Optical semiconductor device

Abstract

An optical semiconductor device according to the present disclosure comprises: a stem having a first surface and a second surface on the reverse side from the first surface; a semiconductor laser provided on the first-surface-side of the stem; a lead pin that traverses the stem from the first surface to the second surface; and a heat dissipation block that has a third surface and a fourth surface on the reverse side from the third surface, the third surface contacting the second surface of the stem, wherein a groove that is a notch in a side surface connecting the third surface and the fourth surface and traverses from the third surface to the fourth surface is formed in the heat dissipation block, an insulating film is provided on the inner surfaces forming the groove in the heat dissipation block, and the lead pin is inserted into the groove in the heat dissipation block.

Description

[Technical field]

[0001] The present disclosure relates to optical semiconductor devices. [Background technology]

[0002] Patent Document 1 discloses a laser package in which a laser is hermetically sealed in a package consisting of a package base and a cap. The laser is fixed to the package base. A plurality of wiring pins, including a power supply wiring pin that supplies a drive current to the laser, are drawn out from the package base. A heat dissipation member having a higher thermal conductivity than the package base is attached to the bottom surface of the package base. The heat dissipation member has one or more insertion holes through which the wiring pins are inserted. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2007-27413 A Summary of the Invention [Problem to be solved by the invention]

[0004] As optical elements become higher in output and faster in operation, the amount of heat generated by the semiconductor laser chip, driving IC chip, and Peltier element for cooling the chip built into the package increases. If the temperature of the laser chip rises with the increase in heat generation, it may cause a decrease in optical output, degradation of high-speed optical signals, and failure of the laser chip.

[0005] As a solution to this problem, a configuration in which the heat dissipation block is in contact with the side surface of the stem and the side surface of the lens cap can be considered. However, in such a configuration, the heat dissipation path is likely to be longer than a configuration in which the heat dissipation block is disposed on the rear surface of the stem. In addition, it is difficult to increase the contact area between the heat dissipation block and the stem, and there is a risk of the heat dissipation efficiency being reduced. In Patent Document 1, the heat dissipation distance can be shortened by contacting the heat dissipation block with the rear surface of the stem. However, since the lead pin is inserted through the insertion hole formed in the heat dissipation block, there is a risk of restrictions being imposed on the mounting method or assembly sequence of the heat dissipation block. In addition, high processing accuracy may be required for the position and dimensions of the insertion hole, and for the formation of the insulator that covers the inside of the insertion hole.

[0006] An object of the present disclosure is to provide an optical semiconductor device that can be easily manufactured. [Means for solving the problem]

[0007] The optical semiconductor device according to the first disclosure comprises a stem having a first surface and a second surface opposite the first surface, a semiconductor laser provided on the first surface side of the stem, a lead pin penetrating the stem from the first surface to the second surface, and a heat dissipation block having a third surface and a fourth surface opposite the third surface, the third surface being in contact with the second surface of the stem, wherein the heat dissipation block has a side surface connecting the third surface and the fourth surface cut out and a groove penetrating from the third surface to the fourth surface is formed, an insulating film is provided on an inner surface of the heat dissipation block that forms the groove, and the lead pin is inserted into the groove of the heat dissipation block.

[0008] The optical semiconductor device of the second disclosure comprises a stem having a first surface and a second surface opposite the first surface, a semiconductor laser provided on the first surface side of the stem, a plurality of lead pins penetrating the stem from the first surface to the second surface, and a heat dissipation block having a third surface and a fourth surface opposite the third surface, the third surface being in contact with the second surface of the stem, an insulating film being provided on a side of the heat dissipation block connecting the third surface and the fourth surface, and the heat dissipation block extending from the center of the second surface of the stem through between the plurality of lead pins. Effect of the Invention

[0009] In the optical semiconductor device according to the first disclosure, the heat dissipation block has a groove formed by cutting out a side surface connecting the third surface and the fourth surface and penetrating from the third surface to the fourth surface. The lead pin is inserted into the groove. This makes it easy to attach the heat dissipation block to the stem, and the optical semiconductor device can be easily manufactured. In the optical semiconductor device according to the second disclosure, the heat dissipation block extends from the center of the second surface of the stem through between the lead pins, which eliminates the need to form an insertion hole in the heat dissipation block and makes it easy to manufacture the optical semiconductor device. [Brief description of the drawings]

[0010] [Figure 1] 1 is a cross-sectional view of an optical semiconductor device according to a first embodiment. [Diagram 2] 1 is a cross-sectional view of an optical semiconductor device according to a first embodiment. [Diagram 3] 1 is a cross-sectional view of an optical semiconductor device according to a first modified example of the first embodiment. [Figure 4] 11 is a cross-sectional view of an optical semiconductor device according to a second modification of the first embodiment. FIG. [Diagram 5] FIG. 11 is a cross-sectional view of an optical semiconductor device according to a second embodiment. [Figure 6] FIG. 11 is a cross-sectional view of an optical semiconductor device according to a second embodiment. [Figure 7] FIG. 11 is a cross-sectional view of an optical semiconductor device according to a third embodiment. [Figure 8]FIG. 11 is a cross-sectional view of an optical semiconductor device according to a third embodiment. [Figure 9] FIG. 13 is a cross-sectional view of an optical semiconductor device according to a modified example of the third embodiment. [Figure 10] FIG. 11 is a cross-sectional view of an optical semiconductor device according to a fourth embodiment. [Figure 11] FIG. 11 is a perspective view of a heat dissipation block according to a fourth embodiment. [Figure 12] FIG. 11 is a cross-sectional view of an optical semiconductor device according to a fifth embodiment. [Figure 13] FIG. 13 is a perspective view of a heat dissipation block according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] An optical semiconductor device according to each embodiment will be described with reference to the drawings. The same or corresponding components are designated by the same reference numerals, and repeated description may be omitted.

[0012] Embodiment 1 1 and 2 are cross-sectional views of an optical semiconductor device 100 according to a first embodiment. In the following description, a plane perpendicular to an emission light direction 81 of the optical semiconductor device 100 is referred to as an XY plane, and a direction parallel to the emission light direction 81 is referred to as a Z direction. The optical semiconductor device 100 includes a stem 10 having a first surface 11 and a second surface 12 opposite to the first surface 11. A semiconductor laser 16 is provided on the first surface 11 side of the stem 10. FIG. 1 is a YZ cross-sectional view passing through the center of the stem 10. FIG. 2 is a view of an XY cross-section obtained by cutting FIG. 1 along a straight line AB, as viewed from the second surface 12 side of the stem 10.

[0013] The plurality of lead pins 30 penetrate the stem 10 from the first surface 11 to the second surface 12. The stem 10 and the lead pins 30 are formed of a metal including iron or the like. The surfaces of the stem 10 and the lead pins 30 may be gold-plated. The stem 10 is, for example, disk-shaped with a diameter of about 5.6 mm and a thickness of about 1.2 mm. The lead pins 30 have a diameter of, for example, 0.4 mm. A portion of the lead pins 30 with a length of about 15 mm is drawn out from the second surface 12 side of the stem 10. A sealing material 32 made of an insulating material such as glass is filled between the stem 10 and the lead pins 30. This electrically insulates the stem 10 and the lead pins 30. The plurality of lead pins 30 may include one that is electrically shorted to the stem 10.

[0014] A mounting block 14 made of a metal material is mounted on the first surface 11 of the stem 10. A semiconductor laser 16 is mounted on the mounting block 14 so as to emit light in the Z direction. The semiconductor laser 16 is, for example, an end-emitting laser chip. The semiconductor laser 16 may be a surface-emitting laser or an LED as long as it is a light-emitting element. The semiconductor laser 16 and the lead pin 30 are electrically connected using a gold wire or a wiring board (not shown). The semiconductor laser 16 can be operated by injecting a current from the lead pin 30.

[0015] A cylindrical lens barrel 34 made of metal is welded to the first surface 11 of the stem 10. A glass lens 36 is attached to the tip of the lens barrel 34. The lens barrel 34 and the glass lens 36 cover and seal the mounting block 14 and the semiconductor laser 16.

[0016] The heat dissipation block 20 has a third surface 23 and a fourth surface 24 opposite to the third surface 23, and the third surface 23 contacts the second surface 12 of the stem 10. In FIG. 2, the position of the stem 10 is indicated by a broken line. The heat dissipation block 20 is formed of metal. In the heat dissipation block 20, a side surface 21 connecting the third surface 23 and the fourth surface 24 is cut out, and a groove 26 penetrating from the third surface 23 to the fourth surface 24 is formed. A plurality of lead pins 30 are inserted into the groove 26. The groove 26 is formed so that the heat dissipation block 20 does not interfere with the lead pins 30. In the example of FIG. 2, the groove 26 of the heat dissipation block 20 is rectangular, but may be polygonal or U-shaped. The depth of the groove 26 from the side surface 21 is, for example, equal to or greater than the interval between the plurality of lead pins 30. The outer periphery of the second surface 12 of the stem 10 contacts the third surface 23 of the heat dissipation block 20.

[0017] An insulating film 28 such as polyimide is provided on the inner surface of the heat dissipation block 20 that forms the groove 26. This makes it possible to prevent electrical conduction between the lead pins 30 and the heat dissipation block 20 even if the lead pins 30 and the heat dissipation block 20 come into contact with each other.

[0018] Next, the operation of the optical semiconductor device 100 will be described. When the lead pin 30 is connected to a power source and current is injected, the semiconductor laser 16 emits laser oscillation light. The laser oscillation light passes through the glass lens 36 and is emitted in the Z direction. At this time, heat is generated in the semiconductor laser 16 along with laser oscillation. As shown by the arrow 80, this heat escapes from the mounting block 14, which has high thermal conductivity, through the stem 10. At this time, by arranging the heat dissipation block 20 so as to be in contact with the second surface 12 of the stem 10, the heat can be released from the second surface 12 to the heat dissipation block 20 through a short heat dissipation path. This makes it possible to suppress an excessive rise in the temperature of the semiconductor laser 16 when current is injected. Therefore, it is possible to suppress a decrease in the optical output characteristics and reliability.

[0019] In general, the package is often assembled so that the light emitting point of the semiconductor laser 16, which is the heat source, is located near the center of the stem 10. For this reason, when the heat dissipation block 20 contacts the stem 10 in an area close to the center of the second surface 12 of the stem 10, the heat dissipation efficiency can be improved.

[0020] Next, the effect of the optical semiconductor device 100 according to the first embodiment will be described. FIG. 3 is a cross-sectional view of an optical semiconductor device 200 according to a first modified example of the first embodiment. In the optical semiconductor device 200, a flexible substrate 40 is connected to the lead pins 30 on the fourth surface 24 side of the heat dissipation block 20. A plurality of holes for inserting the lead pins 30 are formed in the flexible substrate 40. The flexible substrate 40 also has electrical wiring such as a wiring pattern. As a comparative example of this embodiment, a structure in which the heat dissipation block is provided with insertion holes for the lead pins 30 is considered. In the comparative example, the heat dissipation block needs to be attached in the Z direction from the second surface 12 side of the stem 10. For this reason, in the comparative example, the heat dissipation block needs to be attached before the flexible substrate 40 is attached to the lead pins 30.

[0021] On the other hand, the heat dissipation block 20 according to the first embodiment can be attached to the stem 10 from two directions, the Z direction and the X direction. Therefore, in this embodiment, it is also possible to attach the heat dissipation block 20 to the stem 10 after the flexible substrate 40 is attached to the lead pins 30. In this way, in this embodiment, it is possible to increase the degree of freedom in the attachment method or assembly sequence of the heat dissipation block 20, and to improve the flexibility of the manufacturing process.

[0022] In the above-mentioned comparative example, if the size or position of the insertion hole of the heat dissipation block is misaligned, the lead pin 30 may bend. Also, interference between the heat dissipation block and the lead pin 30 may make it impossible to attach the heat dissipation block. Furthermore, the inside of the insertion hole, which has a diameter of about several mm, needs to be covered with an insulator. For the above reasons, high processing accuracy is required, and the processing cost of the heat dissipation block may increase. In contrast, in the present embodiment, it is not necessary to form an insertion hole in the heat dissipation block 20 and to form an insulator on the inside of the insertion hole. Therefore, high processing accuracy is not required, and the manufacturing cost can be suppressed.

[0023] Also, in this embodiment, since it is sufficient to insert the lead pins 30 into the grooves 26, the heat dissipation block 20 and the lead pins 30 can be easily aligned. This makes it easy to attach the heat dissipation block 20 to the stem 10. This makes it possible to reduce assembly costs. In this manner, in this embodiment, the optical semiconductor device 100 can be easily manufactured. Furthermore, the heat dissipation block 20 of this embodiment can be manufactured using less metal material than the heat dissipation block having insertion holes according to the comparative example. This makes it possible to reduce material costs.

[0024] 4 is a cross-sectional view of an optical semiconductor device 300 according to a second modification of the first embodiment. The optical semiconductor device 300 differs from the optical semiconductor device 100 in the structure of the heat dissipation block 320. The other configurations are similar to those of the optical semiconductor device 100. The heat dissipation block 320 may be formed with a plurality of grooves 26 in accordance with the arrangement of the lead pins 30. In the optical semiconductor device 300, the contact area between the stem 10 and the heat dissipation block 320 can be made larger than that in the optical semiconductor device 100. Therefore, the heat dissipation efficiency can be improved.

[0025] The shapes of the heat dissipation block 20 and the grooves 26 in this embodiment are not limited to those shown in Figures 1 to 4. The heat dissipation block 20 may be rectangular, polygonal, circular, elliptical, or the like when viewed from the Z direction. The grooves 26 are not limited to being rectangular, but may be polygonal or U-shaped, or the like. Furthermore, the number of lead pins 30 is not limited.

[0026] The above-mentioned modifications can be appropriately applied to the optical semiconductor devices according to the following embodiments. Note that the optical semiconductor devices according to the following embodiments have many points in common with the first embodiment, so the following description will focus on the differences from the first embodiment.

[0027] Embodiment 2 5 and 6 are cross-sectional views of an optical semiconductor device 400 according to the second embodiment. FIG. 5 is a YZ cross-sectional view passing through the center of the stem 10. FIG. 6 is a view of an XY cross-section obtained by cutting FIG. 5 along a straight line CD, viewed from the second surface 12 side of the stem 10. The optical semiconductor device 400 differs from the optical semiconductor device 100 in the structure of the heat dissipation block 420. The other configurations are similar to those of the optical semiconductor device 100. In the side surface 21 of the heat dissipation block 420, the groove 26 is formed so that the Y direction is the depth direction. In other words, the groove 26 opens toward the negative direction of the Y axis.

[0028] In general, the semiconductor laser 16 is disposed so that light is emitted from the center of the XY plane of the stem 10. For this reason, the mounting block 14 on which the semiconductor laser 16 is mounted is often disposed at a position offset from the center of the stem 10. In the present embodiment as well, the mounting block 14 on which the semiconductor laser 16 is mounted is provided at a position offset to one side from the center of the stem 10 on the first surface 11 of the stem 10. The one side is the positive direction of the Y axis in FIG. 5.

[0029] The bottom of groove 26 in heat dissipation block 420 is provided on one side, i.e., the positive Y-axis side. This makes it possible to reduce the distance between the bottom of groove 26 in heat dissipation block 420 and mounting block 14. In this embodiment, the contact portion between second surface 12 of stem 10 and heat dissipation block 420 is closer to mounting block 14, so that the heat dissipation path from semiconductor laser 16 to heat dissipation block 420 can be shortened as shown by arrow 82. This makes it possible to improve heat dissipation efficiency.

[0030] Embodiment 3 7 and 8 are cross-sectional views of an optical semiconductor device 500 according to the third embodiment. The optical semiconductor device 500 differs from the optical semiconductor device 100 in the structure of the heat dissipation block 520. The other configurations are similar to those of the first embodiment. Fig. 7 is a YZ cross-sectional view passing through the center of the stem 10. Fig. 8 is a view of the XY cross-section obtained by cutting Fig. 7 along line EF, as viewed from the second surface 12 side of the stem 10.

[0031] As in the first embodiment, the third surface 23 of the heat dissipation block 520 is in contact with the second surface 12 of the stem 10. The heat dissipation block 520 has a shape that allows it to be placed in the center of the second surface 12 of the stem 10, for example, by threading between the multiple lead pins 30. In other words, the heat dissipation block 520 extends from the center of the second surface 12 of the stem 10 through between the multiple lead pins 30. The heat dissipation block 520 is, for example, a rectangular parallelepiped. In other words, the heat dissipation block 520 is rectangular when viewed from a direction perpendicular to the second surface 12.

[0032] An insulating film 28 such as polyimide is provided on the side surface 21 of the heat dissipation block 520 connecting the third surface 23 and the fourth surface 24. The insulating film 28 is provided to prevent electrical conduction between the lead pins 30 and the heat dissipation block 520. It is sufficient that the insulating film 28 is provided on the surface of the side surface 21 facing the lead pins 30.

[0033] In the present embodiment, the same effects as those in the first embodiment can be obtained. 5 00 can be easily manufactured, and material costs can be reduced. Furthermore, in this embodiment, there is no need to process grooves in the heat dissipation block 520. This makes it possible to reduce processing costs. Also, in this embodiment, the heat dissipation block 520 can be disposed in the center of the stem 10, so that the heat dissipation path from the semiconductor laser 16 to the heat dissipation block 520 can be shortened as shown by the arrow 83. Therefore, heat can be efficiently dissipated.

[0034] The heat dissipation block 520 may have any shape as long as it does not interfere with the lead pins 30, and may be cylindrical or have an uneven shape. The heat dissipation block 520 may be disposed directly below the mounting block 14. FIG. 9 is a cross-sectional view of an optical semiconductor device 600 according to a modification of the third embodiment. The optical semiconductor device 600 includes a heat dissipation block 620. The heat dissipation block 620 is cross-shaped when viewed from a direction perpendicular to the second surface 12. The heat dissipation block 620 can enlarge the contact area between the stem 10 and the heat dissipation block 620 compared to the heat dissipation block 520. This can improve the heat dissipation efficiency. On the other hand, the heat dissipation block 620 can be attached to the stem 10 only from the Z direction. This causes limitations in the manufacturing process compared to the first embodiment.

[0035] Similarly to the first embodiment, the flexible substrate 40 may be connected to the plurality of lead pins 30 on the fourth surface 24 side of the heat dissipation block 520 .

[0036] Embodiment 4 FIG. 10 is a cross-sectional view of an optical semiconductor device 700 according to the fourth embodiment. FIG. 11 is a perspective view of a heat dissipation block 720 according to the fourth embodiment. The optical semiconductor device 700 differs from the optical semiconductor device 100 in the structure of the heat dissipation block 720. The other configurations are the same as those of the first embodiment. The heat dissipation block 720 is, for example, semicircular when viewed from the Z direction. The heat dissipation block 720 has a groove 26 through which the lead pin 30 passes, similar to the heat dissipation block 20. Furthermore, the heat dissipation block 720 has a step portion 722 that extends from the third surface 23 toward the stem 10 and contacts the side surface 13 connecting the first surface 11 and the second surface 12 of the stem 10. The step portion 722 has a height d from the third surface 23.

[0037] In this embodiment, the same effect as in the first embodiment can be obtained. Furthermore, the heat dissipation block 720 contacts the second surface 12 and the side surface 13 of the stem 10. Therefore, as shown by the arrow 84, a heat dissipation path from the side surface of the stem 10 to the heat dissipation block 720 is added, so that heat can be dissipated more efficiently. When the height d is equal to or greater than the thickness of the stem 10, the contact area between the step portion 722 and the side surface 13 of the stem 10 is maximized, and heat dissipation is also maximized. However, even if the height d is smaller than the thickness of the stem 10, a certain level of heat dissipation can be obtained. In addition, the step portion 722 also functions as an assembly guide. The step portion 722 can determine the positional relationship between the stem 10 and the heat dissipation block 720, and assembly misalignment can be suppressed.

[0038] Embodiment 5. FIG. 12 is a cross-sectional view of an optical semiconductor device 800 according to the fifth embodiment. FIG. 13 is a perspective view of a heat dissipation block according to the fifth embodiment. The optical semiconductor device 800 differs from the optical semiconductor device 500 in the structure of a heat dissipation block 820. The other configurations are the same as those of the third embodiment. In this embodiment, the step portion of the fourth embodiment is provided in the heat dissipation block of the third embodiment. The heat dissipation block 820 extends from the center of the second surface 12 of the stem 10 through between the multiple lead pins 30. The heat dissipation block 820 has a step portion 822 that extends from the third surface 23 toward the stem 10 and contacts the side surface 13 of the stem 10.

[0039] The heat dissipation block 820 contacts the second surface 12 and the side surface 13 of the stem 10. Therefore, compared to the third embodiment, the present embodiment can dissipate heat more efficiently. Compared to the fourth embodiment, the center of the stem 10 close to the semiconductor laser 16 contacts the heat dissipation block 820 in the present embodiment, so that heat can be dissipated more efficiently from the second surface 12 of the stem 10. On the other hand, compared to the fourth embodiment, the contact area between the side surface 13 of the stem 10 and the step portion 822 in the present embodiment is smaller. Therefore, the heat dissipation efficiency from the side surface 13 of the stem 10 is higher in the fourth embodiment. Also, as in the fourth embodiment, the step portion 822 in the present embodiment can suppress assembly misalignment.

[0040] The technical features described in each embodiment may be used in appropriate combination. [Explanation of symbols]

[0041] 10 stem, 11 first surface, 12 second surface, 13 side surface, 14 mounting block, 16 semiconductor laser, 20 heat dissipation block, 21 side surface, 23 third surface, 24 fourth surface, 26 groove, 28 insulating film, 30 lead pin, 32 sealing material, 34 lens barrel, 36 glass lens, 40 flexible substrate, 100 optical semiconductor device, 200 optical semiconductor device, 300 optical semiconductor device, 320 heat dissipation block, 400 optical semiconductor device, 420 heat dissipation block, 500 optical semiconductor device, 520 heat dissipation block, 600 optical semiconductor device, 620 heat dissipation block, 700 optical semiconductor device, 720 heat dissipation block, 722 step portion, 800 optical semiconductor device, 820 heat dissipation block, 822 step portion

Claims

1. a stem having a first surface and a second surface opposite the first surface; a semiconductor laser provided on the first surface side of the stem; a lead pin penetrating the stem from the first surface to the second surface; a heat dissipation block having a third surface and a fourth surface opposite to the third surface, the third surface being in contact with the second surface of the stem; Equipped with a side surface of the heat dissipation block that connects the third surface and the fourth surface is cut out, and a groove is formed that penetrates from the third surface to the fourth surface; An insulating film is provided on the inner surface of the heat dissipation block that forms the groove, The optical semiconductor device according to claim 1, wherein the lead pin is inserted into the groove of the heat dissipation block.

2. a mounting block provided on the first surface at a position offset to one side from a center of the stem, the mounting block having the semiconductor laser mounted thereon; 2. The optical semiconductor device according to claim 1, wherein the bottom of the groove is provided on the one side.

3. 3. The optical semiconductor device according to claim 1, wherein the heat dissipation block has a plurality of the grooves formed therein.

4. 3. The optical semiconductor device according to claim 1, wherein the heat dissipation block has a step portion extending from the third surface toward the stem and contacting a side surface connecting the first surface and the second surface of the stem.

5. 3. The optical semiconductor device according to claim 1, further comprising a flexible substrate connected to the lead pins on the fourth surface side of the heat dissipation block.

6. a stem having a first surface and a second surface opposite the first surface; a semiconductor laser provided on the first surface side of the stem; a plurality of lead pins penetrating the stem from the first surface to the second surface; a heat dissipation block having a third surface and a fourth surface opposite to the third surface, the third surface being in contact with the second surface of the stem; Equipped with an insulating film is provided on a side surface of the heat dissipation block connecting the third surface and the fourth surface; the heat dissipation block extends from a center of the second surface of the stem through spaces between the lead pins,

7. The optical semiconductor device according to claim 6 , wherein the heat dissipation block has a rectangular shape when viewed in a direction perpendicular to the second surface.

8. The optical semiconductor device according to claim 6 , wherein the heat dissipation block has a cross shape when viewed from a direction perpendicular to the second surface.

9. 9. The optical semiconductor device according to claim 6, wherein the heat dissipation block has a step portion extending from the third surface toward the stem and contacting a side surface connecting the first surface and the second surface of the stem.

10. 9. The optical semiconductor device according to claim 6, further comprising a flexible substrate connected to the plurality of lead pins on the fourth surface side of the heat dissipation block.

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