Silicon-containing thin film deposition composition and silicon-containing thin film produced using the same

Abstract

The present invention relates to a silicon-containing thin film deposition composition containing a fluoroaminosilane compound as a precursor and a method for producing a silicon-containing thin film using the same. The silicon-containing thin film produced using this composition is expected to be useful as an insulating film for semiconductor devices, particularly as an insulating film for spacers, because it has excellent chemical and thermal stability as well as a sufficiently low dielectric constant.

Description

[Technical Field]

[0001] The present invention relates to low-dielectric silicon-containing thin films, and more particularly to a silicon-containing thin film deposition composition comprising a novel fluoroaminosilane compound and a silicon-containing thin film produced using the same. [Background technology]

[0002] Silicon-containing thin films, manufactured using various deposition methods such as atomic layer deposition (ALD) and chemical vapor deposition (CVD), are used in semiconductor technology as semiconductor substrates, diffusion masks, antioxidant films, dielectric films, and insulating films.

[0003] On the other hand, insulating films used as spacers for semiconductor devices must have a low dielectric constant and excellent etching resistance. Furthermore, in order to be applied to actual processes, they must also satisfy conditions such as ease of processing and excellent chemical and thermal stability. As a result, the required physical properties of insulating films used as spacers for next-generation semiconductor devices are becoming increasingly sophisticated.

[0004] For this reason, research is ongoing to lower the dielectric constant of silicon-containing thin films, but problems remain such as insufficient dielectric constant being achieved, reduced thermal stability and etching resistance, and decreased productivity due to low thin-film formation rates. Another proposed method to simultaneously satisfy the low dielectric constant and etching resistance of silicon-containing thin films is to dope the silicon-containing thin film with fluorine (F) after its formation. However, this method has limitations, as it involves an additional fluorine doping step, complicating the process, and doping is mainly performed near the surface of the thin film, making it difficult to dope in regions deeper than the surface, thus degrading the quality of the thin film. [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] One aspect of the present invention provides a composition for depositing a silicon-containing thin film that can provide a high-quality low-dielectric thin film. Also, one aspect of the present invention provides a manufacturing method capable of depositing a thin film at a high thin film deposition rate and manufacturing a high-quality silicon-containing thin film by a simple manufacturing process. Also, one aspect of the present invention provides a fluoroaminosilane compound having a novel structure that can be usefully used as a precursor of the silicon-containing thin film.

Means for Solving the Problems

[0006] One aspect of the present invention provides a composition for depositing a silicon-containing thin film, which contains a fluoroaminosilane compound represented by the following Chemical Formula 1.

[0007] [Chemical Formula 1] TIFF2026519946000002.tif19170

[0008] (In the above Chemical Formula 1, A is hydrogen, (C1-C7)alkyl, fluoro, fluoro(C1-C7)alkyl, or NR a R b and R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b and R a and R b are each independently hydrogen or (C1-C7)alkyl, R1 is (C1-C7)alkyl, R2 is (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ), R 11 is fluoro, R 12 and R 13These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0009] A is fluoro or (C1-C4)alkyl, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, or fluoro, R1 is branched (C3-C7)alkyl, R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 is fluoro, and R 12 and R 13 Each of these elements may independently be hydrogen or a (C1-C4) alkyl group. The aforementioned A may be fluoro or methyl.

[0010] The aforementioned fluoroaminosilane compound may be represented by the following chemical formula 2.

[0011] [Chemical formula 2] TIFF2026519946000003.tif19170

[0012] (In the above chemical formula 2, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR a R b And, R a and R b Each of these is independently either hydrogen or a (C1-C7) alkyl group. R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 It is fluoro, R 12 and R13 These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0013] In the above chemical formula 1, R is hydrogen, (C1-C4) alkyl, (C2-C4) alkenyl, or fluoro, R1 is a branched (C3-C7) alkyl, and R2 is a branched (C3-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 is fluoro, and R 12 and R 13 Each of these elements may independently be hydrogen or a (C1-C4) alkyl group.

[0014] The aforementioned fluoroaminosilane compound may be represented by the following chemical formula 3.

[0015] [Chemical formula 3] TIFF2026519946000004.tif19170

[0016] (In the above chemical formula 3, R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 It is fluoro, R 12 and R 13 These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0017] The fluoroaminosilane compound may be selected from the following compounds. TIFF2026519946000005.tif200170

[0018] Another aspect of the present invention provides a silicon-containing thin film produced from a fluoroaminosilane compound represented by the following chemical formula 1 or a silicon-containing thin film deposition composition containing the same.

[0019] [Chemical formula 1] TIFF2026519946000006.tif19170

[0020] (In the above chemical formula 1, A, R, R1, and R2 are as defined above.) The silicon-containing thin film according to one embodiment may further contain fluorine.

[0021] Another aspect of the present invention provides a method for producing a silicon-containing thin film using a fluoroaminosilane compound represented by the following chemical formula 1 or a silicon-containing thin film deposition composition containing the same.

[0022] [Chemical formula 1] TIFF2026519946000007.tif19170

[0023] (In the above chemical formula 1, A, R, R1, and R2 are the same as defined above.

[0024] A method for producing the silicon-containing thin film according to one embodiment may include: a) maintaining the temperature of a substrate mounted in a chamber at 100°C or higher; b) contacting the substrate with a fluoroaminosilane compound represented by chemical formula 1 or a silicon-containing thin film deposition composition containing the same, and allowing it to be adsorbed onto the substrate; and c) injecting a reaction gas into the substrate on which the fluoroaminosilane compound or silicon-containing thin film deposition composition has been adsorbed to form a silicon-containing thin film.

[0025] The above manufacturing method may be carried out by atomic layer deposition (ALD), chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), low-pressure chemical vapor deposition (LPCVD), plasma chemical vapor deposition (PECVD), or plasma atomic layer deposition (PEALD).

[0026] The reaction gas may include oxygen (O2), ozone (O3), oxygen plasma, hydrogen (H2), hydrogen plasma, water (H2O), hydrogen peroxide (H2O2), nitrogen dioxide (NO2), nitric oxide (NO), nitrous oxide (N2O), ammonia (NH3), carbon dioxide (CO2), formic acid (HCOOH), acetic acid (CH3COOH), acetic anhydride ((CH3CO)2O), or a combination thereof.

[0027] The silicon-containing thin film may be a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a silicon carbide film, a silicon fluoride oxide film, a silicon fluoride carbide film, a silicon fluoride carbonitride film, or a silicon fluoride oxynitride film. The silicon-containing thin film may have a dielectric constant of 3.0 or less.

[0028] Yet another aspect of the present invention provides a fluoroaminosilane compound represented by the following chemical formula 1.

[0029] [Chemical formula 1] TIFF2026519946000008.tif19170

[0030] (In the above chemical formula 1, A is hydrogen, (C1-C7) alkyl, fluoro, fluoro(C1-C7) alkyl, or NR a R b And, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR a R b And, R a and R b Each of these is independently either hydrogen or a (C1-C7) alkyl group. R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R12 )(R 13 ) and R 11 It is fluoro, R 12 and R 13 These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0031] The fluoroaminosilane compound according to one embodiment may be represented by the following chemical formula 2.

[0032] [Chemical formula 2] TIFF2026519946000009.tif19170

[0033] (In the above chemical formula 2, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR a R b And, R a and R b Each of these is independently either hydrogen or a (C1-C7) alkyl group. R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 It is fluoro, R 12 and R 13 These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0034] The fluoroaminosilane compound according to one embodiment may be represented by the following chemical formula 3.

[0035] [Chemical formula 3] TIFF2026519946000010.tif19170

[0036] (In the above chemical formula 3, R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 It is fluoro, R 12 and R 13 These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl. [Effects of the Invention]

[0037] A silicon-containing thin film deposition composition according to one aspect of the present invention is easy to store and handle, enables thin film deposition with a high thin film deposition rate, and allows for the production of high-quality, low-dielectric silicon-containing thin films with high purity through a simple manufacturing process.

[0038] Furthermore, the silicon-containing thin film according to one embodiment is expected to be usefully applicable as an insulating film for semiconductor devices, particularly as a spacer in semiconductor miniaturization processes, because it not only has excellent chemical and thermal stability but also a sufficiently low dielectric constant. [Brief explanation of the drawing]

[0039] [Figure 1] These are the TGA and DSC analysis results for the difluoro(diisopropyl)aminosilane produced in Example 1. [Figure 2] This shows the results of the component analysis of the silicon-containing thin film produced in Example 6. [Modes for carrying out the invention]

[0040] In this specification, unless otherwise defined, all technical and scientific terms have the same meaning as those generally understood by those skilled in the art in which the present invention pertains. The terms used in this specification are merely for the effective description of specific examples and are not intended to limit the present invention.

[0041] As used herein, the singular form may also include the plural form unless otherwise indicated by the context. Furthermore, the numerical ranges used herein include lower and upper limits, all values ​​within that range, increments logically derived from the form and width of the defined range, all limited values ​​among them, and all possible combinations of upper and lower limits of numerical ranges limited to different forms. Unless otherwise defined herein, values ​​outside the numerical range that may occur due to experimental error or rounding of values ​​are also included in the defined numerical range.

[0042] The term "includes" as used herein is an open-ended statement equivalent to expressions such as "provides," "contains," "has," or "characterizes," and does not exclude any elements, materials, or processes not additionally listed.

[0043] As used herein, the term "alkyl" refers to an organic radical derived from an aliphatic hydrocarbon by the removal of one hydrogen atom, and may include all linear or branched alkyl groups. The alkyl group may have 1 to 7 carbon atoms, more specifically 1 to 5, and more specifically 1 to 4 carbon atoms. As an example, the linear alkyl group includes methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, and n-heptyl, and the branched alkyl group includes, but is not limited to, isopropyl, sec-butyl, isobutyl, tert-butyl, isopentyl, 2-methylhexyl, 3-methylbutyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 4-methylhexyl, 5-methylhexyl, 2,3-dimethylbutyl, 2,3-dimethylpentyl, and 2,4-dimethylpentyl.

[0044] In this specification, the term "alkenyl" means a linear or branched unsaturated hydrocarbon radical containing one or more double bonds, and the term "alkynyl" means a linear or branched unsaturated hydrocarbon radical containing one or more triple bonds. The present invention will be described in detail below.

[0045] A silicon-containing thin film deposition composition according to one aspect of the present invention can provide a high-quality low-dielectric silicon-containing thin film by containing a precursor compound with a specific structure.

[0046] Specifically, the precursor compound according to one embodiment may be a fluoroaminosilane compound represented by the following chemical formula 1.

[0047] [Chemical formula 1] TIFF2026519946000011.tif19170

[0048] (In the above chemical formula 1, A is hydrogen, (C1-C7) alkyl, fluoro, fluoro(C1-C7) alkyl, or NR aR b And, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR a R b And, R a and R b Each of these is independently either hydrogen or a (C1-C7) alkyl group. R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 It is fluoro, R 12 and R 13 These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0049] The fluoroaminosilane compound represented by chemical formula 1 has the above-mentioned structural features, for example, having a Si-N bond and at least one Si-F bond simultaneously, which allows for the easy formation of a high-purity silicon-containing thin film with a high deposition rate. The silicon-containing thin film can further contain fluorine (F), achieving an even lower dielectric constant. Preferably, the silicon-containing thin film deposition composition according to one embodiment may be a fluorine and silicon-containing thin film deposition composition, and the thin film produced using it has a low dielectric constant and can be used as an insulating film material for semiconductor devices. Furthermore, the thin film can be used as a deposition suppression layer material, in which case the fluoroaminosilane compound according to one embodiment can play the role of an inhibitor.

[0050] Specifically, in the above chemical formula 1, A is hydrogen, (C1-C4) alkyl, fluoro, fluoro(C1-C4) alkyl, or NR a R band R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, fluoro, fluoro(C1-C4)alkyl, fluoro(C2-C4)alkenyl, fluoro(C2-C4)alkynyl, or NR a R b and R a and R b are each independently hydrogen or (C1-C4)alkyl, R1 is (C1-C4)alkyl, R2 is (C1-C4)alkyl or -Si(R 11 )(R 12 )(R 13 ), R 11 is fluoro, and R 12 and R 13 may each independently be hydrogen, (C1-C4)alkyl, fluoro, or fluoro(C1-C4)alkyl.

[0051] Specifically, in Chemical Formula 1, A is fluoro or (C1-C4)alkyl, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, or fluoro, R1 is branched (C3-C7)alkyl, R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ), R 11 is fluoro, and R 12 and R 13 may each independently be hydrogen or (C1-C4)alkyl.

[0052] As an example, in Chemical Formula 1, A may be fluoro or methyl. As an example, in Chemical Formula 1, A is fluoro, R is hydrogen, (C1-C3)alkyl, (C2-C3)alkenyl, or fluoro, R1 is branched (C3-C5)alkyl, R2 is branched (C3-C5)alkyl or -Si(R 11 )(R 12 )(R 13 ), R 11 is fluoro, and R 12and R 13 Each of these elements may independently be hydrogen or a (C1-C3) alkyl group.

[0053] The fluoroaminosilane compound represented by the aforementioned chemical formula 1 may, for example, be represented by the following chemical formula 2, and can provide a thin film with a lower dielectric constant.

[0054] [Chemical formula 2] TIFF2026519946000012.tif19170

[0055] (In the above chemical formula 2, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR a R b And, R a and R b Each of these is independently either hydrogen or a (C1-C7) alkyl group. R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 It is fluoro, R 12 and R 13 These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0056] As an example, in the above chemical formula 2, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, fluoro, fluoro(C1-C4)alkyl, fluoro(C2-C4)alkenyl, fluoro(C2-C4)alkynyl, or NR a R b And R a and R bEach of these is independently hydrogen or (C1-C4) alkyl, where R1 is (C1-C4) alkyl and R2 is (C1-C4) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 is fluoro, and R 12 and R 13 Each of these may independently be hydrogen, (C1-C4)alkyl, fluoro, or fluoro(C1-C4)alkyl.

[0057] For example, in the above chemical formula 2, R is hydrogen, (C1-C4) alkyl, (C2-C4) alkenyl, or fluoro, R1 is a branched (C3-C7) alkyl, and R2 is a branched (C3-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 is fluoro, and R 12 and R 13 Each of these elements may independently be hydrogen or a (C1-C4) alkyl group.

[0058] For example, in the above chemical formula 2, R is hydrogen, (C1-C3) alkyl, (C2-C3) alkenyl, or fluoro, and R1 and R2 are the same and may be branched (C3-C7) alkyl, more specifically, R1 and R2 are the same and may be branched (C3-C5) alkyl.

[0059] The fluoroaminosilane compound in one embodiment may be selected from, but is not limited to, the following compounds. TIFF2026519946000013.tif170170

[0060] A silicon-containing thin film deposition composition according to one embodiment always contains a fluoroaminosilane compound represented by chemical formula 1 as a precursor for thin film deposition, and the content of the compound represented by chemical formula 1 in the composition may be within a range that can be recognized by a person skilled in the art, taking into consideration the thin film deposition conditions or the thickness of the thin film, the characteristics of the thin film, the application of the thin film, etc.

[0061] Furthermore, one aspect of the present invention provides a method for producing a silicon-containing thin film using a fluoroaminosilane compound represented by chemical formula 1 or a silicon-containing thin film deposition composition containing the same, and a silicon-containing thin film produced using the same.

[0062] A method for producing a silicon-containing thin film according to one embodiment involves using a composition containing a fluoroaminosilane compound represented by the chemical formula 1 as a precursor, which allows for the production of a high-quality silicon-containing thin film with a high deposition rate, and preferably, a fluorine and silicon-containing thin film can be produced.

[0063] Specifically, in one embodiment, a method for producing a silicon-containing thin film allows the fluorine (F) of the fluoroaminosilane compound represented by chemical formula 1 to remain in the thin film, thereby providing a high-quality fluorine and silicon-containing thin film.

[0064] A silicon-containing thin film according to one embodiment can be any thin film that can be manufactured within the range recognizable to a person skilled in the art, and specifically, it may be silicon oxide (SiO2), silicon nitride (SiN), silicon carbonitride (SiCN), silicon carbide (SiC), silicon fluoride oxide (SiOF), silicon fluoride carbide (SiCF), silicon fluoride carbonitride (SiCNF), silicon fluoride oxynitride (SiONF), and various other high-quality thin films containing silicon, or fluorine and silicon, within the range recognizable to a person skilled in the art can be manufactured.

[0065] The silicon-containing thin film according to one embodiment exhibits excellent chemical and thermal stability, making it suitable for various applications, such as insulating films, diffusion-blocking films, spacers, intermetallic dielectric materials, and protective film layers in the fabrication of electronic devices. Furthermore, the silicon-containing thin film according to one embodiment can be used as a deposition suppression layer, in which case the fluoroaminosilane compound according to one embodiment can act as an inhibitor.

[0066] In a method for manufacturing a silicon-containing thin film according to one embodiment, the method for depositing the thin film is not particularly limited as long as it is commonly used in the art, but for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD) may be used, and more specifically, atomic layer deposition (ALD) or plasma-enhanced atomic layer deposition (PEALD) may be used, but is not limited thereto.

[0067] Specifically, a method for manufacturing a silicon-containing thin film according to one embodiment is: a) A step of maintaining the temperature of the substrate installed inside the chamber at 100°C or higher, b) A step of contacting a substrate with a fluoroaminosilane compound according to one aspect of the present invention or a silicon-containing thin film deposition composition containing the same, and allowing it to be adsorbed onto the substrate, c) The step of injecting a reaction gas into a substrate on which the fluoroaminosilane compound or silicon-containing thin film deposition composition is adsorbed to form a silicon-containing thin film may be included.

[0068] More specifically, the method for manufacturing the silicon-containing thin film is as follows: a) A step of maintaining the temperature of the substrate installed inside the chamber at 100°C or higher, b) A step of contacting a substrate with a fluoroaminosilane compound according to one aspect of the present invention or a silicon-containing thin film deposition composition containing the same, and allowing it to be adsorbed onto the substrate, c) A step of purging residual vapor deposition composition and by-products, d) A step of injecting a reaction gas into a substrate on which the silicon-containing thin film deposition composition is adsorbed to form a silicon-containing thin film, e) The step of purging residual reaction gases and by-products may be included.

[0069] The substrate is not particularly limited as long as it is commonly used in the field, but may be, for example, a substrate containing one or more semiconductor materials from among Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC, InAs, and InP, an SOI (Silicon On Insulator) substrate, a quartz substrate, or a display glass substrate, or a flexible plastic substrate such as polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), polycarbonate (PC), polyethersulfone (PES), or polyester.

[0070] Furthermore, in addition to directly forming the silicon-containing thin film on the substrate, multiple conductive layers, dielectric layers, or insulating layers may be further formed between the substrate and the silicon-containing thin film.

[0071] For example, the temperature of the substrate may be adjusted to 100-800°C, 300-800°C, or 400-700°C. Under these temperature conditions, the fluorine (F) of the fluoroaminosilane compound represented by chemical formula 1 can be retained in the thin film, providing a high-quality fluorine and silicon-containing thin film and a thin film with a lower dielectric constant.

[0072] For example, the reaction gas may be supplied after being activated by generating a plasma at 50-1,000 W, 100-800 W, or 400-600 W.

[0073] The type of reaction gas is not particularly limited as long as it is commonly used in the field, but may include, for example, oxygen (O2), ozone (O3), oxygen plasma, hydrogen (H2), hydrogen plasma, water (H2O), hydrogen peroxide (H2O2), nitrogen dioxide (NO2), nitric oxide (NO), nitrous oxide (N2O), ammonia (NH3), carbon dioxide (CO2), formic acid (HCOOH), acetic acid (CH3COOH), acetic anhydride ((CH3CO)2O), or a combination thereof. The purging gas may be nitrogen (N2), argon (Ar), helium (He), or a combination thereof.

[0074] In one embodiment of the method for manufacturing a silicon-containing thin film, the deposition conditions may be adjusted according to the structure or thermal properties of the target thin film. Examples of deposition conditions in one embodiment include the flow rate of the silicon-containing thin film deposition composition containing the compound of chemical formula 1, the flow rates of the reaction gas and carrier gas, pressure, RF power, and substrate temperature. For example, the flow rate of the silicon-containing thin film deposition composition is 10 to 1000 cc / min, the carrier gas is 10 to 1000 cc / min, the reaction gas flow rate is 1 to 3000 cc / min, the pressure is 0.5 to 10 torr, and the RF power and substrate temperature are as described above, but are not limited thereto.

[0075] Furthermore, one aspect of the present invention provides a novel compound that can be used as a precursor for silicon-containing thin films. Specifically, the novel compound may be a fluoroaminosilane compound represented by the following chemical formula 1.

[0076] [Chemical formula 1] TIFF2026519946000014.tif19170

[0077] (In the above chemical formula 1, A is hydrogen, (C1-C7) alkyl, fluoro, fluoro(C1-C7) alkyl, or NR a R b And, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR a R b And, R a and R b Each of these is independently either hydrogen or a (C1-C7) alkyl group. R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 It is fluoro, R 12 and R 13 These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0078] The fluoroaminosilane compound represented by chemical formula 1, having the structural characteristics described above, such as simultaneously possessing Si-N bonds and at least one Si-F bond, can easily form high-purity silicon-containing thin films with a high deposition rate. Furthermore, a thin film produced from a silicon-containing thin film deposition composition according to one embodiment has a low dielectric constant and can therefore be used as an insulating film material for semiconductor devices.

[0079] Specifically, in the above chemical formula 1, A is hydrogen, (C1-C4) alkyl, fluoro, fluoro(C1-C4) alkyl, or NR a R b R is hydrogen, (C1-C4) alkyl, (C2-C4) alkenyl, (C2-C4) alkynyl, fluoro, fluoro(C1-C4) alkyl, fluoro(C2-C4) alkenyl, fluoro(C2-C4) alkynyl, or NR a R b And R a and R b Each of these is independently hydrogen or (C1-C4) alkyl, where R1 is (C1-C4) alkyl and R2 is (C1-C4) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 is fluoro, and R 12 and R 13 Each of these may independently be hydrogen, (C1-C4)alkyl, fluoro, or fluoro(C1-C4)alkyl.

[0080] For example, in the above chemical formula 1, A may be fluoro or methyl. For example, in the above chemical formula 1, A is fluoro, R is hydrogen, (C1-C4) alkyl, (C2-C4) alkenyl, or fluoro, R1 is a branched (C3-C7) alkyl, and R2 is a branched (C3-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 is fluoro, and R 12 and R13 Each of these elements may independently be hydrogen or a (C1-C4) alkyl group.

[0081] For example, in the above chemical formula 1, A is fluoro, R is hydrogen, (C1-C3) alkyl, (C2-C3) alkenyl, or fluoro, R1 is a branched (C3-C5) alkyl, and R2 is a branched (C3-C5) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 is fluoro, and R 12 and R 13 Each of these elements may independently be hydrogen or a (C1-C3) alkyl group.

[0082] The fluoroaminosilane compound represented by the aforementioned chemical formula 1 may, for example, be represented by the following chemical formula 2, and can provide a thin film with a lower dielectric constant.

[0083] [Chemical formula 2] TIFF2026519946000015.tif19170

[0084] (In the above chemical formula 2, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR a R b And, R a and R b Each of these is independently either hydrogen or a (C1-C7) alkyl group. R1 is an (C1-C7) alkyl group. R2 is (C1-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 It is fluoro, R 12 and R 13These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0085] As an example, in the above chemical formula 2, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, fluoro, fluoro(C1-C4)alkyl, fluoro(C2-C4)alkenyl, fluoro(C2-C4)alkynyl, or NR a R b And R a and R b Each of these is independently hydrogen or (C1-C4) alkyl, R1 is a branched (C3-C7) alkyl, and R2 is a branched (C3-C7) alkyl or -Si(R 11 )(R 12 )(R 13 ) and R 11 is fluoro, and R 12 and R 13 Each of these may independently be hydrogen, (C1-C4)alkyl, fluoro, or fluoro(C1-C4)alkyl.

[0086] For example, in the above chemical formula 2, R is hydrogen, (C1-C3) alkyl, (C2-C3) alkenyl, or fluoro, and R1 and R2 are the same and may be branched (C3-C7) alkyl, more specifically, R1 and R2 are the same and may be branched (C3-C5) alkyl.

[0087] The fluoroaminosilane compound in one embodiment may be selected from, but is not limited to, the following compounds. TIFF2026519946000016.tif170170

[0088] The following describes in detail a method for producing the fluoroaminosilane compound represented by chemical formula 1 according to one embodiment. However, it goes without saying that synthesis by other methods that are generally recognizable to those skilled in the art is also possible, and the organic solvent used is not limited, and the reaction time and temperature can also be changed within the scope that does not deviate from the core of the present invention.

[0089] A method for producing the fluoroaminosilane compound according to one embodiment may include the steps of (A) reacting a compound represented by the following chemical formula 11 with a compound represented by chemical formula 12 to produce a compound represented by the following chemical formula 13, and (B) reacting a compound represented by the following chemical formula 13 with a fluoride source to produce a fluoroaminosilane compound of chemical formula 1.

[0090] [Chemical formula 11] TIFF2026519946000017.tif15170

[0091] [Chemical formula 12] TIFF2026519946000018.tif14170

[0092] [Chemical formula 13] TIFF2026519946000019.tif15170

[0093] (Among the above chemical formulas 11-13, A' is Cl, hydrogen, (C1-C7)alkyl, fluoro(C1-C7)alkyl, or NR1R2. R' is Cl, hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR1R2. R1 and R2 are defined as in the above chemical formula 1.

[0094] Step (A) may be carried out at 0 to 30°C for 1 to 10 hours, specifically at 10 to 30°C for 1 to 5 hours, but is not limited to this and can be modified depending on the type and amount of reactants and solvent used.

[0095] Step (B) may be carried out by providing a fluoride source, which may be selected from, but is not limited to, alkali metal fluorides such as LiF, KF, NaF, RbF, and CsF, or transition metal fluorides such as AgF, AgF2, ZnF2, CuF2, CuF2·H2O, NiF2, SnF2, InF3, ScF3, TiF3, MnF3, CoF3, CrF3, AuF3, FeF3, MnF3, BiF3, and SbF3.

[0096] Furthermore, step (B) may be carried out at 0 to 30°C for 1 to 10 hours, specifically at 10 to 30°C for 1 to 5 hours, but is not limited to this and can be modified depending on the type and amount of reactants and solvent used.

[0097] The embodiments described above will be explained in more detail below with reference to examples. However, the following examples are for illustrative purposes only and do not limit the scope of rights. The physical properties of the examples were measured as follows.

[0098] 1) Thickness The thickness of fluorine and silicon-containing thin films was measured using an ellipsometer (OPTI-PROBE 2600, THERMA-WAVE).

[0099] 2) Thermal properties Thermogravimetric analysis (TGA, L81-II, LINSEIS) and differential scanning calorimeter (DSC) were performed to measure the thermal stability, volatility, and decomposition temperature of fluoroaminosilane compounds.

[0100] <Synthesis of fluoroaminosilane compounds> [Example 1] Synthesis of Difluoro(diisopropyl)aminosilane

[0101] TIFF2026519946000020.tif27170

[0102] Next, 200 g (1.48 mol) of trichlorosilane and 1018 g (11.81 mol) of n-hexane were added, and the mixture was cooled to below -20°C while stirring. While maintaining the internal temperature at -10 to 0°C, 329 g (3.25 mol) of diisopropylamine was gradually added. After the addition of diisopropylamine was completed, the temperature was gradually raised to room temperature, and the reaction was completed after stirring at room temperature for 3 hours. After filtering the reaction mixture, the remaining filtrate was removed by vacuum distillation to obtain 250 g (85% yield, 1.26 mol) of dichloro(diisopropyl)aminosilane (compound 1-(a)) as the target product.

[0103] In a 2 L flame-dried flask under anhydrous and inert atmosphere, 114 g (3.12 mol) of lithium fluoride (LiF) and 838 g (6.24 mol) of diethyleneglycol dimethyl ether (DEGDME) were added, and 250 g (1.26 mol) of previously prepared dichloro(diisopropyl)aminosilane was gradually added at room temperature. After the addition was complete, the mixture was stirred at room temperature for 3 hours to complete the reaction. After filtering the reaction mixture, the filtrate was distilled under reduced pressure at 34-36°C at 30 torr to obtain 157 g (0.94 mol) of the target compound, difluoro(diisopropyl)aminosilane (compound 1, Difluoro-di-iso-propylaminosilane) (yield 75%, GC purity 98.5%).

[0104] 1H-NMR(C6D6): 0.97ppm(d, 12H, Si-N(CH(CH3)2)2), 2.92ppm(m, 2H, Si-N((CH)(CH3)2)2)), 4.56ppm(t, 1H, Si-H) 29 Si-NMR(C6D6): -50.87ppm(t, 1Si)

[0105] [Example 2] Synthesis of difluoro(diisopropyl)aminomethylsilane

[0106] TIFF2026519946000021.tif27170

[0107] In a flame-dried 2 L flask under anhydrous and inert atmosphere, after setting up a reflux apparatus, 200 g (1.34 mol) of trichloromethylsilane and 1153 g (13.38 mol) of n-hexane were added, and the mixture was cooled to below -20°C while stirring. While maintaining the internal temperature at -10 to 0°C, 298 g (2.94 mol) of diisopropylamine was gradually added. After the addition of diisopropylamine was completed, the temperature was gradually raised to room temperature, and the reaction was completed after stirring at room temperature for 3 hours. After filtering the reaction mixture, the solvent was removed from the remaining filtrate under reduced pressure to obtain 229 g (80% yield, 1.07 mol) of dichloro(diisopropyl)aminomethylsilane (compound 2-(a)).

[0108] In a 2 L flask, flame-dried under anhydrous and inert atmosphere, 305 g (1.71 mol) of antimony(III) fluoride (SbF3) and 764 g (5.70 mol) of diethyleneglycol dimethyl ether (DEGDME) were added, and 210 g (0.93 mol) of previously prepared dichloro(diisopropyl)aminomethylsilane was gradually added. After the addition was complete, the mixture was stirred at room temperature for 1 hour to complete the reaction. The filtrate of the reaction mixture was filtered and distilled under reduced pressure at 44°C at 30 torr to obtain 155 g (0.85 mol) of the target compound, difluoro(diisopropyl)aminomethylsilane (compound 2, Difluoro-di-iso-propylaminomethylsilane) (yield 75%, GC purity 98%).

[0109] 1 H-NMR(C6D6): 0.19ppm(s, 3H, Si-CH3), 1.06ppm(d, 12H, Si-N(CH(CH3)2))2, 3.05ppm(m, 2H, Si-N((CH)(CH3)2))2)

[0110] [Example 3] Synthesis of difluoro(diisopropyl)aminovinylsilane

[0111] TIFF2026519946000022.tif27170

[0112] In a flame-dried 2 L flask under an anhydrous and inert atmosphere, after setting up a reflux apparatus, 200 g (1.24 mol) of trichlorovinylsilane and 1067 g (12.38 mol) of n-hexane were added, and the mixture was cooled to below -20°C while stirring. While maintaining the internal temperature at -10 to 0°C, 276 g (2.72 mol) of diisopropylamine was gradually added. After the addition of diisopropylamine was complete, the temperature was gradually raised to room temperature, and the reaction was completed by stirring at room temperature for 6 hours. After filtering the reaction mixture, the solvent was removed from the filtrate under reduced pressure to obtain 210 g (75% yield, 0.93 mol) of dichloro(diisopropyl)aminovinylsilane (compound 3-(a)).

[0113] In a flame-dried 2 L flask under anhydrous and inert atmosphere, 249 g (1.39 mol) of SbF3 and 623 g (4.64 mol) of diethylene glycol dimethyl ether (DEGDME) were added, and 210 g (0.93 mol) of previously prepared dichloro(diisopropyl)aminovinylsilane was gradually added at room temperature. After the addition was complete, the mixture was stirred at room temperature for 1 hour to complete the reaction. The filtrate of the reaction mixture was filtered and distilled under reduced pressure at 56°C at 30 torr to obtain 131 g (0.65 mol) of the target compound, difluoro(diisopropyl)aminovinylsilane (compound 3, Difluoro-di-iso-propylaminovinylsilane) (yield 70%, GC purity 95%).

[0114] 1 H-NMR(C6D6): 1.03ppm(d, 12H, Si-N(CH(CH3)2))2, 3.15ppm(m, 2H, Si-N((CH)(CH3)2))2), 5.8~6.1ppm(m, 3H, Si-CH=CH2)

[0115] [Example 4] Synthesis of Trifluoro(diisopropyl)aminosilane

[0116] TIFF2026519946000023.tif27170

[0117] In a 10 L flask, flame-dried under anhydrous and inert atmosphere, 514.0 g (3.03 mol) of tetrachlorosilane and 3710.0 g (51.43 mol) of pentane were added. 673.5 g (6.66 mol) of diisopropylamine was gradually added at room temperature, and the mixture was stirred for 5 hours. After the reaction was complete, the reaction mixture was filtered to remove diisopropylamine hydrochloride, and then the solvent was removed at 60°C at 6 torr to produce 638.9 g (90.0% yield) of trichloro(diisopropyl)aminosilane (compound 4-(a)).

[0118] In a flame-dried 3 L flask under anhydrous and inert atmosphere, 636.5 g (2.71 mol) of the previously prepared trichloro(diisopropyl)aminosilane and 1194.0 g (8.90 mol) of diethyleneglycoldimethyl ether were added and the mixture was stirred. While maintaining the reactor temperature at 20-50°C, 727.4 g (4.07 mol) of antimony(III) fluoride was added. The solvent was removed at 30°C at 26 torr, and the mixture was purified at 110°C at 760 torr to produce 261.3 g (52.0% yield) of trifluoro(diisopropyl)aminosilane (compound 4).

[0119] 1 H NMR(C6D6): 0.98ppm(d, 12H, N-(CH-(CH3)2)2), 2.96ppm(m, 2H, N-(CH-(CH3)2)2) 13 C NMR(C6D6): 46.62ppm(s, 2C, N-(CH-(CH3)2)2), 23.44ppm(s, 4C, N-(CH-(CH3)2)2) 29 Si NMR(C6D6): -83.22ppm(q, 1Si)

[0120] [Example 5] Synthesis of Trifluoro(diisopropyl)aminosilane In a 10 L flask, flame-dried under anhydrous and inert atmosphere, 427.0 g (3.15 mol) of trichlorosilane and 3866.60 g (53.59 mol) of pentane were added. 701.8 g (6.94 mol) of diisopropylamine was gradually added at room temperature, and the mixture was stirred for 5 hours. After the reaction was complete, the reaction mixture was filtered to remove diisopropylamine hydrochloride, then filtered again, and the solvent was removed at 60°C at 10 torr to produce 568.0 g of dichloro(diisopropyl)aminosilane (yield 90.0%).

[0121] In a flame-dried 3 L flask under anhydrous and inert atmosphere, 567.0 g (2.83 mol) of previously prepared dichloro(diisopropyl)aminosilane and 912.0 g (6.80 mol) of diethyleneglycoldimethyl ether were added and stirred. While maintaining the temperature at 20-50°C, 759.5 g (4.25 mol) of antimony(III) fluoride was added. The solvent was removed at 30°C at 26 torr, and the mixture was purified at 110°C at 760 torr to produce 135.0 g of trifluoro(diisopropyl)aminosilane (yield 25.7%).

[0122] 1 H NMR(in C6D6): 0.98ppm(d, 12H, N-(CH-(CH3)2)2), 2.96ppm(m, 2H, N-(CH-(CH3)2)2) 13 C NMR(in C6D6): 46.62ppm(s, 2C, N-(CH-(CH3)2)2), 23.44ppm(s, 4C, N-(CH-(CH3)2)2) 29 Si NMR(in C6D6): -83.22ppm(q, 1Si)

[0123] Figure 1 shows the thermogravimetric (TGA) and differential scanning calorimetry (DSC) analysis results for the difluoro(diisopropyl)aminosilane produced in Example 1. Referring to Figure 1, it can be seen that the compound in Example 1 has a single evaporation stage at approximately 100°C, exhibits a very low residual mass and rapid vaporization characteristics, and vaporizes almost completely without thermal decomposition. Furthermore, the DSC graph shows that the fluoroaminosilane compound in Example 1 has excellent thermal stability.

[0124] <Deposition of fluorine and silicon-containing thin films> [Example 6] Fluorine and silicon-containing thin films were fabricated using a known atomic layer deposition (ALD) method. The compound fabricated in Example 1 was used as the precursor, and oxygen was used as the reaction gas.

[0125] A silicon substrate was used as the substrate on which the fluorine and silicon-containing thin films were formed. The silicon substrate was transferred into a deposition chamber and maintained at a constant temperature as shown in Table 1 below.

[0126] The vaporized precursor was transferred into the chamber using argon gas as a carrier gas and adsorbed onto the silicon substrate. A purging process was then performed using argon gas. The reaction process was carried out using oxygen as the reaction gas. Furthermore, a purging process was performed using argon gas to remove reaction byproducts. The above atomic layer deposition process constituted one cycle, and a fixed cycle was repeated to form fluorine and silicon-containing thin films. Detailed evaluation conditions and results are shown in Table 1.

[0127] [Table 1]

[0128] [Example 7] Fluorine and silicon-containing thin films were produced using a known chemical vapor deposition (CVD) method. The compound produced in Example 1 was used as the precursor, and oxygen, hydrogen, ammonia, and water were used as the reaction gases.

[0129] A silicon substrate was used as the substrate on which the fluorine and silicon-containing thin films were formed. The silicon substrate was transferred into a deposition chamber and maintained at a constant temperature as shown in Table 2 below.

[0130] The vaporized precursor was transported into the chamber using argon gas as a carrier gas, while the reaction process was carried out with the reaction gases oxygen, hydrogen, ammonia, and water, and the precursor was adsorbed onto the silicon substrate. Subsequently, a purging process was performed using argon gas to remove the reaction byproducts. Chemical vapor deposition as described above was carried out for 5 minutes to form a fluorine and silicon-containing thin film. Detailed evaluation conditions and results are shown in Table 2.

[0131] [Table 2]

[0132] [Example 8] Fluorine and silicon-containing thin films were fabricated using a known atomic layer deposition (ALD) method. The compounds fabricated in Example 1 and HCDS (hexachlorodisilane, Si2Cl6) compounds were used as precursors, and oxygen and ammonia were used as reaction gases.

[0133] A silicon substrate was used as the substrate on which the silicon-containing thin film was formed. The silicon substrate was transferred into the deposition chamber and maintained at a constant temperature of 630°C. The two vaporized precursors were simultaneously transferred into the chamber using argon gas as a carrier gas, adsorbed onto a silicon substrate, and then purged using argon gas. Subsequently, the reaction process was carried out using oxygen, the first reaction gas, and purged using argon gas. Then, the reaction process was carried out using ammonia, the second reaction gas, and purged using argon gas to remove reaction byproducts. The above atomic layer deposition process constituted one cycle, and fluorine and silicon-containing thin films were formed by repeating a certain number of cycles. Detailed evaluation conditions and results are shown in Table 3.

[0134] [Table 3]

[0135] When evaluating ALD (Advanced Laser Development) by deposition of a mixed precursor of HCDS and the compound from Example 1, as analyzed using an X-ray photoelectron spectrometer, the composition of the thin film is shown in Figure 2, and the atomic content values ​​within the thin film are summarized in Table 4 below. As a result, it was confirmed that fluorine-containing silicon oxide (SiOF) was formed, and the Cl content within the thin film was confirmed to be less than 1% as a surface impurity.

[0136] [Table 4]

Claims

1. A silicon-containing thin film deposition composition comprising a fluoroaminosilane compound represented by the following chemical formula 1. [Chemical formula 1] In the aforementioned chemical formula 1, A is hydrogen, (C1-C7) alkyl, fluoro, fluoro(C1-C7) alkyl, or NR ａ R ｂ And, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR ａ R ｂ And, R ａ and R ｂ Each of these is independently hydrogen or (C1-C7) alkyl, R １ It is a (C1-C7) alkyl group, R ２ is (C1-C7)alkyl or -Si(R １１ )(R １２ )(R １３ ) and R １１ It is fluoro, R １２ and R １３ These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

2. A is fluoro or (C1-C4) alkyl, R is hydrogen, (C1-C4) alkyl, (C2-C4) alkenyl, or fluoro. R １ It is a branched (C3-C7) alkyl group, R ２ is a branched (C3-C7) alkyl or -Si(R １１ ) (Caution １２ ) (Caution １３ ) and R １１ It is fluoro, R １２ and R １３ The silicon-containing thin film deposition composition according to claim 1, wherein each is independently hydrogen or (C1-C4) alkyl.

3. The silicon-containing thin film deposition composition according to claim 1, wherein A is fluoro or methyl.

4. The fluoroaminosilane compound is represented by the following chemical formula 2, and is a silicon-containing thin film deposition composition according to claim 1. [Chemical formula 2] In the aforementioned chemical formula 2, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR ａ R ｂ And, R ａ and R ｂ Each of these is independently hydrogen or (C1-C7) alkyl, R １ It is a (C1-C7) alkyl group, R ２ (C1-C7) alkyl or -Si(R １１ ) (Caution １２ ) (Caution １３ ) and R １１ It is fluoro, R １２ and R １３ These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

5. R is hydrogen, (C1-C4) alkyl, (C2-C4) alkenyl, or fluoro. R １ It is a branched (C3-C7) alkyl group, R ２ is a branched (C3-C7) alkyl or -Si(R １１ ) (Caution １２ ) (Caution １３ ) and R １１ It is fluoro, R １２ and R １３ The silicon-containing thin film deposition composition according to claim 4, wherein each is independently hydrogen or (C1-C4) alkyl.

6. The fluoroaminosilane compound is represented by the following chemical formula 3, and is a silicon-containing thin film deposition composition according to claim 1. [Chemical formula 3] In the aforementioned chemical formula 3, R １ It is a (C1-C7) alkyl group, R ２ (C1-C7) alkyl or -Si(R １１ ) (Caution １２ ) (Caution １３ ) and R １１ It is fluoro, R １２ and R １３ These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

7. R １ It is a branched (C3-C7) alkyl group, R ２ is a branched (C3-C7) alkyl or -Si(R １１ ) (Caution １２ ) (Caution １３ ) and R １１ It is fluoro, R １２ and R １３ The silicon-containing thin film deposition composition according to claim 6, wherein each is independently hydrogen or (C1-C4) alkyl.

8. The silicon-containing thin film deposition composition according to claim 1, wherein the fluoroaminosilane compound is selected from the following compounds.

9. A silicon-containing thin film produced from a fluoroaminosilane compound represented by the following chemical formula 1 or a silicon-containing thin film deposition composition containing the same. [Chemical formula 1] In the aforementioned chemical formula 1, A, R, R １ , and R ２ This is the same as the definition in claim 1.

10. The silicon-containing thin film according to claim 9, further containing fluorine.

11. A method for producing a silicon-containing thin film, using a fluoroaminosilane compound represented by the following chemical formula 1 or a silicon-containing thin film deposition composition containing the same. [Chemical formula 1] In the aforementioned chemical formula 1, A, R, R １ , and R ２ This is the same as the definition in claim 1.

12. a) A step of maintaining the temperature of the substrate installed in the chamber at 100°C or higher, b) The step of contacting the substrate with a fluoroaminosilane compound represented by chemical formula 1 or a silicon-containing thin film deposition composition containing the same, and allowing it to be adsorbed onto the substrate, c) A method for producing a silicon-containing thin film according to claim 11, comprising the step of injecting a reaction gas into a substrate on which the fluoroaminosilane compound or the silicon-containing thin film deposition composition is adsorbed to form a silicon-containing thin film.

13. A method for producing a silicon-containing thin film according to claim 11, carried out by atomic layer deposition (ALD), chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), low-pressure chemical vapor deposition (LPCVD), plasma chemical vapor deposition (PECVD), or plasma atomic layer deposition (PEALD).

14. The reaction gas is oxygen (O ２ ), ozone (O ３ ), oxygen plasma, hydrogen (H ２ ), hydrogen plasma, water (H ２ O), hydrogen peroxide (H ２ O ２ ), nitrogen dioxide (NO ２ ), nitric oxide (NO), nitrous oxide (N ２ O), ammonia (NH ３ ), carbon dioxide (CO2) ２ ), formic acid (HCOOH), acetic acid (CH ３ COOH), acetic anhydride ((CH ３ CO) ２ A method for producing a silicon-containing thin film according to claim 12, comprising O), or a combination thereof.

15. The method for producing a silicon-containing thin film according to claim 11, wherein the silicon-containing thin film is a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a silicon carbide film, a silicon fluoride oxide film, a silicon fluoride carbide film, a silicon fluoride carbonitride film, or a silicon fluoride oxynitride film.

16. A method for producing a silicon-containing thin film according to claim 11, wherein the silicon-containing thin film has a dielectric constant of 3.0 or less.

17. A fluoroaminosilane compound represented by the following chemical formula 1. [Chemical formula 1] In the aforementioned chemical formula 1, A is hydrogen, (C1-C7) alkyl, fluoro, fluoro(C1-C7) alkyl, or NR ａ R ｂ And, R is hydrogen, (C1-C7) alkyl, (C2-C7) alkenyl, (C2-C7) alkynyl, fluoro, fluoro(C1-C7) alkyl, fluoro(C2-C7) alkenyl, fluoro(C2-C7) alkynyl, or NR ａ R ｂ And, R ａ and R ｂ Each of these is independently hydrogen or (C1-C7) alkyl, R １ It is a (C1-C7) alkyl group, R ２ (C1-C7) alkyl or -Si(R １１ ) (Caution １２ ) (Caution １３ ) and R １１ It is fluoro, R １２ and R １３ These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

18. The fluoroaminosilane compound according to claim 17, represented by the following chemical formula 2. [Chemical formula 2] In the aforementioned chemical formula 2, R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR ａ R ｂ and R ａ and R ｂ Each of these is independently hydrogen or (C1-C7) alkyl, R １ It is a (C1-C7) alkyl group, R ２ is (C1-C7)alkyl or -Si(R １１ )(R １２ )(R １３ ) and R １１ It is fluoro, R １２ and R １３ These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

19. The fluoroaminosilane compound according to claim 17, represented by the following chemical formula 3. [Chemical formula 3] In the aforementioned chemical formula 3, R １ It is a (C1-C7) alkyl group, R ２ (C1-C7) alkyl or -Si(R １１ ) (Caution １２ ) (Caution １３ ) and R １１ It is fluoro, R １２ and R １３ These are, independently, hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

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