Bridge device, substrate, and LED light-emitting device

Abstract

The present application relates to a bridge device, a substrate, and a light-emitting device. The bridge device has at least two bridge electrode groups that are electrically isolated from each other and are mounted on a mounting plate, each bridge electrode group consisting of two electrically connected bridge electrodes, the bridge electrode groups including a first bridge electrode group and a second bridge electrode group, and a first straight line defined by the two bridge electrodes of the first bridge electrode group and a second straight line defined by the two bridge electrodes of the second bridge electrode group intersect with a projection line on the mounting plate.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This invention claims priority to a Chinese patent application entitled "Bridge Device" filed on January 14, 2023, with application number 2023100973522, the entire contents of which are incorporated herein by reference. [Technical Field]

[0002] The present invention relates to the field of electronics, and more particularly to bridge devices, substrates, and light-emitting devices. [Background technology]

[0003] With the development of light-emitting diode (LED) technology, light-emitting devices capable of emitting light at two or more color temperatures are becoming increasingly popular. For example, in the lighting field, lamps can emit light at different color temperatures to create different ambiances, which is deeply appreciated by consumers. For example, in a light-emitting device containing LED chips with two color temperatures, when only one LED chip is turned on, the light-emitting device can emit light at either the first or second color temperature. When both LED chips are turned on simultaneously, the light-emitting device can emit light at a third color temperature. Therefore, the LED chips with different color temperatures in a light-emitting device must be driven independently. Furthermore, to ensure uniform light mixing when a light-emitting device emits light at a third color temperature, the LED chips with the two color temperatures must be evenly staggered within the light-emitting device. The uniformity of light mixing is positively correlated with the uniformity of the staggered arrangement of the LED chips with different color temperatures. When LED chips have a flip-chip structure, the substrate on which the LED chips are mounted in the light-emitting device becomes complex, making it impossible to use a single-layer substrate. On the other hand, when LED chips have a face-up structure, the gold wires intersect between the LED chips, making short circuits between the gold wires more likely to occur. In particular, when LED chips are mounted on a chip-on-board (COB) using a package adhesive such as a phosphor adhesive, the intersecting gold wires are compressed by the package adhesive, resulting in short circuits.

[0004] Therefore, how to simplify the substrate structure in a light-emitting device based on a flip-chip LED chip and how to reduce the risk of short-circuiting of gold wires in a light-emitting device based on a face-up LED chip are technical problems that need to be solved as soon as possible. Summary of the Invention [Problem to be solved by the invention]

[0005] In view of the above-mentioned deficiencies of the prior art, the object of the present invention is to provide a bridge device to solve the problems of the complicated substrate structure and the tendency to short-circuit in existing light-emitting devices. [Means for solving the problem]

[0006] The present invention provides a bridge device comprising a mounting plate and at least two bridge electrode groups disposed on the mounting plate, the bridge electrode groups being electrically isolated from each other, each bridge electrode group being composed of two bridge electrodes electrically connected to each other, the at least two bridge electrode groups including a first bridge electrode group and a second bridge electrode group, and a first straight line defined by the two bridge electrodes of the first bridge electrode group and a second straight line defined by the two bridge electrodes of the second bridge electrode group intersecting with each other as projected lines on the mounting plate.

[0007] The bridge device includes a first bridge electrode group and a second bridge electrode group, and a first line passing through two bridge electrodes of the first bridge electrode group intersects with a second line passing through two bridge electrodes of the second bridge electrode group as projected lines on the mounting plate. The two bridge electrodes of the first bridge electrode group are electrically connected to each other, and the two bridge electrodes of the second bridge electrode group are also electrically connected to each other, but the two bridge electrode groups are electrically isolated from each other. That is, the connecting lines of the two bridge electrodes of the first bridge electrode group and the connecting circuits of the two bridge electrodes of the second bridge electrode group have no common points. However, the two bridge electrodes of the first bridge electrode group can be connected by crossing the two bridge electrodes of the second bridge electrode group or bypassing the two bridge electrodes of the second bridge electrode group. This allows the bridge device to be installed between light-emitting chips that require cross-connection in a light-emitting device, replacing the complex circuit structure within the substrate to achieve the cross-connection. This simplifies the substrate structure, reduces the production cost of light-emitting devices, and improves production efficiency. Alternatively, the cross-connection can be achieved by replacing the gold wires intersecting between the light-emitting chips, thereby reducing the risk of short circuits and improving the quality of the light-emitting device. Furthermore, because the bridge device is a device independent of the substrate, it can be flexibly arranged on the substrate as needed. In particular, in a solution for manufacturing a light-emitting device based on a face-up light-emitting chip, the use of the bridge device is hardly restricted by the circuit structure of the substrate itself, and the corresponding substrate design does not need to consider the arrangement of the light-emitting chip or bridge device. This greatly achieves a separation between the circuit structure of the substrate and the device arrangement on the substrate, thereby improving the flexibility of light-emitting device manufacturing. [Brief explanation of the drawings]

[0008] [Figure 1a] 1 is a schematic diagram of an arrangement of two-color temperature LED chips in a light-emitting structure using a flip-chip type chip as shown in the present application. [Figure 1b] 1 is a cross-sectional schematic diagram of a light-emitting structure using a flip-chip type chip as presented in the present application. [Figure 1c]1 is a schematic diagram of an arrangement of two color temperature LED chips in a light-emitting structure using face-up chips as shown in the present application. [Figure 2] 1 is a schematic diagram illustrating the principle of a bridge device provided in any embodiment of the present application. [Figure 3a] FIG. 2 is a first structural schematic diagram of a bridge device provided in any embodiment of the present application. [Figure 3b] FIG. 10 is a second structural schematic diagram of a bridge device provided in any embodiment of the present application. [Figure 3c] FIG. 10 is a third structural schematic diagram of a bridge device provided in any embodiment of the present application. [Figure 3d] FIG. 10 is a fourth structural schematic diagram of a bridge device provided in any embodiment of the present application. [Figure 4] 1 is a schematic diagram of cross-connecting light-emitting chips using a bridge device as disclosed in any embodiment of the present application. [Figure 5a] 1 is a cross-sectional schematic view of a bridge device provided in any embodiment of the present application. [Figure 5b] FIG. 1 is a schematic top view of a bridge device provided in an optional embodiment of the present application. [Figure 5c] 10 is another cross-sectional schematic view of a bridge device provided in any embodiment of the present application. [Figure 6a] FIG. 10 is a structural schematic diagram of a bridge device provided in another optional embodiment of the present application. [Figure 6b] FIG. 6b is a schematic diagram of the fabrication process for the bridge device of FIG. 6a. [Figure 7a] FIG. 10 is another schematic diagram of the structure of a bridge device provided in another optional embodiment of the present application. [Figure 7b] FIG. 7b is a schematic diagram of the fabrication process for the bridge device of FIG. 7a. [Figure 8a] 7b is a schematic diagram of the distribution of first and second vias in the bridge device of FIG. 7a; [Figure 8b] FIG. 7b is a schematic bottom view of the bridge device of FIG. 7a. [Figure 9a]1 is a structural schematic diagram of a substrate provided in yet another optional embodiment of the present application. [Figure 9b] FIG. 10 is another structural schematic diagram of a substrate provided in yet another optional embodiment of the present application. [Figure 10] 10 is a schematic bottom view of a light-emitting chip provided in yet another optional embodiment of the present application. [Figure 11] FIG. 1 is a structural schematic diagram of a light-emitting device provided in Example 1 of yet another optional embodiment of the present application. [Figure 12a] FIG. 10 is a structural schematic diagram of a light-emitting device provided in Example 2 of yet another optional embodiment of the present application. [Figure 12b] 12b is a schematic diagram of the circuit principle corresponding to the light-emitting device of FIG. 12a; [Figure 13a] FIG. 10 is a structural schematic diagram of a light-emitting device provided in Example 3 of yet another optional embodiment of the present application. [Figure 13b] FIG. 13b is a schematic diagram of the circuit principle corresponding to the light-emitting device of FIG. 13a. [Figure 14] FIG. 10 is a structural schematic diagram of a light-emitting device provided in Example 4 of yet another optional embodiment of the present application. [Figure 15] FIG. 10 is another structural schematic diagram of the light-emitting device provided in Example 4 of yet another optional embodiment of the present application. [Figure 16] FIG. 10 is a structural schematic diagram of a light-emitting device provided in Example 5 of yet another optional embodiment of the present application. [Figure 17] FIG. 10 is a structural schematic diagram of a light-emitting device provided in Example 6 of yet another optional embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0009] To facilitate understanding of the present application, the present application will now be described more comprehensively with reference to the accompanying drawings. Preferred embodiments of the present application are illustrated in the accompanying drawings. However, the present application may be embodied in many different forms and is not limited to the embodiments set forth herein. Rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the invention of the present application.

[0010] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0011] 1a, the LED chips 11 of a light emitting structure 10 are typically arranged in an array on one side of a circuit board 12. When the light emitting structure 10 has LED chips 11 of two color temperatures, i.e., LED chips 11a of a first color temperature and LED chips 11b of a second color temperature, a typical arrangement of the LED chips 11 of the light emitting structure 10 is shown in FIG. 1a, considering uniform light mixing. That is, the LED chips 11a of the first color temperature and the LED chips 11b of the second color temperature are arranged alternately not only in rows but also in columns.

[0012] The light emitting structure 10 of FIG. 1a can achieve light output at at least two color temperatures. In some examples of this embodiment, referring to FIG. 1b, the light emitting structure 10 supports light output at three color temperatures. For example, a plurality of LED chips 11a with a first color temperature are connected in series to form a first branch, and a plurality of LED chips 11b with a second color temperature are connected in series to form a second branch. Light output at the first color temperature can be achieved by turning on only the first branch, light output at the second color temperature can be achieved by turning on only the second branch, and light output at a third color temperature can be achieved by turning on the first and second branches simultaneously. To achieve independent control of the LED chips 11a with a first color temperature and the LED chips 11b with a second color temperature, in some examples, the LED chips 11 have a flip-chip structure, and these LED chips 11 are electrically connected to each other via the circuit layer of the circuit board 12. FIG. 1b shows a schematic cross-sectional view of the light emitting structure 10 along L-L' in FIG. 1a. As can be seen from FIG. 1b, the circuit board 12 needs to be a multi-layer board, otherwise the LED chip 11a of the first color temperature and the LED chip 11b of the second color temperature cannot be controlled separately.

[0013] Judging from the current level of industrial technology, the luminous efficiency of flip-chip LED chips 11 is still inferior to that of face-up LED chips, especially in the lighting field. Face-up LED chips are still the mainstream. However, it is clear to those skilled in the art that if the LED chips 11 in FIG. 1a were replaced with a face-up LED chip, the gold wires would inevitably be frequently intertwined between the LED chips 11, increasing the risk of short circuits and reducing the production yield of the light emitting structure 10. When using face-up LED chips 11 in a light emitting structure 10, the corresponding light mixing effect of the light emitting structure 10 must be sacrificed to reduce the risk of short circuits and improve the reliability of the light emitting structure 10. Therefore, a different chip arrangement method than that shown in FIG. 1a is adopted. For example, referring to FIG. 1c, in FIG. 1c, the first color temperature LED chips 11a and the second color temperature LED chips 11b in each light emitting structure 10 are simply arranged alternately in rows, without interleaving within the rows. That is, a single chip row is composed of only LED chips 11 of a single color temperature.

[0014] It can be seen that in the prior art, the cost of achieving uniform light mixing is high, and uniform light mixing is accompanied by a complex circuit board structure and low product yield.

[0015] In light of this, the present application aims to provide a solution that can solve the above technical problems, the details of which will be described in the examples below.

[0016] Any embodiment of the present application The present application first provides a bridge device 20. Referring to FIG. 2 , the bridge device 20 includes a mounting plate 21 and at least two bridge electrode groups 22 mounted on the mounting plate 21. Each bridge electrode group 22 is electrically isolated from the others and includes two bridge electrodes 220 that are electrically connected to each other. In FIG. 2 , the electrical connections between the bridge electrodes 220 of the bridge electrode groups 22 are indicated by thick dotted lines, but the direction of the thick dotted lines does not limit the arrangement of the connecting wiring or connecting line layers between the bridge electrodes 220. In FIG. 2 , a first bridge electrode group 22a and a second bridge electrode group 22b are mounted on the mounting plate 21 of the bridge device 20. The first bridge electrode group 22a includes two bridge electrodes 220 that are electrically connected to each other. The second bridge electrode group 22b also includes two bridge electrodes 220 that are electrically connected to each other. In this embodiment, "the bridge electrode groups 22 are electrically isolated from each other" means that there is no electrical connection between any two bridge electrode groups 22 in the bridge device 20. For example, the first bridge electrode group 22a and the second bridge electrode group 22b are not connected to each other. In this embodiment, a virtual line defined by the two bridge electrodes 220 of the first bridge electrode group 22a is defined as a first line, and another virtual line defined by the two bridge electrodes 220 of the second bridge electrode group 22b is defined as a second line. The first line and the second line are intersected by a projection line on the mounting plate; that is, the first line passing through the two bridge electrodes 220 of the first bridge electrode group 22a and the second line passing through the two bridge electrodes 220 of the second bridge electrode group 22b intersect.

[0017] In order to facilitate the description of the solution of the present application and the understanding of the solution by those skilled in the art, in this embodiment, the two bridge electrodes 220 of the first bridge electrode group 22a are represented by "A" and "B", respectively, and the two bridge electrodes 220 of the second bridge electrode group 22b are represented by "C" and "D". Since the line passing through the two bridge electrodes 220 of the bridge electrode group 22 is not the same as the line segment between the two bridge electrodes 220 of the bridge electrode group 22, the first line passing through the two bridge electrodes 220 of the first bridge electrode group 22a and the second line passing through the two bridge electrodes 220 of the second bridge electrode group 22b intersect with each other, but this does not mean that the line segment between the two bridge electrodes 220 of the first bridge electrode group 22a and the line segment between the two bridge electrodes 220 of the second bridge electrode group 22b necessarily intersect with each other. For example, in FIG. 3a, the first line segment between bridge electrodes A and B of the first bridge electrode group 22a does not intersect with the second line segment between bridge electrodes C and D of the second bridge electrode group 22b, but it can be understood that the second line segment intersects with an extension of the first line segment. Of course, in some other examples of this embodiment, as shown in FIGS. 3b, 3c, and 3d, the first line segment (i.e., the line connecting bridge electrodes A and B over the shortest distance) may directly intersect with the second line segment (i.e., the line connecting bridge electrodes C and D over the shortest distance). In FIGS. 3a to 3d, thick solid lines indicate the connecting wiring 213 between the bridge electrodes 220 of the bridge electrode group 22. However, those skilled in the art will understand that there are many other options for arranging the connecting wiring and that the options shown are not limited to those shown.

[0018] In the bridge device 20, the first straight line passing through the two bridge electrodes 220 of the first bridge electrode group 22a intersects with the second straight line passing through the two bridge electrodes 220 of the second bridge electrode group 22b, and the bridge electrodes 220 of the bridge electrode groups 22 are electrically connected to each other. Therefore, when manufacturing a light-emitting device, if crossing electrical connections are required at spatial positions between light-emitting chips for purposes such as improving the uniformity of mixed light, the bridge device 20 can be used instead of a substrate or external gold wire to achieve this, which can simplify the complexity of the substrate structure, avoid problems such as short circuits of the gold wires, reduce the production costs of the light-emitting device, and improve production efficiency and production yield.

[0019] For example, referring to FIG. 4 , a bridge device 20 is used to spatially cross-connect light-emitting chips 30 of two color temperatures. FIG. 4 shows a minimum unit in which the bridge device 20 is used to electrically connect the light-emitting chips 30. This minimum unit has four light-emitting chips 30, two of which are light-emitting chips 30a of a first color temperature and the remaining two are light-emitting chips 30b of a second color temperature. The four light-emitting chips 30 are arranged around the bridge device 20, and the light-emitting chips 30 of the same color temperature are arranged at intervals. The positive electrode of one light-emitting chip 30a of the first color temperature is electrically connected to the bridge electrode A of the bridge device 20, and the negative electrode of the other light-emitting chip 30a of the first color temperature is electrically connected to the bridge electrode B of the bridge device 20. The bridge electrode A and the bridge electrode B belong to the first bridge electrode group 22a and are electrically connected to each other, so that the bridge device 20 realizes a series connection of the two light-emitting chips 30a of the first color temperature. Similarly, the positive electrode of one of the light-emitting chips 30b with the second color temperature is electrically connected to the bridge electrode C of the bridge device 20, and the negative electrode of the other light-emitting chip 30b with the second color temperature is electrically connected to the bridge electrode D of the bridge device 20. The bridge electrodes C and D belong to the second bridge electrode group 22b and are electrically connected to each other, so that the bridge device 20 also realizes a series connection of two light-emitting chips 30b with the second color temperature. It has been found that the bridge device 20 spatially cross-connects the light-emitting chips 30 with different color temperatures while ensuring electrical isolation between the light-emitting chips 30 with different color temperatures.

[0020] In this embodiment, the light-emitting chip 30a of the first color temperature located at the upper left corner of the bridge device 20 in FIG. 4 is assumed to be the first light-emitting chip, the light-emitting chip 30a of the first color temperature located at the lower right corner of the bridge device 20 is assumed to be the second light-emitting chip, the light-emitting chip 30b of the second color temperature located at the upper right corner of the bridge device 20 is assumed to be the third light-emitting chip, and the light-emitting chip 30b of the second color temperature located at the lower right corner of the bridge device 20 is assumed to be the fourth light-emitting chip. The negative electrode of the first light-emitting chip is electrically connected to one bridge electrode A of the first bridge electrode group 22a, the positive electrode of the second light-emitting chip is electrically connected to another bridge electrode A of the first bridge electrode group 22a, and the positive electrode of the second light-emitting chip is electrically connected to the first bridge electrode group 22b. The first light-emitting chip is electrically connected to another bridge electrode B of the bridge electrode group 22a, and at least one of the positive electrode of the first light-emitting chip and the negative electrode of the second light-emitting chip may be electrically connected to another light-emitting chip of the same color temperature (i.e., a light-emitting chip of the first color temperature other than the first light-emitting chip and the second light-emitting chip). For example, assuming that the positive electrode of the first light-emitting chip is electrically connected to the negative electrode of the fifth light-emitting chip, in some other examples, the positive electrode of the fifth light-emitting chip may no longer be connected in series to other light-emitting chips. In other examples, the positive electrode of the fifth light-emitting chip is also connected in series to the sixth light-emitting chip, and the fifth light-emitting chip and the sixth light-emitting chip also belong to the light-emitting chip 30a of the first color temperature. In the latter case, it is actually the series branch formed by the fifth light-emitting chip and the sixth light-emitting chip that is electrically connected to the positive electrode of the first light-emitting chip. In other words, in the latter case, the sixth light-emitting chip, the fifth light-emitting chip, the first light-emitting chip, and the second light-emitting chip are connected in series in order, the negative electrode of the third light-emitting chip is electrically connected to one bridge electrode C of the second bridge electrode group 22b, the positive electrode of the fourth light-emitting chip is electrically connected to another bridge electrode D of the second bridge electrode group 22b, and at least one of the positive electrode of the third light-emitting chip and the negative electrode of the fourth light-emitting chip is electrically connected to other light-emitting chips of the same color temperature (i.e., light-emitting chips of the larger two color temperatures other than the third light-emitting chip and the fourth light-emitting chip).For example, if the negative electrode of the third light-emitting chip is electrically connected to the positive electrode of the seventh light-emitting chip, in some cases, the negative electrode of the seventh light-emitting chip may no longer be connected in series with other light-emitting chips, and in other cases, the positive electrode of the seventh light-emitting chip may also be connected in series with the eighth light-emitting chip. In the latter case, what is electrically connected to the negative electrode of the third light-emitting chip is actually a series branch formed by the seventh and eighth light-emitting chips. In other words, the eighth light-emitting chip, the seventh light-emitting chip, the third light-emitting chip, and the fourth light-emitting chip are connected in series in order, and all four of these belong to the second color temperature light-emitting chip 30b.

[0021] In this embodiment, the light-emitting chip may be an LED chip, including a mini LED (submillimeter light-emitting diode) chip, a micro LED (micrometer-level light-emitting diode) chip, or even a regular LED chip that is larger than a mini LED chip. In some other examples of this embodiment, the light-emitting chip may be an organic light-emitting diode (OLED) chip.

[0022] In some examples of this embodiment, two bridge electrodes 220 belonging to the same bridge electrode group 22 may be located on the same surface of the mounting plate 21. For example, referring to the cross-sectional schematic view of the bridge device 20 shown in FIG. 5a, the cross section corresponding to the cross-sectional schematic view is perpendicular to the surface of the mounting plate 21 on which the bridge electrodes 220 are provided. Bridge electrodes A and bridge electrodes B belonging to the same bridge electrode group 22 are located on the same surface of the mounting plate 21, and bridge electrodes C and bridge electrodes D belonging to the same bridge electrode group 22 are also located on the same surface of the mounting plate 21. However, in other examples of this embodiment, two bridge electrodes 220 of the same bridge electrode group 22 may be distributed on different surfaces of the mounting plate 21. 5b shows a schematic top view of an example of a bridge device 20, in which bridge electrodes A and B of a first bridge electrode group 22a are respectively distributed on two opposing side surfaces of the bridge device 20, and bridge electrodes C and D of a second bridge electrode group 22b are also respectively distributed on two opposing side surfaces of the bridge device 20. In other examples, the two bridge electrodes 220 of some bridge electrode groups 22 of the bridge device 20 are distributed on the same surface of the mounting plate 21, while the two bridge electrodes 220 of other bridge electrode groups 22 are distributed on different surfaces of the mounting plate 21.

[0023] In some examples of this embodiment, two bridge electrodes 220 belonging to the same bridge electrode group 22 are distributed on the same surface of the mounting plate 21, but different bridge electrode groups 22 may be distributed on different surfaces of the mounting plate 21. For example, in some examples of this embodiment, the first bridge electrode group 22a is distributed on the top surface of the mounting plate 21 (in this embodiment, the top surface of the mounting plate 21 refers to the surface of the mounting plate 21 that faces the substrate when the bridge device 20 is mounted on the substrate), and the second bridge electrode group 22b is distributed on the bottom surface of the mounting plate 21 (in this embodiment, the bottom surface of the mounting plate 21 refers to the surface of the mounting plate 21 that faces the substrate when the bridge device 20 is mounted on the substrate). There are also some examples of bridge devices 20 in which at least the first bridge electrode group 22a and the second bridge electrode group 22b are disposed on the same surface of the mounting plate 21, so continue to refer to FIG. 5a and further combine it with FIG. 5c.

[0024] 5a, not only are all of the bridge electrodes 220 of the first bridge electrode group 22a and the second bridge electrode group 22b located on the same surface of the mounting plate 21, but the four bridge electrodes 220 are in the same plane. However, in FIG. 5c, although all of the bridge electrodes 220 of the first bridge electrode group 22a and the second bridge electrode group 22b are located on the same surface of the mounting plate 21, bridge electrodes A and B of the first bridge electrode group 22a and bridge electrodes C and D of the second bridge electrode group 22b are in different planes. This is because the surface of the mounting plate 21 on which the bridge electrodes 220 are mounted has a stepped structure, and there is a difference in height between the different surfaces.

[0025] Furthermore, in some of the above examples, each bridge electrode 220 is located on only one surface of the mounting plate 21, but in some other examples of this embodiment, it is not excluded that one bridge electrode 220 is simultaneously located on different surfaces of the mounting plate 21. For example, in some examples, one bridge electrode 220 penetrates the top and bottom surfaces of the mounting plate 21 at the same time, with one end of the bridge electrode 220 exposed on the top surface of the mounting plate 21 and the other end exposed on the bottom surface of the mounting plate 21.

[0026] When a light-emitting chip 30 with a face-up structure is used, its chip electrodes face the substrate. When a bridge device 20 to be used in combination with a light-emitting chip 30 with a face-up structure is mounted on a substrate to facilitate connecting the chip electrodes of the light-emitting chip 30 and the bridge electrodes 220 of the bridge device 20 with gold wires, the bridge electrodes 220 also face the substrate. Similarly, when a bridge device 20 to be used in combination with a light-emitting chip 30 with a flip-chip structure is mounted on a substrate, the bridge electrodes 220 face the substrate. Taking an example in which all of the bridge electrodes 220 of the first bridge electrode group 22a and the second bridge electrode group 22b of the bridge device 20 are located on the same surface of the mounting plate 21, assuming that the mounting plate 21 has a first surface and a second surface facing each other and all of the four bridge electrodes 220 are located on the first surface of the mounting plate 21, when the bridge device 20 is used in combination with a flip-chip type chip, the first surface of the bridge device 20 must face the substrate when the bridge device 20 is mounted on a substrate, and when the bridge device 20 is used in combination with a face-up chip, the first surface of the bridge device 20 must face the substrate when the bridge device 20 is mounted on a substrate. In some examples of this embodiment, the bridge device 20 is similar to the light-emitting chip 30, and there is also a difference between "face-up" and "flip-chip".

[0027] It can be understood that the mounting plate 21 includes both conductive and insulating materials because, in addition to supporting the bridge electrodes 220, it also needs to achieve electrical connection between the bridge electrodes 220 of the bridge electrode group 22. In some examples of this embodiment, the mounting plate 21 has multiple insulating layers and multiple patterned conductive layers. The conductive layers form a conductive structure that electrically connects the bridge electrodes 220 of the bridge electrode group 22. The insulating layers, on the one hand, serve to support the conductive layers and, on the other hand, serve to achieve electrical insulation between the conductive layers and between the conductive layers and the outside world. In some examples of this embodiment, only one conductive layer is provided on the mounting plate 21, and the conductive layer is patterned by a process such as etching to form connection wiring that connects the bridge electrodes 220 to each other. In other examples, the mounting plate 21 has at least two conductive layers, and the two conductive layers are separated by an insulating layer. Different conductive layers are used to electrically connect the bridge electrodes 220 of different bridge electrode groups 22, and each bridge electrode 220 can be electrically connected to the corresponding conductive layer using vias.

[0028] In some examples of this embodiment, the conductive layer on the mounting plate 21 can be formed of one or more metals with excellent conductivity, such as at least one of copper, gold, silver, platinum, etc. In other examples, the conductive layer can also be formed of a non-metallic material with excellent conductivity, such as at least one of graphite, graphene, CNT (carbon nanotube material), etc. The bridge electrodes 220 are typically made of a metal material, and therefore, in some examples, it can be understood that the material of the bridge electrodes 220 is the same as the material of the conductive layer of the mounting plate 21. In some examples of this embodiment, the bridge electrodes 220 can be a single metal, for example, a gold electrode with excellent conductivity. In other examples, the bridge electrodes 220 can be a metal composite layer structure including at least two of a gold layer, a platinum layer, a chromium layer, a silver layer, an aluminum layer, etc. In still other examples, the bridge electrodes 220 can be an alloy material, for example, but not limited to, a gold-copper alloy or a silver-aluminum alloy. In some other embodiments, the bridge electrode 220 may be a metal compound electrode such as at least one of materials including ITO (indium tin oxide), IZO (indium zinc oxide), and IZTO (indium zinc tin oxide). However, this embodiment does not exclude the case where the bridge electrode 220 includes a non-metallic conductive material such as the aforementioned graphite material, graphene material, or CNT material. In some examples of this embodiment, the at least one insulating layer on the mounting plate 21 may be an insulating resin layer. In other examples, the at least one insulating layer on the mounting plate 21 may be realized by at least one of an Al2O3 (aluminum oxide) layer, an SiO2 (silicon dioxide) layer, an AlON (aluminum oxynitride) layer, and an AlF3 (aluminum fluoride) layer.

[0029] According to the above description, those skilled in the art can understand that the structure of the mounting plate 21 may be similar to that of a printed circuit board (PCB). In some other examples of this embodiment, the bridge device 20 may have a wafer structure, and in these examples, the "bridge device" may also be called a "bridge wafer," and the mounting plate 21 includes multiple materials that form the light-emitting chips 30. Here, taking a typical GaN-based LED chip as an example of the light-emitting chip, the mounting plate 21 may include an unintentionally doped GaN layer as an insulating layer.

[0030] In some examples of this embodiment, the mounting plate 21 of the bridge device 20 also includes a base layer similar to that of the LED chip. Continuing with the example of a GaN-based LED chip, in this case, the growth base of the light-emitting chip 30 is typically a sapphire base, and the epitaxial layer of the light-emitting chip 30 is formed by epitaxial growth on the growth base. Similarly, the bridge device 20 may also include a growth base of an unintentionally doped GaN layer, such as a sapphire base, formed by epitaxial growth on the sapphire base. Because the sapphire base also has excellent insulating properties and can be used as the insulating layer of the mounting plate 21, in this example, the unintentionally doped GaN layer and the sapphire base can be used together as the insulating layer of the mounting plate 21. In other examples of this embodiment, the insulating base may be used directly as an independent insulating layer without providing an unintentionally doped GaN layer on an insulating base such as a sapphire base. Of course, this embodiment does not limit the base layer of the light-emitting chip 30 or the bridge device 20 to sapphire material alone. For example, in some other examples of this embodiment, the base layer may be SiC (silicon carbide) based or Si (silicon) based.

[0031] Since the structure of the bridge wafer is similar to that of the light-emitting chip 30, it is understood that at least a part of the manufacturing process of the bridge wafer can be implemented by adopting a part of the manufacturing process of the light-emitting chip 30, the bridge wafer and the light-emitting chip 30 can share at least a part of the manufacturing equipment, and similarly, the bridge wafer and the light-emitting chip 30 can be mounted on the substrate of the light-emitting device using the same die bonding equipment. As a result, it is understood that the production cost of the bridge wafer can be reduced.

[0032] Of course, there are differences between the bridge wafer and the light-emitting chips 30. For example, there are many differences in size. Typically, the size of the bridge device 20 is smaller than the size of the light-emitting chips 30 in order to minimize the impact of the installation of the bridge device 20 in the light-emitting device on the arrangement spacing of the light-emitting chips 30 and to reduce the impact of the bridge device 20 on the light-mixing effect of the light-emitting device. Therefore, even if the bridge device 20 has a wafer structure, the specifications of the die bonding head used in the die bonding apparatus when installing the light-emitting chips 30 and the die bonding head used in the die bonding apparatus when installing the bridge device 20 may also be different.

[0033] In some examples of this embodiment, the outline of the mounting plate 21 in the bridge device 20 in a top view is approximately rectangular (or the vertical projection along a projection line perpendicular to the bottom surface (or top surface) of the mounting plate 21 is approximately rectangular). In some examples, the bridge electrodes A and B of the first bridge electrode group 22a are diagonally distributed at two corner regions of the rectangular outline, and the bridge electrodes C and D of the second bridge electrode group 22b are diagonally distributed at the other two corner regions of the rectangular outline. However, in other examples of this embodiment, some of the bridge electrodes 220 may not be distributed at the corner regions of the rectangular outline. For example, the corresponding bridge electrode A in FIG. 3a is located in the central region of the rectangular outline. In some examples of this embodiment, the length of the rectangular outline may range from 5 to 15 mils, such as 5 mils, 7 mils, 13 mils, or 15 mils, and the width of the rectangular outline may also range from 5 to 15 mils, such as 5 mils, 8 mils, 11 mils, or 14 mils. In some examples, the thickness of the bridge device 20 may be 120 to 200 μm. For example, in one example, the thickness of the bridge device 20 is 150 μm, and in another example, the thickness of the bridge device 20 is 185 μm. In other examples, the thickness of the bridge device 20 may be 120 μm, 134 μm, 167 μm, 188 μm, 196 μm, or 200 μm. Furthermore, the electrode size of the bridge electrode 220 of the bridge device 20 is generally 50 to 80 μm. A bridge electrode 220 of this size is suitable for gold wire bonding and is advantageous for improving the manufacturing efficiency of downstream products such as light-emitting devices. For example, the electrode size of the bridge electrode 220 may be 50 μm, 66 μm, 75 μm, 80 μm, or the like.

[0034] Those skilled in the art will understand that in some other examples of this embodiment, the dimensions of bridge device 20 may be other values, and further, in some examples, the approximate outline of mounting plate 21 of bridge device 20 in a top view may be a shape other than a rectangle, such as a circle, a parallelogram, a regular hexagon, or an octagon.

[0035] The bridge device 20 provided in this embodiment can replace the complex circuit structure in the substrate and the crossed gold wires between the light-emitting chips 30, and can realize cross-connection at the spatial position of the light-emitting chips 30, thereby simplifying the substrate structure, reducing the production cost of the light-emitting device, improving production efficiency, reducing the risk of short circuits, and improving the quality of the light-emitting device. Another optional embodiment of the present application

[0036] In order to help those skilled in the art better understand the structure and advantages of the aforementioned bridge device 20, this embodiment will further describe the bridge device 20 with reference to an example based on the aforementioned embodiment. Here, a wafer-structured bridge device 20 is taken as an example. Furthermore, based on the aforementioned drawings, Figures 6a to 8b are combined. Example 1

[0037] 6a, the mounting plate 21 of the bridge device 20 includes a base layer 211, an unintentionally doped GaN layer 212, and a connecting wire 213. Both the base layer 211 and the unintentionally doped GaN layer 212 are stacked in a direction perpendicular to the top or bottom surface of the mounting plate 21. The connecting wire 213 is disposed on the side of the unintentionally doped GaN layer 212 away from the base layer 211. The connecting wire 213 is formed by a patterned conductive layer and is connected between two bridge electrodes 220 of the same bridge electrode group 22. In this embodiment, the connecting wire 213 includes a first connecting wire that electrically connects the two bridge electrodes 220 of the first bridge electrode group 22a and a second connecting wire that electrically connects the two bridge electrodes 220 of the second bridge electrode group 22b. In the process of fabricating the bridge device 20, first, an unintentionally doped GaN layer 212 is deposited on a base layer 211. Next, a conductive layer is formed on the unintentionally doped GaN layer 212 by a process including, but not limited to, evaporation, and the conductive layer can be patterned to form the connecting wires 213. In some examples of this embodiment, the connecting wires 213 and the bridge electrodes 220 are formed of the same conductive metal, and both can be formed by patterning the same conductive metal. Note that FIG. 6a only illustrates the positional relationship of the connecting wires 213 on the unintentionally doped GaN layer 212 and does not imply that the connecting wires 213 connect different bridge electrode groups 22. FIGS. 3a to 3d show schematic diagrams of the directions of the connecting wires 213 in the first bridge electrode group 22a and the second bridge electrode group 22b. In these examples, the connection wiring 213 corresponding to the first bridge electrode group 22a and the connection wiring 213 corresponding to the second bridge electrode group 22b are on the same plane, so their vertical projections on the bottom surface of the bridge device 20 do not intersect. However, those skilled in the art will understand that the direction of the connection wiring 213 can be set in other ways in addition to the methods shown in Figures 3a to 3d. For example, the main directions of the connection wiring 213 may be different, or the connection wiring 213 may be composed of multiple arc segments arranged in a wavy pattern.

[0038] In some examples of this embodiment, the connecting wire 213 may be exposed. In other examples, the connecting wire 213 may be covered with a passivation layer, which may include, but is not limited to, at least one of an Al2O3 material and a SiO2 material. In some examples of this embodiment, the passivation layer includes an Al2O3 layer directly bonded to the connecting wire 213. The Al2O3 layer may be formed by an ALD (atomic layer deposition) process and has dense properties. A SiO2 layer is also covered on the Al2O3 layer. It is understood that the passivation layer is actually an insulating layer, so in other examples of this embodiment, the material covering the connecting wire 213 may be replaced with another insulating material, such as an insulating resin. In some examples of this embodiment, the insulating layer covering the connecting wire 213 may cover most of the area of ​​the unintentionally doped GaN layer 212, leaving only the bridge electrode 220 exposed. In some other examples, the insulating layer covering the connection wiring 213 may cover only the connection wiring 213, leaving other areas exposed. In other words, the insulating layer covering the connection wiring 213 also has a "line" shape, just like the connection wiring 213.

[0039] The fabrication process of the bridge device 20 of FIG. 6a is described below in conjunction with the schematic diagram of the fabrication process shown in FIG. 6b. First, as shown in FIG. 6b(a), a base layer 211 is provided. The base layer 211 can be selected from a sapphire substrate, a GaN substrate, a Si substrate, etc. Next, the base layer 211 is placed in a reaction chamber, and an unintentionally doped GaN layer 212 is grown on the base layer 211 using any process, including, but not limited to, metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), as shown in FIG. 6b(b). Then, as shown in FIG. 6b(c), a conductive layer is formed on the unintentionally doped GaN layer 212 using any process, such as evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), or ALD. The conductive layer is typically a metal layer. For example, the conductive layer may include at least one of Cu, Al, Au, Ag, etc. The conductive layer may also include a metal compound or a non-metallic material with excellent conductivity. Next, the conductive layer is patterned to form connection wiring 213 including first and second connection wiring, a first bridge electrode group 22a, and a second bridge electrode group 22b. As shown in FIG. 6b (d), the first connection wiring is connected between two bridge electrodes 220 of the first bridge electrode group 22a, and the second connection wiring is connected between two bridge electrodes 220 of the second bridge electrode group 22b. In some examples of this embodiment, the fabrication of the bridge device 20 is completed after the patterning of the conductive layer is completed. However, in other examples, a passivation layer is also provided after the patterning of the conductive layer. The passivation layer is located on the side of the unintentionally doped GaN layer 212 away from the base layer 211 and covers the connection wiring 213. In some instances of this embodiment, the passivation layer may be linear and extend along the extension of the connecting wiring 213. In other instances, the passivation layer may be layered and, in addition to covering the connecting wiring 213, may also cover the regions of the unintentionally doped GaN layer 212 exposed to the connecting wiring 213.However, it will be appreciated that the face of bridge electrode 220 remote from unintentionally doped GaN layer 212 must be exposed to the passivation layer because the passivation layer is insulating. Example 2

[0040] 7a, the mounting plate 21 of the bridge device 20 includes a base layer 211, a first conductive layer 214, a first unintentionally doped GaN layer 215, a second conductive layer 216, and a second unintentionally doped GaN layer 217, which are stacked in this order. In this embodiment, the first conductive layer 214 and the second conductive layer 216 are typically patterned. The first conductive layer 214 is electrically connected to two bridge electrodes 220 (i.e., bridge electrode A and bridge electrode B) of the first bridge electrode group 22a through two first vias 218. The first vias 218 are formed by filling blind vias with a conductive material. The openings of the blind vias are located on the surface of the mounting plate 21 and penetrate the second unintentionally doped GaN layer 217 and the first unintentionally doped GaN layer 215, thereby electrically connecting the first conductive layer 214 to the bridge electrodes A and B. The second conductive layer 216 is electrically connected to two bridge electrodes 220 (i.e., bridge electrode C and bridge electrode D) of the second bridge electrode group 22b through two second vias 219. The second vias 219 are also formed by filling blind vias with a conductive material. The openings of the blind vias forming the second vias 219 are also located on the surface of the mounting plate 21. The blind vias only need to penetrate the second unintentionally doped GaN layer 217, thereby electrically connecting the second conductive layer 216 to the bridge electrodes C and D. Those skilled in the art will understand that in the bridge device 20 shown in FIG. 7a, the number of conductive layers of the mounting plate 21 is actually related to the number of bridge electrode groups 22 of the bridge device 20. In this example, only two conductive layers are provided. However, in some other examples, if the bridge device 20 has multiple bridge electrode groups 22, the mounting plate 21 will also have multiple conductive layers. The conductive layers correspond one-to-one to the bridge electrodes 22, and the conductive layers are electrically isolated from each other by insulating layers such as unintentionally doped GaN layers.

[0041] It can be understood that the first unintentionally doped GaN layer 215 in the bridge device 20 of FIG. 7 a is essential because it is necessary to electrically isolate the first conductive layer 214 and the second conductive layer 215, and that the second unintentionally doped GaN layer 217 is provided to electrically isolate the second conductive layer 215 from the outside. In some examples of this embodiment, the second unintentionally doped GaN layer 217 can be omitted, but omitting the second unintentionally doped GaN layer 217 increases the likelihood of a short circuit. Therefore, the bridge device 20 provided with the second unintentionally doped GaN layer 217 has higher electrical reliability and superior quality than the bridge device 20 without the second unintentionally doped GaN layer 217.

[0042] In FIG. 8 a, the dotted circular holes indicate the positional distribution of the first vias 218 and the second vias 219 when the bridge device 20 is viewed from the side where the base layer 211 is located. Because the base layer 211 in the bridge device 20 is typically a transparent sapphire base, if the first vias 218 penetrate the first conductive layer 214, it is understandable that the first vias 218 in the bridge device 20 are visible when the bridge device 20 is viewed from above from the side where the base layer 211 is located. Furthermore, because the unintentionally doped GaN material is transparent, the second vias 219 in the bridge device 20 are also visible when the bridge device 20 is viewed from above from the side where the base layer 211 is located, provided that the portion where the second vias 219 are located is not blocked by the first conductive layer 218. FIG. 8 b is a schematic diagram of the bridge device 20 viewed from above from the side where the bridge electrode 220 is located. In this view, the second unintentionally doped GaN layer 217 and the exposed bridge electrode 220 are visible. Although the outline of the bridge electrode 220 in Figure 8b is rectangular, it can be understood that in some other examples of this embodiment, the outline of the bridge electrode 220 in the schematic bottom view of the bridge device 20 can be other shapes, such as regular or irregular shapes, such as a parallelogram, a circle, a trapezoid, a triangle, etc. Although the outline of the first via 218 and the second via 219 in Figure 8a is circular, in some other examples of this embodiment, the circular outline can be replaced by other regular geometric shapes or irregular shapes.

[0043] In some embodiments, the bridge device 20 provided in Example 1 above is typically used in combination with a light-emitting chip having a face-up structure, and the bridge device 20 provided in Example 2 is used in combination with a light-emitting chip having a face-up structure. However, in some other examples of this embodiment, the bridge device 20 used in combination with a light-emitting chip having a face-up structure may also have a structure similar to that shown in FIG. 7A, and conversely, the bridge device 20 used in combination with a light-emitting chip having a flip-chip structure may also have a structure similar to that shown in FIG. 6. In particular, it should be understood that even when the bridge device 20 provided in Example 1 above is used in a flip-chip configuration after the connection wiring 213 is covered with a passivation layer, problems such as short circuits can be sufficiently avoided.

[0044] Although two bridge electrodes 220 of a bridge electrode group 22 can typically be electrically connected only through a conductive structure formed by one conductive layer, it should be understood that this embodiment does not exclude a situation in which two bridge electrodes 220 of a bridge electrode group 22 are electrically connected through a conductive structure formed by at least two conductive layers. Furthermore, according to the above-mentioned Examples 1 and 2, the conductive structures corresponding to different bridge electrode groups 22 can be formed by the same conductive layer on the mounting plate 21 (see the above-mentioned Example 1) or by different conductive layers on the mounting plate 21 (see the above-mentioned Example 2). When the conductive structures corresponding to two bridge electrode groups 22 are formed by the same conductive layer, the vertical projections of the conductive structures corresponding to the two bridge electrode groups 22 on the bottom surface of the mounting plate 21 do not intersect or overlap. On the other hand, when the conductive structures corresponding to two bridge electrode groups 22 are formed by different conductive layers, the vertical projections of the conductive structures corresponding to the two bridge electrode groups 22 on the bottom surface of the mounting plate 21 may or may not intersect or overlap.

[0045] The above examples have been mainly described using two bridge electrode groups 22 installed in the bridge device 20. However, if multiple bridge electrode groups 22, for example, four bridge electrode groups 22, are installed in one bridge device 20, the conductive structures corresponding to these bridge electrode groups 22 may all be formed by the same conductive layer, as in Example 1 above, or the conductive structures of each bridge electrode group 22 may be formed by separate conductive layers, as in Example 2 above, or the conductive structures corresponding to some of the bridge electrode groups 22 may be formed by the same conductive layer. For example, the conductive structures corresponding to two of the four bridge electrode groups 22 may be formed by one conductive layer of the mounting plate 21, and the conductive structures corresponding to the remaining two may be formed by another conductive layer of the mounting plate 21. Alternatively, the conductive structures corresponding to two of the four bridge electrode groups 22 may be formed by one conductive layer of the mounting plate 21, and the remaining two bridge electrode groups 22 may each correspond to independent conductive layers. Alternatively, the conductive structures corresponding to three of the four bridge electrode groups 22 may be formed by one conductive layer of the mounting plate 21, and the conductive structure corresponding to the remaining one may be formed by another conductive layer of the mounting plate 21.

[0046] Therefore, the arrangement of the conductive structures of the mounting plate 21 in this embodiment can be flexibly selected according to the actual situation, as long as the conductive structures corresponding to different bridge electrode groups 22 are electrically isolated, and this embodiment does not impose any other constraints.

[0047] The manufacturing flow of the bridge device 20 of FIG. 7a will be described below with reference to FIG. 7b. First, as shown in FIG. 7b(a), a base layer 211 is provided. The material for the base layer 211 is described above and will not be repeated here. Next, as shown in FIG. 7b(b), a first conductive layer 214 is formed on the base layer 211 by a process such as evaporation. In some examples of this embodiment, after the first conductive layer 214 is formed, it can be patterned into a "line" shape. However, in other examples, the first conductive layer 214 does not need to be patterned. In FIG. 7b(c), a first unintentionally doped GaN layer 215 can be formed on the first conductive layer 214 by evaporation, PVD, CVD, MOCVD, or MBE. In FIG. 7b(d), a second conductive layer 216 is formed on the first unintentionally doped GaN layer 215. Then, as shown in FIG. 7b (e), a second unintentionally doped GaN layer 217 is formed on the second conductive layer 216. At this point, the mounting plate 21 is essentially formed. Next, the mounting plate 21 is etched to form two sets of blind vias, each set including two blind vias. As shown in FIG. 7b (f), one set of blind vias penetrates the second unintentionally doped GaN layer 217, the second conductive layer 216, and the first unintentionally doped GaN layer 215 in order, exposing the first conductive layer 214 at the bottom of the vias. The other set of blind vias penetrates the second unintentionally doped GaN layer 217, exposing the second conductive layer 216 at the bottom of the vias. In this embodiment, the inner walls of the blind vias are insulated, and the positions of the blind vias on the mounting plate 21 essentially determine the positions of the bridge electrodes 220 on the mounting plate 21. Next, a conductive material such as a metal material is deposited on the mounting plate 21 by evaporation or the like, and the metal material is filled into the blind vias, so that the first set of blind vias form the first via 218, and the remaining set of blind vias form the second via 219. At the same time, as shown in Figure 7b (g), the conductive material is also deposited on the surface of the second unintentionally doped GaN layer 217 that is remote from the second conductive layer 216.Finally, as shown in FIG. 7b(h), the conductive layer on the side of the second unintentionally doped GaN layer 217 remote from the second conductive layer 216 is patterned to form a bridge electrode 220. Yet another optional embodiment of the present application

[0048] In this embodiment, an example in which the bridge device 20 described above is applied to a light-emitting device 50 will be described with reference to FIGS. 9a to 17. FIG.

[0049] The light emitting device 50 includes a substrate 40, a light emitting chip 30, and a bridge device 20. In this embodiment, the light emitting device 50 is a device with at least two color temperatures. For example, in some examples, it may support multiple color temperatures, such as three, five, or seven color temperatures. The different color temperatures supported by the light emitting device 50 must be achieved by the light emitting chips 30 of the different color temperatures of the light emitting device 50 individually or by all of them. In some examples of this embodiment, the light emitting chips 30 of each color temperature of the light emitting device 50 can be driven individually. In other examples, the light emitting device 50 includes light emitting chips 30 of n color temperatures, where m light emitting chips 30 can be driven individually and at least two of the light emitting chips of the nm color temperatures can be driven together. The following describes an example in which the light emitting chips 30 of each color temperature can be driven individually.

[0050] When the lighting control of the light-emitting chips 30 of each color temperature is independent, it is understood that at least one external electrode group is provided on the substrate 40 for each light-emitting chip 30 of each color temperature, and each external electrode group is composed of electrically isolated external positive and negative electrodes. Both ends of a series branch formed by light-emitting chips 30 of the same color temperature are electrically connected to the external positive and negative electrodes in that external electrode group. In some examples, two or more external electrode groups can be provided on the substrate 40 for light-emitting chips 30 of a specific color temperature. For example, the light-emitting chips 30 of a specific color temperature in the light-emitting device 50 form two series branches, each corresponding to one external electrode group. In some examples, each external electrode group on the substrate 40 has its own independent external positive and negative electrodes that are not shared with other external electrode groups. In other examples, at least some external electrode groups may share a specific polarity electrode. For example, in one example, all external electrode groups on the substrate 40 share the same external negative electrode, but the external positive electrodes of each external electrode group are independent of each other.

[0051] It is understood that the structure of the substrate 40 carrying a face-up chip is different from the structure of the substrate 40 carrying a flip-chip type chip. When the light-emitting chip 30 used in the light-emitting device 50 has a face-up structure, it is not necessary to provide chip pads on the substrate 40 that match the chip electrodes of the light-emitting chip 30, and it is also not necessary to provide bridge pads that match the corresponding bridge device 20. However, when the light-emitting chip 30 used in the light-emitting device 50 has a flip-chip structure, it is necessary to provide chip pads on the substrate 40 that match the chip electrodes of the light-emitting chip 30 and bridge pads that match the bridge device 20. Referring to FIG. 9a, a substrate 40 used in combination with a light-emitting chip 30 having a flip-chip structure is shown.

[0052] The substrate 40 has a base material 43, a chip pad group 44 provided on the base material 43, a bridge pad group 45, and an external electrode group.

[0053] In FIG. 9a, two external electrode groups are installed on a substrate 40, where the external positive electrode 41 has a first external positive electrode 41a and a second external positive electrode 41b, and the external negative electrode 42 has a first external negative electrode 42a and a second external negative electrode 42b, with the first external positive electrode 41a and the first external negative electrode 42a belonging to the same external electrode group and the second external positive electrode 41b and the second external negative electrode 42b belonging to another external electrode group.

[0054] Each chip pad group 44 corresponds to one light emitting chip 30, has two chip pads electrically isolated from each other, and has one-to-one correspondence with the chip electrodes of the light emitting chip 30. FIG. 10 shows a schematic bottom view of a flip-chip structured light emitting chip 30. Therefore, when the flip-chip structured light emitting chip 30 is mounted on the substrate 40, the chip electrodes of the light emitting chip 30 are coupled to the corresponding chip pads of the substrate 40 to achieve electrical connection. In this embodiment, at least four chip pad groups 44 are mounted on the substrate 40. For example, in FIG. 9a, exactly four chip pad groups 44 are mounted, but in some other examples, the number of chip pad groups 44 may be more, and the specific number can be determined according to the number of light emitting chips 30 that need to be mounted on the substrate 40.

[0055] Each bridge pad group 45 has a plurality of bridge pads 450, and the bridge pads 450 are electrically isolated from one another. The bridge pad groups 45 on the substrate 40 correspond one-to-one to the bridge devices 20 that need to be mounted on the substrate 40. Therefore, it can be understood that the number of bridge pads 450 in the bridge pad group 45 is related to the number of bridge electrodes 220 in the bridge devices 20, and the bridge pads 450 correspond one-to-one to the bridge electrodes 220. Furthermore, the relative positions of the bridge pads 450 in the bridge pad group 45 approximately match the relative positions of the bridge electrodes 220 in the bridge devices 20. This ensures that when the bridge devices 20 are mounted on the substrate 40 with the bridge electrodes 220 facing the substrate 40, each bridge electrode 220 is accurately coupled to the corresponding bridge pad 450. 9a, the four bridge pads 450 of the bridge pad group 45 are represented by "a," "b," "c," and "d," respectively, where bridge pads a, b, c, and d correspond to bridge electrodes A, B, C, and D, respectively, and therefore a line passing through bridge pads a and b intersects with a line passing through bridge pads c and d. Also, although only one bridge pad group 45 is provided on the substrate 40 shown in FIG. 9a, more bridge pad groups 45 may be provided on the substrate 40 in some other examples of this embodiment.

[0056] In this embodiment, the substrate 40 includes at least four chip pad groups 44, each of which serves as four vertices. The four chip pad groups 44 are connected at their ends to form a quadrilateral, such as a rectangle or a parallelogram. The bridge pad group 45 is located inside the quadrilateral. In FIG. 9a, the quadrilateral enclosed by the four chip pad groups 44 is enclosed by a thick dotted frame Q. However, those skilled in the art will understand that this is for ease of understanding and that the thick dotted frame Q is not visible in the actual product. Each bridge pad 450 in the bridge pad group 45 corresponds to one chip pad group 44 and is electrically connected to the corresponding chip pad in the chip pad group 44. For example, referring to FIG. 9b, the arrangement of the conductive layers within the substrate 40 is shown with a hatched pattern based on FIG. 9a. According to FIG. 9b, the electrical connection relationships among the external electrodes, chip pads, and bridge pads 450 on the substrate 40 are determined, and each bridge pad 450 is electrically connected to the closest chip pad.

[0057] Although the substrate 40 does not have a strict bifurcation before the light-emitting chip 30 and bridge device 20 are mounted on the substrate 40, it is understandable that the layout of the light-emitting chip 30 and bridge device 20 must be considered during the design phase for a substrate 40 used in combination with a flip-chip chip. Therefore, a "breakpoint bifurcation" is formed when the design of the substrate 40 is completed. After the light-emitting chip 30 and bridge device 20 are mounted on the breakpoint bifurcation, the breakpoint bifurcation can form a complete bifurcation. The breakpoint bifurcation has multiple chip pad groups 44 and one external electrode group. Two external electrodes of the external electrode group are located at both ends of the breakpoint bifurcation and are electrically connected to the two chip pads at the ends of the breakpoint bifurcation, respectively. For example, in FIG. 9b, the first external electrode 41a located in the upper left corner of the substrate 40 and the first external negative electrode 42a located in the lower right corner belong to the first external electrode group and, together with the two chip pad groups 44 located in the upper left and lower right corners, form a breakpoint bifurcation extending from the upper left to the lower right of the substrate 40. Therefore, the first external positive electrode 41a and the first external negative electrode 42a are electrically connected to the chip pads located in the upper left and lower right corners, respectively. The second external positive electrode 41b and the second external negative electrode 42b located in the upper right corner and the lower left corner of the substrate 40 belong to a second external electrode group, which, together with the two chip pad groups 44 located in the upper right and lower left corners, form a breakpoint branch extending from the upper right to the lower left of the substrate 40. Therefore, the second external positive electrode 41b and the second external negative electrode 42b are electrically connected to the chip pads located in the upper right and lower left corners, respectively. From Figures 9a, 9b, and 12a, it can be seen that the external electrodes are typically distributed around the edge of the substrate 40, and one external electrode corresponds to a chip pad group 44 closest to the edge of the substrate 40 and is electrically connected to one chip pad in that chip pad group 44, typically the closest chip pad in that chip pad group 44.

[0058] Those skilled in the art will understand that, because some of the chip pads on the substrate 40 need to be electrically connected to external electrodes via the circuitry of the substrate 40 itself, and some of the chip pads themselves need to be electrically connected to the bridge pads 450, in some examples of the present embodiment, the substrate 40 may integrate the chip pads and external electrodes electrically connected to each other into a large-area pad used for both electrical connection of the chip electrodes of the same light-emitting chip 30 and electrical connection to an external power source. Similarly, the chip pads and bridge pads 450 electrically connected to each other may also be integrated into a large-area pad used for both electrical connection of the chip electrodes of the same light-emitting chip 30 and electrical connection to the bridge electrode 220 of the bridge device 20.

[0059] The light emitting device 50 provided in this embodiment will be further described below. First, the light emitting device 50 using the flip-chip light emitting chip 30 will be described. Example 1

[0060] 11 shows a schematic diagram of a light-emitting device 50 formed by mounting a light-emitting chip 30 and a bridge device 20 on the substrate 40 of FIG. 11. In FIG. 11, light-emitting chips 30a of a first color temperature are mounted on both chip pad groups 44 at the upper left and lower right corners of the substrate 40, and these two light-emitting chips 30a of the first color temperature are connected in series by bridge electrode groups of the bridge device 20. Light-emitting chips 30b of a second color temperature are mounted on both chip pad groups 44 at the upper right and lower left corners of the substrate 40, and these two light-emitting chips 30b of the second color temperature are connected in series by another bridge electrode group of the bridge device 20. Example 2

[0061] The light emitting device 50 includes at least two light emitting chips 30 of a first color temperature, at least two light emitting chips 30 of a second color temperature, at least two light emitting chips 30 of a third color temperature, and at least two light emitting chips 30 of a fourth color temperature, and the bridge device 20 includes at least a first bridge device and a second bridge device, where the two light emitting chips 30 of the first color temperature are connected in series by a first bridge electrode group of the first bridge device, the two light emitting chips of the second color temperature are connected in series by a second bridge electrode group of the first bridge device, the two light emitting chips of the third color temperature are connected in series by a first bridge electrode group of the second bridge device, and the two light emitting chips of the fourth color temperature are connected in series by a second bridge electrode group of the second bridge device. 12a, for example, shows a schematic diagram of another light-emitting device 50, which includes 16 light-emitting chips 30, including a first color temperature light-emitting chip 30a and a second color temperature light-emitting chip 30b, as well as a third color temperature light-emitting chip 30c and a fourth color temperature light-emitting chip 30d. In FIG. 12a, the four color temperature light-emitting chips 30 respectively form four independent series branches, and the corresponding circuit principle schematic diagram is shown in FIG. 12b. Example 3

[0062] The 16 light-emitting chips 30 of the light-emitting device 50 in Figure 13a are divided into only two color temperatures, but in Figure 13a, the light-emitting chips 30 of each color temperature form two series branches connected in parallel, and only one group of external electrodes is installed on the substrate 40 for the light-emitting chips 30 of each color temperature, and a schematic diagram of the corresponding circuit principle is shown in Figure 13b.

[0063] Furthermore, as can be seen from FIG. 13a, the bridge device 20 is not limited to connecting light-emitting chips 30 that need to be spatially cross-connected, but can also electrically connect chip pads on a substrate 40 on which no light-emitting chips 30 are installed.

[0064] As can be seen from the above description, in the light-emitting device 50 using a flip-chip chip, the cross-connection between the light-emitting chips 30 does not need to be made through the substrate 40, which simplifies the structure of the substrate 40 and allows the substrate 40 to replace the conventional two-layer or multi-layer substrate with a single-layer substrate, thereby significantly reducing the design and production costs of the substrate 40.

[0065] It should be noted that most of the circuitry within the substrate 40 used in combination with the flip-chip chip is hidden within the substrate 40. In the above example of this embodiment, the conductive layers of the substrate 40 are shown with a hatched pattern to reflect the electrical connection relationships between the elements within the light-emitting device 50, but in an actual product, these conductive layers may be hidden within the base material and not be visible.

[0066] A light emitting device 50 using the face-up light emitting chip 30 will be described below. Example 4

[0067] In this example, when the light-emitting chip 30 is mounted on the substrate 40, the chip electrode faces the substrate 40, and the bridge device 20 is also mounted so that the bridge electrode 220 faces the substrate 40. Referring to FIGS. 14 and 15, the light-emitting device 50 shown in FIGS. 14 and 15 has 16 light-emitting chips 30 therein, some of which are light-emitting chips 30a with a first color temperature and the rest are light-emitting chips 30b with a second color temperature. In FIG. 14, the light-emitting chips 30a with a first color temperature form two series branches, and the light-emitting chips 30b with a second color temperature also form two series branches. In some examples of this embodiment, the light-emitting chips 30 with the same color temperature correspond to only one external electrode group. However, those skilled in the art will understand that in other examples, each series branch may have its own independent external electrode group. In FIG. 15, all the light-emitting chips 30a with a first color temperature are joined together to form a series branch, and all the light-emitting chips 30b with a second color temperature are joined together to form another series branch. The light-emitting device 50 shown in FIG. 14 uses a total of eight bridge devices 20, while the light-emitting device 50 shown in FIG. 15 uses a total of seven bridge devices 20, and the arrangements of the bridge devices 20 in the two light-emitting devices 50 are completely different. It was found that when used in combination with face-up light-emitting chips 30, there are no strict rules regarding the number and arrangement of bridge devices 20, and they can be flexibly determined according to the spatial direction of branching of the light-emitting device 50. The use of bridge devices 20 allows for free and flexible arrangement of the light-emitting chips 30 in the light-emitting device 50, allowing light-emitting chips 30 of different color temperatures to be arranged alternately in rows and columns of the chip array, achieving excellent light mixing effects while eliminating concerns about gold wire crossings and circuit shorts. This allows for separation of the circuit structure and the arrangement of the light-emitting chips 30 on the substrate 40, thereby improving the manufacturing flexibility of the light-emitting device 50. Example 5

[0068] 16, the light emitting device 50 is provided with 16 light emitting chips 30. These light emitting chips 30 include a light emitting chip 30a with a first color temperature, a light emitting chip 30b with a second color temperature, a light emitting chip 30c with a third color temperature, and a light emitting chip 30d with a fourth color temperature, and the light emitting chips 30 with four color temperatures respectively form four independent series branches. Example 6

[0069] In the light-emitting device 50 shown in Figure 17, the substrate is a bracket 60, which is specifically a dual-channel epoxy molding compound (EMC) bracket, and the bracket 60 has two external electrode groups. Within the bracket 60, the arrangement and connection relationship of the light-emitting chip 30 and the bridge device 20 are basically the same as those shown in Figure 14, so they will not be repeated here.

[0070] In some examples of this embodiment, the substrate 40 may not have an external electrode, and the external power source may be electrically connected directly to the light-emitting chip 30 at the end of the series branch or electrically connected to the bridge electrode 220 of the bridge device 20 at the end of the series branch. In this case, the substrate 40 may not have any circuitry installed and may only serve to mount the light-emitting chip 30 and the bridge device 20.

[0071] In some examples of this embodiment, a reflective layer may be provided on the surface of the substrate 40 of the light-emitting device 50 facing the light-emitting chip 30, thereby improving the light output efficiency of the light-emitting device 50. In the case of a light-emitting device 50 using a flip-chip chip, the substrate 40 is provided with external electrodes, chip pads, and bridge pads, and a reflective layer made of an insulating material may be provided to prevent the reflective layer from affecting the electrical relationship between these components. For example, the reflective layer may be formed of an insulating reflective adhesive. In a light-emitting device 50 using a face-up chip, the reflective layer may be formed of an insulating reflective adhesive or a highly reflective metal such as a reflective silver layer or a reflective aluminum layer.

[0072] In the above embodiments, the light emitting chips 30 are divided into a light emitting chip 30a having a first color temperature, a light emitting chip 30b having a second color temperature, a light emitting chip 30c having a third color temperature, a light emitting chip 30d having a fourth color temperature, etc. However, in some cases, all of the light emitting chips 30 mounted on the substrate 40 have the same epitaxial structure and epitaxial material, i.e., all of the light emitting chips 30 are identical. In the process of manufacturing the light emitting device 50, the light emitting chips 30 on the substrate 40 are COB-packaged using packaging adhesives of different color temperatures, thereby enabling the light emitting device 50 to emit light at different color temperatures. For example, if a light emitting chip 30 is required to emit light at a first color temperature in the design of the light emitting device 50, it can be packaged using a packaging adhesive of the first color temperature. Similarly, if a light emitting chip 30 is required to emit light at a second color temperature in the design of the light emitting device 50, it can be packaged using a packaging adhesive of the second color temperature. The same applies to other color temperatures, and therefore will not be repeated here. In some examples of this embodiment, the package adhesive may contain three primary color phosphors. By mixing the three primary color phosphors in different ratios, phosphor adhesives with different color temperatures can be obtained. Taking rare earth three primary color phosphors as an example, they include red, green, yellow, and blue powders. By mixing the four color powders in a certain ratio, different color temperatures (2700 to 6500 K) can be obtained. Furthermore, decreasing the phosphor content in the phosphor adhesive increases the color temperature, while increasing the phosphor content decreases the color temperature.

[0073] Of course, in some other examples of this embodiment, it is not excluded that the first color temperature light emitting chip 30a, the second color temperature light emitting chip 30b, the third color temperature light emitting chip 30c, and the fourth color temperature light emitting chip 30d have different color temperatures.

[0074] The LEDs provided in the above embodiments are applicable to various lighting fields. For example, they can be configured as backlight modules and applied to display backlighting (including backlight modules for terminals such as televisions, monitors, and mobile phones). Currently, they are applicable to backlight modules. In addition to display backlighting, they are also applicable to key backlighting, photography, home lighting, medical lighting, decoration, automotive, and transportation. When applied to key backlighting, they can be used as key backlighting light sources for keyed devices such as mobile phones, calculators, and keyboards. When applied to photography, they can be used as camera flashes. When applied to home lighting, they can be used as floor lamps, table lamps, luminaires, ceiling lamps, downlights, projection lamps, and the like. When applied to medical lighting, they can be used as operating lights, low-electromagnetic lighting lamps, and the like. When applied to decoration, they can be used as various decorative lamps such as various colored lamps, landscape lighting lamps, and advertising lamps. When applied to automotive, they can be used as car lights and vehicle indicator lights. When applied to transportation, they can be used as various traffic lights and various street lights. The above applications are merely a few of the examples illustrated in this embodiment. It should be understood that the applications of the LED of this embodiment are not limited to the several fields exemplified above.

[0075] It should be understood that the application of the present application is not limited to the above examples, and those skilled in the art can improve or modify it according to the above description, and all of these improvements and modifications fall within the scope of protection of the claims attached hereto.

Claims

1. A bridge device comprising: a mounting plate; and at least two bridge electrode groups disposed on the mounting plate, the bridge electrode groups being electrically isolated from each other; each bridge electrode group being composed of two bridge electrodes electrically connected to each other; the at least two bridge electrode groups having a first bridge electrode group and a second bridge electrode group; and a first straight line defined by the two bridge electrodes of the first bridge electrode group and a second straight line defined by the two bridge electrodes of the second bridge electrode group intersecting as projected lines on the mounting plate.

2. 2. The bridge device according to claim 1, wherein the mounting plate has an insulating layer and a conductive layer disposed on the insulating layer, the conductive layer having a first connection wiring and a second connection wiring, the first connection wiring being configured to connect two of the bridge electrodes of the first bridge electrode group, and the second connection wiring being configured to connect two of the bridge electrodes of the second bridge electrode group.

3. 3. The bridge device of claim 2, wherein the insulating layer comprises an unintentionally doped GaN layer and a growth base for growing the unintentionally doped GaN layer, the growth base being stacked on the unintentionally doped GaN layer, and the conductive layer and the growth base being located on opposite sides of the unintentionally doped GaN layer, respectively.

4. 3. The bridge device of claim 2, wherein the mounting plate further comprises a passivation layer, the passivation layer covering at least the side of the conductive layer away from the insulating layer, and the surface of the bridge electrode away from the mounting plate being exposed to the passivation layer.

5. 2. The bridge device of claim 1, wherein the mounting plate has a plurality of insulating layers and at least two conductive layers, the at least two conductive layers including a first conductive layer and a second conductive layer, the two being separated by at least one insulating layer, the two bridge electrodes of the first bridge electrode group being electrically connected to the first conductive layer via a first via, and the two bridge electrodes of the second bridge electrode group being electrically connected to the second conductive layer via a second via.

6. 6. The bridge device of claim 5, wherein the plurality of insulating layers comprises a base layer, a first unintentionally doped GaN layer, and a second unintentionally doped GaN layer arranged in a stacked manner, the first conductive layer being located between the base layer and the first unintentionally doped GaN layer, and the second conductive layer being located between the first unintentionally doped GaN layer and the second unintentionally doped GaN layer.

7. 2. The bridge device according to claim 1, wherein the two bridge electrodes of the first bridge electrode group and the two bridge electrodes of the second bridge electrode group are both located on the same surface of the mounting plate.

8. The bridge device described in claim 7, characterized in that the surface of the mounting plate on which the bridge electrodes are mounted has a rectangular outline, and each of the bridge electrodes of the first bridge electrode group and the second bridge electrode group is located at each of the four corners of the rectangular outline.

9. a substrate comprising: a base material; and a chip pad group and a bridge pad group disposed on the base material, wherein four of the chip pad groups are disposed surrounding one of the bridge pad groups; A substrate characterized in that the bridge pad group is configured to be electrically connected to the bridge device described in claim 1, the bridge pad group has four bridge pads that correspond one-to-one to the bridge electrodes, each of the chip pad groups has a chip pad that corresponds one-to-one to a chip electrode of a light-emitting chip, the chip pads are configured to be electrically connected to the corresponding chip electrode, and the bridge pads are configured to be electrically connected to the corresponding bridge electrode.

10. 10. The substrate of claim 9, further comprising at least two groups of external electrodes, each group of external electrodes being composed of two external electrodes, each of the external electrodes corresponding to one of the groups of chip pads, and each of the external electrodes being electrically connected to one of the chip pads of the corresponding group of chip pads.

11. 1. A light emitting device comprising: A substrate; A light-emitting chip; a bridge device according to claim 1; A light-emitting device characterized in that the light-emitting chip and the bridge device are both mounted on the substrate, and four of the light-emitting chips are arranged surrounding one of the bridge devices, two of which are connected in series by the first bridge electrode group of the bridge device, and the remaining two of which are connected in series by the second bridge electrode group of the bridge device.

12. The light-emitting device of claim 11, wherein the substrate is the substrate described in claim 9, the light-emitting chip has a flip-chip structure, the chip electrodes of the light-emitting chip are bonded to the chip pad group, and the bridge electrodes of the bridge device face the substrate and are bonded to the bridge pads on the substrate.

13. The light-emitting device of claim 11, characterized in that the light-emitting chip has a face-up structure, the bridge electrode of the bridge device faces the substrate, and the chip electrode of the light-emitting chip and the bridge electrode are electrically connected via a bonding wire.

14. 14. The light-emitting device of claim 13, wherein a metal reflective layer is provided on the surface of the substrate facing the light-emitting chip and the bridge device.

15. The light emitting chips connected in series by the first bridge electrode group are a first light emitting chip and a second light emitting chip of a first color temperature, and the light emitting chips connected in series by the second bridge electrode group are a third light emitting chip and a fourth light emitting chip of a second color temperature, a negative electrode of the first light emitting chip is electrically connected to one of the bridge electrodes of the first bridge electrode group, a positive electrode of the second light emitting chip is electrically connected to another of the bridge electrodes of the first bridge electrode group, and at least one of the positive electrode of the first light emitting chip and the negative electrode of the second light emitting chip is 12. The light-emitting device of claim 11, wherein the first light-emitting chip and the second light-emitting chip are electrically connected to another light-emitting chip of the same color temperature other than the first light-emitting chip and the second light-emitting chip, the negative electrode of the third light-emitting chip is electrically connected to one of the bridge electrodes of the second bridge electrode group, the positive electrode of the fourth light-emitting chip is electrically connected to another of the bridge electrodes of the second bridge electrode group, and at least one of the negative electrode of the third light-emitting chip and the negative electrode of the fourth light-emitting chip is electrically connected to another light-emitting chip of the same color temperature other than the third light-emitting chip and the fourth light-emitting chip.

16. 12. The light-emitting device of claim 11, wherein the light-emitting chips include at least two light-emitting chips of a first color temperature, at least two light-emitting chips of a second color temperature, at least two light-emitting chips of a third color temperature, and at least two light-emitting chips of a fourth color temperature; the bridge device includes at least a first bridge device and a second bridge device, wherein the two light-emitting chips of the first color temperature are connected in series by the first bridge electrode group of the first bridge device, the two light-emitting chips of the second color temperature are connected in series by the second bridge electrode group of the first bridge device, the two light-emitting chips of the third color temperature are connected in series by the first bridge electrode group of the second bridge device, and the two light-emitting chips of the fourth color temperature are connected in series by the second bridge electrode group of the second bridge device.

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