SiC substrates and SiC crystals with uniform stress distribution in three dimensions

By dividing SiC substrates into layers with controlled stress distribution, the quality and usability of SiC crystals and substrates are improved, reducing defects and enhancing downstream product processing.

JP2026521204APending Publication Date: 2026-06-26SICC SHANGHAI CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SICC SHANGHAI CO LTD
Filing Date
2024-05-29
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

SiC crystals and substrates suffer from defects such as polycrystalline, polymorphic, and dislocation defects due to imbalances in the Si/C ratio and temperature gradients, leading to internal and surface stress that degrade quality, limit usage, and increase defects in downstream products.

Method used

A SiC substrate is divided into three layers with controlled radial stress distribution: a first and second surface layer and an intermediate layer, ensuring low and uniform stress differences between layers, and a SiC crystal with uniform stress distribution in three dimensions.

Benefits of technology

The uniform stress distribution improves substrate quality, expands application range, and enhances the quality of crystals and epitaxial layers by reducing defects and cracking, allowing for high-quality production and processing.

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Abstract

This application discloses a SiC substrate and a SiC crystal having a uniform stress distribution in three dimensions, and belongs to the technical field of SiC production and processing. The SiC substrate includes a first surface layer, a second surface layer and an intermediate layer, and on the same axis, in any plane parallel to the first principal surface or the second principal surface of the first surface layer, Smax1 represents the maximum absolute value of the radial stress in the first surface layer, Smax2 represents the maximum absolute value of the radial stress in the intermediate layer, and Smax3 represents the maximum absolute value of the radial stress in the second surface layer, with △S1 = Smax2 - Smax1, △S2 = Smax2 - Smax3, -15MPa ≤ △S1 ≤ 10MPa, and -15MPa ≤ △S2 ≤ 10MPa. The radial stress in the SiC substrate in the first surface layer, the second surface layer, and the intermediate layer is relatively low, and the uniformity of the stress distribution between each layer is high. This improves the quality of the SiC substrate, expands the range of applications for the SiC substrate, and is advantageous for the downstream production and processing of epitaxial wafers and crystals.
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