Bonding device and bonding method

Abstract

To provide a technique capable of reducing distortion of a layered substrate.SOLUTION: A bonding device includes a first holding part, a second holding part, a suction pressure generation part, and a lift pin. The first holding part holds a first substrate. The second holding part is disposed at a position opposite to the first holding part and has a suction surface for sucking a second substrate to be bonded to the first substrate. The suction pressure generation part generates suction pressure on the suction surface. The lift pin separates the second substrate on the suction surface from the second holding part. The second holding part is provided with a space including an opening through which the lift pin passes, and the space is controlled at a pressure lower than atmospheric pressure.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present disclosure relates to a bonding apparatus and a bonding method. [Background technology]

[0002] Conventionally, a method for bonding substrates such as semiconductor wafers involves modifying the surfaces of the substrates to be bonded, making the modified substrate surfaces hydrophilic, and bonding the hydrophilized substrates together by van der Waals forces and hydrogen bonds (intermolecular forces) (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-95579 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques that can reduce distortion in polymeric substrates. [Means for solving the problem]

[0005] A bonding apparatus according to an embodiment of the present disclosure includes a first holding unit, a second holding unit, an adsorption pressure generating unit, and a lift pin. The first holding unit holds a first substrate. The second holding unit is provided at a position facing the first holding unit and has an adsorption surface that adsorbs a second substrate to be bonded to the first substrate. The adsorption pressure generating unit generates an adsorption pressure on the adsorption surface. The lift pin separates the second substrate on the adsorption surface from the second holding unit. The second holding unit is provided with a space including an opening through which the lift pin passes, and the space is controlled to a pressure lower than atmospheric pressure. Effect of the Invention

[0006] According to the present disclosure, distortion of the laminated substrate can be reduced. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view showing the configuration of a joining system according to an embodiment. [Diagram 2] FIG. 2 is a schematic side view showing the configuration of the joining system according to the embodiment. [Diagram 3] FIG. 3 is a schematic side view of the upper wafer and the lower wafer according to the embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view showing the configuration of a surface modification apparatus according to an embodiment. [Diagram 5] FIG. 5 is a schematic plan view showing the configuration of the bonding device according to the embodiment. [Figure 6] FIG. 6 is a schematic side view showing the configuration of the joining device according to the embodiment. [Figure 7] FIG. 7 is a schematic side view showing the configurations of the upper chuck and the lower chuck of the joining device according to the embodiment. [Figure 8] FIG. 8 is a flowchart illustrating a part of a processing procedure of the processing executed by the bonding system according to the embodiment. [Figure 9] FIG. 9 is an enlarged cross-sectional view showing the configuration of the lower chuck according to the embodiment. [Figure 10] FIG. 10 is an enlarged top view showing the configuration of the suction surface of the lower chuck according to the embodiment. [Figure 11] FIG. 11 is a diagram showing a simulation model of the displacement of the lower wafer attracted to the lower chuck in the reference example and the simulation results. [Figure 12] FIG. 12 is a diagram showing a simulation model and a simulation result of the displacement of the lower wafer attracted to the lower chuck according to the embodiment. [Figure 13] FIG. 13 is an enlarged cross-sectional view showing the configuration of a lower chuck according to the first modification of the embodiment. [Figure 14] FIG. 14 is a diagram showing a simulation model and a simulation result of the displacement of the lower wafer attracted to the lower chuck according to the first modification of the embodiment. [Figure 15] FIG. 15 is an enlarged cross-sectional view showing the configuration of a lower chuck according to the second modification of the embodiment. [Figure 16] FIG. 16 is an enlarged cross-sectional view showing the configuration of a lower chuck according to the third modification of the embodiment. [Figure 17] FIG. 17 is an enlarged top view showing the configuration of the suction surface of the lower chuck according to the third modification of the embodiment. [Figure 18] FIG. 18 is an enlarged cross-sectional view showing the configuration of a lower chuck according to the fourth modification of the embodiment. [Figure 19] FIG. 19 is an enlarged cross-sectional view showing the configuration of a lower chuck according to the fifth modification of the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, with reference to the attached drawings, an embodiment of the bonding device and bonding method disclosed in the present application will be described in detail. Note that the present disclosure is not limited to the embodiment shown below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from the reality. Furthermore, there may be parts in which the dimensional relationships and ratios differ between the drawings.

[0009] Conventionally, a known method for bonding substrates such as semiconductor wafers involves modifying the surfaces of the substrates to be bonded, making the modified substrate surfaces hydrophilic, and bonding the hydrophilized substrates together using van der Waals forces and hydrogen bonds (intermolecular forces).

[0010] On the other hand, when hydrophilized substrates are bonded together to form a laminated substrate, if any of the substrates is locally deformed, the deformation may cause distortion in the laminated substrate, which may reduce the yield of elements formed in the laminated substrate.

[0011] Therefore, there is a need to develop a technology that can overcome the above-mentioned problems and reduce the distortion of the laminated substrate.

[0012] <Configuration of the joining system> First, the configuration of a bonding system 1 according to an embodiment will be described with reference to Figs. 1 to 3. Fig. 1 is a schematic plan view showing the configuration of the bonding system 1 according to the embodiment, and Fig. 2 is a schematic side view of the same. Fig. 3 is a schematic side view of an upper wafer and a lower wafer according to the embodiment. Note that, in order to make the description easier to understand, each of the drawings referred to below may show an orthogonal coordinate system in which the vertical upward direction is the positive direction of the Z axis.

[0013] The bonding system 1 shown in FIG. 1 forms a laminated substrate T by bonding a first substrate W1 and a second substrate W2 together.

[0014] The first substrate W1 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer on which a plurality of electronic circuits are formed. The second substrate W2 is a bare wafer on which no electronic circuits are formed. The first substrate W1 and the second substrate W2 have approximately the same diameter. The second substrate W2 may have electronic circuits formed thereon.

[0015] Hereinafter, the first substrate W1 will be referred to as the "upper wafer W1," and the second substrate W2 will be referred to as the "lower wafer W2." In other words, the upper wafer W1 is an example of the first substrate, and the lower wafer W2 is an example of the second substrate. Furthermore, the upper wafer W1 and the lower wafer W2 may be collectively referred to as the "wafer W."

[0016] 3, of the surfaces of the upper wafer W1, the surface to be bonded to the lower wafer W2 will be referred to as a "bonding surface W1j," and the surface opposite the bonding surface W1j will be referred to as a "non-bonding surface W1n." Also, of the surfaces of the lower wafer W2, the surface to be bonded to the upper wafer W1 will be referred to as a "bonding surface W2j," and the surface opposite the bonding surface W2j will be referred to as a "non-bonding surface W2n."

[0017] 1, the bonding system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged in the positive direction of the X-axis in the order of the loading / unloading station 2 and the processing station 3. The loading / unloading station 2 and the processing station 3 are connected together.

[0018] The loading / unloading station 2 includes a mounting table 10 and a transfer area 20. The mounting table 10 includes a plurality of mounting plates 11. Cassettes C1, C2, and C3, each of which stores a plurality of substrates (e.g., 25 substrates) in a horizontal state, are placed on each of the mounting plates 11. For example, the cassette C1 is a cassette that stores an upper wafer W1, the cassette C2 is a cassette that stores a lower wafer W2, and the cassette C3 is a cassette that stores a laminated substrate T.

[0019] The transport area 20 is disposed adjacent to the mounting table 10 on the positive side in the X-axis direction. In the transport area 20, a transport path 21 extending in the Y-axis direction and a transport device 22 movable along the transport path 21 are provided.

[0020] The transfer device 22 is movable not only in the Y-axis direction but also in the X-axis direction and rotatable around the Z-axis. The transfer device 22 transfers the upper wafer W1, the lower wafer W2, and the laminated substrate T between the cassettes C1 to C3 placed on the mounting plate 11 and a third processing block G3 of the processing station 3, which will be described later.

[0021] The number of cassettes C1 to C3 placed on the placement plate 11 is not limited to that shown in the figure. In addition to the cassettes C1, C2, and C3, a cassette for recovering defective substrates may be placed on the placement plate 11.

[0022] In the processing station 3, a plurality of processing blocks equipped with various devices, for example, three processing blocks G1, G2, and G3, are provided. For example, a first processing block G1 is provided on the front side (negative Y-axis side in FIG. 1) of the processing station 3, and a second processing block G2 is provided on the rear side (positive Y-axis side in FIG. 1) of the processing station 3. In addition, a third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (negative X-axis side in FIG. 1).

[0023] In the first processing block G1, a surface modification device 30 is disposed that modifies the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2 by plasma of a processing gas. The surface modification device 30 modifies the bonding surfaces W1j, W2j by breaking the bonds of SiO2 on the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2 to single-bonded SiO, thereby making the bonding surfaces W1j, W2j more likely to be hydrophilized thereafter.

[0024] In the surface modification device 30, for example, a given process gas is excited to be plasmatized and ionized in a reduced pressure atmosphere. Ions of elements contained in the process gas are irradiated onto the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2, whereby the bonding surfaces W1j, W2j are plasma-processed and modified. Details of the surface modification device 30 will be described later.

[0025] The second processing block G2 includes a surface hydrophilizing device 40 and a bonding device 41. The surface hydrophilizing device 40 hydrophilizes the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2, for example, by pure water, and cleans the bonding surfaces W1j, W2j.

[0026] In the surface hydrophilization device 40, pure water is supplied onto the upper wafer W1 or the lower wafer W2 while rotating the upper wafer W1 or the lower wafer W2 held by, for example, a spin chuck. As a result, the pure water supplied onto the upper wafer W1 or the lower wafer W2 spreads over the bonding surfaces W1j, W2j of the upper wafer W1 or the lower wafer W2, and the bonding surfaces W1j, W2j are hydrophilized.

[0027] The bonding device 41 bonds the upper wafer W1 and the lower wafer W2. The bonding device 41 will be described in detail later.

[0028] As shown in FIG. 2, in the third processing block G3, transition (TRS) devices 50 and 51 for the upper wafer W1, the lower wafer W2, and the laminated substrate T are provided in two stages in this order from the bottom.

[0029] 1, a transfer region 60 is formed in an area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transfer device 61 is disposed in the transfer region 60. The transfer device 61 has a transfer arm that is movable, for example, in the vertical direction, the horizontal direction, and around the vertical axis.

[0030] The transfer device 61 moves within the transfer region 60 to transfer the upper wafer W1, the lower wafer W2, and the laminated substrate T to given devices within the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transfer region 60.

[0031] The bonding system 1 also includes a control device 4. The control device 4 controls the operation of the bonding system 1. The control device 4 is, for example, a computer, and includes a control unit 5 and a storage unit 6. The storage unit 6 stores programs for controlling various processes such as the bonding process. The control unit 5 controls the operation of the bonding system 1 by reading and executing the programs stored in the storage unit 6.

[0032] Such a program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 6 of the control device 4. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

[0033] <Configuration of surface modification equipment> Next, the configuration of the surface modification apparatus 30 will be described with reference to Fig. 4. Fig. 4 is a schematic cross-sectional view showing the configuration of the surface modification apparatus 30.

[0034] 4, the surface modification apparatus 30 has a processing vessel 70 whose interior can be sealed. A loading / unloading port 71 for the upper wafer W1 or the lower wafer W2 is formed on a side surface of the processing vessel 70 on the transfer region 60 (see FIG. 1) side, and a gate valve 72 is provided at the loading / unloading port 71.

[0035] A stage 80 is disposed inside the processing vessel 70. The stage 80 is, for example, a lower electrode, and is made of a conductive material such as aluminum. A plurality of driving units 81, each including, for example, a motor, are provided below the stage 80. The plurality of driving units 81 raise and lower the stage 80.

[0036] An exhaust ring 103 having a plurality of baffle holes is disposed between the stage 80 and the inner wall of the processing vessel 70. The exhaust ring 103 allows the atmosphere in the processing vessel 70 to be uniformly exhausted from within the processing vessel 70.

[0037] A power feed rod 104 made of a conductor is connected to the underside of the stage 80. A first high frequency power supply 106 is connected to the power feed rod 104 via a matching device 105 formed of, for example, a blocking capacitor. During plasma processing, a given high frequency voltage is applied to the stage 80 from the first high frequency power supply 106.

[0038] An upper electrode 110 is disposed inside the processing vessel 70. The upper surface of the stage 80 and the lower surface of the upper electrode 110 are disposed parallel to each other and facing each other with a given gap therebetween. The gap between the upper surface of the stage 80 and the lower surface of the upper electrode 110 is adjusted by a driving unit 81.

[0039] The upper electrode 110 is grounded and connected to a ground potential. Since the upper electrode 110 is grounded in this manner, damage to the lower surface of the upper electrode 110 during plasma processing can be suppressed.

[0040] In this manner, a high frequency voltage is applied from the first high frequency power supply 106 to the stage 80 serving as the lower electrode, whereby plasma is generated within the processing vessel 70 .

[0041] In the embodiment, the stage 80, the power feed rod 104, the matching box 105, the first high frequency power supply 106, the upper electrode 110, and the matching box are an example of a plasma generating mechanism that generates plasma of the processing gas in the processing vessel 70. The first high frequency power supply 106 is controlled by the control unit 5 of the control device 4 described above.

[0042] A hollow portion 120 is formed inside the upper electrode 110. A gas supply pipe 121 is connected to the hollow portion 120. The gas supply pipe 121 is connected to a gas supply source 122 that stores a processing gas and a static elimination gas therein. The gas supply pipe 121 is provided with a supply device group 123 including valves and flow rate regulators that control the flow of the processing gas and the static elimination gas.

[0043] The processing gas and the static elimination gas supplied from the gas supply source 122 are flow-controlled by a supply device group 123 and introduced into the hollow portion 120 of the upper electrode 110 via a gas supply pipe 121. For example, oxygen gas, nitrogen gas, argon gas, etc. are used as the processing gas. For example, an inert gas such as nitrogen gas or argon gas is used as the static elimination gas.

[0044] A baffle plate 124 for promoting uniform diffusion of the processing gas and the static elimination gas is provided inside the hollow portion 120. A large number of small holes are provided in the baffle plate 124. A large number of gas outlets 125 for ejecting the processing gas and the static elimination gas from the hollow portion 120 into the processing vessel 70 are formed on the lower surface of the upper electrode 110.

[0045] An intake port 130 is formed in the processing vessel 70. An intake pipe 132 communicating with a vacuum pump 131 that reduces the pressure inside the processing vessel 70 to a given vacuum level is connected to the intake port 130.

[0046] The upper surface of the stage 80, i.e., the surface facing the upper electrode 110, is a horizontal surface that is circular in plan view and has a diameter larger than those of the upper wafer W1 and the lower wafer W2. A stage cover 90 is placed on the upper surface of the stage 80, and the upper wafer W1 or the lower wafer W2 is placed on a placement portion 91 of the stage cover 90.

[0047] <Configuration of the joining device> Next, the configuration of the joining device 41 will be described with reference to Fig. 5 and Fig. 6. Fig. 5 is a schematic plan view showing the configuration of the joining device 41 according to the embodiment, and Fig. 6 is a schematic side view showing the configuration of the joining device 41 according to the embodiment.

[0048] 5, the bonding apparatus 41 has a processing container 190 whose interior can be sealed. A loading / unloading port 191 for the upper wafer W1, the lower wafer W2, and the laminated substrate T is formed on a side surface of the processing container 190 facing the transfer region 60, and an opening / closing shutter 192 is provided at the loading / unloading port 191.

[0049] The inside of the processing vessel 190 is divided into a transfer region T1 and a processing region T2 by an inner wall 193. The above-mentioned loading / unloading port 191 is formed on a side surface of the processing vessel 190 in the transfer region T1. Further, a loading / unloading port 194 for the upper wafer W1, the lower wafer W2, and the laminated substrate T is also formed in the inner wall 193.

[0050] The inside of the processing vessel 190 is maintained at a given constant humidity by a humidity retention mechanism (not shown), so that the bonding device 18 can perform the bonding process of the upper wafer W1 and the lower wafer W2 in a stable environment.

[0051] A transition 200 is provided on the Y-axis negative direction side of the transfer region T1 for temporarily placing the upper wafer W1, the lower wafer W2, and the overlapped substrate T. The transition 200 is formed, for example, in two stages, and any two of the upper wafer W1, the lower wafer W2, and the overlapped substrate T can be placed thereon at the same time.

[0052] A transfer mechanism 201 is provided in the transfer region T1. The transfer mechanism 201 has a transfer arm that is movable, for example, in the vertical direction, the horizontal direction, and around a vertical axis. The transfer mechanism 201 transfers the upper wafer W1, the lower wafer W2, and the laminated substrate T within the transfer region T1 or between the transfer region T1 and the processing region T2.

[0053] A position adjustment mechanism 210 that adjusts the horizontal orientation of the upper wafer W1 and the lower wafer W2 is provided on the Y-axis positive side of the transfer region T1. The position adjustment mechanism 210 detects the positions of the notches of the upper wafer W1 and the lower wafer W2 with a detection unit (not shown) while rotating the upper wafer W1 and the lower wafer W2 that are held by suction on a holding unit (not shown).

[0054] Thereby, the position adjustment mechanism 210 adjusts the position of the notch portion to adjust the horizontal orientation of the upper wafer W1 and the lower wafer W2. Further, in the transfer region T1, an inversion mechanism 220 that inverts the front and back surfaces of the upper wafer W1 is provided.

[0055] 6, an upper chuck 230 and a lower chuck 231 are provided in the processing region T2. ​​The upper chuck 230 suction-holds the upper wafer W1 from above. The lower chuck 231 is provided below the upper chuck 230 and suction-holds the lower wafer W2 from below. The upper chuck 230 is an example of a first holding part, and the lower chuck 231 is an example of a second holding part.

[0056] 6, the upper chuck 230 is supported by a support member 300 provided on the ceiling surface of the processing vessel 190. The support member 300 is provided with an upper imaging unit (not shown) that captures an image of the bonding surface W2j of the lower wafer W2 held by the lower chuck 231. The upper imaging unit is provided adjacent to the upper chuck 230.

[0057] 5 and 6, the lower chuck 231 is supported by a first lower chuck moving part 310 provided below the lower chuck 231. The first lower chuck moving part 310 moves the lower chuck 231 in the horizontal direction (Y-axis direction) as described below. The first lower chuck moving part 310 is configured to be capable of moving the lower chuck 231 in the vertical direction and to be rotatable around a vertical axis.

[0058] 5, the first lower chuck moving part 310 is provided with a lower imaging part (not shown) that images the bonding surface W1j of the upper wafer W1 held by the upper chuck 230. The lower imaging part is provided adjacent to the lower chuck 231.

[0059] 5 and 6, the first lower chuck moving part 310 is provided on the lower surface side of the first lower chuck moving part 310 and is attached to a pair of rails 315 extending in the horizontal direction (Y-axis direction). The first lower chuck moving part 310 is configured to be movable along the rails 315.

[0060] The pair of rails 315 is provided on a second lower chuck moving part 316. The second lower chuck moving part 316 is attached to a pair of rails 317 that are provided on the lower surface side of the second lower chuck moving part 316 and extend in the horizontal direction (X-axis direction).

[0061] The second lower chuck moving part 316 is configured to be movable along the rails 317, that is, to move the lower chuck 231 in the horizontal direction (X-axis direction). The pair of rails 317 is provided on a mounting table 318 provided on the bottom surface of the processing vessel 190.

[0062] Next, the configuration of the upper chuck 230 and the lower chuck 231 in the joining device 41 will be described with reference to Fig. 7. Fig. 7 is a schematic side view showing the configuration of the upper chuck 230 and the lower chuck 231 of the joining device 41 according to the embodiment.

[0063] 7, the upper chuck 230 is partitioned into a plurality of, for example, three, regions 230a, 230b, and 230c. These regions 230a, 230b, and 230c are provided in this order from the center toward the peripheral portion (outer periphery) of the upper chuck 230. The region 230a has a circular shape in a plan view, and the regions 230b and 230c have annular shapes in a plan view.

[0064] 7, suction ports 240a, 240b, 240c for suction-holding the upper wafer W1 are provided independently in the respective regions 230a, 230b, 230c. Different suction pressure generating units 241a, 241b, 241c are connected to the respective suction ports 240a, 240b, 240c. In this manner, the upper chuck 230 is configured to be able to generate suction pressure for the upper wafer W1 for each of the regions 230a, 230b, 230c.

[0065] A through hole 243 is formed in the center of the upper chuck 230, penetrating the upper chuck 230 in the thickness direction. The center of the upper chuck 230 corresponds to the center W1a of the upper wafer W1 attracted and held by the upper chuck 230. A pressing pin 253 of a substrate pressing mechanism 250 is inserted into the through hole 243.

[0066] The substrate pressing mechanism 250 is provided on the upper surface of the upper chuck 230, and presses the center portion W1a of the upper wafer W1 with a pressing pin 253. The pressing pin 253 is provided so as to be linearly movable along a vertical axis by a cylinder portion 251 and an actuator portion 252, and presses the opposing substrate (in this embodiment, the upper wafer W1) with its tip.

[0067] Specifically, the pressing pin 253 serves as a starter that first brings the center W1a of the upper wafer W1 and the center W2a of the lower wafer W2 into contact with each other when bonding the upper wafer W1 and the lower wafer W2 together, as described below.

[0068] The lower chuck 231 is substantially disk-shaped and is partitioned into a plurality of regions, for example, two regions 231a and 231b. These regions 231a and 231b are provided in this order from the center toward the periphery of the lower chuck 231. The region 231a has a circular shape in a plan view, and the region 231b has an annular shape in a plan view.

[0069] In each of the regions 231a, 231b, suction ports 260a, 260b for suction-holding the lower wafer W2 are provided independently as shown in Fig. 7. Different suction pressure generating units 280a, 280b are connected to the suction ports 260a, 260b, respectively.

[0070] In this manner, the lower chuck 231 is configured to be able to generate an adsorption pressure for the lower wafer W2 for each of the regions 231a, 231b. In the following description, the adsorption pressure generating units 280a, 280b that generate an adsorption pressure for the lower wafer W2 are collectively referred to as the "adsorption pressure generating unit 280."

[0071] The lower chuck 231 also includes a plurality of lift pins 265 that can be raised and lowered in the vertical direction, and a drive unit 266 that drives the plurality of lift pins 265. In the lower chuck 231, for example, the lower wafer W2 is placed and received in a state in which the lift pins 265 protrude from the suction surface 271, and then the lift pins 265 are lowered to bring the lower wafer W2 into contact with the suction surface 271.

[0072] Subsequently, in the lower chuck 231, the suction pressure generating units 280a and 280b are operated to suction-hold the lower wafer W2 in the respective regions 231a and 231b as shown in FIG.

[0073] On the periphery of the lower chuck 231, stopper members 263 for preventing the upper wafer W1, the lower wafer W2, and the laminated substrate T from jumping out or slipping off the lower chuck 231 are provided at a plurality of locations, for example, five locations.

[0074] <Processing performed by the joining system> Next, details of the processes executed by the bonding system 1 according to the embodiment will be described with reference to Fig. 8. Note that the various processes described below are executed based on the control by the control unit 5 of the control device 4.

[0075] 8 is a flowchart showing a part of a processing procedure executed by the bonding system 1 according to the embodiment. First, the cassette C1 containing the upper wafers W1, the cassette C2 containing the lower wafers W2, and the empty cassette C3 are placed on a given placement plate 11 of the loading / unloading station 2.

[0076] Thereafter, the upper wafer W1 is removed from the cassette C1 by the transfer device 22 and transferred to the transition device 50 in the third processing block G3 of the processing station 3.

[0077] Next, the upper wafer W1 is transferred to the surface modification apparatus 30 in the first processing block G1 by the transfer device 61. At this time, the gate valve 72 is opened, and the inside of the processing container 70 is exposed to atmospheric pressure. In the surface modification apparatus 30, the processing gas is excited to be turned into plasma and ionized in a given reduced pressure atmosphere.

[0078] The ions thus generated are irradiated onto the bonding surface W1j of the upper wafer W1, and the bonding surface W1j is subjected to a plasma treatment, whereby dangling bonds of silicon atoms are formed on the outermost surface of the bonding surface W1j, and the bonding surface W1j of the upper wafer W1 is modified (step S101).

[0079] Next, the upper wafer W1 is transferred to the surface hydrophilization device 40 in the second processing block G2 by the transfer device 61. In the surface hydrophilization device 40, pure water is supplied onto the upper wafer W1 while the upper wafer W1 held by a spin chuck is being rotated.

[0080] Then, the supplied pure water diffuses on the bonding surface W1j of the upper wafer W1. As a result, in the surface modification device 30, OH groups (silanol groups) are attached to the dangling bonds of silicon atoms on the modified bonding surface W1j of the upper wafer W1, making the bonding surface W1j hydrophilic (step S102). In addition, the bonding surface W1j of the upper wafer W1 is cleaned by the pure water.

[0081] Next, the upper wafer W1 is transferred to the bonding device 41 in the second processing block G2 by the transfer device 61. The upper wafer W1 carried into the bonding device 41 is transferred to the position adjustment mechanism 210 via the transition 200. Then, the horizontal orientation of the upper wafer W1 is adjusted by the position adjustment mechanism 210 (step S103).

[0082] Thereafter, the upper wafer W1 is transferred from the position adjustment mechanism 210 to the inversion mechanism 220. Next, in the transfer region T1, the inversion mechanism 220 is operated to invert the front and back surfaces of the upper wafer W1 (step S104). That is, the bonding surface W1j of the upper wafer W1 faces downward.

[0083] Thereafter, the inversion mechanism 220 rotates and moves to a position below the upper chuck 230. Then, the upper wafer W1 is delivered from the inversion mechanism 220 to the upper chuck 230. The upper wafer W1 has its non-bonding surface W1n attracted and held by the upper chuck 230 (step S105).

[0084] While the upper wafer W1 is being processed in the above-mentioned steps S101 to S105, the lower wafer W2 is being processed. First, the transfer device 22 takes out the lower wafer W2 from the cassette C2 and transfers it to the transition device 50 of the processing station 3.

[0085] Next, the lower wafer W2 is transferred by the transfer device 61 to the surface modification device 30, where the bonding surface W2j of the lower wafer W2 is modified (step S106). Note that step S106 is the same process as step S101 described above.

[0086] Thereafter, the lower wafer W2 is transferred by the transfer device 61 to the surface hydrophilization device 40, where the bonding surface W2j of the lower wafer W2 is hydrophilized (step S107). Note that step S107 is the same process as step S102 described above.

[0087] Thereafter, the lower wafer W2 is transferred to the bonding apparatus 41 by the transfer device 61. The lower wafer W2 carried into the bonding apparatus 41 is transferred to the position adjustment mechanism 210 via the transition 200. Then, the horizontal orientation of the lower wafer W2 is adjusted by the position adjustment mechanism 210 (step S108).

[0088] Thereafter, the lower wafer W2 is transferred to the lower chuck 231 and adsorbed and held by the lower chuck 231 (step S109). The lower wafer W2 has its non-bonding surface W2n adsorbed and held by the lower chuck 231 with the notch portion facing a predetermined direction.

[0089] Next, the horizontal positions of the upper wafer W1 held by the upper chuck 230 and the lower wafer W2 held by the lower chuck 231 are adjusted (step S110).

[0090] Next, the first lower chuck moving part 310 moves the lower chuck 231 vertically upward to adjust the vertical positions of the upper chuck 230 and the lower chuck 231. As a result, the vertical positions of the upper wafer W1 held by the upper chuck 230 and the lower wafer W2 held by the lower chuck 231 are adjusted (step S111).

[0091] At this time, the distance between the bonding surface W2j of the lower wafer W2 and the bonding surface W1j of the upper wafer W1 is a preset distance, for example, 80 μm to 100 μm.

[0092] Next, the pressing pin 253 of the substrate pressing mechanism 250 is lowered to press down the center W1a of the upper wafer W1, thereby pressing the center W1a of the upper wafer W1 and the center W2a of the lower wafer W2 with a predetermined force (step S112).

[0093] This starts bonding between the center W1a of the pressed upper wafer W1 and the center W2a of the pressed lower wafer W2. Specifically, since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 have been modified in steps S101 and S106, respectively, van der Waals forces (intermolecular forces) are generated between the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are bonded to each other.

[0094] Furthermore, since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are made hydrophilic in steps S102 and S107, respectively, the OH groups between the bonding surfaces W1j and W2j form hydrogen bonds, and the bonding surfaces W1j and W2j are firmly bonded to each other.

[0095] Thereafter, the bonding area between the upper wafer W1 and the lower wafer W2 expands from the center to the outer periphery of the upper wafer W1 and the lower wafer W2. Thereafter, while the center W1a of the upper wafer W1 and the center W2a of the lower wafer W2 are pressed by the pressing pin 253, the operation of the suction pressure generating unit 241b is stopped to stop the vacuum suction of the upper wafer W1 from the suction port 240b in the region 230b.

[0096] Then, the upper wafer W1 held in the region 230b falls onto the lower wafer W2. After that, the operation of the suction pressure generating unit 241c is stopped to stop the suction of the upper wafer W1 from the suction port 240c in the region 230c.

[0097] In this manner, the vacuum pumping of the upper wafer W1 is stopped stepwise from the center W1a of the upper wafer W1 toward the outer periphery, and the upper wafer W1 drops stepwise onto and comes into contact with the lower wafer W2. Then, the bonding between the bonding surfaces W1j and W2j by the van der Waals forces and hydrogen bonds gradually spreads from the center W1a and W2a toward the outer periphery.

[0098] In this manner, the entire bonding surface W1j of the upper wafer W1 and the entire bonding surface W2j of the lower wafer W2 are brought into contact with each other, and the upper wafer W1 and the lower wafer W2 are bonded together (step S113).

[0099] Thereafter, the pressing pin 253 is raised to the upper chuck 230. Also, the suction of the lower wafer W2 from the suction ports 260a, 260b in the lower chuck 231 is stopped, and the suction and holding of the lower wafer W2 by the lower chuck 231 is released. This ends the bonding process in the bonding device 41.

[0100] <Lower chuck configuration> Next, a detailed configuration of the lower chuck 231 according to the embodiment will be described with reference to Fig. 9 to Fig. 12. Fig. 9 is an enlarged cross-sectional view showing the configuration of the lower chuck 231 according to the embodiment, and Fig. 10 is an enlarged top view showing the configuration of the suction surface 271 of the lower chuck 231 according to the embodiment.

[0101] 9, the lower chuck 231 has lift pins 265 and a drive unit 266, and is configured to be able to transfer the lower wafer W2 by raising and lowering the lift pins 265 with the drive unit 266. In addition, a lip seal 267 is provided at a given position on the lift pins 265. The lip seal 267 is an example of a sealing member.

[0102] The lower chuck 231 has a housing 270 on the upper side of which is provided an adsorption surface 271 for holding the lower wafer W2. Inside the housing 270, a space 272 is formed which accommodates the upper portions of the lift pins 265 and the lip seals 267 and allows the lift pins 265 to move up and down.

[0103] The space 272 has an opening 273 and an expanded diameter portion 274. The opening 273 is a portion through which the lift pins 265 pass when the lift pins 265 rise, and is exposed to the suction surface 271.

[0104] Expanded diameter portion 274 has an inner diameter larger than that of opening 273, and is a portion that accommodates the upper portion of lowered lift pin 265 and lip seal 267. As shown in FIG 9, when lift pin 265 is in the lower position, the gap between housing 270 and lift pin 265 is closed by lip seal 267.

[0105] 10, the suction surface 271 of the housing 270 has a rib 275 and a plurality of support pins 276. As shown in FIG. 10, the rib 275 is formed in a substantially annular shape along the periphery of the opening 273. The plurality of support pins 276 are disposed substantially evenly over the entire surface of the suction surface 271.

[0106] 9, the tip of the rib 275 and the tip of the plurality of support pins 276 are disposed substantially flush with each other. This makes it possible to support the lower wafer W2 substantially horizontally, and to distribute the suction pressure from the suction pressure generating unit 280 substantially evenly over the entire non-bonding surface W2n of the lower wafer W2.

[0107] In the embodiment, an annular rib 275 is formed around the opening 273, so that when the lower wafer W2 is placed on the suction surface 271, the inside and outside of the rib 275 are separated from each other.

[0108] Further, the lower chuck 231 has an adsorption pressure generating unit 280 that generates an adsorption pressure on the adsorption surface 271. The adsorption pressure generating unit 280 has a flow path 281, a valve 282, and a suction mechanism 283. The flow path 281 is connected between the adsorption surface 271 of the housing 270 and the suction mechanism 283.

[0109] The suction mechanism 283 is, for example, a pump, and sucks the lower wafer W2 placed on the suction surface 271 via the valve 282. The control unit 5 operates the valve 282 and the suction mechanism 283 to generate a suction pressure for the lower wafer W2.

[0110] Here, in the embodiment, the suction pressure generating unit 280 sucks not only the suction surface 271 but also the space 272 formed in the housing 270. For example, in the embodiment, the flow path 281 branches and is connected to the expanded diameter portion 274 of the space 272, so that the space 272 formed in the housing 270 is also sucked.

[0111] In the space 272, the gap between the lift pin 265 and the housing 270 is sealed by the lip seal 267, so that in the embodiment, the pressure in the space 272 is controlled to be lower than atmospheric pressure. For example, in the embodiment, the pressure in the space 272 is approximately equal to the suction pressure of the suction surface 271.

[0112] The effect of controlling the pressure in the space 272 to be lower than the atmospheric pressure will be described below. Fig. 11 is a diagram showing a simulation model and a simulation result of the displacement of the lower wafer W2 attracted to the lower chuck 231 in the reference example.

[0113] 11(a), in this reference example, the opening 273 (i.e., the space 272) is at atmospheric pressure when the lower wafer W2 is suctioned to the lower chuck 231. In this case, the entire bonding surface W2j of the lower wafer W2 is pressed by atmospheric pressure, while only a portion of the non-bonding surface W2n that contacts the opening 273 is pressed by atmospheric pressure.

[0114] That is, in this reference example, only the portion of the non-bonding surface W2n that contacts the opening 273 is locally pressed, so that the portion in contact with the opening 273 is significantly deformed toward the bonding surface W2j (upward) as shown in FIG. 11(b).

[0115] Therefore, in the reference example, due to the large deformation of the lower wafer W2, a large distortion occurs in the laminated substrate T in which the upper wafer W1 and the lower wafer W2 are bonded together.

[0116] FIG. 12 is a diagram showing a simulation model and a simulation result of the displacement of the lower wafer W2 attracted to the lower chuck 231 according to the embodiment.

[0117] 12(a), in the embodiment, the opening 273 (i.e., the space 272) is at a pressure lower than atmospheric pressure (negative pressure) when the lower wafer W2 is adsorbed to the lower chuck 231. In this case, the entire bonding surface W2j of the lower wafer W2 is pressed by atmospheric pressure, and the entire non-bonding surface W2n is in contact with the space under negative pressure.

[0118] That is, in the embodiment, the pressure is controlled to be balanced over the entire non-bonding surface W2n, so that the deformation of the lower wafer W2 can be reduced compared to the reference example, as shown in (b) of Fig. 12. Therefore, according to the embodiment, the distortion of the laminated substrate T can be reduced.

[0119] In the embodiment, the space 272 may be sucked by the suction pressure generating unit 280. This eliminates the need to separately provide a suction unit for sucking the space 272, thereby reducing the manufacturing cost of the bonding device 41.

[0120] In the embodiment, when the upper wafer W1 and the lower wafer W2 are bonded together, a lip seal 267 may be provided to close the gap between the housing 270 and the lift pins 265. This makes it possible to stably control the space 272 to a negative pressure, thereby stably reducing distortion of the laminated substrate T.

[0121] <Variation 1> Next, various modified examples of the embodiment will be described with reference to Figures 13 to 19. In the following various modified examples, the same components as those in the embodiment will be denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0122] Fig. 13 is an enlarged cross-sectional view showing a configuration of a lower chuck 231 according to Modification 1 of the embodiment. As shown in Fig. 13, Modification 1 differs from the embodiment in the position of the tip portion 265a of the lift pin 265 when the upper wafer W1 and the lower wafer W2 are bonded.

[0123] Specifically, in Modification 1, the tip 265a of the lift pin 265 is approximately flush with the tip portions of the multiple support pins 276 when the upper wafer W1 and the lower wafer W2 are bonded together. That is, in Modification 1, the tip 265a of the lift pin 265 is also approximately flush with the tip portions of the rib 275 when the upper wafer W1 and the lower wafer W2 are bonded together.

[0124] As a result, when the upper wafer W1 and the lower wafer W2 are bonded together, the lower wafer W2 can be supported even inside the rib 275. The effects of this configuration will be described below. Fig. 14 is a diagram showing a simulation model and a simulation result of the displacement of the lower wafer W2 attracted to the lower chuck 231 according to the first modification of the embodiment.

[0125] As shown in (a) of Figure 14, in variant example 1, when the lower wafer W2 is adsorbed to the lower chuck 231, the opening 273 (i.e., the space 272) is at negative pressure, and the lower wafer W2 is supported by the tip 265a of the lift pin 265 at the center of the opening 273.

[0126] In this case, the lower wafer W2 can be supported by the tip portions 265a of the lift pins 265 inside the openings 273, which have a diameter larger than the distance between adjacent support pins 276. This can further reduce the deformation of the lower wafer W2, as shown in (b) of Fig. 14. Therefore, according to the first modification, the distortion of the laminated substrate T can be further reduced.

[0127] <Variation 2> Fig. 15 is an enlarged cross-sectional view showing a configuration of a lower chuck 231 according to Modification 2 of the embodiment. As shown in Fig. 15, Modification 2 differs from the embodiment in that a suction part 290 that suctions the space 272 is separately provided.

[0128] The suction unit 290 has a flow path 291, a valve 292, and a suction mechanism 293. The flow path 291 is connected between the space 272 of the housing 270 and the suction mechanism 293. The suction mechanism 293 is, for example, a pump, and suctions the space 272 via the valve 292.

[0129] The control unit 5 can control the pressure in the space 272 to be lower than atmospheric pressure by operating the valve 292 and the suction mechanism 293. This allows the space 272 to be stably controlled to a negative pressure, and therefore distortion of the laminated substrate T can be stably reduced.

[0130] In addition, in the second modification, the suction unit 290 may suck the space 272 so that the pressure in the space 272 becomes higher than the suction pressure of the suction surface 271. This makes it possible to suppress deformation of the lower wafer W2 toward the non-bonding surface W2n inside the opening 273, the diameter of which is larger than the distance between the adjacent support pins 276.

[0131] Therefore, according to the second modification, the distortion of the laminated substrate T can be further reduced.

[0132] <Variation 3> Fig. 16 is an enlarged cross-sectional view showing the configuration of the lower chuck 231 according to the third modification of the embodiment, and Fig. 17 is an enlarged top view showing the configuration of the suction surface 271 of the lower chuck 231 according to the third modification of the embodiment. As shown in Figs. 16 and 17, in the third modification, the configuration of the suction surface 271 is different from that of the embodiment.

[0133] Specifically, in the third modification, the rib 275 is not provided around the entire periphery of the opening 273 on the adsorption surface 271, but a plurality of support pins 276 are provided along the periphery of the opening 273.

[0134] In this way, by supporting the vicinity of the opening 273 on the lower wafer W2 with a plurality of point-like support pins 276 rather than with a linear rib 275, deformation of the lower wafer W2 due to differences in the support state with other portions of the adsorption surface 271 can be suppressed.

[0135] Therefore, according to the third modification, the distortion of the laminated substrate T can be further reduced.

[0136] In addition, in the third modification, it is preferable that the tip portions 265a of the lift pins 265 are substantially flush with the tip portions of the ribs 275 when the upper wafer W1 and the lower wafer W2 are bonded together. This allows the tip portions 265a of the lift pins 265 to support the lower wafer W2 inside the openings 273, the diameter of which is larger than the distance between the adjacent support pins 276.

[0137] Therefore, according to the third modification, the deformation of the lower wafer W2 can be further reduced, and therefore the distortion of the laminated substrate T can be further reduced.

[0138] 16 shows an example in which the flow path 281 is also connected to the space 272, but the flow path 281 does not have to be connected to the space 272. Even in this case, the suction pressure generating unit 280 can control the space 272 to a negative pressure via the suction surface 271.

[0139] <Variation 4> 18 is an enlarged cross-sectional view showing the configuration of the lower chuck 231 according to the embodiment modification 4. In the above embodiment, the example in which the lip seal 267 is used as the sealing member that seals the gap between the housing 270 and the lift pin 265 is shown, but the sealing member of the present disclosure is not limited to the lip seal.

[0140] 18, an O-ring seal 268 may be used as a sealing member for sealing the gap between the housing 270 and the lift pin 265. This also makes it possible to stably control the space 272 to a negative pressure, thereby making it possible to stably reduce distortion of the laminated substrate T.

[0141] <Variation 5> 19 is an enlarged cross-sectional view showing the configuration of the lower chuck 231 according to the fifth modified example of the embodiment. In the above embodiment, the example in which the gap between the housing 270 and the lift pin 265 is blocked with a sealing member to stably control the space 272 to a negative pressure is shown, but the present disclosure is not limited to such an example.

[0142] 19 , for example, a bellows 269 may be provided in the lower chuck 231. The bellows 269 is disposed between a housing 270 and a driving unit 266, and the inside of the bellows 269 is connected to a space 272. The bellows 269 also houses a lower portion of the lift pin 265.

[0143] This also makes it possible to stably control the space 272 to a negative pressure when the lift pins 265 are raised and lowered by the driving unit 266. Therefore, according to the fifth modification, the distortion of the laminated substrate T can be stably reduced.

[0144] Furthermore, according to the fifth modification, the amount of particles generated when the lift pins 265 are raised and lowered can be reduced, so that the bonding quality of the laminated substrate T can be improved.

[0145] The bonding apparatus 41 according to the embodiment includes a first holding unit (upper chuck 230), a second holding unit (lower chuck 231), a suction pressure generating unit 280, and lift pins 265. The first holding unit (upper chuck 230) holds a first substrate (upper wafer W1). The second holding unit (lower chuck 231) is provided at a position facing the first holding unit (upper chuck 230) and has an adsorption surface 271 that adsorbs a second substrate (lower wafer W2) to be bonded to the first substrate (upper wafer W1). The adsorption pressure generating unit 280 generates an adsorption pressure on the adsorption surface 271. The lift pins 265 separate the second substrate (lower wafer W2) on the adsorption surface 271 from the second holding unit (lower chuck 231). Further, the second holding part (lower chuck 231) is provided with a space 272 including an opening 273 through which the lift pins 265 pass, and the pressure in the space 272 is controlled to be lower than atmospheric pressure. This makes it possible to reduce distortion of the laminated substrate T.

[0146] Moreover, in the bonding device 41 according to the embodiment, the space 272 is suctioned by the suction pressure generating unit 280. This allows the manufacturing cost of the bonding device 41 to be reduced.

[0147] Moreover, the bonding apparatus 41 according to the embodiment further includes a suction unit 290 that suctions the space 272 to a pressure lower than atmospheric pressure. This makes it possible to stably reduce distortion of the laminated substrate T.

[0148] Moreover, in the bonding apparatus 41 according to the embodiment, the suction section 290 suctions the space 272 so that the pressure in the space 272 is higher than the suction pressure. This makes it possible to further reduce the distortion of the laminated substrate T.

[0149] Moreover, in the bonding apparatus 41 according to the embodiment, the second holding unit (lower chuck 231) has a housing 270 and sealing members (lip seal 267, O-ring seal 268). The housing 270 forms a space 272. The sealing members (lip seal 267, O-ring seal 268) close the gap between the housing 270 and the lift pins 265 when the first substrate (upper wafer W1) and the second substrate (lower wafer W2) are bonded together. This makes it possible to stably reduce distortion of the laminated substrate T.

[0150] Moreover, in the bonding apparatus 41 according to the embodiment, the second holding unit (lower chuck 231) has a housing 270, a driving unit 266, and a bellows 269. The housing 270 forms a space 272. The driving unit 266 drives the lift pins 265. The bellows 269 is disposed between the housing 270 and the driving unit 266, and the inside of the bellows 269 is connected to the space 272. This makes it possible to stably reduce distortion of the laminated substrate T.

[0151] Moreover, in the bonding apparatus 41 according to the embodiment, the suction surface 271 has a plurality of support pins 276 that support the second substrate (lower wafer W2). Furthermore, the tip portions 265a of the lift pins 265 are substantially flush with the tip portions of the plurality of support pins 276 when the first substrate (upper wafer W1) and the second substrate (lower wafer W2) are bonded together. This can further reduce distortion of the laminated substrate T.

[0152] Moreover, in the bonding apparatus 41 according to the embodiment, the suction surface 271 has a plurality of support pins 276 that support the second substrate (lower wafer W2). Moreover, the support pins 276 are arranged along the periphery of the opening 273. This can further reduce distortion of the laminated substrate T.

[0153] Moreover, the bonding method according to the embodiment includes a step of holding a first substrate (upper wafer W1), a step of holding a second substrate (lower wafer W2), and a bonding step. In the step of holding the first substrate (upper wafer W1), the first holding part (upper chuck 230) holds the first substrate (upper wafer W1). In the step of holding the second substrate (lower wafer W2), a suction pressure is generated on an adsorption surface 271 of a second holding part (lower chuck 231) provided at a position opposite to the first holding part (upper chuck 230) to hold the second substrate (lower wafer W2). In the bonding step, the first substrate (upper wafer W1) and the second substrate (lower wafer W2) are bonded together. In the bonding step, a space 272 including an opening 273 through which a lift pin 265 passes, the lift pin 265 being provided in the second holding part (lower chuck 231) and separating the second substrate (lower wafer W2) on the adsorption surface 271 from the second holding part, is controlled to a pressure lower than atmospheric pressure. This makes it possible to reduce distortion of the laminated substrate T.

[0154] Although the embodiment of the present disclosure has been described above, the present disclosure is not limited to the above embodiment, and various modifications are possible without departing from the spirit of the present disclosure. For example, in the above embodiment, an example is shown in which the space 272 through which the lift pin 265 provided in the lower chuck 231 is inserted is controlled to a negative pressure, but the present disclosure is not limited to such an example.

[0155] For example, in the present disclosure, a space including an opening provided in the upper chuck 230 through which a lift pin is inserted may be controlled to a negative pressure. This can reduce deformation of the upper wafer W1, thereby reducing distortion of the laminated substrate T.

[0156] The disclosed embodiments should be considered to be illustrative and not restrictive in all respects. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0157] 1 Joining System 5. Control section 41 Joining equipment 230 Upper chuck (an example of the first holding part) 231 Lower chuck (an example of the second holding part) 265 Lift Pin 266 Drive Unit 267 Lip seal (an example of a sealing material) 268 O-ring seal (an example of a sealing material) 269 ​​Bellows 270 Case 271 Adsorption surface 272 Space 273 Aperture 275 Ribs 276 Support pin 280 Adsorption pressure generating unit 290 Suction part W1 Upper wafer (an example of the first substrate) W2 Lower wafer (an example of the second substrate)

Claims

1. A first holding portion that holds a first substrate; a second holding portion provided at a position opposite to the first holding portion and having an adsorption surface for adsorbing a second substrate to be joined to the first substrate; an adsorption pressure generating unit that generates an adsorption pressure on the adsorption surface; a lift pin that separates the second substrate on the suction surface from the second holding part; Equipped with The second holding portion is provided with a space including an opening through which the lift pin passes, The space is controlled to a pressure lower than atmospheric pressure. Bonding equipment.

2. The space is sucked by the suction pressure generating unit. The joining device according to claim 1 .

3. a suction unit that suctions the space to a pressure lower than atmospheric pressure; Further equipped The joining device according to claim 1 .

4. The suction unit suctions the space so that the pressure in the space is higher than the suction pressure. The joining device according to claim 3 .

5. The second holding portion is A housing that forms the space; a seal member that closes a gap between the housing and the lift pin when the first substrate and the second substrate are joined; have The joining device according to any one of claims 1 to 4.

6. The second holding portion is A housing that forms the space; A drive unit that drives the lift pins; a bellows disposed between the housing and the driving unit, the interior of the bellows being connected to the space; have The joining device according to any one of claims 1 to 4.

7. the adsorption surface has a plurality of support pins for supporting the second substrate, A tip of the lift pin is substantially flush with tips of the support pins when the first substrate and the second substrate are joined. The joining device according to any one of claims 1 to 6.

8. the adsorption surface has a plurality of support pins for supporting the second substrate, The support pins are disposed along the periphery of the opening. The joining device according to any one of claims 1 to 7.

9. holding a first substrate with a first holding portion; a step of generating a suction pressure on a suction surface of a second holding part provided at a position opposite to the first holding part to hold a second substrate; bonding the first substrate and the second substrate; Including, In the bonding step, a space including an opening provided in the second holding part and through which a lift pin passes to separate the second substrate on the suction surface from the second holding part is controlled to a pressure lower than atmospheric pressure. Joining method.

Images