Substrate processing apparatus, semiconductor device manufacturing method and program

Abstract

Provided is a technical configuration comprising a reaction chamber for processing a substrate, a microwave oscillator for supplying a microwave to a processing chamber, and a control unit configured to be able to control the microwave oscillator so as to perform: a heating process in which the microwave, while being maintained at a first microwave output, is supplied to the substrate to heat the same by repeating, a predetermined number of times or for a first predetermined time, a supply time for supplying a first microwave and a stopping time shorter than the supply time for stopping the first microwave; and a reforming process in which the microwave, while being maintained at a second microwave output higher than the first microwave output, is supplied to the substrate for a second predetermined time to reform the same.

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. [Background technology]

[0002] As one step in the manufacturing process of semiconductor devices, for example, a modification process represented by an annealing process is performed by heating a substrate in a processing chamber using a heating device to change the composition or crystal structure in a thin film formed on the surface of the substrate, or to repair crystal defects in the thin film. In recent years, semiconductor devices have become significantly finer and more highly integrated, and this has led to a demand for modification processes for high-density substrates on which patterns with high aspect ratios are formed. As a method for modifying such high-density substrates, a heat treatment method using electromagnetic waves as shown in Patent Document 1, for example, has been considered. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-070045 A Summary of the Invention [Problem to be solved by the invention]

[0004] In conventional processes using electromagnetic waves, unevenness in the temperature across the surface of a semiconductor substrate due to heat treatment can cause the substrate to warp or crack.

[0005] An object of the present disclosure is to provide a technique that makes it possible to prevent warping and cracking of a substrate due to heat treatment.

[0006] In order to achieve the above object, according to one aspect of the present disclosure, there is provided a technology including a processing chamber for processing a substrate, a microwave oscillator for supplying microwaves to the processing chamber, and a control unit configured to be capable of controlling the microwave oscillator to perform a heating process in which microwaves are supplied to the substrate for a predetermined number of times or for a predetermined period of time while maintaining the microwaves at a first microwave output, with a supply period during which microwaves are supplied and a stop period during which the microwaves are stopped that is shorter than the supply period, repeated to heat the substrate, and a modification process in which microwaves are supplied to the substrate for a predetermined period of time while maintaining the microwaves at a second microwave output that is higher than the first microwave output, to modify the substrate. Effect of the Invention

[0007] According to the present disclosure, it is possible to prevent warping and cracking of a substrate due to heat treatment. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic configuration diagram showing, in vertical cross section, a processing furnace portion of a substrate processing apparatus according to an embodiment of the present disclosure; [Diagram 2] 1 is a longitudinal sectional view showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present disclosure, at the position of a processing furnace; [Diagram 3] 1 is a transverse cross-sectional view showing a cross-sectional configuration of a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 4] FIG. 2 is a schematic configuration diagram of a controller of the substrate processing apparatus according to an embodiment of the present disclosure. [Diagram 5] FIG. 1 is a diagram showing an example of a flow of a substrate processing according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] An embodiment of the present disclosure will be described below with reference to the drawings. This embodiment is an embodiment of a substrate processing apparatus including a processing chamber for processing a substrate, a microwave oscillator for supplying microwaves to the processing chamber, and a controller capable of controlling the microwave oscillator to perform a heating process in which a substrate is heated by supplying microwaves to the processing chamber for a predetermined number of times or for a predetermined period of time while maintaining the microwaves at a first microwave output, and a modification process in which a substrate is modified by supplying microwaves to the substrate for a predetermined period of time while maintaining the microwaves at a second microwave output higher than the first microwave output.

[0010] (1) Configuration of the Substrate Processing Apparatus The substrate processing apparatus in this embodiment is configured as a single-wafer heat processing apparatus that performs various heat treatments on one or more wafers, and will be described as an apparatus that performs an annealing process (modification process) using electromagnetic waves, which will be described later. In the substrate processing apparatus in this embodiment, a FOUP (Front Opening Unified Pod: hereinafter referred to as a pod) is used as a storage container (carrier) that contains wafers as substrates inside a processing chamber. The pod is also used as a transport container for transporting wafers between various substrate processing apparatuses.

[0011] 1, 2 and 3, the substrate processing apparatus 100 includes a transfer housing 202 having therein a transfer chamber 203 for transferring a wafer 200, and cases 102-1 and 102-2, which are processing containers described below and are provided on side walls of the transfer housing 202 and have therein processing chambers 201-1 and 201-2, respectively, for processing the wafer 200. In addition, a cooling case 109 forming a cooling chamber 204 is provided between the processing chambers 201-1 and 201-2.

[0012] 2 (lower side in FIG. 3), which is the front side of the transfer housing 202, a load port unit (LP) 106 is disposed as a pod opening / closing mechanism for opening and closing the cover of the pod 110 and loading / unloading the wafer 200 into / from the transfer chamber 203. The load port unit 106 includes a housing 106a, a stage 106b, and an opener 106c. The stage 106b is configured to place the pod 110 thereon and bring the pod 110 close to a substrate loading / unloading port 134 formed in the front of the housing of the transfer chamber 203, and the opener 106c opens and closes a cover (not shown) provided on the pod 110. The load port unit 106 may also have a function capable of purging the inside of the pod 110 with a purge gas such as N2 gas. The transfer housing 202 also has a purge gas circulation structure (described later) for circulating a purge gas such as N2 inside the transfer chamber 203.

[0013] Gate valves (GV) 205-1 and 205-2 for opening and closing the processing chambers 201-1 and 201-2 are disposed on the left side of FIG. 2 (upper side of FIG. 3) which is the rear side of the transfer housing 202. A substrate transfer robot which is a substrate transfer mechanism for transferring the wafer 200, and a transfer machine 125 as a substrate transfer unit are disposed in the transfer chamber 203. The transfer machine 125 is composed of tweezers (arms) 125a-1 and 125a-2 as a placement unit for placing the wafer 200, a transfer device 125b which can rotate or linearly move each of the tweezers 125a-1 and 125a-2 in the horizontal direction, and a transfer device elevator 125c which raises and lowers the transfer device 125b. By successive operations of the tweezers 125a-1, 125a-2, the transfer device 125b, and the transfer device elevator 125c, the wafers 200 can be charged or discharged to or from the substrate holder (substrate holder) 217, the cooling chamber 204, and the pod 110, which will be described later. Hereinafter, the cases 102-1, 102-2, the processing chambers 201-1, 201-2, and the tweezers 125a-1 and 125a-2 will be simply referred to as the case 102, the processing chamber 201, and the tweezers 125a, respectively, unless there is a need to distinguish between them.

[0014] The tweezers 125a-1 are made of normal aluminum material and are used to transport low-temperature and room-temperature wafers. The tweezers 125a-2 are made of a material such as alumina or quartz, which has high heat resistance and poor thermal conductivity, and are used to transport high-temperature and room-temperature wafers. That is, the tweezers 125a-1 are low-temperature substrate transport parts, and the tweezers 125a-2 are high-temperature substrate transport parts. The high-temperature tweezers 125a-2 are preferably configured to have a heat resistance of, for example, 100°C or higher, more preferably 200°C or higher. A mapping sensor can be installed on the low-temperature tweezers 125a-1. By providing a mapping sensor on the low-temperature tweezers 125a-1, it becomes possible to check the number of wafers 200 in the load port unit 106, the number of wafers 200 in the reaction chamber 201, and the number of wafers 200 in the cooling chamber 204.

[0015] In the substrate processing apparatus of this embodiment, the tweezers 125a-1 are low-temperature tweezers, and the tweezers 125a-2 are high-temperature tweezers, but the present invention is not limited to this. The tweezers 125a-1 may be made of a material such as alumina or quartz that has high heat resistance and low thermal conductivity, and used to transport high-temperature and room-temperature wafers, and the tweezers 125a-2 may be made of a normal aluminum material, and used to transport low-temperature and room-temperature wafers. In addition, both the tweezers 125a-1 and 125a-2 may be made of a material such as alumina or quartz that has high heat resistance and low thermal conductivity.

[0016] (Processing Furnace) In an area A surrounded by a dashed line in Fig. 2, a processing furnace (processing chamber) 201 having a substrate processing structure as shown in Fig. 1 is configured. As shown in Fig. 3, in this embodiment, a plurality of processing furnaces are provided, but since the processing furnaces have the same configuration, only the configuration of one of them will be described, and the description of the configuration of the other processing furnace will be omitted.

[0017] As shown in FIG. 1, the processing furnace has a case 102 as a cavity (processing vessel) made of a material that reflects electromagnetic waves, such as metal. A cap flange (closing plate) 104 made of a metal material is configured to close the upper end of the case 102 via an O-ring as a sealing member (not shown). The inner space of the case 102 and the cap flange 104 is mainly configured as a processing chamber 201 for processing substrates such as silicon wafers. A reaction tube (not shown) made of quartz that transmits electromagnetic waves may be installed inside the case 102, or the processing vessel may be configured so that the inside of the reaction tube serves as the processing chamber. Alternatively, the processing chamber 201 may be configured using the case 102 with a closed ceiling without providing the cap flange 104.

[0018] A mounting table 210 is provided in the processing chamber 201, and a boat 217 is mounted on the upper surface of the mounting table 210 as a substrate holder for holding a wafer 200 as a substrate. The boat 217 holds the wafer 200 to be processed and susceptors 103a and 103b mounted above and below the wafer 200 in the vertical direction so as to sandwich the wafer 200 at a predetermined interval. The susceptors 103a and 103b are made of, for example, silicon plates (Si plates) or silicon carbide plates (SiC plates) and are disposed above and below the wafer 200 to suppress concentration of electric field intensity at the edge of the wafer 200. That is, the susceptor suppresses absorption of electromagnetic waves by the edge of the wafer. Quartz plates 101a and 101b as heat insulating plates may be held at a predetermined interval on the upper and lower surfaces of the susceptors 103a and 103b. In this embodiment, the quartz plates 101a and 101b and the susceptors 103a and 103b are each composed of the same parts, and hereinafter, unless there is a need to distinguish between them, they will be referred to as the quartz plate 101 and the susceptor 103.

[0019] The case 102 as a processing vessel is, for example, circular in cross section and configured as a flat sealed vessel. The transport housing 202 as a lower vessel is, for example, configured of a metal material such as aluminum (Al) or stainless steel (SUS), or quartz. The space surrounded by the case 102 may be referred to as a processing chamber 201 or a reaction area 201 as a processing space, and the space surrounded by the transport housing 202 may be referred to as a transport chamber or a transport area 203 as a transport space. The processing chamber 201 and the transport chamber 203 are not limited to being configured adjacent to each other in the horizontal direction as in this embodiment, but may be configured adjacent to each other in the vertical direction and a substrate holder having a predetermined structure may be raised and lowered.

[0020] 1, 2 and 3, a substrate loading / unloading port 206 adjacent to a gate valve 205 is provided on the side of the transfer housing 202, and the wafer 200 moves between the processing chamber 201 and the transfer chamber 203 through the substrate loading / unloading port 206. A choke structure having a length of ¼ wavelength of the electromagnetic wave used is provided around the gate valve 205 or the substrate loading / unloading port 206 as a measure against leakage of the electromagnetic wave, which will be described later.

[0021] An electromagnetic wave supply unit serving as a heating device, which will be described in detail later, is installed on the side of the case 102, and electromagnetic waves such as microwaves supplied from the electromagnetic wave supply unit are introduced into the processing chamber 201 to heat the wafers 200, etc., and process the wafers 200.

[0022] The mounting table 210 is supported by a shaft 255 serving as a rotation axis. The shaft 255 penetrates the bottom of the processing chamber 201, and is further connected to a driving mechanism 267 that performs a rotation operation outside the processing chamber 201. By operating the driving mechanism 267 to rotate the shaft 255 and the mounting table 210, it is possible to rotate the wafer 200 mounted on the boat 217. The periphery of the lower end of the shaft 255 is covered with a bellows 212, and the processing chamber 201 and the transfer area 203 are kept airtight.

[0023] Here, the mounting table 210 may be configured such that, depending on the height of the substrate loading / unloading port 206, the driving mechanism 267 raises or lowers the wafer 200 to a wafer transport position when the wafer 200 is being transported, and raises or lowers the wafer 200 to a processing position (wafer processing position) within the processing chamber 201 when the wafer 200 is being processed.

[0024] An exhaust unit that exhausts the atmosphere in the processing chamber 201 is provided below the processing chamber 201 and on the outer periphery of the mounting table 210. As shown in Fig. 1, the exhaust unit is provided with an exhaust port 221. An exhaust pipe 231 is connected to the exhaust port 221, and a pressure regulator 244 such as an APC valve that controls the valve opening depending on the pressure inside the processing chamber 201, and a vacuum pump 246 are connected in series to the exhaust pipe 231 in this order.

[0025] Here, the pressure regulator 244 is not limited to an APC valve, so long as it is capable of receiving pressure information within the processing chamber 201 and a feedback signal from a pressure sensor 245 described later and adjusting the exhaust volume, it may be configured to use a normal opening / closing valve in combination with a pressure regulating valve.

[0026] An exhaust section (also referred to as an exhaust system or an exhaust line) is mainly composed of the exhaust port 221, the exhaust pipe 231, and the pressure regulator 244. Note that exhaust ports may be provided to surround the mounting table 210, allowing gas to be exhausted from the entire circumference of the wafer 200. A vacuum pump 246 may also be added to the exhaust section.

[0027] The cap flange 104 is provided with a gas supply pipe 232 for supplying various processing gases for substrate processing, such as an inert gas, a raw material gas, and a reaction gas, into the processing chamber 201. The gas supply pipe 232 is provided with a mass flow controller (MFC) 241, which is a flow rate controller (flow rate control section), and a valve 243, which is an on-off valve, in this order from upstream. A nitrogen (N2) gas source, which is an inert gas, is connected to the upstream side of the gas supply pipe 232, and the gas is supplied into the processing chamber 201 via the MFC 241 and the valve 243. When multiple types of gases are used during substrate processing, multiple types of gases can be supplied by using a configuration in which a gas supply pipe provided with an MFC, which is a flow rate controller, and a valve, which is an on-off valve, in this order from the upstream side is connected downstream of the valve 243 of the gas supply pipe 232. A gas supply pipe provided with an MFC and a valve for each type of gas may be installed.

[0028] A gas supply system (gas supply unit) is mainly composed of the gas supply pipe 232, the MFC 241, and the valve 243. When an inert gas flows in the gas supply system, it is also called an inert gas supply system. As the inert gas, in addition to N2 gas, for example, rare gases such as Ar gas, He gas, Ne gas, and Xe gas can be used.

[0029] The cap flange 104 is provided with a temperature sensor 263 as a non-contact temperature measuring device. The output of a microwave oscillator 655 (described later) is adjusted based on temperature information detected by the temperature sensor 263 to heat the substrate, and the substrate temperature has a desired temperature distribution. The temperature sensor 263 is, for example, a radiation thermometer such as an IR (Infrared Radiation) sensor. The temperature sensor 263 is provided to measure the surface temperature of the quartz plate 101a or the surface temperature of the wafer 200. If a susceptor is provided as the heating element described above, the temperature sensor 263 may be configured to measure the surface temperature of the susceptor. In this embodiment, the temperature of the wafer 200 (wafer temperature) may refer to the wafer temperature converted by temperature conversion data (described later), that is, the estimated wafer temperature, the temperature obtained by directly measuring the temperature of the wafer 200 by the temperature sensor 263, or both of them.

[0030] Temperature conversion data indicating a correlation between the temperatures of the quartz plate 101 or the susceptor 103, and the wafer 200 may be stored in the storage device 121c or the external storage device 123 by acquiring in advance the transition of temperature changes for each of the quartz plate 101 or the susceptor 103, and the wafer 200 by the temperature sensor 263. By creating the temperature conversion data in advance in this manner, the temperature of the wafer 200 can be estimated by measuring only the temperature of the quartz plate 101, and the output of the microwave oscillator 655, i.e., the heating device, can be controlled based on the estimated temperature of the wafer 200.

[0031] The means for measuring the temperature of the substrate is not limited to the radiation thermometer described above, and may be a thermocouple, or a thermocouple and a non-contact thermometer may be used in combination. However, when the temperature is measured using a thermocouple, the thermocouple must be placed near the wafer 200. That is, since the thermocouple must be placed in the processing chamber 201, the thermocouple itself is heated by microwaves supplied from a microwave oscillator (described later), and therefore the temperature cannot be measured accurately. Therefore, it is preferable to use a non-contact thermometer as the temperature sensor 263.

[0032] Furthermore, the temperature sensor 263 is not limited to being provided on the cap flange 104, but may be provided on the mounting base 210. The temperature sensor 263 may not only be directly provided on the cap flange 104 or the mounting base 210, but may also be configured to indirectly measure by reflecting radiation from a measurement window provided on the cap flange 104 or the mounting base 210 with a mirror or the like. Furthermore, the number of temperature sensors 263 provided is not limited to one, but multiple sensors may be provided.

[0033] Electromagnetic wave introduction ports 653-1 and 653-2 are provided on the side wall of the case 102. One end of each of waveguides 654-1 and 654-2 for supplying electromagnetic waves (microwaves) into the processing chamber 201 is connected to each of the electromagnetic wave introduction ports 653-1 and 653-2. Microwave oscillators (electromagnetic wave sources) 655-1 and 655-2 are connected to the other end of each of the waveguides 654-1 and 654-2 as heating sources for supplying electromagnetic waves into the processing chamber 201 to heat the inside of the processing chamber 201. The microwave oscillators 655-1 and 655-2 supply electromagnetic waves such as microwaves to the waveguides 654-1 and 654-2, respectively. In addition, magnetrons, klystrons, or the like are used as the microwave oscillators 655-1 and 655-2. Hereinafter, unless there is a need to distinguish between the electromagnetic wave introduction ports 653-1, 653-2, the waveguides 654-1, 654-2, and the microwave oscillators 655-1, 655-2, they will be referred to as the electromagnetic wave introduction port 653, the waveguide 654, and the microwave oscillator 655.

[0034] The frequency of the electromagnetic waves generated by the microwave oscillator 655 is preferably controlled to be in the frequency range of 13.56 MHz to 24.125 GHz. More preferably, it is preferably controlled to be 2.45 GHz or 5.8 GHz. Here, the frequencies of the microwave oscillators 655-1 and 655-2 may be the same or different.

[0035] In addition, in this embodiment, two microwave oscillators 655 are described as being arranged on the side surface of case 102, but this is not limiting, and one or more may be provided, and the microwave oscillators may be arranged so as to be arranged on different side surfaces, such as opposing side surfaces, of case 102. An electromagnetic wave supplying unit (also referred to as an electromagnetic wave supplying unit, a microwave supplying unit, or a microwave supplying unit) serving as a heating device is mainly configured by microwave oscillators 655-1, 655-2, waveguides 654-1, 654-2, and electromagnetic wave introduction ports 653-1, 653-2.

[0036] The microwave oscillators 655-1 and 655-2 are each connected to a controller 121, which will be described later. The controller 121 is connected to a temperature sensor 263 that measures the temperature of the quartz plate 101a or 101b or the wafer 200 housed in the processing chamber 201. The temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 by the above-mentioned method and transmits it to the controller 121, and the controller 121 controls the output of the microwave oscillators 655-1 and 655-2 to control the heating of the wafer 200. As a method for controlling the heating by the heating device, a method of controlling the heating of the wafer 200 by controlling the voltage input to the microwave oscillator 655, and a method of controlling the heating of the wafer 200 by changing the ratio of the time when the microwave oscillator 655 is turned on and the time when it is turned off can be used.

[0037] Here, the microwave oscillators 655-1 and 655-2 are controlled by the same control signal transmitted from the controller 121. However, this is not limiting, and the microwave oscillators 655-1 and 655-2 may be configured to be individually controlled by transmitting individual control signals from the controller 121 to the microwave oscillators 655-1 and 655-2, respectively.

[0038] (Control device) As shown in Fig. 4, the controller 121, which is a control unit (control device, control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122 configured as, for example, a touch panel, is connected to the controller 121.

[0039] The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing apparatus, a process recipe describing the procedure and conditions of an annealing (modification) process, etc. are readably stored in the storage device 121c. The process recipe is a combination of procedures in a substrate processing step described later that are executed by the controller 121 to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, the control program, etc. are collectively referred to simply as a program. The process recipe is also simply referred to as a recipe.

[0040] In this specification, when the word "program" is used, it may include only a recipe, only a control program, or both. The RAM 121b is configured as a memory area (work area) in which programs and data read by the CPU 121a are temporarily stored.

[0041] The I / O port 121d is connected to the above-mentioned transfer machine 125, the MFC 241, the valve 243, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the temperature sensor 263, the drive mechanism 267, the microwave oscillator 655, and the like.

[0042] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122, etc. The CPU 121a is configured to be capable of controlling the transfer operation of the substrate by the transfer machine, the flow rate adjustment operation of various gases by the MFC 241, the opening and closing operation of the valve 243, the pressure adjustment operation by the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, the output adjustment operation of the microwave oscillator 655 based on the temperature sensor 263, the rotation and rotation speed adjustment operation of the mounting table 210 (or the boat 217) by the drive mechanism 267, or the lifting and lowering operation, etc., in accordance with the contents of the read recipe.

[0043] The controller 121 can be configured by installing the above-mentioned program stored in an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 123 into a computer. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. When the term recording media is used in this specification, it may include only the storage device 121c alone, only the external storage device 123 alone, or both. The program may be provided to the computer using a communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0044] This embodiment was able to suppress wafer deformation caused by cyclic microwave irradiation. That is, by applying a stepped output of 3200 W during preheating, the amount of wafer deformation was suppressed to within 5 mm. Here, the stepped output means that preheating was performed for 14 cycles (total: 140 seconds) with 3200 W on for 8 seconds and off for 2 seconds (0 W). Due to the stepped output, the temperature at the susceptor edge also drops. After that, the substrate temperature rises to about 600°C by applying microwaves at 6 kW for 150 seconds. The maximum deformation of the Si wafer at this time was suppressed to within 5 mm.

[0045] An example of a substrate processing flow according to this embodiment is shown in Fig. 5. Here, an example of a method for modifying (crystallizing) an amorphous silicon film as a silicon-containing film formed on a substrate, for example, as one step in a manufacturing process of a semiconductor device using the above-mentioned substrate processing apparatus will be described along the processing flow shown in Fig. 5. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the control unit described in Fig. 4. Here, when the word "wafer" is used, it may mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on its surface.

[0046] First, after a substrate removal step (S801), a substrate loading step (S802) is performed, and the wafers 200 are loaded (boat loaded) into a predetermined processing chamber 201 by opening and closing the gate valve 205. That is, two wafers placed on the low-temperature tweezers 125a-1 and the high-temperature tweezers 125a-2 are loaded into the processing chamber 201.

[0047] (Inner Furnace Pressure / Temperature Adjustment Process (S803)) After the wafer 200 has been loaded into the processing chamber 201, the atmosphere in the processing chamber 201 is controlled to a predetermined pressure (e.g., 10 to 102,000 Pa). Specifically, while exhausting the gas using the vacuum pump 246, the valve opening of the pressure regulator 244 is feedback-controlled based on pressure information detected by the pressure sensor 245, and the pressure in the processing chamber 201 is set to the predetermined pressure.

[0048] (Inert Gas Supply Step (S804)) When the pressure and temperature in the process chamber 2015 are controlled to predetermined values ​​by the furnace pressure / temperature adjustment step S803, the drive mechanism 267 rotates the shaft 255 to rotate the wafer 200 via the boat 217 on the mounting table 210. At this time, an inert gas such as nitrogen gas is supplied via the gas supply pipe 232 (S804). Furthermore, at this time, the pressure in the process chamber 201 is adjusted to a predetermined value in the range of 10 Pa to 102000 Pa, for example, 101300 Pa to 101650 Pa. Note that the shaft may be rotated during the substrate loading step S402, that is, after the wafer 200 has been loaded into the process chamber 201.

[0049] (Preheating step (S805)) Next, when the pressure inside the processing chamber 201 reaches a predetermined level, the microwave oscillator 655 supplies a first microwave into the processing chamber 201 via the above-mentioned components. A preheating process is performed to heat the wafer 200 by repeating an ON time (e.g., 8 seconds) of the microwave supply and an OFF time (e.g., 2 seconds) that is shorter than the ON time, a predetermined number of times (14 times) or a predetermined time (140 seconds) with the first microwave output (e.g., 3200 W). This allows the temperature rise of the wafer to be gradual, thereby preventing the wafer from warping or cracking.

[0050] (Modification step (S806)) While maintaining the inside of the processing chamber 201 at a predetermined pressure, the microwave generator 655 supplies the second microwave (for example, 6000 W) into the processing chamber 201 via the above-mentioned components for a predetermined time (for example, 160 seconds). By supplying the second microwave into the processing chamber 201, the wafer 200 is heated to a temperature of 100° C. or more and 1000° C. or less, preferably 400° C. or more and 900° C. or less, and more preferably 500° C. or more and 700° C. or less. By processing the substrate at such a temperature, the wafer 200 is processed at a temperature at which the wafer 200 efficiently absorbs the microwave, and the speed of the modification process can be improved. In other words, if the wafer is processed at a temperature higher than 1000° C., the surface of the wafer is altered, making it difficult to absorb the microwave, and therefore it becomes difficult to heat the wafer. For this reason, it is desirable to perform the substrate processing in the above-mentioned temperature range.

[0051] In the preheating step (S805), the output during preheating was stepped at 3200 W, suppressing the deformation of the wafer to within 5 mm. Here, "stepped" refers to preheating at 3200 W for 8 seconds on and 2 seconds off (0 W) for 14 cycles (total: 140 seconds). Due to this stepped output, the temperature at the end of the susceptor also drops. After that, in the modification step (S806), microwaves are irradiated at 6000 W for 160 seconds, raising the substrate temperature to approximately 600°C. The maximum deformation of the Si wafer at this time was suppressed to within 5 mm.

[0052] (Substrate unloading process (S807)) After the pressure in the processing chamber 201 is returned to atmospheric pressure, the gate valve 205 is opened to spatially communicate the processing chamber 201 with the transfer chamber 203. Thereafter, the single wafer 200 after heating (processing) placed on the boat 217 is transferred to the transfer chamber 203 by the high-temperature tweezers 125a-2 of the transfer machine 125 (S807).

[0053] (Substrate cooling process (S808)) The single wafer 200 after heating (processing) that has been removed is moved by the high-temperature tweezers 125a-2 to the cooling chamber 204 by the continuous operation of the transfer device 125b and the transfer device elevator 125c, and two wafers 200 are placed in the cooling chamber 108 by the high-temperature tweezers 125a-2 and are cooled by being left there for a predetermined time (S808).

[0054] (Substrate Accommodating Step (S809)) The two wafers 200 cooled in the substrate cooling step S808 are taken out of the cooling chamber 108 and transferred to a predetermined pod.

[0055] In the above embodiment, the first microwave output is described as 3200 W, but the first output is set to 2000 W to 4000 W. The advantage of a first output of 2000 W to 4000 W is that it is possible to shorten the time from when the wafer starts to warp until it reaches its maximum and settles down. The disadvantage of a first output lower than 2000 W is that it takes too long for the wafer temperature to start to rise. Also, the disadvantage of a first output higher than 4000 W is that the wafer temperature rises too quickly, causing the wafer to warp too much, raising concerns about contact with other objects.

[0056] In the above embodiment, the second microwave is described as being 6000 W, but the second microwave output is 4000 W to 12000 W. The advantage of 4000 W to 12000 W is that the process wafer can be adjusted to a temperature appropriate for treatment. The disadvantage of a power lower than 4000 W is that a long time is required for treatment or insufficient processing occurs. The disadvantage of a power higher than 12000 W is that, depending on the number of wafers to be processed at one time, the microwave absorption limit of the wafer is exceeded, and discharge or plasma occurs.

[0057] On the other hand, for the first microwave, the microwave is turned on for 8 seconds and turned off for 2 seconds, but the former can be 5 to 20 seconds and the latter can be 1 to 5 seconds. The advantage of an ON time of 5 to 20 seconds is that the wafer can be heated quickly while suppressing warping. The disadvantage of a time shorter than 5 seconds is that the wafer does not heat up easily, and the disadvantage of a time longer than 20 seconds is that the wafer temperature rises rapidly, causing significant warping and the risk of contact with other wafers. Furthermore, with regard to the OFF time, the advantage of an OFF time of 1 to 5 seconds is that the wafer is not cooled too much and warping of the wafer can be suppressed, while the disadvantage of an OFF time shorter than 1 second is that there is not enough time for the temperature to equalize, and the disadvantage of an OFF time longer than 5 seconds is that the wafer is cooled too much and it takes a long time to return to temperature.

[0058] Furthermore, the modification processing time (annealing processing time) was set to 160 seconds, but it can be set to 60 to 1800 seconds. The advantage of 60 to 1800 seconds is that the processing time tends to be long in practice, although it is desirable to shorten the processing time corresponding to the treatment process under development. The disadvantage of a time shorter than 60 seconds is that it is difficult to adjust the uniformity within the wafer surface, and the disadvantage of a time longer than 1800 seconds is that the throughput decreases.

[0059] According to the device of the present embodiment described above, microwaves are cyclically irradiated to make the temperature distribution in the surface of the semiconductor substrate uniform, and when the microwaves are weak or OFF, heat conduction in the semiconductor substrate is promoted, thereby reducing the temperature difference on the semiconductor substrate, thereby suppressing the occurrence of warping or cracking of the semiconductor substrate, and further the contact between semiconductor substrates. Furthermore, cyclic irradiation makes it possible to irradiate high-power microwaves while maintaining the semiconductor substrate temperature low, making it possible to handle semiconductor substrates with temperature restrictions.

[0060] The above-described embodiment can be used with appropriate modifications, and the effects thereof can be obtained. For example, in the above description, a process for modifying an amorphous silicon film into a polysilicon film as a film mainly composed of silicon has been described, but the present invention is not limited to this, and a gas containing at least one of oxygen (O), nitrogen (N), carbon (C), and hydrogen (H) may be supplied to modify a film formed on the surface of the wafer 200. For example, when a hafnium oxide film (HfxOy film) is formed on the wafer 200 as a high dielectric film, the missing oxygen in the hafnium oxide film can be supplemented by supplying microwaves to heat the film while supplying a gas containing oxygen, thereby improving the characteristics of the high dielectric film.

[0061] Although a hafnium oxide film has been described here, the present invention is not limited thereto, and can be suitably applied to oxide films containing metal elements including at least one of aluminum (Al), titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), lanthanum (La), cerium (Ce), yttrium (Y), barium (Ba), strontium (Sr), calcium (Ca), lead (Pb), molybdenum (Mo), tungsten (W), etc., that is, to the case of modifying a metal-based oxide film. That is, the above-mentioned film formation sequence can also be suitably applied to the case of modifying a TiOCN film, a TiOC film, a TiON film, a TiO film, a ZrOCN film, a ZrOC film, a ZrON film, a ZrO film, a HfOCN film, a HfOC film, a HfON film, a HfO film, a TaOCN film, a TaOC film, a TaON film, a TaO film, a NbOCN film, a NbOC film, a NbON film, a NbO film, an AlOCN film, an AlOC film, an AlON film, an AlO film, a MoOCN film, a MoOC film, a MoON film, a MoO film, a WOCN film, a WOC film, a WON film, or a WO film on the wafer 200.

[0062] In addition, not only the high dielectric film but also a film mainly composed of silicon doped with impurities may be heated. Examples of films mainly composed of silicon include Si-based oxide films such as silicon nitride film (SiN film), silicon oxide film (SiO film), silicon oxycarbide film (SiOC film), silicon oxycarbonitride film (SiOCN film), and silicon oxynitride film (SiON film). The impurities include at least one of bromine (B), carbon (C), nitrogen (N), aluminum (Al), phosphorus (P), gallium (Ga), and arsenic (As).

[0063] Alternatively, the resist film may be based on at least one of polymethyl methacrylate (PMMA), epoxy resin, novolac resin, polyvinyl phenyl resin, and the like.

[0064] Although the above describes one step in the manufacturing process of a semiconductor device, the present invention is not limited to this and can also be applied to techniques for processing substrates, such as patterning processes in the manufacturing process of liquid crystal panels, patterning processes in the manufacturing process of solar cells, and patterning processes in the manufacturing process of power devices.

[0065] The present disclosure is not limited to the above-described embodiment, and further includes various modified examples. For example, the above-described embodiment has been described in detail to easily explain the present disclosure, and is not necessarily limited to those having all of the configurations described.

[0066] Furthermore, while the above-mentioned configurations, functions, and controller serving as a control unit have been described mainly with reference to an example in which a program is created to realize all or a part of them, it goes without saying that all or a part of them may be realized in hardware, for example, by designing an integrated circuit. In other words, all or a part of the functions of the processing unit may be realized by an integrated circuit, such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array), instead of a program. (Preferred embodiment of the present disclosure)

[0067] Preferred aspects of the present disclosure are described below.

[0068] (Appendix 1) a processing chamber for processing a substrate; a microwave generator for supplying microwaves to the processing chamber; and a control unit configured to be capable of controlling the microwave oscillator to perform a heating process in which the microwaves are supplied to the substrate at a first microwave output, with a supply period during which the microwaves are supplied and a stop period during which the microwaves are stopped that is shorter than the supply period, repeated a predetermined number of times or for a predetermined period of time, to heat the substrate, and a modification process in which the microwaves are supplied to the substrate for a predetermined period of time while maintaining a second microwave output higher than the first microwave output.

[0069] (Appendix 2) 2. The substrate processing apparatus according to claim 1, wherein the first microwave output is 2000W to 4000W.

[0070] (Appendix 3) 3. The substrate processing apparatus according to claim 1, wherein the second microwave output is 4000W to 12000W.

[0071] (Appendix 4) 2. The substrate processing apparatus according to claim 1, wherein the supply time is 5 seconds to 20 seconds, and the stop time is 1 second to 5 seconds.

[0072] (Appendix 5) 2. The substrate processing apparatus according to claim 1, wherein the modification treatment is performed for 60 seconds to 1800 seconds.

[0073] (Appendix 6) 2. The substrate processing apparatus according to claim 1, wherein an amorphous silicon film is formed on the substrate.

[0074] (Appendix 7) loading the substrate into a processing chamber of the substrate processing apparatus; a heating step of supplying microwaves to the substrate at a first microwave output, the supply time during which the first microwaves are supplied and a stop time during which the first microwaves are stopped that is shorter than the supply time, the supply time being repeated a predetermined number of times or for a first predetermined time; a modification step of supplying the second microwave to the substrate for a second predetermined time while maintaining a second microwave output higher than the first microwave output; The method for manufacturing a semiconductor device includes the steps of:

[0075] (Appendix 8) 8. The method for manufacturing a semiconductor device according to claim 7, wherein the first microwave output is 2000W to 4000W.

[0076] (Appendix 9) 9. The method for manufacturing a semiconductor device according to claim 7 or 8, wherein the second microwave output is 4000W to 12000W.

[0077] (Appendix 10) 8. The method for manufacturing a semiconductor device according to claim 7, wherein the supply time is 5 seconds to 20 seconds, and the stop time is 1 second to 5 seconds.

[0078] (Appendix 11) 8. The method for producing a semiconductor device according to claim 7, wherein the modification step is carried out for 60 seconds to 1800 seconds.

[0079] (Appendix 12) 8. The method for manufacturing a semiconductor device according to claim 7, wherein the heating step and the modifying step are performed on a substrate on which an amorphous silicon film is formed.

[0080] (Appendix 13) A step of loading a substrate into a processing chamber of the substrate processing apparatus; a heating step of supplying microwaves to the substrate at a first microwave output, the supply time during which the first microwaves are supplied and a stop time during which the microwaves are stopped that is shorter than the supply time, the supply time being repeated a predetermined number of times or for a first predetermined time; a modification step of supplying the second microwaves to the substrate for a second predetermined time while maintaining a second microwave power higher than the first microwave power; A program for causing a computer to execute the above-mentioned substrate processing apparatus.

[0081] (Appendix 14) The program according to claim 13, wherein the first microwave output is 2000W to 4000W.

[0082] (Appendix 15) 15. The program according to claim 13, wherein the second microwave output is 4000 W to 12000 W.

[0083] (Appendix 16) The program according to claim 13, wherein the supply time is 5 seconds to 20 seconds, and the stop time is 1 second to 5 seconds.

[0084] (Appendix 17) The program according to claim 13, wherein the modification procedure lasts for 60 seconds to 1800 seconds.

[0085] (Appendix 18) 12. The program according to claim 11, which performs the heating step and the modifying step on a substrate on which an amorphous silicon film is formed. [Explanation of symbols]

[0086] 100 Substrate processing apparatus 101 Quartz plate 103 Susceptor 199 Board 200 Wafer (semiconductor substrate) 655 Microwave oscillator

Claims

1. A processing chamber for processing a substrate on which a silicon-containing film is formed; a microwave generator for supplying microwaves to the processing chamber; a control unit configured to be capable of controlling the microwave oscillator to perform a heating process in which the first microwave is supplied to the substrate at a first microwave output of 2000 W to 4000 W, the first microwave being supplied for a supply time of 5 to 20 seconds, and the first microwave being stopped for a stop time of 1 to 5 seconds, which is shorter than the supply time, repeated a predetermined number of times or for a first predetermined time, and the second microwave is supplied to the substrate for a second predetermined time of 60 to 1800 seconds while maintaining a second microwave output of 4000 W to 12000 W higher than the first microwave output; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , wherein the silicon-containing film is an amorphous silicon film formed on the substrate.

3. carrying the substrate on which the silicon-containing film is formed into a processing chamber of a substrate processing apparatus; a heating step of supplying microwaves to the substrate at a first microwave output of 2000 W to 4000 W, the first microwaves being supplied for a supply time of 5 to 20 seconds and a stop time of 1 to 5 seconds, which is shorter than the supply time, to the substrate, the supply time being repeated a predetermined number of times or for a first predetermined time; a modification process of supplying the second microwaves to the substrate for a second predetermined time of 60 seconds to 1800 seconds while maintaining a second microwave output of 4000 W to 12000 W higher than the first microwave output.

4. 4. The method for manufacturing a semiconductor device according to claim 3, wherein the heating step and the modifying step are performed on a substrate on which an amorphous silicon film is formed as the silicon-containing film.

5. A step of carrying the substrate on which the silicon-containing film is formed into a processing chamber of the substrate processing apparatus; a heating step of supplying microwaves to the substrate at a first microwave output of 2000 W to 4000 W for a supply time of 5 to 20 seconds during which the first microwaves are supplied and a stop time of 1 to 5 seconds during which the first microwaves are stopped, the stop time being shorter than the supply time, for a predetermined number of times or for a first predetermined time; a modification step of supplying the second microwaves to the substrate for a second predetermined time of 60 seconds to 1800 seconds while maintaining a second microwave output of 4000 W to 12000 W higher than the first microwave output; A program for causing a computer to execute the above-mentioned substrate processing apparatus.

6. 6. The program according to claim 5, wherein the heating step and the modifying step are performed on a substrate on which an amorphous silicon film is formed as the silicon-containing film.

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