Conductive polymers for reticle table cleaning equipment

Abstract

A cleaning device for clamps in a lithography apparatus includes a substrate having a front surface and a back surface opposite to the front surface, and a conductive layer provided on the front surface of the substrate. The conductive layer is configured to contact the clamp to dissipate the charge on the clamp and remove particles on the clamp via an electrostatic field generated between the conductive layer and the clamp. The conductive layer may include a conductive polymer. The conductive polymer may have a conductivity of at least about 1 S / cm. The conductivity of the conductive polymer is variable and can be adjusted to a desired value. The conductive polymer may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, combinations thereof, or derivatives thereof (e.g., polymer blends, copolymers, graft polymers, surface modifiers, surface treatment agents, additives, and / or fillers).

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the priority of U.S. Application No. 63 / 458,198, filed on April 10, 2023, the entire disclosure of which is incorporated herein by reference. [Technical Field] This disclosure relates to reticle table cleaning (RTC) apparatuses, systems, and methods, for example, charge dissipation and particle removal RTC apparatuses for lithography apparatuses and systems.

Background Art

[0002] A lithography apparatus is a machine constructed to form a desired pattern on a substrate. A lithography apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithography apparatus can project the pattern of a patterning device (e.g., a mask, a reticle) onto a layer of radiation - sensitive material (resist) provided on a substrate.

[0003] To project a pattern onto a substrate, a lithography apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of the features that can be formed on the substrate. A lithography apparatus using extreme ultraviolet (EUV) radiation having a wavelength in the range of 4 - 20 nm, for example 6.7 nm or 13.5 nm, can be used to form smaller features on a substrate than a lithography apparatus using deep ultraviolet (DUV) radiation having a wavelength of, for example, 157 nm, 193 nm, or 248 nm.

[0004] The reticle stage used to hold patterning devices in a lithography system can become contaminated over time (e.g., due to particle accumulation). Contaminants can transfer from the reticle stage to the patterning devices, for example, by the electrostatic clamps that hold the patterning devices during patterning. These contaminants can accumulate on the patterning devices, potentially causing patterning errors and defects. While a contaminated reticle stage can be cleaned manually, manual cleaning may leave residual particulate matter. Furthermore, manual cleaning requires exposing the lithography system to atmospheric pressure and partially disassembling it, reducing overall yield.

[0005] Current RTC devices use insulating top coatings that can accumulate charge over multiple cycles (e.g., trapping of charge carriers in the insulating coating). Under vacuum, RTC devices can eventually stick to the reticle stage due to parasitic charges between opposing insulating contact surfaces. When parasitic charges develop, the lithography apparatus must be opened to atmospheric pressure and partially disassembled to manually separate the RTC device from the reticle stage. One way to dissipate the charge between the reticle stage (e.g., an electrostatic clamp) and the RTC device is to use separate conductive devices placed between each load of the RTC device. However, this process requires two devices, thus reducing scanning capability and the overall efficiency of the lithography apparatus. [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] Therefore, there is a need to use a single conductive RTC device to dissipate charge on the reticle stage, remove particles from the reticle stage, and improve the efficiency, scanning capability, and overall yield of the lithography system. [Means for solving the problem]

[0007] In some embodiments, a reticle cleaning device for a reticle stage clamp in a lithography apparatus may include a substrate having a front surface and a back surface opposite to the front surface. In some embodiments, the reticle stage cleaning device may include a conductive layer provided on the front surface of the substrate. In some embodiments, the conductive layer is configured to contact the clamp and dissipate charge on the clamp. In some embodiments, the conductive layer is configured to remove particles on the clamp via an electrostatic field generated between the conductive layer and the clamp.

[0008] In some embodiments, the conductivity of the conductive layer can be at least about 1 S / cm. In some embodiments, the conductivity of the conductive layer can be greater than about 1 S / cm. In some embodiments, the conductivity of the conductive layer can be at least about 2 S / cm. In some embodiments, the conductivity of the conductive layer can be at least about 5 S / cm. In some embodiments, the conductivity of the conductive layer can be at least about 10 S / cm. In some embodiments, the conductivity of the conductive layer can be at least about 100 S / cm. In some embodiments, the conductivity of the conductive layer can be at least about 200 S / cm.

[0009] In some embodiments, the conductivity of the conductive layer can be in the range of about 1 S / cm to about 600 S / cm. In some embodiments, the conductivity of the conductive layer can be in the range of about 10 S / cm to about 600 S / cm. In some embodiments, the conductivity of the conductive layer can be in the range of about 100 S / cm to about 600 S / cm. In some embodiments, the conductivity of the conductive layer can be in the range of about 100 S / cm to about 1000 S / cm.

[0010] In some embodiments, the conductivity of the conductive layer can be made variable and configured to be adjusted to a desired value.

[0011] In some embodiments, the conductive layer may include a conductive polymer. In some embodiments, the conductive polymer may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or a combination thereof. In some embodiments, the combination of polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), and / or trans-polyacetylene may include polymer blends, copolymers, and / or graft polymers.

[0012] In some embodiments, the conductive polymer may contain additives. In some embodiments, the additives may be configured to modify the conductivity of the conductive polymer. In some embodiments, the additives may be configured to modify the mechanical properties of the conductive polymer. In some embodiments, the additives may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, acid scavengers, pigments, antistatic agents, nucleating agents, tribological compounds, slip compounds, or combinations thereof.

[0013] In some embodiments, the conductive polymer may include fillers. In some embodiments, the fillers may be configured to modify the conductivity of the conductive polymer. In some embodiments, the fillers may be configured to modify the mechanical properties of the conductive polymer. In some embodiments, the fillers may include organic materials, inorganic materials, polymer materials, metallic materials, ceramic materials, or combinations thereof. In some embodiments, the fillers may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, wood, fibers, glass fibers, carbon fibers, minerals, calcium carbonate, clay, pottery clay, titanium dioxide, talc, wollastonite, glass, mica, aluminum trihydrate, nanofillers, or combinations thereof.

[0014] In some embodiments, the conductive polymer may include a single layer. In some embodiments, the conductive polymer may include multiple layers. In some embodiments, the conductive polymer may undergo surface treatment (e.g., surface roughening, surface polishing, plasma treatment, acid treatment, etc.). In some embodiments, the conductive polymer may undergo surface modification (e.g., graft polymerization, corona treatment, etc.).

[0015] In some embodiments, the reticle stage cleaning apparatus may further include a second conductive layer provided between the conductive layer and the substrate. In some embodiments, the rigidity of the conductive layer may be lower than that of the second conductive layer. In some embodiments, the conductivity of the second conductive layer may be in the range of about 50 S / cm to about 850 S / cm. In some embodiments, the second conductive layer may include chromium nitride, titanium nitride, or carbon nitride. In some embodiments, the conductivity of the conductive layer may be variable and configured to compensate for the conductivity of the second conductive layer so that the total conductivity of the apparatus can be adjusted to a desired value.

[0016] In some embodiments, the lithography apparatus may include a reticle stage cleaning apparatus. In some embodiments, the measuring apparatus may include a reticle stage cleaning apparatus.

[0017] In some embodiments, the lithography apparatus may include an illumination system configured to illuminate a patterning device. In some embodiments, the lithography apparatus may include a projection system configured to project an image of the patterning device onto a patterning substrate. In some embodiments, the lithography apparatus may include a reticle stage configured to support the patterning device. In some embodiments, the reticle stage may include a chuck and an electrostatic clamp. In some embodiments, the electrostatic clamp may include a plurality of burrs. In some embodiments, the lithography apparatus may include a reticle stage cleaning device configured to dissipate charge on the electrostatic clamp and remove particles on the electrostatic clamp. In some embodiments, the reticle stage cleaning device may include a substrate having a front surface and a back surface opposite to the front surface. In some embodiments, the reticle stage cleaning device may include a conductive layer provided on the front surface of the substrate. In some embodiments, the conductive layer may be configured to contact the plurality of burrs of the electrostatic clamp. In some embodiments, the conductive layer may be configured to remove particles on the electrostatic clamp via an electrostatic field generated between the conductive layer and the electrostatic clamp.

[0018] In some embodiments, the conductivity of the conductive layer can be at least about 1 S / cm. In some embodiments, the conductivity of the conductive layer can be at least about 10 S / cm. In some embodiments, the conductivity of the conductive layer can be in the range of about 10 S / cm to about 600 S / cm. In some embodiments, the conductivity of the conductive layer can be in the range of about 10 S / cm to about 1000 S / cm.

[0019] In some embodiments, the conductive layer may include a conductive polymer. In some embodiments, the conductive polymer may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or a combination thereof. In some embodiments, the conductive polymer may be polyaniline. In some embodiments, the conductive polymer may be poly(p-phenylene). In some embodiments, the conductive polymer may be polythiophene. In some embodiments, the conductive polymer may be polypyrrole. In some embodiments, the conductive polymer may be poly(p-phenylene vinylene). In some embodiments, the conductive polymer may be trans-polyacetylene.

[0020] In some embodiments, a method for forming a reticle stage cleaning apparatus for removing particles on the reticle stage in a lithography apparatus may include forming a conductive polymer having an conductivity of at least about 1 S / cm on the front surface of a substrate. In some embodiments, the conductivity may be at least about 10 S / cm. In some embodiments, the conductivity may be in the range of about 10 S / cm to about 600 S / cm. In some embodiments, the conductive polymer may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or a combination thereof.

[0021] In some embodiments, forming a conductive polymer may involve adjusting the conductivity of the conductive polymer to a desired value. In some embodiments, adjusting the conductivity may involve using polymerization. In some embodiments, adjusting the conductivity may involve including additives in the conductive polymer. In some embodiments, adjusting the conductivity may involve including fillers in the conductive polymer.

[0022] In some embodiments, forming a conductive polymer may involve spin coating, slit coating, dip coating, spray coating, electrospinning, vapor deposition, gravure coating, or a combination thereof. In some embodiments, forming a conductive polymer may involve forming multiple layers.

[0023] In some embodiments, the method may further include forming a conductive layer between the conductive polymer and the substrate. In some embodiments, forming the conductive polymer may include adjusting the conductivity of the conductive polymer based on the conductivity of the conductive layer so that the total conductivity of the reticle stage cleaning apparatus is adjusted to a desired value. In some embodiments, the stiffness of the conductive polymer may be lower than the stiffness of the conductive layer.

[0024] In some embodiments, forming a conductive polymer may involve adjusting the mechanical properties of the conductive polymer (e.g., stiffness, Young's modulus, elastic modulus, elastic modulus, adhesion, density, glass transition temperature, etc.) to desired values. In some embodiments, adjusting the mechanical properties may involve using polymerization. In some embodiments, adjusting the mechanical properties may involve including additives in the conductive polymer. In some embodiments, adjusting the mechanical properties may involve including fillers in the conductive polymer.

[0025] In some embodiments, the method can further include contacting a reticle stage cleaning device with a plurality of bars of an electrostatic chuck of the reticle stage. In some embodiments, the method can further include generating an electrostatic field between the reticle stage cleaning device and the electrostatic chuck. In some embodiments, the method can further include removing particles on the electrostatic chuck. In some embodiments, the method can further include repeating the contacting step, the generating step, and the removing step to effect further removal of particles from the electrostatic chuck to the reticle stage cleaning device.

[0026] Any implementation of the technologies described above may include an EUV light source, a DUV light source, a system, a method, a process, a device, and / or an apparatus. Details of one or more implementations are set forth in the accompanying drawings and the description below. Other features will be apparent from the specification, drawings, and claims.

[0027] Further features and typical embodiments of the embodiments, as well as the structure and operation of various embodiments, are described in detail below with reference to the accompanying drawings. Note that the embodiments are not limited to the specific embodiments described in this document. Such embodiments are presented in this document for illustrative purposes only. Additional embodiments will be apparent to those skilled in the relevant art based on the teachings contained in this document.

Brief Description of the Drawings

[0028] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments and, together with the description, serve to explain the principles of the embodiments and further enable those skilled in the relevant art to make and use the embodiments.

[0029] [Figure 1] Schematic diagram of a lithography apparatus according to a typical embodiment.

[0030] [Figure 2]This is a schematic perspective view of a reticle stage and reticle in a typical embodiment.

[0031] [Figure 3] Figure 2 shows a schematic cross-sectional view of the reticle stage and reticle.

[0032] [Figure 4] This is a schematic perspective view of an RTC device according to a typical embodiment.

[0033] [Figure 5] Figure 4 is a schematic cross-sectional view of the RTC device shown.

[0034] [Figure 6A] Figures 4 and 5 are schematic diagrams of the two-dimensional chemical structures of different conductive polymers in the RTC device. [Figure 6B] Figures 4 and 5 are schematic diagrams of the two-dimensional chemical structures of different conductive polymers in the RTC device. [Figure 6C] Figures 4 and 5 are schematic diagrams of the two-dimensional chemical structures of different conductive polymers in the RTC device. [Figure 6D] Figures 4 and 5 are schematic diagrams of the two-dimensional chemical structures of different conductive polymers in the RTC device. [Figure 6E] Figures 4 and 5 are schematic diagrams of the two-dimensional chemical structures of different conductive polymers in the RTC device. [Figure 6F] Figures 4 and 5 are schematic diagrams of the two-dimensional chemical structures of different conductive polymers in the RTC device.

[0035] [Figure 7A] This shows a typical process cycle for removing particles from the reticle stage to the RTC device. [Figure 7B] This shows a typical process cycle for removing particles from the reticle stage to the RTC device. [Figure 7C]This shows a typical process cycle for removing particles from the reticle stage to the RTC device.

[0036] [Figure 8] This is a schematic perspective view of an RTC device having a conductive layer with multiple layers, according to a typical embodiment.

[0037] [Figure 9] Figure 8 is a schematic cross-sectional view of the RTC device shown.

[0038] [Figure 10] This is a schematic perspective view of an RTC device having a second conductive layer according to a typical embodiment.

[0039] [Figure 11] Figure 10 is a schematic cross-sectional view of the RTC device shown.

[0040] [Figure 12] This is a schematic perspective view of a typical RTC device that has two conductive properties but lacks a substrate.

[0041] [Figure 13] Figure 12 is a schematic cross-sectional view of the RTC device shown.

[0042] [Figure 14] This shows a manufacturing flowchart for producing an RTC device according to a typical embodiment.

[0043] [Figure 15] A cleaning flowchart for removing particles from the reticle stage to the RTC device, relating to a typical embodiment, is shown.

[0044] The characteristics and typical embodiments will become clearer when the following detailed description is read in conjunction with the drawings. In the drawings, the same reference numeral indicates a corresponding element. In the drawings, the same reference numeral generally indicates the same element, a functionally similar element, and / or a structurally similar element. Also, generally, the leftmost number of a reference numeral indicates the drawing in which that reference numeral first appears. Unless otherwise specified, the drawings provided throughout this disclosure should not be interpreted as to scale. [Modes for carrying out the invention]

[0045] This specification discloses one or more embodiments incorporating features of the present invention. The disclosed embodiments are merely illustrative of the present invention. The scope of the present invention is not limited to the disclosed embodiments. The present invention is defined by the claims appended herein.

[0046] The embodiments described, and references in this specification such as “one embodiment,” “a certain embodiment,” “an exemplary embodiment,” and “a typical embodiment,” indicate that the embodiments described may include certain features, structures, or characteristics, but not all embodiments necessarily include certain features, structures, or characteristics. Furthermore, these expressions do not necessarily refer to the same embodiment. Moreover, if certain features, structures, or characteristics are described in relation to an embodiment, whether explicitly stated or not, it will be understood that realizing such features, structures, or characteristics in relation to other embodiments is within the scope of the knowledge of those skilled in the art.

[0047] In this book, spatially relative terms such as "down," "below," "underside," "up," "above," and "upperside" may be used to describe the relationship between one element or feature and another, as shown in the drawings, and to facilitate explanation. These spatially relative terms are intended to encompass different orientations of the device during use or operation, in addition to the orientation shown in the drawings. The device may be in different orientations (90-degree rotation or other orientations), and the spatially relative descriptions used in this book may be interpreted accordingly.

[0048] The terms “approximately,” “substantially,” or “roughly” used in this book refer to a value of a given quantity that can vary based on a particular technique. Based on a particular technique, the terms “approximately,” “substantially,” or “roughly” can refer to a value that varies within a range of 10 to 30% (e.g., ±10%, ±20%, or ±30%) of the value of a given quantity.

[0049] Aspects of this disclosure can be implemented in hardware, firmware, software, or any combination thereof. Aspects of this disclosure may also be implemented as instructions stored in a machine-readable medium that can be read and executed by one or more processors. The machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, the machine-readable medium may include read-only memory (ROM), random access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, and propagating signals in electrical, optical, acoustic, or other forms (e.g., carrier waves, infrared signals, digital signals, etc.). Furthermore, firmware, software, routines, and / or instructions may be described in this document as performing specific operations. However, such descriptions are for convenience only, and it should be understood that in practice, such operations are brought about by the execution of firmware, software, routines, instructions, etc. by a computing device, processor, controller, or other device.

[0050] However, before describing such embodiments in more detail, it is useful to show examples of environments in which embodiments of this disclosure may be implemented.

[0051] Typical lithography system

[0052] Figure 1 shows a lithography system comprising a radiation source SO and a lithography apparatus LA. The radiation source SO is configured to generate an EUV and / or DUV radiation beam B and to supply the EUV and / or DUV radiation beam B to the lithography apparatus LA. The lithography apparatus LA comprises an illumination system IL, a support structure MT (e.g., mask table, reticle table, reticle stage) configured to support a patterning device MA (e.g., mask, reticle), a projection system PS, and a substrate table WT configured to support a substrate W.

[0053] The illumination system IL is configured to adjust the EUV and / or DUV radiation beam B before it is incident on the patterning device MA. The illumination system IL may include a faceted field mirror device 10 and a faceted pupil mirror device 11. Together, the faceted field mirror device 10 and the faceted pupil mirror device 11 provide the EUV and / or DUV radiation beam B with a desired cross-sectional shape and a desired intensity distribution. The illumination system IL may include other mirrors or devices in addition to or instead of the faceted field mirror device 10 and the faceted pupil mirror device 11.

[0054] After being adjusted in this manner, the EUV and / or DUV radiating beam B interacts with the patterning device MA. This interaction may be reflective (as shown in the figure), which is preferred for EUV radiation. This interaction may also be transmissive, which is preferred for DUV radiation. As a result of this interaction, a patterned EUV and / or DUV radiating beam B' is produced. The projection system PS is configured to project the patterned EUV and / or DUV radiating beam B' onto the substrate W. For this purpose, the projection system PS may include a number of mirrors 13, 14 configured to project the patterned EUV and / or DUV radiating beam B' onto the substrate W held by the substrate table WT. The projection system PS may apply a reduction factor to the patterned EUV and / or DUV radiating beam B' to form an image with features smaller than the corresponding features on the patterning device MA. For example, a reduction factor of 4 or 8 may be applied. Although Figure 1 shows the projection system PS having only two mirrors 13 and 14, the projection system PS may include a different number of mirrors (e.g., six or eight mirrors).

[0055] The substrate W may already contain a pattern. In this case, the lithography apparatus LA aligns the image formed by the patterned EUV and / or DUV radiation beam B' with the pattern already formed on the substrate W.

[0056] Typical reticle stage and reticle apparatus

[0057] As described above, the reticle stage (e.g., support structure MT) used to hold the patterning device (e.g., patterning device MA) in a lithography apparatus (e.g., lithography apparatus LA) can become contaminated (e.g., accumulate particles) over time. Contaminants can be transferred from the reticle stage to the patterning device, for example, by the electrostatic clamps that hold the patterning device during patterning.

[0058] Figures 2 and 3 show reticle stage 200 and reticle 300 according to various embodiments. Figure 2 is a schematic diagram of reticle stage 200 and reticle 300 according to a typical embodiment. Figure 3 is a schematic cross-sectional view of the reticle stage 200 and reticle 300 shown in Figure 2.

[0059] Figures 2 and 3 show reticle stage 200 in various typical embodiments. Reticle stage 200 can be configured to support a patterning device (e.g., reticle 300). Reticle stage 200 can further be configured to support a cleaning device (e.g., RTC devices 400, 400', 400'', 400'''' shown in Figures 4 to 13). Although reticle stage 200 is shown as a standalone device and / or system in Figures 2 and 3, embodiments of this disclosure can be used with, but are not limited to, other devices and / or systems such as lithography device LA, support structure MT, patterning device MA, reticle 300, and / or RTC devices 400, 400', 400'', 400''''.

[0060] As shown in Figures 2 and 3, the reticle stage 200 may include a clamp chuck 202 and an electrostatic clamp 204. The clamp chuck 202 may be configured to support the electrostatic clamp 204 (for example, by negative pressure). The electrostatic clamp 204 may be configured to electrostatically support a patterning device (e.g., reticle 300) and / or a cleaning device (e.g., RTC device 400, 400', 400'', 400'''). For example, by applying a voltage to the electrostatic clamp 204, an electrostatic field can be generated between the object (e.g., reticle 300, RTC device 400, 400', 400'', 400''') and the electrostatic clamp 204, thereby holding the object.

[0061] As shown in Figures 2 and 3, the electrostatic clamp 204 may include a clamp electrode 206 (e.g., embedded) and a crowbar 208 (e.g., an external projection or bump). In some embodiments, the clamp electrode 206 may be embedded in the electrostatic clamp 204 and aligned (e.g., vertically) with the crowbar 208. The clamp electrode 206 may be configured to generate an electrostatic field between the crowbar 208 and / or an object (e.g., a reticle 300, an RTC device 400, 400', 400'', 400''''). The crowbar 208 may be configured to physically contact the object (e.g., a reticle 300, an RTC device 400, 400', 400'', 400'''') to clamp and hold the object (e.g., electrostatically).

[0062] As shown in Figure 2, in some embodiments, the electrostatic clamp 204 may contain various particles or contaminants on its outer surface (e.g., the contact surface). For example, a first particle 210 may be present between the pallets 208, and a second particle 212 may be present on the pallets 208. The contaminants (e.g., the first particle 210, the second particle 212) may accumulate on the electrostatic clamp 204, potentially causing patterning errors and / or defects. For example, the contaminants (e.g., the first particle 210, the second particle 212) may transfer to the object (e.g., the reticle 300, the RTC device 400, 400', 400'', 400'''') while the object is electrostatically clamped.

[0063] In some embodiments, the electrostatic clamp 204 can be configured to apply a voltage to an object (e.g., a reticle 300, RTC device 400, 400', 400'', 400'''') relative to the reticle stage 200 (e.g., the bar 208 of the electrostatic clamp 204). For example, the clamp electrode 206 can generate an electrostatic field between the reticle stage 200 and the object by applying a voltage difference V (e.g., due to an applied negative voltage (-Y) or positive voltage (+Y)) between the reticle stage 200 and the object. The generated electrostatic field generates electrostatic forces (e.g., Lorentz force) and / or van der Waals forces on the contaminants (e.g., first particle 210, second particle 212, etc.), causing the contaminants to move from the reticle stage 200 (e.g., the electrostatic clamp 204) to the object.

[0064] Figures 2 and 3 show reticle 300 in various typical embodiments. Reticle 300 can be configured to generate a patterned radiation beam (e.g., a patterned EUV and / or DUV radiation beam B'). Although reticle 300 is shown as a standalone apparatus and / or system in Figures 2 and 3, embodiments of this disclosure can be used with other apparatus and / or systems such as a lithography apparatus LA, a support structure MT, a reticle stage 200, and / or a patterning device MA, but are not limited thereto.

[0065] As shown in Figures 2 and 3, the reticle 300 may include a patterning device 302 (e.g., patterning device MA) and a back layer 304. The back layer 304 may be configured to contact the bar 208 of the electrostatic clamp 204, so that the reticle stage 200 can hold the reticle 300 (e.g., electrostatically) without damaging the patterning device 302. The back layer 304 may be located on the back surface of the patterning device 302. In some embodiments, the back layer 304 may include a polymer or a combination of polymers. For example, the back layer 304 may include polyimide, Viton®, polytetrafluoroethylene (PTFE), Teflon®, fluoropolymer, and / or other materials less rigid than the patterning device 302.

[0066] Typical reticle table cleaning (RTC) equipment

[0067] As described above, contaminants (e.g., first particle 210, second particle 212, etc.) can accumulate on the patterning device (e.g., reticle 300) and / or the patterning device support (e.g., reticle stage 200), potentially causing patterning errors and / or defects. While a contaminated reticle stage (e.g., reticle stage 200) can be cleaned manually, manual cleaning can leave residues of particulate matter, potentially generating new contaminants. Furthermore, manual cleaning requires exposing the lithography equipment (e.g., lithography equipment LA) to atmospheric pressure and partially disassembling it, thus reducing overall yield.

[0068] Current RTC devices use insulating top coatings that can accumulate charge over multiple cycles (e.g., trapping of charge carriers in the insulating coating). Under vacuum, RTC devices can eventually stick to the reticle stage due to parasitic charges between opposing insulating contact surfaces. When parasitic charges develop, the lithography apparatus must be opened to atmospheric pressure and partially disassembled to manually separate the RTC device from the reticle stage. One way to dissipate the charge between the reticle stage (e.g., an electrostatic clamp) and the RTC device is to use separate conductive devices placed between each load of the RTC device. However, this process requires two devices, thus reducing scanning capability and the overall efficiency of the lithography apparatus.

[0069] The embodiments of the RTC apparatus, systems, and methods described later can dissipate charge on the reticle stage, remove particles from the reticle stage, and improve the efficiency, scanning capability, and overall yield of the lithography apparatus.

[0070] Figures 4 and 5 show RTC devices 400 according to various typical embodiments. Figure 4 is a schematic perspective view of an RTC device 400 according to one typical embodiment. Figure 5 is a schematic cross-sectional view of the RTC device 400 shown in Figure 4 (along the plane indicated by the VV line in Figure 4). The RTC device 400 can be configured to clean the reticle stage 200 in a lithography apparatus (e.g., lithography apparatus LA). The RTC device 400 can further be configured to dissipate charges accumulated on the reticle stage 200 (e.g., charges accumulated on the electrostatic clamp 204). The RTC device 400 can further be configured to remove contaminants (e.g., first particles 210, second particles 212, etc.) on the reticle stage 200 (e.g., electrostatic clamp 204) via an electrostatic field generated between the RTC device 400 and the reticle stage 200. Although the RTC device 400 is shown as a standalone device and / or system in Figures 4 and 5, aspects of the present disclosure may, but are not limited to, use with other devices and / or systems such as a lithography apparatus LA, a support structure MT, a reticle stage 200, a patterning device MA, and / or a reticle 300. In some embodiments, the RTC device 400 may be part of a lithography apparatus, such as a lithography apparatus LA. In some embodiments, the RTC device 400 may be part of a measuring apparatus.

[0071] As shown in Figures 4 and 5, the RTC apparatus 400 may include a front surface 402, a back surface 404, a substrate 406, a first front layer 410, and / or a positioning device 430. The RTC apparatus 400 has a front surface 402 and a back surface 404 opposite to the front surface 402. The front surface 402 is configured to contact the reticle stage 200. For example, the front surface 402 can contact the bar 208 of the electrostatic clamp 204. In some embodiments, the substrate 406 can be placed between the first front layer 410 and the positioning device 430. In some embodiments, the substrate 406 can be an insulator. For example, the substrate 406 can be fused silica, quartz, silicon oxide, silicon, glass, ceramic, semiconductor, and / or a combination thereof.

[0072] The first front layer 410 can be configured to contact the reticle stage 200 (e.g., the bar 208 of the electrostatic clamp 204) to dissipate charge accumulated on the reticle stage 200. The first front layer 410 can further be configured to contact the reticle stage 200 (e.g., the bar 208 of the electrostatic clamp 204) to remove contaminants (e.g., first particles 210, second particles 212, etc.). The first front layer 410 can further be configured to increase the conductivity of the RTC device 400, thereby reducing charge accumulation on the reticle stage 200 (e.g., by dislodging charge from the reticle stage 200). The first front layer 410 can further be configured to increase the adhesion force of the RTC device 400 in contact with the reticle stage 200. The first front layer 410 can further be configured to reduce the rigidity of the RTC device 400 in contact with the reticle stage 200. The first front layer 410 can be provided on the front surface (for example, the front surface 402) of the substrate 406.

[0073] In some embodiments, the first front layer 410 can be conductive. For example, the first front layer 410 can have a conductivity of at least about 1 S / cm. In some embodiments, the first front layer 410 can have a conductivity of at least about 1 S / cm to reduce charge accumulation on the reticle stage 200 and / or RTC device 400. For example, the conductivity can be about 2 S / cm. In some embodiments, the first front layer 410 can have a conductivity of at least about 10 S / cm. For example, the conductivity can be about 20 S / cm. In some embodiments, the first front layer 410 can have a conductivity of at least about 100 S / cm. For example, the conductivity can be about 200 S / cm. In some embodiments, the first front layer 410 can have a conductivity of at least about 500 S / cm. For example, the conductivity can be about 600 S / cm. In some embodiments, the first front layer 410 can have a conductivity of at least about 1,000 S / cm. For example, the conductivity can be about 2,000 S / cm. In some embodiments, the first front layer 410 can have a conductivity of about 600 S / cm or less. In some embodiments, the first front layer 410 can have a conductivity of about 1,000 S / cm or less. In some embodiments, the first front layer 410 can have a conductivity of about 10,000 S / cm or less.

[0074] In some embodiments, the first front layer 410 can have a conductivity in the range of about 1 S / cm to about 600 S / cm in order to reduce charge accumulation on the reticle stage 200 and / or RTC device 400. In some embodiments, the first front layer 410 can have a conductivity in the range of about 10 S / cm to about 600 S / cm. In some embodiments, the first front layer 410 can have a conductivity in the range of about 100 S / cm to about 600 S / cm. In some embodiments, the first front layer 410 can have a conductivity in the range of about 100 S / cm to about 1,000 S / cm. In some embodiments, the first front layer 410 can have a conductivity in the range of about 100 S / cm to about 10,000 S / cm. In some embodiments, the first front layer 410 can have a conductivity in the range of about 100 S / cm to about 10,000 S / cm. In some embodiments, the first front layer 410 can have a variable (e.g., adjustable) conductivity. For example, the conductivity can be adjusted to a desired value, e.g., about 10 S / cm. In some embodiments, the first front layer 410 may include a conductive polymer.

[0075] Figures 6A to 6F are schematic diagrams of the two-dimensional chemical structures of different conductive polymers for the first front layer 410 of the RTC apparatus 400 shown in Figures 4 and 5. Figures 6A to 6F show repeating units of polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylenevinylene), and trans-polyacetylene, respectively, that can be used to form the first front layer 410. In some embodiments, the conductivity of the conductive polymer of the first front layer 410 can be within a range (e.g., variable) and can depend on the chemical formation process used (e.g., polymerization, spin coating, slit coating, dip coating, spray coating, electrospinning, vapor deposition, gravure coating, etc.), the additives added, and / or the fillers added, for example, as shown in Table I below.

[0076] [Table 1]

[0077] In some embodiments, as shown in Figures 6A to 6F, for example, the first front layer 410 may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or a combination thereof. In some embodiments, the combination of polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), and / or trans-polyacetylene may include polymer blends, copolymers, and / or graft polymers. In some embodiments, the first front layer 410 may include polyaniline. For example, as shown in Figure 6A, the first front layer 410 may be polyaniline and may have a conductivity of, for example, about 10 S / cm. In some embodiments, the first front layer 410 may include poly(p-phenylene). For example, as shown in Figure 6B, the first front layer 410 may be poly(p-phenylene) and may have a conductivity of, for example, about 200 S / cm. In some embodiments, the first front layer 410 may include polythiophene. For example, as shown in Figure 6C, the first front layer 410 may be polythiophene and have an conductivity of, for example, about 500 S / cm. In some embodiments, the first front layer 410 may include polypyrrole. For example, as shown in Figure 6D, the first front layer 410 may be polypyrrole and have an conductivity of, for example, about 600 S / cm. In some embodiments, the first front layer 410 may include poly-p-phenylene vinylene. For example, as shown in Figure 6E, the first front layer 410 may be poly-p-phenylene vinylene and have an conductivity of, for example, about 1,000 S / cm. In some embodiments, the first front layer 410 may include trans-polyacetylene. For example, as shown in Figure 6F, the first front layer 410 may be trans-polyacetylene and have an conductivity of, for example, about 2,000 S / cm. In some embodiments, the first front layer 410 may include one or more conductive polymers. For example, the first front layer 410 may include a combination of polyaniline and poly(p-phenylene), such as alternating layers within a polymer laminate.

[0078] In some embodiments, the first front layer 410 may include additives configured to modify the conductivity and / or mechanical properties of the first front layer 410 (e.g., stiffness, Young's modulus, elastic modulus, elastic coefficient, adhesion, density, glass transition temperature, etc.). Examples of additives include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, acid scavengers, pigments, antistatic agents, nucleating agents, tribological compounds, slip compounds, or combinations thereof. In some embodiments, the first front layer 410 may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or combinations thereof, along with additives. For example, the first front layer 410 may contain poly(p-phenylene) and a plasticizer (e.g., camphor, n-ethyl-p-toluenesulfonamide, n-butylbenzenesulfonamide, 2-nitrobiphenyl, etc.).

[0079] In some embodiments, the first front layer 410 may include fillers configured to alter the conductivity and / or mechanical properties of the first front layer 410 (e.g., stiffness, Young's modulus, elastic modulus, elastic coefficient, adhesion, density, glass transition temperature, etc.). For example, the fillers may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, wood, fibers, glass fibers, carbon fibers, minerals, calcium carbonate, clay, earthenware, titanium dioxide, talc, wollastonite, glass, mica, aluminum trihydrate, nanofillers, or combinations thereof. In some embodiments, the fillers may include organic materials, inorganic materials, polymer materials, metallic materials, ceramic materials, or combinations thereof. In some embodiments, the first front layer 410 may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or combinations thereof, along with fillers. For example, the first front layer 410 may include polypyrrole and earthenware (kaolin).

[0080] In some embodiments, the first front layer 410 may include a single layer. For example, as shown in Figures 4 and 5, the first front layer 410 may be a single layer (e.g., polyaniline). In some embodiments, the first front layer 410 may include multiple layers. For example, as shown in Figures 8 and 9, the first front layer 410' may consist of multiple layers 410a, 410b, and 410c (e.g., polyaniline, polythiophene, and polypyrrole, respectively).

[0081] In some embodiments, the rigidity of the first front layer 410 can be lower than that of the substrate 406. For example, the first front layer 410 can have a rigidity of about 50 N / m, and the substrate 406 can have a rigidity of about 1800 N / m. In some embodiments, the first front layer 410 can be substantially planar. For example, as shown in Figures 4 and 5, the first front layer 410 can be planar (e.g., of uniform thickness). In some embodiments, the first front layer 410 can have a thickness of about 8 microns or less in order to generate an electrostatic field between the first front layer 410 and the reticle stage 200.

[0082] In some embodiments, the RTC device 400 may further include a second front layer 412 provided between the first front layer 410 and the substrate 406. For example, as shown in Figures 10 and 11, the second front layer 412 may be conductive (e.g., a conductive metal, a conductive nitride, a conductive polymer, etc.) and may be placed beneath the first front layers 410, 410'. In some embodiments, the second front layer 412 may have a conductivity in the range of about 50 S / cm to about 850 S / cm. In some embodiments, the second front layer 412 may include chromium nitride, titanium nitride, carbon nitride, or other hard conductive materials. In some embodiments, the first front layer 410 may have a lower rigidity than the second front layer 412.

[0083] In some embodiments, the first front layer 410 may have a variable (e.g., adjustable) conductivity, and the first front layer 410 may have a conductivity configured to compensate for the conductivity of the second front layer 412, thereby allowing the total conductivity of the RTC device 400 to be adjusted to a desired value. For example, the second front layer 412 may have a conductivity of approximately 600 S / cm (G2), and the conductivity of the first front layer 410 (G1) may be adjusted to approximately 400 S / cm, thereby adjusting the total conductivity to a desired value (e.g., approximately 240 S / cm) (e.g., 1 / G Total=(1 / G1)+(1 / G2)). For example, the second front layer 412 can have a conductivity (G2) of about 600 S / cm, which can adjust the conductivity (G1) of the first front layer 410 to about 1800 S / cm, thereby adjusting the total conductivity to a desired value (e.g., about 450 S / cm).

[0084] The voltage source 420 can be configured to supply a voltage to the first front layer 410 relative to the reticle stage 200 (e.g., the bar 208 of the electrostatic clamp 204). For example, the voltage source 420 can be electrically coupled to the first front layer 410 and provide a voltage difference V (e.g., relative to an applied negative voltage (-V) or positive voltage (+V)) between the reticle stage 200 and the RTC device 400, so that an electrostatic field is generated between the reticle stage 200 and the RTC device 400. The generated electrostatic field generates electrostatic forces (e.g., Lorentz force) and / or van der Waals forces on contaminants (e.g., first particle 210, second particle 212), causing the contaminants to move from the reticle stage 200 (e.g., the electrostatic clamp 204) to the RTC device 400 (e.g., the first front layer 410).

[0085] In some embodiments, the voltage source 420 can be located inside the RTC device 400. For example, as shown in Figure 5, the voltage source 420 can be embedded in or placed within the substrate 406. In some embodiments, the voltage source 420 can be located outside the RTC device 400. In some embodiments, the voltage source 420 can be a battery-powered voltage source configured to supply a high voltage to the front panel 402 of the RTC device 400. In some embodiments, the voltage source 420 can supply a voltage of approximately 1kV to approximately 5kV.

[0086] In some embodiments, the RTC device 400 may omit the voltage source 420, and the first front layer 410 may function as a passive conductor (for example, the first front layer 410 may be grounded or maintained at 0V). For example, the clamp electrode 206 of the electrostatic clamp 204 may supply a voltage to the bar 208 relative to the first front layer 410 to generate an electrostatic field between the electrostatic clamp 204 and the first front layer 410.

[0087] The positioning device 430 can be configured to move the first front layer 410 relative to the reticle stage 200. For example, the positioning device 430 can move the first front layer 410 along the vertical direction (e.g., the Z-axis) toward the bar 208 of the electrostatic clamp 204. In some embodiments, the positioning device 430 can be a 6-axis moving stage with 6 degrees of freedom (e.g., X, Y, Z, yaw, pitch, roll). For example, the positioning device 430 can be configured to bring the RTC device 400 (e.g., the first front layer 410) into contact with a first surface area of ​​the reticle stage 200, move the RTC device 400 away from the first surface area, move the RTC device to a second surface area of ​​the reticle stage 200, and bring the RTC device (e.g., the first front layer 410) into contact with the second surface area of ​​the reticle stage 200. In some embodiments, the positioning device 430 can include one or more linear motors (e.g., servo motors). In some embodiments, the positioning device 430 can be located on the back surface 404 of the RTC device 400. For example, as shown in Figures 4 and 5, the substrate 406 can be mounted on the positioning device 430. In some embodiments, the positioning device 430 can be an interchangeable device for mounting one or more reticles (e.g., RTC devices 400) onto the electrostatic clamp 204.

[0088] Typical process cycle

[0089] Figures 7A to 7C show process cycle 700 for removing contaminants (e.g., first particles 210, second particles 212, etc.) from the reticle stage 200 to the RTC device 400, relating to various typical embodiments. Figure 7A is a schematic cross-sectional view of the reticle stage 200 and RTC device 400 in the initial step. Figure 7B is a schematic cross-sectional view of the reticle stage 200 and RTC device 400 in the contact step. Figure 7C is a schematic cross-sectional view of the reticle stage 200 and RTC device 400 in the retraction step.

[0090] As shown in Figure 7A, in the initial step, the RTC device 400 can approach the bar 208 of the electrostatic clamp 204 of the reticle stage 200 and move so that the bar 208 faces the first front layer 410 (e.g., conductive) in a direction substantially perpendicular to it. For example, a positioning device 430 can align the first front layer 410 with the bar 208 of the electrostatic clamp 204. Contaminants (e.g., first particles 210, second particles 212, etc.) are present on the outer surface of the electrostatic clamp 204.

[0091] As shown in Figure 7B, in the contact step, the RTC device 400 moves perpendicularly (e.g., along the +Z axis) toward the reticle stage 200 along the contact direction 702, and can physically contact the bar 208 of the electrostatic clamp 204. During the execution of the contact step, a voltage difference can be applied between the RTC device 400 and the reticle stage 200 (e.g., by applying a voltage to the clamp electrode 206 and / or the first front layer 410) to generate an electrostatic field between the RTC device 400 and the reticle stage 200. The generated electrostatic field generates an electrostatic force (e.g., Lorentz force) and / or van der Waals force on the contaminants (e.g., first particle 210, second particle 212, etc.), causing the contaminants to move from the reticle stage 200 to the RTC device 400. The contaminants (e.g., first particle 210, second particle 212, etc.) come into contact with the first front layer 410 and remain on the front 402. Furthermore, the charge accumulated on the electrostatic clamp 204 can be dissipated when the first front layer 410 (for example, a conductive polyimide containing radicals) comes into contact with the electrostatic clamp 204.

[0092] As shown in Figure 7C, in the retraction step, the RTC device 400 moves vertically (e.g., along the -Z axis) away from the reticle stage 200 along the retraction direction 704, allowing it to retract from the bar 208 of the electrostatic clamp 204. During the execution of the retraction step, the front surface 402 of the RTC device 400 can hold most or all of the contaminants (e.g., first particles 210, second particles 212, etc.) from the electrostatic clamp 204 onto the first front surface layer 410.

[0093] In some embodiments, the contact step shown in Figure 7B and the retraction step shown in Figure 7C can be repeated (e.g., multiple cycles) to further move (remove) contaminants (e.g., first particles 210, second particles 212, etc.) from the electrostatic clamp 204 to the RTC device 400. In some embodiments, the process cycle 700 may include bringing the reticle stage 200 into contact with a first surface area of ​​the RTC device 400, retracting the RTC device 400, moving the RTC device 400 (e.g., via a positioning device 430), and bringing the reticle stage 200 into contact with a second surface area of ​​the RTC device 400 that is different from the first surface area.

[0094] Typical alternative RTC device

[0095] Figures 8 to 13 show RTC devices 400', 400'', and 400''' according to various typical embodiments. Figure 8 is a schematic perspective view of an RTC device 400' according to one typical embodiment. Figure 9 is a schematic cross-sectional view of the RTC device 400' shown in Figure 8 (along the plane indicated by line IX-IX in Figure 8). Figure 10 is a schematic perspective view of a reticle stage 200 and RTC device 400'' according to one typical embodiment. Figure 11 is a schematic cross-sectional view of the reticle stage 200 and RTC device 400'' shown in Figure 10 (along the plane indicated by line XI-XI in Figure 10). Figure 12 is a schematic perspective view of a reticle stage 200 and RTC device 400''' according to one typical embodiment. Figure 13 is a schematic cross-sectional view of the reticle stage 200 and RTC device 400''' shown in Figure 12 (along the plane indicated by line XIII-XIII in Figure 12).

[0096] Figures 8 and 9 show RTC devices 400' according to a particular embodiment. For example, the embodiment of RTC device 400 shown in Figures 4 and 5 may be similar to the embodiment of RTC device 400' shown in Figures 8 and 9. Similar reference numerals are used to indicate features of the embodiment of RTC device 400 shown in Figures 4 and 5 and similar features of the embodiment of RTC device 400' shown in Figures 8 and 9. One difference between the embodiment of RTC device 400 shown in Figures 4 and 5 and the embodiment of RTC device 400' shown in Figures 7 and 8 is that RTC device 400' includes a first front layer 410' having multiple layers 410a, 410b, 410c, rather than the first front layer 410 (e.g., a single layer) shown in Figures 4 and 5. Although the RTC apparatus 400' is shown as a standalone apparatus and / or system in Figures 8 and 9, aspects of the present disclosure may be used with other apparatuses and / or systems such as the lithography apparatus LA, support structure MT, reticle stage 200, patterning device MA, and / or reticle 300, but are not limited to these.

[0097] As shown in Figures 8 and 9, the RTC apparatus 400' may include a first front layer 410' having a plurality of layers 410a, 410b, 410c. In some embodiments, the first front layer 410' may include two layers, for example, a plurality of layers 410a, 410b. In some embodiments, the first front layer 410' may include three or more layers, for example, a plurality of layers 410a, 410b, 410c. In some embodiments, the first front layer 410' may include alternately stacked conductive polymer layers, for example, a plurality of layers 410a, 410b (for example, polyaniline and polypyrrole, respectively). In some embodiments, the first front layer 410' may include additives and / or fillers, for example, a plurality of layers 410a, 410b, 410c (for example, polypyrrole, calcium carbonate, and trans-polyacetylene, respectively).

[0098] Figures 10 and 11 show an RTC device 400'' according to a particular embodiment. For example, the embodiment of the RTC device 400 shown in Figures 4 and 5 may be similar to the embodiment of the RTC device 400'' shown in Figures 10 and 11. Similar reference numerals are used to indicate features of the embodiment of the RTC device 400 shown in Figures 4 and 5 and similar features of the embodiment of the RTC device 400'' shown in Figures 10 and 11. One difference between the embodiment of the RTC device 400 shown in Figures 4 and 5 and the embodiment of the RTC device 400'' shown in Figures 10 and 11 is that the RTC device 400'' includes not only the first front layer 410 shown in Figures 4 and 5, but also a second front layer 412 provided between the substrate 406 and the first front layer 410. Although the RTC apparatus 400'' is shown as a standalone apparatus and / or system in Figures 10 and 11, aspects of the present disclosure may be used with other apparatuses and / or systems such as the lithography apparatus LA, support structure MT, reticle stage 200, patterning device MA, and / or reticle 300, but are not limited to these.

[0099] As shown in Figures 10 and 11, the RTC device 400'' may include a second front layer 412. The second front layer 412 may be configured to generate an electrostatic field between the reticle stage 200 and the RTC device 400''. The second front layer 412 may further be configured to generate an electrostatic field for removing contaminants (e.g., first particles 210, second particles 212, etc.) on the reticle stage 200 (e.g., electrostatic clamp 204). In some embodiments, as shown in Figure 11, the second front layer 412 may be electronically coupled to a voltage source 420 to supply voltage to the second front layer 412.

[0100] In some embodiments, the second front layer 412 can be conductive (e.g., conductive metal, conductive nitride, conductive polymer, etc.) and can be placed beneath the first front layers 410, 410'. In some embodiments, the second front layer 412 can have a conductivity in the range of about 50 S / cm to about 850 S / cm. For example, the second front layer 412 can have a conductivity in the range of about 200 S / cm to about 700 S / cm. In some embodiments, the second front layer 412 can include chromium nitride, titanium nitride, carbon nitride, or other hard conductive materials. For example, the second front layer 412 can be chromium nitride. In some embodiments, the first front layers 410, 410' can have a lower stiffness than the second front layer 412. For example, the first front layers 410, 410' can have a stiffness of about 100 N / m, and the second front layer 412 can have a stiffness of about 1500 N / m. In some embodiments, the second front layer 412 can be substantially planar. For example, as shown in Figures 10 and 11, the second front layer 412 can be planar (e.g., of uniform thickness). In some embodiments, the second front layer 412 can have a thickness of about 8 microns or less in order to generate an electrostatic field between the first front layers 410, 410' and the reticle stage 200.

[0101] Figures 12 and 13 show RTC device 400'''' according to a particular embodiment. For example, the embodiment of RTC device 400 shown in Figures 4 and 5 may be similar to the embodiment of RTC device 400''' shown in Figures 12 and 13. Similar reference numerals are used to indicate features of the embodiment of RTC device 400 shown in Figures 4 and 5 and similar features of the embodiment of RTC device 400''' shown in Figures 12 and 13. One difference between the embodiment of RTC device 400 shown in Figures 4 and 5 and the embodiment of RTC device 400''' shown in Figures 12 and 13 is that RTC device 400''' includes a first front layer 410'' having a first layer 410a and a second layer 410b, rather than the first front layer 410 and substrate 406 shown in Figures 4 and 5, and omits the substrate 406. Although the RTC apparatus 400''' is shown as a standalone apparatus and / or system in Figures 12 and 13, aspects of the present disclosure may be used with other apparatuses and / or systems such as the lithography apparatus LA, support structure MT, reticle stage 200, patterning device MA, and / or reticle 300, but are not limited to these.

[0102] As shown in Figures 12 and 13, the RTC device 400'' may include a first front layer 410'' having a first layer 410a and a second layer 410b. In some embodiments, the first front layer 410'' may include conductive polymer layers, for example, the first layer 410a and the second layer 410b may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or combinations thereof, such as polymer blends, copolymers, and / or graft polymers. In some embodiments, the first front layer 410'' may include different conductive polymer layers, for example, the first layer 410a and the second layer 410b (for example, polyaniline and polypyrrole, respectively). In some embodiments, the first front layer 410'' may include additives and / or fillers, for example, the first layer 410a and the second layer 410b (for example, polypyrrole and calcium carbonate, respectively). In some embodiments, the first front layer 410'' can be formed directly on the positioning device 430, for example, as shown in Figures 12 and 13 (for example, the substrate 406 can be omitted). In some embodiments, the first layer 410a and the second layer 410b may include conductive polymers (e.g., polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or combinations thereof), such as conductive polymers having conductivity equal to or greater than that of chromium nitride (CrN).

[0103] In some embodiments, the first layer 410a can be conductive and can be placed on top of the second layer 410b. In some embodiments, the first layer 410a can have a conductivity in the range of about 1 S / cm to about 600 S / cm. For example, the first layer 410a can have a conductivity in the range of about 10 S / cm to about 300 S / cm. In some embodiments, the second layer 410b can be conductive and can be placed below the first layer 410a. In some embodiments, the second layer 410b can have a conductivity in the range of about 50 S / cm to about 850 S / cm. For example, the second layer 410b can have a conductivity in the range of about 200 S / cm to about 700 S / cm. In some embodiments, the first layer 410a and the second layer 410b can have a combined conductivity in the range of about 50 S / cm to about 850 S / cm. For example, the first layer 410a and the second layer 410b can have a total conductivity in the range of approximately 200 S / cm to approximately 700 S / cm.

[0104] Typical manufacturing flowchart

[0105] Figure 14 shows a manufacturing flowchart 1400 for manufacturing RTC devices 400, 400', 400'', and 400''' according to a typical embodiment. It should be understood that not all steps in Figure 14 are necessary to carry out the disclosures provided herein. Furthermore, some steps may be performed simultaneously, sequentially, and / or in an order different from that shown in Figure 14. The manufacturing flowchart 1400 is illustrated with reference to Figures 4, 5, 6A–6F, and 8–11. However, the manufacturing flowchart 1400 is not limited to these exemplary embodiments.

[0106] In step 1402, as shown in the examples in Figures 4, 5 and 6A-6F, the first front layer 410 may contain a conductive polymer (e.g., polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene) and may be formed on the substrate 406. In some embodiments, the first front layer 410 may be formed using a polymerization method. In some embodiments, the first front layer 410 can be formed by spin coating (e.g., applying a conductive polymer to the substrate 406 and rotating it to achieve a uniform thickness), slit coating (e.g., pouring a conductive polymer onto the substrate 406 through a slit), dip coating (e.g., immersing the substrate 406 in a conductive polymer and pushing out the excess with a roller), spray coating (e.g., spraying a conductive polymer directly onto the substrate 406), electrospinning (e.g., directly spinning a conductive polymer onto the substrate 406), vapor deposition, gravure coating (e.g., directly printing a conductive polymer onto the substrate 406 using a rotary printing press), or a combination thereof. In some embodiments, as shown, for example in Figures 12 and 13, the first front layer 410 can be formed directly on the positioning device 430 (e.g., the substrate 406 can be omitted), and the above processes can be performed on the positioning device 430.

[0107] In some embodiments, the first front layer 410 can be formed by deposition. For example, the first front layer 410 can be formed or deposited by any suitable method, including chemical vapor deposition (CVD), plasma CVD (PECVD), low-pressure CVD (LPCVD), atomic layer deposition (ALD), pulsed laser deposition (PLD), electron beam physical vapor deposition (EBPVD), sputtering (e.g., RF, electron, potential, chemical), ion beam deposition, spin-on deposition, liquid source mist chemical deposition, and / or other suitable deposition methods. In some embodiments, forming the first front layer 410 may include forming multiple layers, for example, multiple layers 410a, 410b, 410c, as shown in Figures 8 and 9.

[0108] In step 1404, the conductivity of the first front layer 410 can optionally be adjusted to a desired value, as shown in the examples in Figures 4, 5 and 6A-6F. In some embodiments, step 1404 can be performed while step 1402 is being executed. In some embodiments, adjusting the conductivity of the first front layer 410 may involve polymerization. For example, repeating units of a conductive polymer (e.g., polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene) can be polymerized to form the first front layer 410 having a desired conductivity. In some embodiments, polymerization can be adjusted by adjusting temperature, pressure, duration, rate, length of repeating units, thickness, branching, copolymerization, stereoregularity, photocuring, steric hindrance, electronegativity, type of solvent, solubility, charge distribution, molecular stability, or a combination thereof.

[0109] In some embodiments, adjusting the conductivity of the first front layer 410 may include including additives in the first front layer 410. For example, additives may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, acid scavengers, pigments, antistatic agents, nucleating agents, tribological compounds, slip compounds, or combinations thereof, which can increase or decrease the conductivity of the first front layer 410.

[0110] In some embodiments, adjusting the conductivity of the first front layer 410 may include including a filler in the first front layer 410. For example, the filler may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, wood, fibers, glass fibers, carbon fibers, minerals, calcium carbonate, clay, earthenware, titanium dioxide, talc, wollastonite, glass, mica, aluminum trihydrate, nanofillers, or combinations thereof, which can increase or decrease the conductivity of the first front layer 410.

[0111] In step 1406, as shown in the examples in Figures 10 and 11, a second front layer 412 can optionally be formed between the substrate 406 and the first front layers 410, 410'. In some embodiments, the first front layers 410, 410' can be formed on the second front layer 412 after the second front layer 412 has been formed on the substrate 406. In some embodiments, the second front layer 412 can be formed by deposition. For example, the second front layer 412 can be formed or deposited by any suitable method, including CVD, PECVD, LPCVD, ALD, PLD, EBPVD, sputtering (e.g., RF, electron, electrochemical), ion beam deposition, spin-on deposition, liquid source mist chemical deposition, and / or other suitable deposition methods. In some embodiments, the second front layer 412 can be conductive (e.g., conductive metal, conductive nitride, conductive polymer, etc.) and can be placed beneath the first front layers 410, 410'. In some embodiments, the second front layer 412 can have an electrical conductivity in the range of about 50 S / cm to about 850 S / cm. For example, the second front layer 412 can have an electrical conductivity in the range of about 200 S / cm to about 700 S / cm. In some embodiments, the second front layer 412 can include chromium nitride, titanium nitride, carbon nitride, or other hard conductive materials. For example, the second front layer 412 can be chromium nitride.

[0112] In some embodiments, forming the first front layers 410, 410' may include adjusting the conductivity of the first front layers 410, 410' based on the conductivity of the second front layer 412, thereby adjusting the total conductivity of the RTC device 400'' to a desired value. For example, the second front layer 412 may have a conductivity of approximately 600 S / cm (G2), the conductivity of the first front layers 410, 410' may be adjusted to approximately 400 S / cm, and the total conductivity of the RTC device 400'' (e.g., in series, along the vertical direction) may be adjusted to a desired value of approximately 240 S / cm (e.g., 1 / G Total = (1 / G1) + (1 / G2)

[0113] Typical cleaning flowchart

[0114] Figure 15 shows a cleaning flowchart 1500 for removing contaminants (e.g., first particle 210, second particle 212, etc.) from the reticle stage 200 to the RTC devices 400, 400', 400'', 400''' in a typical embodiment. It should be understood that not all steps in Figure 15 are necessary to perform the disclosures provided herein. Furthermore, some steps may be performed simultaneously, sequentially, and / or in an order different from that shown in Figure 15. The cleaning flowchart 1500 is illustrated with reference to Figures 4-13. However, the cleaning flowchart 1500 is not limited to these exemplary embodiments.

[0115] In step 1502, RTC devices 400, 400', 400'', 400'''' for removing contaminants (e.g., first particle 210, second particle 212, etc.) from the reticle stage 200 can be formed, as shown in the examples in Figures 4 to 13. In some embodiments, the RTC devices 400, 400', 400'', 400'''' can be formed using the manufacturing flowchart 1400, as shown in Figure 14.

[0116] In step 1604, as shown in the example in Figure 7B, the RTC devices 400, 400', 400'', 400''' can contact the crowbars 208 of the electrostatic clamps 204 of the reticle stage 200. In some embodiments, the RTC reticles 400, 400', 400'', 400''' can physically contact the crowbars 208 of the electrostatic clamps 204 of the reticle stage 200 such that the crowbars 208 face the first front layer 410 (e.g., conductive) in a substantially perpendicular direction. For example, a positioning device 430 can align the first front layer 410 with the crowbars 208 of the electrostatic clamps 204.

[0117] In step 1506, as shown in the example in Figure 7B, one or more electrostatic fields can be generated between the RTC devices 400, 400', 400'', 400''' and the electrostatic clamps 204 of the reticle stage 200. In some embodiments, an electrostatic field can be generated between the RTC device 400 and the reticle stage 200 by applying a voltage difference V between the RTC device 400 and the reticle stage 200 (for example, by applying a voltage to the clamp electrodes 206, the first front layer 410, and / or the second front layer 412).

[0118] In step 1508, as shown in the example in Figure 7C, contaminants present on the electrostatic clamp 204 (e.g., first particle 210, second particle 212, etc.) can be removed (moved) from the reticle stage 200 to the RTC devices 400, 400', 400'', 400''''. In some embodiments, one or more generated electrostatic fields generate electrostatic forces (e.g., Lorentz forces) and / or van der Waals forces (e.g., van der Waals forces) on the contaminants (e.g., first particle 210, second particle 212, etc.), causing the contaminants to move from the reticle stage 200 to the RTC device 400. The contaminants (e.g., first particle 210, second particle 212, etc.) come into contact with the first front layer 410 (e.g., conductive) and remain on the front 402. Furthermore, any charge accumulated on the electrostatic clamp 204 can be dissipated when the first front layer 410 (e.g., conductive) comes into contact with the electrostatic clamp 204.

[0119] In step 1510, steps 1504, 1506, and 1508 can be repeated (for example, in multiple cycles) to further remove (move) contaminants (e.g., first particle 210, second particle 212, etc.) from the electrostatic clamp 204 to the RTC devices 400, 400', 400'', 400'''', as shown in the examples in Figures 7A to 7C.

[0120] Various embodiments of this system and method are disclosed by the following numbered list of clauses. (Item 1) A cleaning device for clamps in a lithography apparatus, A substrate having a front surface and a back surface opposite to the front surface, A conductive layer provided on the front surface of the substrate and configured to contact the clamp and dissipate charge on the clamp, comprising a conductive layer configured to remove particles on the clamp via an electrostatic field generated between the conductive layer and the clamp, Cleaning device. (Item 2) The conductivity of the conductive layer is at least about 1 S / cm. The cleaning device described in item 1. (Item 3) The conductivity of the conductive layer is at least about 10 S / cm. The cleaning device described in item 1. (Item 4) The conductivity of the conductive layer is at least about 100 S / cm. The cleaning device described in item 1. (Item 5) The conductivity of the conductive layer is in the range of approximately 1 S / cm to approximately 600 S / cm. The cleaning device described in item 1. (Item 6) The conductivity of the conductive layer is in the range of about 10 S / cm to about 600 S / cm. The cleaning device described in item 1. (Item 7) The conductivity of the conductive layer is in the range of approximately 100 S / cm to approximately 600 S / cm. The cleaning device described in item 1. (Clause 8) The conductivity of the conductive layer is variable and configured to be adjusted to a desired value. The cleaning device described in item 1. (Item 9) The conductive layer comprises a conductive polymer, The cleaning device described in item 1. (Item 10) The conductive polymer comprises polyaniline, poly(p)phenylene, polythiophene, polypyrrole, poly(p)phenylenevinylene, transpolyacetylene, or a combination thereof. The cleaning apparatus described in item 9. (Item 11) The conductive polymer comprises additives configured to modify the conductivity and / or mechanical properties of the conductive polymer. The cleaning apparatus described in item 9. (Item 12) The additive comprises carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, acid scavengers, pigments, antistatic agents, nucleating agents, tribological compounds, slip compounds, or combinations thereof. The cleaning device described in item 11. (Clause 13) The conductive polymer comprises a filler configured to modify the conductivity and / or mechanical properties of the conductive polymer. The cleaning apparatus described in item 9. (Item 14) The filler comprises an organic material, an inorganic material, a polymer material, a metallic material, a ceramic material, or a combination thereof. The cleaning apparatus described in item 13. (Item 15) The conductive polymer comprises a single layer, The cleaning apparatus described in item 9. (Item 16) The conductive polymer comprises a plurality of layers, The cleaning apparatus described in item 9. (Item 16) The conductive polymer comprises surface treatment and / or surface modification, The cleaning apparatus described in item 9. (Item 18) Further comprising a second conductive layer provided between the conductive layer and the substrate, The cleaning device described in item 1. (Item 19) The rigidity of the conductive layer is lower than that of the second conductive layer. The cleaning apparatus described in item 18. (Item 20) The conductivity of the second conductive layer is in the range of about 50 S / cm to about 850 S / cm. The cleaning apparatus described in item 18. (Item 21) The second conductive layer comprises chromium nitride, titanium nitride, or carbon nitride. The cleaning apparatus described in item 18. (Clause 22) The conductivity of the conductive layer is variable and is configured to compensate for the conductivity of the second conductive layer so that the total conductivity of the cleaning device is adjusted to a desired value. The cleaning apparatus described in item 18. (Item 23) The cleaning device is a reticle stage cleaning device, and the clamp is a reticle clamp. The cleaning device described in item 1. (Item 24) A lithography apparatus comprising the cleaning device described in any one of the above items. (Item 25) A measuring device comprising a cleaning device as described in any one of the above items. (Item 26) A lighting system configured to illuminate a patterning device, A projection system configured to project the image of the patterning device onto a patterning substrate, A reticle stage configured to support the patterning device, comprising a chuck and an electrostatic clamp having a plurality of crowbars, The reticle stage cleaning device comprises a device configured to dissipate the charge on the electrostatic clamp and remove particles on the electrostatic clamp, The reticle stage cleaning apparatus is A substrate having a front surface and a back surface opposite to the front surface, A conductive layer provided on the front surface of the substrate and configured to contact the plurality of bars of the electrostatic clamp, the conductive layer being configured to remove particles on the electrostatic clamp via an electrostatic field generated between the conductive layer and the electrostatic clamp, Lithography equipment. (Item 27) The conductive layer comprises a conductive polymer, Lithography apparatus as described in item 26. (Item 28) The conductive polymer comprises polyaniline, poly(p)phenylene, polythiophene, polypyrrole, poly(p)phenylenevinylene, transpolyacetylene, or a combination thereof. Lithography apparatus as described in item 27. (Item 29) A method for forming a reticle stage cleaning apparatus for removing particles on a reticle stage in a lithography apparatus, A method comprising forming a conductive polymer having an conductivity of at least about 1 S / cm on the front surface of a substrate. (Item 30) The conductivity is at least about 10 S / cm. The method described in item 29. (Item 32) The conductivity is in the range of about 10 S / cm to about 600 S / cm. The method described in item 29. (Item 32) The conductive polymer comprises polyaniline, poly(p)phenylene, polythiophene, polypyrrole, poly(p)phenylenevinylene, transpolyacetylene, or a combination thereof. The method described in item 29. (Item 33) A combination of polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), or trans-polyacetylene comprises a polymer blend, copolymer, or graft polymer. The method described in item 32. (Item 34) Forming the conductive polymer comprises adjusting the conductivity of the conductive polymer to a desired value. The method described in item 29. (Item 35) Adjusting the conductivity comprises using polymerization. The method described in item 34. (Item 36) Adjusting the conductivity comprises including an additive in the conductive polymer. The method described in item 34. (Item 37) Adjusting the conductivity comprises including a filler in the conductive polymer. The method described in item 34. (Item 38) Forming the conductive polymer comprises spin coating, slit coating, dip coating, spray coating, electrospinning, vapor deposition, gravure coating, or a combination thereof. The method described in item 29. (Item 39) Forming the conductive polymer comprises forming a plurality of layers. The method described in item 29. (Item 40) Further comprising forming a conductive layer between the conductive polymer and the substrate, The method described in item 29. (Clause 41) Forming the conductive polymer comprises adjusting the conductivity of the conductive polymer based on the conductivity of the conductive layer so that the total conductivity of the reticle stage cleaning apparatus is adjusted to a desired value. The method described in item 40. (Item 42) The rigidity of the conductive polymer is lower than the rigidity of the conductive layer. The method described in item 40. (Clause 43) Forming the conductive polymer comprises adjusting the mechanical properties of the conductive polymer to a desired value. The method described in item 29. (Item 44) The reticle stage cleaning device is brought into contact with multiple bars of the electrostatic clamp of the reticle stage, To generate an electrostatic field between the reticle stage cleaning device and the electrostatic clamp, The further comprising removing particles from the electrostatic clamp. The method described in item 29. (Clause 45) Further comprising repeating the contact step, the generating step, and the removal step to further remove particles from the electrostatic clamp to the reticle stage cleaning device, The method described in item 44.

[0121] While this document specifically refers to the use of lithography equipment in IC manufacturing, it should be understood that the lithography equipment described herein may have other applications, such as the manufacture of integrated optical systems, induction and detection patterns for magnetic domain memory, flat panel displays, LCDs, and thin-film magnetic heads. Those skilled in the art will understand that in the context of such alternative applications, the terms “wafer” or “die” used herein may be considered synonymous with the more general terms “substrate” or “target portion,” respectively. The substrates referred to herein may be processed before or after exposure using, for example, a track (typically a tool for coating a resist layer onto the substrate and developing the exposed resist), a measurement tool, and / or an inspection tool. Where applicable, the disclosures herein may apply to such substrate processing tools and other substrate processing tools. Furthermore, the substrate may be processed multiple times, for example, to create a multilayer IC, and therefore the term “substrate” used herein may refer to a substrate that already contains multiple processed layers.

[0122] Although the above specifically refers to the use of the embodiment in the context of photolithography, it should be understood that the embodiment may also be used in other applications, such as imprint lithography, and is not limited to photolithography as the context allows. In imprint lithography, the shape (topography) of the patterning device defines the pattern to be formed on the substrate. The topography of the patterning device is pressed onto the resist layer supplied to the substrate, and the resist may then be cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. After the resist has cured, the patterning device is removed from the resist, leaving the pattern behind.

[0123] It should be understood that the expressions and terms used in this document are for illustrative purposes only, not for limitation. Therefore, the terms and expressions in this specification should be interpreted by experts in the relevant technology in light of the teachings presented here.

[0124] As used in this book, the term "substrate" refers to the material on which layers of material are stacked. In some embodiments, the substrate itself may be patterned, and the material added to the substrate may also be patterned or may remain unpatterned.

[0125] The following examples illustrate, but do not limit, the aspects of this disclosure. Other appropriate modifications and adaptations to various conditions and parameters that are obvious to those skilled in the art and commonly encountered in the art are within the spirit and scope of this disclosure.

[0126] While this book specifically refers to the use of lithography equipment and / or systems in IC manufacturing, it will be explicitly understood that such equipment and / or systems have many other possible applications. For example, they can be used in the manufacture of integrated optical systems, induction and detection patterns for magnetic domain memory, LCD panels, thin-film magnetic heads, and so on. Those skilled in the art will understand that in the context of such alternative applications, the terms “reticle,” “wafer,” or “die” used in this book are interchangeable with the more general terms “mask,” “substrate,” and “target portion,” respectively.

[0127] While specific embodiments have been described above, it should be understood that embodiments other than those described may also be implemented. This description does not limit the scope of the claims.

[0128] It should be noted that the interpretation of the claims is intended to be based on the detailed description, not the summary or abstract. The summary and abstract may describe one or more typical embodiments envisioned by the inventor, but are not exhaustive and are not intended to limit the embodiments and appended claims in any way.

[0129] The embodiments have been described above using functional blocks that describe the implementation of specific functions and their relationships. The boundaries of these functional blocks are defined arbitrarily in this document for the sake of clarity. Alternative boundaries can also be defined, as long as the specific functions and their relationships are performed appropriately.

[0130] The above-described descriptions of specific embodiments are intended to fully illustrate the general nature of this disclosure, and those skilled in the art can readily modify and / or adapt such specific embodiments to various uses without excessive experimentation and without departing from the general concepts of this disclosure, by applying their knowledge in the art. Such adaptations and modifications are therefore intended to be within the meaning and scope of equivalents of the disclosed embodiments, based on the teachings and guidelines provided herein.

[0131] The breadth and scope of the embodiments should not be limited by any of the typical embodiments described above, but should be defined solely in accordance with the following claims and their equivalents.

Claims

1. A cleaning device for clamps in a lithography apparatus, A substrate having a front surface and a back surface opposite to the front surface, A conductive layer provided on the front surface of the substrate and configured to contact the clamp and dissipate charge on the clamp, comprising a conductive layer configured to remove particles on the clamp via an electrostatic field generated between the conductive layer and the clamp, Cleaning device.

2. The conductivity of the conductive layer is at least about 1 S / cm, at least about 10 S / cm, or at least about 100 S / cm. The cleaning apparatus according to claim 1.

3. The conductivity of the conductive layer is within the range of approximately 1 S / cm to approximately 600 S / cm, approximately 10 S / cm to approximately 600 S / cm, or approximately 100 S / cm to approximately 600 S / cm. The cleaning apparatus according to claim 1.

4. The conductivity of the conductive layer is variable and configured to be adjusted to a desired value. The cleaning apparatus according to claim 1.

5. The conductive layer comprises a conductive polymer. The cleaning apparatus according to claim 1.

6. The conductive polymer comprises polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene vinylene), trans-polyacetylene, or a combination thereof. The cleaning apparatus according to claim 5.

7. The conductive polymer comprises an additive configured to modify the conductivity and / or mechanical properties of the conductive polymer. The additive comprises carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, acid scavengers, pigments, antistatic agents, nucleating agents, tribological compounds, slip compounds, or combinations thereof. The cleaning apparatus according to claim 5.

8. The conductive polymer comprises a filler configured to modify the conductivity and / or mechanical properties of the conductive polymer. The filler comprises an organic material, an inorganic material, a polymer material, a metallic material, a ceramic material, or a combination thereof. The cleaning apparatus according to claim 5.

9. The conductive polymer comprises a single layer, The conductive polymer comprises multiple layers, or The conductive polymer is subject to surface treatment and / or surface modification. The cleaning apparatus according to claim 5.

10. The system further comprises a second conductive layer provided between the conductive layer and the substrate, The rigidity of the conductive layer is lower than that of the second conductive layer. The conductivity of the second conductive layer is in the range of approximately 50 S / cm to approximately 850 S / cm. The second conductive layer comprises chromium nitride, titanium nitride, or carbon nitride. The conductivity of the conductive layer is variable and is configured to compensate for the conductivity of the second conductive layer so that the total conductivity of the cleaning device is adjusted to a desired value. The cleaning apparatus according to claim 1.

11. The cleaning device is a reticle stage cleaning device, The clamp is a reticle clamp. The cleaning apparatus according to claim 1.

12. A lighting system configured to illuminate a patterning device, A projection system configured to project the image of the patterning device onto a patterning substrate, A reticle stage configured to support the patterning device, comprising a chuck and an electrostatic clamp having a plurality of crowbars, The reticle stage cleaning device comprises a device configured to dissipate the charge on the electrostatic clamp and remove particles on the electrostatic clamp, The reticle stage cleaning apparatus is A substrate having a front surface and a back surface opposite to the front surface, A conductive layer provided on the front surface of the substrate and configured to contact the plurality of bars of the electrostatic clamp, the conductive layer being configured to remove particles on the electrostatic clamp via an electrostatic field generated between the conductive layer and the electrostatic clamp, Lithography equipment.

13. A method for forming a reticle stage cleaning apparatus for removing particles on the reticle stage in a lithography apparatus, A method comprising forming a conductive polymer having an conductivity of at least about 1 S / cm on the front surface of a substrate.

14. The reticle stage cleaning device is brought into contact with multiple bars of the electrostatic clamp of the reticle stage, To generate an electrostatic field between the reticle stage cleaning device and the electrostatic clamp, The further comprising removing particles from the electrostatic clamp, The method according to claim 13.

15. The process further comprises repeating the contact step, the generation step, and the removal step to further remove particles from the electrostatic clamp to the reticle stage cleaning device. The method according to claim 14.

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