Resist pattern inspection method, resist pattern manufacturing method, substrate selection method, and printed wiring board manufacturing method

Abstract

A resist pattern inspection method according to this invention comprises an appearance inspection step for inspecting the appearance of a resist pattern on the basis of reflected light from the substrate that the resist pattern is formed on. A resist pattern manufacturing method according to this invention comprises a resist pattern formation step for forming a resist pattern on a substrate and a coloring step for coloring the resist pattern after the resist pattern formation step. A substrate selection method according to this invention comprises an appearance inspection step for inspecting the appearance of a resist pattern on the basis of reflected light from the substrate that the resist pattern is formed on and an evaluation step for evaluating the resist pattern on the basis of the appearance inspection in the appearance inspection step. A printed circuit board manufacturing method according to this invention comprises a conductor pattern formation step for forming a conductor pattern by etching or plating a substrate evaluated in the substrate selection method as having a resist pattern meeting a standard.

Description

[Technical field]

[0001] The present disclosure relates to a resist pattern inspection method, a resist pattern manufacturing method, a substrate selection method, and a printed wiring board manufacturing method. [Background technology]

[0002] When manufacturing a printed wiring board, first, a photosensitive layer is laminated on a substrate. Then, a predetermined portion of the photosensitive layer is irradiated with active light through a photomask to harden the exposed portion. Next, the support is peeled off and removed, and the unexposed portion of the photosensitive layer is removed with a developer to form a resist pattern on the substrate. Next, the substrate on which the resist pattern is formed is etched or plated using the resist pattern as a mask to form a conductor pattern on the substrate, and finally, the hardened portion of the photosensitive layer (resist pattern) is peeled off and removed from the substrate.

[0003] In such a manufacturing process for a printed wiring board, if a foreign matter or the like attached to the photomask or the photosensitive layer causes a problem in exposure to actinic radiation, defects may occur in the resist pattern, and defects such as disconnections or short circuits may occur in the conductor pattern. Therefore, conventionally, defects such as disconnections or short circuits in the conductor pattern have been inspected by visual inspection of the conductor pattern. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2005-207802 A Summary of the Invention [Problem to be solved by the invention]

[0005] By visually inspecting the resist pattern before forming the conductor pattern, defects can be found at an earlier stage in the manufacture of printed wiring boards. Furthermore, evaluating the yield of the resist pattern formation can lead to improvements in the resist pattern formation. Visual inspection of the resist pattern has conventionally been performed using a scanning electron microscope (hereinafter also referred to as "SEM") (see, for example, Patent Document 1).

[0006] However, SEM inspection is limited to 1 mm 2 For this reason, inspecting the resist pattern of the entire printed wiring board using an SEM takes a huge amount of time. Moreover, there is a large variation in inspection accuracy depending on the inspector and the SEM used.

[0007] Therefore, an object of the present disclosure is to provide a resist pattern inspection method, a resist pattern manufacturing method, a substrate selection method, and a printed wiring board manufacturing method that can evaluate a resist pattern with high accuracy in a short time. [Means for solving the problem]

[0008] The resist pattern inspection method of the present disclosure includes an appearance inspection step of inspecting the appearance of the resist pattern based on reflected light from a substrate on which the resist pattern is formed.

[0009] This resist pattern inspection method visually inspects the resist pattern based on reflected light from the substrate on which the resist pattern is formed, and therefore can detect defects in the resist pattern in a short time and with high accuracy compared to visual inspection using an SEM.

[0010] In the appearance inspection step, the contour of the resist pattern may be detected based on the light reflected from the substrate, and the resist pattern may be visually inspected based on the detected contour. In this resist pattern inspection method, the resist pattern can be appropriately visually inspected by utilizing the contour of the resist pattern detected based on the light reflected from the substrate as the visual inspection of the resist pattern.

[0011] In the appearance inspection process, the detected contour may be compared with pattern data for forming the resist pattern. In this resist pattern inspection method, the detected contour is compared with pattern data for forming the resist pattern as the appearance inspection of the resist pattern, thereby making it possible to detect defects in the resist pattern with high accuracy.

[0012] In the appearance inspection process, the line width of the resist pattern may be measured based on the detected contour. In this resist pattern inspection method, the line width of the resist pattern is measured based on the detected contour as the appearance inspection of the resist pattern, thereby making it possible to evaluate the formation state of the resist pattern.

[0013] The method may further include a resist pattern forming step of forming a resist pattern on the substrate, and a coloring step of coloring the resist pattern after the resist pattern forming step. In this resist pattern inspection method, the transmittance is reduced by coloring the resist pattern after forming the resist pattern on the substrate, and the contrast between the reflected light from the resist pattern and the reflected light from the region other than the resist pattern is increased. Therefore, the accuracy of detecting the contour of the resist pattern based on the reflected light from the substrate can be improved.

[0014] In the color development step, the resist pattern may be exposed to light to develop a color of the resist pattern. In this resist pattern inspection method, by exposing the resist pattern to light to develop a color of the resist pattern, it is possible to improve the detection accuracy of the contour of the resist pattern based on the reflected light from the substrate.

[0015] In the color development step, the resist pattern may be heated to develop the color of the resist pattern. In this resist pattern inspection method, by heating the resist pattern to develop the color of the resist pattern, it is possible to improve the detection accuracy of the contour of the resist pattern based on the reflected light from the substrate.

[0016] In the color development step, the temperature of the resist pattern may be set to 35° C. or more and 150° C. or less to develop the color of the resist pattern. In this resist pattern inspection method, by developing the color of the resist pattern by setting the temperature of the resist pattern to 35° C. or more and 150° C. or less, it is possible to improve the detection accuracy of the contour of the resist pattern based on the reflected light from the substrate.

[0017] In the color development step, the resist pattern may be dyed to develop a color. In this resist pattern inspection method, by dyeing the resist pattern to develop a color, it is possible to improve the detection accuracy of the contour of the resist pattern based on the reflected light from the substrate.

[0018] In the resist pattern forming step, a resist pattern containing a photocoloring agent that reacts with light to develop a color may be formed. In this resist pattern inspection method, a resist pattern containing a photocoloring agent that reacts with light to develop a color is formed, and the resist pattern can be exposed to light to develop a color.

[0019] In the resist pattern forming step, a resist pattern having a thickness of 1 μm or more and 100 μm or less may be formed. In this resist pattern inspection method, by forming a resist pattern having a thickness of 1 μm or more and 100 μm or less, it is possible to prevent the resist pattern from becoming too thick and increase the contrast between the light reflected from the resist pattern and the light reflected from the region other than the resist pattern. Therefore, it is possible to improve the detection accuracy of the contour of the resist pattern based on the light reflected from the substrate.

[0020] The method for producing a resist pattern according to the present disclosure includes a resist pattern forming step of forming a resist pattern on a substrate, and a color developing step of coloring the resist pattern after the resist pattern forming step.

[0021] In this resist pattern manufacturing method, the resist pattern is formed on a substrate, and then the resist pattern is colored, thereby increasing the contrast between the light reflected from the resist pattern and the light reflected from the area other than the resist pattern. Therefore, for example, when detecting the contour of the resist pattern based on the light reflected from the substrate on which the resist pattern is formed, the detection accuracy can be improved. Also, when measuring the line width of the resist pattern, it becomes easier to focus on the surface of the resist pattern or the contour of the resist pattern.

[0022] In the color development step, the resist pattern may be exposed to light to develop a color of the resist pattern. In this resist pattern manufacturing method, by exposing the resist pattern to light to develop a color of the resist pattern, it is possible to improve the detection accuracy of the outline of the resist pattern based on the light reflected from the substrate, for example.

[0023] In the color development step, the resist pattern may be heated to develop the color of the resist pattern. In this resist pattern manufacturing method, by heating the resist pattern to develop the color of the resist pattern, for example, it is possible to improve the detection accuracy of the contour of the resist pattern based on the reflected light from the substrate.

[0024] In the color development step, the temperature of the resist pattern may be set to 35° C. or higher and 150° C. or lower to develop the color of the resist pattern. In this method for producing a resist pattern, by developing the color of the resist pattern by setting the temperature of the resist pattern to 35° C. or higher and 150° C. or lower, it is possible to improve, for example, the detection accuracy of the contour of the resist pattern based on the reflected light from the substrate.

[0025] In the color development step, the resist pattern may be dyed to develop a color of the resist pattern. In this resist pattern manufacturing method, by dyeing the resist pattern to develop a color of the resist pattern, for example, it is possible to improve the detection accuracy of the contour of the resist pattern based on the reflected light from the substrate.

[0026] In the resist pattern forming step, a resist pattern containing a photocoloring agent that reacts with light to develop a color may be formed. In this resist pattern manufacturing method, a resist pattern containing a photocoloring agent that reacts with light to develop a color is formed, and the resist pattern can be exposed to light to develop a color.

[0027] In the resist pattern forming process, a resist pattern having a thickness of 1 μm or more and 100 μm or less may be formed. In this resist pattern manufacturing method, by forming a resist pattern having a thickness of 1 μm or more and 100 μm or less, it is possible to increase the contrast between the reflected light from the resist pattern and the reflected light from the region other than the resist pattern while suppressing the resist pattern from becoming too thick. Therefore, for example, it is possible to improve the detection accuracy of the contour of the resist pattern based on the reflected light from the substrate.

[0028] The substrate selection method according to the present disclosure includes an appearance inspection process for visually inspecting the resist pattern based on reflected light from a substrate on which the resist pattern is formed, and an evaluation process for evaluating the resist pattern based on the appearance inspection in the appearance inspection process.

[0029] This substrate selection method evaluates resist patterns by visual inspection of the resist patterns based on reflected light from the substrates, and therefore allows substrates to be selected with high accuracy and in a short time compared to visual inspection using an SEM.

[0030] In the evaluation step, the resist pattern may be evaluated based on the number or shape of defects in the resist pattern. In this substrate selection method, the resist pattern is evaluated based on the number or shape of defects in the resist pattern, whereby the substrate can be appropriately evaluated.

[0031] The method for producing a printed wiring board according to the present disclosure includes a conductor pattern forming step of forming a conductor pattern by etching or plating a substrate whose resist pattern evaluation in the above-mentioned substrate selection method satisfies a criterion.

[0032] In this method of manufacturing a printed wiring board, a substrate whose resist pattern evaluation in the above-mentioned substrate selection method satisfies the criteria is etched or plated to form a conductor pattern, thereby suppressing the occurrence of defects such as breaks or shorts in the conductor pattern. Effect of the Invention

[0033] According to the present disclosure, a resist pattern can be evaluated with high accuracy in a short time. [Brief description of the drawings]

[0034] [Figure 1] FIG. 1(a) is a schematic perspective view for explaining a photosensitive layer forming step in the resist pattern forming step, FIG. 1(b) is a schematic perspective view for explaining an exposure step in the resist pattern forming step, and FIG. 1(c) is a schematic perspective view for explaining a development step in the resist pattern forming step. [Diagram 2] 2(a), 2(b) and 2(c) are schematic perspective views for explaining the formation of a conductor pattern based on a defective resist pattern. [Diagram 3] FIG. 3 is a schematic perspective view for explaining the appearance inspection step. [Figure 4] FIG. 4 is a schematic diagram for explaining reflected light from a substrate. [Diagram 5] FIG. 5 is a schematic diagram for explaining the pattern data. [Figure 6] 6(a), 6(b) and 6(c) are schematic perspective views for explaining the formation of the conductor patterns. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0035] Hereinafter, the embodiments of the resist pattern inspection method, resist pattern manufacturing method, substrate selection method, and printed wiring board manufacturing method of the present disclosure will be described with reference to the drawings. In addition, the same or corresponding parts in all the drawings will be given the same reference numerals. In addition, "A or B" may include either A or B, or may include both.

[0036] [Method of inspecting resist patterns] The resist pattern inspection method according to the embodiment includes an appearance inspection step of visually inspecting the resist pattern based on reflected light from a substrate on which the resist pattern is formed. The resist pattern inspection method may include a resist pattern formation step of forming a resist pattern on a substrate prior to the appearance inspection step. The resist pattern inspection method may also include other steps. In this specification, the term "step" includes not only an independent step, but also a step that cannot be clearly distinguished from other steps, as long as the intended effect of the step is achieved. The resist pattern may be a photocured product pattern of a photosensitive resin composition, or a relief pattern.

[0037] <Resist pattern formation process> As shown in Fig. 1, the resist pattern forming process includes a photosensitive layer forming process (see Fig. 1(a)) in which a photosensitive layer is laminated on a substrate, an exposure process (see Fig. 1(b)) in which a predetermined portion of the photosensitive layer is irradiated with active light rays to form a photocured portion, and a development process (see Fig. 1(c)) in which an area of ​​the photosensitive layer other than the predetermined portion is removed from the substrate. The resist pattern forming process may include other processes as necessary.

[0038] (Photosensitive layer formation process) 1(a), in the photosensitive layer forming step, a photosensitive layer 2 and a support 3 are formed on a substrate 1. The substrate 1 includes, for example, an insulating layer 1a and a conductor layer 1b formed on the insulating layer 1a. The photosensitive layer 2 is formed on the conductor layer 1b of the substrate 1. The conductor layer 1b is, for example, electroless copper plating.

[0039] The photosensitive layer 2 is a layer formed using a photosensitive resin composition whose properties change (for example, photocured) when irradiated with light. The photosensitive resin composition forming the photosensitive layer 2 contains, for example, a binder polymer, a photopolymerizable compound, and a photopolymerization initiator. The photosensitive resin composition forming the photosensitive layer 2 may contain a photosensitizer, a polymerization inhibitor, or other components as necessary. The photosensitive resin composition forming the photosensitive layer 2 may contain additives such as dyes such as malachite green, Victoria Pure Blue, brilliant green, and methyl violet, photocoloring agents such as tribromophenyl sulfone, leuco crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, and o-chloroaniline, thermal coloring inhibitors, plasticizers such as p-toluenesulfonamide, pigments, fillers, defoamers, flame retardants, adhesion imparting agents, leveling agents, peeling promoters, antioxidants, fragrances, imaging agents, and thermal crosslinking agents.

[0040] As the support 3, for example, a polymer film (support film) having heat resistance and solvent resistance, such as polyesters such as polyethylene terephthalate (PET), polyolefins such as polypropylene and polyethylene, may be used.

[0041] As a method for forming the photosensitive layer 2 and the support 3 on the substrate 1, for example, a method using a photosensitive element (not shown) is available. The photosensitive element includes, for example, a support, a photosensitive layer, and a protective layer in this order. After removing the protective layer, the photosensitive layer of the photosensitive element is heated and pressed onto the substrate 1 to form the photosensitive layer 2 and the support 3 on the substrate 1. This results in a laminate 4 including the substrate 1, the photosensitive layer 2, the support 3, and a support film (not shown) in this order. An intermediate layer or the like may be disposed between the support 3 and the photosensitive layer 2.

[0042] (Exposure process) As shown in FIG. 1(b), in the exposure step, the photosensitive layer 2 is exposed to active light rays through the support 3. As a result, the exposed portion irradiated with the active light rays is photocured to form a photocured portion 2a (latent image). As the exposure method, a known exposure method can be applied, and examples thereof include a method of irradiating an image of the active light rays through a photomask 5 called artwork (mask exposure method), an LDI (Laser Direct Imaging) exposure method, and a method of irradiating an image of the photomask through a lens using active light projected thereon (projection exposure method).

[0043] (Development process) 1(c), in the development step, the uncured portion 2b of the photosensitive layer 2 is removed from the substrate 1. Through the development step, a resist pattern 6 made of the photocured portion 2a formed by photocuring the photosensitive layer 2 is formed on the substrate 1.

[0044] The thickness of the resist pattern 6 formed on the substrate 1 may be, for example, 1 μm or more, 3 μm or more, or 5 μm or more. The thickness of the resist pattern 6 formed on the substrate 1 may be, for example, 100 μm or less, 60 μm or less, or 40 μm or less. The minimum and maximum values ​​of the thickness of the resist pattern 6 can be appropriately combined. For example, the thickness of the resist pattern 6 formed on the substrate 1 may be 1 μm or more and 100 μm or less, 3 μm or more and 60 μm or less, or 5 μm or more and 40 μm or less. The thickness of the resist pattern 6 is the height relative to the substrate 1 in a direction perpendicular to the main surface of the substrate 1.

[0045] <Appearance inspection process> In the appearance inspection step, the appearance of the resist pattern 6 is inspected based on the light reflected from the substrate 1 on which the resist pattern 6 is formed.

[0046] In the above-mentioned exposure step, if a foreign matter 7 (see FIG. 1) attached to the photomask 5, the support 3, or the photosensitive layer 2 interferes with exposure to active light, a defect 8 may occur in the resist pattern 6. To explain in detail, as shown in FIG. 2(a), FIG. 2(b), and FIG. 2(c), in the manufacture of a printed wiring board, a conductor pattern 9 is formed by etching or plating a substrate 1 on which a resist pattern 6 is formed. Therefore, if the resist pattern 6 has a defect 8, defects such as a break or a short circuit may occur in the conductor pattern 9 formed by the etching or plating process. In addition, in the exposure step, the line width of the resist pattern 6 may become thicker or thinner depending on the exposure state of the active light.

[0047] Therefore, in the appearance inspection process, in order to find defects before forming the conductor pattern, the resist pattern 6 is visually inspected. In the appearance inspection process, for example, the contour of the resist pattern 6 is detected based on the reflected light from the substrate 1, and the resist pattern 6 is visually inspected based on the detected contour.

[0048] As shown in FIG. 3, first, inspection light is emitted to the substrate 1 on which the resist pattern 6 is formed, and reflected light from the substrate 1 is received. The wavelength of the inspection light may be, for example, 380 nm or more, 430 nm or more, or 600 nm or more. The wavelength of the inspection light may be, for example, 830 nm or less, 780 nm or less, or 700 nm or less. The minimum and maximum values ​​of these wavelengths can be appropriately combined. For example, the wavelength of the inspection light may be 380 nm or more and 830 nm or less, 430 nm or more and 780 nm or less, or 600 nm or more and 700 nm or less. Note that white light using a laser excitation light source or the like may be used as the inspection light. The light receiving area of ​​the substrate 1 that receives the reflected light in the appearance inspection process is, for example, 1 cm 2 More than 2500cm 2 Below, 5cm 2 More than 1200cm 2 Below, 25cm 2 More than 600cm 2The following may be used as the method of irradiating the inspection light. For example, either specular reflected light or diffuse reflected light may be used, or a combination of specular reflected light and diffuse reflected light may be used.

[0049] Next, as shown in Fig. 4, a contour 10 of the resist pattern 6 is identified based on the contrast between the light reflected from the resist pattern 6 and the light reflected from an area other than the resist pattern 6. For example, a boundary where the contrast of brightness or chromaticity increases in a received image of the reflected light is detected. Then, this detected boundary is identified as the contour 10 of the resist pattern 6. For example, an optical automatic appearance inspection device (hereinafter also referred to as "AOI") such as AOI Ultra Fusion 600 (trade name, manufactured by Orbotech Japan Co., Ltd.) is used to detect the contour 10 of the resist pattern 6 based on the light reflected from the substrate 1.

[0050] Examples of visual inspection of the resist pattern 6 include an inspection to check the presence or absence of defects 8 in the resist pattern 6, an inspection to check the shape, position, size, etc. (hereinafter also referred to as "shape, etc.") of defects 8 in the resist pattern 6, an inspection to check the shape of the resist pattern 6, and an inspection to measure the line width of the resist pattern 6.

[0051] In an inspection to check for the presence or absence of defects 8 in a resist pattern 6, for example, as shown in Figures 4 and 5, a contour 10 of the resist pattern 6 detected based on reflected light from a substrate 1 is compared with pattern data 11 for forming the resist pattern 6 in a resist pattern forming process. For example, CAD data for the resist pattern 6 is used as the pattern data 11. Then, points 10a where the detected contour 10 differs from the pattern data 11 are detected as defects 8 in the resist pattern 6. Then, the number of detected defects 8 is calculated.

[0052] In an inspection for examining the shape, etc. of a defect 8 in a resist pattern 6, for example, as shown in Figures 4 and 5, a contour 10 of the resist pattern 6 detected based on reflected light from a substrate 1 is compared with pattern data 11 for forming the resist pattern 6 in a resist pattern forming process. Then, a portion 10a where the detected contour 10 differs from the pattern data 11 is detected as a defect 8 in the resist pattern 6. Then, the shape, etc. of the detected defect 8 is examined based on the contour of the detected defect 8.

[0053] In an inspection for examining the shape of the resist pattern 6, for example, as shown in Figures 4 and 5, a contour 10 of the resist pattern 6 detected based on reflected light from the substrate 1 is compared with pattern data 11 for forming the resist pattern 6 in the resist pattern forming process. Then, the degree of difference in the shape of the resist pattern 6 with respect to the pattern data 11 is examined.

[0054] In an inspection for measuring the line width of the resist pattern 6, for example, the line width of the resist pattern 6 is measured by measuring the interval between contours 10 of the resist pattern 6 detected based on reflected light from the substrate 1.

[0055] <Color development process> The resist pattern inspection method according to the embodiment may include a color development step of coloring the resist pattern 6 formed on the substrate 1, if necessary. Here, color development refers not only to the case where a color is developed from a colorless and transparent state, but also to the case where a color that has already been developed becomes darker. The color becomes darker, for example, when the light transmittance decreases. The color development step is performed, for example, after the resist pattern formation step and before the inspection step and the appearance inspection step. The color development step is, for example, at least one of an exposure treatment, a heat treatment, an exposure and heat treatment, and a dyeing treatment.

[0056] (Exposure processing) In the exposure process, the resist pattern 6 is exposed to light to develop color in the resist pattern 6. For example, in the resist pattern forming process, a resist pattern 6 containing a photocoloring agent is formed. The photocoloring agent is a coloring agent that develops color by exposure (reacts with light to develop color). The photocoloring agent may be, for example, a coloring agent that develops color by exposure and temperature rise, or a coloring agent whose color development is promoted by temperature rise. The resist pattern 6 containing a photocoloring agent is formed, for example, by making the photosensitive layer 2 contain a photocoloring agent. Examples of such photocoloring agents include tribromophenyl sulfone, leuco crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, and o-chloroaniline. Then, in the exposure process, the substrate 1 on which the resist pattern 6 is formed is exposed to active light. As a result, the photocoloring agent contained in the resist pattern 6 develops color. In the exposure process, for example, the resist pattern 6 is exposed so that the ratio of the transmittance of the resist pattern 6 after the exposure process to the transmittance of the resist pattern 6 before the exposure process of the inspection light emitted to the substrate 1 in the appearance inspection process is 98% or less, 96% or less, or 90% or less.

[0057] The wavelength range of the actinic ray is, for example, a wavelength range in which the photocoloring agent contained in the resist pattern 6 can develop color by irradiation with the actinic ray. The time for irradiating the actinic ray depends on the output of the actinic ray and the type of the photocoloring agent, and the like. For example, the amount of energy (exposure amount) for irradiating the actinic ray may be 0.5 J or more, 1.0 J or more, or 1.5 J or more when the photocoloring agent is leuco crystal violet. Similarly, when the photocoloring agent is leuco crystal violet, it may be 5.0 J or less, 3.0 J or less, or 2.5 J or less. The minimum and maximum values ​​of these energy amounts can be appropriately combined. For example, the amount of energy for irradiating the actinic ray may be 0.5 J or more and 5.0 J or less, 1.0 J or more and 3.0 J or less, or 1.5 J or more and 2.5 J or less.

[0058] (Heat treatment) In the heat treatment, the resist pattern 6 is heated to develop the color of the resist pattern 6. For example, in the resist pattern forming process, the resist pattern 6 containing a thermal coloring agent is formed. The thermal coloring agent is a coloring agent that contributes to coloring when the temperature rises. The thermal coloring agent may be, for example, a coloring agent that develops color when exposed to light and whose coloring is promoted when the temperature rises. The resist pattern 6 containing a thermal coloring agent is formed, for example, by making the photosensitive layer 2 contain a coloring agent. As such a thermal coloring agent, for example, the same as a photocoloring agent can be used. Then, in the heat treatment, the substrate 1 on which the resist pattern 6 is formed is heated. This causes the thermal coloring agent contained in the resist pattern 6 to develop color. In the heat treatment, the resist pattern 6 is heated so that the ratio of the transmittance of the resist pattern 6 after the heat treatment to the transmittance of the resist pattern 6 before the heat treatment of the inspection light emitted to the substrate 1 in the appearance inspection process is 98% or less, 96% or less, or 90% or less.

[0059] In the heat treatment, for example, the temperature of the resist pattern 6 may be 35°C or more, 50°C or more, or 60°C or more. Similarly, the temperature of the resist pattern 6 may be 150°C or less, 120°C or less, or 100°C or less. The minimum and maximum values ​​of these temperatures can be appropriately combined. For example, the temperature of the resist pattern 6 may be 35°C or more and 150°C or less, 50°C or more and 120°C or less, or 60°C or more and 100°C or less. In addition, when the ambient temperature around the substrate 1 is within these temperature ranges, it is not necessary to prepare a separate heat source. The temperature of the resist pattern 6 may be the temperature of the resist pattern 6 itself, the temperature of the substrate 1 on which the resist pattern 6 is formed, or the temperature in the vicinity of the resist pattern 6. The temperature in the vicinity of the resist pattern 6 is, for example, the temperature within 50 cm, 30 cm, or 10 cm from the resist pattern 6.

[0060] (Exposure heat treatment) In the exposure and heat treatment, the resist pattern 6 is exposed and heated to develop color in the resist pattern 6. For example, in the resist pattern formation process, a resist pattern 6 containing a photothermal coloring agent is formed. The photothermal coloring agent is a coloring agent that contributes to color development through exposure and temperature rise. The photothermal coloring agent may be, for example, a coloring agent that develops color through exposure and whose color development is promoted through temperature rise. The resist pattern 6 containing a photothermal coloring agent is formed, for example, by making the photosensitive layer 2 contain a photothermal coloring agent. As such a photothermal coloring agent, for example, the same agent as the photothermal coloring agent can be used. Then, in the exposure and heat treatment, the substrate 1 on which the resist pattern 6 is formed is exposed to active light rays and heated. As a result, the photothermal coloring agent contained in the resist pattern 6 develops color. In the exposure and heat treatment, for example, the resist pattern 6 is exposed and heated so that the ratio of the transmittance of the resist pattern 6 after the exposure and heat treatment to the transmittance of the resist pattern 6 before the exposure and heat treatment of the inspection light emitted to the substrate 1 in the appearance inspection process is 98% or less, 96% or less, or 90% or less.

[0061] The wavelength range of the actinic ray is, for example, a wavelength range in which the photothermal coloring agent contained in the resist pattern 6 can develop color by irradiation with the actinic ray. The time for irradiating the actinic ray depends on the output of the actinic ray and the type of the photothermal coloring agent, but for example, the amount of energy (exposure amount) for irradiating the actinic ray may be 0.5 J or more, 1.0 J or more, or 1.5 J or more when the photothermal coloring agent is leuco crystal violet. Similarly, when the photothermal coloring agent is leuco crystal violet, it may be 5.0 J or less, 3.0 J or less, or 2.5 J or less. The minimum and maximum values ​​of these energy amounts can be appropriately combined. For example, the amount of energy for irradiating the actinic ray may be 0.5 J or more and 5.0 J or less, 1.0 J or more and 3.0 J or less, or 1.5 J or more and 2.5 J or less.

[0062] In the exposure heat treatment, for example, the temperature of the resist pattern 6 may be 35°C or more, 50°C or more, or 60°C or more as heating for coloring the resist pattern 6. Similarly, the temperature of the resist pattern 6 may be 150°C or less, 120°C or less, or 100°C or less. The minimum and maximum values ​​of these temperatures can be appropriately combined. For example, the temperature of the resist pattern 6 may be 35°C or more and 150°C or less, 50°C or more and 120°C or less, or 60°C or more and 100°C or less. In addition, when the ambient temperature around the substrate 1 is within these temperature ranges, it is not necessary to prepare a separate heat source. The temperature of the resist pattern 6 may be the temperature of the resist pattern 6 itself, the temperature of the substrate 1 on which the resist pattern 6 is formed, or the temperature in the vicinity of the resist pattern 6. The temperature in the vicinity of the resist pattern 6 is, for example, the temperature within 50 cm, 30 cm, or 10 cm from the resist pattern 6.

[0063] (Dyeing process) In the dyeing process, the resist pattern 6 is dyed to develop a color. For example, the substrate 1 on which the resist pattern 6 is formed is immersed in a dyeing solution. For example, resin dye SDN Black (product name, manufactured by Osaka Kasei Co., Ltd.) is used as the dyeing solution. In this case, the entire substrate 1 may be immersed in the dyeing solution, or a part of the substrate 1 may be immersed in the dyeing solution so that the entire resist pattern 6 is immersed in the dyeing solution. In addition, for example, the dyeing solution may be dripped onto the substrate 1 on which the resist pattern 6 is formed. In this case, the dyeing solution may be dripped onto the entire substrate 1, or the dyeing solution may be dripped onto a part of the substrate 1 so that the dyeing solution is dripped onto the entire resist pattern 6.

[0064] [Method of manufacturing resist pattern] The method for producing a resist pattern according to the embodiment includes a resist pattern forming step of forming a resist pattern 6 on a substrate 1, and a color developing step of coloring the resist pattern 6 after the resist pattern forming step. The resist pattern forming step of the method for producing a resist pattern may be the same as the resist pattern forming step of the above-mentioned method for inspecting a resist pattern. The color developing step of the method for producing a resist pattern may be the same as the color developing step of the above-mentioned method for inspecting a resist pattern. The method for producing a resist pattern may include other steps.

[0065] [Board selection method] The substrate selection method according to this embodiment includes an appearance inspection step of visually inspecting the resist pattern 6 based on reflected light from the substrate 1 on which the resist pattern 6 is formed, and an evaluation step of evaluating the resist pattern 6 based on the appearance inspection in the appearance inspection step. The appearance inspection step of the substrate selection method may be the same as the appearance inspection step of the above-mentioned resist pattern inspection method, for example. The substrate selection method may include other steps.

[0066] <Evaluation process> In the evaluation step, the resist pattern 6 is evaluated based on a predetermined standard.

[0067] For example, when a visual inspection is performed in the visual inspection process to check for the presence or absence of defects 8 in the resist pattern 6, the evaluation process evaluates the resist pattern 6 based on the number of defects 8 in the resist pattern 6. For example, in the evaluation process, if the number of defects 8 in the resist pattern 6 is below a predetermined reference number, the resist pattern 6 is evaluated as good, and if the number of defects 8 in the resist pattern 6 is above the predetermined reference number, the resist pattern 6 is evaluated as bad.

[0068] Furthermore, for example, when an inspection is performed in the appearance inspection process to check the shape, etc. of the defect 8 in the resist pattern 6, the evaluation process evaluates the resist pattern 6 based on the size of the defect 8 in the resist pattern 6. For example, if the shape, etc. of the defect 8 in the resist pattern 6 is within a predetermined tolerance range, it is evaluated as good, and if the shape of the defect 8 in the resist pattern 6 is outside the predetermined tolerance range, it is evaluated as bad.

[0069] Furthermore, for example, when an inspection is performed to check the shape of the resist pattern 6 in the appearance inspection process, the evaluation process evaluates the resist pattern 6 based on the shape of the resist pattern 6. For example, if the degree of difference in the shape of the resist pattern 6 from the pattern data 11 is within a predetermined tolerance range, it is determined to be good, and if the degree of difference in the shape of the resist pattern 6 from the pattern data 11 is outside the predetermined tolerance range, it is determined to be bad.

[0070] Furthermore, for example, when a visual inspection is performed in the visual inspection process to measure the line width of the resist pattern 6, the evaluation process evaluates the resist pattern 6 based on the line width of the resist pattern 6. For example, in the evaluation process, if the line width of the resist pattern 6 is within a predetermined reference range, it is evaluated as good, and if the line width of the resist pattern 6 is outside the predetermined reference range, it is evaluated as bad.

[0071] [Manufacturing method for printed wiring boards] The method for manufacturing a printed wiring board according to this embodiment includes a conductor pattern forming step of etching or plating a substrate whose resist pattern satisfies the criteria in the substrate selection method described above to form a conductor pattern. In other words, in the conductor pattern forming step, a substrate whose resist pattern does not satisfy the criteria in the substrate selection method is not etched or plated to form a conductor pattern. The method for manufacturing a printed wiring board according to this embodiment may include other steps, such as a resist pattern removing step, as necessary.

[0072] In the etching process, the resist pattern formed on the substrate having the conductor layer is used as a mask to etch away the conductor layer of the substrate that is not covered with the resist. After the etching process, the resist is removed by removing the resist pattern 6 to form the conductor pattern.

[0073] As shown in Fig. 6(a), in the plating process, the resist pattern 6 formed on the substrate 1 having the conductor layer 1b is used as a mask to plate copper, solder, or the like on the conductor layer 1b of the substrate 1 that is not covered with the resist. After the plating process, the resist is removed by removing the resist pattern 6 as shown in Fig. 6(b), and the conductor layer 1b that was covered with the resist is etched as shown in Fig. 6(c) to form the conductor pattern 9. The plating process may be performed by electrolytic plating or electroless plating, and may be performed by electrolytic plating.

[0074] As described above, in the resist pattern inspection method according to this embodiment, the resist pattern 6 is visually inspected based on reflected light from the substrate 1 on which the resist pattern 6 is formed, and therefore defects 8 in the resist pattern 6 can be detected with high accuracy and in a short time compared to visual inspection using an SEM.

[0075] Furthermore, in this resist pattern inspection method, the outline 10 of the resist pattern 6 detected based on the reflected light from the substrate 1 is used for visual inspection of the resist pattern 6, thereby enabling the resist pattern 6 to be visually inspected appropriately.

[0076] Furthermore, in this resist pattern inspection method, by visually inspecting the resist pattern 6, the detected contour 10 is compared with the pattern data 11 for forming the resist pattern 6, thereby making it possible to detect defects 8 in the resist pattern 6 with high accuracy.

[0077] Moreover, in this resist pattern inspection method, as an appearance inspection of the resist pattern 6, the line width of the resist pattern 6 is measured based on the detected contour 10, so that the formation state of the resist pattern 6 can be evaluated.

[0078] Furthermore, in this resist pattern inspection method, the resist pattern 6 is formed on the substrate 1 and then colored, thereby decreasing the transmittance and increasing the contrast between the light reflected from the resist pattern 6 and the light reflected from areas other than the resist pattern 6. This makes it possible to improve the accuracy of detecting the contour 10 of the resist pattern 6 based on the light reflected from the substrate 1.

[0079] Furthermore, in this resist pattern inspection method, by exposing the resist pattern 6 to light and causing the resist pattern 6 to develop color, the detection accuracy of the contour 10 of the resist pattern 6 based on the reflected light from the substrate 1 can be improved.

[0080] Furthermore, in this resist pattern inspection method, the resist pattern 6 is heated to cause the resist pattern 6 to develop color, thereby making it possible to improve the accuracy of detecting the contour 10 of the resist pattern 6 based on the reflected light from the substrate 1.

[0081] Furthermore, in this resist pattern inspection method, the temperature of the resist pattern 6 is set to 35°C or higher and 150°C or lower, 50°C or higher and 120°C or lower, or 60°C or higher and 100°C or lower to cause the resist pattern 6 to develop color, thereby improving the detection accuracy of the contour 10 of the resist pattern 6 based on the reflected light from the substrate 1.

[0082] Furthermore, in this resist pattern inspection method, the resist pattern 6 is dyed to develop a color, thereby making it possible to improve the accuracy of detecting the contour 10 of the resist pattern 6 based on the reflected light from the substrate 1.

[0083] Furthermore, in this resist pattern inspection method, by forming the resist pattern 6 containing a photocoloring agent that reacts with light to develop color, the resist pattern 6 can be made to develop color by exposing the resist pattern 6 to light.

[0084] Incidentally, the thicker the resist pattern 6, the darker the reflected light from the resist pattern 6 becomes. That is, the thicker the resist pattern 6, the greater the contrast between the reflected light from the resist pattern 6 and the reflected light from the region other than the resist pattern 6. From the viewpoint of increasing the contrast between the reflected light from the resist pattern 6 and the reflected light from the region other than the resist pattern 6, the thickness of the resist pattern 6 formed on the substrate 1 may be, for example, 1 μm or more, 3 μm or more, or 5 μm or more. The thickness of the resist pattern 6 formed on the substrate 1 may be, for example, 100 μm or less, 60 μm or less, or 40 μm or less. The minimum and maximum values ​​of the thickness of the photosensitive layer 2 can be appropriately combined. For example, the thickness of the resist pattern 6 formed on the substrate 1 may be 1 μm or more and 100 μm or less, 3 μm or more and 60 μm or less, or 5 μm or more and 40 μm or less.

[0085] In this resist pattern inspection method, by forming the resist pattern 6 with a thickness of 1 μm to 100 μm, 3 μm to 60 μm, or 5 μm to 40 μm, it is possible to increase the contrast between the light reflected from the resist pattern 6 and the light reflected from regions other than the resist pattern 6 while preventing the resist pattern 6 from becoming too thick. Therefore, it is possible to improve the detection accuracy of the outline 10 of the resist pattern 6 based on the light reflected from the substrate 1.

[0086] In the method for producing a resist pattern according to this embodiment, the resist pattern 6 is formed on the substrate 1, and then the resist pattern 6 is colored, thereby increasing the contrast between the light reflected from the resist pattern 6 and the light reflected from areas other than the resist pattern 6. This makes it possible to improve the detection accuracy, for example, when detecting the contour 10 of the resist pattern 6 based on the light reflected from the substrate 1 on which the resist pattern 6 is formed. Also, when measuring the line width of the resist pattern 6, it becomes easier to focus on the surface of the resist pattern 6 or the contour of the resist pattern 6.

[0087] Furthermore, in this method of manufacturing a resist pattern, by exposing the resist pattern 6 to light to cause the resist pattern 6 to develop a color, it is possible to improve the accuracy of detecting the contour 10 of the resist pattern 6 based on the reflected light from the substrate 1, for example.

[0088] Furthermore, in this method of producing a resist pattern, by heating the resist pattern 6 to cause the resist pattern 6 to develop color, it is possible to improve the accuracy of detecting the contour 10 of the resist pattern 6 based on the reflected light from the substrate 1, for example.

[0089] Furthermore, in this resist pattern manufacturing method, the temperature of the resist pattern 6 is set to 35°C or higher and 150°C or lower, 50°C or higher and 120°C or lower, or 60°C or higher and 100°C or lower to cause the resist pattern 6 to develop color, thereby improving, for example, the detection accuracy of the contour 10 of the resist pattern 6 based on reflected light from the substrate 1.

[0090] Furthermore, in this method of manufacturing a resist pattern, by dyeing the resist pattern 6 to cause the resist pattern 6 to develop a color, it is possible to improve the accuracy of detecting the contour 10 of the resist pattern 6 based on the reflected light from the substrate 1, for example.

[0091] Furthermore, in this method for producing a resist pattern, by forming the resist pattern 6 containing a photocoloring agent that reacts with light to develop color, the resist pattern 6 can be made to develop color by exposing it to light.

[0092] Furthermore, in this resist pattern manufacturing method, by forming the resist pattern 6 with a thickness of 1 μm to 100 μm, 3 μm to 60 μm, or 5 μm to 40 μm, it is possible to increase the contrast between the light reflected from the resist pattern 6 and the light reflected from regions other than the resist pattern 6 while preventing the resist pattern 6 from becoming too thick. Therefore, for example, it is possible to improve the detection accuracy of the outline 10 of the resist pattern 6 based on the light reflected from the substrate 1.

[0093] In the substrate selection method of this embodiment, the resist pattern 6 is evaluated by visual inspection of the resist pattern 6 based on reflected light from the substrate 1, so that the substrate 1 can be selected with high accuracy in a short time compared to visual inspection using an SEM.

[0094] Moreover, in this substrate selection method, the substrate 1 is evaluated based on the number or shape of defects in the resist pattern 6, so that the substrate 1 can be appropriately evaluated.

[0095] In the method for manufacturing a printed wiring board according to this embodiment, a substrate 1 whose resist pattern 6 satisfies the evaluation criteria in the substrate selection method described above is etched or plated to form a conductive pattern 9, thereby suppressing the occurrence of defects such as breaks or shorts in the conductive pattern 9.

[0096] The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. EXAMPLES

[0097] Next, examples of the present disclosure will be described, but the present disclosure is not limited to the following examples.

[0098] 1. Photosensitive element and substrate The photosensitive elements and substrates used in Examples 1 to 12 and Comparative Example 1 are shown in Table 1 and are as follows: The last two digits of the product name of the photosensitive element indicate the film thickness (unit: μm) of the photosensitive layer. (Photosensitive element) F-1: RY-5115 (product name, manufactured by Showa Denko Materials Co., Ltd.) F-2: RY-5125 (manufactured by Showa Denko Materials Co., Ltd., product name and photosensitive layer composition are the same as (F-1)) F-3: FL-7225 (product name, manufactured by Showa Denko Materials Co., Ltd.) F-4: ME-3606SG (product name, manufactured by Showa Denko Materials Co., Ltd.) F-5: A photosensitive element manufactured by increasing the amount of MKG (Malachite Green) of RY-5115 (product name, manufactured by Showa Denko Materials Co., Ltd.) by 10 times. (base material) S-1: Cu-sputtered PET film (manufactured by Geomatec Co., Ltd., thickness: 125 μm, Ra < 50 nm) S-2: GL-102 (Ajinomoto Fine-Techno Co., Ltd., product name, Ra: approx. 100 nm) S-3: MCL-E67 (Showa Denko Materials Co., Ltd., product name, Ra: approx. 300 nm)

[0099] 2. Preparation of Laminate In Examples 1 to 5, 7, and 8 to 11, S-1 stored under moisture-proof conditions was used as a substrate having a copper layer as a conductive layer. In Examples 6, 8, and Comparative Example 1, the substrate having a copper layer as a conductive layer was pickled and washed with water, dried with an air flow, and then heated to 80°C. Thereafter, in Examples 1 to 12 and Comparative Example 1, a photosensitive element was laminated (laminated) on the surface of the copper layer of the substrate. The lamination was performed using a heat roll at 110°C, with a pressure of 0.4 MPa and a roll speed of 1.0 m / min, so that the photosensitive layer of the photosensitive element was in contact with the surface of the copper layer of the substrate while peeling off the protective layer of the photosensitive element. In this way, the laminates of Examples 1 to 12 and Comparative Example 1, in which the substrate, the photosensitive layer, and the support were laminated in this order, were obtained. The obtained laminates were used as test pieces for the following tests.

[0100] 3. Fabrication of Patterned Substrates [Examples 1 to 7, 9 to 12 and Comparative Example 1] Using a glass chrome type photomask (for resolution evaluation or pattern inspection), the photosensitive layer was exposed to a predetermined amount of energy using a projection exposure device (manufactured by Ushio Inc., product name "UX-2240SM") with an ultra-high pressure mercury lamp (365 nm) as a light source (exposure treatment). The photomask used for resolution evaluation had a wiring pattern with a line width / space width of x / x (x: 1 to 30, unit: μm), and the photomask used for pattern inspection had a wiring pattern with a line width / space width of x / x (x: 10, 15, 20, unit: μm) (pattern area: 90 mm × 90 mm).

[0101] After the exposure, the support was peeled off to expose the photosensitive layer, and a 1% by mass aqueous solution of sodium carbonate at 30°C was sprayed for twice the shortest development time (the shortest time required to remove the unexposed portion) to remove the unexposed portion (development treatment). The substrate exposed using the photomask for resolution evaluation and subjected to the development treatment is called the pattern substrate for resolution evaluation, and the substrate exposed using the photomask for pattern inspection and subjected to the development treatment is called the pattern substrate for inspection. In the pattern substrate for resolution evaluation, the space portion (unexposed portion) was cleanly removed, and the line portion (exposed portion) was formed without any twisting, meandering, or chipping, and the resolution was evaluated based on the smallest line width / space width value.

[0102] [Example 8] The photosensitive layer was exposed to a predetermined amount of energy using a direct imaging exposure device (manufactured by Orbotech Japan, product name "Nuvogo Fine 8") with a semiconductor laser (375 nm and 405 nm mixed lines, wavelength ratio can be changed as desired (375 nm:405 nm = 0:100 to 100:0)) as a light source. After exposure, development was performed in the same manner as in Examples 1 to 7, 9 to 10, and Comparative Example 1 to prepare patterned substrates for evaluating resolution and patterned substrates for inspection.

[0103] 4. Coloring process The following treatment was carried out using the test pattern substrate.

[0104] [Example 1] Resin dye SDN Black (trade name, manufactured by Osaka Kasei Co., Ltd.) was diluted 20 times with water to prepare 300 ml of solution (liquid temperature: 25°C), and filled into a stainless steel tray with an outer diameter of 20 x 25 x 5 cm. The developed substrate was immersed in the solution and dyed for 3 hours while gently moving the substrate as necessary. After the specified time, it was pulled out, washed with water, and dried with an air blower.

[0105] [Example 2] The entire substrate after development was exposed to approximately 2.0 J using a parallel exposure machine (Oak Manufacturing Co., Ltd., product name "EXM-1201", 365 nm and 405 nm mixed lines). The temperature near the substrate surface during exposure was 31°C.

[0106] [Examples 3 to 9] Using a large UV irradiation device (manufactured by Oak Manufacturing Co., Ltd., product name "QRM-2317-F-00"), the developed substrate was conveyed on a conveyer at a conveyer speed with an exposure dose of about 0.5 J per time, and exposed. In Example 3, the exposure was performed once, and the exposure dose was 0.5 J. The temperature near the substrate surface during exposure in Example 3 was 35°C. In Examples 4 and 6-8, the exposure was performed twice, and the total exposure dose was 1 J. The temperature near the substrate surface during exposure in Examples 4 and 6-8 was 50°C. In Examples 5 and 9, the exposure was performed three times, and the total exposure dose was 1.5 J. The temperature near the substrate surface during exposure in Example 5 was 35°C. The temperature near the substrate surface during exposure in Examples 5 and 9 was 62°C.

[0107] 5.Transmittance measurement (after coloring treatment) The photosensitive element F-1 was laminated on the surface of a slide glass (manufactured by Matsunami Glass Industry Co., Ltd., product name "White Slide Glass Cut No. 1 S1126"). The lamination was performed by peeling off the protective layer, so that the photosensitive layer of the photosensitive element was in contact with the surface of the slide glass, using a heat roll at 110°C, with a pressure of 0.2 MPa and a roll speed of 1.0 m / min. After the photosensitive layer was laminated on the slide glass, exposure processing and coloring processing were performed under the same conditions as when the patterned substrate was prepared, and the support was peeled off to prepare a sample for transmittance measurement. The absorbance of the photosensitive layer was measured using a U-3310 spectrophotometer (manufactured by Hitachi High-Tech Science Co., Ltd., measurement conditions: wavelength range: 330 to 700 nm, scan speed: 300 nm / min, scan interval: 0.50 nm). Baseline measurement was performed using untreated slide glass as a reference and sample. From the obtained measured spectrum, the absorbance at the wavelength (635 nm) of the test light was recorded, and the transmittance of the test light was calculated.

[0108] 6. Visual inspection of resist patterns In Examples 1 to 12, defects in the resist pattern were detected using AOI Ultra Fusion 600 (trade name, manufactured by Orbotech Japan Co., Ltd.) as the visual inspection of the resist pattern. The panel polarity was set to negative, the light intensity was 120 for regular reflection light and 60 for diffuse reflection light, and only red light was used. In Comparative Example 1, defects in the resist pattern were observed using SEM SU-1500 (trade name, manufactured by Hitachi High-Technologies Corporation) as the visual inspection of the resist pattern. At this time, the acceleration voltage was 15 kV and the current value was 10 μA. Then, the time of the visual inspection was evaluated for Examples 1 to 12 and Comparative Example 1, and the pattern detection rate of defects in the resist pattern was also evaluated for Examples 1 to 12. The pattern detection rate refers to the probability that the inspection device was able to identify the contour of the resist pattern and recognize the pattern when performing the visual inspection. That is, before performing the visual inspection, the inspection device sets an appropriate gray level (bright / dark binarization threshold) for each of Examples 1 to 12, and if this setting is completed, it is judged as OK, and if this setting is not completed and an error occurs, it is judged as NG. In addition, in the evaluation of the pattern detection rate of defects in the resist pattern, if it was OK every time, it was judged as A, if it was not OK every time but the probability of it being NG was low, it was judged as B, and if the probability of it being NG was high, it was judged as C. In the evaluation of the time for the visual inspection, it was judged as 10 min / cm 2 Less than 10 min / cm 2 More than 5000 minutes / 100cm 2 B: Less than 5000 min / 100 cm 2 The above was rated C.

[0109] [Table 1]

[0110] 7. Evaluation As shown in Table 1, in Examples 1 to 12, the inspection time was significantly reduced compared to Comparative Example 1. From these results, it was confirmed that by visually inspecting the resist pattern based on the reflected light from the substrate on which the resist pattern is formed, defects in the resist pattern can be detected in a shorter time than in visual inspection using an SEM.

[0111] Moreover, the pattern detection rate was higher in Examples 1 to 10 than in Examples 11 and 12. From these results, it was confirmed that in visual inspection of a resist pattern based on reflected light from a substrate on which a resist pattern is formed, coloring the resist pattern makes it easier to detect the contour of the resist pattern, thereby increasing the inspection accuracy. [Explanation of symbols]

[0112] 1...substrate, 1a...insulating layer, 1b...conductor layer, 2...photosensitive layer, 2a...photocured portion, 2b...uncured portion, 3...support, 4...laminated body, 5...photomask, 6...resist pattern, 7...foreign matter, 8...defect, 9...conductor pattern, 10...contour, 11...pattern data.

Claims

1. a resist pattern forming step of forming a resist pattern on a substrate; a color development step of coloring the resist pattern after the resist pattern formation step; and a visual inspection step of visually inspecting the resist pattern based on light reflected from the substrate on which the resist pattern is formed, In the color-developing step, the resist pattern is exposed to light in order to develop a color of the resist pattern. A method for inspecting a resist pattern.

2. A resist pattern forming step of forming a resist pattern on a substrate; a color development step of coloring the resist pattern after the resist pattern formation step; and a visual inspection step of visually inspecting the resist pattern based on light reflected from the substrate on which the resist pattern is formed, In the color-developing step, the resist pattern is heated to develop a color of the resist pattern. A method for inspecting a resist pattern.

3. A resist pattern forming step of forming a resist pattern on a substrate; a color development step of coloring the resist pattern after the resist pattern formation step; and a visual inspection step of visually inspecting the resist pattern based on light reflected from the substrate on which the resist pattern is formed, In the color-developing step, the temperature of the resist pattern is set to 35° C. or higher and 150° C. or lower in order to develop the color of the resist pattern. A method for inspecting a resist pattern.

4. A resist pattern forming step of forming a resist pattern on a substrate; a color development step of coloring the resist pattern after the resist pattern formation step; and a visual inspection step of visually inspecting the resist pattern based on light reflected from the substrate on which the resist pattern is formed, In the resist pattern forming step, the resist pattern is formed containing a photocoloring agent that reacts with light to develop a color. A method for inspecting a resist pattern.

5. In the appearance inspection step, a contour of the resist pattern is detected based on reflected light from a substrate, and the resist pattern is appearance inspected based on the detected contour. The method for inspecting a resist pattern according to any one of claims 1 to 4.

6. In the appearance inspection step, the detected contour is compared with pattern data for forming the resist pattern.

6. The method for inspecting a resist pattern according to claim 5.

7. In the appearance inspection step, a line width of the resist pattern is measured based on the detected contour.

6. The method for inspecting a resist pattern according to claim 5.

8. In the color development step, the resist pattern is dyed to develop a color. The method for inspecting a resist pattern according to any one of claims 1 to 7.

9. In the resist pattern forming step, the resist pattern is formed to a thickness of 1 μm or more and 100 μm or less. The method for inspecting a resist pattern according to any one of claims 1 to 8.

10. a resist pattern forming step of forming a resist pattern on a substrate; A color development step of coloring the resist pattern after the resist pattern formation step, In the color-developing step, the resist pattern is exposed to light in order to develop a color of the resist pattern. A method for producing a resist pattern.

11. a resist pattern forming step of forming a resist pattern on a substrate; A color development step of coloring the resist pattern after the resist pattern formation step, In the resist pattern forming step, the resist pattern is formed containing a photocoloring agent that reacts with light to develop a color. A method for producing a resist pattern.

12. In the color-developing step, the resist pattern is heated to develop a color of the resist pattern. The method for producing a resist pattern according to claim 10 or 11.

13. In the color-developing step, the temperature of the resist pattern is set to 35° C. or higher and 150° C. or lower in order to develop the color of the resist pattern. The method for producing a resist pattern according to any one of claims 10 to 12.

14. In the resist pattern forming step, the resist pattern is formed to a thickness of 1 μm or more and 100 μm or less. The method for producing a resist pattern according to any one of claims 10 to 13.

15. a resist pattern forming step of forming a resist pattern on a substrate; a color development step of coloring the resist pattern after the resist pattern formation step; an appearance inspection step of inspecting the appearance of the resist pattern based on reflected light from the substrate on which the resist pattern is formed; an evaluation step of evaluating the resist pattern based on the appearance inspection in the appearance inspection step, In the color-developing step, the resist pattern is exposed to light in order to develop a color of the resist pattern. Board selection method.

16. A resist pattern forming step of forming a resist pattern on a substrate; a color development step of coloring the resist pattern after the resist pattern formation step; an appearance inspection step of inspecting the appearance of the resist pattern based on reflected light from the substrate on which the resist pattern is formed; an evaluation step of evaluating the resist pattern based on the appearance inspection in the appearance inspection step, In the color-developing step, the resist pattern is heated to develop a color of the resist pattern. Board selection method.

17. A resist pattern forming step of forming a resist pattern on a substrate; a color development step of coloring the resist pattern after the resist pattern formation step; an appearance inspection step of inspecting the appearance of the resist pattern based on reflected light from the substrate on which the resist pattern is formed; an evaluation step of evaluating the resist pattern based on the appearance inspection in the appearance inspection step, In the color-developing step, the temperature of the resist pattern is set to 35° C. or higher and 150° C. or lower in order to develop the color of the resist pattern. Board selection method.

18. A resist pattern forming step of forming a resist pattern on a substrate; a color development step of coloring the resist pattern after the resist pattern formation step; an appearance inspection step of inspecting the appearance of the resist pattern based on reflected light from the substrate on which the resist pattern is formed; an evaluation step of evaluating the resist pattern based on the appearance inspection in the appearance inspection step, In the resist pattern forming step, the resist pattern is formed containing a photocoloring agent that reacts with light to develop a color. Board selection method.

19. In the evaluation step, the resist pattern is evaluated based on the number or shape of defects in the resist pattern. The substrate selection method according to any one of claims 15 to 18.

20. The method includes a conductive pattern forming step of forming a conductive pattern by etching or plating the substrate in which the evaluation of the resist pattern in the substrate selection method according to any one of claims 15 to 19 satisfies a criterion. A method for manufacturing a printed wiring board.

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