Image Sensor

Abstract

To solve the problem that a high dynamic range sensor design is needed.SOLUTION: An image sensor includes a first unit 100. The first unit includes: a first photodiode 110 having a first dimension; a second photodiode 120 disposed adjacent to the first photodiode and having a second dimension larger than the first dimension; a first color filter 130 overlapping a first photodiode and a second photodiode; and a first internal reflector 150 disposed in the first color filter and overlapping the first photodiode. The first internal reflector has an inclined light receiving surface 152 inclined from an upper surface of the first color filter toward the second photodiode, and a refractive index of the first internal reflector is smaller than that of the first color filter.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to image sensors. [Background technology]

[0002] High-speed image sensors have been widely used in many applications in various fields such as automotive, machine vision, professional videography, etc. The technology for manufacturing image sensors, especially complementary metal-oxide semiconductor (CMOS) image sensors, has continued to advance rapidly. For example, the need for higher frame rates and reduced power consumption has driven further miniaturization and integration of such image sensors.

[0003] In some technology fields, such as the automotive industry, there is a continuous effort to improve the overall safety of vehicles while driving by equipping vehicles with digital video cameras and providing small displays inside the cabin for the driver. It is desirable to recognize moving objects accurately and detect them with high color fidelity under all light conditions. In such applications, 10 -1 Lux (for night vision) to 10 5 High dynamic range (HDR) is required to capture a range of scene illumination up to 100 lux (bright sunlight and direct headlight conditions). This high dynamic range corresponds to a dynamic range of at least 100 dB or more. Current CMOS sensors have difficulty achieving this range due to their full well and noise floor limitations. To extend the use of CMOS image sensors into the high dynamic range field, high dynamic range sensor designs are required. Summary of the Invention

[0004] An aspect of the present disclosure provides an image sensor including a first unit, the first unit comprising a first photodiode having a first dimension, a second photodiode disposed adjacent to the first photodiode and having a second dimension larger than the first dimension, a first color filter overlapping the first photodiode and the second photodiode, and a first internal reflector disposed on the first color filter and overlapping the first photodiode, the first internal reflector having an inclined light receiving surface inclined from a top surface of the first color filter toward the second photodiode, and a refractive index of the first internal reflector being smaller than a refractive index of the first color filter.

[0005] According to some embodiments of the present disclosure, the refractive index of the first internal reflector is greater than one.

[0006] According to some embodiments of the present disclosure, the difference between the refractive index of the first internal reflector and the refractive index of the first color filter is greater than 0.2.

[0007] According to some embodiments of the present disclosure, the first unit further includes a grid surrounding the first color filter, and a ratio of a height of the first internal reflector to a height of the grid is 0.3 to 1.

[0008] According to some embodiments of the present disclosure, the first internal reflector has a fifth dimension that is greater than the first dimension of the first photodiode and less than the sum of the first dimension of the first photodiode and half the second dimension of the second photodiode.

[0009] According to some embodiments of the present disclosure, the first unit further includes a grid surrounding the first color filter. The first internal reflector has an angle θ between the inclined light receiving surface and the first photodiode. 1 and has an angle θ 1 teeth,

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[0010] According to some embodiments of the present disclosure, the first color filter extends continuously from the first photodiode to the second photodiode.

[0011] According to some embodiments of the present disclosure, the first photodiode and the second photodiode share an axis of symmetry.

[0012] According to some embodiments of the present disclosure, the first internal reflector is made of a transparent organic material.

[0013] According to some embodiments of the present disclosure, the first internal reflector is a triangular prism.

[0014] According to some embodiments of the present disclosure, the image sensor further comprises a second unit including a third photodiode having a third dimension, a fourth photodiode disposed adjacent to the third photodiode and having a fourth dimension larger than the third dimension, a second color filter overlapping the third photodiode and the fourth photodiode, and a second internal reflector disposed on the second color filter and overlapping the third photodiode, the second internal reflector having an inclined light receiving surface inclined from a top surface of the second color filter toward the fourth photodiode, a refractive index of the second internal reflector being smaller than a refractive index of the second color filter, and a transparency of the second internal reflector being different from a transparency of the first internal reflector.

[0015] According to some embodiments of the present disclosure, the refractive index of the second internal reflector is greater than one.

[0016] According to some embodiments of the present disclosure, the difference between the refractive index of the second internal reflector and the refractive index of the second color filter is greater than 0.2.

[0017] According to some embodiments of the present disclosure, the second unit further includes a grid surrounding the second color filter, and a ratio of a height of the second internal reflector to a height of the grid is 0.3 to 1.

[0018] According to some embodiments of the present disclosure, the second internal reflector has a sixth dimension that is greater than the third dimension of the third photodiode and less than the sum of the third dimension of the third photodiode and half the fourth dimension of the fourth photodiode.

[0019] According to some embodiments of the present disclosure, the second unit further includes a grid surrounding the second color filter, and the second internal reflector has an angle θ between the inclined light receiving surface and the third photodiode. 2 and has an angle θ 2 but

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[0020] According to some embodiments of the present disclosure, the second color filter extends continuously from the third photodiode to the fourth photodiode.

[0021] According to some embodiments of the present disclosure, the second internal reflector has an extinction coefficient of 0.1 to 0.3.

[0022] According to some embodiments of the present disclosure, the second internal reflector is a triangular prism.

[0023] According to some embodiments of the present disclosure, the first unit further includes a first lens over the first photodiode and a second lens over the second photodiode.

[0024] It is to be understood that both the foregoing general description and the following detailed description are by way of example and are intended to provide further explanation of the invention as claimed. [Brief description of the drawings]

[0025] The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0026] [Figure 1] FIG. 2 is a top view of an image sensor according to some embodiments of the present disclosure. [Diagram 2] 2 is a cross-sectional view taken along line AA of FIG. 1, showing a cross-section of a first unit according to some embodiments of the present disclosure. [Figure 3A] 1A-1C are schematic diagrams of different optical paths of the first unit according to some embodiments of the present disclosure. [Figure 3B] 1A-1C are schematic diagrams of different optical paths of the first unit according to some embodiments of the present disclosure. [Figure 3C] 1A-1C are schematic diagrams of different optical paths of the first unit according to some embodiments of the present disclosure. [Figure 4] 1 is a cross-sectional view of a different embodiment of the first unit of the present disclosure. [Diagram 5] 1 is a cross-sectional view of a different embodiment of the first unit of the present disclosure. [Figure 6] 2 is a cross-sectional view taken along line BB of FIG. 1, showing a cross-section of a second unit according to some embodiments of the present disclosure. [Figure 7] 2 is a cross-sectional view taken along line CC of FIG. 1, showing a cross-section of a third unit according to some embodiments of the present disclosure. [Figure 8]4 is a normalized sensitivity peak of a large photodiode of a unit of an image sensor according to some embodiments of the present disclosure. [Figure 9] 4 is a normalized sensitivity peak of a small photodiode of a unit of an image sensor according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.

[0028] Referring to Fig. 1, this figure is a top view of an image sensor according to some embodiments of the present disclosure. The image sensor 10 includes a plurality of first units 100, a plurality of second units 200, and a plurality of third units 300. The first units 100, the second units 200, and the third units 300 have different optical properties and structural designs. In some embodiments, the ratio and arrangement of the first units 100, the second units 200, and the third units 300 of the image sensor 10 can be designed according to different requirements.

[0029] 1 and 2, FIG. 2 shows a cross-section of a first unit according to some embodiments of the present disclosure, in a cross-sectional view taken along line AA in FIG. 1. The first unit 100 has a first dimension W 1 and a first photodiode 110 having a second dimension W 2 The second photodiode 120 is disposed adjacent to the first photodiode 110 and has a second dimension W 2 is the first dimension W of the first photodiode 110 1 In some embodiments, the first photodiode 110 and the second photodiode 120 share an axis of symmetry L.

[0030] More specifically, the first unit 100 includes a deep trench isolation structure 102 configured to isolate a first photodiode 110 from a second photodiode 120. A first dimension W of the first photodiode 110 is 1 is measured between the center-to-center distance of a pair of deep trench isolation structures 102 on opposite sides of the first photodiode 110 in the direction of the symmetry axis L, and the second dimension W 2 is measured between the center-to-center distance of a pair of deep trench isolation structures 102 on opposite sides of the second photodiode 120 in the direction of the axis of symmetry L.

[0031] The first unit 100 further includes a first color filter 130 overlapping the first photodiode 110 and the second photodiode 120. The first color filter 130 can be an R / G / B color filter or a C / Y / M color filter. The first color filter 130 extends continuously from the first photodiode 110 to the second photodiode 120.

[0032] The first unit 100 further includes a first grid 140 surrounding the first color filter 130. The first color filter 130 overlaps the first photodiode 110 and the second photodiode 120 and is spaced apart from the second dimension W of the second photodiode 120. 2 is the first dimension W of the first photodiode 110 1 Being larger, the first grid 140 is not rectangular in shape and does not have a portion between the first photodiode 110 and the second photodiode 120 .

[0033] More specifically, the first color filter 130 has a first portion 132 directly over the first photodiode 110 and a second portion 134 directly over the second photodiode 120, and the first portion 132 and the second portion 134 transmit the same wavelength band. The first portion 132 of the first color filter 130 is directly connected to the second portion 134 of the first color filter 130 without any portion of the first grid 140 therebetween.

[0034] The first unit 100 further includes a first internal reflector 150 disposed within the first color filter 130 and overlapping the first photodiode 110. In some embodiments, the first internal reflector 150 is a triangular prism. In some embodiments, the first internal reflector 150 is made of a transparent organic material. The first internal reflector 150 has an inclined light-receiving surface 152 and an apex 154 pointing to the second photodiode 120. More specifically, the first internal reflector 150 has a triangular cross section, a bottom surface 151 of the first internal reflector 150 is parallel to and adjacent to the light-receiving surface of the first photodiode 110, a side surface 153 of the first internal reflector 150 is perpendicular to the light-receiving surface of the first photodiode 110, and the inclined light-receiving surface 152 interconnects the bottom surface 151 and the side surface 153 of the first internal reflector 150 and is inclined from the top surface of the first color filter 130 toward the second photodiode 120. In some embodiments, the first internal reflector 150 is completely embedded in the first color filter 130 .

[0035] The refractive index of the first internal reflector 150 is smaller than that of the first color filter 130, and the interface between the first internal reflector 150 and the first color filter 130 changes the optical path of the directed light, resulting in a larger dimension W 2In some embodiments, the refractive index of the first internal reflector 150 is greater than 1. In some embodiments, the difference between the refractive index of the first internal reflector 150 and the refractive index of the first color filter 130 is greater than 0.2.

[0036] The first unit 100 further includes a first lens 160 and a second lens 170. The first lens 160 is disposed on the first photodiode 110, and the second lens 170 is disposed on the second photodiode 120. In addition, the size of the second lens 170 is larger than the size of the first lens 160.

[0037] 3A-3C are schematic diagrams of different optical paths of the first unit 100 according to some embodiments of the present disclosure. The optical paths of the first unit 100 are determined according to at least the refractive index difference between the first internal reflector 150 and the first color filter 130, the tilt angle of the first internal reflector 150, and the incidence angle of the incident light.

[0038] In some situations, as shown in FIG. 3A, the incident light L 1 The incidence angle Φ 1 is substantially equal to the total internal reflection (TIR) ​​angle of the interface between the first internal reflector 150 and the first color filter 130. 1 When the incident light L reaches the interface from the first color filter 130 to the first internal reflector 150, 1 is not refracted by the first internal reflector 150 and is not reflected by the first color filter 130. 1 is substantially transmitted along the interface between the first internal reflector 150 and the first color filter 130, and thus most of the incident light L 1 goes to the second photodiode 120.

[0039] In some other situations, as shown in FIG. 2 The incidence angle Φ 2is greater than the TIR angle of the interface between the first internal reflector 150 and the first color filter 130. 2 When the incident light L reaches the interface from the first color filter 130 to the first internal reflector 150, 2 The incident light L is not refracted by the first internal reflector 150 and is totally reflected by the first color filter 130. 2 is substantially transmitted through the first color filter 130, and therefore most of the incident light L 2 goes to the second photodiode 120.

[0040] In still other situations, as shown in FIG. 3C, the incident light L 3 The incidence angle Φ 3 is smaller than the TIR angle of the interface between the first internal reflector 150 and the first color filter 130. L3 When the incident light L reaches the interface from the first color filter 130 to the first internal reflector 150, 3 A part of the incident light L is refracted by the first internal reflector 150 and then enters the first photodiode 110. 3 Another part of the light is reflected by the first color filter 130 and then enters the second photodiode 120. The amount of light received by the second photodiode 120 includes the incident light that is directly incident on the second photodiode 120 and a part of the incident light from the first photodiode 110.

[0041] As described in FIGS. 3A-3C, the addition of a first internal reflector 150 to the first color filter 130 rearranges the optical path of the light incident on the first unit 100, reducing the dimension W 1 The sensitivity of the first photodiode 110, which has a small size, is reduced by the first internal reflector 150. 2 The sensitivity of the second photodiode 120 , which has a larger refractive index, can be improved by the first internal reflector 150 .

[0042] Referring back to FIG. 2, the structure of the first internal reflector 150 is carefully designed to control the optical path of the incident light. In some embodiments, the height H of the first grid 140 is 1 Height H of the first internal reflector 150 relative to 2 The ratio of the fifth dimension W to the second photodiode 120 is in the range of 0.3 to 1. If the first internal reflector 150 is too tall or too short, it will not be able to guide at least a portion of the incident light to the second photodiode 120. In some embodiments, the first internal reflector 150 has a fifth dimension W 5 and a fifth dimension W 5 is the first dimension W of the first photodiode 110 1 and a first dimension W 1 and the second dimension W of the second photodiode 120. 2 1 and half of the second photodiode 120. That is, the first internal reflector 150 overlaps at least the first photodiode 110 and does not overlap more than half of the second photodiode 120. In some embodiments, the first internal reflector 150 overlaps the first photodiode 110 and a portion of the second photodiode 120.

[0043] In some embodiments, the first internal reflector 150 has an angle θ between the inclined light receiving surface 152 and the first photodiode 110 (e.g., the bottom surface 151 of the first internal reflector 150). 1 and has an angle θ 1 teeth,

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[0044] Therefore, as shown in FIGS. 4 and 5, which are cross-sectional views of different embodiments of the first unit of the present disclosure, the height H 2 As the fifth dimension W of the first internal reflector 150 becomes larger, 5 On the other hand, the height H of the first internal reflector 150 2 When the fifth dimension W of the first internal reflector 150 is lowered, 5 4, the first internal reflector 150 is shorter than the first color filter 130, and the first internal reflector 150 is on the first photodiode 110 and not on the second photodiode 120. In some embodiments, as shown in FIG. 5, the first internal reflector 150 is on the first photodiode 110, on a portion of the deep trench isolation structure 102 between the first photodiode 110 and the second photodiode 120, and partially on the second photodiode 120.

[0045] 6, which shows a cross-section of a second unit according to some embodiments of the present disclosure, in a cross-sectional view taken along line BB in FIG. 1. The second unit 200 has a third dimension W 3 a third photodiode 210 having a fourth dimension W 4 The fourth photodiode 220 is disposed adjacent to the third photodiode 210 and has a fourth dimension W 4 is the third dimension W of the third photodiode 210 3 In some embodiments, the third photodiode 210 and the fourth photodiode 220 share an axis of symmetry L′.

[0046] More specifically, the second unit 200 includes a deep trench isolation structure 202 configured to isolate the third photodiode 210 from the fourth photodiode 220. A third dimension W of the third photodiode 210 3is measured between the center-to-center distance of a pair of deep trench isolation structures 202 on opposite sides of the third photodiode 210 in the direction of the symmetry axis L′, and the fourth dimension W 4 is measured between the center-to-center distance of a pair of deep trench isolation structures 202 on opposite sides of the fourth photodiode 220 in the direction of the symmetry axis L′.

[0047] The second unit 200 further includes a second color filter 230 overlapping the third photodiode 210 and the fourth photodiode 220. The second color filter 230 can be an R / G / B color filter or a C / Y / M color filter. The second color filter 230 extends continuously from the third photodiode 210 to the fourth photodiode 220. In some embodiments, the color of the second color filter 230 can be the same as or different from the color of the first color filter 130.

[0048] The second unit 200 further includes a second grid 240 surrounding the second color filter 230. The second color filter 230 overlaps the third photodiode 210 and the fourth photodiode 220 and is spaced apart from the fourth dimension W of the fourth photodiode 220. 4 is the third dimension W of the third photodiode 210 3 Being larger, the second grid 240 is not rectangular in shape and does not have a portion between the third photodiode 210 and the fourth photodiode 220 .

[0049] More specifically, the second color filter 230 has a first portion 232 directly over the third photodiode 210 and a second portion 234 directly over the fourth photodiode 220, the first portion 232 and the second portion 234 transmitting the same wavelength band. The first portion 232 of the second color filter 230 is directly connected to the second portion 234 of the second color filter 230 without any portion of the second grid 240 therebetween.

[0050] The second unit 200 further includes a second internal reflector 250 disposed on the second color filter 230 and overlapping the third photodiode 210. The refractive index of the second internal reflector 250 is smaller than the refractive index of the second color filter 230, and the transparency of the second internal reflector 250 is different from the transparency of the first internal reflector 150. For example, the first internal reflector 150 is made of a transparent material, and the transparency of the second internal reflector 250 is smaller than the transparency of the first internal reflector 150. That is, the second internal reflector 250 has an extinction coefficient greater than zero. In some embodiments, the extinction coefficient of the second internal reflector 250 is 0.1 to 0.3.

[0051] In some embodiments, the second internal reflector 250 is a triangular prism with an extinction coefficient greater than zero. The second internal reflector 250 has an inclined light-receiving surface 252 and an apex 254 pointing to the fourth photodiode 220. More specifically, the second internal reflector 250 has a triangular cross-section, with a bottom surface 251 of the second internal reflector 250 parallel to and adjacent to the light-receiving surface of the third photodiode 210, a side surface 253 of the second internal reflector 250 perpendicular to the light-receiving surface of the third photodiode 210, and an inclined light-receiving surface 252 interconnecting the bottom surface 251 and the side surface 253 of the second internal reflector 250 and inclining from the top surface of the second color filter 230 toward the fourth photodiode 220. In some embodiments, the second internal reflector 250 is completely embedded in the second color filter 230. The second unit 200 further includes a third lens 260 over the third photodiode 210 and a fourth lens 270 over the fourth photodiode 220 .

[0052] Similar to the first unit 100, the refractive index of the second internal reflector 250 is smaller than that of the second color filter 230, and the interface between the second internal reflector 250 and the second color filter 230 changes the optical path of the directed light, resulting in a larger dimension W 4In some embodiments, the refractive index of the second internal reflector 250 is greater than 1. In some embodiments, the difference between the refractive index of the second internal reflector 250 and the refractive index of the second color filter 230 is greater than 0.2.

[0053] In some embodiments, the height H of the second grid 240 1 The height H of the second internal reflector 250 relative to 3 The ratio of the sixth dimension W to the fourth photodiode 220 is in the range of 0.3 to 1. If the second internal reflector 250 is too tall or too short, it will fail to guide at least a portion of the incident light to the fourth photodiode 220. In some embodiments, the second internal reflector 250 has a sixth dimension W 6 and a sixth dimension W 6 is the third dimension W of the third photodiode 210 3 The third dimension W of the third photodiode 210 is larger. 3 and a fourth dimension W of the fourth photodiode 220. 4 . That is, the second internal reflector 250 overlaps at least the third photodiode 210 and does not overlap more than half of the fourth photodiode 220. In some embodiments, the second internal reflector 250 overlaps the third photodiode 210 and a portion of the fourth photodiode 220.

[0054] In some embodiments, the second internal reflector 250 has an angle θ between the inclined light receiving surface 252 and the third photodiode 210 (e.g., the bottom surface 251 of the second internal reflector 250). 2 and has an angle θ 2 teeth,

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[0055] 7, which is a cross-sectional view taken along line CC in FIG. 1, showing a cross-section of a third unit according to some embodiments of the present disclosure. The third unit 300 has a seventh dimension W 7 a fifth photodiode 310 having an eighth dimension W 8 The fifth photodiode 310 is disposed adjacent to the sixth photodiode 320, and the sixth photodiode 320 has an eighth dimension W 8 is the seventh dimension W of the fifth photodiode 310 7 The third unit 300 further includes a third color filter 330 overlapping the fifth photodiode 310 and the sixth photodiode 320. The third color filter 330 can be an R / G / B color filter or a C / Y / M color filter. In some embodiments, the color of the third color filter 330 can be the same or different from the color of the first color filter 130 and / or the second color filter 230. There is no internal reflector in the third color filter 330.

[0056] The third unit 300 further includes a third grid 340 surrounding the third color filter 330. More specifically, the third color filter 330 has a first portion 332 directly above the fifth photodiode 310 and a second portion 334 directly above the sixth photodiode 320, and the first portion 332 and the second portion 334 transmit the same wavelength band. The first portion 332 of the third color filter 330 is spaced apart from the second portion 334 of the third color filter 330 by a portion of the third grid 340. That is, the third grid 340 surrounds the first portion 332 and the second portion 334 of the third color filter 330 and has a portion interposed therebetween. The third unit 300 further includes a fifth lens 360 on the fifth photodiode 310 and a sixth lens 370 on the sixth photodiode 320.

[0057] 8 and 9, these figures are normalized sensitivity peaks of large and small photodiodes of units of an image sensor according to some embodiments of the present disclosure. The sensitivity peaks of large photodiodes of units without an internal reflector (w / o ITR), such as the sixth photodiode of the third unit, are determined as 1. The sensitivity peaks of large photodiodes of units with a transparent internal reflector (ITR1), such as the second photodiode of the first unit, are greater than 1. The sensitivity peaks of large photodiodes of units with an internal reflector (ITR2) with an extinction coefficient, such as the fourth photodiode of the second unit, are also greater than 1.

[0058] The peak sensitivity of a small photodiode of a unit without an internal reflector (w / o ITR), such as the fifth photodiode of the third unit, is determined as 1. The peak sensitivity of a small photodiode of a unit with a transparent internal reflector (ITR 1), such as the first photodiode of the first unit, is less than 1. The peak sensitivity of a small photodiode of a unit with an internal reflector (ITR2) with an extinction coefficient, such as the third photodiode of the second unit, is also less than 1.

[0059] According to the results of Figures 8 and 9, by adding an internal reflector in the unit, the incident light to the large photodiode is increased and the incident light to the small photodiode is decreased. The mixed use of the first, second and third units can generate more sensitivity combinations of the image sensor, so that the purpose of multi-sensitivity ratio for high dynamic range (HDR) can be achieved.

[0060] Although the present invention has been described in considerable detail with reference to specific embodiments thereof, other embodiments are possible, and therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.

[0061] It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they come within the scope of the following claims and their equivalents.

Claims

1. An image sensor comprising a first unit, The first unit is a first photodiode having a first dimension; a second photodiode disposed adjacent to the first photodiode and having a second dimension greater than the first dimension; a first color filter overlapping the first photodiode and the second photodiode and covering an entire top surface of the first photodiode and an entire top surface of the second photodiode; a first internal reflector disposed on the first color filter and overlapping the first photodiode, the first internal reflector having an inclined light receiving surface that is inclined from an upper surface of the first color filter toward the second photodiode, the first internal reflector having a refractive index smaller than a refractive index of the first color filter; The image sensor comprises:

2. a difference between the refractive index of the first internal reflector and the refractive index of the first color filter is greater than 0.2; 2. The image sensor of claim 1.

3. the first unit comprises a grid surrounding the first color filter, a ratio of a height of the first internal reflector to a height of the grid being between 0.3 and 1, the first internal reflector having a fifth dimension, the fifth dimension being greater than the first dimension of the first photodiode and less than a sum of the first dimension of the first photodiode and half the second dimension of the second photodiode; 2. The image sensor of claim 1.

4. The first unit includes a grid that surrounds the first color filter, and the first internal reflector has an angle θ between the inclined light receiving surface and the first photodiode. １ having 2. The image sensor of claim 1.

5. The angle θ １ teeth, [0010] Fulfilling H １ is the height of the grid, W １ is the first dimension of the first photodiode, W ２ is the second dimension of the second photodiode, 5. The image sensor according to claim 4.

6. the first internal reflector overlaps a portion of the second photodiode, the first internal reflector is made of a transparent organic material, and the first internal reflector is a triangular prism.

2. The image sensor of claim 1.

7. 10. The image sensor of claim 1, further comprising a second unit, The second unit, a third photodiode having a third dimension; and a fourth photodiode disposed adjacent to the third photodiode and having a fourth dimension greater than the third dimension; a second color filter overlying the third photodiode and the fourth photodiode; a second internal reflector disposed on the second color filter and overlapping the third photodiode, the second internal reflector having an inclined light-receiving surface that is inclined from an upper surface of the second color filter toward the fourth photodiode, a refractive index of the second internal reflector being smaller than a refractive index of the second color filter, and a transparency of the second internal reflector being different from a transparency of the first internal reflector; The image sensor comprises:

8. a difference between a refractive index of the second internal reflector and a refractive index of the second color filter is greater than 0.2, the second unit includes a grid surrounding the second color filter, and a ratio of a height of the second internal reflector to a height of the grid is 0.3 to 1; 8. The image sensor according to claim 7.

9. the second internal reflector has a sixth dimension, the sixth dimension being greater than the third dimension of the third photodiode and less than the sum of the third dimension of the third photodiode and half the fourth dimension of the fourth photodiode; 8. The image sensor according to claim 7.

10. The second unit includes a grid surrounding the second color filter, and the second internal reflector is disposed at an angle θ between the inclined light receiving surface and the third photodiode. ２ and the angle θ ２ teeth, [0025] Fulfilling H １ is the height of the grid, W ３ is the third dimension of the third photodiode, W ４ is the fourth dimension of the fourth photodiode, 8. The image sensor according to claim 7.

11. the second color filter extends continuously from the third photodiode to the fourth photodiode, the second internal reflector has an extinction coefficient of 0.1 to 0.3, the second internal reflector is a triangular prism, and the second internal reflector overlaps with a portion of the fourth photodiode; 8. The image sensor according to claim 7.

Images