Semiconductor power module, semiconductor power package, and method for manufacturing a semiconductor power module
JP2026517457AActive Publication Date: 2026-05-29HITACHI ENERGY LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- HITACHI ENERGY LTD
- Filing Date
- 2024-05-22
- Publication Date
- 2026-05-29
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Figure 2026517457000001_ABST
Abstract
The semiconductor power module (1) comprises a semiconductor power device (2), a first metal component (11) coupled to a first side (5) of the semiconductor power device (2), and a second metal component (12) coupled to a second side (6) of the semiconductor power device (2) opposite to the first side (5). A control terminal (10) is electrically coupled to an electrical contact (7) of the semiconductor power device (2). The first metal component (11) and the second metal component (12) each include a given surface structure (13, 14) for guiding a cooling fluid along the semiconductor power device (2), and the hollow housing (4) restricts a predetermined internal flow of the cooling fluid. The housing (4) includes an inlet (43) and an outlet (44) for allowing the cooling fluid to enter and exit the housing (4). The housing (4) is coupled to both the first metal component (11) and the second metal component (12), surrounding the semiconductor power device (2). The housing (4), along with the first metal component (11) and the second metal component (12), forms an internal flow chamber around the semiconductor power device (2) that is filled with cooling fluid during the operation of the semiconductor power module (1).
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