Laser heat treatment method for substrate structures and method for manufacturing electronic elements using the same.

Abstract

This document discloses a laser heat treatment method for a substrate structure and a method for manufacturing an electronic element using the same. The disclosed laser heat treatment method for a substrate structure is a laser heat treatment method that involves irradiating one surface of a substrate structure that can be divided into a plurality of unit regions with a laser beam and performing heat treatment on the substrate structure, and may include the steps of performing an nth laser heat treatment on the substrate structure and an (n+1)th laser heat treatment on the substrate structure, wherein the nth laser heat treatment may be performed on a first region of the substrate structure that includes one or more of the unit regions, and the (n+1)th laser heat treatment may be performed on a second region of the substrate structure that includes one or more of the unit regions, the step of performing the nth laser heat treatment may include irradiating the first region with the laser beam in a scanning manner while changing the relative position between the substrate structure and the laser beam, the step of performing the (n+1)th laser heat treatment may include irradiating the second region with the laser beam in a scanning manner while changing the relative position between the substrate structure and the laser beam, and at least one of the nth laser heat treatment and the (n+1)th laser heat treatment may be performed without moving the substrate structure and by moving the irradiation position of the laser beam.

Description

Technical Field

[0001] The present invention relates to a heat treatment method for a workpiece and a method for manufacturing an element to which the same is applied, and more particularly, to a laser heat treatment method for a substrate structure and a method for manufacturing an electronic element to which the same is applied.

Background Art

[0002] Generally, semiconductor elements / electronic elements can be manufactured through a plurality of processes. For example, each process for manufacturing a semiconductor element / electronic element can include a thin film deposition process, a photolithography process, an etching process, an ion implantation process, a heat treatment (i.e., annealing) process, and the like. Among these, the heat treatment process can be a process for improving and ensuring the characteristics of the element by stabilizing, activating, or melting the substrate or the thin film formed on the substrate, or removing seam defects in the thin film. The heat treatment (annealing) process can include a laser heat treatment process, a rapid thermal process (RTP), and the like.

[0003] The laser heat treatment process has the advantages that since heat treatment can be mainly performed on the surface portion of the substrate and the region adjacent thereto using a laser, the influence on other processes is small, heat damage can be reduced, and temperature increase and control are relatively easy. However, as the integration degree of semiconductor elements / electronic elements increases, the size of a unit element is continuously reduced, and the processes become more sophisticated, the temperature non-uniformity generated in the substrate portion during laser heat treatment can induce various problems in the manufacturing characteristics of the element.

[0004] Furthermore, in existing laser heat treatment processes, in order to irradiate a specific shot area with a laser using a stepper method, it is necessary to secure uniform laser energy over a relatively wide area to match the size of the shot area. For this purpose, a complex optical system is required. Applying a complex optical system not only increases equipment costs but can also be disadvantageous in terms of equipment maintenance and management.

[0005] Therefore, there is a need for a laser heat treatment method and related technologies that can not only easily control temperature distribution and improve heat treatment characteristics, but also reduce equipment costs and maintenance burdens by simplifying the applied optical system. [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] The technical problem that this invention aims to solve is to provide a laser heat treatment method that allows for easy control of temperature dispersion during laser-based heat treatment and improves heat treatment characteristics.

[0007] Furthermore, the technical problem that this invention aims to solve is to provide a laser heat treatment method that can reduce equipment costs and maintenance and management burden by simplifying the optical system applied in laser heat treatment.

[0008] Furthermore, the technical problem that the present invention aims to solve is to provide a method for manufacturing electronic elements (semiconductor elements) to which the above-described laser heat treatment method is applied.

[0009] The problems that this invention aims to solve are not limited to those mentioned above, and other problems not mentioned can be understood by those skilled in the art from the following description. [Means for solving the problem]

[0010] According to one embodiment of the present invention, a laser heat treatment method is provided for a substrate structure that can be divided into a plurality of unit regions, wherein a laser beam is irradiated onto one surface of the substrate structure, and heat treatment is performed on the substrate structure, the laser heat treatment method comprising the steps of: performing an nth laser heat treatment on the substrate structure; and performing an (n+1)th laser heat treatment on the substrate structure, wherein the nth laser heat treatment is performed on a first region of the substrate structure that includes one or more of the unit regions, and the (n+1)th laser heat treatment is performed on a second region of the substrate structure that includes one or more of the unit regions, and the step of performing the nth laser heat treatment is A laser heat treatment method for a substrate structure is provided, which includes the step of irradiating the first region with the laser beam in a scanning manner while changing the relative position between the substrate structure and the laser beam, the step of performing the (n+1)th laser heat treatment includes the step of irradiating the second region with the laser beam in a scanning manner while changing the relative position between the substrate structure and the laser beam, and at least one of the nth laser heat treatment and the (n+1)th laser heat treatment is performed by moving the irradiation position of the laser beam without moving the substrate structure.

[0011] At least one of the nth laser heat treatment and the (n+1)th laser heat treatment can be performed using a vector scan method, in which the irradiation position of the laser beam is moved by controlling the optical system without moving the stage on which the substrate structure is placed.

[0012] The width of the first region and the second region in the scanning direction of the laser beam may be smaller than the width of the substrate structure in the scanning direction.

[0013] The first and second regions can be separated from each other.

[0014] The plurality of unit regions may be arranged in a plurality of rows in a first direction and in a plurality of columns in a second direction perpendicular to the first direction. Furthermore, the first region and the second region may be separated from each other in any one of the following directions: the first direction, the second direction, and a third direction between the first and second directions.

[0015] The distance between the first region and the second region may be approximately 90% or more of the width of the unit region in either the first or second direction.

[0016] The first and second regions can come into contact with each other.

[0017] The first region and the second region may have different sizes from each other.

[0018] The first and second regions may have the same size.

[0019] The laser heat treatment method may include a step of performing an n+m-th laser heat treatment on the substrate structure (where m is an integer greater than 2), the n+m-th laser heat treatment may be performed on a third region of the substrate structure. The third region may be located on one side of either the first region or the second region, or between the first region and the second region.

[0020] The laser heat treatment method described above may be performed on the entire effective area of ​​the one surface of the substrate structure.

[0021] The laser beam can have a width in the range of approximately 1 μm to 500 μm.

[0022] The laser beam may include any one of ultraviolet rays, visible rays, infrared rays, and microwaves.

[0023] The substrate structure can include a semiconductor film or an insulator film, and the heat treatment using the laser can be performed so as to change the crystallinity, physical properties, or film quality of the semiconductor film or the insulator film.

[0024] The substrate structure can include a wafer.

[0025] Before performing the heat treatment using the laser beam, the substrate structure can have an initial temperature of about 550°C or lower, and the heating temperature of the region of the substrate structure by irradiation of the laser beam can be in the range of about 200°C to 3000°C.

[0026] The laser heat treatment method for the substrate structure can include a step of moving a target region from the first region where the n-th laser heat treatment is performed to the second region where the (n + 1)-th laser heat treatment is performed, and the step of moving the target region can include a step of moving a stage on which the substrate structure is disposed.

[0027] According to another embodiment of the present invention, there is provided a method of manufacturing an electronic device, including: heat-treating a substrate structure using the above-described laser heat treatment method; and forming an electronic device from the heat-treated substrate structure.

Advantages of the Invention

[0028] According to each embodiment of the present invention, it is possible to embody a laser heat treatment method that can easily control temperature distribution and improve heat treatment characteristics during heat treatment using a laser. Further, according to each embodiment of the present invention, it is possible to embody a laser heat treatment method that can reduce equipment costs and maintenance and management burdens by simplifying an optical system applied in heat treatment using a laser.

[0029] When applying the laser heat treatment method according to each embodiment of the present invention, it is possible to manufacture an electronic device (semiconductor device) having excellent performance and uniformity.

[0030] However, the effects of the present invention are not limited to the effects described above, and can be extended in various ways without departing from the technical idea and scope of the present invention. [Brief explanation of the drawing]

[0031] [Figure 1] This is a plan view illustrating a laser heat treatment method for a substrate structure according to one embodiment of the present invention.

[0032] [Figure 2] This is a plan view illustrating an exemplary laser heat treatment method for a third region of the substrate structure shown in Figure 1, according to one embodiment of the present invention.

[0033] [Figure 3a-3c] This is a plan view illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0034] [Figure 4a-4c] This is a plan view illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0035] [Figures 5a-5c] This is a plan view illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0036] [Figures 6a-6c] This is a plan view illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0037] [Figures 7a-7c] This is a plan view illustrating the laser heat treatment method for a substrate structure relating to the first comparative example.

[0038] [Figure 8] This is a plan view illustrating the laser heat treatment method for a substrate structure relating to the second comparative example.

[0039] [Figure 9] This is a perspective view illustrating a method for manufacturing an electronic element by applying a laser heat treatment method to a substrate structure according to an embodiment of the present invention. [Modes for carrying out the invention]

[0040] Hereinafter, each embodiment of the present invention will be described in detail with reference to the attached drawings.

[0041] The embodiments of the present invention described below are provided to further clarify the invention to those who are ordinaryly skilled in the art, and the scope of the invention is not limited by the embodiments below, and the embodiments below can be modified in various other forms.

[0042] The terms used herein are for the purpose of describing specific embodiments and are not intended to limit the invention. A singular term used herein may include multiple forms unless the context clearly indicates otherwise. Furthermore, the term “including” as used herein identifies the presence of the shapes, stages, figures, actions, members, elements, and / or groups thereof mentioned, and does not exclude the presence or addition of one or more other shapes, stages, figures, actions, members, elements, and / or groups thereof. Furthermore, the term “connected” as used herein is a concept that includes not only direct connection of each member, but also indirect connection through further interposition of other members between them.

[0043] Furthermore, when one component is described as being "on top of" another component in this specification, this includes not only cases where one component is in contact with another component, but also cases where there are other components between the two components. The terms "and / or" as used herein include any one or more of the listed items and all combinations thereof. In addition, terms of degree such as "about" and "substantially" as used herein are used to mean a range of numerical values ​​or degrees or close to them, taking into account inherent manufacturing and material tolerances, and are used to prevent infringers from unfairly exploiting disclosures that refer to precise or absolute numerical values ​​provided to facilitate understanding of this application.

[0044] The embodiments of the present invention will be described in detail below with reference to the attached drawings. The sizes and thicknesses of the regions and parts shown in the attached drawings may be exaggerated to some extent for clarity and ease of explanation. The same reference numerals throughout the detailed description refer to the same components.

[0045] Figure 1 is a plan view illustrating a laser heat treatment method for a substrate structure according to one embodiment of the present invention.

[0046] Referring to Figure 1, the laser heat treatment method for a substrate structure according to an embodiment of the present invention may be a laser heat treatment method (i.e., a laser annealing method) in which a laser beam is irradiated onto one surface of a substrate structure S10 that can be divided into a plurality of unit regions, and heat treatment (i.e., annealing) is performed on the substrate structure S10. The substrate structure S10 may include a semiconductor substrate or an insulating substrate, and may also include a conductive substrate depending on the circumstances. Furthermore, the substrate structure S10 may further include a predetermined thin film formed on the substrate (base substrate), or an element portion including a thin film. The semiconductor substrate may include, as an unrestricted example, at least one of various semiconductor materials composed of Si, Ge, SiGe, SiC, GaN, GaAs, etc. The thin film may include at least one of a semiconductor thin film, an insulating thin film, and a conductive thin film. The semiconductor thin film may include various semiconductor materials including amorphous silicon and polycrystalline silicon. The insulating thin film may include silicon oxide, silicon nitride, silicon nitrogen oxide, and a high-dielectric (high-k) material having a higher dielectric constant than silicon nitride. The conductive thin film may include, for example, at least one of a metal and a metal compound. The element portion may include, as non-limiting examples, switching elements such as transistors and diodes, and memory elements such as storage nodes, capacitors, and resistive layers. Furthermore, the substrate structure S10 may include a wafer or have the form of a wafer.

[0047] If the substrate structure S10 includes a semiconductor film (semiconductor thin film) or an insulating film (insulating thin film), the laser-based heat treatment may be performed to change the crystallinity, physical properties, or film quality of the semiconductor film or insulating film. As a non-limiting example, the laser-based heat treatment may be performed for crystallization of amorphous silicon, to remove defects such as seams in a thin film, to activate doping regions, or to stabilize the substrate or thin film. In addition, the laser-based heat treatment may be performed for a variety of other purposes.

[0048] Multiple regions on one surface of the substrate structure S10, demarcated by the dotted grid lines shown in Figure 1, can correspond to the multiple unit regions. In Figure 1, one grid region (square region) formed by each dotted line can correspond to the unit region. The unit region can correspond to a shot region where the laser is irradiated simultaneously in an existing stepper-type laser heat treatment. However, in the embodiments of the present invention, the laser may not be irradiated to the unit region in a shot manner. The unit region can have, for example, a square shape or a substantially square shape. By irradiating the multiple unit regions on one surface of the substrate structure S10 with a laser beam using the scanning method according to the embodiments of the present invention, heat treatment (i.e., annealing) can be performed on the entire effective area of ​​the one surface.

[0049] The laser heat treatment method may include the steps of performing an nth laser heat treatment on the substrate structure S10 and an (n+1)th laser heat treatment on the substrate structure S10. The nth laser heat treatment may be performed on a first region 10 of the substrate structure S10 that includes one or more of the unit regions, and the (n+1)th laser heat treatment may be performed on a second region 20 of the substrate structure S10 that includes one or more of the unit regions. Here, n means an integer of 1 or more. Each of the first region 10 and the second region 20 may have a shape similar to a square, rectangle, or quadrilateral. If at least a part of the object to be laser heat treated has a round shape, at least a part of the first region 10 and the second region 20 may have a round shape to match the shape of the object. The laser heat treatment according to the embodiment can be performed on non-linear (nonlinear) regions of the edge portion of the substrate structure S10.

[0050] According to one embodiment, the first region 10 and the second region 20 can be separated from each other. The above-mentioned plurality of unit regions can be arranged in a plurality of rows in a first direction (e.g., the X-axis direction on the drawing) and in a plurality of columns in a second direction perpendicular to the first direction (e.g., the Y-axis direction on the drawing). In this case, the first region 10 and the second region 20 can be separated from each other in any one of the first direction (X-axis direction), the second direction (Y-axis direction), and a third direction between the first and second directions. The distance d1 between the first region 10 and the second region 20 can be a distance corresponding to about 90% or more of the width of the unit region in either the first direction (X-axis direction) or the second direction (Y-axis direction). The spacing d1 between the first region 10 and the second region 20 may be about 90% or more of the width of the unit region in either the first direction (X-axis direction) or the second direction (Y-axis direction), and may be about 2000% or less as an unrestrictive example, but may be about 2000% or more depending on the circumstances. Here, the "spacing" may mean the minimum spacing (minimum distance). This may also be the case in other parts of this specification. In a laser heat treatment method according to one embodiment of the present invention, the nth laser heat treatment and the (n+1)th laser heat treatment can be performed with a spatial (regional) spacing between them.

[0051] In the embodiment shown in Figure 1, the first region 10 and the second region 20 are separated from each other in the first direction (X-axis direction), and the distance d1 between the first region 10 and the second region 20 is approximately 90% or more of the width of the unit region in the first direction (X-axis direction). The unit region can have a width of several millimeters to several tens of millimeters in the first direction (X-axis direction) and a width of several millimeters to several tens of millimeters in the second direction (Y-axis direction).

[0052] When the first region 10 and the second region 20 are separated from each other in either the first direction (X-axis direction) or the second direction (Y-axis direction), the distance d1 between the first region 10 and the second region 20 can be a distance equivalent to N times the width of the unit region in either the first direction (X-axis direction) or the second direction (Y-axis direction), where N can be an integer of 1 or more. Figure 1 shows the case where the first region 10 and the second region 20 are separated from each other in the first direction (X-axis direction), and the distance d1 between the first region 10 and the second region 20 is a distance equivalent to 1 times the width of the unit region in the first direction (X-axis direction). However, the distance can also be 2 times (2 squares distance) or more, rather than 1 time (1 square distance).

[0053] Thus, when the nth laser heat treatment and the (n+1)th laser heat treatment are performed with a spatial (regional) gap between them, the effect of suppressing temperature non-uniformity of the substrate structure S10 at each laser heat treatment stage can be improved.

[0054] In embodiments of the present invention, the step of performing the nth laser heat treatment may include irradiating the first region 10 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. The step of performing the (n+1)th laser heat treatment may include irradiating the second region 20 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. At least one of the nth laser heat treatment and the (n+1)th laser heat treatment can be performed by moving the irradiation position of the laser beam without moving the substrate structure S10. At least one of the nth laser heat treatment and the (n+1)th laser heat treatment can be performed in a vector scan manner by controlling the optical system without moving the stage on which the substrate structure S10 is placed. Each of the nth laser heat treatment and the (n+1)th laser heat treatment can be performed in the vector scan manner. This will be explained in more detail later with reference to Figure 2. In addition, when moving the target area from the first area 10 where the nth laser heat treatment is performed to the second area 20 where the (n+1)th laser heat treatment is performed, the substrate structure S10 can be moved. That is, when moving the target area from the first area 10 where the nth laser heat treatment is performed to the second area 20 where the (n+1)th laser heat treatment is performed, the stage on which the substrate structure S10 is placed can be moved. Therefore, the laser heat treatment method for a substrate structure according to an embodiment of the present invention may include a step of moving the target area from the first area 10 where the nth laser heat treatment is performed to the second area 20 where the (n+1)th laser heat treatment is performed, and the step of moving the target area may include a step of moving the stage on which the substrate structure S10 is placed. This can be applied identically throughout this specification.

[0055] In one embodiment, the width of the first region 10 and the second region 20 in the scanning direction of the laser beam may be smaller than the width of the substrate structure S10 in the scanning direction. As a non-limiting example, the scanning direction of the laser beam may be parallel to the X-axis direction. In this case, the width of the first region 10 and the second region 20 in the X-axis direction may be smaller than the width of the substrate structure S10 in the X-axis direction. As a non-limiting example, the width of the first region 10 and the second region 20 in the X-axis direction may be less than about 2 / 3, less than about 1 / 2, or less than about 1 / 3 of the width of the substrate structure S10 in the X-axis direction.

[0056] In one embodiment, the first region 10 and the second region 20 can have different sizes. In this case, the width of the first region 10 in the X-axis direction may differ from the width of the second region 20 in the X-axis direction, and / or the width of the first region 10 in the Y-axis direction may differ from the width of the second region 20 in the Y-axis direction. Laser annealing can be easily performed on multiple regions 10, 20 having different sizes. However, depending on the circumstances, the first region 10 and the second region 20 can also have the same size.

[0057] Furthermore, the laser heat treatment method may further include the step of performing an (n+2)th laser heat treatment on the substrate structure S10. The (n+2)th laser heat treatment may be performed on a third region 30 of the substrate structure S10 that includes one or more of the unit regions. The third region 30 may be located on one side of either the first region 10 or the second region 20. In this embodiment, the case where the third region 30 is located on one side of the second region 20 is shown. Also, the third region 30 may be separated from at least one of the first region 10 or the second region 20. In this embodiment, the third region 30 may be located on one side of the second region 20, separated from it, in which case the distance between the third region 30 and the second region 20 may be a distance corresponding to about 90% or more of the width of the unit region in either the first direction (X-axis direction) or the second direction (Y-axis direction).

[0058] Figure 1 shows the case where the third region 30 and the second region 20 are separated from each other in the second direction (Y-axis direction), and the distance between the third region 30 and the second region 20 is approximately 90% or more of the width of the unit region in the second direction (Y-axis direction). When the third region 30 and the second region 20 are separated from each other in either the first direction (X-axis direction) or the second direction (Y-axis direction), the distance between the third region 30 and the second region 20 can be a distance equivalent to N times the width of the unit region in either the first direction (X-axis direction) or the second direction (Y-axis direction), where N can be an integer of 1 or more.

[0059] In embodiments of the present invention, the step of performing the (n+2)th laser heat treatment may include a step of irradiating the third region 30 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. The (n+2)th laser heat treatment can be performed by moving the irradiation position of the laser beam without moving the substrate structure S10. The (n+2)th laser heat treatment can be performed in a vector scan manner by moving the irradiation position of the laser beam by controlling the optical system without moving the stage on which the substrate structure S10 is placed. According to one embodiment, the width of the third region 30 in the scanning direction of the laser beam may be smaller than the width of the substrate structure S10 in the scanning direction. As a non-limiting example, the scanning direction of the laser beam may be parallel to the X-axis direction. In this case, the width of the third region 30 in the X-axis direction may be smaller than the width of the substrate structure S10 in the X-axis direction. As a non-restrictive example, the width of the third region 30 in the X-axis direction may be less than approximately 2 / 3, less than approximately 1 / 2, or less than approximately 1 / 3 of the width of the substrate structure S10 in the X-axis direction.

[0060] According to one embodiment, the third region 30 may have a different size from at least one of the first region 10 and the second region 20. However, depending on the circumstances, the third region 30 may also have the same size as at least one of the first region 10 and the second region 20.

[0061] In addition, the laser heat treatment method may further include the steps of performing an (n+3) laser heat treatment on the substrate structure S10, an (n+4) laser heat treatment, and an (n+5) laser heat treatment. The (n+3) laser heat treatment may be performed on a fourth region 40 of the substrate structure S10 that includes one or more of the unit regions, the (n+4) laser heat treatment may be performed on a fifth region 50 of the substrate structure S10 that includes one or more of the unit regions, and the (n+5) laser heat treatment may be performed on a sixth region 60 of the substrate structure S10 that includes one or more of the unit regions. In Figure 1, the positions, sizes, and arrangement relationships of the first to sixth regions 10 to 60 are merely illustrative and can be varied in many ways.

[0062] Figure 2 is a plan view illustrating an exemplary laser heat treatment method for the third region 30 of the substrate structure S10 shown in Figure 1, according to one embodiment of the present invention.

[0063] Referring to Figure 2, the (n+2)th laser heat treatment step may include a step of irradiating the third region 30 with the laser beam in a scanning manner while changing the relative position between the substrate structure (S10 in Figure 1) and the laser beam. The (n+2)th laser heat treatment can be performed by moving the irradiation position of the laser beam without moving the substrate structure (S10 in Figure 1). The (n+2)th laser heat treatment can be performed in a vector scan manner by moving the irradiation position of the laser beam by controlling (driving) the optical system without moving the stage on which the substrate structure (S10 in Figure 1) is placed. In the vector scan manner, a certain region [i.e., the third region 30] can be scanned with the laser beam by controlling the optical system without moving the stage. In this case, the scanning direction of the laser beam may be unidirectional. The blue arrow indicates the scanning direction of the laser beam. The scanning direction of the laser beam may be, for example, parallel to the X-axis direction. The irradiation position of the laser beam can be moved, for example, in a direction parallel to the Y-axis.

[0064] According to one embodiment, heat treatment can be performed by scanning a certain area using a vector scan method while moving the irradiation position of the laser beam through the control (driving) of the optical system included in the laser heat treatment apparatus, without moving the stage. Here, the control method of the optical system can follow, for example, a general method in the art.

[0065] The laser heat treatment method described in Figure 2 can also be applied to the first and second regions 10 and 20 in Figure 1, respectively. Furthermore, the laser heat treatment method described in Figure 2 can also be applied to the fourth to sixth regions 40, 50, and 60 in Figure 1, respectively.

[0066] The laser beam used in the embodiments of the present invention described above may have a width (beam width) in the range of approximately 1 μm to 500 μm. The laser beam may be any one of ultraviolet light (e.g., EUV, DUV, UV), visible light, infrared light (IR), and microwaves. The wavelength of the laser beam may be, for example, approximately 0.01 μm to 11 μm. However, the specific type and wavelength range of the laser beam described above are illustrative and can be changed depending on the circumstances. Furthermore, before the heat treatment using the laser beam in the embodiments of the present invention, the substrate structure S10 may have an initial temperature of, for example, approximately 550°C or less, and the heating temperature of the area of ​​the substrate structure S10 (the area irradiated with the laser) due to irradiation with the laser beam may be in the range of approximately 200°C to 3000°C. However, each of the above temperature conditions is illustrative and can be changed depending on the circumstances.

[0067] According to each embodiment of the present invention, a laser heat treatment method can be realized that allows for easy control of temperature dispersion during laser-based heat treatment and improves heat treatment characteristics. Furthermore, according to each embodiment of the present invention, a laser heat treatment method can be realized that reduces equipment costs and maintenance and management burdens by simplifying the optical system applied in laser-based heat treatment.

[0068] As the integration density of semiconductor / electronic elements increases, the size of individual elements continues to shrink, and processes become more sophisticated, temperature inhomogeneities that occur in the substrate during laser heat treatment can induce various problems in the manufacturing characteristics of the elements. Furthermore, in existing laser heat treatment processes, in order to irradiate a specific shot area with a laser using a stepper method, it is necessary to secure uniform laser energy over a relatively wide area to match the size of the shot area, which requires the application of a complex optical system. Applying a complex optical system not only increases equipment costs but can also be disadvantageous in terms of equipment maintenance and management.

[0069] However, according to the embodiment of the present invention, a selected area can be heat-treated by scanning using a laser beam having a small width (beam width) of about 1 μm to 500 μm. Since the laser beam has excellent uniformity, the method according to the embodiment of the present invention allows for easy and effective control of the temperature distribution generated in the substrate. Furthermore, since the embodiment of the present invention uses a laser beam scanning method, the optical system can be simplified compared to the existing stepper method, which in turn can reduce equipment costs and be advantageous in terms of equipment maintenance and management.

[0070] Figures 3a to 3c are plan views illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0071] Referring to Figure 3a, the laser heat treatment method according to this embodiment may include a step of performing an nth laser heat treatment on the substrate structure S10. The nth laser heat treatment may be performed on a first region 11 of the substrate structure S10 that includes one or more of the unit regions. The step of performing the nth laser heat treatment may include a step of irradiating the first region 11 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. The nth laser heat treatment may be performed in a vector scan manner, in which the irradiation position of the laser beam is moved by controlling the optical system without moving the stage on which the substrate structure S10 is placed.

[0072] Referring to Figure 3b, the laser heat treatment method may include a step of performing an (n+1)th laser heat treatment on the substrate structure S10. The (n+1)th laser heat treatment may be performed on a second region 21 of the substrate structure S10 that includes one or more of the unit regions. The step of performing the (n+1)th laser heat treatment may include a step of irradiating the second region 21 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. The (n+1)th laser heat treatment can be performed in a vector scan manner, where the irradiation position of the laser beam is moved by controlling the optical system without moving the stage on which the substrate structure S10 is placed.

[0073] In one embodiment, the first region 11 and the second region 21 can be separated from each other. That is, the nth laser heat treatment and the (n+1)th laser heat treatment can be performed with a spatial (regional) gap between them. When the nth laser heat treatment and the (n+1)th laser heat treatment are performed with a spatial (regional) gap between them in this way, the effect of suppressing temperature non-uniformity of the substrate structure S10 at each laser heat treatment stage can be improved.

[0074] Referring to Figure 3c, the laser heat treatment method may include a step of performing an n+m-th laser heat treatment on the substrate structure S10, where m is an integer greater than 2. The n+m-th laser heat treatment may be performed on a third region 31 of the substrate structure S10 that includes one or more of the unit regions. The step of performing the n+m-th laser heat treatment may include a step of irradiating the third region 31 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. The n+m-th laser heat treatment may be performed in a vector scan manner, where the irradiation position of the laser beam is moved by controlling the optical system without moving the stage on which the substrate structure S10 is placed.

[0075] The third region 31 may be located between the first region 11 and the second region 21. After laser heat treatment is performed on the two regions 11 and 21, which are spaced apart from each other, and a predetermined time has elapsed, laser heat treatment can be performed on the third region 31 located between the first region 11 and the second region 21. The third region 31 may be positioned in contact with at least one of the first region 11 and the second region 21. Since laser heat treatment is performed on the third region 31 after a given time has elapsed following the laser heat treatment of the first region 11 and the second region 21, the temperature change of the substrate structure S10 that occurs during the laser heat treatment of the first region 11 and the second region 21 may not affect the laser heat treatment of the third region 31.

[0076] In the embodiments described with reference to Figures 3a to 3c, the case where the first region 11 where the nth laser heat treatment is performed and the second region 21 where the (n+1)th laser heat treatment is performed are separated from each other was described. However, depending on the circumstances, the first region 11 where the nth laser heat treatment is performed and the second region 21 where the (n+1)th laser heat treatment is performed can be in contact with each other. Here, "contact with each other" can include not only joining across a one-dimensional or two-dimensional joint, but also cases where certain parts overlap. The case where the first region 11 and the second region 21 are in contact with each other will be described in detail below with reference to Figures 4a to 4c.

[0077] Figures 4a to 4c are plan views illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0078] Referring to Figure 4a, the laser heat treatment method according to this embodiment may include a step of performing an nth laser heat treatment on the substrate structure S10. The nth laser heat treatment may be performed on a first region 12 of the substrate structure S10 that includes one or more of the unit regions. The step of performing the nth laser heat treatment may include a step of irradiating the first region 12 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. The (n+1)th laser heat treatment may be performed in a vector scan manner, in which the irradiation position of the laser beam is moved by controlling the optical system without moving the stage on which the substrate structure S10 is placed.

[0079] Referring to Figure 4b, the laser heat treatment method may include a step of performing an (n+1)th laser heat treatment on the substrate structure S10. The (n+1)th laser heat treatment may be performed on a second region 22 of the substrate structure S10 that includes one or more of the unit regions. The step of performing the (n+1)th laser heat treatment may include a step of irradiating the second region 22 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. The (n+1)th laser heat treatment can be performed in a vector scan manner, where the irradiation position of the laser beam is moved by controlling the optical system without moving the stage on which the substrate structure S10 is placed.

[0080] According to this embodiment, the first region 12 and the second region 22 can be in contact with each other. Even if the first region 12 and the second region 22 are in contact with each other, if the laser beam is irradiated in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam to perform laser heat treatment on the first region 12, and then the laser beam is irradiated in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam again to perform laser heat treatment on the second region 22, the effect of suppressing temperature non-uniformity of the substrate structure S10 can be obtained.

[0081] Referring to Figure 4c, the laser heat treatment method may include a step of performing an n+m-th laser heat treatment on the substrate structure S10, where m may be an integer greater than 2. The n+m-th laser heat treatment may be performed on a third region 32 of the substrate structure S10 that includes one or more of the unit regions. The step of performing the n+m-th laser heat treatment may include a step of irradiating the third region 32 with the laser beam in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam. The n+m-th laser heat treatment may be performed in a vector scan manner, where the irradiation position of the laser beam is moved by controlling the optical system without moving the stage on which the substrate structure S10 is placed.

[0082] The third region 32 may be positioned so as to be in contact with at least one of the first region 12 and the second region 22. For example, the third region 32 may be in contact with the second region 22. In this case, the second region 22 may be located between the first region 12 and the third region 32. Even if the second region 22 and the third region 32 are in mutual contact, if the laser beam is irradiated in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam to perform laser heat treatment on the second region 22, and then the laser beam is irradiated in a scanning manner while changing the relative position between the substrate structure S10 and the laser beam again to perform laser heat treatment on the third region 32, the effect of suppressing temperature non-uniformity of the substrate structure S10 can be obtained.

[0083] In the embodiments shown in Figures 3a to 3c, the first to third regions 11, 21, and 31 are exemplified as being arranged in a direction parallel to the X-axis. However, in other embodiments, the first to third regions 11, 21, and 31 can be arranged in a direction parallel to the Y-axis. Examples of this are shown in Figures 5a to 5c.

[0084] Figures 5a to 5c are plan views illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0085] Referring to Figures 5a to 5c, in the laser heat treatment method according to this embodiment, the first region 13 where the nth laser heat treatment is performed, the second region 23 where the (n+1)th laser heat treatment is performed, and the third region 33 where the (n+m)th laser heat treatment is performed can be arranged in a direction parallel to the Y axis. The third region 33 can be located between the first region 13 and the second region 23.

[0086] Furthermore, while the embodiments in Figures 4a to 4c exemplify the case where the first to third regions 12, 22, and 32 are arranged in a direction parallel to the X-axis, according to other embodiments, the first to third regions 12, 22, and 32 can be arranged in a direction parallel to the Y-axis. Examples of this are shown in Figures 6a to 6c.

[0087] Figures 6a to 6c are plan views illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0088] Referring to Figures 6a to 6c, in the laser heat treatment method according to this embodiment, the first region 14 where the nth laser heat treatment is performed, the second region 24 where the (n+1)th laser heat treatment is performed, and the third region 34 where the (n+m)th laser heat treatment is performed can be arranged in a direction parallel to the Y axis. The second region 24 can be located between the first region 14 and the third region 34.

[0089] In addition, in each embodiment described with reference to Figures 3a to 6c, the first to third regions may be arranged in any third direction between the first direction (X-axis direction) and the second direction (Y-axis direction).

[0090] Figures 7a to 7c are plan views illustrating the laser heat treatment method for a substrate structure according to the first comparative example.

[0091] Referring to Figures 7a to 7c, in the laser heat treatment method according to the first comparative example, after performing the first laser heat treatment (i.e., laser shot) on one region (the first unit region) of the substrate structure S1, the process can move to the second unit region adjacent to the first unit region and perform laser heat treatment (i.e., laser shot) on the second unit region. By moving to the next region (unit region) adjacent to the immediately preceding laser heat treatment region, the entire area of ​​the substrate structure S1 can be treated with laser heat treatment in a shot manner. In the drawing, the laser heat treatment can be performed starting from the lower left edge of the substrate structure S1, while repeatedly moving and aligning. In this way, when the nth laser heat treatment region and the (n+1)th laser heat treatment region are adjacent to each other, the substrate temperature conditions of each adjacent region change during the heat treatment of the nth laser heat treatment region, so the nth laser heat treatment region and the (n+1)th laser heat treatment region may not be heat treated under the same temperature conditions. In connection with this, the peak temperature in the nth laser heat treatment region and the peak temperature in the (n+1)th laser heat treatment region may differ from each other. Furthermore, temperature deviations may occur even within the (n+1)th laser heat treatment region. Such temperature non-uniformity can ultimately lead to non-uniformity and degradation of the device's characteristics.

[0092] Figure 8 is a plan view illustrating the laser heat treatment method for a substrate structure according to the second comparative example.

[0093] Referring to Figure 8, in the laser heat treatment method according to the second comparative example, after performing the first laser scan on one line region (the first line region) of the substrate structure S1, the laser can move to the second line region adjacent to the first line region and perform a laser scan on the second line region. By moving to the next region adjacent to the immediately preceding laser-scanned region, the entire area of ​​the substrate structure S1 can be subjected to laser heat treatment using the scanning method. In the drawing, the laser scan can be performed starting from the upper region of the substrate structure S1, while repeatedly moving and aligning. The red arrows indicate the scanning direction of the laser-treated area, and the numbers written to the left of the arrows indicate the order of the laser scans.

[0094] As in the second comparative example above, when laser annealing is performed on the entire substrate structure S1 in a single continuous process, there is a high possibility that the lower side of the substrate structure S1 will unintentionally overheat, or that unintentional temperature unevenness will occur on the upper side of the substrate structure S1 (i.e., the upper surface irradiated by the laser beam). In particular, if the lower side of the substrate structure S1 overheats, elements such as transistors and diodes that are pre-formed on the lower side may be damaged by heat or their performance may deteriorate. As a result, the characteristics of the elements ultimately manufactured from the substrate structure S1 may decrease, and problems such as an increase in the defect rate may occur.

[0095] A method for manufacturing an electronic element (semiconductor element) according to an embodiment of the present invention may include the steps of heat-treating a substrate structure using the laser heat treatment method according to each embodiment described above, and forming an electronic element (semiconductor element) from the heat-treated substrate structure. The step of forming the electronic element (semiconductor element) from the heat-treated substrate structure may include, for example, a step of performing a finishing process on the substrate structure, a step of forming a plurality of element parts by dicing the substrate structure, and a step of packaging the plurality of element parts. The finishing process, dicing process, packaging process, etc. are well known, so a detailed explanation thereof will be omitted.

[0096] Figure 9 is a perspective view illustrating a method for manufacturing an electronic element by applying a laser heat treatment method to a substrate structure according to an embodiment of the present invention.

[0097] Referring to Figure 9, multiple elements D10 can be formed from a heat-treated substrate structure S100. These multiple elements D10 may be electronic elements (semiconductor elements). The elements D10 may be memory elements or non-memory elements.

[0098] According to the embodiments of the present invention described above, a laser heat treatment method can be realized that allows for easy control of temperature dispersion during laser-based heat treatment and improves heat treatment characteristics. Furthermore, according to the embodiments of the present invention, a laser heat treatment method can be realized that reduces equipment costs and maintenance and management burdens by simplifying the optical system applied in laser-based heat treatment. By applying the laser heat treatment method according to the embodiments of the present invention, electronic elements (semiconductor elements) with excellent performance and uniformity can be manufactured.

[0099] This specification discloses preferred embodiments of the present invention, and specific terms are used, but these are merely general terms used to facilitate the explanation of the invention and to promote understanding of the invention, and are not intended to limit the scope of the invention. It will be obvious to a person ordinary skill in the art to which the present invention pertains that other modifications based on the technical idea of ​​the present invention are possible, in addition to the embodiments disclosed herein. A person ordinary skill in the art will see that the laser heat treatment method for a substrate structure and the method for manufacturing an electronic element to which the same is applied according to the embodiments described with reference to Figures 1 to 6c and Figure 9 can be substituted, modified, and transformed in various ways without departing from the technical idea of ​​the present invention. Therefore, the scope of the invention should not be defined by the embodiments described herein, but by the technical idea described in the claims. [Industrial applicability]

[0100] Each embodiment of the present invention can be applied to a heat treatment method for an object to be treated and a method for manufacturing an element to which the same is applied. Each embodiment of the present invention can be applied to a laser heat treatment method for a substrate structure and a method for manufacturing an electronic element to which the same is applied.

Claims

1. A laser heat treatment method comprising irradiating one surface of a substrate structure that can be divided into multiple unit regions with a laser beam and performing heat treatment on the substrate structure, The laser heat treatment method includes the steps of: performing an nth laser heat treatment on the substrate structure; and performing an (n+1)th laser heat treatment on the substrate structure; The nth laser heat treatment is performed on a first region of the substrate structure that includes one or more of the unit regions, and the (n+1)th laser heat treatment is performed on a second region of the substrate structure that includes one or more of the unit regions. The nth step of performing the laser heat treatment includes a step of irradiating the first region with the laser beam in a scanning manner while changing the relative position between the substrate structure and the laser beam. The (n+1)th step of performing the laser heat treatment includes a step of irradiating the second region with the laser beam in a scanning manner while changing the relative position between the substrate structure and the laser beam, A laser heat treatment method for a substrate structure, wherein at least one of the nth laser heat treatment and the (n+1)th laser heat treatment is performed by moving the irradiation position of the laser beam without moving the substrate structure.

2. The laser heat treatment method for a substrate structure according to claim 1, wherein at least one of the nth laser heat treatment and the (n+1)th laser heat treatment is performed in a vector scan manner, in which the irradiation position of the laser beam is moved by controlling the optical system without moving the stage on which the substrate structure is placed.

3. The laser heat treatment method for a substrate structure according to claim 1, wherein the width of the first region and the second region in the scanning direction of the laser beam is smaller than the width of the substrate structure in the scanning direction.

4. The laser heat treatment method for a substrate structure according to claim 1, wherein the first region and the second region are separated from each other.

5. The aforementioned plurality of unit regions are arranged in a plurality of rows in a first direction and in a plurality of columns in a second direction perpendicular to the first direction. The laser heat treatment method for a substrate structure according to claim 4, wherein the first region and the second region are separated from each other in any one of the first direction, the second direction, and the third direction between the first direction and the second direction.

6. The laser heat treatment method for a substrate structure according to claim 5, wherein the distance between the first region and the second region is 90% or more of the width of the unit region in either the first direction or the second direction.

7. The laser heat treatment method for a substrate structure according to claim 1, wherein the first region and the second region are in mutual contact.

8. The laser heat treatment method for a substrate structure according to claim 1, wherein the first region and the second region have different sizes from each other.

9. The laser heat treatment method for a substrate structure according to claim 1, wherein the first region and the second region have the same size.

10. The laser heat treatment method includes the step of performing an n+m-th laser heat treatment on the substrate structure (where m is an integer greater than 2), The n+m-th laser heat treatment is performed on the third region of the substrate structure. The laser heat treatment method for a substrate structure according to claim 1, wherein the third region is located on one side of either the first region or the second region, or is located between the first region and the second region.

11. The laser heat treatment method for a substrate structure according to claim 1, wherein the laser heat treatment method is performed on the entire effective area of ​​one surface of the substrate structure.

12. The laser heat treatment method for a substrate structure according to claim 1, wherein the laser beam has a width in the range of 1 μm to 500 μm.

13. The laser heat treatment method for a substrate structure according to claim 1, wherein the laser beam includes one of ultraviolet light, visible light, infrared light, and microwaves.

14. The laser heat treatment method for a substrate structure according to claim 1, wherein the substrate structure includes a semiconductor film or an insulating film, and the heat treatment using the laser is performed in such a way as to change the crystallinity, physical properties, or film quality of the semiconductor film or insulating film.

15. The method for laser heat treatment of a substrate structure according to claim 1, wherein the substrate structure includes a wafer.

16. Before performing the heat treatment using the laser beam, the substrate structure has an initial temperature of 550°C or lower. The laser heat treatment method for a substrate structure according to claim 1, wherein the heating temperature of the region of the substrate structure by irradiation with the laser beam is in the range of 200°C to 3000°C.

17. A laser heat treatment method for a substrate structure according to claim 1, comprising the step of moving the target region from the first region where the nth laser heat treatment is performed to the second region where the (n+1)th laser heat treatment is performed, wherein the step of moving the target region includes the step of moving the stage on which the substrate structure is placed.

18. A step of heat-treating a substrate structure using the laser heat treatment method described in any one of claims 1 to 17; and A method for manufacturing an electronic element, comprising the step of forming an electronic element from the heat-treated substrate structure.

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