32 at.% or more, a carbon content of about 34 at.% or more, a carbon content of about 36 at.% or more, a carbon content of about 38 at.% or more, a carbon content of about 40 at.% or more, a carbon content of about 42 at.% or more, a carbon content of about 44 at.% or more, a carbon content of about 46 at.% or more, a carbon content of about 48 at.% or more, a carbon content of about 50 at.% or more, or a carbon content of more than that. Furthermore, due to the characteristics of deposition, the silicon-containing material may be less likely to be oxidized during aging without sacrificing the carbon content in the material. Note: In the translation, the "⑨" in the original text seems to be a mislabeled ID. It should probably be "ID=9" in the original. I translated it as "⑨" in the English translation to maintain consistency with the provided text. If this is an error in the original, it should be corrected for a more accurate translation.

[0047]

[0049] Similarly, silicon-containing materials can be characterized by an oxygen content of approximately 3.0 at.% or less, and can be maintained at approximately 2.8 at.% or less, approximately 2.6 at.% or less, approximately 2.4 at.% or less, approximately 2.2 at.% or less, approximately 2.0 at.% or less, approximately 1.8 at.% or less, approximately 1.6 at.% or less, approximately 1.4 at.% or less, approximately 1.2 at.% or less, approximately 1.0 at.% or less, approximately 0.8 at.% or less, approximately 0.6 at.% or less, approximately 0.4 at.% or less, approximately 0.2 at.% or less, or less. This technology makes it possible to produce silicon-containing materials with high resistance to oxygen penetration and / or oxidation through deposition characteristics and / or plasma treatment after deposition. In the embodiment, after the aging period, the oxygen content in the silicon-containing material shall not increase by more than approximately 3.0 at.%, more than approximately 2.8 at.%, more than approximately 2.6 at.%, more than approximately 2.4 at.%, more than approximately 2.2 at.%, more than approximately 2.0 at.%, more than approximately 1.8 at.%, more than approximately 1.6 at.%, more than approximately 1.4 at.%, more than approximately 1.2 at.%, more than approximately 1.0 at.%, or less than these values.

[0048]

[0050] As described above, the processing method of this technology may include embodiments that utilize deposition precursors and processing conditions for forming dielectric films having low dielectric constants and high mechanical stability. In embodiments of processing method 300, the as-deposited dielectric film may be formed as a silicon-carbon-nitrogen-containing film having a dielectric constant of about 6.0 or less, about 5.9 or less, about 5.8 or less, about 5.7 or less, about 5.6 or less, about 5.5 or less, about 5.4 or less, about 5.3 or less, about 5.2 or less, about 5.1 or less, about 5.0 or less, about 4.9 or less, about 4.8 or less, about 4.7 or less, about 4.6 or less, about 4.5 or less, or less.

[0049]

[0051] The processing method of this technology includes embodiments for producing deposited dielectric films characterized by high mechanical stability. In embodiments, the deposited dielectric film can be characterized by a Young's modulus of about 30 GPa or more, and can also be characterized by a Young's modulus of about 35 GPa or more, about 40 GPa or more, about 45 GPa or more, about 50 GPa or more, about 55 GPa or more, about 60 GPa or more, or more. In further embodiments, the deposited dielectric film can be characterized by a hardness of about 4 GPa or more, and can also be characterized by a hardness of about 4.5 GPa or more, about 5.0 GPa or more, about 5.5 GPa or more, about 6.0 GPa or more, about 6.5 GPa or more, or more. These and other embodiments of this technology provide a method for forming as-deposited dielectric films from silicon-containing plasma effluent with harnesses that have a high carbon content, low dielectric constant, high Young's modulus, and can be manufactured with increasing carbon content, making them suitable for required applications such as hybrid packaging of semiconductor devices. Furthermore, this technology has the potential to produce materials that are less susceptible to oxygen penetration and oxidation.

[0050]

[0052] The above description includes many details for illustrative purposes in order to provide an understanding of the various embodiments of the Technology. However, it will be obvious to those skilled in the art that certain embodiments may be carried out without some of these details, or with additional details.

[0051]

[0053] While several embodiments have been disclosed, those skilled in the art will understand that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. In addition, some well-known processes and elements have not been described in order to avoid unnecessarily obscuring the Art. Therefore, the descriptions in the prior specification should not be considered to limit the scope of the Art.

[0052]

[0054] Where a range of values ​​is provided, unless explicitly stated otherwise in the context, each intermediary value between the upper and lower limits of that range is, of course, specifically disclosed down to the smallest unit of the lower limit. Narrower ranges between any two listed values ​​or between unlisted intermediary values ​​within a given range, and other listed or intermediary values ​​within such ranges, are included. The upper and lower limits of such narrower ranges may be included in or excluded from that range individually. Each range in which one, neither, or both of the limits are included is also included in the Art, although there may be limits that are specifically excluded within the given range. Where one or both of the limits are included in a given range, the range excluding one or both of the included limits is also included.

[0053]

[0055] As used herein and in the claims, the singular forms “a,” “an,” and “the” include multiple references unless the context clearly indicates otherwise. For example, “a material” includes multiple such materials, and “the precursor” includes one or more precursors and their equivalents known to those skilled in the art, and so on.

[0054]

[0056] Furthermore, the terms “comprise(s),” “comprising,” “contain(s),” “containing,” “include(s),” and “including,” as used herein and in the claims, are intended to identify the presence of the described features, integers, components, or steps, but not to exclude the presence or addition of one or more other features, integers, components, processes, operations, or groups.

Claims

1. A semiconductor processing method, To provide silicon-containing precursors and nitrogen-containing precursors to a processing area of ​​a semiconductor processing chamber, in which a substrate is placed inside the processing area, To provide an inert precursor to the processing region of the semiconductor processing chamber, To generate plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor, Depositing the silicon-containing material onto the substrate and A semiconductor processing method including [specific components].

2. The semiconductor processing method according to claim 1, wherein the silicon-containing precursor comprises trimethylsilane (TMS).

3. The nitrogen-containing precursor is ammonia (NH ３ The semiconductor processing method according to claim 1, including ).

4. The semiconductor processing method according to claim 1, wherein the inert precursor contains argon.

5. The semiconductor processing method according to claim 1, wherein the flow rate ratio of the inert precursor to the silicon-containing precursor is about 3:1 or more.

6. The semiconductor processing method according to claim 1, wherein the plasma effluent of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor is generated with a plasma power of approximately 250 W or more.

7. The semiconductor processing method according to claim 1, wherein the silicon-containing material is characterized by a carbon content of about 20 at.% or more.

8. The semiconductor processing method according to claim 1, further comprising depositing the silicon-containing material and then performing a post-deposit plasma treatment on the silicon-containing material.

9. The semiconductor processing method according to claim 8, further comprising stopping the flow of the silicon-containing precursor before performing the post-deposition plasma treatment on the silicon-containing material.

10. The semiconductor processing method according to claim 8, further comprising bonding the silicon-containing material on the substrate to an exposed silicon-carbon-containing material on a second substrate.

11. A semiconductor processing method, A silicon-containing precursor, a nitrogen-containing precursor, and argon are provided to a processing area of ​​a semiconductor processing chamber, in which a substrate is placed. To generate the silicon-containing precursor, the nitrogen-containing precursor, and the argon plasma effluent, The method involves depositing a silicon-containing material on the substrate, wherein the silicon-containing material is deposited at a rate of approximately 5,000 Å / min or less. A semiconductor processing method including [specific components].

12. The semiconductor processing method according to claim 11, wherein the flow rate of the argon is approximately 1,000 sccm or more.

13. The semiconductor processing method according to claim 11, wherein the temperature inside the semiconductor processing chamber is maintained at approximately 300°C or lower.

14. The semiconductor processing method according to claim 11, wherein the pressure inside the semiconductor processing chamber is maintained at approximately 10 Torr or less.

15. The semiconductor processing method according to claim 11, wherein the silicon-containing material is characterized by an oxygen content of about 2.0 at.% or less.

16. The semiconductor processing method according to claim 15, wherein the oxygen content in the silicon-containing material does not increase by more than approximately 3.0 at.% after the aging period.

17. The semiconductor processing method according to claim 11, wherein the silicon-containing material is characterized by a Young's modulus of about 30 GPa or more, a hardness of about 5 GPa or more, or both.

18. A semiconductor processing method, Providing a silicon-containing precursor and a nitrogen-containing precursor to a processing area of ​​a semiconductor processing chamber, wherein a substrate is placed inside the processing area, wherein the silicon-containing precursor, the nitrogen-containing precursor, or both contain carbon, is provided to the processing area of ​​the semiconductor chamber. To provide an inert precursor to the processing region of the semiconductor processing chamber, To generate plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor, The method involves depositing the silicon-containing material onto the substrate, wherein the silicon-containing material is characterized by a carbon content of approximately 20 at.% or more, and depositing the silicon-containing material onto the substrate. To stop the flow of the silicon-containing precursor, Plasma treatment is performed on the silicon-containing material after deposition. A semiconductor processing method including [specific components].

19. The semiconductor processing method according to claim 18, wherein the post-deposition plasma treatment reduces the carbon content of the exposed surface of the silicon-containing material.

20. The semiconductor processing method according to claim 18, wherein the plasma power during the post-deposition plasma processing is maintained at approximately 1,500 W or less.

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