Shower head inlet supply manifold

Abstract

The apparatus for supplying process gas includes first and second gas passages, an annular plenum, a radial path, a second gas inlet, and a third gas passage. The first gas passage has a first proximal end and a distal end spaced apart in a first direction. The first proximal end defines the first gas inlet. The first and second gas passages are fluidly connected. The second gas passage has a second proximal end spaced apart from the first distal end in a first direction, and a second distal end spaced apart from the second proximal end in a first direction. The second distal end defines the first gas outlet. The annular plenum surrounds the first and second gas passages. The radial path fluidly connects the annular plenum to the first and second gas passages. The third gas passage extends from the second gas inlet and is fluidly connected to the annular plenum.

Description

Background Art

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[0001] Semiconductor manufacturing typically involves one or more processing operations, such as depositing and / or etching structures on or in a semiconductor wafer (or substrate). For example, a typical processing operation may involve a substrate being supported on a pedestal within a processing chamber and one or more process gases flowing into the processing chamber via a gas distributor to effect a desired result such as the deposition of a material layer on the substrate. As semiconductor manufacturing scales up to meet consumer demand, the feasibility of the processing operations may depend not only on the uniformity within the wafer but also on the reproducibility between wafers with respect to the processing conditions within and between the processing chambers and / or stations of at least one or more semiconductor manufacturing tools. However, variations can introduce differences in the desired effects, such as non-uniform depositions and / or different etching profiles compared to heterogeneous processing chambers / stations.

[0002] The background art provided herein is for generally presenting the context of the present disclosure. To the extent that it is described in this background art, the research of the inventors and aspects of the description that may not be regarded as prior art at the time of filing are not admitted as prior art to the present disclosure, either explicitly or implicitly.

[0003] Details of one or more implementations of the subject matter described herein are set forth in the accompanying drawings and the description below. Other features, aspects, and advantages will become apparent from the description, the drawings, and the claims. The following non-limiting implementations are considered a part of the present disclosure, and other implementations will become apparent from the present disclosure as a whole and the accompanying drawings.

Summary of the Invention

Problems to be Solved by the Invention

[0004] Some embodiments provide an apparatus capable of uniformly (or substantially uniformly) mixing and supplying one or more gases as part of a semiconductor processing operation or a step thereof.

[0005] Further aspects are described in the following detailed description, some of which may be apparent from this disclosure or acquired through the disclosed aspects and / or practice of the claimed subject matter. [Means for solving the problem]

[0006] In some embodiments, a device configured to supply process gas to a gas distributor includes a first gas passage, a second gas passage, a first annular plenum, a radial passage, a second gas inlet, and a plurality of third gas passages. The first gas passage has a first proximal end and a first distal end spaced apart from each other in a first direction, the first proximal end defining a first gas inlet. The second gas passage is fluidly connected to the first gas passage. The second gas passage has a second proximal end spaced apart from the first distal end in a first direction, and a second distal end spaced apart from the second proximal end in a first direction. The second distal end defines a first gas outlet. The first annular plenum surrounds the first gas passage and the second gas passage. The radial flow path spans between the first and second gas passages, fluidizing the first annular plenum to both the first and second gas passages. The second gas inlet is spaced apart from the first gas inlet in a second direction perpendicular to the first direction. The third gas passage extends from the second gas inlet and fluidizing correspondingly different portions of the first annular plenum.

[0007] In some embodiments, a first gas passage and a third gas passage may be defined within a first body, a second gas passage may be defined within a second body adjacent to the first body, a first annular plenum may be defined by at least opposing surfaces of the first body and the second body, and radial passages may be defined by at least opposing surfaces of the first body and the second body.

[0008] In some embodiments, the first body may include a first surface, a second surface, a hole, and a first projection. The second surface may face the first surface in a first direction. The hole may be within the second surface and may be coaxially aligned with a first gas passage. The hole may extend in a third direction opposite to the first direction and may terminate on the third surface located between the first and second surfaces. The first projection may extend from the third surface in a first direction and may terminate on a fourth surface. The fourth surface may have a first distal end defined therein. The second body may include a fifth surface, a projection, and a seventh surface. The projection may extend from the fifth surface in a third direction and may terminate on a sixth surface. The sixth surface may have a second proximal end defined therein. The seventh surface may face the fifth surface in a first direction. The seventh surface may have a second distal end defined therein. The second body may be at least partially supported within the bore. The fifth surface may be spaced apart from the third surface in a first direction. The first annular plenum may be defined by at least the third and fifth surfaces. The radial flow channels may be defined by at least the fourth and sixth surfaces.

[0009] In some embodiments, the cross-sectional area of ​​the second gas passage in a plane perpendicular to the first direction may increase as the distance from the second proximal end increases.

[0010] In some embodiments, the second gas passage may have a frustoconical structure.

[0011] According to some embodiments, the first gas passage may have a cylindrical configuration.

[0012] In some embodiments, the fourth direction may be perpendicular to the first and second directions, the first reference plane may be defined by the first and fourth directions and may include the central axis of the first gas passage, and the second reference plane, perpendicular to the first reference plane, may include the central axis of the third gas passage.

[0013] In some embodiments, the third gas passage may have a configuration symmetrical with respect to the first reference plane.

[0014] In some embodiments, the apparatus may further include a plurality of first risers extending from correspondingly different portions of the first annular plenum in a third direction opposite to the first direction. Each of the first risers may fluidly connect to a correspondingly different portion of the first annular plenum a third gas passage.

[0015] In some embodiments, each first riser may have an extension central axis in a third direction, and each third gas passage may have an extension central axis that is inclined with respect to the extension central axis of the first riser to which it is fluidly connected.

[0016] In some embodiments, the apparatus may further include a plurality of second risers that fluidly connect each third gas passage to a corresponding first riser.

[0017] In some embodiments, the apparatus may further include a fourth gas passage fluidly connected to the first gas passage between a first proximal end and a first distal end. The extensional central axis of the fourth gas passage may extend perpendicular to the second direction.

[0018] In some embodiments, the apparatus may further include a fifth gas passage fluidly connected to a third gas passage between a second gas inlet and a first distal end. The extensional central axis of the fifth gas passage may extend in a fourth direction perpendicular to the first and second directions.

[0019] In some embodiments, the apparatus may further include a process gas valve manifold, a first gasket, a second gasket, and a third gasket. The process gas valve manifold may be fluidly connected to a first gas inlet and a second gas inlet. The process gas valve manifold may be configured to regulate the flow of one or more gases to the first gas inlet and the second gas inlet, respectively. The first gasket can surround and seal the first gas inlet in the apparatus. The second gasket can surround and seal the second gas inlet in the apparatus. The third gasket can surround both the first and second gas inlets in the apparatus, forming a seal.

[0020] In some embodiments, the apparatus may further include a first thermal resistor interposed between the process gas valve manifold and the first body.

[0021] In some embodiments, the apparatus may further include a remote plasma source valve, a fourth gasket, a fifth gasket, and a sixth gasket. The remote plasma source valve may be fluidly connected to the fourth and fifth gas passages. The remote plasma source valve may be configured to regulate the flow of one or more reactive species to the corresponding proximal ends of the fourth and fifth gas passages, respectively. The fourth gasket may surround and seal the proximal end of the fourth gas passage in the apparatus. The fifth gasket may surround and seal the proximal end of the fifth gas passage in the apparatus. The sixth gasket may surround both the proximal ends of the fourth and fifth gas passages in the apparatus, forming a seal.

[0022] In some embodiments, the apparatus may further include at least one second thermal resistor interposed between the first body and the remote plasma source valve.

[0023] According to some embodiments, the device may further include a seventh gasket and an eighth gasket. The gas distributor may have at least one gas distribution plenum fluidly connected to a plurality of gas distribution ports. The at least one gas distribution plenum may have a third gas inlet fluidly connected to a first gas outlet. The seventh gasket may be able to surround and seal the first gas outlet and the third gas inlet within the device. The eighth gasket may be able to surround the seventh gasket within the device and form a seal.

[0024] According to some embodiments, the device may further include a third heat resistor interposed between the gas distributor and each of the first body and the second body.

[0025] According to some embodiments, the device may further include one or more sixth gas passages and a fourth gas inlet. The one or more sixth gas passages may be fluidly connected to a first region between the third gasket and both the first gasket and the second gasket, a second region between the sixth gasket and both the fourth gasket and the fifth gasket, and a third region between the eighth gasket and the seventh gasket. The fourth gas inlet may be fluidly connected to the one or more sixth gas passages. The fourth gas inlet may be configured to supply buffer gas to the first region, the second region, and the third region through the one or more sixth gas passages.

[0026] According to some embodiments, the first region, the second region, and the third region may be fluidly connected to each other.

[0027] According to some embodiments, the device may further include a ninth gasket that surrounds and seals the first annular plenum within the device. The ninth gasket may be at least partially compressed between the first body and the second body.

[0028] According to some aspects, one or more sixth gas passages may be configured to flow buffer gas from a fourth gas inlet to a fourth region surrounded at least by a ninth gasket, from the fourth region to a third region, from the third region to a second region, from the second region to a first region, and from the first region to the atmosphere of the device.

[0029] According to some aspects, the first distal end may be spaced from the first proximal end in a first direction and a second direction.

[0030] According to some aspects, the first gas passage may define a first central axis parallel to a first direction, and the second gas passage may define a second central axis that is collinear with the first central axis.

[0031] According to some aspects, the second gas passage may define a second central axis parallel to the first direction, and the second gas inlet may be disposed along the second central axis.

[0032] In some embodiments, a device is provided configured to supply process gas to a gas distributor. The device comprises: a first gas passage having a first proximal end and a first distal end spaced apart from each other along a first central axis, the first proximal end defining a first gas inlet; a first annular plenum surrounding the first gas passage; a radial passage extending from the first annular plenum to the first gas passage and fluidly connecting the first annular plenum to the first gas passage; and a second gas passage having a second proximal end and a second distal end spaced apart from the second proximal end along a second central axis, the second proximal end spaced apart from the first distal end and the radial passage along a second central axis, the second distal The gas passage may include a second gas passage whose end defines a first gas outlet, and a plurality of fourth gas passages that span from the first annular plenum and the second proximal end and fluidly connect the first annular plenum and the second proximal end, wherein the fourth gas passage, the first annular plenum, and the radial passage may include a fourth gas passage that is fluidly interposed between the first distal end and the second proximal end, a second gas inlet spaced apart from the first gas inlet along a third axis perpendicular to the second central axis, and a plurality of third gas passages that extend from the second gas inlet and are fluidly connected to correspondingly different parts of the first annular plenum.

[0033] In some embodiments, the second gas passage may be fluidly connected to the first gas passage via a passage that extends from the first distal end through a radial flow path, through the first annular plenum, and through at least one of the fourth gas passages.

[0034] In some embodiments, the second proximal end may be offset from the first annular plenum along the second central axis.

[0035] In some embodiments, the first annular plenum may not surround the second gas passage.

[0036] In some embodiments, the radial channel may be at least partially defined by a circular base and an annular top offset from the circular base along a second axis.

[0037] In some embodiments, the fourth gas passage may be fluidly interposed between the second proximal end and the first annular plenum, and the first annular plenum may be fluidly interposed between the radial flow path and the fourth gas passage.

[0038] In some embodiments, each fourth gas passage may extend along a corresponding fourth central axis oriented at an acute angle with respect to the second central axis.

[0039] In some embodiments, the first distal end may terminate in a radial flow path, and the second proximal end may terminate in a fourth gas passage.

[0040] According to some embodiments, the apparatus may have any of the features and limitations of any of the above embodiments.

[0041] In some embodiments, a device is provided configured to supply process gas to a gas distributor. The device includes a first gas passage having a first proximal end and a first distal end spaced apart from each other along a first central axis, the first proximal end defining a first gas inlet, and a second gas passage fluidly connected to the first gas passage, the second gas passage having a second proximal end and a second distal end spaced apart from the second proximal end along a second central axis, the second proximal end spaced apart from the first distal end along a second central axis, and the second distal end defining a first gas outlet The system may include a second gas passage defining the first gas passage, a first annular plenum surrounding the first gas passage, a radial flow path spanning between the first annular plenum and the first gas passage and fluidly connecting the first annular plenum to the first gas passage, a second gas inlet spaced apart from the first gas inlet along a third axis perpendicular to the second central axis, and a plurality of third gas passages extending from the second gas inlet and fluidly connected to correspondingly different parts of the first annular plenum.

[0042] In some embodiments, the first central axis may lie collinear with the second central axis.

[0043] In some embodiments, the second gas inlet may be offset from the upper surface of the supply insert along a third axis.

[0044] In some embodiments, the first annular plenum may surround the first and second gas passages, and the radial flow path spans between the first annular plenum and the first and second gas passages, fluidizing the first annular plenum to the first and second gas passages.

[0045] In some embodiments, the first central axis may be oriented at an acute angle with respect to the second central axis.

[0046] In some embodiments, the second gas inlet may be positioned along the second central axis.

[0047] In some embodiments, the first gas inlet may be spaced apart from the second central axis along a third axis.

[0048] In some embodiments, the apparatus may further have a plurality of fourth gas passages extending from a first annular plenum to a second proximal end of a second gas passage.

[0049] In some embodiments, the second gas passage may be fluidly connected to the first gas passage via a passage that extends from the first distal end through a radial flow path, through the first annular plenum, and through at least one of the fourth gas passages.

[0050] In some embodiments, the second proximal end may be offset from the first annular plenum along the second central axis.

[0051] In some embodiments, the first annular plenum may not surround the second gas passage.

[0052] In some embodiments, the radial channel may be at least partially defined by a circular base and an annular top offset from the circular base along a second axis.

[0053] In some embodiments, the radial channel, the first annular plenum, and the fourth gas passage may be fluidly interposed between the first distal end of the first gas passage and the second proximal end of the second gas passage.

[0054] In some embodiments, each fourth gas passage may extend along a corresponding fourth central axis oriented at an acute angle with respect to the second central axis.

[0055] According to some embodiments, the apparatus may have any of the features and limitations of any of the embodiments provided above.

[0056] The general description above and the detailed description below are illustrative and explanatory, and are intended to provide further explanation of the claimed subject matter.

[0057] Various embodiments disclosed herein are shown in the figures of the accompanying drawings as examples, not as limitations, and similar reference numerals in the figures refer to similar elements. [Brief explanation of the drawing]

[0058] [Figure 1] This diagram schematically illustrates semiconductor processing systems in several configurations. [Figure 2] This figure schematically shows gas distribution assemblies of the semiconductor processing system shown in Figure 1, according to several embodiments. [Figure 3] This figure schematically shows cross-sectional views of the showerhead of the gas distribution assembly shown in Figure 2, according to several embodiments. [Figure 4]This figure schematically shows orthographic projections of the distribution plenum of the showerhead in Figure 3, according to several embodiments. [Figure 5] This diagram schematically shows the timing diagram illustrating the basic sequence of operations for forming a film of material on a substrate via a deposition process, according to several embodiments. [Figure 6] This figure schematically shows exploded perspective views of the supply manifold assembly of the gas distribution assembly shown in Figure 2, in several different configurations. [Figure 7] This figure schematically shows perspective views of the supply manifold assembly of the gas distribution assembly shown in Figure 2, in several different configurations. [Figure 8] This figure schematically shows various orthographic projections of the supply manifold assembly of Figure 7 in several embodiments. [Figure 9] This figure schematically shows various orthographic projections of the supply manifold assembly of Figure 7 in several embodiments. [Figure 10] This figure schematically shows various orthographic projections of the supply manifold assembly of Figure 7 in several embodiments. [Figure 11] This figure schematically shows various orthographic projections of the supply manifold assembly of Figure 7 in several embodiments. [Figure 12] This figure schematically shows cross-sectional views of the supply manifold assembly of Figure 8 taken along section line 12-12 in several embodiments. [Figure 13] This figure schematically shows detailed views of part 13 of Figure 12 in several embodiments. [Figure 14] This figure schematically shows detailed views of part 13 of Figure 12 in several embodiments. [Figure 15] This figure schematically shows perspective views of the first flow path of the supply manifold assembly of Figure 7 in several embodiments. [Figure 16] This figure schematically shows orthographic projections of the first flow path in Figure 15 in several embodiments. [Figure 17]This figure schematically shows another orthographic projection of the first flow path in Figure 15, according to several embodiments. [Figure 18] This figure schematically shows yet another orthographic projection of the first flow path in Figure 15, according to several embodiments. [Figure 19] This figure schematically shows perspective views of the second flow path of the supply manifold assembly of Figure 7 in several embodiments. [Figure 20] This figure schematically shows various orthographic projections of the second flow path in Figure 19, according to several embodiments. [Figure 21] This figure schematically shows various orthographic projections of the second flow path in Figure 19, according to several embodiments. [Figure 22] This figure schematically shows perspective views of the supply housing of the supply manifold assembly shown in Figure 7, in several embodiments. [Figure 23] This figure schematically shows various orthographic projections of the supply housing of Figure 22 in several embodiments. [Figure 24] This figure schematically shows various orthographic projections of the supply housing of Figure 22 in several embodiments. [Figure 25] This figure schematically shows various orthographic projections of the supply housing of Figure 22 in several embodiments. [Figure 26] This figure schematically shows various orthographic projections of the supply housing of Figure 22 in several embodiments. [Figure 27] This figure schematically shows cross-sectional views of the supply housing of Figure 25 taken along the dividing line 27-27, according to several embodiments. [Figure 28] This figure schematically shows various perspective views of the supply insert of the showerhead supply manifold assembly shown in Figure 7, according to several embodiments. [Figure 29] This figure schematically shows various perspective views of the supply insert of the showerhead supply manifold assembly shown in Figure 7, according to several embodiments. [Figure 30] This figure schematically shows various orthographic projections of the supply insert of Figure 28 in several embodiments. [Figure 31] This figure schematically shows various orthographic projections of the supply insert of Figure 28 in several embodiments. [Figure 32] This figure schematically shows cross-sectional views of the supply insert of Figure 30 taken along the dividing line 32-32 in several embodiments. [Figure 33] This diagram schematically illustrates a multi-station processing tool in several configurations. [Figure 34] These are cross-sectional views of supply assemblies according to various embodiments. [Figure 35] This figure schematically shows perspective views of the first flow path of the supply manifold assembly of Figure 34 in several embodiments. [Figure 36] This figure schematically shows orthographic projections of the first flow path in Figure 34 in several embodiments. [Figure 37] This figure schematically shows another orthographic projection of the first flow path in Figure 34, according to several embodiments. [Figure 38] This figure schematically shows yet another orthographic projection of the first flow path in Figure 34, according to several embodiments. [Figure 39] This figure schematically shows a detailed view of part 13B of Figure 34 in several embodiments. [Figure 40] This figure schematically shows a detailed view of part 13B of Figure 34 in several embodiments. [Figure 41] This diagram schematically shows cross-sectional views of different supply manifold assemblies in several embodiments. [Figure 42] This figure schematically shows cross-sectional views of the supply insert of Figure 41 in several embodiments. [Figure 43] This figure schematically shows detailed views of part 43 of Figure 41 in several embodiments. [Modes for carrying out the invention]

[0059] The following description includes numerous specific details to provide a complete understanding of the various embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other examples, well-known process behaviors are not described in detail to avoid unnecessarily obscuring the disclosed embodiments. While the disclosed embodiments are described in conjunction with specific implementations, it should be understood that this does not limit the disclosed embodiments.

[0060] In this application, the terms “semiconductor wafer,” “wafer,” “substrate,” “wafer substrate,” and “partially fabricated integrated circuit” are used interchangeably. Those skilled in the art will understand that the term “partially fabricated integrated circuit” can refer to a silicon wafer in any of the many stages of integrated circuit fabrication on it. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, 300 mm, or 450 mm. In addition to semiconductor wafers, other workpieces on which the disclosed embodiments can be utilized include a variety of articles such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical elements, and micromechanical devices.

[0061] context Semiconductor wafers are often processed inside a processing chamber through operations that may include exposing the semiconductor wafers to process gases. The processing chamber may include a gas distribution assembly, which may include a showerhead and showerhead inlet that supplies the process gases to the semiconductor wafers located inside the processing chamber. The process gases used to process the substrate during various processing stages may include, for example, a carrier gas, a precursor (gas and / or vaporized liquid), and / or a purge gas. The gas distribution assembly may include one or more combinations of channels and plenums and may be designed to, for example, mix process gases before flowing them to the showerhead for supply to the substrate, for example, mixing a precursor with a carrier gas, mixing two or more gases, or mixing one or more gases with one or more reactants.

[0062] Wafer uniformity is recognized as a critical factor in the processing of high-quality semiconductor wafers. Various factors during wafer processing can affect wafer uniformity, including gas distribution uniformity across the wafer, temperature distribution across the wafer, pressure imbalance across the wafer, plasma density distribution (when plasma is used), and the presence of fine particles. Considerable effort has been expended to design gas distribution system showerheads that distribute gas more uniformly from one or more inlets across the entire surface of the substrate. Despite these efforts, conventional inlets and associated mixing structures still exhibit undesirable, non-uniform azimuthal distributions of individual reactants mixed within such structures. Furthermore, conventional inlets and associated mixing structures can also suffer from the penetration of air pollutants (e.g., moisture, undesirable gases, etc.) into their channels, which can also negatively impact manufacturing yield and device performance. Such problems can be further exacerbated by the presence of thermal gradients and associated heat transfers within the gas distribution assembly or between adjacent components connected thereto.

[0063] In various embodiments, a supply manifold assembly is provided to uniformly mix one or more gases, precursors, reactants, etc., before their introduction into the showerhead plenum of a gas distribution assembly and to effectively purge its internal flow paths. In some cases, the supply manifold assembly may include a first (e.g., central) passage having a first inlet through which gas may flow into the showerhead. The first passage may have a first substantially cylindrical flow path portion and a second substantially frustoconical flow path portion. The first passage may be fluid-connected to an annular plenum surrounding the first passage by one or more radial paths extending between the first and second flow path portions of the first passage. The annular plenum may also be fluid-connected to a plurality of second passages that may branch off from a common second inlet offset from the first inlet. Each of the second passages may have a first portion extending parallel (or substantially parallel) to the first passage, a second portion branching off from the second inlet and extending perpendicular to the first passage, and a third portion fluidly connecting the first and second portions. The third passage may be fluidly connected to the first passage at a point further along the first flow path portion than the first inlet, and offset from the point where the radial path intersects the first passage and the annular plenum. Similarly, the fourth passage may be fluidly connected to each of the second passages at corresponding points further further along the second passage than the second inlet, and offset from the respective points where the first portion of the second passage intersects the annular plenum. In some implementations, the supply manifold assembly may also be configured to prevent, or at least reduce, the infiltration of air pollutants such as moisture and undesirable gases into the flow path between the supply manifold assembly and one or more interface components.In some embodiments, one or more features and / or components of the supply manifold assembly may be configured to enhance thermal uniformity by reducing contact interfaces between the supply manifold assembly and adjacent components, such as between the supply manifold assembly and at least one of the process gas valve manifold, remote plasma source valve, and showerhead, and / or through the use of thermal resistors.

[0064] Such supply manifold assemblies may be suitable for use in any semiconductor tool performing any of the various types of semiconductor wafer or substrate processing operations, such as atomic layer deposition (ALD) and atomic layer etching (ALE), as well as their plasma-enhanced versions. ALD is a film formation technique well suited for the deposition of conformal films, given that a single cycle of ALD can deposit a single but uniformly thin layer of material on a substrate. For this purpose, multiple ALD cycles may be used to build a film of a desired thickness. Given that each layer is thin and conformal, the resulting film substantially conforms to the shape of the underlying device structure. ALE is the inverse of ALD. In other words, ALE is an etching technique used to selectively and precisely remove one or more target materials on or within a semiconductor wafer, due to the fact that a single cycle of ALE can remove only a single layer of material.

[0065] Returning to ALD, the ALD process for forming multiple film layers on a substrate in a processing chamber may begin with a first operation in which a precursor is provided onto the substrate so that the precursor is adsorbed to form layers on the substrate, followed by a second operation in which excess precursor and / or reaction byproducts are removed from a process volume that at least partially surrounds the substrate. Subsequently, in a third operation, the adsorbed precursor is reacted with reactants to form film layers on the substrate. Then, in a fourth operation, the desorbed film precursor and / or reaction byproducts are removed from a process volume that at least partially surrounds the film layers.

[0066] Process gases used in substrate processing operations may be distributed into the process volume using a gas distribution assembly having a supply manifold assembly fluidly connected to a gas distributor, such as a showerhead of a semiconductor tool. An exemplary system incorporating such a gas distribution assembly is described in more detail with reference to Figure 1 in the context of the ALD process. Various components of the gas distribution assembly, such as embodiments of the showerhead and supply manifold assembly, are described in more detail with reference to Figures 2 to 32.

[0067] Systems for semiconductor processing Figure 1 schematically shows a semiconductor processing system in several embodiments.

[0068] Referring to Figure 1, an exemplary substrate processing system (or system) 100 is shown. Various mounting configurations are described in the context of atomic layer deposition (ALD) and / or plasma-enhanced ALD (PEALD), but the embodiments are not limited thereto. For example, the substrate processing system 100 may be used in the context of chemical vapor deposition (CVD), PECVD, chemical vapor etching (CVE), PECVE, atomic layer etching (ALE), PEALE, etc. As shown, the substrate processing system 100 includes a processing chamber 101 surrounding various other components of the system 100, which may include radio frequency (RF) plasma when used. The system 100 may include an upper electrode 103 and a substrate support 105 such as an electrostatic chuck (ESC), pedestal, or any other suitable substrate support. During operation, the substrate 107 may be supported or otherwise placed on the substrate support 105.

[0069] In some embodiments, the upper electrode 103 may include, or define, part of a gas distribution assembly, such as a showerhead, which is fluidly connected to a supply manifold assembly 109 that introduces and distributes one or more gases into at least one process volume 111 defined between the showerhead and the substrate 107. Hereinafter, we assume that the upper electrode 103 is the showerhead of the gas distribution assembly, and therefore the showerhead and upper electrode may be referred to as the showerhead 103. The supply manifold assembly 109 may define a stem portion connected to the showerhead 103. In some cases, the stem portion may have a first end connected to the upper surface of the processing chamber 101 and a second end connected to the showerhead 103, but the implementation is not limited thereto. For example, the showerhead 103 may form the upper plate of the processing chamber 101, and therefore the stem portion may be located outside the internal cavity 113 of the processing chamber 101. In some implementations, the showerhead 103 may have a substantially cylindrical configuration extending radially outward from the second end of the stem portion of the supply manifold assembly 109. The surface or faceplate of the showerhead 103 facing the substrate 107 may include a number of gas distribution holes through which one or more gases, such as process gases and purge gases, may flow. Alternatively, the showerhead 103 may include a conductive plate through which various gases may be introduced into the process volume 111 in a different manner. Various embodiments of the gas distribution assembly are described in more detail with reference to Figures 2 to 32.

[0070] The substrate support 105 may include a conductive base plate that functions as a lower electrode. The conductive base plate may support a heating plate, and the heating plate may correspond to a ceramic multizone heating plate, but the embodiment is not limited thereto. A thermal resistance layer may be positioned between the heating plate and the substrate support surface of the substrate support 105. In addition, the substrate support 105 may include one or more coolant channels configured to allow coolant to flow through the substrate support 105.

[0071] In some embodiments, system 100 may include an RF generation system 115 configured to generate an RF voltage and output it to one of the upper electrode of the showerhead 103 and the lower electrode of the substrate support 105. The other of the upper and lower electrodes may be DC-grounded, AC-grounded, or electrically floating. RF generation system 115 may include an RF generator 117 configured to generate RF power which can be supplied to the upper or lower electrode by a matched distribution network 119. RF power may be used to generate plasma within the process volume 111. In other examples, the plasma may be generated inductively or remotely. For example, the plasma may be generated remotely by a remote plasma source and introduced into the process volume 111 via a remote plasma source (RPS) valve fluidly connected to a supply manifold assembly 109.

[0072] One or more gas supply systems, such as gas supply systems 121_1, 121_2, ..., and 121_M (where M is a positive integer greater than 0), may include one or more gas sources, such as gas sources 123_1, 123_2, ..., and 123_N (where N is a positive integer greater than 0) of gas supply system 121_1. For convenience, one or more gas supply systems and one or more gas sources are referred to collectively or individually as gas supply system 121 and gas source 123, respectively. Gas source 123 is connected to manifold 129 by valves 125_1, 125_2, ..., and 125_N (hereinafter referred to collectively or individually as valve 125), and corresponding mass flow controllers 127_1, 127_2, ..., and 127_N (hereinafter referred to collectively or individually as mass flow controller 127). The output of manifold 129 is fluidly connected to a gas separation system 131, which is fluidly connected to a supply manifold assembly 109. Although the gas supply system 121_1 is shown to have a specific configuration, the gas may be supplied using any suitable gas supply system. In some cases, one or more further gas supply systems 121_2, ..., 121_M may be in fluid communication with the gas separation system 131. A cleaning gas source 133, such as an RPS gas source, may also be fluidly connected to the gas separation system 131. In some cases, the gas separation system 131 may include one or more valves, such as a process gas valve manifold (PVM) configured to regulate the flow of one or more process gases from the gas source 123 and an RPS valve configured to regulate the flow of one or more reactants from the cleaning gas source 133 to the supply manifold assembly 109. In some implementations, the various valves of the gas separation system 131 may be defined as components fluidly connected to one or more inlets of the supply manifold assembly 109, as will become more apparent below, at least in relation to the description accompanying Figure 2.

[0073] The system 100 may further include a temperature controller 135 which may be communicatively connected to a plurality of thermal control elements positioned in association with one or more of the processing chamber 101, shower head 103, substrate support 105, and supply manifold assembly 109. In this way, the temperature controller 135 may be configured to control the plurality of thermal control elements to control the temperature of at least one of the processing chamber 101, shower head 103, substrate support 105, supply manifold assembly 109, and substrate 107. In some cases, the thermal control elements may define one or more resistive heating elements, at least one of which may be included as part of a heating jacket forming part of the supply manifold assembly 109. The temperature controller 135 may communicate with a fluid supply system 137 which may be configured to control the flow of coolant to one or more components of the processing chamber 101, such as at least one of the shower head 103 and substrate support 105. For example, the fluid supply system 137 may include, but is not limited to, a coolant pump and reservoir configured to regulate the flow of coolant through channels in the substrate support 105. In some implementations, the temperature controller 135 may be configured to operate the fluid supply system 137 to selectively flow coolant to at least one of the showerhead 103 and the substrate support 105.

[0074] The system controller 139 may be configured to operate the system 100 by executing one or more sequences of one or more instructions that define at least one process recipe. Therefore, the system controller 139 can set various operational inputs to define at least one process recipe, such as power level, grounding settings, timing parameters, process gas, purge gas, cleaning gas, flow rate, distance from showerhead 103 to wafer (or substrate) 107, temperature of at least one of the processing chamber 101, showerhead 103, substrate support 105, supply manifold assembly 109, and substrate 107, shuttle speed, mechanical operation of at least one of the showerhead 103, substrate support 105, and substrate 107, and pressure level. The system controller 139 may include, for example, application-specific integrated circuits (ASICs), programmable logic devices (e.g., field-programmable gate arrays (FPGAs)) to control various components of the system 100.

[0075] In various embodiments, gases (e.g., cleaning gas, process gas, purge gas, etc.) exit the processing chamber 101 via an exhaust gas port or outlet fluidly coupled to, for example, a vacuum pump 141. The vacuum pump 141 may be a one- or two-stage mechanical dry pump and / or turbomolecular pump. In this way, the gas may be drawn out to maintain a suitable low pressure in the processing chamber 101. For this purpose, a closed-loop flow limiting device 143, such as a throttle valve or pendulum valve, may be controlled by a system controller 139 to further ensure a suitable low pressure in the processing chamber 101. It should also be noted that a robot 145 may be used to supply substrates (such as substrate 107) onto the substrate support 105 and to remove substrates from the substrate support. For example, the robot 145 can transfer the substrate 107 between the substrate support 105 and the load lock 147.

[0076] Gas distribution assembly Figure 2 schematically shows the gas distribution assembly of the semiconductor processing system of Figure 1 in several embodiments. Figure 3 schematically shows a cross-sectional view of the showerhead of the gas distribution assembly of Figure 2 in several embodiments. Figure 4 schematically shows an orthographic projection of the distribution plenum of the showerhead of Figure 3 in several embodiments.

[0077] The gas distribution assembly 200 may be used in any suitable semiconductor process operation, such as an ALD process, which may be performed in connection with system 100. In some embodiments, the gas distribution assembly 200 may include a gas distribution showerhead (or showerhead) 201, a supply manifold assembly 203, a process gas valve manifold (PVM) 205, and a remote plasma source (RPS) valve 207. The showerhead 201 and the supply manifold assembly 203 may correspond to the showerhead 103 and the supply manifold assembly 109, respectively, as described in connection with Figure 1. Thus, the showerhead 201 may be referred to interchangeably with the showerhead 103 or 201, and the supply manifold assembly 203 may be referred to interchangeably with the supply manifold assembly 109 or 203.

[0078] In some implementations, the supply manifold assembly 203 may be fluidly connected to the showerhead 201 via a backplate 209. For example, the mating (or connecting) flange 211 of the supply manifold assembly 203 may be coupled to the mating surface 213 of the backplate 209 so as to allow one or more flow paths (or passages) of the supply manifold assembly 203 to be fluidly connected to at least one distribution plenum (e.g., distribution plenums 215 and 217) of the showerhead 201. To this end, the supply manifold assembly 203 can distribute gas (e.g., cleaning gas, process gas, purge gas, etc.) to the showerhead 201 using various flow paths, manifolds, plenums, valves, etc. that may be fluidly connected to and / or defined within the supply manifold assembly 203. In some cases, before the process gas is introduced into the supply manifold assembly 203 and flows into at least one of the distribution plenums of the showerhead 201 (e.g., distribution plenum 215), one or more precursors may be mixed at least partially with one or more carrier gases, at least using, for example, PVM 205. To prevent or reduce the possibility of air pollutants (e.g., moisture, undesirable gases, etc.) seeping into the flow paths of the supply manifold assembly 203 and between the supply manifold assembly, a buffer (or sealing) gas may be flowed into the supply manifold assembly 203 through the buffer gas inlet 219. As will become clearer below, a buffer gas (e.g., argon, carbon dioxide, nitrogen, nitrogen-enriched air, etc.) may be flowed around and / or between the various mechanical gaskets of the supply manifold assembly 203 to purge any potential atmospheres present at various interfacial sealing locations. Note that in some cases, the buffer gas may be the same as the purge gas used to purge the gas distribution assembly 200 and various components of the processing chamber 101.

[0079] In some implementations, the reactive species of the dissociated cleaning gas generated by a remote plasma source (e.g., cleaning gas source 133) may be introduced into one or more of the channels of the supply manifold assembly 203. The reactive species may be used to activate semiconductor process operations, such as a deposition process. The introduction of the reactive species generated by the RPS into one or more channels of the supply manifold assembly 203 may be controlled by an RPS valve 207, which can form part of the gas separation system 131, as described above. The reactive species may also be used for cleaning operations before, during, and / or after one or more stages of substrate processing.

[0080] In some substrate processing operations using the gas distribution assembly 200, the substrate (e.g., substrate 107) may be alternately exposed to a first process gas and a second process gas. The first and second process gases may react when exposed to each other. Therefore, to prevent or reduce the possibility of undesirable reactions, an effective purging of the process gases from the showerhead 201, the supply manifold assembly 203, and / or the processing chamber associated therewith (e.g., processing chamber 101) may be performed. To perform the purging, an inert gas can be flowed through the supply manifold assembly 203, the showerhead 201, and the processing chamber (e.g., processing chamber 101) to push out residual process gases from their respective volumes. In this regard, the supply manifold assembly 203 may be configured to supply several different process gases, as well as a purging gas and / or cleaning gas, depending on the phase (or stage) of the substrate processing operation.

[0081] Figure 5 shows an example of a substrate processing operation that schematically depicts a timing diagram illustrating the basic sequence of operations for forming a film of material on a substrate via a deposition process in several embodiments. As seen in Figure 5, process steps for four deposition cycles of the ALD operation are shown, each cycle including process steps of precursor supply, RF power supply, purging, and reaction gas supply. The process steps in Figure 5 are indicated by their corresponding lines and are presented with either an on or off Boolean value. When the corresponding line is in the "on" position (shown as a high state in Figure 5), the process step is "on," and when the corresponding line is in the "off" position (shown as a low state in Figure 5), the process step is "off." The processing chamber may be pressurized during all four deposition cycles. One deposition cycle is highlighted or otherwise defined in Figure 5 by a dashed line 501 and is therefore called cycle 501. In cycle 501, the first phase of the deposition cycle may be the dosing phase. During the dosing phase, a first process gas, such as a process gas containing a precursor, may be supplied to the processing chamber, but the RF power may be off and no reaction gas may be supplied. During the dosing phase, the substrate (e.g., substrate 107) may adsorb at least a portion of the first process gas and form an adsorption layer on the substrate.

[0082] A purge phase may be performed after the dosing phase. During the purge phase, the supply of the first process gas may be stopped, and the purge gas may flow through the showerhead 201, the supply manifold assembly 203, and the associated processing chamber (e.g., processing chamber 101). Note that RF power may still remain off during the purge phase. The purge phase may purge the showerhead 201, the supply manifold assembly 203, and any remaining processing chamber of the first process gas, as well as removing at least some unabsorbed film precursor and / or reaction byproducts from a volume (e.g., process volume 111) that at least partially surrounds the substrate. In some cases, the purge gas may also act as or be utilized as a carrier gas for the reactants in the first process gas during the dosing phase, and the reactant supply may simply be turned off during the purge phase to allow only the carrier gas to flow, but the embodiments are not limited thereto.

[0083] After the purging phase, the deposition cycle can enter a conversion phase. During the conversion phase, a second process gas, for example, a process gas containing one or more other reaction gases, may be introduced into the processing chamber through the supply manifold assembly 203 and the showerhead 201, and RF power can be turned on while the second process gas is being supplied to generate plasma. In some cases, reaction species from a remote plasma source may be mixed with the second process gas via the supply manifold assembly 203 before being introduced into the showerhead 201. During the conversion phase, the adsorbed first process gas can react with the second process gas to form a film layer on the substrate.

[0084] After the conversion phase is complete, the deposition cycle can enter the post-RF purge phase. The post-RF purge phase can remove desorbed process gases and / or reaction byproducts from a volume (e.g., process volume 111) that at least partially surrounds the substrate after reacting with the adsorbed precursor. A purge gas similar to or different from the purge gas used in the previous purge phase may be used to purge the supply manifold assembly 203, the showerhead 201, and the processing chamber for residual process gases and / or plasma-generated reactive species in a similar manner to the previous purge phase.

[0085] Given that process gases can react when mixed to form undesirable byproducts, an ideal ALD process would have clear on / off supply of process gases to the substrate, as shown in Figure 5, to facilitate consistent adsorption of process gases by the substrate, along with effective purging between the dosing and conversion phases. Furthermore, the supply and purging of process gases would be performed as quickly as possible to maximize substrate processing throughput. Moreover, the mixing of one or more gases and / or one or more reactive species, e.g., process gas, purge gas, washing gas, etc., with one or more gases before introduction to the showerhead 201 would prevent, or at least reduce, the possibility of, a distorted distribution of the components of the mixture in at least one of the distribution plenums of the showerhead 201 (e.g., distribution plenums 215 and 217). This would facilitate the uniform spreading of the components of the mixture onto the substrate (e.g., substrate 107), thereby promoting a uniform film deposition thickness on the substrate.

[0086] It is recognized that preventing, or at least reducing the likelihood of, the penetration of air pollutants (e.g., moisture, undesirable gases, etc.) through mechanical gaskets (e.g., O-rings) at interfacial sealing locations between adjacent fluid components can prevent various manufacturing defects, undesirable process gas reactions, process gas dilution, flow path corrosion, particulate matter generation, and other effects. Furthermore, improving thermal separation and / or uniformity between the components of the gas distribution assembly 200 can also prevent, or at least reduce the likelihood of, undesirable reactions, condensation formation, particulate matter generation, and / or similar effects in at least one of the supply manifold assembly 203 and the showerhead 201, as well as prevent or reduce associated manufacturing defects related to structures formed on or within the substrate. For this purpose, for example, thermal performance and active control of the temperature of various components may be improved by reducing thermal contact between the supply manifold assembly 203 and adjacent components such as the showerhead 201, PVM 205, and RPS valve 207. This may also be achieved and / or improved through the use of one or more thermal resistors (or insulators) placed between contacting or otherwise adjacent components.

[0087] Referring back to Figures 2-4, the shower head 201 may include a faceplate 301, a support ring 303, a manifold 305, and a backplate 307. In some cases, the backplate 307, the manifold 305, and the faceplate 301 may be joined to each other via one or more fasteners, such as a fastener 309. Although not shown, the manifold 305, the support ring 303, and the faceplate 301 may similarly be joined to each other via one or more other or further fasteners.

[0088] In various embodiments, the manifold 305 and faceplate 301 may include portions of a distribution plenum 215, each having one or more spoke-like configurations. For example, in some cases, the distribution plenum 215 may include a central stem portion 215_1, a distribution hub 311, and a plurality of first spoke-like passages 215_2 formed within the manifold 305. The central stem portion 215_1 may include a distal end fluidly connected to a gas outlet of a supply manifold assembly 203 and a distal end having a distribution hub 311. The distribution hub 311 may be configured to divide the gas flow from the supply manifold assembly 203 into first spoke-like passages 215_2 that may extend radially from the distribution hub 311. The distal end portions of the corresponding first spoke-like passages 215_2 may include corresponding outlets fluidly connected to respective risers 215_3 formed in the faceplate 301. The distal end of the riser 215_3 can each supply a plurality of second spoke-like passages 215_4 in a faceplate 301, which are fluidly connected to, for example, a corresponding portion of the distribution plenum 217. The output surface 221 of the faceplate 301 may include a plurality of gas distribution ports 223 formed therein, which are fluidly connected to the distribution plenum 217 and configured to distribute gas into the process volume 111.

[0089] In one or more embodiments, the supply manifold assembly 203 may be configured to uniformly mix one or more gases, one or more precursors, and / or at least two of one or more reactive species before introducing them to the central stem portion 215_1 of the showerhead 201, thereby preventing, or at least reducing, a distorted distribution of the components of the mixture in the distribution plenums 215 and 217. Insufficient mixing of the components of the gas flow before introduction to the central stem portion 215_1 can lead to a non-uniform azimuthal distribution of one or more components in the distribution plenums 215 and 217. This non-uniformity may further translate to a non-uniform spread of one or more components on the substrate 107, for example, one gas species being dominant in one of several zones and a second gas species being dominant in another zone. Thus, various embodiments of the supply manifold assembly 203 may be configured to address one or more of the above problems individually and / or simultaneously, as will become more apparent below.

[0090] Supply manifold assembly As previously mentioned, the process gas used in the substrate processing operation may be distributed into the processing chamber via a gas distribution assembly. In some embodiments, the gas distribution assembly may include a supply manifold assembly fluidly connected to a showerhead, which is configured to distribute the gas received from the supply manifold assembly into the processing chamber. Hereinafter, several exemplary supply manifold assemblies, as well as one or more of their associated components, are described in more detail with reference to Figures 6 to 43.

[0091] Figure 6 schematically shows exploded perspective views of the supply manifold assembly of the gas distribution assembly of Figure 2 in several embodiments. Figure 7 schematically shows perspective views of the supply manifold assembly of the gas distribution assembly of Figure 2 in several embodiments. Figures 8, 9, 10, and 11 schematically show various orthographic projections of the supply manifold assembly of Figure 7 in several embodiments. Figure 12 schematically shows a cross-sectional view of the supply manifold assembly of Figure 8 taken along section line 12-12 in several embodiments. Figures 13 and 14 schematically show detailed views of section 13 of Figure 12 in several embodiments. Figure 15 schematically shows a perspective view of the first flow path of the supply manifold assembly of Figure 7 in several embodiments. Figures 16, 17, and 18 schematically show various orthographic projections of the first flow path of Figure 15 in several embodiments. Figure 19 schematically shows a perspective view of the second flow path of the supply manifold assembly of Figure 7 in several embodiments. Figures 20 and 21 schematically show various orthographic projections of the second flow path in Figure 19 in several embodiments. Figure 22 schematically shows a perspective view of the supply housing of the supply manifold assembly in Figure 7 in several embodiments. Figures 23, 24, 25, and 26 schematically show various orthographic projections of the supply housing in Figure 22 in several embodiments. Figure 27 schematically shows a cross-sectional view of the supply housing in Figure 25 taken along section line 27-27 in several embodiments. Figures 28 and 29 schematically show various perspective views of the supply insert of the showerhead supply manifold assembly in Figure 7 in several embodiments. Figures 30 and 31 schematically show various orthographic projections of the supply insert in Figure 28 in several embodiments. Figure 32 schematically shows a cross-sectional view of the supply insert in Figure 30 taken along section line 32-32 in several embodiments.

[0092] Referring to Figures 6–14, 15–18, and 19–21, the supply manifold assembly 203 may include a supply housing 601, a supply insert 603, a heating jacket 605, a first thermal resistor 607, and a second thermal resistor 609. According to various embodiments, the configuration of at least the supply housing 601 and the supply insert 603 and their juxtaposition may include, or be configured to form, a plurality of first flow channels 1500, as well as a plurality of second flow channels 1900 in relation to the shower head 201, PVM 205, and RPS valve 207. The first flow channels 1500 may be used to carry and uniformly mix one or more gases (e.g., process gas, purge gas, cleaning gas, etc.) before they are introduced into the shower head 201. The second flow path 1900 can circulate one or more buffer (or purge) gases within the supply manifold assembly 203 and between the supply manifold assembly 203 and various components fluidly connected thereto, such as the showerhead 201, PVM 205, and RPS valve 207, to prevent or at least reduce the possibility of air pollutants (e.g., moisture, undesirable gases, etc.) penetrating into at least one of the first flow paths 1500. For this purpose, the heating jacket 605 may include, for example, at least one resistance heating element and an opening 605_1 in which the supply housing 601 and supply insert 603 may be supported. In this way, the heating jacket 605 may be used, for example in conjunction with a temperature controller 135, to regulate the temperature of at least the supply manifold assembly 203 before, during, and / or after at least one processing operation.

[0093] The first flow path 1500 may include a first gas inlet 1501, first gas passages 1503 and 1505, a second gas inlet 1507, a second gas passage 1509, a first annular plenum 1511, first riser paths 1513 and 1515, second riser paths 1517 and 1519, a radial path 1601, a third gas inlet 1521, third gas passages 1523 and 1525, a fourth gas inlet 1527, a fourth gas passage 1529, a fifth gas passage 1531, and a first gas outlet 1533.

[0094] The second flow path 1900 may include a fifth gas inlet 1901, sixth gas passages 1903 and 1905, a first connecting passage 1907, second annular plenums 1909, 1911 and 1913, a second connecting passage 1915, a third annular plenum 1917, a third connecting passage 3101 (see Figure 31), a fourth annular plenum 1919, a fourth connecting passage 3103 (see Figure 31), a fifth connecting passage 1921, seventh gas passages 1923 and 1925, a fifth annular plenum 1927, eighth gas passages 1929 and 1931, a seventh connecting passage 1933, a sixth annular plenum 1935, and a second gas outlet 1937.

[0095] The second gas passage 1509 may be formed within a supply housing 601 having a substantially cylindrical (or tubular) configuration, thereby extending in a first direction along an axis 1603 between the second gas inlet 1507 and the radial path 1601. Thus, the second gas passage 1509 may have a proximal end defined by the second gas inlet 1507 and a distal end 1701 located a distance 1703 from the second gas inlet 1507 in the first direction. As used herein, the terms “proximal” and “distal” refer to directions closer to and farther from a particular reference point, such as a gas flow source, respectively. In this sense, an element referred to as “proximal” may, conversely, be referred to as “distal,” depending on a particular reference point selected without departing from the teachings of this disclosure. In some cases, the axis 1603 may form not only the central axis of the second gas passage 1509 but also the central axis of the supply housing 601. For this purpose, a first reference plane defined by shafts 1603 and 1605 may extend through the central portion of the second gas passage 1509. The second gas inlet 1507 may optionally be formed on the upper surface 2201 of the supply housing 601 and may be surrounded by a first recess 2203 within a first boss 2205, the first boss 2205 may project from the upper surface 2201 of the supply housing 601 in a second direction opposite to the first direction. The first recess 2203 may be configured to support a gasket, such as an O-ring or any other suitable mechanical seal. The gasket may be configured to form a seal not only between the supply housing 601 and the PVM 205, but also around the second gas inlet 1507, when the PVM 205 is connected to the supply manifold assembly 203 by one or more fasteners, such as bolts, pins, rivets, screws, etc. One or more fasteners may each engage with an opening 2207 formed in a corresponding second boss 2209, which may extend, for example, from the upper surface 2201 of the supply housing 601 in a second direction. One or more further fasteners may each engage with an opening 2210 formed in a corresponding portion of the first boss 2205.

[0096] In some embodiments, the region between the first boss 2205 and the second boss 2209 may be configured to support the first thermal resistor 607 therein, not only to at least partially insulate the supply manifold assembly 203 from the PVM 205, but also to reduce the contact area between them in the assembled state of the gas distribution assembly 200. In this way, when the first thermal resistor 607 is incorporated as part of the supply manifold assembly 203, the first surface (e.g., top surface) 607_1 of the first thermal resistor 607 may be in contact with the PVM 205, and the second surface (e.g., bottom surface) 607_2 of the first thermal resistor 607 may be in contact with the top surface 2201 of the supply housing 601. For this purpose, the first thermal resistor 607 may include a first opening 607_3 configured to receive at least a portion of the first boss 2205 therein, and a second opening 607_4 configured to receive at least a corresponding portion of the second boss 2209 therein, respectively.

[0097] Similar to the second gas passage 1509, the first gas passages 1503 and 1505 may be formed within the supply housing 601 having a substantially tubular and cylindrical configuration, but may extend along their respective axes 1705 and 1707, which may converge or intersect in the central portion of the first gas inlet 1501. In this way, the first gas passages 1503 and 1505 may each extend from the first gas inlet 1501, each having its respective central portion in a second reference plane, typically defined by axes 1607 and 1801. In some embodiments, the second reference plane may extend in a direction perpendicular to the extension direction of the first reference plane. For example, an angle 1803 may be formed between the first and second reference planes. In some cases, the first reference plane may also extend through the respective central portions of the openings 2210 within the first boss 2205.

[0098] The first riser paths 1513 and 1515 may also be formed within a supply housing 601 having a substantially tubular and cylindrical configuration and may be fluidly connected between the first gas passages 1503 and 1505 and the corresponding portions of the first annular plenum 1511. For example, the proximal ends of the first riser paths 1513 and 1515 may be fluidly connected to the respective first gas passages 1503 and 1505 by the corresponding second riser paths 1517 and 1519, and the distal ends of the first riser paths 1513 and 1515 may be fluidly connected to different portions of the first annular plenum 1511. According to some embodiments, the different portions of the first annular plenum 1511 may be located on diametrically opposed sides of the first annular plenum 1511, and the first reference plane may extend through these different portions. In this way, the first riser paths 1513 and 1515 may be spaced apart from each other by a distance of 1713 in a third direction perpendicular to the first direction. For example, the third direction may be perpendicular (or substantially perpendicular) to the first direction. In some cases, the first riser paths 1513 and 1515 may be equidistant (or substantially equidistant) from axis 1603 by a distance of 1715 in the third direction. For this purpose, the first riser paths 1513 and 1515 may have a length of 1717 in the first direction, and the second riser paths 1513 and 1519 may have a maximum height (or maximum length) of 1719 from the corresponding proximal ends of the first riser paths 1513 and 1515 in the first direction. In some implementations, the first reference plane may also extend through the central portions of the first riser paths 1513 and 1515, and axes 1709 and 1711 may form angles 1721 and 1723 corresponding to axis 1603. For illustrative purposes, angles 1721 and 1723 are shown with respect to axes 1709 and 1711, and axes 1709 and 1711 may extend parallel (or substantially parallel) to axis 1603.The angles 1721 and 1723 and the respective lengths 1805 of the first gas passages 1503 and 1505 may be configured such that the first gas passages 1503 and 1505 are formed symmetrically (or substantially symmetrically) with respect to a third reference plane defined by axes 1603 and 1609.

[0099] In various embodiments, the combination of the first gas passage 1503, the first riser passage 1513, and the second riser passage 1517 can together form a first flow path having a proximal end defined by the first gas inlet 1501 and a distal end connected to the first annular plenum 1511. Similarly, the combination of the first gas passage 1505, the first riser passage 1515, and the second riser passage 1519 can together form a second flow path having, in some embodiments, a proximal end defined by the first gas inlet 1501 and a different distal end connected to the first annular plenum 1511. Note that the first gas inlet 1501 may be spaced 1611 away from the second gas inlet 1507 in a fourth direction perpendicular to the first and third directions. In some implementations, the fourth direction may be perpendicular (or substantially perpendicular) to the first and third directions.

[0100] Similar to the second gas inlet 1507, the first gas inlet 1501 may be formed on the upper surface 2201 of the supply housing 601, but may be surrounded by a second recess 2211 within the first boss 2205. The second recess 2211 may be configured to support a gasket, such as an O-ring or any other suitable mechanical seal. The gasket may be configured to form a seal not only between the supply housing 601 and the PVM 205, but also around the first gas inlet 1501 when the PVM 205 is connected to the supply manifold assembly 203. In some implementations, the first boss 2205 may also include a third recess 2213 surrounding both the first recess 2203 and the second recess 2211. The third recess 2213 may be configured to support another gasket, at least partially. The gasket may be configured to form a seal not only between the supply housing 601 and the PVM 205, but also around corresponding gaskets at least partially supported within the first recess 2203 and the second recess 2211. As will become clearer below, buffer (or purge) gas may flow through the gas port 2215 into the region between the gasket associated with the third recess 2213 and the respective gaskets associated with the first recess 2203 and the second recess 2211. One or more fourth recesses within the first boss 2205, e.g., recesses 2217, 2219, 2221, and 2301, can facilitate the flow of buffer gas within this region and to the fifth recess 2223, which may be used to discharge buffer gas from the supply manifold assembly 203 or to transfer buffer gas to another component (e.g., the PVM 205). It should be noted that the buffer gas flowing between the gaskets associated with the first recess 2203, the second recess 2211, and the third recess 2213, respectively, may be used to prevent, or at least reduce, the infiltration of air pollutants not only into the first gas inlet 1501 and the second gas inlet 1507, but also into the flow paths associated with the PVM 205, which may be fluidly connected to the first gas inlet 1501 and the second gas inlet 1507.

[0101] The third gas inlet 1521 and the fourth gas inlet 1527 may be formed within the terminal surface 2601 of the notch 2225 in the supply housing 601. In some cases, the notch 2225 may allow the RPS valve 207 to be fluidly connected to the supply manifold assembly 203 via the third gas inlet 1521 and the fourth gas inlet 1527. In this way, the RPS valve 207 may be configured to adjust or otherwise control the flow of one or more reactants generated by the RPS to one or more of the third gas inlet 1521 and the fourth gas inlet 1527. In some cases, the flow of one or more reactants to at least one of the third gas inlet 1521 and the fourth gas inlet 1527 may coincide with one or more flows of first process gases, one or more flows of second process gases, one or more flows of purge gases, and / or one or more flows of cleaning gases through one or more of the first gas passages 1503 and 1505 and the second gas passage 1509.

[0102] In some embodiments, the third gas inlet 1521 may be fluidly connected to the first gas passages 1503 and 1505 via the third gas passages 1523 and 1525. For example, the third gas inlet 1521 may form the proximal end of the third gas passage 1523, and the distal end of the third gas passage 1523 may be in fluid communication with the first gas passage 1503. The proximal end of the third gas passage 1525 may be fluidly connected to the first gas passage 1503, and the distal end of the third gas passage 1525 may be in fluid communication with the first gas passage 1505. In some implementations, the third gas passages 1523 and 1525 may be coaxially aligned and extend in the third direction. It should also be noted that the third gas passages 1523 and 1525 may be offset from axis 1605 by a distance of 1613 in the fourth direction and offset from the central portion of the radial path 1601 by a distance of 1725 in the second direction. Similarly, the second gas passage 1509 may be fluidly connected to the fourth gas inlet 1527 via the fourth gas passage 1529. The central axis 1615 of the fourth gas passage 1529 may not only form an angle 1617 with axis 1609, but may also intersect axis 1603 in the central portion of the second gas passage 1509. In some cases, the fourth gas passage 1529 may be offset from the central portion of the radial path 1601 by a distance of 1727 in the second direction. The distance 1727 may be less than the distance 1725, but the embodiment is not limited thereto. For example, the distance 1727 may be greater than or equal to the distance 1725.

[0103] Paying particular attention to Figure 26, the terminal surface 2601 may also include a recess 2603 which may be configured to at least partially support a gasket when the RPS valve 207 is connected to the supply housing 601 using one or more fasteners. In some embodiments, the recess 2603 may surround not only a third gas inlet 1521 and a fourth gas inlet 1527, but also buffer gas ports 2607 and 2609 which may be used to flow buffer gas in and out of the area corresponding to the fifth annular plenum 1927, as will become clearer below.

[0104] In some embodiments, the opening 2605 may be configured to connect to fasteners used to connect the RPS valve 207 to the supply housing 601. One or more third thermal resistors (e.g., third thermal resistor 227) may be positioned between the supply manifold assembly 203 and the RPS valve 207 to reduce the contact area and heat transfer between the supply manifold assembly 203 and the RPS valve 207. In some embodiments, the third thermal resistor 227 may be coaxially aligned with the opening 2605 and may include a corresponding opening through which fasteners used to connect the RPS valve 207 to the supply housing 601 may extend. One or more of the openings 2605 may also serve as mounting points during the manufacturing of the supply housing 601. For example, one or more of the openings 2605 may be used to mount the supply housing 601 to a rack, which may be used to immerse the supply housing 601 in an aqueous solution as part of a plating process, such as an electroless nickel plating process, which induces a catalytic reaction that causes metal ions (e.g., nickel ions) to plate or otherwise deposit a metallic material onto the surface of the supply housing 601 exposed to the aqueous solution. In some cases, two diagonally opposite openings within the openings 2605 may be used to mount the supply housing 601 to the rack in an inclined orientation such that the mating flange 211 is on a raised portion higher than the upper surface 2201. Such orientation can allow gases, such as hydrogen gas, generated during the plating process to easily escape from one or more mechanisms inside the supply housing 601, such as holes 2701, 2703, 2705, 2707, and 2709, the first riser paths 1513 and 1515, the second riser paths 1517 and 1519, the first gas passages 1503 and 1505, and the second gas passage 1509. This may enable more uniform and defect-free plating of the supply housing 601.

[0105] Referring to Figures 12 and 27, the supply housing 601 may include holes 2701, 2703, 2705, 2707, and 2709 aligned coaxially (or substantially coaxially) with the shaft 1603. In some cases, the maximum dimensions (e.g., diameters) of holes 2701, 2703, 2705, 2707, and 2709 may decrease as the distance from the mating flange 211 increases. In other words, the maximum dimension of hole 2701 may be larger than the maximum dimension of hole 2703, and the maximum dimension of hole 2703 may then be larger than the maximum dimension of hole 2705. Furthermore, the maximum dimension of hole 2705 may be larger than the maximum dimension of hole 2707, and the maximum dimension of hole 2707 may be larger than the maximum dimension of hole 2709. When assembled as part of the supply manifold assembly 203, various parts of the supply insert 603 may be received in the corresponding parts of holes 2701, 2703, 2705, 2707, and 2709. However, it should be noted that the terminal surfaces 2711 in the transition region between holes 2701 and 2703 and the terminal surface 2713 in the transition region between holes 2707 and 2709 of the supply housing 601 can prevent the supply insert 603 from being inserted further into the supply housing 601 than desired. For example, the top surface 2801 and the transition surface 2803 of the supply insert 603 can abut against the terminal surfaces 2711 and 2713, respectively, to prevent the supply insert 603 from translating further into the supply housing 601. In some cases, one or more fasteners may be used in relation to the opening 2805 in the supply insert 603 and the opening 2401 in the supply housing 601 to connect the supply insert 603 concentrically (or substantially concentrically) within the supply housing 601. In some cases, at least one of the openings 2805 and 2401 may be threaded and configured to engage with the aforementioned fasteners by screw.To facilitate the alignment of the supply insert 603 within the supply housing 601, the supply insert 603 and the supply housing 601 may include alignment openings 2807 and 2403, respectively, configured to receive the respective ends of alignment dowels, which may extend in a second direction from the supply insert 603 to the supply housing 601 when the components are assembled together.

[0106] Before addressing the additional features of the supply insert 603, it should be noted that the supply housing 601 may also include a fifth gas inlet 1901 formed in a recess 2231 of the outer surface 2233. The fifth gas inlet 1901 may extend radially inward toward the axis 1603 and may be fluidly connected to sixth gas passages 1903 and 1905. The sixth gas passage 1905 may extend in a first direction along the axis 1603 and may be fluidly connected to a concave region 2717 of the terminal surface 2711. The additional features of the concave region 2717 will be described later, but it may generally be used to form a first connection passage 1907.

[0107] Returning to the supply insert 603, the distal end of the opening 2805 may be recessed into a notch 2809 of the supply insert 603 to allow the corresponding head of a fastener connecting the supply insert 603 to the supply housing 601 to be offset in a second direction from the lower surface 2811 of the supply insert 603. This may allow the upper surface 609_1 of the second thermal resistor 609 to contact the lower surface 2811 of the supply insert 603 and the lower surface 2227 of the supply housing 601, respectively, when the second thermal resistor 609 is incorporated as part of the supply manifold assembly 203. In some cases, the second thermal resistor 609 may also include one or more notches 609_2 configured to expose the opening 2229 of the lower surface 2227 of the supply housing 601. The central opening 609_3 of the second thermal resistor 609 may be configured to receive at least a portion of a boss 2901 (which may protrude in a first direction from the lower surface 2811 of the supply insert 603) when the second thermal resistor 609 is assembled as part of the supply manifold assembly 203. Furthermore, the lower surface WA09_4 of the second thermal resistor 609 may connect with the mating surface 213 of the shower head 201 when incorporated as part of the gas distribution assembly 200.

[0108] When the supply insert 603 is assembled as part of the supply manifold assembly 203, the axis 2813 of the supply insert 603 may be aligned (or substantially aligned) coaxially with the axis 1603 of the supply housing 601, and portions of the supply insert 603 may be received in corresponding portions of the supply housing 601. For example, a first portion 2815 of the supply insert 603 may be received in holes 2703, 2705, and 2707 of the supply housing 601, and a second portion 2817 of the supply insert 603 may be received in hole 2701 of the supply housing 601. Furthermore, a projection 2819 extending in a second direction from the upper surface 2801 of the supply insert 603 may extend at least partially into hole 2709 of the supply housing 601, and the proximal end 2821 of the projection 2819 is spaced 1807 in a second direction from the distal end 1701 of the second gas passage 1509.

[0109] In various embodiments, the configuration and juxtaposition of the upper surface 2801 and projection 2819 of the supply insert 603 and the inner surface of the hole 2709 of the supply housing 601 may be configured to form a first annular plenum 1511 surrounding a second gas passage 1509 having a radial path 1601 extending between the distal end 1701 of the second gas passage 1509 and the proximal end of the projection 2819. In some cases, the first annular plenum 1511 may have a diameter 1619 and a height 1729 in a second direction, as well as an arched upper inner surface 2715. It should also be noted that the radial path 1601 may be vertically centered (or substantially centered) within the first annular plenum 1511 such that the central axis of the radial path 1601 is offset by a distance 1809 in a second direction from the lower surface of the first annular plenum 1511. The lower surface of the first annular plenum 1511 may be formed by the upper surface 2801 of the supply insert 603. In some cases, the distance 1809 may be half (or substantially half) of the height 1729, but the embodiments are not limited thereto.

[0110] The outer surface 2823 of the first portion 2815 of the supply insert 603 may include at least one circumferentially extending groove 2825 configured therein to at least partially support one or more gaskets. When assembled as part of the supply manifold assembly 203, one or more gaskets can be compressed between the inner surface of the hole 2707 of the supply housing 601 and the end surface 2827 of the groove 2825 to form at least one seal that seals and surrounds the first annular plenum 1511. As will become clearer below, buffer gas can flow at least into the second annular plenums 1909, 1911, and 1913 to form a secondary seal outside the gasket at least partially supported in the groove 2825. This secondary seal may be configured to prevent, or at least reduce, the penetration of air pollutants (e.g., moisture, undesirable gases, etc.) into the flow paths in at least the first annular plenum 1511, the radial path 1601, and the second gas passage 1509.

[0111] In some embodiments, the supply insert 603 may define or otherwise include a fifth gas passage 1531 extending in a first direction along the axis 2813. The fifth gas passage 1531 may have a tubular frustoconical configuration having a height 1731 and a side wall 3201 that tapers at an angle 1733 from the proximal end 2821 of the supply insert 603 to the first gas outlet 1533, so that the diameter 3203 of the fifth gas passage 1531 at the proximal end 2821 is smaller than the diameter 3205 of the fifth gas passage 1531 at the first gas outlet 1533. The fifth gas passage 1531 may be fluidly connected to both the first annular plenum 1511 and the second gas passage 1509 via a radial path 1601. For this purpose, the proximal end 2821 of the fifth gas passage 1531 may be sealed within the first annular plenum 1511 by one or more gaskets at least partially supported in the groove 2825 when the supply insert 603 is incorporated as part of the supply manifold assembly 203. The buffer gas flowing into at least the second annular plenums 1909, 1911, and 1913 can also prevent, or at least reduce, the infiltration of air pollutants (e.g., moisture, undesirable gases, etc.) into the flow path within the second gas passage 1509.

[0112] The distal end of the fifth gas passage 1531 (or the first gas outlet 1533) may be fluidly connected to the inlet of the central stem portion 215_1 of the distribution plenum 215 of the shower head 201 when the shower head 201 and the supply manifold assembly 203 are incorporated as part of the gas distribution assembly 200. The supply housing 601 may include at least one recess 2405 in the lower surface 2227 of a fitting flange 211 configured to at least partially support one or more gaskets therein. The recess 2405 may surround a hole 2701, as well as at least one shaft 1603 shown in Figure 24, which extends within the page. When the supply manifold assembly 203 is connected to the shower head 201, the gasket at least partially supported within the recess 2405 can be at least partially compressed between the shower head 201 and the end face of the recess 2405 to form a first seal that at least surrounds the third annular plenum 1917. Furthermore, the gasket 225 (see, for example, Figure 3) can be at least partially compressed between the shower head 201 and the lower surface 2811 of the supply insert 603 to form a second seal that at least surrounds the fifth gas passage 1531. As will become clearer below, a buffer gas may be flowed in at least the third annular plenum 1917 to prevent, or at least reduce, the penetration of air pollutants (e.g., moisture, undesirable gases, etc.) into the fifth gas passage 1531 and the flow path within the shower head 201. The third and fourth connecting passages 3101 and 3103 can not only allow buffer gas to flow between the gasket 225 and the gasket at least partially supported within the recess 2405, but can also allow buffer gas to flow into and out of the fourth annular plenum 1919, which may be formed laterally between the recess 2405 and the inner surface of the hole 2701 in the supply housing 601, and vertically between the lower surface 2227 of the mating flange 211 and the mating surface 213 of the shower head 201, when the shower head 201 and the supply manifold assembly 203 are incorporated as part of the gas distribution assembly 200.

[0113] The supply insert 603 may further include concave regions 2829 and 2831 within the transition surface 2803 that extends radially outward to the outer surface 2833 of the second portion 2817. In some cases, the concave region 2829 may extend more radially inward toward the axis 2813 than the concave region 2831, but the embodiments are not limited thereto. For example, the concave regions 2829 and 2831 may extend radially inward toward the axis 2813 by an equivalent (or substantially equivalent) amount. When incorporated as part of the supply manifold assembly 203, the concave regions 2829 and 2831 are configured to form (or at least partially form) a second connection passage 1915 and a fifth connection passage 1921, respectively, having terminal surfaces 2711 within the transition region between holes 2701 and 2703 of the supply housing 601. Similarly, the supply housing 601 may include a concave region 2717 within a terminal surface 2711 that extends radially inward toward the axis 1603 and is configured to form (or at least partially form) a first connection passage 1907 having a transition surface 2803 of the supply insert 603 when assembled with the supply insert 603. As will become clearer below, the first connection passage 1907, the second connection passage 1915, and the fifth connection passage 1921 may form part of one or more passages for buffer gas through the supply manifold assembly 203.

[0114] Similar to the opening 2605 of the supply housing 601, the supply insert 603 may include one or more openings 2903 within the lower surface 2811, extending in a second direction. The openings 2903 can function as mounting points during the manufacturing of the supply insert 603. For example, one or more of the openings 2903 may be used to mount the supply insert 603 to a rack, which may be used to immerse the supply insert 603 in an aqueous solution as part of a plating process, such as an electroless nickel plating process, which induces a catalytic reaction that causes metal ions (e.g., nickel ions) to plate or otherwise deposit a metallic material onto the surface of the supply insert 603 exposed to the aqueous solution.

[0115] In various embodiments, the supply manifold assembly 203 may be made from at least two components, for example, a supply housing 601 and a supply insert 603. When assembled, these components can be combined to define various flow paths and plenums of the supply manifold assembly 203, including a first flow path 1500 and a second flow path 1900. Such a configuration can simplify not only the manufacture of the inlet to the showerhead 201 but also the manufacture of its individual components or features. Furthermore, the materials used for each piece of the supply manifold assembly 203 may vary depending on the chemical composition of any precursors, reactants, reactants, purge gases, and / or other chemicals used during one or more processing operations or stages thereof. In some cases, the supply housing 601 and the supply insert 603 may be formed from similar or dissimilar materials. For example, the supply housing 601 may be formed from at least aluminum, and the supply insert 603 may be formed from at least a non-aluminum material such as tungsten. In some implementations, the supply housing 601 and supply insert 603 may be formed from the same material, such as aluminum. The supply manifold assembly 203 may instead be additively manufactured, cast, machined, and / or formed as a single block of material and / or from a single block of material, as in the case of similar components. In some cases, the supply housing 601 and supply insert 603 may have one or more coatings or plating layers, such as an electroless nickel plating layer, but any other material layer may be utilized.

[0116] In some implementations, the first thermal resistor 607, the second thermal resistor 609, and the third thermal resistor 227 may be formed from or include any suitable insulating material, such as at least one of ceramic materials (e.g., alumina, tungsten carbide, zirconia, etc.), glass materials, mica, polymer materials (e.g., polyamide, polyetherketone, polyethylene terephthalate, polyimide, polyphenylene sulfide, polyphthalamide, etc.), porcelain, quartz, etc. In some cases, the first thermal resistor 607, the second thermal resistor 609, and the third thermal resistor 227 may be formed from the same insulating material, or at least one of the first thermal resistor 607, the second thermal resistor 609, and the third thermal resistor 227 may be formed from different insulating materials. For example, the first thermal resistor 607 and the second thermal resistor 609 may be formed from a similar first insulating material (e.g., polyimide), and the third thermal resistor 227 may be formed from a second insulating material different from the first insulating material (e.g., zirconia), but the embodiments are not limited thereto.

[0117] As previously mentioned, the supply manifold assembly 203 may be used in connection with substrate processing operations such as ALD processes. In this way, the supply manifold assembly 203 may be configured to mix at least two of the following before introducing the mixture into at least one distribution plenum of the showerhead 201 (e.g., distribution plenum 215): one or more gases, one or more precursors, one or more reactants, etc.

[0118] For example, during the administration phase of the ALD process, one or more first gases (e.g., Ar+H2) may flow into the first gas inlet 1501 at a first mass flow rate via PVM205, and one or more second gases (e.g., Ar+NH3) may flow into the second gas inlet 1507 at a second mass flow rate. In some cases, the second mass flow rate may be smaller than the first mass flow rate, and the maximum dimensions (e.g., diameters) 1811 of the first gas passages 1503 and 1505 may be smaller than the maximum dimensions (e.g., diameters) 1813 of the second gas passage 1509. Referring to Figure 13, when the second gas flows along the second gas passage 1509 into the region corresponding to the radial path 1601, one or more of the first gases may be divided into multiple channels, for example, a first channel flowing into the first portion 1301 of the first annular plenum 1511 along the first gas passage 1503, the second riser path 1517, and the first riser path 1513, and a second channel flowing into the second portion 1303 of the first annular plenum 1511 along the first gas passage 1505, the second riser path 1519, and the first riser path 1515. In some cases, the components traversed by the first and second channels may be configured symmetrically (or substantially symmetrically) with respect to a third reference plane to provide equivalent (or substantially equivalent) inputs of the first gas to the first portion 13A01 and the second portion 1303 of the first annular plenum 1511. This may then help to rapidly and evenly fill the first annular plenum 1511 with the first gas, providing a symmetric (or substantially symmetric) radial flow of the first gas to the lateral flow of the second gas through the radial path 1601. The reduction in cross-sectional area from the first annular plenum 1511 to the radial path 1601 with respect to the central axis 1305 of the radial path 1601 can accelerate the flow of the first gas to the lateral flow of the second gas, at least in part, to cause more turbulent mixing between the first and second gases as the first and second gases flow from the radial path 1601 to the fifth gas passage 1531 and from the fifth gas passage 1531 to the central stem portion 215_1 of the distribution plenum 215 in, for example, the showerhead 201.It should be noted that the frustoconical configuration of the fifth gas passage 1531 can slow down the velocity of the gas mixture as it flows from the proximal end 2821 of the supply insert 603 to the first gas outlet 1533 and enters the central stem portion 215_1 of the distribution plenum 215 of the showerhead 201. This slowing of the gas may also help to facilitate the mixing of the first and second gases, as it may give the mixture more time to be uniformly distributed before being introduced into the central stem portion 215_1 of the distribution plenum 215 of the showerhead 201. This gas mixture can define the first process gas that is used to process the substrate 107 during the dosing phase of the ALD process.

[0119] During the RF pre-purge phase, a purge gas (e.g., Ar) may flow into the first gas inlet 1501 and the second gas inlet 1507, and in some implementations, the purge gas may also flow into the third gas inlet 1521 and the fourth gas inlet 1527. The purge gas introduced into the first gas inlet 1501 can purge at least the first flow path through the first gas passage 1503, the second riser passage 1517, the first riser passage 1513, and the first portion 1301 of the first annular plenum 1511, as well as the second flow path through the first gas passage 1505, the second riser passage 1519, and the first riser passage 1515, and into the second portion 1303 of the first annular plenum 1511. The purge gas introduced at the third gas inlet 1521 not only helps to purge each portion of the components defining the first and second flow paths and the first annular plenum 1511, but can also purge at least the third gas passages 1523 and 1525. The purge gas introduced at the second gas inlet 1507 can purge at least the second gas passage 1509. The direct alternating current of the purge gas from the second gas passage 1509, as well as the purge gas from the first annular plenum 1511 and the radial path 1601 to the fifth gas passage 1531, increases the turbulence of the purge gas in the fifth gas passage 1531, thereby effectively purging the fifth gas passage 1531 from the first process gas flowing along it during the dosing phase of the ALD process. From the fifth gas passage 1531, the purge gas flows into the showerhead 201, the processing chamber 101, and the exhaust (e.g., scrubbed exhaust) (e.g., continuously) to effectively purge the showerhead 201 and the processing chamber 101 of the first process gas before the conversion phase of the ALD process.

[0120] As part of the conversion phase, a diluent gas (e.g., Ar) may flow into the first gas inlet 1501, and a precursor (e.g., a molybdenum-containing precursor) encompassed with the carrier gas (e.g., Ar) may flow into the second gas inlet 1507. In some embodiments, reactants (e.g., fluorine radicals) from or of the dissociated cleaning gases generated by a remote plasma source may also flow into at least one of the third gas inlet 1521 and the fourth gas inlet 1527 via the RPS valve 207. Referring to Figure 14, as the carrier gas-encompassed precursor flows along the second gas passage 1509, reactants that can enter the fourth gas inlet 1527 may flow into the second gas passage 1509 through the fourth gas passage 1529, and mixing with the carrier gas-encompassed precursor flow can begin when the combination (hereinafter referred to as the "first gas combination") flows into the region corresponding to the radial path 1601. Furthermore, as the diluent gas flows along the first and second channels, reactants that may be introduced into the third gas inlet 1521 may flow into the first gas channels 1503 and 1505 through the third gas channels 1523 and 1525, respectively. In this way, the diluent gas and reactants can begin to mix to form a second gas combination when the first and second channels enter the first section 1301 and the second section 1303 of the first annular plenum 1511. Note that the diluent gas and reactants can continue to mix within the first annular plenum 1511 and the radial channel 1601 when the second gas combination flows from the second gas channel 1509 into the lateral flow of the first gas combination.Similar to the dosing stage of the ALD process, the reduction in cross-sectional area from the first annular plenum 1511 to the radial path 1601 with respect to the central axis 1305 of the radial path 1601 can accelerate the flow of the second gas combination to the lateral flow of the first gas combination, at least partially, to cause more turbulent mixing between the first gas combination and the second gas combination as the first gas combination and the second gas combination flow from the radial path 1601 to the fifth gas passage 1531 and from the fifth gas passage 1531 to the central stem portion 215 of the distribution plenum 215 in, for example, the showerhead 201. Similar to the dosing phase of the ALD process, the frustoconical configuration of the fifth gas passage 1531 can slow down the velocity of the mixture of the first and second gas combinations as the mixture flows from the proximal end 2821 of the feed insert 603 to the first gas outlet 1533 and enters the central stem portion 215_1 of the distribution plenum 215 of the showerhead 201. This slowing of the gases may also help to facilitate the mixing of the first and second gas combinations, as the mixture may have more time to be uniformly distributed before flowing into the central stem portion 215_1 of the distribution plenum 215 of the showerhead 201. These mixtures of the first and second gas combinations can define the second process gas used to process the substrate 107 during the conversion phase of the ALD process.

[0121] Following the conversion phase, the post-RF purge phase may be performed in the same manner as the pre-RF purge phase. To avoid obscuring the embodiments described herein, redundant descriptions of the flow of purge gas through the gas distribution assembly 200 in relation to the post-RF purge phase are omitted.

[0122] In one or more embodiments, various parameters and / or characteristics of the first gas passages 1503 and 1505, the second gas passage 1509, the first riser paths 1513 and 1515, the second riser paths 1517 and 1519, the first annular plenum 1511, the radial path 1601, and the fifth gas passage 1531 may be configured to individually and / or simultaneously promote and enhance the mixing of gases before introducing the first or second process gas into the central stem portion 215_1 of the distribution plenum 215 in the showerhead 201. For example, based on various studies of gas flow from the supply manifold assembly 203 into the central stem portion 215_1 of the distribution plenum 215 in the showerhead 201, and from the showerhead 201 onto the substrate 107, it has been determined that at least the following parameters affect the distribution (e.g., azimuthal distribution) of the component gases forming at least the first process gas onto the substrate 107. 1) the mixing length of the fifth gas passage 1531 (e.g., height 1731), 2) the taper angle of the side wall 3201 of the fifth gas passage 1531 (e.g., angle 1733), 3) the diameter of the first annular plenum 1511 (e.g., diameter 1619), 4) the depth of the first annular plenum 1511 (e.g., height 1729), 5) the position of the radial path 1601 (e.g., distance 1809), 6) the number and symmetry of the inlets from the first gas inlet 1501 to the first annular plenum 1511. 7) the orientation of the first gas passages 1503 and 1505, the first riser paths 1513 and 1515, and the second riser paths 1517 and 1519 with respect to axis 1603 (e.g., at least angles 1721 and 1723); 8) the axial length of the second gas passage 1509 (e.g., distance 1703); 9) the offset amounts of axes 1709 and 1711 of the first riser paths 1513 and 1515 with respect to axis 1603, respectively (e.g., distance 1715).

[0123] In some embodiments, the height 1731 may be approximately 2.7 inches to approximately 5.1 inches, such as approximately 2.7 inches to approximately 3.9 inches, approximately 3.7 inches to approximately 5.1 inches, or approximately 2.7 inches to approximately 3.3 inches. In some cases, the height 1731 may be approximately 3.3 inches to approximately 3.9 inches, approximately 3.9 inches to approximately 4.5 inches, or approximately 4.5 inches to approximately 5.1 inches. When the height 1731 is less than approximately 3.5 inches, the skew among at least one of the components of the first process gas (e.g., NH3) may deviate from the desired level. For example, the output of at least one of the components of the first process gas from the first riser of the distribution plenum 215 (e.g., riser 215_3 on the left in Figure 4) and the second riser of the distribution plenum 215 (e.g., riser 215_3 on the right in Figure 4) may have a difference of approximately 1% when the height 1731 is approximately 1.4 inches and a difference of approximately 0.5% when the height 1731 is approximately 3.4 inches. Between approximately 3.5 inches and approximately 4 inches, the difference may decrease to an acceptable level.

[0124] The angle 1733 can be approximately 0 to 4.5 degrees, for example, approximately 0 to 2.2 degrees, approximately 2.2 to 4.5 degrees, or approximately 0 to 1.1 degrees, depending on the implementation. In some cases, the angle 1733 can be approximately 1.1 to 2.2 degrees, approximately 2.2 to 3.4 degrees, or approximately 3.4 to 4.5 degrees. When the angle 1733 is less than approximately 1 degree, the skew between at least one of the components of the first process gas (e.g., NH3) may deviate from an acceptable level. For example, the output of one of the components of the first process gas from the first riser of the distribution plenum 215 (e.g., riser 215_3 on the left in Figure 4) and the second riser of the distribution plenum 215 (e.g., riser 215_3 on the right in Figure 4) may represent a difference of approximately 0.5% when the angle 1733 is approximately 0 to 1 degree. Between approximately 3.5 to 4 degrees, the difference may decrease to an acceptable level.

[0125] In some implementations, the diameter 1619 can be approximately 0.95 inches to 2.15 inches, 0.95 inches to 1.5 inches, 1.5 inches to 2.15 inches, 0.95 inches to 1.2 inches, 1.2 inches to 1.5 inches, 1.5 inches to 1.8 inches, or 1.8 inches to 2.15 inches. When the diameter 1619 is less than approximately 1.3 inches, the skew among at least one of the components of the first process gas (e.g., NH3) may deviate from an acceptable level. For example, the output of at least one of the components of the first process gas from the first riser of the distribution plenum 215 (e.g., riser 215_3 on the left in Figure 4) and the second riser of the distribution plenum 215 (e.g., riser 215_3 on the right in Figure 4) may have a difference of approximately 0.3% when the diameter 1619 is approximately 1.24 inches and a difference of approximately 0.08% when the diameter 1619 is approximately 1.35 inches. Between approximately 1.3 inches and approximately 1.5 inches, the difference may decrease to an acceptable level.

[0126] The height 1729 can be approximately 0.40 inches to 1.65 inches, 0.40 inches to 1 inch, 1 inch to 1.65 inches, 0.40 inches to 0.71 inches, 0.71 inches to 1 inch, 1 inch to 1.30 inches, or 1.30 inches to 1.65 inches, according to some examples. When the height 1729 is approximately 0.55 inches, there may be skew among at least one of the components of the first process gas (e.g., NH3). For example, the output of at least one of the components of the first process gas from the first riser of the distribution plenum 215 (e.g., riser 215_3 on the left in Figure 4) and the second riser of the distribution plenum 215 (e.g., riser 215_3 on the right in Figure 4) may have a difference of approximately 0.08% when the height 1729 is approximately 0.53 inches and a difference of approximately 0.02% when the height 1729 is approximately 0.80 inches. However, it should be noted that the difference may decrease as the height 1729 increases from approximately 0.8 inches to approximately 1.65 inches. Between approximately 0.65 inches and approximately 0.95 inches, the difference may be at an acceptable level.

[0127] According to one or more embodiments, the distance 1809 may be between approximately 0 inches and approximately 1729 inches in height of the first annular plenum 1511. When the distance 1809 is approximately half the height 1729, it has been observed that the skew between at least one of the components of the first process gas (e.g., NH3) in the diametrically opposed risers within the riser 215_3 of the distribution plenum 215 may be at or near the minimum level.

[0128] In various implementations, the number of symmetric (or substantially symmetric) inlets from the first gas inlet 1501 to the first annular plenum 1511 can be 2, 3, 4, 5, 6, etc. For example, when one inlet to the first annular plenum 1511 is used, the skew between at least one of the components of the first process gas (e.g., NH3) in the diametrically opposed risers in the riser 215_3 of the distribution plenum 215 may be approximately 0.20%, while when two inlets are used, the skew is approximately 0.17%.

[0129] Angles 1721 and 1723 may, according to some embodiments, be approximately 0 to 20 degrees, approximately 0 to 10 degrees, approximately 10 to 20 degrees, approximately 0 to 5.7 degrees, approximately 5.7 degrees to 10 degrees, approximately 10 to 15 degrees, or approximately 15 to 20 degrees. When angles 1721 and 1723 are greater than 0 degrees, such as approximately 12 degrees, skew may exist between at least one of the components of the first process gas (e.g., NH3), such as a difference of approximately 0.17% between diametrically opposed risers in the risers 215_3 of the distribution plenum 215. When angles 1721 and 1723 are approximately 0 degrees, the skew may be reduced to a difference of approximately 0.05%. With this in mind, various embodiments include first gas passages 1503 and 1505 inclined at an angle of about 9 to about 13 degrees from a first gas inlet 1501, first riser paths 1513 and 1515 extending normal (or substantially normal) from a first annular plenum 1511, and second riser paths 1517 and 1519 configured as transitions from the first gas passages 1503 and 1505 to the first riser paths 1513 and 1515, respectively.

[0130] In some embodiments, the distance 1703 may be between approximately 0.95 inches and approximately 1.55 inches, approximately 0.95 inches and approximately 1.2 inches, approximately 1.2 inches and approximately 1.55 inches, approximately 0.95 inches and approximately 1.1 inches, approximately 1.1 inches and approximately 1.2 inches, approximately 1.2 inches and approximately 1.4 inches, or approximately 1.4 inches and approximately 1.55 inches. When the distance 1703 is less than approximately 0.95 inches, there may be a skew between at least one of the components of the first process gas (e.g., NH3), such as a difference of approximately 0.35% between diametrically opposed risers in the risers 215_3 of the distribution plenum 215. However, as the distance 1703 increases between approximately 1.25 inches and approximately 1.45 inches, the skew may decrease to a difference of approximately 0.20%.

[0131] In one or more implementations, the distance 1715 may be approximately 0.25 inches to approximately 0.75 inches, approximately 0.25 inches to approximately 0.5 inches, approximately 0.5 inches to approximately 0.75 inches, approximately 0.25 inches to approximately 0.38 inches, approximately 0.38 inches to approximately 0.5 inches, approximately 0.5 inches to approximately 0.62 inches, or approximately 0.62 inches to approximately 0.75 inches. When the distance 1715 is less than approximately 0.5 inches, skew may exist between at least one of the components of the first process gas (e.g., NH3), such as a difference of approximately 0.10% between diametrically opposed risers in the riser 215_3 of the distribution plenum 215. However, as the distance 1715 increases beyond approximately 0.5 inches, the skew may decrease to a difference of approximately 0.03%.

[0132] In some embodiments, when each of the aforementioned parameters is configured as described above, at least each of the components of the first process gas may be uniformly (or substantially uniformly) mixed before being introduced into the central stem portion 215_1 of the distribution plenum 215 of the showerhead 201. This may enable more uniform deposition, etching, etc., than conventional gas distribution techniques, by utilizing the gas distribution assembly 200, including the supply manifold assembly 203.

[0133] As previously stated, the supply manifold assembly 203 may also receive an input of buffer (or purge) gas at the fifth gas inlet 1901, which may be used to form one or more gas seals that can prevent, or at least reduce, the infiltration of air pollutants (e.g., moisture, undesirable gases, etc.) into the flow paths between the supply manifold assembly 203 and adjacent components such as the showerhead 201, PVM 205, and RPS valve 207, as well as the first flow path 1500 of the supply manifold assembly 203.

[0134] For example, referring at least to Figures 19–21, the buffer gas may be introduced into the supply manifold assembly 203 through a fifth gas inlet 1901 and flow through a first connecting passage 1907 along sixth gas passages 1903 and 1905. From the first connecting passage 1907, the buffer gas can flow into and fill second annular plenums 1909, 1911, and 1913 defined in the negative space between the supply housing 601 and the supply insert 603. In this way, the buffer gas can flow into a gasket at least partially supported within the groove 2825, not only purging any potential air pollutants from the second annular plenums 1909, 1911, and 1913, but also preventing, or at least reducing, the possibility of, air pollutants penetrating into, for example, at least one of the second gas passage 1509, the first annular plenum 1511, and the fifth gas passage 1531.

[0135] From the second annular plenums 1909, 1911, and 1913, buffer gas can flow into the third annular plenum 1917 through the second connecting passage 1915 and fill it, each of which may also be defined within the negative space between the supply housing 601 and the supply insert 603. As the buffer gas flows through the third annular plenum 1917, it can also flow into the fourth annular plenum 1919, for example, through the third connecting passage 3101 and between the gasket 225 and the gasket at least partially supported within the recess 2405, and fill it. Note that the third connecting passage 3101 and the fourth annular plenum 1919 may be formed within the negative space between the supply manifold assembly 203 and the showerhead 201. As described above, the gasket 225 and the gasket, at least partially supported within the recess 2405, can be at least partially compressed between the supply manifold assembly 203 and the showerhead 201 to form a seal surrounding the first gas outlet 1533 and at least the third annular plenum 1917. In this way, the buffer gas can not only purge any potential air pollutants from at least the third annular plenum 1917, the fourth annular plenum 1919, and the third connection passage 3101, but can also prevent, or at least reduce, the possibility of, air pollutants penetrating into, for example, the first gas outlet 1533, the third annular plenum 1917, and the central stem portion 215_1 of the distribution plenum 215 of the showerhead 201.

[0136] In some embodiments, buffer gas from the fourth annular plenum 1919 may flow back into the third annular plenum 1917 through the fourth connection passage 3103, which may be formed in the negative space between the supply manifold assembly 203 and the showerhead 201, similar to the third connection passage 3101. From the third annular plenum 1917, buffer gas may flow into the seventh gas passages 1923 and 1925 through the fifth connection passage 1921. The seventh gas passages 1923 and 1925 may be fluidly connected to the fifth annular plenum 1927 via the buffer gas port 2607. The buffer gas within the fifth annular plenum 1927 may flow between gaskets 2611 and 2613, which are at least partially supported within the recess 2603, and gaskets 2611 and 2613 may surround the third gas inlet 1521 and the fourth gas inlet 1527, respectively, and may be at least partially compressed between the supply manifold assembly 203 and the RPS valve 207 when the supply manifold assembly 203 and the RPS valve 207 are incorporated as part of the gas distribution assembly 200. Thus, the fifth annular plenum 1927 may be formed in the negative space between the supply manifold assembly 203 and the RPS valve 207. In this way, the buffer gas can not only purge any potential air pollutants from at least the fourth connecting passage 3103, the seventh gas passages 1923 and 1925, and the fifth annular plenum 1927, but can also prevent, or at least reduce, the possibility of, air pollutants penetrating into, for example, the third gas inlet 1521, the fourth gas inlet 1527, and the corresponding outlets of the RPS valve 207 corresponding to the third gas inlet 1521 and the fourth gas inlet 1527.

[0137] The buffer gas may exit from the fifth annular plenum 1927 through a buffer gas port 2609, which in some implementations may be fluidly connected to eighth gas passages 1929 and 1931 and a seventh connecting passage 1933 within the supply housing 601. The distal end of the seventh connecting passage 1933 may allow the buffer gas to flow into and fill the sixth annular plenum 1935, as well as to flow between the gasket supported in the third recess 2213 and the gaskets in the first recess 2203 and the second recess 2211, respectively. The sixth annular plenum 1935 may be formed in the negative space between the supply manifold assembly 203 and the PVM 205. In this way, the buffer gas can not only purge any potential air pollutants from at least the eighth gas passages 1929 and 1931, the seventh connecting passage 1933, and the sixth annular plenum 1935, but can also prevent, or at least reduce, the possibility of, air pollutants penetrating to, for example, the first gas inlet 1501, the second gas inlet 1507, and the corresponding outlets of the PVM 205 corresponding to the first gas inlet 1501 and the second gas inlet 1507.

[0138] From the sixth annular plenum 1935, buffer gas may flow through the second gas outlet 1937 to the PVM 205 for exhaust, for example, for exhaust into the atmosphere, or optionally for exhaust into a cleaned exhaust section. Thus, one or more embodiments allow for a constant (or substantially constant) flow of buffer gas through the second flow path 1900, which can be used to prevent, or at least reduce, the infiltration of air pollutants into the flow path between the supply manifold assembly 203 and one or more adjacent components such as the showerhead 201, the PVM 205, and / or the RPS valve 207, as well as the first flow path 1500 of the supply manifold assembly 203.

[0139] Some implementations of the supply housing and its internal gas passages may differ from those described above. In some embodiments, the first gas passage may not extend along the central axis of the supply housing, e.g., axis 1603, but instead may be oriented at an acute angle to the central axis. For example, referring to Figure 16, when viewed along axis 1603, the second gas inlet 1507 is directly above the distal end 1701 so that they overlap and both are aligned with axis 1603. In contrast, the first gas inlet 1501 is offset from axis 1603 along the transverse axis 1609 so that the first gas passage is at an acute angle to axis 1603. In some other embodiments, the positions of the first and second gas inlets may be swapped so that the first gas inlet is aligned with the central axis, e.g., 1603, and the second gas inlet is offset from the central axis along the transverse axis.

[0140] Figure 34 depicts cross-sectional views of a supply assembly according to various embodiments. This supply manifold assembly 203B may be similar to the supply manifold assembly 203 described above, but with the differences shown. The figure is also taken along the cutting line 12-12 of Figure 8, and some internal aspects of the housing differ as shown. Here, the cross-sectional slice is taken along the central axis 1603B of the gas supply housing 601B, and the central axis 1603B may be the same as the axis 1603 described above. Furthermore, the central axis 1603B may be considered collinear with the central axis of the fifth gas passage 1531 / 1531B provided herein. As can be seen from the figure, the distal end 1701B of the second gas passage 1509B is located on or along the central axis 1603B, but the second gas inlet 1507B is not located along the central axis 1603B, and the second gas passage 1509B is not located along the central axis 1603B. Instead, the first gas inlets 1501B of the first gas passages 1503B and 1505B are located on the central axis 1603B, and the first gas passages 1503B and 1505B extend within this plane taken along axis 1603B. In these embodiments, referring back to Figure 23, the first gas inlet 1501B is at the position of the second gas inlet 1507, and the second gas inlet 1507B is at the position of the first gas inlet 1501.

[0141] Figure 35 schematically shows perspective views of the first flow path of the supply manifold assembly of Figure 34 in several embodiments. Figures 36–38 schematically show orthographic projections of the first flow path of Figure 34 in several embodiments. In these figures, some of the same part numbers are used, and such features may be the same as or similar to those described above. Furthermore, some of the same part numbers are later used with a "B" to indicate that these features may be similar but different from the same part numbers and elements described above. The first flow path 1500B may include a first gas inlet 1501B, first gas passages 1503B and 1505B, a second gas inlet 1507B, a second gas passage 1509B, a first annular plenum 1511, a third gas inlet 1521B, third gas passages 1523B and 1525B, a fourth gas inlet 1527B, a fourth gas passage 1529B, a fifth gas passage 1531, a first gas outlet 1533, and a tenth gas inlet 1599B. In some cases, these passages may not be considered to have riser paths, although in some other examples, the straight portions of the first gas passage 1503B, the second gas passage 1505B, and the third gas passage 1509B may be considered riser paths, respectively.

[0142] The third gas inlet 1521B is fluidly connected to the first gas passage 1505B via the third gas passage 1525B, and the tenth gas inlet 1599B is fluidly connected to the third gas passage 1523B and the first gas passage 1503B. The fourth gas inlet 1527B is fluidly connected to the second gas passage 1509B via the fourth gas passage 1529B.

[0143] A third gas inlet 1521B, a fourth gas inlet 1527B, and a tenth gas inlet 1599B may be formed in the end face 2601 of a notch 2225 within the supply housing 601B. In some cases, the notch 2225 may allow the RPS valve 207 to be fluidly connected to the supply manifold assembly 203B via the third gas inlet 1521B, the fourth gas inlet 1527B, and the tenth gas inlet 1599B. In this way, the RPS valve 207 may be configured to adjust or otherwise control the flow of one or more reactants generated by the RPS to one or more of the third gas inlet 1521B, the fourth gas inlet 1527B, and the tenth gas inlet 1599B. In some cases, the flow of one or more reactive species to at least one of the third gas inlet 1521B, the fourth gas inlet 1527B, and the tenth gas inlet 1599B may coincide with one or more flows of first process gases, one or more flows of second process gases, one or more flows of purge gases, and / or one or more flows of cleaning gases through one or more of the first gas passages 1503B and 1505B and the second gas passage 1509B. The first and second gas passages may be in different orientations, but they are configured to allow gases to flow through them and to receive radical species via the RPS in one of the ways described above.

[0144] It should be noted that the first gas inlet 1501B may be spaced 1611B away from the second gas inlet 1507B, either traversing the first and third directions, or in a fourth direction perpendicular to the central axis 1603B and axis 1605, or along axis 1609. In some implementations, the fourth direction may be perpendicular (or substantially perpendicular) to the first and third directions. According to some embodiments, the third gas passages 1523B and 1525B may be offset 1613B1 and 1613B2 in the fourth direction from axis 1605B, and 1725B and 1717B, respectively, in the second direction (or along axis 1603) from the central portion of the radial path 1601. In some embodiments, the fourth gas passage 1529B may be offset from the central portion of the radial path 1601 by a distance of 1727B in the second direction (or along axis 1603).

[0145] As described above, the second gas passage 1509B and the second gas inlet 1507B of the supply housing 601B may be configured differently from those of the supply housing 601B. As shown in Figures 35 to 38, the distal end of the second gas inlet 1507B, or the second gas passage 1509B, is offset from the distal end 1701B in a first direction, for example, parallel to axis 1603B, and in a second direction, for example, perpendicular to axis 1603B or parallel to the transverse axis 1609 in Figure 36. In contrast, in the case of the supply housing 601, the distal end of the second gas inlet 1507, or the second gas passage 1509, may be considered to be offset from the distal end 1701 in the first direction rather than the second direction in some embodiments, and the second gas passage 1509 extends along axis 1603, but the second gas passage 1509B does not. In some such implementations, the second gas passage 1509 may have a central axis that is collinear with the central axis of the fifth gas passage 1531, for example, as shown in Figures 12 and 18. As shown in Figure 38, the second gas passage 1509B has a central axis 1801B that is not collinear with the axis 1603B, i.e., the central axis of the fifth gas passage 1531. The central axis 1801B of the second gas passage 1509B is oriented at an acute angle 1803B with respect to the axis 1603B, i.e., the central axis of the fifth gas passage 1531.

[0146] Furthermore, as shown in Figures 34 to 38, the first gas inlet 1501B may be positioned along the central axis 1603B. For example, in Figures 36 and 38, the first gas inlet 1501B is positioned along or on the central axis 1603 of the supply housing 601B. The second gas inlet 1507B is offset by an offset distance of 1611B from the first gas inlet 1501B and the central axis 1603B. In contrast, the first gas inlet 1501 of the housing 601 is aligned with the central axis 1603.

[0147] In some implementations, as shown in Figure 37, the first reference plane may extend through the central portions of the first gas passages 1503B and 1505B, and the axes 1709B and 1711B may form angles 1721B and 1723B corresponding to axis 1603B. For illustrative purposes, angles 1721B and 1723B are shown with respect to axes 1709B and 1711B, and they may extend parallel (or substantially parallel) to axis 1603. The angles 1721B and 1723B of the first gas passages 1503B and 1505B, as well as their respective lengths, may be configured such that the first gas passages 1503B and 1505B are formed symmetrically (or substantially symmetrically) with respect to a third reference plane defined by axes 1603B and 1609B.

[0148] As shown in Figure 38, the second gas passage 1509B may be oriented at an angle 1803B with respect to the axis 1603B and may have a length 1805B. In some such implementations, the second reference plane may extend in a direction perpendicular to the extension direction of the first reference plane. For example, the angle 1803B may be formed between the first reference plane and the second reference plane.

[0149] The configuration of the supply housing 601B is also configured to facilitate the mixing of various gases and mixtures, similar to Figures 13 and 14 above. Figures 39 and 40 schematically show detailed views of part 13B of Figure 34 in several embodiments. For example, in Figure 39, when a second gas flows along the second gas passage 1509B into the region corresponding to the radial path 1601, one or more first gases may be divided into multiple flow paths, for example, a first flow path that flows along the first gas passage 1503B into the first part 1301 of the first annular plenum 1511, and a second flow path that flows along the first gas passage 1505B into the second part 1303 of the first annular plenum 1511. In some cases, the components traversed by the first and second flow paths may be configured symmetrically (or substantially symmetrically) with respect to a third reference plane in order to provide equivalent (or substantially equivalent) inputs of the first gas to the first portion 1301 and the second portion 1303 of the first annular plenum 1511. This may then help to rapidly and evenly fill the first annular plenum 1511 with the first gas and provide a symmetrical (or substantially symmetrical) radial flow of the first gas to the lateral flow of the second gas through the radial path 1601.

[0150] In another example, referring to Figure 40, when a precursor encompassed with the carrier gas flows along the second gas passage 1509B, a reactant that can enter the fourth gas inlet 1527B may flow into the second gas passage 1509B via the fourth gas passage 1529B, and when the combination (hereinafter referred to as the "first gas combination") flows into the region corresponding to the radial path 1601, mixing with the flow of the precursor encompassed with the carrier gas can begin. Also, when the diluent gas flows along the first and second passages, a reactant that can enter the third gas inlet 1521B and the tenth gas inlet 1599B (not shown here) may flow into the first gas passages 1503B and 1505B via the third gas passages 1523B and 1525B, respectively. In this way, the diluent gas and reactant species can begin to mix to form a second gas combination when the first and second channels enter the first portion 1301 and the second portion 1303 of the first annular plenum 1511.

[0151] In the case of the supply housing 601B shown in Figures 34 to 40, for example, by swapping the positions of the first gas inlet 1501B and the second gas inlet 1507B compared to Figures 12 to 18, different gases can flow into the first annular plenum 1511 and the radial path 1601. For example, in the implementation configurations shown in Figures 12 to 18, the first gas flows into the first annular plenum 1511 through the first gas inlet 1501 and the first gas passages 1503 and 1505, and then into the radial path 1601. The second gas flows through the second gas inlet 1507 and then flows into the radial path 1601 through the second gas passage 1509 along the central axis 1603. By using the supply housing 601B shown in Figures 34-40, the first gas flows directly into the radial passage 1601 instead of the first annular plenum 1511 via the second gas passage 1509B, and the second gas flows directly into the first annular plenum 1511 and then into the radial passage 1601. This configuration of the supply housing 601B can provide gas mixing more advantageously without the need to change the upstream gas source or supply line. The configurations of the supply housings 601 and 601B allow two different gases to flow into different parts of the assembly to provide different mixing options without changing other aspects of the upstream tools of assembly 203 / 203B.

[0152] In some implementations, the supply insert may be configured differently from that provided above. For example, the fifth gas passage may be offset below the top surface of the insert and fluidly connected to a plurality of gas passages configured to fluidly connect to an annular gas passage. Figure 41 schematically shows a cross-sectional view of another supply manifold assembly in some embodiment. Here, the supply insert 603B defines, or otherwise includes, a fifth gas passage 1531B extending in a first direction along axis 1603C, which may be the same as axis 1603 and 1603B. The fifth gas passage 1531B has a proximal end 1534B offset below the top surface 2821B of the supply insert 603B. The fifth gas passage 1531B also has a first gas outlet 1533B. The supply insert 603B has a plurality of ninth gas passages 4197B and 4195B extending through the top surface 2801B of the supply insert 603B. These ninth gas passages 4197B and 4195B fluidize the proximal end 1534B of the fifth gas passage 1531B to another environment, such as the first annular plenum 1511, when connected to one of the supply housings provided herein, such as 601 and 601B.

[0153] Figure 42 schematically shows cross-sectional views of the supply insert of Figure 41 in several embodiments. As can be seen here, the fifth gas passage 1531B has a proximal end 1534B offset by a distance 4198B below the upper surface 2821B of the supply insert 603B. In contrast, the fifth gas passage 1531 of the supply insert 603 has its proximal end 2821 at the same position as the upper part of the supply insert 603. The fifth gas passage 1531B also has a first gas outlet 1533B. The supply insert 603B also has a number of ninth gas passages 4197B and 4195B extending through the upper surface 2801B of the supply insert 603B.

[0154] The fifth gas passage 1531B may have a tubular, frustoconical configuration, having a height of 1731B and a side wall 3201B that tapers at an angle of 1733 from the proximal end 1534B to the first gas outlet 1533B such that the diameter 3203B of the fifth gas passage 1531B at the proximal end 1534B is smaller than the diameter 3205B of the fifth gas passage 1531B at the first gas outlet 1533B. As described herein, the fifth gas passage 1531B may be fluidly connected to the first annular plenum 1511 via a ninth gas passage. The distal end of the fifth gas passage 1531B (or the first gas outlet 1533B) may be fluid-connected to the inlet of the central stem portion 215_1 of the distribution plenum 215 of the shower head 201 when the shower head 201 and the supply manifold assembly 203 are incorporated as part of the gas distribution assembly 200, as provided above.

[0155] The supply insert 603B may be used with either the supply housing 601 or 601B. When the supply insert 603B is assembled as part of the supply manifold assembly 203 or 203B, the shaft 2813B of the supply insert 603B may be coaxially aligned (or substantially coaxially aligned) with the shaft 1603 / 1603B of the supply housing 601 / 601B, and portions of the supply insert 603B are received in corresponding portions of the supply housing 601 / 601B. For example, the first portion 2815 of the supply insert 603B may be received in holes 2703, 2705, and 2707 of the supply housing 601 / 601B, and the second portion 2817 of the supply insert 603B may be received in hole 2701 of the supply housing 601 / 601B. Furthermore, a projection 2819 extending in a second direction from the upper surface 2801 of the supply insert 603B may at least partially extend into the hole 2709 of the supply housing 601 / 601B, and the proximal end 2821 / 2821B of the projection 2819 is spaced 1807 in a second direction from the distal end 1701 of the second gas passage 1509.

[0156] In various embodiments, the configuration and juxtaposition of the upper surface 2801B and projection 2819 of the supply insert 603B and the inner surface of the hole 2709 of the supply housing 601 / 601B may be configured to form a first annular plenum 1511B that surrounds the second gas passage 1509 and has a radial path 1601B extending between the distal end 1701 / 1701B of the second gas passage 1509 / 1509B and the proximal end of the projection 2819. In some cases, the first annular plenum 1511B may have a diameter 1619 and a height 1729 in a second direction, as well as an arched upper inner surface 2715. It should also be noted that the radial path 1601B may be vertically centered (or substantially centered) within the first annular plenum 1511B such that the central axis of the radial path 1601 is offset by a distance of 1809 in a second direction from the lower surface of the first annular plenum 1511B. The lower surface of the first annular plenum 1511B may be formed by the upper surface 2801 of the supply insert 603B. In some cases, the distance 1809 may be half (or substantially half) of the height 1729, but the embodiments are not limited thereto.

[0157] When using the supply insert 603B, the gas flowing through the supply housing and supply insert may differ from that described above. For example, the proximal end 1534B of the fifth gas passage 1531B is not located immediately adjacent to the radial passage 1601, as shown in Figures 12 to 14. The gas flows from the first annular plenum 1511B through the ninth gas passages 4197B and 4195B to the fifth gas passage 1531B. Figure 43 schematically shows a detailed view of part 43 of Figure 41 in several embodiments. Here, the second gas passage 1509B is fluidly connected to the radial passage 1601B, which extends between the first annular plenum 1511B and the second gas passage 1509B. The radial path 1601B may also be partially defined by the radial upper surface 4296 and the lower surface 4294B, which may be the upper surface 2821B of the supply insert 603B. The upper surface 2821B of the supply insert 603B may be a plane through which there are no gas passages, such as the fifth gas passage 1531B extending. Unlike Figures 12–14, the fifth gas passage 1531B does not extend directly to the radial path 1601B. As shown in Figure 43, the second gas passage 1509B and the fifth gas passage 1531B do not intersect at the radial path 1601B, for example, in contrast to Figures 12–14. The distal end 1701B of the second gas passage terminates at the radial path 1601B, and the proximal end 1534B of the fifth gas passage 1531B terminates at the ninth gas passage 4197B. In Figures 12 to 14, the distal end 1701 of the second gas passage 1509 terminates at the radial path 1601, and the proximal end of the fifth gas passage 1531 also terminates at the radial path 1601.

[0158] As shown in Figure 43, the gas flowing into the radial path 1601B through the second gas passage 1509B is carried radially outward through the radial path 1601B and flows into the first annular plenum 1511B. In other words, the supply insert 603B is configured to carry gas radially outward from the radial path 1601B, and the supply insert 603 is configured to have a gas flow radially inward. Furthermore, in Figure 43, the gas flowing through the first gas passages 1505B and 1503B also flows into the first annular plenum 1511B, where mixing of gases, mixtures, and / or radical species takes place within the first and second gas passages 1503B, 1505B, and 1509B, respectively. Gases and / or radical species in the first annular plenum 1511B exit through the ninth gas passages 4197B and 4195B into the fifth gas passage 1531B. When the gas and / or radical species flow enters the fifth gas passage 1531B through the ninth gas passages 4197B and 4195B, further mixing of these flows may occur within the ninth gas passages 4197B and 4195B and / or the fifth gas passage 1531B. In some such implementations, the gas and / or radical species in the second gas passage 1509B flow through a flow extending from the distal end 1701B of the second gas passage 1509B to the radial path 1601B, and then radially outward into the first annular plenum 1511B, where mixing with other gases and / or species from the first gas passages 1503B and 1505B takes place, and then flows into the ninth gas passages 4197B and 4195B, and then into the fifth gas passage 1531B, thereby flowing into the fifth gas passage 1531B. The second gas passage 1509B may be considered to be fluidly connected to the fifth gas passage 1531B by this flow path, and it may be considered an indirect fluid connection. For example, in Figures 12 to 14, the second gas passage 1509 may be considered to be fluidly connected to the fifth gas passage 1531 only by the radial path 1601.

[0159] In some implementations, as further shown in Figures 41 and 43, the first annular plenum 1511B surrounds the second gas passage 1509B but does not surround the fifth gas passage 1531B. Furthermore, the ninth gas passages 4197B and 4195B are fluidly interposed between the first annular plenum 1511B and the fifth gas passage 1531B, and the first annular plenum 1511B is fluidly interposed between the radial passage 1601B and the ninth gas passages 4197B and 4195B. The ninth gas passages 4197B and 4195B may also be oriented acutely with respect to the central axis 1603B.

[0160] Figures 41 and 43 show the supply insert 603B together with the supply housing 601B, although the supply insert 603B may be used with the supply housing 601 shown in Figures 12–14. When used with the supply housing 601, the gas flowing through the second gas passage 1509 flows again into the radial passage 1601B, which causes the gas to flow radially outward through the radial passage 1601B and into the first annular plenum 1511B. The gas flowing through the first gas passages 1503 and 1505 and their other components such as risers 1513 and 1515 flows directly into the annular plenum 1511B. The gas and other species within the first annular plenum 1511B flow from the first annular plenum 1511B into the ninth gas passages 4197B and 4195B, then into the fifth gas passage 1531, and then out through the outlet 1533.

[0161] The outer surface 2823 of the first portion 2815 of the supply insert 603B may include at least one circumferentially extending groove 2825 configured therein to at least partially support one or more gaskets. When assembled as part of the supply manifold assembly 203C, one or more gaskets can be compressed between the inner surface of the hole 2707 of the supply housing 601 and the end surface 2827 of the groove 2825 to form at least one seal that seals and surrounds the first annular plenum 1511. As described herein, buffer gas can flow at least into the second annular plenums 1909, 1911, and 1913 to form a secondary seal outside the gasket at least partially supported in the groove 2825. This secondary seal may be configured to prevent, or at least reduce, the penetration of air pollutants (e.g., moisture, undesirable gases, etc.) into the flow paths in at least the first annular plenum 1511, the radial path 1601, and the second gas passage 1509.

[0162] Multi-station processing tool Figure 33 schematically illustrates a multi-station processing tool in several embodiments.

[0163] In some implementations, the multi-station processing tool 3300 may include an inbound load lock 3303 and an outbound load lock 3305, either or both of which may include a plasma source and / or an ultraviolet (UV) source. At atmospheric pressure, the robot 3307 is configured to move a wafer from a cassette loaded through a pod 3309 to the inbound load lock 3303 via an atmospheric port 3311. The wafer 107 is placed by the robot 3307 on a pedestal 3313 within the inbound load lock 3303, the atmospheric port 3311 is closed, and the inbound load lock 3303 is pumped down. In examples where the inbound load lock 3303 includes a remote plasma source, the wafer 107 may be exposed to remote plasma processing within the inbound load lock 3303 before being introduced into the processing chamber 3315. Furthermore, the wafer 107 may be heated in an inbound load lock 3303 to remove, for example, moisture and adsorbed gases. Next, a chamber transfer port 3317 to the processing chamber 3315 is opened, and another robot 3319 places the wafer 107 into the reactor on the pedestal of the first station, which is shown inside the reactor for processing. While the implementation configuration depicted in Figure 33 includes a load lock, it will be understood that in some implementation configurations, direct entry of the wafer 107 into the processing station may be provided.

[0164] As shown in Figure 33, the processing chamber 3315 includes four processing stations numbered 1 through 4. Each station has a pedestal, a gas distributor, and a supply manifold assembly (e.g., supply manifold assembly 203 in Figure 6) providing at least one gas line inlet. It will be understood that in some cases each processing station may have different or multiple purposes. For example, in some embodiments, a processing station may be switchable between chemical vapor deposition (CVD) processing mode and PECVD processing mode. In another example, the deposition operation, e.g., the PECVD operation, may be performed at one station, and exposure to UV radiation for UV curing may be performed at another station. In some cases, deposition and UV curing may be performed at the same station. Furthermore, although the processing chamber 3315 is shown to include four stations, the embodiments are not limited thereto. For example, the processing chamber 3315 may have five or more stations, or any appropriate number of stations, such as three or fewer stations.

[0165] As previously stated, the multi-station processing tool 3300 may include a wafer handling system (e.g., a robot 3319 including a spider fork 3301) for transporting and / or positioning wafers within the processing chamber 3315. In some embodiments, the wafer handling system can transport wafers between various processing stations and / or between processing stations and load locks. However, it is conceivable that any suitable wafer handling system, such as a wafer carousel or other wafer handling robot, may be used. Furthermore, the multi-station processing tool 3300 may include (or be otherwise coupled to) a system controller 3323 used to control the processing conditions and hardware state of the multi-station processing tool 3300. The system controller 3323 may include one or more memory devices 3325, one or more mass storage devices 3327, and one or more processors 3329. Each processor 3329 may include a central processing unit (CPU) or computer, analog and / or digital input / output connections, a stepper motor controller board, etc.

[0166] In some embodiments, the system controller 3323 controls each of the activities of the multi-station processing tool 3300. For example, the system controller 3323 may execute system control software 3331, which is stored in a mass storage device 3327, loaded into a memory device 3325, and executed by a processor 3329. Alternatively, the control logic may be hardcoded within the system controller 3323. For these purposes, application-specific integrated circuits (ASICs), programmable logic devices (e.g., field-programmable gate arrays (FPGAs)), etc., may be used. Wherever the terms “software” or “code” are used in the following description, functionally equivalent hardcoded logic may be used instead. The system control software 3331 may include instructions for controlling timing, gas mixture, gas flow rate, chamber and / or station pressure, chamber and / or station temperature, wafer temperature, target power level, RF power level, substrate pedestal, chuck and / or susceptor position, and other parameters of a particular process performed by the multi-station processing tool 3300. The system control software 3331 may be configured in any suitable manner. For example, various process tool component subroutines or control objects may be written to control the behavior of process tool components used to execute various process tool processes. The system control software 3331 may be coded in any suitable computer-readable programming language.

[0167] In some embodiments, the system control software 3331 may include input / output control (IOC) sequencing instructions for controlling the various parameters described above. In some embodiments, other computer software and / or programs stored in the mass storage device 3327 and / or memory device 3325 associated with the system controller 3323 may be used. Examples of programs or sections of programs for this purpose include substrate positioning programs, process gas control programs, pressure control programs, heater control programs, cooler control programs, and plasma control programs.

[0168] The substrate positioning program may include program code for process tool components used to load and orient the wafer 107 onto the pedestal 3321 and to control the spacing between the wafer 107 and other parts of the multi-station processing tool 3300.

[0169] The process gas control program controls the gas composition (e.g., silicon-containing gas, oxygen-containing gas, nitrogen-containing gas, dilution (or inert) gas, etc.) and flow rate, and may optionally include code to flow the gas into one or more processing stations before deposition to stabilize the pressure within the processing stations. The pressure control program may include code to control the pressure within the processing stations, for example, by adjusting throttle valves in the processing station's exhaust system, gas flow to the processing stations, etc.

[0170] The heater control program may include code for controlling current to one or more heating units (e.g., heating elements incorporated as part of the pedestal and / or shower head, heating jacket 605, etc.) used to heat the pedestal (e.g., pedestal 3321), shower head (e.g., shower head 201), supply manifold assembly 203, etc., of the processing chamber 3315, thereby heating one or more gases flowing from the wafer 107 and / or supply manifold assembly 203. Additionally or alternatively, the heater control program may control the supply of a heat transfer gas (such as helium) to a gas distributor and thereby to the wafer 107.

[0171] The cooling control program may include code for controlling the flow rate of a conductive cooling fluid through a cooling unit used to extract heat from the pedestal (e.g., pedestal 3321) and / or showerhead (e.g., showerhead 201) of the processing chamber 3315, thereby transferring such thermal energy to, for example, a waste heat capture, storage, recycling, and / or disposal system. The flow of cooling fluid through the cooling unit may also extract heat from the wafer 107.

[0172] The plasma control program may include code for setting the RF power levels applied to process electrodes in one or more processing stations in various configurations.

[0173] The pressure control program may include code for maintaining the pressure inside the reaction chamber in various ways.

[0174] In some embodiments, a user interface may be provided in conjunction with the system controller 3323. The user interface may include a display screen, a graphical software display of the device and / or processing conditions, and user input devices such as a pointing device, keyboard, touchscreen, and microphone.

[0175] In some embodiments, the parameters adjusted by the system controller 3323 may relate to processing conditions. Non-limiting examples include the composition and flow rate of the process gas, temperature, pressure, plasma conditions (such as RF bias power level), pressure, and temperature. These parameters may be provided to the user in the form of a recipe, which may be entered using a user interface.

[0176] Signals for monitoring the process may be provided by analog and / or digital input connections to the system controller 3323 from various process tool sensors. Signals for controlling the process may be output to analog and / or digital output connections to the multi-station process tool 3300. Non-exclusive examples of process tool sensors that may be monitored include mass flow controllers, pressure sensors (such as pressure gauges), thermocouples, etc. Appropriately programmed feedback and control algorithms may be used in conjunction with data from sensors to maintain processing conditions.

[0177] The system controller 3323 can provide program instructions to perform one or more of the processes described above. These program instructions can control various process parameters such as DC power levels, RF bias power levels, pressure, and temperature. The instructions can control parameters to operate the deposition of the stress compensation layer film stack according to various characteristics.

[0178] The system controller 3323 typically includes one or more memory devices and one or more processors configured to execute instructions so that the device performs several modes of operation. In some cases, a machine-readable medium containing instructions for controlling various modes of process operation may be coupled to the system controller 3323.

[0179] In some embodiments, the system controller 3323 may be part of a system, and the system may be part of at least one of the examples described above. Such a system may include semiconductor processing equipment, which may include one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (e.g., wafer pedestals, gas flow systems, thermal management systems, etc.). The systems described above may be integrated with electronic equipment to control their operation before, during, and / or after processing of semiconductor wafers or substrates. The electronic equipment may be called a “controller” that can control various components or sub-components of one or more systems. For example, depending on the processing requirements and / or the type of system, the system controller 3323 may be programmed to control any of the processes disclosed herein, including the supply of process gas, temperature setting (e.g., heating and / or cooling), valve operation, light source control for radiant heating, pressure setting, vacuum setting, power setting, RF generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid supply setting, position and operation setting, and wafer transfer between a tool or chamber and other transfer tools and / or load lock connected to or interfaced with a particular system. In this way, the system controller 3323 may be configured to control various actuators and motors of the back-side wafer processing system, among other systems.

[0180] Broadly speaking, the system controller 3323 may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurement, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the system controller 3323 in the form of various individual settings (or program files) that define operating parameters for a semiconductor wafer or system, or for performing a specific process therefor. Operating parameters may, in some embodiments, be part of a recipe defined by a process engineer to achieve one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, dies, etc., of a wafer.

[0181] In some implementations, the system controller 3323 may be part of or coupled to a computer, which may be integrated into, coupled to, or otherwise networked to the system, or a combination thereof. For example, the system controller 3323 may be in the “cloud” or be all or part of a fab host computer system, which may enable remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a fabrication operation, investigate the history of past fabrication operations, investigate trends or performance metrics from multiple fabrication operations, change the parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network which may include a local network or the internet. The remote computer may include a user interface which allows input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data which specify parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being executed and the type of tool to which the controller is configured to interface or control. Therefore, as stated above, the system controller 3323 may be distributed, for example, by including one or more separate controllers that are networked together and operate toward common purposes such as the processes and control described herein. An example of a distributed controller for such purposes is one or more integrated circuits on a chamber communicating with one or more remotely located integrated circuits (at the platform level or as part of a remote computer, for example) coupled to control the processes on the chamber.

[0182] Without limitation, exemplary systems may include plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and / or any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0183] As described above, depending on one or more process steps performed by the tool, the system controller 3323 may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, neighboring tools, adjacent tools, tools located throughout the factory, the main computer, another controller, and / or tools used for material transport to carry wafer containers to and from tool locations and / or load ports in the semiconductor manufacturing plant.

[0184] Additional and / or alternative forms Unless otherwise specified, the illustrated embodiments should be understood as providing exemplary features of various details of several embodiments. Accordingly, unless otherwise specified, various illustrated features, components, modules, layers, films, regions, embodiments, structures, etc. (hereinafter referred to individually or collectively as one or more “elements”) may be combined, separated, replaced, and / or rearranged in other ways without departing from the teachings of this disclosure.

[0185] The terms used herein are for the purpose of describing, and not limiting, certain aspects. The singular forms “a,” “an,” and “the” as used herein also include the plural forms unless the context clearly indicates otherwise. Phrases such as “for each of one or more <items>” and “each <item> of one or more <items>” should be understood, when used herein, to include both single and multiple item groups; that is, the phrase “for each…” should be understood to mean that, regardless of which set of items is being referred to, it is used in the programming language to refer to each of those items. For example, if the set of items being referred to is a single item, “each” refers only to that single item, and does not imply that at least two of those items must exist (even though the lexicon definition of “each” is often defined as a term referring to “one of two or more things”). Similarly, the terms “set” or “subset” should not be considered by themselves to necessarily encompass multiple items; a set or subset can encompass only one member or more members (unless the context indicates otherwise). The terms “comprises,” “comprising,” “includes,” and / or “including,” as used herein, specify the presence of a described feature, integer, step, action, element, component, and / or group thereof, but do not exclude the presence or addition of one or more other features, integers, steps, actions, elements, components, and / or groups thereof. Furthermore, it should be noted that the terms “substantially,” “approximately,” “about,” and other similar terms as used herein are used as approximations, not as terms of degree, and are therefore used to describe inherent deviations in measurements, calculations, and / or values ​​provided that would be recognized by those skilled in the art.Therefore, as used herein, terms such as “substantially,” “approximately,” and “about” mean within 5% of the referenced value unless otherwise specified. For example, substantially perpendicular means within ±5% of parallel.

[0186] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify the boundaries between adjacent elements. Therefore, the presence or absence of cross-hatching or shading, unless otherwise specified, does not convey or indicate any preference or requirement regarding specific materials, material properties, dimensions, proportions, commonalities between illustrated elements, and / or any other features, attributes, or characteristics of the elements. Furthermore, in the accompanying drawings, the size and relative size of elements may be exaggerated for clarity and / or explanatory purposes. Therefore, the size and relative size of each element are not necessarily limited to those shown in the drawings. Where different embodiments may be implemented, a particular process sequence may be performed differently from the sequence described. For example, two consecutively described processes may be performed substantially simultaneously, or in the reverse order of the described sequence.

[0187] When an element such as a layer is said to be “on,” “connected to,” or “joined to” another element, it may be directly on, directly connected to, or directly joined to the other element, and there may be at least one intervening element. However, when an element is said to be “directly on,” “directly connected to,” or “directly joined to” another element, there is no intervening element. Other terms and / or phrases used herein to describe relationships between elements should be interpreted in the same way as “between” vs. “directly between,” “adjacent” vs. “directly adjacent,” “on” vs. “directly on.” Furthermore, the term “connected” may refer to physical connections, electrical connections, and / or fluid connections. For this purpose, and for the purposes of this disclosure, the phrase “fluidly connected” is used with respect to volumes, plenums, holes, etc., that may be connected to each other, either directly or through one or more intervening components or volumes, in order to form a fluid connection, in the same way that the phrase “electrically connected” is used with respect to components that are connected to form an electrical connection. The phrase "fluidically intervening" may be used to refer to a component, volume, plenum, hole, etc. that is fluidically connected to at least two other components, volumes, plenums, holes, etc., such that a fluid flowing from one of those components, volumes, plenums, holes, etc., to the other or another of those components, volumes, plenums, holes, etc., first flows through the "fluidically intervening" component before reaching the other or another of those components, volumes, plenums, holes, etc. For example, if a pump is fluidically intervening between a reservoir and a outlet, the fluid flowing from the reservoir to the outlet will first flow through the pump before reaching the outlet. The phrase "fluidically adjacent," when used, refers to the arrangement of a fluid element to another fluid element such that there is no potential fluidically intervening structure between the two elements that could potentially obstruct the fluid flow between the two fluid elements.For example, in a flow path having a first valve, a second valve, and a third valve arranged continuously along it, the first valve is fluidically adjacent to the second valve, the second valve is fluidically adjacent to both the first and third valves, and the third valve is fluidly adjacent to the second valve.

[0188] For the purposes of this disclosure, “at least one of X, Y, ..., and Z” and “at least one selected from the group consisting of X, Y, ..., and Z” may be interpreted as X only, Y only, ..., Z only, or any combination of two or more of X, Y, ..., and Z, such as XYZ, XYY, YZ, and ZZ. The term “and / or” as used herein includes one or any combination of the relevant enumerated items.

[0189] In this specification, terms such as “first,” “second,” and “third” may be used to describe various elements, but these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, the first element described below may be called the second element without deviation from the teachings of this disclosure. For this purpose, the use of such identifiers, e.g., “first element,” should not be read as necessarily implicit or inherently suggesting the existence of another instance, e.g., “second element.” The use of sequential indicators in this disclosure and the appended claims, e.g., (a), (b), (c), ..., or (1), (2), (3), ..., should be understood as not conveying any particular order or sequence unless such order or sequence is explicitly indicated. For example, if there are three steps labeled (i), (ii), and (iii), it should be understood that, unless otherwise indicated, these steps may be performed in any order (or simultaneously, if not particularly contraindicated). For example, if step (ii) involves handling elements created in step (i), then step (ii) may be considered to occur at some point after step (i). Similarly, if step (i) involves handling elements created in step (ii), the reverse should be understood.

[0190] Spatially relative terms such as “directly below,” “down,” “below,” “downward,” “up,” “upper,” “directly above,” “above,” and “lateral” (e.g., “side wall”) are used herein for descriptive purposes and may be used to describe the spatial relationship of one element to at least one other element as shown in the drawings. Spatially relative terms are intended to encompass different orientations of the apparatus in use, operation, and / or manufacture, in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawing is turned upside down, an element described as being “below” or “directly below” another element or feature will be oriented “above” or “directly above” the other element or feature. Thus, the term “below” can encompass both up and down orientations. Furthermore, the apparatus may be oriented in other directions (e.g., rotated 90 degrees or in other directions), and therefore the spatially relative descriptors used herein are interpreted accordingly.

[0191] As used herein and in conjunction with ranges of values, the term “between” should be understood to include the start and end values ​​of that range unless otherwise specified. For example, between 1 and 5 should be understood to include the digits 1, 2, 3, 4, and 5, as well as the digits 2, 3, and 4. Furthermore, while specific examples, values, ranges, etc. are provided herein, other examples, values, ranges, etc. that are not expressly enumerated should be considered within the scope of this disclosure, including, as described above, the use of similar ratios, relationships, etc.

[0192] As used herein, the phrase “operably connected” should be understood to mean a state in which two components and / or systems are directly or indirectly connected such that, for example, at least one component or system can control the other. For example, a controller may be described as operably connected to a resistive heating unit, but the resistive heating unit includes a controller connected to a subcontroller of the resistive heating unit, the subcontroller is electrically connected to a relay, the relay is configured to controllly connect or disconnect the resistive heating unit to a power source capable of providing an amount of energy that can power the resistive heating unit to produce a desired degree of heating. The controller itself is unlikely to directly supply such power to the resistive heating unit due to the currents involved, but nevertheless, it should be understood that the controller is operably connected to the resistive heating unit.

[0193] As used herein, the singular forms “a,” “an,” and “the” also include the plural form unless the context clearly indicates otherwise. Furthermore, phrases such as “for each of one or more <items>” and “each <item> of one or more <items>” should be understood, when used herein, to include both single and multiple item groups; that is, the phrase “for each…” should be understood to mean that it is used in the programming language to refer to each item of whichever set of items is being referred to. For example, if the set of items being referred to is a single item, “each” refers only to that single item, and does not mean that at least two of those items must exist (even though the dictionary definition of “each” is often defined as a term referring to “one of two or more things”). Similarly, the terms “set” or “subset” should not be considered by themselves to necessarily include multiple items, and it should be understood that a set or subset can include only one member or more members (unless the context indicates otherwise). In addition, the terms “comprises,” “comprising,” “includes,” and / or “including,” as used herein, specify the presence of the described features, integers, steps, actions, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, actions, elements, components, and / or groups thereof.

[0194] Various embodiments are described herein with reference to cross-sectional views, isometric views, perspective views, plan views, and / or exploded views, which are schematic representations of idealized embodiments and / or intermediate structures. Therefore, deformations from the drawn shape, for example, as a result of manufacturing techniques and / or tolerances, are to be expected. Accordingly, embodiments disclosed herein should not be construed as being limited to specific illustrated shapes of areas, but should include, for example, shape deviations resulting from manufacturing. For this purpose, areas shown in the drawings may be schematic in nature, and the shapes of these areas may not reflect, and are therefore not limiting, the actual shapes of areas of the device.

[0195] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art in the field of which this disclosure is part. Terms such as those defined in commonly used dictionaries should be construed to have the meaning consistent with their meaning in the context of the relevant art, and should not be construed in an idealized or overly formal sense unless expressly defined herein.

[0196] As is customary in the art, several embodiments are described and illustrated in the accompanying drawings with respect to functional blocks, units, and / or modules. Those skilled in the art will understand that these blocks, units, and / or modules may be physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, hardwired circuits, memory elements, and wiring connections, and may be formed using semiconductor-based fabrication techniques or other manufacturing techniques. Where blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions described herein, and may optionally be driven by firmware and / or software. Each block, unit, and / or module may also be implemented by dedicated hardware, or as a combination of dedicated hardware for performing some functions and a processor (e.g., one or more programmed microprocessors and associated circuits) for performing other functions. Furthermore, each block, unit, and / or module in some embodiments may be physically separated into two or more interacting separate blocks, units, and / or modules without departing from the concept of the present invention. Furthermore, some embodiments of blocks, units, and / or modules may be physically combined into more complex blocks, units, and / or modules without departing from the teachings of this disclosure.

[0197] While the aforementioned embodiments have been described in some detail for the purpose of clarifying understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the attached claims. It should be noted that many alternative methods exist for implementing the processes, systems, and apparatus of the disclosed embodiments. Therefore, the embodiments should be considered illustrative and not limiting, and should not be limited to the details given herein. [Explanation of symbols]

[0198] 13 Part, 13B Part, 43 Part, 100 Substrate processing system, 101 Processing chamber, 103 Upper electrode, shower head, 105 Substrate support, 107 Substrate, wafer, 109 Supply manifold assembly, 111 Process volume, 113 Internal cavity, 115 RF generation system, 117 RF generator, 119 Coordinated distribution network, 121 Gas supply system, 123 Gas source, 125 Valve, 127 Mass flow controller, 129 Manifold, 131 Gas separation system, 133 Cleaning gas source, 135 Temperature controller, 137 Fluid supply system, 139 System controller, 141 Vacuum pump, 143 Closed-loop flow limiting device, 145 Robot, 147 Load lock, 200 Gas distribution assembly, 201 Gas distribution shower head, 203 Supply manifold assembly, 203B Supply manifold assembly, 203C 205 Supply manifold assembly, 207 Process gas valve manifold (PVM), 207 Remote plasma source (RPS) valve, 209 Backplate, 211 Mating flange, 213 Mating surface, 215 Distribution plenum, 215_1 Central stem section, 215_2 First spoke-like passage, 215_3 Riser, 215_4 Second spoke-like passage, 217 Distribution plenum, 219 Buffer gas inlet, 221 Output surface, 223 Gas distribution port, 225 Gasket, 227 Third thermal resistor, 301 Faceplate, 303 Support ring, 305 Manifold, 307 Backplate, 309 Fastener, 311 Distribution hub, 501 Virtual line, cycle, 601 Supply housing, 601B Gas supply housing, 603 Supply insert, 603B Supply insert, 605 Heating jacket, 605_1 Opening, 607 First thermal resistor, 607_1 First surface, 607_2 Second surface, 607_3 First opening, 607_4 Second opening, 609 Second thermal resistor, 609_1 Top surface, 609_2 Notch, 609_3 Central opening, 609_4 Bottom surface, 1301 First part, 1303 Second part, 1305 Central axis, 1500 First flow path, 1500B First flow path, 1501 First gas inlet, 1501B First gas inlet, 1503 First gas passage, 1503B First gas passage, 1505First gas passage, 1505B First gas passage, 1507 Second gas inlet, 1507B Second gas inlet, 1509 Second gas passage, 1509B Second gas passage, 1511 First annular plenum, 1511B First annular plenum, 1513 First riser passage, 1515 First riser passage, 1517 Second riser passage, 1519 Second riser passage, 1521 Third gas inlet, 1521B Third gas inlet, 1523 Third gas passage, 1523B Third gas passage, 1525 Third gas passage, 1525B Third gas passage, 1527 Fourth gas inlet, 1527B Fourth gas inlet, 1529 Fourth gas passage, 1529B Fourth gas passage, 1531 Fifth gas passage, 1531B Fifth gas passage, 1533 First gas outlet, 1533B First gas outlet, 1534B Proximal end, 1599B Tenth gas inlet, 1601 Radial path, 1601B Radial path, 1603 Axis, central axis, 1603B Axis, central axis, 1603C Axis, 1605 Axis, 1605B Axis, 1607 Axis, 1609 Axis, transverse axis, 1609B Axis, 1611 Distance, 1611B Distance, offset distance, 1613 Distance, 1613B1 Distance, 1613B2 Distance, 1615 Central axis, 1617 Angle, 1619 Diameter, 1701 Distal end, 1701B Distal end, 1703 Distance, 1705 Axis, 1707 Axis, 1709 Axis, 1709B Axis, 1711 Axis, 1711B Axis, 1713 Distance, 1715 Distance, 1717 Length, 1717B Distance, 1719 Maximum height, 1721 Angle, 1721B Angle, 1723 Angle, 1723B Angle, 1725 Distance, 1725B Distance, 1727 Distance, 1727B Distance, 1729 Height, 1731 Height, 1731B Height, 1733 Angle, 1801 Axis, 1801B Central axis, 1803 Angle, 1803B Angle, acute angle, 1805 Length, 1805B Length, 1807 Distance, 1809 Distance, 1811 Maximum dimension, 1813 Maximum dimension, 1900 Second flow path, 1901 Fifth gas inlet, 1903 Sixth gas passage, 1905 Sixth gas passage, 1907 First connecting passage, 1909 Second annular plenum, 1911 Second annular plenum, 1913 Second annular plenum, 1915 Second connecting passage, 1917 Third annular plenum, 1919Fourth annular plenum, 1921; Fifth connecting passage, 1923; Seventh gas passage, 1925; Seventh gas passage, 1927; Fifth annular plenum, 1929; Eighth gas passage, 1931; Eighth gas passage, 1933; Seventh connecting passage, 1935; Sixth annular plenum, 1937; Second gas outlet, 2201; Top surface, 2203; First recess, 2205; First boss, 2207; Opening, 2209; Second boss, 2210; Opening, 2211; Second recess, 2213; Third recess, 2215; Gas port, 2217; Recess, 2219; Recess, 2221; Recess, 2223; Fifth recess, 2225; Notch, 2227; Bottom surface, 2229; Opening, 2231; Recess, 2233; Outer surface, 2301 Recess, 2401 Opening, 2403 Opening, 2405 Recess, 2601 End surface, 2603 Recess, 2605 Opening, 2607 Buffer gas port, 2609 Buffer gas port, 2611 Gasket, 2613 Gasket, 2701 Hole, 2703 Hole, 2705 Hole, 2707 Hole, 2709 Hole, 2711 Terminal surface, 2713 Terminal surface, 2715 Upper inner surface, 2717 Recessed area, 2801 Top surface, 2801B Top surface, 2803 Transition surface, 2805 Opening, 2807 Alignment opening, 2809 Notch, 2811 Bottom surface, 2813 Shaft, 2813B Shaft, 2815 First part, 2817 Second part, 2819 Projection, 2821 Proximal end, 2821B Top surface, 2823 Outer surface, 2825 Groove, 2827 End surface, 2829 Concave region, 2831 Concave region, 2833 Outer surface, 2901 Boss, 2903 Opening, 3101 Third connecting passage, 3103 Fourth connecting passage, 3201 Side wall, 3201B Side wall, 3203 Diameter, 3203B Diameter, 3205 Diameter, 3205B Diameter, 3300 Multi-station processing tool, 3301 Spider fork, 3303 Inbound load lock, 3305 Outbound load lock, 3307 Robot, 3309 Pod, 3311 Atmospheric port, 3313 Pedestal, 3315 Processing chamber, 3317 Chamber transfer port, 3319 Robot, 3321 Pedestal, 3323 System Controller, 3325 Memory Device, 3327 Mass Storage Device, 3329 Processor, 3331 System Control Software, 4195BNinth gas passage, 4197B Ninth gas passage, 4198B Distance, 4294B Bottom surface, 4296 Radial top surface

Claims

1. A device configured to supply process gas to a gas distributor, wherein the device is A first gas passage having a first proximal end and a first distal end spaced apart from each other in a first direction, wherein the first proximal end defines a first gas inlet, A second gas passage fluidly connected to the first gas passage, wherein the second gas passage has a second proximal end spaced apart from the first distal end in the first direction, and a second distal end spaced apart from the second proximal end in the first direction, and the second distal end defines the first gas outlet. A first annular plenum surrounding the first gas passage and the second gas passage, A radial flow path extends between the first annular plenum and the first gas passage and the second gas passage, and fluidly connects the first annular plenum to the first gas passage and the second gas passage, A second gas inlet is located in a second direction perpendicular to the first direction and spaced apart from the first gas inlet, A plurality of third gas passages extending from the second gas inlet and fluidly connected to correspondingly different parts of the first annular plenum and A device equipped with the following features.

2. The first gas passage and the third gas passage are defined within the first body. The second gas passage is defined within the second body adjacent to the first body, The first annular plenum is defined by at least the opposing surfaces of the first body and the second body, The radial flow path is defined by at least the opposing surfaces of the first body and the second body. The apparatus according to claim 1.

3. The first main body is The first surface and A second surface facing the first surface in the first direction, A hole located on the second surface and coaxially aligned with the first gas passage, the hole extending in a third direction opposite to the first direction and terminating on a third surface located between the first surface and the second surface, A first projection extending from the third surface in the first direction and terminating at the fourth surface, wherein the fourth surface has the first distal end defined therein Equipped with, The aforementioned second main body, The fifth surface and A projection extending from the fifth surface in the third direction and terminating at the sixth surface, wherein the sixth surface has the second proximal end defined therein, A seventh surface facing the fifth surface in the first direction, wherein the seventh surface has the second distal end defined therein. Equipped with, The second body is at least partially supported within the hole, The fifth surface is spaced apart from the third surface in the first direction, The first annular plenum is defined by at least the third surface and the fifth surface, The radial flow path is defined by at least the fourth surface and the sixth surface. The apparatus according to claim 2.

4. The apparatus according to claim 1, wherein the cross-sectional area of ​​the second gas passage in a plane perpendicular to the first direction increases as the distance from the second proximal end increases.

5. The apparatus according to claim 1, wherein the second gas passage has a frustoconical shape.

6. The apparatus according to claim 1, wherein the first gas passage has a cylindrical configuration.

7. The fourth direction is perpendicular to the first and second directions, The first reference plane defined by the first direction and the fourth direction includes the central axis of the first gas passage, A second reference plane perpendicular to the first reference plane includes the central axis of the third gas passage. The apparatus according to claim 1.

8. The apparatus according to claim 7, wherein the third gas passage has a configuration symmetrical with respect to the first reference plane.

9. A plurality of first risers extending from the correspondingly different portions of the first annular plenum in a third direction opposite to the first direction. Furthermore, The first riser fluidly connects each of the third gas passages to the corresponding different portions of the first annular plenum. The apparatus according to claim 1.

10. Each first riser has an extension central axis in the third direction, Each third gas passage has an extension axis that is inclined with respect to the extension axis of the first riser to which it is fluidly connected. The apparatus according to claim 9.

11. Multiple second risers, each fluidly connecting a third gas passage to a corresponding first riser. The apparatus according to claim 9, further comprising:

12. A fourth gas passage is fluidly connected to the first gas passage between the first proximal end and the first distal end. Furthermore, The extension central axis of the fourth gas passage extends perpendicular to the second direction. The apparatus according to claim 1.

13. A fifth gas passage is fluidly connected to the third gas passage between the second gas inlet and the first distal end. Furthermore, The extension central axis of the fifth gas passage extends in a fourth direction perpendicular to the first and second directions. The apparatus according to claim 1.

14. A process gas valve manifold fluidly connected to the first gas inlet and the second gas inlet, wherein the process gas valve manifold is configured to regulate the flow of one or more gases to the first gas inlet and the second gas inlet, respectively. A first gasket surrounds and seals the first gas inlet in the apparatus, A second gasket surrounds the second gas inlet in the apparatus and seals the second gas inlet, A third gasket surrounds both the first gas inlet and the second gas inlet within the apparatus, forming a seal. The apparatus according to claim 1, further comprising:

15. When dependent on claim 3, A first thermal resistor interposed between the process gas valve manifold and the first body. The apparatus according to claim 14, further comprising:

16. When dependent on claim 12, A remote plasma source valve fluidly connected to the fourth gas passage and the fifth gas passage, wherein the remote plasma source valve is configured to regulate the flow of one or more reaction species to the corresponding proximal ends of the fourth gas passage and the fifth gas passage, respectively. A fourth gasket surrounds and seals the proximal end of the fourth gas passage within the apparatus, A fifth gasket surrounds and seals the proximal end of the fifth gas passage within the apparatus, A sixth gasket surrounds both the proximal end of the fourth gas passage and the proximal end of the fifth gas passage within the apparatus, forming a seal. The apparatus according to claim 13, further comprising:

17. When it depends on either claim 13 or claim 14, when it depends on claim 12, when it depends on claim 3, At least one second thermal resistor interposed between the first body and the remote plasma source valve The apparatus according to claim 16, further comprising:

18. A gas distributor having at least one gas distribution plenum fluidly connected to a plurality of gas distribution ports, wherein the at least one gas distribution plenum has a third gas inlet fluidly connected to the first gas outlet, A seventh gasket surrounds and seals the first gas outlet and the third gas inlet within the apparatus, An eighth gasket surrounds the seventh gasket in the apparatus and forms a seal. The apparatus according to claim 1, further comprising:

19. When dependent on claim 3, A third thermal resistor interposed between the gas distributor and each of the first and second main bodies. The apparatus according to claim 18, further comprising:

20. When dependent on claim 16, when dependent on claim 14, One or more sixth gas passages are fluidly connected to a first region between the third gasket and both the first and second gaskets, a second region between the sixth gasket and both the fourth and fifth gaskets, and a third region between the eighth gasket and the seventh gasket. A fourth gas inlet fluidly connected to one or more sixth gas passages, wherein the fourth gas inlet is configured to supply buffer gas to the first region, the second region, and the third region via one or more sixth gas passages. The apparatus according to claim 18, further comprising:

21. The apparatus according to claim 20, wherein the first region, the second region, and the third region are fluidly connected to one another.

22. When dependent on claim 2, A ninth gasket that surrounds and seals the first annular plenum within the apparatus, wherein the ninth gasket is at least partially compressed between the first body and the second body. The apparatus according to claim 20, further comprising:

23. The apparatus according to claim 22, when dependent on claim 21, wherein the one or more sixth gas passages are configured to flow the buffer gas from the fourth gas inlet to a fourth region surrounded by at least the ninth gasket, from the fourth region to the third region, from the third region to the second region, from the second region to the first region, and from the first region to the atmosphere of the apparatus.

24. The apparatus according to claim 1, wherein the first distal end is spaced apart from the first proximal end in the first and second directions.

25. The first gas passage defines a first central axis parallel to the first direction, The second gas passage defines a second central axis that lies on the same straight line as the first central axis. The apparatus according to claim 1.

26. The second gas passage defines a second central axis parallel to the first direction, The second gas inlet is positioned along the second central axis, The apparatus according to claim 1.

27. A device configured to supply process gas to a gas distributor, wherein the device is A first gas passage having a first proximal end and a first distal end spaced apart from each other along a first central axis, wherein the first proximal end defines a first gas inlet, A first annular plenum surrounding the first gas passage, A radial flow channel extending from the first annular plenum to the first gas passage, and fluidly connecting the first annular plenum to the first gas passage, A second gas passage having a second proximal end along a second central axis and a second distal end spaced apart from the second proximal end, wherein the second proximal end is spaced apart from the first distal end and the radial flow path along the second central axis, and the second distal end defines a first gas outlet. A plurality of fourth gas passages extending from the first annular plenum and the second proximal end, and fluidly connecting the first annular plenum and the second proximal end, wherein the fourth gas passages, the first annular plenum, and the radial passages are fluidly interposed between the first distal end and the second proximal end, A second gas inlet is spaced apart from the first gas inlet along a third axis perpendicular to the second central axis, A plurality of third gas passages extending from the second gas inlet and fluidly connected to correspondingly different parts of the first annular plenum and A device equipped with the following features.

28. The apparatus according to claim 27, wherein the second gas passage is fluidly connected to the first gas passage via a flow path that spans from the distal end of the first gas passage through the radial flow path, through the first annular plenum, and through at least one of the fourth gas passages.

29. The apparatus according to claim 27, wherein the second proximal end is offset from the first annular plenum along the second central axis.

30. The apparatus according to claim 27, wherein the first annular plenum does not surround the second gas passage.

31. The apparatus according to claim 27, wherein the radial flow path is at least partially defined by a circular base and an annular top offset from the circular base along a second axis.

32. The fourth gas passage is fluidly interposed between the second proximal end and the first annular plenum. The first annular plenum is fluidly interposed between the radial flow path and the fourth gas passage. The apparatus according to claim 27.

33. The apparatus according to claim 27, wherein each fourth gas passage extends along a corresponding fourth central axis oriented at an acute angle with respect to the second central axis.

34. The first distal end terminates in the radial flow path, The second proximal end terminates in the fourth gas passage. The apparatus according to claim 27.

35. The apparatus according to claim 27, having any of the features and limitations described in claims 2 to 26.

36. A device configured to supply process gas to a gas distributor, wherein the device is A first gas passage having a first proximal end and a first distal end spaced apart from each other along a first central axis, wherein the first proximal end defines a first gas inlet, A second gas passage fluidly connected to the first gas passage, wherein the second gas passage has a second proximal end and a second distal end spaced apart from the second proximal end along a second central axis, the second proximal end spaced apart from the first distal end along a second central axis, and the second distal end defines a first gas outlet. A first annular plenum surrounding the first gas passage, A radial flow channel is provided that spans between the first annular plenum and the first gas passage, and fluidly connects the first annular plenum to the first gas passage. A second gas inlet is spaced apart from the first gas inlet along a third axis perpendicular to the second central axis, A plurality of third gas passages extending from the second gas inlet and fluidly connected to correspondingly different parts of the first annular plenum and A device equipped with the following features.

37. The apparatus according to claim 36, wherein the first central axis is collinear with the second central axis.

38. The apparatus according to claim 37, wherein the second gas inlet is offset from the upper surface of the supply insert along the third axis.

39. The first annular plenum surrounds the first gas passage and the second gas passage. The radial flow path spans between the first annular plenum and the first gas passage and the second gas passage, and fluidly connects the first annular plenum to the first gas passage and the second gas passage. The apparatus according to claim 36.

40. The apparatus according to claim 36, wherein the first central axis is oriented at an acute angle with respect to the second central axis.

41. The apparatus according to claim 36, wherein the second gas inlet is arranged along the second central axis.

42. The apparatus according to claim 36, wherein the first gas inlet is spaced apart from the second central axis along the third axis.

43. The apparatus according to claim 36, further comprising a plurality of fourth gas passages extending from the first annular plenum to the second proximal end of the second gas passage.

44. The apparatus according to claim 43, wherein the second gas passage is fluidly connected to the first gas passage via a flow path that spans from the distal end of the first gas passage through the radial flow path, through the first annular plenum, and through at least one of the fourth gas passages.

45. The apparatus according to claim 43, wherein the second proximal end is offset from the first annular plenum along the second central axis.

46. The apparatus according to claim 45, wherein the first annular plenum does not surround the second gas passage.

47. The apparatus according to claim 43, wherein the radial flow path is at least partially defined by a circular base and an annular top offset from the circular base along a second axis.

48. The apparatus according to claim 43, wherein the radial flow path, the first annular plenum, and the fourth gas passage are fluidly interposed between the first distal end of the first gas passage and the second proximal end of the second gas passage.

49. The apparatus according to claim 43, wherein each fourth gas passage extends along a corresponding fourth central axis oriented at an acute angle with respect to the second central axis.

50. The apparatus according to claim 36, having any of the features and limitations described in claims 2 to 26.

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