Semiconductor power module, semiconductor power package, and method for manufacturing a semiconductor power module

Abstract

The semiconductor power module (1) comprises at least one semiconductor power device (2) having electrical contacts, a first metal contact (11), and a second metal contact (12). The first metal contact (11) is directly coupled to a first side (5) of the semiconductor power device (2). The second metal contact (12) is directly coupled to a second side (6) of the semiconductor power device (2) opposite to the first side (5) with respect to the stacking direction (R) of the semiconductor power module (1). A control terminal (14) is electrically coupled to an electrical contact (7) of the semiconductor power device (2). The semiconductor power module (1) further comprises a sealing portion (4) which surrounds the semiconductor power device (2) and the first and second metal contacts (11,12) such that the semiconductor power device (2) and the first and second metal contacts (11,12) are embedded in the sealing portion (4). The control terminal (14) and the surfaces (15, 16) of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R) are exposed from the sealing portion (14).

Description

Technical Field

[0001] The present disclosure relates to a semiconductor power module and a method for manufacturing a semiconductor power module. The present disclosure further relates to a corresponding semiconductor power package.

Background Art

[0002] Power modules are used, for example, in automotive inverters and require a liquid-cooling radiator for heat dissipation during operation. Such a radiator is fixed to the power module and may require additional components to provide a stable connection and reliable cooling.

Summary of the Invention

Problems to be Solved by the Invention

[0003] There is a need to provide a semiconductor power module that is highly reliable during operation and contributes to effective heat dissipation.

Means for Solving the Problems

[0004] Embodiments of the present disclosure relate to a semiconductor power module having a concept of a radiator that enables effective and reliable heat dissipation. Embodiments of the present disclosure also relate to a corresponding semiconductor power package and a method for manufacturing a semiconductor power module.

[0005] According to one embodiment, a semiconductor power module includes at least one semiconductor power device having, for example, electrical contacts for operation, and a first metal contact and a second metal contact. The first metal contact is directly coupled to a first side of the semiconductor power device. The second metal contact is directly coupled to a second side of the semiconductor power device on the side opposite to the first side with respect to the stacking direction of the semiconductor power module. The first side of the semiconductor power device is also referred to as the bottom side, and the second side of the semiconductor power device is also referred to as the top side.

[0006] The semiconductor power module further includes control terminals electrically coupled to electrical contacts such as the gate of the semiconductor power device. The semiconductor power module further includes a encapsulation portion that surrounds the semiconductor power device and the first and second metal contacts such that the semiconductor power device and the first and second metal contacts are embedded in the encapsulation portion. The control terminals and the respective surfaces of the first and second metal contacts facing outward with respect to the stacking direction are exposed from the encapsulation portion, enabling electrical operation or efficient cooling, respectively.

[0007] By using the above configuration, a semiconductor power module that is highly reliable during operation and contributes to effective heat dissipation can be realized. In particular, the semiconductor power module is suitable for automotive or aerospace applications and / or high voltage direct current (HVDC) applications, for example, for use at voltages of at least 0.5kV. The above-described metal contact structure provided on both sides of the semiconductor power module enables double-sided cooling. Preferably, the metal contacts are in direct contact with the respective cooler structure or even the coolant itself.

[0008] A semiconductor power module may comprise one or more semiconductor power devices. Each semiconductor power device may be formed as a diode such as a metal-oxide-semiconductor field-effect transistor (MOSFET), or more commonly, a metal-insulator-semiconductor field-effect transistor (MISFET), a bi-mode insulated gate transistor (BIGT), an insulated-gate bipolar transistor (IGBT), or a free-wheeling diode (FWD).

[0009] According to a preferred embodiment, the semiconductor power module comprises two or more semiconductor power devices, each having, for example, electrical contacts for operation, and two or more first and second metal contacts. The first metal contacts are directly coupled to the first side of each associated semiconductor power device. The second metal contacts are directly coupled to the second side of each associated semiconductor power device, which is opposite to the first side with respect to the stacking direction. The second metal contacts are arranged laterally spaced from one another on the associated second side of the semiconductor power device with respect to the transverse direction perpendicular to the stacking direction. The semiconductor power module further comprises at least one third metal contact directly coupled to the terminal point of each semiconductor power device on the second side of the associated semiconductor power device. The sealing portion surrounds the semiconductor power device, each of the first and second metal contacts, and the third metal contact, such that the semiconductor power device, each of the first and second metal contacts, and the third metal contact are embedded in the sealing portion. The control terminals are electrically coupled to the respective terminal points of the associated semiconductor power device by a third metal contact, and the control terminals, the surfaces of the first and second metal contacts facing outward with respect to the stacking direction, and the surface of the third metal contact are exposed from the sealing portion.

[0010] The above configuration enables advantageous installation and efficient heat dissipation of a semiconductor power module having multiple semiconductor power devices. The first metal contacts may form a bottom plate so that the second and third metal contacts are formed on the upper side to form their respective tops. The exposed surfaces of the corresponding metal contacts are oriented downwards or upwards accordingly. Thus, the exposed surfaces of one or more first metal contacts are located at the bottom of the semiconductor power module and face away from the top. Consequently, the exposed surfaces of one or more second metal contacts are located at the top of the semiconductor power module and face away from the bottom.

[0011] Therefore, the exposed surfaces of the first and second metal contacts may form the bottom and top surfaces of the semiconductor power module, respectively. However, the encapsulation or semiconductor power module may also include portions extending below or above the exposed surfaces of the first and second metal contacts. A third metal contact may be formed on the same side as the second metal contact and may be exposed in part to allow electrical contact with a control terminal. The third metal contact may substantially form a gate structure connecting the gates of two or more semiconductor power devices. The control terminal, by contacting one or more third metal contacts, realizes a gate collector that connects all the gates. Thus, the control terminal forms a common gate track of the semiconductor power module. The control terminal can be embedded within the encapsulation without being exposed on the upper side of the module and may have only one connection point on one side to allow electrical connection, for example. Alternatively or additionally, the control terminal can be electrically coupled to the second metal contacts of each associated semiconductor power device.

[0012] Power semiconductor modules are essential components of power converters and include power semiconductor devices. These devices dissipate heat during operation, causing a temperature rise within the module. Therefore, cooling the power module is a critical part of the system design that ensures the power module or semiconductor does not fail and that the characteristics of the semiconductor device and the power module are maintained within predictable ranges. Semiconductor power modules can be cooled by heat sinks or coolers cooled by, for example, air, water, or other fluids. Such coolants can flow vertically from top to bottom or vice versa within the power module, with the top or bottom surfaces acting as busbars for the emitter potential or collector potential of the semiconductor module, respectively. In the context of this disclosure, it is a known fact that, in the case of conventional power module and cooling concepts, the internal structure of the power module, which may include ceramic layers, spacers, or spring elements to ensure working contact between the emitter and collector sides, primarily removes dissipated heat from the collector side of the power module. Such additional elements as a spring system on the emitter side impede thermal performance.

[0013] According to the described configuration of a semiconductor power module containing one or more semiconductor power devices, thermal performance can be significantly improved. The described power module design enables true bifacial cooling, with heat dissipation evenly distributed between the top and bottom sides of the semiconductor power module. The described semiconductor power module structure eliminates the need for substrates, spring systems, or other internal elements.

[0014] The internal spaces of the semiconductor power module surrounding, above, and below the semiconductor device can be filled with sealing material. For example, the sealing may consist of, or contain, a polymer material of an epoxy molding material having a filler content of more than 60% by weight. Alternatively, the filler content may be set to more than 40% or more than 70% by weight. Thus, the sealing can be formed by molding to reliably embed the components of the semiconductor power module. Alternatively or additionally, the sealing may consist of, or contain, a thermosetting material or a thermoplastic material.

[0015] In yet another embodiment, the sealing portion may be formed to include a periphery having a plurality of creepage ribs that laterally surround one or more semiconductor power devices and each of the first and second metal contacts. The shape of the creepage ribs is preferably formed according to, for example, a given voltage class, a given sealing material and / or degree of contamination. Such a voltage class can be set to 3.3kV or 5.2kV or up to 10kV. A given sealing material can be set to include an epoxy molded composite material. The degree of contamination can be set to, for example, 2 and may include information about air or ambient gas and / or pressure and / or density.

[0016] According to yet another embodiment of the semiconductor power module, two or more first metal contacts are formed from a single component arranged laterally spaced apart from each other by recesses on the associated bottom or first side of the semiconductor power device with respect to the lateral direction. The first metal contacts are configured as respective protrusions rising from a common continuous plate-like bottom member, each protrusion facing the respective bottom of the associated semiconductor power device. Alternatively, the first metal contacts may be formed as separate elements and then connected in steps. The recesses form a predetermined notch between two adjacent protrusions. The thickness of such a plate-like bottom in each recess region may be formed to be up to 80% less than the total thickness of the first metal contact including the adjacent protrusions and the plate-like bottom. It is a finding in the context of this disclosure that such a configuration can significantly reduce thermomechanical stress inside the semiconductor power module and contribute to extremely stable and efficient heat dissipation.

[0017] In yet another embodiment, the first, second, and / or third metal contacts (if any) can be bonded to the corresponding parts of the associated semiconductor power device and can be manufactured from metal or a metal alloy. The first, second, and / or third metal contacts may consist of at least one of copper, aluminum, molybdenum, and magnesium, or may primarily consist of at least one of these.

[0018] According to one embodiment, the semiconductor power package includes a cooler unit for liquid or fluid cooling of a semiconductor power device, comprising a first cooler structure and a second cooler structure. The semiconductor power package further includes an embodiment of a semiconductor power module, where each of the first metal contacts is directly coupled to the first cooler structure, and each of the second metal contacts is directly coupled to the second cooler structure. In particular, the first and / or second cooling structures may include an inlet, an outlet, and at least one of a heat pipe or fluid channel connecting the inlet and outlet to guide a coolant. The semiconductor power package may further include two or more coolers on one or both sides of the semiconductor power module.

[0019] As a result, the described semiconductor power package includes embodiments of the semiconductor power module, and the described features and characteristics of the semiconductor power module are also disclosed with respect to the semiconductor power package, and vice versa.

[0020] According to one embodiment, a method for manufacturing an embodiment of a semiconductor power module comprises providing one or more semiconductor power devices, one or more first metal contacts, and one or more second metal contacts. The method further comprises bonding each semiconductor power device and each of the first metal contacts to each other by die bonding or the like, such that the first metal contacts are directly bonded to the first side of the associated semiconductor power device. The method further comprises bonding each semiconductor power device and each of the second metal contacts to each other by top bonding, for example, such that the second metal contacts are directly bonded to the second side of the associated semiconductor power device on the side opposite to the first side with respect to the stacking direction of the semiconductor power module. The method further comprises forming a sealing portion by molding with a polymer material, for example, epoxy molding material, such that the semiconductor power devices and the first and second metal contacts are surrounded and embedded within the sealing portion. The bottom or top surface of the first or second metal contacts faces outward from the sealing portion with respect to the stacking direction and is exposed from the sealing portion. The method further comprises providing control terminals and electrically coupling the control terminals to the respective electrical contacts of the associated semiconductor power device, for example, by one or more third metal contacts, such that the control terminals are at least partially exposed from the sealing portion.

[0021] The sealing part can be manufactured from a high-temperature resistant material by a molding process such as transfer molding, injection molding, and / or compression molding. According to one embodiment of the manufacturing method, the formation of the sealing part by molding involves surrounding one or more semiconductor power devices and their respective first and / or second metal contacts and completely embedding them within the sealing part, and then exposing the respective surfaces of the first and second metal contacts from the sealing part so as to face outward in the stacking direction. Alternatively or additionally, the control terminals can first be completely embedded in the sealing part and then exposed. The exposure of each metal contact or element can be achieved by removing the covering sealing material using, for example, mechanical grinding, polishing, cutting, and / or other machining methods. Alternatively or additionally, the material of the sealing part can be chemically removed.

[0022] As a result, the described method is configured to manufacture an embodiment of a semiconductor power module, and the described features and characteristics of the semiconductor power module are also disclosed with respect to the manufacturing method, and vice versa.

[0023] The manufacturing of an embodiment of a semiconductor power module can be performed as follows. 1. Die bond one or more semiconductor chips onto a bottom contact assembly, preferably by sintering Ag or Cu, to realize the first metal contact.

[0024] 2. Bond an upper contact assembly, preferably by sintering Ag or Cu, to realize the second metal contacts for power (source / emitter) and control (gate).

[0025] 3. Form the sealing part of the semiconductor power module by transfer molding. 4. Attach a control board, for example, using a two-layer printed circuit board (PCB) having a layer for the gate contact and a layer for the source / emitter Kelvin contact, to realize the control terminals.

[0026] 5. Subsequently, the semiconductor power module can be incorporated into a cooler unit having cooler accessories on each side. The size of the semiconductor power module enables direct bonding of the heat sink, for example, Cu or Ag sintering, or dry bonding.

[0027] The first and second metal contacts realize metal cooler components according to a predetermined design. The exposed surface may include, for example, a rectangular, square, elliptical or circular shape. The semiconductor device may be based on silicon (Si) or silicon carbide (SiC). The described configuration of the semiconductor power module can be stacked or joined to form a unit or package having a plurality of semiconductor power modules, increasing or decreasing the current capacity in consideration of the intended application.

[0028] The described semiconductor power module is compatible with relatively large Si chips realized by semiconductor power devices and can have a size exceeding 100 mm per chip. 2 According to SiC chips realized by semiconductor power devices, these can have a size of, for example, 25 mm. 2 According to one embodiment, assuming a creepage distance requirement of, for example, 5.2 kV, 6 Si-based semiconductor power modules each including 8 BIGTs can be combined, having a total semiconductor area of 14,000 mm. 2 According to another embodiment, assuming a creepage distance requirement of, for example, 3.3 kV, 9 SiC-based semiconductor power modules each including 16 MOSFETs can be combined, including a total semiconductor area of 3,600 mm. 2

[0029] The first metal contacts forming the bottom contact assembly are preferably manufactured from a single piece of metal that is integral but includes notches that separate individual islands for each semiconductor chip. These notches or recesses significantly reduce thermomechanical stress within the semiconductor chip. The semiconductor power module can be realized as a non-isolated module, and thermal diffusion within the bottom contact assembly can be kept low and negligible, making it possible to raise the junction temperature only slightly, for example, below 2K.

[0030] The described semiconductor power module configuration enables effective bilateral cooling, contributing to reliable heat dissipation during operation of the semiconductor power module or its corresponding semiconductor power package. The semiconductor power module facilitates the transition to SiC devices, which have significantly lower performance losses, for example, as required in the HVDC market.

[0031] Furthermore, the described semiconductor power module design can reduce costs by employing a double-sided cooling approach, thereby reducing the thermal resistance from the power module junction to the case by 40% compared to conventional configurations. Consequently, the described semiconductor power module configuration also achieves higher current capacity compared to conventional configurations. By using superior encapsulation materials, the semiconductor power module design can enable higher junction temperatures depending on the requirements. This is particularly beneficial for SiC devices, which are typically capable of operating at extremely high temperatures exceeding 200°C but are limited by packaging technology.

[0032] Furthermore, by replacing the silicone gel encapsulation with a molded material containing a large amount of inert filler, the gas pressure can be significantly reduced, thus easing the requirements for cell design. Even in the extreme case where an arc is formed between the collector and emitter sides of a semiconductor power module, metallic and semiconductor materials are present along the linear path of the arc. Therefore, power module stacks with multiple semiconductor power modules can be simplified. For example, components such as external frames can be omitted, and the strength of the busbars can be reduced.

[0033] Exemplary embodiments are described below with reference to schematic diagrams and reference numbers. [Brief explanation of the drawing]

[0034] [Figure 1] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 2] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 3] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 4] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 5] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 6] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 7] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 8] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 9] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 10] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 11] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 12]This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 13] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 14] This figure shows an embodiment of a semiconductor power module or semiconductor power package or its components. [Figure 15] Figures 1 to 14 are flowcharts showing the manufacturing methods for semiconductor power devices. [Modes for carrying out the invention]

[0035] The attached drawings are included to enhance understanding. The embodiments shown in the drawings are for illustrative purposes only and are not necessarily drawn to actual size. The same reference numerals indicate elements or components with the same function. Where elements or components functionally correspond to each other in the drawings, the description is not repeated in subsequent drawings. For clarity, elements may not necessarily be indicated by the same reference numeral in all drawings.

[0036] Figures 1 to 14 show embodiments of a semiconductor power module 1 or its components from different viewpoints. A semiconductor power module 1 (hereinafter referred to as module 1) can form a semiconductor power stack or a subunit of a package 3 having multiple modules 1. Module 1 comprises multiple semiconductor power devices 2 (hereinafter referred to as device 2) embedded in a encapsulation portion 4, each device having, for example, electrical contacts for operation. For example, device 2 can be implemented as an IGBT, MOSFET / MISFET, or BIG T having at least three external contacts (e.g., drain, source, and gate or collector, emitter, and gate, respectively).

[0037] Module 1 further comprises a plurality of first metal contacts 11 directly coupled to the first side 5 of each associated device 2 (see Figures 11 and 12). Module 1 further comprises a plurality of second metal contacts 12 directly coupled to the second side 6 of each associated device 2 opposite to the first side 5 with respect to the stacking direction R (see also Figure 6). The second metal contacts 12 are spaced laterally apart from each other on each associated second side 6 of device 2 with respect to the transverse directions A and B perpendicular to the stacking direction R. Module 1 further comprises a plurality of third metal contacts 13 directly coupled to the terminal points 7 of device 2 on the second side 6 of device 2 (see Figures 6 and 10-13). Module 1 further includes control terminals 14 electrically coupled to each terminal point of associated device 2 by the third metal contacts 13.

[0038] The sealing portion 4 is formed to surround the device 2 and each of the first metal contact 11, the second metal contact 12, and the third metal contact 13, and these elements are embedded in the sealing portion 4. The control terminal 14 and the surfaces 15, 16 of the first metal contact 11 and the second metal contact 12, respectively, and the surface 17 of the third metal contact 13, which face outward with respect to the stacking direction R, are exposed from the sealing portion 4 (see Figures 2, 6, 8, and 10-14).

[0039] The sealing portion 4 can be formed from a polymer epoxy molding material having a given filler content (e.g., 60% by weight). The first, second, and third metal contacts 11-13 are joined to the associated first side 5 or second side 6 of the respective device 2 and can be made of metal or metal alloy (e.g., mainly containing Cu, Al, Mo, and / or Mg).

[0040] The first metal contact 11 can be formed from a single piece such that the protrusions 9 are spaced laterally apart from each other by their respective recesses 8 on the associated first side 5 of the device 2 (see Figure 8). Thus, the first metal contact 11 is configured as a protrusion 9 rising from a common continuous plate-like base member 10, with the protrusions 9 intended to face the bottom surface of the associated device 2. For the thickness z of the first metal contact 11, refer to Figures 8 and 9. The thickness z1 of the plate-like base 10 in each region of the notch or recess 8 can be formed to be up to 80% smaller than the total thickness z0 of the protrusions 9 and the plate-like base 10 combined.

[0041] Figure 8 shows that the first metal contact 11 realizes a plate-like base 10 with recesses 8 between individual protrusions 9 that form their respective mounting positions to the associated device 2. Thermomechanical stress can be significantly reduced instead of a large support plate (see Figure 9). Figure 9 shows the effect of the notch or recess 8 in the first metal contact 11 on the thermomechanical stress in the device 2. Figure 9 shows the mean von Mises stress with respect to the depth z2 of the recess 8. A large support plate has limitations, as shown in the upper left of Figure 9, corresponding to a recess depth z2 equal to 0. Another limitation arises, for example, in the lower right of Figure 9, corresponding to a recess depth z2 equal to 2.5 mm.

[0042] As shown in the perspective view of Figure 1, module 1 comprises eight embedded devices 2, eight second metal contacts 12, and corresponding exposed surfaces 16. The control terminals 14 are formed as metal strip members connecting third metal contacts 13 that connect the gates or terminal points 7 of each device 2 (see Figures 10 and 12).

[0043] According to the perspective view in Figure 2, module 1 comprises 16 embedded devices 2, 16 second metal contacts 12, and corresponding exposed surfaces 16. The control terminals 14 are not shown in Figure 2.

[0044] According to the top view in Figure 3, module 1 comprises nine embedded devices 2, nine second metal contacts 12, and corresponding exposed surfaces 16. The control terminals 14 are not shown in Figure 3. The exposed areas or surfaces 16 of the second metal contacts 12 on the top side and the top surface of the control board are visible to each other.

[0045] Figure 4 shows a semiconductor power package 3 (hereinafter referred to as package 3) including one or more embodiments of module 1 and a cooler unit 20 for liquid cooling of device 2. The cooler unit 20 may include one or more cooling structures 21, 22 coupled to the exposed surfaces 15, 16 of the first and second 11, 12, respectively. According to Figure 4, the cooler unit 20 includes one upper cooling structure 22 directly coupled to each of the second metal contacts 12. According to Figure 10, the cooler unit 20 includes two cooling structures 21, 22. The first cooling structure 21 realizes a bottom cooler directly coupled to each of the first metal contacts 11, and the second cooling structure 22 realizes an upper cooler directly coupled to each of the second metal contacts 12. The coolant of the cooler unit 20 may, but is not required to, be in direct contact with the exposed surfaces 15, 16 of the first and second metal contacts 11, 12. The coolant is selected according to the intended application.

[0046] The molded body of the sealing portion 4 includes a peripheral edge portion 41 and creepage ribs 42 provided on the peripheral edge portion 41 over the entire circumference of module 1 to satisfy a predetermined creepage distance (see Figure 7).

[0047] Figures 11 to 14 show the manufacturing steps for producing the embodiment of Module 1 shown in Figures 1, 5 to 7, and 10. Each of Figures 11 to 14 shows the respective manufacturing step in an oblique view at the top, a side view corresponding to the middle, and a top view corresponding to the bottom.

[0048] Such a process can be formed according to a flowchart of a method for manufacturing embodiments of module 1 and / or package 3.

[0049] In step S1, the first metal contact 11 is provided as a plate-shaped bottom 11 with a plurality of protrusions 9 and recesses 8 between them. According to the embodiments shown in Figures 11 to 14, the metal bottom assembly has eight protrusions 9 and seven recesses 8 formed in the lateral directions A and B. Further components of the module 1, and optionally the package 3, may also be provided. In particular, the shapes of the first and / or second metal contacts 11, 12 are formed to match the dimensions and shape of the chip or device 2.

[0050] In yet another step S2, the chip or device 2 is die-bonded onto the first metal contact 11 or associated protrusion 9 by, for example, Ag or Cu sintering (see Figure 11).

[0051] In yet another step S3, the second metal contact 12 is also bonded to the associated device 2, for example, by Ag or Cu sintering (see Figure 12). In this respect, the upper metal assembly may also include the formation of power (source / emitter) and control (gate) contacts. Thus, a third metal contact 13 can be realized by forming two metal connection structures between each of the four devices 2. The third metal contact 13 is formed in the shape of a rectangular or square frame that connects the respective gates or terminal points 7 of the devices 2 facing each other.

[0052] In yet another step S4, the sealing portion 4 is formed, for example, by transfer molding, injection molding, or compression molding. The surfaces 15-17 of the first, second, and third metal surfaces 11-13 are exposed from the sealing portion 4. The exposed surface 17 of the third metal contact 13 forms an extension of the terminal point 7 of the device 2.

[0053] In yet another step S5, the control terminal 14 is attached to the exposed surface 17 of the sealing portion and the third metal contact 13, and consequently to the terminal point 7 of the device 2. The control terminal 14 can be implemented, for example, as a two-layer printed circuit board. Such a two-layer PCB may include a layer for the gate contact or the third metal contact 13 and another layer for the source / emitter Kelvin contact.

[0054] Subsequently, in yet another step, module 1 can be combined with one or more other modules 1 and / or integrated into a cooler unit 20 having cooler mounting sections on each side. Depending on the size of module 1, direct bonding of the heatsink, such as Cu or Ag sintering or dry contact, is possible. Such a semiconductor power package 3 may include, for example, multiple modules 1 connected in parallel to supply a predetermined current strength.

[0055] Module 1, shown in Figure 1 or Figure 2, can be designed for most applications with typical current ratings of 100–1200 amperes and voltage classes such as 750V, 1.2kV, 3.3kV, 4.5kV, and 5.2kV. Module 1 can be configured for voltage source converter (VSC) and modular multilevel converter (MMC) deployments in HVDC applications. For example, by designing Module 1 with a 500A current rating and connecting 3, 4, 5, or 6 of them in parallel, as shown in Figures 3 and 4, rated currents of 1500A, 2000A, 2500A, and 3000A can be obtained, respectively. Higher currents can be obtained by connecting even more modules in parallel.

[0056] Module 1 can be configured for automotive or aircraft applications, either individually without parallel connection or in parallel connection, depending on the rated current requirements. However, the typical range of rated current per module 1 is as described above. Examples include modules of 250A, 500A, or 1000A.

[0057] The embodiments shown or described in Figures 1 to 14 above represent exemplary embodiments of the improved semiconductor power module 1 and its manufacturing method, and therefore do not constitute a complete list of all embodiments. Actual arrangements and methods may differ from those shown in the embodiments relating to, for example, the cooler unit. [Explanation of symbols]

[0058] Reference sign 1. Semiconductor power module 2. Semiconductor Power Devices 3. Semiconductor Power Package 4. Sealing part 41 Peripheral area 42 Surface Ribs 5. First side of semiconductor power device 6. Second side of semiconductor power device 7. Terminal points / gates of semiconductor power devices 8 Recess between adjacent first metal contacts 9. Convex part 10 Bottom member 11 First metal contact 12. Second metal contact 13. Third metal contact 14 Control terminals 15 Upper surface of the first metal contact 16 Bottom surface of the second metal contact 17 Upper surface of the third metal contact 20 Cooler Units 21. First Cooler Structure 22. Second Cooler Structure A Lateral direction of semiconductor power module B. Lateral direction of semiconductor power module R Stacking direction of semiconductor power modules st Thermomechanical stress z Thickness of the first metal contact z0 Total thickness of the first metal contact z1 Thickness of the base member Thickness of the convex part of z2 / Depth of the concave part

Claims

1. A semiconductor power module (1), A semiconductor power device (2) having electrical contacts, A first metal contact (11) is directly coupled to the first side (5) of at least one semiconductor power device (2), A second metal contact (12) is directly coupled to the second side (6) of at least one semiconductor power device (2) on the side opposite to the first side (5) with respect to the stacking direction (R) of the semiconductor power module (1), A control terminal (14) electrically coupled to the electrical contact (7) of at least one semiconductor power device (2), A semiconductor power module (1) comprising a sealing portion (4), wherein the sealing portion (4) surrounds the at least one semiconductor power device (2) and the first and second metal contacts (11, 12) so that the at least one semiconductor power device (2) and the first and second metal contacts (11, 12) are embedded in the sealing portion (4), and the control terminal (14) and the respective surfaces (15, 16) of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R) are exposed from the sealing portion (14).

2. Two or more semiconductor power devices (2), each having an electrical contact, The semiconductor power module (1) comprises two or more first metal contacts (11), at least one of which is directly coupled to the first side (5) of each associated semiconductor power device (2), and the semiconductor power module (1) further comprises The semiconductor power module (1) comprises two or more metal contacts (12), at least one second metal contact (12) is directly coupled to the second side (6) of each associated semiconductor power device (2) opposite to the first side (5) with respect to the stacking direction (R), the two or more metal contacts (12) are spaced apart from each other laterally on the associated second side (6) of the two or more semiconductor power devices (2) with respect to the lateral direction (A, B) perpendicular to the stacking direction (R), and the semiconductor power module (1) further comprises, The associated semiconductor power device (2) has at least one third metal contact (13) on the second side (6) that is directly coupled to the terminal point (7) of each of the two or more semiconductor power devices (2), The sealing portion (4) surrounds the two or more semiconductor power devices (2), each of the first and second metal contacts (11, 12), and the third metal contact (13), so that the two or more semiconductor power devices (2), each of the first and second metal contacts (11, 12), and the third metal contact (13) are embedded in the sealing portion (4). The control terminal (14) is electrically coupled to the respective terminal points (7) of the associated semiconductor power device (2) by the third metal contact (13), and the control terminal (14), the respective surfaces (15, 16) of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R), and the surface (17) of the third metal contact (13) are exposed from the sealing portion (4), as described in claim 1.

3. The semiconductor power module (1) according to claim 2, wherein the two or more first metal contacts (11) are formed from a single portion that is spaced laterally apart from each other by recesses (8) on the associated first side (5) of the two or more semiconductor power devices (2) with respect to the lateral direction (A, B), and each of the protrusions (9) faces the associated semiconductor power devices (2).

4. The thickness (z) of the continuous plate-shaped bottom member (10) in each region of the recess (8) １ ) is the total thickness (z) between the adjacent protrusions (9) and the continuous plate-shaped bottom member (10). ０ The semiconductor power module (1) according to claim 3, which is up to 80% smaller compared to ).

5. The semiconductor power module (1) according to any one of the preceding claims, wherein the control terminal (14) is electrically coupled to each of the second metal contacts (12) of the associated semiconductor power device (2).

6. A semiconductor power module (1) according to any one of the preceding claims, wherein at least one of each of the first metal contacts (11), each of the second metal contacts (12), and each of the third metal contacts (13) is made of at least one of copper, aluminum, molybdenum, and magnesium, or includes at least one of these.

7. Each of the at least one semiconductor power device (2) is formed as at least one of a metal-oxide-semiconductor field-effect transistor, a bimode insulated-gate transistor, and an insulated-gate bipolar transistor, according to any one of the preceding claims, the semiconductor power module (1).

8. A semiconductor power module (1) according to any one of the preceding claims, wherein at least one of each of the first metal contacts (11), each of the second metal contacts (12), and each of the third metal contacts (13) is bonded to each of the first side (5) or each of the second side (6) of the associated semiconductor power device (2).

9. The semiconductor power module (1) according to any one of the preceding claims, wherein the sealing portion (4) is composed of or includes a polymer material of an epoxy molding material having a filler content of more than 60% by weight.

10. The semiconductor power module (1) according to any one of the preceding claims, wherein the sealing portion (4) includes a peripheral portion (41) having a plurality of creepage ribs (42) that laterally surround the at least one semiconductor power device (2) and each of the first and second metal contacts (11, 12), the shape of the plurality of creepage ribs (42) is formed to match at least one of a given voltage class, a given sealing material, and a degree of contamination.

11. Semiconductor power package (3), A cooler unit (20) for liquid cooling of a semiconductor power device (2), including a first cooler structure (21) and a second cooler structure (22), A semiconductor power package (3) comprising a semiconductor power module (1) as described in any one of the preceding claims, wherein each of the first metal contacts (11) is directly coupled to the first cooler structure (21) and each of the second metal contacts (12) is directly coupled to the second cooler structure (22).

12. The semiconductor power package (3) according to claim 11, wherein the first and / or second cooling structure (21, 22) includes an inlet, an outlet, and one of a heat pipe or fluid channel connecting the inlet and the outlet to guide a coolant.

13. A method for manufacturing a semiconductor power module (1) according to any one of claims 1 to 10, The device includes at least one semiconductor power device (2), a first metal contact (11), and a second metal contact (12). The first metal contact (11) is coupled to the first side (5) of the at least one semiconductor power device (2) and the first metal contact (11) such that the first metal contact (11) is directly coupled to the first side (5) of the at least one semiconductor power device (2), The at least one semiconductor power device (2) and the second metal contact (12) are coupled to each other such that the second metal contact (12) is directly coupled to the second side (6) of the at least one semiconductor power device (2) on the side opposite to the first side (5) with respect to the stacking direction (R) of the semiconductor power module (1). The method further comprises forming the sealing portion (4) such that the at least one semiconductor power device (2) and the first and second metal contacts (11, 12) are embedded in the sealing portion (4), wherein the respective surfaces (15, 16) of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R) are exposed from the sealing portion (4), and the method further comprises A method comprising providing a control terminal (14) and electrically coupling the control terminal (14) to an electrical contact (7) of the at least one semiconductor power device (2) that is exposed from the sealing portion (4).

14. The system includes two or more semiconductor power devices (2), two or more first metal contacts (11), and two or more metal contacts (12). Each semiconductor power device (2) and each of the first metal contacts (11) are coupled to each other such that each of the first metal contacts (11) is directly coupled to the associated first side (5) of each of the semiconductor power devices (2). The method comprises coupling each semiconductor power device (2) and each second metal contact (12) to each other such that each second metal contact (12) is directly coupled to the associated second side (6) of each semiconductor power device (2) on the side opposite to the first side (5) with respect to the stacking direction (R), wherein the second metal contacts (12) are arranged at a lateral distance from each other on the associated second side (6) of each semiconductor power device (2) with respect to the lateral direction (A, B) perpendicular to the stacking direction (R) of the semiconductor power module (1), and the method further comprises, At least one third metal contact (13) is provided, and the third metal contact (13) is directly coupled to the respective terminal points (7) of each of the semiconductor power devices (2) on the second side (6), The sealing portion (4) is formed such that each of the semiconductor power devices (2), each of the first and each of the second metal contacts (11, 12), and the third metal contact (13) are surrounded by the sealing portion (4) or embedded in the sealing portion (4). The method according to claim 13, further comprising: electrically coupling the control terminal (14) to the respective terminal points (7) of the associated semiconductor power device (2) by the third metal contact (13) such that the control terminal (14) and the respective surfaces (15, 16) of the respective first and respective second metal contacts (11, 12) facing outward with respect to the stacking direction (R) and the surface (17) of the third metal contact (13) are exposed from the sealing portion (4).

15. The method according to claim 13 or 14, wherein forming the sealing portion (4) is performed by transfer molding and / or injection molding of a polymer material of the epoxy molding material.

16. Forming the sealing portion (4) by molding is To surround or embed in the sealing portion (4) the at least one semiconductor power device (2) and each of the first and / or second metal contacts (11, 12), and then The method according to claim 15, further comprising exposing the respective surfaces (15, 16) of the first and second metal contacts (11, 12) that face outward with respect to the stacking direction (R) from the sealing portion (4).

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