Light-emitting device

Abstract

To suppress malfunctions.SOLUTION: A semiconductor device includes a field-effect transistor, a switch, and a capacitive element. The field-effect transistor has a first gate and a second gate that are superposed on each other via a channel formation region. A value of threshold voltage varies depending on potential of the second gate. The switch has a function of controlling whether or not one of a source and a drain of the field-effect transistor, and the second gate in the field-effect transistor are brought into a conduction state. The capacitive element has a function of holding voltage between the second gate in the field-effect transistor and the other of the source and the drain in the field-effect transistor.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] 1. Field of the Invention One embodiment of the present invention relates to a semiconductor device and a light-emitting device. Another embodiment of the present invention relates to an electronic device. [Background technology]

[0002] In recent years, the development of semiconductor devices using field effect transistors has progressed.

[0003] The semiconductor device may be, for example, a field effect transistor having a current between the source and drain. Examples of such semiconductor devices include those that control the amount of current flowing through them to perform desired operations (see, for example, Patent Document 1). ). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2008-083085 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, in conventional semiconductor devices, the threshold voltage of the field effect transistor varies. The effect of the gate capacitance on the gate electrode makes it difficult to control the amount of current flowing between the source and drain. If the amount of current flowing between the source and drain cannot be controlled, Otherwise, malfunctions may occur.

[0006] In one embodiment of the present invention, it is possible to suppress malfunction and to reduce the threshold voltage of a field effect transistor. One or more of the objectives is to reduce the effects of variation. [Means for solving the problem]

[0007] In one embodiment of the present invention, a first gate and a second gate overlap each other through a channel forming region. A field effect transistor having a gate is used. Furthermore, the potential of the second gate is controlled. By this, the threshold voltage of the field effect transistor is set. Figure 1 shows how the amount of current flowing between the source and drain of a field-effect transistor during operation. do.

[0008] One aspect of the present invention is a semiconductor device including a field effect transistor, a switch, and a capacitive element. It is a device.

[0009] The field effect transistor includes a first gate and a second gate which overlap each other via a channel forming region. and a second gate. The value of the threshold voltage in the field effect transistor is determined by the second gate. The field effect transistor may be normally on. For example, the field effect transistor may be a depletion mode transistor.

[0010] The switch is connected to one of the source and drain of the field effect transistor and The second gate of the transistor has a function of controlling whether or not the second gate of the transistor is in a conductive state.

[0011] The capacitance element is connected to the second gate of the field effect transistor and the The transistor has a function of maintaining a voltage between the other of the source and drain in the transistor. Effect of the Invention

[0012] According to one embodiment of the present invention, it is possible to suppress malfunction and to reduce the threshold voltage of a field effect transistor. The present invention can achieve one or more of the following effects: [Brief description of the drawings]

[0013] [Figure 1] 1A to 1C are diagrams illustrating examples of semiconductor devices. [Diagram 2] 1A to 1C are diagrams illustrating examples of light-emitting devices. [Diagram 3] 1A to 1C are diagrams illustrating examples of light-emitting devices. [Figure 4] 1A to 1C are diagrams illustrating examples of light-emitting devices. [Diagram 5] 1A to 1C are diagrams illustrating examples of light-emitting devices. [Figure 6] 1A to 1C are diagrams illustrating examples of light-emitting devices. [Figure 7] 1A to 1C are diagrams illustrating examples of light-emitting devices. [Figure 8] 1A to 1C are diagrams illustrating examples of field effect transistors. [Figure 9] 1A to 1C are diagrams illustrating an example of the structure of an active matrix substrate. [Figure 10] 1A to 1C are diagrams illustrating examples of a structure of a light-emitting device. [Figure 11] 1A to 1C are diagrams illustrating examples of electronic devices. [Figure 12] 1A to 1C are diagrams illustrating examples of electronic devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] An embodiment of the present invention will be described below. It would be easy for a person skilled in the art to modify the contents of the embodiment without departing from the scope thereof. Therefore, the present invention is not limited to the description of the embodiments shown below.

[0015] In addition, some or all of the contents of each embodiment (for example, the contents shown in the specification or drawings) may be used interchangeably. In addition, parts of the contents of each embodiment may be appropriately combined. It can be replaced.

[0016] In addition, ordinal numbers such as 1st and 2nd are used to avoid confusion between components. The number of is not limited to the number of ordinal numbers.

[0017] (Embodiment 1) In this embodiment, a semiconductor device including a field effect transistor having two gates is used as an example. This will be explained with reference to FIG.

[0018] The semiconductor device shown in FIG. 1A includes a field-effect transistor Tr, a switch Sw, and a capacitance element. and a child Cp.

[0019] The field effect transistor Tr has a first gate and a second gate. The first gate and the second gate of the transistor Tr are connected to each other through a channel forming region. The field effect transistor Tr has a threshold voltage of The value is controlled.

[0020] The field effect transistor Tr may be an enhancement type or a depletion type field effect transistor. As a result, a transistor can be used.

[0021] The switch Sw is connected to one of the source and drain of the field effect transistor Tr. A function of controlling whether or not the second gate of the effect transistor Tr is brought into a conductive state. has.

[0022] The capacitance element Cp is connected between the second gate of the field effect transistor Tr and the It has the function of maintaining the voltage between the other of the source and drain in the transistor.

[0023] Next, as an example of a method for driving the semiconductor device according to this embodiment, the semiconductor device shown in FIG. An example of a driving method will be described with reference to FIGS. As an example, the field effect transistor Tr is a depletion type N-channel transistor. The case where the stencil is used will be described.

[0024] In the example of the method for driving the semiconductor device shown in FIG. 1A, as shown in FIG. 1B-1, In this state, the switch Sw is turned on (also called the ON state). A potential V1 is applied to the first gate of the field effect transistor T A potential V2 is applied to the second gate of the field effect transistor Tr. A potential Vb is applied to the other of the source and drain. The value of V2 is the value of V1-Vb. Let it be greater than.

[0025] At this time, the second gate and drain of the field effect transistor Tr are in a conductive state. The potentials of the second gate and the drain of the field effect transistor Tr are V2. As a result, the threshold voltage (Vt h) shifts in the negative direction.

[0026] For example, if the threshold voltage of the original field effect transistor Tr is Vth0, then The threshold voltage of the field effect transistor Tr is Vth0-ΔVth. The value of th is determined according to the value of the potential V2. The value of the threshold voltage of the transistor Tr changes.

[0027] The voltage between the first gate and source of the field effect transistor Tr (also referred to as Vgs) At this time, the value of V1-Vb is the field effect transistor in the period T1. This is larger than the threshold voltage of the transistor Tr. Therefore, the field effect transistor Tr is in the ON state. become.

[0028] Next, in a period T2, the switch Sw is turned on. A potential V1 is supplied to the first gate of the field effect transistor Tr. The second gate is left floating.

[0029] At this time, the field effect transistor Tr remains in the on state. When a current flows between the source and drain of a transistor Tr, a field effect transistor The potential of the second gate of the transistor Tr changes. The value of the threshold voltage of the field-effect transistor Tr shifts in the positive direction. When the voltage reaches or exceeds V1-Vb, the field effect transistor Tr turns off. Thus, the threshold voltage data of the field effect transistor Tr is obtained.

[0030] Next, in a period T3, the switch Sw is turned off. The potential of the first gate of Tr is set to V1+Vsig, and the field effect transistor Tr is The first gate in the gate electrode is set in a floating state. Vsig is the potential of the data signal. The second gate of the field effect transistor Tr is set in a floating state. A potential Va is applied to one of the source and drain of the transistor Tr.

[0031] At this time, the field effect transistor Tr is turned on, and At this time, a current flows between the source and drain of the field effect transistor Tr. The potential of the other of the source and drain is set to potential Vc.

[0032] For example, when the field effect transistor Tr is operated in the saturation region, The current value (Ids) flowing between the source and drain of a field effect transistor (Tr) is It is determined according to the value of the data signal input to the first gate, regardless of the threshold voltage of Tr. Therefore, for example, when Vgs is greater than V1-Vb, the field effect transistor Tr is in an on state. This results in a current flow between the source and drain.

[0033] In addition, due to deterioration of the field effect transistor Tr, Even if the potential of the other drain changes, Since the first gate and the second gate are in a floating state and there is a capacitance element Cp, a field effect transistor This makes it possible to suppress a change in the voltage between the first gate and the source of the transistor Tr.

[0034] A mobility correction period is provided between the periods T2 and T3, and the mobility of the field-effect transistor Tr is The potential of the second gate of the field effect transistor Tr may be set according to the mobility. This makes it possible to suppress the influence of variations in the mobility of the field effect transistor Tr.

[0035] The above is a description of the example of the method for driving the semiconductor device according to this embodiment.

[0036] As described with reference to FIG. 1, in an example of the semiconductor device according to the present embodiment, the threshold voltage data A data acquisition period (for example, period T2) is set, and data on the threshold voltage of the field effect transistor is acquired in advance. This allows the current flowing between the source and drain of a field effect transistor to be calculated. Since the amount of the field effect transistor can be determined independently of the threshold voltage of the field effect transistor, This can suppress the effects of variations in the threshold voltage of the field-effect transistor. The impact of this can be suppressed.

[0037] In addition, in one example of the semiconductor device according to the present embodiment, the semiconductor devices are overlapped with each other via the channel formation region. A field effect transistor having a first gate and a second gate that are connected to each other is used. Therefore, even if the field effect transistor is a depletion type transistor, The threshold voltage data of the transistor can be obtained because the potential of the second gate As a result, the threshold voltage of the field-effect transistor can be shifted, The original threshold voltage of the field effect transistor is a negative value. and the voltage between the first gate and the source of the field effect transistor is This is because the field effect transistor can be turned off even if the potential does not become a negative value. Therefore, the amount of current flowing between the source and drain of a field effect transistor is called the field effect Since the threshold voltage of the field-effect transistor is not determined, the threshold voltage of the field-effect transistor is This can suppress the effects of variations in the

[0038] Therefore, in an example of the semiconductor device according to this embodiment, This allows the amount of current flowing between the source and drain to be controlled, thereby suppressing malfunctions.

[0039] (Embodiment 2) In this embodiment, an example of a light emitting device including a field effect transistor having two gates is described. This will be described with reference to FIG. 2 to FIG.

[0040] The light-emitting device shown in FIG. 2A includes wirings 151 to 158 and a field-effect transistor 11. 1 to 118, a capacitor 121, a capacitor 122, and a light-emitting element (also called EL) 140.

[0041] The wiring 151 has a function as, for example, a data signal line for supplying a data signal.

[0042] The wiring 152 has a function as, for example, a potential supply line for supplying a potential.

[0043] The wiring 153 serves as a gate signal line for supplying a gate signal, which is, for example, a pulse signal. It has the following functions.

[0044] The wiring 154 serves as a gate signal line for supplying a gate signal, which is, for example, a pulse signal. It has the following functions.

[0045] The wiring 155 serves as a gate signal line for supplying a gate signal, which is, for example, a pulse signal. It has the following functions.

[0046] The wiring 156 has a function as, for example, a potential supply line for supplying a potential.

[0047] The wiring 157 has a function as, for example, a potential supply line for supplying a potential.

[0048] The wiring 158 has a function as, for example, a potential supply line for supplying a potential.

[0049] One of the source and drain of the field effect transistor 111 is electrically connected to the wiring 151. The gate of the field effect transistor 111 is electrically connected to the wiring 153. are connected to the network.

[0050] One of the source and drain of the field effect transistor 112 is a field effect transistor. The other of the source and drain of the field effect transistor 111 is electrically connected to the The gate of the transistor 112 is electrically connected to a wiring 154 .

[0051] One of the pair of electrodes of the capacitance element 121 is connected to the source of the field effect transistor 111. The other of the source and drain is electrically connected to the first terminal.

[0052] The field effect transistor 113 has first gates overlapping each other via a channel forming region. and a second gate. The first gate of the field effect transistor 113 is It is electrically connected to the other of the source and drain of the effect transistor 112 .

[0053] One of the source and drain of the field effect transistor 114 is a field effect transistor. The field effect transistor 113 is electrically connected to one of the source and drain of the field effect transistor 113. The other of the source and drain of the field effect transistor 114 is The gate of the field effect transistor 114 is electrically connected to the second gate of the field effect transistor 114. The port is electrically connected to wiring 153 .

[0054] One of the pair of electrodes of the capacitor 122 is connected to the second The other of the pair of electrodes of the capacitor 122 is electrically connected to the gate of the The other of the source and drain of the field effect transistor 113 is electrically connected.

[0055] One of the source and drain of the field effect transistor 115 is electrically connected to the wiring 152. The other of the source and drain of the field effect transistor 115 is connected to , electrically connected to one of the source and drain of the field effect transistor 113. The gate of the field effect transistor 115 is electrically connected to the wiring 154. do.

[0056] One of the source and drain of the field effect transistor 116 is electrically connected to the wiring 156. The other of the source and drain of the field effect transistor 116 is connected to , electrically connected to the first gate of the field effect transistor 113. The gate of the effect transistor 116 is electrically connected to a wiring 153 .

[0057] One of the source and drain of the field effect transistor 117 is electrically connected to the wiring 157. The other of the source and drain of the field effect transistor 117 is connected to The other of the pair of electrodes in the capacitor 121 and the other of the pair of electrodes in the capacitor 122 The gate of the field effect transistor 117 is electrically connected to the wiring 1. 53.

[0058] One of the source and drain of the field effect transistor 118 is electrically connected to the wiring 158. The other of the source and drain of the field effect transistor 118 is connected to , electrically connected to the second gate of the field effect transistor 113. The gate of the effect transistor 118 is electrically connected to a wiring 155 .

[0059] One of the anode and cathode of the light emitting element 140 is connected to the field effect transistor 113. The light emitting element 140 may be, for example, For example, an electroluminescence element (also called an EL element) can be used.

[0060] Furthermore, the light emitting device shown in FIG. 2B has a field effect transistor similar to that of the light emitting device shown in FIG. The connection relationship between the capacitor 113 and the field effect transistor 117 is different.

[0061] In the light-emitting device shown in FIG. The other of the drains is electrically connected to the other of the source and drain of the field effect transistor 112. The first gate of the field effect transistor 113 is electrically connected to the capacitance element The other of the pair of electrodes in the field effect transistor 121 is electrically connected to the other of the pair of electrodes in the field effect transistor 1 The other of the source and drain of 17 is the source of the field effect transistor 112. and the other of the pair of electrodes of the capacitor 122. do.

[0062] The light-emitting device shown in FIG. 2C is a light-emitting device having a field-effect transistor similar to that of the light-emitting device shown in FIG. The connection relationship of 116 is different, and the wiring 156 is not present.

[0063] In the light-emitting device shown in FIG. 2C, the source and drain of the field-effect transistor 116 One of the drains is electrically connected to a first gate of the field effect transistor 113. The other of the source and drain of the field effect transistor 116 is a capacitance element. The other of the pair of electrodes of the field effect transistor 122 is electrically connected to the other of the pair of electrodes of the field effect transistor 1 13 may be an enhancement type transistor.

[0064] The configuration shown in FIG. 2C can reduce the number of wirings.

[0065] In addition to the light-emitting device shown in FIG. 2A, the light-emitting device shown in FIG. 3A further includes a wiring 159 and The wiring 160 is provided to connect the field effect transistor 111 and the field effect transistor 117. The relationship is different, and the field effect transistor 112 is not included.

[0066] In the light-emitting device shown in FIG. 3A, the gate of the field-effect transistor 111 is The first gate of the field effect transistor 113 is electrically connected to the line 159. The gate is electrically connected to the other of the source and drain of the field effect transistor 111. The gate of the field effect transistor 117 is electrically connected to the wiring 160. will be done.

[0067] The light-emitting device shown in FIG. 3B has a capacitance element 121 similar to that of the light-emitting device shown in FIG. It is a different configuration.

[0068] In the light-emitting device shown in FIG. 3B, the other of the pair of electrodes of the capacitor 121 is It is electrically connected to the other of the source and drain of the effect transistor 111 .

[0069] The light emitting device shown in FIG. 3C is the same as the field effect transistor 116 of the light emitting device shown in FIG. The connection relationship is different, and the wiring 156 is not provided.

[0070] In the light-emitting device shown in FIG. 3C, the source and drain of the field-effect transistor 116 One of the drains is electrically connected to a first gate of the field effect transistor 113. The other of the source and drain of the field effect transistor 116 is a capacitance element. The field effect transistor 113 is electrically connected to the other of the pair of electrodes of the field effect transistor 122. , or an enhancement type transistor.

[0071] The configuration shown in FIG. 3C can reduce the number of wirings.

[0072] In addition, by using the structures shown in FIGS. 3(A) to 3(C), The number can be reduced.

[0073] Also, an example of a light emitting device having a capacitance element for adjusting the voltage applied to the light emitting element 140 is shown. This will be explained with reference to FIG.

[0074] The light-emitting device shown in FIG. 4A has the structure of the light-emitting device shown in FIG. 2A, and further includes a capacitor element 123. Equipped with.

[0075] In the light-emitting device shown in FIG. 4A, one of a pair of electrodes of the capacitor 123 is a light-emitting The capacitor element 140 is electrically connected to one of the anode and the cathode. A reference potential is applied to one of the pair of electrodes at 123.

[0076] The light-emitting device shown in FIG. 4B has a structure in which a capacitance element The connection of the capacitor 123 is the same as that of the light-emitting device shown in FIG. It's the same.

[0077] The light-emitting device shown in FIG. 4C has a structure in which a capacitance element The connection of the capacitor 123 is the same as that of the light-emitting device shown in FIG. It's the same.

[0078] Note that the light emitting device is not limited to the light emitting device shown in FIG. 4(A) to FIG. 4(C). For example, the light emitting device shown in FIG. A capacitive element may be provided in addition to the configuration of the light emitting device shown in FIG.

[0079] Next, an example of a method for driving the light emitting device according to this embodiment will be described with reference to FIGS. .

[0080] As an example of a method for driving the light emitting device in this embodiment, a method for driving the light emitting device shown in FIG. An example will be described with reference to the timing chart of FIG. The device is a light-emitting device shown in FIG. 2A, in which the light-emitting element 140 is a light-emitting diode, and Each of the transistors 111 to 118 is an N-channel transistor. In this case, the light emitting device is a light emitting diode which is a light emitting element 140. The anode in the capacitor 122 is electrically connected to the other of the pair of electrodes in the capacitor 122. A potential Vx is applied to the cathode of the light-emitting diode which is the light-emitting element 140.

[0081] In the example of the method for driving the light emitting device shown in FIG. 5A, as shown in FIG. 5B, in the period T11, A high-level (VH) signal is input via the wiring 153, and a low-level (VL) signal is input via the wiring 154. and a high-level signal is input via wiring 155. A potential V11 is supplied to the wiring 156, and a potential V12 is supplied to the wiring 157. A potential V13 is supplied to the wiring 158. At this time, the potential difference between the potentials V11 and V12 is It is assumed that the threshold voltage (Vth113) of the field effect transistor 113 is larger than that of the field effect transistor 113. In addition, the potential V12 is assumed to be smaller than the potential Vx.

[0082] At this time, the field effect transistor 111, the field effect transistor 114, The transistor 116, the field effect transistor 117, and the field effect transistor 118 are in the ON state. The field effect transistor 112 and the field effect transistor 115 are in the off state. become.

[0083] In addition, the second gate and drain of the field effect transistor 113 are brought into a conductive state. The potentials of the second gate and the drain of the field effect transistor 113 are As a result, the threshold voltage of the field effect transistor 113 changes according to the potential V13. shifts in the negative direction.

[0084] In addition, the voltage between the first gate and the source of the field effect transistor 113 (Vgs1 The value of V11-V12 is the field effect threshold at this time. This is greater than the threshold voltage of the field effect transistor 113. Therefore, the field effect transistor 113 is turned on. It becomes a state.

[0085] Next, in a period T12, a data signal is input via the wiring 151, and a A high-level signal is input via the wiring 152, a low-level signal is input via the wiring 153, and a high-level signal is input via the wiring 154. A low-level signal is input via the line 5. A potential V11 is supplied to the line 156. 157 is supplied with a potential V12.

[0086] At this time, the field effect transistor 111, the field effect transistor 114, The resistor 116 and the field effect transistor 117 are turned on, and the field effect transistor The field effect transistor 112, the field effect transistor 115, and the field effect transistor 118 are in the off state. become.

[0087] Also, the field effect transistor 113 remains in the on state. A current flows between the source and drain of the transistor 113, forming a field effect transistor. The potential of the second gate of the transistor 113 changes. The value of the threshold voltage of the field effect transistor 113 is shifted in the positive direction, When the threshold voltage V11-V12 is reached, the field effect transistor 113 is turned off. In this way, the threshold voltage data of the field effect transistor 113 is obtained.

[0088] In addition, the potential of one of the pair of electrodes of the capacitor 121 is input through the wiring 151. This becomes the potential (Vsig) of the data signal.

[0089] Next, in a period T13, a low-level signal is input through the wiring 153, and A high-level signal is input via the line 152, and a low-level signal is input via the line 155. In addition, a potential Vdd is supplied to the wiring 152. Note that the value of the potential Vdd is higher than the potential V11. In addition, in the period T13, a low-level signal is input through the wiring 153. A high-level signal is then input via the wiring 154, but the present invention is not limited to this.

[0090] At this time, the field effect transistor 112 and the field effect transistor 115 are turned on. 1, a field effect transistor 111, a field effect transistor 114, a field effect transistor 116, field effect transistor 117, and field effect transistor 118 are turned off. do.

[0091] Furthermore, the potential of the first gate of the field effect transistor 113 is changed in response to the value of the data signal. This causes the field effect transistor 113 to turn on, A current flows between the source and drain of the transistor 113 .

[0092] Furthermore, a current flows between the anode and the cathode of the light-emitting diode, which is the light-emitting element 140. The flow causes the light emitting diode, which is the light emitting element 140, to emit light.

[0093] For example, when the field effect transistor 113 is operated in the saturation region, The current (Ids) flowing between the source and drain of the field effect transistor 113 is The threshold voltage of the first gate is determined according to the value of the data signal input to the first gate, regardless of the threshold voltage of the first gate. Therefore, for example, when Vgs113 is larger than V11-V12, the field effect transistor The transistor 113 is turned on, and a current flows between the source and drain.

[0094] In addition, the field effect transistor 113 may become unstable due to deterioration of the field effect transistor 113. Even if the potential of the other of the source and drain changes, the field effect transistor 113 The first gate and the second gate of the capacitance element 121 are in a floating state, and the capacitance element 1 22 between the first gate and source of the field effect transistor 113. This can suppress changes in the voltage value.

[0095] A mobility correction period is provided between the period T12 and the period T13, and the field effect transistor 11 The potential of the second gate of the field effect transistor 113 is set according to the mobility of the third This can suppress the influence of the variation in mobility of the field effect transistor 113. can.

[0096] This completes the description of the example of the method for driving the light emitting device shown in FIG.

[0097] Note that the field effect transistors 111 to 114 of the semiconductor device shown in FIG. One or more of the transistors 118 may be P-channel transistors.

[0098] Next, as an example of a method for driving the light emitting device in this embodiment, a method for driving the light emitting device shown in FIG. An example of the operation method will be described with reference to the timing chart in FIG. The light emitting device shown in FIG. 3A has a light emitting element 140 which is a light emitting diode. Each of the field effect transistors 111 to 118 is an N-channel transistor. In this case, the light emitting diode 140 is a light emitting device. The anode of the capacitor 122 is electrically connected to the other of the pair of electrodes of the capacitor 122. In addition, a potential Vx is applied to the cathode of the light emitting diode which is the light emitting element 140. do.

[0099] In the example of the method for driving the light emitting device shown in FIG. 6A, as shown in FIG. 6B, in the period T21, A high-level signal is input via the wiring 153, and a low-level signal is input via the wiring 154. A high-level signal is input via wiring 155, and a low-level signal is input via wiring 159. A low level signal is input through the wiring 160, and a low level signal is input through the wiring 1 A potential V11 is supplied to the wiring 56, a potential V12 is supplied to the wiring 157, and a potential V13 is supplied to the wiring 158. At this time, the potential difference between the potential V11 and the potential V12 is It is assumed that the potential V12 is larger than the threshold voltage of the potential Vx.

[0100] At this time, the field effect transistor 114, the field effect transistor 116, The resistor 117 and the field effect transistor 118 are turned on, and the field effect transistor The capacitor 111 and the field effect transistor 115 are turned off.

[0101] In addition, the second gate and drain of the field effect transistor 113 are brought into a conductive state. The potentials of the second gate and the drain of the field effect transistor 113 are As a result, the threshold voltage of the field effect transistor 113 changes according to the potential V13. shifts in the negative direction.

[0102] In addition, the voltage between the gate and source of the field effect transistor 113 is V11-V12 The value of V11-V12 is determined by the threshold voltage of the field effect transistor 113 at this time. As a result, the field effect transistor 113 is turned on.

[0103] In addition, in the period T22, a high-level signal is input through the wiring 153, and a high-level signal is input through the wiring 154. A low-level signal is input via the wiring 155, and a low-level signal is input via the wiring 156. A low level signal is input via line 159, and a high level signal is input via line 160. In addition, a potential V11 is supplied to the wiring 156, and a potential V12 is supplied to the wiring 157.

[0104] At this time, the field effect transistor 114, the field effect transistor 116, and the field effect transistor The transistor 117 is turned on, and the field effect transistor 111 The capacitor 115 and the field effect transistor 118 are turned off.

[0105] Also, the field effect transistor 113 remains in the on state. A current flows between the source and drain of the transistor 113, forming a field effect transistor. The potential of the second gate of the transistor 113 changes. The value of the threshold voltage of the field effect transistor 113 is shifted in the positive direction, When the threshold voltage V11-V12 is reached, the field effect transistor 113 is turned off. In this way, the threshold voltage data of the field effect transistor 113 is obtained.

[0106] Next, in a period T23, a low-level signal is input via the wiring 153, and A low-level signal is input via the wiring 155, and a low-level signal is input via the wiring 156. A high level signal is input via line 159, and a low level signal is input via line 160. In addition, a data signal is input via a wiring 151.

[0107] At this time, the field effect transistor 111 is turned on, and the field effect transistor 114 , field effect transistor 115, field effect transistor 116, field effect transistor 1 17, and field effect transistor 118 are turned off.

[0108] At this time, the potential of the first gate of the field effect transistor 113 becomes equal to the data signal (Vs ig) changes depending on the potential.

[0109] Next, in a period T24, a low-level signal is input via the wiring 153, and A high-level signal is input via the wiring 150, a low-level signal is input via the wiring 155, and A low level signal is input via line 159, and a low level signal is input via line 160. In addition, a potential Vdd is supplied through a wiring 152. It is assumed to be higher than V11.

[0110] At this time, the field effect transistor 115 is turned on, and the field effect transistor 111 , field effect transistor 114, field effect transistor 116, field effect transistor 1 17, and field effect transistor 118 are turned off.

[0111] In addition, the field effect transistor 113 is turned on. Current flows between the source and drain of the transistor.

[0112] Furthermore, a current flows between the anode and the cathode of the light-emitting diode, which is the light-emitting element 140. The flow causes the light emitting diode, which is the light emitting element 140, to emit light.

[0113] For example, when the field effect transistor 113 is operated in the saturation region, The current (Ids) flowing between the source and drain of the field effect transistor 113 is Regardless of the threshold voltage of the transistor 113, the data signal (Vsig) input to the first gate Therefore, for example, if Vgs113 is greater than V11-V12, the electric field The effect transistor 113 is turned on, and a current flows between the source and drain.

[0114] In addition, due to deterioration of the field effect transistor 113, Even if the potential of the other of the source and drain in the field effect transistor 1 changes, The first gate and the second gate of the capacitor 13 are in a floating state, and the capacitor Because of the element 122, the first gate and source of the field effect transistor 113 This can suppress the change in the voltage value in the

[0115] A mobility correction period is provided between the period T23 and the period T24, and the field effect transistor 11 The potential of the second gate of the field effect transistor 113 is set according to the mobility of the third This can suppress the influence of the variation in mobility of the field effect transistor 113. can.

[0116] Note that the field effect transistors 111 to 114 of the semiconductor device shown in FIG. One or more of the transistors 118 may be P-channel transistors.

[0117] This completes the description of the example of the method for driving the light-emitting device shown in FIG.

[0118] As described with reference to FIGS. 5 and 6, in one example of the light emitting device according to this embodiment, the threshold voltage A voltage data acquisition period is set, and data on the threshold voltage of the field effect transistor is acquired in advance. This allows the amount of current flowing between the source and drain of a field effect transistor to be calculated as the field effect Since the threshold voltage of the field-effect transistor can be determined independently, The effect of threshold voltage variations can be suppressed. The impact can be suppressed.

[0119] In addition, in one example of the light emitting device according to the present embodiment, a first gate and a second gate are provided. A field effect transistor is used. With the above configuration, the field effect transistor is in the depletion mode. It is possible to obtain threshold voltage data for field effect transistors, even for silicon-type transistors. In other words, the threshold voltage of the field effect transistor can be shifted by the potential of the second gate. Therefore, the field effect transistor is an N-channel transistor, and the field effect transistor The original threshold voltage of the transistor is a negative value and is normally on, and the field effect transistor Even if the voltage between the first gate and source of the field effect transistor does not become negative, This is because the source of the field effect transistor can be turned off. The amount of current flowing between the source and drain is determined regardless of the threshold voltage of the field-effect transistor. Therefore, the influence of variations in the threshold voltage of the field effect transistor can be suppressed.

[0120] Therefore, in one example of the light emitting device according to the present embodiment, the source of the field effect transistor Since the amount of current flowing between the gate and drain can be controlled, malfunctions can be suppressed.

[0121] (Embodiment 3) In this embodiment, a configuration example of a light emitting device including a drive circuit will be described with reference to FIG.

[0122] The semiconductor device shown in FIG. 7 includes a first driver circuit 901, a second driver circuit 902, and a plurality of light emitting devices. and an optical circuit 910.

[0123] The first driver circuit 901 has a function of controlling the light emitting operation of the light emitting circuit 910 .

[0124] The first driver circuit 901 is configured using, for example, a shift register.

[0125] The second driver circuit 902 has a function of controlling the light emitting operation of the light emitting circuit 910 .

[0126] The second driving circuit 902 is configured using, for example, a shift register, an analog switch, etc. can be.

[0127] The light emitting circuits 910 are arranged in a row and column direction in the light emitting unit 900. As the light emitting device, the configuration of the light emitting device shown in the above-mentioned embodiment 2 can be applied. The wiring electrically connected to the gate of the field effect transistor in the light emitting device shown in the second embodiment A signal is supplied to the line from a first driving circuit 901. A data signal is supplied from a second driver circuit 902 to a wiring to which a data signal is input. will be done.

[0128] Note that the first driver circuit 901 and the light emitting circuit 910 may be provided on the same substrate.

[0129] The above is a description of the configuration example of the light emitting device shown in FIG.

[0130] As described with reference to FIG. 7, in one example of the light emitting device according to the present embodiment, the first driving circuit The light emitting operation of the light emitting circuit can be controlled by the second drive circuit.

[0131] (Embodiment 4) In this embodiment, a field effect transistor in the semiconductor device or light emitting device of the above embodiment is An example of the above will be described.

[0132] An example of the structure of the field effect transistor in this embodiment will be described with reference to FIG.

[0133] The field effect transistor shown in FIG. 8A has a conductive layer 40 on an element formation layer 400_A. 1_A, an insulating layer 402_A, a semiconductor layer 403_A, a conductive layer 405a_A, and a conductive layer 405b_A and an insulating layer 406.

[0134] In addition, the field effect transistor shown in FIG. 8B has a conductive layer on the element formation layer 400_B. layer 401_B, an insulating layer 402_B, and a semiconductor layer 404 including a region 404a and a region 404b. 03_B, conductive layer 405a_B, conductive layer 405b_B, and insulating layer 407.

[0135] Furthermore, each component shown in FIG. 8(A) and FIG. 8(B) will be described.

[0136] The element formation layer 400_A and the element formation layer 400_B may be, for example, an insulating layer or an insulating A substrate having a surface or the like can be used.

[0137] Each of the conductive layer 401_A and the conductive layer 401_B serves as a gate of a field effect transistor. The layer that functions as the gate of a field effect transistor is called a gate. It is also called a gate electrode or gate wiring.

[0138] The conductive layer 401_A and the conductive layer 401_B may be made of, for example, molybdenum, magnesium, or titanium. Tantalum, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium It uses layers (single layer or laminated layer) of metal materials such as zinc or alloy materials that have these as the main components. It is possible.

[0139] Each of the insulating layer 402_A and the insulating layer 402_B serves as a gate insulator of a field effect transistor. It functions as an edge layer.

[0140] The insulating layer 402_A and the insulating layer 402_B may be, for example, silicon oxide, silicon nitride, Silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum nitride, oxynitride of materials such as aluminum, aluminum oxide nitride, hafnium oxide, or lanthanum oxide Layers (single or multilayers) can be used.

[0141] In addition, the insulating layer 402_A and the insulating layer 402_B may be, for example, the first element of the periodic table. An insulating layer made of a material containing a Group 3 element and an oxygen element can also be used.

[0142] Examples of materials containing a Group 13 element and an oxygen element include gallium oxide and aluminum oxide. , aluminum gallium oxide, and aluminum gallium oxide. Aluminum gallium is a material that has a higher aluminum content (atomic percent) than the gallium content (atomic percent). Gallium aluminum oxide is a substance with a high gallium content (atomic percent). This refers to a substance in which the atomic percent of aluminum contained is greater than the atomic percent of aluminum.

[0143] Each of the semiconductor layer 403_A and the semiconductor layer 403_B is a channel of a field effect transistor. A layer in which a channel is formed (also called a channel forming layer), i.e. a layer having a channel forming region The semiconductor layer 403_A and the semiconductor layer 403_B can be applied to Examples of such semiconductors include those containing elements of Group 14 of the periodic table (such as silicon). For example, a silicon semiconductor layer can be a single crystal semiconductor layer, a polycrystalline semiconductor layer, or the like. The semiconductor layer may be a semiconductor layer, a microcrystalline semiconductor layer, or an amorphous semiconductor layer.

[0144] Examples of semiconductors that can be used for the semiconductor layer 403_A and the semiconductor layer 403_B include The band gap is wider than that of silicon, for example, 2 eV or more, preferably 2.5 eV or more, More preferably, a semiconductor having a conductivity of 3 eV or more can be used. For example, the semiconductor layer 403 Examples of semiconductors that can be used for the semiconductor layers 403_A and 403_B include In-based oxides (e.g., indium oxide). Sn-based oxides (e.g. tin oxide), or Zn-based oxides (e.g. zinc oxide) An oxide semiconductor such as a metal oxide (eg, lead) can be used.

[0145] The metal oxide may be, for example, a quaternary metal oxide, a ternary metal oxide, a binary metal oxide, or a combination thereof. Metal oxides such as metal oxides can also be used. Possible metal oxides contain gallium as a stabilizer to reduce property variability. The metal oxide applicable as the oxide semiconductor may be the above-mentioned stabilizer. The oxide semiconductor may contain tin as an isomer. The oxide semiconductor may contain hafnium as the stabilizer. Metal oxides applicable as conductors include aluminum as the stabilizer. The metal oxide applicable as the oxide semiconductor may be the stabilizer. The lanthanides are lanthanum, cerium, praseodymium, neodymium, and samarylium. , europium, gadolinium, terbium, dysprosium, holmium, erbium The element may include one or more of tungsten, thulium, ytterbium, and lutetium. In addition, the metal oxide applicable as the oxide semiconductor may contain silicon oxide. .

[0146] For example, the quaternary metal oxides include In-Sn-Ga-Zn oxides, In-H f-Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide oxide, In-Sn-Hf-Zn oxide, In-Hf-Al-Zn oxide, etc. It is possible.

[0147] As the ternary metal oxide, for example, In-Ga-Zn oxide, In-Sn-Zn oxides, In-Al-Zn oxides, Sn-Ga-Zn oxides, Al-Ga-Zn oxides Oxide, Sn-Al-Zn oxide, In-Hf-Zn oxide, In-La-Zn In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd-Zn oxide Oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, In-Gd-Zn oxide oxides, In-Tb-Zn oxides, In-Dy-Zn oxides, In-Ho-Zn oxides In-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides Alternatively, In-Lu-Zn ​​oxide or the like can be used.

[0148] In addition, examples of binary metal oxides include In-Zn oxides, Sn-Zn oxides, and A l-Zn oxide, Zn-Mg oxide, Sn-Mg oxide, In-Mg oxide, I An n-Sn based oxide or an In-Ga based oxide can be used.

[0149] In addition, as an oxide semiconductor, InLO3(ZnO) m (m is a number greater than 0) Materials that can be used include InLO3(ZnO) m L is Ga, Al, Mn, and and Co.

[0150] For example, an oxide semiconductor is In:Ga:Zn=1:1:1 (=1 / 3:1 / 3:1 / 3) or In with an atomic ratio of In:Ga:Zn=2:2:1 (=2 / 5:2 / 5:1 / 5) -Ga-Zn oxides or oxides with compositions close to those can be used. The conductor is In:Sn:Zn=1:1:1 (=1 / 3:1 / 3:1 / 3), In:S n:Zn=2:1:3(=1 / 3:1 / 6:1 / 2) or In:Sn:Zn=2:1:5 In-Sn-Zn oxides with atomic ratios of (=1 / 4:1 / 8:5 / 8) and those with similar compositions For example, the composition of the semiconductor layer to be formed may be the above-mentioned oxide. It is preferable to form the semiconductor layer using a sputtering target having such a composition.

[0151] In addition, when an oxide semiconductor is used for the semiconductor layer 403_A and the semiconductor layer 403_B, the semiconductor The layer may be in a monocrystalline, polycrystalline, or amorphous state. stomach.

[0152] The semiconductor layer 403_A and the semiconductor layer 403_B are made of CAAC-OS (C Ax is Aligned Crystalline Oxide Semiconductor Alternatively, an oxide semiconductor layer containing a metal oxide layer or a metal oxide semiconductor layer containing a metal oxide layer may be used.

[0153] CAAC-OS is a mixed phase structure of crystalline and amorphous regions, and the crystallinity of the crystalline regions is The c-axis is perpendicular to the surface on which the semiconductor layer is formed or the surface of the semiconductor layer, and the three-dimensional structure is formed from the surface perpendicular to the ab-plane. It has a square or hexagonal atomic arrangement, and the metal atoms are arranged in a layered or gold-plated form when viewed perpendicular to the c-axis. CAAC-OS is a structure in which metal atoms and oxygen atoms are arranged in layers. It is not completely single crystal, nor completely amorphous. When the crystals have a plurality of crystalline regions, the orientations of the a-axis and b-axis of the crystals may be different from each other.

[0154] The size of the crystals in the crystalline region of the CAAC-OS is estimated to be on the order of several nm to several tens of nm. However, observation of CAAC-OS using a transmission electron microscope (also known as TEM) In the CAAC-OS, the boundary between the crystalline region and the amorphous region is not necessarily clear. In addition, no grain boundaries are observed in the CAAC-OS. Since it includes an area without grain boundaries, the decrease in electron mobility caused by grain boundaries is small.

[0155] In addition, the distribution of the crystalline regions in the CAAC-OS may not be uniform. When an oxide semiconductor layer containing CAAC-OS is formed by crystal growth from the surface side of the semiconductor layer, In this case, the proportion of the crystalline region in the vicinity of the surface of the oxide semiconductor layer in the CAAC-OS portion is The oxide semiconductor layer is formed on the CAAC-OS surface. The proportion of may be high.

[0156] In addition, the c-axis of the crystal in the crystalline region of CAAC-OS is Since the oxide in the CAAC-OS portion is perpendicular to the surface on which the oxide semiconductor layer is formed, The direction of the c-axis varies depending on the shape of the semiconductor layer (the cross-sectional shape of the surface on which it is formed or the cross-sectional shape of the surface). The c-axis in the crystalline region of the CAAC-OS is The surface of the oxide semiconductor layer is formed substantially perpendicular to the surface on which the oxide semiconductor layer is formed.

[0157] In the CAAC-OS, a portion of oxygen may be substituted with nitrogen.

[0158] In addition, CAAC-OS has a composition in the crystal region of In 1+σ Ga 1-σ O3(ZnO) M (where 0 < σ < 1, M is a number from 1 to 3), and the overall composition is In P Ga Q O R ( ZnO) M (where 0 < P < 2, 0 < Q < 2, M is a number from 1 to 3), which is preferable. is preferable.

[0159] When using an oxide semiconductor layer containing CAAC-OS, the layer in contact with the lower surface of the oxide semiconductor layer is preferably flat. For example, the average surface roughness of the layer in contact with the lower surface of the oxide semiconductor layer containing CAAC-OS is preferably 1 nm or less, more preferably 0.3 nm or less. By improving the flatness of the layer in contact with the lower surface of the oxide semiconductor layer containing CAAC-OS, the mobility can be improved to be higher than that of an oxide semiconductor that is entirely amorphous. For example, the layer in contact with the lower surface of the oxide semiconductor layer containing CAAC-OS can be planarized by one or more of chemical mechanical polishing (CMP) treatment and plasma treatment. At this time, the plasma treatment includes a process of sputtering the surface with a rare gas ion and a process of etching the surface using an etching gas. can also be included. When an oxide semiconductor layer containing CAAC-OS is used in a field-effect transistor, the variation in the electrical characteristics of the field-effect transistor due to irradiation with visible light or ultraviolet light is suppressed, so a highly reliable field-effect transistor can be obtained. Furthermore, in regions 404a and 404b shown in FIG. 8(B), dopants are added and the electric is added.

[0160] By using an oxide semiconductor layer containing CAAC-OS in a field-effect transistor, the variation in the electrical characteristics of the field-effect transistor due to irradiation with visible light or ultraviolet light is suppressed, so a highly reliable field-effect transistor can be obtained. is obtained.

[0161] Furthermore, in regions 404a and 404b shown in FIG. 8(B), dopants are added and the electric The dopant functions as the source or drain of a field effect transistor. For example, elements in group 13 of the periodic table (such as boron), elements in group 15 of the periodic table elements (e.g., one or more of nitrogen, phosphorus, and arsenic), and rare gas elements (e.g., helium One or more of the following gases can be used: fluorine, argon, and xenon. The region that functions as the source of a field effect transistor is also called the source region. The region that functions as the drain of a field effect transistor is also called the drain region. By adding a dopant to the region 404a and the region 404b, the resistance between the conductive layer is reduced. It can be done.

[0162] Conductive layer 405a_A, conductive layer 405b_A, conductive layer 405a_B, and conductive layer 405b_ Each of B functions as a source or drain of a field effect transistor. The layer having the function of the source of the field effect transistor is called a source electrode or a source wiring. The layer that functions as the drain of a field effect transistor is called a drain electrode or Also called the drain wire.

[0163] Conductive layer 405a_A, conductive layer 405b_A, conductive layer 405a_B, and conductive layer 405b_ Examples of B include aluminum, magnesium, chromium, copper, tantalum, titanium, and molybdenum. Metallic materials such as butenol or tungsten, or alloys whose main components are these metallic materials A layer (single layer or multilayer) of gold material may be used.

[0164] In addition, the conductive layer 405a_A, the conductive layer 405b_A, the conductive layer 405a_B, and the conductive layer 40 A layer containing a conductive metal oxide may be used as 5b_B. Examples of the oxide include indium oxide, tin oxide, zinc oxide, indium oxide, tin oxide, Alternatively, indium oxide zinc oxide can be used. 405b_A, conductive layer 405a_B, and a conductive metal applicable to conductive layer 405b_B. The oxide may include silicon oxide.

[0165] The insulating layer 406 may be, for example, a layer (single layer or laminate) of a material applicable to the insulating layer 402_A. can be used.

[0166] The insulating layer 407 may be, for example, a layer (single layer or laminate) of a material applicable to the insulating layer 402_A. can be used.

[0167] In the case where an oxide semiconductor layer is used as the semiconductor layer 403_A or the semiconductor layer 403_B, For example, hydrogen, water, a hydroxyl group, or a hydride ( impurities such as hydrogen compounds (also called hydrogen compounds) are removed and oxygen is supplied to the oxide semiconductor layer. For example, the oxide semiconductor layer can be highly purified by the above-mentioned method. In addition, a layer containing oxygen is used as the layer to be heated, and the oxide semiconductor layer is heated. It can be purified.

[0168] For example, the heat treatment is performed at a temperature of 400° C. or higher and 750° C. or lower, or at a temperature of 400° C. or higher and lower than the distortion point of the substrate. Furthermore, a heat treatment may be performed in the subsequent step. The heat treatment device for the treatment may be, for example, an electric furnace or a heat source such as a resistance heater. A device that heats the workpiece by conduction or thermal radiation can be used. For example, the GRTA (G as Rapid Thermal Anneal) equipment or LRTA (Lamp Ra RTA (Rapid Therma Anneal) equipment such as pid Thermal Anneal The LRTA device can be used with a halogen lamp, for example. , metal halide lamps, xenon arc lamps, carbon arc lamps, high pressure sodium The subject may be exposed to radiation (electromagnetic waves) emitted from lamps such as mercury lamps or high-pressure mercury lamps. The GRTA device uses high-temperature gas to heat the material. The high-temperature gas is, for example, a rare gas, or a gas that reacts with the workpiece by heating. An inert gas (eg, nitrogen) that does not cause the oxidation can be used.

[0169] After the above heat treatment, the heating temperature is maintained or the temperature is decreased from the heating temperature. In the process of the heating process, high-purity oxygen gas, high-purity N2O gas, or Alternatively, ultra-dry air (with a dew point of -40°C or less, preferably -60°C or less) may be introduced. In this case, it is preferable that the oxygen gas or N2O gas does not contain water, hydrogen, etc. In addition, the purity of the oxygen gas or N2O gas introduced into the heat treatment device is set to 6N or more, preferably 7N or more. N or more, that is, the impurity concentration in oxygen gas or N2O gas is 1 ppm or less, preferably It is preferable to keep the concentration below 0.1 ppm. Oxides are formed by the action of oxygen gas or N2O gas. Oxygen is supplied to the semiconductor layer, and defects due to oxygen deficiency in the oxide semiconductor layer can be reduced. The introduction of the high-purity oxygen gas, high-purity NO gas, or ultra-dry air is performed at the same time as the heating It may be carried out during processing.

[0170] In addition, in the case of forming an oxide semiconductor layer containing CAAC-OS, a sputtering method is used. The temperature of the element formation layer on which the oxide semiconductor film is to be formed is set to 100° C. or higher and 600° C. or lower, preferably The oxide is formed at a temperature of 150°C to 550°C, preferably 200°C to 500°C. The temperature of the element formation layer is increased to form an oxide semiconductor film. As a result, the atomic arrangement in the oxide semiconductor film is well-ordered, the density is increased, and the oxide semiconductor film becomes polycrystalline or CAAC-OS. Furthermore, deposition in an oxygen gas atmosphere also reduces the amount of excess rare gases. Since it does not contain any atoms, polycrystals or CAAC-OS are easily formed. The atmosphere may be a mixture of rare gas and oxygen gas. In that case, the ratio of oxygen gas should be 30% by volume or more. %, preferably 50% by volume or more, and more preferably 80% by volume or more.

[0171] By using a highly purified oxide semiconductor layer in a field effect transistor, The carrier density of the layer is 1×10 14 / cm 3 Less than 1 x 10 12 / cm 3 less than , and more preferably 1×10 11 / cm 3 In addition, the channel width can be reduced to less than The off-current of a field-effect transistor is 10 aA (1 × 10 -17 A) The following, and further 1 aA(1×10 -18 A) or less, or even 10zA (1×10 -20 A) The following, and further 1zA(1×10 -21 A) or less, and even 100yA (1×10 -22 A) The following can be done: The lower the off-current of a field effect transistor, the better. The lower limit of the off-state current of a field-effect transistor is approximately 10 -30 It is estimated to be A / μm. do.

[0172] As described with reference to FIG. 8, an example of the field effect transistor according to the present embodiment is By applying the present invention to a field effect transistor in a semiconductor device or a light emitting device, It can constitute a conductive device or a light emitting device.

[0173] (Embodiment 5) In this embodiment, a structural example of a light emitting device will be described. Assume that the device has the circuit configuration shown in FIG.

[0174] The light emitting device in this embodiment is a first light emitting device provided with a semiconductor element such as a field effect transistor. A first substrate (also called an active matrix substrate), a second substrate, and a first substrate and a second substrate and a light emitting element provided between the substrates.

[0175] First, a structural example of an active matrix substrate in the light emitting device of this embodiment is shown in FIG. FIG. 9 shows the active matrix substrate in the light emitting device of this embodiment. 9A is a schematic plan view of a structure example; and FIG. 9B is a schematic plan view of a structure example. FIG. 9(C) is a schematic cross-sectional view taken along line AB in FIG. 9(A). FIG. 9 is a schematic cross-sectional view of the line segment CD in FIG. 9. Note that components in FIG. 9 are not shown to scale. For convenience, FIG. 9(B) shows a part of a cross section of the line segment AB in FIG. In addition, FIG. 9(C) shows a part of the cross section of the line segment CD in FIG. It has been omitted.

[0176] The active matrix substrate shown in FIG. 9 includes a substrate 500 and conductive layers 511a to 51 1h, the insulating layer 512, the semiconductor layers 513a to 513h, and the conductive layers 515a to The semiconductor device includes a conductive layer 515l, an insulating layer 516, a conductive layer 517a, and a conductive layer 517b.

[0177] Each of the conductive layers 511 a to 511 h is provided on one surface of the substrate 500 .

[0178] The conductive layer 511a is, for example, in the field effect transistor 111 of the light emitting device shown in FIG. the gate in the field effect transistor 114, the gate in the field effect transistor 116 the gate of the field effect transistor 117, and the wiring 153. It has functions.

[0179] The conductive layer 511b is, for example, in the field effect transistor 112 of the light emitting device shown in FIG. functions as a gate in the semiconductor device, a gate in the field effect transistor 115, and a wiring 154; has.

[0180] The conductive layer 511c has a function as, for example, the wiring 156 of the light-emitting device shown in FIG. .

[0181] The conductive layer 511d is, for example, in the field effect transistor 113 of the light emitting device shown in FIG. It functions as the first gate in the

[0182] The conductive layer 511e is, for example, a pair of electrodes in the capacitor 121 of the light-emitting device shown in FIG. The second electrode functions as the other of the pair of electrodes of the capacitor 122 .

[0183] The conductive layer 511f has a function as, for example, the wiring 157 of the light-emitting device shown in FIG. .

[0184] The conductive layer 511g is, for example, in the field effect transistor 118 of the light emitting device shown in FIG. The gate 154 functions as a gate for receiving the gate electrode 154 and a wiring 155 .

[0185] The conductive layer 511h has a function as, for example, the wiring 158 of the light-emitting device shown in FIG. .

[0186] The insulating layer 512 is provided over the conductive layers 511a to 511h. For example, the field effect transistor 111 of the light emitting device shown in FIG. The gate insulating layer in the gate electrode 118 and the inductor in the capacitance element 121 and the capacitance element 122 are It functions as a conductive layer.

[0187] The semiconductor layer 513a overlaps with the conductive layer 511a with the insulating layer 512 interposed therebetween. a is, for example, the channel length of the field effect transistor 111 of the light emitting device shown in FIG. It functions as a cambium layer.

[0188] The semiconductor layer 513b overlaps with the conductive layer 511b with the insulating layer 512 interposed therebetween. b is, for example, the channel in the field effect transistor 112 of the light emitting device shown in FIG. It functions as a cambium layer.

[0189] The semiconductor layer 513c overlaps with the conductive layer 511a with the insulating layer 512 interposed therebetween. c is, for example, the channel in the field effect transistor 116 of the light emitting device shown in FIG. It functions as a cambium layer.

[0190] The semiconductor layer 513d overlaps with the conductive layer 511d with the insulating layer 512 interposed therebetween. d is, for example, the channel density in the field effect transistor 113 of the light emitting device shown in FIG. It functions as a cambium layer.

[0191] The semiconductor layer 513e overlaps with the conductive layer 511b with the insulating layer 512 interposed therebetween. e is, for example, the channel length in the field effect transistor 115 of the light emitting device shown in FIG. It functions as a cambium layer.

[0192] The semiconductor layer 513f overlaps with the conductive layer 511a with the insulating layer 512 interposed therebetween. f is, for example, the channel length of the field effect transistor 117 of the light emitting device shown in FIG. It functions as a cambium layer.

[0193] The semiconductor layer 513g overlaps with the conductive layer 511a with the insulating layer 512 interposed therebetween. g is, for example, the channel length of the field effect transistor 114 of the light emitting device shown in FIG. It functions as a cambium layer.

[0194] The semiconductor layer 513h overlaps with the conductive layer 511g with the insulating layer 512 interposed therebetween. h is, for example, the channel length of the field effect transistor 118 of the light emitting device shown in FIG. It functions as a cambium layer.

[0195] The conductive layer 515a is electrically connected to the semiconductor layer 513a. The conductive layer 515a is, for example, The source and drain of the field effect transistor 111 of the light emitting device shown in FIG. On the other hand, it also functions as the wiring 151 .

[0196] The conductive layer 515b is electrically connected to the semiconductor layer 513a and the semiconductor layer 513b. The conductive layer 515b overlaps with the conductive layer 511e with the insulating layer 512 interposed therebetween. For example, the source and the other of the drains, one of the source and drain of the field effect transistor 112, and The second electrode functions as one of a pair of electrodes of the capacitor 121 .

[0197] The conductive layer 515c is electrically connected to the semiconductor layer 513c. An opening penetrating the insulating layer 512 electrically connects to the conductive layer 511c. The conductive layer 515c is, for example, a conductive layer for the field-effect transistor 116 of the light-emitting device shown in FIG. The gate electrode functions as one of the source and drain in the semiconductor laser.

[0198] The conductive layer 515d is electrically connected to the semiconductor layer 513b. The conductive layer 515d overlaps with the semiconductor layer 513c. The conductive layer 515d is electrically connected to the conductive layer 511d at the opening formed in the conductive layer 515d. In addition to the source and drain of the field effect transistor 112 of the light emitting device shown in FIG. and functioning as the other of the source and drain in the field effect transistor 116. has.

[0199] The conductive layer 515e electrically connects the semiconductor layers 513d, 513e, and 513g. The conductive layer 515e is, for example, a field effect transistor of the light emitting device shown in FIG. One of the source and drain of the field effect transistor 113, One of the source and drain, and the source and drain in the field effect transistor 115 It functions as the other side of the in.

[0200] The conductive layer 515f is electrically connected to the semiconductor layer 513d. An opening penetrating the insulating layer 512 electrically connects to the conductive layer 511e. The conductive layer 515f is, for example, a conductive layer for the field-effect transistor 113 of the light-emitting device shown in FIG. The other of the source and drain in the semiconductor memory device is also used.

[0201] The conductive layer 515g is electrically connected to the semiconductor layer 513e. The conductive layer 515g is, for example, The source and drain of the field effect transistor 115 of the light emitting device shown in FIG. On the other hand, it also functions as a wiring 152 .

[0202] The conductive layer 515h is electrically connected to the semiconductor layer 513g. The conductive layer 515h overlaps with the conductive layer 511e with the insulating layer 512 interposed therebetween. The other of the source and drain in the field effect transistor 114 of the light emitting device shown in FIG. The second electrode functions as one of a pair of electrodes of the capacitor 122 .

[0203] The conductive layer 515i is electrically connected to the semiconductor layer 513h. An opening penetrating the insulating layer 512 electrically connects to the conductive layer 511h. The conductive layer 515i is, for example, a field effect transistor 118 of the light emitting device shown in FIG. The gate electrode functions as one of the source and drain in the semiconductor laser.

[0204] The conductive layer 515j is electrically connected to the semiconductor layer 513h. The conductive layer 515j is, for example, The source and drain of the field effect transistor 118 of the light emitting device shown in FIG. It has the function of the other.

[0205] The conductive layer 515k is electrically connected to the semiconductor layer 513f. An opening penetrating the insulating layer 512 electrically connects to the conductive layer 511f. The conductive layer 515k is, for example, a field effect transistor 117 of the light emitting device shown in FIG. The gate electrode functions as one of the source and drain in the semiconductor laser.

[0206] The conductive layer 515l is electrically connected to the semiconductor layer 513f. An opening penetrating the insulating layer 512 electrically connects to the conductive layer 511e. The conductive layer 515l is, for example, a field effect transistor 117 of the light emitting device shown in FIG. The other of the source and drain in the semiconductor memory device is also used.

[0207] The insulating layer 516 is formed between the semiconductor layers 513a to 513h and the conductive layers 515a to 515h. It is provided on top of layer 515l.

[0208] The conductive layer 517a overlaps with the semiconductor layer 513d with the insulating layer 516 interposed therebetween. 17a is a conductive layer 515h and a conductive layer 515b in an opening formed through the insulating layer 516. The conductive layer 517a is electrically connected to the light-emitting element 515j. It functions as a second gate in the field effect transistor 113 .

[0209] The conductive layer 517b is connected to the conductive layer 515f at an opening provided through the insulating layer 516. are electrically connected.

[0210] Further, a structural example of the light emitting device according to this embodiment will be described with reference to FIG. 1 is a schematic cross-sectional view showing a structural example of a light emitting device according to this embodiment. In the light emitting device, the light emitting element emits light in the upward direction. The structure may be such that the light is emitted downward without being directed downward.

[0211] The light emitting device shown in FIG. 10 includes an insulating layer 518 and an active matrix substrate shown in FIG. , a conductive layer 519, an insulating layer 521, a light-emitting layer 522, a conductive layer 523, a substrate 524, It includes a coloring layer 525 , an insulating layer 526 , and an insulating layer 527 .

[0212] The insulating layer 518 is provided on the insulating layer 516, the conductive layer 517a, and the conductive layer 517b. .

[0213] The conductive layer 519 is provided on the insulating layer 518. The conductive layer 519 is also provided on the insulating layer 518. The conductive layer 51 is electrically connected to the conductive layer 517b through an opening formed therethrough. 9 functions as one of the anode and cathode of the light-emitting element 140 shown in FIG. Possesses the ability.

[0214] An insulating layer 521 is provided over the conductive layer 519 .

[0215] The light-emitting layer 522 is electrically connected to the conductive layer 519 through an opening provided in the insulating layer 521. The light-emitting layer 522 functions as the light-emitting layer of the light-emitting element 140 shown in FIG. has.

[0216] The conductive layer 523 is electrically connected to the light emitting layer 522. The conductive layer 523 is, for example, ) serves as the other of the anode and cathode of the light-emitting element 140 shown in FIG.

[0217] In one example of the light emitting device according to the present embodiment, the light emitting element is configured to emit light in an upward direction. However, the present invention is not limited to this structure, and it is also possible to use a structure in which light is emitted downward. Cut.

[0218] The colored layer 525 is formed on the substrate so as to transmit light of a specific wavelength from the light emitting layer 522. 524 are provided on one plane.

[0219] The insulating layer 526 is provided on one surface of the substrate 524 with the colored layer 525 sandwiched therebetween.

[0220] The insulating layer 527 is provided between the insulating layer 526 and the conductive layer 523 .

[0221] Furthermore, each component of the light emitting device described with reference to FIGS. 9 and 10 will be described.

[0222] The substrate 500 and the substrate 524 may be, for example, a glass substrate or a plastic substrate. It is to be noted that the substrate 500 and the substrate 524 do not necessarily have to be provided.

[0223] As the conductive layers 511a to 511h, for example, the conductive layer 401_A shown in FIG. A layer (single layer or laminate) of material applicable to the present invention can be used.

[0224] The insulating layer 512 may be, for example, a layer of a material applicable to the insulating layer 402_A shown in FIG. (Single layer or laminated layer) can be used.

[0225] As the semiconductor layers 513a to 513h, for example, the semiconductor layer 40 shown in FIG. A layer of material applicable to 3_A can be used.

[0226] As the conductive layers 515a to 515l, for example, the conductive layers 405a to 405l shown in FIG. A layer (single layer or multilayer) of material applicable to A and conductive layer 405b_A can be used. .

[0227] The insulating layer 516 may be, for example, a layer (single layer) of a material applicable to the insulating layer 406 shown in FIG. A layer or laminate may be used.

[0228] The conductive layers 517a and 517b are, for example, the conductive layers 511a to 511h. A layer (single layer or laminate) of material applicable to the present invention can be used.

[0229] The insulating layer 518 may be, for example, a layer (single layer or laminate) of a material that can be used for the insulating layer 512. There can be.

[0230] The conductive layer 519 is, for example, a layer of a material applicable to the conductive layers 511a to 511h. (Single layer or laminated layer) can be used.

[0231] The insulating layer 521 can be, for example, an organic insulating layer or an inorganic insulating layer.

[0232] The light-emitting layer 522 is a layer that emits light of a specific color. For example, a light-emitting layer using a light-emitting material that emits light of a specific color can be used. The light-emitting layer 522 is constructed by stacking light-emitting layers that emit light of different colors. The light-emitting material may be an electroluminescent material such as a fluorescent material or a phosphorescent material. Materials that contain multiple electroluminescent materials can also be used. For example, a layer of fluorescent material that emits blue light, a layer of fluorescent material that emits orange light, a layer of a first phosphorescent material that emits light exhibiting a color orange; and a layer of a second phosphorescent material that emits light exhibiting a color orange. The light-emitting layer 522 that emits white light may be formed by stacking these layers. The electroluminescent material may be an organic electroluminescent material or an inorganic electroluminescent material. In addition to the light-emitting layer, a hole-injection layer, for example, A light-emitting layer is formed by providing one or more of a hole transport layer, an electron transport layer, and an electron injection layer. This is also fine.

[0233] The conductive layer 523 is, for example, a layer of a material applicable to the conductive layers 511a to 511h. Among these, a layer (single layer or laminate) of a light-transmitting material can be used.

[0234] The coloring layer 525 may be a layer that emits light having a wavelength of red, light having a wavelength of green, or light having a wavelength of blue. A layer that transmits light having a wavelength of 100 nm and contains a dye or pigment can be used. 525, which transmits light with a color of cyan, magenta, or yellow and is dyed or pigmented For example, the color layer 525 may be formed by, for example, a photolithography method or a printing method. The ink jet method, the electrodeposition method, the electrophotography method, or the like is used for the formation of the ink jet recording layer. For example, By using the inkjet method, it is possible to manufacture at room temperature, in a low vacuum, or on a large substrate. In addition, since it can be manufactured without using a resist mask, the manufacturing cost and manufacturing The number of steps can be reduced.

[0235] The insulating layer 526 may be, for example, a layer (single layer or laminate) of a material that can be used for the insulating layer 512. Note that the insulating layer 526 is not necessarily provided, but it is possible to provide the insulating layer 526. By providing the colored layer 525, intrusion of impurities from the colored layer 525 into the light-emitting element can be suppressed.

[0236] The insulating layer 527 may be, for example, a layer (single layer or laminate) of a material applicable to the insulating layer 512. A layer of a resin material may be used.

[0237] As described with reference to FIGS. 9 and 10, in one example of the light emitting device according to the present embodiment, A light emitting element that emits light of a certain color and a light emitting element that emits light of a certain wavelength A colored layer that transmits light having a different color is provided. Since color images can be displayed without forming multiple light-emitting elements, the manufacturing process is simplified and the yield is improved. For example, a light-emitting device can be fabricated without using a metal mask. This makes the manufacturing process easier, and also improves the contrast of the image.

[0238] (Embodiment 6) In this embodiment, an example of an electronic device will be described.

[0239] A configuration example of the electronic device in this embodiment is shown in FIG. 11(A) to 11(C) and 12 show the configuration of the present embodiment. 1 is a schematic diagram for explaining a configuration example of an electronic device in

[0240] The electronic device shown in FIG. 11(A) is an example of a portable information terminal. The terminal includes a housing 1001a and a display unit 1002a provided in the housing 1001a. .

[0241] A connection terminal for connecting to an external device is provided on a side surface 1003a of the housing 1001a. One or more of the buttons for operating the portable information terminal shown in (A) may be provided. stomach.

[0242] The portable information terminal shown in FIG. 11A includes a CPU and a main memory in a housing 1001a. an interface for transmitting and receiving signals between an external device and the CPU and main memory; An antenna for transmitting and receiving signals to and from external devices is provided. There may be one or more integrated circuits having a specific functionality.

[0243] The portable information terminal shown in FIG. 11(A) is, for example, a telephone, an electronic book, a personal computer, etc. The device has the functions of one or more of a game machine and a game controller.

[0244] The electronic device shown in FIG. 11(B) is an example of a stationary information terminal. The information terminal includes a housing 1001b and a display unit 1002b provided in the housing 1001b. Prepare.

[0245] The display unit 1002b may be provided on the deck portion 1008 of the housing 1001b. do.

[0246] The stationary information terminal shown in FIG. 11B has a CPU and a main An interface that transmits and receives signals between memory, external devices, the CPU, and main memory In addition, the housing 1001c includes one or more integrated circuits having a specific function. In addition, the stationary information terminal shown in FIG. 11(B) may be provided with a function for transmitting and receiving signals to and from the outside. An antenna may be provided to perform the same.

[0247] Furthermore, in the stationary information terminal shown in FIG. 11(B), One or more of a ticket output unit for outputting tickets, a coin input unit, and a bill input unit may be provided. .

[0248] The stationary information terminal shown in FIG. 11(B) is, for example, an automated teller machine, a device for ordering tickets, etc. Functions as an information and communication terminal (also called a multimedia station) for playing games or as a gaming machine has.

[0249] FIG. 11C is an example of a stationary information terminal. The stationary information terminal shown in FIG. 11C is a housing. The device includes a body 1001c and a display unit 1002c provided in the housing 1001c. A support stand may be provided to support the housing 1001c.

[0250] The side surface 1003c of the housing 1001c has a connection terminal for connecting to an external device. One or more of the buttons for operating the stationary information terminal shown in (C) may be provided. stomach.

[0251] The stationary information terminal shown in FIG. 11C has a CPU and a main An interface that transmits and receives signals between memory, external devices, the CPU, and main memory In addition, an integrated circuit having a specific function may be installed in the housing 1001c. Alternatively, a plurality of the terminals may be provided. An antenna for receiving may be provided.

[0252] The stationary information terminal shown in FIG. 11(C) is, for example, a digital photo frame, an output monitor, or has the function of a television device.

[0253] For example, the configuration of the light emitting device according to the above embodiment can be used for the display unit of an electronic device, For example, the display units 1002a to 1002c shown in FIGS. The light emitting device in the above-mentioned second embodiment can be used.

[0254] Furthermore, the electronic device shown in FIG. 12 is an example of a folding information terminal, and FIG. 12(A) shows an external FIG. 12(A) is a schematic view, and FIG. 12(B) is a block diagram.

[0255] The electronic device shown in FIG. 12 includes a housing 6000a and a housing 6000b as shown in FIG. 12(A). b, a panel 6001a, a panel 6001b, a shaft portion 6002, and a button 6003, The electronic device shown in FIG. As shown in FIG. 12B, the device includes a power supply unit 6101, a wireless communication unit 6102, and a calculation unit 6103. 103, an audio section 6104, and a panel section 6105.

[0256] The panel 6001a is provided in a housing 6000a.

[0257] The panel 6001b is provided on the housing 6000b. The housing 6000b also includes a shaft portion 60 02 connects to housing 6000a.

[0258] The panel 6001a and the panel 6001b function as display panels. For example, Different images or a series of images are displayed on the panels 6001a and 6001b. This may be allowed.

[0259] The light emitting device in the above-mentioned embodiment 2 is used for the panel 6001a and the panel 6001b. There can be.

[0260] In addition, one or both of the panels 6001a and 6001b may function as a touch panel. In this case, for example, one of the panel 6001a and the panel 6001b or A keyboard image is displayed on both devices, and a finger or other object touches the keyboard image. In addition, a display panel and a touch panel may be laminated to form a panel 60. The display circuit and the light detector may be configured as a display circuit or a light detector. Using an input / output panel equipped with an output circuit, one of the panels 6001a and 6001b or Both may be configured.

[0261] In the electronic device shown in FIG. 12, since the shaft portion 6002 is provided, for example, the housing 6000a or the housing 6 6000b is moved to overlap the housing 6000a with the housing 6000b, and the electronic device is folded. This can be done.

[0262] The button 6003 is provided on the housing 6000b. 3 may be provided. In addition, multiple buttons 6003 may be provided on the housings 6000a and 6000b. For example, a button 6003 that is a power button may be provided. Thus, by pressing the button 6003, it is possible to control whether or not the electronic device is turned on.

[0263] The connection terminal 6004 is provided on the housing 6000a. 6000a and 6000b may be provided. For example, the personal computer 6001 may be connected to the connection terminal 6004. By connecting a personal computer to an electronic device, the electronic device can The contents of the stored data may be rewritten.

[0264] The recording medium insertion section 6005 is provided in the housing 6000a. A medium insertion section 6005 may be provided. In addition, a plurality of recording medium insertion sections 6005 may be provided in the housing 600. For example, the card may be inserted into the recording medium insertion section. By inserting the card-type recording medium, data can be read from the card-type recording medium to the electronic device. Alternatively, data in the electronic device can be written to the card-type recording medium.

[0265] The power supply unit 6101 has a function of controlling the supply of power for operating the electronic device. For example, a power supply unit 6101, a wireless communication unit 6102, a calculation unit 6103, an audio unit 6104, Power is supplied to the panel unit 6105. The power supply unit 6101 includes, for example, a power storage device. The power storage device is provided inside one or both of the housing 6000a and the housing 6000b. In addition, a power supply circuit for generating a power supply voltage for operating the electronic device is provided in the power supply unit 6101. At this time, the power supply voltage in the power supply circuit may be increased by using the power supplied from the power storage device. The power supply unit 6101 may be connected to a commercial power supply.

[0266] The wireless communication unit 6102 has a function of transmitting and receiving radio waves. For example, The transmitter includes an antenna, a demodulation circuit, a modulation circuit, etc. The wireless communication unit 6102 exchanges data with the outside using the transmission and reception of the An antenna may also be provided.

[0267] The calculation unit 6103 includes, for example, a wireless communication unit 6102, a voice unit 6104, and a panel unit 6105. For example, the calculation unit 6103 has a function of performing calculation processing according to a command signal input from The CPU, logic circuit, memory circuit, and the like are provided.

[0268] The audio unit 6104 has a function of controlling the input and output of sound, which is audio data. The unit 6104 includes a speaker and a microphone.

[0269] The power supply unit 6101, the wireless communication unit 6102, the calculation unit 6103, and the audio unit 6104 are, for example, It is provided inside one or both of the housings 6000a and 6000b.

[0270] The panel section 6105 includes a panel 6001a (also called panel A) and a panel 6001b (also called panel B). The panel section 6105 has a function of controlling the operation of the panel 60. A driving circuit for controlling the driving of the panel 6001a and the panel 6001b is provided. It may also control the operation in panel 6001b.

[0271] In addition, a power supply unit 6101, a wireless communication unit 6102, a calculation unit 6103, an audio unit 6104, and A control circuit may be provided in one or more of the panels 6105 to control the operation. In addition, a control circuit is provided in the calculation unit 6103, and the control circuit of the calculation unit 6103 controls the power supply unit 6 101, a wireless communication unit 6102, an audio unit 6104, and one or more of a panel unit 6105 The operation may be controlled.

[0272] In addition, the power supply unit 6101, the wireless communication unit 6102, the audio unit 6104, and the panel unit 6105 One or more memory circuits are provided, and data required for operation is stored in the memory circuits. This can increase the operation speed.

[0273] The electronic device shown in FIG. 12 can receive power from a commercial power source and can also store electricity. It is also possible to use the power stored in the device. Even if power cannot be supplied from the power source, the storage device can be used as a power source to The device can be driven.

[0274] By adopting the configuration shown in FIG. 12, the electronic device shown in FIG. 12 can be used as, for example, a telephone, an electronic book, , a personal computer, and a gaming machine. do.

[0275] The above is a description of the example of the electronic device according to this embodiment.

[0276] As described with reference to FIGS. 11 and 12, an example of the electronic device according to the present embodiment is The configuration includes a panel section using the configuration of the light emitting device according to the embodiment.

[0277] In addition, in one example of the electronic device according to the present embodiment, a power supply voltage is controlled in accordance with the illuminance incident on the housing. and an operation unit for operating the electronic device. For example, by providing a photoelectric conversion unit, an external power source is not required. The electronic device can be used for a long time even in places where there is no electricity. [Explanation of symbols]

[0278] 111 Field effect transistor 112 Field-effect transistor 113 Field-effect transistor 114 Field-effect transistor 115 Field-effect transistor 116 Field-effect transistor 117 Field-effect transistor 118 Field-effect transistor 121 Capacitive element 122 Capacitive element 123 Capacitive element 140 Light emitting element 151 Wiring 152 Wiring 153 Wiring 154 Wiring 155 Wiring 156 Wiring 157 Wiring 158 Wiring 159 Wiring 160 Wiring 400_A Device formation layer 400_B Device formation layer 401_A Conductive layer 401_B Conductive layer 402_A Insulation layer 402_B Insulation layer 403_A Semiconductor layer 403_B Semiconductor layer 404a area 404b area 405a_A Conductive layer 405a_B Conductive layer 405b_A Conductive layer 405b_B Conductive layer 406 Insulating Layer 407 Insulating Layer 500 boards 511a conductive layer 511b Conductive layer 511c conductive layer 511d conductive layer 511e conductive layer 511f conductive layer 511g conductive layer 511h Conductive layer 512 Insulating layer 513a Semiconductor layer 513b Semiconductor layer 513c Semiconductor layer 513d Semiconductor layer 513e Semiconductor layer 513f Semiconductor layer 513g Semiconductor layer 513h Semiconductor layer 515a conductive layer 515b Conductive layer 515c conductive layer 515d conductive layer 515e Conductive layer 515f conductive layer 515g conductive layer 515h conductive layer 515i conductive layer 515j conductive layer 515k conductive layer 515l conductive layer 516 Insulating Layer 517a conductive layer 517b Conductive layer 518 Insulating layer 519 Conductive Layer 521 Insulating layer 522 Light-emitting layer 523 Conductive Layer 524 Substrate 525 Colored layer 526 Insulating Layer 527 Insulating Layer 900 Light emitting part 901 Drive circuit 902 Drive circuit 910 Light emitting circuit 1001a Case 1001b Case 1001c Case 1002a Display section 1002b Display section 1002c Display section 1003a side 1003b Side 1003c side 1008 Deck section 6000a Case 6000b case 6001a Panel 6001b Panel 6002 Shaft 6003 Button 6004 Connection terminal 6005 Recording medium insertion section 6010 finger 6101 Power supply section 6102 Wireless Communication Department 6103 Arithmetic unit 6104 Audio section 6105 Panel section

Claims

1. A pixel includes first to fifth transistors, a light-emitting element, and first to third wirings, the first transistor has a first gate electrode and a second gate electrode; one of a source and a drain of the second transistor is electrically connected to the first wiring to which a data signal is supplied; the other of the source and the drain of the second transistor is electrically connected to the first gate electrode; one of a source and a drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element; the other of the source and the drain of the third transistor is electrically connected to the second wiring to which a first potential is supplied; one of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the fourth transistor is electrically connected to the third wiring; one of a source and a drain of the fifth transistor is electrically connected to the second gate electrode; the fifth transistor has a function of supplying a second potential to the second gate electrode; the first transistor has a function of controlling a current flowing between the third wiring and a pixel electrode of the light-emitting element in response to a potential of the data signal; The semiconductor device includes a first conductive film, a second conductive film, a third conductive film, and a the first conductive film has a function as the other of the source and the drain of the second transistor, and has a first region overlapping with the second conductive film via a first insulating film so as to form a capacitance; the third conductive film is electrically connected to the second gate electrode and has a second region overlapping the second conductive film via the first insulating film so as to form a capacitance; the second conductive film is electrically connected to a pixel electrode of the light-emitting element; The second region is larger than the first region. Light emitting device.

2. A pixel includes first to fifth transistors, a light-emitting element, and first to third wirings, the first transistor has a first gate electrode having a region disposed below a channel formation region of the first transistor, and a second gate electrode having a region disposed above a channel formation region of the first transistor; one of a source and a drain of the second transistor is electrically connected to the first wiring to which a data signal is supplied; the other of the source and the drain of the second transistor is electrically connected to the first gate electrode; one of a source and a drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element; the other of the source and the drain of the third transistor is electrically connected to the second wiring to which a first potential is supplied; one of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the fourth transistor is electrically connected to the third wiring; one of a source and a drain of the fifth transistor is electrically connected to the second gate electrode; the fifth transistor has a function of supplying a second potential to the second gate electrode; the first transistor has a function of controlling a current flowing between the third wiring and a pixel electrode of the light-emitting element in response to a potential of the data signal; The semiconductor device includes a first conductive film, a second conductive film, a third conductive film, and a the first conductive film has a function as the other of the source and the drain of the second transistor, and has a first region overlapping with the second conductive film via a first insulating film so as to form a capacitance; the third conductive film is electrically connected to the second gate electrode and has a second region overlapping the second conductive film via the first insulating film so as to form a capacitance; the second conductive film is electrically connected to a pixel electrode of the light-emitting element; The second region is larger than the first region. Light emitting device.

3. In claim 1 or 2, the first transistor to the fifth transistor have an n-channel type; Light emitting device.

4. In claim 3, the third wiring has a function of supplying a third potential to the pixel; the third potential is higher than the first potential; Light emitting device.

Images