Stripping composition for removing photoresist from semiconductor substrates - Patents.com

Abstract

The present disclosure relates to a composition comprising 1) one or more water-soluble polar aprotic organic solvents, 2) one or more quaternary ammonium hydroxides, 3) one or more carboxylic acids, 4) one or more Group II metal cations, 5) one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines, and 6) water, but no compounds containing three or more hydroxy groups. The composition can effectively strip positive or negative resist or resist residue from a semiconductor substrate, and is non-corrosive to bumps and underlying metallization materials (e.g., SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, etc.) on the semiconductor substrate.

Description

[Technical field]

[0001] The present disclosure relates generally to stripping compositions for removing photoresist (e.g., positive or negative photoresist) or photoresist residue from semiconductor substrates. In particular, the present disclosure relates to alkaline compositions that are effective for removing photoresist or photoresist residue after etching or plasma ashing processes. [Background technology]

[0002] In the production of integrated circuits, the flip-chip process known as the Controlled Collapse Chip Connection (C4) process, in which semiconductor elements such as IC chips and microelectromechanical systems (MEMS) are interconnected with external circuits by solder bumps deposited on the chip pads, is now very well established. Thick negative photoresists are commonly applied in the flip-chip or C4 process, and commercial resist strippers for thick negative resists are mainly formulations based on DMSO (dimethyl sulfoxide) or NMP (N-methylpyrrolidone) plus TMAH (tetramethylammonium hydroxide). However, those commercial resist strippers for thick negative resists may exhibit problems such as insufficient resist stripping, short bath life, and poor compatibility with metal substrates and bump compositions. In addition, foaming problems may occur in the decomposed photoresist, which may be generated by the decomposed photoresist or surfactants. Summary of the Invention

[0003] The present disclosure describes the development of a stripping composition suitable for devices containing bumps and metallization materials (e.g., SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, etc.). The inventors have unexpectedly discovered that the ability to effectively strip thick resists, either positive or negative, while being non-corrosive to bumps and underlying metallization materials (e.g., SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, etc.) can be achieved using the disclosed compositions. In fact, the disclosed compositions have been found to be effective in inhibiting etching of Cu and Al while maintaining excellent stripping and cleaning performance. Furthermore, the disclosed compositions exhibit compatibility with a wide range of materials and can effectively control foaming issues during the stripping process.

[0004] In some embodiments, the present disclosure provides: 1) one or more water-soluble polar aprotic organic solvents; 2) one or more quaternary ammonium hydroxides; 3) one or more carboxylic acids; 4) one or more Group II metal cations; 5) one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines, and 6) Water, A photoresist stripping composition is described that comprises (e.g., comprises, consists of, or consists essentially of), and is free of compounds containing three or more hydroxy groups.

[0005] In some embodiments, the present disclosure provides: 1) one or more water-soluble polar aprotic organic solvents; 2) one or more quaternary ammonium hydroxides; 3) one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines, and 4) water, A photoresist stripping composition is described that comprises (e.g., comprises, consists of, or consists essentially of), and is free of carboxylic acids, Group II metal cations, and compounds containing three or more hydroxy groups.

[0006] In some embodiments, the present disclosure relates to a photoresist stripping method, comprising contacting a semiconductor substrate containing photoresist or photoresist residue with a photoresist stripping composition of the present disclosure to remove the photoresist or photoresist residue. In some embodiments, the stripping method further comprises forming a semiconductor device (e.g., an integrated circuit device such as a semiconductor chip) from the semiconductor substrate obtained by the above method. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] In this disclosure, all percentages stated should be understood to be weight percent based on the total weight of the stripping composition unless otherwise specified. Ambient temperature is defined as about 16° C. to about 27° C. unless otherwise specified.

[0008] In this disclosure, a "water-soluble" substance (e.g., a water-soluble alcohol, ketone, ester, ether, etc.) refers to a substance that has a solubility of 0.5% by weight or more (e.g., 1% by weight or more, or 5% by weight or more) in water at 25°C.

[0009] In this disclosure, "polar aprotic solvent" refers to a solvent that does not have an acidic proton and has a relatively high dipole moment value (eg, 2.7 or greater).

[0010] In this disclosure, "Group II metal cation" refers to a cation of a metal in Group II of the periodic table.

[0011] In some embodiments, the present disclosure provides: 1) one or more water-soluble polar aprotic organic solvents; 2) one or more quaternary ammonium hydroxides; 3) one or more carboxylic acids; 4) one or more Group II metal cations; 5) one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines, and 6) Water, and is free of compounds containing three or more hydroxy groups (e.g., sugar alcohols such as glycerol).

[0012] In some embodiments, the stripping composition of the present disclosure includes one or more water-soluble polar aprotic organic solvents. The water-soluble polar aprotic organic solvent may be a single water-soluble solvent or a mixture of multiple water-soluble solvents in any ratio. Examples of solvents suitable for use in the present disclosure include, but are not limited to, dimethyl sulfoxide, sulfolane, dimethyl sulfone, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, gamma-butyrolactone, propylene carbonate, 1,3-dimethyl-2-imidazolidinone, and mixtures thereof. In some embodiments, the water-soluble polar aprotic organic solvent is dimethyl sulfoxide, sulfolane, gamma-butyrolactone, or N-methylpyrrolidone.

[0013] In some embodiments, the stripping composition of the present disclosure comprises the one or more water-soluble polar aprotic organic solvents in an amount of about 30% by weight or more (e.g., about 40% by weight or more, about 50% by weight or more, or about 60% by weight or more) and / or about 90% by weight or less (e.g., about 85% by weight or less, about 80% by weight or less, or about 75% by weight or less) of the stripping composition.

[0014] The stripping composition of the present disclosure optionally includes one or more alcohol solvents, such as water-soluble alcohol solvents. Classes of water-soluble alcohol solvents include, but are not limited to, alkanediols (including but not limited to alkylene glycols), glycols, alkoxyalcohols (including but not limited to glycol monoethers), saturated aliphatic monohydric alcohols, unsaturated non-aromatic monohydric alcohols, alcohols containing ring structures (e.g., low molecular weight alcohols), and mixtures thereof. The stripping composition may include a single alcohol solvent or a mixture of multiple alcohol solvents in any ratio. In some embodiments, the composition of the present disclosure does not include one or more alcohol solvents.

[0015] Examples of water-soluble alkanediols include, but are not limited to, 2-methyl-1,3-propanediol, 1,3-propanediol, 2,2-dimethyl-1,3-propanediol, 1,4-butanediol, 1,3-butanediol, 1,2-butanediol, 2,3-butanediol, pinacol, and alkylene glycols.

[0016] Examples of water-soluble alkylene glycols include, but are not limited to, ethylene glycol, propylene glycol, hexylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, and tetraethylene glycol.

[0017] Examples of water-soluble alkoxy alcohols include, but are not limited to, 3-methoxy-3-methyl-1-butanol, 3-methoxy-1-butanol, 1-methoxy-2-butanol, and water-soluble glycol monoethers.

[0018] Examples of water-soluble glycol monoethers include, but are not limited to, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono n-propyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono n-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 1-methoxy-2-propanol, 2-methoxy-1-propanol, 1-ethoxy-2-propanol, 2-ethoxy-1-propanol, propylene glycol mono-n-propyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol mono-n-propyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, ethylene glycol monobenzyl ether, and diethylene glycol monobenzyl ether.

[0019] Examples of water-soluble saturated aliphatic monohydric alcohols include, but are not limited to, methanol, ethanol, n-propyl alcohol, isopropyl alcohol, 1-butanol, 2-butanol, isobutyl alcohol, tert-butyl alcohol, 2-pentanol, t-pentyl alcohol, and 1-hexanol.

[0020] Examples of water-soluble unsaturated non-aromatic monohydric alcohols include, but are not limited to, allyl alcohol, propargyl alcohol, 2-butenyl alcohol, 3-butenyl alcohol, and 4-penten-2-ol.

[0021] Examples of water-soluble, low molecular weight alcohols containing a ring structure include, but are not limited to, tetrahydrofurfuryl alcohol, furfuryl alcohol, and 1,3-cyclopentanediol.

[0022] In some embodiments, the water-soluble alcoholic solvent is an alkoxy alcohol, tetrahydrofurfuryl alcohol, and a water-soluble alkanediol. In some embodiments, the water-soluble alcoholic solvent is 3-methoxy-3-methyl-1-butanol, 3-methoxy-1-butanol, 1-methoxy-2-butanol, a water-soluble glycol monoether, a water-soluble alkylene glycol, and tetrahydrofurfuryl alcohol. In some embodiments, the water-soluble alcoholic solvent is 3-methoxy-3-methyl-1-butanol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, ethylene glycol mono n-butyl ether, propylene glycol, hexylene glycol, and tetrahydrofurfuryl alcohol.

[0023] In some embodiments, when the photoresist stripping method described herein uses the heated photoresist stripping composition described herein, the water-soluble alcohol can have a boiling point higher than 110° C. for safety considerations.

[0024] In some embodiments, the stripping composition of the present disclosure comprises the one or more alcohol solvents in an amount of about 5% by weight or more (e.g., about 7% by weight or more, about 10% by weight or more, or about 12% by weight or more) and / or about 60% by weight or less (e.g., about 45% by weight or less, about 35% by weight or less, or about 25% by weight or less) of the stripping composition.

[0025] In some embodiments, the stripping composition of the present disclosure includes one or more quaternary ammonium hydroxides. In some embodiments, preferred quaternary ammonium hydroxides have the general formula [NR1R2R3R4] +OH, and R1, R2, R3, and R4 are each independently a linear, branched, or cyclic alkyl group optionally substituted with a hydroxyl group, a substituted or unsubstituted phenyl group, or a substituted or unsubstituted benzyl group (e.g., a benzyl group whose phenyl group is substituted or unsubstituted). The substituents on the phenyl group and on the phenyl group of the benzyl group are halogen, hydroxy, alkoxy, or alkyl. In some embodiments, the quaternary ammonium hydroxide is a tetraalkylammonium hydroxide. In some embodiments, the quaternary ammonium hydroxide is a tetraalkanolammonium hydroxide. In some embodiments, the quaternary ammonium hydroxide is a mixture of two or more kinds of quaternary ammonium hydroxides in any ratio.

[0026] In some embodiments, preferred quaternary ammonium hydroxides have the general formula [NR1R2R3R4] + OH, where R1, R2, R3, and R4 are each independently a C1 to C4 alkyl group, a hydroxyethyl group, a phenyl group, or a benzyl group.

[0027] Examples of suitable quaternary ammonium hydroxide compounds include, but are not limited to, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide, tetrabutylammonium hydroxide (TBAH), ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, methyltripropylammonium hydroxide, butyltrimethylammonium hydroxide, methyltributylammonium hydroxide, pentyltrimethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide (choline), (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (3-hydroxypropyl)triethylammonium hydroxide, tris-2-hydroxyethylammonium hydroxide, tetraethanolammonium hydroxide, phenyltrimethylammonium hydroxide, benzyltrimethylammonium hydroxide, and mixtures thereof.

[0028] In some embodiments, the stripping composition of the present disclosure comprises the one or more quaternary ammonium hydroxides in an amount of about 0.1 wt % or more (e.g., about 0.5 wt % or more, about 1 wt % or more, or about 1.5 wt % or more) and / or about 15 wt % or less (e.g., about 12 wt % or less, about 10 wt % or less, about 8 wt % or less, about 5 wt % or less, or about 3 wt % or less) of the stripping composition.

[0029] In some embodiments, the stripping composition of the present disclosure can optionally include one or more Group II metal cations. Examples of suitable Group II metal cations include Ca 2+ , Mg 2+ , Sr 2+ , and Ba 2+In some embodiments, the stripping compositions described herein include the Group II metal cations in an amount of about 5 ppm or more (e.g., about 7 ppm or more, about 8 ppm or more, or about 10 ppm or more) and / or about 40 ppm or less (e.g., about 35 ppm or less, about 25 ppm or less, about 20 ppm or less, or about 15 ppm or less). In other embodiments, the stripping compositions of the present disclosure can exclude (or not include) the above Group II metal cations while still being able to achieve the objectives of the stripping composition (e.g., providing excellent stripping and cleaning performance while inhibiting etching of Cu and Al).

[0030] Without wishing to be bound by theory, it is believed that a stripping composition containing solubilized Group II metal cations (e.g., calcium cations) can significantly reduce the etching rate of Al by the stripping composition, thereby allowing the stripping composition to inhibit Al etching during use. Furthermore, without wishing to be bound by theory, it is believed that because Group II metal compounds are generally not significantly soluble in the stripping compositions described herein, the amount of solubilized Group II metal cations in the stripping composition can be significantly increased by adding an agent capable of solubilizing Group II metal cations (e.g., by forming a complex with the Group II metal cations), thereby improving the Al etching inhibition performance of the stripping composition.

[0031] Thus, in some embodiments, the stripping composition of the present disclosure may optionally include one or more compounds that improve the solubility of the Group II metal cation in the water-soluble polar aprotic organic solvent. Such compounds include compounds having three or more hydroxy groups. In some embodiments, the compound is a sugar alcohol. Sugar alcohols contemplated for use in the compositions of the present disclosure include, but are not limited to, glycerol, sorbitol, mannitol, erythritol, arabitol, isomalt, lactitol, maltitol, xylitol, threitol, ribitol, galactitol, iditol, and inositol. In some embodiments, the sugar alcohol is glycerol or sorbitol.

[0032] In some embodiments, the stripping compositions described herein can include one or more compounds having three or more hydroxy groups in an amount of about 0.1% or more (e.g., about 0.5% or more, about 1% or more, or about 1.5% or more) and / or about 10% or less (e.g., about 8% or less, about 5% or less, or about 3% or less) by weight of the stripping composition. In another embodiment, the stripping compositions of the present disclosure can exclude (or not include) the above compounds having three or more hydroxy groups while still being able to achieve the objectives of the stripping composition (e.g., providing excellent stripping and cleaning performance while inhibiting etching of Cu and Al).

[0033] In some embodiments, the stripping composition described in the present disclosure may optionally include one or more carboxylic acids. Without wishing to be bound by theory, it is believed that the carboxylic acid may work in concert with a compound having three or more hydroxy groups to improve the solubility of the Group II metal cation in the water-soluble polar aprotic organic solvent. In some embodiments, examples of the one or more carboxylic acids contemplated for use in the composition of the present disclosure include monocarboxylic acids, dicarboxylic acids ( dicarboxylic acids), tricarboxylic acids, monocarboxylic α-hydroxy acids and β-hydroxy acids, dicarboxylic acids ( d The one or more carboxylic acids include, but are not limited to, alpha-hydroxy acids or beta-hydroxy acids of tricarboxylic acids, or alpha-hydroxy acids and beta-hydroxy acids of tricarboxylic acids. In some embodiments, the one or more carboxylic acids include citric acid, maleic acid, fumaric acid, lactic acid, glycolic acid, oxalic acid, tartaric acid, succinic acid, or benzoic acid. In some embodiments, the carboxylic acid is citric acid.

[0034] In some embodiments, the stripping compositions described herein can include one or more of the carboxylic acids in an amount of about 0.1 wt % or more (e.g., about 0.2 wt % or more, about 0.3 wt % or more, or about 0.4 wt % or more) and / or about 1.5 wt % or less (e.g., about 1.2 wt % or less, about 0.9 wt % or less, or about 0.6 wt % or less) of the stripping composition. In another embodiment, the stripping compositions of the present disclosure can exclude (or not include) the above carboxylic acids while still being able to achieve the objectives of the stripping composition (e.g., providing excellent stripping and cleaning performance while inhibiting etching of Cu and Al).

[0035] The stripping compositions of the present disclosure typically include water. In some embodiments, the water is deionized, ultra-pure, free of organic contaminants, and has a minimum resistivity of about 4 to about 17 megaohms. In some embodiments, the water has a resistivity of 17 megaohms or greater.

[0036] In some embodiments, the stripping composition of the present disclosure comprises water in an amount of about 1% or more (e.g., about 2.5% or more, about 5% or more, about 7% or more, or about 10% or more) and / or about 25% or less (e.g., about 20% or less, about 15% or less, or about 12.5% ​​or less) by weight of the stripping composition.

[0037] In some embodiments, the stripping compositions of the present disclosure include one or more copper corrosion inhibitors that are 6-substituted-2,4-diamino-1,3,5-triazines. The substituents on the 2,4-diamino-1,3,5-triazines are substituted or unsubstituted linear or branched C1 to C12 alkyl groups (e.g., methyl, hexyl, -CH2-aryl, CH2OR 100 , -CH2SR 100 , -CH2(NR 100 R 101 )), a substituted or unsubstituted C3 to C12 cycloalkyl group (e.g., cyclohexyl, methylcyclohexyl, or hydroxycyclohexyl), a substituted or unsubstituted aryl group (e.g., phenyl, methoxyphenyl, or naphthyl), -SCH2R 100 , -N(R 100 R 101 ), or an imidyl group, where R 100 and R 101 are each independently a substituted or unsubstituted, linear or branched C1 to C12 alkyl group optionally containing a nitrogen atom or an oxygen atom in the alkyl chain, a substituted or unsubstituted C3 to C12 cycloalkyl group optionally containing a nitrogen atom or an oxygen atom in the cycloalkyl ring, a substituted or unsubstituted aryl group, or R 100 and R 101 form a ring together with the atoms to which they are attached. Substituents on the alkyl and cycloalkyl groups include C1-C4 alkyl, C1-C4 alkoxy, hydroxyl, and substituted or unsubstituted aryl. In some embodiments, the substituents on the aryl group are electron donating (e.g., alkoxy groups) rather than electron withdrawing (e.g., halogens).

[0038] Examples of suitable 6-substituted-2,4-diamino-1,3,5-triazines are 6-methyl-2,4-diamino-1,3,5-triazine; 6-phenyl-2,4-diamino-1,3,5-triazine (benzoguanamine), 6-phenyl-2,4-diamino-1,3,5-dimethyltriazine; 1,3,5-triazine-2,4-diamine, 6-[2-(2-furanyl)ethyl]-; 1,3,5-triazine-2,4-diamine, 6-[(hexahydro-1-methylpyrrolo[3,4-c]pyrrol-2(1H)-yl)methyl]-; 1,3,5-triazine-2,4-diamine, 6-[(hexahydro-1-methylpyrrolo[3,4-c]pyrrol-2(1H)-yl)methyl]-; Azine-2,4-diamine, 6-[[(3-aminobutyl)thio]methyl]-;1,3,5-triazine-2,4-diamine, 6-(4,4-difluorocyclohexyl)-;1,3,5-triazine-2,4-diamine, 6-[(3-chlorophenyl)methyl]-;1,3,5-triazine-2,4-diamine, 6-[(phenylthio)methyl]-;1,3,5-triazine-2,4-diamine, 6-[(tetrahydro-2H-pyran-2-yl)methyl]-;2-(4,6-diamino-1,3,5-triazin-2-yl)-4-fluoro -Phenol;1,3,5-triazine-2,4-diamine, 6-(1-ethylcyclopentyl)-;1,3,5-triazine-2,4-diamine, 6-[[4-(diphenylmethyl)-1-piperazinyl]methyl]-;9-Acridinecarboxylic acid, 1,2,3,4-tetrahydro-4-[(4-methoxyphenyl)methylene]-, (4,6-diamino-1,3,5-triazin-2-yl)methyl ester;1H-Benz[de]isoquinoline-1,3(2H)-dione, 2-[[(4,6-diamino-1,3,5-triazin-2-yl)a amino]methyl]-;9-Acridinecarboxylic acid, 2-(1,1-dimethylpropyl)-1,2,3,4-tetrahydro-, (4,6-diamino-1,3,5-triazin-2-yl)methyl ester;1,3,5-triazine-2,4,6-triamine, N2-[2-[(7-chloro-4-quinolyl)amino]ethyl]-;1,3,5-triazine-2,4-diamine, 6-[[4-(1-methylethyl)phenoxy]methyl]-;1,3,5-triazine-2,4-diamine, 6-[[3-(trifluoromethyl)phenoxy]methyl]-;1,3,5-Triazine-2,4-diamine, 6-[[(tetrahydro-2H-pyran-2-yl)methyl]thio]-;N-cyclohexyl-2-[(4,6-diamino-1,3,5-triazin-2-yl)thio]-propanamide;3-chloro-4-[(4,6-diamino-1,3,5-triazin-2-yl)methoxy]-5-methoxy-benzonitrile;Benzeneacetic acid, 3-methoxy-,(4,6-diamino-1,3,5-triazin-2-yl)methyl ester;1,3,5-triazine-2,4-diamine, 6-[3-(1-pyrrolidinyl)phenyl]-; 1,3,5-triazine-2-octanenitrile, 4,6-diamino-; s-triazine-2-butyronitrile, 4,6-diamino-; 1,3,5-triazine-2-propanoic acid, 4,6-diamino-; 1,3,5-triazine-2-methanethiol, 4,6-diamino-; benzamide, N-(4,6-diamino-1,3,5-triazin-2-yl)-4-hydroxy-; and 1,3,5-triazine-2,4-diamine, 6-[(methylthio)methyl]-.

[0039] In some embodiments, the stripping composition of the present disclosure comprises the one or more copper corrosion inhibitors in an amount of about 0.01 wt % or more (e.g., about 0.05 wt % or more, about 0.1 wt % or more, or about 0.5 wt % or more) and / or about 10 wt % or less (e.g., about 7 wt % or less, about 5 wt % or less, or about 2 wt % or less) of the stripping composition.

[0040] In some embodiments, the stripping composition of the present disclosure optionally includes an antifoaming surfactant. Examples of suitable antifoaming surfactants include polysiloxanes (e.g., polydimethylsiloxanes), polyethylene glycol methyl ether polymers, ethylene oxide / propylene oxide copolymers, tetramethyldecyne diol, polyethylene glycol alkynyl ether polymers (e.g., products obtained by reacting polyethylene glycol with acetylenic diols), and glycidyl ether-capped acetylenic diol ethoxylates (e.g., those described in U.S. Patent No. 6,717,019, which is incorporated herein by reference). Examples of commercially available antifoaming surfactants include Surfynol 440, Surfynol 104, Surfynol MD-20, Troisol S366, Coastal 1017F, Aldo LF, Dow DB-100, and Dow DSP. In some embodiments, the antifoaming surfactant is Surfynol MD-20, Surfynol 104, and Troisol S366. In some embodiments, the compositions of the present disclosure do not include an antifoam surfactant.

[0041] In some embodiments, the stripping composition of the present disclosure comprises the at least one antifoaming surfactant in an amount of about 0.01 wt % or more (e.g., about 0.03 wt % or more, about 0.05 wt % or more, or about 0.1 wt % or more) and / or about 3 wt % or less (e.g., about 2 wt % or less, about 1 wt % or less, or about 0.5 wt % or less) of the stripping composition.

[0042] Additionally, in some embodiments, the stripping compositions of the present disclosure can optionally include additional additives, such as pH adjusters (e.g., organic acids, inorganic acids, and organic bases), preservatives, chelating agents, surfactants, organic solvents (e.g., glycol diethers), and biocides.

[0043] In some embodiments, the stripping compositions of the present disclosure may specifically exclude one or more of the following ingredients, in any combination if more than one, including, for example, the specific ingredients listed above: polymers, oxygen scavengers, amidoximes, oxidizers (e.g., peroxides, oxoammonium compounds, inorganic oxidizers, and peracids), abrasives (e.g., silica or alumina), fluoride-containing compounds, amines, alkali and alkaline earth metal bases (e.g., NaOH, KOH, magnesium hydroxide, calcium hydroxide, and LiOH), metal halide compounds, phosphinic acids, tetrahydrofurfuryl alcohol, glycols, furanyl alcohols, glycerin, sugars, aryl ethers, N-hydroxyformamides, alkanolamines, N-alkylalkanolamines, sulfonated polymers, metal sulfonates, hydroxylamines, 2-aminobenzothiazoles, thiobenzotriazoles, sulfonated polyesters, urea compounds, silicate bases, silane ... the like; tetrazolium salts; boric acid and salts or derivatives of boric acid; benzimidazoles; phenolic compounds not containing triazoles; chelating agents; buffers; azoles (e.g., diazoles, triazoles, or tetraazoles); salts (e.g., sulfates, sulfonates, halide salts (e.g., chloride salts), nitrates, acetates, phosphates, and metal salts such as metal halides, potassium salts (e.g., potassium nitrate), sodium salts, and silver salts); and corrosion inhibitors other than those for Cu or Al described herein.

[0044] In some embodiments, the stripping composition of the present disclosure comprises, consists of, or consists essentially of: (1) about 30% by weight or more (e.g., about 40% by weight or more, about 50% by weight or more, or about 60% by weight or more) and / or about 90% by weight or less (e.g., about 85% by weight or less, about 80% by weight or less, or about 75% by weight or less) of one or more water-soluble polar aprotic organic solvents (e.g., DMSO); (2) optionally, about 5% by weight or more (e.g., about 7% by weight or more, about 10% by weight or more, or about 12% by weight or more) and / or about 60% by weight or less (e.g., about 45% by weight or less, about 35% by weight or less, or about 25% by weight or less) of one or more alcohol solvents; (3) about 0.1 wt.% or more (e.g., about 0.5 wt.% or more, about 1 wt.% or more, or about 1.5 wt.% or more) and / or about 15 wt.% or less (e.g., about 12 wt.% or less, about 10 wt.% or less, about 8 wt.% or less, about 5 wt.% or less, or about 3 wt.% or less) of one or more quaternary ammonium hydroxides (e.g., TMAH); (4) about 1% or more by weight (e.g., about 2.5% or more by weight, about 5% or more by weight, about 7% or more by weight, or about 10% or more by weight) and / or about 25% or less by weight (e.g., about 20% or less by weight, about 15% or less by weight, or about 12.5% ​​or less by weight) water; (5) about 0.01 wt % or more (e.g., about 0.05 wt % or more, about 0.1 wt % or more, or about 0.5 wt % or more) and / or about 10 wt % or less (e.g., about 7 wt % or less, about 5 wt % or less, or about 2 wt % or less) of one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines (e.g., 6-phenyl-2,4-diamino-1,3,5-triazine); (6) optionally, about 0.01 wt. % or more (e.g., about 0.03 wt. % or more, about 0.05 wt. % or more, or about 0.1 wt. % or more) and / or about 3 wt. % or less (e.g., about 2 wt. % or less, about 1 wt. % or less, or about 0.5 wt. % or less) of one or more antifoaming surfactants (e.g., polyethylene glycol alkynyl ether polymers such as Surfynol MD-20); (7) Optionally, about 5 ppm or more (e.g., about 7 ppm or more, about 8 ppm or more, or about 10 ppm or more) and / or about 40 ppm or less (e.g., about 35 ppm or less, about 25 ppm or less, about 20 ppm or less, or about 15 ppm or less) of one or more Group II metal cations (e.g., Ca 2+ ); (8) optionally, about 0.1% or more (e.g., about 0.5% or more, about 1% or more, or about 1.5% or more) and / or about 10% or less (e.g., about 8% or less, about 5% or less, or about 3% or less) by weight of one or more compounds having three or more hydroxy groups (e.g., glycerol); (9) Optionally, about 0.1 wt. % or more (e.g., about 0.2 wt. % or more, about 0.3 wt. % or more, or about 0.4 wt. % or more) and / or about 1.5 wt. % or less (e.g., about 1.2 wt. % or less, about 0.9 wt. % or less, or about 0.6 wt. % or less) of one or more carboxylic acids (e.g., citric acid).

[0045] The stripping composition of the present disclosure is usually alkaline. In some embodiments, the pH of the stripping composition of the present disclosure is about 13 or more (e.g., about 13.5 or more, or about 14 or more). Without wishing to be bound by theory, it is believed that the alkaline nature of the stripping composition facilitates the removal of photoresist on semiconductor substrate.

[0046] One embodiment of the present disclosure is a method for stripping or removing photoresist from a semiconductor substrate. The method includes contacting a semiconductor substrate containing photoresist or photoresist residue with a stripping composition described herein for a suitable time and at a temperature sufficient to remove the photoresist or photoresist residue from the semiconductor substrate surface. The method may further include rinsing the semiconductor substrate with a rinse solvent after the contacting step and / or drying the semiconductor substrate after the rinsing step. In some embodiments, the method does not substantially remove Cu or Al from the semiconductor substrate.

[0047] In some embodiments, the photoresist stripping method comprises the steps of: (A) providing a semiconductor substrate having a photoresist coating or photoresist residue; (B) contacting the semiconductor substrate with a stripping composition described herein to remove the photoresist coating or the photoresist residue; (C) rinsing the semiconductor substrate with a suitable rinsing solvent; (D) optionally drying the semiconductor substrate by any suitable means capable of removing the rinsing solvent without compromising the integrity of the semiconductor substrate, in some embodiments, the stripping method further comprises forming a semiconductor device (e.g., an integrated circuit device such as a semiconductor chip) from the semiconductor substrate obtained by the method.

[0048] The semiconductor substrate that is stripped in this method has one or more photoresists (e.g., positive or negative photoresists) that need to be removed. Semiconductor substrates are typically made of silicon, silicon germanium, III-V compounds such as GaAs, or combinations thereof. The semiconductor substrate may further include additional exposed integrated circuit structures such as interconnect features such as metal lines and dielectric materials. Metals and alloys used in interconnect features include, but are not limited to, aluminum, aluminum alloyed with copper, copper, titanium, tantalum, cobalt, nickel, silicon, polysilicon titanium nitride, tantalum nitride, tin, tungsten, SnAg, SnAg / Ni, CuNiSn, CuCoCu, and CoSn. The semiconductor substrate may include layers of dielectric interlayers, silicon oxide, silicon nitride, silicon carbide, titanium oxide, and carbon doped silicon oxide.

[0049] The semiconductor substrate can be contacted with the stripping composition by any suitable means, such as, for example, placing the stripping composition in a tank and immersing and / or submerging the semiconductor substrate in the stripping composition, spraying the stripping composition onto the semiconductor substrate, flowing the stripping composition onto the semiconductor substrate, or combinations thereof, In some embodiments, the semiconductor substrate is immersed in the stripping composition.

[0050] The stripping compositions of the present disclosure can be effectively used at temperatures up to about 90° C. (e.g., from about 25° C. to about 80° C., from about 30° C. to about 60° C., or from about 40° C. to about 60° C.). For safety reasons, the maximum temperature is usually well below the flash point of the solvent used.

[0051] Similarly, the stripping time can vary widely depending on the specific stripping method, temperature, and stripping composition used. If stripping is performed by a dipping batch-type process, a suitable time range is, for example, up to about 60 minutes. In some embodiments, a suitable time range for a batch-type process is from about 1 minute to about 60 minutes (e.g., from about 3 minutes to about 20 minutes, or from about 4 minutes to about 15 minutes).

[0052] Stripping times for single wafer processes can range from about 10 seconds to about 5 minutes (e.g., from about 15 seconds to about 4 minutes, from about 15 seconds to about 3 minutes, or from about 20 seconds to about 2 minutes). In some embodiments, one or more applications of the stripping composition can occur. The amount of stripping composition used in single wafer processes is typically sufficient to completely cover the substrate and will depend on the size of the substrate and the surface tension of the stripping composition.

[0053] Mechanical agitation means may be used to further enhance the stripping performance of the stripping composition of the present disclosure. Examples of suitable agitation means include circulating the stripping composition on the substrate, pouring or spraying the stripping composition on the substrate, and ultrasonic or megasonic agitation during the stripping process. The orientation of the semiconductor substrate with respect to the ground may be at any angle. In some embodiments, a horizontal orientation or a vertical orientation is suitable.

[0054] The stripping composition of the present disclosure can be used in stripping tools known to those skilled in the art. One of the important advantages of the stripping composition of the present disclosure is that the stripping composition, in whole or in part, contains relatively non-toxic, non-corrosive, and non-reactive components, which makes the composition stable over a wide range of temperatures and process times. The stripping composition of the present disclosure is generally chemically compatible with virtually all materials used to construct existing or proposed stripping process tools for batch and single wafer stripping of semiconductor wafers.

[0055] After stripping, the semiconductor substrate is rinsed with a suitable rinsing solvent for about 5 seconds to about 5 minutes, with or without agitation. Examples of suitable rinsing solvents include, but are not limited to, deionized (DI) water, methanol, ethanol, isopropyl alcohol, N-methylpyrrolidinone, gamma-butyrolactone, dimethylsulfoxide, ethyl lactate, and propylene glycol monomethyl ether acetate. The solvent can be applied by a means similar to that used to apply the stripping composition described in this disclosure. The stripping composition may have already been removed from the semiconductor substrate prior to the start of the rinsing step, or may still be in contact with the semiconductor substrate at the start of the rinsing step. In some embodiments, the temperature used in the rinsing step is between 16°C and 27°C.

[0056] The semiconductor substrate is optionally dried after the rinsing step. Any suitable drying means known in the art can be used. Examples of suitable drying means include spin drying, flowing a dry gas across the semiconductor substrate, heating the semiconductor substrate with a heating means such as a hot plate or infrared lamps, Marangoni drying, Rotagoni drying, IPA drying, and combinations thereof. Drying times are method dependent but are typically on the order of 30 seconds to several minutes.

[0057] In some embodiments, the semiconductor substrate may then be processed to form one or more circuits on the substrate, or may be processed into a semiconductor chip, for example, by assembling (e.g., dicing and bonding) and packaging (e.g., chip sealing).

[0058] The present disclosure will be described in more detail with reference to the following examples, which are for illustrative purposes and should not be construed as limiting the scope of the present disclosure. EXAMPLES

[0059] <Formulation Examples 1 and 2 (FE-1 and FE-2)> Formulation Examples 1 and 2 (FE-1 and FE-2) were prepared by mixing the ingredients in the order shown in Table 1. In FE-2, the last three ingredients were mixed separately before being added to the remaining ingredients.

[0060] [Table 1]

[0061] Silicon or copper wafers with a Si / SiO2 / Ta / Cu multilayer structure were used as substrates for polyimide (PI), polybenzoxazole (PBO) or novolac-PAC based photoresist films. These films were produced on the wafers by either spin-coating or dry film lamination. Film thicknesses ranged from 8 to 110 μm. Micropatterns were formed by actinic radiation exposure using a mask or reticle and developed using aqueous or organic solvents. The developed films were exposed to radiation and / or cured at high temperature, except for the novolac based films. In the case of novolac resists, contact holes and / or trenches were filled with various metals, such as Cu, Ni, Pd, Sn, by electroplating before stripping.

[0062] The wafers were cut into 1 x 2 inch pieces and placed upright in a 600 ml beaker containing 300 ml of the above stripping solution. The contents of the beaker were stirred with a magnetic bar and heated to maintain a constant temperature using a PID controller. After the desired time, the wafer pieces were removed, quickly rinsed with water and blown dry with nitrogen. The extent of stripping and cleaning was determined by measuring the remaining film thickness using a Dektak profilometer and examined with a scanning electron microscope. The results are summarized in Table 2.

[0063] [Table 2]

[0064] As shown in Table 2, both FE-1 and FE-2 were able to completely remove the photoresist films tested (except for the photoresist films tested in Samples 5 and 6).

[0065] Although the disclosure has been described in detail with reference to specific embodiments thereof, it will be understood that modifications and variations are intended to fall within the spirit and scope of what is described and claimed.

[0066] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims priority from U.S. Provisional Patent Application No. 62 / 837,776, filed April 24, 2019, the contents of which are incorporated herein by reference in their entirety. [1] 1) one or more water-soluble polar aprotic organic solvents; 2) one or more quaternary ammonium hydroxides; 3) one or more carboxylic acids; 4) one or more Group II metal cations; 5) one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines, and 6) Water, A composition comprising: The composition does not contain compounds containing three or more hydroxy groups. [2] The one or more quaternary ammonium hydroxides have the formula [NR 1 R 2 R 3 R 4 ] + OH, where R 1 、R 2 、R 3 , and R 4 each independently represents a linear, branched or cyclic alkyl group optionally substituted with a hydroxy group, a substituted or unsubstituted phenyl group, or a substituted or unsubstituted benzyl group. [3] R 1 、R 2 、R 3 , and R 4 each independently represents a C1 to C4 alkyl group, a hydroxyethyl group, a phenyl group, or a benzyl group. [4] The composition according to [1], comprising the one or more quaternary ammonium hydroxides in an amount of about 0.1% by weight to about 15% by weight. [5] The composition according to [1] above, wherein the one or more carboxylic acids are selected from the group consisting of monocarboxylic acids, dicarboxylic acids, tricarboxylic acids, monocarboxylic alpha-hydroxy acids and beta-hydroxy acids, dicarboxylic acids alpha-hydroxy acids and beta-hydroxy acids, or tricarboxylic acids alpha-hydroxy acids and beta-hydroxy acids. [6] The composition according to [5] above, wherein the one or more carboxylic acids include citric acid, maleic acid, fumaric acid, lactic acid, glycolic acid, oxalic acid, tartaric acid, succinic acid, or benzoic acid. [7] The composition according to [6] above, wherein the one or more carboxylic acids are citric acid. [8] The composition according to [1], comprising the one or more carboxylic acids in an amount of about 0.1% by weight to about 1.5% by weight. [9] The one or more Group II metal cations are Mg 2+ , Ca 2+ 、Sr 2+ , or Ba2+ The composition according to [1] above.

[10] The one or more Group II metal cations are Ca 2+ The composition according to [9] above,

[11] The composition according to [1], wherein the one or more Group II metal cations are present in an amount of from about 5 ppm to about 40 ppm.

[12] The one or more copper corrosion inhibitors include a 6-substituted-2,4-diamino-1,3,5-triazine, wherein the substituent at the 6-position is a substituted or unsubstituted linear or branched C1 to C12 alkyl group, a substituted or unsubstituted C3 to C12 cycloalkyl group, a substituted or unsubstituted aryl group, -SCH 2 R 100 , -N(R 100 R 101 ), or an imidyl group, where R 100 and R 101 are each independently a substituted or unsubstituted linear or branched C1 to C12 alkyl group optionally containing a nitrogen atom or an oxygen atom in the alkyl chain, a substituted or unsubstituted C3 to C12 cycloalkyl group optionally containing a nitrogen atom or an oxygen atom in the cycloalkyl ring, a substituted or unsubstituted aryl group, or R 100 and R 101 The composition according to [1] above, wherein together with the atoms bonded to them, they form a ring.

[13] The composition of claim 12, wherein the one or more copper corrosion inhibitors include 6-phenyl-2,4-diamino-1,3,5-triazine or 6-methyl-2,4-diamino-1,3,5-triazine.

[14] The composition according to [1], comprising the one or more copper corrosion inhibitors in an amount of about 0.1% by weight to about 10% by weight.

[15] The composition according to [1] above, wherein the one or more water-soluble polar aprotic organic solvents include dimethyl sulfoxide, sulfolane, dimethyl sulfone, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, gamma-butyrolactone, propylene carbonate, 1,3-dimethyl-2-imidazolidinone, or a mixture thereof.

[16] The composition according to [1], comprising the one or more water-soluble polar aprotic organic solvents in an amount of about 30% by weight to about 90% by weight.

[17] The composition according to [1], wherein the water is contained in an amount ranging from about 1% by weight to about 25% by weight.

[18] The composition according to [1] above, further comprising one or more antifoaming surfactants.

[19] The composition according to

[18] , comprising the one or more antifoaming surfactants in an amount of about 0.01% by weight to about 3% by weight.

[20] The composition according to [1] above, further comprising one or more alcohol solvents.

[21] The composition of claim 20, wherein the one or more alcohol solvents comprise an alkanediol, a glycol, an alkoxy alcohol, a saturated aliphatic monohydric alcohol, an unsaturated non-aromatic monohydric alcohol, an alcohol containing a ring structure, or a mixture thereof.

[22] The composition according to

[20] , comprising the one or more alcohol solvents in an amount of about 5% by weight to about 60% by weight.

[23] The composition described in [1] above, having a pH of about 13 or higher.

[24] The composition according to [1], comprising dimethyl sulfoxide, tetramethylammonium hydroxide, citric acid, calcium citrate, 6-phenyl-2,4-diamino-1,3,5-triazine, an antifoaming agent, and water.

[25] dimethyl sulfoxide in an amount from about 30% to about 90% by weight of the composition; tetramethylammonium hydroxide in an amount from about 0.1% to about 15% by weight of the composition; citric acid in an amount from about 0.1% to about 1.5% by weight of the composition; calcium citrate in an amount from about 5 ppm to about 40 ppm of the composition; 6-phenyl-2,4-diamino-1,3,5-triazine in an amount from about 0.1% to about 10% by weight of the composition; an antifoaming agent in an amount of about 0.01% to about 3% by weight of the composition; and Water in an amount of about 1% to about 25% by weight of the composition; The composition described in [1] above.

[26] 1) one or more water-soluble polar aprotic organic solvents; 2) one or more quaternary ammonium hydroxides; 3) one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines, and 4) water, Including, The composition is free of carboxylic acids, Group II metal cations, and compounds containing three or more hydroxy groups.

[27] The composition according to

[26] , further comprising one or more antifoaming surfactants.

[28] The composition according to

[27] , comprising dimethyl sulfoxide, tetramethylammonium hydroxide, 6-phenyl-2,4-diamino-1,3,5-triazine, an antifoaming agent, and water.

[29] dimethyl sulfoxide in an amount from about 30% to about 90% by weight of the composition; tetramethylammonium hydroxide in an amount from about 0.1% to about 15% by weight of the composition; 6-phenyl-2,4-diamino-1,3,5-triazine in an amount from about 0.1% to about 10% by weight of the composition; an antifoaming agent in an amount of about 0.01% to about 3% by weight of the composition; and Water in an amount of about 1% to about 25% by weight of the composition; The composition described in

[28] above.

[30] A method comprising contacting a semiconductor substrate containing photoresist or photoresist residue with the composition of [1] above to remove the photoresist or the photoresist residue.

[31] The method of any one of claims 1 to 30, further comprising rinsing the semiconductor substrate with a rinsing solvent after the contacting step.

[32] The method according to

[31] , further comprising drying the semiconductor substrate after the rinsing step.

[33] The method according to

[30] , wherein Cu or Al in the semiconductor substrate is not substantially removed.

Claims

1. 1) one or more water-soluble polar aprotic organic solvents; 2) one or more quaternary ammonium hydroxides; 3) one or more carboxylic acids; 4) one or more Group II metal cations; 5) one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, A composition comprising: The composition is free of alcohol solvents and compounds containing three or more hydroxy groups.

2. The one or more quaternary ammonium hydroxides are represented by the formula [NR １ R ２ R ３ R ４ ] ＋ OH, where R １ , R ２ , R ３ , and R ４ wherein each independently is a linear, branched or cyclic alkyl group optionally substituted with a hydroxy group, a substituted or unsubstituted phenyl group, or a substituted or unsubstituted benzyl group.

3. The R １ , R ２ , R ３ , and R ４ are each independently a C1 to C4 alkyl group, a hydroxyethyl group, a phenyl group, or a benzyl group.

4. 10. The composition of claim 1, comprising the one or more quaternary ammonium hydroxides in an amount of from 0.1% to 15% by weight.

5. 2. The composition of claim 1, wherein the one or more carboxylic acids are selected from the group consisting of monocarboxylic acids, dicarboxylic acids, tricarboxylic acids, monocarboxylic alpha-hydroxy acids and beta-hydroxy acids, dicarboxylic acids, or tricarboxylic alpha-hydroxy acids and beta-hydroxy acids.

6. 6. The composition of claim 5, wherein the one or more carboxylic acids include citric acid, maleic acid, fumaric acid, lactic acid, glycolic acid, oxalic acid, tartaric acid, succinic acid, or benzoic acid.

7. The composition of claim 6 , wherein the one or more carboxylic acids is citric acid.

8. 10. The composition of claim 1, comprising the one or more carboxylic acids in an amount of from 0.1% to 1.5% by weight.

9. The one or more Group II metal cations are Mg ２＋ , Ca ２＋ , Sr ２＋ , or Ba ２＋ The composition of claim 1 comprising:

10. The one or more Group II metal cations are Ca ２＋ The composition of claim 9 comprising:

11. 10. The composition of claim 1, comprising the one or more Group II metal cations in an amount of from 5 ppm to 40 ppm.

12. The one or more copper corrosion inhibitors include a 6-substituted 2,4-diamino-1,3,5-triazine, wherein the substituent at the 6-position is a substituted or unsubstituted linear or branched C1 to C12 alkyl group, a substituted or unsubstituted C3 to C12 cycloalkyl group, a substituted or unsubstituted aryl group, -SCH ２ R １００ , -N(R １００ R １０１ ), or an imidyl group, where R １００ and R １０１ are each independently a substituted or unsubstituted linear or branched C1 to C12 alkyl group optionally containing a nitrogen atom or an oxygen atom in the alkyl chain, a substituted or unsubstituted C3 to C12 cycloalkyl group optionally containing a nitrogen atom or an oxygen atom in the cycloalkyl ring, a substituted or unsubstituted aryl group, or R １００ and R １０１ The composition of claim 1 , wherein together with the atoms to which they are attached form a ring.

13. The composition of claim 12, wherein the one or more copper corrosion inhibitors comprise 6-phenyl-2,4-diamino-1,3,5-triazine or 6-methyl-2,4-diamino-1,3,5-triazine.

14. 10. The composition of claim 1, comprising the one or more copper corrosion inhibitors in an amount of from 0.1% to 10% by weight.

15. 2. The composition of claim 1, wherein the one or more water soluble polar aprotic organic solvents comprise dimethylsulfoxide, sulfolane, dimethylsulfone, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, gamma-butyrolactone, propylene carbonate, 1,3-dimethyl-2-imidazolidinone, or mixtures thereof.

16. 10. The composition of claim 1 comprising the one or more water-soluble polar aprotic organic solvents in an amount of from 30% to 90% by weight.

17. The composition of claim 1 , wherein the water is present in an amount ranging from 1% to 25% by weight.

18. 10. The composition of claim 1 further comprising one or more antifoam surfactants.

19. 20. The composition of claim 18, comprising the one or more antifoam surfactants in an amount of from 0.01% to 3% by weight.

20. 2. The composition of claim 1, having a pH of 13 or greater.

21. 10. The composition of claim 1 comprising dimethyl sulfoxide, tetramethylammonium hydroxide, citric acid, calcium citrate, 6-phenyl-2,4-diamino-1,3,5-triazine, an antifoaming agent, and water.

22. dimethyl sulfoxide in an amount from 30% to 90% by weight of the composition; tetramethylammonium hydroxide in an amount from 0.1% to 15% by weight of the composition; citric acid in an amount from 0.1% to 1.5% by weight of the composition; calcium citrate in an amount from 5 ppm to 40 ppm of the composition; 6-phenyl-2,4-diamino-1,3,5-triazine in an amount of 0.1% to 10% by weight of the composition; an antifoaming agent in an amount from 0.01% to 3% by weight of the composition; and Water in an amount of 1% to 25% by weight of the composition, The composition of claim 1.

23. The composition comprising at least one carboxylic acid in an amount of 0.2% to 1.5% by weight, the composition contains at least one Group II metal cation in an amount of 5 ppm to 25 ppm; 10. The composition of claim 1, wherein the composition contains at least one copper corrosion inhibitor in an amount of from 0.5% to 10% by weight.

24. 1) one or more water-soluble polar aprotic organic solvents; 2) one or more quaternary ammonium hydroxides; 3) one or more copper corrosion inhibitors selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 4) water, Including, The composition is free of alcohol solvents, carboxylic acids, Group II metal cations, and compounds containing three or more hydroxy groups.

25. 25. The composition of claim 24, further comprising one or more antifoam surfactants.

26. 26. The composition of claim 25, comprising dimethylsulfoxide, tetramethylammonium hydroxide, 6-phenyl-2,4-diamino-1,3,5-triazine, an antifoaming agent, and water.

27. dimethyl sulfoxide in an amount from 30% to 90% by weight of the composition; tetramethylammonium hydroxide in an amount from 0.1% to 15% by weight of the composition; 6-phenyl-2,4-diamino-1,3,5-triazine in an amount of 0.1% to 10% by weight of the composition; an antifoaming agent in an amount from 0.01% to 3% by weight of the composition; and Water in an amount of 1% to 25% by weight of the composition, 27. The composition of claim 26.

28. The composition of claim 24, wherein the composition contains at least one copper corrosion inhibitor in an amount of 0.5% to 10% by weight.

29. A method comprising contacting a semiconductor substrate containing photoresist or photoresist residue with the composition of claim 1 to remove said photoresist or said photoresist residue.

30. 30. The method of claim 29, further comprising rinsing the semiconductor substrate with a rinsing solvent after the contacting step.

31. 31. The method of claim 30, further comprising drying the semiconductor substrate after the rinsing step.

32. 30. The method of claim 29, wherein substantially no Cu or Al is removed from the semiconductor substrate.

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