Metal flash-enhanced atomic layer deposition and chemical vapor deposition
The flash-enhanced ALD/CVD method addresses the challenge of conformal low-temperature metal film deposition in semiconductors by using light pulses to induce surface nucleation, achieving precise and impurity-minimized metal film formation on semiconductor substrates.
JP2026517672APending Publication Date: 2026-06-02LAM RES CORP
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- LAM RES CORP
- Filing Date
- 2024-04-02
- Publication Date
- 2026-06-02
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Figure 2026517672000001_ABST
Abstract
A low-temperature metal-containing film deposition method includes the steps of introducing a reagent into a processing chamber containing a semiconductor substrate and applying a light pulse to the semiconductor substrate from a light source, thereby rapidly and transiently increasing the temperature of the top surface and / or nucleation layer of the semiconductor substrate. The substrate may be irradiated during metal precursor delivery, reducing agent delivery, or purging. Flash-enhanced deposition of molybdenum, tungsten, or ruthenium may optionally include the application of light to a dielectric material as a pretreatment and / or posttreatment.
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