Cycle deposition showerhead assembly with improved gas mixing

Abstract

A showerhead assembly configured to deliver multiple gases into a cycle deposition chamber comprises a showerhead having a vertical cavity formed through a central region and a main inner surface configured to face a substrate. The main inner surface radially surrounds the vertical cavity and is tapered such that the vertical distance from the substrate to the main inner surface decreases radially outward relative to the center of the substrate. The showerhead assembly further comprises an injector block assembly positioned above the showerhead to deliver gases from outside the cycle deposition chamber through the vertical cavity into the cycle deposition chamber. The showerhead assembly further comprises multiple gas channels formed within the injector block assembly.

Description

Cross - reference to Related Applications

[0001] All applications in which foreign or domestic priority claims are identified in the application data sheet filed together with this application are incorporated herein by reference in accordance with 37 CFR Section 1.57.

[0002] This application claims the benefit of priority under 35 U.S.C. § 119(e) to U.S. Provisional Patent Application No. 63 / 502,564, entitled "SHOWERHEAD ASSEMBLY FOR CYCLIC VAPOR DEPOSITION WITH ENHANCED GAS MIXING", filed on May 16, 2023, the content of which is hereby expressly incorporated herein by reference in its entirety.

Technical Field

[0003] The technology of the present disclosure generally relates to thin - film deposition systems, and more particularly to showerhead assemblies for cyclic vapor deposition systems.

Background Art

[0004] As semiconductor devices continue to scale in lateral dimensions, there is a corresponding scaling of the vertical dimensions of semiconductor devices, including the scaling of the thickness of functional thin films such as electrodes and dielectrics. Semiconductor manufacturing involves various thin films that are deposited and patterned throughout the process flow. The thin films used in semiconductor manufacturing can be formed using various techniques, including wet and dry deposition methods. Examples of wet deposition methods include aerosol / spray deposition, sol - gel methods, and spin coating. Examples of dry deposition methods include physical vapor - based techniques such as physical vapor deposition (PVD) and evaporation. Further examples of dry deposition methods include cycle deposition techniques based on precursors and / or chemical reactions, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Summary of the Invention

[0005] In one embodiment, a showerhead assembly configured to deliver multiple gases into a cycle deposition chamber comprises a showerhead having a vertical cavity formed through a central region and a main inner surface configured to face a substrate. The showerhead assembly further comprises an injector block assembly positioned above the showerhead to deliver gases from outside the cycle deposition chamber into the cycle deposition chamber through the vertical cavity. The showerhead assembly further comprises multiple gas channels formed within the injector block assembly and configured to allow gases to flow through the injector block assembly at least partially separately. The gas channels exiting the injector block assembly extend in different directions relative to each other and in different directions with respect to a vertical axis intersecting the substrate.

[0006] In another embodiment, a showerhead assembly configured to deliver multiple gases into a cycle deposition chamber comprises a showerhead having a vertical cavity formed through a central region and a main inner surface configured to face a substrate. The showerhead assembly further comprises an injector block assembly positioned above the showerhead to deliver gases from outside the cycle deposition chamber through the vertical cavity into the cycle deposition chamber. The showerhead assembly further comprises multiple gas channels formed within the injector block assembly and configured to allow gases to flow through the injector block assembly at least partially separately. The neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees.

[0007] In another embodiment, a showerhead assembly configured to deliver multiple gases into a cycle deposition chamber comprises a showerhead having a vertical cavity formed through a central region and a main inner surface configured to face a substrate. The showerhead assembly further comprises an injector block assembly positioned above the showerhead to deliver gases from outside the cycle deposition chamber into the cycle deposition chamber through the vertical cavity. The showerhead assembly further comprises multiple gas channels formed within the injector block assembly and configured to allow gases to flow through the injector block assembly at least partially separately. The vertical cavity has a volume in the shape of a frustocone, and the gases enter the vertical cavity through the narrower upper part and exit into the cycle deposition chamber through the wider base of the frustocone.

[0008] In another embodiment, a showerhead assembly configured to deliver multiple gases into a cycle deposition chamber comprises a showerhead having a vertical cavity formed through a central region and a main inner surface configured to face a substrate. The showerhead assembly further comprises an injector block assembly positioned above the showerhead to deliver gases from outside the cycle deposition chamber through the vertical cavity into the cycle deposition chamber. The showerhead assembly further comprises multiple gas channels formed within the injector block assembly and configured to allow gases to flow through the injector block assembly at least partially separately. The showerhead assembly further comprises a premixing chamber formed within the injector block assembly, the mixing chamber configured to receive gases separately through the gas channels and premix the gases internally to form a gas mixture before the gas mixture is delivered into the vertical cavity.

[0009] In another embodiment, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering the gas to the cycle deposition chamber through the vertical cavity. The showerhead assembly further comprises a premixing chamber formed within the injector block assembly and configured to premix the gas received from the gas line to form a gas mixture internally before delivering the gas mixture to the vertical cavity. The internal volume of the premixing chamber has a constriction that narrows the gas mixture before delivering it to the vertical cavity.

[0010] In another embodiment, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering the gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering the gas to the cycle deposition chamber through the vertical cavity. The showerhead assembly further comprises a premixing chamber formed within the injector block assembly, configured to premix the gas received from the gas line to form a gas mixture internally before delivering the gas mixture to the vertical cavity. The premixing chamber has a lower section having multiple nozzles for injecting the gas mixture into the vertical cavity.

[0011] In another embodiment, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering the gas to the cycle deposition chamber through the vertical cavity. The showerhead assembly further comprises a premixing chamber formed within the injector block assembly, configured to premix the gas received from the gas line to form a gas mixture internally before delivering the gas mixture to the vertical cavity. The neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees.

[0012] In another embodiment, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering the gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering the gas to the cycle deposition chamber through the vertical cavity. The showerhead assembly further comprises a premixing chamber formed within the injector block assembly, configured to premix the gas received from the gas line to form a gas mixture internally before delivering the gas mixture to the vertical cavity. The vertical cavity has a volume in the shape of a frustocone, and the gas enters the vertical cavity through the narrower upper part and exits into the cycle deposition chamber through the base of the frustocone.

[0013] In another embodiment, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering the gas through the vertical cavity to the cycle deposition chamber. The showerhead assembly further comprises a diffuser plate substantially overlapping the lateral mounting area of ​​the showerhead and positioned vertically between the showerhead and the substrate, the diffuser plate having multiple holes for diffusing the gas received from the vertical cavity before it reaches the substrate.

[0014] In another embodiment, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering gas through the vertical cavity to the cycle deposition chamber. The showerhead assembly further comprises a blocking plate positioned in the central region laterally and positioned vertically between the injection nozzles and the substrate.

[0015] In another embodiment, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering gas through the vertical cavity to the cycle deposition chamber. The main inner surface of the showerhead has different angles with respect to the main surface of the substrate at different radial distances from the central axis of the showerhead.

[0016] In another embodiment, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering the gas through the vertical cavity to the cycle deposition chamber. The vertical gap between the main inner surface of the showerhead and the main surface of the substrate changes nonlinearly with respect to the radial distance from the central axis of the showerhead. [Brief explanation of the drawing]

[0017] [Figure 1] A thin-film deposition system including a deposition chamber configured to yield a precursor using a showerhead assembly according to several embodiments is schematically shown.

[0018] [Figure 2A]A cross-sectional view of a showerhead assembly configured to improve precursor velocity and concentration uniformity on a substrate according to some embodiments is shown.

[0019] [Figure 2B] Design features for the optimization of a showerhead assembly configured to improve precursor velocity and concentration uniformity on a substrate according to some embodiments are shown.

[0020] [Figure 2C] A perspective view of a chamber lid assembly including the showerhead assembly shown in FIG. 2A according to some embodiments is shown.

[0021] [Figure 2D] A perspective view of a thin film deposition chamber including the susceptor and the showerhead assembly shown in FIG. 1 according to some embodiments is shown.

[0022] [Figure 2E] The configuration of an exemplary gas injector block of a showerhead assembly and the trajectory of gas flow by simulation within a vertical gas diffusion cavity according to some embodiments are shown.

[0023] [Figure 2F] The surface of the showerhead of a showerhead assembly facing a susceptor according to some embodiments is shown.

[0024] [Figure 3] A perspective view of an upper outer portion of a deposition chamber including a plurality of process stations each configured in accordance with a temperature-controlled showerhead assembly according to some embodiments is shown.

[0025] [Figure 4]The diagram shows a perspective view of an injector block assembly having multiple gas channels formed according to several embodiments, the multiple gas channels configured to allow gas to flow, at least partially separately, through the injector block assembly into a vertical gas diffusion cavity at a certain vertical depth.

[0026] [Figure 5A] The diagram shows a perspective view of an injector block assembly with multiple gas channels formed according to several embodiments, the multiple gas channels configured to allow the gas to flow, at least partially separately, through the injector block assembly to a premixing chamber located in a vertical gas diffusion cavity.

[0027] [Figure 5B] The diagram shows a perspective view of an injector block assembly with multiple gas channels formed according to several embodiments, the multiple gas channels configured to allow the gas to flow, at least partially separately, through the injector block assembly to a premixing chamber located in a vertical gas diffusion cavity.

[0028] [Figure 5C] Figures 5A and 5B show cross-sectional views of the outlet gas channel formed at the bottom of the premixing chamber of the injector block assembly shown in several embodiments.

[0029] [Figure 6A] The diagram shows a perspective view of an injector block assembly having multiple gas channels formed according to several embodiments, the multiple gas channels configured to allow gas to flow, at least partially separately, through the injector block assembly to a premixing chamber located within the injector block assembly.

[0030] [Figure 6B]Figure 6A shows a perspective view and a cross-sectional view of the injector block assembly with the source gas line connected.

[0031] [Figure 6C] The images show perspective and cross-sectional views of injector block assemblies with multiple gas channels formed according to several embodiments, the multiple gas channels configured to allow gas to flow, at least partially separately, through the injector block assembly to a premixing chamber located within the injector block assembly.

[0032] [Figure 7] The images show injector block assemblies in which a premixing chamber is formed according to several embodiments, the premixing chamber being configured to premix the gas received from the gas line to form a gas mixture, and then to deliver the gas mixture to a vertical cavity.

[0033] [Figure 8] The image shows an injector block assembly with a premixing chamber formed according to several other embodiments, which is configured to premix the gas received from the gas line to form a gas mixture, and then deliver the gas mixture to the vertical cavity.

[0034] [Figure 9A] The image shows a side view of a thin film deposition chamber including a showerhead assembly with a diffuser plate according to several embodiments.

[0035] [Figure 9B] This shows the main surface of a diffuser plate, which has multiple holes formed to diffuse the gas.

[0036] [Figure 9C] Figure 9B shows a side view of the diffuser plate.

[0037] [Figure 10A] Figures 9B and 9C schematically show the hole patterns that can be mounted on the diffuser plate. [Figure 10B] Figures 9B and 9C schematically show another pattern of holes that can be mounted on the diffuser plate. [Figure 10C] Figures 9B and 9C schematically show another pattern of holes that can be mounted on the diffuser plate.

[0038] [Figure 10D] The main surface of a diffuser plate has multiple concentric radius zones, with different radius zones having holes arranged in different configurations.

[0039] [Figure 11] The image shows a side view of a thin film deposition chamber including a showerhead assembly having a diffuser plate and a blocking plate according to several embodiments.

[0040] [Figure 12A] This diagram shows the gas flow pattern through the vertical cavity of a showerhead without a blocking plate.

[0041] [Figure 12B] The diagrams show gas flow patterns through the vertical cavity of a showerhead having a vertically elongated blocking plate according to several embodiments.

[0042] [Figure 12C] The diagram shows the gas flow pattern through the vertical cavity of a showerhead having a vertically elongated blocking plate according to several other embodiments.

[0043] [Figure 13]The image shows a cross-sectional side view of a thin film deposition chamber including a showerhead assembly having a diffuser plate with a blocking plate attached, according to several embodiments.

[0044] [Figure 14] The diagram shows a side view of a thin film deposition chamber including a shower head assembly according to an embodiment, where the angle of the main inner surface of the shower head assembly relative to the main surface of the substrate differs at different radial distances from the central axis of the shower head.

[0045] [Figure 15] This shows exemplary precursor exposure and purge gas sequences for a deposition chamber configured to match a temperature-controlled showerhead assembly according to several embodiments.

[0046] [Figure 16] The diagram shows schematic cross-sectional views of conformal thin films formed in high-aspect-ratio trenches using temperature-controlled showerhead assemblies according to several embodiments. [Modes for carrying out the invention]

[0047] Cyclic deposition processes such as atomic layer deposition (ALD) can provide relatively conformable thin films with high uniformity and thickness accuracy on structures with relatively high aspect ratios (e.g., 2:1). Thin films deposited using continuous deposition processes such as chemical vapor deposition (CVD) are generally less conformable and less uniform compared to ALD, but can offer higher productivity and lower costs. To give some examples, ALD and CVD can be used to deposit elemental metals, metallic compounds (e.g., TiN, TaN, etc.), semiconductors (e.g., Si, III-V, etc.), dielectrics (e.g., SiO2, AlN, HfO2, ZrO2, etc.), rare earth oxides, conductive oxides (e.g., IrO2, etc.), ferroelectrics (e.g., PbTiO3, LaNiO3, etc.), and superconductors (e.g., Yba2Cu3O).7-x A wide variety of films can be deposited, including ), and chalcogenides (e.g., GeSbTe).

[0048] Several cyclic deposition processes, such as atomic layer deposition (ALD), involve alternately exposing a substrate to multiple precursors to form a thin film. Different precursors can alternately saturate the substrate surface and react with each other, forming a layer-by-layer thin film. Various types of ALD exist, including time-based ALD and spatial ALD. In time-based ALD, precursors are injected sequentially, reacting one at a time with the active sites on the substrate surface. Exposure to the precursors can be separated by a purging process to prevent mixing and reaction of the precursors in the gas phase. Thus, the reaction is confined to the surface, terminates automatically, and results in a uniform deposition. Furthermore, many ALD processes can enable the deposition of high-quality materials at significantly lower temperatures than CVD, for example, even near room temperature. ALD growth can occur within a specific temperature window; below this window, the precursor molecules may not be sufficiently activated or desorption may be too slow, while above it, the precursors may decompose on the surface or even before reaching the surface, and desorption may be too fast during the purging process.

[0049] Because layer-by-layer growth is possible, ALD allows for precise control of thickness and composition, and therefore precise control of various properties such as conductivity, conformability, uniformity, barrier properties, and mechanical strength. In particular, even for ALD, which is already known to produce thin films with extremely high uniformity compared to other technologies, often due to the scaling of thickness accompanying the scaling of feature sizes in semiconductor devices, there is an increasing need to improve in-wafer uniformity. Although ALD films generally have excellent uniformity, there can be several reasons why uniformity may decrease during deposition. Uniformity can decrease due to, for example, overlapping pulses of reactants, non-uniform precursor distribution, thermal self-decomposition of precursors, and non-uniformity of substrate temperature.

[0050] Non-uniform precursor distribution can be caused by insufficient diffusion or mixing with the carrier gas. For example, in an ALD reactor, precursors are introduced into the reaction chamber from individual raw material delivery lines, and these lines may be combined into a common supply line before being introduced into the reaction chamber. While not bound by any theory, in some cases, the carrier gas from one precursor delivery line may act as a diffusion barrier for the precursor flowing from another precursor delivery line, given that the precursors may be properly mixed with the carrier gas within each individual raw material delivery line. Although the precursors are expected to be properly mixed with the carrier gas within each individual raw material delivery line, they may not be able to spread properly beyond the intersection of the common reactor supply line, which is usually located a short distance upstream from the substrate.

[0051] To mitigate these concerns, some reactor chambers employ means for distributing precursors / reactants and purge gases within the reactor space. One such means involves a showerhead used to effectively distribute and mix the gas containing the precursor. Variations in the design of this hardware can range from flat to tapered designs. Gas distribution can be provided in one of several ways, including (1) across the entire surface of the showerhead through multiple holes supplied by one or more plenums, (2) supply from the center of the showerhead, or (3) from one end to the other (also known as cross-flow).

[0052] To mitigate the aforementioned heterogeneity problems caused by insufficient mixing or diffusion, some ALD reactors, such as those with flat showerheads and distributed pores, have a larger gap between the showerhead and the substrate to increase mixing and diffusion and reduce the effects of gas collisions with the substrate. However, increasing the gap between the showerhead and the substrate comes at the cost of longer ALD cycle times because it increases the space for gas filling and purging. In time-based ALD, longer times required for reactor filling and purging can lead to longer leading and trailing edges of precursor pulses, potentially exacerbating heterogeneity resulting from the overlap of reactant pulses. In space ALD reactors with flat showerheads, the gap can be smaller, but leading and trailing edge effects can still typically exist. Furthermore, even if the design could be improved to reduce the gap between the showerhead and the substrate, doing so could lead to other non-uniformities, such as increased spatial and temporal temperature fluctuations in the showerhead. The inventors have found that, given the stringent requirements of today's semiconductor manufacturing specifications, such temperature fluctuations in the showerhead cause temperature fluctuations in the substrate height, which in turn leads to in-wafer non-uniformities in various parameters, including thickness, resistivity, and step coverage.

[0053] Therefore, there is a need for precursor delivery systems designed to improve the productivity (e.g., shorter ALD cycle times) and uniformity of thin films deposited in ALD systems. To address these and other causes of non-uniformity, various embodiments disclosed herein relate to showerhead assemblies configured to improve the uniformity of precursor rate and concentration on the substrate.

[0054] Cycle deposition system configured for high uniformity showerhead assemblies Various hardware design considerations for cyclic deposition systems, such as ALD systems, are interdependent. Often, optimizing the design of one parameter can lead to a deterioration of another. For example, it may be desirable to reduce the space between the showerhead and the substrate that needs to be filled when the substrate is exposed to the precursor, so that the time required to saturate the substrate surface with the precursor is shorter. However, we have found that reducing the distance between the showerhead and the substrate can adversely affect various properties of the resulting thin film by significantly increasing the non-uniformity of the precursor velocity and concentration on the substrate surface, unless other adjustments are made. In particular, we have found that the design of the showerhead for the ALD reactor can significantly affect the uniformity of the thickness, composition, and physical properties of the thin film deposited in the ALD reactor. Above all, we have found that controlling the spatial concentration or flux profile of the precursor on the substrate surface, as well as maintaining a relatively uniform velocity distribution of precursor molecules, can be important in reducing the non-uniformity of the thin film obtained by ALD deposition. For example, the inventors have discovered that properly diffusing the precursor prior to contact with the substrate, and / or mixing it with a purge gas, can be important for the uniformity of the thin film.

[0055] In particular to address the aforementioned needs, cycle deposition systems according to several embodiments include a thin-film deposition chamber configured to deposit thin films by alternately exposing a substrate to multiple precursors, wherein one or more of the precursors are introduced into the thin-film deposition chamber using a showerhead assembly configured to improve the uniformity of the rate and concentration of the precursors on the substrate. Showerhead assemblies according to various embodiments include a showerhead comprising a solid body portion and a vertically oriented cavity formed through the showerhead in the central region of the showerhead, configured to deliver the precursors to the vertical cavity before introducing them into the deposition chamber. The showerhead has a main inner surface configured to face the substrate, which radially surrounds the vertical cavity and is tapered such that the vertical distance from the substrate to the main inner surface decreases radially outward relative to the center of the substrate. The showerhead assembly further includes an injector block assembly positioned above the showerhead to deliver gas from outside the cycle deposition chamber through the vertical cavity into the cycle deposition chamber. The showerhead assembly further comprises multiple gas channels formed within the injector block assembly and configured to allow gas to flow through the injector block assembly at least partially separately.

[0056] In various embodiments, the gas channels exiting the injector block assembly extend in different directions relative to each other and in different directions with respect to the vertical axis intersecting the substrate.

[0057] In various embodiments, the neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees.

[0058] In various embodiments, the vertical cavity has curved sidewalls having the shape of the inner surface of a frustum of a cone.

[0059] In various embodiments, the showerhead assembly further comprises a premixing chamber formed within the injector block assembly, the premixing chamber being configured to receive the gases separately through the gas channels and to premix the gases internally to form a gas mixture before the gas mixture is delivered to the vertical cavity.

[0060] The showerhead assemblies in various embodiments enable, in particular, improved uniformity of the rate and concentration of precursors reaching the substrate surface, thereby enabling improvements in the properties of the resulting thin film, such as improved uniformity of thickness and composition. When the thin film to be deposited is a conductor, such as TiN, the system further enables improved uniformity of resistivity. Furthermore, the system also improves step coverage of the thin film in high aspect ratio structures.

[0061] In the following, several embodiments may be described using specific precursors for particular films as examples. For example, thin film deposition systems and methods according to various embodiments may be described using specific exemplary precursors including TiCl4, NH3, and SiCl2H2 for depositing TiN and / or TiSiN. However, embodiments are not limited in this way, and it will be understood that aspects of the present invention are applicable to any suitable combination of precursors for depositing any suitable thin film that can be formed using a cyclic deposition process such as ALD.

[0062] Figure 1 schematically shows a thin film deposition system including a deposition chamber configured to supply a precursor using a showerhead assembly configured to improve the uniformity of precursor velocity and concentration on the substrate according to several embodiments. The thin film deposition system 100 includes a thin film deposition chamber 102 and a precursor delivery system 106 configured to supply a plurality of precursors to the deposition chamber 102. The illustrated deposition chamber 102 is configured to process a substrate 103, such as a wafer, on a support 116, such as a susceptor, supported by support posts 115, under process conditions. The deposition chamber 102 further includes an injector block 108, such as a nozzle, configured to discharge a plurality of precursors into the deposition chamber 102 centrally via a showerhead assembly 112 configured to improve the uniformity of precursor velocity and concentration on the substrate. The injector block assembly 108 can guide a gas, such as a precursor and / or purge gas, into a gas diffusion vertical cavity prior to its introduction into the deposition chamber 102 for contact with the substrate 103. The showerhead assembly 112 is configured to uniformly diffuse the precursor over the substrate 103 on the susceptor 116 so that uniform deposition occurs. The deposition chamber may be equipped with a pressure monitoring sensor (P) and / or a temperature monitoring sensor (T).

[0063] The precursor delivery system 106 is configured to deliver multiple precursors from precursor sources (120, 124) and one or more purge gases, such as inert gases, from purge gas sources (128-1, 128-2, 134-1, 134-2) to the deposition chamber 102. Each of the precursors and purge gases is connected to the deposition chamber 102 by its respective gas delivery line. The gas delivery lines further include a mass flow controller (MFC) 132 and each precursor valve for introducing each precursor into the thin film deposition chamber. More conveniently, at least some of the valves may be ultrafast atomic layer deposition (ALD) valves.

[0064] For illustrative purposes only, in the configuration shown in Figure 1, the multiple precursors include a first precursor and a second precursor. The first precursor is stored in at least one first precursor supply source 120, and the second precursor is stored in at least one second precursor supply source 124. The precursor delivery system 106 is configured to deliver the first and second precursors from the first and second precursor supply sources 120 and 124 to the deposition chamber 102 via first and second precursor delivery lines 110 and 114, respectively. The first and second precursor delivery lines 110 and 114 may optionally include high-conductance line sections 130 and 134, such as reservoirs, respectively. Rapid purge (RP) gas can be stored in at least two RP gas supply sources 128-1 and 128-2. The precursor delivery system 106 is configured to deliver rapid purge (RP) gas from RP gas sources 128-1 and 128-2 to the deposition chamber 102 via RP gas delivery lines 118-1 and 118-2, respectively. The RP gas delivery lines 118-1 and 118-2 may optionally include high-conductance line sections 138-1 and 138-2, such as reservoirs. Continuous purge (CP) gas can be stored in at least two CP gas sources 134-1 and 134-2. The precursor delivery system 106 is configured to deliver CP gas from CP gas sources 134-1 and 134-2 to the deposition chamber 102 via CP gas delivery lines 114-1 and 114-2, respectively.

[0065] The first and second precursors are configured to be delivered from the first and second precursor supply sources 120 and 124 to the showerhead assembly 112 by independently operating the first and second precursor atomic layer deposition (ALD) valves 140 and 144, which are connected in parallel. Furthermore, the RP purge gas is configured to be delivered from the RP purge gas supply sources 128-1 and 128-2 to the showerhead assembly 112 by independently operating the two respective purge gas atomic layer deposition (ALD) valves 148-1 and 148-2, which are connected in parallel. The respective delivery lines connected to the ALD valves 140, 144, 148-1, and 148-2, as well as to the showerhead assembly 112, can be arranged to supply the respective gases to the nozzles 108 via a multi-valve block assembly 150, which may be attached to the lid of the deposition chamber 102. In the illustrated configuration, ALD valves 140, 144, 148-1, and 148-2 are the final valves before the respective gases are introduced into the deposition chamber 102.

[0066] As an example, the first and second precursors may include TiCl4 and NH3, respectively, which are delivered from their respective TiCl4 and NH3 sources to the deposition chamber 102 via their respective precursor delivery lines to form, for example, TiN. Furthermore, the precursor delivery system may be configured to deliver Ar as a purge gas from an Ar source to the processing chamber via a purge gas delivery line. The purge gas may be delivered as a continuous purge (CP) gas, which may be delivered via a precursor ALD valve, or / or as a rapid purge (RP) gas, which may be delivered via a dedicated purge gas ALD valve, as shown in Figure 1. When introduced as a CP gas, the purge gas may be introduced into the deposition chamber 102 together with the reactive precursor to function as a carrier or diluent gas. According to various embodiments, the purge gas and precursor can form a mixture in the injector block assembly 108 and / or in a vertical cavity formed through the central region of the showerhead. The illustrated precursor delivery system 100 can be configured to deliver Ar as RP gas from purge gas sources 128-1 and 128-2 to the processing chamber 102 via their respective purge gas delivery lines and purge gas ALD valves 148-1 and 148-2.

[0067] According to various embodiments, the thin film deposition system 100 is configured for plasma-assisted thermal ALD. While plasma-assisted processes such as plasma-assisted atomic layer deposition (PE-ALD) may be effective for forming conformal films on surfaces with relatively low aspect ratios, such processes may not be effective for depositing films inside vias and cavities with relatively high aspect ratios. One possible reason for this, though not limited by theory, is that the plasma may not reach deeper parts of vias with high aspect ratios, depending on the circumstances. In these circumstances, different parts of the via may be exposed to different amounts of plasma, leading to undesirable structural effects (sometimes called cusping or keyhole formation) resulting from non-uniform deposition, such as thicker films being deposited near the opening than in deeper parts of the via. For these reasons, thermal cycle deposition, such as thermal ALD, may be more advantageous because such thermal processes do not depend on whether the plasma can reach each part of the surface to be deposited.

[0068] Shower head assembly with tapered inner surface and central vertical diffusion cavity to improve the uniformity of precursor rate and concentration. Figure 2A shows a cross-sectional view of a showerhead assembly 200 having a tapered inner surface and a central vertical diffusion cavity according to several embodiments. The showerhead assembly 200 comprises a centrally fed showerhead 204 having a solid body portion 208 made of metal and a vertical gas diffusion and / or mixing cavity 212 formed vertically through its central region. The solid body portion 208 of the showerhead 204 has a main surface configured to face the substrate, and this main surface has a constant gradient with respect to the main surface of the substrate such that the thickness of the solid body portion increases toward the edge region of the solid body portion. The showerhead 204 is configured to introduce precursor and purge gases into the thin film deposition chamber via the vertical gas diffusion cavity 212. The vertical gas diffusion cavity 212 has curved sidewalls that form a portion of the inner surface of the showerhead 204 continuously with the main inner surface. The vertical gas diffusion cavity extends through the entire thickness of the showerhead 204 in the central region. The showerhead assembly 200 further comprises a network of cooling channels 216 formed above the showerhead 204 and configured to dissipate heat from the showerhead 204. The showerhead assembly may further include a network of heating elements 220 configured to supply heat to the showerhead 204 and to contact the solid body portion 208, for example, by being embedded in the solid body portion 208 (not shown). The cooling channels 216 and heating elements 220 may be arranged in a suitable pattern, such as a plurality of concentric radius rings or a meandering pattern. A filling metal body 252 encloses the showerhead 204 and fills the space between the showerhead 204 and the cover plate or lid portion 248, which forms the outer cover of the showerhead assembly 200. The filling metal body 252 may be formed of the same metal as the solid body portion 208, for example, aluminum.

[0069] The illustrated showerhead assembly 200 comprises a centrally fed showerhead 204 having a tapered inner surface facing the substrate. The inventors have found that the tapered inner surface can be important for improving the uniformity of the precursor concentration and rate, as well as improving the cycle time. When configured in this way, the centrally fed showerhead 204 forms a tapered space above the substrate. The inventors have found that, compared to a showerhead with a flat surface facing the substrate, the tapered space allows for a significant reduction in the volume above the substrate. In addition, the inventors have found that the tapered space allows for a more uniform flow of gas to be incident on the substrate surface. The reduction in volume and uniform gas flow result in faster cycle times, partly because the time required to purge unreacted precursor gas between precursor pulses is shorter. According to the embodiment, the solid body portion 208 may be a continuous single piece article formed of a highly conductive metal. The inventors have discovered that a solid body portion 208 formed from a single piece of material conveniently allows for rapid heat conduction across the surface of the solid body portion 208. Similarly, a solid body portion 208 formed from a highly conductive metal conveniently allows for rapid heat conduction across the surface of the solid body portion 208. According to various embodiments, the solid body portion is formed from an aluminum-based metal or aluminum.

[0070] The showerhead assembly 200 further comprises an injector block assembly 224 having channels formed for delivering gas to a gas mixing cavity 312 through one or more nozzles. The injector block assembly 224 has a top surface configured to receive multiple gas lines and connect to the gas channels, and a bottom surface that connects to the upper opening of the vertical gas diffusion cavity 212 and allows gas to flow into the vertical gas diffusion cavity 212. Different gas channels among the multiple gas channels are configured to carry different gases or gas mixtures from one another.

[0071] The nozzles may be configured to guide each gas at a substantially oblique angle, as shown in the figure. Furthermore, the nozzles may be configured not to provide a line of sight to the substrate or wafer for the gas flow. In some examples, the nozzles may be made of an aluminum-based metal or aluminum.

[0072] The filling metal body 252 encloses the shower head 204 and fills the space between the shower head 204 and the lid portion 248, which forms the outer cover of the shower head assembly 200. Figure 2A further illustrates a thermal choke or thermal barrier 261. The thermal barrier 261 may include a configurable insert to regulate heat transfer from the cooling liner 259 to the shower head 204.

[0073] As described above, the inventors have found that properly diffusing the precursor prior to contact with the substrate, and / or mixing it with the purge gas, can be important for controlling the uniformity of the thin film in both thickness and physical properties, including chemical composition and resistivity. Furthermore, these new findings have resulted in a vast number of improvements, including, but are not limited to, faster response to changes in temperature measurement, improved nozzle orientation to produce jet effects and impacts to the substrate, improved gas mixing, improved thermal contact resulting in control of the showerhead temperature profile, and optimized taper angles for flow and temperature uniformity. To this end, the inventors have found that the factors described later with respect to Figure 2B can be important for enabling the uniform precursor delivery that can be made possible by proper diffusion and / or mixing of the precursor with the purge gas.

[0074] Figure 2B shows features for optimizing the diffusion and mixing of the precursor in several embodiments. Factors include the neck angle 260, the cone angle 264, the configuration of the injector block 224, and the gap 272 from the wafer to the showerhead.

[0075] As used herein, the neck angle 260 refers to the angle between the plane of the substrate and the surface of the showerhead facing the substrate. According to various embodiments, the neck angle is smaller than a value within the range defined by 12°, 10°, 8°, 6°, 4°, or any of these values, for example, 9.0°. Within the illustrated range of neck angles, concentration non-uniformity showed the greatest improvement at a neck angle of 5.5 degrees, while velocity non-uniformity showed the greatest improvement at a neck angle of 6.5 degrees.

[0076] As used herein, the cone angle 264 refers to the angle between a line perpendicular to the plane of the substrate and the inner surface of the mixing cavity. According to some embodiments, the cone angle is smaller than 12°, 10°, 8°, 6°, or a value within the range defined by any of these values, for example, less than 4.5°. Non-uniformity of concentration and velocity showed substantial improvement at a cone angle of 10 degrees compared to 11 degrees.

[0077] As used herein, the gap 272 from the wafer to the showerhead refers to the distance between the bottom surface of the showerhead facing the substrate and the top surface of the wafer on the susceptor. According to some embodiments, the gap is smaller than a value defined by 0.3 inches, 0.25 inches, 0.2 inches, 0.15 inches, 0.10 inches, or any of these values, for example, less than 0.15 inches. The inventors have found that gaps 272 of 0.15 inches and 0.10 inches can reduce the amount of gas between the showerhead and the substrate by 36% and 45%, respectively, compared to a gap 272 of 0.25 inches. Non-uniformity of concentration and velocity showed substantial improvement at a gap distance of 0.158 inches compared to 0.258 inches.

[0078] The shower head assembly 200 further comprises a temperature sensor 256 thermally connected to the shower head 204. The inventors have found that embedding the temperature sensor in a solid body portion 208 made of a highly conductive metal such as aluminum maximizes the response time of the temperature sensor 256. Furthermore, the inventors have found that for closed-loop temperature control with a fast response time, the temperature sensor should be embedded at a distance of 0.5 inches, 0.3 inches, 0.1 inches, or within a range defined by any of these values ​​from the surface facing the substrate. In some examples, the temperature sensor 256 may include a spring-loaded monitor.

[0079] Furthermore, the shower head assembly 200 further comprises a network of heating elements 220 configured to supply heat to the shower head 204, for example, by being embedded in the solid body portion 208 (not shown) and in contact with the solid body portion 208.

[0080] The cooling channel 216 is configured to circulate a coolant at a constant temperature, which is then circulated by a heat exchanger, so that the surface of the solid body portion 208 adjacent to the cooling channel 216 is kept at a relatively constant temperature. The coolant is kept at a temperature within the range defined by 100°C, 120°C, 140°C, 160°C, 180°C, 200°C, 220°C, or any of these values.

[0081] The heating element 220 is configured to supply energy to the solid body portion 208 of the showerhead 204 by Joule heating. The heating element 220 is configured to supply power within the range defined by 500W, 750W, 1000W, 1250W, 1500W, 1750W, 2000W, or any of these values.

[0082] Using a network of heating elements 220, a network of cooling channels 216, and a temperature sensor 256, the showerhead assembly 200 is configured to have a closed-loop temperature control system for maintaining a relatively constant temperature on its surface during the operation of the reactor chamber. In this configuration, the network of cooling channels 216 and the network of heating elements 220, formed at different vertical heights and thermally connected to each other and to the solid body portions, maintains the temperature of the inner surface of the substrate-facing solid body portion 208 at least 20°C higher than the temperature of the liquid coolant filling the cooling channels, and maintains an average temperature of 160–230°C when depositing a thin film on the substrate at temperatures above 350°C, 400°C, 450°C, 500°C, 600°C, 650°C, or within the range defined by any of these values.

[0083] Figure 2C shows an exploded view of a lid portion 248, such as a cover plate, a thermal choke or thermal barrier 261, and a shower head 204. The thermal barrier 261 may include an insert configurable to adjust heat transfer from the cooling liner 259 to the shower head 204. The lid portion 248 is formed with ALD valves (140, 144, 148-1, 148-2) for controlling the flow of precursor and gas to the chamber through the shower head 204, such as a multi-valve block assembly 150.

[0084] Figure 2D shows a perspective view of the thin film deposition chamber 102 schematically shown in Figure 1. The thin film deposition chamber 102 comprises a susceptor 116, such as a base, and a solid body portion 208 of a showerhead formed above it. A vertical gas diffusion cavity 212 is coupled to the central region of the thin film deposition chamber 102. The vertical gas diffusion cavity 212 can contain one or more inlet gases.

[0085] Several design considerations relating to the injector block 224 are described below with reference to Figure 2E. Figure 2E shows exemplary designs of a gas injector block 224 for improving the diffusion and mixing of precursors in several embodiments. In the illustrated embodiments, the injector block 224 comprises a metal disk or circular slab with gas channels 226 defined inside. The injector block 224 may further comprise the gas channels 226 and two inlet tubes 225a and 225b, in which inlet channels 227 and 228 are formed inside, respectively, and may be coupled to the top of a vertical gas diffusion cavity 212. We have found that the arrangement of the gas channels 226 inside the injector block 224 can be an important consideration for uniform distribution of precursor and purge gases. In particular, in the exemplary designs shown, the gas channels 226 inside the gas injector block 224 extend at an oblique angle substantially deviating from vertical. This can be seen more clearly in the diagram of a gas channel where the block is not connected to the vertical gas diffusion cavity 212. With this configuration, the gas introduced into the vertical gas diffusion cavity 212 collides with the sidewall of the vertical gas diffusion cavity 212 at least once, as can be seen from the distribution of gas trajectories in the simulation. In one example, a computational fluid dynamics (CFD) simulation was performed, and the results are shown in Figure 2E, which shows the streamlines of a fluid such as a precursor or purge gas entering the upper end through inlet channels 227 and 228. As shown in the streamline trajectories in the simulation, the oblique or inclined inlet channels 227 and 228 cause the gaseous fluid to enter the vertical gas diffusion cavity 212 obliquely from above and collide with the sidewall of the diffusion cavity 212 at least once. This collision can cause the formation of vortices and turbulence in the fluid, as indicated by streamlines, and thus promote mixing and diffusion, resulting in the delivery of a more uniform precursor in the gaseous fluid upon entry into the lower deposition chamber.

[0086] Table 1 below summarizes the improvements obtained by optimizing the features described above for Figures 2B and 2E. [Table 1]

[0087] Figure 2F shows the substrate-facing surface of a temperature-controlled showerhead assembly according to several embodiments. The central portion of the surface corresponding to the vertical gas diffusion cavity 212 (Figure 2A) has multiple perforations in its central region to facilitate further diffusion of precursor and / or purge gases. At its bottom 215, the mixing cavity has a diameter within a range defined by 20 mm, 30 mm, 40 mm, 50 mm, 60 mm, 70 mm, 80 mm, 90 mm, 100 mm, or any of these values.

[0088] Figure 3 shows an exemplary deposition chamber that can implement various embodiments of a showerhead assembly configured to improve the uniformity of the rate and concentration of the precursor on the substrate. Figure 3 shows a perspective view of the upper outer portion of the deposition chamber, which includes a plurality of processing stations, each configured to deliver the precursor to a common gas distribution plate or showerhead assembly using two or more ALD valves connected in parallel according to several embodiments. Each processing station is configured, for example, in a manner similar to that described above with respect to Figure 1, and includes its own lid portion. Referring again to Figure 1, after each MFC, each gas delivery line branches into a plurality of lines in each manifold 136. Each of the branched lines can supply its respective gas to one of the processing stations. The illustrated process chamber 300 comprises one or more processing stations, each configured to process a substrate on a support such as a susceptor under process conditions, in a manner similar to that described above with respect to Figure 1. Each processing station is configured to process the substrate under specific processing conditions such as processing temperature and processing pressure. In the illustrated embodiment, there are four processing stations, each having corresponding lid portions 248-1, 248-2, 248-3, and 248-4. Below the lid portions 248-1, 248-2, 248-3, and 248-4 are the respective showerhead assemblies 350-1, 350-2, 350-3, and 350-4, each configured in a manner similar to that shown in Figures 1 and 2A to 2F, the details of which are not repeated here for brevity. Thus, the illustrated deposition chamber is configured, according to some embodiments, to introduce one or more precursors using two or more atomic layer deposition (ALD) valves, each configured to supply precursors and / or purge gases to each processing station. The illustrated process chamber is a multi-station process chamber, but it will be understood that the embodiments disclosed herein are not limited thereto and may be implemented in any suitable single-wafer or multi-wafer process chamber.

[0089] Injector block assembly with separation gas channels that improve the uniformity of precursor rate and concentration. As described above, a showerhead according to an embodiment in which a tapered inner surface and a vertical gas diffusion cavity formed in its central region are optimized neck and cone angles can significantly improve the uniformity of precursor velocity and concentration on the substrate surface by substantially reducing direct gas collisions. Within the framework of molecular flow, the inventors have further discovered that, according to various embodiments, further improvements can be made by using an injector block assembly configured such that multiple gas channels separate at least partially from each other, passing through the injector block assembly to the vertical gas diffusion cavity via further optimization of the outlet channels. According to various embodiments, the gas channels exiting the injector block assembly extend in different directions relative to each other and in different directions relative to the vertical axis intersecting the substrate. According to various embodiments, the gas channels exiting the injector block assembly extend in different directions. These different directions are inclined with respect to the vertical axis of the cycle deposition chamber and do not directly intersect the main surface of the substrate. Therefore, under molecular flow, direct collisions or line-of-sight flows of gas molecules to the substrate surface are substantially suppressed.

[0090] According to various embodiments, a showerhead assembly configured to deliver multiple gases into a cycle deposition chamber comprises a showerhead having a vertical cavity formed through a central region and a main inner surface configured to face a substrate. The showerhead assembly further comprises an injector block assembly positioned above the showerhead to deliver gases from outside the cycle deposition chamber through the vertical cavity into the cycle deposition chamber. The showerhead assembly further comprises multiple gas channels formed within the injector block assembly and configured to allow gases to flow through the injector block assembly at least partially separately.

[0091] In some embodiments, the main inner surface is tapered such that it radially surrounds the vertical cavity and the vertical distance from the substrate to the main inner surface decreases radially outward relative to the center of the substrate. In some embodiments, the gas channels exiting the injector block assembly extend in different directions relative to each other and in different directions relative to the vertical axis intersecting the substrate. In some embodiments, the neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees. In some embodiments, the vertical cavity has a volume having the shape of a frustocone, and the gas enters the vertical cavity through the narrower upper part and exits into the cycle deposition chamber through the base of the frustocone. In some embodiments, the showerhead assembly further comprises a premixing chamber formed within the injector block assembly, which is configured to premix the gas received from the gas line to form a gas mixture internally before delivering the gas mixture to the vertical cavity.

[0092] Figure 4 shows a perspective view of an injector block assembly having multiple gas channels formed according to several embodiments, the multiple gas channels configured to sequentially flow gas through the injector block assembly to a vertical gas diffusion cavity at some vertical depth, at least partially separately. In the illustrated embodiment, similar to the injector block 224 described with respect to Figure 2E, the illustrated injector block assembly 424 comprises a disk or circular slab portion 428 in which gas channels 426-1, 426-2 are defined. However, unlike the injector block 224, the injector block assembly 424 further comprises a protruding portion 430 that protrudes from the bottom surface of the circular slab portion 428 and projects into the vertical gas diffusion cavity 212. The gas channels 426-1, 426-2 extend to the protruding portion 430 before exiting the injector block assembly 424. The circular slab portion 428 has an upper outer surface having gas channel openings configured to receive multiple gas lines flowing into gas channels 426-1 and 426-2. The circular slab portion 428 has a lower outer surface in which a protruding portion 430 is formed, which is coupled to and inserted into the upper opening of the vertical gas diffusion cavity 212 and configured to allow gas to flow through it.

[0093] Different gas channels among several gas channels 426-1, 426-2 within the injector block assembly 424 are configured to carry different gases or gas mixtures at a given time, which are then mixed after exiting into a vertical diffusion cavity 212, known as the individual flow concept. In one configuration, at a given time, one of the gas channels 426-1, 426-2 may be configured to carry a first gas or first gas mixture containing a first precursor, while the other gas channel 426-2 may be configured to carry a second gas or second gas mixture containing a second precursor.

[0094] As an example, to deposit a TiN-based material, referring again to Figure 1, in the first deposition stage or subcycle of the deposition cycle, one of the gas channels 426-1, 426-2 can be connected to a first precursor supply source 120 (Figure 1) to supply a first precursor (e.g., one of the Ti and nitrogen precursors) or a first gas mixture containing the first precursor to the substrate. The first gas mixture may be a mixture of the first precursor and a carrier or diluent gas, such as an inert gas such as Ar or N2. The other of the gas channels 426-1, 426-2 may optionally be connected in the first deposition stage to a continuous purge supply source 134-2 (Figure 1) for flowing an inert gas such as Ar or N2 to provide further dilution of the first precursor. Depending on the reaction and the reactants used, one or both of the carrier gas and / or inert gas may be omitted in the first deposition stage. Subsequently, in a second deposition stage or sub-cycle of the deposition cycle, one of the gas channels 426-1, 426-2 can be connected to a second precursor supply source 124 (Figure 1) to supply a second precursor (e.g., the other of the Ti and nitrogen precursors), or a second gas mixture containing the second precursor, to the substrate. The second gas mixture may be a mixture of the second precursor and a carrier or diluent gas, such as an inert gas like Ar or N2. The other of the gas channels 426-1, 426-2 may optionally be connected in the second deposition stage to a continuous purge supply source 134-2 (Figure 1) for flowing an inert gas such as Ar or N2 to provide further dilution of the first precursor.

[0095] Depending on the reaction and the reactants used, it will be understood that either or both of the carrier gas and / or inert gas may be omitted in the first deposition stage. For example, a precursor, which is in solid or liquid form at the source, can be vaporized and carried by the carrier gas before being introduced into one of the gas channels 426-1, 426-2 in one or both of the first and second deposition stages. However, a precursor that is already in gaseous form at the source may be introduced into one of the gas channels 426-1, 426-2 without being mixed with the carrier gas. The other of the gas channels 426-1, 426-2 may optionally be connected to a continuous purge source 134-2 (Figure 1) for flowing an inert gas such as Ar or N2 to provide further dilution of the first precursor in one or both of the first and second deposition stages.

[0096] Referring further to Figure 4, in the illustrated embodiment, the gas channels 426-1 and 426-2 in the injector block assembly 424 are configured such that the gases flowing through the different gas channels enter the vertical gas diffusion cavity 212 separately at different vertical depths within the vertical gas diffusion cavity 212 without being mixed before being delivered into the vertical gas diffusion cavity 212. The illustrated injector block assembly 424 includes a projection 430 that projects vertically into the vertical gas diffusion cavity 212, and the gas channels 426-1 and 426-2 extend into the projection 430 and then exit the projection 430 at different vertical heights such that the gases flowing through their respective gas channels remain separated at the projection 430 until they exit the projection 430 into the vertical cavity at different vertical depths.

[0097] In the illustrated embodiment, the circular slab portion 428 and the protruding portion 430 comprise a solid slab portion and a solid cylindrical portion, respectively, with gas channels 426-1 and 426-2 defined inside. However, the embodiment is not limited thereto, and the circular slab portion 428 and the protruding portion 430 can have any suitable shape, including a suitable polygon for extending the gas channels 426-1 and 426-2.

[0098] Each of the gas channels 426-1 and 426-2 extending into the protruding portion 430 comprises a main channel that branches into a plurality of smaller outlet channels through which the corresponding gas ultimately passes before entering the vertical cavity. In the illustrated embodiment, each main channel extends into the protruding portion 430 obliquely to the vertical axis before branching into the plurality of outlet channels, as shown in the cross-sectional view of the protruding portion 430. In some examples, the outlet channels can have various directional configurations, as shown in the cross-sectional view 450A of the lower injection portion obtained along A-A'. The outlet gas channels exiting the injector block assembly 424 extend in different directions, intersecting different sidewall portions of the vertical gas diffusion cavity 212. In one specific example, in the illustrated example, six outlet channels branch off from each main channel at 60-degree intervals. The outlet channels extend outward from the main channel at an angle inclined with respect to the radial direction. In one example, the nozzle diameter of the outlet channel may be between 0.01 inches and 0.99 inches, or within the range defined by any of these values ​​(e.g., 0.08 inches).

[0099] Referring further to Figure 4, gas channels 426-1 and 426-2 are configured so that different gases exit the injector block assembly at different vertical depths of the vertical gas diffusion cavity 212. As shown in the figure, the main channels of gas channels 426-1 and 426-2 extend within the protruding portion 430 to different vertical heights before branching into the outlet channels. In one example, in the illustrated example, the outlet channels extend horizontally outward from the main channels. The outlet channels extend horizontally parallel to the main surface of the substrate. As a result, the gases delivered by gas channels 426-1 and 426-2 are guided to and collide with the sidewalls of the vertical gas diffusion cavity 212 at different vertical depths of the vertical gas diffusion cavity 212. However, the embodiments are not limited in this way, and in other embodiments, the main channels of gas channels 426-1 and 426-2 may extend to substantially the same vertical height so that the gas delivered by gas channels 426-1 and 426-2 collides with the sidewalls of the vertical gas diffusion cavity 212 at the same or identical vertical height.

[0100] Figures 5A and 5B show perspective views of injector block assemblies with multiple gas channels formed according to several embodiments, the multiple gas channels configured to allow gas to flow, at least partially separately, through the injector block assembly to a premixing chamber located in a vertical gas diffusion cavity. In the illustrated embodiments, similar to the injector block assembly 424 described with respect to Figure 4, the illustrated injector block assemblies 524A, 524B include disk or circular slab portions 528A, 528B with gas channels 526-1, 526-2 defined inside. However, unlike the injector block assembly 424, the injector block assemblies 524A, 524B further include premixing chambers 530A, 530B that protrude from the bottom surface of the circular slab portions 528A, 528B, also known as the concept of premixing at the nozzle, and protrude into the vertical gas diffusion cavity 212. The circular slab sections 528A and 528B have upper outer surfaces having gas channel openings configured to receive multiple gas lines flowing into gas channels 526-1 and 526-2. The circular slab sections 528A and 528B have lower outer surfaces in which premixing chambers 530A and 530B are formed, and the premixing chambers 530A and 530B are coupled to and inserted into the upper openings of the vertical gas diffusion cavity 212 so that the gas after premixing in the premixing chambers 530A and 530B flows into the vertical gas diffusion cavity 212.

[0101] With respect to Figure 4, in a similar manner to the injector block assembly 424 described above, different gas channels among the multiple gas channels 526-1, 526-2 in the injector block assembly 524 are configured to receive and flow different gases or gas mixtures from each other at a given time. The similarities between injector block assemblies 524A, 524B and injector block assembly 424 (Figure 4) will not be repeated here for brevity. However, in some examples, such as the example shown in Figure 5B, the nozzle diameter of the outlet channel may be between 0.01 inches and 0.99 inches, or within the range defined by any of these values ​​(e.g., 0.2 inches).

[0102] Similar to injector block assembly 424 (Figure 4), injector block assemblies 524A and 524B have disk or circular slab portions 528A and 528B. However, unlike injector block assembly 424, injector block assemblies 524A and 524B do not have solid protrusions that project from the bottom surface of the circular slab portions 528A and 528B. Instead, hollow protrusions are attached to the bottom surface of the circular slab portions 528A and 528B, which function as premixing chambers 530A and 530B configured to premix the gas delivered by gas channels 526-1 and 526-2 before delivering it into the vertical gas diffusion cavity 212. Instead of remaining separated until introduced into the vertical cavity, the gas flowing through gas channels 526-1 and 526-2 remains separated until introduced into premixing chambers 530A and 530B, where it is premixed. After being premixed in the premixing chambers 530A and 530B, it exits the premixing chambers 530A and 530B and enters the vertical gas diffusion cavity 212 for further mixing. The premixing chambers 530A and 530B have upper openings directly coupled to the injector block assembly to receive gas directly from the injector block assembly. Gas channels 526-1 and 526-2 are configured to allow gas to flow into the upper openings of the premixing chambers 530A and 530B for premixing in the premixing chambers 530A and 530B, after which the premixed gas is introduced into the vertical gas diffusion cavity 212. The gases flow separately through different gas channels 526-1 and 526-2 before entering premixing chambers 530A and 530B, where they are premixed. The gas channels 526-1 and 526-2 exiting the injector block assembly extend in different directions. The illustrated premixing chambers 530A and 530B comprise hollow cavities having a cylindrical cavity shape defined by a bottom wall and curved side walls. The different extending directions of the gas channels 526-1 and 526-2 intersect with different bottom or side wall portions of the premixing chambers. Therefore, molecules of the different gases flowing into the premixing chambers 530A and 530B are likely to collide with the side walls or bottom surfaces of the premixing chambers 530A and 530B before entering the vertical gas diffusion cavity 212.

[0103] Referring further to Figures 5A and 5B, the premixing chambers 530A and 530B are provided with one or more outlet channels formed through the side walls at the lower part of the premixing chambers 530A and 530B. As shown by the cross-sectional view through the lower part of the premixing chambers 530A and 530B, the outlet channels extend outward from the hollow cavities of the premixing chambers 530A and 530B. The outlet channels extend horizontally parallel to the main surface of the substrate and surround the mixing chambers. In the illustrated example, the outlet channels are formed at the same vertical height. However, embodiments are not limited in this way, and the outlet channels may extend in directions other than horizontal and may be formed at different vertical heights. In one example, as shown by the cross-sectional view 550B of the lower injection portion obtained along B-B', the outlet channels may have various directional configurations. In another example, as shown by the cross-sectional view 550C of the lower injection portion obtained along C-C', the outlet channels may also have various directional configurations.

[0104] Figure 5C shows a cross-sectional view of an outlet gas channel formed at the bottom of the premixing chamber of an injector block assembly shown in Figures 5A and 5B according to several embodiments. As described above, the outlet channel is oriented outward from the main cavities of the premixing chambers 530A and 530B in the horizontal direction. As shown by the cross-sectional view passing through the bottom of the premixing chambers 530A and 530B, the outlet channel extends outward from the internal cavities of the premixing chambers 530A and 530B. The outlet channel extends horizontally parallel to the main surface of the substrate and surrounds the premixing chambers 530A and 530B. As shown, the direction of the outlet channel is not perpendicular to the inner circumference of the internal cavities of the premixing chambers 530A and 530B. The illustrated cross-sectional view is superimposed on a Cartesian coordinate system with x and y axes for illustrative purposes.

[0105] The number of outlet channels (n) may be greater than 3, 4, 5, 6, 7, 8, or 9, or may be within the range defined by any of these values. The angular spacing between adjacent outlet channels may generally be 360° / n (e.g., equally spaced channels). The outlet direction of the outlet channels does not have to be perpendicular to the tangent to the circumference of the internal cavity of the premixing chambers 530A, 530B. Instead, the outlet direction may form an angle with respect to the direction perpendicular to the tangent. In the cross-sectional view, the direction of the outlet channels forms an angle with respect to the direction perpendicular to the tangent to the circumference of the cylindrical cavity, which will be referred to in this description as the nozzle outlet angle (NEA). The NEA 575 may be between 10° and 80°, and may be greater than, for example, 10°, 20°, 30°, 40°, 50°, 60°, or 70°, or may be within the range defined by any of these values, for example, 30°. The inventors have found that increasing the NEA 575 relative to the normal to the tangent to the circumference of the cavity wall increases the swirling velocity of gas molecules within the vertical gas diffusion cavity 212. For example, an NEA of 30° may be associated with a more aggressive outlet angle having a higher swirling velocity compared to an NEA of 60°. In another example, a smaller nozzle diameter 580 may be associated with higher outlet velocities and swirling velocities.

[0106] In the illustrated example, the outlet channels are formed at the same vertical height. However, the embodiments are not limited in this way, and the outlet channels may extend in directions other than horizontal and may be formed at different vertical heights.

[0107] Figure 6A shows a perspective view of an injector block assembly having multiple gas channels formed according to several embodiments, the multiple gas channels configured to allow gas to flow at least partially separately through the injector block assembly to a premixing chamber located within the injector block assembly. Figure 6B shows a perspective view and a cross-sectional view of the injector block assembly of Figure 6A with the source gas line connected. In the illustrated embodiments, similar to the injector block assemblies 424, 524A, and 524B described above with respect to Figures 4, 5A, and 5B, respectively, the illustrated injector block assembly 624 comprises a disk or circular slab portion with gas channels 626-1, 626-2 defined inside. With respect to Figures 4, 5A, and 5B, respectively, in a manner similar to that of the injector block assemblies 424, 524A, and 524B described above, different gas channels among the multiple gas channels 626-1, 626-2 in the injector block assembly 624 are configured to accept and pass through different gases or gas mixtures at a given time. The similarities between the injector block assembly 624 and the injector block assemblies 424, 524A, and 524B will not be repeated here for brevity.

[0108] However, unlike injector block assemblies 424, 524A, and 524B, injector block assembly 624 does not have a protruding portion or protruding premixing chamber that protrudes from the bottom surface of the circular slab portion. Similar to injector block assemblies 524A and 524B (Figures 5A and 5B), the gas flowing through gas channels 626-1 and 626-2 remains separated until it is introduced into the premixing chamber 630, where it is premixed before exiting the premixing chamber 630 and entering the vertical gas diffusion cavity 212. However, unlike injector block assemblies 524A and 524B (Figures 5A and 5B), the premixing chamber 630 does not protrude from the bottom surface of the circular slab portion. Instead, the premixing chamber 630 is formed by a cavity recessed into the circular slab portion, also known as the concept of premixing by a diffuser. In the illustrated embodiment, the cavity has the shape of a partial dome. Furthermore, unlike the injector block assemblies 524A and 524B (Figures 5A and 5B), where the gas exits through outlet channels formed by penetrating the side walls of the protruding premixing chambers 530A and 530B, the gas exits the premixing chamber 630 at a bottom opening and enters the upper opening of the vertical gas diffusion cavity 212. The bottom opening may be covered by a diffusion screen with multiple perforations. Thus, instead of the gas molecules being directed to different side wall portions of the vertical gas diffusion cavity 212, the gas molecules enter the vertical gas diffusion cavity 212 in a relatively randomized direction.

[0109] Figure 6C shows perspective and cross-sectional views of injector block assemblies with multiple gas channels formed according to several embodiments, the multiple gas channels configured to allow gases to flow, at least partially separately, through the injector block assembly to a premixing chamber located within the injector block assembly. In the illustrated embodiment, similar to the injector block assembly 624 described with respect to Figures 6A and 6B, the illustrated injector block assembly 624B includes a disk or circular slab portion with gas channels 626-1B, 626-2B defined inside. In the same manner as the injector block assembly 624 described with respect to Figures 6A and 6B, different gas channels among the multiple gas channels 626-1B, 626-2B in the injector block assembly 624B are configured to accept and flow different gases or gas mixtures from each other at a given time. Similarities between injector block assembly 624 and injector block assemblies 424, 524A, and 524B are not repeated here for brevity.

[0110] However, unlike injector block assembly 624, injector block assembly 624B has a protruding portion or protruding premixing chamber that protrudes from the bottom surface of the circular slab portion. In addition, unlike injector block assembly 624, where the gas flowing through gas channels 626-1, 626-2 remains separated until introduced into the premixing chamber 630, in injector block assembly 624B, gas channels 626-1, 626-2 merge into a single gas channel 626B within injector block assembly 624B before the gas is introduced into the premixing chamber 630B. Furthermore, unlike injector block assembly 624, where the gas exits the premixing chamber at the bottom opening of the premixing chamber 630B and enters the upper opening of the vertical gas diffusion cavity 212 through a diffusion screen with multiple perforations, in injector block assembly 624B, the gas exits through multiple outlet channels formed through the side walls of the premixing chamber 630B that protrude into the vertical gas diffusion cavity 212. The cavity of the premixing chamber 630 may have a partial dome shape, and the outlet channel may be directed towards different sidewall portions of the vertical gas diffusion cavity 212.

[0111] Injector block assembly with composite flow gas channels that improve the uniformity of precursor velocity and concentration. As described above, in addition to showerhead designs in embodiments including a tapered inner surface and a vertical gas diffusion cavity formed in its central region, the inventors have further discovered that further improvements can be made by employing various optimized designs of the injector block assembly. In the various embodiments of the injector block assembly described above, the gas channels are configured to allow the gases to flow through the injector block assembly at least partially separately before the gases are introduced into the vertical gas diffusion cavity. However, the embodiments are not limited thereto. For example, in various alternative embodiments, an integrated gas channel is provided within the gas injector block assembly to combine different gases within the gas injector block assembly before the gases are introduced into a premixing chamber leading to the vertical gas diffusion cavity.

[0112] According to various embodiments, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering the gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line connected thereto, and deliver the gas into the cycle deposition chamber through the vertical cavity. The showerhead assembly further comprises a premixing chamber formed within the injector block assembly, the premixing chamber configured to receive gases separately through gas channels and premix the gases internally to form a gas mixture before the gas mixture is delivered to the vertical cavity.

[0113] In some embodiments, the main inner surface is tapered, radially surrounding the vertical cavity, such that the vertical distance from the substrate to the main inner surface decreases radially outward relative to the center of the substrate. In some embodiments, the internal volume of the premixing chamber has a constricted portion that restricts the gas mixture before delivering it to the vertical cavity. In some embodiments, the premixing chamber has a lower section with multiple nozzles for injecting the gas mixture into the vertical cavity. In some embodiments, the neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees. In some embodiments, the vertical cavity has a volume with a frustoconical shape, and the gas enters the vertical cavity through the narrower upper section and exits into the cycle deposition chamber through the base of the frustoconical section.

[0114] Figure 7 shows top and bottom perspective views of injector block assemblies with premixing chambers formed according to several embodiments, the premixing chambers configured to premix the gas received from the gas line to form a gas mixture, and then deliver the gas mixture into the vertical cavity. In the illustrated embodiments, similar to the injector block assembly 624B described with respect to Figure 6C, the illustrated injector block assembly 724 includes a disk or circular slab portion and a projection that protrudes from the bottom surface of the circular slab portion into the vertical cavity. Similarities between the injector block assembly 724 and the aforementioned injector block assemblies, including injector block assemblies 424, 524A, 524B, 624, and 624B, will not be repeated here for brevity.

[0115] However, unlike the injector block assemblies described above, including injector block assemblies 424, 524A, 524B, 624, and 624B, where the gas flowing through the gas channel remains at least partially separated within the injector block assembly, in the illustrated injector block assembly 724, the gas from the external gas line flows directly into the premixing chamber 730 without flowing separately. The premixing chamber 730 has multiple sections, including an upper receiving section 726, a constricted intermediate section 728, and a lower injection section 732. As shown in the semi-transparent view (far right) of the vertical gas diffusion cavity 212, the lower injection section 732 is partially inserted into the vertical diffusion cavity 212. The constricted intermediate section 728 is substantially smaller in width or diameter compared to the upper receiving section 726 or the lower injection section 732. In this way, the premixing chamber has an hourglass shape. The gas first enters the upper receiving section 726 from the external gas line, where it forms an initial mixture, and then passes through the constricted section 728. After passing through the constricted section 728, the gas mixture flows into the lower injection section 732 and then flows out to the upper opening of the vertical gas diffusion cavity 212 through a plurality of outlet channels formed through the sidewall of the lower injection section 732. Similar to the injector block assembly 624B (Figure 6C), a portion of the premixing chamber 730, including the lower injection section 732, protrudes into the vertical gas diffusion cavity 212. The cavity of the lower injection section 732 may have a partial dome shape, and the outlet channels may be directed to different sidewall portions of the vertical gas diffusion cavity 212. As shown by the cross-sectional view 750C of the cross section of the lower injection section 732 obtained along D-D', the outlet channels may have various directional configurations, as described above with respect to Figure 5C.

[0116] Figure 8 shows top and bottom perspective views of an injector block assembly with a premixing chamber formed according to several other embodiments, the premixing chamber configured to premix the gas received from the gas line to form a gas mixture, and then deliver the gas mixture into the vertical cavity. In the illustrated embodiment, similar to the injector block assembly 724 described with respect to Figure 7, the injector block assembly 824 includes a disk or circular slab portion and a projection that protrudes from the bottom surface of the circular slab portion into the vertical cavity. The similarities between the injector block assembly 824 and the injector block assembly 724 (Figure 7) will not be repeated here for brevity.

[0117] Similar to the injector block assembly 724, in the illustrated injector block assembly 824, gas from an external gas line flows directly into the premixing chamber 830 without flowing separately. Further similar to the injector block assembly 724, the premixing chamber 830 has multiple sections, including an upper receiving section 826 and a constricted section 828. However, unlike the injector block assembly 724 in Figure 7, the premixing chamber 830 does not include a wider lower injection section 732. Instead, the lower injector section 832 of the premixing chamber 830 has substantially the same diameter or width as the constricted section 828. After passing through the constricted section 828, the gas mixture flows into the lower injection section 832 and then flows out to the upper opening of the vertical gas diffusion cavity 212 through multiple outlet channels formed through the sidewalls of the lower injection section 832. The outlet channels can be directed to different sidewall sections of the vertical gas diffusion cavity 212. As shown in the cross-sectional view 850C of the lower injection portion 832 obtained along E-E', the exit channel can have various directional configurations, as described above with respect to Figure 5C. As shown in schematic figures 850D and 850E, the exit channel can be oriented substantially horizontally (e.g., parallel to the main surface of the substrate) or obliquely to the horizontal direction.

[0118] Shower head assembly with diffuser plate for further improving the uniformity of precursor rate and concentration In various embodiments, showerhead assemblies according to some embodiments substantially improve the uniformity of precursor velocity and concentration by flowing gas from a vertical cavity to the substrate without an intervening structure between the showerhead and the substrate. In various other embodiments, the uniformity of precursor velocity and concentration can be further improved by including a diffuser plate between the inner surface of the showerhead and the substrate. The diffuser can have the effect of further randomizing the flux of gas molecules.

[0119] Accordingly, according to some embodiments, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering the gas through the vertical cavity to the cycle deposition chamber. The showerhead assembly further comprises a diffuser plate substantially overlapping the lateral mounting area of ​​the showerhead and positioned vertically between the showerhead and the substrate, the diffuser plate having multiple holes for diffusing the gas received from the vertical cavity before it reaches the substrate.

[0120] Figure 9A shows a side view of a thin film deposition chamber including a shower head assembly having a diffuser plate according to several embodiments. Various features of the shower head assembly follow the various embodiments disclosed elsewhere in this specification. However, unlike the other embodiments disclosed herein, the illustrated thin film deposition chamber 900 includes a diffuser plate between the main inner surface of the shower head and the substrate.

[0121] In one example, the thin film deposition chamber 900 may include a gas inlet 905, a gas nozzle 910, a coolant inlet 915, a lid liner 920, a conical shower head 925, a diffuser plate 930, a heater and liner assembly 935, a substrate or wafer 945, a sub-wafer fluid 947, and a susceptor 949.

[0122] Figure 9B shows the main surface of a diffuser plate with multiple holes for gas diffusion. Figure 9C shows a side view of the diffuser plate 930 shown in Figure 9B. In the illustrated embodiment, the holes 975 of the diffuser plate 930 substantially cover the entire area of ​​the diffuser plate. For example, the holes 975 of the diffuser plate 930 overlap laterally in the central area of ​​the main inner surface, while being omitted from the outermost area of ​​the diffuser plate where through-threaded holes are formed. According to various embodiments, the outer band without holes can correspond to 5%, 10%, 15%, 20%, 25%, 30% of the radius of the diffuser plate, or any value within the range defined by these values.

[0123] The pattern of holes in a diffuser plate can be optimized for a specific flow pattern. For example, in some embodiments, the holes form a random pattern. In some other patterns, the holes can have a regular pattern. Without limiting them, Figures 10A to 10C schematically show various exemplary hole patterns that can be implemented in the diffuser plate shown in Figures 9B and 9C. A regular pattern may include substantially constant distances between adjacent holes or adjacent groups of holes.

[0124] Referring to Figure 10A, a portion 1030A of the diffuser plate shows a regular pattern of holes including rectangular arrays. The rectangular arrays include rows with substantially constant row-to-row distances and columns with substantially constant column-to-column distances.

[0125] Referring to Figures 10B and 10C, the diffuser plate portions 1030B and 1030C show a regular pattern containing circular arrays, each containing multiple rings, each having multiple holes at a constant radius. In the diffuser plate portion 1030B shown in Figure 10B, the holes of adjacent rings lie on a common radial line extending outward from the center of the diffuser plate. Furthermore, the angular spacing between adjacent holes in a given ring may be substantially constant. In contrast, in the diffuser plate portion 1030C shown in Figure 10C, the holes of adjacent rings do not lie on a common radial line extending outward from the center of the diffuser plate. Furthermore, the angular spacing between adjacent holes in a given ring may be substantially different.

[0126] Figure 10D shows the main surface of a diffuser plate having multiple concentric radius zones, where different radius zones have holes with different arrangements. In some embodiments, one or both of the hole pattern and / or hole size may differ in different zones. In some other embodiments, one or both of the area density and / or size of the holes increase with increasing distance from the central axis of the showerhead. In the illustrated diffuser plate, the density and pattern of the holes are generally similar for different zones, but the size of the holes increases from the center to the edges. In one example, the diffuser plate may include three different zones, namely zone 1 1005, zone 2 1015, and zone 3 1025, where each zone may have a similar hole density and pattern, but the hole size increases from zone 1 to zone 3.

[0127] Shower head assembly with blocking plate for further improvement of precursor rate and concentration uniformity In various embodiments, showerhead assemblies according to some embodiments substantially improve the uniformity of precursor velocity and concentration by flowing gas from a vertical cavity to the substrate without an intervening structure between the showerhead and the substrate. In various other embodiments, the uniformity of precursor velocity and concentration can be further improved by including a blocking plate between the inner surface of the showerhead and the substrate. Among other effects, the blocking plate can have the effect of diverting a portion of the flux that would otherwise hit the central region of the substrate.

[0128] Accordingly, according to some embodiments, a showerhead assembly configured to deliver multiple gases to a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity formed in its central region for delivering gas to the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering gas through the vertical cavity to the cycle deposition chamber. The showerhead assembly further comprises a blocking plate positioned in the central region laterally and positioned between the injection nozzles and the substrate vertically.

[0129] Figure 11 shows a side view of a thin film deposition chamber including a showerhead assembly having a diffuser plate and a blocking plate according to several embodiments. The illustrated thin film deposition chamber 1100 includes a showerhead assembly 1101, such as a shaping gas volumetric cone showerhead; a substrate or wafer 1103; and a blocking plate 1105, such as a flow equalizer, positioned vertically between the injection nozzle 1102 and the diffuser plate 1110 and laterally below the injection nozzle 1102. In the illustrated embodiment, the blocking plate 1105 has a lateral dimension smaller than the minimum lateral dimension of the vertical cavity so that the blocking plate can be inserted at least partially vertically into the vertical cavity.

[0130] Figure 12A shows a diagram of the gas flow pattern through the vertical cavity of a showerhead without a blocking plate. As illustrated, in the absence of a blocking plate, the gas velocity and concentration may be highest near the central region 1205 of the substrate, for example, where there is no flow equalizer. To mitigate this, Figure 12B shows a diagram of the gas flow pattern through the vertical cavity of a showerhead having a vertically elongated blocking plate 1210 according to some embodiments. The illustrated blocking plate 1210, also called a flow equalizer A, comprises a cylindrical portion having a vertically elongated vertical length V1 (reasonable length in millimeters) such as 1 mm to 100 mm, substantially larger in the vertical direction than the diameter D1 (reasonable length in millimeters), such as 1 mm to 100 mm (e.g., V1: 40 mm, D1: 24 mm). Figure 12C shows a diagram of the gas flow pattern through the vertical cavity of a showerhead having a vertically elongated blocking plate 1220 according to some other embodiments. Similar to the blocking plate shown in Figure 12B, the illustrated blocking plate has a cylindrical portion having a vertical length V2 (reasonable length in millimeters) of 1 mm to 100 mm that extends vertically substantially larger than the diameter D2 (reasonable length in millimeters) of 1 mm to 100 mm (e.g., V2: 30 mm, D2: 24 mm). However, unlike the blocking plate shown in Figure 12B, the blocking plate shown in Figure 12C, also called flow equalizer B, has a tip portion 1250 that is sharpened toward the substrate and has a height H2 (reasonable length in millimeters) of 1 mm to 100 mm (e.g., H2: 10 mm).

[0131] Figure 13 shows a cross-sectional side view of a thin film deposition chamber including a showerhead assembly having a diffuser plate to which a stopper plate is attached according to several other embodiments. Unlike the stopper plates shown in Figures 12B and 12C, the illustrated stopper plate has a cylindrical portion whose vertical length extending vertically is substantially smaller than the diameter of the stopper plate. The stopper plate 1305 is attached to and suspended from the diffuser plate 1310 by a plurality of anchors 1315.

[0132] Shower head assembly in which the gap between the main surface of the shower head and the substrate changes non-linearly. As described above, one of the advantages of the various showerhead assemblies disclosed herein is the substantial reduction in the free volume between the showerhead and the substrate. Such a reduction in volume leads to improved throughput, among other things, because it reduces the time required to exhaust the gas between different exposures.

[0133] Accordingly, according to some embodiments, a showerhead assembly configured to deliver multiple gases into a cycle deposition chamber comprises a showerhead having a main inner surface configured to face a substrate, the main inner surface surrounding a vertical cavity that delivers gas formed in its central region into the cycle deposition chamber. The showerhead assembly further comprises an injector block assembly positioned above the showerhead, the injector block assembly configured to receive gas via an external gas line to which it is connected, and having multiple injection nozzles for delivering the gas through the vertical cavity into the cycle deposition chamber. The main inner surface of the showerhead has different angles with respect to the main surface of the substrate at different radial distances from the central axis of the showerhead. The vertical gap between the main inner surface of the showerhead and the main surface of the substrate changes non-linearly with respect to the radial distance from the central axis of the showerhead.

[0134] Figure 14 shows a side view of a thin film deposition chamber including a showerhead assembly according to several embodiments, where the angle of the main inner surface of the showerhead assembly with respect to the main surface of the substrate differs at different radial distances from the central axis of the showerhead. In some embodiments, the thin film deposition chamber 1400 includes a main inner surface 1405 having an angle 1410 which can have multiple values. In some other embodiments, the angle can change continuously. In the illustrated embodiments, the angle made by the main inner surface of the showerhead with respect to the main surface of the substrate decreases radially from the central axis of the showerhead.

[0135] In some embodiments, the varying angle between the main inner surface of the showerhead and the substrate can be a value within the range described above with respect to the neck angle, for example, less than 12°, less than 10°, less than 8°, less than 6°, less than 4°, or a value within the range defined by any of these values. In some embodiments, these values ​​can represent, for example, the highest angle toward the center of the main surface. The outer angle can have a lower value. In some embodiments, at least the outer portion of the main surface may be at an angle of 0°, i.e., at least the outer portion of the main surface may be substantially parallel to the substrate surface.

[0136] Applicable Figure 15 shows, as an example, an exemplary precursor delivery sequence for delivering one or more precursors using a temperature-controlled showerhead assembly according to several embodiments. The first and second precursor inlets are connected to the first and second precursor delivery lines, arranged as described above with respect to Figure 1, for example. The ALD cycle includes a first subcycle for exposing the substrate to the first precursor and a second subcycle for exposing the substrate to the second precursor. As described above, each of the precursor ALD valves is a three-way valve, and in some embodiments, a continuous purge (CP) gas, such as an inert gas, can be flowed through the ALD valve while the substrate is exposed to the first and / or second precursor. When introduced simultaneously into the reactor, the CP gas and precursors are mixed in a vertical gas diffusion cavity (e.g., 212 in Figure 2A) before being introduced into the main reactor. In the illustrated embodiments, each of the first and second subcycles further includes a rapid purge (RP) with an inert gas after exposure to one or both of the first and second precursors, respectively. Rapid purging can be performed using the purge ALD valve as described above. Rapid purging is on a larger scale than continuous purging.

[0137] Deposition systems according to some embodiments are particularly advantageous for forming thin films on substrates having a high aspect ratio structure having an aperture width smaller than a value defined by 1 micron, 500 nm, 200 nm, 100 nm, 50 nm, 20 nm, or any of these values; an aspect ratio larger than a value defined by 5, 10, 20, 50, 100, 200, or any of these values; and an area density such that the surface area is larger than the surface area of ​​the flat substrate described above. Substrates having such topography can be conformally coated with thin films containing TiN, TiSiN, and / or TiAlN according to embodiments, with a step coverage as defined above having a step coverage greater than 50%, 60%, 70%, 80%, 90%, 95%, or greater than a value defined by any of these values.

[0138] High uniformity is one measure of conformability in the context of high aspect ratio structures, referred to herein as step coverage. High aspect ratio structures may be, for example, vias, holes, trenches, cavities, or similar structures. As an exemplary example, Figure 16 schematically shows a semiconductor structure 1600 in which an exemplary high aspect ratio structure 1616 is formed to illustrate some exemplary metrics for defining and / or measuring the conformability of a thin film formed on a high aspect ratio structure. The illustrated high aspect ratio structure 1616 is covered with a thin film 1612, such as a TiN layer deposited according to some embodiment, and the thin film has different thicknesses in different parts. As described herein, a high aspect ratio structure has an aspect ratio greater than 1, which is defined, for example, the ratio of depth or height (H) divided by width (W) in the opening region of the high aspect ratio structure 1616. In the illustrated example, the high aspect ratio structure 1616 is a via formed through a dielectric layer 1608, such as an intermetallic dielectric (ILD) layer formed on a semiconductor substrate 1604, with the bottom surface of the high aspect ratio structure 1616 exposing the underlying semiconductor substrate 1604. The thin film 1612 can cover different surfaces of the high aspect ratio structure 1616 with different thicknesses. As described herein, one metric for defining or measuring the conformability of a thin film formed at a high aspect ratio is called step coverage. Step coverage may be defined as the ratio between the thickness of the thin film in the lower or lower region of the high aspect ratio structure and the thickness of the thin film in the upper or upper region of the high aspect ratio structure. The upper or upper region may be a region at a relatively small depth of the high aspect ratio structure, such as 0-10% or 0-25% of H measured from the top of the opening. The lower or lower region may be a region at a relatively large depth within the high aspect ratio structure, for example, 90-100% or 75-100% of H measured from the top of the opening. In some high aspect ratio structures, step coverage can be defined or measured by the ratio of the thickness of the thin film 1612A formed on the bottom surface to the thin film 1612C formed on the upper or upper sidewall surface of the high aspect ratio structure.However, it will be understood that some high aspect ratio structures may not have a clearly defined base or a base with a small radius of curvature. In these structures, step coverage can be more consistently defined or measured by the ratio of the thickness of the thin film 1612B formed on the lower or lower sidewall surface to the thickness of the thin film 1612C formed on the upper or upper sidewall surface of the high aspect ratio structure.

[0139] The deposition systems according to some embodiments result in a substantial improvement in step coverage in high aspect ratio structures, at least in part due to the relatively constant temperature uniformity of the showerhead and the effective diffusion and / or missing of the precursor and purge gas. By using the temperature-controlled showerhead assemblies according to some embodiments, high aspect ratio structures having aspect ratios exceeding values ​​within the range defined by 1, 2, 5, 10, 20, 50, 100, 200, or any of these values, can be conformally coated with a thin film such as a TiN film according to some embodiments with a step coverage defined herein having values ​​exceeding 70%, 80%, 90%, 95%, or within the range defined by any of these values. Thus, the resulting step coverage values ​​represent an improvement of 5%, 10%, 15%, 20%, or within the range defined by any of these values, compared to the corresponding step coverage values ​​obtained using an equivalent thin-film deposition system having a gas delivery line without high-conductance line portions.

[0140] Further embodiments Further embodiments of the shower head assembly are disclosed below under the headings Exemplary Embodiments I to III. Exemplary Embodiment I: 1. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It comprises a vertical cavity formed through the central region and a main inner surface configured to face the substrate, the main inner surface having a showerhead that radially surrounds the vertical cavity, An injector block assembly positioned above the showerhead to deliver gas from outside the cycle deposition chamber through a vertical cavity into the cycle deposition chamber, Multiple gas channels formed within the injector block assembly and configured to allow gas to flow separately, at least partially, through the injector block assembly It is equipped with, A showerhead assembly in which gas channels exiting the injector block assembly extend in different directions relative to each other and in different directions relative to the vertical axis intersecting the substrate. 2. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, A showerhead comprising a vertical cavity formed through a central region and a main inner surface configured to face the substrate, wherein the main inner surface radially surrounds the vertical cavity and is tapered such that the vertical distance from the substrate to the main inner surface decreases radially outward relative to the center of the substrate, An injector block assembly positioned above the showerhead to deliver gas from outside the cycle deposition chamber through a vertical cavity into the cycle deposition chamber, Multiple gas channels formed within the injector block assembly and configured to allow gas to flow through the injector block assembly at least partially separately, It is equipped with, A shower head assembly in which the neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees. 3. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It comprises a vertical cavity formed through the central region and a main inner surface configured to face the substrate, the main inner surface having a showerhead that radially surrounds the vertical cavity, An injector block assembly positioned above the showerhead to deliver gas from outside the cycle deposition chamber through a vertical cavity into the cycle deposition chamber, Multiple gas channels formed within the injector block assembly and configured to allow gas to flow through the injector block assembly at least partially separately, It is equipped with, The vertical cavity has a volume with a frustoconical shape, and the gas enters the vertical cavity through the narrower upper part and exits into the cycle deposit chamber through the wider base of the frustoconical showerhead assembly. 4. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, A shower head comprising a vertical cavity formed through the central region and a main inner surface configured to face the substrate, An injector block assembly positioned above the showerhead to deliver gas from outside the cycle deposition chamber through a vertical cavity into the cycle deposition chamber, A plurality of gas channels formed within the injector block assembly and configured to allow one or more gases to flow separately through the injector block assembly, A premixing chamber formed within the injector block assembly It is equipped with, A showerhead assembly in which a premixing chamber is configured to receive gases separately through gas channels and premix the gases internally to form a gas mixture before the gas mixture is delivered to the vertical cavity. 5. The shower head assembly according to Embodiment 2, 3, or 4, wherein the gas channels exiting the injector block assembly extend in different directions relative to each other and in different directions with respect to a vertical axis intersecting the substrate. 6. The shower head assembly according to Embodiment 1, 3, or 4, wherein the neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees. 7. The showerhead assembly according to Embodiments 1, 2, or 4, wherein the vertical cavity has a volume having the shape of a frustocone, and gas enters the vertical cavity through the narrower upper part and exits into the cycle deposit chamber through the base of the frustocone. 8. The shower head assembly according to Embodiment 1, 2, or 3, further comprising an injector block assembly, the premixing chamber formed internally, the premixing chamber being configured to receive gases separately through gas channels and premix the gases internally to form a gas mixture to be delivered to a vertical cavity. 9. The shower head assembly according to any one of the above embodiments, wherein the main inner surface of the shower head is tapered such that the vertical distance from the substrate to the main inner surface decreases radially outward with respect to the center of the substrate. 10. The shower head assembly according to any one of the above embodiments, wherein the gas channels exiting the injector block assembly extend in different directions. 11. The shower head assembly according to Embodiment 10, wherein the different directions are inclined with respect to the vertical axis of the cycle deposition chamber and do not directly intersect with the main surface of the substrate. 12. A shower head assembly according to any one of the above embodiments, wherein the different gas channels of the multiple gas channels are configured to carry different gases or gas mixtures from one another. 13. The shower head assembly according to any one of the above embodiments, wherein the vertical cavity has a curved inner side wall that forms a portion of the inner surface of the shower head in a continuous manner with the main inner surface. 14. The shower head assembly according to any one of the above embodiments, wherein the vertical cavity has a curved side wall having the shape of the inner surface of a frustum of a cone having a conical angle of 8 to 12 degrees with respect to the vertical axis of the cycle deposition chamber. 15. The shower head assembly according to any one of the above embodiments, wherein the injector block assembly has an upper surface having openings for gas channels configured to receive gas from a plurality of gas lines, and a lower surface coupled to an upper opening of a vertical cavity into which gas flows. 16. The shower head assembly according to any one of the above embodiments, wherein the solid body portion of the shower head has a main surface configured to face a substrate, and the main surface has a constant gradient with respect to the main surface of the substrate such that the thickness of the solid body portion increases toward the edge region of the solid body portion. 17. A shower head assembly according to any one of the above embodiments, wherein the vertical cavity extends through the entire thickness of the shower head in the central region. 18. The shower head assembly according to any one of the above embodiments, wherein the gas channel is configured to allow gas to enter the vertical cavity from the upper opening of the vertical cavity toward the substrate at a certain vertical depth. 19. The shower head assembly according to Embodiment 18, wherein the gas channels are configured such that gases flowing through different gas channels flow separately to the vertical cavity without mixing before being delivered to the vertical cavity. 20. The shower head assembly according to embodiment 18 or 19, wherein the gas channels exiting the injector block assembly extend in different directions intersecting different sidewall portions of the vertical cavity. 21. A showerhead assembly according to any one of embodiments 18 to 20, wherein the gas channels are configured to allow different gases to exit the injector block assembly at different vertical depths of the vertical cavity. 22. A shower head assembly according to any one of embodiments 18 to 21, wherein the injector block assembly has a protruding portion that projects vertically into a vertical cavity, and a gas channel extends into the protruding portion such that gas exits from the protruding portion to a certain vertical depth into the vertical cavity. 23. The shower head assembly according to embodiment 22, wherein the protruding portion comprises a solid cylindrical portion in which a gas channel extends internally. 24. A shower head assembly according to any one of embodiments 18 to 23, wherein each gas channel extending into a protruding portion comprises a main channel through which the corresponding gas ultimately passes before entering a vertical cavity. 25. The shower head assembly according to embodiment 24, wherein the outlet channel extends outward from the main channel. 26. The shower head assembly according to embodiment 24 or 25, wherein the outlet channel extends horizontally parallel to the main surface of the substrate. 27. A shower head assembly according to any one of embodiments 24 to 26, wherein outlet channels for different gases exit from a protruding portion at different vertical depths into a vertical cavity. 28. A shower head assembly according to any one of embodiments 1 to 17, further comprising a premixing chamber extending from the lower surface of the injector block assembly into a vertical cavity. 29. The shower head assembly according to any one of the above embodiments, wherein the gas channels are configured such that one or more of the gases flowing through different gas channels flow separately into the premixing chamber without being mixed before being delivered into the premixing chamber. 30. The shower head assembly according to any one of the above embodiments, wherein the gas channel is configured to allow gas to enter the vertical cavity from the upper opening of the vertical cavity toward the substrate at a certain vertical depth. 31. The shower head assembly according to embodiment 28 or 29, wherein the gas channels exiting the injector block assembly extend in different directions that intersect different side wall portions of the premixing chamber. 32. A shower head assembly according to any one of embodiments 28 to 31, wherein the premixing chamber has an upper opening directly coupled to the injector block assembly for directly receiving gas from the injector block assembly. 33. A shower head assembly according to any one of embodiments 28 to 32, wherein the premixing chamber comprises a hollow cavity, and the hollow cavity has one or more outlet channels formed through the side walls of the hollow cavity. 34. A shower head assembly according to any one of embodiments 28 to 33, wherein the hollow cavity is defined by a bottom wall and a side wall connecting the bottom surface of the injector block assembly to the bottom wall. 35. The shower head assembly according to embodiment 34, wherein the gas channels exiting the injector block assembly extend in different directions intersecting different portions of the bottom wall. 36. A shower head assembly according to any one of embodiments 28 to 35, wherein the hollow cavity has a cylindrical shape with curved side walls. 37. A shower head assembly according to any one of embodiments 28 to 36, wherein the premixing chamber comprises one or more outlet channels formed through the lower part of the side wall. 38. The shower head assembly according to embodiment 37, wherein the outlet channel extends outward from the hollow cavity. 39. The shower head assembly according to embodiment 37 or 38, wherein the outlet channel extends horizontally parallel to the main surface of the substrate. 40. The outlet channel surrounds the hollow cavity of the premixing chamber, as described in any one of embodiments 37 to 39 of the showerhead assembly. 41. The shower head assembly according to any one of embodiments 37 to 40, wherein the outlet channel is formed at the same vertical height. 42. A shower head assembly according to any one of embodiments 1 to 17, further comprising a premixing chamber formed within an injector block assembly. 43. The shower head assembly according to embodiment 42, wherein the premixing chamber is formed as a recessed cavity within the injector block assembly. 44. The shower head assembly according to embodiment 42 or 43, wherein the gas channels are configured such that one or more gases flowing through different gas channels flow separately into the premixing chamber without being mixed before being delivered into the premixing chamber. 45. A shower head assembly according to any one of embodiments 42 to 44, wherein the gas channel is configured to allow gas to enter the premixing chamber at the upper opening of the premixing chamber. 46. ​​A shower head assembly according to any one of embodiments 42 to 45, wherein the gas channel exiting the injector block assembly into the premixing chamber extends in a different direction. 47. A shower head assembly according to any one of embodiments 42 to 46, further comprising a diffuser plate separating a premixing chamber from a vertical cavity. 48. The showerhead assembly according to Embodiment 47, wherein the diffuser plate is a porous plate configured to substantially mix the gas entering the premixing chamber before it exits the premixing chamber into a vertical cavity. 49. The shower head assembly according to embodiment 47 or 48, wherein the gas channels exiting the injector block assembly extend in different directions intersecting different portions of the diffuser plate. 50. A shower head assembly according to any one of embodiments 47 to 49, wherein the diffuser plate comprises a plurality of holes having a diameter substantially smaller than the diameter of the gas channels. 51. The shower head assembly according to any one of embodiments 42 to 50, wherein the premixing chamber has a dome shape with a curved inner surface. 52. A shower head assembly according to any one of embodiments 42 to 51, wherein the mixing chamber is positioned above the vertical cavity and does not overlap with the vertical cavity in the vertical direction. 53. The shower head assembly is the shower head assembly described in any one of the embodiments described above, further comprising any one of the shower head assemblies of Embodiment III. Exemplary Embodiment II: 1. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, The injector block assembly comprises a main inner surface configured to face the substrate, the main inner surface having a showerhead that surrounds a vertical cavity that delivers gas formed in its central region to the cycle deposition chamber, and positioned above the showerhead, the injector block assembly is configured to receive gas via an external gas line connected thereto, and has multiple injection nozzles for delivering gas through the vertical cavity to the cycle deposition chamber. A premixing chamber is formed within the injector block assembly and is configured to premix the gas received from the gas line and form a gas mixture internally before delivering the gas mixture to the vertical cavity, It is equipped with, A showerhead assembly having a constriction section within the internal volume of a premixing chamber that restricts the gas mixture before it is supplied to a vertical cavity. 2. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It has a main inner surface configured to face the substrate, and the main inner surface has a showerhead surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber, Located above the showerhead, the injector block assembly is configured to receive gas via an external gas line to which it is connected, and has multiple injection nozzles for delivering the gas through a vertical cavity to the cycle deposition chamber. A premixing chamber is formed within the injector block assembly and is configured to premix the gas received from the gas line and form a gas mixture internally before delivering the gas mixture to the vertical cavity, It is equipped with, The premixing chamber is a showerhead assembly having a lower section with multiple nozzles for injecting the gas mixture into a vertical cavity. 3. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It has a main inner surface configured to face the substrate, and the main inner surface has a showerhead surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber, Located above the showerhead, the injector block assembly is configured to receive gas via an external gas line to which it is connected, and has multiple injection nozzles for delivering the gas through a vertical cavity to the cycle deposition chamber. A premixing chamber is formed within the injector block assembly and is configured to premix the gas received from the gas line and form a gas mixture internally before delivering the gas mixture to the vertical cavity, It is equipped with, A shower head assembly in which the neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees. 4. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It has a main inner surface configured to face the substrate, and the main inner surface has a showerhead surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber, Located above the showerhead, the injector block assembly is configured to receive gas via an external gas line to which it is connected, and has multiple injection nozzles for delivering the gas through a vertical cavity to the cycle deposition chamber. A premixing chamber is formed within the injector block assembly and is configured to premix the gas received from the gas line and form a gas mixture internally before delivering the gas mixture to the vertical cavity, It is equipped with, The vertical cavity has a volume with a frustoconical shape, and the gas enters the vertical cavity through the narrower upper part and exits the cycle deposit chamber through the base of the frustoconical showerhead assembly. 5. The showerhead assembly according to Embodiment 2, 3, or 4, wherein the internal volume of the premixing chamber has a constricted portion that restricts the gas mixture before delivering it to the vertical cavity. 6. The shower head assembly according to Embodiment 1, 3, or 4, wherein the premixing chamber has a lower section comprising multiple nozzles for injecting the gas mixture into a vertical cavity. 7. The shower head assembly according to Embodiment 1, 2, or 4, wherein the neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees. 8. The showerhead assembly according to Embodiment 1, 2, or 3, wherein the vertical cavity has a volume having the shape of a frustocone, and gas enters the vertical cavity through the narrower upper part and exits into the cycle deposit chamber through the base of the frustocone. 9. The shower head assembly according to any of the above embodiments, wherein the internal volume of the premixing chamber has a narrow portion located between wider portions in the vertical direction, such that the premixing chamber has an hourglass shape. 10. A shower head assembly according to any of the above embodiments, wherein the nozzle at the bottom of the premixing chamber comprises a channel extending substantially parallel to the main surface of the substrate. 11. A shower head assembly according to any one of embodiments 1 to 9, wherein the nozzle at the bottom of the premixing chamber has a channel extending in a direction perpendicular to the main surface of the substrate. 12. A shower head assembly according to any of the above embodiments, wherein the nozzle at the bottom of the premixing chamber has a channel extending in a direction perpendicular to the radial direction from the central axis of the premixing chamber. 13. The shower head assembly according to any one of the above embodiments, wherein the main inner surface of the shower head is tapered such that the vertical distance from the substrate to the main inner surface decreases radially outward with respect to the center of the substrate. 14. The shower head assembly according to any one of the above embodiments, wherein the vertical cavity has a curved inner side wall that forms a portion of the inner surface of the shower head in a continuous manner with the main inner surface. 15. The shower head assembly according to any one of the above embodiments, wherein the vertical cavity has a curved side wall having the shape of the inner surface of a frustum of a cone having a conical angle of 8 to 12 degrees with respect to the vertical axis of the cycle deposition chamber. 16. The shower head assembly according to any one of the above embodiments, wherein the injector block assembly has an upper surface having an opening configured to receive gas from a plurality of gas lines, and a lower surface coupled to an upper opening of a vertical cavity into which gas flows. 17. The shower head assembly according to any one of the above embodiments, wherein the solid body portion of the shower head has a main surface configured to face a substrate, and the main surface has a constant gradient with respect to the main surface of the substrate such that the thickness of the solid body portion increases toward the edge region of the solid body portion. 18. A shower head assembly according to any one of the above embodiments, wherein the vertical cavity extends through the entire thickness of the shower head in the central region. 19. A shower head assembly according to any one of the above embodiments, wherein gas channels are formed inside the injector block assembly, and the gas channels are configured such that gases flowing through different gas channels flow separately into the vertical cavity without mixing before being delivered into the vertical cavity. 20. The shower head assembly according to any one of the above embodiments, wherein the injection nozzle exiting the premixing chamber extends in different directions intersecting different side wall portions of the vertical cavity. 21. The shower head assembly according to Embodiment 20, wherein the injection nozzle exits the premixing chamber at different vertical depths of the vertical cavity. 22. The shower head assembly according to any one of the above embodiments, wherein the injector block assembly comprises a projection that protrudes vertically into a vertical cavity, and the injector nozzle extends into the projection such that gas exits from the projection at a certain vertical depth into the vertical cavity. 23. The shower head assembly according to embodiment 22, wherein the protruding portion comprises a solid cylindrical portion in which a gas channel extends internally. 24. The shower head assembly according to any one of the above embodiments, wherein the injection nozzle extends horizontally parallel to the main surface of the substrate. 25. The shower head assembly according to any one of the above embodiments, wherein the injection nozzle protrudes from a portion at different vertical depths into a vertical cavity. 26. The shower head assembly according to any one of the above embodiments, wherein gas channels are formed inside the injector block assembly, and the gas channels are configured such that one or more gases flowing through different gas channels flow separately into the premixing chamber without being mixed before being delivered into the premixing chamber. 27. The shower head assembly according to any one of the above embodiments, wherein the gas channel is configured to allow gas to enter the vertical cavity from the upper opening of the vertical cavity toward the substrate at a certain vertical depth. 28. The shower head assembly according to any one of the above embodiments, wherein the injection nozzle exiting the premixing chamber extends in different directions intersecting different side wall portions of the vertical cavity. 29. The shower head assembly according to any one of the above embodiments, wherein the premixing chamber has an upper opening directly coupled to the injector block assembly for directly receiving gas from the injector block assembly. 30. The shower head assembly according to any one of the above embodiments, wherein the premixing chamber comprises a hollow cavity, and the hollow cavity has one or more outlet channels formed through the side walls of the hollow cavity. 31. The shower head assembly according to Embodiment 30, wherein the hollow cavity is defined by a bottom wall and a side wall connecting the bottom surface of the injector block assembly to the bottom wall. 32. A shower head assembly according to any one of the above embodiments, further comprising a diffuser plate separating a premixing chamber from a vertical cavity. 33. The showerhead assembly according to Embodiment 32, wherein the diffuser plate is a porous plate configured to substantially mix the gas entering the premixing chamber before it exits the premixing chamber into the vertical cavity. 34. The shower head assembly according to embodiment 32 or 33, wherein the gas channels exiting the injector block assembly extend in different directions intersecting different portions of the diffuser plate. 35. A shower head assembly according to any one of embodiments 32 to 34, wherein the diffuser plate comprises a plurality of holes having a diameter substantially smaller than the diameter of the gas channels. 36. The shower head assembly according to any one of the above embodiments, wherein the premixing chamber has a dome shape with a curved inner surface. 37. The shower head assembly according to any one of the above embodiments, wherein the premixing chamber is positioned above the vertical cavity and does not overlap with the vertical cavity in the vertical direction. 38. The shower head assembly is the shower head assembly described in any one of the above embodiments, further illustrated by any of the shower head assemblies of Embodiment III. Exemplary Embodiment III: 1. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It has a main inner surface configured to face the substrate, and the main inner surface has a showerhead surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber, Located above the showerhead, the injector block assembly is configured to receive gas via an external gas line to which it is connected, and has multiple injection nozzles for delivering the gas through a vertical cavity to the cycle deposition chamber. A diffuser plate substantially overlaps with the lateral mounting area of ​​the shower head, is positioned vertically between the shower head and the substrate, and has multiple holes for diffusing the gas received from the vertical cavity before it reaches the substrate, The shower head assembly is included. 2. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It has a main inner surface configured to face the substrate, and the main inner surface has a showerhead surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber, Located above the showerhead, the injector block assembly is configured to receive gas via an external gas line to which it is connected, and has multiple injection nozzles for delivering the gas through a vertical cavity to the cycle deposition chamber. A blocking plate positioned in the central region in the lateral direction and positioned between the injection nozzle and the substrate in the vertical direction. A shower head assembly equipped with this feature. 3. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It has a main inner surface configured to face the substrate, and the main inner surface has a showerhead surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber, Located above the showerhead, the injector block assembly is configured to receive gas via an external gas line to which it is connected, and has multiple injection nozzles for delivering the gas through a vertical cavity to the cycle deposition chamber. It is equipped with, A shower head assembly in which the main inner surface of the shower head has different angles relative to the main surface of the substrate at different radial distances from the central axis of the shower head. 4. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It has a main inner surface configured to face the substrate, and the main inner surface has a showerhead surrounding a vertical cavity that delivers the gas formed in its central region to the cycle deposition chamber, Located above the showerhead, the injector block assembly is configured to receive gas via an external gas line to which it is connected, and has multiple injection nozzles for delivering the gas through a vertical cavity to the cycle deposition chamber. It is equipped with, A showerhead assembly in which the vertical gap between the main inner surface of the showerhead and the main surface of the substrate changes non-linearly with respect to the radial distance from the central axis of the showerhead. 5. The shower head assembly according to Embodiment 2, 3, or 4, further comprising: a diffuser plate that substantially overlaps with the lateral mounting area of ​​the shower head and is positioned vertically between the shower head and the substrate, and has multiple holes for diffusing gas received from a vertical cavity before it reaches the substrate. 6. The shower head assembly according to Embodiment 1, 3, or 4, further comprising: a blocking plate positioned in the central region in the lateral direction and positioned between the injection nozzle and the substrate in the vertical direction. 7. The shower head assembly according to Embodiment 1, 2, or 4, wherein the main inner surface of the shower head has different angles with respect to the main surface of the substrate at different radial distances from the central axis of the shower head. 8. The shower head assembly according to Embodiment 1, 2, or 3, wherein the vertical gap between the main inner surface of the shower head and the main surface of the substrate changes non-linearly with respect to the radial distance from the central axis of the shower head. 9. The shower head assembly according to any one of the above embodiments, wherein the holes in the diffuser plate substantially extend over the entire area of ​​the diffuser plate. 10. A shower head assembly according to any one of embodiments 1 to 8, wherein the holes in the diffuser plate overlap the central region of the main inner surface in the lateral direction, but are excluded from the outer region of the diffuser plate corresponding to the outer 20% of the radius of the diffuser plate. 11. A shower head assembly according to any one of the above embodiments, wherein the holes form a random pattern. 12. The shower head assembly according to any one of the above embodiments, wherein the holes form a regular pattern in which the distance between adjacent holes or groups of adjacent holes is substantially constant. 13. The shower head assembly according to Embodiment 12, wherein the regular pattern comprises a rectangular array including rows having substantially constant row-to-row distances and columns having substantially constant column-to-column distances. 14. The shower head assembly according to Embodiment 12, wherein the regular pattern comprises a circular array including a plurality of rings, each having a plurality of holes at a certain radius. 15. The shower head assembly according to Embodiment 14, wherein the holes of adjacent rings lie on a common radial line extending outward from the center of the diffuser plate. 16. The shower head assembly according to Embodiment 14, wherein the holes of adjacent rings among the rings are not on a common radial line extending outward from the center of the diffuser plate. 17. The shower head assembly according to any one of the above embodiments, wherein the diffuser plate comprises multiple concentric radius zones, and the different radius zones have holes arranged in different configurations. 18. The shower head assembly according to Embodiment 17, wherein different radius zones have different hole area densities. 19. A shower head assembly according to embodiment 17 or 18, wherein different radius zones have different hole sizes. 20. A shower head assembly according to any one of embodiments 17 to 19, wherein one or both of the area density and size of the holes increase as the distance from the central axis of the shower head increases. 21. The shower head assembly according to any one of the above embodiments, wherein the blocking plate is positioned vertically between the injection nozzle and the diffuser plate. 22. The shower head assembly according to any one of the above embodiments, wherein the blocking plate has a lateral dimension smaller than the minimum lateral dimension of the vertical cavity. 23. The blocking plate is inserted vertically, at least partially, into the vertical cavity of the shower head assembly according to any one of the above embodiments. 24. The shower head assembly according to any one of the above embodiments, wherein the blocking plate comprises a cylindrical portion whose vertical length extending vertically is substantially greater than its diameter. 25. The shower head assembly according to any one of embodiments 1 to 20, wherein the blocking plate comprises a cylindrical portion whose vertical length extending vertically is substantially less than its diameter. 26. The blocking plate is attached to the diffuser plate, and is part of the shower head assembly according to any one of the above embodiments. 27. The shower head assembly according to any one of the above embodiments, wherein the main inner surface of the shower head forms an angle with respect to the main surface of the substrate that decreases radially from the central axis of the shower head. 28. The shower head assembly according to any one of the above embodiments, wherein the main inner surface of the shower head forms an angle with respect to the main surface of the substrate that decreases continuously in the radial direction from the central axis of the shower head. 29. A shower head assembly according to any one of the above embodiments, wherein the vertical gap between the main inner surface of the shower head and the main surface of the substrate is reduced in the radial direction. 30. A shower head assembly according to any one of the above embodiments, wherein the vertical gap between the main inner surface of the shower head and the main surface of the substrate decreases continuously in the radial direction. 31. A shower head assembly according to any one of the above embodiments, wherein the outer portion of the main inner surface of the shower head is substantially parallel to the main surface of the substrate. 32. A shower head assembly according to any one of the above embodiments, wherein the vertical gap between the outer portion of the main inner surface of the shower head and the main surface of the substrate is substantially constant. 33. The showerhead assembly according to any one of the above embodiments, wherein the vertical cavity has a volume having the shape of a frustocone, and gas enters the vertical cavity through the narrower upper part and exits into the cycle deposit chamber through the base of the frustocone. 34. The shower head assembly is further described in any one of the embodiments, with the shower head assembly being one of the exemplary embodiment I or exemplary embodiment II.

[0141] Further considerations Although the present invention has been described herein with reference to specific embodiments, these embodiments are not intended to limit the invention but are provided for illustrative purposes only. It will be apparent to those skilled in the art that modifications and improvements can be made without departing from the spirit and scope of the invention.

[0142] Such simple modifications and improvements to the various embodiments disclosed herein are within the scope of the disclosed technology, and the specific scope of the disclosed technology is further defined by the appended claims.

[0143] In the above, it will be understood that any feature of one embodiment can be combined with any other feature of another embodiment, or replaced with any other feature of another embodiment.

[0144] Unless the context clearly indicates otherwise, words such as “comprise,” “comprising,” “include,” and “including” throughout the specification and claims should be interpreted in a comprehensive rather than exclusive sense, i.e., “include, but not limited to.” The term “combined” as commonly used herein refers to two or more elements that may be directly joined or joined by one or more intermediate elements. Similarly, the term “connected” as commonly used herein refers to two or more elements that may be directly joined or joined by one or more intermediate elements. Furthermore, the words “herein,” “above,” “below,” and words of similar meaning, when used in this application, refer to the entire application and not to any particular part thereof. Where the context allows, words in the above detailed description that are used singular or plural may each include plural or singular forms. The word "or" in relation to a list of two or more items encompasses all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.

[0145] Furthermore, conditional language used herein, in particular, such as “can,” “could,” “might,” “may,” “eg,” “for example,” and “such as,” is generally intended to convey that a particular embodiment includes certain features, elements, and / or states, but other embodiments do not, unless otherwise specifically stated or understood to have a different meaning in the context in which they are used. Therefore, such conditional language is generally not intended to imply that features, elements, and / or states are required in any way in one or more embodiments, or that these features, elements, and / or states are included in or performed in any particular embodiment.

[0146] While specific embodiments have been described, these embodiments are presented only as examples and are not intended to limit the scope of this disclosure. In fact, the novel apparatus, methods, and systems described herein may be embodied in various other forms, and various omissions, substitutions, and modifications may be made in the forms of the methods and systems described herein without departing from the spirit of this disclosure. For example, while a feature is presented in a given configuration, alternative embodiments may perform a similar function in different configurations and / or sensor connection configurations, and some features may be deleted, moved, added, subdivided, combined, and / or modified. Each of these features can be implemented in various different ways. Further embodiments can be provided by combining any suitable combination of elements and operations of the various embodiments described above. The various features and processes described above may be implemented independently of each other or combined in various ways. All possible combinations and partial combinations of the features of this disclosure are intended to be within the scope of this disclosure.

Claims

1. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It comprises a vertical cavity formed through the central region and a main inner surface configured to face the substrate, the main inner surface having a showerhead that radially surrounds the vertical cavity, An injector block assembly positioned above the showerhead to deliver the gas from outside the cycle deposition chamber through the vertical cavity into the cycle deposition chamber, A plurality of gas channels formed within the injector block assembly and configured to allow the gas to flow separately, at least partially, through the injector block assembly It is equipped with, A showerhead assembly in which the gas channels exiting the injector block assembly extend in different directions relative to each other and in different directions with respect to a vertical axis intersecting the substrate.

2. The shower head assembly according to claim 1, wherein the neck angle formed between the main surface and a horizontal plane parallel to the main surface of the substrate is 2 to 7 degrees.

3. The showerhead assembly according to claim 1, wherein the vertical cavity has a volume having the shape of a frustocone, and the gas enters the vertical cavity through a narrower upper part and exits into the cycle deposit chamber through the wider base of the frustocone.

4. The shower head assembly according to claim 1, wherein the injector block assembly further comprises a premixing chamber formed inside, the premixing chamber being configured to receive the gases separately through the gas channels and to premix the gases inside to form a gas mixture to be delivered to the vertical cavity.

5. The shower head assembly according to claim 1, wherein the main inner surface of the shower head is tapered such that the vertical distance from the substrate to the main inner surface decreases radially outward with respect to the center of the substrate.

6. The shower head assembly according to claim 1, wherein different gas channels of the plurality of gas channels are configured to carry different gases or gas mixtures from one another.

7. The shower head assembly according to claim 1, wherein the vertical cavity has a curved side wall having the shape of the inner surface of a frustum of a cone having a conical angle of 8 to 12 degrees with respect to the vertical axis of the cycle deposition chamber.

8. The shower head assembly according to claim 1, wherein the gas channel is configured to allow the gas to enter the vertical cavity from the upper opening of the vertical cavity toward the substrate at a certain vertical depth.

9. The shower head assembly according to claim 8, wherein the gas channels are configured such that the gases flowing through different gas channels flow separately to the vertical cavity without mixing before being delivered to the vertical cavity.

10. The shower head assembly according to claim 4, wherein the premixing chamber is formed as a recessed cavity within the injector block assembly.

11. The shower head assembly according to claim 10, wherein the gas channels are configured such that one or more of the gases flowing through different gas channels flow separately to the premixing chamber without being mixed before being delivered to the premixing chamber.

12. The shower head assembly according to claim 10, wherein the gas channel is configured to allow the gas to enter the premixing chamber at the upper opening of the premixing chamber.

13. The shower head assembly according to claim 10, wherein the gas channels exiting the injector block assembly into the premixing chamber extend in different directions.

14. A showerhead assembly configured to deliver multiple gases to a cycle deposition chamber, It comprises a vertical cavity formed through the central region and a main inner surface configured to face the substrate, the main inner surface having a showerhead that radially surrounds the vertical cavity, An injector block assembly positioned above the showerhead to deliver the gas from outside the cycle deposition chamber through the vertical cavity into the cycle deposition chamber, A plurality of gas channels formed within the injector block assembly and configured to separate one or more of the gases through the injector block assembly, A premixing chamber is formed within the injector block assembly and is configured to receive the gas separately through the gas channel and to premix the gas internally to form a gas mixture before the gas mixture is delivered to the vertical cavity. A shower head assembly equipped with the following features.

15. The shower head assembly according to claim 14, wherein the premixing chamber comprises a hollow cavity, and the hollow cavity has one or more outlet channels formed through the side walls of the hollow cavity.

16. The shower head assembly according to claim 15, wherein the hollow cavity is defined by a bottom wall and a side wall connecting the bottom surface of the injector block assembly to the bottom wall.

17. The shower head assembly according to claim 16, wherein the gas channels exiting the injector block assembly extend in different directions intersecting different portions of the bottom wall.

18. The shower head assembly according to claim 15, wherein the hollow cavity has a cylindrical shape with a length extending in the vertical direction.

19. The shower head assembly according to claim 15, wherein the premixing chamber comprises one or more outlet channels formed through the lower part of the side wall.

20. The shower head assembly according to claim 19, wherein the outlet channel extends outward from the hollow cavity.

21. The shower head assembly according to claim 19, wherein the outlet channel extends in a horizontal direction parallel to the main surface of the substrate.

22. The shower head assembly according to claim 19, wherein the outlet channel surrounds the hollow cavity of the premixing chamber.

23. The shower head assembly according to claim 19, wherein the outlet channel is formed at the same vertical height.

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