Semiconductor device and its manufacturing method

Abstract

[Problem] To provide a semiconductor device including a thin-film transistor that can be more easily produced in comparison to conventional methods. [Solution] Prior to forming an organic semiconductor film upon an insulation film that is lyophobic with respect to a solvent, which is a main component of a solution including a material constituting an organic semiconductor film as a solute, a conductive film that is lyophilic with respect to the solvent is formed in a desired shape. It is thus possible to form the organic semiconductor film at a desired position, such as a channel formation region of the thin-film transistor. In a semiconductor device according to one mode of the present invention, for example, conductive films that are in a lower layer of an organic semiconductor film and above an insulation film functioning as a gate insulation film, and that respectively function as a source and a drain have desired shapes.

Description

[Technical field]

[0001] One aspect of the present invention relates to a semiconductor device including a thin film transistor, and a method for manufacturing the semiconductor device using a coating process. [Background technology]

[0002] An organic semiconductor film can be formed by dissolving an organic semiconductor compound in a solvent and applying the resulting solution. A vacuum process is required when forming an inorganic semiconductor film made of silicon or the like, whereas an organic semiconductor film can be formed without using such a vacuum process. Therefore, the manufacturing cost is relatively low. In addition, since there is no need to reduce the pressure inside the chamber in which the film is formed, it is relatively easy to form the organic semiconductor film in a large chamber. In this case, it is possible to manufacture a large area and a large amount of semiconductor elements including an organic semiconductor film. In addition, the organic semiconductor film is formed without using a high-temperature heating process required when forming an inorganic semiconductor film. Therefore, the substrate on which the organic semiconductor film is formed is not limited to a heat-resistant substrate, and may be a flexible substrate made of a relatively inexpensive plastic material. As a result, it is now possible to manufacture flexible devices, which were difficult when using a semiconductor element including an inorganic semiconductor film. Under such circumstances, research and development of semiconductor elements including an organic semiconductor film and devices including the same are being actively carried out.

[0003] An example of a semiconductor element containing an organic semiconductor film is a thin-film transistor in which a channel is formed in the organic semiconductor film. To put such transistors into practical use, it is important to establish their manufacturing process (e.g., a technique for selectively applying an organic semiconductor layer only to the portion that functions as the channel) and characteristics (e.g., high carrier mobility, no hysteresis occurring when switching from on to off or vice versa (hysteresis-free), and a rapid change in drain current near the threshold voltage).

[0004] In a thin film transistor, a gate electrode film and a semiconductor film are arranged to overlap with each other with a gate insulating film interposed therebetween. In general, a structure (bottom gate structure) in which a semiconductor film is arranged on a gate electrode film with a gate insulating film interposed therebetween is often adopted. Then, depending on the voltage applied to the gate electrode film, whether or not a carrier channel is formed in the region of the semiconductor film near the gate insulating film is determined. Here, carrier conduction in an organic semiconductor film included in a thin film transistor is strongly influenced by the physical and chemical properties of the gate insulating film at the interface with the organic semiconductor film.

[0005] For example, Patent Document 1 discloses that when SiO2 is used as a gate insulating film, hydroxyl groups, oxygen, and water present on the surface become trap sites for carrier conduction. As a means for improving the surface of such a gate insulating film, for example, Non-Patent Document 1 discloses that a treatment for forming a self-assembled monolayer (SAM treatment) on the interface of the gate insulating film is effective. In addition, Non-Patent Document 2 discloses that an organic thin-film transistor using a highly water-repellent fluororesin (Cytop (registered trademark)) as the gate insulating film and a rubrene single crystal as the organic semiconductor film exhibits hysteresis-free and extremely steep switching characteristics. However, the surface of such a gate insulating film has extremely high liquid repellency against the organic semiconductor film. Therefore, patterning of the organic semiconductor film on such a gate insulating film is performed through a complicated process described later.

[0006] Known techniques for patterning an organic semiconductor film include, for example, a method using a photophilic / phobic pattern and a method using a bank.

[0007] As a method of using the affinity-repellency pattern, a method of patterning by various means after subjecting the gate insulating film interface to SAM treatment is known. For example, Patent Document 1 and Non-Patent Document 3 disclose that the entire surface of the gate insulating film is subjected to SAM treatment, and the other portions than the portion that will become the channel formation region are made lyophilic by exposure treatment. This suppresses the repulsion of a solution containing the material constituting the applied organic semiconductor film as a solute at the portion subjected to the exposure treatment. Furthermore, it is possible to leave the organic semiconductor film without being repelled even in the portion surrounded by the portion subjected to the exposure treatment. On the other hand, Non-Patent Document 4 discloses that only the portion that will become the channel formation region after the SAM treatment of the entire surface of the gate insulating film is made lyophilic by exposure treatment. This makes it possible to apply a solution containing the material constituting the organic semiconductor film as a solute only to the portion subjected to the exposure treatment. Furthermore, Patent Document 2 discloses a method of forming an affinity-repellency pattern using a change in density of a self-assembled monolayer, and applying a solution containing the material constituting the organic semiconductor film as a solute only to the lyophilic portion.

[0008] Also, as a method using a bank, a method is known in which a bank is formed by a photolithography process, and the bank inhibits the flow of a solution containing a material constituting the organic semiconductor film as a solute, thereby forming an organic semiconductor film at a desired position. For example, Non-Patent Document 5 discloses the use of a fluororesin as the bank in the process. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] JP 2009-60032 A [Patent Document 2] JP 2008-192724 A

[0010] [Non-Patent Document 1] J.Mater.Chem.20,2549-2561(2010) [Non-Patent Document 2] Phys.Rev.Appl.1,034006(2014) [Non-Patent Document 3] ACS App.Mater.Interfaces 9,6237-6245(2017) [Non-Patent Document 4] Nature. 475, 364-367 (2011). [Non-Patent Document 5] Nat. Commun. 5, 4147 (2014). Summary of the Invention [Problem to be solved by the invention]

[0011] An object of one embodiment of the present invention is to provide a semiconductor device including a thin film transistor that can be manufactured more easily than by a conventional method. [Means for solving the problem]

[0012] The present inventors have found that, prior to the formation of an organic semiconductor film on an insulating film that is lyophobic to a solvent that is a main component of a solution containing a material that constitutes the organic semiconductor film as a solute, the organic semiconductor film can be formed at a desired position, for example, in a channel formation region of a transistor, by forming a conductive film that is lyophilic to the solvent in a desired shape.

[0013] That is, the semiconductor device of one embodiment of the present invention is characterized in that a conductive film functioning as a source and a drain has a desired shape on an insulating film functioning as a gate insulating film and in a layer below an organic semiconductor film, or a conductive film having a desired shape is provided separately from the conductive film functioning as a source and a drain. Also, a manufacturing method of a semiconductor device of one embodiment of the present invention is characterized in that a conductive film functioning as a source and a drain is formed in a desired shape on an insulating film functioning as a gate insulating film and in a layer below an organic semiconductor film, or a conductive film having a desired shape is formed separately from the conductive film functioning as a source and a drain.

[0014] For example, a semiconductor device including a first conductive film, an insulating film on the first conductive film, a second conductive film and a third conductive film on the insulating film, and an organic semiconductor film on the insulating film, the second conductive film, and the third conductive film, wherein the second conductive film includes a portion extending along a first direction, and the third conductive film includes a first portion located in the first direction as viewed from the second conductive film, a second portion located in a second direction perpendicular to the first direction as viewed from a region between the second conductive film and the first portion, and a third portion located in a third direction that is the opposite direction to the second direction, a fourth portion located in a fourth direction that is the opposite direction to the first direction as viewed from the second portion, and a fifth portion located in the fourth direction as viewed from the third portion, wherein at least a portion of the first portion and the second portion and at least a portion of the third portion extend continuously, and a surface free energy of the insulating film is smaller than a surface free energy of the second conductive film and a surface free energy of the third conductive film, is one aspect of the present invention.

[0015] The method also includes the steps of forming a first conductive film, forming an insulating film on the first conductive film, irradiating a first region and a second region of the insulating film with ultraviolet light, forming a second conductive film and a third conductive film in the first region and the second region, respectively, and forming an organic semiconductor film on the insulating film, the second conductive film, and the third conductive film, wherein the first region extends along a first direction, and the second region has a first portion located in the first direction as viewed from the first region, a second portion located in a second direction perpendicular to the first direction as viewed from a region between the first region and the first portion, and a third portion located in a third direction opposite to the second direction. Another aspect of the present invention is a method for manufacturing a semiconductor device, the method including: a first portion; a fourth portion located in a fourth direction that is opposite to the first direction as viewed from the second portion; and a fifth portion located in the fourth direction as viewed from the third portion, wherein at least a part of the first portion and the second portion and at least a part of the third portion extend continuously; a contact angle of a solvent that is a main component of a solution containing a material that constitutes the organic semiconductor film as a solute, with the gate insulating film is larger than a contact angle of the solvent with each of the second conductive film and the third conductive film, and the step of forming the organic semiconductor film includes a step of applying the solution along the fourth direction. Effect of the Invention

[0016] According to one embodiment of the present invention, it is possible to provide a thin film transistor having an organic semiconductor film without going through complicated steps such as a conventional method using a photophile pattern or a conventional method using a bank. [Brief description of the drawings]

[0017] [Figure 1A] FIG. 1 is a top view illustrating an example of a semiconductor device of one embodiment of the present invention. [Figure 1B] 1B is a cross-sectional view taken along line A-A' in FIG. 1A. [Diagram 2] 1B is a top view showing a state in which an organic semiconductor film 7 has been removed from the semiconductor device shown in FIG. 1A. FIG. [Figure 3A] FIG. 1 is a top view illustrating an example of a semiconductor device of one embodiment of the present invention. [Figure 3B] FIG. 3B is a cross-sectional view taken along line BB' shown in FIG. 3A. [Figure 4]FIG. 3B is a top view showing a state in which the organic semiconductor film 25 has been removed from the semiconductor device shown in FIG. 3A. [Figure 5A] 1A to 1C are cross-sectional views illustrating an example of a manufacturing method of a semiconductor device of one embodiment of the present invention. [Figure 5B] 1A to 1C are cross-sectional views illustrating an example of a manufacturing method of a semiconductor device of one embodiment of the present invention. [Figure 5C] 1A to 1C are cross-sectional views illustrating an example of a manufacturing method of a semiconductor device of one embodiment of the present invention. [Figure 5D] 1A to 1C are cross-sectional views illustrating an example of a manufacturing method of a semiconductor device of one embodiment of the present invention. [Figure 6] 4 is a side view showing an example of a method for applying a solution containing a material constituting a gate electrode film 15 as a solute. FIG. [Figure 7A] 11 is a top view showing an example of a method for applying a solution containing a material constituting an organic semiconductor film 25 as a solute. FIG. [Figure 7B] 7B is a cross-sectional view taken along the line CC' shown in FIG. 7A. [Figure 8A] 11 is a top view showing an example of a method for applying a solution containing a material constituting an organic semiconductor film 25 as a solute. FIG. [Figure 8B] 8B is a cross-sectional view taken along the line CC' shown in FIG. 8A. [Figure 9A] 11 is a top view showing an example of a method for applying a solution containing a material constituting an organic semiconductor film 25 as a solute. FIG. [Figure 9B] 9B is a cross-sectional view taken along the line CC' shown in FIG. 9A. [Figure 10A] 11 is a top view showing an example of a method for applying a solution containing a material constituting an organic semiconductor film 25 as a solute. FIG. [Figure 10B] 10B is a cross-sectional view taken along the line CC' shown in FIG. 10A. [Figure 11A] 11 is a top view showing an example of a method for applying a solution containing a material constituting an organic semiconductor film 25 as a solute. FIG. [Figure 11B] 10B is a cross-sectional view taken along the line CC' shown in FIG. 10A. [Figure 12] 13 is a cross-sectional view showing a modified example of the semiconductor device. [Figure 13] 13A and 13B are top views showing modified examples of a conductive film on which an organic semiconductor film is first formed in a semiconductor device. [Figure 14] 13A and 13B are top views showing modified examples of a conductive film on which an organic semiconductor film is first formed in a semiconductor device. [Figure 15] FIG. 2 is a top view showing a conductive example in which an organic semiconductor film is formed first in a semiconductor device. [Figure 16] 3 is a polarizing microscope photograph of the semiconductor device obtained in Example 1. [Figure 17] FIG. 4 is a graph showing the output characteristics of an organic thin-film transistor element included in the semiconductor device obtained in Example 1. [Figure 18] FIG. 2 is a graph showing the transfer characteristics of an organic thin-film transistor element included in the semiconductor device obtained in Example 1. [Figure 19] 11 is a polarizing microscope photograph of the semiconductor device obtained in Example 3. [Figure 20] FIG. 13 is a graph showing the output characteristics of an organic thin-film transistor element included in the semiconductor device obtained in Example 3. [Figure 21] FIG. 13 is a graph showing the transfer characteristics of an organic thin-film transistor element included in the semiconductor device obtained in Example 3. [Figure 22] 11 is a polarizing microscope photograph of the semiconductor device obtained in Example 6. [Diagram 23] 13 is a polarizing microscope photograph of the semiconductor device obtained in Example 8. [Figure 24] 1 is a polarizing microscope photograph showing a semiconductor film obtained in Example 10. [Diagram 25] 13 is a polarizing microscope photograph of the semiconductor device obtained in Example 11. [Figure 26] 13 is a polarizing microscope photograph of the semiconductor device obtained in Example 13. [Figure 27] 13 is a polarizing microscope photograph of the semiconductor device obtained in Example 15. [Figure 28] 13 is a polarizing microscope photograph of the semiconductor device obtained in Example 16. [Figure 29] 13 is a polarizing microscope photograph of the semiconductor device obtained in Example 17. [Diagram 30] 4 is a polarizing microscope photograph of the semiconductor device obtained in Comparative Example 1. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] 1. An example of a semiconductor device (1) Structure A. An example of a case where a conductive film functioning as a source and a drain has a desired shape 1A and 1B are diagrams illustrating an example of a semiconductor device according to one embodiment of the present invention. Specifically, Fig. 1A is a top view of the semiconductor device, and Fig. 1B is a cross-sectional view taken along line A-A' in Fig. 1A. Fig. 2 is a top view illustrating a state in which an organic semiconductor film 7 has been removed from the semiconductor device illustrated in Fig. 1A.

[0019] 1A and 1B includes a base 1, an undercoat film 2 on the base 1, a conductive film 3 on the undercoat film 2, an insulating film 4 on the conductive film 3, a conductive film 5 and a conductive film 6 on the insulating film 4, and an organic semiconductor film 7 on the insulating film 4, the conductive film 5, and the conductive film 6. The semiconductor device functions as a transistor. Specifically, the conductive film 3 functions as a gate, the conductive film 5 functions as one of the source and drain, and the conductive film 6 functions as the other of the source and drain.

[0020] The conductive films 5 and 6 are disposed on the insulating film 4 and separated from each other in a layer below the organic semiconductor film 7. The conductive film 5 includes a portion extending from left to right on the paper plane of FIGS. 1A and 2. The conductive film 6 extends so as to surround the right end of the conductive film 5 on the paper plane of FIGS. 1A and 2. In other words, the conductive film 5 extends along a first direction, and the conductive film 6 includes a first portion 6-1 located in the first direction as viewed from the conductive film 5, a second portion 6-2 located in a second direction perpendicular to the first direction as viewed from a region 8-1 between the conductive film 5 and the first portion 6-1, a third portion 6-3 located in a third direction opposite to the second direction, a fourth portion 6-4 located in a fourth direction opposite to the first direction as viewed from the second portion 6-2, and a fifth portion 6-5 located in the fourth direction as viewed from the third portion 6-3.

[0021] The shape of the conductive film 6 shown in FIGS. 1A and 2 can also be expressed as a U-shape. Specifically, the conductive film 6 is composed of an upper part and a lower part extending in the direction in which the conductive film 5 extends, i.e., the first direction and the fourth direction described above, and an intermediate part extending in a direction perpendicular to the direction in which the conductive film 5 extends, i.e., the second direction and the third direction described above. Typically, the end of the upper part on the first direction side and the end of the intermediate part on the second direction side are continuous, and the end of the lower part on the first direction side and the end of the intermediate part on the third direction side are continuous. However, as long as there is no hindrance to the formation of the organic semiconductor film 6 described later, the end of the upper part on the first direction side and the end of the intermediate part on the second direction side do not necessarily have to be continuous, and there can be a certain amount of space between these ends. Similarly, as long as there is no hindrance to the formation of the organic semiconductor film described later, the end of the lower part on the first direction side and the end of the intermediate part on the third direction side do not necessarily have to be continuous, and there can be a certain amount of space between both ends. The intermediate portion includes a first portion 6-1 shown in Figures 1A and 2. The upper portion includes a second portion 6-2 and a fourth portion 6-4 shown in Figures 1A and 2. The lower portion includes a third portion 6-3 and a fifth portion 6-5 shown in Figures 1A and 2. The conductive film 6 is disposed such that at least a portion of the conductive film 5 is located between the upper portion and the lower portion.

[0022] An example of a case where a conductive film having a desired shape is provided in addition to the conductive film functioning as a source and a drain 3A and 3B are diagrams showing another example of a semiconductor device according to one embodiment of the present invention. Specifically, Fig. 3A is a top view of the semiconductor device, and Fig. 3B is a cross-sectional view taken along line B-B' in Fig. 3A. Fig. 4 is a top view showing a state in which an organic semiconductor film 25 has been removed from the semiconductor device shown in Fig. 3A.

[0023] 3A and 3B includes a base 11, an undercoat film 13 on the base 11, a conductive film 15 on the undercoat film 13, an insulating film 17 on the conductive film 15, conductive films 19, 21, and 23 on the insulating film 17, and an organic semiconductor film 25 on the insulating film 17 and the conductive films 19, 21, and 23. The semiconductor device functions as a transistor. Specifically, the conductive film 15 functions as a gate, the conductive film 19 functions as one of the source and drain, and the conductive film 21 functions as the other of the source and drain.

[0024] The conductive films 19, 21, and 23 are disposed on the insulating film 17 and separated from one another in a layer below the organic semiconductor film 25. The conductive films 19 and 21 include portions extending approximately in parallel from left to right on the paper surfaces of Figures 3A and 4. The conductive film 23 extends so as to surround the right ends of the conductive films 19 and 21 on the paper surfaces of Figures 3A and 4. In other words, the conductive films 19 and 21 extend approximately parallel to the first direction, and the conductive film 23 includes a first portion 23-1 located in the first direction when viewed from the conductive films 19 and 21, a second portion 23-2 located in a second direction perpendicular to the first direction when viewed from a region 30-1 between the conductive films 19 and 21 and the first portion 23-1, a third portion 23-3 located in a third direction that is the opposite direction to the second direction, a fourth portion 23-4 located in a fourth direction that is the opposite direction to the first direction when viewed from the second portion 23-2, and a fifth portion 23-5 located in the fourth direction when viewed from the third portion 23-3.

[0025] The shape of the conductive film 23 shown in FIGS. 3A and 4 can also be expressed as being U-shaped, similar to the conductive film 6 shown in FIGS. 1A and 2.

[0026] C. Features of the structure of semiconductor devices 1A and 1B and 3A and 3B, an insulating film having liquid repellency to a solvent that is a main component of a solution containing the material constituting the organic semiconductor films 7 and 25 as a solute is used as the insulating films 4 and 17, and a conductive film having liquid affinity to the solvent is used as the conductive films 5, 6, 19, and 21 and the conductive film 23 that function as a source and a drain. That is, the surface free energy of the insulating films 4 and 17 is smaller than the surface free energy of the conductive films 5, 6, 19, 21, and 23. Therefore, the contact angle of the solvent with respect to the insulating films 4 and 17 is larger than the contact angle of the solvent with respect to the conductive films 5, 6, 19, 21, and 23, respectively.

[0027] The shapes of the conductive films 6 and 23 are not limited to those shown in Figures 1A, 2, 3A, and 4. However, in order to deposit the organic semiconductor film 7 or 25 on the insulating film 4 or 17 in the region between the conductive film 5 and the conductive film 6 (see Figures 1A and 2) or the region between the conductive film 19 and the conductive film 21 (see Figures 3A and 4), which will be the channel formation region of the thin film transistor, the conductive films 6 and 23 need to be deposited in the following shapes.

[0028] First, in the film forming process of the organic semiconductor film 7 or 25 described later, a solution containing a material constituting the organic semiconductor film 7 or 25 as a solute is applied from right to left on the paper surface of Figs. 1A, 2, 3A, and 4, that is, along the above-mentioned fourth direction. As described above, the insulating films 4 and 17 are liquid repellent to the solvent that is the main component of the solution, and the conductive films 6 and 23 are lyophilic to the solvent, so that application of the solution is started when the conductive films 6 and 23 come into contact with the solution. In this specification, the start of application means that the solution to be applied is separated and independent from the application member such as a blade or roller and begins to remain on the object to be applied. The application of the solution must be started before the solution comes into contact with the insulating film 4 or 17 in the region between the conductive film 5 and the conductive film 6 (see Figs. 1A and 2) or the region between the conductive film 19 and the conductive film 21 (see Figs. 3A and 4), which will be the channel formation region of the thin film transistor. Therefore, the conductive film 6 needs to be formed into a shape including a portion (e.g., first portion 6-1) existing in the first direction when viewed from the conductive film 5. Similarly, the conductive film 23 needs to be formed into a shape including a portion (e.g., first portion 23-1) existing in the first direction when viewed from the conductive films 19 and 21.

[0029] In addition, in the film formation process of the organic semiconductor films 7 and 25 described later, the material constituting the organic semiconductor films 7 and 25, which is contained as a solute in the solution, must be precipitated and remain in the region between the conductive film 5 and the conductive film 6 in the coating direction (region 8-1 shown in FIGS. 1A and 2) or the region between the conductive films 19 and 21 and the conductive film 23 in the coating direction (region 30-1 shown in FIGS. 3A and 4). In other words, in this manufacturing process, it is necessary to prevent the solution from being repelled in a direction perpendicular to the direction in which the solution is applied from the regions 6-1 and 30-1, that is, in the second and third directions. Therefore, the conductive film 6 must be formed into a shape that includes parts (for example, the second part 6-2 and the third part 6-3) that exist in the second and third directions as viewed from the region 8-1, and at least a part of the parts must be continuously extended from the part (for example, the first part 6-1) that exists in the first direction. Similarly, the conductive film 23 must be formed into a shape that includes portions existing in the second and third directions (e.g., second portion 23-2 and third portion 23-3) when viewed from region 30-1, and at least a portion of the portions extends continuously from a portion existing in the first direction (e.g., first portion 23-1).

[0030] Similarly, in the film-forming process of the organic semiconductor films 7 and 25 described later, the material constituting the organic semiconductor films 7 and 25 contained as a solute in the solution must remain to some extent in the region between the conductive film 5 and the conductive film 6 in the direction perpendicular to the coating direction (regions 8-2 and 8-3 shown in FIGS. 1A and 2), or in the region between the conductive film 19 and the conductive film 23 in the direction perpendicular to the coating direction (region 30-2 shown in FIGS. 3A and 4) and the region between the conductive film 21 and the conductive film 23 (region 30-3 shown in FIGS. 3A and 4). In other words, in the film-forming process, it is necessary to prevent the solution from being repelled from the regions 6-1, 6-2, 30-1, and the region 30-2 in the direction in which the solution is applied, that is, in the fourth direction. Therefore, the conductive film 6 must be formed in a shape that includes a portion (for example, the fourth portion 6-4 and the fifth portion 6-5) that overlaps with the conductive film 5 in the second and third directions. Similarly, the conductive film 23 needs to be formed in a shape that includes portions (for example, a fourth portion 23-4 and a fifth portion 23-5) that overlap with the conductive films 19 and 21 in the second and third directions.

[0031] Although not shown in Figures 1A, 1B, and 2, the conductive films 3, 5, and 6 are electrically connected to other circuit elements (transistors, signal lines, power lines, etc.). Similarly, although not shown in Figures 3A, 3B, and 4, the conductive films 15, 19, and 21 are electrically connected to other circuit elements. On the other hand, the conductive film 23 shown in Figures 3A, 3B, and 4 is not connected to other circuit elements, i.e., is electrically isolated.

[0032] (2) Materials A. Bases 1 and 11 As the substrates 1 and 11, a plastic substrate having low heat resistance such as polyethylene naphthalate (PEN), polyethylene terephthalate (PET) or polypropylene, a plastic substrate having high heat resistance such as polycarbonate, a silicon substrate, a glass substrate, or the like can be used. When a flexible substrate such as a plastic substrate is used as the substrates 1 and 11, it is preferable because the entire semiconductor device can be made flexible. Also, a pulp substrate impregnated with a fluororesin may be used as the substrates 1 and 11.

[0033] Base film 2 and 13 and insulating film 4 and 17 The base films 2 and 13 and the insulating films 4 and 17 may contain a fluorine-based resin. The base films 2 and 13 and the insulating films 4 and 17 may be made of a fluorine-based resin. The surfaces of the base films 2 and 13 and the insulating films 4 and 17 are preferably smooth and free of irregularities. In one embodiment of the present invention, the base films 2 and 13 and the insulating films 4 and 17 must generate photochemically reactive radicals when irradiated with ultraviolet light (details will be described later). For this reason, it is preferable to use a polymer insulating material such as a fluorine-based resin that generates reactive radicals as the base films 2 and 13 and the insulating films 4 and 17.

[0034] Examples of the fluorine-based resin include polychlorotrifluoroethylene, polyvinyl fluoride, ethylene-chlorotrifluoroethylene copolymer, polyvinylidene fluoride, perfluoroethylenepropene copolymer, ethylene-tetrafluoroethylene copolymer, polytetrafluoroethylene, and fluorine-based resins having a perfluoroalkoxyalkane or perfluoroalkyl ether ring structure.

[0035] Furthermore, it is more preferable to use a perfluororesin, particularly a fluorine-based resin having a perfluoroalkyl ether ring structure, for the base films 2 and 13 and the insulating films 4 and 17. This is because a transistor with excellent characteristics can be obtained. For example, perfluoro(3-butenyl vinyl ether) polymer (CYTOP (registered trademark) manufactured by AGC) or perfluorodimethyldioxole-tetrafluoroethylene copolymer (Teflon (registered trademark) AF) is particularly preferable as a material applied to the base films 2 and 13 and the insulating films 4 and 17.

[0036] Conductive films 3, 5, 6, 15, 19, 21 and 23 The conductive films 3, 5, 6, 15, 19, 21, and 23 may contain a metal or an alloy containing the metal, a conductive organic material, or an organic material in which metal nanoparticles are dispersed. The conductive films 3, 5, 6, 15, 19, 21, and 23 may be made of a metal or an alloy containing the metal, a conductive organic material, or an organic material in which metal nanoparticles are dispersed. Furthermore, the conductive films 5 and 6 shown in Figs. 1A, 1B, and 2 may be made of the same material. Furthermore, the conductive films 19, 21, and 23 shown in Figs. 3A, 3B, and 4 may be made of the same material. In this case, the conductive films 5 and 6 or the conductive films 19, 21, and 23 can be formed simultaneously, which is preferable.

[0037] Examples of metals or alloys containing the same contained in the conductive films 3, 5, 6, 15, 19, 21, and 23 include metals such as platinum, gold, silver, aluminum, chromium, tungsten, copper, iron, lead, titanium, indium, etc., and alloys containing these metals (such as InO2, ZnO2, and indium tin oxide (ITO)).

[0038] Examples of the conductive organic material contained in the conductive films 3, 5, 6, 15, 19, 21, and 23 include conductive polymer compounds such as polythiophene, polyacetylene, and polyparaphenylenevinylene, carbon nanotubes, and graphene.

[0039] Examples of the organic matter in which the metal nanoparticles contained in the conductive films 3, 5, 6, 15, 19, 21, and 23 are dispersed include tetrachloromethane, benzene, dichlorobenzene, dichloromethane, toluene, octane, tetralin, mesitylene, butanol, and methanol.

[0040] An example of the metal nanoparticles dispersed in the organic material is a metal nanoparticle containing gold, silver or copper as a main component and other metal elements. The metal nanoparticles are generally called nano-sized (less than 1 μm), and the average particle size is preferably 10 nm or more and 100 nm or less, more preferably 30 nm or less. In addition, when the metal nanoparticles contain gold or silver, the conductivity of the obtained electrode film is high, which is preferable.

[0041] The ratio of the metal nanoparticles is preferably 30% to 60% by weight based on the total mass of the material, which makes it easier to form the conductive films 3, 5, 6, 15, 19, 21, and 23 into a desired pattern when their thicknesses are within a suitable range (15 to 100 nm, particularly 30 to 90 nm).

[0042] The metal nanoparticles may also be coated with an organic molecular layer containing alkylamines, alkyldiamines, or amines of other structures. This coating is believed to be formed by a large number of alkylamine molecules being bonded to the metal nanoparticles by coordinate bonds of the amino groups, and the alkyl groups being aggregated on the surface of the metal nanoparticles. Therefore, the weight ratio of the coating can be adjusted by adjusting the molecular weight of the alkylamine that is mainly used.

[0043] An example of an organic molecular layer containing alkylamines, alkyldiamines, or amines of other structures that coats metal nanoparticles is as follows.

[0044] First, the medium- and short-chain alkylamine is not particularly limited in structure, but is preferably a primary amino group RNH2 (R is a hydrocarbon chain) or a secondary amino group R1R2NH (R1 and R2 are hydrocarbon chains and may be the same or different). In addition, the medium- and short-chain alkylamine should have a boiling point of 100°C or higher in consideration of the thermal decomposition temperature of the complex compound, and a boiling point of 250°C or lower in consideration of the low-temperature sintering property of the coated metal nanoparticles. Examples of the medium- and short-chain alkylamine include, but are not limited to, 2-ethoxyethylamine, dipropylamine, dibutylamine, hexylamine, cyclohexylamine, heptylamine, 3-butoxypropylamine, octylamine, nonylamine, decylamine, 3-aminopropyltriethoxysilane, and dodecylamine.

[0045] Examples of long-chain and medium-chain alkylamines include dipropylamine, dibutylamine, hexylamine, cyclohexylamine, heptylamine, 3-butoxypropylamine, octylamine, nonylamine, decylamine, 3-aminopropyltriethoxysilane, dodecylamine, hexadecylamine, oleylamine, octadecylamine, etc. Any long-chain and medium-chain alkylamine having 6 or more carbon atoms can be used appropriately depending on the purpose.

[0046] Examples of short-chain alkylamines include amylamine, 2-ethoxyethylamine, 4-methoxybutylamine, diisopropylamine, butylamine, diethylamine, and propanediol. propylamine, isopropylamine, ethylamine, dimethylamine and the like.

[0047] In addition, the medium- and short-chain alkyldiamine is not particularly limited in structure, but it is desirable that at least one amino group is a primary amino group RNH2 (R is a hydrocarbon chain) or a secondary amino group R1R2NH (R1 and R2 are hydrocarbon chains and may be the same or different). Considering the thermal decomposition temperature of the complex compound, the medium- and short-chain alkyldiamine should have a boiling point of 100°C or higher, and considering the low-temperature sintering property of the coated metal nanoparticles, the boiling point should be 250°C or lower. Examples of the diaminodiamine include, but are not limited to, ethylenediamine, N,N-dimethylethylenediamine, N,N'-dimethylethylenediamine, N,N-diethylethylenediamine, N,N'-diethylethylenediamine, 1,3-propanediamine, 2,2-dimethyl-1,3-propanediamine, N,N-dimethyl-1,3-diaminopropane, N,N'-dimethyl-1,3-diaminopropane, N,N-diethyl-1,3-diaminopropane, 1,4-diaminobutane, 1,5-diamino-2-methylpentane, 1,6-diaminohexane, N,N'-dimethyl-1,6-diaminohexane, 1,7-diaminoheptane, and 1,8-diaminooctane.

[0048] D. Organic semiconductor films 7 and 25 The organic semiconductor films 7 and 25 may contain one or both of a polymer organic semiconductor material and a low molecular weight organic semiconductor material. In this specification, a polymer refers to a molecule having a molecular weight of more than 10,000, and a low molecular weight refers to a molecule having a molecular weight of 10,000 or less. The organic semiconductor material constituting the organic semiconductor films 7 and 25 is preferably a low molecular weight organic semiconductor material. Furthermore, the molecular weight of the low molecular weight organic semiconductor material is preferably 1500 or less, and more preferably 800 or less. The molecular skeleton of the organic semiconductor material is not particularly limited as long as it has semiconductor properties.

[0049] The low molecular weight organic semiconductor material constituting the organic semiconductor films 7 and 25 is preferably a condensed polycyclic aromatic compound, more preferably a condensed polycyclic aromatic compound having an acene skeleton or a heteroacene skeleton, particularly preferably a condensed polycyclic aromatic compound having a thienoacene skeleton, and most preferably a compound represented by the following formula (2) or (3). In addition, since the organic semiconductor material is dissolved in an organic solvent when forming the organic semiconductor films 7 and 25, it is preferable that the organic semiconductor material is soluble in a solvent. For example, it is preferable that the organic semiconductor material has an alkyl group to ensure solubility. The thienoacene skeleton refers to a compound that contains at least one thiophene ring structure represented by the following formula (1) as a condensed ring site in the molecular structure.

[0050] [ka]

[0051] [ka]

[0052] [ka]

[0053] In formula (2), R1 represents an alkyl group. R2 represents an aromatic hydrocarbon group which may have an alkyl group or a heterocyclic group which may have an alkyl group. In formula (3), when R3 and R5 are hydrogen atoms, one of R4 and R6 represents an alkyl group, and the other represents an aromatic hydrocarbon group which may have an alkyl group or a heterocyclic group which may have an alkyl group. In formula (3), when any three of R3 to R6 are hydrogen atoms, the remaining one represents an alkyl group.

[0054] These alkyl groups are not limited to straight chain, branched chain, and cyclic. For example, examples of these alkyl groups include methyl, ethyl, propyl, isopropyl, n-butyl, n-pentyl, n-hexyl, n-octyl, n-decyl, n-dodecyl, and 2-ethylhexyl. These alkyl groups are preferably straight chain alkyl groups, more preferably straight chain alkyl groups having 4 to 14 carbon atoms, even more preferably straight chain alkyl groups having 6 to 12 carbon atoms, and most preferably straight chain alkyl groups having 8 to 12 carbon atoms.

[0055] The aromatic hydrocarbon group which may have an alkyl group means a functional group in which one of the hydrogen atoms on an aromatic hydrocarbon is substituted with an alkyl group, and specific examples thereof include a phenyl group, a naphthyl group, an anthryl group, etc. As the aromatic hydrocarbon group, a phenyl group or a naphthyl group is preferable, and a phenyl group is more preferable.

[0056] The heterocyclic group which may have an alkyl group represents a similar embodiment in which the aromatic hydrocarbon group is replaced with a heterocyclic group. Examples of the heterocyclic group include a pyridyl group, a pyrazyl group, a pyrimidyl group, an imidazolyl group, a thienyl group, and a benzothienyl group. A preferred heterocyclic group is a thienyl group or a benzothienyl group.

[0057] Examples of polymeric organic semiconductor materials constituting the organic semiconductor films 7 and 25 include polythiophene, polyphenylenevinylene, polyfluorene, polyacetylene, polypyrrole, and the like, as well as donor-acceptor type polymers obtained by copolymerizing a monomer having high electron density, such as benzodithiophene or thienothiophene, with a monomer having low electron density, such as benzothiadiazole, benzobisthiadiazole, or diketopyrrolopyrrole.

[0058] In order to improve the characteristics of the semiconductor device or to impart other characteristics, two or more materials may be mixed and used as the organic semiconductor material constituting the organic semiconductor films 7 and 25. The mixed organic semiconductor material may be either a polymer organic semiconductor material or a low molecular weight organic semiconductor material. In general, the higher the crystallinity of the semiconductor film, the better the characteristics of the thin film transistor. For example, Adv.Mater.2018.30.1707256 describes that an organic semiconductor film with high crystallinity can be obtained by mixing two types of low molecular weight organic semiconductor materials. Therefore, when the organic semiconductor films 7 and 25 are formed using an organic semiconductor material in which two or more materials are mixed, it is preferable that both of the two materials are low molecular weight organic semiconductor materials. Furthermore, it is more preferable that the two materials are low molecular weight organic semiconductors having the same molecular structure and different alkyl group lengths.

[0059] These materials may be dispersed in an organic solvent. That is, the organic semiconductor films 7 and 25 may be made of an organic material in which these materials are dispersed. Furthermore, the organic semiconductor films 7 and 25 may contain additives.

[0060] There are no particular limitations on the additives contained in the organic semiconductor films 7 and 25 as long as they do not impair the functions of the semiconductor device. For example, examples of the additives include insulating materials, surfactants or thickeners for rheology control, and dopants for carrier injection or for adjusting the amount of carriers.

[0061] The organic matter that serves as the solvent for these materials is not particularly limited as long as it can dissolve and disperse these materials, but in consideration of storage stability, it is preferable that the solvent is capable of dissolving the materials. Examples of the organic matter include halogen-based solvents such as chloroform, chlorobenzene, and dichlorobenzene, aromatic hydrocarbon-based solvents such as benzene, toluene, xylene, mesitylene, tetralin, and cyclohexylbenzene, ethers such as tetrahydrofuran, anisole, and phenetole, amides such as dimethylformamide and dimethylacetamide, ketones such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and cyclopentanone, esters such as methyl benzoate and ethyl benzoate, and hydrocarbons such as cyclohexane and decalin.

[0062] 2. An example of a semiconductor device manufacturing method 5A to 5D are diagrams showing an example of a method for manufacturing the semiconductor device shown in Figures 1A, 1B, and 2, and specifically, diagrams showing the order of film formation from the formation of an undercoat film 2 on a base 1 (Figure 5A) to the formation of conductive films 5 and 6 (Figure 5D). Note that although Figures 5A to 5D show an example of a method for manufacturing the semiconductor device shown in Figures 1A, 1B, and 2, it is also possible to manufacture the semiconductor device shown in Figures 3A, 3B, and 4 by a similar manufacturing method.

[0063] First, a solution containing the material constituting the undercoat film 2 as a solute is applied onto the substrate 1. The solution can be applied by spin coating, dip coating, spray coating, droplet ejection, die coating, or the like. When the undercoat film 2 is applied to the entire upper surface of the flat substrate 1, it is preferable to apply spin coating. The applied solution may be subjected to a heat treatment at a temperature of 200° C. or less, or may be naturally dried. This completes the formation of the undercoat film 2 on the substrate 1 (see FIG. 5A).

[0064] Next, ultraviolet rays are selectively irradiated onto the base film 2 in a region (first pattern region) where the conductive film 3 will be formed later. As a method for irradiating ultraviolet rays, a method of irradiating ultraviolet rays onto the entire surface of the base film 2 while covering the region other than the first pattern region with a photomask, a method of irradiating an ultraviolet laser onto only the first pattern region, or the like can be applied.

[0065] As a result, the surface of the undercoat film 2 in the first pattern region becomes a reactive surface by photochemical reaction. In this specification, the reactive surface refers to a surface in which radical groups are generated on the insulating film surface by photochemical reaction of an insulating film such as perfluororesin accompanied by ultraviolet irradiation, and the organic matter in which the metal nanoparticles are dispersed is in a state in which it is easy to adhere and aggregate. In addition, when the metal nanoparticles are covered with an organic molecular layer containing an alkylamine, an alkyldiamine, or an amine of another structure, the radical groups promote the detachment of the organic molecular layer, and the adhesion and aggregation (fusion and aggregation) of the metal nanoparticles to each other is promoted. In this specification, the adhesion and aggregation or fusion and aggregation refers to a state in which the metal nanoparticles aggregate while adhering (fusing) to the film-forming object.

[0066] The ultraviolet light irradiated to the undercoat film 2 is intended to dissociate the bond between carbon (C) and fluorine (F) in the undercoat film 2. The bond energy between carbon (C) and fluorine (F) is about 490 kJ / mol. Therefore, it is considered that if the wavelength of the ultraviolet light is 244 nm or less, the bond between carbon (C) and fluorine (F) can be dissociated. For example, the wavelength of the ultraviolet light may be 10 nm to 244 nm, preferably 10 nm to 200 nm, and more preferably 100 nm to 200 nm.

[0067] Next, a solution containing the material constituting the conductive film 3 as a solute is applied onto the base film 2. A method using an application member such as a blade and a roller can be applied as a method of applying the solution. For example, a method of applying the solution to the first pattern region of the base film 2 by sweeping a blade or rotating a roller adjacent to the base film 2 can be applied. For example, as shown in FIG. 6, the solution 150 is applied onto the base film 2, and the blade 200 adjacent to the base film 2 is swept from right to left on the paper surface to apply the solution 150 to the first pattern region of the base film 13. The direction in which the blade 200 is swept may be any direction.

[0068] As a result, a solution containing, as a solute, a material constituting the conductive film 3 is applied only to the first pattern region. The applied solution may then be subjected to a heat treatment at a temperature of 200° C. or less, or may be naturally dried. This completes the formation of the conductive film 3 (see FIG. 5B). Note that with regard to the formation of the conductive film 3 on the base film 2, the disclosure of JP 2014-195794 A may be referred to.

[0069] Next, a solution containing as a solute the material constituting the insulating film 4 is applied onto the base film 2 and the conductive film 3. The same method as the method for applying the solution containing as a solute the material constituting the base film 2 can be used as the method for applying the solution, and the above description is incorporated herein. The applied solution may then be subjected to a heat treatment at a temperature of 200° C. or less, or may be naturally dried. This completes the formation of the insulating film 4 (see FIG. 5C).

[0070] Next, ultraviolet rays are selectively irradiated onto the insulating film 4 in the region (second pattern region) where the conductive films 5 and 6 will be formed later. As the method of irradiating ultraviolet rays, a method similar to the method of irradiating ultraviolet rays onto the base film 2 can be adopted, and therefore the above description is applicable.

[0071] Next, a solution containing, as a solute, the materials constituting the conductive films 5 and 6 is applied onto the insulating film 4. As a method for applying the solution, a method similar to the method for applying the solution containing, as a solute, the materials constituting the conductive film 3 can be adopted, and therefore the above description is incorporated herein.

[0072] As a result, the solution containing the material constituting the conductive films 5 and 6 as a solute is applied only to the second pattern region. The applied solution may be subjected to a heat treatment at a temperature of 200° C. or less, or may be naturally dried. Furthermore, the conductive films 5 and 6 may be subjected to a surface treatment. One example of the surface treatment is a surface treatment using benzenethiol in which at least one hydrogen atom is substituted with a fluorine atom. This reduces the change in work function between the organic semiconductor film 7 to be formed later and the conductive films 5 and 6 functioning as the source and drain, improving carrier injection efficiency, and also improves the lyophilicity of the surfaces of the conductive films 5 and 6 with respect to the solvent that is the main component of the solution containing the material constituting the organic semiconductor film 7 as a solute. As a result, the formation of the conductive films 5 and 6 is completed (see FIG. 5D). For the formation of the conductive films 5 and 6 on the insulating film 4, the disclosure of JP 2014-195794 A may be referred to.

[0073] Next, a solution containing, as a solute, the material constituting the organic semiconductor film 7 is applied onto the conductive films 5 and 6 and the insulating film 4. As a method for applying the solution, a method similar to the method for applying the solution containing, as a solute, the material constituting the conductive films 3, 5, and 6 can be used. However, the solution containing, as a solute, the material constituting the organic semiconductor film 7 is applied along a specific direction.

[0074] An example of a method for applying a solution containing, as a solute, a material constituting the organic semiconductor film 7 will be described in detail with reference to Figures 7A, 7B to 11A, and 11B. Figures 7A to 11A are top views showing the changes that occur when the solution is applied, and Figures 7B to 11B are cross-sectional views taken along the line CC' shown in Figures 7A to 11A.

[0075] First, a solution 250 containing a material constituting the organic semiconductor film 7 as a solute is dropped onto the insulating film 4 located on the opposite side of the conductive film 6 from the side where the conductive film 5 is located. Then, as shown in FIGS. 7A and 7B, the blade 300 is placed in a position where it is brought into contact with the solution 250 and is not in contact with the insulating film 4, etc. It is preferable that the blade 300 has liquid repellency against the solution 250. For example, it is preferable that the surface of the blade 300 is liquid repellent so as to have liquid repellency against the solution 250. An example of the liquid repellency treatment for the blade 300 is a treatment using perfluoro(3-butenyl vinyl ether) polymer (CYTOP (registered trademark) manufactured by AGC) or perfluorodimethyldioxole-tetrafluoroethylene copolymer (Teflon (registered trademark) AF), which are suitable materials for the insulating film 4. Then, the blade 300 is swept in the direction of the arrow shown in FIG. 7A, that is, from right to left on the paper. In other words, the blade 300 is swept along the fourth direction.

[0076] When the solution 250 moves toward the conductive film 6 with the movement of the blade 300, the solution 250 is positioned on the conductive film 6 as shown in FIGS. 8A and 8B. Here, since the conductive film 6 has lyophilicity with respect to the solvent that is the main component of the solution 250, the rear end of the solution 250 (the end on the right side of the paper in FIGS. 8A and 8B) is stretched without following the movement of the blade 300. Furthermore, drying (volatilization of the solvent) is promoted at the rear end of the solution 250. As a result, the organic semiconductor material, which is the solute of the solution 250, precipitates, and the formation of the organic semiconductor film 7 on the conductive film 6 begins.

[0077] As shown in FIGS. 9A and 9B, when the blade 300 moves further onto the region between the conductive film 5 and the conductive film 6, the rear part of the solution 250 (the part on the right side of the paper in FIGS. 9A and 9B) is stretched by the organic semiconductor film 7 that has already been formed. In addition, since the conductive film 6 having lyophilicity is present behind and on the left and right of the rear part, the rear part is not separated from the organic semiconductor film 7 formed on the conductive film 6, and is also located on the insulating film 4 having lyophobicity. Then, drying (volatilization of the solvent) is promoted also in the rear part located on the insulating film 4. As a result, the organic semiconductor material, which is the solute of the solution 250, is precipitated, and the organic semiconductor film 7 is also formed on the conductive film 4. Note that, in the insulating film 4 on the opposite side to the side where the conductive film 5 is located as viewed from the conductive film 6, there is no structure for stretching a part of the solution 250, so that the drying of the solution 250 is not promoted and therefore the organic semiconductor film 7 is not formed.

[0078] 10A and 10B, when the blade 300 is further moved onto the region where the conductive film 6 is not present, the formation of the organic semiconductor film 7 on the insulating film 4 in the region between the conductive films 5 and 6 proceeds as described above. However, in the region where the lyophilic conductive film 6 is not present on the left and right of the rear part of the solution 250, the solution 250 is formed only on the lyophilic conductive film 5, and the solution 250 in the region not overlapping with the conductive film 5 moves following the movement of the blade 300.

[0079] 11A and 11B, when the blade 300 is further moved onto an area where the conductive film 5 is not present, the solution 250 is separated from the organic semiconductor film 7. In this manner, the formation of the organic semiconductor film 7 is completed (see FIGS. 1A and 1B).

[0080] 3. Example of changes The above-described semiconductor device and method for manufacturing the same are merely examples of the present invention, and semiconductor devices and methods for manufacturing the same that have features different from those of the above-described semiconductor device and method for manufacturing the same are also included in the present invention.

[0081] For example, the undercoat films 2 and 13 shown in Figures 1B and 3B are not essential components in the present invention. Therefore, a semiconductor device in which a substrate 1, a conductive film 3, and an insulating film 4 are in contact with each other as shown in Figure 12 is also an aspect of the present invention. The semiconductor device shown in Figure 1B and other figures is preferable in that the conductive film 3 can be patterned with high precision by a relatively simple method, since it is formed by the above-mentioned manufacturing method. On the other hand, the semiconductor device shown in Figure 12 is preferable in that the process of forming the undercoat film 2 can be eliminated.

[0082] Furthermore, in the semiconductor device of the present invention, the shape of the conductive film (conductive film 6 shown in FIGS. 1A and 1B and conductive film 23 shown in FIGS. 3A and 3B) on which the organic semiconductor film is first formed is not limited to a U-shape. For example, any of the shapes of conductive films 23' to 23''' shown in FIGS. 13 to 15 may be used as the shape of the conductive film. Although FIGS. 13 to 15 show modified versions of conductive film 23 shown in FIGS. 3A and 3B, the shape of conductive film 7 shown in FIGS. 1A and 1B may also be changed to the shape of conductive films 23' to 23''' shown in FIGS. 13 to 15.

[0083] For example, the conductive film on which the organic semiconductor film is first formed in the semiconductor device of the present invention may have at least a part of its upper surface shape curved, as in conductive film 23' shown in Fig. 13. Specifically, conductive film 23' is composed of upper and lower parts extending in the directions in which conductive films 19 and 21 extend, i.e., along the above-mentioned first and fourth directions, and an intermediate part extending in a curved manner from an end of the upper part on the first direction side to an end of the lower part on the first direction side.

[0084] 3A and 4, the conductive film 23' includes a first portion 23'-1 located in the first direction as viewed from the conductive films 19 and 21, a second portion 23'-2 located in the second direction and a third portion 23'-3 located in the third direction as viewed from the region between the conductive films 19 and 21 and the first portion 23'-1, a fourth portion 23'-4 located in the fourth direction as viewed from the second portion 23'-2, and a fifth portion 23'-5 located in the fourth direction as viewed from the third portion 23'-3.

[0085] The upper portion of the conductive film 23' includes part of the second portion 23'-2 and the fourth portion 23'-4. The lower portion of the conductive film 23' includes part of the third portion 23'-3 and the fifth portion 23'-5. The middle portion of the conductive film 23' includes the first portion 23'-1, the remainder of the second portion 23'-2, and the third portion 23'-3.

[0086] In the semiconductor device of the present invention, the conductive film on which the organic semiconductor film is first formed may include a plurality of separated sub-conductive films 23A to 23C as shown in FIG. 14. Specifically, the sub-conductive film 23A includes a portion 23''-1 located in the first direction as viewed from the conductive films 19 and 21. The sub-conductive film 23B includes a portion located in the second direction as viewed from the region between the conductive films 19 and 21 and the portion 23''-1, and a remaining portion located in the second direction as viewed from the conductive film 19. The sub-conductive film 23C includes a portion located in the third direction as viewed from the region between the conductive films 19 and 21 and the portion 23''-1, and a remaining portion located in the third direction as viewed from the conductive film 21. The sub-conductive film 23A includes a portion located in the second direction as viewed from the end of the sub-conductive film 23B on the first direction side, and a portion located in the third direction as viewed from the end of the sub-conductive film 23C on the first direction side.

[0087] 3A and 4, the sub-conductive films 23A to 23C shown in FIG. 14 include a first portion 23''-1 located in the first direction as viewed from the conductive films 19 and 21, a second portion 23''-2 located in the second direction and a third portion 23''-3 located in the third direction as viewed from the area between the conductive films 19 and 21 and the first portion 23''-1, a fourth portion 23''-4 located in the fourth direction as viewed from the second portion 23''-2, and a fifth portion 23''-5 located in the fourth direction as viewed from the third portion 23''-3.

[0088] 14 includes a part of the sub-conductive film 23A. Also, the second part 23''-2 in the sub-conductive films 23A to 23C shown in FIG. 14 includes a part of the sub-conductive film 23A and a part of the sub-conductive film 23B. Here, as shown in FIG. 14, the end of the sub-conductive film 23B can extend in the first direction at a position shifted in the third direction (downward in the figure) from the end of the upper side of the sub-conductive film 23A, and thus it is preferable that there is a region where a part of the sub-conductive film 23A and a part of the sub-conductive film 23B overlap in the first direction. Also, the third part 23''-3 in the sub-conductive films 23A to 23C shown in FIG. 14 includes a part of the sub-conductive film 23A and a part of the sub-conductive film 23C. Here, as shown in FIG. 14, an end of the sub-conductive film 23C can extend in the first direction at a position shifted in the second direction (upward in the figure) from the end of the lower side of the sub-conductive film 23A, and thus it is preferable that there is a region in which a part of the sub-conductive film 23A and a part of the sub-conductive film 23C overlap in the first direction. Moreover, a fourth portion 23''-4 in the sub-conductive films 23A to 23C shown in FIG. 14 includes a remnant of the sub-conductive film 23B. Moreover, a fifth portion 23''-5 in the sub-conductive films 23A to 23C shown in FIG. 14 includes a remnant of the sub-conductive film 23C.

[0089] 14 shows an example in which the conductive film on which the organic semiconductor film is initially formed is made up of three sub-conductive films 23A to 23C, but the number of sub-conductive films may be two or four or more. In this case, at least one of the first to fifth portions includes at least a portion of each of at least two sub-conductive films among the plurality of sub-conductive films.

[0090] In the semiconductor device of the present invention, the conductive film on which the organic semiconductor film is first formed may extend such that one end 23'''-6 and the other end 23'''-7 do not overlap with the conductive films 19 and 21 in the second and third directions, as in the conductive film 23''' shown in FIG. 15. The semiconductor device having the conductive film 23 shown in FIG. 4B and the like is preferable compared to the semiconductor device having the conductive film 23''' shown in FIG. 15 in that the parasitic capacitance generated in the conductive films 19 and 21 can be reduced. On the other hand, the semiconductor device having the conductive film 23''' shown in FIG. 15 is preferable compared to the semiconductor device having the conductive film 23 shown in FIG. 4 and the like in that the organic semiconductor film 25 can be reliably formed in the region between the conductive film 19 and the conductive film 21, which is to be the channel formation region of the transistor.

[0091] In the semiconductor device of the present invention, the base film 2 or 13 and the conductive film 3 or 15 may be formed using a known photolithography process. When the base film 2 or 13 and the conductive film 3 or 15 are formed by the above-mentioned film formation method, it is preferable that the conductive film 3 or 15 can be patterned with high precision by a relatively simple method. On the other hand, when a known photolithography process is used, it is preferable that the freedom of material selection increases, that is, it becomes possible to select a material suitable for each from a wider range of options.

[0092] In the semiconductor device of the present invention, the conductive films 5 and 6 or the conductive film 19, and the films 21 and 23 may be formed in the same process or in different processes. Forming them in the same process is preferable in that the film formation process of the semiconductor device can be reduced. On the other hand, forming them in different processes is preferable in that the freedom of material selection increases. EXAMPLES

[0093] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B. A semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIG. 3A and FIG. 3B was manufactured. First, a silicon wafer with a SiO2 thermal oxide film (100 nm) was prepared as a substrate, and CYTOP CTL809M (registered trademark) manufactured by AGC, which serves as an undercoat film, was applied to the substrate by spin coating to a thickness of about 25 nm. Next, gold (Au), which is the material of the conductive film, was deposited to a thickness of 25 nm through a shadow mask by vapor deposition. Next, the surface of the conductive film was exposed to pentafluorobenzenethiol vapor for 20 minutes. Next, the following known organic semiconductor materials No. 1 and No. 2 were dissolved in chlorobenzene so that the mass concentration was 0.05%, and then mixed at a volume ratio of No. 1:No. 2 = 9:1. Next, the obtained solution was blade-coated on the substrate using a glass blade at a speed of 3.5 μm / sec, and dried at room temperature to manufacture an organic semiconductor device in which a semiconductor film was formed only in the required area. The glass blade was coated with CYTOP CTL809M (registered trademark) manufactured by AGC Corp. The thickness of the obtained organic semiconductor film was about 5 nm.

[0094] [ka]

[0095] [ka]

[0096] A photograph of the semiconductor device obtained by crossed Nicol observation using a polarizing microscope is shown in Figure 16. The area where a crystalline organic semiconductor thin film was formed was determined from the color blinking observed by crossed Nicol observation. No color blinking indicating that an organic semiconductor film had been formed was observed on the CYTOP outside the area shown by the dotted line in the figure, confirming that no organic semiconductor film had been formed. On the other hand, in the area surrounded by the conductive film shown by the dotted line, it was confirmed that a highly crystalline organic semiconductor thin film with multiple crystal orientations had been formed without any defects. EXAMPLES

[0097] Evaluation of the organic semiconductor device described in Example 1 The organic thin-film transistor characteristics were measured for an organic thin-film transistor element composed of a source electrode and a drain electrode with a channel width of 800 μm and a channel length of 100 μm included in the semiconductor device manufactured in Example 1. In this organic thin-film transistor element, SiO2 as a thermal oxide film layer and CYTOP CTL809M (registered trademark) manufactured by AGC as an undercoat film act as insulating films, and the capacitance is 24 nF / cm 2 The element characteristic values ​​were calculated as follows. The output characteristics of the organic thin film transistor element included in the obtained semiconductor device are shown in FIG. 17. As shown in FIG. 17, the organic thin film transistor element showed linear and saturated output characteristics like a typical transistor element. In addition, as shown in FIG. 18, the thin film transistor was capable of being driven at a low voltage of 2 V or less, and the hysteresis was small. The subthreshold swing value, which indicates that the drain current changes rapidly near the threshold voltage, was calculated to be 67 mV / dec, indicating extremely steep switching characteristics approaching the theoretical limit. In addition, the carrier mobility of the organic thin film transistor element was calculated to be a maximum of 4.4 cm. 2 / Vs showed high mobility. EXAMPLES

[0098] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 1A and 1B. A semiconductor device was manufactured in the same manner as in Example 1, except that the shape of the shadow mask required for forming the conductive film functioning as the source and drain was changed. A polarizing microscope photograph of the obtained semiconductor device is shown in Figure 19. When the location where the organic semiconductor film was formed was confirmed in the same manner as in Example 1, a crystalline organic semiconductor thin film was obtained only in the area surrounded by the conductive film shown by the dotted line in the figure. EXAMPLES

[0099] Evaluation of the organic semiconductor device described in Example 3 The organic thin film transistor characteristics of an organic thin film transistor element comprised of a source electrode and a drain electrode having a channel width of 300 μm and a channel length of 50 μm included in the semiconductor device manufactured in Example 3 were measured. The insulating film and capacitance in this organic thin film transistor element are the same as those described in Example 2. The output characteristics of the organic thin film transistor element included in the obtained semiconductor device are shown in FIG. 20. As shown in FIG. 20, the organic thin film transistor element showed linear and saturated output characteristics like a typical transistor element. In addition, as shown in FIG. 21, the thin film transistor was capable of being driven at a low voltage of 2 V or less, and the hysteresis was small. The subthreshold swing value, which indicates that the drain current changes rapidly near the threshold voltage, was calculated to be 75 mV / dec, indicating extremely steep switching characteristics. In addition, the carrier mobility of the organic thin film transistor element was calculated to be a maximum of 1.0 cm 2 / Vs showed high mobility. EXAMPLES

[0100] Variation evaluation of the organic semiconductor device described in Example 1 The characteristic variation of the organic thin film transistor characteristics was evaluated for an organic thin film transistor element composed of a source electrode and a drain electrode with a channel width of 800 μm and a channel length of 100 μm included in the semiconductor device manufactured in Example 1. The mobility, the subthreshold swing (SS) value, and the value and the variation of the threshold voltage required to switch the transistor when the drain voltage Vd was set to -0.2 V and -2.0 V are shown in Table 1 below. [Table 1] TIFF0007638536000006.tif41160

[0101] All the measured elements showed high mobility and very steep switching characteristics at an extremely small threshold voltage, and the variation in these characteristics was small. From the above results, it was found that the elements obtained by the present invention can be fabricated with high mobility and steep switching characteristics at a low voltage and with an excellent yield. EXAMPLES

[0102] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B. A semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIG. 3A and FIG. 3B, which has a gate electrode, a source electrode, and a drain electrode formed by a printing process using silver nano-ink, was manufactured by the method described in the known literature (JP 2014195794, Nature Commun. 2016, 7, 11402-1-9). First, a glass substrate was prepared as a base, and CYTOP CTL809M (registered trademark) manufactured by AGC, which serves as a base film, was applied and formed on the base by a spin coating method. Next, after pattern irradiation with VUV light through a photomask, an ink containing silver nanoparticles described in the known literature (Nature Commun. 2016, 7, 11402-1-9) was used to form a film by the blade coating method described in the known literature, to prepare a gate electrode made of silver nanoparticles. Next, CYTOP CTL809M was applied and formed into a film by a spin coating method in the same manner as above, and then pentafluorobenzenethiol was treated in a gas phase in the same manner as described in Example 1, and a source electrode, a drain electrode, and a guide electrode made of silver nanoparticles were prepared in the same manner as above. The next semiconductor layer was formed by forming a film of the semiconductor material described in Example 1 in the same manner as described in Example 1, and an organic semiconductor device in which a semiconductor film was formed only in a necessary place was manufactured. In order to more clearly observe the film formation state of the semiconductor layer of the organic semiconductor device, a pattern of an organic semiconductor layer was formed in the same manner as above on a substrate on which a CYTOP layer and source and drain electrode layers made of silver nanoparticles were formed in the same manner as above on a silicon substrate with an oxide film, that is, a photograph of the semiconductor device obtained by cross-Nicol observation using a polarizing microscope of the organic semiconductor device in which the semiconductor layer was formed under the same conditions as the semiconductor device is shown in FIG. 22. When the area where a crystalline organic semiconductor thin film had been formed was determined from the color blinking observed by crossed Nicol observation, no color blinking indicating that an organic semiconductor film had been formed was observed on the CYTOP outside the area shown by the black dotted line in the figure, confirming that no organic semiconductor film had been formed. On the other hand, in the area surrounded by the conductive film shown by the dotted line, it was confirmed that a highly crystalline organic semiconductor thin film with multiple crystal orientations had been formed without any defects. EXAMPLES

[0103] Evaluation of the organic semiconductor device described in Example 6 The organic thin-film transistor characteristics of an organic thin-film transistor element, which is comprised of a source electrode and a drain electrode with a channel width of 800 μm and a channel length of 200 μm included in the semiconductor device produced in Example 6, were measured. In this organic thin-film transistor element, the capacitance of the CYTOP CTL809M layer, which acts as an insulating film, was calculated based on an experimentally obtained value and was 2.9 nF / cm 2 The element characteristic values ​​were calculated as follows. The organic thin-film transistor element exhibited the typical linear and saturated output-transfer characteristic shape of an organic field-effect transistor without hysteresis, similar to the transistor element described in Example 1. The carrier mobility of the organic thin-film transistor element was calculated from the obtained characteristics, and was found to be a maximum of 2.0 cm under low-voltage operation (drain voltage Vd = -0.5 V). 2 / Vs. In addition, the subthreshold swing (SS) value, which indicates the sudden change in drain current near the threshold voltage, was calculated to be 170 mV / dec, indicating extremely steep switching characteristics. EXAMPLES

[0104] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B. In the method described in Example 1, the gold electrode, which is the conductive film, was prepared using silver nanoparticles by the printing process described in Example 7, and the semiconductor solution used for preparing the semiconductor layer was changed to a solution prepared by dissolving the following known organic semiconductor materials, No. 3 and No. 4, in chlorobenzene to a mass concentration of 0.05%, and then mixing them in a volume ratio of No. 3:No. 4 = 9:1. A semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in Figures 3A and 3B was manufactured in the same manner as in the method described in Example 1, except that the gold electrode, which is the conductive film, was prepared using silver nanoparticles by the printing process described in Example 7, and the semiconductor solution used for preparing the semiconductor layer was changed to a solution prepared by dissolving the following known organic semiconductor materials, No. 3 and No. 4, in chlorobenzene to a mass concentration of 0.05%, and then mixing them in a volume ratio of No. 3:No. 4 = 9:1. [ka] [ka]

[0105] A photograph of the semiconductor device obtained by crossed Nicol observation using a polarizing microscope is shown in Figure 23. The area where a crystalline organic semiconductor thin film was formed was determined from the color blinking observed by crossed Nicol observation. No color blinking indicating that an organic semiconductor film had been formed was observed on the CYTOP outside the area shown by the black dotted line in the figure, confirming that no organic semiconductor film had been formed. On the other hand, in the area surrounded by the conductive film shown by the dotted line, it was confirmed that a highly crystalline organic semiconductor thin film with multiple crystal orientations had been formed without any defects. EXAMPLES

[0106] Evaluation of the organic semiconductor device described in Example 8 The organic thin-film transistor characteristics were measured for an organic thin-film transistor element composed of a source electrode and a drain electrode with a channel width of 800 μm and a channel length of 80 μm included in the semiconductor device manufactured in Example 8. In this organic thin-film transistor element, the thermal oxide layer SiO2 and the undercoat CYTOP CTL809M act as insulating films, and the capacitance of the element is 2.5 nF / cm 2 The element characteristic values ​​were calculated as follows. The organic thin-film transistor element exhibited the shape of the linear and saturated output-transfer characteristics typical of an organic field-effect transistor, without hysteresis, similar to the transistor element described in Example 1. A total of 15 elements were measured, and the carrier mobility of the organic thin-film transistor element was calculated from the obtained characteristics, and was found to be 0.29 cm on average at low voltage operation (drain voltage Vd = -5 V). 2 In addition, the subthreshold swing (SS) value, which indicates the sudden change in drain current near the threshold voltage, was calculated to be 230±40mV / dec, showing extremely steep switching characteristics with small variation. EXAMPLES

[0107] Manufacture of a semiconductor device having only the conductive film 23 shown in FIGS. 3A and 3B We verified whether a semiconductor thin film can be formed by film formation by the blade coating method on a substrate having a U-shaped electrode pattern included in a semiconductor device manufactured by the present invention. A base film of CYTOP CTL809M was applied to a silicon substrate with an oxide film by a spin coating method, and then a pattern of VUV light was irradiated through a photomask, after which an ink containing silver nanoparticles was formed by a blade coating method to produce a conductive film made of silver nanoparticles. A semiconductor thin film was formed on this substrate by the same method as that described in Example 8. The results are shown in FIG. 24. In the figure, a semiconductor thin film was formed only within the area indicated by the black dotted line, and it was confirmed that a semiconductor can be patterned by the arrangement of the conductive film according to the present invention. EXAMPLES

[0108] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B. A semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B was manufactured in the same manner as in Example 1, except that the semiconductor solution used for producing the semiconductor layer was changed to No. 5, which is a publicly known organic semiconductor material described below. [ka]

[0109] A photograph of the semiconductor device obtained by crossed Nicol observation using a polarizing microscope is shown in Figure 25. The area where a crystalline organic semiconductor thin film was formed was determined from the color blinking observed by crossed Nicol observation. No color blinking indicating that an organic semiconductor film had been formed was observed on the CYTOP outside the area shown by the black dotted line in the figure, confirming that no organic semiconductor film had been formed. On the other hand, in the area surrounded by the conductive film shown by the dotted line, it was confirmed that a highly crystalline organic semiconductor thin film with multiple crystal orientations had been formed without any defects. EXAMPLES

[0110] Evaluation of the organic semiconductor device described in Example 11 The organic thin-film transistor characteristics were measured for an organic thin-film transistor element composed of a source electrode and a drain electrode with a channel width of 800 μm and a channel length of 100 μm included in the semiconductor device manufactured in Example 11. In this organic thin-film transistor element, the SiO2 thermal oxide layer and the CYTOP CTL809M undercoat layer acted as insulating films, and the capacitance was 23 nF / cm 2 The element characteristic values ​​were calculated as follows. The organic thin-film transistor element showed a linear and saturated output-transfer characteristic shape typical of an organic field-effect transistor, without hysteresis, similar to the transistor element described in Example 1. The carrier mobility of the organic thin-film transistor element was calculated from the obtained characteristics, and found to be a maximum of 4.4 cm under low-voltage operation (drain voltage Vd = -0.5 V). 2 In addition, the subthreshold swing (SS) value, which indicates the sudden change in drain current near the threshold voltage, was calculated and found to be a minimum of 89 mV / dec, indicating extremely steep switching characteristics. EXAMPLES

[0111] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B. A semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B was manufactured in the same manner as in the method described in Example 1, except that the semiconductor solution used for producing a semiconductor layer was changed to a solution prepared by dissolving the organic semiconductor material No. 5 described in Example 11 and the known organic semiconductor material No. 6 described below in chlorobenzene to a mass concentration of 0.05%, and then mixing them in a volume ratio of No. 5:No. 6 = 8:2. [ka]

[0112] A photograph of the semiconductor device obtained by crossed Nicol observation using a polarizing microscope is shown in FIG. 26. The conductive film pattern in this example is the same as that shown in FIG. 16 used in Example 1, and the photograph shown in FIG. 25 is an enlarged view of the source electrode part and the drain electrode part that function as a semiconductor device. When the area where the crystalline organic semiconductor thin film was formed was determined from the color blinking by the crossed Nicol observation, no color blinking indicating that the organic semiconductor film was formed was observed on the CYTOP outside the area shown by the black dotted line in the figure, and it was confirmed that the organic semiconductor film was not formed. On the other hand, it was confirmed that a highly crystalline organic semiconductor thin film having multiple crystal orientations was formed without any defects in the area surrounded by the conductive film shown by the dotted line. EXAMPLES

[0113] Evaluation of the organic semiconductor device described in Example 13 The organic thin-film transistor characteristics were measured for an organic thin-film transistor element composed of a source electrode and a drain electrode with a channel width of 800 μm and a channel length of 200 μm included in the semiconductor device manufactured in Example 13. In this organic thin-film transistor element, the thermal oxide layer SiO2 and the undercoat CYTOP CTL809M act as insulating films, and the capacitance was 23 nF / cm 2 The element characteristic values ​​were calculated as follows. The organic thin-film transistor element showed a linear-saturated output-transfer characteristic shape typical of an organic field-effect transistor, without hysteresis, similar to the transistor element described in Example 1. The carrier mobility of the organic thin-film transistor element was calculated from the obtained characteristics, and was found to be a maximum of 0.79 cm under low-voltage operation (drain voltage Vd = -0.5 V). 2 In addition, the subthreshold swing (SS) value, which indicates the sudden change in drain current near the threshold voltage, was calculated to be 70 mV / dec, indicating extremely steep switching characteristics. EXAMPLES

[0114] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B. A semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIG. 3A and FIG. 3B was manufactured by the same method as that described in Example 1, except that the semiconductor solution used for preparing the semiconductor layer was replaced with a chlorobenzene solution of poly(3-hexyl)thiophene (manufactured by Merck), which is a commercially available organic semiconductor material, and the semiconductor solution was blade-coated at a speed of 5.0 μm / sec. A photograph of the semiconductor device obtained by observation using a microscope is shown in FIG. 27. When a thin film is formed on the substrate, poly(3-hexyl)thiophene is observed in orange, so that the formed portion can be easily observed. In the figure, it was confirmed that an organic semiconductor film was not formed on the CYTOP outside the area indicated by the black dotted line, while poly(3-hexyl)thiophene was formed without any defects in the area surrounded by the conductive film indicated by the dotted line. EXAMPLES

[0115] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B. In contrast to the method described in Example 1, a silicon wafer with a SiO2 thermal oxide film (100 nm) was not coated with CYTOP. Instead, the substrate surface was modified by exposing it to the vapor of 1H,1H,2H,2H-perfluorodecyltriethoxylane (FAS-17, Merck) at 120°C to perform liquid repellency treatment, and the semiconductor solution was blade-coated at a speed of 1.5 μm / sec. A semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIG. 3A and FIG. 3B was manufactured by the same method as that described in Example 1. A photograph of the semiconductor device obtained by crossed Nicol observation using a polarizing microscope is shown in FIG. 28. The area where a crystalline organic semiconductor thin film was formed was determined from the color blinking observed by the crossed Nicol observation, and it was confirmed that no organic semiconductor film was formed on the CYTOP outside the area shown by the dotted line in the figure, indicating that an organic semiconductor film had been formed. On the other hand, in the area surrounded by the conductive film indicated by the dotted lines, it was confirmed that a highly crystalline organic semiconductor thin film with multiple crystal orientations was deposited without any defects. EXAMPLES

[0116] Manufacture of a semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B. A semiconductor device including a conductive film having a shape corresponding to the conductive film 23 shown in FIG. 3A and FIG. 3B was manufactured by the same method as that described in Example 1, except that the solvent used for preparing the semiconductor solution was changed to o-xylene, the Au electrode was not exposed to PFBT vapor, and the semiconductor solution was blade-coated at a speed of 2.0 μm / sec. The semiconductor device was manufactured by the same method as that described in Example 1. A photograph of the semiconductor device obtained by crossed Nicol observation using a polarizing microscope is shown in FIG. 29. The area where the crystalline organic semiconductor thin film was formed was determined from the color blinking by the crossed Nicol observation, and it was confirmed that the organic semiconductor film was not formed on the CYTOP outside the area shown by the dotted line in the figure. On the other hand, it was confirmed that the highly crystalline organic semiconductor thin film having multiple crystal orientations was formed without any defects in the area surrounded by the conductive film shown by the dotted line. EXAMPLES

[0117] Evaluation of wettability of films underlying conductive and semiconductive films The contact angles were measured when droplets of water and chlorobenzene were dropped onto the surfaces to evaluate the surface energy of the gold film treated with pentafluorobenzenethiol, which was the conductive film used in Examples 1, 3, 11, 13, 15, and 16, the surface energy of the insulating film layer of CYTOP CTL809M, which was the base of the semiconductor layer used in Examples 1, 3, 6, 7, 9, 11, 13, 15, and 17, the surface energy of the silicon substrate with thermal oxide film that was surface-treated with FAS-17, which was used in Example 16, and the surface energy of the gold film, which was the conductive film used in Example 17. The results are shown in Table 2. [Table 2] TIFF0007638536000011.tif54161

[0118] In the examples, the contact angle values ​​of chlorobenzene and o-xylene, which are organic solvents used in the semiconductor solution, were larger on the insulating film surface as the base than on the conductive film in all combinations of the conductive film and the base of the semiconductor layer in the examples. The relationship with the water contact angle also showed the same results as in the previous period. Comparative Example 1

[0119] Manufacture of a semiconductor device including a conductive film that does not have a shape corresponding to the conductive film 23 shown in FIGS. 3A and 3B A semiconductor device was manufactured by the same method as that described in Example 1, except that the conductive film was formed so as not to have a shape corresponding to the conductive film 23 shown in Figures 3A and 3B, but to have only the conductive films 19 and 21 shown in Figures 3A and 3B. A photograph of the semiconductor device obtained by crossed Nicol observation using a polarizing microscope is shown in Figure 30. When the area where the crystalline organic semiconductor thin film was formed was determined from the color blinking by the crossed Nicol observation, no color blinking indicating that the organic semiconductor film was formed was observed on the CYTOP outside the area shown by the dotted line on the right of Figure 29. On the other hand, the organic semiconductor thin film was formed only on the conductive film shown by the dotted line. Therefore, an organic semiconductor thin film could not be formed in the channel area of ​​the semiconductor device in which one of the conductive films was used as a source electrode and the other was used as a drain electrode, and a semiconductor device could not be manufactured. [Explanation of symbols]

[0120] 1, 11: substrate, 2, 13: undercoat film, 3, 15: conductive film, 150: solution, 4, 17: insulating film, 5, 6, 19, 21, 23, 23', 23': conductive film, 6-1, 23-1, 23'-1, 23''-1: first portion, 6-2, 23-2, 23'-2, 23''-2: second portion, 6-3, 23-3, 23'-3, 23''-3: third portion Part, 6-4, 23-4, 23'-4, 23''-4: fourth part, 6-5, 23-5, 23'-5, 23''-5: fifth part, 23A to 23C: sub-conductive film, 23'''-6: one end, 23'''-7: other end, 7, 25: organic semiconductor film, 8-1 to 8-3, 30-1 to 30-3: region, 200, 300: blade, 250: solution

Claims

1. A first conductive film; an insulating film on the first conductive film; a second conductive film and a third conductive film on the insulating film; an organic semiconductor film on the insulating film, the second conductive film, and the third conductive film; the second conductive film includes a portion extending along a first direction, The third conductive film is a first portion located in the first direction as viewed from the second conductive film; a second portion located in a second direction perpendicular to the first direction when viewed from a region between the second conductive film and the first portion, and a third portion located in a third direction opposite to the second direction; a fourth portion located in a fourth direction opposite to the first direction as viewed from the second portion; a fifth portion located in the fourth direction as viewed from the third portion, the first portion, at least a portion of the second portion, and at least a portion of the third portion extend continuously; a surface free energy of the insulating film is smaller than a surface free energy of the second conductive film and a surface free energy of the third conductive film, a fourth conductive film on the insulating film, the fourth conductive film including a portion extending substantially parallel to the second conductive film and positioned between the fourth portion and the fifth portion; The first conductive film functions as a gate; the second conductive film functions as one of a source and a drain; the fourth conductive film functions as the other of the source and drain; Semiconductor device.

2. The third conductive film is an upper portion extending along the first direction and the fourth direction and including the second portion and the fourth portion; a lower portion extending along the first direction and the fourth direction and including the third portion and the fifth portion; an intermediate portion extending along the second direction and the third direction and including the first portion; 2. The semiconductor device according to claim 1, wherein an end of the upper portion on the first direction side is continuous with an end of the middle portion on the second direction side, and an end of the lower portion on the first direction side is continuous with an end of the middle portion on the third direction side.

3. The third conductive film is an upper portion extending along the first direction and the fourth direction and including a part of the second portion and the fourth portion; a lower portion extending along the first direction and the fourth direction and including a part of the third portion and the fifth portion; 2. The semiconductor device according to claim 1, further comprising: a central portion that extends in a curved manner from an end of the upper portion on the first direction side to an end of the lower portion on the first direction side, and that includes the first portion, a remainder of the second portion, and a remainder of the third portion.

4. The semiconductor device according to claim 1 , wherein the second conductive film and the third conductive film are made of the same material.

5. The semiconductor device according to claim 1 , wherein said second conductive film, said third conductive film and said fourth conductive film are made of the same material.

6. The semiconductor device according to claim 1 , wherein the insulating film contains a fluorine-based resin.

7. 6. The semiconductor device according to claim 1, wherein the insulating film contains a perfluoro(3-butenyl vinyl ether) polymer.

8. The semiconductor device according to claim 1 , wherein the organic semiconductor film contains a polymer organic semiconductor material or a small molecule organic semiconductor material.

9. The semiconductor device according to claim 8 , wherein the small molecule organic semiconductor material is a compound having an acene skeleton or a heteroacene skeleton.

10. a base film below the first conductive film; The semiconductor device according to claim 1 , further comprising a base body below the undercoat film.

11. The semiconductor device according to claim 10 , wherein the undercoat film contains a fluorine-based resin.

12. The semiconductor device according to claim 10 , wherein the undercoat film contains perfluoro(3-butenyl vinyl ether) polymer.

13. The semiconductor device according to claim 10 , wherein the base is flexible.

14. forming a first conductive film; forming an insulating film on the first conductive film; irradiating the first region and the second region of the insulating film with ultraviolet light; forming a second conductive film and a third conductive film in the first region and the second region, respectively; forming an organic semiconductor film on the insulating film, the second conductive film, and the third conductive film; The first region extends along a first direction, The second region is A first portion located in the first direction as viewed from the first region; a second portion located in a second direction perpendicular to the first direction when viewed from a region between the first region and the first portion, and a third portion located in a third direction opposite to the second direction; a fourth portion located in a fourth direction opposite to the first direction as viewed from the second portion; a fifth portion located in the fourth direction as viewed from the third portion, the first portion, at least a portion of the second portion, and at least a portion of the third portion extend continuously; a contact angle of a solvent, which is a main component of a solution containing a material constituting the organic semiconductor film as a solute, with respect to the insulating film is larger than a contact angle of the solvent with respect to each of the second conductive film and the third conductive film; The method for manufacturing a semiconductor device, wherein the step of forming the organic semiconductor film includes a step of applying the solution along the fourth direction.

15. forming a first conductive film; forming an insulating film on the first conductive film; irradiating a first region, a second region, and a third region of the insulating film with ultraviolet light; forming a second conductive film, a third conductive film, and a fourth conductive film in the first region, the second region, and the third region, respectively; forming an organic semiconductor film on the insulating film, the second conductive film, the third conductive film, and the fourth conductive film; The first region and the third region extend substantially parallel to each other along a first direction, The second region is a first portion located in the first direction as viewed from the first region and the third region; a second portion located in a second direction perpendicular to the first direction when viewed from the first region and a region between the third region and the first portion, and a third portion located in a third direction opposite to the second direction; a fourth portion located in a fourth direction opposite to the first direction as viewed from the second portion; a fifth portion located in the fourth direction as viewed from the third portion, the first portion, at least a portion of the second portion, and at least a portion of the third portion extend continuously; a contact angle of a solvent, which is a main component of a solution containing a material constituting the organic semiconductor film as a solute, with respect to the insulating film is larger than contact angles of the solvent with respect to each of the second conductive film, the third conductive film, and the fourth conductive film; The method for manufacturing a semiconductor device, wherein the step of forming the organic semiconductor film includes a step of applying the solution along the fourth direction.

16. The coating step includes: dropping the solution onto the insulating film; The method for manufacturing a semiconductor device according to claim 14 or 15, further comprising the step of sweeping the solution along the fourth direction with a coating member.

17. The method for manufacturing a semiconductor device according to claim 16, further comprising the step of subjecting a surface of the coating member to a liquid-repellent treatment so as to impart liquid repellency to the solvent, prior to the step of forming the organic semiconductor film.

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