Solid-state imaging device and electronic device

Abstract

To provide a solid-state imaging element capable of improving image quality.SOLUTION: A solid-state imaging element 1000-1 includes at least a first electrode 8-1, a second electrode 1-1, third electrodes 9-1-1 and 9-1-2, a first photoelectric conversion part 100-1, second photoelectric conversion parts 200-1-1 and 200-1-2, a first insulation layer 6-1, a second insulation layer 7-1, and optical waveguides 400-1-1 and 400-1-2. The second electrode, the first photoelectric conversion part, and the first electrode are arranged in this order. The third electrodes are separated from the first electrode and formed to face the first photoelectric conversion part through the first insulation layer. The second insulation layer is formed between the third electrodes and the second photoelectric conversion parts and the optical waveguides are formed between the third electrodes and the second photoelectric conversion parts.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present technology relates to a solid-state imaging device and an electronic device. [Background technology]

[0002] In general, solid-state imaging elements such as complementary metal oxide semiconductor (CMOS) image sensors and charge coupled devices (CCDs) are widely used in digital still cameras, digital video cameras, and the like.

[0003] In recent years, various developments have been made to reduce the size of solid-state imaging devices and improve their image quality.

[0004] For example, an image sensor has been proposed that has a structure in which charges are stored in an organic film and a structure in which a semiconductor layer is present on an insulating film (see Patent Document 1).

[0005] Also, for example, an imaging element has been proposed that has a structure in which charges are stored in an organic film and a structure in which a semiconductor layer covers an insulating film (see Patent Document 2). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] US Patent Application Publication No. 2016 / 0037098 [Patent Document 2] JP 2016-063165 A Summary of the Invention [Problem to be solved by the invention]

[0007] However, the techniques proposed in Patent Documents 1 and 2 may not be able to achieve further improvement in image quality.

[0008] Therefore, the present technology has been made in consideration of such circumstances, and a main object of the technology is to provide a solid-state imaging element capable of improving image quality, and an electronic device equipped with the solid-state imaging element. [Means for solving the problem]

[0009] As a result of intensive research by the inventors to achieve the above object, they have succeeded in dramatically improving image quality and have completed the present technology.

[0010] That is, in the present technology, first, a semiconductor device includes at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion unit, a second photoelectric conversion unit, a first insulating layer, a second insulating layer, and an optical waveguide, the second electrode, the first photoelectric conversion unit, and the first electrode are arranged in this order; the third electrode is formed to be spaced apart from the first electrode and to face the first photoelectric conversion unit with the first insulating layer interposed therebetween; the second insulating layer is formed between the third electrode and the second photoelectric conversion unit, The optical waveguide is formed between the third electrode and the second photoelectric conversion portion.

[0011] The solid-state imaging device according to the present technology may further include at least one semiconductor layer, The at least one semiconductor layer may be disposed between the first photoelectric conversion section and the first insulating layer. In the solid-state imaging device according to the present technology, the optical waveguide and the second insulating layer may be separated in a substantially vertical direction. The solid-state imaging device according to the present technology may further include a layer containing a low dielectric constant material, The layer containing a low dielectric constant material may be disposed below the optical waveguide and above the second photoelectric conversion section. The solid-state imaging device according to the present technology may further include an inner lens, The inner lens may be disposed between the first photoelectric conversion portion and the optical waveguide. In the solid-state imaging element according to the present technology, the refractive index of the optical waveguide may be greater than the refractive index of the second insulating layer.

[0012] The optical waveguide included in the solid-state imaging device according to the present technology may include SiN. The optical waveguide included in the solid-state imaging device according to the present technology may contain siloxane. The optical waveguide included in the solid-state imaging device according to the present technology may include ITO.

[0013] The solid-state imaging device according to the present technology may include at least one wiring connected to the third electrode, the at least one trace comprises a transparent material; The at least one wiring and the optical waveguide may be arranged in this order from the light incident side. The solid-state imaging device according to the present technology may include at least one wiring connected to the third electrode, the at least one trace comprises a light blocking material; The at least one wiring and the optical waveguide may be separated by the second insulating layer.

[0014] A solid-state imaging element according to the present technology includes at least one pedestal connected to the first electrode and formed between the first electrode and the second photoelectric conversion unit; The semiconductor device may further include a via connecting the first electrode and the at least one pedestal, a first distance between a center of the second photoelectric conversion unit at a center of an angle of view and a center of the via may be different from a second distance between a center of the second photoelectric conversion unit at an end of an angle of view and a center of the via, Furthermore, the solid-state imaging element according to the present technology includes at least one wiring connected to the third electrode and formed between the third electrode and the second photoelectric conversion unit; A contact hole that connects the third electrode and the at least one wiring may be further provided, A third distance between the center of the second photoelectric conversion unit at the center of the angle of view and the center of the contact hole may be different from a fourth distance between the center of the second photoelectric conversion unit at the edge of the angle of view and the center of the contact hole.

[0015] In addition, in this technology, a solid-state imaging element is mounted, the solid-state imaging element includes at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, and an optical waveguide; the second electrode, the first photoelectric conversion unit, and the first electrode are arranged in this order; the third electrode is formed to be spaced apart from the first electrode and to face the first photoelectric conversion unit with the first insulating layer interposed therebetween; the second insulating layer is formed between the third electrode and the second photoelectric conversion unit, The optical waveguide is formed between the third electrode and the second photoelectric conversion portion. Effect of the Invention

[0016] According to the present technology, it is possible to improve image quality. Note that the effects described herein are not necessarily limited to those described herein, and may be any of the effects described in the present disclosure. [Brief description of the drawings]

[0017] [Figure 1] 1 is a cross-sectional view showing a configuration example of a solid-state imaging element according to a first embodiment to which the present technology is applied. [Diagram 2] 11 is a cross-sectional view showing a configuration example of a solid-state imaging element according to a second embodiment to which the present technology is applied. [Diagram 3] 11A and 11B are a cross-sectional view and a plan view showing a configuration example of a solid-state imaging element according to a second embodiment to which the present technology is applied. [Figure 4] 11 is a plan view showing a configuration example of a solid-state imaging element according to a second embodiment to which the present technology is applied. [Diagram 5] 11 is a cross-sectional view showing a configuration example of a solid-state imaging element according to a second embodiment to which the present technology is applied. [Figure 6] 1 is a diagram showing an array development of pixels of a solid-state imaging element to which the present technology is applied. [Figure 7] 11 is a plan view showing a configuration example of a solid-state imaging element according to a second embodiment to which the present technology is applied. [Figure 8]11 is a cross-sectional view showing a configuration example of a solid-state imaging element according to a second embodiment to which the present technology is applied. [Figure 9] 11 is a plan view showing a configuration example of a solid-state imaging element according to a third embodiment to which the present technology is applied. [Figure 10] 11 is a cross-sectional view showing a configuration example of a solid-state imaging element according to a third embodiment to which the present technology is applied. [Figure 11] 13 is a plan view showing a configuration example of a solid-state imaging element according to a fourth embodiment to which the present technology is applied. FIG. [Figure 12] 11 is a cross-sectional view showing a configuration example of a solid-state imaging element according to a fourth embodiment to which the present technology is applied. [Figure 13] 13 is a plan view for explaining a solid-state imaging element according to a fifth embodiment to which the present technology is applied. FIG. [Figure 14] 13 is a cross-sectional view for explaining a solid-state imaging element according to a fifth embodiment to which the present technology is applied. [Figure 15] 13 is a plan view showing a configuration example of a solid-state imaging element according to a fifth embodiment to which the present technology is applied. [Figure 16] 13 is a cross-sectional view showing an example of the configuration of a solid-state imaging element according to a fifth embodiment to which the present technology is applied. [Figure 17] 13 is a plan view showing a configuration example of a solid-state imaging element according to a sixth embodiment to which the present technology is applied. [Figure 18] 13 is a cross-sectional view showing an example of the configuration of a solid-state imaging element according to a sixth embodiment to which the present technology is applied. [Figure 19] 13 is a cross-sectional view showing an example of the configuration of a solid-state imaging element according to a sixth embodiment to which the present technology is applied. [Figure 20] 1 is a diagram showing an example of use of solid-state imaging devices according to first to sixth embodiments to which the present technology is applied. [Figure 21] FIG. 1 is a functional block diagram of an example of an electronic device to which the present technology is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] A preferred embodiment for carrying out the present technology will be described below. The embodiment described below shows an example of a typical embodiment of the present technology, and the scope of the present technology is not to be interpreted narrowly by this.

[0019] The explanation will be given in the following order. 1. First embodiment (example 1 of solid-state imaging device) 2. Second embodiment (example 2 of solid-state imaging device) 3. Third embodiment (third example of solid-state imaging device) 4. Fourth embodiment (fourth example of solid-state imaging device) 5. Fifth embodiment (fifth example of solid-state imaging device) 6. Sixth embodiment (sixth example of solid-state imaging device) 7. Seventh embodiment (example of electronic device) 8. Example of use of back-illuminated solid-state imaging element using this technology

[0020] 1. First embodiment (example 1 of solid-state imaging device) A solid-state imaging element according to a first embodiment of the present technology is a solid-state imaging element including at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, and an optical waveguide. In the solid-state imaging element according to the first embodiment of the present technology, the second electrode, the first photoelectric conversion section, and the first electrode are arranged in this order, the third electrode is formed apart from the first electrode and facing the first photoelectric conversion section via the first insulating layer, the second insulating layer is formed between the third electrode and the second photoelectric conversion section, and the optical waveguide is formed between the third electrode and the second photoelectric conversion section.

[0021] 1 shows a solid-state imaging element 1000 (1000-1 in FIG. 1) which is an example of a solid-state imaging element according to a first embodiment of the present technology. FIG. 1 is a cross-sectional view of the solid-state imaging element 1000-1.

[0022] The solid-state imaging element 1000-1 includes a first electrode 8 (referred to as the first electrode 8-1 in FIG. 1), a second electrode 1 (referred to as the second electrode 1-1 in FIG. 1), a third electrode 9 (referred to as two third electrodes 9-1-1 and 9-1-2 in FIG. 1), a first photoelectric conversion section 100 (referred to as the first photoelectric conversion section 100-1 in FIG. 1), and a second photoelectric conversion section 200. 1, the second photoelectric conversion section 200-1-1 and 200-1-2), a first insulating layer 6 (in FIG. 1, the first insulating layer 6-1), a second insulating layer 7 (in FIG. 1, the second insulating layer 7-1), and an optical waveguide 400 (in FIG. 1, the two optical waveguides 400-1-1 and 400-1-2).

[0023] In the solid-state imaging element 1000-1, a second electrode 1-1, a first photoelectric conversion unit 100-1, and a first electrode 8-1 are arranged in this order from the light incident side (the upper side in FIG. 1).

[0024] The third electrode 9-1-1 and the third electrode 9-1-2 are formed apart from the first electrode 8-1 and opposed to the first photoelectric conversion unit 100-1 via the first insulating layer 6-1. The third electrodes 9-1-1 and the third electrodes 9-1-2 are charge storage electrodes.

[0025] Since the solid-state imaging element 1000-1 includes the third electrodes 9-1-1 and 9-1-2 as charge storage electrodes, when the first photoelectric conversion unit 100-1 is irradiated with light and photoelectric conversion is performed in the first photoelectric conversion unit 100-1, the charge of the first photoelectric conversion unit 100-1 can be stored. Therefore, at the start of exposure, the charge storage unit (first photoelectric conversion unit 100-1) can be completely depleted and the charge can be erased. As a result, it is possible to suppress the occurrence of phenomena such as increased kTC noise, deteriorated random noise, and reduced image quality. That is, when the first photoelectric conversion unit 100-1 is irradiated with light and photoelectric conversion is performed in the first photoelectric conversion unit 100-1, the first photoelectric conversion layer 100-1, the first insulating layer 6-1, and the third electrodes (electrodes for charge storage) 9-1-1 and 9-1-2 form a kind of capacitor, which can store the charge of the first photoelectric conversion unit 100-1. Therefore, as described above, at the start of exposure, it is possible to completely deplete the charge storage unit and erase the charge, which results in suppressing the occurrence of phenomena such as increased kTC noise, worsening random noise, and causing a decrease in image quality. In addition, since all pixels can be reset simultaneously, a so-called global shutter function can be realized.

[0026] The second insulating layer 7-1 is formed between the third electrodes 9-1-1 and 9-1-2 and the second photoelectric conversion sections 200-1-1 and 200-1-2.

[0027] The optical waveguides 400-1-1 and 400-1-2 are formed between the third electrodes 9-1-1 and 9-1-2 and the second photoelectric conversion sections 200-1-1 and 200-1-2.

[0028] In FIG. 1, the first electrode 8-1 is connected to the FD 89-1 through the via 81-1, the third electrode 9-1-1 is connected to the wiring 92-1 through the contact hole 92-1-A, and the third electrode 9-1-2 is connected to the wiring 91-1 through the contact hole 91-1-A. In FIG. 1, the wirings 91-1 and 92-1 are arranged in parallel in the vertical direction, with the wiring 92-1 arranged in the upward direction and the wiring 91-1 arranged in the downward direction. In this disclosure, the downward wiring may be referred to as the first wiring, and the upward wiring as the second wiring. In FIG. 1, the solid-state imaging element 1000-1 includes two wirings 91-1 and 92-1, but may include one wiring, or may include three or more wirings. In addition, the wirings 92-1 and 91-1 may include a transparent material or a light-shielding material.

[0029] The first photoelectric conversion unit 100-1 is formed on one surface side (light incident side, upper side in FIG. 1) of the semiconductor substrate 300-1, and the second photoelectric conversion units 200-1-1 and 200-1-2 are formed by being embedded in the semiconductor substrate 300-1. That is, in the solid-state imaging element 1000-1, the first photoelectric conversion unit 100-1 and the second photoelectric conversion units 200-1-1 and 200-1-2 are arranged in this order from the light incident side. Therefore, in the solid-state imaging element 1000-1, the first photoelectric conversion unit 100-1 absorbs a first light component (e.g., green light (light between 495 nm and 570 nm)), and the other light components (blue light (light between 425 nm and 495 nm) and red light (light between 620 nm and 750 nm)) are absorbed by the second photoelectric conversion units 200-1-1 and 200-1-2 in the semiconductor substrate 300-1 (Si substrate). Each of the second photoelectric conversion units 200-1-1 and 200-1-2 may have a two-layer structure. In that case, the first second photoelectric conversion unit 200-1-1 and the first second photoelectric conversion unit 200-1-2 may absorb blue light (light of 425 nm to 495 nm), and the second second photoelectric conversion unit 200-1-1 and the second second photoelectric conversion unit 200-1-2 may absorb red light (light of 620 nm to 750 nm). The first photoelectric conversion unit 100-1 may be made of an organic material, and the second photoelectric conversion units 200-1-1 and 200-1-2 may be made of an organic material or may be made of an inorganic material.

[0030] The signal charges generated in pixel 2 (2-1 to 2-4) by the first photoelectric conversion unit 100-1 and the second photoelectric conversion units 200-1-1 and 200-1-2 are read out by a readout unit consisting of multiple pixel transistors, processed by a signal processing unit, and output as image data.

[0031] In the solid-state imaging device 1000-1, the optical waveguides 400-1-1 and 400-1-2 and the second insulating layer 7-1 are separated in the vertical direction (the up-down direction in FIG. 1). The second insulating layer 7-1 may be made of a dielectric material having insulating properties, such as a silicon oxide film or TEOS. The first insulating layer 6-1 may be made of a dielectric material having insulating properties, such as a silicon oxide film or TEOS, similar to the second insulating layer 7-1.

[0032] The optical waveguides 400-1-1 and 400-1-2 can reflect light incident at various angles to the imaging surface at the interfaces between the optical waveguides 400-1-1 and 400-1-2 and the second insulating layer 7-1 by utilizing the difference in refractive index between the optical waveguides 400-1-1 and 400-1-2 and the second insulating layer 7-1. Therefore, the optical waveguides 400-1-1 and 400-1-2 can prevent light from entering adjacent pixels.

[0033] By forming the optical waveguides 400-1-1 and 400-1-2 in the solid-state imaging element 1000-1 of the first embodiment of the present technology, as described above, the intrusion of light into adjacent pixels is prevented by reflection at the interface between the optical waveguide 400-1-1 or the optical waveguide 400-1-2 and the second insulating layer 7-1, thereby achieving the effect of improving image quality, in particular the effect of improving sensitivity, shading, and color mixing.

[0034] In a conventional solid-state imaging device using an organic photoelectric conversion film as a first photoelectric conversion section, when the distance between the semiconductor substrate and the organic photoelectric conversion film is increased, for example, when the incident light to the pixel is obliquely incident, color mixing and shading are likely to occur. For this reason, in the conventional solid-state imaging device, it is preferable to reduce the distance between the semiconductor substrate and the organic photoelectric conversion film from the viewpoint of reducing color mixing and shading. On the other hand, in a conventional solid-state imaging device using an organic photoelectric conversion film as a first photoelectric conversion section, when the distance between the semiconductor substrate and the organic photoelectric conversion film is reduced, the parasitic capacitance attached to the lower electrode as the first electrode that reads out the signal charge from the organic photoelectric conversion film increases. When this parasitic capacitance increases, the signal obtained when the signal charge is read out from the organic photoelectric conversion film becomes smaller. For this reason, in the conventional solid-state imaging device, the signal-to-noise ratio (S / N ratio) of the signal read out from the organic photoelectric conversion film may decrease.

[0035] On the other hand, dedicated wiring is required to drive the third electrode (electrode for storing electric charge), which increases the thickness of the film between the third electrode and the Si interface, which can cause degradation of optical properties such as color mixing and shading.

[0036] In contrast, in the solid-state imaging element 1000-1 of the first embodiment, optical waveguides 400-1-1 and 400-1-2 are formed between the semiconductor substrate 300-1 and the first photoelectric conversion section 100-1 (e.g., an organic photoelectric conversion film, an organic photoelectric conversion layer), more specifically, between the third electrodes 9-1-1 and 9-1-2 and the second photoelectric conversion sections 200-1-1 and 200-1-2. This provides the effect of improving sensitivity, shading, and color mixing, and therefore there is no need to thin the area between the semiconductor substrate 300-1 and the first photoelectric conversion unit 100-1. In other words, in the solid-state imaging device 1000-1 of the first embodiment, the area between the interfaces of the third electrodes 9-1-1 and 9-1-2 and the semiconductor substrate 300-1 can be thickened using the wirings 91-1 and 92-1 for driving the third electrodes 9-1-1 and 9-1-2. By thickening the area between the semiconductor substrate 300-1 and the first photoelectric conversion unit 100-1, it is possible to reduce the capacitance between the semiconductor substrate 300-1 and the first electrode 8-1 for the first photoelectric conversion unit 100-1, and it is possible to prevent a decrease in conversion efficiency and a deterioration in random noise (RN).

[0037] Furthermore, by introducing optical waveguides 400-1-1 and 400-1-2 into the solid-state imaging element 1000-1 of the first embodiment of the present technology, the solid-state imaging element 1000-1 of the first embodiment of the present technology can achieve both the effect of improving sensitivity, shading, and color mixing, and the effect of preventing a decrease in conversion efficiency and deterioration of random noise (RN).

[0038] The refractive index of the optical waveguides 400-1-1 and 400-1-2 is preferably greater than the refractive index of the second insulating layer 7-1. This preferred embodiment makes it possible to more effectively prevent light from entering adjacent pixels due to reflection at the interfaces between the optical waveguides 400-1-1 and 400-1-2 and the second insulating layer 7-1.

[0039] The optical waveguides 400-1-1 and 400-1-2 preferably contain SiN. Since the optical waveguides 400-1-1 and 400-1-2 containing SiN have a refractive index of 1.8 to 2.1, it is preferable that the second insulating layer 7-1 contains SiO and has a refractive index of 1.3 to 1.5, for example. This preferable embodiment can more effectively prevent light from entering adjacent pixels due to reflection at the interface between the optical waveguides 400-1-1 and 400-1-2 and the second insulating layer 7-1.

[0040] The optical waveguides 400-1-1 and 400-1-2 are not particularly limited and may be formed of any material, but may be formed of a low-dielectric constant material. When a low-dielectric constant material is used as the material of the optical waveguides 400-1-1 and 400-1-2, the capacitance can be further reduced. This further capacitance reduction can be used to reduce the height, so that the effects of improving sensitivity, color mixing, and shading are further achieved. The refractive index of the low-dielectric constant material is higher than the refractive index of the second insulating layer 7-1 and is preferably 1.6 to 1.8. The dielectric constant of the low-dielectric constant material is not particularly limited, but is preferably 3, 4 to 3.6.

[0041] The low dielectric constant material is not particularly limited, but examples thereof include transparent materials such as a SiOC film and a SiOCH film.

[0042] The optical waveguides 400-1-1 and 400-1-2 are preferably made of a transparent material such as ITO (indium tin oxide). When the optical waveguides 400-1-1 and 400-1-2 are made of a transparent material such as ITO (indium tin oxide), the refractive index of the optical waveguides 400-1-1 and 400-1-2 is approximately 1.75.

[0043] The thickness from the semiconductor substrate 300-1 to the first photoelectric conversion section 100-1 is not particularly limited and may be any thickness, but is preferably 1.5 μm or less.

[0044] The optical waveguides 400-1-1 and 400-1-2 may include an organic film. The refractive index of the organic film is not particularly limited, but is preferably 1.5 to 1.7. The dielectric constant of the organic film is not particularly limited, but is preferably 3.4 to 3.6.

[0045] The optical waveguides 400-1-1 and 400-1-2 can be manufactured by a known method. For example, after the second insulating layer 7-1 is formed flat, the portions that will become the optical waveguides 400-1-1 and 400-1-2 are dug into holes (or cylindrical or truncated cones). A material with a higher refractive index than the second insulating layer 7-1 is embedded in the dug holes. The hole-shaped (or cylindrical or truncated cone) portions into which the material with a higher refractive index is embedded become the optical waveguides 400-1-1 and 400-1-2.

[0046] The first electrode 8 (in FIG. 1, it is the first electrode 8-1) and the third electrode 9 (in FIG. 1, it is the two third electrodes 9-1-1 and 9-1-2) are preferably transparent electrodes made of a transparent conductive material. The first electrode 8 and the third electrode 9 may be made of the same material or different materials. The first electrode 8 and the third electrode 9 can be formed by a sputtering method or a chemical vapor deposition method (CVD).

[0047] Examples of transparent conductive materials include indium oxide, indium tin oxide (ITO, Indium Tin Oxide, including Sn-doped In2O3, crystalline ITO, and amorphous ITO), and indium zinc oxide (IZO, Indium Zinc Oxide) in which indium is added as a dopant to zinc oxide. Examples of the oxide include indium-gallium oxide (IGO) in which indium is added as a dopant to gallium oxide, indium-gallium-zinc oxide (IGZO, In-GaZnO4) in which indium and gallium are added as dopants to zinc oxide, indium-tin-zinc oxide (ITZO) in which indium and tin are added as dopants to zinc oxide, IFO (F-doped In2O3), tin oxide (SnO2), ATO (Sb-doped SnO2), FTO (F-doped SnO2), zinc oxide (including ZnO doped with other elements), aluminum-zinc oxide (AZO) in which aluminum is added as a dopant to zinc oxide, gallium-zinc oxide (GZO) in which gallium is added as a dopant to zinc oxide, titanium oxide (TiO2), niobium-titanium oxide (TNO) in which niobium is added as a dopant to titanium oxide, antimony oxide, spinel-type oxide, and oxides having a YbFe2O4 structure.

[0048] The second electrode 1 (second electrode 1-1 in FIG. 1) is formed of a transparent conductive film such as an indium tin oxide film or an indium zinc oxide film.

[0049] 2. Second embodiment (Second example of solid-state imaging device) The solid-state imaging element according to the second embodiment of the present technology is a solid-state imaging element including at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, an optical waveguide, and at least one semiconductor layer. In the solid-state imaging element according to the second embodiment of the present technology, the second electrode, the first photoelectric conversion section, and the first electrode are arranged in this order, the third electrode is formed apart from the first electrode and facing the first photoelectric conversion section via the first insulating layer, the second insulating layer is formed between the third electrode and the second photoelectric conversion section, and the optical waveguide is formed between the third electrode and the second photoelectric conversion section. Furthermore, in the solid-state imaging element according to the second embodiment of the present technology, at least one semiconductor layer is arranged between the first photoelectric conversion section and the first insulating layer.

[0050] That is, the solid-state imaging element of the second embodiment of the present technology is a solid-state imaging element in which at least one semiconductor layer is provided in the solid-state imaging element of the first embodiment of the present technology, and the at least one semiconductor layer is disposed between the first photoelectric conversion section and the first insulating layer.

[0051] 2 to 8 show solid-state imaging elements 1000-2 to 1000-7 as examples of the solid-state imaging element according to the second embodiment of the present technology. Note that this is the solid-state imaging element 1000-2 in Fig. 2, the solid-state imaging element 1000-3 in Fig. 3, the solid-state imaging element 1000-4 in Fig. 4 and Fig. 5, the solid-state imaging element 1000-6 in Fig. 6, and the solid-state imaging element 1000-7 in Fig. 7 and Fig. 8.

[0052] First, a solid-state imaging element according to a second embodiment of the present technology will be described with reference to Fig. 2. Fig. 2 is a cross-sectional view of a solid-state imaging element 1000-2. The solid-state imaging element 1000-2 includes at least a first electrode 8-2, a second electrode 1-2, two third electrodes 9-2-1 and 9-2-2, a first photoelectric conversion unit 100-2, a semiconductor layer 5 (semiconductor layer 5-2 in Fig. 2), four second photoelectric conversion units 200-2-1A, 200-2-1B, 200-2-2A, and 200-2-2B, a first insulating layer 6-2, a second insulating layer 7-2, and an optical waveguide (not shown in Fig. 2).

[0053] The solid-state imaging element according to the second embodiment of the present technology includes the semiconductor layer 5 (5-2 in FIG. 2), so that charges can be stored in the semiconductor layer 5 and recombination during charge storage can be prevented. Specific examples of materials constituting the semiconductor layer include oxide semiconductor materials such as IGZO, transition metal dichalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, and organic semiconductor materials such as condensed polycyclic hydrocarbon compounds and condensed heterocyclic compounds.

[0054] In the solid-state imaging element 1000-2, from the light incident side (the upper side in FIG. 2), on-chip lenses 12-2-1 and 12-2-2, a protective layer 11-2, a second electrode 1-2, a first photoelectric conversion section 100-2, a semiconductor layer 5-2, and a first electrode 8-2 are arranged in this order.

[0055] The third electrode 9-2-1 and the third electrode 9-2-2 are formed apart from the first electrode 8-2 and are formed facing the first photoelectric conversion unit 100-2 via the first insulating layer 6-2. The third electrode 9-2-1 and the third electrode 9-2-2 are charge storage electrodes, similar to the third electrode 9-1-1 and the third electrode 9-1-2 in Fig. 1. The first electrode 8-2, the third electrodes 9-2-1 and 9-2-2, and the shields 10-2-1 and 10-2-2 are formed in the same layer.

[0056] In FIG. 2, the first electrode 8-2 is connected to the second seat 82-2 through a via 82-2-A, the second seat 82-2 is connected to the first seat 81-2 through a via 81-2-A, and the first seat 81-2 is connected to the wiring layer and the FD 89-2 through a through electrode 89-2. The third electrode 9-2-1 is connected to the second wiring 92-2 through a contact hole 92-2-A, the second wiring 92-2 is connected to the first wiring 91-2 through a contact hole 91-2-A, and the wiring 91-2 is connected to the wiring layer through a through electrode 99-2. The third electrode 9-2-2 is connected to the second wiring 94-2 through a contact hole 94-2-A. In FIG. 2, the second wiring 94-2 and the first wiring 93-2 are not connected.

[0057] The shield 10-2-1 is connected to the second wiring 1020-2 through the contact hole 102-2-A, the second wiring 1020-2 is connected to the first wiring 1010-2 through the contact hole 101-2-A, and the first wiring 1010-2 is connected to the wiring layer through the through electrode 109-2. In FIG. 2, the shield 10-2-2 is not connected to any member, but may be connected to the shield 10-2-1. The second electrode 1-2 is connected to the base 112-2 through the wiring 113-2, the base 112-2 is connected to the base 111-2 through the via 112-A, and the base 111-2 is connected to the wiring layer through the through electrode 119-2.

[0058] The second insulating layer 7-2 is formed between the third electrodes 9-2-1 and 9-2-2 and the second photoelectric conversion sections 200-2-1A and 200-2-2A.

[0059] Although the optical waveguide is not shown in FIG. 2, the optical waveguide may be formed between the third electrodes 9-2-1 and 9-2-2 and the second photoelectric conversion sections 200-2-1A and 200-2-2A.

[0060] The first photoelectric conversion section 100-2 is composed of a second carrier blocking layer 2-2, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-2, and a first carrier blocking layer 4-2.

[0061] The first photoelectric conversion section 100-2 is formed on one surface side (light incident side, upper side in FIG. 2) of the semiconductor substrate 300-2, and the second photoelectric conversion sections 200-2-1A, 200-2-1B, 200-2-2A, and 200-2-2B are formed by being embedded in the semiconductor substrate 300-3. The second photoelectric conversion sections 200-2-1A and 200-2-1B are stacked in the thickness direction of the semiconductor substrate 300-2, and the second photoelectric conversion sections 200-2-2A and 200-2-2B are stacked in the thickness direction of the semiconductor substrate 300-2. That is, the solid-state imaging device 1000-2 has the first photoelectric conversion unit 100-2, the second photoelectric conversion units 200-2-1A and 200-2-2A, and the second photoelectric conversion units 200-2-1B and 200-2-2B arranged in this order from the light incident side. Therefore, the solid-state imaging device 1000-2 may absorb, for example, green light (light of 495 nm to 570 nm) in the first photoelectric conversion unit 100-2, absorb, for example, blue light (light of 425 nm to 495 nm) in the second photoelectric conversion units 200-2-1A and 200-2-1B, and absorb, for example, red light (light of 620 nm to 750 nm) in the second photoelectric conversion units 200-2-1B and 200-2-2B. The second photoelectric conversion units 200-2-1A, 200-2-1B, 200-2-2A, and 200-2-2B are, for example, photodiodes, and the positions of the four photodiodes in the depth direction can be set according to the target color. Also, the second photoelectric conversion units 200-2-1A and 200-2-2A are connected to the gate units 210-1 and 210-2 and the wiring layer, respectively.

[0062] A solid-state imaging element according to a second embodiment of the present technology will be described with reference to Fig. 3. Fig. 3(a) is a cross-sectional view of a solid-state imaging element 1000-3 cut along line A-A' shown in Fig. 3(b), and Fig. 3(b) is a diagram showing a planar layout of four pixels (1000-3-1 to 1000-3-4) of the solid-state imaging element 1000-3 as viewed from the light incident side.

[0063] Referring to Fig. 3(a), the solid-state imaging element 1000-3 includes at least a first electrode 8-3, a second electrode 1-3, a third electrode 9-3, a first photoelectric conversion section 100-3, a semiconductor layer 5-3, a second photoelectric conversion section 203, a first insulating layer 6-3, a second insulating layer 7-3, and an optical waveguide (not shown in Fig. 3). Transparent electrodes may be used for the first electrode 8-3 and the third electrode 9-3.

[0064] In the solid-state imaging element 1000-3, a protective layer 11-3, a second electrode 1-3, a first photoelectric conversion section 100-3, a semiconductor layer 5-3, and a first electrode 8-3 are arranged in this order from the light incident side (the upper side in FIG. 3).

[0065] The third electrode 9-3 is formed apart from the first electrode 8-3 and faces the first photoelectric conversion unit 100-3 via the first insulating layer 6-3. The third electrode 9-3 is a charge storage electrode similar to the third electrode 9-1-1 and the third electrode 9-1-2 in Fig. 1. The first electrode 8-3, the third electrode 9-3 and the shield 10-3 are formed in the same layer.

[0066] 3, the first electrode 8-3 is connected to the second seat 82-3 through a via 82-3-A, the second seat 82-3 is connected to the first seat 81-3 through a via 81-3-A, and the first seat 81-3 is further connected to a through electrode 89-3. The third electrode 9-3 is connected to the second wiring 92-3 through a contact hole 92-3-A, and the second wiring 92-3 is connected to the wiring 91-3 through a contact hole 91-3-A.

[0067] The second insulating layer 7-3 is formed between the third electrode 9-3 and the second photoelectric conversion section 200-3.

[0068] Although the optical waveguide is not shown in FIG. 3, the optical waveguide is formed between the third electrode 9-3 and the second photoelectric conversion section 200-3.

[0069] The first photoelectric conversion section 100-3 is composed of a second carrier blocking layer 2-3, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-3, and a first carrier blocking layer 4-3.

[0070] The first photoelectric conversion unit 100-3 is formed on one surface side (light incident side, upper side in FIG. 3) of the semiconductor substrate 300-3, and the second photoelectric conversion unit 200-3 is formed by being embedded in the semiconductor substrate 300-3. That is, the solid-state imaging element 1000-3 has the first photoelectric conversion unit 100-3 and the second photoelectric conversion unit 200-3 arranged in this order from the light incident side. Therefore, the solid-state imaging element 1000-3 absorbs the first light component (for example, green light (light of 495 nm to 570 nm)) in the first photoelectric conversion unit 100-3, and absorbs the other light components (blue light (light of 425 nm to 495 nm) and red light (light of 620 nm to 750 nm)) in the second photoelectric conversion unit 200-3 in the semiconductor substrate 300-3 (Si substrate). The second photoelectric conversion unit 200-3 may have a two-layer structure. In this case, the first second photoelectric conversion unit 200-3 may absorb blue light (light of 425 nm to 495 nm), and the second second photoelectric conversion unit 200-3 may absorb red light (light of 620 nm to 750 nm).

[0071] Please refer to Fig. 3(b). Fig. 3(b) shows four pixels 1000-3-1 to 1000-3-4 of the solid-state imaging device 1000-3.

[0072] In the pixel 1000-3-1, a third electrode 9-3-1 and a second wiring 92-3-1 are formed, and the third electrode 9-3-1 and the second wiring 92-3-1 are connected via a contact hole 92-3-1-A. In the pixel 1000-3-2, a third electrode 9-3-2, a first wiring 91-3-2 and a second wiring 92-3-2 are formed, and the first wiring 91-3-2 and the second wiring 92-3-1 are connected via a contact hole 91-3-2-A, and the third electrode 9-3-2 and the second wiring 92-3-2 are connected via a contact hole 92-3-2-A. In the pixel 1000-3-3, a third electrode 9-3-3, a first wiring 91-3-3, and a second wiring 92-3-3 are formed, and the first wiring 91-3-3 and the second wiring 92-3-3 are connected via a contact hole 91-3-3-A, and the third electrode 9-3-3 and the second wiring 92-3-3 are connected via a contact hole 92-3-3-A. In the pixel 1000-3-4, a third electrode 9-3-4 and a second wiring 92-3-4 are formed, and the third electrode 9-3-4 and the second wiring 92-3-4 are connected via a contact hole 92-3-4-A.

[0073] A second wiring 92-3-12 (first wiring 91-3-12) is formed in order from the light incident side above the pixels 1000-3-1 and 1000-3-2 (upper side in FIG. 3(b)). In the pixel 1000-3-1, the second wiring 92-3-12 and the second wiring 92-3-1 are connected, and in the pixel 1000-3-2, the first wiring 91-3-12 and the first wiring 91-3-2 are connected.

[0074] A second wiring 92-3-34 (first wiring 91-3-34) is formed in order from the light incident side below the pixels 1000-3-3 and 1000-3-4 (lower side in FIG. 3(b)). In the pixel 1000-3-3, the first wiring 91-3-34 and the first wiring 91-3-3 are connected, and in the pixel 1000-3-4, the second wiring 92-3-34 and the second wiring 92-3-4 are connected.

[0075] As a result, the pixel 1000-3-2 can be driven by the first wiring 91-3-12 and the first wiring 91-3-2, and the pixel 1000-3-3 can be driven by the first wiring 91-3-34 and the first wiring 91-3-3. The pixel 1000-3-1 can be driven by the second wiring 92-3-12 and the second wiring 92-3-1, and the pixel 1000-3-4 can be driven by the second wiring 92-3-34 and the second wiring 91-3-4. That is, the four pixels (pixels 1000-3-1 to 1000-3-4) can be driven independently.

[0076] The first electrode 8-3 is formed to be shared by four pixels (1000-3-1 to 1000-3-4), and in order from the light incident side, the first electrode is connected to the second seat 82-3 via a via 82-3-A, and the second seat 82-3 is connected to the first seat 81-3 via a via 81-3-A.

[0077] A solid-state imaging element 1000-4 according to a second embodiment of the present technology will be described with reference to FIG. 4. FIG. 4(a) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-4 for the first seat 81-5a, via 81-5a-A, first wiring 91-5b-1, contact hole 91-5b-A-1, etc., which are in the same layer, as shown in FIG. 5. FIG. 4(b) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-4 for the second seat 82-5a, via 82-5a-A, second wiring 92-5b-1, contact hole 92-5b-A-1, etc., which are in the same layer, as shown in FIG. 5. FIG. 4(c) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-4 for the first electrode 8-5a, shield 10-5a-1, third electrode 9-5b-1, etc., which are in the same layer, as shown in FIG. 5.

[0078] Please refer to Fig. 4(a). Fig. 4(a) shows four pixels 1000-4a-1 to 1000-4a-4 of a solid-state imaging device 1000-4.

[0079] A first wiring 91-4a-12 is formed on the upper portion of the pixel 1000-4a-1 and the pixel 1000-4a-2 (upper side in FIG. 4(a)). In the pixel 1000-4a-2, the first wiring 91-4a-12 and the first wiring 91-4a-2 are connected. A contact hole 91-4a-A-2 is connected to the first wiring 91-4a-2.

[0080] A first wiring 91-4a-34 is formed under the pixels 1000-4a-3 and 1000-4a-4 (lower side in FIG. 4(a)). In the pixel 1000-4a-3, the first wiring 91-4a-34 and the first wiring 91-4a-3 are connected. A contact hole 91-4a-A-3 is connected to the first wiring 91-4a-3.

[0081] As a result, the pixel 1000-4a-2 can be driven by the first wiring 91-4a-12 and the first wiring 91-4a-2, and the pixel 1000-4a-3 can be driven by the first wiring 91-4a-34 and the first wiring 91-4a-3. That is, the two pixels (pixel 1000-4a-2 and pixel 1000-4a-3) can be driven separately and independently.

[0082] The first seat 81-4a and the via 81-4a-A connected to the first seat 81-4a are formed to be shared by four pixels (1000-4a-1 to 1000-4a-4).

[0083] Please refer to Fig. 4(b). Fig. 4(b) shows four pixels 1000-4b-1 to 1000-4b-4 of the solid-state imaging device 1000-4.

[0084] A second wiring 92-4b-12 is formed on the upper portion (upper side in FIG. 4(b)) of the pixel 1000-4b-1 and the pixel 1000-4b-2. In the pixel 1000-4b-1, the second wiring 92-4b-12 and the second wiring 92-4b-1 are connected. A contact hole 92-4b-A-1 is connected to the second wiring 92-4b-1. In the pixel 1000-4b-2, the second wiring 92-4b-2 is connected to the first wiring (not shown) via a contact hole 92-4b-A-2.

[0085] A second wiring 92-4b-34 is formed under the pixels 1000-4b-3 and 1000-4b-4 (lower side in FIG. 4(b)). In the pixel 1000-4b-4, the second wiring 92-4b-34 and the second wiring 92-4b-4 are connected. A contact hole 92-4b-A-4 is connected to the second wiring 92-4b-4. In the pixel 1000-4b-3, the second wiring 92-4b-3 is connected to the first wiring (not shown) via a contact hole 92-4b-A-3.

[0086] As a result, the pixel 1000-4b-1 can be driven by the second wiring 92-4b-12 and the second wiring 92-4b-1, and the pixel 1000-4b-4 can be driven by the second wiring 92-4b-34 and the second wiring 92-4b-4. That is, the two pixels (pixel 1000-4b-1 and pixel 1000-4b-4) can be driven separately and independently.

[0087] The second seat 82-4b and the via 82-4b-A connected to the second seat 82-4b are formed to be shared by four pixels (1000-4b-1 to 1000-4b-4).

[0088] Please refer to Fig. 4(c). Fig. 4(c) shows four pixels 1000-4c-1 to 1000-4c-4 of the solid-state imaging device 1000-4.

[0089] In the pixel 1000-4c-1, a third electrode 9-4c-1 and a second wiring 92-4c-1 are formed, and the third electrode 9-4c-1 and the second wiring 92-4c-1 are connected via a contact hole 92-4c-1-A-1. In the pixel 1000-4c-2, a third electrode 9-4c-2, a first wiring 91-4c-2 and a second wiring 92-4c-2 are formed, and the first wiring 91-4c-2 and the second wiring 92-4c-1 are connected via a contact hole 91-4c-A-2, and the third electrode 9-4c-2 and the second wiring 92-4c-2 are connected via a contact hole 92-4c-A-2. In the pixel 1000-4c-3, a third electrode 9-4c-3, a first wiring 91-4c-3, and a second wiring 92-4c-3 are formed, and the first wiring 91-4c-3 and the second wiring 92-4c-3 are connected through a contact hole 91-4c-3-A, and the third electrode 9-4c-3 and the second wiring 92-4c-3 are connected through a contact hole 92-4c-A-3. In the pixel 1000-4c-4, a third electrode 9-4c-4 and a second wiring 92-4c-4 are formed, and the third electrode 9-4c-4 and the second wiring 92-4c-4 are connected through a contact hole 92-4c-A-4.

[0090] A second wiring 92-4c-12 (first wiring 91-4c-12) is formed in order from the light incident side above the pixels 1000-4c-1 and 1000-4c-2 (upper side in FIG. 4(c)). In the pixel 1000-4c-1, the second wiring 92-4c-12 and the second wiring 92-4c-1 are connected, and in the pixel 1000-4c-2, the first wiring 91-4c-12 and the first wiring 91-4c-2 are connected.

[0091] A second wiring 92-4c-34 (first wiring 91-4c-34) is formed in order from the light incident side under the pixels 1000-4c-3 and 1000-4c-4 (lower side in FIG. 4(c)). In the pixel 1000-4c-3, the first wiring 91-4c-34 and the first wiring 91-4c-3 are connected, and in the pixel 1000-4c-4, the second wiring 92-4c-34 and the second wiring 92-4c-4 are connected.

[0092] As a result, the pixel 1000-4c-2 can be driven by the first wiring 91-4c-12 and the first wiring 91-4c-2, and the pixel 1000-4c-3 can be driven by the first wiring 91-4c-34 and the first wiring 91-4c-3. The pixel 1000-4c-1 can be driven by the second wiring 92-4c-12 and the second wiring 92-4c-1, and the pixel 1000-3-4 can be driven by the second wiring 92-4c-34 and the second wiring 92-4c-4. That is, the four pixels (pixels 1000-4c-1 to 1000-4c-4) can be driven independently.

[0093] The first electrode 8-4c is formed to share four pixels (1000-4c-1 to 1000-4c-4), and in order from the light incident side, the first electrode is connected to the second seat 82-4c via a via 82-4c-A, and the second seat 82-4c is connected to the first seat 81-4c via a via 81-4c-A.

[0094] A solid-state imaging element 1000-4 according to a second embodiment of the present technology will be described with reference to Fig. 5. Fig. 5(a) is a cross-sectional view of the solid-state imaging element 1000-4 taken along line A-A' shown in Fig. 4(c), Fig. 5(b) is a cross-sectional view of the solid-state imaging element 1000-4 taken along line B-B' shown in Fig. 4(c), and Fig. 5(c) is a cross-sectional view of the solid-state imaging element 1000-4 taken along line C-C' shown in Fig. 4(c).

[0095] Referring to Fig. 5(a), the solid-state imaging element 1000-4 includes at least a first electrode 8-5a, a second electrode 1-5a, a first photoelectric conversion unit 100-5a, a semiconductor layer 5-5a, a first insulating layer 6-5a, and a second insulating layer 7-5a. A transparent electrode may be used for the first electrode 8-5a.

[0096] In the solid-state imaging device 1000-4, a protective layer 11-5a, a second electrode 1-5a, a first photoelectric conversion unit 100-5a, a semiconductor layer 5-5a, and a first electrode 8-5a are arranged in this order from the light incident side (the upper side in FIG. 5(a)). The first electrode 8-5a and the two shields 10-5a-1 and 10-5a-2 are formed in the same layer.

[0097] In FIG. 5(a), the first electrode 8-5a is connected to the second seat 82-5a via a via 82-5a-A, the second seat 82-5a is connected to the first seat 81-5a via a via 81-5a-A, and the first seat 81-5a is further connected to a through electrode 89-5a.

[0098] The first photoelectric conversion section 100-5a is composed of a second carrier blocking layer 2-5a, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-5a, and a first carrier blocking layer 4-5a.

[0099] The first photoelectric conversion portion 100-5a is formed on one surface side (light incident side, the upper side in FIG. 5(a)) of a semiconductor substrate 300-5a.

[0100] Please refer to Fig. 5(b). In Fig. 5(b), the solid-state imaging element 1000-4 includes at least shields 10-5b-1 to 10-5b-3, a second electrode 1-5b, third electrodes 9-5b-1 and 9-5b-2, a first photoelectric conversion section 100-5b, a semiconductor layer 5-5b, a first insulating layer 6-5b, a second insulating layer 7-5b, and an optical waveguide (not shown in Fig. 5(b)). Transparent electrodes may be used for the third electrodes 9-5b-1 and 9-5b-2.

[0101] In the solid-state imaging element 1000-4, a protective layer 11-5b, a second electrode 1-5b, a first photoelectric conversion section 100-5b, a semiconductor layer 5-5b, and shields 10-5b-1 to 10-5b-3 are arranged in this order from the light incident side (the upper side in FIG. 5(b)).

[0102] The third electrodes 9-5b-1 and 9-5b-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-5b via the first insulating layer 6-5b. The third electrodes 9-5b-1 and 9-5b-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-5b-1 and 9-5b-2 and the shields 10-5b-1, 10-5b-2 and 10-5b-3 are formed in the same layer.

[0103] In FIG. 5(b), the third electrode 9-5b-1 is connected to the second wiring 92-5b-1 through a contact hole 92-5b-A-1, and the second wiring 92-5b-1 is connected to the first wiring 91-5b-1 through a contact hole 91-5b-A-1. The third electrode 9-5b-2 is connected to the second wiring 92-5b-2 through a contact hole 92-5b-A-2. The first wiring 91-5b-2 and the second wiring 92-5b-3 correspond to the first wiring 91-6b and the second wiring 92-6b shown in FIG. 6(b), respectively, and are wirings formed between two pixels adjacent in the column direction (P direction in FIG. 6(b)). The second wiring 92-5b-1, the second wiring 92-5b-2, and the second wiring 92-5b-3 are formed in the same layer, and the first wiring 91-5b-1 and the first wiring 91-5b-2 are formed in the same layer.

[0104] The second insulating layer 7-5b is formed between the third electrodes 9-5b-1 and 9-5b-2 and the semiconductor substrate 300-5b.

[0105] Although the optical waveguide is not shown in FIG. 5(b), the optical waveguide may be formed between the third electrodes 9-5b-1 and 9-5b-2 and the semiconductor substrate 300-5b.

[0106] The first photoelectric conversion section 100-5b is composed of a second carrier blocking layer 2-5b, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-5b, and a first carrier blocking layer 4-5b.

[0107] The first photoelectric conversion portion 100-5b is formed on one surface side (light incident side, the upper side in FIG. 5(b)) of the semiconductor substrate 300-5b.

[0108] Please refer to Fig. 5(c). In Fig. 5(c), the solid-state imaging element 1000-4 includes at least shields 10-5c-1 to 10-5c-3, a second electrode 1-5c, third electrodes 9-5c-1 and 9-5c-2, a first photoelectric conversion section 100-5c, a semiconductor layer 5-5c, a first insulating layer 6-5c, a second insulating layer 7-5c, and an optical waveguide (not shown in Fig. 5(c)). Transparent electrodes may be used for the third electrodes 9-5c-1 and 9-5c-2.

[0109] In the solid-state imaging element 1000-4, a protective layer 11-5c, a second electrode 1-5c, a first photoelectric conversion section 100-5c, a semiconductor layer 5-5c, and shields 10-5c-1 to 10-5c-3 are arranged in this order from the light incident side (the upper side in FIG. 5(c)).

[0110] The third electrodes 9-5c-1 and 9-5c-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-5c via the first insulating layer 6-5c. The third electrodes 9-5c-1 and 9-5c-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-5c-1 and 9-5c-2 and the shields 10-5c-1, 10-5c-2 and 10-5c-3 are formed in the same layer.

[0111] In Fig. 5(c), the third electrode 9-5c-1 is connected to the second wiring 92-5c-1 through a contact hole 92-5c-A-1, and the second wiring 92-5c-1 is connected to the first wiring 91-5c-1 through a contact hole 91-5c-A-1. The third electrode 9-5c-2 is connected to the second wiring 92-5c-2 through a contact hole 92-5c-A-2. The second wiring 92-5c-1 and the second wiring 92-5c-2 are formed in the same layer.

[0112] The second insulating layer 7-5c is formed between the third electrodes 9-5c-1 and 9-5c-2 and the semiconductor substrate 300-5c.

[0113] Although the optical waveguide is not shown in FIG. 5(c), the optical waveguide may be formed between the third electrodes 9-5c-1 and 9-5c-2 and the semiconductor substrate 300-5c.

[0114] The first photoelectric conversion section 100-5c is composed of a second carrier blocking layer 2-5c, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-5c, and a first carrier blocking layer 4-5c.

[0115] The first photoelectric conversion portion 100-5c is formed on one surface side (light incident side, the upper side in FIG. 5(c)) of a semiconductor substrate 300-5c.

[0116] A solid-state imaging element 1000-6 according to a second embodiment of the present technology will be described with reference to Fig. 6. Fig. 6(a) is a diagram showing a planar layout of four pixels (1000-6a-1 to 1000-6a-4) of a solid-state imaging element 1000-6a as viewed from the light incident side. Fig. 6(b) is a diagram showing a solid-state imaging element 1000-6b in which the four pixels of the solid-state imaging element 1000-6a are expanded in an array.

[0117] Please refer to Fig. 6(a). Fig. 6(a) shows four pixels 1000-6a-1 to 1000-6a-4 of a solid-state imaging device 1000-6a.

[0118] A third electrode 9-3-1 is formed in the pixel 1000-3-1, a third electrode 9-3-2 is formed in the pixel 1000-3-2, a third electrode 9-3-3 is formed in the pixel 1000-3-3, and a third electrode 9-3-4 is formed in the pixel 1000-3-4.

[0119] In the pixels 1000-3-1 and 1000-3-2, a second wiring 92-6a-12 (first wiring 91-3-12) is formed in order from the light incident side. A shield 10-6a-12 is formed between the pixels 1000-3-1 and 1000-3-2. In the pixels 1000-3-3 and 1000-3-4, a second wiring 92-3-34 (first wiring 91-3-34) is formed in order from the light incident side. A shield 10-6a-34 is formed between the pixels 1000-3-3 and 1000-3-4.

[0120] Please refer to Fig. 6(b). The solid-state imaging element 1000-6b is formed by arranging a plurality of the four pixels of the solid-state imaging element 1000-6a shown in Fig. 6(a) in a two-dimensional row direction (Q direction) and column direction (P direction) as a pixel array, with the four pixels of the solid-state imaging element 1000-6a shown in Fig. 6(a) being used as a repeating unit. In the solid-state imaging element 1000-6b, the first wiring 91-6b and the second wiring 92-6b are routed so as to connect to a plurality of third electrodes 9-6b over the entire Q direction. In addition, the shield 10-6b extends between the plurality of pixels in a lattice pattern.

[0121] A solid-state imaging element 1000-7 according to a second embodiment of the present technology will be described with reference to FIG. 7. FIG. 7(a) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-7 for the first seat 81-8a, via 81-8a-A, first wiring 91-8b-1, contact hole 91-8b-A-1, etc., which are in the same layer, as shown in FIG. 8. FIG. 7(b) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-7 for the second seat 82-8a, via 82-8a-A, second wiring 92-8b-1, contact hole 92-8b-A-1, etc., which are in the same layer, as shown in FIG. 8. FIG. 7(c) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-7 for the first electrode 8-8a, shield 10-8a-1, third electrode 9-8b-1, etc., which are in the same layer, as shown in FIG. 8.

[0122] Please refer to Fig. 7(a). Fig. 7(a) shows four pixels 1000-7a-1 to 1000-7a-4 of the solid-state imaging device 1000-7.

[0123] A first wiring 91-7a-12 is formed on the upper portion of the pixel 1000-7a-1 and the pixel 1000-7a-2 (upper side in FIG. 7(a)). In the pixel 1000-7a-2, the first wiring 91-7a-12 and the first wiring 91-7a-2 are connected. A contact hole 91-7a-A-2 is connected to the first wiring 91-7a-2.

[0124] A first wiring 91-7a-34 is formed under the pixels 1000-7a-3 and 1000-7a-4 (lower side in FIG. 7(a)). In the pixel 1000-7a-3, the first wiring 91-7a-34 and the first wiring 91-7a-3 are connected. A contact hole 91-7a-A-3 is connected to the first wiring 91-7a-3.

[0125] As a result, the pixel 1000-7a-2 can be driven by the first wiring 91-7a-12 and the first wiring 91-7a-2, and the pixel 1000-7a-3 can be driven by the first wiring 91-7a-34 and the first wiring 91-7a-3. That is, the two pixels (pixel 1000-7a-2 and pixel 1000-7a-3) can be driven separately and independently.

[0126] The first seat 81-7a and the via 81-7a-A connected to the first seat 81-7a are formed to be shared by four pixels (1000-7a-1 to 1000-7a-4).

[0127] Please refer to Fig. 7(b). Fig. 7(b) shows four pixels 1000-7b-1 to 1000-7b-4 of the solid-state imaging device 1000-7.

[0128] A second wiring 92-7b-12 is formed on the upper portion (upper side in FIG. 7(b)) of the pixel 1000-7b-1 and the pixel 1000-7b-2. In the pixel 1000-7b-1, the second wiring 92-7b-12 and the second wiring 92-7b-1 are connected. A contact hole 92-7b-A-1 is connected to the second wiring 92-7b-1. In the pixel 1000-7b-2, the second wiring 92-7b-2 is connected to the first wiring (not shown) via a contact hole 92-7b-A-2.

[0129] A second wiring 92-7b-34 is formed below the pixels 1000-7b-3 and 1000-7b-4 (lower side in FIG. 7(b)). In the pixel 1000-7b-4, the second wiring 92-7b-34 and the second wiring 92-7b-4 are connected. A contact hole 92-7b-A-4 is connected to the second wiring 92-7b-4. In the pixel 1000-7b-3, the second wiring 92-7b-3 is connected to the first wiring (not shown) via a contact hole 92-7b-A-3.

[0130] As a result, the pixel 1000-7b-1 can be driven by the second wiring 92-7b-12 and the second wiring 92-7b-1, and the pixel 1000-7b-4 can be driven by the second wiring 92-7b-34 and the second wiring 92-7b-4. That is, the two pixels (pixel 1000-7b-1 and pixel 1000-7b-4) can be driven separately and independently.

[0131] The second seat 82-7b and the via 82-7b-A connected to the second seat 82-7b are formed so as to be shared by four pixels (1000-7b-1 to 1000-7b-4).

[0132] Optical waveguides 400-7b-1 to 400-7b-4 are formed for each of the four pixels 1000-7b-1 to 1000-7b-4.

[0133] Please refer to Fig. 7(c). Fig. 7(c) shows four pixels 1000-7c-1 to 1000-7c-4 of the solid-state imaging device 1000-7. For convenience, optical waveguides 400-7c-1 to 400-7c-4 are also shown in Fig. 7(c).

[0134] In the pixel 1000-7c-1, a third electrode 9-7c-1 and a second wiring 92-7c-1 are formed, and the third electrode 9-7c-1 and the second wiring 92-7c-1 are connected via a contact hole 92-7c-1-A. In the pixel 1000-7c-2, a third electrode 9-7c-2, a first wiring 91-7c-2 and a second wiring 92-7c-2 are formed, and the first wiring 91-7c-2 and the second wiring 92-7c-1 are connected via a contact hole 91-7c-A-2, and the third electrode 9-7c-2 and the second wiring 92-7c-2 are connected via a contact hole 92-7c-A-2. In the pixel 1000-7c-3, a third electrode 9-7c-3, a first wiring 91-7c-3, and a second wiring 92-7c-3 are formed, and the first wiring 91-7c-3 and the second wiring 92-7c-3 are connected through a contact hole 91-7c-A-3, and the third electrode 9-7c-3 and the second wiring 92-7c-3 are connected through a contact hole 92-7c-A-3. In the pixel 1000-7c-4, a third electrode 9-7c-4 and a second wiring 92-7c-4 are formed, and the third electrode 9-7c-4 and the second wiring 92-7c-4 are connected through a contact hole 92-7c-A-4.

[0135] A second wiring 92-7c-12 (first wiring 91-7c-12) is formed in order from the light incident side above the pixels 1000-7c-1 and 1000-7c-2 (upper side in FIG. 7(c)). In the pixel 1000-7c-1, the second wiring 92-7c-12 and the second wiring 92-7c-1 are connected, and in the pixel 1000-7c-2, the first wiring 91-7c-12 and the first wiring 91-7c-2 are connected.

[0136] A second wiring 92-7c-34 (first wiring 91-7c-34) is formed in order from the light incident side under the pixels 1000-7c-3 and 1000-7c-4 (lower side in FIG. 7(c)). In the pixel 1000-7c-3, the first wiring 91-7c-34 and the first wiring 91-7c-3 are connected, and in the pixel 1000-7c-4, the second wiring 92-7c-34 and the second wiring 92-7c-4 are connected.

[0137] As a result, the pixel 1000-7c-2 can be driven by the first wiring 91-7c-12 and the first wiring 91-7c-2, and the pixel 1000-7c-3 can be driven by the first wiring 91-7c-34 and the first wiring 91-7c-3. The pixel 1000-7c-1 can be driven by the second wiring 92-7c-12 and the second wiring 92-7c-1, and the pixel 1000-3-4 can be driven by the second wiring 92-7c-34 and the second wiring 92-7c-4. That is, the four pixels (pixels 1000-7c-1 to 1000-7c-4) can be driven independently.

[0138] The first electrode 8-7c is formed to share four pixels (1000-7c-1 to 1000-7c-4), and in order from the light incident side, the first electrode is connected to the second seat 82-7c via a via 82-7c-A, and the second seat 82-7c is connected to the first seat 81-7c via a via 81-7c-A.

[0139] A solid-state imaging element 1000-7 according to a second embodiment of the present technology will be described with reference to Fig. 8. Fig. 8(a) is a cross-sectional view of the solid-state imaging element 1000-7 taken along line A-A' shown in Fig. 7(c), Fig. 8(b) is a cross-sectional view of the solid-state imaging element 1000-7 taken along line B-B' shown in Fig. 7(c), and Fig. 8(c) is a cross-sectional view of the solid-state imaging element 1000-7 taken along line C-C' shown in Fig. 7(c).

[0140] Referring to Fig. 8(a), the solid-state imaging element 1000-7 includes at least a first electrode 8-8a, a second electrode 1-8a, a first photoelectric conversion unit 100-8a, a semiconductor layer 5-8a, a first insulating layer 6-8a, and a second insulating layer 7-8a. A transparent electrode may be used for the first electrode 8-8a.

[0141] In the solid-state imaging element 1000-7, a protective layer 11-8a, a second electrode 1-8a, a first photoelectric conversion unit 100-8a, a semiconductor layer 5-8a, and a first electrode 8-8a are arranged in this order from the light incident side (the upper side in FIG. 8(a)). The first electrode 8-8a and the two shields 10-8a-1 and 10-8a-2 are formed in the same layer.

[0142] In FIG. 8(a), the first electrode 8-8a is connected to the second seat 82-8a through a via 82-8a-A, the second seat 82-8a is connected to the first seat 81-8a through a via 81-8a-A, and the first seat 81-8a is further connected to a through electrode 89-8a.

[0143] The first photoelectric conversion section 100-8a is composed of a second carrier blocking layer 2-8a, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-8a, and a first carrier blocking layer 4-8a.

[0144] The first photoelectric conversion portion 100-8a is formed on one surface side (light incident side, the upper side in FIG. 8(a)) of a semiconductor substrate 300-8a.

[0145] Referring to Fig. 8(b), the solid-state imaging element 1000-7 includes at least shields 10-8b-1 to 10-8b-3, a second electrode 1-8b, third electrodes 9-8b-1 and 9-8b-2, a first photoelectric conversion section 100-8b, a semiconductor layer 5-8b, a first insulating layer 6-8b, a second insulating layer 7-8b, and optical waveguides 400-8b-1 and 400-8b-2. Transparent electrodes may be used for the third electrodes 9-8b-1 and 9-8b-2.

[0146] In the solid-state imaging element 1000-7, from the light incident side (the upper side in Figure 8 (b)), a protective layer 11-8b, a second electrode 1-8b, a first photoelectric conversion section 100-8b, a semiconductor layer 5-8b, shields 10-8b-1 to 10-8b-3, and optical waveguides 400-8b-1 and 400-8b-2 are arranged in this order.

[0147] The third electrodes 9-8b-1 and 9-8b-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-8b via the first insulating layer 6-8b. The third electrodes 9-8b-1 and 9-8b-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-8b-1 and 9-8b-2 and the shields 10-8b-1, 10-8b-2 and 10-8b-3 are formed in the same layer.

[0148] In FIG. 8(b), the third electrode 9-8b-1 is connected to the second wiring 92-8b-1 through a contact hole 92-8b-A-1, and the second wiring 92-8b-1 is connected to the wiring 91-8b-1 through a contact hole 91-8b-A-1. The third electrode 9-8b-2 is connected to the second wiring 92-8b-2 through a contact hole 92-8b-A-2. The first wiring 91-8b-2 and the second wiring 92-8b-3 correspond to the first wiring 91-6b and the second wiring 92-6b shown in FIG. 6(b), respectively, and are wirings formed between two pixels adjacent in the column direction (P direction in FIG. 6(b)). The second wiring 92-8b-1, the second wiring 92-8b-2, and the second wiring 92-8b-3 are formed in the same layer, and the first wiring 91-8b-1 and the first wiring 91-8b-2 are formed in the same layer.

[0149] The second insulating layer 7-8b is formed between the third electrodes 9-8b-1 and 9-8b-2 and the semiconductor substrate 300-8b.

[0150] In FIG. 8(b), optical waveguides 400-8b-1 and 400-8b-2 are formed between third electrodes 9-8b-1 and 9-8b-2 and the semiconductor substrate 300-8b.

[0151] The first photoelectric conversion section 100-8b is composed of a second carrier blocking layer 2-8b, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-8b, and a first carrier blocking layer 4-8b.

[0152] The first photoelectric conversion portion 100-8b is formed on one surface side (light incident side, the upper side in FIG. 8(b)) of a semiconductor substrate 300-8b.

[0153] Please refer to Fig. 8(c). In Fig. 8(c), the solid-state imaging element 1000-7 includes at least shields 10-8c-1 to 10-8c-3, a second electrode 1-8c, third electrodes 9-8c-1 and 9-8c-2, a first photoelectric conversion section 100-8c, a semiconductor layer 5-8c, a first insulating layer 6-8c, a second insulating layer 7-8c, and optical waveguides 400-8c-1 and 400-8c-2. Transparent electrodes may be used for the third electrodes 9-8c-1 and 9-8c-2.

[0154] In the solid-state imaging element 1000-7, from the light incident side (the upper side in Figure 8 (c)), a protective layer 11-8c, a second electrode 1-8c, a first photoelectric conversion section 100-8c, a semiconductor layer 5-8c, shields 10-8c-1 to 10-8c-3, and optical waveguides 400-8c-1 and 400-8c-2 are arranged in this order.

[0155] The third electrodes 9-8c-1 and 9-8c-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-8c via the first insulating layer 6-8c. The third electrodes 9-8c-1 and 9-8c-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-8c-1 and 9-8c-2 and the shields 10-8c-1, 10-8c-2 and 10-8c-3 are formed in the same layer.

[0156] In Fig. 8(c), the third electrode 9-8c-1 is connected to the second wiring 92-8c-1 through a contact hole 92-8c-A-1, and the second wiring 92-8c-1 is connected to the wiring 91-8c-1 through a contact hole 91-8c-A-1. The third electrode 9-8c-2 is connected to the second wiring 92-8c-2 through a contact hole 92-8c-A-2. The second wiring 92-8c-1 and the second wiring 92-8c-2 are formed in the same layer.

[0157] The second insulating layer 7-8c is formed between the third electrodes 9-8c-1 and 9-8c-2 and the semiconductor substrate 300-8c.

[0158] In FIG. 8(c), optical waveguides 400-8c-1 and 400-8c-2 are formed between third electrodes 9-8c-1 and 9-8c-2 and the semiconductor substrate 300-8c.

[0159] The first photoelectric conversion section 100-8c is composed of a second carrier blocking layer 2-8c, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-8c, and a first carrier blocking layer 4-8c.

[0160] The first photoelectric conversion portion 100-8c is formed on one surface side (the light incident side, the upper side in FIG. 8(c)) of a semiconductor substrate 300-8c.

[0161] <3. Third embodiment (third example of solid-state imaging device)> A solid-state imaging element according to a third embodiment of the present technology includes at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, an optical waveguide, and a low dielectric constant material-containing layer. In the solid-state imaging element according to the third embodiment of the present technology, the second electrode, the first photoelectric conversion section, and the first electrode are arranged in this order, the third electrode is formed apart from the first electrode and facing the first photoelectric conversion section via the first insulating layer, the second insulating layer is formed between the third electrode and the second photoelectric conversion section, and the optical waveguide is formed between the third electrode and the second photoelectric conversion section. Furthermore, in the solid-state imaging element according to the third embodiment of the present technology, the low dielectric constant material-containing layer is arranged below the optical waveguide and above the second photoelectric conversion section.

[0162] That is, the solid-state imaging element of the third embodiment of the present technology is a solid-state imaging element in which a low dielectric constant material containing layer is provided in the solid-state imaging element of the first embodiment of the present technology, and the low dielectric constant material containing layer is disposed below the optical waveguide and above the second photoelectric conversion section.

[0163] The capacitance can be further reduced by forming a low dielectric constant material-containing layer disposed below the optical waveguide and above the second photoelectric conversion section. This further capacitance reduction can be used to reduce the height, which further improves image quality, particularly sensitivity, color mixing, and shading.

[0164] The low dielectric constant material-containing layer may be a layer containing a low dielectric constant material, or may be a layer made of a low dielectric constant material. The refractive index of the low dielectric constant material is not particularly limited, but is preferably 1.6 to 1.8. The dielectric constant of the low dielectric constant material is not particularly limited, but is preferably 3, 4 to 3.6.

[0165] The low dielectric constant material is not particularly limited, but examples thereof include transparent materials such as a SiOC film and a SiOCH film.

[0166] Next, a solid-state imaging element 1000-9 according to a third embodiment of the present technology will be described with reference to Fig. 9. Fig. 9(a) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-9 for the first seat 81-10a, via 81-10a-A, first wiring 91-10b-1, contact hole 91-10b-A-1, etc., which are in the same layer, as shown in Fig. 10. Fig. 9(b) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-9 for the second seat 82-10a, via 82-10a-A, second wiring 92-10b-1, contact hole 92-10b-A-1, etc., which are in the same layer, as shown in Fig. 10. FIG. 9C is a diagram showing a planar layout of four pixels of a solid-state imaging element 1000-9 for the first electrode 8-10a, the shield 10-10a-1, the third electrode 9-10b-1, etc., which are in the same layer shown in FIG.

[0167] Please refer to Fig. 9(a). Fig. 9(a) shows four pixels 1000-9a-1 to 1000-9a-4 of a solid-state imaging element 1000-9. For convenience, Fig. 9(a) shows a low dielectric constant material containing layer 600-9a.

[0168] A first wiring 91-9a-12 is formed on the upper portion of the pixel 1000-9a-1 and the pixel 1000-9a-2 (upper side in FIG. 9(a)). In the pixel 1000-9a-2, the first wiring 91-9a-12 and the first wiring 91-9a-2 are connected. A contact hole 91-9a-A-2 is connected to the first wiring 91-9a-2.

[0169] A first wiring 91-9a-34 is formed under the pixels 1000-9a-3 and 1000-9a-4 (lower side in FIG. 9(a)). In the pixel 1000-9a-3, the first wiring 91-9a-34 and the first wiring 91-9a-3 are connected. A contact hole 91-9a-A-3 is connected to the first wiring 91-9a-3.

[0170] As a result, the pixel 1000-9a-2 can be driven by the first wiring 91-9a-12 and the first wiring 91-9a-2, and the pixel 1000-9a-3 can be driven by the first wiring 91-9a-34 and the first wiring 91-9a-3. That is, the two pixels (pixel 1000-9a-2 and pixel 1000-9a-3) can be driven separately and independently.

[0171] The first seat 81-9a and the via 81-9a-A connected to the first seat 81-9a are formed to be shared by four pixels (1000-9a-1 to 1000-9a-4).

[0172] Please refer to Fig. 9(b). Fig. 9(b) shows four pixels 1000-9b-1 to 1000-9b-4 of the solid-state imaging element 1000-9. For convenience, Fig. 9(b) shows the low dielectric constant material containing layer 600-9a.

[0173] A second wiring 92-9b-12 is formed on the upper portion (upper side in FIG. 7(b)) of the pixel 1000-9b-1 and the pixel 1000-9b-2. In the pixel 1000-9b-1, the second wiring 92-9b-12 and the second wiring 92-9b-1 are connected. A contact hole 92-9b-A-1 is connected to the second wiring 92-9b-1. In the pixel 1000-9b-2, the second wiring 92-9b-2 is connected to the first wiring (not shown) via a contact hole 92-9b-A-2.

[0174] A second wiring 92-9b-34 is formed below the pixels 1000-9b-3 and 1000-9b-4 (lower side in FIG. 7(b)). In the pixel 1000-9b-4, the second wiring 92-9b-34 and the second wiring 92-9b-4 are connected. A contact hole 92-9b-A-4 is connected to the second wiring 92-9b-4. In the pixel 1000-9b-3, the second wiring 92-9b-3 is connected to the first wiring (not shown) via a contact hole 92-9b-A-3.

[0175] As a result, the pixel 1000-9b-1 can be driven by the second wiring 92-9b-12 and the second wiring 92-9b-1, and the pixel 1000-9b-4 can be driven by the second wiring 92-9b-34 and the second wiring 92-9b-4. That is, the two pixels (pixel 1000-9b-1 and pixel 1000-9b-4) can be driven separately and independently.

[0176] The second seat 82-9b and the via 82-9b-A connected to the second seat 82-9b are formed to be shared by four pixels (1000-9b-1 to 1000-9b-4).

[0177] Please refer to Fig. 9(c). Fig. 9(c) shows four pixels 1000-9c-1 to 1000-9c-4 of the solid-state imaging element 1000-9. For convenience, Fig. 9(c) shows optical waveguides 400-9c-1 to 400-9c-4. Similarly, a low dielectric constant material containing layer 600-9c is also shown.

[0178] In the pixel 1000-9c-1, a third electrode 9-9c-1 and a second wiring 92-9c-1 are formed, and the third electrode 9-9c-1 and the second wiring 92-9c-1 are connected via a contact hole 92-9c-1-A. In the pixel 1000-9c-2, a third electrode 9-9c-2, a first wiring 91-9c-2 and a second wiring 92-9c-2 are formed, and the first wiring 91-9c-2 and the second wiring 92-9c-1 are connected via a contact hole 91-9c-A-2, and the third electrode 9-9c-2 and the second wiring 92-9c-2 are connected via a contact hole 92-9c-A-2. In the pixel 1000-9c-3, a third electrode 9-9c-3, a first wiring 91-9c-3, and a second wiring 92-9c-3 are formed, and the first wiring 91-9c-3 and the second wiring 92-9c-3 are connected through a contact hole 91-9c-A-3, and the third electrode 9-9c-3 and the second wiring 92-9c-3 are connected through a contact hole 92-9c-A-3. In the pixel 1000-9c-4, a third electrode 9-9c-4 and a second wiring 92-9c-4 are formed, and the third electrode 9-9c-4 and the second wiring 92-9c-4 are connected through a contact hole 92-9c-A-4.

[0179] A second wiring 92-9c-12 (first wiring 91-9c-12) is formed in order from the light incident side above the pixels 1000-9c-1 and 1000-9c-2 (upper side in FIG. 9(c)). In the pixel 1000-9c-1, the second wiring 92-9c-12 and the second wiring 92-9c-1 are connected, and in the pixel 1000-9c-2, the first wiring 91-9c-12 and the first wiring 91-9c-2 are connected.

[0180] A second wiring 92-9c-34 (first wiring 91-9c-34) is formed in order from the light incident side under the pixels 1000-9c-3 and 1000-9c-4 (lower side in FIG. 9(c)). In the pixel 1000-9c-3, the first wiring 91-9c-34 and the first wiring 91-9c-3 are connected, and in the pixel 1000-9c-4, the second wiring 92-9c-34 and the second wiring 92-9c-4 are connected.

[0181] As a result, the pixel 1000-9c-2 can be driven by the first wiring 91-9c-12 and the first wiring 91-9c-2, and the pixel 1000-9c-3 can be driven by the first wiring 91-9c-34 and the first wiring 91-9c-3. The pixel 1000-9c-1 can be driven by the second wiring 92-9c-12 and the second wiring 92-9c-1, and the pixel 1000-3-4 can be driven by the second wiring 92-9c-34 and the second wiring 92-9c-4. That is, the four pixels (pixels 1000-9c-1 to 1000-9c-4) can be driven independently.

[0182] The first electrode 8-9c is formed to share four pixels (1000-9c-1 to 1000-9c-4), and in order from the light incident side, the first electrode is connected to the second seat 82-9c via a via 82-9c-A, and the second seat 82-9c is connected to the first seat 81-9c via a via 81-9c-A.

[0183] A solid-state imaging element 1000-9 according to a third embodiment of the present technology will be described with reference to Fig. 10. Fig. 10(a) is a cross-sectional view of the solid-state imaging element 1000-9 taken along line A-A' shown in Fig. 9(c), Fig. 10(b) is a cross-sectional view of the solid-state imaging element 1000-9 taken along line B-B' shown in Fig. 9(c), and Fig. 10(c) is a cross-sectional view of the solid-state imaging element 1000-9 taken along line C-C' shown in Fig. 9(c).

[0184] Refer to Fig. 10(a). In Fig. 10(a), a solid-state imaging element 1000-9 includes at least a first electrode 8-10a, a second electrode 1-10a, a first photoelectric conversion unit 100-10a, a semiconductor layer 5-10a, a first insulating layer 6-10a, a second insulating layer 7-10a, and low dielectric constant material containing layers 600-10a-1 and 600-10a-2. A transparent electrode may be used for the first electrode 8-10a.

[0185] In the solid-state imaging device 1000-7, from the light incident side (upper side in FIG. 10(a)), a protective layer 11-10a, a second electrode 1-10a, a first photoelectric conversion unit 100-10a, a semiconductor layer 5-10a, a first electrode 8-10a, and low dielectric constant material containing layers 600-10a-1 and 600-10a-2 are arranged in this order. The first electrode 8-10a and the two shields 10-10a-1 and 10-10a-2 are formed in the same layer.

[0186] 10(a), the first electrode 8-10a is connected to the second seat 82-10a through a via 82-10a-A, the second seat 82-10a is connected to the first seat 81-10a through a via 81-10a-A, and the first seat 81-10a is connected to a through electrode 89-10a. The low dielectric constant material containing layers 600-10a-1 and 600-10a-2 extend around the through electrode 89-10a.

[0187] The first photoelectric conversion section 100-10a is composed of a second carrier blocking layer 2-10a, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-10a, and a first carrier blocking layer 4-10a.

[0188] The first photoelectric conversion portion 100-10a is formed on one surface side (light incident side, the upper side in FIG. 10(a)) of a semiconductor substrate 300-10a.

[0189] Referring to Fig. 10(b), the solid-state imaging element 1000-9 includes at least shields 10-10b-1 to 10-10b-3, second electrodes 1-10b, third electrodes 9-10b-1 and 9-10b-2, a first photoelectric conversion section 100-10b, a semiconductor layer 5-10b, a first insulating layer 6-10b, a second insulating layer 7-10b, optical waveguides 400-10b-1 and 400-10b-2, and a low dielectric constant material containing layer 600-10b. Transparent electrodes may be used for the third electrodes 9-10b-1 and 9-10b-2.

[0190] In the solid-state imaging element 1000-9, from the light incident side (the upper side in FIG. 10(b)), a protective layer 11-10b, a second electrode 1-10b, a first photoelectric conversion section 100-10b, a semiconductor layer 5-10b, shields 10-10b-1 to 10-10b-3, optical waveguides 400-10b-1 and 400-10b-2, and a low dielectric constant material containing layer 600-10b are arranged in this order.

[0191] The third electrodes 9-10b-1 and 9-10b-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-10b via the first insulating layer 6-10b. The third electrodes 9-10b-1 and 9-10b-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The first electrode 8-10b, the third electrodes 9-10b-1 and 9-10b-2, and the shields 10-10b-1, 10-10b-2, and 10-10b-3 are formed in the same layer.

[0192] In FIG. 10(b), the third electrode 9-10b-1 is connected to the second wiring 92-10b-1 through a contact hole 92-10b-A-1, and the second wiring 92-10b-1 is connected to the wiring 91-10b-1 through a contact hole 91-10b-A-1. The third electrode 9-10b-2 is connected to the second wiring 92-10b-2 through a contact hole 92-10b-A-2. The first wiring 91-10b-2 and the second wiring 92-10b-3 correspond to the first wiring 91-6b and the second wiring 92-6b shown in FIG. 6(b), respectively, and are wirings formed between two pixels adjacent in the column direction (P direction in FIG. 6(b)). The second wiring 92-10b-1, the second wiring 92-10b-2, and the second wiring 92-10b-3 are formed in the same layer, and the first wiring 91-10b-1 and the first wiring 91-10b-2 are formed in the same layer.

[0193] The second insulating layer 7-10b is formed between the third electrodes 9-10b-1 and 9-10b-2 and the semiconductor substrate 300-10b.

[0194] In FIG. 10(b), optical waveguides 400-10b-1 and 400-10b-2 are formed between third electrodes 9-10b-1 and 9-10b-2 and the semiconductor substrate 300-10b.

[0195] In FIG. 10(b), a low dielectric constant material containing layer 600-10b is formed between the optical waveguides 400-10b-1 and 400-10b-2 and the semiconductor substrate 300-10b.

[0196] The first photoelectric conversion section 100-10b is composed of a second carrier blocking layer 2-10b, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-10b, and a first carrier blocking layer 4-10b.

[0197] The first photoelectric conversion portion 100-10b is formed on one surface side (light incident side, the upper side in FIG. 10(b)) of the semiconductor substrate 300-10b.

[0198] Referring to Fig. 10(c), the solid-state imaging element 1000-9 includes at least shields 10-10c-1 to 10-10c-3, a second electrode 1-10c, third electrodes 9-10c-1 and 9-10c-2, a first photoelectric conversion section 100-10c, a semiconductor layer 5-10c, a first insulating layer 6-10c, a second insulating layer 7-10c, optical waveguides 400-10c-1 and 400-10c-2, and a low dielectric constant material containing layer 600-10c. Transparent electrodes may be used for the third electrodes 9-10c-1 and 9-10c-2.

[0199] In the solid-state imaging element 1000-9, from the light incident side (the upper side in FIG. 10(c)), a protective layer 11-10c, a second electrode 1-10c, a first photoelectric conversion section 100-10c, a semiconductor layer 5-10c, shields 10-10c-1 to 10-10c-3, optical waveguides 400-10c-1 and 400-10c-2, and a low dielectric constant material containing layer 600-10c are arranged in this order.

[0200] The third electrodes 9-10c-1 and 9-10c-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-10c via the first insulating layer 6-10c. The third electrodes 9-10c-1 and 9-10c-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The first electrode 8-10c, the third electrodes 9-10c-1 and 9-10c-2, and the shields 10-10c-1, 10-10c-2, and 10-10c-3 are formed in the same layer.

[0201] In Fig. 10(c), the third electrode 9-10c-1 is connected to the second wiring 92-10c-1 through a contact hole 92-10c-A-1, and the second wiring 92-10c-1 is connected to the wiring 91-10c-1 through a contact hole 91-10c-A-1. The third electrode 9-10c-2 is connected to the second wiring 92-10c-2 through a contact hole 92-10c-A-2. The second wiring 92-10c-1 and the second wiring 92-10c-2 are formed in the same layer.

[0202] The second insulating layer 7-10c is formed between the third electrodes 9-10c-1 and 9-10c-2 and the semiconductor substrate 300-10c.

[0203] In FIG. 10(c), optical waveguides 400-10c-1 and 400-10c-2 are formed between third electrodes 9-10c-1 and 9-10c-2 and a semiconductor substrate 300-10c.

[0204] In FIG. 10(c), a low dielectric constant material containing layer 600-10c is formed between the optical waveguides 400-10c-1 and 400-10c-2 and the semiconductor substrate 300-10c.

[0205] The first photoelectric conversion section 100-10c is composed of a second carrier blocking layer 2-10c, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-10c, and a first carrier blocking layer 4-10c.

[0206] The first photoelectric conversion portion 100-10c is formed on one surface side (light incident side, the upper side in FIG. 10(c)) of a semiconductor substrate 300-10c.

[0207] <4. Fourth embodiment (fourth example of solid-state imaging device)> A solid-state imaging element according to a fourth embodiment of the present technology includes at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion unit, a second photoelectric conversion unit, a first insulating layer, a second insulating layer, an optical waveguide, and an inner lens. In the solid-state imaging element according to the fourth embodiment of the present technology, the second electrode, the first photoelectric conversion unit, and the first electrode are arranged in this order, the third electrode is formed apart from the first electrode and facing the first photoelectric conversion unit via the first insulating layer, the second insulating layer is formed between the third electrode and the second photoelectric conversion unit, and the optical waveguide is formed between the third electrode and the second photoelectric conversion unit. Furthermore, in the solid-state imaging element according to the fourth embodiment of the present technology, an inner lens is arranged between the first photoelectric conversion unit and the optical waveguide.

[0208] That is, the solid-state imaging element of the fourth embodiment of the present technology is a solid-state imaging element in which an inner lens is provided in the solid-state imaging element of the first embodiment of the present technology, and the inner lens is arranged between the first photoelectric conversion unit and the optical waveguide.

[0209] By inserting an inner lens between the first photoelectric conversion unit and the optical waveguide, the light from the on-chip lens can be more efficiently collected for each pixel of the multiple pixels. Therefore, by forming both the optical waveguide and the inner lens in the solid-state imaging element, a synergistic effect of improving color mixing of adjacent pixels is achieved. In addition, by inserting the inner lens, as described above, a synergistic effect of improving color mixing of adjacent pixels is achieved, so that the second insulating layer can be made thicker and the space between the semiconductor substrate and the first photoelectric conversion unit can be made thicker. This thickening makes it possible to reduce the capacitance between the semiconductor substrate and the first electrode for the first photoelectric conversion unit, and thus a decrease in conversion efficiency and a deterioration in random noise (RN) can be prevented. In particular, the effects of improving sensitivity, shading, and color mixing can be achieved simultaneously with the effect of preventing a decrease in conversion efficiency and a deterioration in random noise (RN).

[0210] The inner lens can be made of, for example, plasma silicon nitride (P-SiN; refractive index: about 1.9 to 2.0). The shape of the inner lens can be any shape, for example, a hemisphere, or other shapes. For example, the inner lens can be rectangular.

[0211] Next, a solid-state imaging element 1000-11 according to a fourth embodiment of the present technology will be described with reference to Fig. 11. Fig. 11(a) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-11 for the first seat 81-12a, via 81-12a-A, first wiring 91-12b-1, contact hole 91-12b-A-1, etc., which are in the same layer, as shown in Fig. 12. Fig. 11(b) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-11 for the second seat 82-12a, via 82-12a-A, second wiring 92-12b-1, contact hole 92-12b-A-1, etc., which are in the same layer, as shown in Fig. 12. FIG. 11C is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-11 for the first electrode 8-12a, the shield 10-12a-1, the third electrode 9-12b-1, etc., which are in the same layer shown in FIG.

[0212] Please refer to Fig. 11(a). Fig. 11(a) shows four pixels 1000-11a-1 to 1000-11a-4 of the solid-state imaging device 1000-11.

[0213] A first wiring 91-11a-12 is formed on the upper portion of the pixel 1000-11a-1 and the pixel 1000-11a-2 (upper side in FIG. 11(a)). In the pixel 1000-11a-2, the first wiring 91-11a-12 and the first wiring 91-11a-2 are connected. A contact hole 91-11a-A-2 is connected to the first wiring 91-11a-2.

[0214] A first wiring 91-11a-34 is formed under the pixels 1000-11a-3 and 1000-11a-4 (lower side in FIG. 11(a)). In the pixel 1000-11a-3, the first wiring 91-11a-34 and the first wiring 91-11a-3 are connected. A contact hole 91-11a-A-3 is connected to the first wiring 91-11a-3.

[0215] As a result, the pixel 1000-11a-2 can be driven by the first wiring 91-11a-12 and the first wiring 91-11a-2, and the pixel 1000-11a-3 can be driven by the first wiring 91-11a-34 and the first wiring 91-11a-3. That is, the two pixels (the pixel 1000-11a-2 and the pixel 1000-11a-3) can be driven separately and independently.

[0216] The first seat 81-11a and the via 81-11a-A connected to the first seat 81-11a are formed to be shared by four pixels (1000-11a-1 to 1000-11a-4).

[0217] Please refer to Fig. 11(b). Fig. 11(b) shows four pixels 1000-11b-1 to 1000-11b-4 of the solid-state imaging device 1000-11.

[0218] A second wiring 92-11b-12 is formed on the upper part of the pixel 1000-11b-1 and the pixel 1000-11b-2 (upper side in FIG. 11(b)). In the pixel 1000-11b-1, the second wiring 92-11b-12 and the second wiring 92-11b-1 are connected. A contact hole 92-11b-A-1 is connected to the second wiring 92-11b-1. In addition, in the pixel 1000-11b-2, the second wiring 92-11b-2 is connected to the first wiring (not shown) via a contact hole 92-11b-A-2.

[0219] A second wiring 92-11b-34 is formed below the pixels 1000-11b-3 and 1000-11b-4 (lower side in FIG. 11(b)). In the pixel 1000-11b-4, the second wiring 92-11b-34 and the second wiring 92-11b-4 are connected. A contact hole 92-11b-A-4 is connected to the second wiring 92-11b-4. In the pixel 1000-11b-3, the second wiring 92-11b-3 is connected to the first wiring (not shown) via a contact hole 92-11b-A-3.

[0220] As a result, the pixel 1000-11b-1 can be driven by the second wiring 92-11b-12 and the second wiring 92-11b-1, and the pixel 1000-11b-4 can be driven by the second wiring 92-11b-34 and the second wiring 92-11b-4. That is, the two pixels (the pixel 1000-11b-1 and the pixel 1000-11b-4) can be driven separately and independently.

[0221] The second seat 82-11b and the via 82-11b-A connected to the second seat 82-11b are formed to be shared by four pixels (1000-11b-1 to 1000-11b-4).

[0222] Optical waveguides 400-11b-1 to 400-11b-4 and inner lenses 500-11b-1 to 500-11b-4 are formed for each of the four pixels 1000-11b-1 to 1000-11b-4.

[0223] Please refer to Fig. 11(c). Fig. 11(c) shows four pixels 1000-11c-1 to 1000-11c-4 of the solid-state imaging device 1000-11. For convenience, optical waveguides 400-11c-1 to 400-11c-4 are also shown in Fig. 11(c).

[0224] In the pixel 1000-11c-1, a third electrode 9-11c-1 and a second wiring 92-11c-1 are formed, and the third electrode 9-11c-1 and the second wiring 92-11c-1 are connected via a contact hole 92-11c-1-A. In the pixel 1000-11c-2, a third electrode 9-11c-2, a first wiring 91-11c-2 and a second wiring 92-11c-2 are formed, and the first wiring 91-11c-2 and the second wiring 92-11c-1 are connected via a contact hole 91-11c-A-2, and the third electrode 9-11c-2 and the second wiring 92-11c-2 are connected via a contact hole 92-11c-A-2. In the pixel 1000-11c-3, a third electrode 9-11c-3, a first wiring 91-11c-3, and a second wiring 92-11c-3 are formed, and the first wiring 91-11c-3 and the second wiring 92-11c-3 are connected through a contact hole 91-11c-A-3, and the third electrode 9-11c-3 and the second wiring 92-11c-3 are connected through a contact hole 92-11c-A-3. In the pixel 1000-11c-4, a third electrode 9-11c-4 and a second wiring 92-11c-4 are formed, and the third electrode 9-11c-4 and the second wiring 92-11c-4 are connected through a contact hole 92-11c-A-4.

[0225] A second wiring 92-11c-12 (first wiring 91-11c-12) is formed in order from the light incident side above the pixels 1000-11c-1 and 1000-11c-2 (upper side in FIG. 11(c)). In the pixel 1000-11c-1, the second wiring 92-11c-12 and the second wiring 92-11c-1 are connected, and in the pixel 1000-11c-2, the first wiring 91-11c-12 and the first wiring 91-11c-2 are connected.

[0226] A second wiring 92-9c-34 (first wiring 91-11c-34) is formed in order from the light incident side under the pixels 1000-11c-3 and 1000-11c-4 (lower side in FIG. 11(c)). In the pixel 1000-11c-3, the first wiring 91-11c-34 and the first wiring 91-11c-3 are connected, and in the pixel 1000-11c-4, the second wiring 92-11c-34 and the second wiring 92-11c-4 are connected.

[0227] As a result, the pixel 1000-11c-2 can be driven by the first wiring 91-11c-12 and the first wiring 91-11c-2, and the pixel 1000-11c-3 can be driven by the first wiring 91-11c-34 and the first wiring 91-11c-3. The pixel 1000-11c-1 can be driven by the second wiring 92-11c-12 and the second wiring 92-11c-1, and the pixel 1000-3-4 can be driven by the second wiring 92-11c-34 and the second wiring 92-11c-4. That is, the four pixels (pixels 1000-11c-1 to 1000-11c-4) can be driven independently.

[0228] The first electrode 8-11c is formed to share four pixels (1000-11c-1 to 1000-11c-4), and in order from the light incident side, the first electrode is connected to the second seat 82-11c via a via 82-11c-A, and the second seat 82-11c is connected to the first seat 81-11c via a via 81-11c-A.

[0229] A solid-state imaging element 1000-11 according to a fourth embodiment of the present technology will be described with reference to Fig. 12. Fig. 12(a) is a cross-sectional view of the solid-state imaging element 1000-11 taken along line A-A' shown in Fig. 11(c), Fig. 12(b) is a cross-sectional view of the solid-state imaging element 1000-11 taken along line B-B' shown in Fig. 11(c), and Fig. 12(c) is a cross-sectional view of the solid-state imaging element 1000-11 taken along line C-C' shown in Fig. 11(c).

[0230] Referring to Fig. 12(a), the solid-state imaging element 1000-11 includes at least a first electrode 8-12a, a second electrode 1-12a, a first photoelectric conversion unit 100-12a, a semiconductor layer 5-12a, a first insulating layer 6-12a, and a second insulating layer 7-12a. A transparent electrode may be used for the first electrode 8-12a.

[0231] In the solid-state imaging device 1000-11, a protective layer 11-12a, a second electrode 1-12a, a first photoelectric conversion unit 100-12a, a semiconductor layer 5-12a, and a first electrode 8-12a are arranged in this order from the light incident side (the upper side in FIG. 12(a)). The first electrode 8-12a and the two shields 10-12a-1 and 10-12a-2 are formed in the same layer.

[0232] In FIG. 12(a), the first electrode 8-12a is connected to the second seat 82-12a via a via 82-12a-A, the second seat 82-12a is connected to the first seat 81-12a via a via 81-12a-A, and the first seat 81-12a is further connected to a through electrode 89-12a.

[0233] The first photoelectric conversion section 100-12a is composed of a second carrier blocking layer 2-12a, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-12a, and a first carrier blocking layer 4-12a.

[0234] The first photoelectric conversion portion 100-12a is formed on one surface side (light incident side, the upper side in FIG. 12(a)) of a semiconductor substrate 300-12a.

[0235] Referring to Fig. 12(b), the solid-state imaging element 1000-11 includes at least shields 10-12b-1 to 10-12b-3, second electrodes 1-12b, third electrodes 9-12b-1 and 9-12b-2, a first photoelectric conversion section 100-12b, a semiconductor layer 5-12b, a first insulating layer 6-12b, a second insulating layer 7-12b, optical waveguides 400-12b-1 and 400-12b-2, and inner lenses 500-12b-1 and 500-12b-2. Transparent electrodes may be used for the third electrodes 9-12b-1 and 9-12b-2.

[0236] In the solid-state imaging element 1000-11, from the light incident side (the upper side in Figure 12 (b)), a protective layer 11-12b, a second electrode 1-12b, a first photoelectric conversion section 100-12b, a semiconductor layer 5-12b, shields 10-12b-1 to 10-12b-3, inner lenses 500-12b-1 and 500-12b-2, and optical waveguides 400-12b-1 and 400-12b-2 are arranged in this order.

[0237] The third electrodes 9-12b-1 and 9-12b-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-12b via the first insulating layer 6-12b. The third electrodes 9-12b-1 and 9-12b-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The first electrode 8-12b, the third electrodes 9-12b-1 and 9-12b-2, and the shields 10-12b-1, 10-12b-2, and 10-12b-3 are formed in the same layer.

[0238] In FIG. 12(b), the third electrode 9-12b-1 is connected to the second wiring 92-12b-1 through a contact hole 92-12b-A-1, and the second wiring 92-12b-1 is connected to the wiring 91-12b-1 through a contact hole 91-12b-A-1. The third electrode 9-12b-2 is connected to the second wiring 92-12b-2 through a contact hole 92-12b-A-2. The first wiring 91-12b-2 and the second wiring 92-12b-3 correspond to the first wiring 91-6b and the second wiring 92-6b shown in FIG. 6(b), respectively, and are wirings formed between two pixels adjacent in the column direction (P direction in FIG. 6(b)). The second wiring 92-12b-1, the second wiring 92-12b-2, and the second wiring 92-12b-3 are formed in the same layer, and the first wiring 91-12b-1 and the first wiring 91-12b-2 are formed in the same layer.

[0239] The second insulating layer 7-12b is formed between the third electrodes 9-12b-1 and 9-12b-2 and the semiconductor substrate 300-12b.

[0240] In FIG. 12(b), optical waveguides 400-12b-1 and 400-12b-2 are formed between third electrodes 9-12b-1 and 9-12b-2 and the semiconductor substrate 300-12b.

[0241] In FIG. 12(b), the inner lenses 500-12b-1 and 500-12b-2 are formed between the optical waveguides 400-12b-1 and 400-12b-2 and the third electrodes 9-12b-1 and 9-12b-2.

[0242] The first photoelectric conversion section 100-12b is composed of a second carrier blocking layer 2-12b, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-12b, and a first carrier blocking layer 4-12b.

[0243] The first photoelectric conversion portion 100-12b is formed on one surface side (light incident side, the upper side in FIG. 12(b)) of a semiconductor substrate 300-12b.

[0244] Please refer to Fig. 12(c). In Fig. 12(c), the solid-state imaging element 1000-11 includes at least shields 10-12c-1 to 10-12c-3, second electrodes 1-12c, third electrodes 9-12c-1 and 9-12c-2, a first photoelectric conversion section 100-12c, a semiconductor layer 5-12c, a first insulating layer 6-12c, a second insulating layer 7-12c, optical waveguides 400-12c-1 and 400-12c-2, and inner lenses 500-12c-1 and 500-12c-2. Transparent electrodes may be used for the third electrodes 9-12c-1 and 9-12c-2.

[0245] In the solid-state imaging element 1000-11, from the light incident side (the upper side in Figure 12 (c)), a protective layer 11-12c, a second electrode 1-12c, a first photoelectric conversion section 100-12c, a semiconductor layer 5-12c, shields 10-12c-1 to 10-12c-3, inner lenses 500-12c-1 and 500-12c-2, and optical waveguides 400-12c-1 and 400-12c-2 are arranged in this order.

[0246] The third electrodes 9-12c-1 and 9-12c-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-12c via the first insulating layer 6-12c. The third electrodes 9-12c-1 and 9-12c-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The first electrode 8-12c, the third electrodes 9-12c-1 and 9-12c-2, and the shields 10-12c-1, 10-12c-2, and 10-12c-3 are formed in the same layer.

[0247] In Fig. 12(c), the third electrode 9-12c-1 is connected to the second wiring 92-12c-1 through a contact hole 92-12c-A-1, and the second wiring 92-12c-1 is connected to the wiring 91-12c-1 through a contact hole 91-12c-A-1. The third electrode 9-12c-2 is connected to the second wiring 92-12c-2 through a contact hole 92-12c-A-2. The second wiring 92-12c-1 and the second wiring 92-12c-2 are formed in the same layer.

[0248] The second insulating layer 7-12c is formed between the third electrodes 9-12c-1 and 9-12c-2 and the semiconductor substrate 300-12c.

[0249] In FIG. 12(c), optical waveguides 400-12c-1 and 400-12c-2 are formed between third electrodes 9-12c-1 and 9-12c-2 and a semiconductor substrate 300-12c.

[0250] In FIG. 12(c), the inner lenses 500-12c-1 and 500-12c-2 are formed between the optical waveguides 400-12c-1 and 400-12c-2 and the third electrodes 9-12c-1 and 9-12c-2.

[0251] The first photoelectric conversion section 100-12c is composed of a second carrier blocking layer 2-12c, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-12c, and a first carrier blocking layer 4-12c.

[0252] The first photoelectric conversion unit 100-12c is formed on one surface side (light incident side, the upper side in FIG. 12(c)) of a semiconductor substrate 300-12c.

[0253] <5. Fifth embodiment (fifth example of solid-state imaging device)> A solid-state imaging element according to a fifth embodiment of the present technology is a solid-state imaging element including at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, an optical waveguide, and at least one wiring connected to the third electrode. In the solid-state imaging element according to the fifth embodiment of the present technology, the second electrode, the first photoelectric conversion section, and the first electrode are arranged in this order, the third electrode is formed apart from the first electrode and facing the first photoelectric conversion section via the first insulating layer, the second insulating layer is formed between the third electrode and the second photoelectric conversion section, and the optical waveguide is formed between the third electrode and the second photoelectric conversion section. Furthermore, in the solid-state imaging element according to the fifth embodiment of the present technology, at least one wiring connected to the third electrode includes a transparent material, and at least one wiring and an optical waveguide are arranged in this order from the light incident side.

[0254] That is, the solid-state imaging element of the fifth embodiment of the present technology is a solid-state imaging element in which at least one wiring including a transparent material is provided in the solid-state imaging element of the first embodiment of the present technology, and the at least one wiring and an optical waveguide are arranged in this order from the light incident side.

[0255] A solid-state imaging element 1000-13 according to a fifth embodiment of the present technology will be described with reference to Fig. 13. Fig. 13(a) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-13 for the first seat 81-14a, via 81-14a-A, first wiring 91-14b-1, contact hole 91-14b-A-1, etc., which are in the same layer, as shown in Fig. 14. Fig. 13(b) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-13 for the second seat 82-14a, via 82-14a-A, second wiring 92-14b-1, contact hole 92-14b-A-1, etc., which are in the same layer, as shown in Fig. 14. FIG. 13C is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-13 for the first electrode 8-14a, the shield 10-14a-1, the third electrode 9-14b-1, etc., which are in the same layer shown in FIG.

[0256] Please refer to Fig. 13(a). Fig. 13(a) shows four pixels 1000-13a-1 to 1000-13a-4 of the solid-state imaging device 1000-13.

[0257] A first transparent wiring 91-13a-12 is formed on the upper part of the pixel 1000-13a-1 and the pixel 1000-13a-2 (upper side in FIG. 13(a)). In the pixel 1000-13a-2, the first transparent wiring 91-13a-12 (hereinafter, may be simply referred to as the first wiring 91-13a-12) and the first transparent wiring 91-13a-2-2 (hereinafter, may be simply referred to as the first wiring 91-13a-2-2) are connected. A contact hole 91-13a-2-A-2 is connected to the first transparent wiring 91-13a-2-2.

[0258] A first transparent wiring 91-13a-34 (hereinafter, sometimes simply referred to as the first wiring 91-13a-34) is formed under the pixels 1000-13a-3 and 1000-13a-4 (lower side in FIG. 13(a)). In the pixel 1000-13a-3, the first transparent wiring 91-13a-34 and the first transparent wiring 91-13a-2-3 (hereinafter, sometimes simply referred to as the first wiring 91-13a-2-3) are connected. A contact hole 91-13a-2-A-3 is connected to the first transparent wiring 91-13a-2-3.

[0259] In addition, the first transparent wiring 91-13a-1-1 to the first transparent wiring 91-13a-1-4 are formed for each of the four pixels 1000-13a-1 to 1000-13a-4. The first transparent wiring 91-13a-1-2 is connected to the first transparent wiring 91-13a-2-2, and the first transparent wiring 91-13a-1-3 is connected to the first transparent wiring 91-13a-2-3. Since the transparent wiring does not block light, the transparent wiring 91-13a-1-1 to the transparent wiring 91-13a-1-4 can be routed throughout each of the four pixels 1000-13a-1 to 1000-13a-4.

[0260] This allows the pixel 1000-13a-2 to be driven by the first transparent wiring 91-13a-12 and the first transparent wiring 91-13a-2-2, and the pixel 1000-13a-3 to be driven by the first transparent wiring 91-13a-34 and the first wiring 91-13a-2-3. In other words, the two pixels (pixel 1000-13a-2 and pixel 1000-13a-3) can be driven separately and independently.

[0261] The first seat 81-13a and the via 81-13a-A connected to the first seat 81-13a are formed to be shared by four pixels (1000-13a-1 to 1000-13a-4).

[0262] Please refer to Fig. 13(b). Fig. 13(b) shows four pixels 1000-13b-1 to 1000-13b-4 of the solid-state imaging device 1000-13.

[0263] A second transparent wiring 92-13b-12 is formed on the upper portion of the pixel 1000-13b-1 and the pixel 1000-13b-2 (upper side in FIG. 13(b)). In the pixel 1000-13b-1, the second transparent wiring 92-13b-12 and the second transparent wiring 92-13b-2-1 are connected. A contact hole 92-13b-2-A-1 is connected to the second transparent wiring 92-13b-2-1.

[0264] A second transparent wiring 92-13b-34 is formed under the pixels 1000-13b-3 and 1000-13b-4 (lower side in FIG. 13(b)). In the pixel 1000-13b-4, the second transparent wiring 92-13b-34 and the second transparent wiring 92-13b-2-4 are connected. A contact hole 92-13b-2-A-4 is connected to the second transparent wiring 92-13b-2-4.

[0265] Further, the second transparent wiring 92-13b-1-1 to the second transparent wiring 92-13b-1-4 are formed for each of the four pixels 1000-13b-1 to 1000-13b-4. The second transparent wiring 91-13b-1-1 is connected to the second transparent wiring 92-13b-2-1, and the second transparent wiring 91-13b-1-4 is connected to the second transparent wiring 92-13b-2-4. Since the transparent wiring does not block light, the transparent wiring 91-13b-1-1 to the transparent wiring 91-13b-1-4 can be routed throughout each of the four pixels 1000-13b-1 to 1000-13b-4.

[0266] This allows the pixel 1000-13b-1 to be driven by the second transparent wiring 92-13b-12 and the second transparent wiring 92-13b-2-1, and the pixel 1000-13b-4 to be driven by the second transparent wiring 92-13b-34 and the second transparent wiring 92-13b-2-4. In other words, the two pixels (pixel 1000-13b-2 and pixel 1000-13b-4) can be driven separately and independently.

[0267] The second seat 82-13b and the via 82-13b-A connected to the second seat 82-13b are formed to be shared by four pixels (1000-13b-1 to 1000-13b-4).

[0268] Please refer to Fig. 13(c). Fig. 13(c) shows four pixels 1000-13c-1 to 1000-13c-4 of the solid-state imaging device 1000-13. For convenience, optical waveguides 400-13c-1 to 400-13c-4 are also shown in Fig. 13(c).

[0269] In the pixel 1000-13c-1, a third electrode 9-13c-1 and a second transparent wiring 92-13c-2-1 are formed, and the third electrode 9-13c-1 and the second transparent wiring 92-13c-2-1 are connected via a contact hole 92-13c-1-A-1. In the pixel 1000-13c-2, a third electrode 9-13c-2, a first transparent wiring 91-13c-2-2 and a second transparent wiring 92-13c-2-2 are formed, and the first transparent wiring 91-13c-2-2 and the second transparent wiring 92-13c-2-2 are connected via a contact hole 91-13c-2-A-2, and the third electrode 9-13c-2 and the second transparent wiring 92-13c-2-2 are connected via a contact hole 92-13c-2-A-2. In the pixel 1000-13c-3, a third electrode 9-13c-3, a first transparent wiring 91-13c-2-3, and a second transparent wiring 92-13c-2-3 are formed, and the first transparent wiring 91-13c-2-3 and the second transparent wiring 92-13c-2-3 are connected through a contact hole 91-13c-2-A-3, and the third electrode 9-13c-3 and the second transparent wiring 92-13c-2-3 are connected through a contact hole 92-13c-2-A-3. In the pixel 1000-13c-4, a third electrode 9-13c-4 and a second transparent wiring 92-13c-2-4 are formed, and the third electrode 9-13c-4 and the second transparent wiring 92-13c-2-4 are connected through a contact hole 92-13c-2-A-4.

[0270] A second transparent wiring 92-13c-12 (first transparent wiring 91-13c-12) is formed in order from the light incident side above the pixels 1000-13c-1 and 1000-13c-2 (upper side in FIG. 13(c)). In the pixel 1000-13c-1, the second transparent wiring 92-13c-12 and the second transparent wiring 92-13c-1 are connected, and in the pixel 1000-13c-2, the first transparent wiring 91-13c-12 and the first transparent wiring 91-13c-2 are connected.

[0271] A second transparent wiring 92-13c-34 (first transparent wiring 91-13c-34) is formed in order from the light incident side under the pixels 1000-13c-3 and 1000-13c-4 (lower side in FIG. 13(c)). In the pixel 1000-13c-3, the first transparent wiring 91-13c-34 and the first transparent wiring 91-13c-3 are connected, and in the pixel 1000-13c-4, the second transparent wiring 92-13c-34 and the second transparent wiring 92-13c-4 are connected.

[0272] This allows the pixel 1000-13c-2 to be driven by the first transparent wiring 91-13c-12 and the first transparent wiring 91-13c-2-2, and the pixel 1000-13c-3 to be driven by the first transparent wiring 91-13c-34 and the first transparent wiring 91-13c-2-3. The pixel 1000-13c-1 can be driven by the second transparent wiring 92-13c-12 and 92-13c-2-1, and the pixel 1000-3-4 can be driven by the second transparent wiring 92-13c-34 and the second transparent wiring 92-13c-2-4. In other words, the four pixels (pixels 1000-13c-1 to 1000-13c-4) can be driven independently.

[0273] The first electrode 8-13c is formed to share four pixels (1000-13c-1 to 1000-13c-4), and in order from the light incident side, the first electrode is connected to the second seat 82-13c via a via 82-13c-A, and the second seat 82-13c is connected to the first seat 81-13c via a via 81-13c-A.

[0274] A solid-state imaging element 1000-13 according to a fifth embodiment of the present technology will be described with reference to Fig. 14. Fig. 14(a) is a cross-sectional view of the solid-state imaging element 1000-13 taken along line A-A' shown in Fig. 13(c), Fig. 14(b) is a cross-sectional view of the solid-state imaging element 1000-13 taken along line B-B' shown in Fig. 13(c), and Fig. 14(c) is a cross-sectional view of the solid-state imaging element 1000-13 taken along line C-C' shown in Fig. 13(c).

[0275] Referring to Fig. 14(a), the solid-state imaging element 1000-13 includes at least a first electrode 8-14a, a second electrode 1-14a, a first photoelectric conversion unit 100-14a, a semiconductor layer 5-14a, a first insulating layer 6-14a, and a second insulating layer 7-14a. A transparent electrode may be used for the first electrode 8-14a.

[0276] In the solid-state imaging device 1000-13, a protective layer 11-14a, a second electrode 1-14a, a first photoelectric conversion unit 100-14a, a semiconductor layer 5-14a, and a first electrode 8-14a are arranged in this order from the light incident side (the upper side in FIG. 14(a)). The first electrode 8-14a and the two shields 10-14a-1 and 10-14a-2 are formed in the same layer.

[0277] In FIG. 14(a), the first electrode 8-14a is connected to the second seat 82-14a via a via 82-14a-A, the second seat 82-14a is connected to the first seat 81-14a via a via 81-14a-A, and the first seat 81-14a is further connected to a through electrode 89-14a.

[0278] The first photoelectric conversion section 100-14a is composed of a second carrier blocking layer 2-14a, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-14a, and a first carrier blocking layer 4-14a.

[0279] The first photoelectric conversion portion 100-14a is formed on one surface side (light incident side, the upper side in FIG. 14(a)) of a semiconductor substrate 300-14a.

[0280] Please refer to Fig. 14(b). In Fig. 14(b), the solid-state imaging element 1000-13 includes at least shields 10-14b-1 to 10-14b-3, a second electrode 1-14b, third electrodes 9-14b-1 and 9-14b-2, a first photoelectric conversion section 100-14b, a semiconductor layer 5-14b, a first insulating layer 6-14b, and a second insulating layer 7-14b. Transparent electrodes may be used for the third electrodes 9-14b-1 and 9-14b-2.

[0281] In the solid-state imaging element 1000-13, a protective layer 11-14b, a second electrode 1-14b, a first photoelectric conversion section 100-14b, a semiconductor layer 5-14b, and shields 10-14b-1 to 10-14b-3 are arranged in this order from the light incident side (the upper side in FIG. 14(b)).

[0282] The third electrodes 9-14b-1 and 9-14b-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-14b via the first insulating layer 6-14b. The third electrodes 9-14b-1 and 9-14b-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-14b-1 and 9-14b-2 and the shields 10-14b-1, 10-14b-2, and 10-14b-3 are formed in the same layer.

[0283] In FIG. 14(b), the third electrode 9-14b-1 is connected to the second wiring 92-14b-1 through a contact hole 92-14b-A-1, and the second wiring 92-14b-1 is connected to the first wiring 91-14b-1 through a contact hole 91-14b-A-1. The third electrode 9-14b-2 is connected to the second wiring 92-14b-2 through a contact hole 92-14b-A-2. The first wiring 91-14b-3 and the second wiring 92-14b-3 correspond to the first wiring 91-6b and the second wiring 92-6b shown in FIG. 6(b), respectively, and are wirings formed between two pixels adjacent in the column direction (P direction in FIG. 6(b)). The second wiring 92-14b-1, the second wiring 92-14b-2, and the second wiring 92-14b-3 are formed in the same layer, and the first wiring 91-14b-1, the first wiring 91-14b-2, and the first wiring 91-14b-3 are formed in the same layer. The second wiring 92-14b-1, the second wiring 92-14b-2, and the first wiring 91-14b-1, and the first wiring 91-14b-2 are transparent wiring, and transparent wiring does not block light, so the wiring area can be increased, for example, by extending it over the entire pixel.

[0284] The second insulating layer 7-14b is formed between the third electrodes 9-14b-1 and 9-14b-2 and the semiconductor substrate 300-14b.

[0285] The first photoelectric conversion section 100-14b is composed of a second carrier blocking layer 2-14b, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-14b, and a first carrier blocking layer 4-14b.

[0286] The first photoelectric conversion portion 100-14b is formed on one surface side (the light incident side, the upper side in FIG. 14(b)) of the semiconductor substrate 300-14b.

[0287] Please refer to Fig. 14(c). In Fig. 14(c), the solid-state imaging element 1000-13 includes at least shields 10-14c-1 to 10-14c-3, a second electrode 1-14c, third electrodes 9-14c-1 and 9-14c-2, a first photoelectric conversion unit 100-14c, a semiconductor layer 5-14c, a first insulating layer 6-14c, and a second insulating layer 7-14c. Transparent electrodes may be used for the third electrodes 9-14c-1 and 9-14c-2.

[0288] In the solid-state imaging element 1000-13, a protective layer 11-14c, a second electrode 1-14c, a first photoelectric conversion section 100-14c, a semiconductor layer 5-14c, and shields 10-14c-1 to 10-14c-3 are arranged in this order from the light incident side (the upper side in FIG. 14(c)).

[0289] The third electrodes 9-14c-1 and 9-14c-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-14c via the first insulating layer 6-14c. The third electrodes 9-14c-1 and 9-14c-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-14c-1 and 9-14c-2 and the shields 10-14c-1, 10-14c-2, and 10-14c-3 are formed in the same layer.

[0290] In Fig. 14(c), the third electrode 9-14c-1 is connected to the second wiring 92-14c-1 through a contact hole 92-14c-A-1, and the second wiring 92-14c-1 is connected to the first wiring 91-14c-1 through a contact hole 91-14c-A-1. The third electrode 9-14c-2 is connected to the second wiring 92-14c-2 through a contact hole 92-14c-A-2. The second wiring 92-14c-1 and the second wiring 92-14c-2 are formed in the same layer, and the first wiring 91-14c-1 and the first wiring 91-14c-2 are formed in the same layer. The second wiring 92-14c-1, the second wiring 92-14c-2, the first wiring 91-14c-1 and the first wiring 91-14c-2 are transparent wirings, and since transparent wirings do not block light, the wiring area can be increased, for example, by extending them over the entire pixel.

[0291] The second insulating layer 7-14c is formed between the third electrodes 9-14c-1 and 9-14c-2 and the semiconductor substrate 300-14c.

[0292] The first photoelectric conversion section 100-14c is composed of a second carrier blocking layer 2-14c, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-14c, and a first carrier blocking layer 4-14c.

[0293] The first photoelectric conversion unit 100-14c is formed on one surface side (the light incident side, the upper side in FIG. 14(c)) of a semiconductor substrate 300-14c.

[0294] A solid-state imaging element 1000-15 according to a fifth embodiment of the present technology will be described with reference to Fig. 15. Fig. 15(a) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-15 for the first seat 81-16a, via 81-16a-A, first wiring 91-16b-1, contact hole 91-16b-A-1, etc., which are in the same layer, as shown in Fig. 16. Fig. 15(b) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-15 for the second seat 82-16a, via 82-16a-A, second wiring 92-16b-1, contact hole 92-16b-A-1, etc., which are in the same layer, as shown in Fig. 16. FIG. 15C is a diagram showing a planar layout of four pixels of a solid-state imaging element 1000-15 for the first electrode 8-16a, the shield 10-16a-1, the third electrode 9-16b-1, etc., which are in the same layer shown in FIG.

[0295] Please refer to Fig. 15(a). Fig. 15(a) shows four pixels 1000-15a-1 to 1000-15a-4 of a solid-state imaging device 1000-15. For convenience, optical waveguides 400-15a-1 to 400-15a-4 are also shown in Fig. 15(a).

[0296] A first transparent wiring 91-15a-12 is formed on the upper portion of the pixel 1000-15a-1 and the pixel 1000-15a-2 (upper side in FIG. 15(a)). In the pixel 1000-15a-2, the first transparent wiring 91-15a-12 and the first transparent wiring 91-15a-2-2 are connected. A contact hole 91-15a-2-A-2 is connected to the first transparent wiring 91-15a-2-2.

[0297] A first transparent wiring 91-15a-34 is formed under the pixels 1000-15a-3 and 1000-15a-4 (lower side in FIG. 15(a)). In the pixel 1000-15a-3, the first transparent wiring 91-15a-34 and the first transparent wiring 91-15a-2-3 are connected. A contact hole 91-15a-2-A-3 is connected to the first transparent wiring 91-15a-2-3.

[0298] Further, first transparent wiring 91-15a-1-1 through first transparent wiring 91-15a-1-4 are formed for each of the four pixels 1000-15a-1 through 1000-15a-4. The first transparent wiring 91-15a-1-2 is connected to the first transparent wiring 91-15a-2-2, and the first transparent wiring 91-15a-1-3 is connected to the first transparent wiring 91-15a-2-3.

[0299] Since the transparent wiring does not block light, the transparent wiring 91-15a-1-1 through the transparent wiring 91-15a-1-4 can be routed around all of the four pixels 1000-15a-1 through 1000-15a-4.

[0300] As a result, the pixel 1000-15a-2 can be driven by the first transparent wiring 91-15a-12 and the first transparent wiring 91-15a-1-2, and the pixel 1000-15a-3 can be driven by the first transparent wiring 91-15a-34 and the first transparent wiring 91-15a-2-3. In other words, the two pixels (pixel 1000-15a-2 and pixel 1000-15a-3) can be driven separately and independently.

[0301] The first seat 81-15a and the via 81-15a-A connected to the first seat 81-15a are formed to be shared by four pixels (1000-15a-1 to 1000-15a-4).

[0302] Please refer to Fig. 15(b). Fig. 15(b) shows four pixels 1000-15b-1 to 1000-15b-4 of the solid-state imaging device 1000-15. For convenience, Fig. 15(b) also shows optical waveguides 400-15b-1 to 400-15b-4.

[0303] A second transparent wiring 92-15b-12 is formed on the upper portion of the pixel 1000-15b-1 and the pixel 1000-15b-2 (upper side in FIG. 15(b)). In the pixel 1000-15b-1, the second transparent wiring 92-15b-12 and the second transparent wiring 92-15b-2-1 are connected. A contact hole 92-15b-2-A-1 is connected to the second transparent wiring 92-15b-2-1.

[0304] A second transparent wiring 92-15b-34 is formed under the pixels 1000-15b-3 and 1000-15b-4 (lower side in FIG. 15(b)). In the pixel 1000-15b-4, the second transparent wiring 92-15b-34 and the second transparent wiring 92-15b-2-4 are connected. A contact hole 92-15b-2-A-4 is connected to the second transparent wiring 92-15b-2-4.

[0305] In addition, the second transparent wiring 92-15b-1-1 to the second transparent wiring 92-15b-1-4 are formed for each of the four pixels 1000-15b-1 to 1000-15b-4. The second transparent wiring 91-15b-1-1 is connected to the second transparent wiring 92-15b-2-1, and the second transparent wiring 91-15b-1-4 is connected to the second transparent wiring 92-15b-2-4. Since the transparent wiring does not block light, the transparent wiring 91-13b-1-1 to the transparent wiring 91-13b-1-4 can be routed throughout each of the four pixels 1000-13b-1 to 1000-13b-4.

[0306] This allows the pixel 1000-15b-1 to be driven by the second transparent wiring 92-15b-12 and the second transparent wiring 92-15b-2-1, and the pixel 1000-15b-4 to be driven by the second transparent wiring 92-15b-34 and the second transparent wiring 92-15b-2-4. In other words, the two pixels (pixel 1000-15b-1 and pixel 1000-15b-4) can be driven separately and independently.

[0307] The second seat 82-13b and the via 82-13b-A connected to the second seat 82-13b are formed to be shared by four pixels (1000-13b-1 to 1000-13b-4).

[0308] Please refer to Fig. 15(c). Fig. 15(c) shows four pixels 1000-15c-1 to 1000-15c-4 of the solid-state imaging device 1000-15. For convenience, Fig. 15(c) also shows optical waveguides 400-15c-1 to 400-15c-4.

[0309] In the pixel 1000-15c-1, a third electrode 9-15c-1 and a second transparent wiring 92-15c-2-1 are formed, and the third electrode 9-15c-1 and the second transparent wiring 92-15c-2-1 are connected through a contact hole 92-15c-2-A-1. In the pixel 1000-15c-2, a third electrode 9-15c-2, a first transparent wiring 91-15c-2-2 and a second transparent wiring 92-15c-2-2 are formed, and the first transparent wiring 91-15c-2-2 and the second transparent wiring 92-15c-2-2 are connected through a contact hole 91-15c-2-A-2, and the third electrode 9-15c-2 and the second transparent wiring 92-15c-2-2 are connected through a contact hole 92-15c-2-A-2. In the pixel 1000-15c-3, the third electrode 9-15c-3, the first transparent wiring 91-15c-2-3 and the second transparent wiring 92-15c-2-3 are formed, and the first transparent wiring 91-15c-2-3 and the second transparent wiring 92-15c-2-3 are connected through the contact hole 91-15c-2-A-3, and the third electrode 9-15c-3 and the second transparent wiring 92-15c-2-3 are connected through the contact hole 92-15c-2-A-3. In the pixel 1000-15c-4, the third electrode 9-15c-4 and the second transparent wiring 92-15c-2-4 are formed, and the third electrode 9-15c-4 and the second transparent wiring 92-15c-2-4 are connected through the contact hole 92-15c-2-A-4.

[0310] A second transparent wiring 92-15c-12 (first transparent wiring 91-15c-12) is formed in order from the light incident side on the upper part of the pixel 1000-15c-1 and the pixel 1000-15c-2 (upper side in FIG. 15(c)). In the pixel 1000-15c-1, the second transparent wiring 92-15c-12 and the second transparent wiring 92-15c-2-1 are connected, and in the pixel 1000-15c-2, the first transparent wiring 91-15c-12 and the first transparent wiring 91-15c-2-2 are connected.

[0311] A second transparent wiring 92-15c-34 (first wiring 91-15c-34) is formed in order from the light incident side under the pixels 1000-15c-3 and 1000-15c-4 (lower side in FIG. 15(c)). In the pixel 1000-15c-3, the first transparent wiring 91-15c-34 and the first transparent wiring 91-15c-3 are connected, and in the pixel 1000-15c-4, the second transparent wiring 92-15c-34 and the second transparent wiring 92-15c-4 are connected.

[0312] As a result, the pixel 1000-15c-2 can be driven by the first transparent wiring 91-15c-12 and the first transparent wiring 91-15c-2-2, and the pixel 1000-15c-3 can be driven by the first transparent wiring 91-15c-34 and the first transparent wiring 91-15c-2-3. The pixel 1000-15c-1 can be driven by the second transparent wiring 92-15c-12 and the second transparent wiring 92-15c-2-1, and the pixel 1000-3-4 can be driven by the second transparent wiring 92-15c-34 and the second transparent wiring 92-15c-2-4. That is, the four pixels (pixels 1000-15c-1 to 1000-15c-4) can be driven independently.

[0313] The first electrode 8-15c is formed to share four pixels (1000-15c-1 to 1000-15c-4), and in order from the light incident side, the first electrode is connected to the second seat 82-15c via a via 82-15c-A, and the second seat 82-15c is connected to the first seat 81-15c via a via 81-15c-A.

[0314] A solid-state imaging element 1000-15 according to a fifth embodiment of the present technology will be described with reference to Fig. 16. Fig. 16(a) is a cross-sectional view of the solid-state imaging element 1000-15 taken along line A-A' shown in Fig. 15(c), Fig. 16(b) is a cross-sectional view of the solid-state imaging element 1000-15 taken along line B-B' shown in Fig. 15(c), and Fig. 16(c) is a cross-sectional view of the solid-state imaging element 1000-15 taken along line C-C' shown in Fig. 15(c).

[0315] Referring to Fig. 16(a), a solid-state imaging element 1000-15 includes at least a first electrode 8-16a, a second electrode 1-16a, a first photoelectric conversion unit 100-16a, a semiconductor layer 5-16a, a first insulating layer 6-16a, and a second insulating layer 7-16a. A transparent electrode may be used for the first electrode 8-16a.

[0316] In the solid-state imaging element 1000-15, from the light incident side (the upper side in FIG. 16(a)), a protective layer 11-16a, a second electrode 1-16a, a first photoelectric conversion unit 100-16a, a semiconductor layer 5-16a, and a first electrode 8-16a are arranged in this order. The first electrode 8-16a and the two shields 10-16a-1 and 10-16a-2 are formed in the same layer.

[0317] In FIG. 16(a), the first electrode 8-16a is connected to the second seat 82-16a via a via 82-16a-A, the second seat 82-16a is connected to the first seat 81-16a via a via 81-16a-A, and the first seat 81-16a is further connected to a through electrode 89-16a.

[0318] The first photoelectric conversion section 100-16a is composed of a second carrier blocking layer 2-16a, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-16a, and a first carrier blocking layer 4-16a.

[0319] The first photoelectric conversion portion 100-16a is formed on one surface side (light incident side, the upper side in FIG. 16(a)) of a semiconductor substrate 300-16a.

[0320] Please refer to Fig. 16(b). In Fig. 16(b), the solid-state imaging element 1000-15 includes at least shields 10-16b-1 to 10-16b-3, second electrodes 1-16b, third electrodes 9-16b-1 and 9-16b-2, a first photoelectric conversion section 100-16b, a semiconductor layer 5-16b, a first insulating layer 6-16b, a second insulating layer 7-16b, and optical waveguides 400-16b-1 and 400-16b-2. Transparent electrodes may be used for the third electrodes 9-16b-1 and 9-16b-2.

[0321] In the solid-state imaging element 1000-15, from the light incident side (the upper side in Figure 16 (b)), a protective layer 11-16b, a second electrode 1-16b, a first photoelectric conversion section 100-16b, a semiconductor layer 5-16b, shields 10-16b-1 to 10-16b-3, and optical waveguides 400-16b-1 and 400-16b-2 are arranged in this order.

[0322] The third electrodes 9-16b-1 and 9-16b-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-16b via the first insulating layer 6-16b. The third electrodes 9-16b-1 and 9-16b-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-16b-1 and 9-16b-2 and the shields 10-16b-1, 10-16b-2, and 10-16b-3 are formed in the same layer.

[0323] In FIG. 16(b), the third electrode 9-16b-1 is connected to the second wiring 92-16b-1 through a contact hole 92-16b-A-1, and the second wiring 92-16b-1 is connected to the first wiring 91-16b-1 through a contact hole 91-16b-A-1. The third electrode 9-16b-2 is connected to the second wiring 92-16b-2 through a contact hole 92-16b-A-2. The first wiring 91-16b-3 and the second wiring 92-16b-3 correspond to the first wiring 91-6b and the second wiring 92-6b shown in FIG. 6(b), respectively, and are wirings formed between two pixels adjacent in the column direction (P direction in FIG. 6(b)). The second wiring 92-16b-1, the second wiring 92-16b-2, and the second wiring 92-16b-3 are formed in the same layer, and the first wiring 91-16b-1, the first wiring 91-16b-2, and the first wiring 91-16b-3 are formed in the same layer. The second wiring 92-16b-1, the second wiring 92-16b-2, and the first wiring 91-16b-1, and the first wiring 91-16b-2 may be transparent wiring, and since transparent wiring does not block light, it is possible to increase the wiring area by, for example, extending the wiring over the entire pixel.

[0324] The second insulating layer 7-16b is formed between the third electrodes 9-16b-1 and 9-16b-2 and the semiconductor substrate 300-16b.

[0325] In Fig. 16(b), the optical waveguides 400-16b-1 and 400-16b-2 are formed between the second wiring 92-16b-1, the second wiring 92-16b-2, the first wiring 91-16b-1, the first wiring 91-16b-2 and the semiconductor substrate 300-16b. The second wiring 92-16b-1, the second wiring 92-16b-2, the first wiring 91-16b-1, the first wiring 91-16b-2 are transparent wirings, so that the optical waveguides 400-16b-1 and 400-16b-2 can be formed below the second wiring 92-16b-1, the second wiring 92-16b-2, the first wiring 91-16b-1, the first wiring 91-16b-2 (the lower side in Fig. 16(b)) without blocking light.

[0326] The first photoelectric conversion section 100-16b is composed of a second carrier blocking layer 2-16b, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-16b, and a first carrier blocking layer 4-16b.

[0327] The first photoelectric conversion portion 100-16b is formed on one surface side (the light incident side, the upper side in FIG. 16(b)) of a semiconductor substrate 300-16b.

[0328] Please refer to Fig. 16(c). In Fig. 16(c), the solid-state imaging element 1000-15 includes at least shields 10-16c-1 to 10-16c-3, second electrodes 1-16c, third electrodes 9-16c-1 and 9-16c-2, a first photoelectric conversion section 100-16c, a semiconductor layer 5-16c, a first insulating layer 6-16c, a second insulating layer 7-16c, and optical waveguides 400-16c-1 and 400-16c-2. Transparent electrodes may be used for the third electrodes 9-16c-1 and 9-16c-2.

[0329] In the solid-state imaging element 1000-15, from the light incident side (the upper side in Figure 16 (c)), a protective layer 11-16c, a second electrode 1-16c, a first photoelectric conversion section 100-16c, a semiconductor layer 5-16c, shields 10-16c-1 to 10-16c-3, and optical waveguides 400-16c-1 and 400-16c-2 are arranged in this order.

[0330] The third electrodes 9-16c-1 and 9-16c-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-16c via the first insulating layer 6-16c. The third electrodes 9-16c-1 and 9-16c-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-16c-1 and 9-16c-2 and the shields 10-16c-1, 10-16c-2, and 10-16c-3 are formed in the same layer.

[0331] In Fig. 16(c), the third electrode 9-16c-1 is connected to the second wiring 92-16c-1 through a contact hole 92-16c-A-1, and the second wiring 92-16c-1 is connected to the first wiring 91-16c-1 through a contact hole 91-16c-A-1. The third electrode 9-16c-2 is connected to the second wiring 92-16c-2 through a contact hole 92-16c-A-2. The second wiring 92-16c-1 and the second wiring 92-16c-2 are formed in the same layer, and the first wiring 91-16c-1 and the first wiring 91-16c-2 are formed in the same layer. The second wiring 92-16c-1, the second wiring 92-16c-2, the first wiring 91-16c-1 and the first wiring 91-16c-2 may be transparent wiring, and since transparent wiring does not block light, the wiring area can be increased, for example, by extending it over the entire pixel.

[0332] The second insulating layer 7-16c is formed between the third electrodes 9-16c-1 and 9-16c-2 and the semiconductor substrate 300-16c.

[0333] In Fig. 16(c), the optical waveguides 400-16c-1 and 400-16c-2 are formed between the second wiring 92-16c-1, the second wiring 92-16c-2, the first wiring 91-16c-1 and the first wiring 91-16c-2 and the semiconductor substrate 300-16c. The second wiring 92-16c-1, the second wiring 92-16c-2, the first wiring 91-16c-1 and the first wiring 91-16c-2 are transparent wirings, so that the optical waveguides 400-16c-1 and 400-16c-2 can be formed below the second wiring 92-16c-1, the second wiring 92-16c-2, the first wiring 91-16c-1 and the first wiring 91-16c-2 (the lower side in Fig. 16(c)) without blocking light.

[0334] The first photoelectric conversion section 100-16c is composed of a second carrier blocking layer 2-16c, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-16c, and a first carrier blocking layer 4-16c.

[0335] The first photoelectric conversion portion 100-16c is formed on one surface side (the light incident side, the upper side in FIG. 16(c)) of the semiconductor substrate 300-16a.

[0336] 6. Sixth embodiment (sixth example of solid-state imaging device) A solid-state imaging element of a sixth embodiment of the present technology is a solid-state imaging element including at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion unit, a second photoelectric conversion unit, a first insulating layer, a second insulating layer, an optical waveguide, at least one pedestal connected to the first electrode and formed between the first electrode and the second photoelectric conversion unit, a via connecting the first electrode and the at least one pedestal, at least one wiring connected to the third electrode and formed between the third electrode and the second photoelectric conversion unit, and a contact hole connecting the third electrode and the at least one wiring. In the solid-state imaging device according to the sixth embodiment of the present technology, the second electrode, the first photoelectric conversion unit, and the first electrode are arranged in this order, the third electrode is formed apart from the first electrode and facing the first photoelectric conversion unit via the first insulating layer, the second insulating layer is formed between the third electrode and the second photoelectric conversion unit, and the optical waveguide is formed between the third electrode and the second photoelectric conversion unit. Furthermore, in the solid-state imaging device according to the sixth embodiment of the present technology, the first distance between the center of the second photoelectric conversion unit at the center of the angle of view and the center of the via is different from the second distance between the center of the second photoelectric conversion unit at the edge of the angle of view and the center of the via, and the third distance between the center of the second photoelectric conversion unit at the center of the angle of view and the center of the contact hole is different from the fourth distance between the center of the second photoelectric conversion unit at the edge of the angle of view and the center of the contact hole.

[0337] That is, the solid-state imaging element of the sixth embodiment of the present technology is a solid-state imaging element of the first embodiment of the present technology, further comprising: at least one pedestal connected to a first electrode and formed between the first electrode and a second photoelectric conversion unit; a via connecting the first electrode and the at least one pedestal; at least one wiring connected to a third electrode and formed between the third electrode and the second photoelectric conversion unit; and a contact hole connecting the third electrode and the at least one wiring, wherein a first distance between the center of the second photoelectric conversion unit at the center of the angle of view and the center of the via is different from a second distance between the center of the second photoelectric conversion unit at the edge of the angle of view and the center of the via, a third distance between the center of the second photoelectric conversion unit at the center of the angle of view and the center of the contact hole, and a fourth distance between the center of the second photoelectric conversion unit at the edge of the angle of view and the center of the contact hole are different.

[0338] The solid-state imaging element 1000-17 has a structure that takes pupil correction into consideration. Light enters the on-chip lens at various angles relative to the imaging surface. Therefore, if the pixels at the center and edges of the field of view have the same structure, light cannot be collected efficiently, and a difference in sensitivity may occur between the pixels at the center and edges of the field of view.

[0339] In pixels arranged in the center of the angle of view, incident light is incident approximately perpendicularly to the second photoelectric conversion unit (e.g., a photodiode), whereas in pixels arranged in the edge of the angle of view, incident light is incident on the second photoelectric conversion unit from an oblique direction.

[0340] Therefore, pupil correction is applied to the on-chip lens so that it can efficiently collect oblique light as well. The amount of pupil correction increases from the center of the angle of view (for example, the center of the pixel unit) toward the edge of the angle of view. In other words, there is no need to perform pupil correction on the pixel at the center of the angle of view.

[0341] Since the solid-state imaging element 1000-17 has an optical waveguide, it can guide the progression of light downward, i.e., toward the second photoelectric conversion element, and therefore the amount of pupil correction can be made smaller than in a solid-state imaging element that does not have an optical waveguide.

[0342] A solid-state imaging element 1000-17 according to a sixth embodiment of the present technology will be described with reference to Fig. 17. Fig. 17(a) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-17 for the first seat 81-18a, via 81-18a-A, first wiring 91-19b-1, contact hole 91-19a-A-1, etc., which are in the same layer, as shown in Figs. 18 and 19. Fig. 17(b) is a diagram showing a planar layout of four pixels of the solid-state imaging element 1000-17 for the second seat 82-18a, via 82-18a-A, second wiring 92-19b-1, contact hole 92-19a-A-1, etc., which are in the same layer, as shown in Figs. 18 and 19. FIG. 17C is a diagram showing a planar layout of four pixels of a solid-state imaging element 1000-17 for the first electrode 8-18a, the shield 10-18a-1, the third electrode 9-19a-1, etc., which are in the same layer shown in FIGS.

[0343] Please refer to Fig. 17(a). Fig. 17(a) shows four pixels 1000-17a-1 to 1000-17a-4 of the solid-state imaging device 1000-17.

[0344] A first wiring 91-17a-12 is formed on the upper part of the pixel 1000-17a-1 and the pixel 1000-17a-2 (upper side in FIG. 17(a)). In the pixel 1000-17a-2, the first wiring 91-17a-12, the first wiring 91-17a-2-2, and the first wiring 91-17a-1-2 are connected. A contact hole 91-17a-2-A-2 is connected to the first wiring 91-17a-2-2. The first wiring 91-17a-1-2 may have a large wiring area so that the contact hole 91-17a-2-A-2 does not step over as a structure taking into consideration pupil correction.

[0345] A first wiring 91-17a-34 is formed under the pixels 1000-17a-3 and 1000-17a-4 (lower side in FIG. 17(a)). In the pixel 1000-17a-3, the first wiring 91-17a-34, the first wiring 91-17a-2-3, and the first wiring 91-17a-1-3 are connected. A contact hole 91-17a-2-A-3 is connected to the first wiring 91-17a-2-3. The first wiring 91-17a-1-3 may have a large wiring area so that the contact hole 91-17a-2-A-3 does not step over as a structure taking into consideration pupil correction.

[0346] This allows the pixel 1000-17a-2 to be driven by the first wiring 91-17a-12 and the first wiring 91-17a-2-2, and the pixel 1000-17a-3 to be driven by the first wiring 91-17a-34 and the first wiring 91-17a-2-3. That is, the two pixels (pixel 1000-17a-2 and pixel 1000-17a-3) can be driven separately and independently.

[0347] The first seat 81-17a and the via 81-17a-A connected to the first seat 81-17a are formed to share four pixels (1000-17a-1 to 1000-17a-4). The first seat 81-17a is a structure that takes pupil correction into consideration, and the wiring area may be made large so that the via 81-17a-A does not step over.

[0348] Please refer to Fig. 17(b). Fig. 17(b) shows four pixels 1000-17b-1 to 1000-17b-4 of the solid-state imaging device 1000-17.

[0349] A second wiring 92-17b-12 is formed on the upper part of the pixel 1000-17b-1 and the pixel 1000-17b-2 (upper side in FIG. 15(b)). In the pixel 1000-17b-1, the second wiring 92-17b-12, the second wiring 92-17b-2-1, and the second wiring 92-17b-1-1 are connected. The second wiring 92-17b-2-1 is connected to a contact hole 92-17b-2-A-1. In the pixel 1000-17b-2, the second wiring 92-17b-2 is connected to the first wiring (not shown) through a contact hole 92-17b-A-2. The second wiring 92-17b-1-1 may have a large wiring area so as not to step over the contact hole 91-17b-2-A-1 as a structure taking into consideration pupil correction. Furthermore, the second wiring 92-17b-2 may have a structure that takes pupil correction into consideration, and the wiring area may be increased so as not to step over the contact hole 91-17b-2-A-2.

[0350] A second wiring 92-17b-34 is formed under the pixels 1000-17b-3 and 1000-17b-4 (lower side in FIG. 17(b)). In the pixel 1000-17b-4, the second wiring 92-17b-34, the second wiring 92-17b-2-4, and the second wiring 92-17b-1-4 are connected. The second wiring 92-17b-2-4 is connected to a contact hole 92-17b-2-A-4. In the pixel 1000-17b-3, the second wiring 92-17b-3 is connected to the first wiring (not shown) through a contact hole 92-17b-A-3. The second wiring 92-17b-1-4 may have a large wiring area so as not to step over the contact hole 91-17b-2-A-4 as a structure that takes pupil correction into consideration. Furthermore, the second wiring 92-17b-3 may have a structure that takes pupil correction into consideration, and the wiring area may be made large so as not to step over the contact hole 91-17b-A-3.

[0351] This allows the pixel 1000-17b-1 to be driven by the second wiring 92-17b-12 and the second wiring 92-17b-2-1, and the pixel 1000-17b-4 to be driven by the second wiring 92-17b-34 and the second wiring 92-17b-2-4. That is, the two pixels (pixel 1000-17b-1 and pixel 1000-17b-4) can be driven separately and independently.

[0352] The second seat 82-17b and the via 82-17b-A connected to the second seat 82-17b are formed to share four pixels (1000-17b-1 to 1000-17b-4). The second seat 81-17b has a structure that takes pupil correction into consideration, and the wiring area may be made large so that the via 81-17b-A does not step over.

[0353] Please refer to Fig. 17(c). Fig. 17(c) shows four pixels 1000-17c-1 to 1000-17c-4 of the solid-state imaging device 1000-17.

[0354] A third electrode 9-17c-1 and a second wiring 92-17c-2-1 (second wiring 92-17c-1-1) are formed in pixel 1000-17c-1, and the third electrode 9-17c-1 and the second wiring 92-17c-2-1 (second wiring 92-17c-1-1) are connected via a contact hole 92-17c-2-A-1. In pixel 1000-17c-2, a third electrode 9-17c-2, a first wiring 91-17c-2-2 and a second wiring 92-17c-2 are formed, and the first wiring 91-17c-2-2 and the second wiring 92-17c-2 are connected via a contact hole 91-17c-2-A-2, and the third electrode 9-17c-2 and the second wiring 92-17c-2 are connected via a contact hole 92-17c-2-A-2. In pixel 1000-17c-3, a third electrode 9-17c-3, a first wiring 91-17c-2-3 and a second wiring 92-17c-3 are formed, and the first wiring 91-17c-2-3 and the second wiring 92-17c-3 are connected via a contact hole 91-17c-2-A-3, and the third electrode 9-17c-3 and the second wiring 92-17c-3 are connected via a contact hole 92-17c-2-A-3. A third electrode 9-17c-4 and a second wiring 92-17c-2-4 (second wiring 92-17c-1-4) are formed in pixel 1000-17c-4, and the third electrode 9-17c-4 and the second wiring 92-17c-2-4 (second wiring 92-17c-1-4) are connected via a contact hole 92-17c-2-A-4.

[0355] A second wiring 92-17c-12 (first wiring 91-17c-12) is formed in order from the light incident side above the pixels 1000-17c-1 and 1000-17c-2 (upper side in FIG. 17(c)). In the pixel 1000-17c-1, the second wiring 92-17c-12 and the second wiring 92-17c-1 are connected, and in the pixel 1000-17c-2, the first wiring 91-17c-12 and the first wiring 91-17c-2 are connected.

[0356] A second wiring 92-17c-34 (first wiring 91-17c-34) is formed in order from the light incident side under the pixels 1000-17c-3 and 1000-17c-4 (lower side in FIG. 17(c)). In the pixel 1000-17c-3, the first wiring 91-17c-34 and the first wiring 91-17c-3 are connected, and in the pixel 1000-17c-4, the second wiring 92-17c-34 and the second wiring 92-17c-4 are connected.

[0357] As a result, the pixel 1000-17c-2 can be driven by the first wiring 91-17c-12 and the first wiring 91-17c-2-2, and the pixel 1000-17c-3 can be driven by the first wiring 91-17c-34 and the first wiring 91-17c-2-3. The pixel 1000-17c-1 can be driven by the second wiring 92-17c-12 and the second wiring 92-17c-2-1, and the pixel 1000-3-4 can be driven by the second wiring 92-17c-34 and the second wiring 92-17c-2-4. That is, the four pixels (pixels 1000-17c-1 to 1000-17c-4) can be driven independently.

[0358] The first electrode 8-17c is formed to share four pixels (1000-17c-1 to 1000-17c-4), and in order from the light incident side, the first electrode is connected to the second seat 82-17c via a via 82-17c-A, and the second seat 82-17c is connected to the first seat 81-17c via a via 81-17c-A.

[0359] A solid-state imaging element 1000-17 according to a sixth embodiment of the present technology will be described with reference to Fig. 18. Fig. 18(a) is a cross-sectional view of the solid-state imaging element 1000-17 at the center of the angle of view taken along line A-A' shown in Fig. 17(c), and Fig. 18(b) is a cross-sectional view of the solid-state imaging element 1000-17 at the right end of the angle of view taken along line A-A' shown in Fig. 17(c).

[0360] Referring to Fig. 18(a), a solid-state imaging element 1000-17 includes at least a first electrode 8-18a, a second electrode 1-18a, a first photoelectric conversion unit 100-18a, a semiconductor layer 5-18a, a first insulating layer 6-18a, and a second insulating layer 7-18a. A transparent electrode may be used for the first electrode 8-18a.

[0361] In the solid-state imaging device 1000-17, a protective layer 11-18a, a second electrode 1-18a, a first photoelectric conversion unit 100-18a, a semiconductor layer 5-18a, and a first electrode 8-18a are arranged in this order from the light incident side (the upper side in FIG. 18(a)). The first electrode 8-18a and the two shields 10-18a-1 and 10-18a-2 are formed in the same layer.

[0362] In FIG. 18(a), the first electrode 8-18a is connected to the second seat 82-18a via a via 82-18a-A, the second seat 82-18a is connected to the first seat 81-18a via a via 81-18a-A, and the first seat 81-18a is further connected to a through electrode 89-18a.

[0363] The first photoelectric conversion section 100-18a is composed of a second carrier blocking layer 2-18a, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-18a, and a first carrier blocking layer 4-18a.

[0364] The first photoelectric conversion portion 100-18a is formed on one surface side (the light incident side, the upper side in FIG. 18(a)) of a semiconductor substrate 300-18a.

[0365] Referring to Fig. 18(b), the solid-state imaging element 1000-17 includes at least a first electrode 8-18b, a second electrode 1-18b, a first photoelectric conversion unit 100-18b, a semiconductor layer 5-18b, a first insulating layer 6-18b, and a second insulating layer 7-18b. A transparent electrode may be used for the first electrode 8-18b.

[0366] In the solid-state imaging element 1000-17, a protective layer 11-18b, a second electrode 1-18b, a first photoelectric conversion unit 100-18b, a semiconductor layer 5-18b, and a first electrode 8-18b are arranged in this order from the light incident side (the upper side in FIG. 18(b)). The first electrode 8-18b and the two shields 10-18b-1 and 10-18b-2 are formed in the same layer.

[0367] In FIG. 18(b), the first electrode 8-18b is connected to the second seat 82-18b via a via 82-18b-A, the second seat 82-18b is connected to the first seat 81-18b via a via 81-18b-A, and the first seat 81-18b is further connected to a through electrode 89-18b.

[0368] The first photoelectric conversion section 100-18b is composed of a second carrier blocking layer 2-18b, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-18b, and a first carrier blocking layer 4-18b.

[0369] The first photoelectric conversion portion 100-18b is formed on one surface side (the light incident side, the upper side in FIG. 18(b)) of a semiconductor substrate 300-18b.

[0370] As shown in Fig. 18(a) and Fig. 18(b), in a solid-state imaging element 1000-17 according to a sixth embodiment of the present technology, a first distance between the center of the second photoelectric conversion unit (not shown) at the center of the angle of view (center of the angle of view) (Fig. 18(a)) and the center of the via 82-18a-A is different from a second distance between the center of the second photoelectric conversion unit (not shown) at the right end of the angle of view (end of the angle of view) (Fig. 18(b)) and the center of the via 82-18b-A. At least the vias 82-18a-A and 82-18b-A are movable so that their positions can be changed according to pupil correction. The vias 81-18a-A, the vias 81-18b-A, the second seat 82-18a, the second seat 82-18b, the first seat 81-18a, or the first seat 81-18b may also be movable so that their positions can be changed according to pupil correction. As described above, although the second photoelectric conversion unit is not shown in FIGS. 18(a) and 18(b), it is embedded in the semiconductor substrate 300-18a or 300-18b and is not movable.

[0371] A solid-state imaging element 1000-17 according to a sixth embodiment of the present technology will be described with reference to Fig. 19. Fig. 19(a) is a cross-sectional view of the solid-state imaging element 1000-17 at the center of the angle of view taken along line CC' shown in Fig. 17(c), and Fig. 19(b) is a cross-sectional view of the solid-state imaging element 1000-17 at the right end of the angle of view taken along line CC' shown in Fig. 17(c).

[0372] Please refer to Fig. 19(a). In Fig. 19(a), the solid-state imaging element 1000-17 includes at least shields 10-19a-1 to 10-19a-3, a second electrode 1-19a, third electrodes 9-19a-1 and 9-19a-2, a first photoelectric conversion section 100-19a, a semiconductor layer 5-19a, a first insulating layer 6-19a, a second insulating layer 7-19a, and an optical waveguide (not shown in Fig. 19(a)). Transparent electrodes may be used for the third electrodes 9-19a-1 and 9-19a-2.

[0373] In the solid-state imaging element 1000-17, from the light incident side (the upper side in FIG. 19(a)), a protective layer 11-19a, a second electrode 1-19a, a first photoelectric conversion section 100-19a, a semiconductor layer 5-19a, and shields 10-19a-1 to 10-19a-3 are arranged in this order.

[0374] The third electrodes 9-19a-1 and 9-19a-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-19a via the first insulating layer 6-19a. The third electrodes 9-19a-1 and 9-19a-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-19a-1 and 9-19a-2 and the shields 10-19a-1, 10-19a-2, and 10-19a-3 are formed in the same layer.

[0375] In Fig. 19(a), the third electrode 9-19a-1 is connected to the second wiring 92-19a-1 through a contact hole 92-19a-A-1, and the second wiring 92-19a-1 is connected to the first wiring 91-19a-1 through a contact hole 91-19a-A-1. The third electrode 9-19a-2 is connected to the second wiring 92-19a-2 through a contact hole 92-19a-A-2. The second wiring 92-19a-1 and the second wiring 92-19a-2 are formed in the same layer.

[0376] The second insulating layer 7-19a is formed between the third electrodes 9-19a-1 and 9-19a-2 and the semiconductor substrate 300-19a.

[0377] Although the optical waveguide is not shown in FIG. 19(a), the optical waveguide may be formed between the third electrodes 9-19a-1 and 9-19a-2 and the semiconductor substrate 300-19a.

[0378] The first photoelectric conversion section 100-19a is composed of a second carrier blocking layer 2-19a, a photoelectric conversion layer (eg, an organic photoelectric conversion layer) 3-19a, and a first carrier blocking layer 4-19a.

[0379] The first photoelectric conversion portion 100-19a is formed on one surface side (the light incident side, the upper side in FIG. 19(a)) of a semiconductor substrate 300-19a.

[0380] Please refer to Fig. 19(b). In Fig. 19(b), the solid-state imaging element 1000-17 includes at least shields 10-19b-1 to 10-19b-3, second electrodes 1-19b, third electrodes 9-19b-1 and 9-19b-2, a first photoelectric conversion section 100-19b, a semiconductor layer 5-19b, a first insulating layer 6-19b, a second insulating layer 7-19b, and an optical waveguide (not shown in Fig. 19(b)). Transparent electrodes may be used for the third electrodes 9-19b-1 and 9-19b-2.

[0381] In the solid-state imaging element 1000-17, from the light incident side (the upper side in FIG. 19(b)), a protective layer 11-19b, a second electrode 1-19b, a first photoelectric conversion section 100-19b, a semiconductor layer 5-19b, and shields 10-19b-1 to 10-19b-3 are arranged in this order.

[0382] The third electrodes 9-19b-1 and 9-19b-2 are formed apart from the first electrode (not shown) and are formed facing the first photoelectric conversion unit 100-19b via the first insulating layer 6-19b. The third electrodes 9-19b-1 and 9-19b-2 are charge storage electrodes similar to the third electrodes 9-1-1 and 9-1-2 in Fig. 1. The third electrodes 9-19b-1 and 9-19b-2 and the shields 10-19b-1, 10-19b-2, and 10-19b-3 are formed in the same layer.

[0383] In Fig. 19(b), the third electrode 9-19b-1 is connected to the second wiring 92-19b-1 through a contact hole 92-19b-A-1, and the second wiring 92-19b-1 is connected to the first wiring 91-19b-1 through a contact hole 91-19b-A-1. The third electrode 9-19b-2 is connected to the second wiring 92-19b-2 through a contact hole 92-19b-A-2. The second wiring 92-19b-1 and the second wiring 92-19b-2 are formed in the same layer.

[0384] The second insulating layer 7-19b is formed between the third electrodes 9-19b-1 and 9-19b-2 and the semiconductor substrate 300-19b.

[0385] Although the optical waveguide is not shown in FIG. 19(b), the optical waveguide may be formed between the third electrodes 9-19b-1 and 9-19b-2 and the semiconductor substrate 300-19b.

[0386] The first photoelectric conversion section 100-19b is composed of a second carrier blocking layer 2-19b, a photoelectric conversion layer (for example, an organic photoelectric conversion layer) 3-19b, and a first carrier blocking layer 4-19b.

[0387] The first photoelectric conversion portion 100-19b is formed on one surface side (light incident side, the upper side in FIG. 19(b)) of a semiconductor substrate 300-19b.

[0388] 19(a) and 19(b), in a solid-state imaging element 1000-17 according to a sixth embodiment of the present technology, a third distance between the center of the second photoelectric conversion unit (not shown) at the center of the angle of view (center of the angle of view) (FIG. 19(a)) and the center of the contact hole 92-19a-A-1 is different from a fourth distance between the center of the second photoelectric conversion unit (not shown) at the right end of the angle of view (end of the angle of view) (FIG. 19(b)) and the center of the contact hole 92-19b-A-1. At least the contact holes 92-19a-A-1 and the contact holes 92-19b-A-1 are movable so that their positions can be changed according to pupil correction. The contact hole 91-19a-A-1, the contact hole 91-19b-A-1, the second wiring 92-19a-1, the second wiring 92-19b-1, the first wiring 91-19a-1 or the first wiring 91-19b-1 may also be movable so that their positions can be changed according to pupil correction. As described above, the second photoelectric conversion unit is not shown in Figures 19(a) and 19(b), but is embedded in the semiconductor substrate 300-19a or 300-19b and is not movable.

[0389] 7. Seventh embodiment (example of electronic device) An electronic device according to a seventh embodiment of the present technology is an electronic device having a solid-state imaging element mounted thereon, the solid-state imaging element including at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, and an optical waveguide, the second electrode, the first photoelectric conversion section, and the first electrode being arranged in this order, the third electrode being spaced apart from the first electrode and facing the first photoelectric conversion section via the first insulating layer, the second insulating layer being formed between the third electrode and the second photoelectric conversion section, and the optical waveguide being formed between the third electrode and the second photoelectric conversion section. The electronic device according to the seventh embodiment of the present technology may also be an electronic device having a solid-state imaging element according to any one of the first to sixth embodiments of the present technology mounted thereon.

[0390] <8. Examples of use of solid-state imaging devices using this technology> FIG. 20 is a diagram showing an example of using the solid-state imaging elements according to the first to sixth embodiments of the present technology as an image sensor.

[0391] The solid-state imaging elements of the first to sixth embodiments described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-rays, for example, as described below. That is, as shown in Fig. 20, the solid-state imaging element of any one of the first to sixth embodiments can be used in a device (for example, the electronic device of the seventh embodiment described above) used in the field of appreciation for capturing images for appreciation, the field of transportation, the field of home appliances, the field of medicine and health care, the field of security, the field of beauty, the field of sports, the field of agriculture, and the like.

[0392] Specifically, in the field of appreciation, the solid-state imaging element of any one of the first to sixth embodiments can be used in devices for capturing images for appreciation, such as digital cameras, smartphones, and mobile phones with camera functions.

[0393] In the field of transportation, for example, the solid-state imaging element of any one of the first to sixth embodiments can be used in devices used for traffic purposes, such as in-vehicle sensors that capture images of the front and rear of a car, the surroundings, and the interior of the car for safe driving such as automatic stopping, and for recognizing the driver's condition, surveillance cameras that monitor moving vehicles and roads, and distance measuring sensors that measure distances between vehicles, etc.

[0394] In the field of home appliances, for example, the solid-state imaging element of any one of the first to sixth embodiments can be used in a device provided in home appliances such as a television receiver, a refrigerator, or an air conditioner to capture an image of a user's gesture and operate the appliance in accordance with the gesture.

[0395] In the field of medicine and healthcare, the solid-state imaging element of any one of the first to sixth embodiments can be used in devices used for medical or healthcare purposes, such as endoscopes and devices that perform angiography by receiving infrared light.

[0396] In the field of security, the solid-state imaging element according to any one of the first to sixth embodiments can be used in devices used for security purposes, such as surveillance cameras for crime prevention and cameras for person authentication.

[0397] In the field of cosmetics, the solid-state imaging element according to any one of the first to sixth embodiments can be used in devices used for cosmetics, such as a skin measuring device that photographs the skin or a microscope that photographs the scalp.

[0398] In the field of sports, the solid-state imaging device according to any one of the first to sixth embodiments can be used in devices for sports, such as action cameras and wearable cameras for sports applications.

[0399] In the agricultural field, for example, the solid-state imaging device according to any one of the first to sixth embodiments can be used in devices used for agricultural purposes, such as cameras for monitoring the conditions of fields and crops.

[0400] Next, examples of use of the solid-state imaging elements according to the first to sixth embodiments of the present technology will be specifically described. For example, the solid-state imaging element 101 described above can be applied to any type of electronic device having an imaging function, such as a camera system such as a digital still camera or a video camera, or a mobile phone having an imaging function. FIG. 21 shows a schematic configuration of an electronic device 102 (camera) as an example. The electronic device 102 is, for example, a video camera capable of taking still or moving images, and includes the solid-state imaging element 101, an optical system (optical lens) 310, a shutter device 311, a drive unit 313 for driving the solid-state imaging element 101 and the shutter device 311, and a signal processing unit 312.

[0401] The optical system 310 guides image light (incident light) from a subject to the pixel section 101a of the solid-state imaging element 101. The optical system 310 may be composed of a plurality of optical lenses. The shutter device 311 controls the light irradiation period and the light blocking period of the solid-state imaging element 101. The drive section 313 controls the transfer operation of the solid-state imaging element 101 and the shutter operation of the shutter device 311. The signal processing section 312 performs various signal processing on the signal output from the solid-state imaging element 101. The video signal Dout after the signal processing is stored in a storage medium such as a memory, or is output to a monitor or the like.

[0402] Note that the embodiments according to the present technology are not limited to the above-described embodiments, and various modifications are possible without departing from the gist of the present technology.

[0403] Furthermore, the effects described in this specification are merely examples and are not limiting, and other effects may also be obtained.

[0404] The present technology can also be configured as follows. [1] at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, and an optical waveguide; the second electrode, the first photoelectric conversion unit, and the first electrode are arranged in this order; the third electrode is formed to be spaced apart from the first electrode and to face the first photoelectric conversion unit with the first insulating layer interposed therebetween; the second insulating layer is formed between the third electrode and the second photoelectric conversion unit, The optical waveguide is formed between the third electrode and the second photoelectric conversion portion. [2] Further comprising at least one semiconductor layer; The solid-state imaging element according to [1], wherein the at least one semiconductor layer is disposed between the first photoelectric conversion section and the first insulating layer. [3] The solid-state imaging element according to [1] or [2], wherein the optical waveguide and the second insulating layer are separated in a substantially vertical direction. [4] Further comprising a low dielectric constant material containing layer; The solid-state imaging element according to any one of [1] to [3], wherein the low dielectric constant material containing layer is disposed below the optical waveguide and above the second photoelectric conversion section. [5] It also has an inner lens, The solid-state imaging element according to any one of [1] to [4], wherein the inner lens is disposed between the first photoelectric conversion section and the optical waveguide. [6] The solid-state imaging element according to any one of [1] to [5], wherein the refractive index of the optical waveguide is greater than the refractive index of the second insulating layer. [7] The solid-state imaging device according to any one of [1] to [6], wherein the optical waveguide contains SiN. [8] The solid-state imaging element according to any one of [1] to [6], wherein the optical waveguide contains siloxane. [9] The solid-state imaging device according to any one of [1] to [6], wherein the optical waveguide includes ITO.

[10] at least one wiring connected to the third electrode; the at least one trace comprises a transparent material; The solid-state imaging element according to any one of [1] to [9], wherein the at least one wiring and the optical waveguide are arranged in this order from the light incident side.

[11] at least one wiring connected to the third electrode; the at least one trace comprises a light blocking material; The solid-state imaging element according to any one of [1] to [9], wherein the at least one wiring and the optical waveguide are separated via the second insulating layer.

[12] At least one seat connected to the first electrode and formed between the first electrode and the second photoelectric conversion unit; a via connecting the first electrode and the at least one pedestal; a first distance between a center of the second photoelectric conversion unit at the center of the angle of view and a center of the via is different from a second distance between a center of the second photoelectric conversion unit at an end of the angle of view and a center of the via, At least one wiring connected to the third electrode and formed between the third electrode and the second photoelectric conversion unit; a contact hole connecting the third electrode and the at least one wiring; A solid-state imaging element described in any one of [1] to

[11] , wherein a third distance between the center of the second photoelectric conversion unit at the center of the field of view and the center of the contact hole is different from a fourth distance between the center of the second photoelectric conversion unit at the end of the field of view and the center of the contact hole.

[13] Equipped with a solid-state imaging element, the solid-state imaging element includes at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, and an optical waveguide; the second electrode, the first photoelectric conversion unit, and the first electrode are arranged in this order; the third electrode is formed to be spaced apart from the first electrode and to face the first photoelectric conversion unit with the first insulating layer interposed therebetween; the second insulating layer is formed between the third electrode and the second photoelectric conversion unit, The optical waveguide is formed between the third electrode and the second photoelectric conversion portion.

[14] An electronic device including the solid-state imaging device according to any one of [2] to

[12] . [Explanation of symbols]

[0405] 1000 (1000-1 to 1000-17)... solid-state imaging element, 1... second electrode, 6... first insulating layer, 7... second insulating layer, 8... first electrode, 9... third electrode, 100... first photoelectric conversion section, 200... second photoelectric conversion section, 400... optical waveguide

Claims

1. at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion unit, a second photoelectric conversion unit, a first insulating layer, a second insulating layer, and an optical waveguide; the second electrode, the first photoelectric conversion unit, and the first electrode are arranged in this order; the third electrode is formed to be spaced apart from the first electrode and to face the first photoelectric conversion unit via the first insulating layer; the second insulating layer is formed between the third electrode and the second photoelectric conversion unit, the optical waveguide is formed between the third electrode and the second photoelectric conversion unit, at least one wiring connected to the third electrode; the at least one wiring and the third electrode are transparent; the at least one wiring is sandwiched between the third electrode and at least a portion of the optical waveguide.

2. The solid-state imaging device according to claim 1 , wherein the at least one wiring is sandwiched between the third electrode and the optical waveguide.

3. The solid-state imaging device according to claim 1 , wherein the at least one wiring is a plurality of wirings.

4. Equipped with a solid-state imaging element, The solid-state imaging device includes at least a first electrode, a second electrode, a third electrode, and a first photoelectric conversion element. a first photoelectric conversion section, a second photoelectric conversion section, a first insulating layer, a second insulating layer, and an optical waveguide, the second electrode, the first photoelectric conversion unit, and the first electrode are arranged in this order; the third electrode is formed to be spaced apart from the first electrode and to face the first photoelectric conversion unit via the first insulating layer; the second insulating layer is formed between the third electrode and the second photoelectric conversion unit, the optical waveguide is formed between the third electrode and the second photoelectric conversion unit, at least one wiring connected to the third electrode; the at least one wiring and the third electrode are transparent; The at least one wiring is sandwiched between the third electrode and at least a portion of the optical waveguide.

Images