Dielectric composition and laminated electronic component containing same

Abstract

To provide a dielectric composition and a laminated electronic component including the same.SOLUTION: There is provided a dielectric composition includes a main component having a perovskite structure represented by ABO3 (A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf), and a sub-component, the first sub-component contains rare earth elements: 0.1 mol or more, Nb: 0.02 mol or more, and Mg: 0.25 mol or more and 0.9 mol or less with respect to 100 mol of the main component, and the sum of the contents of the rare earth element and Nb is 1.5 mol or less, and there is provided a laminated electronic component including the dielectric composition.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a dielectric composition and a multilayer electronic component including the same. [Background technology]

[0002] Multi-layered ceramic capacitors (MLCCs), one of the multi-layered electronic components, are chip-type capacitors that are installed on the printed circuit boards of various electronic products such as visual devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and serve to charge and discharge electricity.

[0003] Such multilayer ceramic capacitors have the advantages of being small yet having high capacitance and being easy to mount, and therefore can be used as components of various electronic devices. As various electronic devices such as computers and mobile devices become smaller and have higher output, there is an increasing demand for multilayer ceramic capacitors that are smaller and have higher capacitance.

[0004] In order to achieve miniaturization and high capacitance of multilayer ceramic capacitors, it is necessary to reduce the thickness of the dielectric layers and internal electrodes and increase the number of layers. Currently, the thickness of the dielectric layers has reached a level of approximately 0.6 μm, and the layers are becoming thinner.

[0005] However, as the thickness of the dielectric layer becomes thinner, there is a problem that reliability decreases and properties such as insulation resistance and breakdown voltage deteriorate.

[0006] In order to solve these problems, a new method is needed that can ensure high reliability not only in terms of the structure of the multilayer ceramic capacitor, but also in terms of the dielectric composition.

[0007] If a dielectric composition capable of further increasing the reliability level at the current level could be secured, it would be possible to manufacture multilayer ceramic capacitors with even thinner layers. Summary of the Invention [Problem to be solved by the invention]

[0008] An object of the present invention is to provide a dielectric composition having excellent reliability and a multilayer electronic component including the same.

[0009] Another object of the present invention is to provide a dielectric composition having excellent insulation resistance and a multilayer electronic device containing the same.

[0010] It is still another object of the present invention to provide a dielectric composition having a high breakdown voltage and a multilayer electronic device including the same.

[0011] It is still another object of the present invention to achieve miniaturization and high capacity of a multilayer electronic component. [Means for solving the problem]

[0012] One aspect of the present invention provides a dielectric composition comprising a main component having a perovskite structure represented by ABO3 (A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf), and a first auxiliary component, wherein the first auxiliary component contains, relative to 100 moles of the main component, 0.1 moles or more of rare earth element, 0.02 moles or more of Nb, and 0.25 moles or more and 0.9 moles or less of Mg, and the sum of the contents of the rare earth element and Nb is 1.5 moles or less.

[0013] Another aspect of the present invention provides a multilayer electronic component including a main body including a dielectric layer and an internal electrode, and an external electrode disposed on the main body and connected to the internal electrode, the dielectric layer including a dielectric composition, the dielectric composition including a main component having a perovskite structure represented by ABO3 (A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf), and a first subcomponent, the first subcomponent including, relative to 100 mol of the main component, 0.1 mol or more of rare earth element, 0.02 mol or more of Nb, and 0.25 mol or more and 0.9 mol or less of Mg, and the sum of the contents of the rare earth element and Nb is 1.5 mol or less. Effect of the Invention

[0014] One of the various effects of the present invention is that it is possible to improve the reliability of the dielectric composition and the multilayer electronic device containing the same.

[0015] However, the various and beneficial advantages and effects of the present invention are not limited to the above content, and can be more easily understood in the course of describing specific embodiments of the present invention. [Brief description of the drawings]

[0016] [Figure 1] 1 is a perspective view showing a schematic configuration of a multilayer electronic component according to an embodiment of the present invention; [Diagram 2] 2 is a cross-sectional view showing a schematic cross section taken along line II' in FIG. 1. [Diagram 3] FIG. 2 is a cross-sectional view showing a schematic cross section taken along line II-II' in FIG. [Figure 4] 1 is a graph showing the results of the severe reliability evaluation (Halt) for test numbers 1 to 3. [Diagram 5] IV curve for test numbers 4 to 6. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those having average knowledge in the art. Therefore, the shapes and sizes of elements in the drawings may be enlarged or reduced (or highlighted or simplified) for a clearer description.

[0018] In order to clearly explain the present invention, parts that are not relevant to the explanation are omitted in the drawings, thicknesses are enlarged to clearly show various layers and regions, and the same reference symbols are used for components that have the same functions within the same concept.

[0019] Furthermore, throughout the specification, unless specifically stated to the contrary, "comprising" an element means that it can further include other elements, rather than excluding other elements.

[0020] In the drawings, the X direction can be defined as the second direction, L direction, or length direction, the Y direction can be defined as the third direction, W direction, or width direction, and the Z direction can be defined as the first direction, stacking direction, T direction, or thickness direction.

[0021] Dielectric Composition A dielectric composition according to one embodiment of the present invention includes a main component having a perovskite structure represented by ABO3 (A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf), and a first auxiliary component, wherein the first auxiliary component includes, relative to 100 moles of the main component, 0.1 moles or more of rare earth element, 0.02 moles or more of Nb, and 0.25 moles or more and 0.9 moles or less of Mg, and the sum of the contents of the rare earth element and Nb is 1.5 moles or less.

[0022] The main component with the perovskite structure represented by ABO3 may have oxygen vacancies, which are missing sites where oxygen should be. For example, oxygen vacancies may occur when firing is performed in a reducing atmosphere, and oxygen vacancies may occur when carbon combines with the oxygen in ABO3 and evaporates in the form of CO2 due to binder removal, etc.

[0023] That is, O represents a -2 charge, but if a site where oxygen should be is missing, oxygen vacancies with a +2 charge are generated, and when the oxygen vacancies move due to the applied electric field, reliability decreases. Also, the more oxygen vacancies there are and the higher the temperature and voltage applied, the faster and more the movement increases, further worsening reliability.

[0024] In order to solve the problem of oxygen vacancies, a method is generally known in which rare earth elements are added to reduce the concentration of oxygen vacancies and thereby improve reliability.

[0025] However, in the ABO3 structure, the amount of additives that can dissolve in the A-site is limited, and the addition of rare earth elements alone may not effectively reduce the concentration of oxygen vacancies or may result in excessive semiconductivity, resulting in a decrease in insulation resistance.

[0026] Therefore, the present invention improves reliability by adding appropriate amounts of rare earth elements, Nb, and Mg as a first subcomponent to a dielectric composition containing a main component having a perovskite structure represented by ABO3 (A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf).

[0027] Each component of the dielectric composition according to one embodiment of the present invention will be described in detail below.

[0028] a) Main component According to one embodiment of the present invention, the dielectric composition includes a main component having a perovskite structure represented by ABO3 (where A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf).

[0029] More specific examples of the main component having a perovskite structure represented by ABO3 include BaTiO3, SrTiO3, (Ba 1-x Ca x )(Ti 1-y Ca y )O3 (where x is 0 ≦ x ≦ 0.3 and y is 0 ≦ y ≦ 0.1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (where x is 0 ≦ x ≦ 0.3 and y is 0 ≦ y ≦ 0.5), and Ba(Ti 1-y Zr y )O3 (where 0 < y ≦ 0.5), and can be one or more selected from the group consisting of these.

[0030] According to one embodiment of the present invention, the dielectric composition can have a room temperature dielectric constant of 2000 or more.

[0031] The above main component is not particularly limited, but the average particle size of the main component powder can be 40 nm or more and 200 nm or less.

[0032] b) First sub-component According to one embodiment of the present invention, the dielectric composition includes a first sub-component containing rare earth elements: 0.1 mol or more, Nb: 0.02 mol or more, and Mg: 0.25 mol or more and 0.9 mol or less, and the sum of the contents of the rare earth elements and Nb is 1.5 mol or less, per 100 mol of the above main component.

[0033] Rare earth elements substitute for the A-site of the ABO3 structure and act as donors, reducing the concentration of oxygen vacancies and improving reliability. Rare earth elements also act as barriers to prevent the flow of electrons at grain boundaries, suppressing an increase in leakage current. If the content of the rare earth element is less than 0.1 mol per 100 mol of the main component, the above effects may be insufficient.

[0034] Generally, in the ABO3 structure, the amount of additives that can dissolve in the A-site is limited, so that the concentration of oxygen vacancies is not effectively reduced by only adding rare earth elements, or the insulation resistance may decrease due to excessive semiconductivity.

[0035] In the ABO3 structure, the content of additives capable of dissolving in the B-site is higher than the content of additives capable of dissolving in the A-site, so in the present invention, Nb, which substitutes for the B-site of the ABO3 structure and plays the role of a donor, is added together with rare earth elements to improve reliability. If the content of Nb is less than 0.02 mol with respect to 100 mol of the main component, the above-mentioned effect may be insufficient.

[0036] Furthermore, Nb is arranged not only in the crystal grains of the dielectric but also in the crystal grain boundaries, thereby preventing a decrease in the insulation resistance of the multilayer ceramic capacitor and improving its reliability.

[0037] The higher the sum of the rare earth element and Nb contents, the more advantageous it is in terms of improving reliability, but if it exceeds a certain amount, it becomes semiconductive, degrading the insulating properties and reducing sinterability. Therefore, the sum of the rare earth element and Nb contents is preferably 1.5 moles or less per 100 moles of the main component.

[0038] Mg can substitute for the B-site of the ABO3 structure and act as an acceptor, thereby reducing the electron concentration.

[0039] Mg competitively replaces Nb for the B-site of the ABO3 structure, so its content must be appropriately adjusted.

[0040] When the Mg content is 0.25 to 0.9 moles relative to 100 moles of the main component, the effect of improving the reliability by converting the material to n-type can be maximized, and when the Mg content exceeds 0.9 moles, the breakdown voltage (BDV) may be lowered, which is undesirable. A more preferable range of the Mg content is 0.25 to 0.7 moles relative to 100 moles of the main component.

[0041] Meanwhile, the rare earth element is not particularly limited, and may be, for example, one or more of scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Lu).

[0042] However, when using a rare earth element having a larger ionic radius than Dy, such as lanthanum (La) or samarium (Sm), the Ba site can be substituted more effectively, which is more effective in reducing the oxygen vacancy defect concentration, but there is a risk of the insulation resistance being rapidly reduced due to excessive semiconductivity. Therefore, it is more preferable that the rare earth element is Dy or an element having a smaller ionic radius than Dy. Examples of rare earth elements having a smaller ionic radius than Dy include Ho, Y, Er, and Yb.

[0043] Furthermore, in consideration of both the reduction in oxygen vacancy defect concentration and the securing of insulation resistance, it is more preferable that the main component having the perovskite structure represented by ABO3 above is BaTiO3, and the rare earth element is Dy.

[0044] b) Second subcomponent According to one embodiment of the present invention, the dielectric composition may include, as a second minor component, an oxide or carbonate containing at least one of Mn, V, Cr, Fe, Ni, Co, Cu, and Zn.

[0045] As the second subcomponent, an oxide or carbonate containing at least one of Mn, V, Cr, Fe, Ni, Co, Cu, and Zn may be included in an amount of 0.1 to 2.0 mol per 100 mol of the main component.

[0046] The second subcomponent serves to lower the firing temperature of the multilayer ceramic capacitor to which the dielectric composition is applied, and to improve the high temperature withstand voltage characteristics.

[0047] The content of the second minor component and the content of the third minor component described below are amounts contained relative to 100 moles of the main component, and may be defined as moles of metal ions contained in each minor component.

[0048] If the content of the second subcomponent is less than 0.1 mol, the firing temperature becomes high, and there is a risk that the high temperature withstand voltage characteristics may be slightly deteriorated.

[0049] If the content of the second subcomponent is 2.0 moles or more, the high temperature withstand voltage characteristics and room temperature resistivity may be reduced.

[0050] In particular, the dielectric composition according to an embodiment of the present invention may include a second subcomponent having a content of 0.1 to 2.0 mol per 100 mol of the main component, thereby enabling low-temperature firing and obtaining high high-temperature withstand voltage characteristics.

[0051] c) Third subcomponent According to an embodiment of the present invention, the dielectric composition may include, as a third minor component, an oxide containing at least one of Si and Al, or a glass compound containing Si.

[0052] The dielectric composition may further include 0.001 to 0.5 mol of a third subcomponent which is an oxide containing at least one of Si and Al, or a glass compound containing Si, per 100 mol of the main component.

[0053] The content of the third minor component may be based on the content of at least one of Si and Al contained in the third minor component, regardless of the added form such as glass, oxide, or carbonate.

[0054] The third subcomponent serves to lower the firing temperature of the multilayer ceramic capacitor to which the dielectric composition is applied, and to improve the high-temperature withstand voltage characteristics.

[0055] If the content of the third subcomponent exceeds 0.5 moles per 100 moles of the main component, problems such as a decrease in sinterability and density and generation of a secondary phase may occur, which is not preferable.

[0056] In particular, according to one embodiment of the present invention, the dielectric composition contains Al in an amount of 0.5 mol or less, and since Al acts as an acceptor and can actually reduce the electron concentration, it is effective in improving reliability.

[0057] Multilayer Electronic Components FIG. 1 is a perspective view showing a schematic configuration of a multilayer electronic component according to an embodiment of the present invention.

[0058] FIG. 2 is a cross-sectional view showing a schematic cross section taken along line II' of FIG.

[0059] FIG. 3 is a cross-sectional view showing a schematic cross section taken along line II-II' of FIG.

[0060] 1 to 3, a multilayer electronic component 100 according to an embodiment of the present invention includes a body 110 including a dielectric layer 111 and internal electrodes 121, 122, and external electrodes 131, 132 disposed on the body 110 and connected to the internal electrodes 121, 122. The dielectric layer 111 includes a dielectric composition. The dielectric composition includes a main component having a perovskite structure represented by ABO3 (A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf), and a first subcomponent. The first subcomponent includes, relative to 100 moles of the main component, 0.1 moles or more of rare earth element, 0.02 moles or more of Nb, and 0.25 moles or more and 0.9 moles or less of Mg, and the sum of the contents of the rare earth element and Nb is 1.5 moles or less.

[0061] In the following, parts that overlap with the description of the dielectric composition described above will be omitted to avoid duplication. Also, a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, but the present invention can also be applied to various electronic products using the dielectric composition described above, such as inductors, piezoelectric elements, varistors, thermistors, etc.

[0062] The body 110 has dielectric layers 111 and internal electrodes 121 and 122 laminated alternately.

[0063] The specific shape of the body 110 is not particularly limited, but as shown in the drawings, the body 110 may be hexahedral or a similar shape. In addition, the body 110 may have a substantially hexahedral shape, although not a hexahedral shape having perfect straight lines, due to shrinkage of the ceramic powder contained in the body 110 during firing.

[0064] The main body 110 may have first and second surfaces 1, 2 facing each other in a first direction (Z direction), third and fourth surfaces 3, 4 connected to the first and second surfaces 1, 2 and facing each other in a second direction (X direction), and fifth and sixth surfaces 5, 6 connected to the first and second surfaces 1, 2 and also connected to the third and fourth surfaces 3, 4 and facing each other in the third direction (Y direction).

[0065] The multiple dielectric layers 111 forming the body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0066] The dielectric layer 111 can be formed using the dielectric composition described above.

[0067] The dielectric layer 111 may include a plurality of grains and grain boundaries disposed between adjacent grains.

[0068] In this case, Nb contained in the dielectric composition may be contained in the plurality of crystal grains and crystal grain boundaries. By disposing Nb not only in the crystal grains but also in the crystal grain boundaries, it is possible to prevent a decrease in the insulation resistance of the multilayer ceramic capacitor and improve reliability.

[0069] Also, the average grain size of the crystal grains may be 200 nm or less, in which case the effect of improving reliability and insulation resistance according to the present invention may be more significant.

[0070] Meanwhile, the main body 110 may include a first internal electrode 121 and a second internal electrode 122 arranged inside the main body 110 and facing each other with a dielectric layer 111 therebetween, and may include a capacitance forming portion A in which capacitance is formed, and cover portions 112, 113 formed on the upper and lower parts of the capacitance forming portion A.

[0071] The capacitance forming portion A is a portion that contributes to forming the capacitance of the capacitor, and can be formed by repeatedly laminating a plurality of first and second internal electrodes 121, 122 with the dielectric layer 111 interposed therebetween.

[0072] The upper cover part 112 and the lower cover part 113 may be formed by stacking a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming part A, respectively, and may basically serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0073] The upper cover part 112 and the lower cover part 113 do not include an internal electrode and may include the same material as the dielectric layer 111 .

[0074] That is, the upper cover part 112 and the lower cover part 113 may include a ceramic material, for example, a barium titanate (BaTiO3) based ceramic material.

[0075] Further, margin portions 114 and 115 may be disposed on the side surfaces of the capacitance forming portion A.

[0076] The margin portions 114, 115 include a margin portion 114 disposed on the sixth surface 6 of the body 110 and a margin portion 115 disposed on the fifth surface 5. That is, the margin portions 114, 115 can be disposed on both side surfaces of the ceramic body 110 in the width direction.

[0077] The margin portions 114 and 115 may refer to the regions between both ends of the first and second internal electrodes 121 and 122 and the boundary surface of the body 110 in a cross section of the body 110 cut in the width-thickness (WT) direction, as shown in FIG. 3.

[0078] The margins 114 and 115 essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0079] The margin portions 114 and 115 may be formed by applying a conductive paste to the ceramic green sheet except for the portions where the margin portions are to be formed, to form internal electrodes.

[0080] In addition, in order to suppress steps caused by the internal electrodes 121, 122, after lamination, the internal electrodes may be cut so as to be exposed on the fifth and sixth surfaces 5, 6 of the main body, and then a single dielectric layer or two or more dielectric layers may be laminated in the width direction on both side surfaces of the capacitance forming portion A to form margin portions 114, 115.

[0081] The internal electrodes 121 and 122 are laminated alternately with the dielectric layers 111 .

[0082] The internal electrodes 121, 122 may include first and second internal electrodes 121, 122. The first and second internal electrodes 121, 122 are alternately arranged to face each other with the dielectric layer 111 constituting the body 110 therebetween, and may be exposed to third and fourth surfaces 3, 4 of the body 110, respectively.

[0083] Referring to FIG. 2, the first internal electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4.

[0084] In this case, the first and second internal electrodes 121 and 122 may be electrically isolated from each other by the dielectric layer 111 disposed therebetween.

[0085] The body 110 can be formed by alternately stacking ceramic green sheets on which the first internal electrode 121 is printed and ceramic green sheets on which the second internal electrode 122 is printed, and then firing the stacked ceramic green sheets. The material for forming the internal electrodes 121 and 122 is not particularly limited, and any material having excellent electrical conductivity can be used.

[0086] For example, the internal electrodes can be formed by printing a conductive paste containing one or more of palladium (Pd), nickel (Ni), copper (Cu), and alloys thereof onto a ceramic green sheet.

[0087] The method for printing the conductive paste for the internal electrodes may be a screen printing method or a gravure printing method, but the present invention is not limited thereto.

[0088] On the other hand, in order to achieve miniaturization and high capacitance of a multilayer ceramic capacitor, it is necessary to reduce the thickness of the dielectric layers and the internal electrodes and increase the number of layers. However, as the thickness of the dielectric layers and the internal electrodes becomes thinner, the reliability decreases and properties such as insulation resistance and breakdown voltage may deteriorate.

[0089] Therefore, the thinner the dielectric layers and the internal electrodes are, the greater the effect of improving reliability according to the present invention.

[0090] In particular, when the thickness te of the internal electrodes 121 and 122 and the thickness td of the dielectric layer 111 are 0.41 μm or less, the effect of improving the reliability and insulation resistance according to the present invention can be significant.

[0091] The thickness te of the internal electrodes 121 and 122 may refer to the average thickness of the first and second internal electrodes 121 and 122 .

[0092] The thickness te of the internal electrodes 121, 122 can be measured by scanning an image of a cross section (WT cross section) of the body 110 in the third and first directions using a scanning electron microscope (SEM).

[0093] For example, for any internal electrode 121, 122 extracted from an image obtained by scanning a cross section (WT cross section) in the third and first directions cut at the center of the body 110 in the second direction (L direction) using a scanning electron microscope (SEM), the thickness can be measured at 30 equally spaced points in the third direction, and the average value can be calculated.

[0094] The 30 equally spaced points may be measured at a capacitance forming portion A, which means a region where the internal electrodes 121 and 122 overlap each other.

[0095] The thickness td of the dielectric layer 111 may refer to the average thickness of the dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.

[0096] Similar to the thickness te of the internal electrode, the thickness td of the dielectric layer 111 can also be measured by scanning images of the third and first direction cross sections (WT cross sections) of the main body 110 using a scanning electron microscope (SEM).

[0097] For example, in any dielectric layer 111 extracted from an image obtained by scanning a cross section (WT cross section) in the third and first directions cut at the center of the body 110 in the second direction (L direction) using a scanning electron microscope (SEM), the thickness can be measured at 30 equally spaced points in the third direction and the average value can be calculated.

[0098] The 30 equally spaced points may be measured at a capacitance forming portion A, which means a region where the internal electrodes 121 and 122 overlap each other.

[0099] There is no need to particularly limit the thickness of the covers 112 and 113. However, in order to more easily achieve a smaller size and higher capacity of the multilayer electronic component, the thickness tp of the covers 112 and 113 can be 20 μm or less.

[0100] The outer electrodes 131 and 132 are disposed on the body 110 and are connected to the inner electrodes 121 and 122 .

[0101] As shown in FIG. 2, the first and second external electrodes 131 and 132 may be disposed on third and fourth surfaces 3 and 4 of the body 110, respectively, and connected to the first and second internal electrodes 121 and 122, respectively.

[0102] In this embodiment, the multilayer electronic component 100 has a structure including two external electrodes 131, 132. However, the number and shapes of the external electrodes 131, 132 may vary depending on the configuration of the internal electrodes 121, 122 and other purposes.

[0103] Meanwhile, the external electrodes 131 and 132 may be formed using any material having electrical conductivity, such as a metal, and the specific material may be determined taking into consideration electrical characteristics, structural stability, etc., and may further have a multi-layer structure.

[0104] For example, the external electrodes 131, 132 may include electrode layers 131a, 132a disposed on the body 110 and plating layers 131b, 132b formed on the electrode layers 131a, 132a.

[0105] As a more specific example of the electrode layers 131a and 132a, the electrode layers 131a and 132a may be fired electrodes containing a conductive metal and glass, or may be resin-based electrodes containing a conductive metal and resin.

[0106] The electrode layers 131a and 132a may be formed by sequentially forming a fired electrode and a resin-based electrode on the main body. The electrode layers 131a and 132a may be formed by transferring a sheet containing a conductive metal onto the main body, or by transferring a sheet containing a conductive metal onto the fired electrode.

[0107] The conductive metal contained in the electrode layers 131a and 132a may be any material having excellent electrical conductivity, but is not limited thereto. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), and alloys thereof.

[0108] As a more specific example of the plating layers 131b, 132b, the plating layers 131b, 132b may be Ni plating layers or Sn plating layers, and may be in a form in which a Ni plating layer and a Sn plating layer are formed in order on the electrode layers 131a, 132a, or in a form in which a Sn plating layer, a Ni plating layer, and a Sn plating layer are formed in order. The plating layers 131b, 132b may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0109] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0110] However, in order to achieve both miniaturization and high capacity, the thickness of the dielectric layers and internal electrodes must be reduced and the number of layers must be increased. Therefore, the effect of improving reliability and insulation resistance according to the present invention can be more pronounced in multilayer electronic components having a size of 1005 (length x width, 1.0 mm x 0.5 mm) or less.

[0111] Therefore, when the distance between the third and fourth surfaces of the main body is defined as L, and the distance between the fifth and sixth surfaces is defined as W, L can be 1.0 mm or less, and W can be 0.5 mm or less. In other words, the multilayer electronic component can have a size of 1005 (length x width, 1.0 mm x 0.5 mm) or less.

[0112] (Example) In the embodiment of the present invention, additives such as Dy, Nb, Mg, binders, and organic solvents such as ethanol are added to barium titanate (BaTiO3) powder, which is the main component, and then wet-mixed to prepare a dielectric slurry, which is then coated on a carrier film and dried to prepare a ceramic green sheet, thereby forming a dielectric layer.

[0113] The ceramic green sheet can be produced by mixing ceramic powder, a binder, and a solvent to produce a slurry, and then forming the slurry into a sheet having a thickness of several μm using a doctor blade method.

[0114] Next, a conductive paste for the internal electrodes can be prepared, which contains 40 to 50 parts by weight of nickel powder, the average size of the nickel particles being 0.1 to 0.2 μm.

[0115] The conductive paste for the internal electrodes was applied onto the green sheets by a screen printing method to form internal electrodes, and the green sheets on which the internal electrode patterns were arranged were laminated to form a laminate, and then the laminate was compressed and cut.

[0116] The cut laminate was then heated to remove the binder, and then fired at high temperature in a reducing atmosphere to form a ceramic body.

[0117] In the above firing process, the material was fired in a reducing atmosphere (0.1% H2 / 99.9% N2, H2O / H2 / N2 atmosphere) at a temperature of 1100-1200°C for 2 hours, and then re-oxidized in a nitrogen (N2) atmosphere at 1000°C for 3 hours for heat treatment.

[0118] Next, the fired ceramic body was subjected to a termination process using copper (Cu) paste and then fired to form external electrodes.

[0119] Moreover, the dielectric layer 111 and the internal electrodes 121, 122 inside the ceramic body 110 were manufactured so that the average thickness after firing would be 0.4 μm or less.

[0120] Example 1 First, in order to confirm the effect of the sum of the Dy and Nb contents on reliability, test numbers 1 to 3 were produced through the above-mentioned manufacturing process so that the sum of the Dy and Nb contents was 1.5 mol (test number 1), 1.8 mol (test number 2), and 2.1 mol (test number 3) per 100 mol of the main component.

[0121] A severe reliability evaluation (Halt) was performed on the test pieces of the prototype multilayer ceramic capacitors (prototype MLCCs) Nos. 1 to 3 completed as described above.

[0122] 4 is a graph showing the results of the severe reliability evaluation (Halt) for test numbers 1 to 3. In the severe reliability evaluation, a voltage 1.5 times the reference voltage was applied for 12 hours at 125° C., and the change in insulation resistance was measured.

[0123] FIG. 4(a) shows the case of Test No. 1, in which the sum of the contents of Dy and Nb was added to 1.5 moles per 100 moles of the main component. It can be seen that there were no defects in the severe reliability evaluation and that the reliability was excellent.

[0124] Test No. 1 has a nominal capacity of 101% and a breakdown voltage (BDV) of 63V, and is therefore excellent in the reliability evaluations of capacity and BDV.

[0125] FIG. 4(b) shows the case of test number 2, in which the sum of the Dy and Nb contents was added to be 1.8 mol per 100 mol of the main component, and FIG. 4(c) shows the case of test number 3, in which the sum of the Dy and Nb contents was added to be 2.1 mol per 100 mol of Ti in the main component.

[0126] In both test numbers 2 and 3, many defects occurred in the severe reliability evaluation, and a decrease in reliability was confirmed.

[0127] In addition, test number 2 had a nominal capacity of 90% and a breakdown voltage (BDV) of 58V, while test number 3 had a nominal capacity of 82% and a breakdown voltage (BDV) of 47V, neither of which met the standards.

[0128] From these results, it can be confirmed that when the sum of the contents of Dy and Nb exceeds 1.5 moles per 100 moles of Ti in the main component, reliability decreases and sinterability is insufficient, making it difficult to ensure capacity.

[0129] Example 2 In order to confirm the electrical properties according to the change in Mg content, test numbers 4 to 6 were manufactured through the above-mentioned manufacturing process so that Dy, Nb, and Mg had the contents shown in Table 1 below for 100 moles of Ti in the main component.

[0130] The capacitance, DF (Dissipation Factor), and BDV (Breaking Down Voltage) of the test pieces of prototype multilayer ceramic capacitors (Prototype MLCCs) Nos. 4 to 6 completed as described above were measured and are shown in Table 1 below.

[0131] FIG. 5 shows IV curves for test numbers 4 to 6, with FIG. 5(a) being the IV curve for test number 4, FIG. 5(b) being the IV curve for test number 5, and FIG. 5(c) being the IV curve for test number 6.

[0132] [Table 1]

[0133] As can be seen from Table 1 and Figures 5(a) and 5(b) above, Test Nos. 4 and 5 are cases where the Mg content is 0.25 mol or more and 0.9 mol or less per 100 mol of the main component, and it was confirmed that the capacity, loss factor, and BDV properties were all excellent. It can also be seen that Test Nos. 4 and 5 have higher BDV values ​​than Test Nos. 1 to 3, which do not contain Mg.

[0134] However, as can be seen from Table 1 and Figure 5(c) above, in test number 6, in which excessive Mg was added, the BDV dropped sharply when the Mg content exceeded 0.9 mol per 100 mol of the main components, and the capacity was also lower than that of test number 5, in which the Mg content was 0.7 mol per 100 mol of the main components.

[0135] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments and the accompanying drawings, but is limited by the scope of the accompanying claims. Therefore, various substitutions, modifications, and changes can be made by a person skilled in the art within the scope of the technical idea of ​​the present invention described in the claims, and these also belong to the scope of the present invention. [Explanation of symbols]

[0136] 100 Multilayer electronic components 110 Main unit 121, 122 Internal electrode 111 Dielectric layer 112, 113 Cover part 114, 115 Margin 131, 132 External electrode

Claims

1. A.B.O. ３ (A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf), and a main component having a perovskite structure represented by the formula: and a first subcomponent; The first subcomponent contains, relative to 100 moles of the main component, a rare earth element: 0.9 moles or more, Nb: 0.05 moles or more, and Mg: 0.467 moles or more and 0.7 moles or less, and a sum of the contents of the rare earth element and Nb is 1.5 moles or less.

2. The dielectric composition according to claim 1 , wherein the rare earth element is Dy or a rare earth element having an ionic radius smaller than that of Dy.

3. The dielectric composition according to claim 1 or 2, wherein the dielectric composition contains 0.1 to 2.0 moles of a second minor component which is an oxide or carbonate containing at least one of Mn, V, Cr, Fe, Ni, Co, Cu, and Zn, relative to 100 moles of the main component.

4. The dielectric composition according to any one of claims 1 to 3, further comprising 0.001 to 0.5 mol of a third subcomponent which is an oxide containing at least one of Si and Al, or a glass compound containing Si, relative to 100 mol of the main component.

5. The main component is BaTiO ３ 5. The dielectric composition according to claim 1, wherein the rare earth element is Dy.

6. a body including a dielectric layer and an internal electrode; an outer electrode disposed on the body and connected to the inner electrode; the dielectric layer comprises a dielectric composition; The dielectric composition is ABO ３ (A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf), and a main component having a perovskite structure represented by the formula: and a first subcomponent; the first subcomponent contains, relative to 100 moles of the main component, 0.9 moles or more of rare earth element, 0.05 moles or more of Nb, and 0.467 moles or more and 0.7 moles or less of Mg, and the sum of the contents of the rare earth element and Nb is 1.5 moles or less.

7. 7. The multilayer electronic component according to claim 6, wherein the rare earth element is Dy or a rare earth element having an ionic radius smaller than that of Dy.

8. 8. The multilayer electronic component according to claim 6, wherein the dielectric composition contains 0.1 to 2.0 moles of a second subcomponent which is an oxide or carbonate containing at least one of Mn, V, Cr, Fe, Ni, Co, Cu, and Zn, relative to 100 moles of the main component.

9. The laminated electronic component according to any one of claims 6 to 8, wherein the dielectric composition contains 0.001 to 0.5 mol of a third subcomponent which is an oxide containing at least one of Si and Al, or a glass compound containing Si, relative to 100 mol of the main component.

10. 10. The multilayer electronic component according to claim 6, wherein the dielectric layers have an average thickness of 0.41 μm or less.

11. 11. The multilayer electronic component according to claim 6, wherein the internal electrodes have an average thickness of 0.41 μm or less.

12. The multilayer electronic component according to claim 6 , wherein the size of the multilayer electronic component is 1005 (length×width, 1.0 mm×0.5 mm) or less.

13. 13. The multilayer electronic component according to claim 6, wherein the dielectric layer includes a plurality of crystal grains and grain boundaries disposed between adjacent crystal grains, and the Nb is contained in the plurality of crystal grains and the grain boundaries.

14. 14. The multilayer electronic component according to claim 6, wherein the dielectric layer includes a plurality of crystal grains and crystal grain boundaries disposed between adjacent crystal grains, and the crystal grains have an average grain size of 200 nm or less.

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