PLATFORM AND METHODS FOR OPERATING AN INTEGRATED END-TO-END SELF-ALIGNED MULTI-PATTERNING PROCESS - Patent application

Abstract

To provide a method of a self-alignment multi-patterning on a semiconductor workpiece.SOLUTION: In a method, a workpiece on which a mandrel pattern is formed is received by a common manufacturing platform, a side wall spacer pattern is formed on the basis of at least part of the mandrel pattern. The side wall spacer pattern includes a plurality of second features separated by a second pitch distance. A first pitch distance is larger than the second pitch distance. A sequence in an integrated processing step is executed in the common manufacturing platform without being separated from a controlled environment, and a transfer module is used for transferring the workpiece between processing modules while maintaining the workpiece in the controlled environment. Generally, on the common manufacturing platform, the side wall spacer pattern is formed by using a selective / conformal accumulation, an etching, or an implantation technique.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application is a continuation of U.S. Provisional Patent Application No. 62 / 645,685, filed March 20, 2018, and entitled "Substrate Processing Tool with Integrated Metrology and Method of Using," U.S. Provisional Patent Application No. 62 / 784,151, filed December 21, 2018, and entitled "Platform and Method for Operating for Integrated End-to-End Self Aligned Multiple Patterning Process," U.S. Provisional Patent Application No. 62 / 787,607, filed January 2, 2019, and entitled "Self-Aware and Correcting Heterogeneous Platform incorporating Integrated Semiconductor Processing Modules and Method for using same," U.S. Provisional Patent Application No. 62 / 787,608, filed January 2, 2019, and entitled "Self-Aware and Correcting Heterogeneous Platform incorporating Integrated Semiconductor Processing Modules and Method for using same," and U.S. Provisional Patent Application No. 62 / 787,608, filed January 4, 2019, and entitled "Substrate Processing Tool This application claims the benefit of U.S. Provisional Patent Application No. 62 / 788,195, entitled "Method and Method of Using Integrated Metrology and Methods of Using a 3D Printer," which is incorporated herein by reference in its entirety.

[0002] The present invention relates to a processing platform and a method of semiconductor processing using the platform, and more particularly to a method of self-aligned multi-patterning (SAMP). [Background technology]

[0003] SAMP technology has been used to form components such as fin-type field effect transistor (FinFET) devices. Dimensional shrinking is one of the driving forces behind the development of integrated circuit processing. Reducing size dimensions can provide cost-effectiveness and improved device performance. This scalability creates unavoidable complexities in process flows, especially in patterning techniques. As fabricated transistors get smaller, it becomes increasingly difficult to produce the critical dimension (CD) or resolution of the patterned features, especially in high volume manufacturing. To be able to continue scaling cost-effectively, self-aligned patterning must replace overlay-driven patterning. High volume manufacturing environments require patterning options that allow for reduced variability, extended scaling, and improved CD and process control. However, it is becoming extremely difficult to manufacture scaled devices at a reasonable low cost and high yield.

[0004] A conventional SAMP flow has several steps including mandrel (or core) formation, spacer deposition, spacer etch, and mandrel pull. In this approach, the critical dimension (CD) of the final feature is controlled by the workpiece attributes including the spacer deposition thickness and the spacer physical characteristics such as line edge roughness (LER) and line width roughness (LWR). Furthermore, the spacer etch often results in distortion of the final spacer profile, such as loss of spacer facets and CD. It is important to maintain the spacer profile and CD since it has a significant impact on pitch-walking effects, mask budget, and CD target of the final structure. Further challenges with the processing techniques include loss of spacer height due to non-uniform etching, and lack of selectivity between core and spacer materials. Furthermore, improper etching of the spacer material can result in spacer footing, core and spacer step discrepancy, etc. Such manufacturing defects can cause further device defects, reduce product yields, limit the scale of manufactured devices, etc. Several operations in the SAMP process flow are challenged by tool drift over time, specifically the edge placement error (EPE) can exceed acceptable levels. EPE is the difference between the intended design and the actual result and is defined as the sum of the variations that cause blocking mask placement errors and process shifts. EPE is expressed as a number and a target EPE value is defined for a given process flow. Briefly, EPE corresponds to a combination of different metrics (CD uniformity, overlay, line edge roughness (LER)) and variations.

[0005] As devices are scaled smaller and smaller features and technologies are implemented in an attempt to address the challenges caused by scaling, it is important to monitor the fabrication process at various stages of the process flow to determine whether the attributes of the features are within specification, and if not, to adjust the process to bring the workpiece within specification, or to bring subsequently processed workpieces within specification.

[0006] In traditional SAMP, a process is performed using multiple separate standalone tools for high volume manufacturing. Wafers are loaded sequentially into one tool, undergo one process step there, then removed to the ambient environment and queued for loading into the next tool, and so on, until multiple steps in the SAMP flow are completed. The time spent waiting in the queue at each tool is called the Q-time, and high Q-times result in low production rates. Different operations in the process flow may take different amounts of time, making tool throughput matching a production challenge.

[0007] Each tool in the process flow can be part of a tool cluster. For example, five identical etch tools can be clustered in combination with a transport tool so that five wafers can be etched simultaneously in one step of the process flow, allowing for high volume production. The redundancy of these cluster tools provides an advantage if a tool becomes unavailable for any reason. If one tool in a five-tool cluster becomes unavailable for a week, production can continue, albeit at only 80% capacity. Thus, each standalone tool in a SAMP flow can be a cluster of identical tools to prevent production from being completely halted by an unavailable tool, and clustering can be used to minimize throughput matching challenges.

[0008] In traditional SAMP, when measurements are required to determine if the process is operating within specifications, a standalone metrology tool may be included, where the workpiece is periodically removed from the process flow to perform measurements, often destructive measurements using measurement pads on the workpiece. The results may be fed back to the process flow tool for adjustments to downstream steps in the process flow or to upstream steps for future wafers. This process involves exposure to the ambient environment, Q-time waits for the metrology tool to become available, and long measurement times before results are available, and a significant amount of time may pass before data is available that can make adjustments to the process flow in either a feedback or feedforward manner. While real-time measurements of workpiece attributes would be ideal to be performed within the process chamber, issues with exposure of the measurement device to process gases make real-time in-situ measurement and control logistically difficult or impossible.

[0009] Thus, traditional approaches using multiple separate standalone tools (single or clustered) for volume manufacturing can result in challenges including, but not limited to, oxidation due to Q-time (i.e., as the wafer waits between tools for its turn at the next tool, it can experience oxidation from the ambient environment), defects due to environmental exposure between tools, cost challenges due to difficulty in matching throughput, tool drift over time (e.g., EPE), real-time chamber matching (e.g., yield and EPE), and lack of real-time workpiece measurement and process control. These and other challenges need to be addressed to enable volume manufacturing with SAMP technology. Summary of the Invention [Means for solving the problem]

[0010] According to an embodiment, a method of self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps performed on a common fabrication platform hosting a plurality of processing modules including one or more film formation modules, one or more etching modules, and one or more transfer modules is provided. In one embodiment, the integrated sequence of processing steps includes receiving a workpiece on the common fabrication platform, the workpiece having a mandrel pattern formed thereon, the mandrel pattern including a number of features separated by a first pitch distance, and forming a sidewall spacer pattern based at least in part on the mandrel pattern using the one or more film formation modules and the one or more etching modules, the sidewall spacer pattern including a plurality of second features separated by a second pitch distance, the first pitch distance being greater than the second pitch distance. The integrated sequence of processing steps is performed within a controlled environment in the common fabrication platform without leaving the controlled environment, and one or more transfer modules are used to transport the workpiece between the plurality of processing modules while maintaining the workpiece within the controlled environment.

[0011] In another embodiment, a workpiece having a mandrel pattern formed thereon, including several mandrel lines, is received at a common fabrication platform, and the integrated processing sequence further includes conformally applying a first thin film onto the mandrel pattern using a first film formation module hosted on the common fabrication platform, and removing the first thin film from an upper surface of the mandrel pattern and a lower surface adjacent the mandrel pattern using a first etching module hosted on the common fabrication platform without breaking vacuum to leave the first thin film on the sidewalls of the mandrel pattern, thereby forming a first sidewall spacer. Thereafter, the mandrel pattern is removed from the workpiece using a second etching module hosted on the common fabrication platform without breaking vacuum to leave the first sidewall spacers, thereby forming a new feature pattern including twice the number of features as the number of mandrel lines. One or more transfer modules are used to transfer the workpiece between the first film formation module, the first etching module, and the second etching module without breaking vacuum.

[0012] In a related embodiment, the method continues using the new feature pattern as another mandrel pattern. In the continued method, a second thin film is conformally applied onto the new feature pattern using a second film forming module hosted on the common fabrication platform without breaking vacuum. The continued method further includes removing the second thin film from an upper surface of the new feature pattern and a lower surface adjacent to the new feature pattern using a third etching module hosted on the common fabrication platform without breaking vacuum to leave the second thin film on the sidewalls of the new feature pattern, thereby forming second sidewall spacers, and removing the second mandrel pattern from the workpiece using a fourth etching module hosted on the common fabrication platform without breaking vacuum to leave second sidewall spacers, the number of second sidewall spacers being four times the number of mandrel lines.

[0013] In another embodiment, a workpiece having a mandrel pattern formed thereon, the mandrel pattern including several mandrel lines, is received on a common manufacturing platform, and the integrated processing sequence further includes conformally applying a first thin film onto the mandrel pattern using a first film formation module hosted on the common manufacturing platform, and removing the first thin film from an upper surface of the mandrel pattern and a lower surface adjacent to the mandrel pattern using a first etching module hosted on the common manufacturing platform without breaking vacuum to leave the first thin film on sidewalls of the mandrel pattern, thereby forming a first sidewall spacer. A second thin film is then conformally applied onto the first sidewall spacer and the mandrel pattern in a second film formation module hosted on the common fabrication platform without breaking vacuum, and the second thin film is removed from the top surface of the first sidewall spacer and the top surface and bottom surface adjacent to the first sidewall spacer in a second etching module hosted on the common fabrication platform, again without breaking vacuum, to leave a second thin film on the sidewalls of the first sidewall spacer, thereby forming a second sidewall spacer. The first sidewall spacer is then removed from the workpiece, without breaking vacuum, using a third etching module hosted on the common fabrication platform, to leave a second sidewall spacer and the mandrel pattern, thereby forming a new feature pattern including three times the number of features as the number of mandrel lines. One or more transfer modules are used to transfer the workpiece between the first film formation module, the first etching module, the second film formation module, the second etching module, and the third etching module, without breaking vacuum.

[0014] In one embodiment, a sequence of integrated processing steps includes receiving a workpiece on a common manufacturing platform, the workpiece having a mandrel pattern formed thereon, the mandrel pattern including a number of features separated by a first pitch distance, and forming a sidewall spacer pattern based at least in part on the mandrel pattern using one or more film formation modules and one or more etching modules, the sidewall spacer pattern including a number of second features separated by a second pitch distance, the first pitch distance being greater than the second pitch distance. The integrated processing sequence further includes obtaining metrology data associated with forming the sidewall spacer pattern, the metrology data being used to determine a thickness, width, or profile of the sidewall spacer pattern, and if the thickness, width, or profile of the sidewall spacer pattern does not meet a target thickness, width, or profile of the sidewall spacer pattern, repairing the sidewall spacer pattern by (i) selectively depositing additional material on the structure, (ii) conformally depositing additional material on the structure, (iii) reshaping the structure, (iv) etching the structure, (v) implanting a dopant into the structure, (vi) removing and reapplying a material layer of the structure, or any combination of two or more thereof. The integrated processing sequence is performed within a controlled environment in the common manufacturing platform without leaving the controlled environment, and one or more transfer modules are used to transport the workpieces between the multiple processing modules while maintaining the workpieces within the controlled environment.

[0015] In a related embodiment, forming the sidewall spacer pattern includes conformally applying a thin film onto the mandrel pattern in one of the one or more film formation modules; removing the thin film from an upper surface of the mandrel pattern and a lower surface adjacent to the mandrel pattern in one of the one or more etching modules to leave a thin film on the sidewalls of the mandrel pattern, thereby forming sidewall spacers; and removing the mandrel pattern from the workpiece in one of the one or more etching modules to leave sidewall spacers, the sidewall spacers forming a sidewall spacer pattern having a multiplicity of the number of features of the removed mandrel pattern.

[0016] In another related embodiment, forming the sidewall spacer pattern includes conformally applying a first thin film onto the mandrel pattern in one of the one or more film formation modules; removing the first thin film from an upper surface of the mandrel pattern and a lower surface adjacent the mandrel pattern in one of the one or more etching modules to leave the first thin film on the sidewalls of the mandrel pattern, thereby forming first sidewall spacers; and conformally applying a second thin film onto the first sidewall spacers and the mandrel pattern in one of the one or more film formation modules. applying a thin film to the workpiece; removing the second thin film from an upper surface of the first sidewall spacer and an upper surface and a lower surface adjacent to the first sidewall spacer in one of the one or more etching modules to leave a second thin film on the sidewalls of the first sidewall spacer, thereby forming a second sidewall spacer; and removing the first sidewall spacer from the workpiece in one of the one or more etching modules to leave a second sidewall spacer and the mandrel pattern to form a feature pattern having a multiple of the number of features of the removed mandrel pattern.

[0017] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the general description of the invention provided above, as well as the detailed description provided below, serve to explain the invention. [Brief description of the drawings]

[0018] [Fig. 1A-1E] 1A-1D are schematic cross-sectional views illustrating one embodiment of a self-aligned double patterning method. [Figures 2A-2D] 1A-1D are schematic cross-sectional views illustrating one embodiment of a self-aligned quadruple patterning method. [Diagram 3] FIG. 1 is a flow chart diagram illustrating one embodiment of a self-aligned multiple patterning integrated process flow. [Figure 4] FIG. 1 is a schematic diagram illustrating one embodiment of a common manufacturing platform for implementing the integrated self-aligned multi-patterning method. [Diagram 5] FIG. 1 is a schematic diagram illustrating one embodiment of a common manufacturing platform for implementing the integrated self-aligned multi-patterning method. [Figures 6A-6G] 1A-1C are schematic cross-sectional views illustrating one embodiment of a self-aligned triple patterning method. [Figure 7] FIG. 1 is a flow chart diagram illustrating one embodiment of a self-aligned multiple patterning integrated process flow. [Figure 8] FIG. 1 is a schematic diagram illustrating one embodiment of a common manufacturing platform for performing an integrated sequence of processing steps. [Figure 9A] 1 is a schematic top view of another embodiment of a common manufacturing platform for performing an integrated sequence of processing steps. [Figure 9B] FIG. 9B is a partial cross-sectional side view of a measurement module incorporated into the common manufacturing platform of FIG. 9A. [Figure 9C] 1 is a schematic top view of another embodiment of a common manufacturing platform for performing an integrated sequence of processing steps. [Figure 9D] FIG. 9D is a partial cross-sectional side view of a measurement module incorporated into the common manufacturing platform of FIG. 9C. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] A method for using an integrated platform for self-aligned multi-patterning (SAMP) is presented. However, as will be understood by those skilled in the art, various embodiments may be practiced without one or more of the following specific details, or with other alternative and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations have not been shown or described in detail to avoid obscuring aspects of various embodiments of the invention.

[0020] Similarly, for purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the invention. However, the invention may be practiced without the specific details. It is further understood that the various embodiments shown in the figures are illustrative representations and have not necessarily been drawn to scale. In referring to the drawings, like reference numerals refer to like elements throughout the drawings.

[0021] References throughout this specification to "one embodiment" or "an embodiment" or variations thereof mean that a particular feature, structure, material, or characteristic described in connection with that embodiment is included in at least one embodiment of the invention, but do not mean that they are present in every embodiment. Thus, phrases such as "in one embodiment" or "in an embodiment" that may appear in various places throughout this specification do not necessarily refer to the same embodiment of the invention. Furthermore, particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments. In alternative embodiments, various additional layers and / or structures may be included and / or described features may be omitted.

[0022] Additionally, it is understood that "a" or "an" may mean "one or more" unless expressly specified otherwise.

[0023] Various operations are described sequentially as multiple separate operations, which is the order in which the invention is most easily understood. However, the order of description should not be construed as implying that the operations are necessarily order dependent. In particular, the operations need not be performed in the order described. The described operations may be performed in a different order than in the described embodiment. In alternative embodiments, various additional operations may be performed and / or described operations may be omitted.

[0024] The term "substrate" as used herein means and includes a base material or structure on which a material is formed. It will be understood that a substrate may include a single material, multiple layers of different materials, a layer having regions of different materials or different structures, and the like. These materials may include semiconductors, insulators, conductors, or combinations thereof. For example, a substrate may be a semiconductor substrate, a base semiconductor layer on a supporting structure, a metal electrode, or a semiconductor substrate having one or more layers, structures, or regions formed thereon. A substrate may be a conventional silicon substrate or other bulk substrate that includes a layer of semiconductor material. The term "bulk substrate" as used herein means and includes not only silicon wafers, but also silicon-on-insulator ("SOI") substrates (e.g., silicon-on-sapphire ("SOS") substrates and silicon-on-glass ("SOG") substrates), epitaxial layers of silicon on a base semiconductor, and other semiconductor or optoelectronic materials (e.g., silicon germanium, germanium, gallium arsenide, gallium nitride, and indium phosphide). The substrate may be doped or undoped.

[0025] As used herein, the term "workpiece" refers to a composition of materials or layers formed on a substrate during one or more phases of a semiconductor device manufacturing process. The workpiece will ultimately contain a semiconductor device at the final stage of processing.

[0026] The present embodiment includes a method of SAMP utilizing a common manufacturing platform where multiple processing steps are performed on a common platform in a controlled environment, e.g., without breaking vacuum between operations. The integrated end-to-end platform includes both an etching module and a film formation module and is configured to transport the workpiece from one module to another while maintaining the workpiece in a controlled environment, e.g., without breaking vacuum or leaving an inert gas protective environment outside the common manufacturing platform, thus avoiding exposure to the ambient environment. Any SAMP process may be performed on the common manufacturing platform, and the integrated end-to-end platform enables high volume manufacturing while reducing costs and improving yields, defect levels, and EPE. As used herein, a SAMP process includes any spacer patterning technique or sidewall image transfer technique to reduce the pitch of features on a workpiece, which may also be referred to as increasing pitch density. SAMP processes include, but are not limited to, self-aligned double, triple, quadruple, octuple, etc. patterning, multi-color alternating materials, self-blocking and cutting, multi-color patterned mask layers, etc. As used herein, "pitch" or "pitch distance" is the distance between two identical points in two adjacent features of a pattern. A pattern having an initial number of features separated by a first pitch distance may be multiplied to increase the number of features and thereby decrease the pitch distance, i.e., pitch. For example, in a quadruple patterning process, the number of features, i.e., pitch density, is quadrupled and the pitch, i.e., pitch distance, is reduced to one-quarter, i.e., 1 / 4, of the initial pitch. This is sometimes incorrectly referred to as pitch multiplication, but may more accurately be referred to as pitch reduction or pitch density multiplication.

[0027] As used herein, a "film formation module" refers to any type of processing tool for depositing or growing a film or layer on a workpiece in a process chamber. The film formation module may be a single wafer tool, a batch processing tool, or a semi-batch processing tool. The types of film deposition or growth that may be performed in the film formation module include, but are not limited to, chemical vapor deposition, plasma-enhanced or plasma-assisted chemical vapor deposition, atomic layer deposition, physical vapor deposition, thermal oxidation or nitridation, etc., and the process may be isotropic, anisotropic, conformal, selective, blanket, etc.

[0028] As used herein, an "etch module" refers to any type of processing tool for removing all or part of a film, layer, residue, or contaminant on a workpiece in a process chamber. The etch module may be a single wafer tool, a batch processing tool, or a semi-batch processing tool. Types of etching that may be performed in the etch module include, but are not limited to, for example, Chemical Oxide Removal (COR), dry (plasma) etching, reactive ion etching, wet etching using immersion or non-immersion techniques, atomic layer etching, chemical mechanical polishing, cleaning, ashing, lithography, etc., and the process may be isotropic, anisotropic, selective, etc.

[0029] As used herein, a "module" generally refers to a processing tool collectively having all of its hardware and software, including process chambers, substrate holder and movement mechanisms, gas supply and distribution systems, pumping systems, electrical systems and controllers, etc. Such details of modules are known in the art and therefore will not be discussed herein.

[0030] In its broadest sense, embodiments of the present disclosure relate to an integrated sequence of processing steps performed on a workpiece and executed on a common fabrication platform that hosts a number of processing modules, including one or more film formation modules, one or more etching modules, and one or more transfer modules. The integrated sequence of processing steps includes receiving a workpiece on the common fabrication platform, the workpiece having a mandrel pattern formed thereon, the mandrel pattern including several features, sometimes referred to as mandrels or mandrel lines. The features are separated by an initial pitch distance. Using the one or more film formation modules and the one or more etching modules, a sidewall spacer pattern is formed based at least in part on the mandrel pattern. The sidewall spacer pattern has a multiple of the number of features of the mandrel pattern, i.e., the pitch density is multiplied. For example, the sidewall spacer pattern may have two, three, four, six, eight, etc. times the number or pitch density of features. The features of the sidewall spacer pattern are separated by a second pitch distance, the first pitch distance being greater than the second pitch distance, i.e., the pitch is reduced. For example, the second pitch distance may be one-half, one-third, one-quarter, one-sixth, one-eighth, etc., of the first pitch distance. The integrated sequence of processing steps is performed within a controlled environment in a common manufacturing platform without leaving the controlled environment, and one or more transfer modules are used to transfer workpieces between multiple processing modules while maintaining the workpieces within the controlled environment. In the broadest embodiment, the controlled environment includes any conditions to which the substrate 104 is exposed without exposure to ambient air or conditions (e.g., temperature, humidity) that are not controlled or monitored by the common manufacturing platform. Exposing the substrate 104 to ambient air or other uncontrolled conditions may be referred to as a vacuum break. In a narrower embodiment, the controlled environment may be limited to exposing the substrate 104 to an inert gas (e.g., N2, Ar) under subatmospheric pressure conditions, or to any gas that minimizes changes to the exposed surface of the substrate 104.For example, in some cases, an integrated process sequence performed on a common fabrication platform, including treatment steps, metrology steps, and transfer steps, may be performed entirely at subatmospheric pressure. However, in other embodiments, the integrated process sequence may include atmospheric process pressures or higher to complete the entire integrated process within the common fabrication platform. In this embodiment, the controlled environment may include a wider range of pressures (e.g., subatmospheric, atmospheric, or higher) within the inert gas environment to limit or control changes to the substrate 104. In this manner, when the integrated sequence includes atmospheric or higher pressures and subatmospheric process conditions, the transitions between the different pressures occur within the controlled environment.

[0031] Reference will now be made to the drawings, in which like reference numbers indicate identical or corresponding elements throughout the several views.

[0032] 1A-1D illustrate an embodiment of a method for self-aligned double patterning (SADP) of a workpiece, and FIGS. 2A-2D illustrate an embodiment of a method for self-aligned quadruple patterning (SAQP), continuing from the method of FIGS. 1A-1D. FIG. 3 is a flow chart of a process flow 300 corresponding to the methods of FIGS. 1A-1D and 2A-2D. FIG. 4 illustrates an embodiment of a common manufacturing platform of the present invention that may be used to implement the process flow 300. The process flow 300 of FIG. 3 and the common manufacturing platform 400 of FIG. 4 are referenced throughout the following sequential description of FIGS. 1A-1E and 2A-2D, which describes a workpiece 100 progressing through a sequence of integrated processing steps.

[0033] In operation 302 of process flow 300, and as shown in FIG. 1A, a workpiece 100 having a first mandrel pattern 110 formed thereon is provided to a common fabrication platform 400. The workpiece 100 may include a stack of various materials on which a resist is applied, exposed, and subjected to a lithography process to create the first mandrel pattern 110. The resist pattern is then transferred to an underlying layer through a series of plasma steps. Those skilled in the art know different schemes for creating a mandrel pattern on a substrate, where the mandrels may be organic or hard mandrels including materials such as silicon, amorphous carbon, photoresist polymers, oxides, nitrides, etc. One such scheme includes the deposition of an optical or organic planarizing layer (OPL), typically a spin-on material, followed by the deposition of a silicon anti-reflective coating (SiARC) (also spin-on), followed by resist coating and lithography processes. Another scheme involves deposition of an amorphous carbon layer using CVD deposition, followed by SiON film deposition using a CVD process, followed by bottom anti-reflective coating (BARC) deposition using a spin-on process, followed by resist coating and lithography processes. For simplicity, workpiece 100 is shown having a substrate 104 having an underlayer 106 thereon onto which the final pattern is transferred, and first mandrel pattern 110 is formed on underlayer 106, although it can be understood that the structure on which first mandrel pattern 110 is formed may be a multi-layer structure in which underlayer 106 is only one of multiple layers. In one embodiment, the multi-layer structure may include a hard mask layer (not shown) that is patterned and etched to form the mandrel pattern on underlayer 106. The hard mask layer replaces the photoresist masking layer used to transfer first mandrel pattern 110 to underlayer 106.In certain cases, the multi-layer structure (underlying layer 106) may require a stronger etching process or a multi-step etching process than the photoresist layer can withstand in order to obtain the desired profile or dimensions of the first mandrel pattern 110. In another embodiment (not shown), the first mandrel pattern 110 may be formed on a common manufacturing platform 400 by an etching process performed after operation 302 using any of the patterning techniques disclosed herein.

[0034] As shown in FIG. 4, a transfer module 410a may be used to transfer work pieces into a controlled environment of the common manufacturing platform 400. This controlled environment is maintained throughout the entire process flow 300. The controlled environment may include a vacuum environment where each operation of the process flow 300 is performed without breaking vacuum, or an inert gas atmosphere below atmospheric pressure, or a combination thereof. A single transfer module may be coupled between each processing module or tool, or as shown in FIG. 4, separate transfer modules 410a-h may be used for each tool transfer. The transfer modules 410a-h may be collectively referred to herein as transfer modules 410, as appropriate. If different processing modules on the common manufacturing platform 400 require different controlled environments, for example, modules with different vacuum pressures or vacuum followed by inert gas atmospheres at one module, multiple transfer modules 410 may be used, with the transfer modules 410 assisting in effecting the transfer between the different controlled environments. While a single transport module may be useful in a clustered tool where processing modules of the same type are arranged in a circle around the transport module, multiple transport modules 410 may be more appropriate in an end-to-end platform configuration having different processing module types as shown in Figure 4. However, embodiments herein do not preclude an end-to-end platform configuration with a single transport module coupled to each of the processing modules, or any configuration in between, such as a common transport module for adjacent processing modules of the same type used in a sequence.

[0035] As is well known in high volume manufacturing, a front end module 402a may be used to load a cassette (not shown) of work pieces, sequence the work pieces, and insert them into a load lock and then into a controlled environment transfer module 410a, which sequentially loads the work pieces into a processing module. In one embodiment of the common manufacturing platform 400, in operation 302, the work pieces 100 received in the controlled environment are loaded by the transfer module 410a into a film formation module 420 hosted on the common manufacturing platform 400.

[0036] 1B and 3, in operation 304, a first thin film 120 is conformally deposited on the first mandrel pattern 110 and the underlayer 106 in a film formation module 420. The first thin film 120 may include oxide, nitride, silicon, or any combination thereof, such as silicon nitride, silicon oxide, or silicon oxynitride. As shown, the common fabrication platform 400 may include two identical film formation modules 420 on opposite sides of the transfer module 410a. By making both sides of the platform 400 symmetrical, end-to-end processing of two workpieces can be accomplished simultaneously, and if one film formation module 420 becomes temporarily unavailable, the platform 400 can continue to operate at least at 50% capacity.

[0037] Thereafter, without leaving the controlled environment, e.g., without breaking vacuum, the transfer module 410a and the transfer module 410b are used to transfer the workpiece 100 to an etching module 430, such as a first etching module 430a, also hosted on the common manufacturing platform 400. For example, the transfer module 410a removes the workpiece 100 from the film formation module 420 and transfers it to the transfer module 410b, which then delivers the workpiece to the first etching module 430a. If the first etching module 430a operates under different parameters than the film formation module 420, such as a different vacuum pressure, adjustments to the controlled environment may be made within the transfer module 410a and the transfer module 410b. 1C and 3, in operation 306, the first thin film 120 is etched in a first etching module 430a, leaving the first thin film 120 on the sidewalls of the first mandrel pattern 110, which residual thin film 120 forms first sidewall spacers 122. For example, operation 306 may be a first spacer reactive ion etch (RIE) process that creates the first sidewall spacers 122 by removing the first thin film 120 from the top surface of the first mandrel pattern 110 and from the bottom surface adjacent to the first mandrel pattern 110, e.g., from the underlayer 106. Again, the common manufacturing platform 400 may include two identical first etching modules 430a on opposite sides of the transfer module 410b.

[0038] 1D and 3, a first mandrel pull process is then performed in operation 308, also without leaving the controlled environment, e.g., without breaking vacuum. The first mandrel pull process removes the first mandrel pattern 110 and leaves behind a residual thin film 120 to form first sidewall spacers 122. The first mandrel pull process may be performed in the same etching module 430 used in operation 306 or in another etching module 430, such as a second etching module 430b hosted on the common manufacturing platform 400. If a second etching module 430b is used, a transfer module 410 is used to transfer the workpiece from the first etching module 430a to the second etching module 430b without leaving the controlled environment. As shown, the transfer may be performed using two transfer modules 410b, 410c, where the transfer module 410b removes the workpiece from the first etching module 430a and transfers it to the transfer module 410c, which then delivers the workpiece to the second etching module 430b. If the second etching module 430b operates under different parameters than the first etching module 430a, such as a different vacuum pressure, adjustments to the controlled environment may be made in the transfer modules 410b and 410c. Again, the common manufacturing platform 400 may include two identical second etching modules 430b on opposite sides of the transfer module 410c. With the first mandrel pattern 110 removed, the remaining first sidewall spacers 122 form a new feature pattern with twice the number of features or mandrels compared to the number of features or mandrels of the first mandrel pattern 110 and half the pitch of the first mandrel pattern 110.

[0039] Optionally, the workpiece may be subjected to one or more cleaning steps prior to further patterning operations. For example, cleaning may be performed in the same etching module 430 used in operation 308 or in another etching module 430, such as a third etching module 430c hosted on the common fabrication platform 400. If a third etching module 430c is used, a transfer module 410 is used to transfer the workpiece from the second etching module 430b to the third etching module 430c without leaving the controlled environment, e.g., without breaking vacuum. As shown, the transfer may be performed using two transfer modules 410c, 410d, where the transfer module 410c removes the workpiece from the second etching module 430b and transfers it to the transfer module 410d, which then provides the workpiece to the third etching module 430c. If the third etching module 430c operates under different parameters than the second etching module 430b, such as a different vacuum pressure, adjustments to the controlled environment may be made within the transfer module 410c and the transfer module 410d. Again, the common manufacturing platform 400 may include two identical third etching modules 430c on opposite sides of the transfer module 410d. In one embodiment, as shown in FIG. 4, the third etching module 430c is a COR tool for performing chemical oxide removal.

[0040] As indicated by arrow 310 in Figure 3, in operation 318, the first sidewall spacers 122 forming the new feature pattern may be used to transfer the new feature pattern to the underlying layer 106 to form the doubled pattern 108 in Figure IE. The doubled pattern 108 in Figure IE may be used as a second mandrel pattern 222 to quadruple the first mandrel pattern 110, as described below in operations 312-318 with reference to Figures 2A-2D and 3. Alternatively, the first sidewall spacers 122 forming the new feature pattern in Figure IE may be used as a second mandrel pattern 222 to quadruple the first mandrel pattern 110, as described below in operations 312-318 with reference to Figures 2A-2D and 3.

[0041] 2A and 3, in operation 312, and also without leaving the controlled environment, e.g., without breaking vacuum, a second thin film 230 is conformally deposited on the second mandrel pattern 222 and the underlayer 106. The second thin film 230 may include oxide, nitride, or silicon, e.g., titanium oxide. The deposition may be performed in the same film formation module 420 used in operation 304 or in a different film formation module 422 hosted on the common fabrication platform 400. A transfer module 410 is used to transfer the workpiece 100 from the third etching module 430c (or from the second etching module 430b if there is no third etching module 430c) to the film formation module 422 without breaking vacuum. As shown, the transfer may be performed using two transfer modules 410d, 410e, where the transfer module 410d retrieves the workpiece 100 from the third etching module 430c and transfers it to the transfer module 410e, which then provides the workpiece 100 to the film formation module 422. Additionally, as shown, a batch / debatching module 424 and a discharge / reconditioning module 426 may be inserted into the process flow on the common manufacturing platform 400 if there is a change in the number of workpieces 100 processed in the modules. In one embodiment, the film formation module 422 is a semi-batch deposition tool, e.g., a six-wafer tool, and the etching modules 430a-f are single-wafer tools. Thus, the transfer module 410 sequentially transfers the workpiece 100 to the batch / debatching module 424 for batch placement, and then the semi-batch (e.g., six workpieces) is transferred to the film formation module 422 by the transfer module 410e. After the semi-batch is processed, the transfer module 410e transfers the work pieces 100 to the unload / recondition module 426 to recondition the work pieces 100 and transfer them sequentially, for example, to the next single wafer tool by the transfer module 410f.If the film formation module 422 operates under different parameters than the third etching module 430c, such as a different vacuum pressure, adjustments to the controlled environment may be made within the transfer modules 410d and 410e and the batch / debatch module 424. Again, the common manufacturing platform 400 may include two identical film formation modules 422 on opposite sides of the transfer module 410e.

[0042] Thereafter, without leaving the controlled environment, e.g., without breaking vacuum, the transfer module 410f is used to transfer the workpiece 100 to an etching module 430, also hosted on the common fabrication platform 400. The etching module 430 may be the same etching module 430 used in operation 306 or another etching module 430, such as a fourth etching module 430d. If the fourth etching module 430d operates with different parameters than the film formation module 422, such as a different vacuum pressure, adjustments to the controlled environment may be made in the transfer modules 410e and 410f as well as the evacuation / reconditioning module 426. In operation 314, the second thin film 230 is etched, leaving the second thin film 230 on the sidewalls of the second mandrel pattern 222, which forms the second sidewall spacers 232, as shown in FIG. 2B. For example, operation 314 may be a second spacer reactive ion etching (RIE) process that creates second sidewall spacers 232 by removing the second thin film 230, e.g., from the underlayer 106, from the top surface of the second mandrel pattern 222 and from the bottom surface adjacent to the second mandrel pattern 222.

[0043] Thereafter, a second mandrel pull process is performed in operation 316, also without leaving the controlled environment, e.g., without breaking vacuum. The second mandrel pull process removes the second mandrel pattern 222 and leaves behind a residual thin film 230 to form a second sidewall spacer pattern 232, as shown in FIG. 2C. The second mandrel pull process may be performed in the same etching module 430 used in operation 308 or in another etching module, such as a fifth etching module 430e hosted on the common manufacturing platform 400. If a fifth etching module 430e is used, a transfer module 410 is used to transfer the workpiece 100 from the fourth etching module 430d to the fifth etching module 430e without leaving the controlled environment. As shown, the transfer may be performed using two transfer modules 410f, 410g, where the transfer module 410f removes the workpiece from the fourth etching module 430d and transfers it to the transfer module 410g, which then delivers the workpiece 100 to the fifth etching module 430e. If the fifth etching module 430e operates with different parameters than the fourth etching module 430d, such as a different vacuum pressure, adjustments to the controlled environment may be made in the transfer module 410f and the transfer module 410g. Again, the common manufacturing platform 400 may include two identical fifth etching modules 430e on opposite sides of the transfer module 410g. With the second mandrel pattern 222 removed, the remaining second sidewall spacers 232 form another new feature pattern with four times the number of features or mandrels compared to the number of features or mandrels of the first mandrel pattern 110 and a quarter of the pitch of the first mandrel pattern 110.

[0044] In operation 318, the second sidewall spacers 232 may be used to transfer the new feature pattern to the underlying layer 106 to form a four-fold pattern 236 as shown in FIG. 2D. As described above in operations 312-318 with reference to FIGS. 2A-2D and 3, the four-fold sidewall spacers 232 in FIG. 2C or the four-fold pattern 236 in FIG. 2D may be used as a third mandrel pattern 222 to eight-fold the first mandrel pattern 110. Operation 318, whether performed after operation 308 or after operation 316, may be performed in an etching module 430 on the common fabrication platform 400 without leaving the controlled environment or may be performed after leaving the common fabrication platform 400. If performed on the common fabrication platform 400, any etching module 430 may be used, including etching modules 430a-f or different etching modules (not shown). Once the process flow 300, or the portion of the process flow 300 performed on the common manufacturing platform 400, is completed, the workpiece 100 exits the common manufacturing platform 400 through another front-end module 402b, which may be identical to the front-end module 402a, although it is located at the back-end of the end-to-end configuration of modules on the common manufacturing platform 400. In a process generally opposite to that of the front-end module 402a, the workpiece 100 is sequentially transferred by the transfer module 410h to a load lock (where the controlled environment is removed) and then to a cassette (not shown) in the front-end module 402b. The common manufacturing platform 400 arranged in a substantially symmetrical manner has the advantage of providing redundancy such that if a module should become unavailable, the common manufacturing platform 400 can still operate at a reduced capacity.

[0045] In one embodiment, and as described in more detail below, the common manufacturing platform 400 advantageously includes an "active interdiction system." The active interdiction system includes a workpiece measurement area in a transfer module 410 hosted on the common manufacturing platform 400, or an integrated metrology module (not shown) hosted on the common manufacturing platform 400. The workpiece measurement area may be located in a dedicated area 410 of the transfer module, as described in more detail below. The workpiece measurement area or the metrology module may include an inspection system for collecting measurement data. As described in more detail below, the inspection system may include at least one light source for directing a light beam incident on the measurement surface of the workpiece, and at least one detector configured to receive light signals scattered from the measurement surface of the workpiece. The active interdiction system may further include an intelligence system hosted on the common manufacturing platform 400. The intelligence system is configured to collect data from the workpiece measurement area or the metrology module and control a sequence of integrated processing steps performed on the common manufacturing platform 400, such as the process flow 300.

[0046] For active interdiction according to embodiments of the present invention, a workpiece measurement region or metrology module collects real-time data "on the fly" related to attributes of features or layers on a semiconductor workpiece (e.g., film or feature thickness, feature depth, surface roughness, pattern shift, voids or other defects, loss of selectivity, lateral growth, uniformity, etc.) and uses such real-time data to simultaneously control integrated operating variables of integrated processing modules hosted on the common fabrication platform 400. For example, as described below with reference to operations 350-362 of FIG. 3, the data may be used in a feedback and / or feedforward manner to control operations performed on the workpiece in a subsequent module and / or to control operations performed on a subsequent workpiece in a previous module. In one embodiment, the common fabrication platform 400 includes a correction module, which may be a film formation module 420 or a film formation module 422, an etching module 430, or any other type of treatment module suitable for applying a corrective action or remedial treatment to the workpiece 100.

[0047] Unlike traditional metrology or process control, the workpiece never leaves the controlled environment to enter a stand-alone metrology tool, thereby minimizing oxidation and defect generation, and the measurements are non-destructive so that the workpiece is not sacrificed to obtain the data, thereby maximizing production output. Also, the data can be collected in real-time as part of the process flow to avoid adversely affecting production time and to allow in-process adjustments to the workpiece, or to subsequent workpieces that are processed sequentially on the common manufacturing platform 400. Furthermore, the measurements are not performed in the film formation or etching modules, thereby avoiding issues where the measurement device is exposed to process fluids. For example, by incorporating a workpiece measurement area in a transfer module, data can be acquired as the workpiece moves between processing tools with little delay in the process flow, without exposure to process fluids, and without leaving the controlled environment, e.g., without breaking vacuum. Although the "on-the-fly" data may not be as accurate as data acquired in a traditional destructive manner performed in a stand-alone metrology tool, the near-instantaneous feedback on the process flow and the ability to make real-time adjustments without interrupting the process flow or sacrificing yield is highly advantageous in high volume manufacturing.

[0048] With further reference to the process flow 300 of FIG. 3, the method may include inspecting the workpiece, e.g., performing metrology, i.e., acquiring measurement data, using an active interception system at any various points throughout the integrated method, without leaving the controlled environment, e.g., without breaking vacuum. Inspecting the workpiece may include characterizing one or more attributes of the workpiece and determining whether the attributes meet target conditions. For example, the inspection may include acquiring measurement data related to the attributes and determining whether defects, film coverage, thickness, uniformity, and / or selectivity conditions meet the condition goals. The following description focuses on acquiring measurement data, but it should be understood that other inspection techniques performed within the controlled environment of a common manufacturing platform are also within the scope of the present invention.

[0049] As described in more detail below, the active prevention system may include a single metrology module or workpiece measurement area on the common manufacturing platform 400, or may include multiple metrology modules or workpiece measurement areas on the common manufacturing platform 400. Each metrology operation is optional, as shown in phantom in FIG. 3, but may be advantageously performed at one or more points in the process flow to ensure that the workpiece 100 is within specifications and to reduce defects and EPE. In one embodiment, metrology data is obtained after each step of the integrated sequence of processing steps performed on the common manufacturing platform. The metrology data may be used to repair the workpiece in a correction module before leaving the common manufacturing platform and / or to modify parameters of the integrated sequence of processing steps for subsequent workpieces.

[0050] Broadly speaking, metrology data may be acquired in a controlled environment during a sequence of integrated processing steps associated with forming a sidewall spacer pattern, and a determination may be made based on the metrology data as to whether the thickness, width, or profile of the sidewall spacer pattern meets a target condition. If it is determined that the thickness, width, or profile of the sidewall spacer pattern does not meet the target condition, the workpiece may be processed in a correction module on a common fabrication platform to modify the sidewall spacer pattern. In one embodiment, if the target thickness, width, or profile of the sidewall spacer pattern is not met, the sidewall spacer pattern may be repaired by (i) selectively depositing additional material on the structure, (ii) conformally depositing additional material on the structure, (iii) reshaping the structure, (iv) etching the structure, (v) implanting a dopant into the structure, (vi) removing and reapplying a layer of material of the structure, or any combination of two or more thereof.

[0051] In one embodiment, if the throw or uniformity of a thin film applied in a film formation module on a common manufacturing platform does not meet the target throw or uniformity of the thin film, corrective action may be taken to repair the thin film. Repair of a conformally applied thin film may be done by removing the thin film, reapplying the thin film, conformally applying an additional thin film, etching the thin film, or a combination of two or more of these. For example, the workpiece may be transferred to a corrective etching module to remove the thin film or to partially etch the thin film, and / or the workpiece may be transferred to a corrective film formation module to reapply the thin film after it has been removed or to apply an additional thin film on top of the existing or partially etched thin film.

[0052] In one embodiment, if the thickness, width, or profile of a sidewall spacer formed in an etching module on a common manufacturing platform does not meet the target thickness, width, or profile of the sidewall spacer, corrective action may be taken to repair the sidewall spacer. The repair of the sidewall spacer may be performed by selectively depositing additional material on the sidewall spacer, reforming the sidewall spacer, implanting dopants into the sidewall spacer, or a combination of two or more of these. For example, the workpiece may be transferred to a corrective film formation module to selectively deposit spacer material, or may be transferred to one or more corrective film formation and / or etching modules to perform a sidewall spacer reformation process.

[0053] The correction module may be a different film formation module and etching module designated as a correction module on a common manufacturing platform, or may be another type of treatment module, such as a thermal annealing module, integrated onto a common manufacturing platform, or may be the same film formation module and etching module used to conformally apply the thin film, etch the thin film, and remove the mandrel pattern.

[0054] 3 with optional metrology operations. Operation 302 includes receiving a workpiece having a first mandrel pattern on a common fabrication platform. Operation 350 optionally includes performing metrology to obtain measurement data related to attributes of the input workpiece, such as attributes of the first mandrel pattern and / or an underlying layer on which the mandrel pattern is formed and onto which the final pattern is transferred, which may be used to adjust and / or control process parameters of any one of operations 304-318.

[0055] Operation 304 includes conformally applying a first thin film onto the first mandrel pattern using a film formation module hosted on the common manufacturing platform. Operation 352 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece onto which the conformal first thin film has been applied, such as attributes of the first thin film, the first mandrel pattern affected by the thin film deposition, and / or an underlying layer affected by the thin film deposition onto which the final pattern is transferred, and the measurement data may be used to adjust and / or control process parameters of any one of operations 306-318, may be used to make adjustments to input attributes of the workpiece in operation 302 or operation 304 for subsequent workpieces, or may be used to repair the workpiece before continuing processing. In one embodiment, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transported to a correction module to repair the conformally applied first thin film. For example, if the coverage or uniformity of a first thin film does not meet a target coverage or target uniformity of the first thin film, corrective action may be taken in one or more correction modules, such as removing the thin film and reapplying the thin film, conformally applying an additional thin film, etching the thin film, or a combination of two or more of these.

[0056] Operation 306 includes removing a first thin film (e.g., from an underlying layer) from an upper surface of the first mandrel pattern and a lower surface adjacent the first mandrel pattern (referred to as a spacer etch) using an etch module hosted on the common manufacturing platform to form first sidewall spacers. Operation 354 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece from which the first thin film was etched to form first sidewall spacers on the sidewalls of the first mandrel pattern, such as attributes of the first sidewall spacers, the first mandrel pattern affected by the spacer etch, and / or the underlying layer affected by the spacer etch, which measurement data may be used to adjust and / or control process parameters of any one of operations 308-318, may be used to make adjustments to input attributes of the workpiece for a subsequent workpiece in operation 302 or operations 304-306, or may be used to repair the workpiece before continuing processing. In one embodiment, if the measurement data indicates that one or more attributes do not meet the target condition, the workpiece may be transferred to a correction module to repair a first sidewall spacer on a sidewall of the mandrel pattern. For example, if the thickness, width, or profile of the sidewall spacer does not meet the target thickness, width, or profile of the sidewall spacer, corrective action may be taken in one or more correction modules, such as by selectively depositing additional material on the sidewall spacer, reshaping the sidewall spacer, implanting a dopant into the sidewall spacer, or a combination of two or more of these.

[0057] Operation 308 includes removing the first mandrel pattern (referred to as a mandrel pull) using an etch module hosted on the common fabrication platform to leave behind the first sidewall spacers. Operation 356 includes optionally performing metrology to obtain measurement data related to attributes of the workpiece having the first sidewall spacers, such as attributes of the first sidewall spacers and / or underlying layers affected by the mandrel pull, which may be used to adjust and / or control process parameters of any one of operations 310-318, may be used to make adjustments to the input attributes of the workpiece for subsequent workpieces in operation 302 or operations 304-308, or may be used to repair the workpiece before continuing processing. In one embodiment, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transported to a correction module to repair the first sidewall spacers. For example, if the thickness, width, or profile of a sidewall spacer does not meet the target thickness, width, or profile of the sidewall spacer, corrective action may be taken in one or more correction modules, such as by selectively depositing additional material on the sidewall spacer, reshaping the sidewall spacer, implanting dopants into the sidewall spacer, or a combination of two or more of these.

[0058] In a SADP embodiment, process flow 300 may proceed through SADP flow 310 to operation 318, described below, without operation 356 or after operation 356.

[0059] Operation 312 includes conformally applying a second thin film onto the first sidewall spacer, which serves as a second mandrel pattern, using a film formation module hosted on the common manufacturing platform. Operation 358 includes optionally performing metrology to obtain measurement data related to attributes of the workpiece to which the conformally applied second thin film has been applied, such as attributes of the second thin film, the second mandrel pattern affected by the thin film deposition, and / or an underlying layer affected by the thin film deposition, and the measurement data may be used to adjust and / or control process parameters of any one of operations 314-318, may be used to make adjustments to the input attributes of the workpiece in operation 302 or operations 304-308 for subsequent workpieces, or may be used to repair the workpiece before continuing processing. In one embodiment, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transported to a correction module to repair the conformally applied second thin film. For example, if the coverage or uniformity of the second thin film does not meet the target coverage or uniformity of the second thin film, corrective action may be taken in one or more correction modules, such as removing the thin film and reapplying the thin film, conformally applying an additional thin film, etching the thin film, or a combination of two or more of these.

[0060] Operation 314 includes removing the second thin film (e.g., from the underlying layer) from an upper surface of the second mandrel pattern and a lower surface adjacent the second mandrel pattern (referred to as a spacer etch) using an etch module hosted on the common manufacturing platform to form second sidewall spacers. Operation 360 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece from which the second thin film has been etched to form second sidewall spacers on the sidewalls of the second mandrel pattern, such as attributes of the second sidewall spacers, the second mandrel pattern affected by the spacer etch, and / or the underlying layer affected by the spacer etch, which measurement data may be used to adjust and / or control process parameters of any one of operations 316-318, may be used in operation 302 or operations 304-314 to make adjustments to the input attributes of the workpiece for a subsequent workpiece, or may be used to repair the workpiece before continuing processing. In one embodiment, if the measurement data indicates that one or more attributes do not meet the target condition, the workpiece may be transferred to a correction module to repair the second sidewall spacers on the sidewalls of the second mandrel pattern. For example, if the thickness, width, or profile of the sidewall spacers does not meet the target thickness, width, or profile of the sidewall spacers, corrective action may be taken in one or more correction modules, such as by selectively depositing additional material on the sidewall spacers, reshaping the sidewall spacers, implanting dopants into the sidewall spacers, or a combination of two or more of these.

[0061] Operation 316 includes removing the second mandrel pattern (referred to as a mandrel pull) using an etch module hosted on the common fabrication platform to leave behind second sidewall spacers. Operation 362 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece having the second sidewall spacers, such as attributes of the second sidewall spacers and / or underlying layers affected by the mandrel pull, which may be used to adjust and / or control process parameters in operation 318, to make adjustments to the input attributes of the workpiece for subsequent workpieces in operation 302 or operations 304-316, or to repair the workpiece before continuing processing. In one embodiment, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transported to a correction module to repair the second sidewall spacers. For example, if the thickness, width, or profile of a sidewall spacer does not meet the target thickness, width, or profile of the sidewall spacer, corrective action may be taken in one or more correction modules, such as by selectively depositing additional material on the sidewall spacer, reshaping the sidewall spacer, implanting dopants into the sidewall spacer, or a combination of two or more of these.

[0062] The process parameters as mentioned above may include any manipulated variables in a processing module, such as, but not limited to, gas flow rates; composition of etchants, deposition reactants, purge gases, etc.; chamber pressure; temperature; electrode spacing; power, etc. The intelligence system of the active prevention system is configured to collect the measurement data from the inspection system and control the sequence of integrated processing steps performed on the common manufacturing platform, for example, by making in-situ adjustments to processing parameters of a subsequent processing module for the workpiece being processed or by modifying process parameters of one or more processing modules for a subsequent workpiece. Thus, the acquired measurement data may be used to adjust processing parameters of the sequence of integrated processing steps to identify repairs required for the workpiece during the sequence of integrated processing steps to avoid the need to scrap the workpiece and / or for steps performed on the same workpiece after the measurement data was acquired or to process a subsequent workpiece to reduce the occurrence of target conditions not being met for the subsequent workpiece.

[0063] 5, there is provided another embodiment of a common fabrication platform 500 for performing a SAMP process, such as those previously described in FIGS. 1A-1E, 2A-2D, and 3, where like reference numbers are used to refer to like parts. Similar to FIG. 4 above, the common fabrication platform 500 includes a front-end module 402a and a front-end module 402b at each end of the common fabrication platform 500 for transporting workpieces 100 in and out of the common fabrication platform 500. The common fabrication platform 500 includes a plurality of transfer modules 410 for transporting workpieces in and out of a plurality of processing modules hosted on the common fabrication platform 500. The plurality of processing modules include one or more film formation modules 420, such as one or more deposition tools, and one or more etching modules 430, such as one or more dry etching tools, wet etching tools, and / or COR tools. As shown, two film formation modules 420 may be included, each coupled to one of the transfer modules 410, and the two film formation modules 420 may be the same type of tool or different types of tools. As further shown, a plurality of etching modules 430 may be included, with two etching modules 430 coupled to each of several transfer modules 410. Although six etching modules 430 are shown, fewer or more etching modules 430 may be included. The film formation module 420 may be used to perform operation 304 and operation 312. The etching module 430 may be used to perform operation 306, operation 308, operation 314, and operation 316, and optionally operation 318 and other cleaning or etching operations. Any of the processing modules may serve as a correction module to repair the workpiece, or additional processing modules may be added to perform corrective actions.The multiple processing modules generally form two lines 440, 450 from front end to back end, one line 440 down one side of the row of transport modules 410 and the other line 450 down the opposite side of the row of transport modules 410.

[0064] In one example, a single workpiece 100 is processed down line 440 from the front end to the back end, then transported back to the front end and processed again down line 450. Thus, a conformal deposition operation 304, a spacer etch operation 306, and a mandrel pull operation 308 are performed down line 440 to double the pattern, and then a conformal deposition operation 312, a spacer etch operation 314, and a mandrel pull operation 316 are performed down line 450 to quadruple the pattern, thereby repeating the operations in two passes down the end-to-end common fabrication platform 500. A wet etch or repair process may be performed at the end of line 440 (in a third etch module 430 shown in the sequence, or in a film formation module or other treatment module (not shown)) before transporting the workpiece 100 back to the front end to clean or repair the second mandrel pattern before repeating the operations in line 450. A COR or repair process may be performed at the end of line 450 (either in a third etching module 430 shown in sequence or in a film formation module or other treatment module (not shown)) to remove oxide from or repair the 4x patterns before exiting the common fabrication platform 500. Alternatively, operation 318 may be performed in an appropriate type of etching module in the third etching module 430 shown in line 450. In this example, the additional etching modules at the back end of lines 440, 450 may be different from each other because each of these etching modules 430 sequentially processes workpieces at only one stage of the integrated process flow 300.

[0065] In another example, the two lines 440, 450 operate independently, either in time-matched or time-staggered, to simultaneously process two workpieces 100, each of which travels down one of the lines 440 or 450 from the front end to the back end, then is transported back to the front end and processed again down the same line 440 or 450, respectively. Thus, a conformal deposition operation 304, a spacer etch operation 306, and a mandrel pull operation 308 are performed down each line 440 and line 450 to double the pattern on the two workpieces 100, and then a conformal deposition operation 312, a spacer etch operation 314, and a mandrel pull operation 316 are performed down the lines 440 and line 450 to quadruple the pattern on the two workpieces 100. This repeats the operations in two passes down the end-to-end common fabrication platform 500. A cleaning etch or repair process may be performed at the end of the first pass (at the third etching module 430 shown in the sequence or at a film formation module or other treatment module (not shown)) before transporting the workpiece 100 back to the front end to clean or repair the second mandrel pattern before repeating the operation. A cleaning etch, repair process, or pattern transfer etch (operation 318) may be performed at the end of the second pass (at the third etching module 430 shown in the sequence or at a film formation module or other treatment module (not shown)) before exiting the common fabrication platform 500. In this example, the third etching module 430 (or other type of correction module) are the same type of module because they each process workpieces at more than one stage of the integrated process flow 300. This example has the advantage of providing redundancy so that the common fabrication platform 500 can still operate at 50% capacity if a module needs to be unavailable.

[0066] In one embodiment, the common fabrication platform includes at least one deposition module for conformally depositing a thin film on the mandrel pattern, at least one etching module for performing spacer etching and mandrel pulling, and at least one transfer module for transporting workpieces between modules while maintaining a controlled environment throughout the integrated process flow. Advantageously, the at least one etching module includes at least two etching modules, one for spacer etching and one for mandrel pulling. In a further embodiment, the common fabrication platform includes at least one workpiece measurement area for obtaining measurement data related to one or more attributes of the workpiece, the at least one workpiece measurement area being located in a dedicated area of ​​the at least one transfer module or in a metrology module hosted on the common fabrication platform in a controlled environment. In one embodiment, the common fabrication platform includes at least one correction module for performing repairs of the workpiece, such as repairs of the conformally deposited thin film or sidewall spacers.

[0067] As can be appreciated by one of ordinary skill in the art, in order to provide an essentially continuous process flow through the common manufacturing platform, and therefore good throughput consistency, the number and arrangement of processing modules and metrology operations on the common manufacturing platform may be selected based on the processing times in different modules required to perform operations in the different modules.

[0068] In one embodiment, the multiple processing modules and integrated process flow on a common manufacturing platform are adapted for use in a multi-color SAMP process, enabling precision line cuts using self-aligned blocks (SABs) of different colors (i.e., different materials have different etch selectivities such that each color represents a different etch rate). In an embodiment, the integrated process flow for forming sidewall spacer patterns may include any sequence of process steps as described in the embodiments of U.S. Pat. No. 9,818,611 or U.S. Pat. No. 10,020,196, each of which is entitled "Methods of Forming Etch Masks for Sub-Resolution Substrate Patterning." This sequence of process steps is performed on the common manufacturing platform without leaving the controlled environment. Additionally, although double patterning and quadruple patterning are detailed above, the multiple processing modules and integrated process flow on a common manufacturing platform may be adapted for use in any multi-patterning process.

[0069] Figures 6A-6G illustrate one embodiment of a method for self-aligned triple patterning (SATP) of a workpiece, and Figure 7 is a flow chart of a process flow 700 corresponding to the method of Figures 6A-6G. Figures 4 and 5, as described above, illustrate an embodiment of a common manufacturing platform of the present invention that may be used to implement process flow 700.

[0070] In operation 702 of process flow 700, and as shown in FIGURE 6A, a workpiece 600 having a first mandrel pattern 610 formed thereon is provided to common manufacturing platform 400 or common manufacturing platform 500. Workpiece 600 may be as previously described for workpiece 100. Similarly, for simplicity, workpiece 600 is shown having a substrate 604 having an underlayer 606 thereon onto which the final pattern is transferred, with mandrel pattern 610 formed on underlayer 606, although it will be appreciated that the structure on which mandrel pattern 610 is formed may be a multi-layer structure in which underlayer 606 is merely one of multiple layers.

[0071] 4 and 5, a transfer module 410 or a transfer module 410a may be used to bring a work piece 600 into the controlled environment of the common manufacturing platform 400 or the common manufacturing platform 500. This controlled environment is maintained throughout the process flow 700. In an embodiment of the present invention in the common manufacturing platform 400 or the common manufacturing platform 500, in operation 702, the work piece 600 received in the controlled environment is loaded by the transfer module 410 or the transfer module 410a into a film formation module 420 hosted on the common manufacturing platform 400.

[0072] 6B and 7, in operation 704, a first thin film 620 is conformally deposited on the mandrel pattern 610 and the underlayer 606 in the film formation module 420. The first thin film 620 may include an oxide, a nitride, silicon, or any combination thereof, such as silicon nitride, silicon oxide, or silicon oxynitride.

[0073] Then, without leaving the controlled environment, e.g., without breaking vacuum, the workpiece 600 is transferred to the etching module 430 hosted on the common fabrication platform 400 or the common fabrication platform 500 using the transfer module 410 or the transfer module 410a and the transfer module 410b. For example, in the platform 400, the transfer module 410a removes the workpiece 600 from the film forming module 420 and transfers it to the transfer module 410b, which then delivers the workpiece to the first etching module 430a. In operation 706, the first thin film 620 is etched in the first etching module 430 or the first etching module 430a, leaving the first thin film 620 on the sidewalls of the mandrel pattern 110, and the residual thin film 620 forms the first sidewall spacer 622, as shown in FIG. 6C. For example, operation 706 may be a first spacer reactive ion etching (RIE) process that creates first sidewall spacers 622 .

[0074] 6D and 7, in operation 708, and also without leaving the controlled environment, e.g., without breaking vacuum, a second thin film 630 is conformally deposited on the first sidewall spacer 622, the mandrel pattern 610, and the underlayer 606. The second thin film 630 may include oxide, nitride, silicon, or any combination thereof, e.g., titanium oxide. The deposition may be performed in the same film formation module 420 used in operation 704, or in a second film formation module 420 or second film formation module 422 hosted on the common fabrication platform 400 or common fabrication platform 500. A transfer module 410 is used to transfer the workpiece 600 from the first etching module 430 to the second film formation module 420 or second film formation module 422 without breaking vacuum. It should be noted that the common manufacturing platform 500 can be modified to add a film formation module 420 between the first etching module 430 and the second etching module 430 of each of lines 440 and 450 to accommodate operation 708.

[0075] Thereafter, without leaving the controlled environment, e.g., without breaking vacuum, the workpiece 600 is transferred using one or more transfer modules 410 to a second etching module 430 hosted on the common fabrication platform 400 or common fabrication platform 500. In operation 710, the second thin film 630 is etched in the second etching module 430, leaving the second thin film 630 on the sidewalls of the first sidewall spacer 622, which forms the second sidewall spacer 632, as shown in FIG. 6E. For example, operation 710 may be a reactive ion etching (RIE) process of the second spacer to create the second sidewall spacer 632.

[0076] Thereafter, without leaving the controlled environment, e.g., without breaking vacuum, the workpiece 600 is transferred using one or more transfer modules 410 to a third etching module 430 hosted on the common fabrication platform 400 or the common fabrication platform 500. Thereafter, in operation 712, a spacer pull process is performed. The spacer pull process selectively removes the first sidewall spacers 622 and leaves behind the residual second thin film 630 to form the second sidewall spacers 632 and mandrel pattern 610, as shown in FIG. 6F. The spacer pull process may be performed in the same etching module 430 used in operation 706 or operation 710, or in another etching module 430 hosted on the common fabrication platform 400 or the common fabrication platform 500. One or more transfer modules 410 are used to transfer workpieces from one etching module to another etching module 430 without leaving the controlled environment, and adjustments to the controlled environment may be made in the transfer modules if the third etching module 430 operates at different parameters than the second etching module, such as a different vacuum pressure. With the first sidewall spacers 622 removed, the remaining second sidewall spacers 632 and mandrel pattern 610 form a new feature pattern with three times the number of features compared to the number of features or mandrels of the mandrel pattern 610 and one-third the pitch of the first mandrel pattern 610.

[0077] In operation 714 of Figure 7, second sidewall spacers 632 and mandrel pattern 610 may be used to transfer a pattern into underlying layer 606 to form 3x pattern 608 in Figure 6G.

[0078] Similar to process flow 300 of Figure 3, in process flow 700 of Figure 7, the method may include performing metrology using an active interdiction system at any various points throughout the integrated method without leaving the controlled environment, e.g., without breaking vacuum. The active interdiction system may include a single metrology module or workpiece measurement area on common manufacturing platform 400 or common manufacturing platform 500, or may include multiple metrology modules or workpiece measurement areas on common manufacturing platform 400 or common manufacturing platform 500. Each metrology operation is optional, as shown in phantom in Figure 7, but may be advantageously performed at one or more points in the process flow to ensure that workpiece 600 is within specifications and to reduce defects and EPE.

[0079] Without duplicating the details provided in the description of process flow 300, process flow 700 will now be briefly described, along with any optional metrology operations. Operation 750 optionally includes performing metrology to obtain measurement data related to attributes of the input workpiece, such as attributes of the mandrel pattern and / or the underlying layer on which the mandrel pattern is formed and onto which the final pattern is transferred, which may be used to adjust and / or control process parameters of any one of operations 704-714.

[0080] Operation 752 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece to which the conformally applied first thin film has been applied, such as attributes of the first thin film, the mandrel pattern affected by the thin film deposition, and / or an underlying layer affected by the thin film deposition onto which the final pattern is transferred, which may be used to adjust and / or control process parameters of any one of operations 706-718, may be used to make adjustments to the input attributes of the workpiece in operation 702 or operation 704 for a subsequent workpiece, or may be used to repair the workpiece before continuing processing. In one embodiment, as described above, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transported to a correction module to repair the conformally applied first thin film.

[0081] Operation 754 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece that has etched the first thin film to form first sidewall spacers on the sidewalls of the first mandrel pattern, such as attributes of the first sidewall spacers, the mandrel pattern affected by the spacer etch, and / or an underlying layer affected by the spacer etch, which may be used to adjust and / or control process parameters of any one of operations 708-714, may be used to make adjustments to the input attributes of the workpiece in operation 702 or operations 704-706 for a subsequent workpiece, or may be used to repair the workpiece before continuing processing. In one embodiment, as described above, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transported to a correction module to repair the first sidewall spacers on the sidewalls of the mandrel pattern.

[0082] Operation 756 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece to which the conformally applied second thin film has been applied, such as attributes of the second thin film, the mandrel pattern affected by the thin film deposition, the first sidewall spacer affected by the thin film deposition, and / or an underlying layer affected by the thin film deposition, which may be used to adjust and / or control process parameters of any one of operations 710-714, may be used to make adjustments to the input attributes of the workpiece for a subsequent workpiece in operation 702 or operations 704-708, or may be used to repair the workpiece before continuing processing. In one embodiment, as described above, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transferred to a correction module to repair the conformally applied second thin film.

[0083] Operation 758 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece having the second thin film etched to form the second sidewall spacers on the sidewalls of the first sidewall spacers, such as the second sidewall spacers, the first sidewall spacers affected by the spacer etch, the mandrel pattern affected by the spacer etch, and / or attributes of the underlying layer affected by the spacer etch, which may be used to adjust and / or control process parameters of any one of operations 712-714, may be used to make adjustments to the input attributes of the workpiece in operation 702 or operations 704-710 for subsequent workpieces, or may be used to repair the workpiece before continuing processing. In one embodiment, as described above, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transported to a correction module to repair the second sidewall spacers on the sidewalls of the first sidewall spacers.

[0084] Operation 760 optionally includes performing metrology to obtain measurement data related to attributes of the workpiece having the second sidewall spacers and mandrel pattern, such as attributes of the second sidewall spacers affected by the spacer pull, the mandrel pattern affected by the spacer pull, and / or attributes of the underlying layer affected by the spacer pull, which may be used to adjust and / or control process parameters in operation 714, may be used to make adjustments to the input attributes of the workpiece in operation 702 or operations 704-712 for subsequent workpieces, or may be used to repair the workpiece before continuing processing. In one embodiment, if the measurement data indicates that one or more attributes do not meet a target condition, the workpiece may be transported to a correction module to repair the second sidewall spacers and / or mandrel pattern forming a 3x feature pattern.

[0085] As disclosed herein, the term "metrology module" or "measurement module" refers to a module / system / sensor / tool ​​that can perform measurements on a workpiece to detect or determine various non-conformities or variations on the workpiece, such as parameter variations, or to detect or determine defects on the workpiece, such as any type of contamination. As used herein, the term "inspection system" generally refers to a tool or system of a metrology process or module that measures and collects data or signals related to the measurement. As further disclosed herein, the metrology module performs measurements and provides data for use by the processing platform. The terms "metrology module" and "measurement module" are used interchangeably herein and generally refer to a metrology or metrology or sensing tool used to detect and measure attributes of the workpiece that are indicative of the processing of the workpiece and layers and devices formed thereon.

[0086] To move workpieces between various processing modules, a common manufacturing platform typically incorporates one or more workpiece transfer modules hosted on the common manufacturing platform and configured to move workpieces between processing modules and measurement modules. The measurement modules may be coupled to workpiece transfer modules similar to the processing modules. In some embodiments of the invention, as disclosed herein, a measurement module or a corresponding inspection system is incorporated with or within the transfer module to perform measurements or metrology on the workpieces as they move between the processing modules. For example, the measurement module or a portion thereof may be located within the interior space of the transfer module. The combination of the transfer device and the measurement device is referred to herein as a transfer measurement module ("TMM").

[0087] In one embodiment, a common manufacturing platform including both the processing chambers and the metrology module is actively controlled by a system that processes metrology data related to attributes of the workpieces and uses the metrology data to control the movement and processing of the workpieces in a processing sequence. According to an embodiment of the invention, the control system uses the metrology data and other data to perform corrective actions based in part on the metrology data to provide active blocking of the processing sequence to correct non-conformities or defects. More specifically, the active blocking control system is hosted on the common manufacturing platform and configured to perform corrective actions based in part on the metrology data, where the workpiece corrective actions may be performed in a processing module of the platform that is upstream or downstream in the process sequence to address a situation where a non-conformity or defect is detected. In one embodiment of the invention, the workpieces are maintained in a controlled environment, e.g., under vacuum. That is, on the common manufacturing platform, the processing modules and the metrology module operate in a controlled environment, and a workpiece transport module transports the workpieces between multiple processing modules and one or more metrology modules in the processing sequence without leaving the controlled environment.

[0088] As used herein, the term "active interference" generally refers to a control system implemented to capture measurement / metrology data for various fabrication processes in real time to obtain data on attributes of the workpieces and thereby detect non-conformities or defects and corrective aspects of the control to correct or ameliorate the non-conformities or defects. The active interference control system uses the data to actively change the operation of modules implementing the processing sequences and / or process steps to correct and ameliorate various non-conformities in the semiconductor fabrication process. Thus, the active interference control system also interfaces with one or more transport modules (e.g., reference numeral 410) used to move the workpieces through the process. The active interference control system (reference numeral 822 in FIG. 8 and reference numeral 922 in FIGS. 9A-9D, described in more detail below) coordinates data collection and data analysis and detection of non-conformities in the fabrication process, and further directs the actions of multiple processing modules to address the detected non-conformities or defects. The active interference control system is generally implemented by one or more computers or computing devices as described herein. One or more computers or computing devices run a specially designed set of programs, such as deep learning programs or autonomous learning components, collectively referred to herein as active inhibition components. As can be appreciated, the active inhibition control system may incorporate multiple programs / components for coordinating data collection from various measurement modules and subsequent analysis. The active inhibition control system interfaces with multiple process modules in a common manufacturing platform to address various measured non-conformities / defects and correct or improve the non-conformities / defects. The active inhibition control system thereby controls one or more of the process modules and process sequences to achieve the desired results of the present invention, sometimes referred to as target conditions or predetermined thresholds.

[0089] The active blocking control system also controls the transport module to move the workpiece to an upstream and / or downstream processing module if a non-conformity / defect is detected. That is, depending on what is detected, the system of the present invention may move the workpiece further in the processing sequence or may guide the workpiece to a correction module or to an upstream processing module to correct or address the detected non-conformity or defect. In this way, feedforward and feedback mechanisms are provided via the transport module to provide the active blocking of the present invention. Additionally, the processing sequence may be influenced upstream or downstream for future workpieces.

[0090] The active blocking feature of the present invention uses collected measurement / metrology data to improve the performance, yield, throughput, and flexibility of manufacturing processes using run-to-run, wafer-to-wafer, and real-time process control within a wafer. The measurement data is collected in real-time during processing without removing the workpiece / substrate / wafer from the controlled processing environment. According to one feature of the present invention, in a common manufacturing platform, the measurement data may be captured while the substrate remains in a controlled environment, e.g., under vacuum. That is, the workpiece transport module is configured to transport the workpiece between multiple processing modules and the metrology module without leaving the controlled environment. The active blocking control can provide a multivariate model-based system developed with feed-forward and feedback mechanisms to automatically determine the optimal recipe for each workpiece based on state characteristics of both the incoming workpiece and the module or tool. The active blocking control system uses fabrication metrology data, process models, and advanced control algorithms to provide dynamic fine-tuning of intermediate process targets that enhance the final device targets. The inhibition system enables scalable control solutions across single chambers, process tools, multi-tools, process modules, and multi-process modules on a common manufacturing platform using similar building blocks, concepts, and algorithms as described herein.

[0091] FIG. 8 is a schematic diagram of another system for implementing an embodiment of the present invention on a common manufacturing platform 800. The platform 800 incorporates multiple processing modules / systems for performing integrated workpiece processing and workpiece measurement / metrology under the control of an active interference control system 822 according to an embodiment of the present invention. FIG. 8 illustrates an embodiment of the present invention in which one or more workpiece measurement modules are coupled to one or more workpiece processing modules via one or more transfer modules. As such, in accordance with a feature of the present invention, inspection of the workpiece may be performed while the workpiece remains within the common manufacturing platform to provide measurement data related to attributes of the workpiece, such as those related to material properties of the workpiece and various thin films, layers, and features formed thereon. As described herein, measurements and analysis may be performed immediately upon completion of a processing step, such as an etching or deposition step, and the collected measurement data may be analyzed and then used within the common manufacturing platform to address any measurements or features that are out of specification or non-conformance with respect to the workpiece design parameters or that indicate defects. The workpiece does not need to be removed from the common manufacturing platform to take corrective action, but rather can remain in a controlled environment.

[0092] Referring to FIG. 8, a common manufacturing platform 800 is illustrated. The platform 800 includes a front-end module 802 for introducing one or more workpieces to the manufacturing platform. As is known, the front-end module (FEM) may incorporate one or more cassettes that hold the workpieces. The front-end module may be maintained at atmospheric pressure, but may be purged with an inert gas to provide a clean environment. Thus, one or more of the workpieces may be transferred to a transfer module 810, such as through one or more load lock chambers (not shown) as described herein. The transfer module of FIG. 8 is a transfer and measurement module (TMM) that includes a metrology tool or inspection system integrated therein to capture data from the workpieces. Multiple TMMs 810 may be connected to provide movement of the workpieces through a desired sequence. The transfer and measurement module 810 is coupled to multiple processing modules. Such processing modules may provide a variety of different process steps or functions and may include one or more etching modules 830, one or more film formation modules 820, one or more cleaning modules 840, and one or more measurement modules 812a, 812b, 812c, 812d. According to embodiments of the invention as further disclosed herein, the measurement modules may be accessed via the transfer module 810 before or after each process step. In one embodiment, the measurement modules, such as the measurement modules 812c, 812d, are located outside the transfer module 810 and are accessed for insertion and receipt of workpieces, as are the various process modules, and may be referred to herein as metrology modules. The metrology modules reside within the controlled environment of the common manufacturing platform 800. Alternatively, the measurement modules, such as the modules 812a, 812b, or at least a portion thereof, may be located within the corresponding transfer module. More specifically, all or part of the measurement modules 812a, 812b are located within the transfer module 810 and define a measurement area within the transfer module 810 where a workpiece may be positioned for measurement during the transfer process.The measurement area is located within a dedicated area of ​​the transport module 810 and is accessible by the transport mechanism of the transport module for positioning the workpiece. As described, this essentially makes the transport module a transport and measurement module (TMM) as described herein.

[0093] Generally, the transfer module defines a chamber therein that houses the transfer robot. The transfer robot can move the workpieces under vacuum through various gate valves and access or transfer ports to various process or measurement modules. By maintaining the measurement module on the common fabrication platform 800, the measurement module can be quickly accessed, such as during one or more of the processing steps, to provide the necessary metrology analysis data on the fly, which is used to address any workpieces that are out of specification or non-conforming to the workpiece design plan for a particular workpiece, or to address detectable defects. In that way, real-time data is provided to enable the fabricator to recognize issues in the system early, so that remedial action may be taken in the current processing sequence, such as in subsequent, previous, and / or prior processing steps, depending on the captured data and the detected non-conformities or defects. In that way, productivity and efficiency can be increased, process monitoring expenses can be reduced, and waste product in the form of rejected or rejected workpieces can be reduced. All of this results in significant cost savings for the fabricator or device manufacturer.

[0094] As described above, in one embodiment of the invention incorporating active rejection control system 822, one or more metrology modules are hosted on a common manufacturing platform along with a processing module for providing measurement data related to attributes of the workpiece. The data is used by active rejection control system 822 to detect non-conformities and, if a non-conformity is detected, to implement corrective actions on the workpiece. If a non-conformity is detected, corrective actions are implemented upstream and / or downstream in the process sequence.

[0095] Referring to FIG. 9A, an exemplary common manufacturing platform 900 suitable for implementing the ASD method is illustrated. The common manufacturing platform 900 incorporates multiple modules and processing tools for processing semiconductor substrates to fabricate integrated circuits and other devices. The common manufacturing platform 900 incorporates one or more metrology / measurement modules incorporated within the common manufacturing platform 900 along with the processing modules. For example, the platform 900 may incorporate multiple processing modules coupled to a transfer module as shown. In some embodiments, the measurement module or tool is also located, at least in part, within the transfer module. Thus, the workpiece may be processed and then immediately transferred to the measurement module to collect various fabrication data related to attributes of the workpiece that are further processed by the active interdiction control system. The active interdiction control system collects data from the processing and measurement modules and controls the process sequence performed on the common manufacturing platform through selective movement of the workpiece and control of one or more of the multiple processing modules. Furthermore, the processing system of the platform 900 may transfer the workpiece within the chambers of the transfer module and between the various processing modules and the measurement / measurement modules without leaving the controlled environment of the common manufacturing platform 900. The active interference control system utilizes information obtained from workpiece measurements obtained from one or more metrology modules to control the continuous process flow of the various processing modules. Additionally, the active interference control system incorporates in-situ measurements and data of the processing modules to control the continuous process flow of the platform 900. The on-substrate metrology data obtained in a controlled environment may be utilized alone or in combination with the in-situ processing module metrology data for process flow control and process improvements in accordance with the present invention.

[0096] Referring again to FIG. 9A, the common manufacturing platform 900 includes a front-end module 902 for introducing work pieces into a controlled environment. The exemplary platform 900 includes a number of processing modules 920a-920d and one or more measurement / metrology modules 916, organized around a work piece transfer module 910. The common manufacturing platform 900 includes a cassette module 904 and a load lock chamber 908 coupled to the front end module 902. The front end module 902 is generally maintained at atmospheric pressure, but may be purged with an inert gas to provide a clean environment. The load lock chamber 908 is coupled to a central work piece transfer module 910 and may be used to transfer work pieces from the front end module 902 to the work piece transfer module 910 for processing in the controlled environment of the platform 900.

[0097] The workpiece transport module 910 may be maintained at a very low base pressure (e.g., 5x10-8 Torr or less) or may be constantly purged with an inert gas. According to the present invention, the measurement / metrology module 916 may be operated under atmospheric pressure or under vacuum conditions. According to one embodiment, the measurement module 916 is kept under vacuum and wafers are processed in the platform 900 and measured without leaving the vacuum. As further disclosed herein, the metrology module may include one or more inspection systems or analytical tools capable of measuring one or more material properties or attributes of the workpiece and / or thin films and layers deposited on the workpiece or attributes of devices formed on the workpiece. As used herein, the term "attribute" is used to indicate a measurable feature or characteristic of the workpiece, a layer on the workpiece, a feature or device on the workpiece, etc., that reflects the processing quality of a processing sequence. Thus, the measurement data associated with the attribute is used to adjust the process sequence by analyzing the measurement data together with other in-situ processing data by an active interference control system. For example, the measured attribute data reflects a non-conformity or defect on the workpiece that is subject to corrective processing.

[0098] 9A depicts essentially a single measurement module 716. However, a particular common manufacturing platform 900 may incorporate multiple such measurement modules integrated around one or more workpiece transport systems, such as workpiece transport module 910. Such measurement modules 916 may also be stand-alone modules accessed via the transport module 910, like a process module. Such stand-alone modules generally incorporate therein an inspection system configured to engage a workpiece disposed within a measurement area of ​​the module and measure data related to attributes of the workpiece.

[0099] In alternative embodiments of the invention, the measurement module may be implemented in a measurement area located in a dedicated area of ​​the interior space of the transport chamber defined by the transport module 910. Still further, the measurement module may be integrated, at least a portion of which is located within the interior space of the workpiece transport module, and the measurement module or other components of its particular inspection system are integrated externally to the workpiece transport module and connected via openings or windows to a dedicated area of ​​the interior space forming the measurement area in which the workpiece is located or through which the workpiece passes.

[0100] The metrology modules of the systems and platforms of the present invention include one or more inspection systems operable to measure data related to attributes of the workpiece. Such data may be associated with one or more attributes reflecting the quality of the processing sequence and the quality of the layers and features and devices formed on the workpiece. The collected metrology data, along with the data of the processing modules, are then analyzed by an active interference control system to detect various non-conformities and / or defects on the workpiece or workpiece layers / features. The system then provides corrective treatment of the workpiece, such as in an upstream or downstream processing module in the process sequence, to improve / correct the non-conformities or defects and improve the overall process.

[0101] According to an embodiment of the invention, measurements taken and data generated by the metrology module or its inspection system are associated with one or more attributes of the workpiece. For example, the measured attributes may include, for example, layer thickness, layer coverage, layer profile on the workpiece, edge placement location, edge placement error (EPE) of a particular feature, critical dimension (CD), block critical dimension (CD), grid critical dimension (CD), line width roughness (LWR), line edge roughness (LER), block LWR, grid LWR, properties related to selective deposition processes, properties related to selective etch processes, physical properties, optical properties, electrical properties, refractive index, resistance, current, voltage, temperature, mass, velocity, acceleration, or some combination thereof related to electronic devices fabricated on the workpiece. The list of attributes measured to generate the metrology data of the invention is not limited and may include other attribute data that may be used in the processing of the workpiece and fabrication of the device.

[0102] As further described herein, the measurement module and / or inspection system used to provide the attribute data may implement a number of measurement tools and methods to provide the measurement and metrology of the present invention. The measurement module and / or inspection system may include optical or non-optical methods. Optical methods may include high-resolution optical imaging and microscopy techniques (e.g., bright field, dark field, coherent / incoherent / partially coherent, polarized, Nomarski, etc.), hyperspectral (multispectral) imaging, interferometry (e.g., phase shift, phase modulation, differential interference contrast, heterodyne, Fourier transform, frequency modulation, etc.), spectroscopy (e.g., optical emission, optical absorption, various wavelength ranges, various spectral resolutions, etc.), Fourier transform infrared spectroscopy (FTIR) reflectometry, scatterometry, spectroscopic ellipsometry, polarimetry, refractometry, etc. Non-optical methods may include electronic methods (e.g., RF, microwave, etc.), acoustic methods, photoacoustic methods, mass spectrometry, residual gas analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and the like. For example, an inspection system used to measure data related to attributes of a workpiece may use one or more of the following techniques or devices: optical thin film measurements such as reflectometry, interferometry, scatterometry, profilometry, ellipsometry, etc.; X-ray measurements such as X-ray photoelectron spectroscopy (XPS), X-ray fluorescence spectroscopy (XRF), X-ray diffraction (XRD), X-ray reflectometry (XRR), etc.; ion scattering spectroscopy, low energy ion scattering (LEIS) spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, reflection absorption infrared spectroscopy, electron beam inspection, particle inspection, particle counting devices and inspection, optical inspection, dopant concentration measurements, film resistivity measurements such as four-point probes, eddy current measurements, etc.; microbalances, accelerometer measurements, voltage probes, current probes, temperature probes for thermal measurements, or strain gauges.The list of measurement techniques or devices for generating the measurement data of the present invention is not limiting and may include other techniques or devices that may be used to obtain data useful in the processing of workpieces and fabrication of devices in accordance with the present invention.

[0103] The measurement module and / or inspection system may perform measurements on various substrate or workpiece structures, including either production workpieces or non-production substrates, i.e., monitoring substrates, passing through the processing system. With respect to production workpieces, measurements may be performed on designated target structures, designated device regions, or any region, both device-like and device-non-device-like structures. Measurements may also be performed on test structures created on the workpiece, which may include pitch structures, area structures, density structures, etc.

[0104] Referring again to FIG. 9A, coupled to the transfer chamber 910 are a number of process modules 920a-920d configured to process substrates such as semiconductor or silicon (Si) workpieces. The Si workpieces can have diameters of, for example, 150 mm, 200 mm, 300 mm, 450 mm, or greater than 450 mm. The various process modules and measurement modules all interface with the workpiece transfer module 910 via suitable gated access ports, for example having valves G. According to an embodiment of the present invention disclosed herein, the first process module 920a may perform a process step on the workpieces, and the second process module 920b may form a self-aligned monolayer (SAM) on the workpieces. The third process module 920c may deposit a film on the workpieces by a suitable selective deposition process, and the fourth process module 920d may selectively etch or clean the workpieces.

[0105] The transfer module 910 is configured to transfer workpieces between any of the processing modules 920a-920d and then to the metrology module 916 either before or after a particular processing step. Figure 9A further shows a gate valve G that provides isolation at the access ports between adjacent processing chambers / tool ​​components. As shown in the embodiment of Figure 9A, the processing modules 920a-920d and the metrology module 916 may be directly coupled to the transfer chamber 910 by the gate valve G, and such direct coupling can significantly improve substrate throughput in accordance with the present invention.

[0106] The common manufacturing platform 900 includes one or more controllers or control systems 922. The one or more controllers or control systems 922 may be coupled to control the various process modules and corresponding process chambers / tools shown in FIG. 9A during an integrated processing and measurement / metrology process as disclosed herein. The controller / control system 922 may also be coupled to one or more additional controllers / computers / databases (not shown). The control system 922 may obtain setup and / or configuration information from the additional controllers / computers or servers over a network. The control system 922 is used to configure and run any or all of the process modules and process tools, collect data from the various measurement modules, in-situ data from the process modules, and provide the active interception of the present invention. The controller 922 collects, provides, processes, stores, and displays data from any or all of the process modules and tool components. The control system 922 can include a number of different programs and applications and processing engines for analyzing measured data and in-situ process data, as well as implementing algorithms such as deep learning networks, machine learning algorithms, autonomous learning algorithms, and other algorithms for providing the active interdiction of the present invention, as further described herein.

[0107] As described further herein, the active blocking control system 922 may be implemented in one or more computing devices having a microprocessor, suitable memory, and digital I / O ports, and may generate sufficient control signals and voltages to communicate and activate inputs to the various modules of the platform 900 and exchange information with the substrate processing systems executing on the platform 900. To operate the platform, the control system 922 monitors metrology data from the various metrology modules of the platform, as well as outputs from the processing systems of the platform 900. For example, a program stored in the memory of the control system 922 may be used to activate inputs to the various processing and transport systems according to a process recipe or sequence to perform the desired integrated workpiece processing.

[0108] The control system 922 also uses the measurement data and in-situ process data output by the processing module to detect non-conformities or defects in the workpiece and to take corrective action. As described herein, the control system 922 may be implemented as a general-purpose computer system that performs some or all of the microprocessor-based processing steps of the present invention in response to the processor executing one or more sequences of one or more instructions contained in a program in memory. Such instructions may be read into the control system's memory from another computer-readable medium, such as a hard disk or a removable media drive. One or more processors of a multi-processing configuration may also be used as the microprocessor element of the control system to execute the sequences of instructions contained in the memory. In alternative embodiments, hardwired circuitry may be used in place of or in combination with software instructions to implement the present invention. Thus, embodiments are not limited to any specific combination of hardware circuitry and software to perform the metrology driver process of the present invention as described herein.

[0109] The active prevention control system 922 may be located locally relative to the platform 900 or may be located remotely relative to the platform 900. For example, the controller 922 may exchange data with the platform 900 using at least one of a direct connection, an intranet connection, an internet connection, or a wireless connection. The control system 922 may be connected to an intranet at a customer site (i.e., device manufacturer, etc.), for example, or to an intranet at a vendor site (i.e., equipment manufacturer), for example. In addition, for example, the control system 922 may be connected to other systems or controls via suitable wired or wireless connections. Furthermore, another computer (i.e., controller, server, etc.) may access and exchange data with the control system 922, for example, via at least one of a direct wired or wireless connection, such as an intranet connection and / or an internet connection. Also, as will be appreciated by those skilled in the art, the control system 922 exchanges data with modules of the common manufacturing platform 900 via suitable wired or wireless connections. A processing module may have its own individual control system (not shown) that takes input data for controlling the processing chambers and tools and subsystems of the module, and provides in-situ output data regarding process parameters and process metrics during the processing sequence.

[0110] 9A and 9B in particular, and according to one embodiment, measurement data may be acquired in a measurement / metrology module 916, which is a separate module on the platform 900, coupled to the transfer module 910. Generally, the transfer module 910 has a chamber that incorporates one or more transport mechanisms or robots 914 that handle and move workpieces through the interior space of the chamber and into and out of the processing modules during a processing sequence.

[0111] More specifically, the transport mechanism 914 is disposed within an interior space 913 of the transport module 910, which may define a controlled environment, and is configured to move the workpiece through the interior space and environment, selectively into and out of a number of process modules 920a-920d and a measurement module 916, or into and out of a measurement area within a dedicated area of ​​the interior space for a measurement inspection system to measure data. In accordance with one aspect of the invention, the interior space 913 of the transport module 910 and the process modules 920a-920d and the measurement module 916 are coupled together on a common manufacturing platform 900, so that generally, a controlled environment for the workpiece may be maintained throughout most or all of the measurement and processing sequence. Such a controlled environment may include a vacuum environment or an inert gas atmosphere within the transport module or the measurement module.

[0112] The transfer module 910 includes a number of access or side ports, each with a suitable gate G, through which work pieces are moved to and from the multiple processing modules 920a-920d. To provide the necessary processing sequences for efficient throughput on the platform 900, the multiple processing modules 920a-920d include modules handling various workpiece processing steps on a common platform, including one or more etching modules and one or more film formation or deposition modules. As shown in FIG. 7A, the measurement module 916 is also coupled to the transfer module 910 at one of the side or access ports through a suitable gate G. In other embodiments, the measurement module is coupled to the transfer module at a port formed on the top of the transfer module. In yet another embodiment as described herein, the transfer module also serves as a measurement module, and at least a portion of the measurement module for capturing measurement data is incorporated or located within the interior space of the transfer module. The transport and measurement module (TMM) of such an embodiment, as shown in Figures 9C-9D, includes a measurement area located within a dedicated region of the transport module's interior space.

[0113] The active rejection control system 922 collects workpiece measurement data substantially on-the-fly as the substrate moves between one or more of the processing modules and the measurement / metrology module 916 in the processing sequence. The data is captured and then analyzed and processed to detect non-conformities and defects and provide corrective actions as described herein. The active rejection control system 922 provides the necessary control of the processing steps of the sequence to make control adjustments to the various fabrication processing steps being performed to correct the detected non-conformities / defects. The adjustments may be made in order to process steps and processing modules preceding or upstream of the captured measurement data and / or process steps following or downstream of the measurement data. Alternatively, the appropriate corrective action or corrective action may include ejecting the workpiece from the platform 900 to avoid wasting additional time and material on the unsalvageable workpiece.

[0114] Referring to FIG. 9B, one exemplary measurement module 916 is illustrated that incorporates an inspection system 930 for performing measurements on workpieces in real time with respect to processing sequences performed on the common manufacturing platform 900.

[0115] As described herein, the inspection system 930 measures data related to attributes of the workpiece. The inspection system 930 incorporates one or more signal sources 932 that direct a measurement signal 934 toward the workpiece 936. The incident signal 934 is reflected or scattered from the surface of the workpiece 936, and the scattered signal 935 is captured by a detector 940. The detector 940 generates measurement data 950, which may then be directed to an active rejection control system 922, as described herein. In one embodiment, the workpiece 936 is positioned by a transport mechanism 914 on a measurement platform 938, which may translate laterally and up and down and rotate, as indicated by the arrows in FIG. 9B, so that the measurement signal 934 can be directed to various suitable locations on the workpiece 936.

[0116] That is, in the embodiment of Figure 9B, the measurement module includes a separate support mechanism 938 for supporting a workpiece 936 disposed within the measurement module 916. The inspection system engages the support mechanism 938 to measure data related to attributes of the workpiece supported on the support mechanism. In such a situation, the support mechanism 938 in the measurement module 916 is generally separate from the transport mechanism that moves and positions the workpiece 936 on the support mechanism.

[0117] A separate support mechanism may translate the workpiece 936, such as by vertical and / or horizontal movement, and may also rotate the workpiece 936 to provide at least two degrees of freedom to measure data related to attributes of the workpiece 936 as described herein. The support mechanism may also incorporate temperature control elements therein to control the temperature of the workpiece. Thus, in the embodiment of FIG. 9B, the support mechanism provides the support and movement of the workpiece 936 necessary for the measurement of data after the workpiece 936 is placed thereon by the transport mechanism. In an alternative embodiment, the transport mechanism may provide the functionality to support and move the workpiece 936 for engagement with the inspection system 930 to measure data related to attributes of the workpiece 936.

[0118] The captured measurement data 950 may then be directed to the control system 922 for further evaluation and analysis to determine a particular action for the measured workpiece. If the measurement data indicates that the measured parameters are within the desired design and fabrication process specifications and / or there is no detection of actionable defects, the workpiece may proceed normally through the process flow within the platform 900. Alternatively, if the measurement data 950 indicates that the workpiece cannot be corrected or improved, the workpiece may be removed from further processing. Alternatively, according to an embodiment of the present invention, the active prevention control system 922 may analyze the data and provide corrective actions as one or more corrective steps to be taken for the workpiece or at various process steps of the overall process flow to correct the current workpiece and also to prevent the need for corrective action on other workpieces subsequently processed on the platform 900. Specifically, with reference to FIG. 9B, the active prevention control system 922 may incorporate one or more process steps and process components therein for effecting corrections in the process flow. First, the necessary metrology data 950 may be captured and pre-processed, as indicated by block 954. Then, modeling and data analysis is performed on the captured data, as well as any in-situ processing data associated with one or more of the processing modules and process steps, as indicated by block 956. The modeling and analysis may utilize artificial intelligence, including deep learning and autonomous learning programs and components. The analysis may then provide corrective process control, in which one or more of the processing steps and processing modules are controlled to correct or remedy recognized or detected non-conformities or defects in layers and features that are out of specification for the overall design of the platform fabrication.The corrective process control of block 958 may be provided to one or more of the processing steps or processing modules and may be applied to one or more processing steps that precede in time (upstream) the capture of the metrology data 950 or may be applied to one or more process steps that follow (downstream) the capture of the metrology data 950 within the overall substrate fabrication according to the desired design. The active rejection control system 922 and its processes represented by blocks 954, 956, and 958 may be incorporated into software executed by one or more computers of the control system 922 and / or components of that system.

[0119] According to an embodiment of the invention, the inspection system for acquiring the measurement data engages the workpiece by performing contact or non-contact measurements or metrology depending on the attribute or type of measurement to be measured. A combination of both contact and non-contact measurements may be used. Depending on the location of the inspection system, a part of the inspection system may be located partially or entirely within the interior space or chamber of the module. In the embodiment of FIG. 9A disclosed herein, a dedicated measurement module 916 may completely house the inspection system. Alternatively, a part of the measurement module may be located inside the interior space of the chamber, such as within the interior space of the workpiece transport module, with another part of the measurement module located outside the chamber. Such an embodiment is shown, for example, in FIG. 9D, which illustrates a transport measurement module using a measurement area located in a dedicated area of ​​the transport chamber interior space, and the inspection system is configured to engage a workpiece located in the measurement area for measuring data related to the attribute of the workpiece.

[0120] The support mechanism 938 holding the workpiece 936 or the transport mechanism 914 may translate and rotate to provide measurements of different areas on the workpiece 936. In that manner, measurement data may be captured at different portions or sections across the workpiece. Thus, the ability to perform continuous or point-by-point measurements reduces overall measurement and processing time.

[0121] For example, the inspection system measures data over a portion of the workpiece equal to or greater than 1 square centimeter. Alternatively, the inspection system measures or images a substantial portion of the workpiece equal to or greater than 90% of the workpiece's working surface area. As described above, the inspection system may perform measurements at multiple discrete locations on the workpiece's working surface, or may perform a continuous measurement sequence over a portion of the workpiece. For example, the inspection system may perform measurements along a path that extends across or partially across the workpiece. Such a path may include a line, a series of lines, an arc, a circular curve, a helical curve, an Archimedean spiral, a logarithmic spiral, a golden spiral, or some combination thereof. There may also be several inspection systems where the signal source / detector pairs 932, 940 may each be different inspection signals from different inspection systems and may be signals of different forms. For example, depending on the inspection system, one signal source / detector pair 932, 940 may use optical signals and another signal source / detector pair 932, 940 may use electromagnetic signals.

[0122] The inspection system may perform multiple measurements of attributes of the workpiece while the workpiece is in a measurement module or in a dedicated area of ​​a transport measurement module as described herein. The measurements may be performed simultaneously in time, i.e., different inspection systems may perform measurements at the same time, or various inspection systems may operate at different times. For example, it may be necessary to move or position the workpiece in one position for one type of measurement or inspection system, and then move or position the workpiece for another measurement by the same or a different type of inspection system.

[0123] The inspection system may be a non-contact system to provide non-contact measurement and metrology. Alternatively, one or more of the inspection systems of the measurement module or transport measurement module may use contact sensors that are moved and positioned on the surface of the workpiece to perform measurements. Inspection systems provided by the present invention may incorporate a combination of contact and non-contact inspection systems to collect measurement data related to attributes of the workpiece.

[0124] As previously discussed, an inspection system implemented in a measurement module or transport measurement module may be stationary while a support mechanism or workpiece transport mechanism moves the workpiece into engagement with the inspection system and measurements are taken at different regions of the workpiece. Alternatively, the inspection system 930, or portions thereof, may be movable relative to the workpiece support mechanism 938, workpiece transport mechanism 914, and the module. The inspection system may be configured to translate and / or rotate relative to a stationary workpiece to obtain measurement data from regions of the workpiece.

[0125] In other embodiments of the invention, the inspection system may be embedded in or part of the workpiece support mechanism. The inspection system 930 may be mounted on or supported by the support mechanism 938. Thus, when the workpiece is placed on the support mechanism, the workpiece is in a suitable position for engagement by the inspection system. The inspection system 930 may be embedded in the support mechanism such that it is located below or adjacent to the placed workpiece to provide measurement data related to, for example, mass or temperature measurements of the workpiece.

[0126] FIG. 9C illustrates a common manufacturing platform 900' incorporating a transport module 910' according to an embodiment of the invention that uses a dedicated area to form a measurement area where measurement data can be collected from a workpiece as it passes through. In that way, the workpiece can be processed and measured while remaining in a controlled environment, such as a vacuum environment, as described herein. The workpiece does not need to leave the environment of the platform 900' to determine how the process is progressing and to detect non-conformities or defects. Thus, an embodiment such as that shown in FIG. 9C forms a transport and measurement module (TMM) that can be utilized with one or more processing modules or as part of a common manufacturing platform. Additionally, multiple transport and measurement modules may be utilized and connected together to coordinate and form a larger common manufacturing platform.

[0127] The inspection system incorporated in the transport and measurement module (TMM) operates similarly to other inspection systems described herein. Such an inspection system shown in FIG. 9D, for example, illustrates only one particular inspection system. However, other inspection systems and features as described above are also applicable to the transport mechanism module shown in FIG. 9C. Accordingly, some common reference numbers are used in FIGS. 9C-9D as previously described herein.

[0128] The platform 900' incorporates a workpiece transfer module 910' that provides measurement / metrology data. The transfer and measurement module (TMM) 910' includes a workpiece transfer mechanism, such as in the form of a handling robot 914, within the interior space of a transfer chamber 913. The transfer mechanism 914, similar to the platform 900, is operable to move one or more workpieces through the transfer module 910' and between various processing modules coupled to the transfer module 910' within a common manufacturing platform. According to one aspect of the invention, the transfer chamber 913 defines an interior space that includes a dedicated area used for measurement. A measurement area 915 of the TMM 910' is located within the dedicated area. The measurement area / area 915 is in proximity to one or more inspection systems 930 for measurement.

[0129] More specifically, the measurement area 915 is located within the transport chamber 913 so as not to interfere with the primary purpose of the transport and measurement module in moving the workpiece through the process sequence and into and out of the various processing modules. The measurement area defines one or more locations for positioning the workpiece for measurement. To that end, one or more inspection systems are configured to engage the workpiece disposed within the measurement area of ​​the transport chamber 913. The inspection system is then operable to measure data related to attributes of the workpiece, in accordance with the present invention. As discussed with respect to the inspection systems disclosed herein, a support mechanism may be located within the measurement area 915 to support the workpiece during collection of measurement data by the inspection system. Alternatively, the transport mechanism 914 may provide positioning and support for the workpiece within the measurement area 915 of the transport chamber. In accordance with embodiments of the present invention, the workpiece may be moved into or through the measurement area 915 during the processing sequence to obtain measurement data from one or more inspection systems associated with that measurement area. Although a single measurement area is shown in FIG. 9C for illustrative purposes, multiple measurement areas 915 may be incorporated into the TMM 910′.

[0130] 9D, the TMM module 710′ incorporates one or more inspection systems 930 located within a measurement region 915 to provide the ability to acquire real-time measurements and metrology data during a processing sequence. In one embodiment, the measurement region 915 in the TMM 910′ incorporates a support mechanism 938 that receives the workpiece from mechanism 914 for measurement in the chamber 913. The metrology data is captured as the workpiece moves between the processing modules. Alternatively, as described above, the transport mechanism or robot 914 may actually function as the support mechanism for moving the workpiece relative to the inspection system 930 in the TMM 910′. Still further, the inspection system 930 in the TMM 910′ may also incorporate a stationary workpiece, with the inspection system 930 itself moving. Similarly, the inspection system 930 may be incorporated as part of or embedded with the support mechanism.

[0131] The measurement module or inspection system 930 may be entirely housed within the TMM 910' to perform the measurements. In other embodiments, at least a portion of the measurement module or inspection system is disposed within the interior space of the TMM 910', as shown in FIG. 9D, to define a measurement region within a dedicated region of the interior space, while other portions may be external to the TMM 910'. More specifically, the measurement region 915 is defined and located within a dedicated region of the interior space of the transfer chamber 913. The signal source and signal detector elements of the inspection system 930 may be located outside the transfer chamber interior space 913, while the workpiece support mechanism 938 and the transfer mechanism 914 for supporting the workpiece 936 are housed within the transfer chamber 913. To that end, the inspection signal 934 passes through a suitable access port 942, which is substantially transparent to the passage of the inspection signal 934 from the inspection system 930, enters the interior space 913, and engages the workpiece 936 disposed within the measurement region 915. As discussed above, the inspection signal 934 may include an electromagnetic signal, an optical signal, a particle beam, a charged particle beam, or some combination of such signals. The access port 942 may be appropriately configured to operate with a particular inspection system and source of the inspection signal. For example, the access port 942 may include a window, an opening, a valve, a shutter, and an aperture, or some combination of different structures to form an access port, to allow the incoming inspection signal to engage the workpiece 936. To that end, at least a portion of the inspection system 930 may be generally located above a top surface of the transfer chamber 913.

[0132] Additional advantages and modifications will readily occur to those skilled in the art. The invention in its broader aspects is therefore not limited to the specific details, representative apparatus and method, and illustrative examples shown and described. Accordingly, departures may be made from such details without departing from the scope of the general inventive concept.

Claims

1. 1. A method of self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps performed on a common fabrication platform hosting multiple processing modules, including one or more film formation modules, one or more etching modules, and one or more transfer modules, comprising: The integrated processing sequence comprises: receiving a workpiece onto the common manufacturing platform, the workpiece having a mandrel pattern formed thereon, the mandrel pattern including a plurality of first features separated by a first pitch distance; forming a sidewall spacer pattern based at least in part on the mandrel pattern using the one or more film formation modules and the one or more etching modules, the sidewall spacer pattern including a plurality of second features separated by a second pitch distance, the first pitch distance being greater than the second pitch distance; obtaining metrology data relating to the step of forming the sidewall spacer pattern, the metrology data being used to determine a thickness, width, or profile of the sidewall spacer pattern; if the thickness, width, or profile of the sidewall spacer pattern does not match a target thickness, width, or profile of the sidewall spacer pattern; (i) selectively depositing additional material onto the structure; (ii) conformally depositing an additional material onto the structure; (iii) reforming the structure; (iv) etching the structure; (v) implanting a dopant into the structure; (vi) removing and replacing a layer of material of the structure; or Any combination of two or more of these repairing the sidewall spacer pattern; having the integrated sequence of processing steps is performed within a controlled environment in the common manufacturing platform without leaving the controlled environment; The method, wherein the one or more transfer modules are used to transfer the workpiece between the plurality of processing modules while maintaining the workpiece within the controlled environment.

2. The step of forming a sidewall spacer pattern includes: conformally depositing a thin film over the mandrel pattern in one of the one or more thin film formation modules; removing the thin film from an upper surface of the mandrel pattern and a lower surface adjacent the mandrel pattern in one of the one or more etching modules, leaving the thin film on sidewalls of the mandrel pattern, thereby forming sidewall spacers; removing the mandrel pattern from the workpiece in one of the one or more etching modules, leaving behind the sidewall spacers, the sidewall spacers forming the sidewall spacer pattern having a multiple of a number of features of the removed mandrel pattern; 2. The method of claim 1, comprising:

3. The step of repairing the sidewall spacer pattern includes: the thin film conformality or uniformity does not meet the target thin film conformality or target uniformity; removing the membrane and replacing the membrane; conformally depositing an additional thin film; Etching the thin film; or A combination of two or more of these repairing the conformally deposited thin film; if the thickness, width, or profile of the sidewall spacer does not match a target thickness, width, or profile of the sidewall spacer; selectively depositing additional material on said sidewall spacers; reforming the sidewall spacers; implanting dopants into the sidewall spacers; or A combination of two or more of these repairing the sidewall spacers; The method of claim 2, comprising:

4. The one or more thin film forming modules include at least a first thin film forming module that conformally deposits the thin film; The method of claim 2 , wherein the one or more etching modules comprises at least a first etching module for removing the thin film and a second etching module for removing the mandrel pattern.

5. The integrated sequence further comprises: using the sidewall spacer pattern as another mandrel pattern and repeating the process steps of conformally depositing the thin film, removing the thin film, and removing the another mandrel pattern one or more times; having The method of claim 2 , wherein each iteration increases the number of features until a target pattern is obtained.

6. The one or more thin film forming modules include at least a first thin film forming module that conformally deposits the thin film, and an additional thin film forming module for each repetition of the step of conformally depositing the thin film; 6. The method of claim 5, wherein the one or more etching modules include at least a first etching module to remove the thin film, a second etching module to remove the mandrel pattern, and two additional etching modules for each repetition of the steps of removing the thin film and removing the further mandrel pattern.

7. The method of claim 2 , wherein removing the thin film comprises alternating between passivating the thin film and etching the thin film.

8. 3. The method of claim 2, wherein removing the mandrel pattern comprises alternating between passivating the mandrel pattern and etching the mandrel pattern until the features of the mandrel pattern are removed from the workpiece.

9. The method of claim 2 , wherein the mandrel pattern comprises a material selected from the group of materials consisting of silicon, amorphous carbon, and a photoresist polymer.

10. The method of claim 2 , wherein the thin film comprises an oxide layer, a nitride layer, or a combination thereof.

11. The step of forming a sidewall spacer pattern includes: conformally depositing a first thin film onto the mandrel pattern in one of the one or more film-forming modules; removing the thin film from an upper surface of the mandrel pattern and a lower surface adjacent the mandrel pattern in one of the one or more etching modules, leaving the first thin film on sidewalls of the mandrel pattern, thereby forming first sidewall spacers; conformally depositing a second thin film on the first sidewall spacers and the mandrel pattern in one of the one or more film formation modules; removing the second thin film from an upper surface of the first sidewall spacer and the mandrel pattern and from a lower surface adjacent the first sidewall spacer in one of the one or more etching modules, leaving the second thin film on a sidewall of the first sidewall spacer, thereby forming a second sidewall spacer; removing the first sidewall spacers from the workpiece in one of the one or more etching modules, leaving the second sidewall spacers and the mandrel pattern to form a feature pattern having a multiple of a number of features of the removed mandrel pattern; The method of claim 1 , comprising:

12. The step of repairing the sidewall spacer pattern includes: if the conformality or uniformity of the first film does not meet the target conformality or target uniformity of the first film, repairing the conformally deposited first film by removing the first film and reinstalling the first film, conformally depositing an additional film, etching the first film, or a combination of two or more thereof; if the conformality or uniformity of the second film does not meet the target conformality or target uniformity of the second film, repairing the conformally deposited second film by removing the second film and reinstalling the second film, conformally depositing an additional film, etching the second film, or a combination of two or more thereof; if the thickness, width, or profile of the first sidewall spacer does not match a target thickness, width, or profile of the first sidewall spacer, repairing the first sidewall spacer by selectively depositing additional material on the first sidewall spacer, reforming the first sidewall spacer, implanting the first sidewall spacer with a dopant, or a combination of two or more thereof; or if the thickness, width, or profile of the second sidewall spacer does not match a target thickness, width, or profile of the second sidewall spacer, repairing the second sidewall spacer by selectively depositing additional material on the second sidewall spacer, reforming the second sidewall spacer, implanting a dopant into the second sidewall spacer, or a combination of two or more thereof; The method of claim 11 , comprising:

13. The one or more film forming modules include at least a first film forming module that conformally deposits the first thin film, and a second film forming module that conformally deposits the second thin film; 12. The method of claim 11 , wherein the one or more etching modules include at least a first etching module to remove the first thin film, a second etching module to remove the second thin film, and a third etching module to remove the first sidewall spacers.

14. 12. The method of claim 11 , wherein removing the first and second films comprises alternating between passivating the first and second films and etching the first and second films.

15. 12. The method of claim 11 , wherein removing the first sidewall spacer comprises alternating between passivating the first sidewall spacer and etching the first sidewall spacer until the first sidewall spacer is removed from the workpiece.

16. The method of claim 1 , wherein the controlled environment comprises a vacuum environment, an inert gas atmosphere, or a combination thereof.

17. 17. The method of claim 16, wherein the one or more film formation modules include a vacuum environment, and the one or more transfer modules transfer the work pieces into and out of the one or more film formation modules without breaking vacuum.

18. 20. The method of claim 16, wherein the one or more etching modules include at least one dry etching module operating in a vacuum environment, and the one or more transfer modules transfer the workpiece into and out of the at least one dry etching module without breaking vacuum.

19. the one or more transfer modules further comprising a workpiece measurement area disposed within at least one dedicated area of ​​the one or more transfer modules; The method of claim 1 , wherein obtaining the measurement data is performed by delivering the workpiece to the workpiece measurement area during at least one of the transfers of the workpiece between the plurality of processing modules.

20. the common manufacturing platform includes one or more metrology modules; 2. The method of claim 1 , wherein obtaining the metrology data is performed by transferring the workpiece to the metrology module between one or more of the processing steps of the integrated sequence of processing steps without leaving the controlled environment.

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