MEMS element and its manufacturing method

Abstract

The present invention provides a MEMS device including: a substrate 1 having an opening 1a; a vibrating membrane 3 formed on the substrate 1 via an insulating film 2, a slit 3a being intermittently formed along an edge in the peripheral portion of the vibrating membrane 3; and a back plate 5 that is formed so as to be fixed to a spacer 4 formed on the periphery of the substrate 1, multiple acoustic holes 5b being formed in the central portion of the back plate 5. The back plate 5 has an etching hole 5c located on the outer side of the multiple acoustic holes 5b and closer to the edge than the outermost end of the slit of the vibrating membrane 3 in plan view. The slit 3a is formed so as to be located above a portion of the substrate 1 in which the opening 1a is not formed. An edge 3d of the vibrating membrane 3 and the insulating film 2 under the vibrating membrane 3 are apart from the lower end of the spacer 4, and the insulating film under the vibrating membrane 3 is etched from the edge 3d and the slit 3a of the vibrating membrane 3 to positions below the vibrating membrane 3.

Description

[Technical field]

[0001] The present disclosure relates to a MEMS element, and more particularly to a capacitive MEMS element used as a microphone, various sensors, a switch, etc., and a manufacturing method thereof. [Background technology]

[0002] 7, a MEMS element (microphone) 200 of the related art is configured such that a diaphragm 30 made of a conductor is provided on a silicon substrate 10 via an insulating film 20, and a backplate 50 having a conductor portion (fixed electrode 50a) is laminated via a spacer 40. The backplate 50 is formed so as not to deform, and a plurality of acoustic holes 50b are formed in a portion facing the diaphragm 30. For example, the diaphragm 30 vibrates due to sound pressure propagated through the acoustic holes 50b, and the capacitance between the backplate 50 and the diaphragm 30 changes. The change in capacitance is extracted as an electric signal and transmitted to a speaker or the like (not shown).

[0003] Since such a MEMS microphone 200 detects a very weak change in capacitance, the sensitivity of the microphone decreases if the parasitic capacitance between the diaphragm 30 and the back plate 50 is large. For this reason, for example, Patent Document 1 discloses a structure in which the conductor portion of the diaphragm (diaphragm 30) is made smaller than the diaphragm, and the diaphragm and the silicon oxide film thereunder are respectively separated into an inner region and an outer region as shown in FIG. 7(b) of Patent Document 1, thereby preventing the formation of unnecessary capacitance between the diaphragm 30 and the back plate 50. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2007-208548 A Summary of the Invention [Problem to be solved by the invention]

[0005] In order to improve the sensitivity of MEMS microphones, efforts have been made to reduce the effects of the parasitic capacitance described above. However, even if the parasitic capacitance is suppressed, there is still a problem that microphone characteristics such as sensitivity vary.

[0006] The inventors of the present invention have conducted extensive research into the causes of the variation in the characteristics of this MEMS microphone. As a result, they have found that the vibration membrane is also stressed by the influence of internal stress in each film, such as the sacrificial layer film that serves as a spacer, the back plate, and the insulating film, resulting in variation in the magnitude of vibration. In addition, they have found that when housing a MEMS microphone in a package, the MEMS microphone is fixed to a printed circuit board or the like using resin, and therefore is also influenced by the internal stress of these materials and the difference in linear expansion coefficient due to connection through the board.

[0007] Therefore, an object of the present disclosure is to provide a MEMS element that exhibits more stable performance and can achieve high sensitivity. [Means for solving the problem]

[0008] One embodiment of a MEMS element of the present disclosure includes a substrate having an opening, a vibration membrane formed on the substrate via an insulating film, the vibration membrane having slits intermittently formed along the edge of the peripheral portion, and a back plate fixed to a spacer formed on the peripheral portion of the substrate and having a plurality of acoustic holes in its center, the back plate having an etching hole at the outer periphery of the plurality of acoustic holes and at a position closer to the edge than the outermost edge of the slits of the vibration membrane in a planar view, the slits being formed so as to be positioned above a portion of the substrate where no openings are formed, the edge of the vibration membrane and the insulating film below the vibration membrane are spaced from the lower edge of the spacer, the edge of the insulating film below the vibration membrane on the spacer side is positioned closer to the slit than the edge of the vibration membrane, and the edge of the insulating film below the vibration membrane on the slit side is positioned closer to the spacer than the slit.

[0009] One embodiment of a manufacturing method of a MEMS element of the present disclosure includes the steps of forming an insulating film on a substrate, forming a conductor film on the insulating film, patterning the peripheral end portion and forming slits in the peripheral portion of the conductor film to form a vibration membrane, forming a sacrificial layer on the vibration membrane, forming a backplate film including a fixed electrode on the sacrificial layer, forming a backplate having a plurality of acoustic holes in the backplate film and etching holes on the periphery of the plurality of acoustic holes, forming an opening in the substrate located below the center of the vibration membrane, and immersing the substrate in an etching solution to form an opening in the peripheral portion of the sacrificial layer. and removing a part of the insulating film from the outermost periphery side of the slit in the vibrating membrane and the end side of the vibrating membrane so as to leave only a part of the insulating film between the outermost periphery of the slit and the end of the vibrating membrane, and removing the insulating film under the vibrating membrane so as to leave only a part of the insulating film between the outermost periphery of the slit and the end of the vibrating membrane, wherein the etching hole is formed on the peripheral edge side of the back plate rather than the outermost periphery of the slit in the vibrating membrane in a plan view, and the insulating film remaining under the vibrating membrane is left in a ring shape that holds the vibrating membrane by adjusting at least one of the position of the etching hole, the size of the etching hole, the etching time, and the concentration of the etching solution. Effect of the Invention

[0010] According to the MEMS element of the present disclosure, the diaphragm and the insulating film that holds the diaphragm are separated from the spacer portion, and the diaphragm is held to the substrate via an insulating film of a minimum width, so that the stress of the diaphragm is not affected by other members, such as the spacer or back plate, and even if the substrate is fixed by resin or the like due to the housing, the effect of the stress generated in the substrate on the diaphragm is suppressed. As a result, a microphone with stable performance is obtained.

[0011] Furthermore, according to the manufacturing method of the MEMS element disclosed herein, by forming an etching hole at a position outside the acoustic hole in the back plate and outside the outermost slit formed in the vibration membrane in a planar view, it is possible to suppress the effect of stress on the vibration membrane and optimize the retention of the vibration membrane and stable performance by adjusting at least one of the position of the etching hole, the size of the etching hole, the etching time, and the concentration of the etching solution in the insulating film removal process. [Brief description of the drawings]

[0012] [Figure 1] 1 is a schematic cross-sectional view of a MEMS element according to an embodiment of the present disclosure. [Diagram 2] 2 is a schematic plan view of a vibration membrane (movable electrode) of the MEMS element of FIG. 1, as viewed from the substrate side. [Diagram 3] 2 is a schematic plan view of an insulating film of the MEMS element of FIG. 1. [Figure 4A] 2 is an explanatory diagram of a manufacturing process of the MEMS element of FIG. 1. [Figure 4B] 2 is an explanatory diagram of a manufacturing process of the MEMS element of FIG. 1. [Figure 4C] 2 is an explanatory diagram of a manufacturing process of the MEMS element of FIG. 1. [Figure 4D] 2 is an explanatory diagram of a manufacturing process of the MEMS element of FIG. 1. [Figure 4E] 2 is an explanatory diagram of a manufacturing process of the MEMS element of FIG. 1. [Figure 4F] 2 is an explanatory diagram of a manufacturing process of the MEMS element of FIG. 1. [Figure 4G] 2 is an explanatory diagram of a manufacturing process of the MEMS element of FIG. 1. [Figure 4H] 2 is an explanatory diagram of a manufacturing process of the MEMS element of FIG. 1. [Diagram 5] 4 is a schematic cross-sectional view of a MEMS element according to another embodiment of the present disclosure. FIG. [Figure 6A] 11A to 11C are schematic diagrams illustrating the results of a simulation showing the effect of stress on a vibrating membrane. [Figure 6B]11A to 11C are schematic diagrams illustrating the results of a simulation showing the effect of stress on a vibrating membrane. [Figure 7] FIG. 1 is a schematic cross-sectional view of a MEMS element according to a related art. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Next, embodiments of the MEMS element of the present disclosure and implementations of the manufacturing method of the MEMS element of the present disclosure will be described with reference to the drawings, but the present disclosure is not limited to these embodiments and implementations.

[0014] 1, one embodiment of the MEMS element of the present disclosure includes a substrate 1 with an opening 1a, a vibrating membrane 3 formed on the substrate 1 via an insulating film 2, with slits 3a and 3b intermittently formed along an end 3d on the periphery, and a back plate 5 fixed to a spacer 4 formed on the periphery of the substrate 1 and having a plurality of acoustic holes 5b in the center. The back plate 5 has an etching hole 5c on the outer periphery of the plurality of acoustic holes 5b and on the end side of the outermost end of the outer slit 3a of the vibrating membrane 3 in a plan view, and the slits 3a and 3b are formed so as to be located on a portion of the substrate 1 where the opening 1a is not formed, the end 3d of the vibrating membrane 3 and the insulating film 2 below the vibrating membrane 3 are separated from the lower end of the spacer 4, and the insulating film 2 below the vibrating membrane 3 is etched from the end 3d of the vibrating membrane 3 and the outer slit 3a to the bottom of the vibrating membrane 3, with the ends of the insulating film 2 each recessing inward.

[0015] For the purpose of explanation, Figures 1 to 3 show the peripheral portion of the vibrating membrane 3, the vicinity of the slits 3a and 3b, and the insulating film 2 below the vibrating membrane 3 larger than the entire MEMS element and other parts, and do not faithfully represent the proportions of each component in an actual MEMS element.

[0016] As described above, the inventors of the present invention have conducted extensive research into the reasons for variations in the sensitivity and other characteristics of MEMS microphone 100, and have found that this is due to residual stress in diaphragm 3, which varies among elements, resulting in subtle differences in the vibration of diaphragm 3 even when the same sound pressure is applied. The inventors have found that the differences in residual stress are due to various factors, such as variations in the thicknesses of insulating film 2, spacer 4, and back plate 5 during the manufacturing process, and the environment during the manufacturing process, and that the residual stress is also influenced by internal stresses of materials, such as resin, used when assembling MEMS element 100 into a package or the like.

[0017] Therefore, the inventors of the present invention considered that it is impossible to make these variations uniform, and considered suppressing the influence of the residual stress of the diaphragm 3 by preventing these stresses from being transmitted to the diaphragm 3. To achieve this, it is necessary to cut off the influence of the substrate 1 and its surrounding members, such as the insulating film 2, the spacer 4, and the back plate 5, on the diaphragm 3. By separating and making the diaphragm 3 independent from the spacer 4 and its lower part, and by making contact with the substrate 1 to a minimum extent, the inventors succeeded in suppressing the variation in the characteristics of the MEMS microphone and the like. In fact, it was clear from simulations that the residual stress of the diaphragm 3 changes depending on the area of ​​the insulating film 2 that bonds the diaphragm 3 to the substrate 1, and affects the degree of vibration of the diaphragm 3 (FIGS. 6A and 6B). In FIG. 6A and FIG. 6B, the degree of the influence of the stress on the diaphragm 3 is shown by the shade of dots, and the darker the shade, the greater the influence of the stress. By comparing Figure 6A, in which almost the entire surface between the vibration membrane 3 and the substrate 1 is bonded by the insulating film 2, with Figure 6B, in which the vibration membrane 3 and the substrate 1 are bonded only by an insulating film 2 of a width necessary to hold the vibration membrane 3, as in Figure 1, it can be seen that the magnitude and distribution of the stress experienced by the vibration membrane 3 differs depending on the area of ​​the insulating film 2 bonding the vibration membrane 3 to the substrate 1.

[0018] Specifically, the diaphragm 3 is joined to the substrate 1 at its periphery via the insulating film 2. Since the diaphragm 3 vibrates in response to pressure changes due to sound, if it is detached from the substrate 1, it will no longer be able to function as the diaphragm 3. From this viewpoint, the diaphragm 3 needs to be sufficiently fixed to the substrate 1 via the insulating film 2. Therefore, it is preferable that the width of the insulating film 2 remaining under the diaphragm 3 is as wide as possible so that the diaphragm 3 is connected to the substrate 1. However, as described above, the inventors have found that if this connection portion, i.e., the width of the remaining insulating film 2, is too wide, the stress of the substrate 1 is transmitted to the diaphragm 3 via the insulating film 2, and the vibration characteristics of the diaphragm 3 are affected. Therefore, in this embodiment, the remaining insulating film 2 is formed to have a minimum width (see L1 in FIG. 3) for holding the diaphragm 3, which varies depending on the type of the MEMS element 100, for example, about 5 μm for a small microphone, and is formed to have a portion that is wider than the minimum width (see L2 in FIG. 3) by about 1 to 3 μm in order to reinforce the joint, rather than the entire periphery.

[0019] In other words, in this embodiment, the insulating film under the vibration membrane 3 is etched from the openings (the end 3d of the vibration membrane 3 and the outer slit 3a), so that the width (L1 in FIG. 3) of the insulating film 2 is narrowed by etching from the outer slit 3a in the portion where the outer slit 3a is located, and since etching does not progress much between the intermittently formed outer slits 3a, the width (L2 in FIG. 3) of the remaining insulating film 2 is relatively wide, and while exerting a holding force for holding the vibration membrane 3, the length of the insulating film 2 in the circumferential direction in that portion is short, so that the transmission of stress from the substrate 1 can be suppressed. Therefore, it is characterized in that the width of the insulating film 2 under the vibration membrane 3 is adjusted while adjusting the etching conditions when etching the sacrificial layer 41 and the insulating film 2.

[0020] In this manner, adjustment of the etching conditions for controlling the width of the insulating film 2 to a few μm or less can be achieved by adjusting any of the concentration of the etching solution, the position and size of the etching hole 5c, the etching time, etc., which are prone to variation, depending on the type, size, and each production lot of the MEMS element 100.

[0021] The substrate 1 of this embodiment can be made of a material having mechanical properties as a support substrate, such as single crystal silicon. However, it is not limited to a silicon substrate, and other semiconductor substrates such as compound semiconductors, SOI substrates, etc. can also be used. There is no particular limitation on the shape.

[0022] The insulating film 2 is an oxide film (SiO2) with a thickness of about 0.2 to 1 μm formed on a silicon substrate, and is formed by oxidizing the silicon substrate or by depositing it by a CVD method or the like. The insulating film 2 is not limited to an oxide film, and may be a nitride film, but an oxide film is preferable because it is easily etched. If the insulating film 2 is too thick, the stress will affect the vibration film 3, so it is preferable that it is as thin as possible.

[0023] The insulating film 2 is removed below the vibrating part of the vibrating membrane 3, and is connected to the substrate 1 only at a part of the periphery of the vibrating membrane 3. As described above, the insulating film 2 remains between the vibrating membrane 3 and the substrate 1 in as narrow an area as possible so as not to transmit the stress generated in the substrate 1 to the vibrating membrane 3. As an example, as shown in FIG. 3, which is a plan view of the insulating film 2 side cut at the interface between the substrate 1 and the insulating film 2, the insulating film 2 is formed in a ring shape by removing the inner side from the vicinity of the outer slit 3a of the vibrating membrane 3 and forming a dividing groove 2a separating the peripheral part from the outer slit 3d of the vibrating membrane 3. As described later, this ring-shaped insulating film 2 is etched down to the lower side of the vibrating membrane 3 during etching. Therefore, the end 3d side of the vibrating membrane 3 and the end of the outer slit 3a on the spacer 4 side are also etched. However, etching does not progress easily between the slits of the outer slits 3a that are formed intermittently, and the insulating film 2 remains protruding toward the center side as shown in FIG. 3. In other words, the width of the insulating film 2 remaining in a ring shape is not uniform, and the width L1 of the insulating film 2 in the portion of the outer slit 3a of the vibrating membrane 3 is narrower than the width L2 of the insulating film 2 between the slits of the outer slits 3a, resulting in an uneven shape at the inner peripheral edge of the insulating film 2. The relationship between the width L1 of the insulating film 2 in the vicinity of the outer slits 3a and the width L2 of the insulating film 2 between the slits of the outer slits 3a is preferably such that L1 is approximately 3 / 5 to 1 / 2 of L2.

[0024] As shown in FIG. 3, a protruding protrusion 2b is formed on the inner circumference of the ring-shaped insulating film 2, and the protrusion 2b is also bonded to the vibration film 3. However, the circumferential length of the protrusion 2b, i.e., the width of the protrusion 2b, is very small. Therefore, even if stress is applied to the substrate 1, the force that transmits the stress to the vibration film 3 is very small. On the other hand, the width L1 of the ring-shaped insulating film 2 is formed to be as small as possible. Therefore, when the width of the insulating film 2 is L1 over the entire circumference, the vibration film 3 may not be held sufficiently. However, in this embodiment, even in such a case, the vibration film 3 is held reliably by the protrusion 2b being bonded to the vibration film 3. In other words, the protrusion 2b contributes to holding the vibration film 3 while suppressing the transmission of stress from the substrate 1, and the width L1 of the part of the ring-shaped insulating film 2 that is not the protrusion 2b can be made as small as possible.

[0025] The diaphragm 3 is a movable electrode film formed by patterning a conductive film using a conductive polysilicon film or the like. For example, air vibrations due to sound pressure are transmitted to the diaphragm 3 through the fixed electrode 5a and the acoustic holes 5b formed in the back plate 5, causing the diaphragm 3 to vibrate, and the resulting change in capacitance between the diaphragm 3 and the fixed electrode 5a is converted into an electric signal and transmitted to the outside through an extraction electrode (not shown). In the example shown in FIG. 1, the diaphragm 3 is characterized in that it is separated from the lower part of the spacer 4. Even if a part of the conductive film is present under the spacer 4, a separating groove is formed, and the part exposed toward the center side from the separating groove is set as the end of the diaphragm 3. In other words, even if the conductive film separated by the separating groove remains under the spacer 4, the conductive film remaining under the spacer 4 does not have any function, so there is no particular need for it. In this specification, the term "diaphragm" essentially means the part located in a position opposite to the fixed electrode 5a, and the end of this part is called the end 3d of the diaphragm 3.

[0026] The diaphragm 3 has outer slits 3a and inner slits 3b formed intermittently along its periphery along the end 3d. The slits may be formed in one revolution or in three or more revolutions. The shape and size of the slits 3a and 3b, and the interval between the intermittently formed slits 3a and 3b can be determined in consideration of various factors such as the sensitivity of the MEMS element, the stability of the diaphragm, the strength of the diaphragm, the sensitivity of the microphone, and the distortion of the electrical signal. By forming the slits 3a and 3b, the diaphragm becomes more susceptible to vibration even with slight acoustic pressure, improving the sensitivity.

[0027] The slits 3a and 3b are formed so as to be located above a portion of the substrate 1 where the opening 1a is not formed. If the slits 3a and 3b are formed at a position exposed to the opening 1a of the substrate 1, the acoustic resistance is significantly reduced, and in a MEMS element having a small opening 1a, the sensitivity in the low frequency range is significantly reduced. As shown in FIG. 1, by forming the slits 3a to be located above a portion of the substrate 1 where the opening 1a is not formed, the acoustic resistance can be increased by utilizing the space between the vibration membrane 3 and the substrate 1. This space can be formed by etching the insulating film 2 by the etching solution penetrating from the slits 3a and 3b when etching the sacrificial layer 41 (see FIG. 4H) during the manufacture of the MEMS element. In FIG. 2, the slits 3a and 3b are provided around the two circumferences, but in such a structure, the etching solution may not easily penetrate between the slits of the inner slits 3b, and etching residue may occur. In order to prevent this, an embodiment can be adopted in which an etching hole 3c is formed between the slits of the inner slits 3b as shown in FIG. 2.

[0028] That is, since the inner slits 3b are also formed on the substrate 1, the etching solution from the openings 1a of the substrate 1 does not penetrate unless the insulating film 2 is removed, and the etching solution from the inner slits 3b does not easily penetrate between the slits of the inner slits 3b. The size of the etching holes 3c is determined according to the spacing of the inner slits 3b so as not to leave any etching residue.

[0029] Furthermore, since the space between the vibration membrane 3 and the substrate 1 formed by removing the insulating film 2 is very narrow, a phenomenon called sticking, in which the vibration membrane 3 and the substrate 1 are attracted to each other during etching, may occur, and if such a phenomenon occurs, the MEMS element 100 may not function. To prevent this sticking, a bump 3e can be provided on the vibration membrane 3. Taking into consideration misalignment, the bump 3e may be provided not only on the outside of the opening 1a but also on the inside of the opening 1a. The bump 3e does not need to be shaped like a continuous ring, and may have projections scattered around the circumference as shown in FIG.

[0030] The spacer 4 is formed by stacking a sacrificial layer such as silicon oxide and then etching away the center after the backplate 5 is formed, and is positioned between the backplate 5 and the substrate 1 to form a space between the fixed electrode 5a and the vibration membrane 3, which serves as the movable electrode.

[0031] The fixed electrode 5a is formed by patterning a conductive film made of a conductive polysilicon film or the like, and is disposed at a position corresponding to the vibrating membrane 3 which serves as the movable electrode. The area of ​​the fixed electrode 5a is optimized depending on how the vibrating membrane 3 vibrates.

[0032] The back plate 5 is formed by laminating a silicon nitride or a multi-layer film of silicon nitride and silicon oxide on a fixed electrode 5a, and has a plurality of acoustic holes 5b in the center together with the fixed electrode 5a. The acoustic holes 5b are for transmitting sound pressure to the vibration membrane 3, and are formed in a position facing the vibration membrane 3. The back plate 5 has etching holes 5c on the outer periphery of the plurality of acoustic holes 5b, and when the sacrificial layer 41 (see FIG. 4H) and the insulating film 2 are etched through these, the insulating film 2 exposed at the end 3d of the vibration membrane 3 is also etched. At this time, the insulating film 2 is divided into the insulating film 2 under the vibration membrane 3 and the insulating film at the lower end of the spacer 4. In addition, the insulating film 2 under the vibration membrane 3 near the end 3d of the vibration membrane 3 and the outer slit 3a is etched. The degree and balance of etching under the insulating film 2 on the lower side of the vibration membrane 3 can be adjusted by the positional relationship of the etching holes 5c to the end 3d of the vibration membrane 3 and the outer slit 3a, the size of the etching holes 5c, and the like.

[0033] The etching hole 5c is formed to etch the sacrificial layer 41 and the insulating film 2, and has a different function from the acoustic hole 5b. Therefore, the formation location of the etching hole 5c is closer to the edge of the substrate 1 than the outer slit 3a, and is a position where the vibration membrane 3 is joined to the substrate 1 via the insulating film 2, and is not a hole that contributes to the vibration of the vibration membrane 3. Rather, the formation location is determined to optimize the etching of the sacrificial layer 41 and the etching below the vibration membrane 3. That is, by adjusting the distance between the outer slit 3a and the end 3d of the vibration membrane 3 and the etching hole 5c in this positional relationship, the insulating film 2 below the vibration membrane 3 is configured to remain in a ring shape having a protrusion 2b at the inner peripheral end between the slits 3a by isotropically removing the end 3d side of the vibration membrane 3 and the inner peripheral side of the outer slit 3a from the slit 3a.

[0034] The shape of the acoustic holes 5b is not particularly limited, and may be circular, rectangular, elliptical, or the like. The size of each acoustic hole 5b and the interval between the acoustic holes 5b are not particularly limited, and are determined in consideration of sensitivity and noise characteristics. In addition, the arrangement of the multiple acoustic holes 5b may be, for example, circular acoustic holes 5b arranged in multiple concentric circles around the center so as to face the circular diaphragm 3. In this case, the acoustic hole 5b may or may not be formed in the center.

[0035] As described above, the etching holes 5c play an important role in etching the insulating film 2 near the end 3d of the vibrating membrane 3, and their shape is not particularly limited to a circular, rectangular, or elliptical shape, as is the acoustic holes 5b. Specifically, the etching holes 5c are formed in a circular shape, as is the acoustic holes 5b, and a plurality of the etching holes 5c are arranged at equal intervals around the outer periphery of the acoustic holes 5b so as to surround the entire acoustic holes 5b. In this case, the acoustic holes 5b are each formed to have approximately the same size, but the etching holes 5c may be arranged at different sizes and intervals from the acoustic holes 5b.

[0036] Hereinafter, as one embodiment of the method for manufacturing a MEMS element according to the present disclosure, a method for manufacturing a MEMS element according to this embodiment will be described with reference to FIGS. 4A to 4H.

[0037] As shown in FIGS. 4A to 4H, the method for manufacturing the MEMS element of this embodiment includes the steps of forming an insulating film 2 on a substrate 1 (see FIG. 4A), forming a conductive film 31 on the insulating film 2 (see FIG. 4C), patterning the peripheral end portion, and forming slits 3a, 3b (see FIG. 2) and, if necessary, an etching hole 3c on the peripheral portion of the conductive film 31 to form a vibration film 3 (see FIG. 4D), forming a sacrificial layer 41 on the vibration film 3 (see FIG. 4E), and forming a back plate film 51 including a fixed electrode 5a on the sacrificial layer 41 (see FIG. 4F). The method includes a step of forming a back plate 5 having a plurality of acoustic holes 5b in a back plate film 51 and etching holes 5c around the plurality of acoustic holes 5b (see FIG. 4G), a step of forming an opening 1a in a substrate 1 located under a center of a vibration membrane 3 (see FIG. 4H), and a step of removing an insulating film 2 under a vibration membrane 3 by immersing the substrate 1 in an etching solution, while leaving a peripheral portion of a sacrificial layer 41 as a spacer 4 and leaving only a portion between an outermost periphery of an outer slit 3a of the vibration membrane 3 and an end 3d of the vibration membrane 3 (see FIG. 1). The etching hole 3 is formed closer to the peripheral portion of the back plate 5 than the outermost periphery of the outer slit 3a of the vibration membrane 3 in a plan view, and at least one of the position of the etching hole 5c, the size of the etching hole 5c, the etching time, and the concentration of the etching solution is adjusted, so that the insulating film 2 remaining under the vibration membrane 3 is left in a ring shape with a width that minimizes the influence of stress from the substrate 1 and holds the vibration membrane 3.

[0038] First, an insulating film 2 is formed on a substrate 1 (FIG. 4A). For example, the insulating film 2 made of silicon oxide is formed on the surface of the substrate 1. The insulating film 2 can be formed by a method commonly used in the art. For example, when the substrate 1 is a silicon substrate, the insulating film 2 may be formed by thermal oxidation or deposited by a CVD method or the like. When bumps 3e are to be provided on the vibration membrane 3, recesses 2c for forming the bumps 3e are formed by etching the insulating film 2 at positions corresponding to the positions where the bumps 3e are to be provided before laminating the vibration membrane 3 (FIG. 4B).

[0039] On this insulating film 2, a conductive polysilicon film with a thickness of about 0.2 to 1 μm is laminated and formed as a conductor film 31 by, for example, a CVD method (FIG. 4C). The peripheral end portion, outer slit 3a, inner slit 3b (see FIG. 2), and, if necessary, etching hole 3c of the conductor film 31 are removed by patterning using a photolithography method or the like to form the vibration film 3 (FIG. 4D). At this time, the entire end portion may not be removed, and the conductor film 31 may be left in the portion that will become the lower portion of the spacer 4, but it is separated from the vibration film 3 by the separating groove.

[0040] Next, in accordance with a typical manufacturing process for the MEMS element 100, a sacrificial layer 41 made of silicon oxide is formed to a thickness of, for example, about 3 μm (FIG. 4E), and a conductive polysilicon film is formed on the sacrificial layer 41. Next, patterning is performed by a typical photolithography method to form a fixed electrode 5a made of, for example, a polysilicon film, and a back plate film 51 made of silicon nitride is formed on the fixed electrode 5a (FIG. 4F).

[0041] Thereafter, acoustic holes 5b for transmitting sound pressure to the diaphragm 3 and etching holes 5c for etching the sacrificial layer 41 and the insulating film 2 are formed in the backplate film 51 and the fixed electrode 5a by a normal photolithography method, and the sacrificial layer 41 is partially exposed (FIG. 4G). At this time, the etching holes 5c are formed so as to be outside the acoustic holes 5b (the edge side of the backplate film 51) and outside the fixed electrode 5a, outside the outer slits 3a formed in the diaphragm 3 in a plan view (the end 3d side of the diaphragm 3), and at a position overlapping with the diaphragm 3 in a plan view.

[0042] Thereafter, the center of the substrate 1 is etched away from the back surface, which is the surface opposite to the surface on which the insulating film 2 is formed, to expose the insulating film 2, thereby forming an opening 1a (FIG. 4H). This opening 1a is formed so that the lower parts of the outer and inner slits 3a, 3b formed in the vibration film 3 are not positioned within the opening 1a.

[0043] Finally, etching is started simultaneously from the acoustic hole 5b, the etching hole 5c, and the opening 1a to remove the sacrificial layer 41 and the insulating film 2, thereby forming a gap between the vibration membrane 3 and the back plate 5. In addition, the portion of the insulating film 2 exposed at the opening 1a and the portion of the vibration membrane 3 exposed by removing the sacrificial layer 41, which is connected to the slits 3a, 3b and the end 3d, are etched up to the underside of the vibration membrane 3, resulting in the structure shown in FIG.

[0044] That is, the insulating film 2 is etched not only in the portion exposed in the opening 1a but also in the lower side of the vibrating film 3 connected to the opening 1a, the slits 3a, 3b, and the end 3d. In other words, the insulating film 2 present on the lower surface of the vibrating film 3 is entirely etched away by the etching solution from the opening 1a and the slits 3a, 3b on the central side from the outer slit 3a, and on the end 3d side from the outer slit 3a, only the peripheral edge of the outer slit 3a and the vicinity of the end 3d of the vibrating film 3 are etched, and the insulating film 2 remains therebetween as shown in FIG.

[0045] As described above, the remaining range of the insulating film 2 is very important in terms of suppressing the transmission of stress to the vibration membrane 3 and the holding force for holding the vibration membrane 3 reliably. However, it is subject to variation depending on the manufacturing lot, etc. Therefore, in the process of removing the insulating film 2, at least one of the position of the etching hole 5c, the size of the etching hole 5c, the etching time, and the concentration of the etching solution is adjusted so that the width of the insulating film 2 remaining under the vibration membrane 3 is the minimum width for holding the vibration membrane 3 and is a width that minimizes the influence of the stress from the substrate 1, and it is preferable to perform the process so that the etching width of the end 3d of the vibration membrane 3 and the etching width near the outermost periphery outer slit 3a are approximately the same.

[0046] A MEMS element 101 according to another embodiment of the present disclosure is shown in Fig. 5. In this MEMS element 101, a pillar 6 is provided in the center thereof, connecting the diaphragm 3 and the back plate 5. Such pillar 6 is formed of an insulating material that remains unetched when the sacrificial layer 41 is etched, and fixes the center of the diaphragm 3 and the back plate 5. This improves the sound pressure level at which speech cannot be distinguished from noise (acoustic overload point (AOP)) and strength against excessive pressure, thereby obtaining an excellent acoustic signal and reliability resistance.

[0047] 4E, a hole is opened in the center of the sacrificial layer 41, and the hole is filled with silicon nitride or the like, which is the same material as the back plate 5 that will become the pillar 6, to form the pillar 6 by selective etching. Alternatively, the pillar 6 can be formed by leaving a part of the sacrificial layer 41 without opening an acoustic hole 5b in the center.

[0048] In Fig. 5, the etching holes 3c and the bumps 3e are not shown in the vibration membrane 3, but these are not essential components and are adopted as necessary in this embodiment. In Fig. 5, the same parts as in Fig. 1 are given the same reference numerals as in Fig. 1, and the description thereof will be omitted.

[0049] (summary) (1) One embodiment of a MEMS element of the present disclosure comprises a substrate having an opening, a vibration membrane formed on the substrate via an insulating film, the vibration membrane having slits intermittently formed along an edge of the peripheral portion, and a back plate fixed to a spacer formed on the peripheral portion of the substrate and having a plurality of acoustic holes in a center portion, the back plate having an etching hole at an outer periphery of the plurality of acoustic holes and at a position closer to the edge than the outermost edge of the slits of the vibration membrane in a planar view, the slits are formed to be located above a portion of the substrate where no openings are formed, the edge of the vibration membrane and the insulating film below the vibration membrane are spaced from a lower edge of the spacer, the edge of the insulating film below the vibration membrane on the spacer side is positioned closer to the slit than the edge of the vibration membrane, and the edge of the insulating film below the vibration membrane on the slit side is positioned closer to the spacer than the slit.

[0050] According to the MEMS element of this embodiment, the stress of the diaphragm is not affected by other members, such as a spacer or a back plate, and the influence of the insulating film located between the diaphragm and the substrate can be suppressed, so that a stable MEMS element such as a microphone can be manufactured. Furthermore, by providing the diaphragm with a slit structure, a highly sensitive microphone can be manufactured, and it is easy to achieve optimization of the insulating film that remains under the diaphragm. Furthermore, by forming the slit in a place where no opening is formed in the substrate, the acoustic resistance can be increased, and a microphone with flat frequency characteristics and desired frequency characteristics can be realized.

[0051] (2) By configuring the diaphragm to have a pillar in the center that connects the diaphragm to the back plate, the acoustic overload point (AOP) can be improved, and an excellent acoustic signal can be obtained.

[0052] (3) The insulating film remains in a ring shape by removing the inner periphery of the slit, and the width of the insulating film at the slit in a planar view is narrower than the width of the insulating film between the slits. By configuring the inner periphery of the insulating film to have an uneven surface, the area of ​​the insulating film underlying the vibration membrane is reduced, and the effect of stress caused by the insulating film can be further reduced.

[0053] (4) By configuring the vibration membrane to have a bump on the surface inside the slit facing the substrate, it is possible to eliminate the possibility of a phenomenon known as sticking, in which the vibration membrane and substrate adhere to each other during etching.

[0054] (5) By configuring the slits to be provided around at least two circumferences and an etching hole being formed between the slits on the innermost circumference of the two circumferences, it is possible to prevent etching residue from remaining between the slits.

[0055] (6) One embodiment of a manufacturing method of a MEMS element of the present disclosure includes the steps of forming an insulating film on a substrate, forming a conductive film on the insulating film, patterning the peripheral end portion and forming slits in the peripheral portion of the conductive film to form a vibration membrane, forming a sacrificial layer on the vibration membrane, forming a backplate film including a fixed electrode on the sacrificial layer, forming a backplate having a plurality of acoustic holes in the backplate film and etching holes on the outer periphery of the plurality of acoustic holes, forming an opening in the substrate located below the center of the vibration membrane, and immersing the substrate in an etching solution to form an etching hole on the periphery of the sacrificial layer. and removing a part of the insulating film from the outermost periphery side of the slit in the vibrating membrane and the end side of the vibrating membrane while leaving an edge portion as a spacer, and removing the insulating film under the vibrating membrane so as to leave only a part of the insulating film between the outermost periphery of the slit and the end of the vibrating membrane, wherein the etching hole is formed on the peripheral edge side of the back plate rather than the outermost periphery of the slit in the vibrating membrane in a planar view, and the insulating film remaining under the vibrating membrane is left in a ring shape that holds the vibrating membrane by adjusting at least one of the position of the etching hole, the size of the etching hole, the etching time, and the concentration of the etching solution.

[0056] According to the manufacturing method of this embodiment, even if the manufacturing conditions change depending on the type of MEMS element or the production lot, it is possible to always leave an optimal amount of insulating film by adjusting either the position or size of the etching hole or the etching conditions, thereby obtaining MEMS elements such as uniform and highly sensitive MEMS microphones.

[0057] (7) It is preferable that the etching of the insulating film is adjusted so that the shape of the central portion of the insulating film remaining under the vibrating film has a protruding portion. [Explanation of symbols]

[0058] 100, 101 MEMS elements 1 Board 2. Insulating film 2a Dividing trench 2c Recess for bump formation 3. Diaphragm 3a Outer slit 3b Inner slit 3c Etching hole 3d End of the diaphragm 3e Bump 31 Conductive Film 4 Spacer 41 Sacrificial Layer 5 Backplate 5a fixed electrode 5b Acoustic Hall 5c Etching hole 51 Backplate membrane 6 Pillars 200 Related technology MEMS elements (microphones) 10 Substrate 20 Insulating film 30 Vibrating membrane 40 Spacer 50 Backplate

Claims

1. A substrate having an opening; a vibration membrane formed on the substrate via an insulating film, the vibration membrane having slits intermittently formed along the edge of the periphery; a back plate fixed to a spacer formed on the periphery of the substrate and having a plurality of acoustic holes in a center portion; Equipped with the back plate has an etching hole at a position on the outer periphery of the plurality of acoustic holes and on the end side of the outermost periphery of the slits of the vibration membrane in a plan view, the slits are formed so as to be located on a portion of the substrate where no openings are formed, the end of the vibration membrane and the insulating film below the vibration membrane are spaced apart from the lower end of the spacer, and an end of the insulating film below the vibration membrane on the spacer side is arranged closer to the slit than the end of the vibration membrane, and an end of the insulating film below the vibration membrane on the slit side is arranged closer to the spacer than the slit. MEMS element.

2. The MEMS element according to claim 1 , wherein the vibration membrane has a pillar at its center that connects the vibration membrane to the back plate.

3. 3. The MEMS element according to claim 1, wherein the insulating film remains in a ring shape by removing the inner periphery side of the slit, the width of the insulating film in the slit portion in a planar view is narrower than the width of the insulating film between the slits, and the inner periphery edge of the insulating film is uneven.

4. 4. The MEMS element according to claim 1, wherein the vibration membrane has a bump on a surface inside the slit and facing the substrate.

5. 5. The MEMS element according to claim 1, wherein the slits are provided around at least two circumferences, and an etching hole is formed between the slits on the inner circumference of the two circumferences.

6. forming an insulating film on a substrate; forming a conductor film on the insulating film, patterning a peripheral end portion of the conductor film, and forming a slit in a peripheral portion of the conductor film to form a vibration film; forming a sacrificial layer on the vibration membrane; forming a backplate film including a fixed electrode on the sacrificial layer; forming a back plate having a plurality of acoustic holes and an etching hole on the periphery of the plurality of acoustic holes in the back plate film; forming an opening in the substrate located below a center portion of the diaphragm; a step of immersing the substrate in an etching solution to leave a peripheral portion of the sacrificial layer as a spacer, and removing a portion of the insulating film from the outermost periphery side of the slit of the vibration membrane and the end side of the vibration membrane, and removing the insulating film under the vibration membrane so as to leave only a portion of the insulating film between the outermost periphery of the slit and the end of the vibration membrane; Equipped with A method for manufacturing a MEMS element, characterized in that the etching hole is formed closer to the peripheral edge of the back plate than the outermost periphery of the slit in the vibration membrane when viewed in a plane, and at least one of the position of the etching hole, the size of the etching hole, the etching time, and the concentration of the etching solution is adjusted to leave the insulating film remaining under the vibration membrane in a ring shape that holds the vibration membrane.

7. The method for manufacturing a MEMS element according to claim 6 , wherein the etching of the insulating film is adjusted so that the shape of the central portion of the insulating film remaining under the vibration film has a protrusion.

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