Semiconductor power module, semiconductor power package, and method for manufacturing a semiconductor power module

JP2026517457AActive Publication Date: 2026-05-29HITACHI ENERGY LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
HITACHI ENERGY LTD
Filing Date
2024-05-22
Publication Date
2026-05-29

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Abstract

The semiconductor power module (1) comprises a semiconductor power device (2), a first metal component (11) coupled to a first side (5) of the semiconductor power device (2), and a second metal component (12) coupled to a second side (6) of the semiconductor power device (2) opposite to the first side (5). A control terminal (10) is electrically coupled to an electrical contact (7) of the semiconductor power device (2). The first metal component (11) and the second metal component (12) each include a given surface structure (13, 14) for guiding a cooling fluid along the semiconductor power device (2), and the hollow housing (4) restricts a predetermined internal flow of the cooling fluid. The housing (4) includes an inlet (43) and an outlet (44) for allowing the cooling fluid to enter and exit the housing (4). The housing (4) is coupled to both the first metal component (11) and the second metal component (12), surrounding the semiconductor power device (2). The housing (4), along with the first metal component (11) and the second metal component (12), forms an internal flow chamber around the semiconductor power device (2) that is filled with cooling fluid during the operation of the semiconductor power module (1).
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