Electron beam irradiation device and electron beam irradiation method

Abstract

PURPOSE: To provide a device capable of reducing the arrival of transmitted light on a sample surface in electron beam irradiation.CONSTITUTION: An electron beam irradiation device according to the present invention includes a photoelectric surface 210 that receives excitation light on the front surface side and generates a plurality of electron beams from the back surface side, a blanking aperture array mechanism 204 in which a passage hole corresponding to each of the plurality of electron beams is formed and the deflection control of each of the plurality of electron beams passing through the passage holes is controlled, a limiting aperture substrate 206 through which an opening is formed to limit the passage of the plurality of electron beams, an XY stage 105 on which a sample irradiated with the plurality of electron beams that have passed through the blanking aperture array mechanism and the aperture substrate can be placed, and an adjustment mechanism 162 that adjusts at least one of the orbital of transmitted light that passes through an arrangement including the photoelectric surface to the stage, the blanking aperture array mechanism, and the limiting aperture substrate and reaches the stage, and the orbital of the plurality of electron beams in the irradiated excitation light, and the arrangement shields at least a part of the transmitted light.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] 1. Field of the Invention One aspect of the present invention relates to an electron beam irradiation apparatus and an electron beam irradiation method, for example, to a multi-electron beam lithography apparatus and a multi-electron beam lithography method. [Background technology]

[0002] Lithography technology, which is responsible for the advancement of miniaturization of semiconductor devices, is the only extremely important process in the semiconductor manufacturing process that generates patterns. In recent years, with the increasing integration of LSIs, the circuit line width required for semiconductor devices has become finer year by year. Here, electron beam (EB) drawing technology has inherently excellent resolution, and mask patterns are drawn on mask blanks using electron beams.

[0003] For example, there is a lithography device that uses multiple beams. Compared to lithography using a single electron beam, the use of multiple beams allows many beams to be irradiated at once, greatly improving throughput. In such a lithography device using the multi-beam method, for example, an electron beam emitted from an electron gun is passed through a mask with multiple holes to form multiple beams, each of which is blanked and each beam that is not blocked by the limiting aperture is reduced in size by the optical system, the mask image is reduced, and the beam is deflected by a deflector to be irradiated at the desired position on the sample.

[0004] A technology has been considered for forming an electron beam source by irradiating the surface of a photocathode with laser light and emitting electrons from the back surface (see, for example, Patent Document 1). The film thickness of the photocathode used in this technology is very thin, and the irradiated laser light passes through the photocathode. This causes a problem in that the transmitted light reaches the sample separately from the electron beam and exposes the resist on the sample. If the resist on the sample is exposed, it will affect the drawing accuracy. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2003-511855 Summary of the Invention [Problem to be solved by the invention]

[0006] One aspect of the present invention provides an apparatus and method capable of reducing the amount of transmitted light reaching a sample surface in electron beam irradiation. [Means for solving the problem]

[0007] An electron beam irradiation apparatus according to one aspect of the present invention comprises: a photocathode that is irradiated with excitation light on its front side and generates a plurality of electron beams from its back side; a blanking aperture array mechanism in which passage holes corresponding to each of the plurality of electron beams are formed and which controls the deflection of each of the plurality of electron beams passing through the passage holes; a limiting aperture substrate having openings formed therein and limiting passage of the plurality of electron beams; a stage on which a sample can be placed, the sample being irradiated with a plurality of electron beams that have passed through a blanking aperture array mechanism and a limiting aperture substrate; The arrangement including the photocathode, blanking aperture array mechanism, and limiting aperture substrate up to the stage is selected as the irradiated excitation light. Pass through an adjustment mechanism for adjusting at least one of the trajectory of the transmitted light and the trajectories of the plurality of electron beams; The arrangement is characterized in that it blocks at least a portion of the transmitted light.

[0008] The adjustment mechanism preferably has an excitation light adjustment mechanism that adjusts the incidence conditions of excitation light incident on the photocathode.

[0009] Also, The adjustment mechanism includes: It is preferable to have a drive mechanism for moving the position of at least one of the objects.

[0010] Furthermore, it is preferable that the adjustment mechanism first deflects the plurality of electron beams at a predetermined angle, and then deflects them at the above-mentioned predetermined angle in the opposite direction to move the central axes of the orbits of the plurality of electron beams in parallel.

[0011] An electron beam irradiation method according to one aspect of the present invention includes the steps of: a step of irradiating a front side of a photocathode with excitation light and emitting a plurality of electron beams from a rear side of the photocathode; a step of adjusting at least one of a trajectory of transmitted light passing through an arrangement including a photocathode, a blanking aperture array mechanism for controlling the deflection of each of the plurality of electron beams, and a limiting aperture substrate having openings formed therein and limiting the passage of the plurality of electron beams, out of the irradiated excitation light, and a trajectory of the plurality of electron beams; Blocking at least a portion of the transmitted light with an arrangement; The plurality of electron beams sample and The present invention is characterized by comprising:

[0012] In the adjustment step, it is preferable to adjust the conditions under which excitation light is incident on the photocathode.

[0013] It is also preferable to include a step of moving the position of at least one of the objects.

[0014] It is also preferable to deflect the plurality of electron beams at a predetermined angle, and then deflect them at the above-mentioned predetermined angle in the opposite direction to move the central axes of the orbits of the plurality of electron beams in parallel. Effect of the Invention

[0015] According to one aspect of the present invention, in electron beam irradiation, the amount of transmitted light reaching a sample surface can be reduced. [Brief description of the drawings]

[0016] [Figure 1] FIG. 1 is a conceptual diagram showing a configuration of a drawing device in a first embodiment. [Diagram 2]2 is a conceptual diagram showing a configuration of a shaping aperture array substrate in the first embodiment. FIG. [Diagram 3] 2 is a cross-sectional view showing a configuration of a blanking aperture array mechanism in the first embodiment. FIG. [Figure 4] FIG. 2 is a diagram for explaining transmitted light in the first embodiment. [Diagram 5] FIG. 4 is a diagram for explaining a method for adjusting the intensity of transmitted light in the first embodiment. [Figure 6] 2 is a block diagram showing an example of an internal configuration of an adjustment circuit according to the first embodiment. FIG. [Figure 7] FIG. 2 is a flow chart showing some of the main steps of the writing method according to the first embodiment. [Figure 8] FIG. 2 is a diagram for explaining the laser light incident angle in the first embodiment. [Figure 9] FIG. 11 is a flowchart showing another part of the main steps of the writing method in the first embodiment. [Figure 10] FIG. 2 is a diagram for explaining a laser beam convergence angle in the first embodiment. [Figure 11] FIG. 11 is a flowchart showing another part of the main steps of the writing method in the first embodiment. [Figure 12] FIG. 11 is a flowchart showing another part of the main steps of the writing method in the first embodiment. [Figure 13] FIG. 11 is a flowchart showing another part of the main steps of the writing method in the first embodiment. [Figure 14] FIG. 4 is a diagram for explaining the relationship between transmitted laser light intensity and each adjustment item in the first embodiment. [Figure 15] FIG. 11 is a flowchart showing the remaining main steps of the writing method in the first embodiment. [Figure 16] FIG. 11 is a conceptual diagram showing a configuration of a drawing device in the second embodiment. [Figure 17] FIG. 11 is a conceptual diagram showing a configuration of a drawing device in the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] In the following, in the embodiment, a case where multiple photoelectron beams are irradiated will be described. However, the electron beam is not limited to multiple beams, and may be a single beam. In addition, a drawing device will be described as an example of an electron beam irradiation device.

[0018] Embodiment 1 FIG. 1 is a conceptual diagram showing a configuration of a drawing apparatus in the first embodiment. In FIG. 1, the drawing apparatus 100 includes a drawing mechanism 150 and a control circuit 160. The drawing apparatus 100 is an example of a multi-electron beam drawing apparatus. In the drawing mechanism 150, a laser light source 201 as an excitation light source, a laser light adjustment mechanism 238, and an illumination optical system 202 such as a beam expander are arranged in a lens barrel 104. The excitation light source may be not only a laser light source but also an appropriate light source such as an LED or a lamp. In the drawing mechanism 150, a photoelectron emission mechanism 210, a multi-anode electrode 220, a shaping aperture array substrate 203, a blanking aperture array substrate 204, an electromagnetic lens 205, a first limiting aperture substrate 206, an electromagnetic lens 207 (objective lens), and an objective deflector 208 are arranged in this order in the lens barrel 102 (multi-electron beam column) in which the lens barrel 104 and the space are blocked off so that light can pass through and a vacuum is maintained. Inside the lens barrel 102, a plurality of driving mechanisms (driving circuits) 232, 234, and 236 are arranged.

[0019] The driving mechanism 232 (photocathode driving mechanism) moves the photoelectron emission mechanism 210 in a direction perpendicular to the central axis of the electron beam trajectory. The driving mechanism 234 (deflector driving mechanism) moves the blanking aperture array mechanism 204 (one example of a deflector) in a direction perpendicular to the central axis of the electron beam trajectory. The driving mechanism 236 (aperture driving mechanism) moves the first limiting aperture substrate 206 in a direction perpendicular to the central axis of the electron beam trajectory.

[0020] In the drawing mechanism 150, an XY stage 105 is disposed in a drawing chamber 103 disposed under the lens barrel 102. A sample 101, such as a mask blank coated with resist that serves as a drawing target substrate during drawing, is disposed on the XY stage 105. The sample 101 includes an exposure mask for manufacturing a semiconductor device, or a semiconductor substrate (silicon wafer) on which a semiconductor device is manufactured. The lens barrel 102 and the drawing chamber 103 are evacuated by a vacuum pump (not shown) and controlled to a pressure lower than atmospheric pressure. The lens barrel 104 is controlled to atmospheric pressure. A light intensity meter 106 for measuring light intensity is disposed on the XY stage 105. For example, a photodiode is preferably used as the light intensity meter 106. A Faraday cup 107 for measuring the current amount of the electron beam is disposed on the XY stage 105.

[0021] In the photoelectron emission mechanism 210 (photocathode), a multi-lens array 212 is disposed on a glass substrate 214, and a multi-light-shielding film 216 serving as a light-shielding mask and a photocathode 218 (an example of a photoelectron emitter) are disposed on the rear surface side of the glass substrate 214. A beam expander, which is an example of the illumination optical system 202, is composed of a combination of a concave lens and a convex lens. The elements constituting the illumination optical system 202 are not limited to a beam expander, and may include other lenses and / or mirrors.

[0022] The control circuit 160 includes an overall control circuit 110 that controls the entire drawing apparatus, a memory 111, a pulse drive circuit 112, an adjustment circuit 124, and a measurement circuit 126. The overall control circuit 110, the memory 111, the pulse drive circuit 112, and the adjustment circuit 124 are connected to one another via a bus (not shown). The measurement circuit 126 is connected to the adjustment circuit 124.

[0023] The driving mechanisms 232, 234, 236 and / or the laser light adjustment mechanism 238, and the adjustment circuit 124 constitute an adjustment mechanism 162. Based on the intensity of the transmitted light that passes through the arrangement such as the photoelectron emission mechanism 210 and reaches the XY stage 105, out of the laser light measured by the light intensity measuring device 106, the adjustment mechanism 162 adjusts the intensity.

[0024] 1 shows the configuration necessary for explaining the embodiment 1. The drawing device 100 may also include other configurations that are normally required.

[0025] Next, the operation of the drawing mechanism 150 will be described. Under the control of an overall control circuit 110 that controls the entire drawing device 100, a pulse drive circuit 112 drives a laser light source 201. The laser light source 201 generates laser light 200 (excitation light) having a predetermined beam diameter. The laser light 200 includes a pulse wave. The laser light source 201 generates ultraviolet light as the laser light 200. For example, it is preferable to use ultraviolet light having a wavelength of about 260 to 280 nm, for example, ultraviolet light having a wavelength of 266 nm.

[0026] The laser light 200 generated from the laser light source 201 is expanded by a beam expander included in the illumination optical system 202, passes through the partition window 11, and illuminates the multi-lens array 212. The multi-lens array 212 splits the laser light 200 into multiple beams. The multi-lens array 212 is configured with a lens array in which individual lenses, the number of which is equal to or greater than the number of the multi-electron beams 20, are arranged in an array. For example, the multi-lens array 212 is configured with 512×512 lenses. The multi-lens array 212 focuses each of the multiple split beams, and adjusts the focal position of each beam to the height position of the surface of the photocathode 218. By focusing the beams using the multi-lens array 212, the effective brightness of each beam can be increased.

[0027] A plurality of openings are formed in the multi-light-shielding film 216 so that the irradiation spot area of ​​each of the plurality of split and condensed lights (multi-light) is exposed. This allows light that has passed through the glass substrate 214 without being condensed by the multi-lens array 212 and / or scattered light to be blocked by portions other than the openings. For example, a chromium (Cr) film is preferably used as the multi-light-shielding film 216.

[0028] Each light passing through the multi-light-shielding film 216 is incident on the surface of the photocathode 218. The photocathode 218 receives a plurality of light beams from the surface and emits a multi-photoelectron beam 20 from the back surface. For example, 512×512 arrayed photoelectron beams are emitted in the x and y directions. Specifically, the photocathode 218 receives a plurality of light beams from the surface and emits photoelectrons from each position on the back surface corresponding to the incident position. The photocathode 218 is preferably made of a film mainly made of a carbon (C)-based material. Furthermore, it is preferable that the back surface side (downstream side in FIG. 1) of the C-based main film is coated with, for example, platinum (Pt). When the surface of the photocathode 218 is irradiated with photons with energy larger than the work function of the material of the photocathode 218, the photocathode 218 emits photoelectrons from the back surface. In order to obtain a multi-photoelectron beam 20 with a sufficient current density for use in the drawing apparatus 100, the surface of the photocathode 218 is set to, for example, 0.1 to 100 W / cm 2 degree (10 3 ~10 6 W / m 2 It is preferable that light of about 100 nm is incident.

[0029] The multiple photoelectron beams 20 emitted from the photocathode 218 are accelerated by being extracted by the multi-anode electrode 220 to which a relatively positive potential is applied, and travel toward the shaping aperture array substrate 203 .

[0030] FIG. 2 is a conceptual diagram showing the configuration of the shaping aperture array substrate in the first embodiment. In FIG. 2, holes (openings) 22 are formed in a matrix of p columns by q columns (p, q≧2) in the x and y directions at a predetermined arrangement pitch in the shaping aperture array substrate 203. In FIG. 2, for example, 512×512 columns of holes 22 are formed in the x and y directions. The holes 22 are formed in accordance with the trajectory of the multi-photoelectron beam 20 emitted from the photocathode 218. Each photoelectron beam emitted from the photocathode 218 is not emitted with a uniform shape and size. For example, it spreads in the diverging direction. Therefore, the shape and size of each photoelectron beam are shaped by the shaping aperture array substrate 203. In FIG. 2, each hole 22 is formed in a rectangle of the same size and shape. Alternatively, it may be a circle of the same diameter. The shaping aperture array substrate 203 forms the multi-photoelectron beam 20 used for drawing. Specifically, a portion of the emitted multi-photoelectron beams passes through each of the multiple holes 22, thereby shaping the multi-photoelectron beams 20 into a desired shape and size.

[0031] FIG. 3 is a cross-sectional view showing the configuration of the blanking aperture array mechanism in the first embodiment. In the blanking aperture array mechanism 204, as shown in FIG. 3, a semiconductor substrate 31 made of silicon or the like is placed on a support base 33. The central part of the substrate 31 is thinly scraped from, for example, the back side, and processed into a membrane region 330 (first region) having a thin film thickness h. The periphery surrounding the membrane region 330 becomes an outer peripheral region 332 (second region) having a thick film thickness H. The upper surface of the membrane region 330 and the upper surface of the outer peripheral region 332 are formed to be at the same height position or substantially at the same height position. The substrate 31 is held on the support base 33 at the back side of the outer peripheral region 332. The central part of the support base 33 is open, and the position of the membrane region 330 is located in the open region of the support base 33.

[0032] In the membrane region 330, a passage hole 25 (opening) for passing each beam of the multi-photoelectron beam 20 is opened at a position corresponding to each hole 22 of the shaping aperture array substrate 203 shown in Fig. 2. In other words, a plurality of passage holes 25 through which the corresponding beams of the multi-photoelectron beam 20 using an electron beam pass is formed in an array in the membrane region 330 of the substrate 31. Then, on the membrane region 330 of the substrate 31, a plurality of electrode pairs each having two electrodes are disposed at positions facing each other across a corresponding passage hole 25 among the plurality of passage holes 25. Specifically, on the membrane region 330, as shown in Fig. 3, a pair of a control electrode 24 for blanking deflection and a counter electrode 26 (blanker: blanking deflector) is disposed across a passage hole 25 corresponding to a position near each passage hole 25. Moreover, inside the substrate 31, a control circuit 45 (logic circuit) that applies a deflection voltage to the control electrode 24 for each passage hole 25 is disposed near each passage hole 25 on the membrane region 330. The counter electrode 26 for each beam is connected to ground.

[0033] Further, each control circuit 45 is connected with n-bit (e.g., 10-bit) parallel wiring for control signals. In addition to n-bit parallel wiring for control signals, each control circuit 45 is connected with wiring for clock signal lines, read signals, shot signals, and power supplies. An individual blanking control mechanism is configured for each beam constituting the multi-beam by the control electrode 24, the counter electrode 26, and the control circuit 45. Further, the multiple control circuits 45 formed in an array in the membrane region 330 are grouped, for example, by the same row or the same column, and the control circuits 45 in the group are connected in series. Then, a signal from the pad 43 arranged for each group is transmitted to the control circuit 45 in the group. Specifically, a shift register (not shown) is arranged in each control circuit 45, and, for example, the shift registers in the control circuits 45 of the beams in the same row of the p×q multi-beams are connected in series. Then, for example, the control signals of the beams in the same row of the p×q multi-beams are transmitted in series, and the control signals of each beam are stored in the corresponding control circuit 45 by, for example, p clock signals.

[0034] An amplifier (one example of a switching circuit) (not shown) is disposed within the control circuit 45. The amplifier is connected to a positive potential (Vdd: blanking potential: first potential) (for example, 5V) (first potential) and a ground potential (GND: second potential). An output line (OUT) of the amplifier is connected to a control electrode 24. On the other hand, a ground potential is applied to the counter electrode 26. A plurality of control electrodes 24 to which a blanking potential and a ground potential are switchably applied are disposed on the substrate 31 at positions facing the corresponding counter electrodes 26 of the plurality of counter electrodes 26 across the corresponding passage holes 25 of the plurality of passage holes 25.

[0035] When an L potential is applied to the amplifier input (IN), the amplifier output (OUT) becomes a positive potential (Vdd), and the corresponding beam is deflected by an electric field due to the potential difference with the ground potential of the opposing electrode 26, and is controlled so as to be turned OFF by blocking with the first limiting aperture substrate 206. On the other hand, when an H potential is applied to the amplifier input (IN) (active state), the amplifier output (OUT) becomes a ground potential, and there is no potential difference with the ground potential of the opposing electrode 26, so the corresponding beam is not deflected, and the beam is controlled so as to be turned ON by passing through the first limiting aperture substrate 206.

[0036] The blanking aperture array mechanism 204 (an example of a deflector) performs individual blanking control to individually switch beam ON / OFF of each beam of the multi-photoelectron beam 20 by deflecting each beam of the multi-photoelectron beam 20 passing through the corresponding passage hole 25. Specifically, the photoelectron beam 20 passing through each passage hole is deflected by voltages applied to two control electrodes 24 and counter electrodes 26 that are independently paired. Blanking control is performed by such deflection. Specifically, the pair of the control electrode 24 and counter electrode 26 blanks and deflects the corresponding beam of the multi-photoelectron beam 20 individually by potentials switched by amplifiers that are corresponding switching circuits. In this way, the multiple blankers perform blanking deflection of the corresponding beams of the multi-photoelectron beam 20 that have passed through the multiple holes 22 (openings) of the shaping aperture array substrate 203.

[0037] The multi-photoelectron beams 20 that have passed through the blanking aperture array mechanism 204 are reduced in size by the electromagnetic lens 205 and proceed toward a central hole (opening) formed in the first limiting aperture substrate 206 disposed near the crossover position. Here, among the multi-photoelectron beams 20, the electron beams deflected by the blanker of the blanking aperture array mechanism 204 are shifted from the central hole of the first limiting aperture substrate 206 and are blocked by the first limiting aperture substrate 206, thereby restricting their passage. On the other hand, the electron beams that have not been deflected by the blanker of the blanking aperture array mechanism 204 pass through the central hole of the first limiting aperture substrate 206 as shown in FIG. 1. Blanking control is performed by turning on / off the individual blanking mechanisms 47, and the beams are controlled to be turned on / off. In this way, the first limiting aperture substrate 206 blocks each beam deflected by the individual blanking control mechanisms so that the beams are turned off. Then, for each beam, a beam for one shot is formed by the beams that have passed through the first limiting aperture substrate 206 from when the beam is turned ON until when the beam is turned OFF. The sample 101 is irradiated with the multi-photoelectron beam 20 controlled to be beam ON by the electron optical system. Specifically, the multi-photoelectron beam 20 that has passed through the first limiting aperture substrate 206 is focused by the electromagnetic lens 207 (objective lens) to become a pattern image with a desired reduction ratio, and the entire multi-photoelectron beam 20 controlled to be beam ON is deflected in the same direction by the objective deflector 208, and each beam is irradiated at each irradiation position on the sample 101. Ideally, the multi-photoelectron beam 20 irradiated at one time is arranged at a pitch obtained by multiplying the arrangement pitch of the multiple holes 22 in the shaping aperture array substrate 203 by the desired reduction ratio described above.

[0038] FIG. 4 is a diagram for explaining transmitted light in the first embodiment. As described above, the film thickness of the photocathode 218 is very thin, and as shown in FIG. 4(a), a part of the irradiated laser light passes through the photocathode 218. In the example of FIG. 4(a), a plurality of transmitted lights 13 that have passed through the photocathode 218 are shown. Diffracted light is also added to each transmitted light 13. The plurality of transmitted lights 13 have an intensity distribution as shown in FIG. 4(b). Assuming that the laser light source 201 outputs the laser light 200 with an output of, for example, 1000 mW, the transmission efficiency of the illumination optical system 202 is, for example, 30%, and the transmittance of the photocathode 218 is, for example, 40%, the intensity of the transmitted light that passes through the photocathode 218 is 120 mW. Assuming that the aperture ratio of the multi-anode electrode 220 is, for example, 1%, and the aperture ratio of the mechanism including the shaping aperture array substrate 203 and the blanking aperture array mechanism 204 is, for example, 1%, transmitted light with an intensity of 0.01 mW passes through the blanking aperture array mechanism 204. If 100% of the transmitted light that passes through the blanking aperture array mechanism 204 reaches the surface of the sample 101 and is 100% absorbed by the resist, the intensity of 0.01 mW corresponds to 0.2 nA for a 50 kV electron beam. In this way, there is a problem that the transmitted light, apart from the electron beam, exposes the resist on the sample 101. If the resist on the sample 101 is exposed, it affects the drawing accuracy. Therefore, in the first embodiment, the intensity of the transmitted light that reaches the XY stage 105 is reduced.

[0039] 5 is a diagram for explaining a method for adjusting the intensity of transmitted light in the first embodiment. In the first embodiment, while measuring the intensity of transmitted light reaching the XY stage 105 with a light intensity measuring device 106, adjustments are made to the laser beam 200 illuminating the photoelectron emission mechanism 210, the position of the photoelectron emission mechanism 210, the position of the blanking aperture array mechanism 204, and / or the position of the first limiting aperture substrate 206. In the first embodiment, adjustments are made, for example, starting from the adjustment items on the upstream side.

[0040] Fig. 6 is a block diagram showing an example of the internal configuration of the adjustment circuit in the embodiment 1. In Fig. 6, a laser light incident angle adjustment circuit 41, a laser light convergence angle adjustment circuit 51, a photoelectron emission mechanism position adjustment circuit 61, a blanking mechanism position adjustment circuit 71, and a limiting aperture position adjustment circuit 81 are arranged in the adjustment circuit 124.

[0041] In the laser beam incidence angle adjustment circuit 41, a storage device 42 such as a magnetic disk device, a laser beam incidence angle fluctuation amount setting section 40, a determination section 44, and a laser beam incidence angle setting section 46 are arranged.

[0042] In the laser beam convergence angle adjustment circuit 51, a storage device 52 such as a magnetic disk device, a laser beam convergence angle fluctuation amount setting section 50, a determination section 54, and a laser beam convergence angle setting section 56 are arranged.

[0043] In the photoelectron emission mechanism position adjustment circuit 61, a storage device 62 such as a magnetic disk device, a photoelectron emission mechanism movement amount setting section 60, a determination section 64, and a photoelectron emission mechanism position setting section 66 are arranged.

[0044] In the blanking mechanism position adjustment circuit 71, a storage device 72 such as a magnetic disk device, a blanking mechanism movement amount setting section 70, a determination section 74, and a blanking mechanism position setting section 76 are arranged.

[0045] In the limiting aperture position adjustment circuit 81, a storage device 82 such as a magnetic disk device, a limiting aperture movement amount setting section 80, a determination section 84, and a limiting aperture position setting section 86 are arranged.

[0046] A series of "~ units" such as the laser light incidence angle variation amount setting unit 40, the determination unit 44, the laser light incidence angle setting unit 46, the laser light convergence angle variation amount setting unit 50, the determination unit 54, the laser light convergence angle setting unit 56, the photoelectron emission mechanism movement amount setting unit 60, the determination unit 64, the photoelectron emission mechanism position setting unit 66, the blanking mechanism movement amount setting unit 70, the determination unit 74, the blanking mechanism position setting unit 76, the limiting aperture movement amount setting unit 80, the determination unit 84, and the limiting aperture position setting unit 86 shown in FIG. 6 have processing circuits. Such processing circuits include electric circuits, computers, processors, circuit boards, quantum circuits, or semiconductor devices. In addition, each unit may use a common processing circuit (the same processing circuit). Alternatively, different processing circuits (separate processing circuits) may be used. Input data or calculated results required for the laser light incidence angle variation amount setting unit 40, the judgment unit 44, the laser light incidence angle setting unit 46, the laser light convergence angle variation amount setting unit 50, the judgment unit 54, the laser light convergence angle setting unit 56, the photoelectron emission mechanism movement amount setting unit 60, the judgment unit 64, the photoelectron emission mechanism position setting unit 66, the blanking mechanism movement amount setting unit 70, the judgment unit 74, the blanking mechanism position setting unit 76, the limiting aperture movement amount setting unit 80, the judgment unit 84, and the limiting aperture position setting unit 86 are stored in a memory (not shown) in the adjustment circuit 124 or in the memory 111 each time.

[0047] Fig. 7 is a flow chart showing some of the main steps of the writing method according to the first embodiment. In Fig. 7, the writing method according to the first embodiment performs a series of steps including a laser light incident angle variation setting step (S102), a transmitted laser light intensity measuring step (S104), a determination step (S106), and a laser light incident angle setting step (S108). Fig. 7 shows a step of adjusting the laser light incident angle as one of the techniques for adjusting the transmitted laser light intensity.

[0048] As a laser beam incidence angle fluctuation setting step (S102), the laser beam incidence angle fluctuation setting unit 40 sets, within a preset fluctuation range, in the laser beam adjustment mechanism 238 a fluctuation amount of the laser beam incidence angle into the illumination optical system 202. As an initial value of the laser beam incidence angle, for example, 0° is initially set.

[0049] As a transmitted laser light intensity measuring step (S104), first, the XY stage 105 is moved to move the light intensity measuring device 106 into the irradiation area of ​​the multi-photoelectron beam 20. Next, the laser light adjustment mechanism 238 inputs the laser light 200 from the laser light source 201, and varies the laser light incidence angle to the illumination optical system 202 by a set variation amount.

[0050] The laser light adjustment mechanism 238 adjusts the incidence conditions of the laser light incident on the photoelectron emission mechanism 210 (photocathode). Specifically, the laser light adjustment mechanism 238 changes the laser light incidence angle and the laser light convergence angle. As the laser light adjustment mechanism 238, for example, one or more of a mirror or lens controlled by a servo motor or a piezoelectric element, a galvanometer mirror, a moire lens, a variable focus lens, and a liquid lens can be used.

[0051] Fig. 8 is a diagram for explaining the laser light incidence angle in the embodiment 1. As shown in Fig. 8, the laser light adjustment mechanism 238 adjusts the laser light incidence angle θ1 to the illumination optical system 202. By varying the incidence conditions (here, the incidence angle) of each light incident on the photocathode 218 and varying the trajectory of the transmitted light that passes through the photocathode 218, it is possible to change the intensity of the transmitted light that reaches the XY stage 105.

[0052] The laser light incidence angle is varied, and for each varied incidence angle, the intensity of transmitted light 13 that passes through photoelectron emission mechanism 210 (photocathode 218), passes through blanking aperture array mechanism 204 and first limiting aperture substrate 206, and reaches the XY stage 105 is measured by light intensity meter 106, as shown in Fig. 5. The measured intensity of transmitted light 13 is converted into a digital signal by measurement circuit 126 and output to adjustment circuit 124. The intensity data of transmitted light 13 input to adjustment circuit 124 is temporarily stored in storage device 42.

[0053] In the judgment step (S106), the judgment unit 44 judges whether the measured intensity of the transmitted light 13 is a minimum value within a preset fluctuation range. If it is a minimum value, the process proceeds to the laser light incident angle setting step (S108). If it is not a minimum value, the process returns to the laser light incident angle fluctuation amount setting step (S102), and repeats each step from the laser light incident angle fluctuation amount setting step (S102) to the judgment step (S106) while changing the laser light incident angle until it is judged that the intensity is a minimum value. For example, the first and second measurements cannot determine whether the intensity is a minimum value, so the measurements are repeated as described above. When the intensity of the transmitted light decreases as the laser light incident angle is varied, the intensity of the transmitted light usually decreases in sequence, and after it starts to increase, it decreases again, which is thought to be due to an error caused by noise. Therefore, the judgment unit 44 may judge the minimum value when the intensity of the transmitted light decreases in sequence within a preset fluctuation range, exceeds the noise amount, and starts to increase. However, since the possibility of obtaining multiple minimum values ​​within a preset fluctuation range is not necessarily zero, it is better to determine the minimum value after performing all measurements of the intensity of transmitted light within the preset fluctuation range, although this will require longer adjustment time.

[0054] As a laser light incidence angle setting step (S108), the laser light incidence angle setting unit 46 sets the laser light incidence angle at which the intensity of the transmitted light 13 takes a minimum value within a preset fluctuation range in the laser light adjustment mechanism 238, and adjusts the incidence angle of the laser light 200 to an incidence angle at which the intensity of the transmitted light 13 becomes smaller than, for example, an initial value, for example, the incidence angle at which the intensity takes a minimum value.

[0055] Fig. 9 is a flow chart showing another part of the main steps of the writing method in the embodiment 1. In Fig. 9, the writing method in the embodiment 1 performs a series of steps including a laser beam convergence angle fluctuation setting step (S112), a transmitted laser beam intensity measuring step (S114), a determination step (S116), and a laser beam convergence angle setting step (S118) following the steps in Fig. 7. Fig. 9 shows a step of adjusting the laser beam convergence angle as one of the methods for adjusting the transmitted laser beam intensity.

[0056] As a laser beam convergence angle fluctuation amount setting step (S112), the laser beam convergence angle fluctuation amount setting unit 50 sets, within a preset fluctuation amount range, in the laser beam adjustment mechanism 238 a fluctuation amount of the laser beam convergence angle to the illumination optical system 202. As an initial value of the laser beam convergence angle, for example, 0° is initially set.

[0057] As a transmitted laser light intensity measuring step (S114), the laser light adjusting mechanism 238 inputs the laser light 200 from the laser light source 201, and varies the laser light convergence angle to the illumination optical system 202 by a set variation amount.

[0058] Fig. 10 is a diagram for explaining the laser beam convergence angle in the embodiment 1. As shown in Fig. 10, the laser beam adjustment mechanism 238 variably adjusts the laser beam convergence angle θ2 to the illumination optical system 202. By varying the incidence conditions (convergence angles in this case) of each beam incident on the photocathode 218 and varying the trajectory of the transmitted beam passing through the photocathode 218, it is possible to change the intensity of the transmitted beam reaching the XY stage 105.

[0059] The laser light convergence angle is varied, and for each varied convergence angle, the intensity of transmitted light 13 that passes through photoelectron emission mechanism 210 (photocathode 218), passes through blanking aperture array mechanism 204 and first limiting aperture substrate 206, and reaches the top of XY stage 105 is measured by light intensity meter 106, as shown in Fig. 5. The measured intensity of transmitted light 13 is converted into a digital signal by measurement circuit 126 and output to adjustment circuit 124. The intensity data of transmitted light 13 input to adjustment circuit 124 is temporarily stored in storage device 52.

[0060] In the judgment step (S116), the judgment unit 54 judges whether the measured intensity of the transmitted light 13 is a minimum value within a preset fluctuation range. If it is a minimum value, the process proceeds to the laser light incident angle setting step (S118). If it is not a minimum value, the process returns to the laser light convergence angle fluctuation amount setting step (S112), and repeats each step from the laser light convergence angle fluctuation amount setting step (S112) to the judgment step (S116) while changing the laser light convergence angle until it is judged that the intensity is a minimum value. As described above, for example, the first and second measurements cannot determine whether the intensity is a minimum value, so the measurements are repeated as described above. When the intensity of the transmitted light decreases as the laser light convergence angle is varied, the intensity of the transmitted light usually decreases in sequence, and after it starts to increase, it decreases again, which is thought to be due to an error caused by noise. Therefore, the judgment unit 54 may judge the minimum value when the intensity of the transmitted light decreases in sequence within a preset fluctuation range, exceeds the noise amount, and starts to increase. However, since the possibility of obtaining multiple minimum values ​​within a preset fluctuation range is not necessarily zero, it is better to determine the minimum value after performing all measurements of the transmitted light intensity within the preset fluctuation range, although this will require longer adjustment time.

[0061] As a laser light convergence angle setting step (S118), the laser light convergence angle setting unit 56 sets the laser light convergence angle at which the intensity of the transmitted light 13 takes a minimum value within a preset fluctuation range in the laser light adjustment mechanism 238, and adjusts the convergence angle of the laser light 200 to a convergence angle at which the intensity of the transmitted light 13 becomes smaller than, for example, an initial value, for example, the convergence angle at which the intensity takes a minimum value.

[0062] Fig. 11 is a flow chart showing another part of the main steps of the writing method in the embodiment 1. In Fig. 11, the writing method in the embodiment 1 performs a series of steps including a step of setting a movement amount of a photoelectron emission mechanism (photocathode) (S122), a step of measuring a transmitted laser light intensity (S124), a step of determining (S126), and a step of setting a position of the photoelectron emission mechanism (S128) following the steps in Fig. 9. Fig. 11 shows a step of adjusting the position of photoelectron emission mechanism 210 as one method for adjusting the transmitted laser light intensity.

[0063] As a photoelectron emission mechanism movement amount setting step (S122), the photoelectron emission mechanism movement amount setting unit 60 sets a movement amount for the driving mechanism 232 to move the photoelectron emission mechanism 210 within a preset movement amount range. As the initial position of the photoelectron emission mechanism (photocathode) 210, for example, x, y = 0 is initially set.

[0064] As a transmitted laser light intensity measuring step (S124), the driving mechanism 232 moves the photoelectron emission mechanism 210 by a set movement amount. The driving mechanism 232 can move the photoelectron emission mechanism 210 in two-dimensional directions (x and y directions) perpendicular to the central axis of the electron beam trajectory (z direction). Here, a case where the photoelectron emission mechanism 210 is moved in two dimensions will be described, but the photoelectron emission mechanism 210 may be moved in only one dimension.

[0065] 5, by moving the photoelectron emission mechanism (photocathode) 210, which is an arrangement, in the x and y directions, the emission position of each transmitted light 13 can be shifted, and the trajectory of the transmitted light can be varied. As a result, the intensity of the transmitted light reaching the XY stage 105 can be changed.

[0066] The photoelectron emission mechanism 210 is moved, and with each movement, the intensity of the transmitted light 13 that passes through the arranged photoelectron emission mechanism 210 (photocathode 218), blanking aperture array mechanism 204, and first limiting aperture substrate 206 and reaches the XY stage 105 is measured by the light intensity meter 106, as shown in Fig. 5. The measured intensity of the transmitted light 13 is converted into a digital signal by the measurement circuit 126 and output to the adjustment circuit 124. The intensity data of the transmitted light 13 input to the adjustment circuit 124 is temporarily stored in the storage device 62.

[0067] In the determination step (S126), the determination unit 64 determines whether the measured intensity of the transmitted light 13 is a minimum value within a preset movement range. If it is a minimum value, the process proceeds to the photoelectron emission mechanism position setting step (S128). If it is not a minimum value, the process returns to the photoelectron emission mechanism movement amount setting step (S122), and each step from the photoelectron emission mechanism movement amount setting step (S122) to the determination step (S126) is repeated while changing the position of the photoelectron emission mechanism until it is determined that the intensity is a minimum value. As described above, for example, the first and second measurements cannot determine whether the intensity is a minimum value, so the measurements are repeated as described above. When the intensity of the transmitted light decreases as the position of the photoelectron emission mechanism 210 is moved, the intensity of the transmitted light usually decreases in sequence, and after it starts to increase, it is thought that the reason for the decrease again is due to noise-induced errors. Therefore, the determination unit 64 may determine the minimum value when the intensity of the transmitted light decreases in sequence within a preset fluctuation range, exceeds the noise amount, and starts to increase. However, since the possibility of obtaining multiple minimum values ​​within a preset fluctuation range is not necessarily zero, it is better to determine the minimum value after performing all measurements of the transmitted light intensity within the preset fluctuation range, although this will require longer adjustment time.

[0068] As a photoelectron emission mechanism position setting step (S128), the photoelectron emission mechanism position setting unit 66 sets in the driving mechanism 232 the position of the photoelectron emission mechanism 210 where the intensity of the transmitted light 13 has a minimum value within a preset movement range, and adjusts the position of the photoelectron emission mechanism 210 to a position where the intensity of the transmitted light 13 is smaller than, for example, an initial value, for example, the position where it has a minimum value.

[0069] FIG. 12 is a flow chart showing another part of the main steps of the writing method in the first embodiment. In FIG. 12, the writing method in the first embodiment performs a series of steps, namely, a blanking mechanism movement amount setting step (S132), a transmitted laser light intensity measuring step (S134), a determination step (S136), and a blanking mechanism position setting step (S138), following the steps in FIG. 11. FIG. 12 shows a step of adjusting the position of the blanking aperture array mechanism 204 as one of the methods for adjusting the transmitted laser light intensity. Each aperture of the blanking aperture array mechanism 204, which is an arrangement, passes an electron beam and also passes a part of the transmitted light. On the other hand, a part of the transmitted light is blocked in the area other than the aperture. Therefore, the transmitted laser light intensity can be adjusted by adjusting (the aperture position of) the blanking aperture array mechanism 204.

[0070] As a blanking mechanism movement amount setting step (S132), the blanking mechanism movement amount setting unit 70 sets, within a preset movement amount range, a movement amount for the drive mechanism 234 to move the blanking aperture array mechanism 204. As the initial position of the blanking aperture array mechanism 204, initially, for example, x, y=0 is set.

[0071] As a transmitted laser light intensity measuring step (S134), the driving mechanism 234 moves the blanking aperture array mechanism 204 by a set movement amount. The driving mechanism 234 can move the blanking aperture array mechanism 204 in two-dimensional directions (x and y directions) perpendicular to the central axis of the electron beam trajectory (z direction). Here, the case of moving in two dimensions will be described, but it is also possible to move in only one dimension.

[0072] 5, by moving the blanking aperture array mechanism 204 in the x and y directions, the positions of the passing holes 25 through which the transmitted light beams 13 can pass can be shifted. As a result, the intensity of the transmitted light beams reaching the XY stage 105 can be changed.

[0073] The blanking aperture array mechanism 204 is moved, and with each movement, as shown in Fig. 5, the intensity of the transmitted light 13 that passes through the respective arranged objects, the photoelectron emission mechanism 210 (photocathode 218), the blanking aperture array mechanism 204, and the first limiting aperture substrate 206, and reaches the XY stage 105 is measured by the light intensity meter 106. The measured intensity of the transmitted light 13 is converted into a digital signal by the measurement circuit 126 and output to the adjustment circuit 124. The intensity data of the transmitted light 13 input to the adjustment circuit 124 is temporarily stored in the storage device 72.

[0074] In the judgment step (S136), the judgment unit 74 judges whether the measured intensity of the transmitted light 13 is a minimum value within a preset movement range. If it is a minimum value, the process proceeds to the blanking mechanism position setting step (S138). If it is not a minimum value, the process returns to the blanking mechanism movement amount setting step (S132), and each step from the blanking mechanism movement amount setting step (S132) to the judgment step (S136) is repeated while changing the position of the blanking mechanism until it is judged that the intensity is a minimum value. As described above, for example, the first and second measurements cannot determine whether the intensity is a minimum value, so the measurements are repeated as described above. When the intensity of the transmitted light decreases as the position of the blanking aperture array mechanism 204 is moved, the intensity of the transmitted light usually decreases in sequence, and after it starts to increase, it decreases again, which is thought to be due to an error caused by noise. Therefore, the judgment unit 74 may judge the minimum value when the intensity of the transmitted light decreases in sequence within a preset fluctuation range, exceeds the noise amount, and starts to increase. However, since the possibility of obtaining multiple minimum values ​​within a preset fluctuation range is not necessarily zero, it is better to determine the minimum value after performing all measurements of the transmitted light intensity within the preset fluctuation range, although this will require longer adjustment time.

[0075] As a blanking mechanism position setting step (S138), the blanking mechanism position setting unit 76 sets the position of the blanking mechanism where the intensity of the transmitted light 13 is at a minimum value within a preset movement range to the driving mechanism 234, and adjusts the position of the blanking aperture array mechanism 204 to a position where the intensity of the transmitted light 13 is smaller than, for example, an initial value, for example, the position where it is at a minimum value.

[0076] FIG. 13 is a flow chart showing another part of the main steps of the writing method in the first embodiment. In FIG. 13, the writing method in the first embodiment performs a series of steps, namely, a limiting aperture movement amount setting step (S142), a transmitted laser light intensity measuring step (S144), a determination step (S146), and a limiting aperture position setting step (S148), following the steps in FIG. 12. FIG. 13 shows a step of adjusting the position of the first limiting aperture substrate 206 as one of the methods for adjusting the transmitted laser light intensity. The aperture of the first limiting aperture substrate 206, which is an arrangement, passes the electron beam and also passes a part of the transmitted light. On the other hand, the area other than the aperture blocks a part of the transmitted light. Therefore, the transmitted laser light intensity can be adjusted by adjusting (the aperture position of) the first limiting aperture substrate 206.

[0077] As a limiting aperture movement amount setting step (S142), the limiting aperture movement amount setting unit 80 sets, within a preset movement amount range, a movement amount for moving the first limiting aperture substrate 206 in the driving mechanism 236. As an initial position of the first limiting aperture substrate 206, for example, x, y = 0 is initially set.

[0078] As a transmitted laser light intensity measuring step (S144), the driving mechanism 236 moves the first limiting aperture substrate 206 by a set movement amount. The driving mechanism 236 can move the first limiting aperture substrate 206 in two-dimensional directions (x and y directions) perpendicular to the central axis of the electron beam trajectory (z direction). Here, a case where the first limiting aperture substrate 206 is moved in two dimensions will be described, but the first limiting aperture substrate 206 may be moved in only one dimension.

[0079] 5, by moving the first limiting aperture substrate 206 in the x and y directions, the positions of the openings through which the transmitted light beams 13 can pass can be shifted. As a result, the intensity of the transmitted light beams reaching the XY stage 105 can be changed.

[0080] The first limiting aperture substrate 206 is moved, and with each movement, the intensity of the transmitted light 13 that passes through the arranged photoelectron emission mechanism 210 (photocathode 218), blanking aperture array mechanism 204, and first limiting aperture substrate 206 and reaches the XY stage 105 is measured by the light intensity meter 106, as shown in Fig. 5. The measured intensity of the transmitted light 13 is converted into a digital signal by the measurement circuit 126 and output to the adjustment circuit 124. The intensity data of the transmitted light 13 input to the adjustment circuit 124 is temporarily stored in the storage device 82.

[0081] In the judgment step (S146), the judgment unit 84 judges whether the measured intensity of the transmitted light 13 is a minimum value within a preset movement range. If it is a minimum value, the process proceeds to the limiting aperture position setting step (S148). If it is not a minimum value, the process returns to the limiting aperture movement amount setting step (S142), and each step from the limiting aperture movement amount setting step (S142) to the judgment step (S146) is repeated while changing the position of the limiting aperture until it is judged that the intensity is a minimum value. As described above, for example, the first and second measurements cannot determine whether the intensity is a minimum value, so the process is repeated as described above. When the intensity of the transmitted light decreases as the position of the first limiting aperture substrate 206 is moved, the intensity of the transmitted light usually decreases in sequence, and then decreases again after turning to an upward trend, which is thought to be due to an error caused by noise. Therefore, the determination unit 84 may determine the minimum value when the intensity of the transmitted light gradually decreases within a preset fluctuation range and exceeds the noise and starts to show an upward trend. However, since the possibility of multiple minimum values ​​being taken within the preset fluctuation range is not necessarily zero, it is better to determine the minimum value after performing all measurements of the intensity of the transmitted light within the preset fluctuation range, although this will require a longer adjustment time.

[0082] As a limiting aperture substrate position setting step (S148), the limiting aperture position setting unit 86 sets in the drive mechanism 236 the position of the limiting aperture substrate where the intensity of the transmitted light 13 has a minimum value within a preset movement range, and adjusts the position of the first limiting aperture substrate 206 to a position where the intensity of the transmitted light 13 is smaller than, for example, an initial value, for example, the position where it has a minimum value.

[0083] Fig. 14 is a diagram for explaining the relationship between the transmitted laser light intensity and each adjustment item in the first embodiment. In Fig. 14, the vertical axis indicates the transmitted laser light intensity (intensity of transmitted light 13), and the horizontal axis indicates each adjustment item, that is, the angle of incidence, the convergence angle, the position of the photocathode (photoelectron emitter), the position of the blanking aperture array mechanism (BAA unit), or the position of the limiting aperture. By adjusting each adjustment item, the intensity of the transmitted light 13 that reaches the XY stage 105 varies for each adjustment item. In the example of Fig. 14, a case where two minimum values ​​occur is shown, and in such a case, it is preferable to adjust to a condition where the smaller minimum value is obtained.

[0084] As described above, the values ​​of the adjustment items are adjusted so that the intensity of the transmitted light 13 reaching the XY stage 105 is smaller than the initial value, for example. This makes it possible to suppress or reduce the transmitted light 13 reaching the surface of the sample 101 when the surface of the sample 101 is irradiated with the multi-photoelectron beams 20. Therefore, it is possible to suppress or reduce the exposure of the resist applied to the sample 101.

[0085] Fig. 15 is a flow chart showing the remaining main steps of the writing method according to the embodiment 1. In Fig. 15, the writing method according to the embodiment 1 carries out a series of steps, that is, an electron beam calibration step (S152) and a writing step (S154), following the step of Fig. 13.

[0086] In the electron beam calibration step (S152), first, the XY stage 105 is moved so that the Faraday cup 107 is positioned in the irradiation area of ​​the multi-photoelectron beams 20. Then, the amount of current of the multi-photoelectron beams 20 is measured by the Faraday cup 107. Then, calibration is performed so that the amount of current of the multi-photoelectron beams 20 satisfies a desired value. For example, the 512×512 multi-photoelectron beams 20 are grouped into a predetermined number of beams (for example, 64×64), and the amount of current for each group is measured by the Faraday cup 107 to check whether or not the threshold range is satisfied. If the threshold range is not satisfied, the intensity of the laser light 200 generated from the laser light source 201 is adjusted so as to satisfy the threshold range. Alternatively, the position of the blanking aperture array mechanism 204 and / or the first limiting aperture substrate 206 is adjusted. Since the intensity of the transmitted light 13 varies when the position of the blanking aperture array mechanism 204 or / and the first limiting aperture substrate 206 is adjusted, it is advisable to adjust the intensity of the transmitted light 13 again. The intensity adjustment of the transmitted light 13 is performed within a range in which the multi-photoelectron beams 20 satisfy the threshold range.

[0087] In the drawing step (S154), the drawing mechanism 150 irradiates the sample 101 with the multi-photoelectron beam 20 (electron beam) under conditions adjusted so that the intensity of the transmitted light 13 is smaller than the initial value. In this way, a desired pattern is drawn on the sample 101.

[0088] As described above, according to the first embodiment, in electron beam irradiation, it is possible to reduce the amount of transmitted light 13 reaching the surface of the sample 101. Therefore, for example, it is possible to suppress resist exposure due to transmitted light 13, reduce positional deviation and dimensional deviation of the pattern to be written, and improve writing accuracy.

[0089] Embodiment 2 In the second embodiment, a configuration will be described in which the transmitted light 13 is reduced on the upstream side of the blanking aperture array mechanism 204. Points that are not particularly described below are the same as those in the first embodiment.

[0090] Fig. 16 is a conceptual diagram showing the configuration of a drawing device in embodiment 2. Fig. 16 is the same as Fig. 1 except that an electromagnetic lens 222, a second limiting aperture substrate 227, and an electromagnetic lens 224 are arranged between the multi-anode electrode 220 and the shaping aperture array substrate 203, and a drive mechanism (drive circuit) 233 for driving the second limiting aperture substrate 227 is further arranged instead of the drive circuit 236. It is to be noted that the drive mechanism 236 shown in Fig. 1 may remain in place.

[0091] The electromagnetic lens 222 and the electromagnetic lens 224 form a doublet lens. The electromagnetic lens 222 and the electromagnetic lens 224 are excited to have the same magnitude and opposite signs of the axial magnetic field. A second limiting aperture substrate 227 is disposed at the midpoint between the electromagnetic lens 222 and the electromagnetic lens 224.

[0092] In the second embodiment, most of the transmitted light 13 that has passed through the photocathode 218 can be blocked by the second limiting aperture substrate 227 upstream of the blanking aperture array mechanism 204. However, a part of the transmitted light 13 passes through the opening of the second limiting aperture substrate 227. Therefore, in the second embodiment, the position of the second limiting aperture substrate 227 is adjusted by the driving mechanism 233 under the control of the adjustment circuit 124 so that the intensity of the transmitted light 13 that reaches the XY stage 105 is reduced. The aperture of the second limiting aperture substrate 227, which is an arrangement, passes the electron beam and also passes a part of the transmitted light. On the other hand, a part of the transmitted light is blocked in the area other than the aperture. Therefore, by adjusting (the aperture position of) the second limiting aperture substrate 227, the transmitted laser light intensity can be adjusted. The method of adjusting the position of the second limiting aperture substrate 227 is the same as that of the first limiting aperture substrate 206 described in FIG. 13. In the second embodiment, it is preferable to adjust each adjustment item from the upstream side, as in the first embodiment. Therefore, in the second embodiment, it is preferable to adjust the position of the second limiting aperture substrate 227 before adjusting the position of the blanking aperture array mechanism 204.

[0093] Therefore, in the second embodiment, while measuring the intensity of the transmitted light reaching the XY stage 105 with a light intensity measuring device 106, adjustments are made to the laser beam 200 illuminating the photoelectron emission mechanism 210, the position of the photoelectron emission mechanism 210, the position of the second limiting aperture substrate 227, and / or the position of the blanking aperture array mechanism 204. The manner of each adjustment is the same as in the first embodiment.

[0094] In the second embodiment, the intensity of the transmitted light 13 is reduced by adjusting the position of the second limiting aperture substrate 227, and therefore adjustment of the intensity of the transmitted light 13 by adjusting the position of the first limiting aperture substrate 206 is omitted. However, it goes without saying that the position of the first limiting aperture substrate 206 may be adjusted as in the first embodiment.

[0095] Other details may be the same as those of embodiment 1. According to embodiment 2, like embodiment 1, it is possible to reduce the amount of transmitted light 13 reaching the surface of sample 101 during electron beam irradiation.

[0096] Embodiment 3 In the third embodiment, a configuration in which the trajectories of the multi-photoelectron beams 20 are shifted to reduce the intensity of the transmitted light will be described.

[0097] Fig. 17 is a conceptual diagram showing the configuration of a drawing device in the third embodiment. Fig. 17 is the same as Fig. 1 except that alignment coils 226, 228 are arranged between the multi-anode electrode 220 and the shaping aperture array substrate 203, the positions of the central axes of the shaping aperture array substrate 203, the blanking aperture array mechanism 204, the electromagnetic lens 205, the first limiting aperture substrate 206, the electromagnetic lens 207 (objective lens), and the objective deflector 208 are shifted, and the arrangement of the driving mechanism (driving circuit) 236 is omitted. It is to be noted that the driving mechanism 236 shown in Fig. 1 may remain arranged.

[0098] 17, in the third embodiment, the multi-photoelectron beam 20 accelerated by the multi-anode electrode 220 is deflected by the alignment coil 226 to deflect the central axis of the trajectory in a diagonally downward direction at a predetermined angle, and then the central axis of the trajectory is deflected in the opposite direction at a predetermined angle by the alignment coil 228 to swing back the central axis of the trajectory. This makes it possible to shift the position of the central axis of the trajectory of the multi-photoelectron beam 20 parallel to the z-axis. The central axes of the first limiting aperture substrate 206, the electromagnetic lens 207 (objective lens), and the objective deflector 208 are arranged to match the central axis of the trajectory of the multi-photoelectron beam 20 moved by the alignment coils 226 and 228.

[0099] This allows the relative positional relationship between each opening of the multi-anode electrode 220 and each hole 22 of the shaping aperture array substrate 203 to be shifted. Therefore, each opening of the multi-anode electrode 220 and each hole 22 of the shaping aperture array substrate 203 are no longer on the same straight line. Therefore, the transmitted light 13 that has passed through each opening of the multi-anode electrode 220 is shifted in position from each hole 22 when it enters the shaping aperture array substrate 203. As a result, the shifted transmitted light 13 can be blocked by the shaping aperture array substrate 203. In this way, in this embodiment, the intensity of the transmitted light that reaches the XY stage 105 can be changed by varying the trajectory of the multi-photoelectron beam. Therefore, most of the transmitted light 13 that has passed through the photocathode 218 can be blocked by the shaping aperture array substrate 203 upstream of the blanking aperture array mechanism 204. However, some of the transmitted light 13 passes through the shaping aperture array substrate 203 and proceeds to the blanking aperture array mechanism 204. Therefore, the intensity of the transmitted light that has passed through the shaping aperture array substrate 203 is further reduced by adjusting the position of the blanking aperture array mechanism 204.

[0100] Therefore, in the third embodiment, the intensity of the transmitted light reaching the XY stage 105 is measured by the light intensity measuring device 106 while adjusting the laser light 200 illuminating the photoelectron emission mechanism 210, adjusting the position of the photoelectron emission mechanism 210, and / or adjusting the position of the blanking aperture array mechanism 204. The method of each adjustment is the same as in the first embodiment.

[0101] In the third embodiment, the intensity of the transmitted light 13 is reduced by moving the central axis of the orbit of the multi-photoelectron beams 20, and therefore the adjustment of the reduction in the intensity of the transmitted light 13 by adjusting the position of the first limiting aperture substrate 206 is omitted. However, it goes without saying that the position of the first limiting aperture substrate 206 may be adjusted as in the first embodiment.

[0102] Other details may be the same as those in embodiment 1. According to embodiment 3, like embodiment 1, it is possible to reduce the amount of transmitted light 13 reaching the surface of sample 101 during electron beam irradiation.

[0103] The above describes the embodiments with reference to specific examples. However, the present invention is not limited to these specific examples. In these embodiments, the photocathode, blanking aperture array mechanism 204, first limiting aperture 206, and second limiting aperture 227 are adjusted, but the present invention is not limited to these. The intensity of transmitted light 13 can be adjusted by adjusting the position of other objects provided in the path of transmitted light, such as a shaping aperture array substrate.

[0104] Although the description of the device configuration, control method, and other parts not directly necessary for the explanation of the present invention have been omitted, the required device configuration and control method can be appropriately selected and used. For example, the description of the control unit configuration that controls the drawing device 100 has been omitted, but it goes without saying that the required control unit configuration can be appropriately selected and used.

[0105] In addition, all electron beam irradiation devices and electron beam irradiation methods that include the elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention. [Explanation of symbols]

[0106] 11 Bulkhead window 20 Multi-photoelectron beam 22 holes 24 Control electrode 25 Passing hole 26 Counter electrode 31 Substrate 33 Support stand 40 Laser light incidence angle fluctuation amount setting unit 41 Laser light incident angle adjustment circuit 42,52,62,72,82 Storage device 44 Judgment section 45 Control circuit 46 Laser light incident angle setting unit 50 Laser light convergence angle fluctuation amount setting unit 51 Laser beam convergence angle adjustment circuit 54 Judgment section 56 Laser beam convergence angle setting unit 60 Photoelectron emission mechanism movement amount setting section 61 Photoelectron emission mechanism position adjustment circuit 64 Judgment section 66 Photoelectron emission mechanism position setting section 70 Blanking mechanism travel distance setting section 71 Blanking mechanism position adjustment circuit 74 Judgment section 76 Blanking mechanism position setting part 80 Limit aperture movement setting section 81 Limiting aperture position adjustment circuit 84 Judgment section 86 Limiting aperture position setting section 100 Drawing device 101 Sample 102,104 Telescope tube 103 Drawing room 105 XY Stage 106 Light Intensity Meter 107 Faraday Cup 110 Overall control circuit 111 Memory 112 Pulse drive circuit 124 Adjustment circuit 126 Measurement circuit 150 Drawing mechanism 160 Control circuit 162 Adjustment mechanism 200 Laser Light 201 Excitation Light Source 202 Illumination optical system 220 Multi-anode electrode 203 Shaped aperture array substrate 204 Blanking Aperture Array Mechanism 205 Electromagnetic Lens 206 First limiting aperture substrate 207 Electromagnetic Lens 208 Objective deflector 210 Photoelectron emission mechanism 212 Multi-Lens Array 214 Glass Substrate 216 Multi-light-shielding film 218 Photocathode 220 Multi-anode electrode 222,224 Electromagnetic Lenses 226,228 Alignment coil 227 Second limiting aperture substrate 232, 233, 234, 236 Driving mechanism 238 Laser light adjustment mechanism 330 Membrane Region 332 Outer area

Claims

1. a photocathode that is irradiated with excitation light on its front side and generates a plurality of electron beams from its back side; a blanking aperture array mechanism in which passage holes corresponding to the plurality of electron beams are formed, and which controls the deflection of each of the plurality of electron beams passing through the passage holes; a limiting aperture substrate having an opening formed therein and limiting passage of the plurality of electron beams; a stage on which a sample can be placed, the sample being irradiated with the plurality of electron beams that have passed through the blanking aperture array mechanism and the limiting aperture substrate; an adjustment mechanism that adjusts at least one of a trajectory of transmitted light of the irradiated excitation light passing through an arrangement including the photocathode, the blanking aperture array mechanism, and the limiting aperture substrate up to the stage, and a trajectory of the plurality of electron beams; The arrangement blocks at least a portion of the transmitted light, The adjustment mechanism has a drive mechanism that moves the position of at least one of the objects. Electron beam irradiation device characterized by:

2. 2. The electron beam irradiation device according to claim 1, wherein the adjustment mechanism includes an excitation light adjustment mechanism for adjusting an incidence condition of the excitation light incident on the photocathode.

3. 3. The electron beam irradiation device according to claim 1, wherein the adjustment mechanism deflects the plurality of electron beams at a predetermined angle, and then deflects the plurality of electron beams at the predetermined angle in the opposite direction to move the central axes of the orbits of the plurality of electron beams in parallel.

4. a step of irradiating a front side of a photocathode with excitation light and emitting a plurality of electron beams from a back side of the photocathode; a step of adjusting at least one of a trajectory of transmitted light of the irradiated excitation light passing through an arrangement including the photocathode, a blanking aperture array mechanism for controlling the deflection of each of the plurality of electron beams, and a limiting aperture substrate having openings formed therein and limiting the passage of the plurality of electron beams, and a trajectory of the plurality of electron beams; blocking at least a portion of the transmitted light with the arrangement; irradiating a sample with the plurality of electron beams; moving the position of at least one of the configurations; Electron beam irradiation method comprising:

5. 5. The electron beam irradiation method according to claim 4, wherein in the adjusting step, an incidence condition of the excitation light onto the photocathode is adjusted.

6. 6. The electron beam irradiation method according to claim 4, further comprising the step of deflecting the plurality of electron beams at a predetermined angle, and then deflecting the plurality of electron beams at the predetermined angle in the opposite direction to move the central axes of the orbits of the plurality of electron beams in parallel.

Images