Quartz crystal oscillator and method for manufacturing the same

Abstract

To provide a crystal oscillator.SOLUTION: A crystal oscillator contains: an oscillation main body 2; a top electrode layer 3; a bottom electrode layer 4; and at least one magnetic layer 5. The oscillation main body 2 comprises: a thin film part 21; at least one frame part 22; and a plurality of side surfaces 201. The thin film part 21 comprises an upper flat surface 211 and a lower flat surface 212 that exist on both surfaces that are opposite each other. The upper flat surface 211 includes an upper work area 2111 of which an interval is provided from the plurality of side surfaces 201 of the oscillation main body 2. The lower flat surface 212 includes a lower work area 2121 of which an interval is provided from the plurality of side surfaces 201 of the oscillation main body 2. The frame part 22 is configured to extend from the thin film part 21 to an upper side. The top electrode layer 3 comprises an upper work part 31 installed to the upper work area 2111. The bottom electrode layer 4 comprises a lower work part 41 that is installed to the lower work area 2121. The at least one magnetic layer 5 is not connected to the top electrode layer 3 each other, and covers the at least one frame part 22.SELECTED DRAWING: Figure 17

Description

[Technical field]

[0001] The present invention relates to an oscillator, and more particularly to a crystal oscillator and a method for manufacturing a crystal oscillator. [Background technology]

[0002] A quartz crystal unit is an element that generates a vibration frequency by utilizing the piezoelectric effect of the quartz crystal itself, and is widely used in various types of electronic products (e.g., communication equipment).

[0003] A conventional quartz crystal unit includes a quartz (quartz) substrate, a top electrode formed on the top surface of the quartz substrate, and a bottom electrode formed on the bottom surface of the quartz substrate. The bottom electrode extends from the bottom surface of the quartz substrate to the periphery of the quartz substrate, but for the convenience of electrical connection with the outside, engineers in this technical field tend to position the bottom electrode on the same surface as the top electrode.

[0004] It is also well known to developers, researchers and practitioners in this field that the thinner the quartz substrate, the higher the vibration frequency that is produced.

[0005] Therefore, in order to apply a quartz crystal unit to a high frequency band, it is necessary to thin the quartz crystal substrate to a thickness that allows the quartz crystal to vibrate at a required vibration frequency band.

[0006] As shown in FIGS. 1 and 2, Patent Document 1 discloses a vibration element 1 including a vibrator 11, a top excitation electrode 12, and a bottom excitation electrode 13.

[0007] The transducer 11 has a thin portion 111 having an upper work surface 1111 and a lower work surface 1112 , and a frame portion 112 that surrounds a portion of the thin portion 111 and is thicker than the thin portion 111 .

[0008] The top excitation electrode 12 comprises a top work electrode portion 121 installed on the upper work surface 1111 of the thin-walled portion 111, a top lead electrode portion 122 extending from the top work electrode portion 121 to the frame portion 112, and a top pad electrode 123 connected to one end of the top lead electrode portion 122.

[0009] The bottom excitation electrode 13 comprises a bottom work electrode portion 131 installed on the lower work surface 1112 of the thin-walled portion 111, a bottom lead electrode portion 132 extending from the bottom work electrode portion 131 to the frame portion 112, and a bottom pad electrode 133 connected to one end of the bottom lead electrode portion 132.

[0010] The vibration element 1 disclosed in Patent Document 1 has a thin wall portion 111 on which a top work electrode portion 121 and a bottom work electrode portion 131 are installed, and is used in a communication-type telecommunication product (not shown) that requires a high vibration frequency band. However, as described above, the top excitation electrode 12 and the bottom excitation electrode 13 are not located on the same plane, so when connecting the vibration element 1 of Patent Document 1 to the circuit board of an external communication-type telecommunication product, the circuit board of the communication-type telecommunication product needs to be electrically connected to the top pad electrode 123 of the top excitation electrode 12 via a bonding wire, which requires more manufacturing steps.

[0011] In addition, the method for forming the top excitation electrode 12 is mainly completed by a method combining a photolithography process and a thin film deposition process (hereinafter referred to as method 1), or by a method combining a metal mask and a thin film deposition process (hereinafter referred to as method 2).

[0012] It is well known that since the thickness of the thin portion 111 of the vibrator 11 is very thin, when the top excitation electrode 12 is formed by method 1, the thin portion 111 is easily damaged during the photolithography process.

[0013] Furthermore, when the top excitation electrode 12 is formed by method 2, the thickness of the frame portion 112 of the vibrator 11 is relatively thicker than that of the thin-walled portion 111. This increases the distance between a metal mask (not shown) that is placed directly above the vibrator 11 so as to cover the entire vibrator 11 and has an electrode opening corresponding to the contour of the top excitation electrode 12, and the portion of the thin-walled portion 111 where the top excitation electrode 12 is deposited. This causes an alignment error between the electrode opening of the metal mask and the portion of the thin-walled portion 111 where the top excitation electrode 12 is deposited, thereby reducing the accuracy of the size of the top excitation electrode 12 obtained by the thin-film deposition process.

[0014] Furthermore, when the vibration element 1 is moved to a circuit board for application in a telecommunication product, there is no other way than to move the vibrator 11 by clamping the frame portion 112 of the vibrator 11 with a mechanical arm. [Prior art documents] [Patent documents]

[0015] [Patent Document 1] Patent No. 6079280 Summary of the Invention [Problem to be solved by the invention]

[0016] According to the above description, it is a task for engineers in this technical field to improve the manufacturing method and structure of the quartz crystal unit on the premise of thinning the quartz crystal unit, increase the number of ways to transfer the quartz crystal unit to the circuit board, and solve problems such as alignment errors due to the thickness of the frame part and reduced precision of the electrode size.

[0017] SUMMARY OF THE PRESENT EMBODIMENT It is therefore an object of the present invention to provide a quartz crystal resonator that overcomes at least one of the problems of the prior art, and a method for manufacturing a quartz crystal resonator that overcomes at least one of the problems of the prior art. [Means for solving the problem]

[0018] In order to achieve the above object, the present invention provides: The piezoelectric element includes a vibrating body, a top electrode layer, a bottom electrode layer, and at least one magnetic layer; The vibration body includes a thin portion, at least one frame portion, and a plurality of side surfaces, the thinned portion has upper and lower planar surfaces on opposite sides; the upper plane has an upper work area spaced apart from the plurality of side surfaces of the vibration body; the lower plane has a lower work area spaced apart from the plurality of side surfaces of the vibration body; the frame portion is configured to extend upwardly away from the thin portion such that the side surfaces of the frame portion in the plurality of side surfaces are flush with the side surfaces of the thin portion in the plurality of side surfaces; the top electrode layer includes an upper work portion disposed on the upper work area; the bottom electrode layer includes a lower work portion disposed on the lower work area; The at least one magnetic layer is not connected to the top electrode layer and covers the at least one frame portion.

[0019] The present invention also provides a method for producing a semiconductor device comprising the steps of: Step a) of forming a bottom electrode layer on a lower surface of a piezoelectric substrate, the bottom electrode layer having a lower work portion spaced apart from a plurality of side surfaces of the piezoelectric substrate; Step b: attaching the lower surface of the piezoelectric substrate and the bottom electrode layer to a temporary substrate; After step b, a step c is performed by patterning the piezoelectric substrate from an upper surface opposite to the lower surface of the piezoelectric substrate to form a vibration body having a thin portion, at least one frame portion, and the plurality of side surfaces, the thin portion having an upper plane and a lower plane on opposite sides of each other, the upper plane having an upper work area spaced apart from the plurality of side surfaces of the vibration body and the at least one frame portion, the lower plane having a lower work area spaced apart from the plurality of side surfaces of the vibration body and on which the bottom electrode layer is disposed, and the frame portion is configured to extend upward away from the thin portion so that the side surface of the frame portion in the plurality of side surfaces is flush with the side surface of the thin portion in the plurality of side surfaces; a step d of installing a metal mask having a first inner annular surface defining an electrode opening exposing the upper work area of ​​the thin-walled portion, at least one second inner annular surface spaced apart from the first inner annular surface defining at least one positioning opening that can be inserted to be positioned on the at least one frame portion while exposing the at least one frame portion, and a lower surface facing the upper plane of the thin-walled portion, on the vibration body 2 such that the lower surface around the first inner annular surface is closer to the upper work area of ​​the thin-walled portion than the top surface of the frame portion, and the metal mask is positioned on the frame portion by inserting the frame portion into the corresponding positioning opening; e) forming a metal layer on the vibration body on which the metal mask is installed, to form a top electrode layer having an upper work part covering the upper work area of ​​the thin-walled part, and to form a magnetic layer covering the at least one frame part and not connected to the top electrode layer; and after step e, a step f of removing the temporary substrate to expose the bottom electrode layer. [Brief description of the drawings]

[0020] [Figure 1] FIG. 1 is a plan view showing a vibration element disclosed in Patent Document 1. [Diagram 2] 2 is a cross-sectional view taken along line II-II of FIG. 1. [Diagram 3] FIG. 2 is a front view illustrating step a in the embodiment of the method for manufacturing a quartz crystal resonator according to the present invention. [Figure 4] FIG. 4 is a plan view of FIG. [Diagram 5] FIG. 4 is a front view illustrating step b in the above embodiment. [Figure 6] FIG. 6 is a plan view of FIG. 5. [Figure 7] FIG. 11 is a front view illustrating step c in the above embodiment. [Figure 8] FIG. 8 is a plan view of FIG. [Figure 9] FIG. 2 is a perspective view showing a metal mask used in step d in the above embodiment. [Figure 10] FIG. 11 is a front view illustrating step d in the embodiment. [Figure 11] FIG. 11 is a front view illustrating step e in the above embodiment. [Figure 12] FIG. 12 is a left side view of FIG. [Figure 13] FIG. 4 is a plan view illustrating step f in the embodiment. [Figure 14] FIG. 14 is a left side view of FIG. 13. [Figure 15] FIG. 11 is a left side view illustrating step e′ in the above embodiment. [Figure 16] FIG. 16 is a plan view of FIG. [Figure 17] FIG. 2 is a perspective view showing a quartz crystal resonator manufactured according to the above embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] In order to more clearly describe the objectives, technical means and advantages of the embodiments of the present invention, the following will clearly and completely describe the technical means in the embodiments of the present invention in combination with the accompanying drawings of the embodiments of the present invention. It is clear that the described embodiments are only some embodiments of the present invention, and not all embodiments. Generally, the components of the embodiments of the present invention depicted and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the detailed description of the embodiments of the present invention provided below in the accompanying drawings does not constitute any limitation on the protection scope of the present invention, but only represents selected embodiments of the present invention.

[0022] Before describing the present invention in more detail, it should be noted that, where considered appropriate, reference numerals or terminal portions of reference numerals have been repeated among the figures to indicate corresponding or analogous elements, which may optionally have similar characteristics.

[0023] In describing the present invention, terms indicating orientations and positional relationships, such as "upper," "lower," "inner," "outer," "left," "right," "front," and "rear," are based on the orientations and positional relationships shown in the drawings or the orientations and positional relationships customarily placed when using the product of the present invention, for the purpose of easier and clearer description, and are not intended to teach or suggest that the corresponding apparatus or device has a specific orientation, a structure or operation in a specific orientation, etc., and are not intended to be limitations on the present invention.

[0024] Moreover, in describing the present invention, the terms "first", "second", etc. are used for distinguishing purposes only and do not teach or imply any relative importance.

[0025] An embodiment of the method for producing a quartz crystal resonator according to the present invention includes the following steps a to f.

[0026] As shown in Figures 3 and 4, step a is a step of forming a bottom electrode layer 4 on the lower surface 202 (upper in Figure 3) of the piezoelectric substrate 200, the bottom electrode layer 4 having a lower work portion 41 spaced apart from multiple side surfaces 201 of the piezoelectric substrate 200.

[0027] In this embodiment, a quartz substrate is described as an example of the piezoelectric substrate 200 .

[0028] As shown in FIGS. 5 and 6, step b is a step of attaching the lower surface 202 of the piezoelectric substrate 200 and the bottom electrode layer 4 to a temporary substrate 6.

[0029] In detail, in step b, the bottom electrode layer 4 faces the temporary substrate 6, and the lower surface 202 of the piezoelectric substrate 200 and the bottom electrode layer 4 are attached to the temporary substrate 6 using wax 7, a light peeling adhesive material or a heat peeling adhesive material.

[0030] In this embodiment, the lower surface 202 of the piezoelectric substrate 200 and the bottom electrode layer 4 are attached to the temporary substrate 6 using wax 7 in step b, but is not limited thereto.

[0031] As shown in Figures 7 and 8, step c is a step of patterning the piezoelectric substrate 200 from the upper surface 203, which is the opposite surface of the lower surface 202 of the piezoelectric substrate 200, after step b, to form a vibration body 2 having a thin portion 21, at least one frame portion 22, and multiple side surfaces 201.

[0032] The thinned portion 21 has an upper planar surface 211 and a lower planar surface 212 on opposite sides.

[0033] The upper plane 211 has an upper work area 2111 that is spaced apart from the multiple side surfaces 201 and at least one frame portion 22 of the vibration body 2 .

[0034] The lower plane 212 is spaced apart from the multiple side surfaces 201 of the vibration body 2 and has a lower work area 2121 on which the bottom electrode layer 4 is disposed.

[0035] The frame portion 22 is configured to extend upwardly away from the thin portion 21 such that the side surface 201 on the frame portion 22 in the plurality of side surfaces 201 is flush with the side surface 201 on the thin portion 21 in the plurality of side surfaces 201. In this embodiment, the frame portion 22 is configured such that the side surface 201 on the frame portion 22 in the plurality of side surfaces 201 is flush with the side surface 201 on the thin portion 21 in the plurality of side surfaces 201.

[0036] As shown in Figures 9 and 10, step d is a step of installing the metal mask 8 of Figure 9, which has a first inner ring surface 801 defining an electrode opening 8010 exposing the upper work area 2111 of the thin-walled portion 21, at least one second inner ring surface 802 spaced from the first inner ring surface 801 and defining at least one positioning opening 8020 that can be inserted so as to be positioned on at least one frame portion 22 while exposing at least one frame portion 22, and a lower surface 81 facing the upper plane 211 of the thin-walled portion 21, on the vibration body 2 so that the lower surface 81 around the first inner ring surface 801 is closer to the upper work area 2111 of the thin-walled portion 21 than the top surface of the frame portion 22 and the frame portion 22 is inserted into the corresponding positioning opening 8020 so that the metal mask 8 is positioned on the frame portion 22.

[0037] That is, when the metal mask 8 is placed on the vibration body 2 , the metal mask 8 is positioned by inserting the frame portion 22 into the positioning opening 8020 .

[0038] As shown in Figures 11 and 12, step e is a step of forming a metal layer on the vibration body 2 on which the metal mask 8 is installed, so as to form a top electrode layer 3 having an upper work portion 31 covering the upper work area 2111 of the thin-walled portion 21, and to form at least one magnetic layer 5 covering at least one frame portion 22 and not connected to the top electrode layer 3.

[0039] That is, as shown in Figures 11 and 12, the metal layer becomes a top electrode layer 3 that partially covers the metal mask 8, partially covers the upper work area 2111 of the thin-walled portion 21, and partially becomes at least one magnetic layer 5 that partially covers at least one frame portion 22.

[0040] In some embodiments, in step c, as shown in Figures 7 and 8, the vibration body 2 has two frame portions 22 on opposite sides of the thin-walled portion 21, and in step d, the metal mask 8 has two second inner ring surfaces 802 each defining a positioning opening 8020 that correspondingly exposes each of the two frame portions 22, i.e., the two positioning openings 8020 are defined so that the metal mask 8 can be inserted to be positioned in each of the two frame portions 22, and the metal mask 8 is installed on the vibration body 2 so that the lower surface 81 around the first inner ring surface 801 is closer to the upper work area 2111 of the thin-walled portion 21 than the top surfaces of the two frame portions 22 and the two frame portions 22 are inserted into the corresponding two positioning openings 8020 so that the metal mask 8 is positioned in the two frame portions 22, and in step e, two magnetic layers 5 that correspond to cover each of the two frame portions 22 are formed by the formation of a metal layer in the vibration body 2 on which the metal mask 8 is installed.

[0041] In this embodiment, in step c, as shown in Figures 7 and 8, the vibration body 2 has two frame parts 22 on opposite sides of the thin-walled portion 21, and one of the two frame parts 22 (i.e., the left frame part 22 in Figures 7 and 8) has two convex parts 222 spaced apart from each other and a concave part 221 defined by the two convex parts 222 between the two convex parts 222, and the bottom surface 2211 of the concave part 221 is formed to be flush with the upper plane 211 of the thin-walled portion 21 and at substantially the same height.

[0042] Specifically, the patterning means in step c of the present invention forms a mask layer (not shown) having a predetermined pattern on the upper surface 203 of the piezoelectric substrate 200, and then performs wet etching or dry etching on the upper surface 203 of the piezoelectric substrate 200 to remove the portion not covered by the mask layer, thereby forming a vibration body 2 having a thin portion 21 and two frame portions 22, and one of the two frame portions 22 (i.e., the left frame portion 22 in Figures 7 and 8) having two convex portions 222 spaced apart from each other and a concave portion 221 defined by the two convex portions 222 between the two convex portions 222.

[0043] As shown in Figs. 7 and 8, the two frame portions 22 are located on opposite left and right sides of the thin portion 21 in the above configuration.

[0044] In this embodiment, in step d, as shown in Figures 9 and 10, the metal mask 8 has three second inner annular surfaces 802 each defining a positioning opening 8020 that correspondingly exposes each of the two convex portions 222 and the other frame portion 22 of the two frame portions 22, i.e., the three positioning openings 8020 are defined so that they can be inserted to be positioned with each of the two convex portions 222 and the other frame portion 22, and further has an upper surface 82 opposite the lower surface 81, and a first passage 83 that penetrates the upper surface 82 and the lower surface 81 and exposes a portion of the upper plane 211 of the thin-walled portion 21 and a portion of the bottom surface 2211 of the recess 221 when the metal mask 8 is installed on the vibration body 2.

[0045] In more detail, the first passage 83 is spaced from the positioning opening 8020 and is formed to extend from the electrode opening 8010 toward the bottom surface 2211 of the recess 221 to the side surface 201 to which the bottom surface 2211 of the recess 221 is connected. Two second inner ring surfaces 802 corresponding to two protruding portions 222 of the three second inner ring surfaces 802 (i.e., the two second inner ring surfaces 802 on the left side in FIG. 9) are positioned respectively to the two protruding portions 222 of the frame portion 22 on the left side in FIG. The second inner ring surface 802 defines two positioning openings 8020 that can be inserted up to their root portions and penetrated into each of the two protrusions 222 so as to be positioned in the other frame portion 22 (i.e., the frame portion 22 on the right side in Figure 10), and the remaining second inner ring surface 802 of the three second inner ring surfaces 802 (i.e., the second inner ring surface 802 on the right side in Figure 9) defines a positioning opening 8020 that can be inserted up to its root portion and penetrated into the other frame portion 22 (i.e., the frame portion 22 on the right side in Figure 10) so as to be positioned in the other frame portion 22. Then, the metal mask 8 is installed on the vibration body 2 so that the first inner ring surface 801 and the lower surface 81 around the first passage 83 are closer to the upper work area 2111 of the thin-walled portion 21 and the upper plane 211 corresponding to the first passage 83 than the two convex portions 222 and the top surface of the other frame portion 22, and so that the metal mask 8 is positioned on the two convex portions 222 and the other frame portion 22 by inserting the two convex portions 222 and the other frame portion 22 into the corresponding three positioning openings 8020 up to the root portion and penetrating through the corresponding three positioning openings 8020.

[0046] In this embodiment, in step e, the formation of the metal layer in the vibration body 2 on which the metal mask 8 is installed is performed by a thin film deposition process, and by this formation, as shown in Figures 11 and 12, a top electrode layer 3 is formed which has an upper work portion 31 covering the upper work area 2111 of the thin-walled portion 21, and a top electrode layer extension portion 32 covering the part of the upper plane 211 located in the first passage 83 and the part of the bottom surface 2211 located in the first passage 83, and three magnetic layers 5 are formed which correspond to the two convex portions 222 of the frame portion 22 on the left side in Figure 11 and each of the other frame portions 22 on the right side in Figure 11, so that the top electrode layer extension portion 32 extends from the upper work portion 31 toward the bottom surface 2211 of the recess 221 so as to connect with the side surface 201 to which the bottom surface 2211 of the recess 221 is connected.

[0047] Also, in this embodiment, in step a, as shown in Figure 8, the bottom electrode layer 4 has a bottom electrode layer extension portion 42 having a lower extension portion 421 extending from the lower work portion 41 to the side surface 201 to which the bottom surface 2211 of the recess 221 is connected so as to connect to the side surface 201 to which the bottom surface 2211 is connected.

[0048] In this embodiment, as shown in FIG. 9, in step d, the metal mask 8 penetrates the upper surface 82 and the lower surface 81 so as to be spaced from the first passage 83 and the positioning opening 8020, and extends to the side surface 201 to which the bottom surface 2211 of the recess 221 is connected as shown in FIG. 10. When the metal mask 8 is installed on the vibration body 2, the metal mask 8 further includes a second passage 84 that exposes a part of the bottom surface 2211 of the recess 221. The metal mask 8 is then attached to the first inner ring surface 801, the first passage 83 and the second passage 84. The metal mask 8 is installed on the vibration body 2 so that the lower surface 81 around the passage 84 is closer to the upper work area 2111 of the thin-walled portion 21 and the upper plane 211 corresponding to the first passage 83 and the second passage 84 than the top surfaces of the two protrusions 222 and the other frame portion 22, and so that the metal mask 8 is positioned on the two protrusions 222 and the other frame portion 22 by inserting the two protrusions 222 and the other frame portion 22 into the corresponding three positioning openings 8020 up to the root portion and penetrating through the corresponding three positioning openings 8020.

[0049] That is, in step d of this embodiment, the metal mask 8 is installed on the vibration body 2 so that the first inner ring surface 801, the lower surface 81 around the first passage 83 and the second passage 84 are very close to the upper plane 211 of the thin-walled portion 21 and the two convex portions 222 and the other frame portion 22 protrude from the corresponding three positioning openings 8020.

[0050] In addition, in this embodiment, as shown in Figures 11 and 12, in step e, the formation of a metal layer in the vibration body 2 on which the metal mask 8 is installed further forms an upper extension portion 423 belonging to the bottom electrode layer extension portion 42, which covers a portion of the bottom surface 2211 of the recess 221 located in the second passage 84 and is not connected to the magnetic layer 5.

[0051] As shown in Figures 13 and 14, step f is a step of removing the metal mask 8 together with the metal layer formed on the metal mask 8 after step e, as shown in Figure 12, to expose the upper extension portion 423 of the bottom electrode layer extension portion 42, and removing the temporary substrate 6 to expose the bottom electrode layer 4.

[0052] In more detail, in step b of this embodiment, the lower surface 202 of the piezoelectric substrate 200 and the bottom electrode layer 4 are attached to the temporary substrate 6 using wax 7, so that when performing step f of this embodiment, the wax 7 located under the vibration body 2 and the bottom electrode layer 4 can be melted at a temperature slightly higher than the melting point of the wax 7, so that the temporary substrate 6 can be detached from the vibration body 2 and the bottom electrode layer 4. In addition, when performing step b using a light peeling adhesive material or a heat peeling adhesive material, the temporary substrate 6 can be removed by illumination or heating in step f.

[0053] Also, as shown in Figures 15 and 16, after step e or step f, the method further includes step e' of forming an intermediate extension portion 422 belonging to the bottom electrode layer extension portion 42 on the side 201 to which the bottom surface 2211 of the recess 221 is connected so as to connect the lower extension portion 421 of the bottom electrode layer 4 and the upper extension portion 423 of the bottom electrode layer 4.

[0054] In this embodiment, after step f, a mechanical arm (not shown) is used to apply silver paste to the side 201 where the bottom surface 2211 of the recess 221 is connected so as to connect the lower extension portion 421 of the bottom electrode layer 4 and the upper extension portion 423 of the bottom electrode layer 4, thereby forming the intermediate extension portion 422 of the bottom electrode layer extension portion 42.

[0055] According to the embodiment of the method for manufacturing a crystal resonator of the present invention described above, the embodiment of the crystal resonator of the present invention shown in FIG. 17 can be obtained.

[0056] The embodiment of the quartz crystal resonator of the present invention includes a vibrating body 2, a top electrode layer 3, a bottom electrode layer 4, and three magnetic layers 5, as shown in FIG.

[0057] The vibration body 2 includes a thin portion 21 , two frame portions 22 , and a plurality of side surfaces 201 derived from the piezoelectric substrate 200 .

[0058] The thinned portion 21 has an upper planar surface 211 and a lower planar surface 212 on opposite sides.

[0059] The upper plane 211 has an upper work area 2111 spaced apart from the multiple side surfaces 201 of the vibration body 2. In this embodiment, the upper work area 2111 is spaced apart from the multiple side surfaces 201 of the vibration body 2 and the two frame portions 22.

[0060] The lower plane 212 has a lower work area 2121 that is spaced apart from the multiple side surfaces 201 of the vibration body 2 .

[0061] The two frame portions 22 are on opposite sides of the thin portion 21 (i.e., on the left and right sides in FIG. 17 ), and each is configured to extend upwardly away from the thin portion 21 so that the side surfaces 201 on the frame portions 22 in the plurality of side surfaces 201 are flush with the side surfaces 201 on the thin portion 21 in the plurality of side surfaces 201. In this embodiment, each frame portion 22 is configured so that the side surfaces 201 on the frame portions 22 in the plurality of side surfaces 201 are flush with the side surfaces 201 on the thin portion 21 in the plurality of side surfaces 201.

[0062] One of the two frame parts 22 (i.e., the frame part 22 on the left side in Figure 17) has two convex parts 222 spaced apart from each other and a concave part 221 defined by the two convex parts 222 between the two convex parts 222, and the bottom surface 2211 of the concave part 221 is formed to be flush with the upper plane 211 of the thin-walled part 21 and at substantially the same height.

[0063] The top electrode layer 3 comprises an upper work portion 31 installed on the upper work area 2111, and a top electrode layer extension portion 32 extending from the upper work portion 31 toward the bottom surface 2211 of the recess 221 so as to connect with the side surface 201 to which the bottom surface 2211 of the recess 221 is connected.

[0064] The bottom electrode layer 4 includes a lower work portion 41 disposed in the lower work area 2121, and a bottom electrode layer extension portion .

[0065] The bottom electrode layer extension 42 includes a lower extension 421 , an intermediate extension 422 , and an upper extension 423 .

[0066] The lower extension portion 421 extends from the lower work portion 41 to the side surface 201 to which the bottom surface 2211 of the recess 221 is connected so as to be connected to the side surface 201 to which the bottom surface 2211 is connected.

[0067] The upper extension 423 is located on the bottom surface 2211 of the recess 221 without connecting to the magnetic layer 5 so as to be spaced apart from the top electrode layer extension 32. In this embodiment, the upper extension 423 is connected to the side surface 201 to which the bottom surface 2211 of the recess 221 is connected.

[0068] The intermediate extending portion 422 is formed on the side surface 201 to which the bottom surface 2211 of the recess 221 is connected so as to connect the lower extending portion 421 and the upper extending portion 423 .

[0069] The three magnetic layers 5 are not connected to the top electrode layer 3 and the upper extension portion 423 of the bottom electrode layer extension portion 42, but correspond to cover the two convex portions 222 of the frame portion 22 on the left side in Figure 17 and the other frame portion 22 of the two frame portions 22 (i.e., the frame portion 22 on the right side in Figure 17).

[0070] In this embodiment, the top electrode layer 3 and the magnetic layer 5 are made of nickel metal (Ni) having magnetic properties.

[0071] In addition, when performing step d, after the metal mask 8 is placed, as shown in Figures 9 and 10, the metal mask 8 is inserted into the corresponding positioning openings 8020 so that the two second inner ring surfaces 802 on the left side in Figure 9 are positioned with the two protruding portions 222 of the frame portion 22 on the left side in Figure 10, while surrounding the base portions of the two protruding portions 222, and the two protruding portions 222 are exposed protruding from the corresponding positioning openings 8020 (as shown in Figure 12). 9 is inserted into the right-side positioning opening 8020 so that the frame portion 22 protrudes and is exposed from the right-side positioning opening 8020 while surrounding the root portion of the frame portion 22 so as to be positioned on the frame portion 22 on the right side in FIG. 10 (as shown in FIG. 12), and the lower surface 81 around the first inner ring surface 801, the first passage 83 and the second passage 84 is very close to the upper plane 211 of the thin-walled portion 21.

[0072] Therefore, when performing step e, the first inner annular surface 801, the lower surface 81 around the first passage 83 and the second passage 84 are very close to the upper plane 211 of the thin-walled portion 21, so that in step e, the size accuracy of the upper work portion 31 and the top electrode layer extension portion 32 of the top electrode layer 3 formed by deposition and the upper extension portion 423 of the bottom electrode layer extension portion 42 can be improved.

[0073] In other words, by carrying out steps d and e of the present invention, the disadvantage of method 2 in the background art (i.e., the thickness of the frame portion 112 is greater than that of the thin-walled portion 111, which increases the distance between the metal mask and the vibrator 11, resulting in an alignment error between the electrode opening of the metal mask and the portion where the apex excitation electrode 12 is deposited, thereby reducing the accuracy of the size of the apex excitation electrode 12 obtained by the thin film deposition process) can be eliminated.

[0074] In addition, when performing step e, the metal layer formed by deposition is the top electrode layer 3 and the upper extension portion 423 of the bottom electrode layer extension portion 42 covering the upper plane 211 of the vibration body 2, and three magnetic layers 5 covering each convex portion 222 and the frame portion 22 on the right side, that is, by performing step e, the top electrode layer 3 and the upper extension portion 423 of the bottom electrode layer extension portion 42 and each magnetic layer 5 are formed, and each magnetic layer 5, the top electrode layer 3 and the upper extension portion 423 of the bottom electrode layer extension portion 42 are not connected to each other.

[0075] Therefore, when the quartz crystal unit of the present invention is applied to a communication-type telecommunication product, the quartz crystal unit of the present invention can be moved to the circuit board of the communication-type telecommunication product by adsorbing the magnetic layer 5 using a magnetic device, for example, a device having an electromagnetic attraction part that generates a magnetic adsorption force when electricity is passed through it, i.e., by a method other than moving it by clamping it with a mechanical arm.

[0076] According to the above, the manufacturing method of the quartz crystal oscillator of the present invention can improve the size accuracy of the upper work portion 31 and the top electrode layer extension portion 32 of the top electrode layer 3 formed by deposition, and the upper extension portion 423 of the bottom electrode layer extension portion 42, and can form a magnetic layer 5, so that the quartz crystal oscillator of the present invention can be moved by a device that is magnetically charged by the magnetic layer 5.

[0077] Therefore, the object of the present invention can be achieved reliably.

[0078] While the invention has been described in connection with what are considered to be exemplary embodiments, it is understood that the invention is not limited to the disclosed embodiments, but is intended to cover various arrangements within the broadest spirit and scope so as to encompass all such modifications and equivalent arrangements.

[0079] The above embodiment is illustratively intended to explain the principles and effects of the present invention, and is not intended to limit the present invention. Those skilled in the art may make some changes or modifications to the above embodiment without departing from the spirit and scope of the present invention. Therefore, all changes and modifications made by those skilled in the art without departing from the gist of the present invention should be considered to be within the scope of protection of the present invention. [Industrial Applicability]

[0080] The present invention is suitable for providing a method for manufacturing a quartz crystal resonator and a quartz crystal resonator. [Explanation of symbols]

[0081] 200 Piezoelectric Substrate 201 Side 202 Lower surface 203 Upper surface 2 Vibration unit 21 Thin section 211 Upper plane 2111 Upper Work Area 212 Lower plane 2121 Lower Work Area 22 Frame section 221 Recess 2211 Bottom 222 Convex 3 Top electrode layer 31 Upper work section 32 Top electrode layer extension part 4 Bottom electrode layer 41 Lower work section 42 Bottom electrode layer extension part 421 Lower extension part 422 Intermediate extension section 423 Upper extension part 5 Magnetic layer 6 Temporary board 7. Wax 8 Metal Mask 81 Bottom surface 82 Top surface 83 First Passage 84 Second Passage 801 First inner ring surface 8010 Electrode opening 8020 Positioning opening 802 Second inner ring surface

Claims

1. The vibrating body includes a top electrode layer, a bottom electrode layer, and at least one magnetic layer; The vibration body includes a thin portion, at least one frame portion, and a plurality of side surfaces, the thinned portion has upper and lower planar surfaces on opposite sides; the upper plane has an upper work area spaced apart from the plurality of side surfaces of the vibration body; the lower plane has a lower work area spaced apart from the plurality of side surfaces of the vibration body; the frame portion is configured to extend upwardly away from the thin portion such that the side surfaces of the frame portion in the plurality of side surfaces are flush with the side surfaces of the thin portion in the plurality of side surfaces; the top electrode layer includes an upper work portion disposed on the upper work area; the bottom electrode layer includes a lower work portion disposed on the lower work area; the at least one magnetic layer covers the at least one frame portion without being connected to the top electrode layer; The vibration body includes two frame portions on opposite sides of the thin-walled portion, the top electrode layer further comprises a top electrode layer extension; and one of the two frame portions has two protruding portions spaced apart from each other and a recessed portion defined by the two protruding portions, a bottom surface of the recess is formed to be flush with the upper plane of the thin-walled portion; the top electrode layer extension of the top electrode layer extends from the upper workpiece toward the bottom surface of the recess so as to be connected to the side surface to which the bottom surface of the recess is connected; a quartz crystal unit, characterized in that the magnetic layers are three in number, covering the two protruding portions and the other of the two frame portions in a corresponding manner, respectively;

2. the bottom electrode layer further comprises a bottom electrode layer extension; The bottom electrode layer extension portion includes a lower extension portion, a middle extension portion, and an upper extension portion, The lower extension portion extends from the lower work portion so as to connect to the side surface to which the recess is connected, the upper extension is located on the bottom surface of the recess, spaced apart from the top electrode layer extension and not connected to the magnetic layer; 2. The quartz crystal unit according to claim 1, wherein the intermediate extension portion is formed on the side surface to which the bottom surface of the recess is connected so as to connect the lower extension portion and the upper extension portion.

3. Step a) of forming a bottom electrode layer on a lower surface of a piezoelectric substrate, the bottom electrode layer having a lower work portion spaced apart from a plurality of side surfaces of the piezoelectric substrate; Step b: attaching the lower surface of the piezoelectric substrate and the bottom electrode layer to a temporary substrate; After step b, a step c is performed by patterning the piezoelectric substrate from an upper surface, which is the opposite surface of the lower surface of the piezoelectric substrate, to form a vibration body having a thin portion, at least one frame portion, and the plurality of side surfaces, the thin portion having an upper plane and a lower plane on both sides opposite to each other, the upper plane having an upper work area spaced apart from the plurality of side surfaces of the vibration body and the at least one frame portion, the lower plane having a lower work area spaced apart from the plurality of side surfaces of the vibration body and on which the bottom electrode layer is disposed, and the frame portion is configured to extend upward away from the thin portion so that the side surface of the frame portion in the plurality of side surfaces is flush with the side surface of the thin portion in the plurality of side surfaces; a metal mask including a first inner annular surface defining an electrode opening exposing the upper work area of ​​the thin-walled portion, at least one second inner annular surface spaced apart from the first inner annular surface defining at least one positioning opening that can be inserted to be positioned on the at least one frame portion while exposing the at least one frame portion, and a lower surface facing the upper plane of the thin-walled portion; and a step d of installing the metal mask on the vibration body such that the lower surface around the first inner annular surface is closer to the upper work area of ​​the thin-walled portion than the top surface of the frame portion and the frame portion is inserted into the corresponding positioning opening so that the metal mask is positioned on the frame portion; e) forming a metal layer on the vibration body on which the metal mask is installed, to form a top electrode layer having an upper work part covering the upper work area of ​​the thin-walled part, and to form at least one magnetic layer covering the at least one frame part and not connected to the top electrode layer; and after step e, a step f of removing the temporary substrate to expose the bottom electrode layer.

4. In the step c, the vibration body includes two frame portions on opposite sides of the thin-walled portion, In step d, the metal mask has two second inner ring surfaces each defining the positioning opening that exposes the two frame parts correspondingly, and the metal mask is installed on the vibration body so that the lower surface around the first inner ring surface is closer to the upper work area of ​​the thin-walled part than the top surfaces of the two frame parts, and the two frame parts are inserted into the corresponding two positioning openings so that the metal mask is positioned on the two frame parts; 4. The method for manufacturing a quartz crystal resonator according to claim 3, wherein in step e, the formation of the metal layer in the vibration body on which the metal mask is placed forms two of the magnetic layers that respectively cover the two frame portions.

5. In step c, the vibration body includes two frame portions on opposite sides of the thin-walled portion, and one of the two frame portions has two convex portions spaced apart from each other and a concave portion defined by the two convex portions, and the bottom surface of the concave portion is formed to be flush with the upper plane of the thin-walled portion, In step d, the metal mask includes three second inner ring surfaces each defining the positioning opening that exposes the two protrusions and the other of the two frame parts, and further includes an upper surface opposite to the lower surface, and a first passage penetrating the upper surface and the lower surface, spaced from the positioning opening, and extending from the electrode opening toward the bottom surface of the recess to the side surface to which the bottom surface of the recess is connected, and exposing a part of the upper flat surface of the thin-walled part and a part of the bottom surface of the recess when the metal mask is installed on the vibration body, and the metal mask is installed on the vibration body so that the lower surface around the first inner ring surface is closer to the upper work area of ​​the thin-walled part than the top surfaces of the two protrusions and the other frame parts, and the two protrusions and the other frame parts are inserted into the three corresponding positioning openings so that the metal mask is positioned on the two protrusions and the other frame parts, 4. The method for manufacturing a quartz crystal oscillator as described in claim 3, characterized in that in step e, by forming the metal layer in the vibration body on which the metal mask is installed, the top electrode layer is formed having the upper work portion covering the upper work area of ​​the thin-walled portion, and a top electrode layer extension portion covering the portion of the upper plane located at the first passage and the portion of the bottom surface located at the first passage, and three magnetic layers are formed correspondingly covering each of the two convex portions and the other frame portion, and the top electrode layer extension portion extends from the upper work portion toward the bottom surface of the recess so as to connect to the side surface to which the bottom surface of the recess is connected.

6. In the step (a), the bottom electrode layer includes a bottom electrode layer extension portion including a lower extension portion extending from the lower work portion to the side surface to which the bottom surface of the recess is connected so as to be connected to the side surface to which the bottom surface of the recess is connected; In the step d, the metal mask further includes a second passage extending through the upper surface and the lower surface to the side surface to which the bottom surface of the recess is connected, so as to be spaced from the first passage and the positioning opening, and exposing a part of the bottom surface of the recess when the metal mask is installed on the vibration body; 6. The method for manufacturing a quartz crystal resonator according to claim 5, wherein in step e, the formation of the metal layer in the vibration body on which the metal mask is installed further forms an upper extension portion belonging to the bottom electrode layer extension portion, covering the part of the bottom surface of the recess located in the second passage, and not connected to the magnetic layer.

7. 7. The method for manufacturing a quartz crystal resonator according to claim 6, further comprising, after step e or step f, step e' of forming an intermediate extension portion belonging to the bottom electrode layer extension portion on the side surface to which the bottom surface of the recess is connected so as to connect the lower extension portion of the bottom electrode layer and the upper extension portion of the bottom electrode layer.

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