Dicing system and dicing method

Abstract

A dicing system of the disclosure is provided with: a protection layer forming device; a patterning device; a plasma processing device; a measurement device which acquires at least one of first processing data concerning a protection layer, second processing data concerning a mask, and third processing data concerning an element chip; and a control unit which causes at least one of the protection layer forming device, the patterning device, and the plasma processing device to operate on the basis of a recipe determined for each device. The control unit, on the basis of at least one of the first processing data, the second processing data, and the third processing data, determines whether a recipe should be modified. If modification of a recipe is necessary, the control unit modifies at least one of the recipes, and causes at least one of the protection layer forming device, the patterning device, and the plasma processing device to operate on the basis of the modified recipe.

Description

[Technical field]

[0001] The present invention relates to a system and method for dicing a substrate using plasma. [Background technology]

[0002] As a method for dividing a substrate to produce multiple element chips, a method has been proposed in which the substrate is covered with a protective layer, the protective layer is patterned to form a mask, and then the substrate exposed through the mask is plasma etched (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2015-519732 Summary of the Invention [Problem to be solved by the invention]

[0004] The element chip produced by plasma etching is produced through a number of steps, including a step of forming a protective layer, a step of patterning the protective layer, a step of plasma etching, etc. Therefore, if there is variation in the shapes of the protective layer and mask produced in each step, the amount of etching, etc., the shape and quality of the element chip will not be stable. [Means for solving the problem]

[0005] One aspect of the present invention relates to a dicing system comprising a protective layer forming apparatus that forms a protective layer on a surface of a substrate, a patterning apparatus that patterns the protective layer to form a mask, a plasma processing apparatus that plasma etches the substrate exposed through the mask to form a plurality of element chips, a measuring apparatus that acquires at least one processing data selected from the group consisting of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chips, and a control unit that operates at least one apparatus selected from the group consisting of the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus based on a recipe defined for each apparatus, wherein the control unit determines whether to change the recipe based on at least one of the at least one processing data, and if the recipe needs to be changed, changes at least one of the recipes, and operates at least one apparatus selected from the group consisting of the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus based on the changed recipe.

[0006] Another aspect of the present invention relates to a dicing method including: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed through the mask based on a third recipe to form a plurality of element chips; a measurement step of acquiring at least one processing data selected from the group consisting of first processing data on the protective layer, second processing data on the mask, and third processing data on the element chips; a recipe changing step of determining whether or not to change at least one recipe selected from the group consisting of the first recipe, the second recipe, and the third recipe based on at least one of the acquired processing data, and changing the at least one recipe if it is necessary to change the at least one recipe; and a feedback step of feeding back the changed at least one recipe to control of a process corresponding to the at least one recipe. In a first example of the dicing method, the at least one recipe is the first recipe, and if the first recipe needs to be changed, the feedback step feeds back the changed first recipe to the control of the protective layer forming step. In a second example of the dicing method, the at least one recipe is the second recipe, and if the second recipe needs to be changed, the feedback step feeds back the changed second recipe to the control of the patterning step. In a third example of the dicing method, the at least one recipe is the third recipe, and if the third recipe needs to be changed, the feedback step feeds back the changed third recipe to the control of the plasma processing step.

[0007] Another aspect of the present invention relates to a dicing method including: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed from the mask based on a third recipe to form a plurality of element chips; a measurement step of acquiring at least one of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chips; a first recipe changing step of determining whether or not to change the first recipe based on at least one of the acquired first processing data, second processing data, and third processing data, and changing the first recipe if the first recipe needs to be changed; and a first feedback step of feeding back the changed first recipe to control of the protective layer forming step.

[0008] Yet another aspect of the present invention relates to a dicing method including: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed from the mask based on a third recipe to form a plurality of element chips; a measurement step of acquiring at least one of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chips; a second recipe changing step of determining whether or not to change the second recipe based on at least one of the acquired first processing data, second processing data, and third processing data, and changing the second recipe if the second recipe needs to be changed; and a second feedback step of feeding back the changed second recipe to control of the patterning step.

[0009] Yet another aspect of the present invention relates to a dicing method including: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed from the mask based on a third recipe to form a plurality of element chips; a measurement step of acquiring at least one of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chips; a third recipe changing step of determining whether or not to change the third recipe based on at least one of the acquired first processing data, second processing data, and third processing data, and changing the third recipe if it is necessary to change the third recipe; and a third feedback step of feeding back the changed third recipe to control of the plasma processing step.

[0010] Yet another aspect of the present invention relates to a dicing method including: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed through the mask based on a third recipe to form a plurality of element chips; a measurement step of acquiring second processing data related to the mask; a third recipe changing step of determining whether or not to change the third recipe based on the acquired second processing data and changing the third recipe if the third recipe needs to be changed; and a feedforward step of feeding forward the changed third recipe to control of the plasma processing step. Effect of the Invention

[0011] According to the present invention, the quality of the obtained component chips is improved. The novel features of the present invention are set forth in the appended claims, but the present invention, both in terms of structure and content, together with other objects and features of the present invention, will be better understood from the following detailed description taken in conjunction with the drawings. [Brief description of the drawings]

[0012] [Figure 1] 1 is a block diagram showing an example of a configuration of a dicing system according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a block diagram showing another example of the configuration of a dicing system according to an embodiment of the present invention. [Diagram 3] FIG. 13 is a block diagram showing yet another example of the configuration of a dicing system according to an embodiment of the present invention. [Figure 4] 5 is a flowchart illustrating an example of a process performed by a control unit according to the embodiment of the present invention. [Diagram 5] 10 is a flowchart illustrating another example of the process performed by the control unit according to the embodiment of the present invention. [Figure 6] 4 is a flow chart illustrating mode Ia of a dicing method according to an embodiment of the present invention. [Figure 7] 1 is a flowchart illustrating mode Ib of a dicing method according to an embodiment of the present invention. [Figure 8] 1 is a flowchart illustrating an aspect Ic of a dicing method according to an embodiment of the present invention. [Figure 9] 1 is a flowchart illustrating mode II-a of a dicing method according to an embodiment of the present invention. [Figure 10] 13 is a cross-sectional view that illustrates a schematic view of a part of a substrate (the mth substrate) after a patterning process in which second processing data exceeds an allowable range that is set based on target data. FIG. [Figure 11] 13 is a cross-sectional view that illustrates a schematic view of a part of a substrate (the mth substrate) after a plasma processing step in which second processing data exceeds an allowable range that is set based on target data. FIG. [Figure 12] FIG. 11 is a cross-sectional view illustrating a schematic view of a portion of a substrate (m+n-th substrate) patterned using a modified second recipe. [Figure 13] FIG. 2 is a cross-sectional view that illustrates a schematic representation of a portion of a plasma-treated substrate (m+nth substrate). [Figure 14] 11 is a flowchart illustrating mode II-b of the dicing method according to the embodiment of the present invention. [Figure 15] 1 is a flowchart illustrating mode III-a of a dicing method according to an embodiment of the present invention. [Figure 16] FIG. 11 is a cross-sectional view that illustrates a portion of a substrate (m+n-th substrate) that has been plasma-processed based on a modified third recipe. [Figure 17] 11 is a flowchart illustrating mode III-b of the dicing method according to the embodiment of the present invention. [Figure 18] FIG. 11 is a cross-sectional view that illustrates a portion of a substrate (the mth substrate) that has been plasma-processed based on a modified third recipe. [Figure 19] 11 is a flowchart illustrating mode III-c of the dicing method according to the embodiment of the present invention. [Figure 20] FIG. 2 is a cross-sectional view that illustrates a schematic view of a portion of a plasma-treated substrate (the mth substrate). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] The recipe (etching conditions) used for plasma etching is usually determined by analyzing a huge amount of accumulated processing data. This processing data is obtained by repeating processing while changing the etching conditions for each substrate to be etched. The determined recipe is input into the plasma processing device, and plasma etching is performed based on this recipe. Plasma etching is usually performed continuously on multiple substrates of the same type.

[0014] The recipe is determined under the assumption that a mask in a set target state is formed on a substrate. However, in actual processing, the state of the mask may not match the set value. For example, the actual patterning width may be larger than the set value. In this case, if plasma etching is performed using a recipe determined from past processing data, the amount of etching of the substrate will be excessive, resulting in a deterioration in the quality of the resulting device chip.

[0015] Even if the etching conditions are set according to a recipe, the desired etching may not be achieved due to the internal state of the device used or changes in the parts over time.

[0016] Therefore, in this embodiment, the etching conditions are changed based on data related to the shape of the actually formed mask, and the plasma processing apparatus is feedback-controlled or feedforward-controlled. This embodiment also includes an aspect in which the protective layer formation conditions are changed based on data related to the shape of the actually formed mask, and the protective layer formation apparatus is feedback-controlled, and an aspect in which the patterning conditions are changed based on data related to the shape of the actually formed mask, and the patterning apparatus is feedback-controlled.

[0017] Furthermore, this embodiment includes an aspect in which the protective layer forming conditions are changed based on data related to the actually fabricated element chip, and the protective layer forming device is feedback-controlled, an aspect in which the patterning conditions are changed based on data related to the actually fabricated element chip, and the patterning device is feedback-controlled, and an aspect in which the etching conditions are changed based on data related to the actually fabricated element chip, and the plasma processing device is feedback-controlled. By performing at least one of the above feedforward control and feedback control, the quality of the obtained element chip is improved.

[0018] By using feedback control and feedforward control, the recipe is modified using data on the mask that has actually been formed and / or data on the device chips obtained by etching, and the modified recipe is applied to the dicing process, thereby enabling efficient production of high-quality device chips.

[0019] The modified recipe can be automatically generated using an algorithm for recipe generation. The modified recipe is also automatically applied to each device by the control unit. This reduces the number of processes and improves productivity.

[0020] A. Dicing System The dicing system according to this embodiment includes a protective layer forming device, a patterning device, a plasma processing device, a measuring device, and a control unit.

[0021] The protective layer forming device forms a protective layer on the surface of the substrate based on a first recipe. The patterning device patterns the protective layer to form a mask based on a second recipe. The plasma processing device plasma etches the substrate exposed from the mask based on a third recipe to form a plurality of element chips. The measuring device acquires at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chips. The control unit controls at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device.

[0022] (Control unit) In detail, the control unit creates a recipe, determines whether or not the recipe needs to be changed, changes the recipe, and operates each device according to the optimal recipe.

[0023] Whether or not to change the recipe is determined based on at least one of the at least one acquired processing data (the acquired first processing data, second processing data, and third processing data). For example, if any of the processing data exceeds an allowable range set based on the target data, it is determined that the recipe needs to be changed. The target data is various data related to the target mask and element chip. The processing data used may be one or more. A plurality of processing data may be used to determine whether or not the recipe needs to be changed. The plurality of processing data may be two or more first processing data, two or more second processing data, two or more third processing data, or a combination of these processing data.

[0024] The recipe to be changed is not particularly limited, and is at least one recipe selected from the group consisting of a first recipe, a second recipe, and a third recipe (hereinafter, may be simply referred to as a recipe). It is sufficient that the recipe that controls the process that has the greatest effect on the deviation between the processing data and the target data is changed.

[0025] One of the causes of the first, second or third processing data exceeding the tolerance is a defect in the protective layer. In this case, the first recipe is changed. Then, the protective layer forming device is feedback-controlled so that the protective layer is formed on another substrate to be processed later based on the changed first recipe.

[0026] If the second or third processing data is outside the tolerance range, one of the causes is improper patterning, in which case the second recipe is modified and the patterning device is feedback controlled so that another substrate processed subsequently is patterned based on the modified second recipe.

[0027] One of the causes of the third processing data exceeding the allowable range is inappropriate plasma etching. In this case, the third recipe is changed, and the plasma processing apparatus is feedback-controlled so that another substrate to be processed later is plasma-processed based on the changed third recipe.

[0028] Even if the second processing data exceeds the allowable range, the third processing data can be brought within the allowable range by changing the recipe for the plasma processing. In other words, by resetting the etching conditions suitable for the formed mask, a high-quality device chip may be obtained. In this case, the third recipe is changed, and the plasma processing apparatus is feedback-controlled or feedforward-controlled so that the substrate is plasma-processed based on the changed third recipe.

[0029] In addition to the protective layer forming device, the patterning device, and the plasma processing device, for example, an input unit is connected to the control unit. The input unit is installed in each device, for example. For example, the target data and at least one of the first processing data, the second processing data, and the third processing data are input to the input unit. The target data is input by an operator. The processing data may be input by the operator or automatically from a measuring device.

[0030] The administrator who owns the server to which the control unit is connected, the owner of the protective layer forming device, the owner of the patterning device, and the owner of the plasma processing device may be different from each other. The server and each device are connected by a computer network. When necessary data is input to the input unit, the data is transmitted to the server. The control unit reads out the necessary data from the server, performs calculations etc. as necessary, and remotely operates each device based on the results.

[0031] The control unit includes, for example, a storage unit, a calculation unit, and a device control unit. The storage unit is connected to a first database in which information for generating a recipe is stored. The first database stores accumulated past processing data, substrate data related to a substrate to be etched, and equipment data related to at least one of a protective layer forming device, a patterning device, and a plasma processing device.

[0032] The stored processing data includes etching conditions, the etching rate of the element chip linked to the etching conditions, the etching depth, the width and aspect ratio of the formed groove, etc. The substrate data includes the lot number, the material of the substrate, the type of element mounted, etc. The facility data includes the specifications of the equipment, the date of the last maintenance, the processing history, the log data during processing, etc.

[0033] When the dicing process is started, the calculation unit first generates an optimal recipe (initial recipe) for the target substrate based on various data stored in the first database and the target data input by the input unit. However, any one of the first recipe, the second recipe, and the third recipe may be determined in advance. In this case, an initial recipe other than the determined recipe is generated. The determined recipe may be input to the input unit. The input target data is stored in the first database.

[0034] When the dicing process progresses and at least one of the first processing data, the second processing data, and the third processing data is input to the input unit, the calculation unit determines whether or not to change the initial recipe based on the various data stored in the first database and the newly input processing data. If it is determined that the initial recipe needs to be changed, the control unit generates a changed recipe and changes the initial recipe. A predetermined algorithm is used to generate the initial recipe and the changed recipe.

[0035] The recipe generated by the calculation unit is stored in the storage unit as a second database. The second database stores the initial recipe and the modified recipe generated by the calculation unit. The recipe stored in the second database, together with the first database, can be used to generate modified recipes and initial recipes for other types of substrates.

[0036] The equipment control unit operates the protective layer forming equipment, the patterning equipment, and the plasma processing equipment based on the generated initial recipe or the modified recipe.

[0037] (Simulator) The dicing system may further include a simulator. The simulator calculates prediction data regarding a processed shape of the element chip based on the second processing data and the third recipe. The prediction data is stored as a third database in the storage unit. The third recipe used by the simulator may be an initial recipe or a modified recipe. The simulator includes, for example, a computer. The server may include the simulator (i.e., a simulation function).

[0038] The simulator can further be used to generate a third recipe. For example, the simulator is used to predict a plurality of processed shapes of the resulting element chip based on the second processing data and the accumulated processing data. Then, the calculation unit calculates the difference between each of the predicted processed shapes of the element chip and a desired processed shape, and generates an optimal third recipe taking these differences into consideration. This third recipe is used for plasma processing instead of the initial third recipe.

[0039] The predicted data can also be used to determine whether or not there is an abnormality in the plasma processing apparatus. For example, if the absolute value of the difference between the predicted data calculated by the simulator and the third processing data, which is an actual measurement value, exceeds a predetermined threshold, it can be determined that there is an abnormality in the plasma processing apparatus. In this case, it is desirable to perform maintenance on the apparatus. On the other hand, if the absolute value of the difference between the predicted data and the third processing data is smaller than the threshold, it can be determined that there is no abnormality in the plasma processing apparatus. In this case, the simulator may further be used to generate a third recipe as described above. This third recipe is used for plasma processing instead of the initial third recipe.

[0040] (Notification Department) In this embodiment, a notification unit is provided in the dicing system to notify the user when maintenance is required. Specifically, in a dicing system equipped with a simulator, if the absolute value of the difference between the predicted data and the third processing data, which is the actual measurement value, is greater than a preset threshold value, the control unit uses a predetermined algorithm to identify whether the device causing the problem is a protective layer forming device, a patterning device, or a plasma processing device, and calculates the maintenance time. The calculation result is notified to the owner or operator of each device by the notification unit. On the other hand, if the absolute value of the difference between the predicted data and the third processing data, which is the actual measurement value, is equal to or less than the preset threshold value, the control unit is made to determine whether or not to generate a modified recipe as described above. The threshold value is usually set to exceed the allowable range of the target data.

[0041] The notification unit includes, for example, a display unit for displaying the time for maintenance, or a voice generating unit for notifying that the time for maintenance has arrived. The notification unit notifies the owner or operator of each device of the time for maintenance by display or voice. The notification unit can also notify other information. The notification unit may be installed in any one of the mask forming device, the patterning device, and the plasma processing device, or may be installed in a server including a control unit.

[0042] (Ordering Department) The dicing system may further include an ordering unit that automatically orders parts for the device. The control unit causes the notification unit to notify the maintenance time of the causative device and causes the ordering unit to order parts for the causative device. This enables predictive maintenance of the dicing system and improves productivity.

[0043] (Protective layer forming device) The protective layer forming device is not particularly limited as long as it can form a protective layer on the surface of the substrate, and examples of the protective layer forming device include a spin coater, a spray coater, a die coater, and a laminator.

[0044] The first recipe includes, for example, the type of mask material, the amount of mask material to be applied, and the application speed.

[0045] (Patterning Equipment) The patterning device is not particularly limited as long as it can pattern the protective layer. The patterning device may be appropriately selected depending on the material of the protective layer. When the protective layer is made of a photosensitive resin, it can be patterned by an exposure device. When the protective layer is made of other resins, it can be patterned by a laser processing device.

[0046] When an exposure tool is used, the second recipe includes the exposure dose, the depth of focus, and the like. When a laser processing device is used, the second recipe includes laser output, scanning speed, pulse width, frequency, and the like.

[0047] (Plasma processing equipment) The plasma processing apparatus is not particularly limited as long as it can plasma etch the substrate exposed from the mask. The plasma processing apparatus includes, for example, a reaction chamber, a plasma generating unit that generates plasma in the reaction chamber, and a stage that is installed inside the reaction chamber and on which the substrate is placed. The plasma generating unit includes, for example, an electrode installed at the top of the reaction chamber, and a process gas source that supplies a plasma generating gas (process gas) to the inside of the reaction chamber. With the process gas supplied to the reaction chamber, high-frequency power is supplied to the electrode, thereby generating plasma in the reaction chamber.

[0048] The third recipe includes the pressure in the reaction chamber, the type and flow rate of the process gas, the magnitude of the high frequency power, the frequency of the high frequency, the processing time, and the like.

[0049] (Measuring Equipment) The measuring device is not particularly limited as long as it can obtain at least one of the first processing data related to the protective layer, the second processing data related to the mask, and the third processing data related to the element chip. Examples of the measuring device include an optical shape measuring device and a scanning electron microscope (SEM).

[0050] The first processing data includes parameters representing the thickness and variation of the protective layer, the surface state of the protective layer, etc. The parameters representing the surface state of the protective layer include, for example, the presence or absence of pinholes on the surface of the protective layer, the roughness (flatness), etc. In addition, when the substrate has an uneven surface, the parameters representing the surface state of the protective layer include data on the covering state of the unevenness with the protective layer.

[0051] The second processing data includes parameters representing the patterning width and its variation, the thickness of the mask and its variation, the state of the surface of the mask, etc. The parameters representing the state of the surface of the mask include, for example, the presence or absence of pinholes on the mask surface, the roughness (flatness), etc. In addition, when the substrate has an uneven surface, the parameters representing the state of the surface of the mask include data on the covering state of the unevenness by the mask.

[0052] The third processing data includes parameters representing the surface state of the mask covering the surface of the element chip, parameters representing the shape of the end face of the element chip, the distance between adjacent element chips and its variation, etc. The parameters representing the surface state of the mask covering the surface of the element chip include, for example, the presence or absence of pinholes on the mask surface, the roughness (flatness), etc. In addition, when the substrate has an uneven surface, the parameters representing the surface state of the mask covering the surface of the element chip include data on the covering state of the unevenness by the mask.

[0053] The parameters representing the shape of the end face of the element chip include, for example, the height and width of the scallops formed on the end face, the size and number of voids formed on the end face, the inclination angle of the end face, the size of the notch, etc. The distance between adjacent element chips includes, for example, the distance between the element chips on the mask side and the distance between the element chips on the opposite side to the mask.

[0054] The data regarding the covering state of the unevenness specifically includes the thickness of the protective layer or mask (hereinafter sometimes referred to as the protective layer, etc.) covering the concave portions, the thickness of the protective layer, etc. covering the convex portions, or the ratio of the thicknesses of the protective layer, etc. covering the concave portions and the convex portions.

[0055] (substrate) The substrate to be etched is not particularly limited. For example, a substrate used in the manufacture of electronic devices, a circuit board having a circuit formed thereon, a mounting board having electronic components mounted on a circuit board, a semiconductor substrate, etc. may be included. Bumps, pad electrodes, etc. may be arranged on the surface of the substrate. In this case, the surface of the substrate may have projections and recesses.

[0056] FIG. 1 is a block diagram showing an example of the configuration of a dicing system according to this embodiment. The dicing system 1000A includes a control unit 100, a protective layer forming apparatus 200, a patterning apparatus 300, a plasma processing apparatus 400, a measuring apparatus 500, and an input unit 600.

[0057] The input unit 600 receives target data D00 related to a target substrate to be etched, first processing data D01, second processing data D02, and third processing data D03. At least one of the first processing data D01, second processing data D02, and third processing data D03 may be input. The first processing data D01 is data related to a formed protective layer acquired by the measuring device 500. The second processing data D02 is data related to a formed mask acquired by the measuring device 500. The third processing data D03 is data related to a formed element chip acquired by the measuring device 500. The measuring devices that acquire the first processing data D01, second processing data D02, and third processing data D03 may be the same or different.

[0058] The control unit 100 includes a storage unit 101, a calculation unit 102, and an equipment control unit 103. The storage unit 101 stores a first database DB01 and a second database DB02. The first database DB01 stores accumulated processing data, board data, and equipment data. The second database DB02 stores an initial recipe and a changed recipe generated by the calculation unit 102.

[0059] At least one of a first recipe, a second recipe, and a third recipe is generated in the calculation unit 102. The recipe generated here may be an initial recipe or a modified recipe.

[0060] The apparatus control unit 103 operates at least one of the protective layer forming apparatus 200, the patterning apparatus 300, and the plasma processing apparatus 400 based on the generated initial recipe or modified recipe.

[0061] FIG. 2 is a block diagram showing another example of the configuration of the dicing system according to the present embodiment. Dicing system 1000B has the same configuration as dicing system 1000A shown in FIG. 1, except that dicing system 1000B includes simulator 700 and that storage unit 101 further stores a third database DB03.

[0062] The simulator 700 calculates predicted data for the element chip based on the second processing data D02 input to the input unit 600 and the third recipe stored in the second database DB02. The calculation unit 102 calculates the difference between the predicted data calculated by the simulator 700 and the third processing data D03, which is an actual measurement value, and generates a changed recipe based on this difference. The predicted data calculated by the simulator 700 is stored in the third database DB03.

[0063] FIG. 3 is a block diagram showing another example of the configuration of the dicing system according to the present embodiment. Dicing system 1000C has the same configuration as dicing system 1000B shown in FIG. 2, except that dicing system 1000C includes notification unit 800 and ordering unit 900.

[0064] The calculation unit 102 calculates the difference between the predicted data calculated by the simulator 700 and the third processing data D03, which is an actual measurement value, and judges whether or not the absolute value of this difference exceeds a threshold. If the absolute value of the difference exceeds the threshold, the calculation unit 102 performs further calculations to identify the causative device and calculate the maintenance timing. The maintenance timing is notified to the owner or operator of the causative device by the notification unit 800. If the absolute value of the difference is equal to or less than the threshold, it is judged whether or not to generate a changed recipe. The ordering unit 900 orders parts for the causing device from the manufacturer as necessary.

[0065] FIG. 4 is a flowchart showing an example of processing performed by the control unit according to the present embodiment. A dicing process is started, and target data is input to an input unit (S01). A control unit reads out accumulated processing data stored in a first database, and generates an initial recipe suitable for a target substrate based on the accumulated processing data and the target data (S02). The generated initial recipe is stored in a second database. Then, each device operates based on the initial recipe, and the substrate is processed based on the initial recipe (S03).

[0066] As the dicing process progresses, processing data is acquired from the substrate processed by each device, i.e., at least one of the first processing data, the second processing data, and the third processing data is acquired (S04). The control unit determines whether or not to change the initial recipe based on the target data and each processing data (S05). If it is determined that the initial recipe does not need to be changed, each device is controlled to operate based on the initial recipe (S06). On the other hand, if it is determined that the initial recipe needs to be changed, the control unit generates a changed recipe and changes the initial recipe (S07). Each device is controlled to operate based on the changed recipe (S08). A predetermined algorithm is used to generate the initial recipe and the changed recipe. The generated changed recipe is stored in a second database.

[0067] Fig. 5 is a flowchart showing another example of the process performed by the control unit according to the present embodiment, in which a simulator is installed. A dicing process is started, and target data is input to an input unit (S01). A control unit reads out accumulated processing data stored in a first database, and generates an initial recipe suitable for a target substrate based on the accumulated processing data and the target data (S02). The generated initial recipe is stored in a second database. Then, each device operates based on the initial recipe, and the substrate is processed based on the initial recipe (S03).

[0068] When the dicing process progresses and both the second processing data and the third processing data are acquired (S04), the control unit reads out the third recipe stored in the second database and starts the simulator. The simulator calculates predicted data for the element chip based on the second processing data and the third recipe (S05). The predicted data is stored in the third database.

[0069] Next, the difference between the calculated predicted data and the third processing data, which is an actual value, is calculated (S06). The control unit determines whether the absolute value of this difference is within a set threshold value (S07). If it is determined that the absolute value of the difference is within the threshold value, it is determined whether to change the third recipe (S08). The subsequent steps (S09 to S11) are performed in the same manner as steps S06 to S08 shown in FIG.

[0070] On the other hand, if it is determined that the absolute value of the difference is not within the threshold, the control unit uses a predetermined algorithm to identify the causative device and calculate the maintenance timing (S12).Then, the control unit controls the notification unit to notify the operator of the maintenance timing of the causative device (S13).

[0071] B. Dicing Method The dicing method according to the present embodiment includes a protective layer forming step of forming a protective layer on the surface of the substrate based on a first recipe, a patterning step of forming a mask by patterning the protective layer based on a second recipe, a plasma processing step of forming a plurality of device chips by plasma etching the substrate exposed from the mask based on a third recipe, a measurement step of acquiring at least one of first processing data on the protective layer, second processing data on the mask, and third processing data on the device chips, a recipe modification step of determining whether or not to modify the recipe based on at least one of the first processing data, the second processing data, and the third processing data, and modifying any of the above recipes if the recipe modification is necessary, and a feedback step of feeding back the modified recipe to the control of the corresponding process. If the third recipe is modified, the modified recipe may be fed forward.

[0072] When the first recipe is changed, the changed recipe is fed back to the protective layer forming apparatus, and a subsequent protective layer forming process is performed using the changed first recipe. When the second recipe is changed, the changed recipe is fed back to the patterning apparatus, and a subsequent patterning process is performed using the changed second recipe. When the third recipe is changed, the changed recipe is fed back or fed forward to the plasma processing apparatus. When fed back, a subsequent plasma processing process is performed using the changed third recipe. When fed forward, the current plasma processing process is performed using the changed third recipe.

[0073] The dicing method according to this embodiment will be described below by dividing it into mode I in which a change to the first recipe is determined, mode II in which a change to the second recipe is determined, and mode III in which a change to the third recipe is determined. The exemplified modes are executed by the above-mentioned dicing system. However, the dicing method according to this embodiment is not limited to this.

[0074] [Aspect I] In this aspect, it is determined whether or not to change the first recipe based on at least one of the first processing data, the second processing data, and the third processing data.

[0075] (Aspect Ia) In this embodiment, the second processing data related to the mask formed on the m-th substrate (m is an integer equal to or greater than 1) is used to determine whether or not to modify the first recipe for controlling the protective layer forming process. The modified first recipe is fed back to the protective layer forming process for the m+n-th substrate (n is an integer equal to or greater than 1). Figure 6 is a flow chart for explaining this embodiment.

[0076] (1) Enter goal data Target data is input to an input section connected to a control section (ST001). The calculation unit generates at least one of a first recipe, a second recipe, and a third recipe from the target data and the first database, etc., using a predetermined algorithm (ST002). The generated initial recipe is stored in the second database.

[0077] (2) Formation of a protective layer Based on the first recipe, a protective layer is formed on the surface of the m-th substrate (ST003). The protective layer includes a so-called resist material, for example, a thermosetting resin such as polyimide, a photoresist such as phenolic resin, or a water-soluble resist such as acrylic resin, etc. The protective layer is formed, for example, by forming the resist material into a sheet and then attaching the sheet to the laminated substrate, or by applying a raw material liquid of the resist material to the substrate using a method such as spin coating or spray coating.

[0078] The thickness of the protective layer is not particularly limited, but is preferably such that it is not completely removed by the plasma etching in the subsequent process. The thickness of the protective layer is set to be equal to or greater than the total amount (thickness) of the protective layer etched in the plasma etching, for example. The thickness of the protective layer is, for example, 5 μm or more and 60 μm or less.

[0079] From the viewpoint of ease of handling, it is preferable that the substrate is processed after the protective layer forming step while being supported by a supporting member. The supporting member is, for example, a resin film. The outer periphery of the supporting member is, for example, fixed to a metal frame.

[0080] (3) Patterning The protective layer is patterned based on the second recipe to form a mask (ST004), which exposes a portion of the substrate through the mask.

[0081] The mask is formed, for example, by removing, by photolithography, a region of a protective layer formed of photoresist that corresponds to a region (division region) to be removed by etching of the substrate. A protective layer formed of a thermosetting resin or a water-soluble resist may be removed by laser scribing to divide the substrate. In the patterning, a part of the substrate may be removed together with the protective layer.

[0082] (4) Acquisition of the second processing data Second processing data relating to the formed mask is acquired (ST005). In this embodiment, the thickness of the mask is acquired as the second processing data.

[0083] (5) Plasma Etching The portion of the m-th substrate that is exposed from the mask is plasma etched based on the third recipe (ST006), thereby forming a plurality of element chips and completing the dicing process for the m-th substrate.

[0084] (6) Changes to the first recipe It is determined whether the second processing data acquired above is within an allowable range (ST007). Specifically, the mask thickness, which is an actual measurement value, is compared with the mask thickness in the target data to determine whether it is allowable.

[0085] If it is determined that the second processing data exceeds the tolerance range set based on the target data, the control unit generates a new first recipe (ST008) and changes the first recipe. The changed first recipe is used in the process of forming a protective layer for the (m+n)th substrate (ST011). This forms a mask having a predetermined thickness, and prevents the surface of the element chip from being directly exposed to plasma and damaged during plasma etching. On the other hand, if it is determined that the second processing data is within the allowable range, the first recipe is not changed, and the initial first recipe is applied to the (m+n)th substrate.

[0086] For the (m+n)th and subsequent substrates, masks are formed in the same manner as above, and it is determined whether the first recipe needs to be changed (ST012 to ST015). Then, if necessary, the first recipe is changed (ST016).

[0087] (Aspect Ib) This embodiment is similar to embodiment Ia, except that the modified first recipe is fed back to the formation of the protective layer on the m-th substrate, thereby obtaining high-quality device chips with a high yield.

[0088] This embodiment can be applied when the mask is patterned by a method other than laser processing. This is because a part of the substrate may be removed during patterning in laser processing. When the mask is patterned by another method, the mask is once removed and a protective layer is formed again on the m-th substrate based on the changed first recipe. FIG. 7 is a flow chart explaining this embodiment.

[0089] In this embodiment, before the plasma processing is performed on the m-th substrate, it is determined whether the second processing data is within an allowable range (ST006). If it is determined that the second processing data is outside the allowable range, the first recipe is changed (ST007). The changed first recipe is used to re-form the protective layer on the m-th substrate. On the other hand, if it is determined that the second processing data is within the allowable range, the first recipe is not changed, and the plasma processing is performed on the m-th substrate using the initial recipe (ST008).

[0090] (Aspect Ic) This embodiment is similar to embodiment Ia, except that the third processing data for the component chip made from the m-th substrate is used. The modified first recipe is fed back to the formation of the protective layer for the m+n-th substrate. Figure 8 is a flow chart for explaining this embodiment.

[0091] In this embodiment, after plasma etching, third processing data for the fabricated element chip is obtained (ST006). As the third processing data, for example, the thickness of the mask covering the surface of the element chip is obtained. The mask thickness, which is an actual measurement value, is compared with the mask thickness in the target data to determine whether it is acceptable (ST007). If it is not acceptable, the first recipe is changed (ST008). The changed first recipe is used to form a protective layer for the (m+n)th substrate. As a result, a mask having the desired thickness is formed.

[0092] In the above-described embodiment Ia and embodiment Ib, the mask thickness is used as the second processing data, but the present invention is not limited to this. If the surface of the substrate has bumps or pad electrodes, data on the covering state of the bumps may be used as at least one of the first processing data, the second processing data, and the third processing data.

[0093] When a substrate having projections and recesses is used, the thickness of the protective layer or the like covering the projections is likely to be thinner than that of the recesses. As a result, the mask covering the projections may be completely removed during etching, and the projections may be directly exposed to plasma and damaged. By modifying the first recipe using data relating to the coverage state of the projections and recesses as at least one of the first processing data, the second processing data, and the third processing data, the projections can be covered with a protective layer or the like of sufficient thickness. This improves the quality of the resulting device chip.

[0094] In addition, in the aspects Ia, Ib, and Ic, the second processing data or the third processing data is used, but the first processing data may be used to determine whether or not the recipe needs to be changed. In this case, after the protective layer is formed, the first processing data related to the formed protective layer is obtained. The first processing data is preferably the thickness of the protective layer.

[0095] [Aspect II] In this embodiment, it is determined whether or not to change the second recipe based on the second processing data and / or the third processing data.

[0096] (Aspect II-a) In this embodiment, the second processing data for the mask formed on the m-th substrate is used to determine whether or not to change the second recipe for controlling the patterning process. In other respects, the embodiment II-a is similar to the embodiment Ia. The changed second recipe is fed back to the patterning of the m+n-th substrate. Figure 9 is a flow chart explaining this embodiment.

[0097] In this embodiment, for example, a patterning width is acquired as the second processing data. The patterning width, which is an actual measurement value, is compared with the patterning width in the target data to determine whether it is acceptable or not.

[0098] 10 is a cross-sectional view showing a schematic view of a part of the m-th substrate after the patterning process when the second processing data exceeds the allowable range set based on the target data. A mask 30 is formed on one main surface of the substrate 10. The other main surface of the substrate 10 is attached to and supported by a support member 40. In the m-th substrate 10, the patterning width W is larger than the target value W0 and exceeds the allowable range (W>>W0).

[0099] If the mth substrate is plasma-treated based on the initial recipe, the amount of etching will increase, and the distance between the chips will become larger. If the substrate is supported by a support member, the support member functions as a stop layer. Therefore, excessive plasma treatment will cause the end face of the chip on the support member side to be significantly recessed inward.

[0100] FIG. 11 is a cross-sectional view showing a schematic view of a part of the m-th substrate after the plasma processing step when the second processing data exceeds the allowable range set based on the target data. A plurality of element chips 20 are produced from the m-th substrate. The distance D1 between the element chips 20 on the mask 30 side and the distance D2 on the support member 40 side are both larger than the target value D0 and exceed the allowable range (D1, D2>>D0). Furthermore, the end face of the element chip 20 on the support member 40 side is recessed inward, and the distance D2 between the element chips 20 is larger than the distance D1. This indicates that the perpendicularity of the end faces of the element chips 20 is low.

[0101] Therefore, when patterning the (m+n)th substrate, the modified second recipe is used. This brings the patterning width within the allowable range and into a value suitable for the subsequent plasma processing. This results in uniform shapes of multiple element chips and improves the perpendicularity of the end faces.

[0102] 12 is a cross-sectional view showing a part of the (m+n)th substrate patterned using the modified second recipe, in which the patterning width W is within the allowable range of the target value W0 (W≈W0).

[0103] 13 is a cross-sectional view showing a schematic diagram of a portion of the m+nth substrate that has been subjected to plasma processing. The distance D1 between the element chips 20 on the mask 30 side and the distance D2 on the opposite side of the mask 30 are both within the allowable range of the target value D0 (D1, D2 ≈ D0). Furthermore, the difference between the distance D2 between the element chips 20 and the distance D1 is also small (D1 ≈ D2), and the perpendicularity of the end faces of the element chips 20 is improved.

[0104] (Aspect II-b) This embodiment is similar to embodiment II-a, except that the third processing data for the element chip is used. The modified second recipe is fed back to the patterning of the (m+n)th substrate. Figure 14 is a flow chart for explaining this embodiment.

[0105] In this embodiment, after plasma etching, third processing data for the fabricated element chips is obtained (ST006). For example, the distance between adjacent element chips is obtained as the third processing data. The distance between the element chips, which is an actual measurement value, is compared with the distance between the element chips in the target data to determine whether it is acceptable (ST007). If it is not acceptable, the second recipe is modified (ST008). The modified second recipe is used to form a protective layer for the (m+n)th substrate. This makes the patterning width a value suitable for the subsequent plasma processing. Therefore, the distance between the element chips is optimized.

[0106] [Aspect III] In this embodiment, it is determined whether or not to change the third recipe based on the second processing data and / or the third processing data.

[0107] (Aspect III-a) In this embodiment, the second processing data related to the mask formed on the m-th substrate is used to determine whether or not to change the third recipe for controlling the plasma processing step. In other respects, the embodiment III-a is similar to the embodiment Ia. The changed third recipe is fed back to the plasma processing of the m+n-th substrate. Figure 15 is a flow chart for explaining this embodiment.

[0108] In this embodiment, for example, a patterning width is acquired as the second processing data and compared with the patterning width in the target data. However, in this embodiment, even if the patterning width W, which is an actual measurement value, exceeds the allowable range of the target value W0 (W>>W0), this patterning is permitted and the third recipe is changed. In other words, the quality of the element chip is improved by performing plasma processing under conditions suitable for a wide patterning width.

[0109] However, it is necessary that the element chips produced by the modified third recipe fall within the tolerance of the target data. Therefore, before the plasma processing is performed on the (m+n)th substrate, the simulator may be caused to calculate predicted data regarding the element chips based on the second processing data and the to-be-modified third recipe. If the predicted data falls within the tolerance of the target value, the to-be-modified third recipe is adopted. On the other hand, if the predicted data exceeds the tolerance of the target value, the calculation unit is caused to generate a recipe that falls within the tolerance of the target value, and the to-be-modified third recipe is further modified.

[0110] Here, if the deviation between the second processing data and the target value is excessively large, such as when the shape of the mask is significantly deviated from the target, the calculation unit may not be able to generate a third recipe that falls within the allowable range of the target value. In this case, the patterning is not allowable, and a notification unit or the like notifies the effect. Furthermore, the second recipe for the mask may be changed as necessary. The changed second recipe is fed back to the mask formation for the (m+n)th substrate. Alternatively, all the masks formed on the mth substrate may be removed, and a protective layer and a mask may be formed again on the mth substrate based on the changed second recipe.

[0111] 16 is a cross-sectional view showing a schematic diagram of a portion of the (m+n)th substrate that has been plasma-processed based on the modified third recipe. The distance D1 between the element chips 20 on the mask 30 side and the distance D2 on the opposite side of the mask 30 are both approximately equal to the target value D0 (D1, D2 ≈ D0). Furthermore, the difference between the distance D2 between the element chips 20 and the distance D1 is also small.

[0112] (Aspect III-b) This embodiment is similar to embodiment III-a, except that the modified third recipe is fed forward to the plasma processing of the m-th substrate. Figure 17 is a flow chart illustrating this embodiment.

[0113] In this embodiment, the third recipe modified based on the second processing data for the m-th substrate is used for the plasma processing of the same m-th substrate, thereby obtaining high-quality device chips with a high yield.

[0114] In this embodiment, as in embodiment III-a, the patterning width is obtained as the second processing data and compared with the patterning width in the target data. If the measured patterning width W exceeds the allowable range of the target value W0 (W>>W0), the third recipe is changed. This allows plasma processing suitable for a wide patterning width to be performed, improving the quality of the element chip.

[0115] 18 is a cross-sectional view showing a schematic diagram of a portion of the Nth substrate that has been plasma-processed based on the modified third recipe. The distance D1 between the element chips 20 on the mask 30 side and the distance D2 on the opposite side of the mask 30 are both approximately equal to the target value D0 (D1, D2 ≈ D0). Furthermore, the difference between the distance D2 between the element chips 20 and the distance D1 is also small.

[0116] (Aspect III-c) This embodiment is similar to embodiment III-a, except that the third processing data for the element chip is used. The modified third recipe is fed back to the plasma processing of the (m+n)th substrate. Figure 19 is a flow chart for explaining this embodiment.

[0117] In this embodiment, for example, the size and number of voids formed on the end face of the element chip, and the inclination angle of the end face are acquired as the third processing data. The actual measured values ​​of the parameters representing the shape of the end face of the element chip are compared with the above parameters in the target data to determine whether they are acceptable.

[0118] 20 is a cross-sectional view showing a schematic view of a portion of the m-th substrate that has been subjected to plasma processing. The distance D2 between the element chips 20 is smaller than the distance D1, and the perpendicularity of the end face is reduced. Therefore, when the (m+n)th substrate is subjected to plasma processing, a modified third recipe is used. This optimizes the plasma processing. As a result, the perpendicularity of the end face is improved.

[0119] Although the dicing method according to the present embodiment has been described above by taking specific examples, the dicing method according to the present embodiment is not limited to these examples.

[0120] For example, in each of the above embodiments, the necessity of changing the recipe is determined based on either the second processing data or the third processing data, but the method of determination is not limited to this. The necessity of changing the recipe may be determined based on both the second processing data and the third processing data. For example, if the difference between the second processing data and the target data is large but the third processing data is good, it can be determined that the recipe does not need to be changed. On the other hand, if the second processing data is good but the difference between the third processing data and the target data is large, it can be determined that the recipe needs to be changed. [Industrial Applicability]

[0121] According to the dicing system and dicing method of the present invention, the quality of the obtained element chips is improved, and therefore the dicing system and dicing method of the present invention can be suitably used for manufacturing various element chips. Although the present invention has been described with respect to the presently preferred embodiments, such disclosure should not be interpreted as limiting. Various variations and modifications will no doubt become apparent to those skilled in the art to which the present invention pertains upon reading the above disclosure. Accordingly, the appended claims should be interpreted to cover all variations and modifications without departing from the true spirit and scope of the present invention. [Explanation of symbols]

[0122] 1000A, 1000B, 1000C: Dicing system 100: Control unit 101: Storage section 102: Arithmetic section 103: Device control section 200: Protective layer forming device 300: Patterning device 400: Plasma processing equipment 500: Measuring equipment 600: Input section 700: Simulator 800: Information Department 900: Ordering Department 10: Substrate 20: Element chip 30: Mask 40: Support member D00: Target data D01: First processing data D02: Second processing data D03: Third processing data DB01: First database DB02: Second database

Claims

1. a protective layer forming device for forming a protective layer on a surface of a substrate; a patterning device for patterning the protective layer to form a mask; a plasma processing apparatus for plasma etching the substrate exposed through the mask to form a plurality of element chips; a measuring device that acquires at least one processing data selected from the group consisting of first processing data on the protective layer, second processing data on the mask, and third processing data on the element chip; a control unit that operates at least one apparatus selected from the group consisting of the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus based on a recipe defined for each apparatus; the control unit determines whether or not to change the recipe based on at least one of the at least one acquired processing data, and when the recipe needs to be changed, changes at least one of the recipes, and operates at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on the changed recipe, The control unit determines whether or not to change the recipe based on the third processing data.

2. The dicing system according to claim 1 , wherein the third processing data includes a parameter representing a shape of an end face of the element chip.

3. The dicing system according to claim 2 , wherein the control unit changes the recipe for the plasma processing apparatus when a change in the recipe is required.

4. 2. The dicing system according to claim 1, wherein the third processing data includes a parameter representing a surface state of a mask that covers the surface of the component chip.

5. The dicing system according to claim 4 , wherein the control unit changes at least one of the recipes related to the protective layer forming device and the patterning device when the recipe needs to be changed.

6. a protective layer forming device for forming a protective layer on a surface of a substrate; a patterning device for patterning the protective layer to form a mask; a plasma processing apparatus for plasma etching the substrate exposed through the mask to form a plurality of element chips; a measuring device that acquires at least one processing data selected from the group consisting of first processing data on the protective layer, second processing data on the mask, and third processing data on the element chip; a control unit that operates at least one apparatus selected from the group consisting of the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus based on a recipe defined for each apparatus; the control unit determines whether or not to change the recipe based on at least one of the at least one acquired processing data, and when the recipe needs to be changed, changes at least one of the recipes, and operates at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on the changed recipe, The control unit determines whether or not to change the recipe based on the second processing data.

7. The dicing system according to claim 6 , wherein the second processing data includes a patterning width.

8. The dicing system according to claim 7 , wherein the control unit changes the recipe for the patterning device when a change in the recipe is required.

9. a protective layer forming device for forming a protective layer on a surface of a substrate; a patterning device for patterning the protective layer to form a mask; a plasma processing apparatus for plasma etching the substrate exposed through the mask to form a plurality of element chips; a measuring device that acquires at least one processing data selected from the group consisting of first processing data on the protective layer, second processing data on the mask, and third processing data on the element chip; a control unit that operates at least one apparatus selected from the group consisting of the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus based on a recipe defined for each apparatus; the control unit determines whether or not to change the recipe based on at least one of the at least one acquired processing data, and when the recipe needs to be changed, changes at least one of the recipes, and operates at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on the changed recipe, a simulator that calculates prediction data for the element chip based on the second processing data and the recipe for the plasma processing apparatus; a calculation unit that calculates a difference between the predicted data and the third processing data.

10. A notification unit is further provided to notify the user of a maintenance time for the plasma processing apparatus.

10. The dicing system according to claim 9, wherein the control unit causes the notification unit to notify the maintenance time when an absolute value of the difference is greater than a preset threshold value.

11. a protective layer forming step of forming a protective layer on a surface of the substrate based on a first recipe; a patterning step of forming a mask by patterning the protective layer based on a second recipe; a plasma processing step of plasma etching the substrate exposed through the mask based on a third recipe to form a plurality of device chips; a measuring step of acquiring at least one processing data selected from the group consisting of first processing data on the protective layer, second processing data on the mask, and third processing data on the element chip; a recipe changing step of determining whether or not to change the second recipe based on at least one of the at least one piece of acquired processing data, and changing the second recipe if the second recipe needs to be changed; a feedback step of feeding back the changed second recipe to control of the patterning step.

12. a protective layer forming step of forming a protective layer on a surface of the substrate based on a first recipe; a patterning step of forming a mask by patterning the protective layer based on a second recipe; a plasma processing step of plasma etching the substrate exposed through the mask based on a third recipe to form a plurality of device chips; a measuring step of acquiring at least one processing data selected from the group consisting of first processing data on the protective layer, second processing data on the mask, and third processing data on the element chip; a recipe changing step of determining whether or not to change the third recipe based on at least one of the at least one piece of acquired processing data, and changing the third recipe if the third recipe needs to be changed; a feedback step of feeding back the changed third recipe to control of the plasma processing step.

13. a protective layer forming step of forming a protective layer on a surface of the substrate based on a first recipe; a patterning step of forming a mask by patterning the protective layer based on a second recipe; a plasma processing step of plasma etching the substrate exposed through the mask based on a third recipe to form a plurality of device chips; a measuring step of acquiring second processing data relating to the mask; a third recipe changing step of determining whether or not to change the third recipe based on the acquired second processing data, and changing the third recipe if the third recipe needs to be changed; a feedforward step of feeding forward the modified third recipe into control of the plasma processing step.

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