Substrate processing method, element chip manufacturing method, resin film forming method, and resin film forming apparatus

Abstract

To achieve a simply applicable step applicable even when a complicated structure exists on a surface of a substrate.SOLUTION: A substrate processing method includes: a preparation step of preparing a substrate 1 which has a first main surface 1X and a second main surface 1Y opposite to the first main surface 1X, and has an element area EA in the first main surface 1X and a division area DA having a groove 11 surrounding the element area EA; a spray step of spraying a raw material liquid for a resin film from a nozzle 32 toward the first main surface 1X of the substrate 1 arranged with the first main surface 1X facing downward, and thereby forming a resin film RF in the first main surface 1X so that a film thickness coating the element area EA becomes larger than a film thickness coating a bottom part 11a of the groove 11; and an etching step of etching the division area DA by plasma using the resin film RF as a mask.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method, a manufacturing method for a component chip, a resin film forming method, and a resin film forming apparatus. [Background technology]

[0002] Conventionally, a method of plasma dicing a substrate is known (for example, Patent Document 1). In the method of Patent Document 1, the surface of the substrate is covered with a resin film such as photoresist, and then the resin film covering the device structure is left while the resin film covering the streets is removed. Then, the exposed streets are etched with plasma. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2014-513868 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the patterning process for removing the resin film covering the streets requires labor and cost using expensive equipment such as a developing device and a laser device. It is desirable to develop a simple process that can omit such a patterning process. In this situation, one of the objectives of the present disclosure is to realize a process that can be easily applied even when a complex structure exists on the substrate surface. [Means for solving the problem]

[0005] One aspect of the present disclosure relates to a substrate processing method, the substrate processing method including: a preparation step of preparing a substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having an element region and a division region having a groove surrounding the element region, a spraying step of spraying a resin film source solution from a nozzle toward the first main surface of the substrate arranged with the first main surface facing downward, thereby forming a resin film on the first main surface such that a film thickness covering the element region is larger than a film thickness covering a bottom of the groove, and an etching step of etching the division region with plasma using the resin film as a mask.

[0006] Another aspect of the present disclosure relates to a method for manufacturing element chips, the method including: a preparation step of preparing a substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having an element region and a division region having a groove surrounding the element region, a spraying step of spraying a resin film source solution from a nozzle toward the first main surface of the substrate arranged with the first main surface facing downward, thereby forming a resin film on the first main surface such that the thickness of the film covering the element region is greater than the thickness of the film covering a bottom of the groove, and a plasma dicing step of dividing the substrate into a plurality of element chips by etching the division region with plasma using the resin film as a mask.

[0007] Another aspect of the present disclosure relates to a resin film forming method, the resin film forming method including: a preparation step of preparing a substrate having a first main surface and a second main surface opposite to the first main surface, the substrate having an element region and a dividing region having a groove surrounding the element region on the first main surface; and a spraying step of spraying a resin film source solution from a nozzle toward the first main surface of the substrate, the first main surface of which faces downward, to form a resin film on the first main surface such that a thickness of the resin film covering the element region is larger than a thickness of the resin film covering a bottom of the groove.

[0008] Another aspect of the present disclosure relates to a resin film forming apparatus for forming a resin film on a first main surface of a substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having an element region and a dividing region having a groove surrounding the element region, the resin film forming apparatus including a holding unit for holding the substrate with the first main surface facing downward, and a nozzle for spraying a raw material liquid of the resin film toward the first main surface of the substrate held to form a resin film on the first main surface such that the thickness of the resin film covering the element region is greater than the thickness of the resin film covering a bottom of the groove. Effect of the Invention

[0009] According to the present disclosure, it is possible to realize a process that can be easily applied even when a complex structure is present on the substrate surface. [Brief description of the drawings]

[0010] [Figure 1A] FIG. 2 is a top view showing a schematic diagram of a transport carrier and a substrate held by the transport carrier; [Figure 1B] FIG. 1B is a cross-sectional view taken along line BB shown in FIG. 1A. [Diagram 2] FIG. 2 is an enlarged cross-sectional view illustrating a schematic configuration of a substrate. [Diagram 3] FIG. 1 is a diagram showing a schematic diagram of a resin film forming apparatus according to a first embodiment. [Figure 4] FIG. 4 is an enlarged cross-sectional view for explaining a spraying process. [Diagram 5] FIG. 2 is an enlarged cross-sectional view showing a substrate on which a resin film is formed. [Figure 6] 1 is a schematic cross-sectional view showing a structure of a plasma processing apparatus; [Figure 7] FIG. 2 is an enlarged cross-sectional view showing the state after the substrate has been etched. [Figure 8] FIG. 11 is a diagram showing a schematic diagram of a resin film forming apparatus according to a second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] The following describes the embodiments of the resin film forming apparatus, the resin film forming method, the substrate processing method, and the manufacturing method of the element chip according to the present disclosure. However, the present disclosure is not limited to the examples described below. In the following description, specific numerical values ​​and materials may be exemplified, but other numerical values ​​and materials may be applied as long as the effects of the present disclosure are obtained.

[0012] (Resin film forming equipment) The resin film forming apparatus according to the present disclosure includes a holding portion and a nozzle.

[0013] The holding unit holds a substrate having a first main surface and a second main surface with the first main surface facing downward. The second main surface is a main surface opposite to the first main surface. The substrate has an element region and a division region having a groove surrounding the element region on the first main surface. The holding unit may be a stage that adsorbs and holds the substrate (or the substrate and the transport carrier).

[0014] In this specification, the state in which the first main surface of the substrate faces downward includes not only a state in which the normal direction of the first main surface and the vertical direction coincide with each other, but also a state in which the normal direction of the first main surface and the vertical direction form an angle with each other. In this case, the angle formed by the normal direction of the first main surface and the vertical direction may be, for example, 0 to 60°.

[0015] The nozzle sprays a raw material liquid for the resin film toward the first main surface of the substrate held by the holder. The nozzle forms a resin film on the first main surface of the substrate by spraying the raw material liquid in such a manner that the film thickness covering the element region is greater than the film thickness covering the bottom of the groove. Since almost no resin film is formed on the bottom of the groove on the first main surface of the substrate, it is possible to perform a subsequent plasma treatment without performing a patterning step for removing the resin film in the division region.

[0016] (Resin film formation method) The resin film forming method according to the present disclosure includes a preparation step and a spraying step.

[0017] In the preparation step, a substrate having the same configuration as described above is prepared.

[0018] In the spraying step, a raw material liquid for a resin film is sprayed from a nozzle toward the first main surface of the substrate, which is placed with the first main surface facing downward. In the spraying step, a resin film is formed on the first main surface of the substrate by spraying the raw material liquid in such a way that the film thickness covering the element region is greater than the film thickness covering the bottom of the groove. Since almost no resin film is formed on the bottom of the groove on the first main surface of the substrate, it is possible to perform a subsequent plasma treatment without performing a patterning step to remove the resin film in the division region.

[0019] Since the first main surface of the substrate faces downward, the sprayed resin film raw material liquid is prevented from flowing to the bottom of the groove. Therefore, even if a complex structure exists on the first main surface of the substrate, the bottom of the groove is not covered with a thick resin film. On the other hand, in a known spin coating method, if a complex structure exists on the first main surface, it is difficult to remove only the resin film on the street after covering the first main surface with the resin film.

[0020] (Substrate processing method) The substrate processing method according to the present disclosure includes an etching step in addition to the above-mentioned preparation step and spray step.

[0021] In the etching step, the resin film formed in the spraying step is used as a mask to etch the dividing region with plasma. This allows the grooves in the dividing region to be dug even deeper. A patterning step does not need to be performed between the spraying step and the etching step.

[0022] (Method of manufacturing element chip) The method for manufacturing a component chip according to the present disclosure includes a plasma dicing step in addition to the above-mentioned preparation step and spraying step.

[0023] In the plasma dicing process, the resin film formed in the spraying process is used as a mask to etch the dividing regions with plasma, thereby dividing the substrate into multiple device chips. This allows multiple device chips to be obtained at low cost. A patterning process does not need to be performed between the spraying process and the plasma dicing process.

[0024] As described above, according to the present disclosure, it is possible to omit the patterning process of removing the resin film covering the dividing regions or the streets after forming the resin film. In addition, it is possible to realize a process that can be easily applied even when a complex structure exists on the substrate surface. Furthermore, according to the present disclosure, it is possible to manufacture multiple element chips at low cost from a substrate having a complex structure.

[0025] In the spraying step, the raw material liquid may be sprayed from a nozzle in a direction different from the normal direction of the first main surface. In other words, the raw material liquid may be sprayed obliquely with respect to the depth direction of the groove. In this case, at least a part of the bottom of the groove is in a blind spot when viewed from the nozzle outlet. Therefore, a relatively thick resin film is formed on the surface of the element region, while a relatively thin resin film can be formed on the bottom of the groove, or no resin film can be formed on the bottom of the groove.

[0026] In the spraying step, the angle between the direction of spraying the raw material liquid from the nozzle and the normal direction of the first main surface may be θ, and the aspect ratio of the groove may be X, so that arctan(1 / X)<θ holds. In this case, substantially the entire bottom of the groove is in the blind spot as viewed from the nozzle outlet. Therefore, the resin film formed at the bottom of the groove can be made even thinner. The aspect ratio of the groove refers to a value given by D / W, where D is the depth of the groove and W is the opening width of the groove (X=D / W). Usually, the raw material liquid is sprayed in a cone shape from the apex of the nozzle outlet. The direction of spraying the raw material liquid from the nozzle may be the direction of the axis of such a cone.

[0027] In the spraying step, the nozzle may spray the raw material liquid while rotating the substrate relative to the nozzle. In this case, the substrate may rotate, the nozzle may rotate, or both the substrate and the nozzle may rotate. The substrate or the nozzle may rotate about a normal line passing through the center of the substrate as a rotation axis. This allows the resin film to be formed substantially uniformly over the entire element region of the first main surface.

[0028] In the spraying process, a nozzle cover having an opening may be disposed between the nozzle and the substrate, and the raw material liquid may be sprayed from the nozzle through the opening of the nozzle cover. With this configuration, the dripping raw material liquid can be captured by the edge of the opening of the nozzle cover. The sprayed raw material liquid can be prevented from adhering to the nozzle outlet.

[0029] In the spraying step, a part of the raw material liquid sprayed from the nozzle may be blocked by a nozzle cover. In this case, the raw material liquid sprayed in a direction that forms a relatively small angle with the normal direction of the first main surface may be blocked. More specifically, the raw material liquid that forms an angle with the normal direction of the first main surface that is smaller than arctan(1 / X) may be blocked. This allows the thickness of the resin film formed at the bottom of the groove to be made even thinner.

[0030] In the following, an example of the resin film forming apparatus, the resin film forming method, the substrate processing method, and the manufacturing method of the element chip according to the present disclosure will be specifically described with reference to the drawings. The above-mentioned components or steps can be applied to the components of the resin film forming apparatus, or the steps of the resin film forming method, the substrate processing method, and the manufacturing method of the element chip, of the example described below. The components of the resin film forming apparatus, or the steps of the resin film forming method, the substrate processing method, and the manufacturing method of the element chip, of the example described below, can be changed based on the above description. In addition, the matters described below may be applied to the above embodiment. Among the components of the resin film forming apparatus, or the steps of the resin film forming method, the substrate processing method, and the manufacturing method of the element chip, of the example described below, the components and steps that are not essential to the resin film apparatus, the resin film forming method, the substrate processing method, and the manufacturing method of the element chip according to the present disclosure may be omitted. Note that the figures shown below are schematic and do not accurately reflect the shape and number of the actual members.

[0031] First Embodiment The resin film forming apparatus 30 of this embodiment is an apparatus for forming a resin film RF on the surface of a substrate 1. In the following, first, the substrate 1 on which the resin film is formed and the transport carrier 10 for transporting the substrate will be described, and then the resin film forming apparatus 30 and a resin film forming method will be described.

[0032] -Substrate and transport carrier- 1A and 1B, the transport carrier 10 includes a holding sheet 3 and an annular frame 2 that supports the outer periphery of the holding sheet 3. The frame 2 may be provided with a notch 2a or a corner cut 2b for positioning. The outer periphery of the adhesive surface 3X of the holding sheet 3 is attached to one surface of the frame 2. The second main surface 1Y of the substrate 1 is attached to the portion of the adhesive surface 3X that is exposed through the opening of the frame 2.

[0033] 2, the substrate 1 has a first main surface 1X and a second main surface 1Y opposite to the first main surface 1X. The substrate 1 has, on the first main surface 1X, a plurality of element regions EA and divided regions DA having grooves 11 surrounding each of the element regions EA. The substrate 1 is transported together with the transport carrier 10 with the second main surface 1Y attached to the holding sheet 3 and the first main surface 1X exposed. The aspect ratio of the grooves 11 of the substrate 1 of this embodiment may be, for example, 5 to 20.

[0034] Although not shown in the drawings, the substrate 1 may include a single layer or multiple layers. An example of the single layer is a semiconductor layer made of silicon or the like. An example of the multiple layers is a device layer (or a circuit layer) made of a metal material or the like in addition to the semiconductor layer. The device layer may constitute a MEMS (Micro Electro Mechanical System).

[0035] -Resin film forming equipment- As shown in FIG. 3, a resin film forming apparatus 30 of this embodiment includes a holding stage 31, a nozzle 32, and a nozzle cover 33.

[0036] The holding stage 31 is a plate-like member arranged substantially horizontally. The holding stage 31 may be, for example, disk-shaped. The holding stage 31 holds the substrate 1 and the transport carrier 10 (the transport carrier 10 is not shown) with the first main surface 1X facing downward. The holding stage 31 may hold the substrate 1 and the transport carrier 10 by, for example, vacuum suction. The holding stage 31 is an example of a holder.

[0037] The holding stage 31 is rotatable around its axis. In this example, the axis of the holding stage 31 coincides with a vertical line, but is not limited to this. For this reason, the resin film forming apparatus 30 includes a rotation mechanism (not shown) that rotates the holding stage 31. The rotation speed of the holding stage 31 may be, for example, 40 to 80 rpm.

[0038] The nozzle 32 forms a resin film RF on the first main surface 1X of the substrate 1. More specifically, the nozzle 32 forms the resin film RF on the first main surface 1X so that the thickness of the resin film RF covering the element region EA is greater than the thickness of the resin film RF covering the bottom 11a of the groove 11. The nozzle 32 is disposed with its nozzle facing obliquely upward. The nozzle 32 sprays the raw material liquid RM of the resin film RF toward the first main surface 1X of the substrate 1 held by the holding stage 31. The nozzle 32 sprays the raw material liquid RM while moving in the horizontal direction in order to spray the raw material liquid RM over the entire first main surface 1X of the substrate 1. For this purpose, the resin film forming device 30 includes a moving mechanism (not shown) for moving the nozzle 32.

[0039] The distance between the ejection port of the nozzle 32 and the first main surface 1X of the substrate 1 may be, for example, 20 to 100 mm. This distance is selected from the viewpoint of favorably forming the resin film RF.

[0040] The raw material liquid RM of the resin film RF may contain, for example, a resin material and a solvent that dissolves the resin material. The resin material may be any material that is used as a resist material, and examples of the resin material include thermosetting resins such as polyimide, phenolic resins, and acrylic resins. The solvent contained in the raw material liquid RM may be water, an organic solvent, or a mixture of water and an organic solvent. The solvent contained in the raw material liquid RM may be one that is mostly volatilized or evaporated during spraying from the nozzle 32. Examples of highly volatile solvents include methyl ethyl ketone and propylene glycol monomethyl ether acetate.

[0041] The nozzle cover 33 is a plate-like member in which an opening 34 is formed. The opening 34 may be, for example, circular, but is not limited to this. The nozzle cover 33 is disposed between the holding stage 31 and the nozzle 32. The nozzle cover 33 may be movable in the horizontal direction together with the nozzle 32 so that the positional relationship between the injection port of the nozzle 32 and the opening 34 is substantially constant.

[0042] -Resin film formation method- The resin film forming method is carried out using the above-mentioned resin film forming apparatus 30. The resin film forming method includes a preparation step and a spraying step.

[0043] In the preparation step, the above-mentioned substrate 1 is prepared. The substrate 1 may be prepared in a state where it is held by a transport carrier 10.

[0044] In the spraying step, as shown in Fig. 3 and Fig. 4, a raw material solution RM of the resin film RF is sprayed from a nozzle 32 toward the first main surface 1X of the substrate 1 arranged with the first main surface 1X facing downward. As a result, as shown in Fig. 5, a resin film RF is formed on the first main surface 1X so that the thickness of the resin film RF covering the element region EA is greater than the thickness of the resin film RF covering the bottom 11a of the groove 11. The thickness of the resin film RF decreases in the order of the surface of the element region EA, the side wall of the groove 11, and the bottom 11a of the groove 11. Note that, although Fig. 5 illustrates the resin film RF not being present on the bottom 11a of the groove 11, a resin film RF thinner than the resin film RF covering the element region EA may be formed on the bottom 11a of the groove 11.

[0045] In the spraying step, the nozzle 32 sprays the raw material liquid RM from a direction different from the normal direction to the first main surface 1X of the substrate 1. Here, the angle between the direction in which the nozzle 32 sprays the raw material liquid RM and the normal direction to the first main surface 1X is θ (see FIG. 4), and the aspect ratio of the groove 11 is X, so that arctan(1 / X)<θ may hold. For example, when the depth of the groove 11 is 100 μm, the opening width of the groove 11 is 20 μm, and the aspect ratio is 5 (X=5), the angle θ may be greater than approximately 11.3° (θ>11.3°).

[0046] In the spraying step, the raw material liquid RM may be sprayed while rotating the holding stage 31. In other words, the raw material liquid RM may be sprayed by the nozzle 32 while rotating the substrate 1 relative to the nozzle 32. Although not shown in the drawings, as long as the substrate 1 and the nozzle 32 rotate relatively to each other, only the nozzle 32 may be rotated, or both the substrate 1 and the nozzle 32 may be rotated.

[0047] In the spraying step, the nozzle 32 may spray the raw material liquid RM through the opening 34 of the nozzle cover 33, with the nozzle cover 33 being disposed between the nozzle 32 and the substrate 1. Here, a part of the raw material liquid RM sprayed from the nozzle 32 may be blocked by the nozzle cover 33. In this case, the raw material liquid RM that tends to flow in a direction that forms an angle with the normal direction of the first main surface 1X of the substrate 1 smaller than arctan(1 / X) may be blocked.

[0048] -Method of manufacturing element chips- The manufacturing method of the element chip includes a plasma dicing process in addition to the steps of the resin film forming method described above. Here, the plasma processing device 100 used in the plasma dicing process will be specifically described with reference to Fig. 6. However, the plasma processing device is not limited to this.

[0049] The plasma processing apparatus 100 includes a stage 111. The substrate 1 is placed on the stage 111 together with a transport carrier 10 supporting the substrate 1 such that the first main surface 1X faces upward. Here, the transport carrier 10 includes a holding sheet 3 that holds the substrate 1 from the second main surface 1Y side, and a frame 2 to which the holding sheet 3 is fixed. The stage 111 is large enough to accommodate the entire transport carrier 10.

[0050] A cover 124 is disposed above the stage 111, the cover 124 covering at least a portion of the frame 2 and the holding sheet 3 and having a window portion 124W exposing at least a portion of the substrate 1. A pressing member 107 is disposed on the cover 124 for pressing the frame 2 when the frame 2 is placed on the stage 111.

[0051] The stage 111 and the cover 124 are disposed in the vacuum chamber 103. The vacuum chamber 103 is generally cylindrical with an open top. The open top is closed by a dielectric member 108, which is a lid. Examples of materials constituting the vacuum chamber 103 include aluminum, stainless steel (SUS), and aluminum with an anodized surface. Examples of materials constituting the dielectric member 108 include dielectric materials such as yttrium oxide (Y2O3), aluminum nitride (AlN), alumina (Al2O3), and quartz (SiO2). A first electrode 109 is disposed above the dielectric member 108 as an upper electrode. The first electrode 109 is electrically connected to a first high frequency power supply 110A. The stage 111 is disposed on the bottom side of the vacuum chamber 103.

[0052] The vacuum chamber 103 is provided with a gas inlet 103a. A process gas source 112 and an ashing gas source 113, which are supply sources of gas for generating plasma, are connected to the gas inlet 103a by piping. The vacuum chamber 103 is also provided with an exhaust port 103b. A decompression mechanism 114 including a vacuum pump for exhausting gas in the vacuum chamber 103 and reducing the pressure is connected to the exhaust port 103b. With the process gas being supplied into the vacuum chamber 103, high frequency power is supplied from the first high frequency power supply 110A to the first electrode 109, whereby plasma is generated in the vacuum chamber 103.

[0053] The stage 111 includes an electrode layer 115 and a metal layer 116, each of which is substantially circular, a base 117 that supports the electrode layer 115 and the metal layer 116, and an outer periphery 118 that surrounds the electrode layer 115, the metal layer 116, and the base 117. The outer periphery 118 is made of a metal that is conductive and resistant to etching, and protects the electrode layer 115, the metal layer 116, and the base 117 from plasma. An annular outer periphery ring 129 is disposed on the upper surface of the outer periphery 118. The outer periphery ring 129 serves to protect the upper surface of the outer periphery 118 from plasma. The electrode layer 115 and the outer periphery ring 129 are made of, for example, the above-mentioned dielectric materials.

[0054] An electrode for electrostatic chuck (hereinafter referred to as ESC electrode 119) and a second electrode 120 electrically connected to a second high frequency power supply 110B are arranged inside the electrode layer 115. A DC power supply 126 is electrically connected to the ESC electrode 119. The ESC electrode 119 and the DC power supply 126 configure an electrostatic chuck mechanism. The holding sheet 3 is pressed against and fixed to the stage 111 by the electrostatic chuck mechanism. The following description will be given taking as an example a case where an electrostatic chuck mechanism is provided as a fixing mechanism for fixing the holding sheet 3 to the stage 111, but is not limited to this. The holding sheet 3 may be fixed to the stage 111 by a clamp (not shown).

[0055] The metal layer 116 is made of, for example, aluminum with an alumite coating formed on the surface. A coolant flow path 127 is formed in the metal layer 116. The stage 111 is cooled by the coolant flowing through the coolant flow path 127. By cooling the stage 111, the holding sheet 3 mounted on the stage 111 is cooled, and the cover 124, a part of which is in contact with the stage 111, is also cooled. This prevents the substrate 1 and the holding sheet 3 from being damaged due to overheating during plasma processing. The coolant in the coolant flow path 127 is circulated by a coolant circulation device 125.

[0056] A plurality of supports 122 penetrating the stage 111 are arranged near the outer periphery of the stage 111. The supports 122 support the frame 2 of the transport carrier 10. The supports 122 are driven to move up and down by a lifting mechanism 123A. When the transport carrier 10 is transported into the vacuum chamber 103, it is handed over to the supports 122 that have risen to a predetermined position. When the upper end surface of the supports 122 is lowered to the same level as the stage 111 or lower, the transport carrier 10 is placed at a predetermined position on the stage 111.

[0057] A plurality of lifting rods 121 that enable the cover 124 to be raised and lowered are connected to the end of the cover 124. The lifting rods 121 are driven to be raised and lowered by a lifting mechanism 123B. The operation of lifting and lowering the cover 124 by the lifting mechanism 123B can be performed independently of the lifting mechanism 123A.

[0058] The control device 128 controls the operations of the components of the plasma processing device 100, including the first high frequency power supply 110A, the second high frequency power supply 110B, the process gas source 112, the ashing gas source 113, the pressure reducing mechanism 114, the coolant circulating device 125, the lifting mechanism 123A, the lifting mechanism 123B, and the electrostatic adsorption mechanism. The control device 128 includes a calculation device and a storage device in which a program executable by the calculation device is stored.

[0059] In the plasma dicing process, the division regions DA are etched with plasma using the resin film RF formed in the spray process as a mask.

[0060] In the plasma dicing process, the substrate 1 is excavated by repeating an etching step for etching the substrate 1, a deposition step for depositing a protective film, and a protective film removal step for removing at least a portion of the protective film (e.g., the portion of the protective film deposited on the bottom 11a of the groove 11).

[0061] The etching step is performed under the following processing conditions: while supplying SF6 as a source gas at 200 to 400 sccm, the pressure inside the vacuum chamber 103 is adjusted to 5 to 25 Pa, the power applied from the first high frequency power supply 110A to the first electrode 109 is 1500 to 5000 W, the power applied from the second high frequency power supply 110B to the second electrode 120 is 20 to 500 W, and the etching time is 8 to 15 seconds.

[0062] The deposition step is performed under the following processing conditions: while supplying C4F8 as a source gas at 150 to 250 sccm, the pressure inside the vacuum chamber 103 is adjusted to 15 to 25 Pa, the power applied from the first high frequency power supply 110A to the first electrode 109 is 1500 to 5000 W, the power applied from the second high frequency power supply 110B to the second electrode 120 is 0 to 50 W, and the deposition time is 2 to 10 seconds.

[0063] In the protective film removing step, the power applied to the second electrode 120 is set to be greater than that in the etching step. This enables anisotropic etching. The protective film removing step is performed under the following processing conditions: while supplying SF6 as a source gas at 200 to 400 sccm, the pressure inside the vacuum chamber 103 is adjusted to 5 to 25 Pa, the power applied from the first high frequency power supply 110A to the first electrode 109 is 1500 to 5000 W, the power applied from the second high frequency power supply 110B to the second electrode 120 is 80 to 800 W, and the processing time is 2 to 5 seconds.

[0064] 7, the substrate 1 is divided into a plurality of element chips 20. Thereafter, the resin film RF may be removed by a known method. For example, when the resin film RF is a resist mask, the resin film RF may be removed by ashing.

[0065] Variation of the First Embodiment A description will be given of a modification of the embodiment 1. In this modification, a plasma processing apparatus 100 is used to perform an etching process instead of the plasma dicing process.

[0066] In the etching process, the dividing region is etched with plasma using the resin film RF formed in the spray process as a mask. This makes the grooves 11 in the dividing region DA deep. The etching may be performed using a Bosch process or a non-Bosch process.

[0067] Second Embodiment A second embodiment will be described. This embodiment differs from the first embodiment in the configuration of the resin film forming apparatus 30. The following mainly describes the differences from the first embodiment.

[0068] As shown in Fig. 8, in the resin film forming apparatus 30 of this embodiment, the holding stage 31 is arranged at an incline with respect to the horizontal plane, and the nozzle 32 is arranged so that the spray direction is vertically upward. The holding stage 31 is rotatable about its axis. The axis of the holding stage 31 is inclined with respect to the vertical line. The nozzle 32 is configured to spray the raw material liquid RM of the resin film RF while moving in the horizontal direction. 《Reference example》 A resin film forming apparatus of a reference example will be described. Although not shown in the drawings, the resin film forming apparatus of the reference example includes a holding stage that holds the substrate 1 with the first main surface 1X of the substrate 1 facing upward, and a nozzle that sprays a raw material solution RM of the resin film RF toward the first main surface 1X of the substrate 1 held by the holding stage to form the resin film RF on the first main surface 1X so that the film thickness covering the element region EA is larger than the film thickness covering the bottom 11a of the groove 11. [Industrial Applicability]

[0069] The present disclosure can be used in a substrate processing method, a manufacturing method for a component chip, a resin film forming method, and a resin film forming apparatus. [Explanation of symbols]

[0070] 1: Substrate 1X: 1st main surface 1Y: Second main surface 11: Groove 11a: Bottom 10: Transport carrier 2: Frame 2a:Notch 2b: Corner cut 3: Retaining sheet 3X: Adhesive surface 20: Element chip 30:Resin film forming device 31: Holding stage (holding part) 32: Nozzle 33: Nozzle cover 34:Aperture 100: Plasma processing device 103: Vacuum chamber 103a: Gas inlet 103b: Exhaust port 107: Clamping member 108: Dielectric member 109: 1st electrode 110A: 1st high frequency power supply 110B: 2nd high frequency power supply 111: Stage 112: Process gas source 113: Ashing gas source 114: Pressure reduction mechanism 115: Electrode layer 116: Metal layer 117: Foundation 118: Outer periphery 119:ESC electrode 120: 2nd electrode 121: Lifting rod 122: Support part 123A, 123B: Lifting mechanism 124: Cover 124W: Window section 125: Refrigerant circulation device 126:DC power supply 127: Coolant flow path 128: Control device 129: Outer ring DA:Divided area EA: Element area RF: Resin membrane RM: Raw material liquid

Claims

1. a preparation step of preparing a substrate having a first main surface and a second main surface opposite to the first main surface, the substrate having an element region and a dividing region having a groove surrounding the element region on the first main surface; a spraying step of spraying a resin film material solution from a nozzle toward the first main surface of the substrate, the first main surface of which is disposed with the first main surface facing downward, to form a resin film on the first main surface such that a film thickness covering the element region is greater than a film thickness covering a bottom of the groove; an etching step of etching the dividing region with plasma using the resin film as a mask; A substrate processing method comprising:

2. The substrate processing method according to claim 1 , wherein in the spraying step, the nozzle sprays the source liquid in a direction different from a normal direction of the first main surface.

3. 3. The substrate processing method according to claim 2, wherein, in the spraying step, an angle between a direction in which the raw material liquid is sprayed by the nozzle and a normal direction to the first main surface is θ, and an aspect ratio of the groove is X, and arctan(1 / X)<θ holds.

4. 4. The substrate processing method according to claim 1, wherein in the spraying step, the nozzle sprays the source liquid while rotating the substrate relative to the nozzle.

5. 5. The substrate processing method according to claim 1, wherein in the spraying step, a nozzle cover having an opening is disposed between the nozzle and the substrate, and the raw material liquid is sprayed by the nozzle through the opening.

6. The substrate processing method according to claim 5 , wherein in the spraying step, a part of the raw material liquid sprayed from the nozzle is blocked by the nozzle cover.

7. a preparation step of preparing a substrate having a first main surface and a second main surface opposite to the first main surface, the substrate having an element region and a dividing region having a groove surrounding the element region on the first main surface; a spraying step of spraying a resin film material solution from a nozzle toward the first main surface of the substrate, the first main surface of which is disposed with the first main surface facing downward, to form a resin film on the first main surface such that a film thickness covering the element region is greater than a film thickness covering a bottom of the groove; a plasma dicing process for dividing the substrate into a plurality of element chips by etching the dividing region with plasma using the resin film as a mask; A method for manufacturing an element chip comprising the steps of:

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