Position detection device, position detection method, and article manufacturing method

Abstract

To suppress deterioration in measurement accuracy of a relative position between an original and a substrate.SOLUTION: The position detection device includes: a detection unit configured to detect diffracted light diffracted by a first diffraction grating and a second diffraction grating, the first diffraction grating including a first pattern arranged at a first period and a second pattern arranged at a second period different from the first period, the second diffraction grating including a third pattern arranged at a third period different from the first period and the second period; and a control unit configured to obtain a relative position of the first diffraction grating and the second diffraction grating on the basis of the diffracted light detected by the detection unit. The control unit obtains the relative position of the first diffraction grating and the second diffraction grating on the basis of first diffracted light diffracted by the first pattern and the third pattern and second diffracted light diffracted by the second pattern and the third pattern.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a position detection device, a position detection method, and a method for manufacturing an article. [Background technology]

[0002] Imprint technology is a technology that can form a pattern in resin supplied onto a substrate using a master (mold) on which a pattern is formed. Imprint technology has been proposed as one of the lithography techniques for mass production of semiconductor devices, magnetic storage media, and the like. An imprint device for using this imprint technology hardens the resin while it is in contact with the master, and forms a resin pattern on the substrate by separating the master from the hardened resin.

[0003] In an imprinting apparatus, when the original and the resin are brought into contact with each other, it is necessary to accurately align the original and the substrate. In the imprinting apparatus, for example, a die-by-die alignment method is adopted as an alignment method. The die-by-die alignment method is a method of aligning by detecting an alignment mark formed for each shot area of ​​the substrate and an alignment mark formed on the original.

[0004] Patent Document 1 discloses a method for measuring the relative position between the master and the substrate with high precision by using diffraction gratings (alignment marks) composed of multiple patterns on both the master and the substrate to detect multiple moiré fringes and calculating the phase difference between the multiple moiré fringes. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2008-522412 Summary of the Invention [Problem to be solved by the invention]

[0006] However, due to misalignment of the diffraction gratings, each of which is composed of a plurality of patterns, on the original and the substrate, there will be some regions where the moiré fringes used in the measurement process cannot be detected. If the measurement process is performed while avoiding such regions, the area of ​​the moiré fringes used in the measurement process will be reduced. The reduction in the area of ​​the moiré fringes used in the measurement process will increase the effect of noise that reduces the measurement accuracy, which may reduce the accuracy of measuring the relative position between the original and the substrate.

[0007] SUMMARY OF THE PRESENT DISCLOSURE An object of the present invention is to provide a position detection device capable of suppressing a decrease in the measurement accuracy of the relative position between an original and a substrate when detecting a plurality of moire fringes. [Means for solving the problem]

[0008] In order to achieve the above object, a position detection device according to one aspect of the present invention includes a detection unit that detects diffracted light diffracted by a first diffraction grating including a first pattern arranged in a first period and a second pattern arranged in a second period different from the first period, and a second diffraction grating including a third pattern arranged in a third period different from the first period and the second period, and a control unit that determines a relative position between the first diffraction grating and the second diffraction grating based on the first diffracted light diffracted by the first pattern and the third pattern, and the second diffracted light diffracted by the second pattern and the third pattern. the detection unit detects a plurality of moire fringes including a first moire fringe generated by the first diffracted light and a second moire fringe generated by the second diffracted light, and the control unit calculates a relative position between the first diffraction grating and the second diffraction grating based on the first moire fringe and the second moire fringe selected from the plurality of moire fringes detected by the detection unit. It is characterized by: Effect of the Invention

[0009] According to the present invention, it is possible to provide a position detection device that can suppress a decrease in the measurement accuracy of the relative position between an original and a substrate when detecting a plurality of moire fringes. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a schematic diagram illustrating a configuration of an imprint apparatus. [Diagram 2]1 is a flowchart showing steps of an imprint process. [Diagram 3] FIG. 3 is a diagram showing an alignment mark in the first embodiment. [Figure 4] FIG. 2 is a diagram showing a shot area on a substrate. [Diagram 5] 10A and 10B are diagrams illustrating moire fringes that occur in the present embodiment. [Figure 6] FIG. 1 is a diagram showing a sinusoidal signal of Moire fringes. [Figure 7] 10A to 10C are diagrams illustrating moire fringes that occur in a modified example of the first embodiment. [Figure 8] 1A to 1C are diagrams for explaining a method for manufacturing an article. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to refer to the same components, and duplicated explanations will be omitted.

[0012] First Embodiment Fig. 1 is a schematic diagram showing the configuration of an imprint apparatus 100 including a position detection device 170 according to this embodiment. As shown in Fig. 1, in the following drawings, an X-axis and a Y-axis perpendicular to each other are taken in a plane parallel to the plane on which a substrate W is placed, and a direction perpendicular to the X-axis and Y-axis is taken as a Z-axis.

[0013] The imprint apparatus 100 is an apparatus that brings a resin R (imprint material) applied on a substrate W into contact with a mold M (original) and applies energy for curing to the resin R, thereby forming a pattern of a cured product to which the concave-convex pattern of the mold M is transferred. For example, the imprint apparatus 100 is used in manufacturing devices such as semiconductor devices. In this embodiment, it is assumed that the imprint apparatus 100 is a UV light curing type imprint apparatus that cures a resin by irradiating it with UV light (ultraviolet light), but this is not limited thereto. For example, the imprint apparatus 100 may be a type that cures a resin by light in a wavelength range other than ultraviolet light, or a type that cures a resin by other energy (for example, heat). The position detection apparatus according to this embodiment is also applicable to other lithography apparatuses such as an exposure apparatus.

[0014] The imprint apparatus 100 forms a pattern in a plurality of shot areas on a substrate W. The imprint apparatus 100 can include an exposure mechanism 120, an original manipulation mechanism 130, an original shape correction mechanism 140, a substrate driving unit 160, an alignment mechanism 170, and a controller CNT.

[0015] The exposure mechanism 120 irradiates the resin R with ultraviolet light through the mold M, thereby curing the resin R. In this embodiment, the resin R is an ultraviolet light curable resin. The exposure mechanism 120 includes, for example, a light source unit 110 and an optical system 112. The light source unit 110 can include, for example, a light source such as a halogen lamp that generates ultraviolet light (e.g., i-rays and g-rays), and an elliptical mirror that collects the light emitted from the light source.

[0016] The optical system 112 may include a lens 113, a half mirror HM, a mirror 114, and the like for irradiating the resin in the shot area with light for curing the resin R. The optical system 112 may include an optical integrator that homogenizes the light in order to uniformly illuminate the resin R. The light that has passed through the optical system 112 is incident on the resin R applied on the substrate W via the mold M.

[0017] The scope 190 is a scope for observing the entire substrate W, and is used to check the state of the substrate W after the imprint process has been performed. The mold M is made of a material (e.g., quartz) that has high transmittance at the wavelength of ultraviolet light so as to transmit ultraviolet light. The mold M can be transported by an original transport mechanism (not shown). The original transport mechanism is, for example, a transport robot having a chuck such as a vacuum chuck.

[0018] The master operation mechanism 130 may include a master chuck 132 that holds the mold M, a master drive mechanism 134 that drives the mold M by driving the master chuck 132, and a master base 136 that supports the master drive mechanism 134. The master drive mechanism 134 includes a positioning mechanism that controls the position of the mold M in six axes, and a drive mechanism for imprinting the mold M on the resin R or for separating the mold M from the hardened resin R. Here, the above-mentioned six-axis control refers to drive control in the X-axis, Y-axis, and Z-axis directions at the position of the mold M, and rotation control about the X-axis, Y-axis, and Z-axis.

[0019] The original shape correction mechanism 140 is mounted on the original chuck 132. The original shape correction mechanism 140 can correct the shape of the mold M by applying pressure to the mold M from the outer circumferential direction using a cylinder operated by a fluid such as air or oil. Alternatively, the original shape correction mechanism 140 may include a temperature control unit that controls the temperature of the mold M, and may correct the shape of the mold M by controlling the temperature of the mold M. Since the substrate W may be deformed (e.g., expanded or contracted) by a process such as heat treatment, the original shape correction mechanism 140 corrects the shape of the mold M in accordance with the deformation of the substrate W so that the overlay error falls within an allowable range.

[0020] The coating mechanism 180 applies the resin R sequentially to shot areas of the substrate W where imprinting is to be performed, or all at once to the entire surface of the substrate W. A coating mechanism 180 configured within the apparatus may be used, or all at once coating may be performed by an external apparatus. The coating mechanism 180 may include, for example, a tank that contains the resin, a nozzle that ejects the resin supplied from the tank through a supply path onto the substrate, a valve provided in the supply path, and a supply amount control unit.

[0021] The resin R is applied in the form of a film on the substrate W by a spin coater or a slit coater. Alternatively, the resin R may be applied in the form of droplets, islands formed by connecting a plurality of droplets, or a film on the substrate W by a liquid ejection head. The viscosity of the resin R (at 25° C.) is, for example, 1 mPa·s or more and 100 mPa·s or less. For this reason, the application mechanism 180 does not need to be provided inside the imprint apparatus 100. For example, a form in which the substrate W to which the resin R has been previously supplied by a supply mechanism provided outside the imprint apparatus 100 is carried into the imprint apparatus 100 is also possible.

[0022] The substrate driving unit 160 has a substrate chuck 162 that holds the substrate W, a substrate stage 164 that drives the substrate W by driving the substrate chuck 162, and a stage driving mechanism (not shown). The stage driving mechanism may include a stage positioning mechanism that controls the position of the substrate W by controlling the position of the substrate stage 164 with respect to the above-mentioned six axes.

[0023] The position detection device 170 in this embodiment has an alignment scope 172 (detection unit) and an alignment stage mechanism 174. In addition, the control unit CNT controls each part of the position detection device 170. The alignment scope 172 may include an automatic adjustment scope (AAS) that aligns the mold M with a shot area of ​​the substrate W. The alignment scope 172 detects an alignment mark formed on the mold M and an alignment mark formed on the substrate W via the mold M. A plurality of alignment mechanisms 170 may be mounted.

[0024] The imprint apparatus 100 may include a surface plate and a vibration isolator (damper), which are not shown. The surface plate supports the entire imprint apparatus 100 and forms a reference plane when the substrate stage 164 moves. The vibration isolator can remove vibrations from the floor and support the surface plate.

[0025] The operation of the imprint apparatus 100 in this embodiment will be described with reference to Fig. 2. Fig. 2 is a flowchart showing a series of steps of the imprint process of the imprint apparatus 100. In the following description, each part of the imprint apparatus 100 is controlled by a control unit CNT.

[0026] In step S201, the mold M is carried into the imprint apparatus 100. The mold M is held by the original chuck 132. In step S202, the substrate W is carried (loaded) into the imprint apparatus 100. The substrate W is held by the substrate chuck 162. The mold M and the substrate W are provided with alignment marks. Details of the alignment marks will be described later.

[0027] In step S203, the resin R is applied to the shot area of ​​the substrate W where imprinting is to be performed by the application mechanism 180. The application of the resin R may be performed in advance by an external device, in which case step S203 is omitted. In step S204, the alignment scope 172 is driven to a position where an alignment mark of the mold M is provided.

[0028] In step S205, the original operating mechanism 130 lowers the mold M, so that the mold M is pressed against the resin applied on the substrate W. This step is also called an imprinting step. Here, instead of driving the mold M, the substrate W may be raised so that the mold M is pressed against the resin R. The load for pressing the mold M against the resin R can be adjusted by using, for example, a load sensor built into the original driving mechanism 134. In step S206, alignment measurement is performed in which alignment marks provided on the mold M and the substrate W are detected by the alignment scope 172 (detection unit). Details of the alignment measurement will be described later.

[0029] In step S207, based on the result obtained in step S206, the mold M is relatively aligned with the substrate W. Furthermore, in order to match the mold M with the shot shape of the substrate W, the shape of the mold M may be corrected by the original shape correcting mechanism 140, if necessary.

[0030] In step S208, it is determined whether the judged value of the shot shape difference between the mold M and the substrate W is equal to or less than a predetermined threshold. The shot shape difference between the mold M and the substrate W occurs due to a driving error of the original shape correction mechanism 140, etc. If the shot shape difference between the mold M and the substrate W is equal to or less than the predetermined threshold, the process proceeds to step S209. If the shot shape difference between the mold M and the substrate W is greater than the predetermined threshold, the process returns to step S206, and steps S206 and S207 are repeated until the shot shape difference between the mold M and the substrate W is equal to or less than the predetermined threshold. In addition to judging whether the judged value of the shot shape difference between the mold M and the substrate W exceeds the predetermined threshold, in step S208, it is also possible to judge whether step S207 has been executed for a predetermined time, and proceed to step S209 if the predetermined time has elapsed. Even if the predetermined time has elapsed, if alignment driving or the like is not in time, the time may be extended.

[0031] In step S209, the exposure mechanism 120 irradiates the resin R with ultraviolet light through the mold M. This hardens the resin R. In step S210, the original operating mechanism 130 raises the mold M, thereby separating the mold M from the hardened resin R. This step is also called a demolding step. Alternatively, instead of driving the mold M, the demolding step may be performed by lowering the substrate W.

[0032] In step S211, it is determined whether the imprint process has been completed for all shot areas of the substrate W. If there are any shot areas remaining for which the imprint process has not been performed, the process returns to step S203, and steps S203 to S210 are repeated. If the imprint process has been completed for all shot areas, the process proceeds to step S212. In step S212, the substrate W is unloaded from the substrate chuck 162. The above is the flow of the imprint process by the imprint apparatus 100 in this embodiment.

[0033] Next, details of the alignment marks provided on the mold M and substrate W in this embodiment will be described with reference to Fig. 3. Fig. 3(a) is a diagram showing an alignment mark AMM provided on the mold M. As shown in Fig. 3(a), the alignment mark AMM in this embodiment has a diffraction grating formed in three regions, and line-and-space patterns with different pitches (periods) are formed in adjacent regions.

[0034] The alignment mark AMM (first diffraction grating) includes a first pattern AMM1 and a second pattern AMM2. The first pattern AMM1 has a diffraction grating formed by gratings arranged at a pitch PM1 (first period) in a first region. The second pattern AMM2 has a diffraction grating formed by gratings arranged at a pitch PM2 (second period) in a second region. Also, in a third region, a diffraction grating with a pattern (fourth pattern AMM3) under the same conditions as the first region is formed. Here, the alignment mark AMM is not limited to a form divided into three regions, and may be divided into two regions or four or more regions. Also, although the form where the diffraction gratings in the first region and the third region have the same pitch is described, they may have different pitches from each other.

[0035] Figure 3(b) is a diagram showing the alignment mark AMW provided on the substrate W. As shown in Figure 3(b), the alignment mark AMW in this embodiment is formed by a line-and-space pattern with a certain pitch (period). The alignment mark AMW (second diffraction grating) includes a third pattern AMW1. The alignment mark AMW may have a pattern different from the third pattern AMW1 formed in a region different from the region where the third pattern AMW1 is formed, but a pattern different from the third pattern AMW1 is not used for the position adjustment in this embodiment. The third pattern AMW1 has a diffraction grating formed at a pitch PW1 (third period).

[0036] In this embodiment, the relationship of the pitches of the first to third patterns is PM2 < PW1 < PM1. By setting the pitches in such a relationship, the phase difference of a plurality of moiré fringes described later can be increased, so that the accuracy of alignment measurement can be improved compared to when it is in other relationships. Note that, in terms of improving the accuracy of alignment measurement, it is preferable that the relationship is as described above, but in the relationship of the pitches, the pitch PW1 may be the largest or the pitch PW1 may be the smallest.

[0037] FIG. 4(a) is a diagram showing a plurality of shot areas S formed on a substrate W. FIG. 4(b) is a diagram showing a shot area S in which a plurality of alignment marks AMW are formed. In step S206 in the flow chart of FIG. 2, an alignment scope 172 (detector) detects moire fringes generated by diffracted light passing through an alignment mark AMM provided on a mold M and an alignment mark AMW shown in FIG. 4(b). In addition, in step S206, alignment between the substrate W and the mold M can be performed by a so-called die-by-die alignment method in which the relative position between the mark of the shot area and the mark of the mold is detected for each shot area of ​​the substrate W. In the alignment measurement in this embodiment, the relative position between the first diffraction grating and the second diffraction grating in the direction in which a pattern (for example, a third pattern) is arranged can be obtained.

[0038] FIG. 5(a) is a diagram in which the alignment mark AMM and the alignment mark AMW are superimposed. In FIG. 5(a), the alignment mark AMM and the alignment mark AMW have different pitches, so that moire fringes M1 to M3 are generated. Specifically, a first moire fringe is generated in the first region by a first diffracted light diffracted by the first pattern and the third pattern, and a second moire fringe is generated in the second region by a second diffracted light diffracted by the second pattern and the third pattern. In addition, a third moire fringe is generated in the third region by a fourth pattern and the third pattern. Since the positions of the moire fringes change with a period larger than the magnitude of the relative positions actually changed by the two diffraction gratings, the position between the two objects can be measured with high accuracy even if the resolution of the alignment scope 172 (detection unit) is low.

[0039] Patent Document 1 discloses a method for measuring the relative position between the original and the substrate with high accuracy by detecting multiple moiré fringes using a diffraction grating composed of multiple patterns on each of the mold M and the substrate W, and calculating the phase difference between the multiple moiré fringes. However, due to misalignment of the diffraction grating composed of multiple patterns on each of the mold M and the substrate W, some areas are generated where the moiré fringes used for the measurement process cannot be detected. If the measurement process is performed while avoiding such areas, the area of ​​the moiré fringes used for the measurement process is reduced. The reduction in the area of ​​the moiré fringes used for the measurement process increases the effect of noise that reduces the measurement accuracy, which may reduce the accuracy of measuring the relative position between the original and the substrate.

[0040] In FIG. 5(a), the alignment mark AMM and the alignment mark AMW are described as being exactly overlapped, but in actual alignment measurement, the alignment mark AMM and the alignment mark AMW may be measured in a state where their relative positions are shifted. FIG. 5(b) is a diagram showing a state where the alignment mark AMM and the alignment mark AMW are shifted relative to each other. In FIG. 5(b), since there is no pitch boundary in the third pattern AMW1 of the alignment mark AMW, the moire fringes do not collapse at the boundary portions of the moire fringes M1 to M3. Therefore, it is possible to suppress the reduction in the area of ​​the moire fringes occurring near the boundaries of each moire fringe. In this embodiment, it is possible to suppress the reduction in the area of ​​the moire fringes used in the measurement process, so that the alignment measurement can be performed with high accuracy.

[0041] A method of performing alignment measurement using multiple moiré fringes generated by diffracted light detected by alignment scope 172 (detector) will be described. The magnification amounts (moiré magnifications) Mmag1 to Mmag3 of the moiré fringes generated in the first to third regions can be expressed as formulas (1) to (3) using PM1 (first period), PM2 (second period), and PW1 (third period). Mmag1=PM1·PW1 / 4π(PM1-PW1)···Formula (1) Mmag2=PM2·PW1 / 4π(PM2-PW1)···Formula (2) Mmag3=PM1·PW1 / 4π(PM1-PW1)···Formula (3)

[0042] 6 is a diagram showing the sine wave signals of the moiré fringes M1 to 3. The sine wave signals are processed by a Fast Fourier Transform (FFT) or a Discrete Fourier Transform (DFT), etc., to calculate the phases φ1 to φ3. From the phases φ1 to φ3 and the moiré magnifications Mmag1 to 3 calculated by equations (1) to (3), the relative position errors D1 to D3 between the mold M and the substrate W in the moiré fringes M1 to 3 can be calculated as shown in equations (4) to (6). D1=Mmag1·φ1···Formula (4) D2=Mmag2·φ2···Formula (5) D3 = Mmag3 φ3 Equation (6)

[0043] By performing an averaging process using D1 to D3 calculated using equations (4) to (6) as in equation (7), the relative position error D between the mold M and the substrate W can be calculated, canceling out the driving error and vibration of the alignment scope 172. D = ((D1 + D2) + (D3 + D2)) / 4 Equation (7)

[0044] The averaging process shown in formula (7) is just an example, and the averaging process may be performed using weighting according to a formula other than formula (7). Also, any moire fringes of D1 to D3 (for example, only D1 and D2) may be selected and the process may be performed.

[0045] In this embodiment, if the relative angle between the mold M and the substrate W is the same, φ1 and φ3 will be the same value, and therefore the relative position errors D1 and D3 will be the same value. However, if the relative angle between the mold M and the substrate W is different, φ1 and φ3 will be different values, and therefore the relative position errors D1 and D3 will be different values. Therefore, in this embodiment, by calculating the relative position error between the mold M and the substrate W from the moiré fringes in the three regions, it is possible to calculate the difference in the shape of the shot region, including the rotational component. In the alignment measurement in this embodiment, the coordinates, rotational component, magnification component, trapezoidal component, etc. of the shot region are measured.

[0046] (Modification) In this embodiment, an example has been described in which a plurality of patterns with different pitches are provided on the mold M and a single pattern is provided on the substrate W, but a plurality of patterns with different pitches may be provided on the substrate W and a single pattern may be provided on the mold M. That is, the position detection device in this embodiment may detect diffracted light diffracted by a first diffraction grating formed on one of the mold M and the substrate W and a second diffraction grating formed on the other.

[0047] In addition, in the present embodiment, an example has been described in which the pattern provided on the mold M or the substrate W is a line-and-space pattern having a period in one predetermined direction, but this is not limited thereto. For example, a checkerboard pattern having a period in two orthogonal directions may be provided.

[0048] 5(a) and 5(b) in this embodiment, the areas occupied by the alignment marks of the mold M and the substrate W are assumed to be areas of the same size, but this is not limited to this. For example, the area occupied by the alignment mark AMW of the substrate W may be larger than the area occupied by the alignment mark AMM of the mold M, or vice versa. Fig. 7 shows an example of moiré fringes detected when the area occupied by the alignment mark AMW of the substrate W is larger than the area occupied by the alignment mark AMM of the mold M.

[0049] Specifically, the area of ​​the region in which the third pattern is arranged is larger than the sum of the area of ​​the first region in which the first pattern is arranged and the area of ​​the second region in which the second pattern is arranged. Also, it is preferable that the area of ​​the region in which the third pattern is arranged is larger than the sum of the area of ​​the first region in which the first pattern is arranged, the area of ​​the second region in which the second pattern is arranged, and the area of ​​the third region in which the fourth pattern is arranged. In other words, it is preferable that the area of ​​the region in which the second diffraction grating is formed is larger than the area of ​​the region in which the first diffraction grating is formed.

[0050] In the case of Figure 7, even if the relative positions of the alignment mark AMM and the alignment mark AMW are misaligned, the area of ​​the moiré fringes does not decrease because the area of ​​the alignment mark AMW is large. In Figure 5(b), the area of ​​the moiré fringes generated in the third area decreases according to the amount of misalignment of the relative positions of the alignment marks. In contrast, in Figure 7, the area of ​​the moiré fringes generated in the third area does not decrease, so alignment measurement can be performed with higher accuracy.

[0051] In this embodiment, the mold M for transferring a circuit pattern is described, in which a concave-convex pattern is provided, but the mold M may be a mold (blank template) having a flat portion without a concave-convex pattern. The blank template is used in a flattening device that uses the flat portion to flatten a composition (resin) on a substrate. In other words, the position detection device of this embodiment is applied to a molding device (for example, an imprinting device or a flattening device) that uses a mold to mold a composition on a substrate.

[0052] As described above, in this embodiment, by detecting a plurality of diffracted light beams by the position detection device 170, it is possible to perform alignment measurement between the mold M and the substrate W with high accuracy. Furthermore, by performing alignment measurement between the mold M having a plurality of patterns with different pitches and the substrate W having a single pattern, it is possible to suppress a reduction in the number of moiré fringes that are generated and to suppress a decrease in the measurement accuracy of the relative position between the mold M and the substrate W.

[0053] <Embodiments of the method for manufacturing an article> Next, a method for manufacturing an article (such as an electric circuit element, an optical element, a MEMS, a recording element, a sensor, or a mold) using the above-mentioned imprint apparatus 100 will be described. The pattern of the cured material formed by the imprint apparatus 100 is used permanently on at least a part of various articles, or temporarily when manufacturing various articles. Examples of the electric circuit element include volatile or non-volatile semiconductor memories such as DRAM, SRAM, flash memory, and MRAM, and semiconductor elements such as LSI, CCD, image sensor, and FPGA. Examples of the mold include a mold for imprinting.

[0054] The pattern of the cured product is used as it is, or is used temporarily as a resist mask, as at least a part of the component of the article. After etching or ion implantation is performed in the substrate processing step, the resist mask is removed. Further, well-known processes for processing the substrate include oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.

[0055] Next, a specific method for manufacturing the article will be described. As shown in Fig. 8(a), a substrate 1z such as a silicon wafer is prepared with a workpiece 2z such as an insulator formed on its surface, and then an imprint material 3z (resin) is applied to the surface of the workpiece 2z by an inkjet method or the like. Here, a state in which the imprint material 3z in the form of multiple droplets is applied onto the substrate is shown.

[0056] As shown in Fig. 8(b), the imprinting mold 4z is placed so that the side on which the concave-convex pattern is formed faces the imprinting material 3z on the substrate. As shown in Fig. 8(c), the substrate 1z to which the imprinting material 3z has been applied is brought into contact with the mold 4z, and pressure is applied. The imprinting material 3z fills the gap between the mold 4z and the workpiece 2z. When light is irradiated through the mold 4z in this state as energy for hardening, the imprinting material 3z hardens.

[0057] 8(d), after the imprint material 3z is cured, the mold 4z and the substrate 1z are separated, and a pattern of the cured product of the imprint material 3z is formed on the substrate 1z. In this cured product pattern, the recesses of the mold correspond to the protrusions of the cured product, and the protrusions of the mold correspond to the recesses of the cured product, i.e., the recessed and protruding patterns of the mold 4z are transferred to the imprint material 3z.

[0058] As shown in FIG. 8(e), when etching is performed using the pattern of the cured material as an etching-resistant mask, the portion of the surface of the workpiece 2z where there is no cured material or where only a thin portion remains is removed, forming a groove 5z. As shown in FIG. 8(f), when the pattern of the cured material is removed, an article having a groove 5z formed on the surface of the workpiece 2z can be obtained. Here, the pattern of the cured material is removed, but it may be used as an interlayer insulating film included in a semiconductor element or the like, that is, a component of an article, without being removed after processing. The article manufacturing method of this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article, compared to conventional methods.

[0059] Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist of the present invention. [Explanation of symbols]

[0060] 170 Position detection device 172 Alignment scope (detection part) AMM alignment mark (first grating) AMM1 1st pattern AMM2 2nd pattern AMW alignment mark (second diffraction grating) AMW1 3rd pattern CNT control section M mold PM1 1st cycle PM2 2nd cycle PW1 3rd period W substrate

Claims

1. a detection unit that detects diffracted light diffracted by a first diffraction grating including a first pattern arranged with a first period and a second pattern arranged with a second period different from the first period, and a second diffraction grating including a third pattern arranged with a third period different from the first period and the second period; a control unit that determines a relative position between the first diffraction grating and the second diffraction grating based on a first diffracted light diffracted by the first pattern and the third pattern and a second diffracted light diffracted by the second pattern and the third pattern, the detection unit detects a plurality of moire fringes including a first moire fringe generated by the first diffracted light and a second moire fringe generated by the second diffracted light; the control unit calculates a relative position between the first diffraction grating and the second diffraction grating based on the first moire fringe and the second moire fringe selected from the plurality of moire fringes detected by the detection unit. A position detection device comprising:

2. The position detection device according to claim 1, characterized in that the control unit determines the relative position of the first diffraction grating and the second diffraction grating in the direction in which the third pattern is arranged based on the first diffracted light and the second diffracted light.

3. 2. The position detection device according to claim 1, wherein the control unit calculates a relative position between the first diffraction grating and the second diffraction grating based on the first period, the second period, the third period, a phase of the first moire fringes, and a phase of the second moire fringes.

4. 2. The position detection device according to claim 1, wherein the control unit calculates the relative position between the first diffraction grating and the second diffraction grating based on a result of averaging processing of the relative positions between the first diffraction grating and the second diffraction grating calculated from a plurality of moiré fringes detected by the detection unit.

5. an area of ​​a region in which the third pattern is arranged is larger than a sum of an area of ​​a region in which the first pattern is arranged and an area of ​​a region in which the second pattern is arranged; a position of a region in which the first pattern is arranged and a position of a region in which the second pattern is arranged are included in the region in which the third pattern is arranged, on a plane parallel to the plane in which the third pattern is arranged; 5. The position detection device according to claim 1, wherein the position detection device is a position detection device having a plurality of sensors.

6. an area of ​​a region in which the second diffraction grating is formed is larger than an area of ​​a region in which the first diffraction grating is formed; a position of a region in which the first diffraction grating is formed in a plane parallel to a plane in which patterns included in the second diffraction grating are arranged is included in a region in which the second diffraction grating is formed; 6. The position detection device according to claim 1, wherein the position detection device is a position detection device having a first and a second movable member.

7. 7. The position detection device according to claim 1, wherein the second diffraction grating is composed of only the third pattern.

8. 8. The position detection device according to claim 1, wherein the third period is smaller than the first period and larger than the second period.

9. the first diffraction grating further includes a fourth pattern arranged in the first period and in a region different from the first pattern, 9. The position detection device according to claim 1, wherein a relative angle between the first diffraction grating and the second diffraction grating is determined based on a first diffracted light diffracted by the first pattern and the third pattern, and a third diffracted light diffracted by the fourth pattern and the third pattern.

10. 10. The position detection device according to claim 1, wherein at least one of the patterns arranged on the first diffraction grating and the second diffraction grating is a line and space pattern having a period in a predetermined direction.

11. 11. The position detection device according to claim 1, wherein at least one of the patterns arranged on the first diffraction grating and the second diffraction grating is a checkerboard pattern having a period in two orthogonal directions.

12. a detection step of detecting diffracted light diffracted by a first diffraction grating including a first pattern arranged with a first period and a second pattern arranged with a second period different from the first period, and a second diffraction grating including a third pattern arranged with a third period different from the first period and the second period; a control step of determining a relative position between the first diffraction grating and the second diffraction grating based on a first diffracted light diffracted by the first pattern and the third pattern and a second diffracted light diffracted by the second pattern and the third pattern, In the detection step, a plurality of moire fringes including a first moire fringe generated by the first diffracted light and a second moire fringe generated by the second diffracted light are detected; in the control step, a relative position between the first diffraction grating and the second diffraction grating is calculated based on the first moire fringe and the second moire fringe selected from the plurality of moire fringes detected in the detection step. A position detection method comprising:

13. A molding apparatus for molding a composition by contacting a mold with a composition applied onto a substrate, the apparatus comprising: A molding apparatus comprising the position detection device according to any one of claims 1 to 11, which detects diffracted light diffracted by a first diffraction grating formed on one of the mold and the substrate, and a second diffraction grating formed on the other of the mold and the substrate.

14. 1. An imprinting apparatus that forms a concave-convex pattern in a resin by bringing a mold into contact with the resin applied on a substrate, comprising:

12. An imprint apparatus comprising: a position detection device according to claim 1, which detects diffracted light diffracted by a first diffraction grating formed on one of the mold and the substrate, and a second diffraction grating formed on the other of the mold and the substrate.

15. A molding step of molding the composition applied onto a substrate using the molding apparatus according to claim 13; A processing step of processing the substrate molded in the molding step, A method for manufacturing an article, comprising manufacturing an article from a substrate processed in the processing step.

16. a molding step of molding a resin applied onto a substrate by using the imprint apparatus according to claim 14; A processing step of processing the substrate molded in the molding step, A method for manufacturing an article, comprising manufacturing an article from a substrate processed in the processing step.

Images