Method for synthesizing colloidal InSb quantum dots

JP2026519028APending Publication Date: 2026-06-11COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES +2

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Filing Date
2023-06-02
Publication Date
2026-06-11

Smart Images

  • Figure 2026519028000001
    Figure 2026519028000001
  • Figure 2026519028000002
    Figure 2026519028000002
  • Figure 2026519028000003
    Figure 2026519028000003
Patent Text Reader

Abstract

The present invention relates to a method for synthesizing colloidal InSb quantum dots (InSb QDs), comprising the step of premixing an In precursor and an Sb precursor at a temperature of less than 100°C while stirring.
Need to check novelty before this filing date? Find Prior Art

Claims

[Claim 1] A method for synthesizing colloidal InSb quantum dots (InSb QDs), comprising the following steps: (1) A step of premixing the In precursor and the Sb precursor, a) Sb(NR 1 R 2 )) 3 (where R 1 and R 2 are independently C 1 -C 8 alkyl and / or C 6 -C 10 aryl), into a solution containing a saturated fatty amine having 4 to 20 carbon atoms, or an unsaturated fatty amine having 12 to 20 carbon atoms and 1 to 3 unsaturated double bonds b) Add In(I)X (where X is Cl, Br, or I) to a solution containing a saturated fatty amine having 12 to 20 carbon atoms, or an unsaturated fatty amine having 12 to 20 carbon atoms and 1 to 3 unsaturated double bonds, or a saturated fatty alkane having 12 to 30 carbon atoms, or an unsaturated fatty alkene having 12 to 30 carbon atoms and 1 to 6 unsaturated double bonds, or a mixture of several of these compounds. The process involves heating the resulting mixture to a temperature of less than 100°C while stirring, (2) A step of synthesizing InSb quantum dots (InSb QDs), a) A solvent or solvent mixture selected from the group consisting of saturated fatty amines having 12 to 20 carbon atoms, or unsaturated fatty amines having 12 to 20 carbon atoms and 1 to 3 unsaturated double bonds, and unsaturated fatty alkenes having 12 to 30 carbon atoms and 1 to 6 unsaturated double bonds is heated to a temperature of 150°C to 400°C. b) The solution obtained in (1), and C 4 ~C 25 Alkylphosphine, C 4 ~C 25 Alkylphosphine oxide, C 4 ~C 25 Alkylphosphonic acid, and C 4 ~C 25 A coordinating agent selected from the group consisting of alkylphosphinic acids is added to the solvent or solvent mixture. i) Introduce at a temperature of 150°C to 400°C, and hold the resulting mixture at a temperature of 150°C to 400°C for 1 minute to 5 hours while stirring, or ii) A process in which the mixture is introduced at a temperature of 20°C to 30°C, the temperature of the resulting mixture is raised to 150°C to 400°C and heated, and the resulting mixture is held at a temperature of 150°C to 400°C for 1 minute to 5 hours while stirring. Methods that include... [Claim 2] The method according to claim 1, wherein the unsaturated fatty amine having 12 to 20 carbon atoms and 1 to 3 unsaturated double bonds is selected from the group consisting of palmitrailamine, oleylamine, linolylamine, linolenylamine, and petroselinylamine. [Claim 3] The method according to claim 1 or 2, wherein the unsaturated fatty alkene having 12 to 20 carbon atoms and 1 to 6 unsaturated double bonds is selected from the group consisting of 1-octadecene, 1-eicosene, and squalene. [Claim 4] The method according to any one of claims 1 to 3, wherein the saturated fatty alkane having 12 to 30 carbon atoms is selected from the group consisting of octadecane and squalane. [Claim 5] The method according to any one of claims 1 to 4, wherein the saturated fatty amine having 12 to 20 carbon atoms may be selected from the group consisting of dodecylamine, tetradecylamine, hexadecylamine, and octadecylamine. [Claim 6] The method according to any one of claims 1 to 5, wherein the coordinating agent is selected from the group consisting of tri-n-octylphosphine (TOP), tri-n-butylphosphine (TBP), tri-n-octylphosphine oxide (TOPO), dodecylphosphonic acid (DDPA), tetradecylphosphonic acid (TDPA), hexadecylphosphonic acid (HDPA), and octadecylphosphonic acid (ODPA). [Claim 7] In process (1) InX:Sb(NR 1 R 2 ) 3 The method according to any one of claims 1 to 6, wherein the molar ratio of is between 3:1 and 6:

1. [Claim 8] The method according to any one of claims 1 to 7, wherein the molar ratio of InX to the coordinating agent in step (2) is between 1:1 and 1:

3. [Claim 9] The method according to any one of claims 1 to 8, wherein the mixture in step (1)b) is heated to a temperature of 25°C to 100°C. [Claim 10] The method according to any one of claims 1 to 9, wherein the mixture in step (1)b) is heated for 30 minutes to 3 hours. [Claim 11] The solvent in step (2) a) is first heated to a temperature of 100°C to 130°C for 10 -1 mbar~10 -2 The method according to any one of claims 1 to 10, wherein the material is degassed under a vacuum of mbar for 30 minutes to 2 hours, and then heated to 150°C to 400°C. [Claim 12] The method according to any one of claims 1 to 11, comprising introducing the solution obtained in (1) and the coordinating agent in step (2)b) into the solvent or solvent mixture at a temperature of 150°C to 400°C, and holding the resulting mixture at a temperature of 150°C to 400°C for 1 minute to 5 hours. [Claim 13] Use of the method according to any one of claims 1 to 12 for manufacturing infrared biological imaging devices, NIR / SWIR photodetectors, (1.4 μm) detectors for telecommunications, solar cells, infrared light-emitting diodes (LEDs), field-effect transistors, or thermoelectric devices. [Claim 14] A method for manufacturing infrared biological imaging devices, NIR / SWIR photodetectors, detectors compatible with wavelengths used in telecommunications (1.4 μm) detectors / optical fibers (1.3 μm and 1.55 μm), solar cells, infrared light-emitting diodes (LEDs), field-effect transistors, or thermoelectric devices, a) A step of synthesizing colloidal InSb quantum dots (InSb QDs) according to the method of the present invention, b) A process for performing surface engineering on InSb QD, c) A process for fabricating an InSb QD thin film, d) A step of incorporating the QD thin film into the (optical) electronic device, Methods that include...