Substrate bonding apparatus and substrate bonding method

Abstract

To suppress damage to a substrate functional surface, generation of foreign matters, chip flying and the like in performing substrate alignment, thereby bonding substrates together with good quality.SOLUTION: A substrate bonding device includes: a lower plate 20; a lift pin 41 which is provided at the lower plate 20 and rises and falls while supporting carried substrates S1, S2; a holding part 32 which receives, from the lift pin 41, the substrate S1 carried at first and holds the substrate S1; an upper press part 30 which is arranged above the lower plate 20 and is capable of contacting to a top side of the upper substrate S1 of the two substrates S1, S2 to be bonded together; a support member 80 which is provided at the lower plate 20 and contacts to a bottom outer periphery F1 of the substrate S1 to support the substrate S1 when the lift pin 41 falls; and an alignment mechanism 60 which positions the substrate S1 by sandwiching the substrate S1 supported by the support member 80, and positions the substrate S2 by sandwiching the substrate S2 carried in later while the substrate S2 is supported by the lift pin 41.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate bonding apparatus and a substrate bonding method. [Background technology]

[0002] There is known a substrate bonding apparatus that bonds a plurality of substrates in a stacked state. As such a substrate bonding apparatus, a configuration is disclosed in which a first wafer is placed on a second wafer held on a stage, and a pressure force is applied from a pressure mechanism to the first wafer, thereby pressure bonding the first wafer and the second wafer (for example, see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2007-301593 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the substrate bonding apparatus disclosed in Patent Document 1, prior to pressure bonding of the first wafer and the second wafer, the first wafer and the second wafer are aligned. At this time, the alignment is performed by an alignment mechanism while the first wafer and the second wafer are supported from below by a support member. In the case of the first wafer with its functional surface facing downward, moving the first wafer for alignment may cause friction between the support member and the functional surface, which may lead to damage to the functional surface, generation of foreign matter, chip flying, etc.

[0005] An object of the present invention is to provide a substrate bonding apparatus and a substrate bonding method that can bond substrates together with good quality while suppressing damage to the functional surfaces of the substrates, generation of foreign matter, chip flying, etc., when aligning the substrates. [Means for solving the problem]

[0006] In one aspect of the present invention, there is provided a substrate bonding apparatus comprising a lower plate, lift pins provided on the lower plate which support and raise and lower a substrate brought in, a holding section which receives and holds a previously brought in substrate from the lift pins, and an upper pressing section which is arranged above the lower plate and can abut against the upper surface side of the substrate held by the holding section, and which raises the later brought in substrate with the lift pins to bond the previously brought in substrate and the later brought in substrate together, the substrate bonding apparatus comprising: a support member provided on the lower plate which abuts against the outer periphery of the lower surface of the previously brought in substrate when the lift pins are lowered to support the substrate; and an alignment mechanism which positions the substrate by clamping the substrate supported by the support member in a direction along the surface of the substrate, and positions the substrate by clamping the later brought in substrate among the substrates to be bonded in a direction along the surface of the substrate while supported by the lift pins. In addition, an aspect of the present invention provides a substrate bonding apparatus for bonding two substrates together, the substrate bonding apparatus comprising: a lower plate on a lower side; lift pins provided on the lower plate which support and raise and lower a substrate brought in; a holding section which receives and holds the substrate brought in earlier from the lift pins; an upper pressing section which is disposed above the lower plate and can abut against the upper surface side of the upper substrate of the two substrates to be bonded; a support member provided on the lower plate which abuts against the outer periphery of the lower surface of the substrate when the lift pins are lowered to support the substrate; and an alignment mechanism which positions the substrate by clamping the substrate supported by the support member in a direction along the surface of the substrate.

[0007] In one aspect of the present invention, there is provided a method for bonding two substrates, the method including supporting a loaded substrate with lift pins, receiving a previously loaded substrate from the lift pins and holding it with a holding section, passing the substrate from the lift pins to a support member abutting the outer periphery of the lower surface of the substrate, supporting the upper substrate of the two substrates to be bonded with the support member, positioning the substrate by clamping the substrate supported by the support member in a direction along the surface of the substrate, and loading later the lower substrate of the two substrates to be bonded, and positioning the substrate by clamping the substrate in a direction along the surface of the substrate while supported by the lift pins. Also, an aspect of the present invention provides a method for bonding two substrates, the method including supporting a loaded substrate with lift pins, passing the substrate from the lift pins to a support member abutting the outer periphery of the lower surface of the substrate and supporting the substrate with the support member, and positioning the substrate by clamping the substrate supported by the support member in a direction along the surface of the substrate. Effect of the Invention

[0008] According to the aspects of the present invention, since the functional surfaces of the substrates are not contacted when aligning the substrates, damage to the functional surfaces of the substrates and generation of foreign matter are suppressed, and the substrates can be bonded together with good quality. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing an example of a substrate bonding apparatus according to a first embodiment. [Diagram 2] FIG. 2 is a view of the upper substrate as viewed from below. [Diagram 3] FIG. 2 is a cross-sectional view of the upper substrate. [Figure 4] FIG. 4 is a plan view of the lower plate as viewed from above. [Diagram 5] 5 is a cross-sectional view taken along the line A-A in FIG. 4. [Figure 6] 4 is a flowchart showing an example of a substrate bonding method according to the embodiment. [Figure 7]6, which is a flowchart showing an example of the substrate bonding method according to the embodiment. [Figure 8] 13A and 13B show an example of the operation of the substrate bonding apparatus, in which the upper substrate is carried into the chamber and supported by lift pins. [Figure 9] 11A and 11B are diagrams showing an example of the operation of the substrate bonding apparatus, in which an upper substrate is placed on a supporting member. [Figure 10] 13A to 13C are diagrams showing an example of the operation of the substrate bonding apparatus, in which an alignment operation is performed on the upper substrate. [Figure 11] FIG. 13 shows an example of the operation of the substrate bonding apparatus, in which the upper substrate is held by a holding portion (suction pad). [Figure 12] 13A and 13B show an example of the operation of the substrate bonding apparatus, in which the lower substrate is carried into the chamber and supported by lift pins. [Figure 13] 13A to 13C are diagrams showing an example of the operation of the substrate bonding apparatus, in which a warp suppression bake process is performed on the lower substrate. [Figure 14] 13A and 13B are diagrams showing an example of the operation of the substrate bonding apparatus, in which the lower substrate is supported by the lower plate. [Figure 15] 13A to 13C are diagrams showing an example of the operation of the substrate bonding apparatus, in which an alignment operation is performed on the lower substrate. [Figure 16] 13A to 13C are diagrams showing an example of the operation of the substrate bonding apparatus, in which the lift pins are raised to bond the upper substrate and the lower substrate together. [Figure 17] FIG. 13 shows an example of the operation of the substrate bonding apparatus, in which the lift pins are lowered after the holding by the holding parts is released, and the bonded upper and lower substrates are lowered. [Figure 18] 13A and 13B are diagrams showing an example of the operation of the substrate bonding apparatus, in which the bonded upper and lower substrates are transferred from the lift pins to the arm. [Figure 19] FIG. 11 is a diagram showing an example of a substrate bonding apparatus according to a second embodiment. [Figure 20] 10 is a flowchart showing another example of the substrate bonding method according to the embodiment. [Figure 21] 7, is a flowchart showing another example of the substrate bonding method according to the embodiment. [Figure 22] 13A and 13B show an example of the operation of the substrate bonding apparatus, in which the upper substrate is carried into the chamber and supported by lift pins. [Figure 23] 11A and 11B are diagrams showing an example of the operation of the substrate bonding apparatus, in which an upper substrate is placed on a supporting member. [Figure 24] 13A to 13C are diagrams showing an example of the operation of the substrate bonding apparatus, in which an alignment operation is performed on the upper substrate. [Diagram 25] FIG. 13 shows an example of the operation of the substrate bonding apparatus, in which the upper substrate is held by a holding portion (spacer). [Figure 26] 13A and 13B show an example of the operation of the substrate bonding apparatus, in which the lower substrate is carried into the chamber and supported by lift pins. [Figure 27] 13A to 13C are diagrams showing an example of the operation of the substrate bonding apparatus, in which a warp suppression bake process is performed on the lower substrate. [Figure 28] 13A and 13B are diagrams showing an example of the operation of the substrate bonding apparatus, in which the lower substrate is supported by the lower plate. [Figure 29] 13A to 13C are diagrams showing an example of the operation of the substrate bonding apparatus, in which an alignment operation is performed on the lower substrate. [Diagram 30] FIG. 13 shows an example of the operation of the substrate bonding apparatus, in which the upper pressing portion is lowered and the upper substrate is pushed by the pusher pin, thereby bonding the upper substrate and the lower substrate together. [Diagram 31] 11A and 11B are diagrams showing an example of the operation of the substrate bonding apparatus, in which the spacers are retracted. [Diagram 32] 13A and 13B show an example of the operation of the substrate bonding apparatus, in which the lift pins are lowered to lower the bonded upper and lower substrates. [Diagram 33] 13A and 13B are diagrams showing an example of the operation of the substrate bonding apparatus, in which the bonded upper and lower substrates are transferred from the lift pins to the arm. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following description. In addition, in the drawings, some parts are omitted in order to easily explain the embodiment. Furthermore, some parts are enlarged or emphasized, and the scale is appropriately changed, and the size and shape may differ from the actual product. In each of the following drawings, the directions in the drawings will be described using an XYZ orthogonal coordinate system. In this XYZ orthogonal coordinate system, a plane parallel to the horizontal plane is the XY plane. In this XY plane, the direction parallel to the transport direction of the substrates S1 and S2 is the X direction, and the direction perpendicular to the X direction is the Y direction. In addition, the direction perpendicular to the XY plane is expressed as the Z direction (height direction). In the X direction, Y direction, and Z direction, the direction indicated by the arrow in the drawing is the + direction, and the direction opposite to the direction indicated by the arrow is the - direction.

[0011] [First embodiment] <Substrate bonding equipment> A substrate bonding apparatus 100 according to the first embodiment will be described. FIG. 1 is a diagram showing an example of the substrate bonding apparatus 100 according to the first embodiment. The substrate bonding apparatus 100 bonds a substrate S1 on which an adhesive layer F is formed and a substrate S2 on which an adhesive layer F is formed by bringing the adhesive layers F into contact with each other. The adhesive layer F is not limited to being formed on both the substrate S1 and the substrate S2, and may be formed on either the substrate S1 or the substrate S2. The adhesive layer F is formed by applying the adhesive layer F to the substrates S1 and S2 by, for example, a coating device and drying the substrates before they are carried into the substrate bonding apparatus 100. The coating device may be provided in the substrate bonding apparatus 100.

[0012] In this embodiment, of the two substrates to be bonded, the upper substrate is referred to as substrate S1, and the lower substrate is referred to as substrate S2. Substrates S1 and S2 are, for example, glass substrates, semiconductor substrates, resin substrates, etc. In this embodiment, for example, the upper substrate S1 is a glass substrate, and the lower substrate S2 is a silicon substrate. Also, the form in which substrates S1 and S2 are bonded is referred to as substrate S (see FIG. 18). Both substrates S1 and S2 are circular substrates that are circular in plan view (as viewed from the Z direction), but are not limited to circular substrates, and may be rectangular (square, rectangular) substrates, elliptical, oval, or other substrates in plan view.

[0013] FIG. 2 is a view of the upper substrate S1 as viewed from below. FIG. 3 is a cross-sectional view of the upper substrate S1. As shown in FIGS. 2 and 3, the upper substrate S1 has a lower surface facing downward when it is loaded into the chamber 10, and a lower surface outer peripheral portion F1 and a lower surface inner peripheral portion F2 are formed on the lower surface. The lower surface inner peripheral portion F2 is formed on the inner peripheral side of the lower surface of the substrate S1. The lower surface outer peripheral portion F1 is formed on the outer peripheral side of the lower surface inner peripheral portion F2. The lower surface outer peripheral portion F1 is formed in a continuous ring-shaped area along the outer peripheral portion of the lower surface of the substrate S1 when viewed from below. When the functional area Af of the substrate S1 faces downward, the functional area Af is formed on the lower surface inner peripheral portion F2. When an element such as a semiconductor chip is mounted on the lower surface of the substrate S1 by adhesive or the like, the area where the element is mounted forms the functional area Af. When an adhesive layer F is formed on the substrate S1, this adhesive layer F forms the functional area Af.

[0014] 1, the substrate bonding apparatus 100 includes a chamber 10, a lower plate 20, an upper holding unit 30A, a lift unit 40, a shaft unit 51, an alignment mechanism 60, and a control unit C. The control unit C controls the overall operation of each unit in the substrate bonding apparatus 100.

[0015] In the substrate bonding apparatus 100, to bond the substrates S1 and S2 together, the substrate S1 is first carried into the chamber 10, and after alignment by the alignment mechanism 60, the substrate S1 is raised by the lift unit 40 and held by the suction pad 32, which is a holding unit provided on the upper pressing unit 30A. The suction pad 32 will be described later. Thereafter, the substrate S2 is carried into the chamber 10, and after alignment by the alignment mechanism 60, the substrate S2 is raised by the lift unit 40 and bonded to the substrate S1 held by the suction pad 32. When the substrate S1 is carried into the chamber 10, the substrate S1 is transported with the functional area Af facing downward (-Z direction). When the substrate S2 is carried into the chamber 10, the substrate S2 is carried into the chamber 10 with the adhesive layer F facing upward (+Z direction).

[0016] The chamber 10 is disposed on a base 15 of the substrate bonding apparatus 100. The chamber 10 is formed in a box shape having a side wall 10a rising upward from the outer periphery of the base 15 and a top plate 10b covering the upper part of the side wall 10a. The chamber 10 accommodates a lower plate 20, an upper holding part 30A, a lift part 40, a part of the shaft part 51, an alignment mechanism 60, and the upper holding part 30A. The chamber 10 is formed in a box shape and has an opening 11 in a part of the side wall 10a. The opening 11 is formed on the surface of the -X side of the chamber 10 and communicates the inside and outside of the chamber 10. The opening 11 is formed to a size that allows the substrates S1 and S2 held by the transport device 90 (see FIG. 8(B)) and the substrate S having both of them bonded thereto to pass through.

[0017] The substrates S1 and S2 are respectively carried into the chamber 10 through the opening 11 by the arm 91 of the transport device 90. The substrate S is carried out from the chamber 10 through the opening 11. In this embodiment, the transport device 90 has two flat-plate-shaped arms 91, and when carrying the substrate S1 into the chamber 10, the transport device 90 adsorbs the substrate S1 from the upper side thereof to hold the substrate S1, and when carrying the substrate S2 into the chamber 10 and when carrying the substrate S2 out of the chamber 10, the transport device 90 adsorbs the substrates S2 and S from the lower sides thereof to hold the substrates S2 and S. Note that when carrying the substrates S2 and S, the arm 91 may be configured to hold the substrates S2 and S by placing them on the upper surface side of the arm 91 without adsorbing them. Note that the number of arms 91 is not limited to two, and may be three or more.

[0018] The chamber 10 includes a gate valve 12 that opens and closes the opening 11. The gate valve 12 is disposed on the outer side of the -X side of the chamber 10, and can slide, for example, in the vertical direction (Z direction) by a drive unit (not shown). The gate valve 12 opens and closes the opening 11 by sliding. Note that even if the opening 11 is closed by the gate valve 12, the chamber 10 is in a state of being open to the atmosphere. Also, the inside of the chamber 10 may be sealed by closing the opening 11, and the inside of the chamber 10 may be in a vacuum atmosphere. Also, a through-hole 10h through which a shaft portion 51 (described later) passes is provided on the upper surface of the chamber 10. The shaft portion 51 is inserted into the through-hole 10h. Note that the shaft portion 51 may be provided so as to be movable up and down.

[0019] The substrate bonding apparatus 100 may or may not include the chamber 10, and may be of a type not including the chamber 10 (open to the atmosphere). When the chamber 10 is to be a vacuum atmosphere, the chamber 10 is connected to a suction device (not shown). The chamber 10 can be suctioned (exhausted) by the suction device to create a vacuum atmosphere. The chamber 10 may further include a valve that can be opened to the outside in order to release the vacuum atmosphere inside. The chamber 10 may also be connected to a gas supply device (not shown). The chamber 10 can be conditioned to a predetermined gas atmosphere by supplying a predetermined gas from the gas supply device into the chamber 10. As the predetermined gas, for example, a gas inert to the thin films formed on the substrates S1 and S2, such as nitrogen gas, or dry air is used.

[0020] The lower plate 20 supports from below the substrates S1, S2 that are carried into the chamber 10. The lower plate 20 has a circular shape when viewed from above, but is not limited to this shape and may be, for example, a rectangular shape (square shape, oblong shape), an elliptical shape, an oval shape, etc. The lower plate 20 is set to have an outer diameter larger than the substrates S1, S2.

[0021] The lower plate 20 has a support plate 21, a heater (heating unit) 22, and a base plate 23. The support plate 21, the heater 22, and the base plate 23 are stacked in this order from the lower side (-Z side). The lower plate 20 is supported by a plurality of supports 24 provided on the lower surface side of the support plate 21. The support plate 21 and the heater 22, and the heater 22 and the base plate 23 are fixed by fastening members such as bolts. The support plate 21, the heater 22, and the base plate 23 are provided with a plurality of through holes 20a in the vertical direction through which lift pins 41 of a lift unit 40 described later penetrate. It is optional whether or not to provide the heater (heating unit) 22, and the lower plate 20 may be in a form not provided with the heater (heating unit) 22.

[0022] The support plate 21 is a plate-like body made of, for example, a material such as metal, resin, or ceramic. The heater 22 is an example of a heating unit, and is, for example, a hot plate having a heating mechanism (heat source) such as an electric heating wire inside. The heater 22 heats the substrates S1 and S2 via the base plate 23. The heater 22 may be a laminated structure in which a sheet-like heat source is sandwiched between the substrates. The substrates S1, S2, and the substrate S are arranged on the upper surface 23f side of the base plate 23, which is the surface on the +Z side. The base plate 23 is a plate-like body made of, for example, ceramic, but may be made of metal, resin, or the like. The upper surface 23f of the base plate 23 may be a surface that comes into contact with the substrate S2. Therefore, it is preferable that the upper surface 23f has a high flatness and a small surface roughness (or is a mirror surface).

[0023] A plurality of support columns 24 are provided on the lower surface of the support plate 21. The plurality of support columns 24 are used to support the lower plate 20 on the base 15 at the bottom of the chamber 10. Note that the number and arrangement of the support columns 24 are not limited to the above-mentioned form, and any configuration capable of supporting the lower plate 20 may be applied.

[0024] As shown in FIG. 1, the upper pressing part 30A presses the upper substrate S1 toward the substrate S2 (the lower plate 20) when the substrates S1 and S2 are attached to each other. The upper pressing part 30A includes a base 31 provided at the lower part of the shaft part 51 and a suction pad (holding part) 32 provided on the lower surface side of the base 31. The base 31 and the suction pad 32 are, for example, circular when viewed from above, but are not limited to this shape and may be, for example, rectangular (square, oblong), elliptical, or oval. The base 31 and the suction pad 32 are set to have an outer diameter smaller than the substrates S1 and S2. The outer diameter of the base 31 and the suction pad 32 can be set arbitrarily.

[0025] The upper holding portion 30A is provided at the lower end of the shaft portion 51, and its position is fixed in the vertical direction. However, if the shaft portion 51 is capable of rising and falling, the upper holding portion 30A may be configured to rise and fall together with the shaft portion 51. The suction pad 32 can hold the substrate S1 by suctioning the upper surface of the substrate S1 supported by the lift pins 41 that has risen, with the lower surface 32a serving as an suction surface. The suction pad 32 is fixed to the base portion 31 by a fastening member such as a bolt. The suction pad 32 may have any configuration, and may be, for example, a vacuum suction pad or an electrostatic suction pad. The upper holding portion 30A may be configured to include a heater (heating portion). Instead of the upper holding portion 30A being configured to include a heater, a heater that heats the inside of the chamber 10 may be provided.

[0026] The lift unit 40 is provided below the lower plate 20. The lift unit 40 supports the substrates S1, S2, S above the lower plate 20 and raises and lowers the substrates S1, S2, S. The lift unit 40 lowers the supported substrates S1, S2 and places them on the lower plate 20 so that the substrates S1, S2 carried into the chamber 10 are aligned by the alignment mechanism 60. The lift unit 40 raises the supported substrate S1 so that the substrate S1 aligned by the alignment mechanism 60 is held by the suction pad 32. The lift unit 40 raises the substrate S2 aligned by the alignment mechanism 60 so that the substrate S2 is bonded to the substrate S1.

[0027] The lift unit 40 has a plurality of lift pins 41, a moving unit 42 connected to the lower ends of the lift pins 41 and moving up and down in the Z direction, and a lift pin driving unit 43 that moves the moving unit 42 up and down. The plurality of lift pins 41 are disposed in the center of the lower plate 20. The plurality of lift pins 41 support the substrates S1 and S2 by hitting the centers of the substrates S1 and S2 from below. When the functional area Af of the substrate S1 faces downward, the lift pins 41 abut against the functional area Af to support the substrate S1. Note that, after the substrates S1 and S2 are placed on the lower plate 20, the upper ends of the lift pins 41 are not in contact with the substrates S1 and S2.

[0028] Fig. 4 is a plan view of the lower plate 20 viewed from above. As shown in Fig. 4, the lift pins 41 are arranged so as to penetrate through a plurality of through holes 20a provided in the lower plate 20. The heights of the upper ends of the plurality of lift pins 41 are the same or approximately the same. The lift pins 41 may be made of, for example, a non-conductive material (for example, resin, metal, ceramics, etc.).

[0029] The moving part 42 moves up and down by driving the lift pin driving part 43. The multiple lift pins 41 move up and down simultaneously as the moving part 42 moves up and down. The lift pin driving part 43 uses, for example, an electric rotary motor, a linear motor, an air cylinder device, a hydraulic cylinder device, or the like, and a driving force is transmitted to the moving part 42 by a transmission mechanism (not shown).

[0030] The alignment mechanism 60 positions the substrates S1 and S2 with respect to the lower plate 20. As shown in FIG. 1 and FIG. 4, the alignment mechanism 60 includes a plurality of alignment drive units 61 and a plurality of alignment blocks 62. The alignment blocks 62 are used to align (position) the substrates S1 and S2 by pinching the substrates S1 and S2 from the radial direction. The alignment blocks 62 are arranged at intervals in the circumferential direction around the central axis AX of the lower plate 20 on the outer periphery of the base plate 23 of the lower plate 20. The alignment blocks 62 are arranged at intervals in the circumferential direction around the central axis AX, for example, five of them. Each of the alignment blocks 62 can be moved in a direction along the surface of the substrates S1 and S2 by a guide (not shown). The alignment blocks 62 are preferably formed of a conductive material to prevent the substrates S1 and S2 from being charged.

[0031] The alignment drive unit 61 moves each of the multiple alignment blocks 62 in the radial direction of the base plate 23. The alignment drive unit 61 has a drive source, for example, a cylinder device or an electric motor, and a transmission mechanism that transmits the drive force generated by the drive source to each of the alignment blocks 62.

[0032] The alignment mechanism 60 drives the alignment drive unit 61 to advance the alignment block 62 in the radial direction of the base plate 23, and sandwiches the substrates S1 and S2 by pressing the outer circumferential edges of the substrates S1 and S2 in a direction parallel to the upper surface 23f of the base plate 23. The alignment mechanism 60 drives the alignment drive unit 61 to advance and retreat the alignment block 62 in the radial direction of the base plate 23, thereby positioning the substrates S1 and S2 with respect to the lower plate 20 and the upper pressing unit 30A.

[0033] The operation of the alignment mechanism 60 is controlled by the control unit C. When the alignment block 62 is used, the control unit C reads the shapes of the substrates S1 and S2 acquired by another unit (not shown), for example, and determines the alignment positions for the substrates S1 and S2, and then operates the alignment block 62. Note that the specific configuration of the alignment mechanism 60 is not limited in any way as long as it can perform the required function, and it can be changed to another configuration as appropriate. For example, in FIG. 4, of the five alignment mechanisms 60 provided, the upper two alignment mechanisms 60 may be fixed, and the lower three alignment mechanisms 60 may be movable and advanceable. In this case, the three movable alignment mechanisms 60 perform alignment by driving the alignment drive unit 61 to advance the alignment block 62 and pushing the outer periphery of the substrates S1 and S2 toward the two fixed alignment mechanisms 60. In the alignment mechanism 60, the number of the alignment blocks 62 that are movable or the number that are fixed can be set appropriately.

[0034] Fig. 5 is a cross-sectional view taken along the line A-A in Fig. 4. As shown in Figs. 4 and 5, the lower plate 20 is provided with a support member 80. The support member 80 supports the lower surface outer periphery F1 of the substrate S1 from below when the substrate S1 is positioned by the alignment mechanism 60. As shown in Fig. 5, when the substrate S1 with the functional area Af facing downward is received from the lift pins 41, the multiple pins 81 support the substrate S1 by abutting against the lower surface outer periphery F1, which is outside the functional area Af. The support member 80 is provided on the base plate 23 of the lower plate 20.

[0035] When the lift pins 41 supporting the substrates S1 and S2 are lowered, the support members 80 come into contact with the lower surface outer periphery F1 of the substrate S1 to support the substrate S1. The support members 80 are provided at three or more locations spaced apart in the circumferential direction of the lower plate 20. The support members 80 are provided, for example, at four locations spaced apart in the circumferential direction of the lower plate 20. The support members 80 are, for example, pins 81 protruding from the upper surface of the lower plate 20. By bringing the pins 81 into contact with the lower surface outer periphery F1 of the substrates S1 and S2, the substrates S1 and S2 can be stably supported with a simple configuration.

[0036] The tip of the pin 81 is hemispherical with the outer diameter gradually decreasing upward. Since the tip of the pin 81 is hemispherical, the tip of the pin 81 can be brought into contact with the lower surface outer periphery F1 of the substrate S1 by point contact. Therefore, when the substrate S1 is moved in a direction along the surface of the substrate S1 for positioning, the friction generated between the substrate S1 and the tip of the pin 81 can be kept small. In addition, since the tip of the pin 81 is in contact with the lower surface outer periphery F1, the functional area Af is not damaged, and furthermore, the occurrence of chip flying can be avoided. The shape of the tip of the pin 81 is not limited to a hemispherical shape, and may be another shape as appropriate.

[0037] 4, the multiple alignment blocks 62 are arranged offset relative to the multiple pins 81 in the circumferential direction of the lower plate 20. With this configuration, when the alignment mechanism 60 positions the substrates S1, S2, the multiple alignment blocks 62 advance and retreat in directions along the surfaces of the substrates S1, S2 to sandwich the substrates S1, S2, interference between the alignment blocks 62 and the pins 81 can be suppressed.

[0038] <Board joining method> Next, a substrate bonding method according to this embodiment will be described. FIG. 6 is a flowchart showing an example of the substrate bonding method according to this embodiment. FIG. 7 is a flowchart showing an example of the substrate bonding method according to this embodiment, following FIG. 6. This substrate bonding method is executed, for example, by instructions from the control unit C. FIG. 8 to FIG. 18 are process diagrams showing an example of the operation of the substrate bonding apparatus 100. Note that in these process diagrams, descriptions are simplified so that the operation of each part can be easily understood. Below, a description will be given along the flowcharts of FIG. 6 and FIG. 7.

[0039] First, the gate valve 12 of the chamber 10 is opened and a substrate is loaded (step S01). As shown in Fig. 8, the control unit C drives a drive unit (not shown) to raise the gate valve 12 and open the opening 11. Next, the substrate S1 (upper substrate) is loaded into the chamber 10. At this time, the control unit C raises the lift pins 41 to a height for transferring the substrate S1.

[0040] The arm 91 of the transfer device 90, holding the substrate S1 on its underside, enters the chamber 10 through the opening 11 and places the substrate S1 above the lift pins 41. The arm 91 holds the substrate S1 by suction using a suction pad (not shown) or the like provided on its underside. The control unit C then lowers the arm 91 and transfers the substrate S1 from the arm 91 to the lift pins 41 (step S02). The lift pins 41 abut against the center of the inner periphery F2 of the lower surface of the substrate S1 from below. The arm 91 then exits the chamber 10. If the substrate S1 has an adhesive layer F, the adhesive layer F is on the lower side when the substrate S1 is carried into the chamber 10.

[0041] 9, the control unit C lowers the lift pins 41 supporting the substrate S1, and places the substrate S1 on the multiple support members 80 (pins 81) of the lower plate 20 (step S03). At this time, the lift pins 41 are lowered to a position lower than the multiple support members 80 (i.e., the lower surface of the substrate S1), and the substrate S1 is supported by the multiple support members 80. With this configuration, the substrate S1 is not in contact with the lift pins 41, and is supported only by the multiple support members 80 that are in contact with the lower surface outer periphery F1 from below. The substrate S1 may also be heated by the heater 22.

[0042] Subsequently, an alignment operation is performed on the substrate S1 (step S04). As shown in FIG. 10, the control unit C drives the alignment drive unit 61 to advance each alignment block 62 radially inward, and positions the substrate S1 by sandwiching the substrate between the alignment blocks 62. At this time, the substrate S1 is supported at the lower surface outer periphery F1 by the support members 80. Therefore, when the substrate S1 is positioned by the alignment blocks 62, rubbing occurs between the support members 80 and the lower surface outer periphery F1 of the substrate S1 when the substrate S1 is moved within a plane along the lower surface of the substrate S1. After the alignment operation, the control unit C retracts each alignment block 62 radially outward, and then raises the lift pins 41 to position the substrate S1 above the spacers 72.

[0043] Next, the substrate S1 is held by the suction pad 32 (step S05). As shown in FIG. 11, the control unit C raises the lift pins 41, receives the substrate S1 from the support member 80, raises the substrate S1, and abuts the substrate S1 against the suction surface 32a of the suction pad 32 of the upper holding unit 30A. The control unit C drives the suction pad 32 to a state in which it can be adsorbed beforehand when the substrate S1 abuts. As a result, the substrate S1 is held by the suction pad 32. Thereafter, the lift pins 41 are lowered, so that the lift pins 41 are separated from the substrate S1.

[0044] Next, substrate S2 (lower substrate) is carried into chamber 10 (step S06). As shown in FIG. 12, control unit C lowers lift pins 41 to a height for transferring substrate S2. Then, arm 91 carries substrate S2 into chamber 10 and positions it above lift pins 41. Arm 91 holds substrate S2 by suction on its lower surface. Then, control unit C lowers arm 91 and transfers substrate S2 from arm 91 to lift pins 41. Arm 91 then exits chamber 10. Note that when substrate S2 is carried into chamber 10, adhesive layer F is on the upper side.

[0045] Next, the gate valve 12 is closed, and a warp suppression bake process is performed to suppress warpage of the substrate S2 (step S07). As shown in FIG. 13, after the gate valve 12 is closed, the substrate S2 is heated by, for example, the heater 22 to perform the warp suppression bake process. By baking the substrate S2, the shape of the substrate S2 can be stabilized and warpage of the substrate S2 can be suppressed. This warp suppression bake process is performed while the temperature in the chamber 10 is maintained at, for example, 150° C. to 250° C. Note that, even if the gate valve 12 is closed, the above-mentioned steps S02 to S07 are performed with the chamber 10 open to the atmosphere. However, for example, steps S03, S04, S07, etc. may be performed with the chamber 10 in a vacuum atmosphere.

[0046] 14, the lift pins 41 are lowered to place the substrate S2 on the lower plate 20. The lift pins 41 are lowered to a position lower than the support members 80, so that the substrate S2 is supported only by the support members 80. With this configuration, the substrate S2 is not in contact with the lift pins 41, and is supported by the support members 80 that contact the lower surface outer periphery F1 from below. Thereafter, the substrate S2 is heated by the heater 22, and the warp suppression bake process may be performed in an open-to-air state, or the warp suppression bake process may be performed in a vacuum state in the chamber 10. This warp suppression bake process is performed by setting the temperature of the heater 22 to, for example, 150°C to 250°C.

[0047] Subsequently, an alignment operation is performed on the substrate S2 (step S08). As shown in FIG. 15, the control unit C drives the alignment drive unit 61 to advance each alignment block 62 radially inward, and positions the substrate S2 by sandwiching the substrate S2 between the alignment blocks 62. At this time, the substrate S2 is supported at the lower surface outer periphery F1 by the support members 80. Therefore, when the substrate S2 is moved within a plane along the lower surface of the substrate S2 to position the substrate S2 with the alignment blocks 62, friction occurs only between the support members 80 and the lower surface outer periphery F1 of the substrate S1. The alignment operation in step S08 is similar to the alignment operation in step S04. Therefore, the substrates S1 and S2 are positioned at approximately the same position in a plan view.

[0048] Next, as shown in FIG. 16, the control unit C raises the lift pins 41 to raise the substrate S2, thereby bonding the substrates S1 and S2 together (step S09). At this time, the suction pads 32 of the upper pressing unit 30A press the upper surface side of the substrate S1, and the substrate S2 is raised by the lift pins 41 to be superimposed on the substrate S1, thereby bonding the substrates S1 and S2 together. That is, the suction pads 32 function as a holding unit that holds the substrate S1, and also have a function of pressing the upper surface of the substrate S1 by contacting it. In step S09, the adhesive layer F of the substrate S1 and the adhesive layer F of the substrate S2 come into contact with each other, thereby bonding the substrates S1 and S2 together. The force with which the substrates S1 and S2 are bonded together is controlled by the force with which the lift pins 41 rise. Instead of raising the lift pins 41, the upper presser 30A that holds the substrate S1 may be lowered, or the lift pins 41 may be raised and the upper presser 30A may be lowered.

[0049] Then, the suction pad 32 releases the suction of the substrate S1 (step S10). After the substrates S1 and S2 are bonded together, the control unit C releases the suction of the substrate S1 by the suction pad 32. Then, as shown in FIG. 17, the lift pins 41 are lowered to place the substrate S after bonding at a height for carrying out. This process separates the substrate S from both the lower plate 20 and the upper pressing unit 30A. Then, the gate valve 12 is opened to carry out the substrate S from the chamber 10 (step S11). As shown in FIG. 18, the gate valve 12 is raised to open the opening 11, and then the arm 91 of the transfer device 90 is inserted into the chamber 10 from the opening 11, and the arm 91 is placed below the substrate S supported by the lift pins 41. Then, the control unit C raises the arm 91 and holds the substrate S on the upper surface of the arm 91 by suction, thereby transferring the substrate S from the lift pins 41 to the arm 91. Note that the arm 91 may be configured not to hold the substrate S by suction, but to hold the substrate S by placing it on the upper surface of the arm 91. Thereafter, the arm 91 retreats from the chamber 10, and the substrate S is carried out to the outside of the chamber 10. Thereafter, the control unit C closes the gate valve 12, and ends a series of processes.

[0050] [Second embodiment] <Substrate bonding equipment> A substrate bonding apparatus 200 according to the second embodiment will be described. FIG. 19 is a diagram showing an example of the substrate bonding apparatus 200 according to the second embodiment. In FIG. 19 and the subsequent figures, the same components as those in the first embodiment are given the same reference numerals, and the description thereof will be omitted or simplified. The substrate bonding apparatus 200 bonds a substrate S1 on which an adhesive layer F is formed and a substrate S2 on which an adhesive layer F is formed by abutting the adhesive layers F of the substrates. As shown in FIG. 19, the substrate bonding apparatus 200 includes a chamber 10, a lower plate 20, an upper pressing unit 30B, a lift unit 40, a lifting mechanism 50, an alignment mechanism 60, a spacer mechanism 70, and a control unit C. The control unit C controls the operation of each unit in the substrate bonding apparatus 200.

[0051] In the substrate bonding apparatus 200, to bond the substrates S1 and S2 together, first, the substrate S1 is carried into the chamber 10 and aligned by the alignment mechanism 60, and then the substrate S1 is lifted by the lift unit 40 and held by the spacer mechanism 70. Thereafter, the substrate S2 is carried into the chamber 10 and aligned by the alignment mechanism 60, and then the substrate S2 is lifted by the lift unit 40 and bonded to the substrate S1 held by the spacer mechanism 70. The chamber 10 contains the lower plate 20, the upper presser unit 30B, the lift unit 40, a part of the elevation mechanism 50, the alignment mechanism 60, and the spacer mechanism 70.

[0052] The shaft 51 is inserted into the through-hole 10h on the upper surface of the chamber 10 in a state where it can be raised and lowered, and the inside of the chamber 10 is kept sealed by a sealing member (not shown). The inside of the chamber 10 can be sealed by closing the opening 11 with the gate valve 12. The inside of the chamber 10 can be made into a vacuum atmosphere by sucking (exhausting) the inside of the chamber 10 with a suction device (not shown). Furthermore, the chamber 10 may be provided with a valve that can be opened to the outside in order to release the vacuum atmosphere inside. Also, the inside of the chamber 10 may be connected to a gas supply device (not shown). It is optional whether or not the substrate bonding apparatus 200 includes the chamber 10, and it may be a type that does not include the chamber 10 (open to the atmosphere).

[0053] The lower plate 20, the support plate 21, the heater 22, the base plate 23, and the support columns 24 are similar to those in the first embodiment described above, and therefore the description thereof will be omitted.

[0054] As shown in FIG. 19, the upper pressing part 30B presses the upper substrate S1 toward the substrate S2 (the lower plate 20) when the substrates S1 and S2 are attached to each other. The upper pressing part 30A includes a base 31 and a plurality of pusher pins 33 provided on the lower surface side of the base 31. The plurality of pusher pins 33 are provided so as to extend downward from the base 31 at intervals from each other. Each of the plurality of pusher pins 33 is provided at its lower end with a pin 33a that can be pushed upward by an elastic member (not shown). The upper pressing part 30B is provided at the lower end of the shaft part 51, and its position is fixed in the vertical direction. However, if the shaft part 51 is capable of rising and falling, the upper pressing part 30B may be configured to rise and fall together with the shaft part 51.

[0055] The lift unit 40 lowers the supported substrates S1 and S2 and places them on the lower plate 20 in order to align the substrates S1 and S2 carried into the chamber 10 with the alignment mechanism 60. The lift unit 40 raises the supported substrate S1 in order to hold the substrate S1 aligned with the alignment mechanism 60 on the spacer 72. The lift unit 40 raises the substrate S2 in order to bond the substrate S2 aligned with the alignment mechanism 60 to the substrate S1. The lift pins 41, the moving unit 42, the lift pin driving unit 43, and the alignment mechanism 60 are the same as those in the first embodiment and therefore will not be described.

[0056] The lifting mechanism 50 lowers the upper presser portion 30B and presses the substrate S1 towards the substrate S2 side (the lower plate 20 side) when bonding the substrates S1 and S2 together. The lifting mechanism 50 includes the shaft portion 51 described above and a drive portion 52 that drives the shaft portion 51. The shaft portion 51 is disposed in the center of the base portion 31 when viewed from above. The drive portion 52 lifts and lowers the shaft portion 51. The drive portion 52 may be, for example, an air cylinder device, a hydraulic cylinder device, or a ball screw mechanism using an electric rotary motor.

[0057] The drive unit 52 is controlled by the control unit C. The load applied to the shaft unit 51 by the drive unit 52 and the drive timing for applying the load are integrally controlled by the control unit C based on a preset program or the like. Also, some or all of the operation of the drive unit 52 may be performed by an operator. By raising and lowering the shaft unit 51 by the drive unit 52, the upper presser unit 30B rises and falls integrally with the shaft unit 51.

[0058] 19, the spacer mechanism 70 receives and supports the previously loaded substrate S1 from the lift pins 41. The spacer mechanism 70 includes a plurality of spacer driving units 71 and a plurality of spacers (holding units) 72. The spacer driving unit 71 is provided in the chamber 10. The spacer driving unit 71 moves the spacer 72 in the X direction or the Y direction. The spacer driving unit 71 includes, for example, a driving source such as a cylinder device or an electric motor, and a transmission mechanism that transmits the driving force generated by the driving source to the spacer 72.

[0059] The spacer 72 is movable in a radial direction about the central axis AX in a plane perpendicular to the Z direction by a guide (not shown). The spacer 72 is preferably made of a conductive material to prevent the substrates S1 and S2 from being charged. The spacer mechanism 70 drives the spacer drive unit 71 to advance the spacer 72 and position it below the outer periphery of the substrate S1, thereby holding the substrate S1 placed on the lift pins 41. The operation of the spacer mechanism 70 is controlled by the control unit C.

[0060] <Board joining method> Next, the substrate bonding method according to this embodiment will be described. FIG. 20 is a flowchart showing another example of the substrate bonding method according to this embodiment. FIG. 21 is a flowchart showing another example of the substrate bonding method according to this embodiment, following FIG. 20. This substrate bonding method is executed, for example, by instructions from the control unit C. FIG. 22 to FIG. 33 are process diagrams showing an example of the operation of the substrate bonding apparatus 200. In these process diagrams, the description is simplified so that the operation of each part can be easily understood. Below, the description will be given along the flowcharts of FIG. 20 and FIG. 21.

[0061] First, the gate valve 12 of the chamber 10 is opened to load the substrate (step S101). As shown in FIG. 22, the control unit C raises the gate valve 12 to open the opening 11. Next, the arm 91 of the transfer device 90 loads the substrate S1 from the opening 11 into the chamber 10 and transfers it to the lift pins 41 (step S102). Next, as shown in FIG. 23, the control unit C lowers the lift pins 41 to place the substrate S1 on the multiple support members 80 (pins 81) of the lower plate 20 (step S103). The substrate S1 may also be heated by the heater 22.

[0062] Next, as shown in FIG. 24, the control unit C performs an alignment operation on the substrate S1 (step S104). Step S104 is the same as step S04 shown in FIG. 6, so the description will be omitted. After the alignment operation, the control unit C retreats each alignment block 62 radially outward, and then raises the lift pins 41 to position the substrate S1 above the spacers 72. Next, the substrate S1 is held by the spacers 72 (step S105). As shown in FIG. 25, the control unit C raises the lift pins 41, receives the substrate S1 from the support member 80, and after raising the substrate S1, drives the spacer driving unit 71 to advance the spacer 72 and position the spacer 72 on the lower surface side of the substrate S1. Then, the lift pins 41 are lowered, so that the substrate S1 is held by the spacers 72.

[0063] Next, the substrate S2 is carried into the chamber 10 (step S106). As shown in FIG. 26, the lift pins 41 are lowered to a height for transferring the substrate S2, and then the arm 91 transfers the substrate S2 from the arm 91 to the lift pins 41. Next, the gate valve 12 is closed, and a warpage suppression bake process is performed to suppress warpage of the substrate S2 (step S107). As shown in FIG. 27, after the gate valve 12 is closed, the substrate S2 is heated by the heater 22 while the chamber 10 is evacuated by a suction device (not shown), for example, to perform the warpage suppression bake process. The warpage suppression bake process can be performed with the gate valve 12 open (i.e., in an atmosphere-open state).

[0064] Next, a vacuum atmosphere is created in the chamber 10 (step S108). The chamber 10 is evacuated by a suction device (not shown), thereby creating a vacuum atmosphere in the chamber 10. Then, as shown in FIG. 28, the lift pins 41 are lowered to place the substrate S2 on the lower plate 20. Then, the substrate S2 is heated by the heater 22, and the warp suppression bake process may be performed in a vacuum atmosphere, or may be performed in an open-to-air state. Next, the control unit C performs an alignment operation on the substrate S2 as shown in FIG. 29 (step S109). Step S109 is the same as step S08 shown in FIG. 6, and therefore a description thereof will be omitted. The alignment operation in step S109 is the same as the alignment operation in step S104.

[0065] Next, the control unit C raises the lift pins 41 to raise the substrate S2 and bring the substrate S2 close to the lower surface of the spacer 72 (step S110). The upper surface of the substrate S2 may be separated from the lower surface of the spacer 72 or may be in contact with the lower surface of the spacer 72. In this state, the spacer 72 is sandwiched between the substrates S1 and S2. The substrates S1 and S2 may be in contact with each other in the portion where the spacer 72 is not present. Next, as shown in FIG. 30, the control unit C drives the drive unit 52 to lower the upper pressing unit 30 together with the shaft unit 51, and the pusher pins 33 of the upper pressing unit 30 press the substrate S1 against the substrate S2, thereby overlapping the substrates S1 and S2 (step S111).

[0066] In step S111, the pin 33a provided at the lower end of the pusher pin 33 is pressed into the pusher pin 33 against the elastic force of the elastic member. With this configuration, the multiple pusher pins 33 can press the substrate S1 against the substrate S2 in a well-balanced manner.

[0067] Next, the control unit C retreats the spacer 72 to its original position as shown in FIG. 31 (step S112). By retreating the spacer 72, the portion sandwiching the spacer 72 is eliminated, and the substrate S1 is pushed by the pusher pin 33, so that the substrates S1 and S2 are bonded together. Next, as shown in FIG. 32, the lift pin 41 is lowered to place the substrate S, which has been bonded, at a height for carrying out. This process separates the substrate S from both the lower plate 20 and the upper pressing unit 30B. After that, a valve (not shown) is opened to open the chamber 10 to the atmosphere, or a predetermined gas is supplied into the chamber 10 to purge the chamber 10 (step S113). For example, nitrogen gas, dry air, or the like is used as the predetermined gas.

[0068] 33, the gate valve 12 is opened to unload the substrate S from the chamber 10 (step S114). After the opening 11 is opened, the substrate S is unloaded by the arm 91 of the transfer device 90. Thereafter, the control unit C closes the gate valve 12 to end the series of processes.

[0069] As described above, in the substrate bonding apparatus 100, 200 according to the embodiment, the support member 80 abuts against the outer peripheral portion F1 of the lower surface of the substrates S1, S2 to support the substrate S1, and therefore, when positioning the substrate S1, it is possible to prevent the support member 80 from rubbing against the inner peripheral portion F2 of the lower surface of the substrate S1. Therefore, according to the substrate bonding apparatus 100, 200 according to the embodiment, it is possible to prevent damage to the functional surface of the substrate S1, generation of foreign matter, chip flying, etc., when performing alignment, and to bond the substrates S1, S2 together with good quality.

[0070] Although the embodiment and the modified examples have been described above, the present invention is not limited to the above description, and various modifications are possible within the scope of the present invention. In the above embodiment, the embodiment is described by taking as an example a form in which two substrates S1 and S2 are bonded together, but the present invention is not limited to this form. For example, the present invention may be a form in which another substrate is bonded to the substrate S to which the substrate S1 and the substrate S2 are bonded together.

[0071] In the above embodiment, when the substrate S2 is positioned by the alignment block 62, the substrate S2 is supported by a plurality of support members 80. However, in the case of the substrate S2, the substrate S2 may be positioned by being clamped by the alignment block 62 while being supported by the lift pins 41. [Explanation of symbols]

[0072] 10. Chamber 20 Lower plate 23f...Top surface 30A, 30B: Upper presser part 32... Suction pad (holding part) 33···Pusher pin 41 Lift pin 50 Lifting mechanism 60 Alignment mechanism 62 Alignment block 72 Spacer (retaining part) 80... Support member 81···pin 100, 200... Substrate bonding equipment Af...functional region F1...Bottom outer periphery S... Substrate

Claims

1. a substrate bonding apparatus including a lower plate, lift pins provided on the lower plate for supporting and raising and lowering a substrate carried in, a holding section for receiving and holding a previously carried in substrate from the lift pins, and an upper pressing section disposed above the lower plate and capable of contacting an upper surface side of the substrate held by the holding section, the apparatus raising the subsequently carried in substrate by the lift pins to bond the previously carried in substrate to the subsequently carried in substrate, a support member provided on the lower plate, the support member contacting an outer periphery of a lower surface of the substrate that has been previously loaded and supporting the substrate when the lift pins are lowered; an alignment mechanism that positions the substrate by clamping the substrate supported by the support member in a direction along a surface of the substrate, and positions the substrate by clamping the substrate that is carried in later among the substrates to be bonded in a direction along the surface of the substrate while being supported by the lift pins; A substrate bonding apparatus comprising:

2. 2. The substrate bonding apparatus according to claim 1, wherein the support members are pins provided at three or more locations spaced apart in the circumferential direction of the lower plate and protruding from the upper surface of the lower plate.

3. the alignment mechanism includes a plurality of alignment blocks capable of moving forward and backward in a direction along a surface of the substrate to sandwich the substrate; The substrate bonding apparatus according to claim 2 , wherein each of the plurality of alignment blocks is arranged in a circumferentially offset state with respect to the pins.

4. the lift pins support the substrate by contacting the functional area when the functional area of ​​the substrate faces downward; The substrate bonding apparatus according to claim 1 , wherein the support member supports the substrate by contacting an outer periphery of the lower surface of the substrate received from the lift pins, the outer periphery being outside the functional area.

5. The substrate bonding apparatus according to claim 1 , wherein the upper pressing portion is capable of rising and falling, and further comprises a lifting mechanism for lifting and lowering the upper pressing portion.

6. 6. The substrate bonding apparatus according to claim 1, wherein one or both of the lower plate and the upper pressing portion are provided with a heating portion for heating the substrate.

7. The substrate bonding apparatus according to claim 1 , further comprising a chamber that houses the lower plate and the upper pressing portion.

8. 3. The substrate bonding apparatus according to claim 2, wherein the tip of said pin is hemispherical.

9. A method for bonding two substrates, comprising the steps of: supporting the loaded substrate with lift pins; receiving the previously loaded substrate from the lift pins and holding the substrate with a holding portion; a support member that is in contact with an outer periphery of a lower surface of the substrate and supports the upper substrate of the two substrates to be bonded together by the support member; positioning the substrate by clamping the substrate supported by the support member in a direction along a surface of the substrate; a lower substrate of the two substrates to be bonded is subsequently brought in, and the substrate is positioned by being sandwiched in a direction along the surface of the substrate while being supported by the lift pins.

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