Plasma processing method and plasma processing apparatus

Abstract

To provide a technique for improving temperature controllability of a substrate to be placed on a substrate support portion.SOLUTION: A plasma processing method using a plasma processing apparatus equipped with a base, a substrate support portion having a substrate support surface for supporting a substrate, a heater capable of adjusting the temperature of the substrate support surface, a temperature sensor for measuring the temperature of the substrate support surface, a power adjustment unit for adjusting electric power to be supplied to the heater, and a controller, includes steps of: setting the set temperature of the substrate support surface to a first temperature; measuring a first power to be supplied to the heater by the power adjustment unit before generating the plasma; measuring a second power to be supplied to the heater by the power adjustment unit after the plasma is generated; calculating the amount of heat input from the plasma based on the first power and the second power; and correcting the first temperature to a second temperature based on the calculated amount of input heat and the thermal resistance between the substrate support portion and the temperature sensor.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing method and a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a mounting table including a support member and a base. The support member has a mounting area having a heater and an outer peripheral area surrounding the mounting area. Patent Document 1 discloses that multiple heaters are also arranged in the mounting area, and that each heater is supplied with individually adjusted power, so that the temperature of multiple partial areas of the mounting area is individually adjusted. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-001688 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for improved temperature control of a substrate held on a substrate support. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a plasma processing method using a plasma processing apparatus including a base, a substrate support section disposed on the base and having a substrate support surface for supporting a substrate, a heater disposed inside the substrate support section and capable of adjusting a temperature of the substrate support surface, a temperature sensor for measuring the temperature of the substrate support surface, and a power adjustment section for adjusting power supplied to the heater, the method including the steps of: setting a set temperature of the substrate support surface to a first temperature; supplying power from the power adjustment section to the heater; and measuring the temperature of the substrate support surface measured by the temperature sensor before the plasma is generated. a step of measuring a first power supplied to the heater by the power adjustment unit when a temperature of the substrate support surface stabilizes at the first temperature; a step of measuring a second power supplied to the heater by the power adjustment unit when a temperature of the substrate support surface measured by the temperature sensor after generation of the plasma stabilizes at the first temperature; a step of calculating an amount of heat input from the plasma based on the first power and the second power; and a step of correcting the first temperature to a second temperature based on the calculated amount of heat input and a thermal resistance between the substrate support surface and the temperature sensor. Effect of the Invention

[0006] The present disclosure provides techniques for improved temperature control of a substrate held on a substrate support. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing apparatus according to this embodiment. [Diagram 2] FIG. 2 is a diagram for explaining the process of the plasma processing apparatus according to this embodiment. [Diagram 3] FIG. 3 is a diagram for explaining the flow of heat in the plasma processing apparatus according to this embodiment when no plasma is generated. [Figure 4] FIG. 4 is a diagram for explaining the flow of heat in the plasma processing apparatus according to this embodiment when plasma is being generated. [Diagram 5]FIG. 5 is a flow chart illustrating a plasma processing method in the plasma processing apparatus according to this embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially the same configurations are denoted by the same reference numerals to avoid redundant description. In order to facilitate understanding, the scale of each part in the drawings may differ from the actual scale.

[0009] In the directions of parallel, right angle, orthogonal, horizontal, vertical, up / down, left / right, etc., deviations are permitted to the extent that they do not impair the effects of the embodiment. The shape of the corners is not limited to right angles and may be rounded in an arch shape. Parallel, right angle, orthogonal, horizontal, and vertical may include approximately parallel, approximately right angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0010] An example of the configuration of a plasma processing apparatus will be described below with reference to FIG.

[0011] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one process gas into the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space. The sidewall 10a is grounded. The showerhead 13 and the substrate support 11 are electrically isolated from the plasma processing chamber 10 enclosure.

[0012] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In one embodiment, the main body 111 includes a base 115 and a substrate support 116. The substrate support 116 is, for example, an electrostatic chuck including a dielectric body and an electrode provided in the body. The substrate support 116 may also be a ring support that holds the ring assembly 112. The substrate support 116 is fixed to the base 115 via an adhesive layer 117. The base 115 includes a conductive member. The conductive member of the base 115 functions as a lower electrode. The substrate support 116 is disposed on the base 115. The upper surface of the substrate support 116 has a substrate support surface 111a. The substrate support 116 includes a heater 118 (see FIG. 2) capable of adjusting the temperature of the substrate support surface 111a therein. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may include a temperature adjustment module configured to adjust at least one of the substrate support 116, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. Furthermore, the substrate support 11 may include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a. The substrate support 11 includes a temperature sensor 150 for measuring the temperature of the substrate support surface 111a, located closer to the base 115 than the heater 118 of the substrate support unit 116. Note that, although the substrate support unit 116 has the substrate support surface 111a and the ring support surface 111b integrated together, the substrate support unit having the substrate support surface 111a and the ring support unit having the ring support surface 111b may be provided separately.

[0013] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. In addition to the shower head 13, the gas introduction unit may include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0014] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse a flow rate of the at least one process gas.

[0015] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to a conductive member of the substrate support 11 and / or a conductive member of the showerhead 13. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0016] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the conductive member of the substrate support 11 and / or the conductive member of the showerhead 13 via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 11 and / or the conductive member of the showerhead 13. The second RF generating unit 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated bias RF signal or signals are provided to the conductive members of the substrate support 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0017] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in the substrate support 116. In one embodiment, the second DC generator 32b is connected to a conductive member of the showerhead 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 13. In various embodiments, at least one of the first and second DC signals may be pulsed. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0018] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0019] The plasma processing apparatus 1 includes a control unit 2. The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various steps described herein. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0020] <Plasma Processing Method According to the Present Embodiment> A plasma processing method according to this embodiment will be described. Fig. 2 is a diagram for explaining processing by the plasma processing apparatus 1 according to this embodiment. Specifically, Fig. 2 shows a partial cross section of the substrate support 11 of the plasma processing apparatus 1.

[0021] The substrate support 11 includes a base 115 and a substrate support 116. The substrate support 116 is attached to the base 115 via an adhesive layer 117.

[0022] The base 115 includes a base body 115a made of metal, and a flow path 115c provided inside the base body 115a. A coolant such as brine adjusted to a set temperature flows through the flow path 115c.

[0023] The base 115 is adjusted to a set temperature by heat exchange with the coolant flowing through the flow passage 115c. The substrate support 116 attached to the base 115 is cooled by the base 115.

[0024] The substrate support 116 includes an internal heater 118. The heater 118 heats the substrate placed on the substrate support surface 111a.

[0025] The substrate support 11 includes a temperature sensor 150. The temperature sensor 150 may be disposed closer to the base 115 than the heater 118. The temperature sensor 150 measures the temperature of the substrate support surface 111a.

[0026] The heater 118 and the temperature sensor 150 are connected to the power adjustment unit 200. The power adjustment unit 200 adjusts the power supplied to the heater 118 so that the temperature detected by the temperature sensor 150 becomes the set temperature Tset set by the control unit 2. The power adjustment unit 200 controls the power supplied to the heater 118, for example, by PID (Proportional-Integral-Differential) control so that the temperature detected by the temperature sensor 150 becomes the set temperature Tset.

[0027] Here, the heat flow in the plasma processing apparatus 1 when plasma is not generated and when plasma is generated will be described.

[0028] Fig. 3 is a diagram for explaining the heat flow in the plasma processing apparatus 1 according to this embodiment when plasma is not generated. Fig. 4 is a diagram for explaining the heat flow in the plasma processing apparatus 1 according to this embodiment when plasma is generated.

[0029] 3 and 4 are diagrams in which the heat flow from the surface Se (substrate supporting surface 111a) of the substrate supporting portion 116 to the surface Sc of the flow passage 115c is modeled.

[0030] Between the surface Se of the substrate support 116 and the surface Sc of the flow path 115c, there are thermal resistance Rsh between the surface Se and the heater 118, thermal resistance Rht between the heater 118 and the temperature sensor 150, and thermal resistance Rtc from the temperature sensor 150 to the flow path 115c. The temperature of the surface Se is temperature Ts, the temperature of the heater 118 is temperature Th, the temperature of the temperature sensor 150 is temperature Tt, and the temperature of the flow path 115c, i.e., the temperature of the coolant flowing through the flow path 115c, is temperature Tc.

[0031] It is assumed that the thermal resistances Rsh, Rht, and Rtc are known from design values ​​or actual measurement values.

[0032] The coolant in flow path 115c is considered to have a sufficiently large heat capacity, so even if it absorbs the heat flowing in from heater 118, the temperature Tc can be considered to be constant.

[0033] 3, when a thermal equilibrium state is reached, the temperature Ts of the surface Se and the temperature Th of the heater 118 become equal. At this time, the power adjustment unit 200 adjusts the power supplied to the heater 118 so that the temperature Tt of the temperature sensor 150 becomes the set temperature.

[0034] The amount of heat Qhtr1 supplied from the heater 118 passes through the thermal resistances Rht and Rtc, and flows out from the surface Sc into the refrigerant.

[0035] 4, the amount of heat Qrf flows in from the surface Se. The amount of heat Qrf flows out from the surface Sc through the thermal resistances Rsh, Rht, and Rtc in this order. The power adjustment unit 200 adjusts the power supplied to the heater 118 so that the temperature Tt of the temperature sensor 150 becomes the set temperature.

[0036] If the set temperature of temperature sensor 150 is the same temperature Tt whether plasma is being generated or not, the amount of heat Qhtr2 is smaller than the amount of heat Qhtr1 by the amount of heat Qrf that flows in from the plasma. That is, the amount of heat Qhtr2 is expressed by Equation 1.

[0037]

number

[0038] In a state in which plasma is being generated, a temperature difference ΔT (Kelvin) is generated between the temperature Ts of the surface Se and the temperature Tt of the temperature sensor 150, as shown in Equation 2.

[0039]

number

[0040] In addition, when plasma is not generated, a temperature difference ΔT0 (Kelvin) shown in Equation 3 occurs between the temperature Ts of the surface Se and the temperature Tt of the temperature sensor 150. However, since the thermal resistance Rht and the amount of heat Qhtr1 are known, it is possible to correct the temperature difference ΔT0.

[0041]

number

[0042] In the plasma processing method according to this embodiment, while plasma is being generated, the power supplied to the heater 118 is corrected so that the temperature of the surface Se becomes a desired temperature.

[0043] 5 is a flow chart for explaining the plasma processing method of the plasma processing apparatus 1 according to this embodiment. It is assumed that no plasma is generated at the start of processing.

[0044] First, the control unit 2 sets the set temperature Tset of the power adjustment unit 200, i.e., the set temperature Tset of the substrate support surface 111a, to a first temperature T1 (step S10). Next, the control unit 2 controls the power adjustment unit 200 to supply power from the power adjustment unit 200 to the heater 118 (step S20). After supplying power from the power adjustment unit 200 to the heater 118, the control unit 2 waits until the temperature measured by the temperature sensor 150 stabilizes at the first temperature T1, which is the set temperature Tset.

[0045] In addition, the determination that the temperature measured by temperature sensor 150 has become the first temperature T1 is not limited to the case where the temperature measured by temperature sensor 150 exactly matches the first temperature T1, but also includes, for example, the case where the temperature measured by temperature sensor 150 is included in a control range that includes the first temperature T1.

[0046] When the temperature measured by the temperature sensor 150 becomes stable at the first temperature T1, the control unit 2 controls the power adjustment unit 200 to measure the first power P1 supplied by the power adjustment unit 200 to the heater 118 (step S30). Note that steps S10, S20, and S30 are performed in a state where no plasma is generated, i.e., before plasma is generated.

[0047] Next, the control unit 2 controls the gas supply unit 20 to supply a process gas and the power supply 30 to supply RF power, i.e., controls the plasma generation unit, to generate plasma (step S40). Then, the control unit 2 waits from the start of plasma generation until the temperature measured by the temperature sensor 150 stabilizes at the first temperature T1. When the temperature measured by the temperature sensor 150 stabilizes at the first temperature T1, the control unit 2 controls the power adjustment unit 200 to measure the second power P2 supplied by the power adjustment unit 200 to the heater 118 (step S50). Note that step S50 is executed in a state in which plasma is generated, i.e., after plasma generation.

[0048] Next, the control unit 2 calculates the amount of heat input Qin from the plasma per unit time while the plasma is being generated based on the first power P1 and the second power P2 (step S60). If the amount of heat generated by the heater 118 per unit time when the first power P1 is supplied to the heater 118 is the amount of heat Q1, and the amount of heat generated by the heater 118 per unit time when the second power P2 is supplied to the heater 118 is the amount of heat Q2, the amount of heat input Qin is expressed by Equation 4.

[0049]

number

[0050] A method of calculating the power of the heater 118 will be described. For example, it is assumed that the power adjustment unit 200 controls the power of the heater 118 by PWM (Pulse Width Modulation) control. First, a case where the power adjustment unit 200 supplies a DC voltage to the heater 118 will be described. If the heater resistance of the heater 118 is Rhtr (ohms), the DC voltage when power is supplied from the power adjustment unit 200 is Vsup (volts), the duty ratio when performing PWM control is p (%), and the heat amount per unit time output from the heater 118 is Phtr (watts), the power output from the heater 118 is expressed by Equation 5.

[0051]

number

[0052] Using the power calculated by Equation 5, the amount of heat generated by the heater 118 per unit time is calculated.

[0053] Next, a case where the power adjustment unit 200 supplies an AC voltage to the heater 118 will be described. If the heater resistance of the heater 118 is Rhtr (ohms), the amplitude of the AC voltage when power is supplied from the power adjustment unit 200 is Vsup2 (volts), the duty ratio when performing PWM control is p (%), and the amount of heat per unit time output from the heater 118 is Phtr (watts), the power output from the heater 118 is expressed by Equation 6. Note that cosθ represents the power factor.

[0054]

number

[0055] Using the power calculated by Equation 6, the amount of heat generated by the heater 118 per unit time is calculated.

[0056] In addition, if the set temperature Tset before correction is Tset1 (° C.) and the set temperature Tset after correction is Tset2 (° C.), the set temperature Tset2 is expressed by the following equation 7.

[0057]

number

[0058] The thermal resistance Rsh between the surface Se of the substrate support 116 and the heater 118 and the thermal resistance Rht between the heater 118 and the temperature sensor 150 are examples of the thermal resistance between the substrate support 116 and the temperature sensor 150.

[0059] Furthermore, when it is desired to control the temperature of a wafer placed on the substrate support surface 111a, the thermal resistance of the wafer is Rw (Kelvin / Watt), the contact thermal resistance between the wafer and the substrate support surface 111a is Rcon (Kelvin / Watt), and the corrected set temperature Tset is Tsetw (°C), then the set temperature Tsetw is expressed as in Equation 8.

[0060]

number

[0061] In addition, the thermal resistance Rsh between the surface Se of the substrate support portion 116 and the heater 118, the thermal resistance Rw of the wafer, the contact thermal resistance Rcon between the wafer and the substrate support surface 111a, and the thermal resistance Rht between the heater 118 and the temperature sensor 150 are examples of thermal resistance between the substrate W and the temperature sensor 150.

[0062] Although the above description was directed to the substrate support surface 111a, the same processing can be performed on the annular region (ring support surface) 111b that supports the annular member of the ring assembly 112, thereby adjusting the temperature of the annular member of the ring assembly 112 to the desired temperature.

[0063] For example, the annular region 111b of the main body 111 may include a heater (second heater), a power adjustment unit (second power adjustment unit) that supplies power to the heater (second heater), and a temperature sensor (second temperature sensor) that measures the temperature of the ring support surface 111b.

[0064] Further, although the above description does not refer to the number of heaters 118 and temperature sensors 150 that the substrate support part 116 has, there may be a plurality of heaters 118 and temperature sensors 150. That is, the substrate support part 116 may be configured to have a plurality of regions, with the heaters 118 and temperature sensors 150 provided for each of the plurality of regions. Similarly, in the case where the annular region 111b of the main body part 111 has a second heater, the annular region 111b may be configured to have a plurality of regions, with the second temperature sensor provided for each of the plurality of regions.

[0065] <Actions and Effects> According to the plasma processing apparatus 1 of the present disclosure, it is possible to improve the temperature controllability of the substrate placed on the substrate support while plasma is being generated.

[0066] The plasma processing method and plasma processing apparatus according to the present embodiment disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiments can be modified and improved in various forms without departing from the scope and spirit of the appended claims. The matters described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0067] 1. Capacitively coupled plasma processing equipment 2. Control section 10 Plasma Processing Chamber 11 Substrate support 20 Gas supply section 30 power supply 111 Main body 111a Board support surface 111a Central area (board support surface) 111b Annular region (ring support surface) 112 Ring Assembly 115 Foundation 115a Base body 115c Flow Channel 116 Substrate support 117 Adhesive layer 118 Heater 150 Temperature Sensor 200 Power adjustment section

Claims

1. The base and a substrate support portion disposed on the base and having a substrate support surface for supporting a substrate; a heater disposed inside the substrate support portion and capable of adjusting a temperature of the substrate support surface; a temperature sensor for measuring a temperature of the substrate support surface; a power adjustment unit that adjusts the power supplied to the heater; A plasma processing method using a plasma processing apparatus comprising: setting a temperature of the substrate support surface to a first temperature; supplying power from the power adjustment unit to the heater; measuring a first power supplied to the heater by the power adjustment unit when the temperature of the substrate support surface measured by the temperature sensor is stabilized at the first temperature before plasma is generated; measuring a second power supplied to the heater by the power adjusting unit when the temperature of the substrate support surface measured by the temperature sensor becomes stable at the first temperature after the plasma is generated; calculating a heat input from the plasma based on the first power and the second power; correcting the first temperature to a second temperature based on the calculated heat input amount and a thermal resistance between the substrate support part or the substrate and the temperature sensor; A plasma processing method comprising:

2. The substrate support includes a dielectric body and an electrode disposed within the body. The plasma processing method according to claim 1 .

3. The temperature sensor is disposed closer to the base than the heater. The plasma processing method according to claim 1 or 2.

4. the substrate support has a plurality of regions; The heater is provided for each of the plurality of regions. The plasma processing method according to claim 1 .

5. The temperature sensor is further provided for each of the plurality of regions. The plasma processing method according to claim 4 .

6. The power adjustment unit adjusts the power supplied to the heater so that the temperature measured by the temperature sensor becomes the set temperature. The plasma processing method according to claim 1 .

7. a ring support portion disposed on the base and having a ring support surface for supporting an annular member; a second heater capable of adjusting a temperature of the annular member; a second temperature sensor for measuring a temperature of the ring support surface; a second power adjustment unit that adjusts the power supplied to the second heater; Equipped with setting the temperature of the ring support surface to a third temperature; supplying power from the second power adjustment unit to the second heater; measuring a third power supplied to the second heater by the second power adjustment unit when the temperature of the ring support surface measured by the second temperature sensor is stabilized at the third temperature before the plasma is generated; measuring a fourth power supplied to the second heater by the second power adjusting unit when the temperature of the ring support surface measured by the second temperature sensor becomes stable at the third temperature after the plasma is generated; calculating a heat input from the plasma based on the third power and the fourth power; and correcting the third temperature to a fourth temperature based on the calculated heat input amount and a thermal resistance between the ring support portion or the annular member and the temperature sensor. The plasma processing method according to claim 1 .

8. The ring support is provided separately from the substrate support. The plasma processing method according to claim 7.

9. The base and a ring support portion disposed on the base and having a ring support surface for supporting an annular member; a second heater capable of adjusting a temperature of the annular member; a second temperature sensor for measuring a temperature of the ring support surface; a second power adjustment unit that adjusts the power supplied to the second heater; A plasma processing method using a plasma processing apparatus comprising: setting the temperature of the ring support surface to a third temperature; supplying power from the second power adjustment unit to the second heater; measuring a third power supplied to the second heater by the second power adjusting unit when the temperature of the ring support surface measured by the second temperature sensor is stabilized at the third temperature before plasma is generated; measuring a fourth power supplied to the second heater by the second power adjusting unit when the temperature of the ring support surface measured by the second temperature sensor becomes stable at the third temperature after the plasma is generated; calculating a heat input from the plasma based on the third power and the fourth power; correcting the third temperature to a fourth temperature based on the calculated heat input amount and a thermal resistance between the ring support or the annular member and the second temperature sensor; A plasma processing method comprising:

10. the second temperature sensor is disposed closer to the base than the second heater; The plasma processing method according to claim 7 .

11. The ring support has a plurality of regions; The second heater is provided for each of the plurality of regions. The plasma processing method according to any one of claims 7 to 10.

12. The second temperature sensor is further provided for each of the plurality of regions. The plasma processing method according to claim 11.

13. The base and a substrate support portion disposed on the base and having a substrate support surface for supporting a substrate; a heater disposed within the substrate support portion and capable of adjusting a temperature of the substrate support surface; a temperature sensor for measuring a temperature of the substrate support surface; a power adjustment unit that adjusts the power supplied to the heater; A plasma generating unit for generating plasma; A control unit; A plasma processing apparatus comprising: The control unit is setting a set point temperature of the substrate support surface to a first temperature; causing the power adjustment unit to supply power to the heater; causing the power adjustment unit to measure a first power supplied to the heater when the temperature of the substrate support surface measured by the temperature sensor is stabilized at the first temperature before the plasma is generated; after the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor becomes stable at the first temperature, the power adjustment unit measures a second power supplied to the heater; calculating a heat input from the plasma based on the first power and the second power; correcting the first temperature to a second temperature based on the calculated heat input amount and a thermal resistance between the substrate support part or the substrate and the temperature sensor. Plasma processing equipment.

14. The temperature sensor is disposed closer to the base than the heater. The plasma processing apparatus according to claim 13 .

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