Using an Adaptive Displacement Map for Local Cell Replacement in Digital Lithography

Abstract

The embodiments described herein relate to a system, software, and method of using the system for editing a design to be printed by a lithography system. The system and method utilize a server of a maskless lithography apparatus. The server includes a memory. The memory includes a virtual mask file. The virtual mask file includes cells, the cells including sub-cells that form one or more polygons. The server further includes a controller coupled to the memory. The controller is configured to receive a substitution table. The substitution table includes instructions for substituting cells in the virtual mask file. The controller is further configured to replace the cells with substitution cells according to the substitution table to create an edited virtual mask file.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to lithography systems and, more particularly, to systems, software, and methods of using the systems for editing a design to be printed by a lithography system. [Background technology]

[0002] Photolithography is widely used in the manufacture of semiconductor devices and display devices such as liquid crystal displays (LCDs). Large area substrates are often utilized in the manufacture of LCDs. LCDs, or flat panels, are typically used in active matrix displays such as computers, touch panel devices, personal digital assistants (PDAs), mobile phones, and television monitors. In general, flat panels may include a layer of liquid crystal material forming pixels disposed between two plates. When power from a power source is applied to the liquid crystal material, the amount of light passing through the liquid crystal material at the location of the pixels can be controlled to allow an image to be generated.

[0003] Typically, lithography techniques are employed to create the electrical features incorporated as part of the liquid crystal material layer that forms the pixels. Maskless lithography techniques involve creating a virtual mask and removing selected portions of the film from the film to create a pattern in the film on the substrate. Maskless lithography techniques include electron beam lithography, optical lithography, direct laser writing, focused ion beam lithography, and probe tip contact lithography.

[0004] One problem in the art is that maskless lithography techniques can cause defects in the patterns created. The substrate can have warpage, die shift, or other defects that affect subsequent layers to be patterned on the substrate. Additionally, an underlying layer can contain defects that affect the layer to be patterned on the underlying layer. Such defects must be taken into account when manufacturing the pattern on the substrate.

[0005] Therefore, what is needed is a system, software, and method of using the system for editing a design to be printed by a lithography system. Summary of the Invention

[0006] In one embodiment, a server for use in performing digital lithography is provided. The server includes a memory. The memory includes a virtual mask file. The virtual mask file includes cells. The cells include sub-cells that form one or more polygons. The server further includes a controller coupled to the memory. The controller is configured to receive a substitution table. The substitution table includes instructions for substituting cells of the virtual mask file. The controller is further configured to substitute the cells with substitution cells according to the substitution table to create an edited virtual mask file. The server is operable to be used in performing digital lithography on a substrate based on the edited virtual mask file.

[0007] In another embodiment, a method is provided. The method includes loading a virtual mask file into a memory of a server of a maskless lithography apparatus. The virtual mask file includes cells. The cells include sub-cells that form one or more polygons. The method further includes sending a substitution table to the server. The substitution table includes instructions for substituting cells of the virtual mask file. The method further includes substituting the cells with substitution cells according to the substitution table to create an edited virtual mask file. The edited virtual mask file is created at the server of the maskless lithography apparatus.

[0008] In yet another embodiment, a non-transitory computer readable medium is provided. The non-transitory computer readable medium stores instructions that, when executed by a processor, cause a computer system to perform steps. The steps include loading a virtual mask file into a memory of a server of the maskless lithography apparatus. The virtual mask file includes cells. The cells include sub-cells that form one or more polygons. The steps further include transmitting a substitution table to the server. The substitution table includes instructions to substitute cells of the virtual mask file. The steps further include substituting the cells with substitution cells according to the substitution table to create an edited virtual mask file. The edited virtual mask file is created at the server of the maskless lithography apparatus.

[0009] So that the above-listed features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly outlined above can be made with reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings merely illustrate exemplary embodiments and therefore should not be considered as limiting the scope of the present disclosure, as other equally effective embodiments may be recognized. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic diagram of a lithographic environment according to an embodiment. [Diagram 2] 1 is a perspective view of a maskless lithographic apparatus according to an embodiment; [Diagram 3] 4A-4C are schematic top-view diagrams of mask patterns of a virtual mask file according to an embodiment. [Figure 4A] FIG. 2 is a schematic top view of a cell according to an embodiment. [Figure 4B] FIG. 2 is a schematic top view of a replacement cell according to an embodiment. [Figure 4C] FIG. 2 is a schematic top view of a replacement cell according to an embodiment. [Figure 4D] 1 is a schematic top view of a replacement cell according to an embodiment. [Diagram 5] FIG. 2 is a flow diagram of a method for editing a virtual mask file according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] For ease of understanding, the same reference numbers have been used, where possible, to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0012] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to lithography systems. More particularly, embodiments of the present disclosure relate to a system for editing a design to be printed by a lithography system, and a method of using the system. The method includes loading a virtual mask file into a memory of a server of a maskless lithography device. The virtual mask file includes cells. The cells include sub-cells that form one or more polygons. The method further includes transmitting a substitution table to the server. The substitution table includes instructions for substituting cells of the virtual mask file. The method further includes substituting the cells with substitution cells according to the substitution table to create an edited virtual mask file. The edited virtual mask file is created at the server of the maskless lithography device.

[0013] 1 is a schematic diagram of a lithography environment 100 according to one embodiment. As shown, the lithography environment 100 includes, but is not limited to, a virtual mask apparatus 102, a metrology tool 104, a maskless lithography apparatus 106, a conversion server 108, a computer integrated manufacturing (CIM) system 110, and a communication link 101. Each of the lithography environment apparatuses is operable to be connected to one another via the communication link 101. Each of the lithography environment apparatuses is operable to be connected to the CIM system 110 by the communication link 101. The lithography environment 100 can be located in the same area or production facility, or each of the lithography environment apparatuses can be located in different areas.

[0014] Each of the plurality of lithography environment apparatuses is further indexed in the operations of the method 500 described herein. Each of the virtual mask apparatus 102, the metrology tool 104, the maskless lithography apparatus 106, the conversion server 108, and the CIM system 110 includes an on-board processor and memory, the memory configured to store instructions corresponding to any portion of the method 500 described below. The communication link 101 may include at least one of a wired connection, a wireless connection, a satellite connection, and the like. The communication link 101 may include sending and receiving files for storing data according to embodiments described further herein. The communication link 101 may include temporarily or permanently storing the file or data in a cloud before transferring or copying the file or data to the lithography environment apparatus.

[0015] In one embodiment that can be combined with other embodiments described herein, the maskless lithography apparatus 106 and the metrology tool 104 are connected by a transport system. The transport system is operable to transport substrates between the maskless lithography apparatus 106 and the metrology tool 104. In one embodiment that can be combined with other embodiments described herein, the transport system can include a robot or other equipment operable to transport the patterned substrate and connectable to the CIM system 110. In one embodiment that can be combined with other embodiments described herein, the transport system is physically operable by a user.

[0016] The CIM system 110 includes a central processing unit (CPU) 112, support circuits 114, and memory 116. The CPU 112 can be one of any type of computer processor that can be used in an industrial environment to control a lithography environment device. The memory 116 is coupled to the CPU 112. The memory 116 can be one or more readily available memories such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. The support circuits 114 are coupled to the CPU 112 to support the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input / output circuits, subsystems, and the like. The CIM system 110 can include the CPU 112 coupled to the support circuits 114 and input / output (I / O) devices found in the memory 116. The CIM system 110 is operable to receive a virtual mask file and transfer the virtual mask file to the maskless lithography device 106 via the communication link 101. The CIM system 110 is operable to receive the substitution table from the transformation server 108 and to transfer the substitution table to the maskless lithography device 106 via the communication link 101 .

[0017] The memory 116 may include one or more software applications, such as control software programs. The memory 116 may also include stored media data used by the CPU 112 to execute the method 500 described herein. The CPU 112 may be a hardware unit or combination of hardware units capable of executing software applications and processing data. In some configurations, the CPU 112 includes a central processing unit (CPU), a digital signal processor (DSP), an application specific integrated circuit (ASIC), and / or a combination of such units. The CPU 112 is generally configured to execute one or more software applications and process stored media data, each of which may be included in the memory 116. The CIM system 110 controls the transfer of data and files to and from various lithography environment devices. The memory 116 is configured to store instructions corresponding to any operation of the method 500 according to the embodiments described herein.

[0018] The virtual mask device 102 is operable to receive a design file. The design file determines which tasks are to be performed on the substrate. The design file (or computer instructions), sometimes referred to as an imaging design file or a graphic design system (GDS) file, is converted by the virtual mask device 102 into a virtual mask file. The virtual mask file is a digital representation of the design to be printed by the maskless lithography device 106. The virtual mask file includes a mask pattern 300 (shown in FIG. 3). The virtual mask file is sent by the CIM system 110 to the maskless lithography device 106 via the communication link 101. The virtual mask file is stored in the maskless lithography device 106. In one embodiment, which can be combined with other embodiments described herein, the virtual mask file is sent directly to the maskless lithography device 106. In another embodiment, which can be combined with other embodiments described herein, the virtual mask file includes a layered file. For example, the virtual mask file can include multiple layers of the design corresponding to multiple layers to be patterned in the photoresist.

[0019] The metrology tool 104 is operable to detect defects in the substrate. Defects on the substrate result in suboptimal printing. The substrate may include defects such as warpage or die shift. Additionally, the underlying layer may include defects that affect the layer to be patterned on the underlying layer. The layer to be patterned on the substrate or the underlying layer must account for these defects. The virtual mask file of the layer to be patterned can be edited in the maskless lithography apparatus 106 to account for the defects. The defects may be caused by a shift in the underlying layer, resulting in a lower yield of the patterned substrate. In one embodiment, which may be combined with other embodiments described herein, the metrology tool 104 may detect a warpage in the substrate. In another embodiment, which may be combined with other embodiments described herein, the metrology tool 104 may detect a die shift in the substrate. The metrology tool 104 is operable to detect defects in each layer patterned on the substrate. The metrology tool 104 is further operable to detect defects in the unpatterned substrate.

[0020] The metrology tool 104 communicates with the conversion server 108 via the communication link 101. After detecting defects, the metrology tool 104 sends a defect list to the conversion server 108. The defect list includes the locations of the defects on the substrate. In one embodiment, which may be combined with other embodiments described herein, the conversion server 108 may execute a conversion script that converts the defect list into a substitution table. The conversion script creates the substitution table that includes desired edits to the virtual mask based on the defects detected on the substrate.

[0021] 2 is a perspective view of a maskless lithography apparatus 106, such as a digital lithography system, that may benefit from embodiments described herein. The maskless lithography apparatus 106 includes a stage 214 and a processing unit 204. The stage 214 is supported by a pair of tracks 216. A substrate 220 is supported by the stage 214. The stage 214 is operable to move along the pair of tracks 216. An encoder 218 is coupled to the stage 214 to provide information of the position of the stage 214 to the lithography server 210. The lithography server 210 includes, but is not limited to, a controller 222, a rasterizer 224, a memory 226, and a GPU 228.

[0022] The controller 222 is generally designed to facilitate control and automation of the processing techniques described herein. The controller 222 may be coupled to or in communication with the processing units 204, the stage 214, and the encoder 218. The processing units 204 and the encoder 218 may provide information to the controller 222 regarding substrate processing and substrate alignment. For example, the processing units 204 may provide information to the controller 222 informing the controller 222 that substrate processing is complete. The controller 222 facilitates control and automation of the maskless lithography process based on a virtual mask file provided to the lithography server 210. The virtual mask file is created by the virtual mask device 102. The virtual mask file is provided to the lithography server 210 from the CIM system 110 via the communication link 101. The design file includes mask pattern data.

[0023] The controller 222 retrieves and executes programming data stored in the memory 226 and coordinates the operation of other system components. Similarly, the controller 222 stores application data in the memory 226 and retrieves application data present in the memory 226. The controller 222 may be one or more central processing units (CPUs). Alternatively or in addition, the controller 222 may be one or more application-specific software programs.

[0024] The memory 226 may store instructions and logic executed by the controller 222. Furthermore, the memory 226 may be one or more of a random access memory (RAM) and a non-volatile memory (NVM). The NVM may be a hard disk, a network attached storage (NAS), and a removable storage device, among others.

[0025] The substrate 220 includes any suitable material used as part of a flat panel display, such as glass. In other embodiments that can be combined with other embodiments described herein, the substrate 220 is made of other materials that can be used as part of a flat panel display. Additionally, the substrate 220 can be a wafer used for advanced packaging (AP) or similar applications in semiconductor manufacturing. The substrate 220 has a film layer to be patterned formed thereon, such as by pattern etching, and a photoresist formed on the film layer to be patterned that is sensitive to electromagnetic radiation, such as UV or deep UV "light."

[0026] A positive photoresist includes a portion of the photoresist that, after a pattern is written into the photoresist using electromagnetic radiation, becomes soluble in a photoresist developer applied to the photoresist when exposed to radiation. A negative photoresist includes a portion of the photoresist that, after a pattern is written into the photoresist using electromagnetic radiation, becomes insoluble in a photoresist developer applied to the photoresist when exposed to radiation. The chemical composition of the photoresist determines whether the photoresist is a positive or negative photoresist. Examples of photoresists include, but are not limited to, at least one of diazonaphthoquinone, phenol formaldehyde resin, poly(methyl methacrylate), poly(methyl glutarimide), and SU-8. After the photoresist is exposed to electromagnetic radiation, the resist is developed to leave a patterned photoresist on the underlying film layer. The patterned photoresist is then used to pattern etch an underlying thin film through the openings in the photoresist to form a portion of the electronic circuitry of a display panel or advanced packaging wafer.

[0027] The processing unit 204 is supported by supports 208 such that the processing unit 204 straddles a pair of tracks 216. The supports 208 provide an opening 212 for the pair of tracks 216 and the stage 214 to pass underneath the processing unit 204. The processing unit 204 is a pattern generator configured to receive a virtual mask file from the lithography server 210 and expose photoresist in a maskless lithography process using one or more image projection systems 206 operable to project a writing beam of electromagnetic radiation onto the substrate 220. A pattern generated by the processing unit 204 is projected by the image projection system 206 to expose the photoresist of the substrate 220 against a mask pattern 300 that is written into the photoresist.

[0028] In one embodiment, which can be combined with other embodiments described herein, each image projection system 206 includes a spatial light modulator that modulates incident light to create a desired image. Each spatial light modulator includes a number of electrically addressable elements that can be individually controlled. Each electrically addressable element can be in an "on" or "off" position based on the virtual mask file and the edited virtual mask file created through the method 500 described herein. When light reaches the spatial light modulator, the electrically addressable elements in the "on" position project a number of writing beams to a projection lens (not shown). The projection lens then projects the writing beams to the substrate 220. The electrically addressable elements include, but are not limited to, digital micromirrors, liquid crystal displays (LCDs), liquid crystal over silicon (LCoS) devices, ferroelectric liquid crystal on silicon (FLCoS) devices, microshutters, micro LEDs, VCSELs, liquid crystal displays (LCDs), or any solid-state emitter of electromagnetic radiation.

[0029] The rasterizer 224 comprises, in some embodiments, one or more rasterizer computation engines and, in embodiments, one or more spatial light modulator (SLM) arrays. In alternative embodiments, the SLM array may comprise one or more digital micromirror (DMD) devices, micro LEDs, VCSELs, and / or LCD arrays, or other types of spatial light modulators. The rasterizer 224 may include a rasterizer computation engine that includes one or more field programmable gate arrays (FPGAs), graphic processing units (GPUs), a combination of FPGAs and GPUs, or other processing hardware / firmware that can convert data in an image format into a format understandable by the DMD.

[0030] The virtual mask file is stored in the lithography server 210 of the maskless lithography apparatus 106. The virtual mask file includes a mask pattern 300 that includes a design to be patterned on a substrate (e.g., substrate 220). The virtual mask file includes a cell 304 (shown in FIG. 3) of the mask pattern 300. The cell 304 includes a plurality of sub-cells 402 (shown in FIG. 4A). The plurality of sub-cells 402 form a polygon 404 (shown in FIG. 4A). In one embodiment that can be combined with other embodiments described herein, the plurality of sub-cells 402 form one or more polygons 404. In another embodiment that can be combined with other embodiments described herein, the cell 304 can be repeated. For example, the mask pattern 300 formed by the cell 304 can include a number of the same cell 304 that repeat to form the mask pattern 300. The virtual mask file can be edited according to a substitution table. A substitution cell 406 (shown in FIGS. 4B-4D) can replace the cell 304 of FIGS. 3 and 4A according to a substitution table.

[0031] The virtual mask file is stored in a lithography server 210 of the maskless lithography apparatus 106. In one embodiment, which may be combined with other embodiments described herein, the virtual mask file is stored on a disk in the lithography server 210. The lithography server 210 may be coupled to the maskless lithography apparatus 106. Before a lot of substrates (e.g., a lot of substrates 220) is patterned in the maskless lithography apparatus 106, the virtual mask file is loaded into memory 226. The maskless lithography apparatus 106 patterns the substrates according to the virtual mask file stored in memory 226.

[0032] A lot of substrates includes a lot ID number. Each lot ID number corresponds to a virtual mask file. Multiple virtual mask designs are stored in the maskless lithography tool 106, each corresponding to a unique lot ID number. Thus, the lot ID number corresponds to a design to be patterned on the lot of substrates. In one embodiment, which can be combined with other embodiments described herein, the lot ID number is readable by the CIM system 110. The CIM system 110 communicates to the maskless lithography tool 106 the lot ID associated with the lot of substrates to be patterned. The virtual mask file corresponding to the lot ID number is loaded into memory 226.

[0033] The substrate lot includes a plate ID number. The plate ID number is a number that is unique to each lot of substrates. The plate ID number allows the substrate lot to be efficiently tracked and characterized. For example, when a defect is detected in a substrate lot by the metrology tool 104, the plate ID number corresponding to the substrate lot can be read by the CIM system 110. The CIM system communicates the plate ID number to the maskless lithography apparatus 106 so that the substrate lot can be identified.

[0034] The substitution table generated by the transformation server 108 is transferred by the CIM system 110. The CIM system 110 identifies the plate ID number associated with the substitution table and matches the substitution table to a lot of substrates having the plate ID number. The CIM system 110 communicates with the lithography server 210 of the maskless lithography apparatus 106 and transfers the substitution table to the lithography server 210. The substitution table includes instructions for editing the virtual mask file loaded into the memory 226. The cells 304 (shown in FIG. 3) can be edited by replacing the cells 304 with replacement cells 406 (shown in FIGS. 4B-4D). The substitution table provides instructions for editing the polygons 404 of the cells 304 with the replacement cells 406. The replacement cells 406 replace a desired number of the cells 304 to create an edited virtual mask file. The edited virtual mask file is transferred to the processing unit 204. The processing unit 204 reads the edited virtual mask file and instructs the image projection system 206 to pattern the edited design onto the substrate 220 .

[0035] By utilizing a substitution table to edit the mask pattern 300, the virtual mask file can be edited at the lithography server 210. Editing the virtual mask file at the lithography server 210 allows the original version of the virtual mask file to remain unchanged. Furthermore, the edits to the virtual mask file are applied near the end of the method 500 with minimal impact to the manufacturing run time.

[0036] 3 is a schematic top view of a mask pattern 300 of a virtual mask file, according to one embodiment. The virtual mask file includes a mask pattern 300. The mask pattern 300 can be organized in a hierarchy that can be referenced to create an array 302. The array 302 includes cells 304. In one embodiment that can be combined with other embodiments described herein, one of the cells 304 includes, but is not limited to, a pixel cell, a bezel cell, a contact cell, an indium tin oxide (ITO) cell, or a display cell. The cell 304 can be any combination of a pixel cell, a bezel cell, a contact cell, an indium tin oxide (ITO) cell, or a display cell. In another embodiment that can be combined with other embodiments described herein, the cell 304 is a pixel cell. The pixel cell includes one or more subpixels. In yet another embodiment that can be combined with other embodiments described herein, the cells 304 are overlapping (shown as overlapping cell 304a). In another embodiment, which can be combined with other embodiments described herein, the cells 304 are non-overlapping (shown as adjacent cells 304b).

[0037] In one embodiment, which can be combined with other embodiments described herein, the cells 304 form a circuit. The circuit can include, but is not limited to, a cellular circuit, a wire cellular circuit, an antenna, a contact pad, a driver circuit, and a trace. In another embodiment, which can be combined with other embodiments described herein, the cells 304 include multiple layers to be patterned. Each layer can represent a different processing step in a lithography process. Additionally, the cells 304 may span one or more layers in the design of the mask pattern 300.

[0038] 1 and 2, the mask pattern 300 contained in a virtual design file is stored in the lithography server 210. When the CIM system 110 reads the lot ID number of the lot of substrate corresponding to the virtual design file, the virtual design file containing the mask pattern 300 is loaded into the memory 226 of the lithography server 210. Each cell 304 of the mask pattern 300 can be edited by a substitution table provided to the lithography server 210.

[0039] FIG. 4A is a schematic top view of a cell 304. The cell 304 includes multiple subcells 402. In one embodiment, which can be combined with other embodiments described herein, the cell 304 is a pixel cell, a bezel cell, a contact cell, an ITO cell, or a display cell. Each subcell 402 of the multiple subcells 402 can be an active subcell 402a or an inactive subcell 402b. FIG. 4A shows a cell 304 in which the multiple subcells 402 form a polygon 404. In one embodiment, which can be combined with other embodiments described herein, the polygon 404 can span one or more layers of the cell 304. The polygon 404 to be patterned on the substrate 220 can be edited by a substitution table. For example, if a defect is detected by the metrology tool 104 on the substrate 220, the mask pattern 300 can be edited to account for the defect by inserting a substitution cell 406.

[0040] 4B-4D are schematic top views of a replacement cell 406. The replacement cell 406 shown in FIGS. 4C-4D can replace the cell 304. For example, the cell 304 to be patterned on the substrate 220 at a given location can be edited by a replacement table, such as by replacing the cell 304 with one of the replacement cells 406. The replacement cell 406 includes a plurality of sub-cells 402. Each sub-cell 402 of the plurality of sub-cells 402 can be an active sub-cell 402a or an inactive sub-cell 402b. The plurality of sub-cells 402 can be patterned to edit a polygon 404 as desired. Once the cell 304 is replaced with the replacement cell 406, an edited virtual mask file is created that includes the replacement cell 406.

[0041] Editing of cells 304 of mask pattern 300 is performed locally at lithography server 210. In one embodiment, which can be combined with other embodiments described herein, cells 304 of mask pattern 300 having polygons 404 can be replaced by replacement cells 406. Replacement cells 406 edit polygons 404 as desired.

[0042] Figure 4B shows a permutation cell 406 having multiple subcells 402 forming a polygon 404. The polygon 404 of Figure 4A is edited according to a permutation table to form the polygon of Figure 4B. In one embodiment, which can be combined with other embodiments described herein, the inactive subcells 402b can be patterned to be active subcells 402a. Thus, the polygon 404 can be edited by activating the desired subcells 402.

[0043] FIG. 4C shows a replacement cell 406 having multiple subcells 402. The polygon 404 of FIG. 4A is edited according to a replacement table to remove the polygon 404. In one embodiment, which can be combined with other embodiments described herein, the active subcell 402a can be patterned to be an inactive subcell 402b. For example, as shown in FIG. 4C, the polygon 404 is removed by adding the inactive subcell 402b to the replacement cell 406.

[0044] FIG. 4D illustrates a permutation cell 406 having multiple subcells 402 that form a polygon 404. The polygon 404 of FIG. 4A is edited according to a permutation table to form the polygon 404 of FIG. 4D. In one embodiment that can be combined with other embodiments described herein, the active subcell 402a can be shifted. In one embodiment that can be included in other embodiments described herein, the permutation cell 406 includes a polygon 404 that is shifted in the x-direction relative to the cell 304, as shown in FIG. 4D. In another embodiment that can be combined with other embodiments described herein, the permutation cell 406 is edited to shift the polygon 404 in the y-direction relative to the cell 304. In yet another embodiment that can be combined with other embodiments described herein, the permutation cell 406 is edited to shift the polygon 404 in both the x-direction and the y-direction relative to the cell 304.

[0045] In one embodiment, which can be combined with other embodiments described herein, the mask pattern 300 can be adjusted to account for substrate lot variations such as substrate rotation, substrate expansion, substrate shrinkage, and other geometric shifts.

[0046] 5 is a flow diagram of a method 500 for editing a virtual mask file. In operation 501, a design file is converted into a virtual mask file. The design file is converted into a virtual mask file in virtual mask tool 102. The virtual mask file is stored in maskless lithography tool 106. For example, the virtual mask file is stored on disk in maskless lithography tool 106. There are multiple virtual mask files stored in maskless lithography tool 106, each corresponding to a different design file.

[0047] In operation 502, the virtual mask file is loaded into memory 226 of lithography server 210. In one embodiment, which may be combined with other embodiments described herein, CIM system 110 reads a lot ID number corresponding to a lot of substrates to be patterned. The lot ID number contains information about which virtual mask file of multiple virtual mask files is required for the patterning process. CIM system 110 communicates the lot ID number of the lot of substrates to be patterned to maskless lithography apparatus 106 so that the corresponding virtual mask file can be loaded into memory 226.

[0048] In operation 503, a substitution table is generated and sent to the lithography server 210. The metrology tool 104 detects defects of the substrate lot. A defect list is created and sent to the conversion server 108. The conversion server 108 converts the defect list into a substitution table. The substitution table is created to take into account the defects of the substrate lot and improve the quality of the substrate lot. The substitution table provides instructions to replace a cell 304 with a replacement cell 406. Each substitution table is matched with the plate ID number of the substrate lot. The CIM system 110 reads the plate ID number of the substrate lot. Thus, a substitution table corresponding to the substrate lot can be sent to the lithography server 210.

[0049] In operation 504, the virtual mask file is edited according to the substitution table. The mask pattern 300 including the polygon 404 is edited by replacing the cell 304 with a substitution cell 406. The substitution cell 406 activates, deactivates, shifts, or replaces the sub-cell 403 of the substitution cell 406 based on instructions from the substitution table. The substitution cell 406 can then replace the cell 304 of the mask pattern 300 to form an edited virtual mask file. An original version of the virtual mask file is stored in the maskless lithography device 106. In one embodiment, which can be combined with other embodiments described herein, the edited virtual mask file is sent to the rasterizer 224 in the lithography server 210 for rasterization.

[0050] Editing the virtual mask file in the lithography server 210 allows the cells 304 to be edited without modifying the original version of the virtual mask file. Editing the cells 304 occurs near the end of the process, so there is little impact on run time. Additionally, editing the virtual mask file results in higher quality patterning of the substrate, since the cells 304 can be edited to take into account defects detected in the substrate 220 or an underlying layer. The method 500 allows for efficient consideration of different defects for each substrate.

[0051] In operation 505, the edited virtual mask file is sent to the processing unit 204 of the maskless lithography tool 106. The processing unit 204 utilizes the edited virtual mask file to pattern a lot of substrates.

[0052] In summary, a system, software, and method of using the system are provided for editing a design to be printed by a lithography system. The system and method utilize a substitution table to edit a virtual mask file. The virtual mask file includes mask patterns of the design to be printed on a lot of substrates by a maskless lithography apparatus. The substitution table is provided from a metrology tool and server to a lithography server of a maskless exposure apparatus. The substitution table includes instructions to replace cells of the mask patterns of the virtual mask file. The substitution table takes into account defects on the lot of substrates detected by the metrology tool. The cells are replaced with substitution cells to create an edited virtual mask file. Creating an edited virtual mask device at the lithography server results in improved quality of the substrates. Additionally, editing the virtual mask file near the end of the method has a negligible impact on run time.

[0053] While the foregoing is directed to examples of the present disclosure, other and further examples of the disclosure may be devised without departing from the basic scope of the disclosure, the scope of which is determined by the following claims.

Claims

1. 1. A server for use in performing digital lithography, comprising: a memory containing a virtual mask file, the virtual mask file containing cells, the cells containing sub-cells forming one or more polygons; a controller coupled to the memory, receiving a substitution table containing instructions for substituting the cells of the virtual mask file; replacing the cells with replacement cells according to the replacement table to create an edited virtual mask file; A controller configured as follows: Equipped with at least one permutation cell activates, deactivates, shifts, or replaces at least one sub-cell of the permutation cell based on instructions from the permutation table; The server is operable to be used to perform digital lithography on a substrate based on the edited virtual mask file.

2. The server of claim 1 , wherein the edited virtual mask file includes at least one of a replacement cell.

3. The server of claim 1 , wherein the virtual mask file includes a mask pattern.

4. The server of claim 1 further comprising a rasterizer and a GPU.

5. The server of claim 1 , wherein the substitution table is formed from a defect list provided by a metrology tool coupled to the server.

6. 2. The server of claim 1, wherein the virtual mask file includes an array of the cells, the cells being any one or any combination of pixel cells, bezel cells, contact cells, indium tin oxide (ITO) cells, or display cells.

7. loading a virtual mask file into a memory of a server of a maskless lithography apparatus, the virtual mask file including cells, the cells including sub-cells that form one or more polygons; transmitting a substitution table to the server, the substitution table including instructions for substituting the cells of the virtual mask file; and replacing the cells with replacement cells according to the replacement table to create an edited virtual mask file; at least one permutation cell activates, deactivates, shifts, or replaces at least one sub-cell of the permutation cell based on instructions from the permutation table; The method, wherein the edited virtual mask file is created at the server of the maskless lithography apparatus.

8. The method of claim 7 , wherein the edited virtual mask file includes at least one of the replacement cells.

9. The method of claim 7 , wherein the virtual mask file comprises a mask pattern.

10. The method of claim 7 , wherein the server further comprises a rasterizer and a GPU.

11. The method of claim 7 , wherein the cells of the virtual mask file overlap.

12. 8. The method of claim 7, wherein the virtual mask file includes an array of the cells, the cells being any one or any combination of pixel cells, bezel cells, contact cells, indium tin oxide (ITO) cells, or display cells.

13. The method of claim 7 , further comprising transmitting the edited virtual mask file to a processing unit of the maskless lithography apparatus.

14. When executed by the processor, the computer system: loading a virtual mask file into a memory of a server of a maskless lithography apparatus, the virtual mask file including cells, the cells including sub-cells that form one or more polygons; sending a substitution table to the server, the substitution table including instructions for substituting the cells of the virtual mask file; replacing the cells with replacement cells according to the replacement table to create an edited virtual mask file; Run the command, at least one permutation cell activates, deactivates, shifts, or replaces at least one sub-cell of the permutation cell based on instructions from the permutation table; A non-transitory computer-readable medium storing instructions, wherein the edited virtual mask file is created at the server of the maskless lithography apparatus.

Images