Continuous plasma substrate hole deposition device

Abstract

A continuous plasma substrate hole deposition device is provided. [Solution] A continuous plasma substrate hole film formation apparatus performs a film formation process on a through hole 210 in a substrate 200 to be processed, and includes a carry-in device, a film formation device 20, a first bias pressure control device 30, a second bias pressure control device 40, and an unloading device. The carry-in device and unloading device carry in and out the substrate 200 to be processed. The film formation device 20 has an upper electrode 21 and a lower electrode 22. The first bias pressure control device 30 and the second bias pressure control device 40 can output bias pressure to the upper electrode 21 and the lower electrode 22, respectively, and cause film formation ions P1 to move from the upper electrode 21 toward the lower electrode 22 and be introduced into the through hole 210 to form a film formation layer 300. The film formation layer 300 can be formed uniformly over the entire hole wall of the through hole 210, and this solves the problem of poor formation of the film formation layer 300 inside the through hole 210 that occurred in conventional manufacturing processes.

Description

[Technical Field]

[0001] The present invention relates to a film forming apparatus and a film forming method, and more particularly to a continuous plasma substrate hole film forming apparatus and a film forming method thereof. [Background technology]

[0002] In recent semiconductor-related technologies, surface treatment using plasma deposition is widely used to impart properties such as electrical conductivity, corrosion resistance, and resistance to electromagnetic interference (EMI) to the surface of the object being processed.

[0003] Conventional plasma film formation devices are primarily used to form a film layer on the surface of a workpiece. When the workpiece has a through-hole, for example, a deep hole such as a through silicon electrode (Through Silicon Type ia) or a through glass electrode (Through Glass Type ia), there is a problem in that plasma ions have difficulty reaching the depth of the hole. As a result, the film layer may not be formed sufficiently, the coverage may be reduced, and the film quality may be adversely affected. Summary of the Invention [Problem to be solved by the invention]

[0004] The prior art has the drawback that the film layer is not sufficiently formed, the coverage is reduced, and the film quality is adversely affected. [Means for solving the problem]

[0005] The present invention relates to a continuous plasma substrate hole film formation device that solves the problem that conventional plasma film formation devices have difficulty in making film formation ions reach the depths of through holes, resulting in incomplete film layers.

[0006] The continuous plasma substrate hole deposition device of this invention performs a film deposition process on through holes in a substrate to be processed, The continuous plasma substrate hole film forming apparatus includes a carry-in device, a film forming device, a first bias pressure control device, a second bias pressure control device, and an unloading device, the loading device loads a substrate to be processed; the film forming apparatus is in communication with the carry-in device and receives the substrate to be processed, the film forming apparatus has an upper electrode, a lower electrode, and a target material, the target material is placed between the upper electrode and the lower electrode and is in close proximity to the upper electrode, and the lower electrode carries the substrate to be processed; the first bias pressure control device is connected to the upper electrode, and the first bias pressure control device outputs a first bias pressure during a first pulse time in a circulation cycle to generate a plurality of film-forming ions from the target material; the second bias pressure control device is connected to the lower electrode, and the second bias pressure control device outputs a second bias pressure within a circulation period; The second bias pressure has a polarity opposite to that of the film-forming ions, so that the lower electrode attracts the film-forming ions from the upper electrode toward the lower electrode, thereby introducing the film-forming ions into the through-holes; The unloading device communicates with the side of the film forming device that is remote from the loading device, and receives and unloads the processed substrate.

[0007] A continuous plasma substrate hole deposition method according to one embodiment of the present invention is a method for depositing a film on a through hole of a substrate to be processed using a continuous plasma substrate hole deposition apparatus, The continuous plasma substrate hole film forming method includes a substrate loading step, a film forming ion generating step, a film forming layer forming step, and a substrate unloading step, Substrate carrying step: carrying the substrate to be processed by a carrying device and supplying it to a film forming device communicating with the carrying device, the film forming device having an upper electrode, a lower electrode, and a target material, the target material being placed between the upper electrode and the lower electrode and being close to the upper electrode, the substrate to be processed being carried into the film forming device and contacting the lower electrode, a film-forming ion generating step of controlling a first bias pressure control device to apply a first bias pressure to the upper electrode during a first pulse time of the circulation cycle, thereby generating film-forming ions from the target material; Film-forming layer forming step: controlling the second bias pressure control device, and applying a second bias pressure of opposite polarity to the film-forming ions to the lower electrode within the circulation cycle time, thereby moving the film-forming ions from the upper electrode to the lower electrode, forming a film in the through-hole, and forming a film layer; Substrate unloading step: After the processing is completed, the substrate to be processed is transported to an unloading device that communicates with the film forming device and unloaded.

[0008] As a result, in this invention, by controlling the bias pressure using the first bias pressure control device and the second bias pressure control device, the film-forming ions acquire sufficient energy to move to the substrate to be processed, and the film-forming ions can reach deep inside the through-hole, so that the film-forming layer can be formed uniformly on the hole wall of the entire through-hole, and this improves the problem in the prior art of incomplete film-forming inside the through-hole during the processing process. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic diagram illustrating the layout of a continuous plasma substrate hole deposition apparatus according to an embodiment of the present invention; [Figure 2] 1 is a structural diagram of a film deposition apparatus according to an embodiment of the present invention, illustrating inert ions moving toward and colliding with a target material; [Figure 3] 1 is a structural diagram of a film deposition apparatus according to an embodiment of the present invention, showing how film deposition ions move toward the lower electrode. [Figure 4] 3 is a schematic diagram illustrating the connection relationship between an upper electrode, a lower electrode, a first bias control device, and a second bias control device according to an embodiment of the present invention; [Figure 5] 3 is a schematic diagram illustrating the connection relationship between an upper electrode, a lower electrode, a first bias control device, and a second bias control device according to an embodiment of the present invention; [Figure 6] 4 is a voltage signal diagram illustrating the second bias signal being delayed relative to the first bias signal in accordance with an embodiment of the present invention; [Figure 7] 4 is a voltage signal diagram illustrating the first bias signal and the second bias signal being turned off simultaneously with a delay according to an embodiment of the present invention; [Figure 8]4 is a voltage signal diagram illustrating a second bias signal outputting a continuous horizontal signal according to an embodiment of the present invention; [Figure 9] 4 is a voltage signal diagram illustrating a first bias voltage signal outputting a third bias voltage during a third pulse period according to an embodiment of the present invention; [Figure 10] 2 is a flowchart of a continuous plasma substrate hole deposition method according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0010] In order to clearly explain the central idea of ​​the present invention as outlined above, the following description will be given with reference to specific embodiments. It should be noted in advance that the various different components shown in the embodiments are illustrated in proportions for the convenience of explanation, and are not drawn in accordance with the actual proportions of the components.

[0011] As shown in FIGS. 1 to 10, a continuous plasma substrate hole film forming apparatus 100 according to an embodiment of the present invention performs a film forming process on a through-hole 210 in a substrate 200 to be processed. The continuous plasma substrate hole film forming apparatus 100 includes a carry-in device 10, a film forming device 20, a first bias pressure control device 30, a second bias pressure control device 40, and an unloading device 50. The processing target substrate 200 is a silicon substrate, a glass substrate, a plastic substrate, a metal substrate, a composite mounting plate made of a combination of a plurality of materials, or the like.

[0012] The loading device 10 is used to load the substrate 200 to be processed into the device. The carry-in device 10 performs pre-treatment on the substrate 200 to be processed, and the pre-treatment includes treatments for improving the quality of film formation on the substrate 200 to be processed, such as degassing treatment and cleaning treatment.

[0013] The film forming device 20 communicates with the carry-in device 10 and receives the substrate 200 to be processed. The film forming apparatus 20 includes an upper electrode 21, a lower electrode 22, and a target material 23. The target material 23 is placed between the upper electrode 21 and the lower electrode 22 and is close to the upper electrode 21, and the lower electrode 22 carries the substrate 200 to be processed. A film formation space A is formed between the upper electrode 21 and the lower electrode 22. In one embodiment, other equipment such as a buffer device may be provided between the loading device 10 and the deposition device 20, which serves as a buffer before deposition. Therefore, the film forming device 20 communicates with the carry-in device 10 in order to move the substrate 200 to be processed, and they do not necessarily need to be physically connected without any gaps.

[0014] The first bias pressure control device 30 is connected to the upper electrode 21, and outputs a first bias pressure during a first pulse time T1 of the circulation period T, causing the target material 23 to generate a plurality of film-forming ions P1.

[0015] The second bias pressure control device 40 is connected to the lower electrode 22, and outputs a second bias pressure within the time of the circulation period T. Since the second bias pressure has the opposite polarity to the film-forming ions P1, the lower electrode 22 attracts the film-forming ions P1 from the upper electrode 21 toward the lower electrode 22, introducing the film-forming ions P1 into the through-hole 210 and causing them to adhere to the wall of the through-hole 210, forming the film-forming layer 300.

[0016] The carry-out device 50 communicates with the side of the film forming device 20 that is remote from the carry-in device 10, and receives and carries out the processed target substrate 200.

[0017] In one embodiment of the present invention, during the deposition process, the deposition space A is first supplied with a plurality of inert ions P2. Since the first bias pressure generated by the first bias pressure control device 30 has the opposite polarity to the inert ions P2, the upper electrode 21 moves the inert ions P2 toward the target material 23, and the inert ions P2 collide with the target material 23 to generate multiple film-forming ions P1. The inert ion P2 is argon ion (Ar + ), krypton ions (Kr +) or the like, and the film-forming ions P1 are cations that do not chemically react with the target material 23, such as copper ions (Cu + ), titanium ions (Ti + ) and zinc ions (Zn + ) or the like, which can form a film layer 300 on the processing target substrate 200.

[0018] After the inert ions P2 collide with the target material 23, the energy of the inert ions P2 is transferred to the film-forming ions P1, and the film-forming ions P1 acquire kinetic energy in the direction of the lower electrode 22. Furthermore, the film-forming ions P1 are stably moved and introduced into the through-holes 210 by the suction force generated by the second bias pressure.

[0019] In one embodiment of the present invention, the circulation period T is in the range of 230 μs to 2300 μs, and the first pulse time T1 is in the range of 30 μs to 300 μs. The first bias pressure is a negative bias pressure, and the bias value of the first bias pressure is set in the range of -800V to -2000V, preferably in the range of -1300V to -1500V. If the first bias pressure is higher than -800V (for example, -100V), the inert ions P2 cannot acquire sufficient kinetic energy, resulting in insufficient collisions with the target material 23, reducing the generation of film-forming ions P1 and reducing the film-forming efficiency of the substrate 200 to be processed. If the first bias voltage is lower than −2000 V (for example, −3000 V), the kinetic energy of the inert ions P2 becomes excessive, damaging the surface structure of the substrate 200 to be processed and adversely affecting the processing quality and yield.

[0020] In one embodiment of the present invention, if the substrate 200 to be processed is a conductor (eg, metal), the lower electrode 22 is in direct contact with the substrate 200 to be processed, and the second bias voltage can be output as a DC bias voltage. On the other hand, if the substrate 200 to be processed is a non-conductor (for example, glass or plastic), the lower electrode 22 cannot achieve a good processing effect with the plasma through the substrate 200 to be processed. For this reason, the second bias pressure is set to a high frequency type and bias pressure is applied. For example, there are high frequency bias sources such as RF bias (Radio Frequency Bias) and MF bias (Middle Frequency Bias). This allows the output type of the second bias pressure to be appropriately selected depending on the material type of the substrate 200 to be processed, while avoiding the problem of charge accumulation on the surface of the substrate 200 to be processed.

[0021] As also shown in FIG. 6, in one embodiment of the present invention, the second bias pressure control device 40 outputs the second bias pressure during the second pulse time T2, and the start point of the second pulse time T2 is delayed by a delay time DT from the start point of the first pulse time T1. In this way, in the present invention, first, the upper electrode 21 attracts the inert ions P2 toward the target material 23 by the first bias pressure, and then causes them to collide with the target material 23, thereby generating a certain amount of film-forming ions P1. Thereafter, the lower electrode 22 attracts the film-forming ions P1 by the delayed second bias pressure, and the efficiency with which the film-forming ions P1 move and enter the through-holes 210 can be improved. The time length of the second pulse time T2 can be equal to or shorter than the first pulse time T1. The delay time DT is in the range of 10 μs to 600 μs.

[0022] Furthermore, as also shown in FIG. 7, in one embodiment of the present invention, the end time of the second pulse time T2 can be the same as the end time of the first pulse time T1. This reduces the risk of overheating and damage caused by the lower electrode 22 being in an on state for a long period of time, and also reduces energy consumption.

[0023] As also shown in FIG. 8, in one embodiment of the present invention, the second bias pressure control device 40 may output the second bias pressure for the entire time of the circulation period T. As a result, the lower electrode 22, which has the opposite polarity to the film-forming ions P1, can constantly attract the film-forming ions P1 present in the film-forming space A and move them toward the lower electrode 22 throughout the entire circulation period T, thereby further improving the film-forming efficiency of the substrate 200 to be processed.

[0024] In one embodiment of the present invention, the second bias voltage is a negative bias voltage, and the bias voltage value of the second bias voltage is in the range of -200V to -1000V. If the second bias pressure is higher than −200 V (for example, −100 V), the film-forming ions P1 cannot acquire sufficient kinetic energy and cannot move smoothly to the depth of the through-hole 210, which may result in an incomplete film-forming layer 300. If the second bias voltage is lower than −1000 V (for example, −1500 V), the film-forming ions P1 will acquire excessive kinetic energy, which will damage the surface structure of the substrate 200 to be processed, adversely affecting the processing quality and yield.

[0025] Also, as shown in FIG. 9, in one embodiment of the present invention, the first bias pressure control device 30 outputs a third bias pressure at the third pulse time T3 of the circulation period T, and the third bias pressure has the same polarity as the film-forming ions P1, and pushes the film-forming ions P1 from the upper electrode 21 toward the lower electrode 22. As a result, the upper electrode 21 provides additional energy to the film-forming ions P1 that lack downward energy by the third bias pressure, and allows the film-forming ions P1 to move smoothly and enter the through-holes 210. As shown in FIG. 9, the third pulse time T3 follows the first pulse time T1, and within the circulation period T, the first bias pressure and the third bias pressure are repeatedly applied based on the first pulse time T1 and the third pulse time T3. The bias value of the third bias is in the range of 20V to 150V. The third pulse time T3 is in the range of 200 μs to 2000 μs.

[0026] As shown in Figures 4, 6 to 8, in one embodiment of the present invention, the first bias control device 30 includes a first switching member 31 and a first negative bias source 32, and the first switching member 31 is connected to the upper electrode 21 and a first bias signal control source (not shown) and can be switched between a first conductive state and a cut-off state. The first bias pressure signal control source outputs a first bias pressure signal C1 (see Figures 6 to 8) having a circulation period T, and switches the first switching member 31 to a first conductive state during a first pulse time T1, thereby causing the upper electrode 21 and the first negative bias pressure source 32 to be mutually conductive, and the upper electrode 21 receives the first bias pressure output by the first negative pressure source 32. The first bias signal control source can output a first bias signal C1, and switches the first switching member 31 to the cut-off state during a period other than the first pulse time T1 in the circulation cycle T, and sets the upper electrode 21 to the standby state. The first switching member 31 is an element having a function of switching a circuit path, and examples thereof include a switch and a logic gate.

[0027] Furthermore, as shown in FIGS. 5 and 9 together, in one embodiment of the present invention, the first bias pressure control device 30 further includes a positive bias pressure source 33. The first bias pressure signal control source outputs the first bias pressure signal C1, switches the first switching member 31 to the second conductive state during the third pulse time T3, and controls the upper electrode 21 to receive the third bias pressure from the positive bias pressure source 33.

[0028] In addition, in one embodiment of the present invention, the second bias control device 40 further includes a second switching member 41 and a second negative bias source 42 . The second switching member 41 is connected between the lower electrode 22 and a second negative bias pressure source 42, and the second switching member 41 is connected to a second bias pressure signal control source (not shown). The second bias signal control source outputs a second bias signal C2 (see Figure 6 or Figure 7), controls the second switching member 41 to be in a conductive state during the second pulse time T2, and controls the lower electrode 22 to receive the second bias pressure output by the second negative bias source 42. Alternatively, the second bias signal control source may output a continuous horizontal signal (see FIG. 8) to keep the second switching member 41 constantly in a conductive state, so that the lower electrode 22 is constantly subjected to the second negative bias.

[0029] As shown in FIGS. 2 and 3 together, in one embodiment, the present invention includes a transport device 60. The transport device 60 transports the substrate 200 to be processed, and thereby the substrate 200 to be processed is transferred between the carry-in device 10, the film forming device 20 and the carry-out device 50. The conveying device 60 is installed in each device in succession, and the conveying device 60 may be composed of elements such as a conveyor belt, rollers, and a support plate, which have the function of supporting and moving the substrate 200 to be processed, or the conveying device 60 may be in the form of a robot arm to achieve the purpose of moving the substrate 200 to be processed.

[0030] As also shown in FIG. 1, in one embodiment, a gate 70 can be installed between each of the adjacent carry-in apparatus 10, the film forming apparatus 20, and the carry-out apparatus 50. The gate 70 maintains the degree of vacuum and isolation within the film deposition apparatus 20 and controls the entry and exit of the substrate 200 to be processed into and from the film deposition apparatus 20 .

[0031] As shown in FIGS. 2 and 3, the embodiment of the present invention includes a lifting device 80. The lifting device 80 is connected to the side of the lower electrode 22 farther from the upper electrode 21, and controls the vertical height of the lower electrode 22 within the film formation space A, thereby bringing the substrate 200 to be processed closer to the upper electrode 21 during film formation, thereby positioning the substrate 200 to be processed in an optimal position to perform the film formation process.

[0032] As also shown in FIG. 10, the present invention further provides a continuous plasma substrate hole deposition method 400. The continuous plasma substrate hole deposition method 400 uses the continuous plasma substrate hole deposition apparatus 100 to perform a film deposition process on the through hole 210 of the substrate 200 to be processed, and the continuous plasma substrate hole deposition method 400 includes a substrate loading step S1, a film deposition ion generation step S2, a film deposition layer formation step S3, and a substrate unloading step S4. In each step, the movement of the substrate 200 to be processed is controlled via the transport device 60, and the substrate 200 to be processed is smoothly moved to the corresponding processing device in accordance with the processing order.

[0033] Substrate carrying step S1: The substrate 200 to be processed is carried by the carrying-in device 10 and supplied to the film forming device 20 that communicates with the carrying-in device 10. The substrate 200 to be processed comes into contact with the lower electrode 22 in the film forming device 20.

[0034] Film-forming ion generating step S2: The first bias pressure control device 30 is controlled to apply a first bias pressure to the upper electrode 21 during a first pulse time T1 of the circulation period T, thereby generating film-forming ions P1 from the target material 23.

[0035] Film layer formation step S3: The second bias pressure control device 40 is controlled to apply a second bias pressure of opposite polarity to the film formation ions P1 to the lower electrode 22 within the circulation period T, thereby moving the film formation ions P1 from the upper electrode 21 to the lower electrode 22, forming a film in the through hole 210, and forming a film layer 300. The film layer 300 is formed not only inside the through-hole 210 but also on the surface of the substrate 200 to be processed.

[0036] Substrate unloading step S4: After the processing, the processing target substrate 200 is transported to the unloading device 50 that communicates with the film forming device 20 and unloaded.

[0037] In one embodiment of the present invention, in the film-forming ion generation step S2, the upper electrode 21 has a polarity opposite to that of the inert ions P2 due to the first bias pressure, and the upper electrode 21 attracts the inert ions P2 toward the target material 23 and causes them to collide with each other, thereby generating film-forming ions P1.

[0038] In one embodiment of the present invention, the second bias pressure control device 40 can constantly output the second bias pressure during the cycle period T. Since the lower electrode 22 has a polarity opposite to that of the film-forming ions P1, the film-forming ions P1 present in the film-forming space A are continuously attracted toward the lower electrode 22 even during the film-forming ion generation step S2, thereby improving the film-forming efficiency of the substrate 200 to be processed.

[0039] To sum up, the present invention has the following advantages: 1. In the present invention, during plasma processing, the bias pressure is controlled by the first bias pressure control device 30 and the second bias pressure control device 40, allowing the film-forming ions P1 to acquire sufficient energy to move toward the substrate 200 to be processed, and the film-forming ions P1 can reach deep into the through-hole 210, so that the film-forming layer 300 can be uniformly formed on the hole wall of the entire through-hole 210. This solves the problem of incomplete film-forming layer 300 within the through-hole 210 during processing, which was a problem in the prior art. 2. The present invention can appropriately select the output type of the second bias pressure according to the material type of the substrate 200 to be processed, thereby avoiding the problem of charge accumulation on the surface of the substrate 200 to be processed. The present invention can appropriately select the output type of the second bias pressure according to the material type of the substrate 200 to be processed, thereby avoiding the problem of charge accumulation on the surface of the substrate 200 to be processed.

[0040] Each embodiment of the present invention is an example for illustrative purposes, and as will be understood by those skilled in the art, the various features, components and steps are not mutually exclusive and can be combined, modified or substituted as necessary without departing from the spirit of the present invention. Unless otherwise specified, one or more features of any embodiment may be freely combined with features of other embodiments to create new embodiments, and embodiments obtained by such feature combinations or modifications are also included within the scope of the present invention and are not intended to limit the scope of the present invention. [Explanation of symbols]

[0041] 100 Continuous plasma substrate hole deposition device, 200 substrates to be processed, 210 through holes, 300 deposited layers, 400 Continuous plasma substrate hole film formation method, 10 loading device, 20 Film deposition equipment, 21 upper electrode, 22 lower electrode, 23 target material, 30 first bias pressure control device, 31 first switching member, 32 first negative pressure source, 33 Positive bias source, 40 second bias pressure control device, 41 second switching member, 42 second negative pressure source, 50 Unloading equipment; 60 conveying device, 70 gates, 80 lifting device, S1: Board loading step, S2 film formation ion generation step; S3: film layer formation step; S4: Substrate removal step, A deposition space, T circulation period, DT delay time, T1 first pulse time, T2 second pulse time, T3 Third pulse time, C1 First bias pressure signal, C2 Second bias pressure signal, P1 film formation ion, P2 inert ion.

Claims

1. A continuous plasma substrate hole film formation device that performs a film formation process on a through hole of a processing target substrate, The continuous plasma substrate hole film forming apparatus includes a carry-in device, a film forming device, a first bias pressure control device, a second bias pressure control device, and a carry-out device, the loading device is used to load the substrate to be processed into the device; the film formation device is in communication with the carry-in device and receives the substrate to be processed, the film formation device has an upper electrode and a lower electrode, a target material is placed between the upper electrode and the lower electrode and is close to the upper electrode, and the lower electrode carries the substrate to be processed; the first bias pressure control device is connected to the upper electrode, and the first bias pressure control device outputs a first bias pressure during a first pulse time in a circulation cycle to generate a plurality of film-forming ions from the target material; the second bias pressure control device is connected to the lower electrode, and the second bias pressure control device outputs a second bias pressure within the circulation period, the second bias pressure having a polarity opposite to that of each of the film-forming ions, and attracting the film-forming ions and moving them from the upper electrode toward the lower electrode, so that the film-forming ions enter the through-holes; A continuous plasma substrate deposition apparatus, characterized in that the unloading device is connected to the side of the deposition apparatus away from the loading device, and receives and unloads the processed substrate.

2. 2. The continuous plasma substrate hole deposition apparatus according to claim 1, wherein the first bias pressure is a negative bias pressure, the bias pressure value of the first bias pressure is in the range of -800V to -2000V, and the first pulse time is in the range of 30 μs to 300 μs.

3. 2. The continuous plasma substrate hole film forming apparatus according to claim 1, wherein the second bias voltage is a high frequency bias voltage output, and the bias voltage value is in the range of -200V to -1000V.

4. 2. The continuous plasma substrate hole deposition apparatus of claim 1, wherein the second bias pressure control device outputs the second bias pressure during a second pulse time, and the start point of the second pulse time is delayed by a delay time from the start point of the first pulse time.

5. 5. The continuous plasma substrate hole deposition apparatus according to claim 4, wherein the delay time is in the range of 10 μs to 600 μs.

6. 5. The continuous plasma substrate hole forming apparatus according to claim 4, wherein the end point of the second pulse time is the same as the end point of the first pulse time.

7. 2. The continuous plasma substrate hole deposition apparatus according to claim 1, wherein the second bias pressure control device outputs the second bias pressure for the entire time of the circulation cycle.

8. the first bias pressure control device outputs a third bias pressure during a third pulse time of the circulation cycle; the third bias pressure has the same polarity as each of the film-forming ions, and pushes and moves each of the film-forming ions from the upper electrode toward the lower electrode; 2. The continuous plasma substrate hole deposition apparatus according to claim 1, wherein the third pulse time is set subsequent to the first pulse time.

9. the third bias pressure is a positive bias pressure, and the bias value of the third bias pressure is in the range of 20 V to 150 V; 9. The continuous plasma substrate hole deposition apparatus according to claim 8, wherein the third pulse time is in the range of 200 μs to 2000 μs.

10. The continuous plasma substrate hole deposition apparatus further includes an elevator device, the lifting device is connected to the lower electrode on a side farther from the upper electrode, 2. The continuous plasma deposition apparatus for forming a film on a substrate according to claim 1, wherein the vertical height of the lower electrode within the deposition apparatus is controlled.

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