Light emitting devices and displays

Abstract

A light emitting device according to one embodiment of the present disclosure comprises a plurality of light emitting elements. Each light emitting element has a semiconductor layer configured by layering, in this order, a first conductive layer having a light emitting surface, a light emitting layer, and a second conductive layer. Each light emitting element further includes a first electrode contacting the second conductive layer, and a second electrode contacting the first conductive layer. In each light emitting element, the first conductive layer and the second electrode are shared. Each light emitting element has, in the first conductive layer, a current path from a section facing the first electrode to a section facing the second electrode. The first conductive layer is provided with one or a plurality of trenches in a region between two adjacent current paths. The light emitting device further comprises a light shielding part provided in one or a plurality of trenches.

Description

[Technical field]

[0001] The present disclosure relates to light emitting devices and displays. [Background technology]

[0002] In recent years, lighting devices and image display devices composed of a plurality of light-emitting diodes (LEDs) have become widespread. For example, an LED display has been proposed in which three LEDs emitting red (R), green (G), and blue (B) light are arranged in a two-dimensional matrix as one pixel. In addition, a color conversion type LED display has been proposed in which an LED array is composed of a single color as the light source of the LED display, and phosphors emitting light of different fluorescent colors are periodically arranged on the single-color LED array (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-221316 A Summary of the Invention

[0004] However, in a color conversion type light emitting device, when the LEDs are made smaller and the gap between adjacent LEDs is narrowed in order to increase pixel resolution, light emitted from the LEDs is likely to enter a phosphor disposed opposite the adjacent LED, causing optical crosstalk to occur, which causes the phosphor to emit fluorescence. When such optical crosstalk occurs, color reproducibility is reduced. Therefore, it is desirable to provide a light emitting device and a display device capable of suppressing optical crosstalk.

[0005] A light-emitting device according to one aspect of the present disclosure includes a plurality of light-emitting elements. Each light-emitting element includes a semiconductor layer including a first conductive layer having a light-emitting surface, a light-emitting layer, and a second conductive layer stacked in this order. Each light-emitting element further includes a first electrode in contact with the second conductive layer and a second electrode in contact with the first conductive layer, and emits light from the light-emitting layer through the light-emitting surface. In each light-emitting element, the first conductive layer and the second electrode are shared by each other. In each light-emitting element, the first conductive layer includes a current path extending from a portion facing the first electrode to a portion facing the second electrode. The first conductive layer includes one or more trenches in a region between two adjacent current paths. The light-emitting device further includes a light-shielding portion provided in the one or more trenches.

[0006] A display device according to one aspect of the present disclosure includes a plurality of pixels each having a plurality of light-emitting elements, each of which has the same configuration as the light-emitting element described above, and each of which further includes a light-shielding portion disposed in one or more trenches.

[0007] In a light-emitting device and a display device according to an aspect of the present disclosure, the first conductive layer is provided with one or more trenches in a region between two adjacent current paths, and a light-shielding portion is provided in the one or more trenches. This makes it possible to ensure a current path in each light-emitting element while reducing leakage of light emitted from the light-emitting layer to the first conductive layer of an adjacent light-emitting element by the light-shielding portion. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram illustrating an example of a perspective configuration of a display device according to an embodiment of the present disclosure. [Diagram 2] 2 is a diagram illustrating an example of functional blocks of the display device in FIG. 1. [Diagram 3] 2 is a diagram illustrating an example of a planar layout of the mounting board of FIG. 1. [Figure 4] 4 is a diagram illustrating an example of a circuit configuration of each pixel in FIG. 3. [Figure 5A]4 is a diagram illustrating an example of a horizontal cross-sectional configuration of the pixel chip in FIG. 3. [Figure 5B] 4 is a diagram illustrating an example of a horizontal cross-sectional configuration of the pixel chip in FIG. 3. [Figure 5C] 4 is a diagram illustrating an example of a horizontal cross-sectional configuration of the pixel chip in FIG. 3. [Figure 5D] 4 is a diagram illustrating an example of a horizontal cross-sectional configuration of the pixel chip in FIG. 3. [Figure 6A] 4 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. 3. [Figure 6B] 4 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. 3. [Figure 6C] 4 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. 3. [Figure 6D] 4 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. 3. [Figure 6E] 4 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. 3. [Figure 7A] 4A to 4C are cross-sectional views illustrating an example of a method for manufacturing the pixel chip in FIG. [Figure 7B] 7B is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7A. [Figure 7C] FIG. 7C is a diagram illustrating an example of the top configuration of FIG. 7B. [Figure 7D] FIG. 7C is a cross-sectional view showing an example of the manufacturing process following FIG. 7B. [Figure 7E] FIG. 7B is a diagram illustrating an example of the top surface configuration of FIG. 7D. [Figure 7F] FIG. 7E is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7D. [Figure 7G] FIG. 7F is a diagram illustrating an example of the top surface configuration of FIG. 7F. [Figure 7H] FIG. 7C is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7F. [Figure 7I] FIG. 7C is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7H. [Figure 7J] 7I. FIG. 7I is a cross-sectional view showing an example of a manufacturing process. [Figure 7K] 7A to 7J are cross-sectional views illustrating an example of a manufacturing process subsequent to FIG. 7J. [Figure 7L] FIG. 7K is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7K. [Figure 7M] FIG. 7B is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7L. [Figure 7N] FIG. 7B is a cross-sectional view showing an example of the manufacturing process subsequent to FIG. 7M. [Figure 7O] FIG. 7N is a cross-sectional view showing an example of a manufacturing process. [Figure 7P] 7A to 7C are cross-sectional views illustrating an example of a manufacturing process subsequent to FIG. 7O. [Figure 7Q] FIG. 7B is a diagram illustrating an example of the top configuration of FIG. 7P. [Figure 7R] FIG. 7B is a cross-sectional view showing an example of the manufacturing process following FIG. 7P. [Figure 7S] FIG. 7B is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7R. [Figure 7T] FIG. 7B is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7S. [Figure 7U] FIG. 7C is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7T. [Figure 7V] FIG. 7U is a cross-sectional view showing an example of a manufacturing process following FIG. 7U. [Figure 7W] FIG. 7B is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7V. [Figure 7X] FIG. 7W is a cross-sectional view showing an example of a manufacturing process subsequent to FIG. 7W. [Figure 7Y] 7A to 7X are cross-sectional views illustrating an example of a manufacturing process following FIG. 7X. [Figure 8] 4 is a diagram illustrating an example of light emission in the pixel chip of FIG. 3. [Figure 9] 1. FIG. 4 is a diagram illustrating a modified example of the planar layout of the mounting board in FIG. [Figure 10A] 10 is a diagram illustrating an example of a horizontal cross-sectional configuration of the pixel chip in FIG. [Figure 10B] 10 is a diagram illustrating an example of a horizontal cross-sectional configuration of the pixel chip in FIG. [Figure 10C] 10 is a diagram illustrating an example of a horizontal cross-sectional configuration of the pixel chip in FIG. [Figure 10D] 10 is a diagram illustrating an example of a horizontal cross-sectional configuration of the pixel chip in FIG. [Figure 11A] 10 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. [Figure 11B] 10 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. [Figure 11C] 10 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. [Figure 11D] 10 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. [Figure 11E] 10 is a diagram illustrating an example of a vertical cross-sectional configuration of the pixel chip in FIG. [Figure 12] FIG. 5C is a diagram illustrating a modified horizontal cross-sectional configuration of FIG. 5B. [Figure 13] FIG. 10C is a diagram showing a modified horizontal cross-sectional configuration of FIG. 10B. [Figure 14] FIG. 5C is a diagram illustrating a modified horizontal cross-sectional configuration of FIG. 5B. [Figure 15] FIG. 10C is a diagram showing a modified horizontal cross-sectional configuration of FIG. 10B. [Figure 16] FIG. 13 is a diagram illustrating a modified vertical cross-sectional configuration of the pixel chip. [Figure 17] FIG. 13 is a diagram illustrating a modified vertical cross-sectional configuration of the pixel chip. [Figure 18] FIG. 13 is a diagram illustrating a modified vertical cross-sectional configuration of the pixel chip. [Figure 19] FIG. 13 is a diagram illustrating a modified vertical cross-sectional configuration of the pixel chip. [Figure 20] FIG. 13 is a diagram illustrating a modified vertical cross-sectional configuration of the pixel chip. [Figure 21] FIG. 13 is a diagram illustrating a modified vertical cross-sectional configuration of the pixel chip. [Figure 22] FIG. 13 is a diagram illustrating a modified vertical cross-sectional configuration of the pixel chip. [Diagram 23] 20 is a diagram illustrating an example of light emission in the pixel chip of FIG. 19. [Figure 24] 21 is a diagram illustrating an example of light emission in the pixel chip of FIG. 20. [Diagram 25] 22 is a diagram illustrating an example of light emission in the pixel chip of FIG. 21. [Figure 26] 23 is a diagram illustrating an example of light emission in the pixel chip of FIG. 22. [Figure 27]FIG. 11 is a diagram illustrating a modified example of the configuration of a pixel chip. [Figure 28] FIG. 11 is a diagram illustrating a modified example of the configuration of a pixel chip. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiment of the present disclosure will be described in detail with reference to the drawings. The following description is one specific example of the present disclosure, and the present disclosure is not limited to the following embodiment. Furthermore, the present disclosure is not limited to the arrangement, dimensions, and dimensional ratios of each component shown in each drawing. The description will be given in the following order. 1. Embodiment (Display Device) Example of obtaining three colors of light from a light-emitting element that emits blue light...Figures 1 to 8 2. Modifications (display device) Modification A: Example of light-emitting element arrangement in stripes...Figs. 9 to 11E Modification B: Variations in the arrangement of multiple light-shielding parts...Figures 12 to 15 Variation C: Variation in the number of light-emitting elements per pixel chip Figures 16 to 18 Modification D: Example using a light-emitting element that emits ultraviolet light...Figures 19 to 26 Modification E: Example with color filters...Fig. 27, Fig. 28

[0010] <1. Preferred embodiment> [composition] A display device 100 according to an embodiment of the present disclosure will be described. FIG. 1 is a perspective view showing an example of a schematic configuration of the display device 100 according to the present embodiment. The display device 100 is a so-called LED display, in which LEDs are used as display pixels. As shown in FIG. 1, the display device 100 includes a display panel 110 and a controller 120 that controls the driving of the display panel 110. The controller 120 controls the driving of the display panel 110 based on, for example, a video signal Din and a synchronization signal Tin input from the outside.

[0011] The display panel 110 includes a mounting substrate 110A and a transparent substrate 110B superimposed on the mounting substrate 110A, as shown in FIG. 1. The transparent substrate 110B has a role of protecting a light emitting element 15 (described later) included in the mounting substrate 110A, and is formed of, for example, a glass substrate or a resin substrate. The mounting substrate 110A includes a pixel array 10, a gate driver 20, and a data driver 30, as shown in FIG. 2. The pixel array 10, the gate driver 20, and the data driver 30 are mounted on, for example, a wiring substrate 13, which will be described later. The gate driver 20 and the data driver 30 drive the pixel array 10 under the control of the controller 120, thereby causing the pixel array 10 to display an image. The gate driver 20 is connected to a plurality of gate lines GTL, and drives the pixel array 10, for example, by sequentially applying a selection voltage to the plurality of gate lines GTL. The data driver 30 is connected to a plurality of data lines DTL, and drives the pixel array 10, for example, by applying a signal voltage to the plurality of data lines DTL in response to a video signal Din.

[0012] FIG. 3 shows an example of a planar layout of the mounting substrate 110A. A plurality of pixel chips 12 arranged in a matrix are mounted on the mounting substrate 110A. The pixel chip 12 corresponds to a specific example of a "light-emitting device" of the present disclosure. The pixel chip 12 has a size of, for example, 1 μm or more and 100 μm or less, and is called a micro LED. The pixel chip 12 may be a so-called mini LED having a size of, for example, more than 100 μm and 200 μm or less. The pixel chip 12 is provided with one pixel 11. The pixel 11 includes, for example, three pixels 11G, 11B, and 11R having different emission colors. That is, the pixel chip 12 includes, for example, three pixels 11G, 11B, and 11R having different emission colors. In the pixel chip 12, the three pixels 11G, 11B, and 11R are arranged in three locations in a 2×2 matrix.

[0013] On the mounting surface of the mounting substrate 110A, for example, four electrodes (G electrode 13G, B electrode 13B, R electrode 13R, C electrode 13C) are provided for each pixel chip 12. The first electrode 16 (16G) of the pixel 11G in the pixel chip 12 is connected to the G electrode 13G. The first electrode 16 (16B) of the pixel 11B in the pixel chip 12 is connected to the B electrode 13B. The first electrode 16 (16R) of the pixel 11R in the pixel chip 12 is connected to the R electrode 13R. The second electrode 17 of each of the pixels 11G, 11B, and 11R in the pixel chip 12 is connected to the C electrode 13C. The second electrode 17 is shared by each of the pixels 11G, 11B, and 11R. That is, only one second electrode 17 is provided in each pixel chip 12. On the mounting board 110A, the four electrodes (G electrode 13G, B electrode 13B, R electrode 13R, and C electrode 13C) are arranged in, for example, a 2×2 matrix.

[0014] The mounting substrate 110A is provided with, for example, a plurality of gate lines GTL extending in the row direction, a plurality of data lines DTL extending in the column direction, and a plurality of ground lines GND extending in the row direction. The plurality of gate lines GTL are, for example, assigned one for each of a plurality of pixel chips 12 arranged in a line in the row direction. The plurality of data lines DTL are, for example, assigned three for each of a plurality of pixel chips 12 arranged in a line in the column direction. The plurality of ground lines GND are, for example, assigned one for each of a plurality of pixel chips 12 arranged in a line in the row direction.

[0015] FIG. 4 shows an example of a circuit configuration of each of the pixels 11G, 11B, and 11R. Each pixel has a light-emitting element 15 and a pixel circuit 14 that controls the emission and quenching of the light-emitting element 15. The light-emitting element 15 is, for example, a light-emitting diode (LED) that emits light (blue light) in the blue band with an emission wavelength of 430 nm or more and 500 nm or less. The pixel circuit 14 is configured to include, for example, a drive transistor Tr1, a write transistor Tr2, and a storage capacitor Cs. The write transistor Tr2 controls the voltage applied to the gate of the drive transistor Tr1. The write transistor Tr2 samples the voltage of the data line DTL and writes the voltage obtained by sampling to the gate of the drive transistor Tr1. The storage capacitor Cs is connected to the gate of the drive transistor Tr1 and the ground line GND, and holds the gate voltage of the drive transistor Tr1. The drive transistor Tr1 is connected in series to a power supply voltage VDD and the light-emitting element 15. The drive transistor Tr1 drives the light-emitting element 15. The driving transistor Tr1 controls a current flowing through the light-emitting element 15 in response to a voltage input to the gate of the driving transistor Tr1. That is, the pixel circuit 14 causes a current corresponding to a signal voltage input from the data driver 30 to flow through the light-emitting element 15, thereby causing the light-emitting element 15 to emit light with a luminance corresponding to the signal voltage input from the data driver 30. The circuit of each of the pixels 11G, 11B, and 11R is not limited to the circuit shown in FIG.

[0016] 5A to 5D show an example of a horizontal cross-sectional configuration of the pixel chip 12. FIG. 6A to 6E show an example of a vertical cross-sectional configuration of the pixel chip 12. The horizontal cross-section refers to a cross-section parallel to the light exit surface 15s described later, and the vertical cross-section refers to a cross-section perpendicular to the light exit surface 15s. FIG. 5A shows an example of a cross-sectional configuration taken along line FF in FIG. 6A to 6E. FIG. 5B shows an example of a cross-sectional configuration taken along line GG in FIG. 6A to 6E. FIG. 5C shows an example of a cross-sectional configuration taken along line HH in FIG. 6A to 6E. FIG. 5D shows an example of a cross-sectional configuration taken along line II in FIG. 6A to 6E. FIG. 6A shows an example of a cross-sectional configuration taken along line AA in FIG. 5A to 5D. FIG. 6B shows an example of a cross-sectional configuration taken along line BB in FIG. 5A to 5D. FIG. 6C shows an example of a cross-sectional configuration taken along line CC in FIG. 5A to 5D. Fig. 6D shows an example of a cross-sectional configuration taken along line DD in Fig. 5A to Fig. 5D, and Fig. 6E shows an example of a cross-sectional configuration taken along line EE in Fig. 5A to Fig. 5D.

[0017] As described above, the pixel chip 12 has three pixels 11G, 11B, and 11R. In the pixel chip 12, each of the pixels 11G, 11B, and 11R has a light-emitting element 15 that emits light of the same color (blue light) regardless of the pixel, and has an optical member having a different color conversion function for each pixel on the light emission surface 15s of the light-emitting element 15. That is, in the pixel chip 12, each of the pixels 11G, 11B, and 11R is configured to emit light of different emission colors using the optical member.

[0018] As shown in FIG. 6A and FIG. 6D, the pixel 11G has a light emitting element 15 and a color conversion unit 125G provided on a light emission surface 15s of the light emitting element 15. The color conversion unit 125G corresponds to the optical member. The color conversion unit 125G is provided corresponding to the light emitting element 15 provided directly under the color conversion unit 125G. The light emitting element 15 emits light (blue light) to the color conversion unit 125G through the light emission surface 15s. The color conversion unit 125G performs color conversion (wavelength conversion) on the blue light emitted from the corresponding light emitting element 15. The color conversion unit 125G converts the incident blue light into green light, and emits the green light obtained by the color conversion to the opposite side to the light emitting element 15 side. The pixel 11G emits green light of a desired emission intensity by driving the pixel circuit 14 by the gate driver 20 and the data driver 30.

[0019] For example, as shown in FIG. 6A, the pixel 11B has a light-emitting element 15 and a light-transmitting portion 125C provided on a light-emitting surface 15s of the light-emitting element 15. The light-transmitting portion 125C corresponds to the optical member. The light-transmitting portion 125C is provided corresponding to the light-emitting element 15 provided directly below the light-transmitting portion 125C. The light-emitting element 15 emits light (blue light) to the light-transmitting portion 125C through the light-emitting surface 15s. The light-transmitting portion 125C transmits blue light emitted from the corresponding light-emitting element 15. The light-transmitting portion 125C transmits the incident blue light and emits it to the opposite side to the light-emitting element 15 side. That is, the light-transmitting portion 125C does not perform intentional color conversion. The pixel 11B emits blue light of a desired emission intensity by driving the pixel circuit 14 by the gate driver 20 and the data driver 30.

[0020] The pixel 11R has a light emitting element 15 and a color conversion unit 125R provided on a light emission surface 15s of the light emitting element 15, as shown in, for example, FIG. 6B and FIG. 6C. The color conversion unit 125R corresponds to the optical member described above. The color conversion unit 125R is provided corresponding to the light emitting element 15 provided directly under the color conversion unit 125R. The light emitting element 15 emits light (blue light) to the color conversion unit 125R through the light emission surface 15s. The color conversion unit 125R performs color conversion (wavelength conversion) on the blue light emitted from the corresponding light emitting element 15. The color conversion unit 125R converts the incident blue light into red light, and emits the red light obtained by the color conversion to the opposite side to the light emitting element 15 side. The pixel 11R emits red light of a desired emission intensity by driving the pixel circuit 14 by the gate driver 20 and the data driver 30.

[0021] (Light emitting element 15) The light emitting element 15 has a semiconductor layer formed by laminating a first conductive layer 15a having a light emitting surface 15s, a light emitting layer 15b, and a second conductive layer 15c in this order, as shown in, for example, Figs. 6A to 6E. The semiconductor layer is formed of, for example, a single crystal multilayer film of GaN, InGaN, or AlGaN. The first conductive layer 15a is formed of, for example, an n-type semiconductor. The light emitting layer 15b is formed of, for example, a non-doped semiconductor. The second conductive layer 15c is formed of, for example, a p-type semiconductor.

[0022] The light emitting element 15 further includes a first electrode 16 in contact with the second conductive layer 15c and a second electrode 17 in contact with the first conductive layer 15a, as shown in, for example, FIGS. 6A to 6E. The first electrode 16 is in ohmic contact with the second conductive layer 15c and is made of, for example, a laminated film (Ni / Au) of nickel (Ni) and gold (Au), or a laminated film (Pd / Au) of palladium (Pd) and gold (Au). The first electrode 16 may be made of, for example, a platinum (Pt) single layer film, or may be made of a laminated film including ITO (Indium Tin Oxide) in contact with the second conductive layer 15c and a metal layer in contact with the ITO. The second electrode 17 is in ohmic contact with the first conductive layer 15a and is composed of, for example, a laminated film (Ti / Al) of titanium (Ti) and aluminum (Al), or a laminated film (Cr / Au) of chromium (Cr) and gold (Au).

[0023] In the semiconductor layer, for example, as shown in Figures 6C to 6E, a mesa portion protruding toward the wiring board 13 side is formed by a part of the first conductive layer 15a, the light emitting layer 15b, and the second conductive layer 15c. A first electrode 16 is disposed on the top of the mesa portion, and a second electrode 17 is disposed at the base of the mesa portion. That is, the second electrode 17 is provided on the surface of the first conductive layer 15a opposite to the light emitting surface 15s, and the first electrode 16 and the second electrode 17 are provided on the surface of the pixel chip 12 opposite to the light emitting surface 15s.

[0024] In each light-emitting element 15 of the pixel chip 12, the second electrode 17 is shared with each other, for example, as shown in FIG. 6C to FIG. 6E. Furthermore, in each light-emitting element 15 of the pixel chip 12, the first conductive layer 15a is shared with each other, for example, as shown in FIG. 5B. That is, in the pixel chip 12, the first conductive layer 15a of each light-emitting element 15 is integrally formed. In each light-emitting element 15, the first conductive layer 15a has a current path P from a portion facing the first electrode 16 to a portion facing the second electrode 17. In the light-emitting element 15 of the pixel 11G, for example, as shown in FIG. 5B and FIG. 6C, the first conductive layer 15a has a current path Pgc from a portion facing the first electrode 16G to a portion facing the second electrode 17. 5B and 6D, the light-emitting element 15 of the pixel 11B has a current path Pbc in the first conductive layer 15a from a portion facing the first electrode 16B to a portion facing the second electrode 17. As shown in Fig. 5B and 6E, the light-emitting element 15 of the pixel 11R has a current path Prc in the first conductive layer 15a from a portion facing the first electrode 16R to a portion facing the second electrode 17. That is, in the pixel chip 12, the first conductive layer 15a has three current paths Pgc, Pbc, and Prc extending radially from a portion facing the second electrode 17.

[0025] The first conductive layer 15a is provided with a trench 15t in a region between two adjacent current paths Pgc, Pbc. The first conductive layer 15a is further provided with a trench 15t in a region between two adjacent current paths Pbc, Prc. The trench 15t is formed, for example, by etching the first conductive layer 15a from the side opposite to the light emission surface 15s, and is provided, for example, penetrating the first conductive layer 15a. When the trench 15t is provided penetrating the first conductive layer 15a, no current flows across the trench 15t in the first conductive layer 15a. When the trench 15t is provided at a depth that does not penetrate the first conductive layer 15a, the cross-sectional area of ​​the portion where the trench 15t is formed in the first conductive layer 15a is smaller than the cross-sectional area of ​​other portions, and it is difficult for a current to flow in the portion where the trench 15t is formed in the first conductive layer 15a. The trench 15t may be formed, for example, by etching the first conductive layer 15a from the light emitting surface 15s side.

[0026] An electrode 18G is provided in contact with the first electrode 16G of the pixel 11G. An electrode 18B is provided in contact with the first electrode 16B of the pixel 11B. An electrode 18R is provided in contact with the first electrode 16R of the pixel 11R. An electrode 19 having a bottom surface in the same plane as the bottom surface of the electrode 18 (18G, 18B, 18R) is provided in contact with the second electrode 17 provided in common to the pixels 11G, 11B, 11R. Metal bumps 128 are provided on the bottom surfaces of the electrodes 18 (18G, 18B, 18R) and the electrode 19. The pixel chip 12 is electrically connected to the wiring board 13 via the metal bumps 128. Solder balls may be provided instead of the metal bumps 128.

[0027] The pixel chip 12 further includes a light shielding portion 15w in each trench 15t formed in the first conductive layer 15a, as shown in, for example, FIG. 5B, FIG. 6A, and FIG. 6B. The light shielding portion 15w is provided in at least the light emitting surface 15s side of the trench 15t. The light shielding portion 15w is provided, for example, along the inner wall of the trench 15t. The side surface of each light emitting element 15 corresponds to the inner wall of the trench 15t. The light shielding portion 15w may be provided, for example, not only along the inner wall of the trench 15t but also along a portion of the bottom surface of the light emitting element 15 that is not covered by the electrode 18. In this case, from the viewpoint of preventing light leakage, the light shielding portion 15w may be made of a material that absorbs light (blue light) emitted from the light emitting layer 15b. Such a material may be, for example, a resin (so-called black resist) in which a light absorbing material such as carbon particles is dispersed.

[0028] From the viewpoint of improving the light extraction efficiency, the light shielding portion 15w may function as a reflection mirror that reflects the light (blue light) emitted from the light emitting layer 15b. From the viewpoint of improving the light extraction efficiency, the side surface of each light emitting element 15 may be tapered when viewed from the light emitting surface 15s side, and the light shielding portion 15w may function as a reflection mirror that reflects the light (blue light) emitted from the light emitting layer 15b to the light emitting surface 15s side. The light shielding portion 15w may be provided so as to fill the trench 15t.

[0029] In order for the light-shielding portion 15w to function as a reflecting mirror, the light-shielding portion 15w may be configured to include a multilayer film in which, for example, an insulating film 121, a metal film 122, and an insulating film 123 are laminated in this order from the side surface of the light-emitting element 15. The insulating films 121 and 123 may be, for example, SiO 2 Or Al 2 O 3The metal film 122 is made of a dielectric material such as Al, Ag, Au, Cu, Ni, Ti, W, Pd, or an alloy made of at least two of these materials, from the viewpoint of improving the light extraction efficiency of the light emitting element 15. Examples of materials having such characteristics include Al, Ag, Au, Cu, Ni, Ti, W, Pd, or an alloy made of at least two of these materials. The metal film 122 may be, for example, Al, Ag, Au, Cu, Ni, Ti, W, Pd, or a multilayer film made of at least two of these materials.

[0030] The light shielding portion 15w may be made of a material with low reflectance and high light absorption (for example, carbon dispersion resin, low reflection metal compound, metal oxide, or color dispersion resin).

[0031] (Color conversion section 125G, 125R) The color conversion units 125G and 125R, for example, absorb the excitation light (blue light) emitted from the light emitting element 15 and convert the wavelength. The color conversion units 125G and 125R are, for example, configured as a block in which a plurality of quantum dot phosphors are bound with a resin binder. The color conversion units 125G and 125R may further include, for example, a light scattering body that scatters the excitation light (blue light) emitted from the light emitting element 15. The light scattering body is, for example, configured of a material with a refractive index different from the refractive index of the resin included in the color conversion units 125G and 125R.

[0032] The quantum dot phosphor absorbs the excitation light (blue light) emitted from the light emitting element 15 and emits fluorescence. The quantum dot phosphor included in the color conversion unit 125G is, for example, a particulate phosphor that emits fluorescence with a green wavelength of 500 nm or more and 550 nm or less. The quantum dot phosphor included in the color conversion unit 125R is, for example, a particulate phosphor that emits fluorescence with a red wavelength of 610 nm or more and 780 nm or less. Examples of the quantum dot phosphor include CdS, CdSe, ZnS, ZnSe, InAgS, and CsPbCl. x Br 3-xThe quantum dot phosphor is composed of a solid solution or a multilayer structure containing one or more kinds of materials selected from the following. The quantum dot phosphor may be, for example, a phosphor particle of an oxide, a fluoride, or a nitride dispersed and solidified, or may be an organic phosphor.

[0033] For filling the quantum dot phosphor, for example, an inkjet or needle dispenser is used to eject or apply the resin mixed with the quantum dot phosphor depending on the viscosity of the resin. This is classified as a non-plate printing method, and since the above method allows the quantum dot phosphor to be selectively filled only in the barrier, it is possible to increase the utilization efficiency of the quantum dot phosphor. A resin containing the quantum dot phosphor may be applied to a specified location using screen printing or gravure printing technology, which are plate-type printing methods. In addition, the resin containing the quantum dot phosphor may be applied to the entire substrate, such as with a spin coater.

[0034] The resin mixed with the quantum dot phosphor is for dispersing the quantum dot phosphor uniformly, and is made of, for example, a material that is optically transparent to the light (blue light) emitted from the light emitting element 15. The resin mixed with the quantum dot phosphor is made of, for example, an acrylic, epoxy, or silicone resin material.

[0035] (Light transmission part 125C) The light transmitting portion 125C is made of, for example, a material that is optically transparent to the light (blue light) emitted from the light emitting element 15. The light transmitting portion 125C is made of, for example, an acrylic, epoxy, or silicone resin material.

[0036] The pixel chip 12 further includes, for example, a light-transmitting portion 125C (hereinafter, when distinguishing it from the light-transmitting portion 125C provided in the pixel 11B) on a portion of the upper surface of the first conductive layer 15a facing the second electrode 17, as shown in FIG. 6B to FIG. 6E. The pixel chip 12 further includes, for example, a light-shielding layer 129 covering the surface of the light-transmitting portion 125Ca on the side opposite to the first conductive layer 15a, as shown in FIG. 6B to FIG. 6E. The light-shielding layer 129 prevents light from leaking to the outside through the light-transmitting portion 125Ca. The light-shielding layer 129 is made of, for example, a material with low reflectance and high light absorption (for example, a carbon dispersion resin, a low-reflectance metal compound, a metal oxide, or a color dispersion resin).

[0037] The pixel chip 12 further includes a light-shielding portion 126 that separates the color conversion portion 125G, the color conversion portion 125R, the light transmission portion 125C, and the light transmission portion 125Ca from one another, as shown in, for example, FIG. 5A and FIG. 6A to FIG. 6E. The light-shielding portion 126 is configured to include, for example, a material having a high reflectance with respect to visible light. Examples of materials having such characteristics include Al, Ag, Cu, Ni, Cr, W, Ti, and alloys composed of at least two of these materials. The light-shielding portion 126 may be configured to include, for example, a material that absorbs visible light. Examples of materials having such characteristics include resins (so-called black resists) in which light-absorbing materials such as carbon particles are dispersed. The light-shielding portion 126 is configured to include, for example, an organic resin, a dielectric material (SiO 2 , Al 2 O 3 The light-transmitting layer 126 may be composed of a partition wall made of a metal (such as a silver) or a semiconductor (such as Si), and a reflective layer 126a formed on the side surface of the partition wall and made of a material having a high reflectance to visible light.

[0038] The pixel chip 12 may further have a protective layer 127 as necessary, for example, as shown in Figs. 6A to 6E. The protective layer 127 has a role of protecting the surfaces of the color conversion section 125G, the color conversion section 125R, the light transmission section 125C, and the light blocking layer 129, and of sealing the color conversion section 125G and the color conversion section 125R against oxygen and moisture. The protective layer 127 is provided in contact with the upper surfaces of the color conversion section 125G, the color conversion section 125R, the light transmission section 125C, and the light blocking layer 129. The protective layer 127 may be made of, for example, SiN, Al 2 O 3 , AlN, ZrO 2 , Ta 2 O 3 , TiO 2 , ZnO, etc.

[0039] In the pixel chip 12, the three first electrodes 16 (16G, 16B, 16R) included in each of the pixels 11G, 11B, 11R and the second electrode 17 shared by the pixels 11G, 11B, 11R are arranged, for example, in a 2 × 2 matrix. In this case, the three first electrodes 16 (16G, 16B, 16R) and the second electrode 17 are, for example, of the same size.

[0040] [Manufacturing method] Next, a method for manufacturing the mounting board 110A will be described. Figures 7A to 7Y show an example of a manufacturing process for the mounting board 110A.

[0041] First, a compound semiconductor is formed in one step on the semiconductor substrate 141 by epitaxial crystal growth such as MOCVD (Metal Organic Chemical Vapor Deposition). When performing epitaxial crystal growth such as MOCVD, a gallium source gas is, for example, trimethylgallium ((CH 3 ) 3 Ga), and the source gas for indium is, for example, trimethylindium ((CH 3 ) 3 In, and trimethylaluminum ((CH 3 )3 Al), and ammonia (NH 3 ) is used as the silicon source gas. 4 ) is used, and the magnesium source gas is, for example, bis-cyclopentadienyl magnesium ((C 5 H 5 ) 2 Mg) is used.

[0042] First, the first conductive layer 15a, the light emitting layer 15b, and the second conductive layer 15c are formed in this order on the surface of the semiconductor substrate 141 by epitaxial crystal growth such as MOCVD (FIG. 7A). In this manner, the light emitting element substrate 140 is formed.

[0043] Next, for example, a resist layer (not shown) having a predetermined pattern is formed, and then the second conductive layer 15c, the light emitting layer 15b, and a part of the first conductive layer 15a are selectively etched using the resist layer as a mask. As a result, for example, as shown in FIG. 7B, a plurality of columnar mesa portions are formed. At this time, each mesa portion functions as a light emitting element 15. The planar configuration at this time is, for example, as shown in FIG. 7C. Note that the cross-sectional configuration example at the XX line in FIG. 7C corresponds to the cross-sectional view shown in FIG. 7B. The plurality of mesa portions (light emitting elements 15) formed on the light emitting element substrate 140 are arranged at three positions in a 2×2 matrix for every three mesa portions (light emitting elements 15). The three mesa portions (light emitting elements 15) arranged at three positions in the 2×2 matrix are, for example, substantially square in plan view, and have a shape in which a notch is provided at a position corresponding to the center part in the 2×2 matrix.

[0044] Next, a first electrode 16 contacting the top (upper surface of the second conductive layer 15c) of each mesa portion (light-emitting element 15) and a second electrode 17 contacting the bottom (upper surface of the first conductive layer 15a) of each mesa portion (light-emitting element 15) are formed (FIG. 7D). Next, after forming a resist layer (not shown) of a predetermined pattern, for example, the resist layer is used as a mask to selectively etch the gap portion (hereinafter referred to as the "first gap portion") between two mesa portions (light-emitting element 15) adjacent to each other in the row direction in the first conductive layer 15a, the gap portion (hereinafter referred to as the "second gap portion") between two mesa portions (light-emitting element 15) adjacent to each other in the column direction, a portion along the notch of the mesa portion (light-emitting element 15) provided at (1,1) in the 2×2 matrix, and a portion along the notch of the mesa portion (light-emitting element 15) provided at (2,2) in the 2×2 matrix. As a result, for example, as shown in FIG. 7D and FIG. 7E, two trenches 15t are formed in the first conductive layer 15a. FIG. 7E is a plan view of FIG. 7D. FIG. 7D is a cross-sectional view of FIG. 7E taken along line XX. At this time, each trench 15t penetrates the first conductive layer 15a, as shown in FIG. 7D. At this time, each trench 15t may be deep enough not to penetrate the first conductive layer 15a.

[0045] Next, an insulating film 121, a metal film 122, and an insulating film 123 are laminated in this order over the entire surface including the inner walls of each trench 15t (FIGS. 7F, 7G). FIG. 7G is an example of a planar configuration of FIG. 7F. FIG. 7F is an example of a cross-sectional configuration taken along line XX of FIG. 7G. As a result, a light-shielding portion 15w is formed in each trench 15t. At this time, a predetermined gap is formed between the two trenches 15t (light-shielding portions 15w), and this gap becomes part of the current path Pbc.

[0046] Next, a resist layer 150 in which the insulating film 123 is embedded is formed, and then openings are formed at predetermined positions in the resist layer 150. For example, in the resist layer 150, openings 150a are formed at positions facing the first electrodes 16 (16G, 16B, 16R) of each mesa portion (light-emitting element 15), and openings 150b are formed at positions facing the second electrodes 17 (FIG. 7I). Next, the insulating film 121, the metal film 122, and the insulating film 123 are selectively etched using the resist layer 150 as a mask. As a result, openings 150a' and 150b' are formed in the multilayer film consisting of the insulating film 121, the metal film 122, and the insulating film 123 (FIG. 7J). At this time, the first electrodes 16 (16G, 16B, 16R) are exposed at the bottom surface of the opening 150a', and the second electrode 17 is exposed at the bottom surface of the opening 150b'.

[0047] Next, for example, by performing a plating process, the electrodes 18 (18G, 18B, 18R) are formed in the openings 150a', and the electrode 19 is formed in the openings 150b' (FIG. 7K). Thereafter, the resist layer 150 is removed (FIG. 7L).

[0048] Next, for example, the light emitting element substrate 140 is mounted on the wiring substrate 13 with each mesa portion (light emitting element 15) facing the wiring substrate 13 side on which the metal bumps 128 are formed (FIG. 7M). As a result, the light emitting element substrate 140 and the wiring substrate 13 are bonded to each other via the multiple metal bumps 128. Next, a resin material such as polyimide is filled in the gap between the light emitting element substrate 140 and the wiring substrate 13 to form a filling layer 124 (FIG. 7N). After that, the semiconductor substrate 141 is peeled off from the light emitting element layer 142 including the multiple light emitting elements 15 (FIG. 7O). As a result, the light emitting surface 15s of each light emitting element 15 is exposed.

[0049] Next, for example, the light shielding portion 126 is formed on a surface including the light emission surface 15s of each light emitting element 15 (FIGS. 7P and 7Q). FIG. 7Q is a planar configuration example of FIG. 7P. FIG. 7P is a cross-sectional configuration example taken along line XX of FIG. 7Q. The light shielding portion 126 has openings 126G, 126B, and 126R formed at locations facing the light emitting elements 15. The light emission surface 15s (first conductive layer 15a) of the light emitting element 15 is exposed at the bottom of each of the openings 126G, 126B, and 126R. The light shielding portion 126 also has an opening 126C formed at a location facing the second electrode 17 (electrode 19). The first conductive layer 15a of the light emitting element 15 is exposed at the bottom of the opening 126C. If necessary, a reflective layer 126a may be provided in contact with the inner wall of the light blocking portion 126 (the inner wall of each of the openings 126G, 126B, 126R, and 126C) (FIG. 7R).

[0050] Next, for example, a resin 125G' in which at least a plurality of quantum dot phosphors are dispersed is applied to the entire surface including the openings 126G, 126B, 126R, and 126C (FIG. 7S). Then, the resin 125G' is left only in the opening 126G facing the light-emitting element 15 on the G electrode 13G. This forms the color conversion section 125G in the opening 126G (FIG. 7T). Next, for example, a resin 125R' in which at least a plurality of quantum dot phosphors are dispersed is applied to the entire surface including the openings 126B, 126R, and 126C (FIG. 7U). Then, the resin 125R' is left only in the opening 126R facing the light-emitting element 15 on the R electrode 13R. This forms the color conversion section 125R in the opening 126R (FIG. 7V).

[0051] Next, for example, a resin 125C' that does not contain a quantum dot phosphor is applied to the entire surface including the openings 126R and 126C (FIG. 7W). Then, the resin 125C' is left only in the openings 126G and 126C that face the light emitting element 15 on the electrodes 13B and 13C. This forms the light transmitting portion 125C in the openings 126G and 126C (FIG. 7X). Furthermore, the top of the light transmitting portion 125C provided at the location facing the C electrode 13C is scraped to form a recess, and a light shielding layer 129 is formed in the recess (FIG. 7X). After that, the entire surface is flattened, and then a protective layer 127 is formed on the flat surface (FIG. 7Y). In this way, a plurality of pixel chips 12 are formed on the wiring board 13. Finally, the gate driver 20 and the data driver 30 are mounted on the wiring board 13 at the locations where the pixel chips 12 are not formed. In this way, the mounting board 110A is formed.

[0052] [Operation] Next, the operation of the display device 100 will be described. Each light emitting element 15 in the pixel chip 12 is driven by the gate driver 20 and the data driver 30 to emit, for example, blue light L of a predetermined emission intensity as shown in FIG. B The blue light L emitted from the first light emitting element 15 in the pixel chip 12 B The color conversion unit 125G produces green light L G The converted light (green light L G ) is emitted to the outside as light from the pixel 11G. In addition, blue light L B The blue light L emitted from the third light-emitting element 15 in the pixel chip 12 passes through the light-transmitting portion 125C and is emitted to the outside as light of the pixel 11B. B The color conversion unit 125R converts red light L R The converted light (red light L R ) is emitted to the outside as light of the pixel 11R. From each pixel chip 12 arranged on the mounting substrate 110A, three lights with different emission colors (green light L G , blue light L B , red light L R) is emitted at a predetermined intensity. Three lights of different emission colors (green light L G , blue light L B , red light L R ) forms image light, and when this image light strikes the user's retina, the user recognizes that an image is being displayed on the display panel 110.

[0053] [effect] Next, the effects of the display device 100 will be described.

[0054] Display devices (LED displays) in which red, green, and blue light-emitting diodes (LEDs) are arranged in a two-dimensional matrix as pixels have been put to practical use and are widely used. Light-emitting diodes are manufactured by growing a semiconductor multilayer film with controlled band gap and conductivity type for each light-emitting color on a single crystal substrate, and then dividing and singulating the device into individual elements through processes such as electrode formation. Conventionally, display devices have been manufactured by mounting the singulated elements on a wiring board or a driving circuit board using a machine such as a chip mounter. For this reason, it has been difficult to achieve high resolution, for example, with a pixel arrangement period (pixel pitch) of approximately 1 mm or less.

[0055] In recent years, however, the pixel array period has been increased from 1 mm or less to several tens of μm by miniaturizing the element size through photopatterning and etching, and developing a method for transferring a large number of fine elements at once using adhesives. However, even with this type of method, there is a limit to the miniaturization due to the rearrangement of LEDs with different luminous colors on the same substrate. For example, to make a lightweight head-mounted display, it is desirable to keep the display size to about 20 mm x 15 mm or less, and to have a pixel count of about 640 x 480 or more, it is necessary to keep the pixel array period to about 30 μm or less. To arrange and mount three-color LEDs within this period, it is necessary to align and mount them using a highly accurate mounting device. Therefore, the manufacturing cost is significantly higher than that of conventional (liquid crystal or organic EL) displays formed monolithically.

[0056] On the other hand, as an effective method for achieving even higher resolution, it is possible to fabricate a multi-color display device by forming an LED array from single-color LEDs and arranging wavelength converters that emit different fluorescent colors alternately on the LED array. In this case, for example, if one pixel is formed from three LEDs and a cathode electrode and an anode electrode are provided for each LED, it is necessary to connect six electrodes to a drive circuit board for each pixel. Also, for example, if one pixel is formed from three LEDs and the conductive layer on the cathode side of each LED in one pixel is made common and the cathode electrode is made common, it is sufficient to connect four electrodes to a drive circuit board for each pixel. In this case, it is easy to increase the resolution of the pixel.

[0057] However, when the conductive layers are integrated as described above, light emitted from one LED is likely to propagate through the integrated conductive layer and enter a wavelength converter provided for another LED, resulting in optical crosstalk, which reduces color reproducibility.

[0058] On the other hand, in this embodiment, the first conductive layer 15a is provided with a trench 15t in a region between two adjacent current paths Pgc, Pbc, and a trench 15t is also provided in a region between two adjacent current paths Pbc, Prc. A light shielding portion 15w is provided in each of the trenches 15t. This makes it possible to reduce leakage of light emitted from the light emitting layer 15b to the first conductive layer 15a of the adjacent light emitting element 15 by the light shielding portion 15w while ensuring a current path in each light emitting element 15. As a result, optical crosstalk can be suppressed.

[0059] In this embodiment, the second electrode 17 is common to each light-emitting element 15, and only one second electrode 17 is provided in the pixel chip 12. This makes it possible to reduce the number of electrodes per pixel chip 12 compared to a case in which each light-emitting element 15 is provided separately and a second electrode 17 is provided for each light-emitting element 15. As a result, the size of the pixel chip 12 can be reduced, and the occurrence of defects such as incorrect joining during mounting can be suppressed.

[0060] In this embodiment, each trench 15t is provided penetrating the first conductive layer 15a, and the light shielding portion 15w is provided at least on the light emitting surface 15s side of each trench 15t. This makes it possible to reduce leakage of light emitted from the light emitting layer 15b to the first conductive layer 15a of the adjacent light emitting element 15 by the light shielding portion 15w. As a result, optical crosstalk can be suppressed.

[0061] In this embodiment, when the light-shielding portion 15w is provided along the inner wall of each trench 15t and functions as a reflection mirror that reflects the light emitted from the light-emitting layer 15b, it is possible to reduce the light emitted from the light-emitting layer 15b being reflected by the light-shielding portion 15w and leaking to the first conductive layer 15a of the adjacent light-emitting element 15. As a result, optical crosstalk can be suppressed.

[0062] In this embodiment, color conversion units 125G and 125R are provided in each pixel chip 12, and the color conversion unit 125G performs color conversion on the blue light emitted from the light emitting element 15 provided corresponding to the color conversion unit 125G, and the color conversion unit 125R performs color conversion on the blue light emitted from the light emitting element 15 provided corresponding to the color conversion unit 125R. This allows a plurality of light emitting elements 15 that emit light of the same color to be fabricated in a common semiconductor layer, so the size of the pixel chip 12 can be reduced compared to the case where each light emitting element is formed separately. In addition, the light emitted from each light emitting element 15 can be reduced from leaking to the first conductive layer 15a of the adjacent light emitting element 15 by the light shielding portion 15w formed in the trench 15t formed in the common semiconductor layer (first conductive layer 15a). Therefore, it is possible to suppress optical crosstalk while reducing the size of the pixel chip 12.

[0063] In this embodiment, when the color conversion unit 125G, 125R is composed of a block including a plurality of quantum dot phosphors and light scatterers, the light (blue light) incident on the color conversion unit 125G, 125R is scattered by the light scatterers, so that the blue scattered light can be efficiently absorbed by the phosphors. This increases the conversion efficiency in the color conversion unit 125G, 125R compared to when the light scatterers are not provided, so that the intensity of the light (blue light) incident on the color conversion unit 125G, 125R can be lowered compared to when the light scatterers are not provided. In this case, the amount of light leaking to the first conductive layer 15a of the adjacent light emitting element 15 can be reduced. Therefore, optical crosstalk can be suppressed.

[0064] In this embodiment, the color conversion units 125G and 125R are formed of blocks of multiple quantum dot phosphors bound with a resin binder, and even if they do not contain a light scattering material, the light emitted from the light emitting layer 15b is blocked by the light shielding unit 15w, and leakage to the first conductive layer 15a of the adjacent light emitting element 15 can be reduced. As a result, optical crosstalk can be suppressed.

[0065] In this embodiment, the second electrode 17 is provided on the surface of the first conductive layer 15a opposite to the light emitting surface 15s. As a result, for example, as shown in FIG. 7M, the light emitting element layer 142 can be electrically connected to the wiring board 13 by simply bonding the light emitting element layer 142 to the wiring board 13. Therefore, even if the resolution of the pixels is increased, the occurrence of defects such as incorrect joining during mounting can be suppressed.

[0066] <2. Modifications> Next, a modification of the display device 100 according to the above embodiment will be described.

[0067] [Variation A] 9 shows an example of a planar layout of the mounting substrate 110A in the display device 100 according to the embodiment. A plurality of pixel chips 12 arranged in a matrix are mounted on the mounting substrate 110A. The pixel chips 12 are, for example, 1 μm or more and 100 μm or less in size, and are called micro LEDs. The pixel chip 12 may be, for example, a mini LED having a size of more than 100 μm and 200 μm or less. The pixel chip 12 is provided with one pixel 11.

[0068] The pixel 11 includes, for example, three pixels 11G, 11B, and 11R that emit light of different colors. That is, the pixel chip 12 includes, for example, three pixels 11G, 11B, and 11R that emit light of different colors. In the pixel chip 12, the three pixels 11G, 11B, and 11R are arranged, for example, in a row in the column direction.

[0069] In the mounting board 110A, the three electrodes (G electrode 13G, B electrode 13B, R electrode 13R) are arranged, for example, in a row in the column direction, and the C electrode 13C is arranged, for example, adjacent in the column direction to the three electrodes (G electrode 13G, B electrode 13B, R electrode 13R) arranged in a row in the column direction.

[0070] 10A to 10D show an example of a horizontal cross-sectional configuration of the pixel chip 12 according to this modified example. FIG. 11A to 11E show an example of a vertical cross-sectional configuration of the pixel chip 12. The horizontal cross-section refers to a cross-section parallel to the light-emitting surface 15s, and the vertical cross-section refers to a cross-section perpendicular to the light-emitting surface 15s. FIG. 10A shows an example of a cross-sectional configuration taken along line FF in FIG. 11A to 11E. FIG. 10B shows an example of a cross-sectional configuration taken along line GG in FIG. 11A to 11E. FIG. 10C shows an example of a cross-sectional configuration taken along line HH in FIG. 11A to 11E. FIG. 10D shows an example of a cross-sectional configuration taken along line II in FIG. 11A to 11E. FIG. 11A shows an example of a cross-sectional configuration taken along line AA in FIG. 10A to 10D. FIG. 11B shows an example of a cross-sectional configuration taken along line BB in FIG. 10A to 10D. Fig. 11C shows an example of a cross-sectional configuration taken along line CC in Fig. 10A to Fig. 10D. Fig. 11D shows an example of a cross-sectional configuration taken along line DD in Fig. 10A to Fig. 10D. Fig. 11E shows an example of a cross-sectional configuration taken along line EE in Fig. 10A to Fig. 10D.

[0071] As described above, the pixel chip 12 has three pixels 11G, 11B, and 11R. In the pixel chip 12, each of the pixels 11G, 11B, and 11R has a light-emitting element 15 that emits light of the same color (blue light) regardless of the pixel, and has an optical member having a different color conversion function for each pixel on the light emission surface 15s of the light-emitting element 15. That is, in the pixel chip 12, each of the pixels 11G, 11B, and 11R is configured to emit light of different emission colors using the optical member.

[0072] As shown in FIG. 11A and FIG. 11C, the pixel 11G has a light emitting element 15 and a color conversion unit 125G provided on a light emission surface 15s of the light emitting element 15. The color conversion unit 125G corresponds to the optical member. The color conversion unit 125G is provided corresponding to the light emitting element 15 provided directly under the color conversion unit 125G. The light emitting element 15 emits light (blue light) to the color conversion unit 125G through the light emission surface 15s. The color conversion unit 125G performs color conversion (wavelength conversion) on the blue light emitted from the corresponding light emitting element 15. The color conversion unit 125G converts the incident blue light into green light, and emits the green light obtained by the color conversion to the opposite side to the light emitting element 15 side. The pixel 11G emits green light of a desired emission intensity by driving the pixel circuit 14 by the gate driver 20 and the data driver 30.

[0073] 11A and 11D, the pixel 11B has a light-emitting element 15 and a light-transmitting portion 125C provided on a light-emitting surface 15s of the light-emitting element 15. The light-transmitting portion 125C corresponds to the optical member. The light-transmitting portion 125C is provided corresponding to the light-emitting element 15 provided directly below the light-transmitting portion 125C. The light-emitting element 15 emits light (blue light) to the light-transmitting portion 125C through the light-emitting surface 15s. The light-transmitting portion 125C transmits blue light emitted from the corresponding light-emitting element 15. The light-transmitting portion 125C transmits the incident blue light and emits it to the opposite side to the light-emitting element 15 side. That is, the light-transmitting portion 125C does not perform intentional color conversion. The pixel 11B emits blue light of a desired emission intensity by driving the pixel circuit 14 by the gate driver 20 and the data driver 30.

[0074] As shown in FIG. 11A and FIG. 11E, the pixel 11R has a light emitting element 15 and a color conversion unit 125R provided on a light emission surface 15s of the light emitting element 15. The color conversion unit 125R corresponds to the optical member. The color conversion unit 125R is provided corresponding to the light emitting element 15 provided directly under the color conversion unit 125R. The light emitting element 15 emits light (blue light) to the color conversion unit 125R through the light emission surface 15s. The color conversion unit 125R performs color conversion (wavelength conversion) on the blue light emitted from the corresponding light emitting element 15. The color conversion unit 125R converts the incident blue light into red light, and emits the red light obtained by the color conversion to the opposite side to the light emitting element 15 side. The pixel 11R emits red light of a desired emission intensity by driving the pixel circuit 14 by the gate driver 20 and the data driver 30.

[0075] (Light emitting element 15) As shown in FIG. 11A and FIG. 11C to FIG. 11E, the light emitting element 15 has a semiconductor layer formed by laminating a first conductive layer 15a having a light emitting surface 15s, a light emitting layer 15b, and a second conductive layer 15c in this order. The semiconductor layer is formed of, for example, a single crystal multilayer film of GaN and InGaN. The first conductive layer 15a is formed of, for example, an n-type semiconductor. The light emitting layer 15b is formed of, for example, a non-doped semiconductor. The second conductive layer 15c is formed of, for example, a p-type semiconductor.

[0076] The light emitting element 15 further includes a first electrode 16 in contact with the second conductive layer 15c and a second electrode 17 in contact with the first conductive layer 15a, as shown in, for example, Figures 11A to 11E. The first electrode 16 is in ohmic contact with the second conductive layer 15c, and is made of, for example, a multilayer film (Ni / Au) of nickel (Ni) and gold (Au). The second electrode 17 is in ohmic contact with the first conductive layer 15a, and is made of, for example, a multilayer film (Ti / Al) of titanium (Ti) and aluminum (Al) or a multilayer film (Cr / Au) of chromium (Cr) and gold (Au).

[0077] In the semiconductor layer, for example, as shown in Figures 11C to 11E, a mesa portion protruding toward the wiring board 13 side is formed by a part of the first conductive layer 15a, the light emitting layer 15b, and the second conductive layer 15c. A first electrode 16 is disposed on the top of the mesa portion, and a second electrode 17 is disposed at the base of the mesa portion. That is, the second electrode 17 is provided on the surface of the first conductive layer 15a opposite to the light emitting surface 15s, and the first electrode 16 and the second electrode 17 are provided on the surface of the pixel chip 12 opposite to the light emitting surface 15s.

[0078] In each light-emitting element 15 of the pixel chip 12, the second electrode 17 is shared with each other, for example, as shown in FIG. 11C to FIG. 11E. Furthermore, in each light-emitting element 15 of the pixel chip 12, the first conductive layer 15a is shared with each other, for example, as shown in FIG. 10B. That is, in the pixel chip 12, the first conductive layer 15a of each light-emitting element 15 is integrally formed. In each light-emitting element 15, the first conductive layer 15a has a current path P from a portion facing the first electrode 16 to a portion facing the second electrode 17. In the light-emitting element 15 of the pixel 11G, for example, as shown in FIG. 10B and FIG. 11C, the first conductive layer 15a has a current path Pgc from a portion facing the first electrode 16G to a portion facing the second electrode 17. The light-emitting element 15 of the pixel 11B has a current path Pbc in the first conductive layer 15a from a portion facing the first electrode 16B to a portion facing the second electrode 17, as shown in, for example, FIG. 10B and FIG. 11D. The light-emitting element 15 of the pixel 11R has a current path Prc in the first conductive layer 15a from a portion facing the first electrode 16R to a portion facing the second electrode 17, as shown in, for example, FIG. 10B and FIG. 11E. That is, in the pixel chip 12, the first conductive layer 15a has three current paths Pgc, Pbc, Prc that are parallel to each other. Note that, since the second electrode 17 extends in the row direction in the pixel chip 12, the ends of the current paths Pgc, Pbc, Prc are provided in different portions from each other, but are provided within the portion of the first conductive layer 15a that faces the second electrode 17.

[0079] In the first conductive layer 15a, for example, as shown in Figures 10B and 11A, a trench 15t is provided in a region between two adjacent current paths Pgc, Pbc. In the first conductive layer 15a, a trench 15t is further provided in a region between two adjacent current paths Pbc, Prc. In addition, the pixel chip 12 has a light-shielding portion 15w in each trench 15t formed in the first conductive layer 15a, for example, as shown in Figures 10B and 11A.

[0080] 11B to 11E, the pixel chip 12 further has a light-transmitting portion 125C (light-transmitting portion 125Ca) in addition to the light-transmitting portion 125C provided in the pixel 11B on a portion of the upper surface of the first conductive layer 15a facing the second electrode 17. The pixel chip 12 further has a light-shielding layer 129 covering the surface of the light-transmitting portion 125Ca opposite to the first conductive layer 15a side, as shown in FIG. 11B to 11E.

[0081] The pixel chip 12 further includes a light-shielding portion 126 that separates the color conversion portion 125G, the color conversion portion 125R, the light transmission portion 125C, and the light transmission portion 125Ca from one another, as shown in, for example, Figures 10A and 11A to 11E. The pixel chip 12 may further include a protective layer 127, as necessary, as shown in, for example, Figures 11A to 11E.

[0082] In the pixel chip 12, the three first electrodes 16 (16G, 16B, 16R) included in each of the pixels 11G, 11B, 11R are arranged, for example, in a line in the column direction, and the second electrode 17 shared by each of the pixels 11G, 11B, 11R is arranged, for example, adjacent in the column direction to the three electrodes (G electrode 13G, B electrode 13B, R electrode 13R) arranged in a line in the column direction. In this case, the second electrode 17 extends longer in the column direction than the first electrode 16, for example, and is larger in size than the first electrode 16.

[0083] [effect] Next, the effects of the display device 100 according to this modification will be described.

[0084] In this modification, similarly to the above embodiment, the second electrode 17 is shared among the light-emitting elements 15, and only one second electrode 17 is provided in the pixel chip 12. This allows the number of electrodes per pixel chip 12 to be reduced compared to the case where each light-emitting element 15 is provided separately and a second electrode 17 is provided for each light-emitting element 15. Furthermore, in this modification, three pixels 11G, 11B, and 11R are arranged in a row in the column direction in the pixel chip 12, and are arranged adjacent to three electrodes (G electrode 13G, B electrode 13B, and R electrode 13R) in the column direction. This allows the size of the second electrode 17 to be increased, and the synergistic effect of reducing the number of electrodes per pixel chip 12 further reduces the occurrence of defects such as joint errors during mounting.

[0085] [Variation B] In the above embodiment and its modified example, for example, as shown in Fig. 12 and Fig. 13, a plurality of trenches 15t may be provided in a region between two adjacent current paths Pgc, Pbc, and a plurality of trenches 15t may be provided in a region between two adjacent current paths Pbc, Prc. In this case, in the region between two adjacent current paths Pgc, Pbc, the plurality of trenches 15t are arranged in such a manner as to interrupt a line connecting the two adjacent current paths Pgc, Pbc with each other in a straight line. Furthermore, in the region between two adjacent current paths Pbc, Prc, the plurality of trenches 15t are arranged in such a manner as to interrupt a line connecting the two adjacent current paths Pbc, Prc with each other in a straight line.

[0086] In this case, a gap g1 is generated between the trenches 15t in the region between the two adjacent current paths Pgc and Pbc, and a current may flow between the two adjacent current paths Pgc and Pbc through the gap g1. However, the trenches 15t can prevent the light (blue light) generated in the pixel 11G from leaking to the adjacent pixel 11B and the light (blue light) generated in the pixel 11B from leaking to the adjacent pixel 11G. Similarly, a gap g2 is generated between the trenches 15t in the region between the two adjacent current paths Pbc and Prc, and a current may flow between the two adjacent current paths Pbc and Prc through the gap g2. However, the trenches 15t can prevent the light (blue light) generated in the pixel 11B from leaking to the adjacent pixel 11R and the light (blue light) generated in the pixel 11R from leaking to the adjacent pixel 11B. Moreover, by providing the gaps g1 and g2 to expand the current path, it is possible to reduce the electrical resistance in the current path, which in turn makes it possible to reduce power consumption when driving the pixel.

[0087] 14 and 15, in the region between two adjacent current paths Pgc and Pbc, the trenches 15t may be arranged in a row with a predetermined gap g1 between them. Furthermore, in the region between two adjacent current paths Pbc and Prc, the trenches 15t may be arranged in a row with a predetermined gap g21 between them. In this case, some light leakage may occur through the gaps g1 and g2, but the light leakage can be suppressed compared to the case where the trenches 15t are not provided.

[0088] [Variation C] In the above embodiment and its modified examples, pixel chip 12 has three pixels (11R, 11G, 11B) that emit light of three luminescent colors of R, G, and B. However, in the above embodiment and its modified examples, pixel chip 12 may have three pixels that emit light of three luminescent colors that are a combination different from R, G, and B. Also, in the above embodiment and its modified examples, pixel chip 12 may have two pixels or four or more pixels that emit light of different luminescent colors.

[0089] In the above embodiment and its modified examples, the pixel chip 12 may have four pixels 11R, 11B, 11G, and 11Y that emit light of different colors, as shown in FIG. 16. In the above embodiment and its modified examples, the pixel chip 12 may have two pixels 11B and 11Y that emit light of different colors, as shown in FIG. 17. Here, the pixel 11Y is a pixel that emits yellow light, and has a color conversion section 125Y that converts blue light emitted from the light-emitting element 15 into yellow light. At this time, the first electrode 16 of the light-emitting element 15 included in the pixel 11Y is electrically connected to the Y electrode 13Y of the wiring board 13 via the metal bump 128.

[0090] The color conversion unit 125Y, for example, absorbs the excitation light (blue light) emitted from the light emitting element 15 and converts the wavelength. The color conversion unit 125Y is, for example, composed of a block in which a plurality of quantum dot phosphors are bound with a resin binder. The color conversion unit 125Y may further include, for example, a light scattering body that scatters the excitation light (blue light) emitted from the light emitting element 15. The quantum dot phosphor absorbs the excitation light (blue light) emitted from the light emitting element 15 and emits fluorescence. The quantum dot phosphor included in the color conversion unit 125Y is, for example, a particulate phosphor that emits fluorescence with a yellow wavelength of 570 nm or more and 590 nm or less.

[0091] In this way, even when a pixel 11Y having a color conversion unit 125Y is provided, the pixel 11Y shares the first conductive layer 15a and the second electrode 17 with the other pixels 11R, 11B, and 11G, and has one or more trenches 15t (light shielding portions 15w) between the pixel 11Y and a pixel adjacent to the pixel 11Y. This makes it possible to ensure a current path P in each light-emitting element 15, while reducing leakage of light emitted from the light-emitting layer 15b to the first conductive layer 15a of the adjacent light-emitting element 15 by the light shielding portions 15w. As a result, optical crosstalk can be suppressed.

[0092] [Variation D] In the above modification C, the pixel chip 12 may have, for example, four pixels 11R, 11B, 11G, and 11W that emit light of different colors, as shown in Fig. 18. Here, the pixel 11W is a pixel that emits white light, and has a color conversion section 125W that converts blue light emitted from the light-emitting element 15 into white light. In this case, the first electrode 16 of the light-emitting element 15 included in the pixel 11W is electrically connected to the W electrode 13W of the wiring board 13 via the metal bump 128.

[0093] The color conversion unit 125W is configured, for example, with a block in which the content of quantum dot phosphor that absorbs excitation light (blue light) and emits yellow wavelength fluorescence is reduced in the color conversion unit 125Y of the above modification C. The color conversion unit 125W emits white light, for example, by mixing the excitation light (blue light) that transmits through the color conversion unit 125W with the yellow wavelength fluorescence emitted from the quantum dot phosphor.

[0094] The color conversion unit 125W may be configured, for example, as a block in which a plurality of quantum dot phosphors that absorb excitation light (blue light) and emit fluorescence of red wavelengths and a plurality of quantum dot phosphors that absorb excitation light (blue light) and emit fluorescence of green wavelengths are bound with a resin binder. In this case, the color conversion unit 125W emits white light by, for example, mixing the excitation light (blue light) that passes through the color conversion unit 125W with the fluorescence of red wavelengths and the fluorescence of green wavelengths emitted from the plurality of quantum dot phosphors included in the block.

[0095] In this way, even when a pixel 11W having a color conversion unit 125W is provided, the pixel 11W shares the first conductive layer 15a and the second electrode 17 with the other pixels 11R, 11B, and 11G, and has one or more trenches 15t (light shielding portions 15w) between the pixel 11W and a pixel adjacent to the pixel 11W. This makes it possible to ensure a current path P in each light-emitting element 15, while reducing leakage of light emitted from the light-emitting layer 15b to the first conductive layer 15a of the adjacent light-emitting element 15 by the light shielding portions 15w. As a result, optical crosstalk can be suppressed.

[0096] [Variation E] In the above embodiment and its modified examples, the pixel chip 12 has a plurality of light-emitting elements 15 that emit blue light. However, the pixel chip 12 may have a plurality of light-emitting elements 160 that emit ultraviolet light having an emission wavelength of 360 nm or more and 430 nm or less, as shown in, for example, Figures 19, 20, 21, and 22. The light-emitting element 160 has a similar configuration to the light-emitting element 15, except that it has a light-emitting layer 15b that emits ultraviolet light.

[0097] In this modification, the pixel 11G has a color conversion section 125G, for example, as shown in Figs. 19, 20, and 22. The pixel 11B has a color conversion section 125B, for example, as shown in Figs. 19 to 22. The pixel 11R has a color conversion section 125R, for example, as shown in Figs. 19, 20, and 22. The pixel 11Y has a color conversion section 125Y, for example, as shown in Figs. 20 and 21. The pixel 11W has a color conversion section 125W, for example, as shown in Fig. 22.

[0098] The color conversion units 125G, 125R, 125B, and 125W, for example, absorb and convert the wavelength of the excitation light (ultraviolet light) emitted from the light emitting element 160. The color conversion units 125G, 125R, 125B, and 125W may further include, for example, a light scattering body that scatters the excitation light (ultraviolet light) emitted from the light emitting element 160. The light scattering body is made of, for example, a material with a refractive index different from the refractive index of the resin contained in the color conversion units 125G, 125R, 125B, and 125W.

[0099] The quantum dot phosphor absorbs the excitation light (ultraviolet light) emitted from the light emitting element 160 and emits fluorescence. The quantum dot phosphor included in the color conversion unit 125G is, for example, a particulate phosphor that emits fluorescence with a green wavelength of 500 nm or more and 550 nm or less. The quantum dot phosphor included in the color conversion unit 125B is, for example, a particulate phosphor that emits fluorescence with a blue wavelength of 430 nm or more and 500 nm or less. The quantum dot phosphor included in the color conversion unit 125R is, for example, a particulate phosphor that emits fluorescence with a red wavelength of 610 nm or more and 780 nm or less. The quantum dot phosphor included in the color conversion unit 125Y is, for example, a particulate phosphor that emits fluorescence with a yellow wavelength of 570 nm or more and 590 nm or less. The quantum dot phosphor included in the color conversion unit 125W is, for example, a particulate phosphor that emits fluorescence with a yellow wavelength of 570 nm or more and 590 nm or less. The multiple quantum dot phosphors contained in the color conversion unit 125W may be composed, for example, of multiple particulate phosphors that emit fluorescence with a red wavelength of 610 nm or more and 780 nm or less, and multiple particulate phosphors that emit fluorescence with a green wavelength of 500 nm or more and 550 nm or less.

[0100] Quantum dot phosphors include, for example, CdS, CdSe, ZnS, ZnSe, InAgS, and CsPbCl. x Br 3-x The quantum dot phosphor is composed of a solid solution or a multilayer structure containing one or more kinds of materials selected from the following. The quantum dot phosphor may be, for example, a phosphor particle of an oxide, a fluoride, or a nitride dispersed and solidified, or may be an organic phosphor.

[0101] The resin mixed with the quantum dot phosphor is for dispersing the quantum dot phosphor uniformly, and is made of, for example, a material that is optically transparent to the light (ultraviolet light) emitted from the light emitting element 160. The resin mixed with the quantum dot phosphor is made of, for example, an acrylic, epoxy, or silicone resin material.

[0102] The second electrodes 17 are shared among the light-emitting elements 160 of the pixel chip 12. Furthermore, the first conductive layers 15a are shared among the light-emitting elements 160 of the pixel chip 12. That is, the first conductive layers 15a of the light-emitting elements 160 of the pixel chip 12 are integrally formed. Each light-emitting element 160 has a current path P in the first conductive layer 15a from a portion facing the first electrode 16 to a portion facing the second electrode 17. The first conductive layer 15a has one or more trenches 15t in a region between two adjacent current paths P. A light-shielding portion 15w is provided in each trench 15t formed in the first conductive layer 15a.

[0103] (operation) Next, the operation of the display device 100 according to this modification will be described.

[0104] (Display device 100 including pixel chip 12 of FIG. 19) Each light emitting element 160 in the pixel chip 12 is driven by the gate driver 20 and the data driver 30 to emit ultraviolet light L UV The ultraviolet light L emitted from the first light emitting element 160 in the pixel chip 12 UV The color conversion unit 125G produces green light L G The converted light (green light L G ) is emitted to the outside as light from the pixel 11G. Also, ultraviolet light L UV The color conversion unit 125B converts blue light L B The converted light (blue light L B) is emitted to the outside as light from the pixel 11B. UV The color conversion unit 125R converts red light L R The converted light (red light L R ) is emitted to the outside as light of the pixel 11R. From each pixel chip 12 arranged on the mounting substrate 110A, three lights with different emission colors (green light L G , blue light L B , red light L R ) is emitted at a predetermined intensity. Three lights of different emission colors (green light L G , blue light L B , red light L R ) forms image light, and when this image light strikes the user's retina, the user recognizes that an image is being displayed on the display panel 110.

[0105] (Display device 100 including pixel chip 12 of FIG. 20) Each light emitting element 160 in the pixel chip 12 is driven by the gate driver 20 and the data driver 30 to emit ultraviolet light L UV The ultraviolet light L emitted from the first light emitting element 160 in the pixel chip 12 UV The color conversion unit 125G produces green light L G The converted light (green light L G ) is emitted to the outside as light from the pixel 11G. Also, ultraviolet light L UV The color conversion unit 125B converts blue light L B The converted light (blue light L B ) is emitted to the outside as light from the pixel 11B. UV The color conversion unit 125R converts red light L R The converted light (red light L R The ultraviolet light L emitted from the fourth light-emitting element 160 in the pixel chip 12 is emitted to the outside as light of the pixel 11R.UV The color conversion unit 125Y converts the yellow light Y The converted light (yellow light L Y ) is emitted to the outside as light of the pixel 11Y. Four lights with different emission colors (green light L G , blue light L B , red light L R , yellow light L Y ) is emitted at a predetermined intensity. Four lights of different emission colors (green light L G , blue light L B , red light L R , yellow light L Y ) forms image light, and when this image light strikes the user's retina, the user recognizes that an image is being displayed on the display panel 110.

[0106] (Display device 100 including pixel chip 12 of FIG. 21) Each light emitting element 160 in the pixel chip 12 is driven by the gate driver 20 and the data driver 30 to emit ultraviolet light L UV The ultraviolet light L emitted from the first light emitting element 160 in the pixel chip 12 UV The color conversion unit 125B converts blue light L B The converted light (blue light L B ) is emitted to the outside as light from the pixel 11B. UV The color conversion unit 125Y converts the yellow light Y The converted light (yellow light L Y ) is emitted to the outside as light of the pixel 11Y. From each pixel chip 12 arranged on the mounting substrate 110A, two lights with different emission colors (blue light L B , yellow light L Y ) is emitted at a predetermined intensity. Two lights of different emission colors (blue light L B , yellow light L Y) forms image light, and when this image light strikes the user's retina, the user recognizes that an image is being displayed on the display panel 110.

[0107] (Display device 100 including pixel chip 12 of FIG. 22) Each light emitting element 160 in the pixel chip 12 is driven by the gate driver 20 and the data driver 30 to emit ultraviolet light L UV The ultraviolet light L emitted from the first light emitting element 160 in the pixel chip 12 UV The color conversion unit 125G produces green light L G The converted light (green light L G ) is emitted to the outside as light from the pixel 11G. Also, ultraviolet light L UV The color conversion unit 125B converts blue light L B The converted light (blue light L B ) is emitted to the outside as light from the pixel 11B. UV The color conversion unit 125R converts red light L R The converted light (red light L R The ultraviolet light L emitted from the fourth light-emitting element 160 in the pixel chip 12 is emitted to the outside as light of the pixel 11R. UV The color conversion unit is 125W and produces white light. Y and the converted light (white light L W ) is emitted to the outside as light from the pixel 11W. From each pixel chip 12 arranged on the mounting substrate 110A, four lights with different emission colors (green light L G , blue light L B , red light L R , white light L W ) is emitted at a predetermined intensity. Four lights of different emission colors (green light L G , blue light L B , red light L R , white light L W) forms image light, and when this image light strikes the user's retina, the user recognizes that an image is being displayed on the display panel 110.

[0108] In this modification, similarly to the above embodiment and its modifications, in each light-emitting element 160, the current path P is secured, while the light-shielding portion 15w reduces leakage of light emitted from the light-emitting layer 15b to the first conductive layer 15a of the adjacent light-emitting element 15. As a result, optical crosstalk can be suppressed.

[0109] [Variation F] In the above-described embodiment and its modified examples, the pixel chip 12 may have a color filter 170 above the optical element 15 and the optical member 125a provided for each pixel, as shown in Fig. 27. The optical member 125a is a member corresponding to the color conversion unit 125G, the color conversion unit 125R, or the color conversion unit 125Y, for example, and may have a protective layer 127 as necessary.

[0110] The color filter 170 provided directly above the member corresponding to the color conversion unit 125G is a member that selectively transmits green light contained in the light emitted from the member corresponding to the color conversion unit 125G. The color filter 170 provided directly above the member corresponding to the color conversion unit 125R is a member that selectively transmits red light contained in the light emitted from the member corresponding to the color conversion unit 125R. The color filter 170 provided directly above the member corresponding to the color conversion unit 125Y is a member that selectively transmits yellow light contained in the light emitted from the member corresponding to the color conversion unit 125Y. In other words, the color filter 170 is a filter that attenuates the blue light component emitted from the light emitting element 160 and leaking from the optical member 125a.

[0111] In this modification, a color filter 170 is provided to attenuate the blue light component leaking from the optical member 125a, thereby making it possible to provide the user with image light with high color purity.

[0112] [Variation G] In the above-described embodiment and its modified examples, the pixel chip 12 may have a color filter 170 above the optical element 160 and the optical member 125b provided for each pixel, as shown in Fig. 28. The optical member 125b is a member corresponding to the color conversion unit 125G, the color conversion unit 125B, the color conversion unit 125R, the color conversion unit 125Y, or the color conversion unit 125W, and may have a protective layer 127 as necessary.

[0113] The color filter 170 provided directly above the member corresponding to the color conversion unit 125G is a member that selectively transmits green light contained in the light emitted from the member corresponding to the color conversion unit 125G. The color filter 170 provided directly above the member corresponding to the color conversion unit 125B is a member that selectively transmits blue light contained in the light emitted from the member corresponding to the color conversion unit 125B. The color filter 170 provided directly above the member corresponding to the color conversion unit 125R is a member that selectively transmits red light contained in the light emitted from the member corresponding to the color conversion unit 125R. The color filter 170 provided directly above the member corresponding to the color conversion unit 125Y is a member that selectively transmits yellow light contained in the light emitted from the member corresponding to the color conversion unit 125Y. The color filter 170 provided directly above the member corresponding to the color conversion unit 125W is a member that selectively transmits blue light, red light, and green light contained in the light emitted from the member corresponding to the color conversion unit 125W. In other words, the color filter 170 is a filter that attenuates the ultraviolet light component that is emitted from the light emitting element 160 and leaks from the optical member 125b.

[0114] In this modification, a color filter 170 is provided to attenuate the ultraviolet light component leaking from the optical member 125b. This makes it possible to provide the user with image light with less ultraviolet light components that may adversely affect the user's eyes.

[0115] In this modification, the color filter 170 provided directly above the members corresponding to the color conversion units 125G, 125R, and 125Y may be a filter that attenuates not only the ultraviolet light component but also the blue light component. In this case, it is possible to provide the user with image light with high color purity and with less ultraviolet light component that may adversely affect the user's eyes.

[0116] [Variation H] In the above embodiment and its modified examples, a light transmitting portion 125C that transmits light emitted from the light emitting element 15 may be provided for at least one light emitting element 15. In this case, it is possible to provide pixels of color components of light emitted from the light emitting element 15 on the pixel chip 12 without using phosphors. Therefore, it is possible to obtain pixels with desired light emission intensity that are not dependent on the conversion efficiency of phosphors, etc.

[0117] Although the present disclosure has been described above by way of an embodiment, the present disclosure is not limited to the above embodiment and various modifications are possible. Note that the effects described in this specification are merely examples. The effects of the present disclosure are not limited to the effects described in this specification. The present disclosure may have effects other than those described in this specification.

[0118] Furthermore, for example, the present disclosure can have the following configuration. (1) A light emitting device including a plurality of light emitting elements, each of which has a semiconductor layer formed by laminating a first conductive layer having a light emitting surface, a light emitting layer, and a second conductive layer in this order, and has a first electrode in contact with the second conductive layer and a second electrode in contact with the first conductive layer, and which emits light from the light emitting layer through the light emitting surface, In each of the light-emitting elements, the first conductive layer and the second electrode are shared by each other, Each of the light emitting elements has a current path in the first conductive layer from a portion facing the first electrode to a portion facing the second electrode, The first conductive layer is provided with one or more trenches in a region between two adjacent current paths; The light emitting device further comprises a first light shielding portion disposed within the one or more trenches. Light emitting device. (2) the one or more trenches extend through the first conductive layer; The first light-shielding portion is provided at least on the light-emitting surface side of the one or more trenches. The light-emitting device according to (1). (3) The first light-shielding portion is provided along an inner wall of the one or more trenches and functions as a reflection mirror that reflects light emitted from the light-emitting layer. A light-emitting device according to (1) or (2). (4) The plurality of trenches are arranged in a line with a predetermined gap therebetween. A light-emitting device according to any one of (1) to (3). (5) The plurality of trenches are arranged in such a manner as to interrupt a line connecting two adjacent current paths with each other in a straight line. A light-emitting device according to any one of (1) to (3). (6) Each of the light-emitting elements is an element that emits blue light, The light emitting device comprises: one or more color conversion units provided for one or more second light-emitting elements excluding at least one first light-emitting element among the plurality of light-emitting elements, the color conversion units performing color conversion on blue light emitted from the corresponding second light-emitting element; a second light-shielding portion provided at a position facing at least the light-shielding portion and partitioning the plurality of color conversion portions from one another; Further equipped A light-emitting device according to any one of (1) to (5). (7) The plurality of color conversion units include a first conversion unit that converts the blue light into green light and a second conversion unit that converts the blue light into red light. (6) A light-emitting device according to (6). (8) The plurality of color conversion units further includes a third conversion unit that converts the blue light into yellow light or white light. (7) A light-emitting device according to (7). (9) The one color conversion unit converts the blue light into yellow light. (6) A light-emitting device according to (6). (10) The color conversion unit further includes a filter unit that attenuates a blue light component contained in the light emitted from the one or more color conversion units. A light-emitting device according to any one of (6) to (9). (11) The one or more color conversion units are composed of blocks including phosphors and light scatterers. A light-emitting device according to any one of (6) to (10). (12) The one or more color conversion units are composed of blocks of phosphors bound together with a binder. A light-emitting device according to any one of (6) to (10). (13) Each of the light-emitting elements is an element that emits ultraviolet light, The light emitting device comprises: a plurality of color conversion units each provided for each of the plurality of light emitting elements, each performing color conversion on the ultraviolet light emitted from the corresponding light emitting element; a second light-shielding portion provided at a position facing at least the light-shielding portion and partitioning the plurality of color conversion portions from one another; Further equipped A light-emitting device according to any one of (1) to (5). (14) The plurality of color conversion units include a first conversion unit that converts the ultraviolet light into green light, a second conversion unit that converts the ultraviolet light into red light, and a third conversion unit that converts the ultraviolet light into blue light. The light-emitting device according to (13). (15) The plurality of color conversion units further includes a fourth conversion unit that converts the ultraviolet light into yellow light or white light. The light-emitting device according to (14). (16) The one color conversion unit converts the ultraviolet light into yellow light. The light-emitting device according to (13). (17) Further comprising a filter section for attenuating ultraviolet light components contained in the light emitted from the one or more color conversion sections. A light-emitting device according to any one of (13) to (16). (18) The plurality of color conversion units are constituted by blocks including phosphors and light scattering bodies. A light-emitting device according to any one of (13) to (17). (19) The color conversion units are each made of a block of phosphor bound with a binder. A light-emitting device according to any one of (13) to (17). (20) The second electrode is provided on the surface of the first conductive layer opposite to the light emitting surface. A light-emitting device according to any one of (1) to (19). (twenty one) A plurality of pixels each having a plurality of light emitting elements; Each of the light-emitting elements has a semiconductor layer formed by laminating a first conductive layer having a light emission surface, a light-emitting layer, and a second conductive layer in this order, and also has a first electrode in contact with the second conductive layer and a second electrode in contact with the first conductive layer, and emits light from the light-emitting layer through the light emission surface; In each of the light-emitting elements, the first conductive layer and the second electrode are shared by each other, Each of the light emitting elements has a current path in the first conductive layer from a portion facing the first electrode to a portion facing the second electrode, The first conductive layer is provided with one or more trenches in a region between two adjacent current paths; Each of the pixels further includes a first light shielding portion disposed within the one or more trenches. Display device.

[0119] According to the light-emitting device and display device of one aspect of the present disclosure, one or more trenches are provided in the first conductive layer in a region between two adjacent current paths, and a light-shielding portion is provided in the one or more trenches. Therefore, in each light-emitting element, the current path is secured, and the light emitted from the light-emitting layer can be reduced from leaking into the first conductive layer of the adjacent light-emitting element by the light-shielding portion. As a result, optical crosstalk can be suppressed compared to a case where such a light-shielding portion is not provided. Note that the effects of the present disclosure are not necessarily limited to the effects described herein, and may be any of the effects described in this specification.

[0120] This application claims priority based on Japanese Patent Application No. 2020-096343, filed on June 2, 2020 in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0121] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur to those skilled in the art depending on design requirements and other factors, and that such modifications are within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting device including a plurality of light-emitting elements, each of which has a semiconductor layer formed by laminating a first conductive layer having a light-emitting surface, a light-emitting layer, and a second conductive layer in this order, and which has a first electrode in contact with the second conductive layer and a second electrode in contact with the first conductive layer, and which emits light from the light-emitting layer through the light-emitting surface, In each of the light-emitting elements, the first conductive layer and the second electrode are shared by each other, Each of the light emitting elements has a current path in the first conductive layer from a portion facing the first electrode to a portion facing the second electrode, The first conductive layer is provided with one or more trenches in a region between two adjacent current paths; The light emitting device further comprises a first light shielding portion disposed in the one or more trenches. Light emitting device.

2. the one or more trenches are provided through the first conductive layer; The first light-shielding portion is provided at least on the light-emitting surface side of the one or more trenches.

10. The light emitting device of claim 1.

3. The first light-shielding portion is provided along an inner wall of the one or more trenches and functions as a reflection mirror that reflects light emitted from the light-emitting layer. The light emitting device of claim 2.

4. The plurality of trenches are arranged in a line with a predetermined gap therebetween.

10. The light emitting device of claim 1.

5. The plurality of trenches are arranged in such a manner as to interrupt a line connecting two adjacent current paths with each other in a straight line.

10. The light emitting device of claim 1.

6. Each of the light-emitting elements is an element that emits blue light, The light emitting device comprises: one or more color conversion units provided for one or more second light-emitting elements among the plurality of light-emitting elements, excluding at least one first light-emitting element, and performing color conversion on blue light emitted from the corresponding second light-emitting element; a second light-shielding portion provided at a position opposite to at least the first light-shielding portion and partitioning the plurality of color conversion portions from one another; Further equipped 10. The light emitting device of claim 1.

7. The plurality of color conversion units include a first conversion unit that converts the blue light into green light and a second conversion unit that converts the blue light into red light.

7. The light emitting device of claim 6.

8. The plurality of color conversion units further includes a third conversion unit that converts the blue light into yellow light or white light.

8. The light emitting device of claim 7.

9. The first color conversion unit converts the blue light into yellow light.

7. The light emitting device of claim 6.

10. The color conversion unit further includes a filter unit that attenuates a blue light component contained in the light emitted from the one or more color conversion units.

7. The light emitting device of claim 6.

11. The one or more color conversion units are formed of a block including a phosphor and a light scattering material.

7. The light emitting device of claim 6.

12. The one or more color conversion units are formed of blocks of phosphors bound together with a binder.

7. The light emitting device of claim 6.

13. Each of the light-emitting elements is an element that emits ultraviolet light, The light emitting device comprises: a plurality of color conversion units each provided for each of the plurality of light emitting elements, each performing color conversion on the ultraviolet light emitted from the corresponding light emitting element; a second light-shielding portion provided at a position opposite to at least the first light-shielding portion and partitioning the plurality of color conversion portions from one another; Further equipped 10. The light emitting device of claim 1.

14. The plurality of color conversion units include a first conversion unit that converts the ultraviolet light into green light, a second conversion unit that converts the ultraviolet light into red light, and a third conversion unit that converts the ultraviolet light into blue light.

14. The light emitting device of claim 13.

15. The plurality of color conversion units further includes a fourth conversion unit that converts the ultraviolet light into yellow light or white light.

15. The light emitting device of claim 14.

16. The color conversion unit further includes a filter unit that attenuates an ultraviolet light component contained in the light emitted from the color conversion units.

14. The light emitting device of claim 13.

17. The plurality of color conversion units are constituted by blocks including phosphors and light scattering bodies.

14. The light emitting device of claim 13.

18. The color conversion units are each made of a block of phosphor bound with a binder.

14. The light emitting device of claim 13.

19. The second electrode is provided on the surface of the first conductive layer opposite to the light emitting surface.

10. The light emitting device of claim 1.

20. A plurality of pixels each having a plurality of light emitting elements; Each of the light-emitting elements has a semiconductor layer formed by stacking a first conductive layer having a light emission surface, a light-emitting layer, and a second conductive layer in this order, and also has a first electrode in contact with the second conductive layer and a second electrode in contact with the first conductive layer, and emits light from the light-emitting layer through the light emission surface; In each of the light-emitting elements, the first conductive layer and the second electrode are shared by each other, Each of the light emitting elements has a current path in the first conductive layer from a portion facing the first electrode to a portion facing the second electrode, The first conductive layer is provided with one or more trenches in a region between two adjacent current paths; Each of the pixels further includes a first light shielding portion disposed within the one or more trenches. Display device.

Images