Cryogenic radio frequency resonators for surface ion traps.

Abstract

A cryogenic radio frequency (RF) resonator system, method, and storage medium are provided that are compact, monolithic, modular, and impedance matched to cryogenic ion traps to solve technical problems facing cryogenic ion traps. A cryogenic RF resonator circuit board (100) is power efficient, properly impedance matched to an RF source, has a stable gain profile, and is compatible with low temperature and ultra-high vacuum environments. The gain profile is selected so that the cryogenic RF resonator functions as a cryogenic RF amplifier. The cryogenic RF resonator improves the performance of ion traps by reducing or minimizing heat load and reducing or minimizing undesirable noise that can inadvertently drive trapped ions. This improves the performance of atomic clocks and mass spectrometers, and in particular, trapped ion quantum computing.

Description

[Technical field]

[0001] The embodiments described herein relate generally to quantum computing applications. [Background technology]

[0002] Cryogenic ion traps (e.g., surface ion traps) are an emerging technology that enables the confinement of ions for applications in quantum computing, quantum sensing, quantum timing, and other applications in quantum technology. In operation, these ion traps use an input radio frequency drive signal at a relatively high voltage. However, operating such ion traps at cryogenic temperatures can result in undesirable power dissipation. What is needed is an improved solution to increase the efficiency of cryogenic ion trap systems. [Brief description of the drawings]

[0003] [Figure 1] FIG. 2 is an overhead view of a cryogenic RF resonator circuit board according to one embodiment. [Diagram 2] FIG. 2 is an overhead view of a cryogenic RF resonator inductor according to one embodiment. [Diagram 3] FIG. 2 is a perspective view of a cryogenic RF resonator open enclosure according to one embodiment. [Figure 4] FIG. 2 illustrates a top view of a cryogenic RF resonator open enclosure according to one embodiment. [Diagram 5] FIG. 2 is a perspective view of a cryogenic RF resonator closure enclosure according to one embodiment. [Figure 6] FIG. 1 is a block diagram of a cryogenic RF resonator method according to one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0004] The present subject matter provides technical solutions for technical problems facing cryogenic ion traps by providing a cryogenic radio frequency (RF) resonator that is compact, monolithic, modular, and impedance matched to the cryogenic ion trap. The cryogenic RF resonators described herein are power efficient, properly impedance matched to the RF source, have a stable gain profile, and are compatible with cryogenic and ultra-high vacuum environments. In some embodiments, the gain profile is selected such that the cryogenic RF resonator acts as a cryogenic RF amplifier. This cryogenic RF resonator improves the performance of the ion trap by reducing or minimizing the heat load and reducing or minimizing undesirable noise that may inadvertently drive the trapped ions. These features of the present subject matter improve the performance of atomic clocks and mass spectrometers, and in particular quantum computing. In one embodiment, the cryogenic RF resonator and ion trap package can be used to store quantum information using qubits (e.g., stable electronic states of ions), which can be processed and transferred via the collective quantized motion of the ions. One or more ion-specific lasers can be applied to the ions to induce coupling of the ions between qubit states or to induce coupling between internal qubit states and external motional states.

[0005] The cryogenic RF resonators described herein provide various advantages. The cryogenic RF resonators can dissipate reduced power in the cryostat (e.g., cryogenic chamber), such as power levels of about 100 mW or less. This reduces the power required to operate the cryostat, particularly for cryostats operated from about 4 Kelvin to about 77 Kelvin. The cryogenic RF resonators can provide gain profiles that provide state-of-the-art stability without the use of active feedback in the circuit. As described below, the selection of capacitance and inductance values ​​can provide a desired gain profile without the need for active feedback in the circuit. The cryogenic RF resonators can provide a small and modular form factor. This allows for the use of the cryogenic RF resonators with a variety of ion traps. The cryogenic RF resonators can provide an integrated voltage pick-off circuit. When the cryogenic RF resonators are used as amplifiers, this voltage pick-off circuit can be used to provide a gain profile that provides state-of-the-art stability. A choke circuit may be used to monitor the voltage gain of the amplifier.

[0006] The cryogenic RF resonator described herein offers various advantages over other RF resonators. In one embodiment, the cryogenic RF resonator provides an impedance-matched RF output to an RF source. In one embodiment, the cryogenic RF resonator offers an improved design including a form factor that is compact, modular, and monolithic (e.g., substantially solid and uniform). Some RF resonators may be realized using large helical resonators or using separate components attached directly to the ion trap circuit board. However, these RF resonators are not monolithic and are therefore sensitive to mechanical vibrations that reduce the stability of the circuit gain profile. In contrast, the cryogenic RF resonator includes a forming substrate (e.g., epoxy) to provide a monolithic circuit that reduces or eliminates sensitivity to mechanical vibrations. The cryogenic RF resonator is also compact and modular, providing the ability to use the cryogenic RF resonator to provide impedance-matched RF signals to a variety of ion trap devices.

[0007] The following description and drawings sufficiently illustrate the specific embodiments to enable those skilled in the art to understand the specific embodiments. Other embodiments may incorporate structural, logical, electrical, process, and other changes. Portions and features of various embodiments may be included in or substituted for those of other embodiments. The embodiments set forth in the claims encompass all available equivalents of those claims.

[0008] FIG. 1 is an overhead view of a cryogenic RF resonator circuit board 100, according to one embodiment. The circuit board 100 may include mounting holes 105 and 110 for fastening the circuit board 100 to an enclosure. The circuit board 100 may include various RF input and output ports, such as an RF input port 150, an RF input mount 145, an output port 155, and an RF output mount 125. The circuit board 100 may include an integrated voltage pick-off circuit that may be used to monitor voltage gain. In one embodiment, the voltage pick-off circuit includes surface mount components 115 and 120 along with a voltage pick-off port 160 and a voltage pick-off mount 130. The circuit board 100 may include various circuit components for modifying an input RF signal received at the RF input port 155, such as capacitors 135 and 140. These capacitors may be coupled with one or more inductors as shown in FIG. 2.

[0009] 2 is an overhead view of a cryogenic RF resonator inductor 200, according to one embodiment. The inductor 200 may include a conductive wire 205 within an insulating sheath 210. The wire 205 and sheath 210 may be wound around a dielectric core 215. The dielectric used for the dielectric core 215 may be selected to provide the desired dielectric constant and mechanical stability of the inductor coil. For example, the dielectric core 215 and the capacitors 135 and 140 may include materials that provide consistent dielectric properties (e.g., narrow values ​​of dielectric constant values) within cryogenic operating conditions, such as between about 4 Kelvin and about 77 Kelvin. The dielectric and other materials used for the inductor 200 and components of the circuit board 100 may be selected to provide stable properties over the temperature, voltage, and RF frequency ranges used in the operation of the cryogenic ion trap.

[0010] The impedance of inductor 200 and the capacitance of capacitors 135 and 140 may be selected to form an impedance matching circuit, such as an L-network formation. In one embodiment, a network analyzer may be used to determine the real and imaginary parts of the impedance of the ion trap, and the impedance of inductor 200 and the capacitance of capacitors 135 and 140 may be selected to match the ion trap impedance. For cryogenic applications, the real part of the ion trap impedance and the real part of the cryogenic resonator impedance are expected to change as the operating temperature is reduced. To address this temperature dependence of the real part of the impedance, multiple impedance measurements may be taken as the device cools and used to extrapolate impedance values ​​of the ion trap at various operating temperatures. Based on the measured and extrapolated impedance values ​​of the ion trap at various operating temperatures, the impedance of inductor 200 and the capacitance of capacitors 135 and 140 may be selected to match the ion trap impedance.

[0011] 3 is a perspective view of a cryogenic RF resonator open enclosure 300, according to one embodiment. The open enclosure may include a cavity in which the inductor is placed with the inductor contacts 390 exposed. The cavity may be filled with a thermally conductive matrix 380, such as epoxy. The matrix 380 may ensure that the inductor is stabilized to the enclosure 300, and the thermal conductivity of the matrix 380 may be selected to conduct heat away from the inductor to the enclosure 300, which in turn conducts the heat away to the cryogenic cooling system.

[0012] Enclosure 300 may be formed from a material that is thermally conductive and operates at cryogenic application temperatures. Enclosure 300 may include high purity copper, such as oxygen-free high thermal conductivity (OFHC) copper. Enclosure 300 may include thermally conductive exterior gold plating, such as on exterior surface 385. Enclosure 300 may include mounting surfaces 370 and 375 that may be used to position a circuit board. Enclosure 300 may include threaded mounting openings, such as threaded opening 365, that may be used with a bolt or other fastener through circuit board opening 305.

[0013] FIG. 4 is a top view of a cryogenic RF resonator open enclosure 400 according to one embodiment. The enclosure 400 may include a cryogenic RF resonator circuit board that may be fastened to the enclosure 400 through board openings 405 and 410. Inductor leads 490 may be routed from the inductor to corresponding contacts on the circuit board. A thermally conductive substrate 380 may be used to cover the inductor leads 490 to provide structural stability and thermal conductivity. One or more of the circuit board components 415 and 420 may be partially or completely covered with the substrate 380 to further improve structural stability and thermal conductivity. Other circuit board components 435, 440, and 465 may be left uncovered by the substrate 380 to provide user-changeable impedances. For example, the components 435, 440, and 465 may include capacitors of common or different capacitances, and one or more of the components 435, 440, and 465 may be removed or replaced with different components. In one embodiment, components 435, 440 and 465 may be replaced by user adjustable variable capacitors. This selection or modification of components 435, 440 and 465 can provide a desired capacitance, which can be used to modify the cryogenic RF resonator to provide an impedance that matches the ion trap.

[0014] 5 is a perspective view of a cryogenic RF resonator closure enclosure 500 according to one embodiment. The enclosure 500 includes a thermally conductive lower enclosure 585 and a thermally conductive upper enclosure 595, which may be fastened together using bolts or other fasteners 590. The closure enclosure 500 may include openings such as an RF output port 555 that connects the resonator with the ion trap, an RF input port 550, or a voltage pickoff port 560.

[0015] During operation, the cryogenic RF resonator in the enclosure 500 can be used to verify that the cryogenic RF resonator is impedance matched to the ion trap. For example, the cryogenic RF resonator may be connected to the ion trap, the cryogenic RF resonator and the ion trap may be cooled to a low cryogenic temperature (e.g., 4 Kelvin), and a network analyzer may be used to measure the power returning from the ion trap. This measured power can be , may be used to determine an internal quality factor (e.g., resonator loss measurement), which can be used to verify that the cryogenic RF resonator is properly impedance matched to the ion trap.

[0016] 6 is a block diagram of a cryogenic RF resonator method 600, according to one embodiment. Method 600 may include receiving 610 an input radio frequency (RF) signal via an RF input port at a cryogenic resonant circuit. The cryogenic resonant circuit may include an inductive device disposed at least partially within a thermally conductive substrate and a cryogenic capacitive device coupled to an inductor. Method 600 may include generating 620 an impedance-matched RF signal in the cryogenic resonant circuit based on the input RF signal. Method 600 may include providing 630 the impedance-matched RF signal to an external cryogenic device via an RF output port.

[0017] In one embodiment, the cryogenic resonant circuit functions as an amplifier circuit. Generating an impedance-matched RF signal in the cryogenic resonant circuit may include generating an impedance-matched amplified RF signal. Providing the impedance-matched RF signal may include providing the impedance-matched amplified RF signal to an external cryogenic device.

[0018] The cryogenic resonant circuit may be disposed within a thermally conductive enclosure. The thermally conductive enclosure may include thermally conductive high purity copper. The thermally conductive enclosure may include thermally conductive gold plating. The thermally conductive enclosure may include at least one thermally conductive surface configured to mate with a thermally conductive mounting substrate.

[0019] The cryogenic capacitive device may be configured to provide an adjustable capacitance, where the capacitance may be adjusted based on user input or based on other changes. In one embodiment, the method 600 may include receiving 640 a user-selectable capacitance input to provide an adjustable capacitance, where the user-selectable capacitance may include a user adjustment to a variable capacitor. In one embodiment, the cryogenic capacitive device may include a plurality of conductors, where each of the plurality of capacitors may be configured to be removable by a user to provide an adjustable capacitance. The capacitance may be adjusted to provide a desired impedance, such as to provide a desired impedance value. In one embodiment, the cryogenic capacitive device may include materials to provide consistent dielectric properties and other stable properties over the temperature, voltage, and RF frequency ranges used in the operation of the cryogenic ion trap.

[0020] The above detailed description includes references to the accompanying drawings, which form a part of the detailed description. The drawings show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are also referred to herein as "examples." Such examples may include elements in addition to those shown or described. However, the inventors also contemplate examples in which only those elements shown or described are provided. Moreover, the inventors also contemplate examples (or one or more aspects thereof) using any combination or permutation of those elements shown or described with respect to a particular example (or one or more aspects thereof), or with respect to other examples (or one or more aspects thereof) shown or described herein.

[0021] Example 1 is a cryogenic radio frequency resonator system comprising: an inductive device at least partially disposed within a thermally conductive substrate; a cryogenic capacitive device coupled to an inductor to form a cryogenic resonant circuit having an associated circuit impedance value; a radio frequency (RF) input port for sending an input RF signal to the cryogenic resonant circuit, where the cryogenic resonant circuit generates an impedance-matched RF signal; and an RF output port for providing the impedance-matched RF signal to an external cryogenic device. A wave resonator system.

[0022] In Example 2, the subject matter described in Example 1 optionally includes: the cryogenic resonant circuit includes an amplifier circuit; the amplifier circuit generates an impedance-matched amplified RF signal; and the RF output port provides the impedance-matched amplified RF signal to an external cryogenic device.

[0023] In example 3, the subject matter of any one or more of examples 1-2 optionally includes a thermally conductive enclosure.

[0024] In Example 4, the subject matter described in Example 3 optionally includes, wherein the thermally conductive enclosure includes thermally conductive high purity copper.

[0025] In example 5, the subject matter described in any one or more of examples 3-4 optionally includes, wherein the thermally conductive enclosure includes thermally conductive gold plating.

[0026] In Example 6, the subject matter described in any one or more of Examples 3-5 optionally includes, wherein the thermally conductive enclosure includes at least one thermally conductive surface configured to mate with a thermally conductive mounting substrate.

[0027] In Example 7, the subject matter described in any one or more of Examples 1-6 optionally includes, wherein the cryogenic capacitive device includes a cryogenic capacitive material.

[0028] In Example 8, the subject matter described in any one or more of Examples 1-7, optionally including the cryogenic capacitive device being configured to provide an adjustable capacitance, the adjustable capacitance varying an amplifier impedance.

[0029] In Example 9, the subject matter described in Example 8 optionally includes, wherein the cryogenic capacitive device includes a plurality of conductors, each of the plurality of capacitors configured to be removable to provide an adjustable capacitance.

[0030] In Example 10, the subject matter described in any one or more of Examples 8-9 optionally includes, wherein the cryogenic capacitive device includes a user-selectable capacitance to provide an adjustable capacitance.

[0031] Example 11 is a cryogenic high frequency resonator method including receiving an input radio frequency (RF) signal via an RF input port in a cryogenic resonant circuit, the cryogenic resonant circuit including an inductive device at least partially disposed within a thermally conductive substrate and a cryogenic capacitive device coupled to an inductor; generating an impedance-matched RF signal in the cryogenic resonant circuit based on the input RF signal; and providing the impedance-matched RF signal to an external cryogenic device via an RF output port.

[0032] In Example 12, the subject matter described in Example 11 optionally includes, wherein the cryogenic resonant circuit includes an amplifier circuit, and wherein generating the impedance-matched RF signal in the cryogenic resonant circuit includes generating an impedance-matched amplified RF signal, and wherein providing the impedance-matched RF signal includes providing the impedance-matched amplified RF signal to an external cryogenic device.

[0033] In Example 13, the subject matter described in any one or more of Examples 11-12 is a cryogenic co-stimulator. The oscillator circuit is optionally disposed within a thermally conductive enclosure.

[0034] In Example 14, the subject matter described in Example 13 optionally includes, wherein the thermally conductive enclosure includes thermally conductive high purity copper.

[0035] In Example 15, the subject matter of any one or more of Examples 13-14 optionally includes, wherein the thermally conductive enclosure includes thermally conductive gold plating.

[0036] In Example 16, the subject matter described in any one or more of Examples 13-15 optionally includes, wherein the thermally conductive enclosure includes at least one thermally conductive surface configured to mate with a thermally conductive mounting substrate.

[0037] In Example 17, the subject matter of any one or more of Examples 11-16 optionally includes, wherein the cryogenic capacitive device includes a cryogenic capacitive material.

[0038] In Example 18, the subject matter described in any one or more of Examples 11-17, optionally including the cryogenic capacitive device being configured to provide an adjustable capacitance, the adjustable capacitance varying an amplifier impedance.

[0039] In Example 19, the subject matter described in Example 18 optionally includes, wherein the cryogenic capacitive device includes a plurality of conductors, each of the plurality of capacitors configured to be removable to provide an adjustable capacitance.

[0040] In Example 20, the subject matter of any one or more of Examples 18-19 optionally includes receiving a user-selectable capacitance to provide an adjustable capacitance.

[0041] Example 21 is one or more machine-readable media comprising instructions that, when executed by a computing system, cause the computing system to perform any of the methods described in Examples 11-20.

[0042] Example 22 is an apparatus including a means for carrying out any one of the methods described in Examples 11 to 20.

[0043] Example 23 is a machine-readable storage medium comprising a plurality of instructions that, when executed on a processor of the device, cause the device to receive an input radio frequency (RF) signal via an RF input port at a cryogenic resonant circuit, the cryogenic resonant circuit including an inductive device disposed at least partially within a thermally conductive substrate and a cryogenic capacitive device coupled to the inductor, generate an impedance-matched RF signal in the cryogenic resonant circuit based on the input RF signal, and provide the impedance-matched RF signal to an external cryogenic device via the RF output port.

[0044] In Example 24, the subject matter described in Example 23, wherein the cryogenic resonant circuit includes an amplifier circuit, optionally further including instructions for causing the device to generate an impedance-matched amplified RF signal, and instructions for causing the device to provide the impedance-matched amplified RF signal to an external cryogenic device.

[0045] In Example 25, the subject matter of any one or more of Examples 23-24 optionally includes, wherein the cryogenic resonant circuit is disposed within a thermally conductive enclosure.

[0046] In Example 26, the subject matter described in Example 25 optionally includes, wherein the thermally conductive enclosure includes thermally conductive high purity copper.

[0047] In Example 27, the subject matter of any one or more of Examples 25-26 optionally includes, wherein the thermally conductive enclosure includes thermally conductive gold plating.

[0048] In Example 28, the subject matter described in any one or more of Examples 25-27 optionally includes, wherein the thermally conductive enclosure includes at least one thermally conductive surface configured to mate with a thermally conductive mounting substrate.

[0049] In Example 29, the subject matter of any one or more of Examples 23-28 optionally includes, wherein the cryogenic capacitive device includes a cryogenic capacitive material.

[0050] In Example 30, the subject matter described in any one or more of Examples 23-29, optionally including the cryogenic capacitive device being configured to provide an adjustable capacitance, the adjustable capacitance varying an amplifier impedance.

[0051] In Example 31, the subject matter described in Example 30 optionally includes, wherein the cryogenic capacitive device includes a plurality of conductors, and each of the plurality of capacitors is configured to be removable to provide an adjustable capacitance.

[0052] In Example 32, the subject matter described in any one or more of Examples 30 to 31 optionally further includes instructions that cause the device to receive a user-selectable capacitance to provide an adjustable capacitance.

[0053] Example 33 is a cryogenic high frequency resonator apparatus comprising: means for receiving an input radio frequency (RF) signal via an RF input port in a cryogenic resonant circuit, the cryogenic resonant circuit including an inductive device at least partially disposed within a thermally conductive substrate and a cryogenic capacitive device coupled to an inductor; means for generating an impedance-matched RF signal in the cryogenic resonant circuit based on the input RF signal; and means for providing the impedance-matched RF signal to an external cryogenic device via an RF output port.

[0054] In Example 34, the subject matter described in Example 33 optionally includes, wherein the cryogenic resonant circuit includes an amplifier circuit, and wherein generating an impedance-matched RF signal in the cryogenic resonant circuit includes means for generating an impedance-matched amplified RF signal, and wherein providing the impedance-matched RF signal includes means for providing the impedance-matched amplified RF signal to an external cryogenic device.

[0055] In Example 35, the subject matter of any one or more of Examples 33-34 optionally includes the cryogenic resonant circuit being disposed within a thermally conductive enclosure.

[0056] In Example 36, the subject matter described in Example 35 optionally includes, wherein the thermally conductive enclosure includes thermally conductive high purity copper.

[0057] In Example 37, the subject matter of any one or more of Examples 35-36 optionally includes, wherein the thermally conductive enclosure includes thermally conductive gold plating.

[0058] In example 38, the subject matter of any one or more of examples 35-37 is further characterized in that the thermally conductive enclosure is configured to mate with at least one thermally conductive mounting substrate. Optionally including a conductive surface.

[0059] In Example 39, the subject matter of any one or more of Examples 33-38 optionally includes, wherein the cryogenic capacitive device includes a cryogenic capacitive material.

[0060] In Example 40, the subject matter described in any one or more of Examples 33-39, optionally including the cryogenic capacitive device being configured to provide an adjustable capacitance, the adjustable capacitance varying an amplifier impedance.

[0061] In Example 41, the subject matter described in Example 40 optionally includes, wherein the cryogenic capacitive device includes a plurality of conductors, and each of the plurality of capacitors is configured to be removable to provide an adjustable capacitance.

[0062] In example 42, the subject matter of any one or more of examples 40-41 optionally includes means for receiving a user-selectable capacitance to provide an adjustable capacitance.

[0063] Example 43 is one or more machine-readable media containing instructions that, when executed by a machine, cause the machine to perform any of the operations recited in Examples 1-42.

[0064] Example 44 is an apparatus including a means for executing any of the operations described in Examples 1 to 42.

[0065] The forty-fifth embodiment is a system that executes any of the operations described in the first to forty-second embodiments.

[0066] The forty-sixth embodiment is a method for performing any of the operations described in the first to forty-second embodiments.

[0067] In this document, the terms "a" or "an" include one or more, as is common in patent documents, independent of any other instances or uses of "at least one" or "one or more." In this document, the term "or" is used to refer to non-exclusive or "A or B" including "A but not B," "B but not A," and "A and B," unless otherwise indicated. In this document, the terms "including" and "in which" are used as the plain English equivalents of the respective terms "comprising" and "wherein." Also, in the following claims, the terms "including" and "comprising" are open-ended, i.e., a system, device, item, composition, composition, or process that includes elements in addition to those recited after such term in a claim is still deemed to be within the scope of that claim. Moreover, in the following claims, the terms "first," "second," and "third," etc. are used merely as labels and are not intended to impose numerical requirements on their objects.

[0068] The above description is intended to be illustrative and not limiting. For example, the above examples (or one or more aspects thereof) may be used in combination with each other. Other embodiments may be used, such as by one of ordinary skill in the art upon reviewing the above description. The Abstract is provided to enable the reader to quickly ascertain the nature of the technical disclosure. It will be understood that it will not be used to interpret or limit the scope or meaning of the claims. In the above Detailed Description, various features may be grouped together to streamline the disclosure. This should not be construed as intending that an unclaimed disclosed feature is essential to any claim. Rather, the subject matter of the present invention is directed to the specific disclosed features. Any aspect of the present invention may be comprised in less than all features of a particular embodiment. Accordingly, the following claims are incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment, and it is contemplated that such embodiments can be combined with each other in various combinations or permutations. The scope should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims

1. A cryogenic radio frequency resonator system, comprising: an inductive device at least partially embedded in a substrate in an enclosure having a cavity filled with the substrate, the substrate having a thermal conductivity selected to conduct heat from the inductive device to the enclosure and configured to reduce or eliminate susceptibility to mechanical vibrations; a cryogenic capacitive device attached to a circuit board at least partially embedded within the substrate and coupled to the inductive device to form a cryogenic resonant circuit; a radio frequency (RF) input port for transmitting an input RF signal to the cryogenic resonant circuit, the cryogenic resonant circuit generating an impedance-matched amplified RF signal by voltage amplifying the input RF signal; an RF output port for delivering the impedance matched amplified RF signal to an ion trap device; 1. An extremely low frequency resonator system comprising:

2. 2. The cryogenic high frequency resonator system of claim 1, the ion trapping device includes a surface ion trap, and the impedance matched amplified RF signal is provided to the surface ion trap. Cryogenic radio frequency resonator system.

3. 2. The cryogenic radio frequency resonator system of claim 1, further comprising a thermally conductive enclosure as the enclosure.

4. receiving an input radio frequency (RF) signal via an RF input port with a cryogenic resonant circuit, the cryogenic resonant circuit including an inductive device at least partially embedded in a substrate in an enclosure having a cavity filled with the substrate, and a cryogenic capacitive device at least partially mounted within the substrate to a circuit board and coupled to the inductive device, the substrate having a thermal conductivity selected to conduct heat from the inductive device to the enclosure and configured to reduce or eliminate susceptibility to mechanical vibration; the cryogenic resonant circuit generating an impedance-matched amplified RF signal by voltage amplifying the input RF signal; outputting the impedance matched amplified RF signal to an ion trap device via an RF output port; A method comprising:

Images