Semiconductor device manufacturing method, die bonding film, and dicing / die bonding integrated adhesive sheet

Abstract

Disclosed is a die-bonding film for attaching a semiconductor chip to a support member on which the semiconductor chip is to be mounted. The elongation at break of the die-bonding film is 5% or less at -15°C. The die-bonding film also contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer. The sum of the contained amounts of the epoxy resin and the epoxy resin curing agent is not less than 10 mass% but less than 30 mass% with respect to the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer. The elongation at break of the die-bonding film is 5% or less at -15°C.

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a semiconductor device, a die bonding film, and a dicing / die bonding integrated adhesive sheet. [Background technology]

[0002] A semiconductor wafer backside bonding method is generally used as a manufacturing method of a semiconductor device. The semiconductor wafer backside bonding method is a method in which a die bonding film and a dicing tape are bonded to the backside of a semiconductor wafer, and then the semiconductor wafer, the die bonding film, and a part of the dicing tape are cut in a dicing process. For example, a method has been proposed in which a die bonding film is attached onto a dicing tape and then the dicing tape is bonded to a semiconductor wafer (see, for example, Patent Documents 1 to 4).

[0003] Incidentally, in order to increase the memory capacity per package, the number of stacked chips in a package has been increasing in recent years. Accordingly, it has been considered to make the thickness of semiconductor wafers thinner by a back grinding process or the like, and semiconductor wafers with a thickness of, for example, 30 μm or less have been manufactured. When the semiconductor wafer is made thinner, it becomes easier for the semiconductor wafer to crack during the dicing process, which may significantly reduce the manufacturing efficiency.

[0004] As a method for individualizing a relatively thin semiconductor wafer, for example, a method (stealth dicing) is known in which a laser beam is irradiated to the inside of the semiconductor wafer on the intended cutting line to form a modified layer, and then the outer periphery is expanded to individualize the semiconductor wafer (see, for example, Patent Document 5). Stealth dicing is effective in reducing defects such as chipping even when the semiconductor wafer is relatively thin, and is therefore expected to improve manufacturing efficiency.

[0005] As an integrated dicing / die bonding adhesive sheet for use in such stealth dicing, an expandable semiconductor wafer processing tape has been disclosed that is used to divide the adhesive layer along the chip by expanding (see, for example, Patent Document 6). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2002-226796 A [Patent Document 2] JP 2002-158276 A [Patent Document 3] Japanese Patent Application Publication No. 02-032181 [Patent Document 4] WO 04 / 109786 [Patent Document 5] JP 2003-338467 A [Patent Document 6] JP 2011-216508 A Summary of the Invention [Problem to be solved by the invention]

[0007] However, the die bonding film in a dicing / die bonding integrated adhesive sheet is usually flexible and stretchable, and therefore there is a problem in that the die bonding film is difficult to tear when the base film is expanded.

[0008] Therefore, a main object of the present invention is to provide a die bonding film having excellent fracturing properties and a method for manufacturing a semiconductor device using the same. [Means for solving the problem]

[0009] Conventionally, it has been known that in order to improve the cleavability of a dicing / die bonding integrated adhesive sheet, the increase in stress caused by thermal shrinkage of the base film of the dicing tape is adjusted (for example, see the above-mentioned Patent Document 6). Under these circumstances, the present inventors conducted extensive research and found that the breaking elongation of the die bonding film affects the cleavability, which led to the completion of the present invention.

[0010] One aspect of the present invention relates to a method for manufacturing a semiconductor device, which includes the steps of preparing a dicing-die bonding integrated adhesive sheet including, in this order, an adhesive layer made of a die bonding film having a breaking elongation of 5% or less at -15°C, a pressure-sensitive adhesive layer, and a base film, preparing a semiconductor wafer and forming a modified layer on the semiconductor wafer, attaching the adhesive layer surface of the dicing-die bonding integrated adhesive sheet to the semiconductor wafer, expanding the base film to separate the semiconductor wafer and the adhesive layer to produce a semiconductor chip with the adhesive layer, picking up the semiconductor chip with the adhesive layer from the pressure-sensitive adhesive layer, and adhering the semiconductor chip with the adhesive layer to a semiconductor chip mounting support substrate via the adhesive layer. The die bonding film contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and the total content of the epoxy resin and the epoxy resin curing agent is 10 mass% or more and less than 30 mass% based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer.

[0011] The die bonding film may be such that, after the die bonding film is thermocompression bonded to a wiring substrate and cured at 170° C. for 3 hours, the cured product of the die bonding film has a die shear strength at 250° C. of 0.7 MPa or more.

[0012] The die bonding film may further contain a silane coupling agent.

[0013] The silane coupling agent may be a silane coupling agent represented by the following general formula (1). [ka] [In general formula (1), R is an alkoxy group, and n is an integer of 1 to 3.]

[0014] The die bonding film may further contain an inorganic filler. The content of the inorganic filler may be 25 mass % or more based on the total amount of the die bonding film.

[0015] The content of the epoxy group-containing (meth)acrylic copolymer may be 60 mass % or less based on the total amount of the die bonding film.

[0016] Another aspect of the present invention relates to a die bonding film for bonding a semiconductor chip to a support member on which the semiconductor chip is mounted. The die bonding film has a breaking elongation of 5% or less at -15°C. The die bonding film contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and the total content of the epoxy resin and the epoxy resin curing agent is 10% by mass or more and less than 30% by mass based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer.

[0017] Another aspect of the present invention relates to a dicing / die bonding integrated adhesive sheet, which comprises an adhesive layer made of the above-mentioned die bonding film, a pressure-sensitive adhesive layer, and a base film, in this order. Effect of the Invention

[0018] According to the present invention, a die bonding film having excellent cleavability and a method for manufacturing a semiconductor device using the same are provided. The die bonding film according to some embodiments is also excellent in terms of die shear strength and embeddability. In addition, according to the present invention, a dicing / die bonding integrated adhesive sheet using such a die bonding film is provided. [Brief description of the drawings]

[0019] [Figure 1] FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device. [Diagram 2] FIG. 2 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 2(a), (b), (c), (d), and (e) are schematic cross-sectional views showing each step. [Diagram 3] FIG. 3 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 3(f), (g), (h), and (i) are schematic cross-sectional views showing each step. [Figure 4] FIG. 4 is a schematic cross-sectional view showing one embodiment of a dicing / die bonding integrated adhesive sheet. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] Hereinafter, an embodiment of the present invention will be described with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiment. In the following embodiment, the components (including steps, etc.) are not essential unless specifically stated. The size of the components in each figure is conceptual, and the relative relationship of the size between the components is not limited to that shown in each figure.

[0021] The same applies to the numerical values ​​and their ranges in this specification, and the present invention is not limited thereto. In this specification, the numerical range indicated using "~" indicates a range including the numerical values ​​before and after "~" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of another numerical range described in stages. In addition, in the numerical ranges described in this specification, the upper limit or lower limit of the numerical range may be replaced with a value shown in the examples.

[0022] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate, and the same applies to other similar expressions such as (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0023] [Semiconductor Devices] Fig. 1 is a schematic cross-sectional view showing one embodiment of a semiconductor device. In the semiconductor device 100 shown in Fig. 1, a semiconductor chip Wa is bonded to a semiconductor chip mounting support substrate 60 via an adhesive layer 30a (or a cured product of the adhesive layer 30a). The semiconductor chip Wa is electrically connected to the semiconductor chip mounting support substrate 60 by wire bonds 70. The semiconductor chip Wa is resin-sealed on a front surface 60a of the semiconductor chip mounting support substrate 60 by a resin sealing material 80. Solder balls 90 may be formed on the surface of the semiconductor chip mounting support substrate 60 opposite to the front surface 60a for electrical connection with an external substrate (motherboard).

[0024] As the semiconductor chip, for example, a general semiconductor chip such as an IC, an LSI, or a VLSI can be used.

[0025] As the support substrate for mounting a semiconductor chip, for example, a lead frame having a die pad, a ceramic substrate, an organic substrate, etc. can be used without being limited to the substrate material. As the ceramic substrate, for example, an alumina substrate, an aluminum nitride substrate, etc. can be mentioned. As the organic substrate, for example, an FR-4 substrate in which a glass cloth is impregnated with an epoxy resin, a BT substrate in which a bismaleimide-triazine resin is impregnated, a polyimide film substrate in which a polyimide film is used as a substrate, etc. can be mentioned.

[0026] The wiring provided on the support substrate for mounting a semiconductor chip may be either single-sided wiring, double-sided wiring, or multi-layer wiring, and may have through holes or non-through holes electrically connected to the support substrate for mounting a semiconductor chip, as necessary. Furthermore, when the wiring is disposed outside the semiconductor device, a protective resin layer may be provided.

[0027] [Manufacturing method for semiconductor device (semiconductor package)] 2 and 3 are schematic cross-sectional views for explaining one embodiment of a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device of one embodiment includes a step of preparing a dicing-die bonding integrated adhesive sheet having an adhesive layer made of a die bonding film having a breaking elongation of 5% or less at -15°C, a pressure-sensitive adhesive layer, and a base film in this order (dicing-die bonding integrated adhesive sheet preparation step), a step of preparing a semiconductor wafer and forming a modified layer on the semiconductor wafer (modified layer formation step), a step of attaching the adhesive layer surface of the dicing-die bonding integrated adhesive sheet to the semiconductor wafer (wafer lamination step), a step of expanding the base film to separate the semiconductor wafer and the adhesive layer, and preparing a semiconductor chip with an adhesive layer (dicing step), a step of picking up the semiconductor chip with the adhesive layer from the pressure-sensitive adhesive layer (pickup step), and a step of adhering the semiconductor chip with the adhesive layer to a support substrate via the adhesive layer (semiconductor chip adhering step).

[0028] <Dicing and die bonding integrated adhesive sheet preparation process> 4 is a schematic cross-sectional view showing one embodiment of a dicing / die bonding integrated adhesive sheet. The dicing / die bonding integrated adhesive sheet 1 comprises an adhesive layer 30, a pressure-sensitive adhesive layer 20, and a base film 10 in this order.

[0029] (adhesive layer) The die bonding film constituting the adhesive layer 30 is thermosetting, and can go through a semi-cured (B stage) state and then become a completely cured (C stage) state after a curing process.

[0030] The die bonding film has a breaking elongation of 5% or less at -15°C. By using such a die bonding film, the die bonding film tends to be easily broken when expanding. The breaking elongation of the die bonding film at -15°C may be 4.5% or less, 4% or less, or 3.5% or less. The breaking elongation of the die bonding film at -15°C may be, for example, 0.5% or more. In this specification, the breaking elongation at -15°C means a value measured by the method described in the examples.

[0031] The die bonding film contains an epoxy resin (hereinafter sometimes referred to as "component (A)"), an epoxy resin curing agent (hereinafter sometimes referred to as "component (B)"), and an epoxy group-containing (meth)acrylic copolymer (hereinafter sometimes referred to as "component (C)"). The die bonding film may further contain an inorganic filler (hereinafter sometimes referred to as "component (D)"), and may further contain a silane coupling agent (hereinafter sometimes referred to as "component (E)"). By adjusting the types and contents of these components, the breaking elongation of the die bonding film at -15°C can be adjusted.

[0032] Component (A): Epoxy resin Component (A) is a component that has the property of forming three-dimensional bonds between molecules and curing when heated or the like, and exhibits adhesive properties after curing. Component (A) can be used without particular restrictions as long as it has an epoxy group in the molecule. Component (A) may have two or more epoxy groups in the molecule.

[0033] Examples of the (A) component include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol A novolac type epoxy resins, bisphenol F novolac type epoxy resins, stilbene type epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenol methane type epoxy resins, biphenyl type epoxy resins, xylylene type epoxy resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, dicyclopentadiene type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatics such as anthracene. These may be used alone or in combination of two or more. Among these, the (A) component may be a cresol novolac type epoxy resin, a bisphenol type epoxy resin, or a dicyclopentadiene type epoxy resin from the viewpoint of the tackiness and flexibility of the film.

[0034] The epoxy equivalent of the (A) component is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 130 to 280 g / eq. When the epoxy equivalent of the (A) component is within such a range, the breaking elongation of the die bonding film tends to be adjusted to be lower. As a result, the finally obtained die bonding film tends to be more likely to have stress concentrated and to be easily torn when expanding.

[0035] The content of the (A) component may be 1 to 30% by mass based on the total amount of the die bonding film. When the content of the (A) component is 1% by mass or more based on the total amount of the die bonding film, the degree of crosslinking of the film increases, the bulk strength improves, and peeling from the substrate tends to be less likely to occur, and when the content is 30% by mass or less, the heat resistance history and the storage stability of the film tend to improve. The content of the (A) component may be 2% by mass or more, 3% by mass or more, or 5% by mass or more based on the total amount of the die bonding film, and may be 20% by mass or less, 15% by mass or less, or 10% by mass or less.

[0036] Component (B): Epoxy resin hardener The component (B) may be, for example, a phenolic resin that can be a curing agent for epoxy resins. Any phenolic resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenolic resin include novolac-type phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, etc. and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene, etc. with a compound having an aldehyde group such as formaldehyde under an acidic catalyst, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol aralkyl resins synthesized from phenols such as phenol and / or naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl, naphthol aralkyl resins, biphenyl aralkyl-type phenolic resins, and phenyl aralkyl-type phenolic resins. These may be used alone or in combination of two or more.

[0037] The hydroxyl equivalent of the phenol resin may be 40 to 300 g / eq, 70 to 290 g / eq, or 100 to 280 g / eq. When the hydroxyl equivalent of the phenol resin is 40 g / eq or more, the storage modulus of the film tends to be improved, and when it is 300 g / eq or less, defects due to the generation of foaming, outgassing, etc. can be prevented.

[0038] The ratio of the epoxy equivalent of the (A) component to the hydroxyl equivalent of the phenolic resin (epoxy equivalent of the (A) component / hydroxyl equivalent of the phenolic resin) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45 from the viewpoint of curability. When the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and more sufficient fluidity can be obtained.

[0039] The content of the (B) component may be 1 to 30% by mass based on the total amount of the die bonding film. When the content of the (B) component is 1% by mass or more based on the total amount of the die bonding film, the degree of crosslinking of the film increases, the bulk strength improves, and peeling from the substrate tends to be less likely to occur, and when the content is 30% by mass or less, the heat resistance history and storage stability of the film tend to improve. The content of the (B) component may be 2% by mass or more, 3% by mass or more, or 5% by mass or more based on the total amount of the die bonding film, and may be 20% by mass or less, 15% by mass or less, or 10% by mass or less.

[0040] The total content of the (A) component and the (B) component may be 25% by mass or less based on the total amount of the die bonding film. The total content of the (A) component and the (B) component may be 20% by mass or less, 18% by mass or less, or 15% by mass or less based on the total amount of the die bonding film. The total content of the (A) component and the (B) component may be 3% by mass or more, 5% by mass or more, or 7% by mass or more based on the total amount of the die bonding film.

[0041] Component (C): epoxy group-containing (meth)acrylic copolymer The (meth)acrylic copolymer means a polymer containing a structural unit derived from a (meth)acrylic acid ester. The epoxy group-containing (meth)acrylic copolymer is a polymer containing a structural unit derived from a (meth)acrylic acid ester having an epoxy group as a structural unit. The (meth)acrylic copolymer may be an acrylic rubber such as a copolymer of a (meth)acrylic acid ester and acrylonitrile. These may be used alone or in combination of two or more.

[0042] Commercially available products of component (C) include, for example, "SG-70L", "SG-708-6", "WS-023 EK30", "SG-280 EK23", "HTR-860P-3", "HTR-860P-3CSP", and "HTR-860P-3CSP-3DB" (all manufactured by Nagase ChemteX Corporation).

[0043] The glass transition temperature (Tg) of the (C) component may be -50 to 50°C or -30 to 20°C. When the Tg of the acrylic resin is -50°C or higher, the tackiness of the die bonding film tends to be lowered, leading to improved handleability. When the Tg of the acrylic resin is 50°C or lower, the fluidity of the adhesive composition when forming the die bonding film tends to be more sufficiently ensured. Here, the glass transition temperature (Tg) of the (C) component refers to a value measured using a DSC (differential scanning calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).

[0044] The weight average molecular weight (Mw) of the (C) component may be 50,000 to 1,200,000, 100,000 to 1,200,000, or 300,000 to 900,000. When the weight average molecular weight of the (C) component is 50,000 or more, the film-forming property tends to be more excellent. When the weight average molecular weight of the (C) component is 1,200,000 or less, the adhesive composition tends to have more excellent fluidity when forming a die bonding film. The weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve of standard polystyrene.

[0045] The measurement device, measurement conditions, etc. for the weight average molecular weight (Mw) of the component (C) are as follows: Pump: L-6000 (manufactured by Hitachi, Ltd.) Column: A column consisting of Gelpack GL-R440 (Hitachi Chemical Co., Ltd.), Gelpack GL-R450 (Hitachi Chemical Co., Ltd.), and Gelpack GL-R400M (Hitachi Chemical Co., Ltd.) (each 10.7 mm (diameter) × 300 mm) connected in this order. Eluent: tetrahydrofuran (hereinafter referred to as "THF") Sample: 120 mg of sample dissolved in 5 mL of THF Flow rate: 1.75mL / min

[0046] The total content of the (A) component and the (B) component is 10% by mass or more and less than 30% by mass based on the total amount of the (A), (B), and (C) components. When the total content of the (A) component and the (B) component is less than 30% by mass based on the total amount of the (A), (B), and (C) components, the breaking elongation of the die bonding film tends to be adjusted to a low value. As a result, the finally obtained die bonding film tends to be more likely to concentrate stress and to be easily torn during expansion. When the total content of the (A) component and the (B) component is 10% by mass or more based on the total amount of the (A), (B), and (C) components, the die bonding film is thermocompression bonded to a wiring board, and the die bonding film is cured at 170 ° C. for 3 hours, and the cured product tends to show a higher die shear strength. The total content of the (A) component and the (B) component may be 28 mass% or less, 25 mass% or less, 22 mass% or less, or 20 mass% or less, or may be 12 mass% or more, or 15 mass% or more, based on the total amount of the (A), (B), and (C) components.

[0047] The content of the (C) component may be more than 70% by mass and not more than 90% by mass based on the total amount of the (A), (B), and (C) components. If the content of the (C) component exceeds 70% by mass based on the total amount of the (A), (B), and (C) components, the die bonding film tends to be easily filled in the step of the substrate when it is thermocompressed and molded to the wiring substrate. If the content of the (C) component is 90% by mass or less based on the total amount of the (A), (B), and (C) components, the breaking elongation of the die bonding film tends to be adjusted to a low value. As a result, the finally obtained die bonding film tends to be more easily concentrated in stress and to be easily torn when expanding. The content of the (C) component, based on the total amount of the (A), (B), and (C) components, may be 72 mass% or more, 75 mass% or more, 78 mass% or more, or 80 mass% or more, and may be 88 mass% or less, or 85 mass% or less.

[0048] The content of the (C) component may be 60% by mass or less based on the total amount of the die bonding film. When the content of the (C) component is 60% by mass or less based on the total amount of the die bonding film, the breaking elongation of the die bonding film tends to be adjusted to a lower value. As a result, the finally obtained die bonding film tends to have more concentrated stress and to be easily torn during expansion. The content of the (C) component may be 58% by mass or less based on the total amount of the die bonding film. The content of the (C) component may be 35% by mass or more, 40% by mass or more, or 45% by mass or more based on the total amount of the die bonding film.

[0049] (D) Component: Inorganic filler Examples of the (D) component include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more. Of these, the (D) component may be silica.

[0050] When the average particle size of the (D) component is relatively large, the breaking elongation of the die bonding film tends to be adjusted to be lower. As a result, the finally obtained die bonding film tends to be more easily concentrated in stress and to be easily torn during expansion. The average particle size of the (D) component may be 0.1 to 1.0 μm. The average particle size of the (D) component may be 0.2 μm or more, 0.3 μm or more, or 0.4 μm or more, and may be 0.9 μm or less, 0.8 μm or less, or 0.7 μm or less. Here, the average particle size means a value calculated by conversion from the BET specific surface area.

[0051] The shape of component (D) may be spherical. Note that the term "spherical" includes the concept of a perfect sphere.

[0052] The (D) component may be surface-treated with a surface treatment agent from the viewpoint of compatibility of the surface with a solvent, other components, etc., and adhesive strength. Examples of the surface treatment agent include a silane coupling agent, etc. Examples of the functional group of the silane coupling agent include a vinyl group, a (meth)acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, and an ethoxy group.

[0053] The content of the (D) component may be 25% by mass or more based on the total amount of the die bonding film. When the content of the (D) component is 25% by mass or more based on the total amount of the die bonding film, the breaking elongation of the die bonding film tends to be adjusted to be lower. As a result, the finally obtained die bonding film tends to have more concentrated stress and to be easily torn during expansion. The content of the (D) component may be 26% by mass or more or 28% by mass or more based on the total amount of the die bonding film. The content of the (D) component may be 50% by mass or less, 45% by mass or less, or 40% by mass or less based on the total amount of the die bonding film. In addition, when the die bonding film contains the (D) component, the total content of the (A), (B), and (C) components may be 75 mass% or less, 74 mass% or less, or 72 mass% or less, based on the total amount of the die bonding film, and may be 50 mass% or more, 55 mass% or more, or 60 mass% or more.

[0054] The mass ratio of the (D) component to the (C) component (mass of the (D) component / mass of the (C) component) may be 0.30 or more, 0.35 or more, 0.40 or more, 0.45 or more, or 0.50 or more. When the mass ratio of the (D) component to the (C) component (mass of the (D) component / mass of the (C) component) is 0.30 or more, the breaking elongation of the die bonding film tends to be adjusted to be low. As a result, the finally obtained die bonding film tends to be more likely to concentrate stress and to be easily torn during expansion. The mass ratio of the (D) component to the (C) component (mass of the (D) component / mass of the (C) component) may be, for example, 0.80 or less, 0.70 or less, or 0.60 or less.

[0055] Component (E): Silane coupling agent By including the component (E) in the die bonding film, the interfacial bonding between different components tends to be improved. The component (E) may be a silane coupling agent represented by the following general formula (1).

[0056] [ka]

[0057] In the general formula (1), R is an alkoxy group such as a methoxy group or an ethoxy group, and n is an integer of 1 to 3.

[0058] Examples of the silane coupling agent represented by the general formula (1) include anilinopropyltrimethoxysilane, anilinopropyltriethoxysilane, anilinoethyltrimethoxysilane, anilinoethyltriethoxysilane, anilinomethyltrimethoxysilane, and anilinomethyltriethoxysilane.

[0059] The component (E) may contain a silane coupling agent other than the silane coupling agent represented by the general formula (1). Examples of such silane coupling agents include vinyltrichlorosilane, vinyltriethoxysilane, vinyltris(β-methoxyethoxy)silane, γ-methacryloxypropyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-amino ... -Aminopropyl methyl dimethoxysilane, γ-aminopropyl triethoxysilane, γ-aminopropyl methyl diethoxysilane, γ-(N,N-dimethyl) aminopropyl trimethoxysilane, γ-(N,N-diethyl) aminopropyl trimethoxysilane, γ-(N,N-dibutyl) aminopropyl trimethoxysilane, γ-(N-methyl) anilinopropyl trimethoxysilane, γ-(N-ethyl) anilinopropyl trimethoxysilane, γ-(N,N-dimethyl) aminopropyl triethoxysilane silane, γ-(N,N-diethyl)aminopropyltriethoxysilane, γ-(N,N-dibutyl)aminopropyltriethoxysilane, γ-(N-methyl)anilinopropyltriethoxysilane, γ-(N-ethyl)anilinopropyltriethoxysilane, γ-(N,N-dimethyl)aminopropylmethyldimethoxysilane, γ-(N,N-diethyl)aminopropylmethyldimethoxysilane, γ-(N,N-dibutyl)aminopropylmethyldimethoxysilane, γ-(N-methyl)anilinopropylmethyldimethoxysilane Examples of the silane include dimethyldimethoxysilane, γ-(N-ethyl)anilinopropylmethyldimethoxysilane, N-(trimethoxysilylpropyl)ethylenediamine, N-(dimethoxymethylsilylisopropyl)ethylenediamine, methyltrimethoxysilane, dimethyldimethoxysilane, methyltriethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane, vinyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, γ-ureidopropyltriethoxysilane, etc. These may be used alone or in combination of two or more.

[0060] The content of the component (E) may be 0.01 to 3.0% by mass based on the total amount of the die bonding film. When the content of the component (E) is in this range, there is a tendency that the interfacial bonding between different components can be further improved.

[0061] The mass ratio of the silane coupling agent represented by general formula (1) to the total amount of component (E) (mass of the silane coupling agent represented by general formula (1) / total mass of component (E)) may be 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, or 0.85 or more.

[0062] The die bonding film may further contain a curing accelerator (hereinafter, sometimes referred to as "component (F)").

[0063] (F) Component: Curing accelerator By containing the (F) component, the die bonding film tends to be able to achieve both adhesion and shorten the process time. Examples of the (F) component include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more. Among these, the (F) component may be imidazoles and their derivatives from the viewpoint of reactivity.

[0064] Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc. These may be used alone or in combination of two or more.

[0065] The content of the (F) component may be 0.001 to 1 mass % based on the total amount of the die bonding film. When the content of the (F) component is in this range, it tends to be possible to improve storage stability while achieving both adhesiveness and shortening of process time.

[0066] Other Ingredients The die bonding film may further contain other components such as an antioxidant, a rheology control agent, a leveling agent, etc. The content of these components may be 0.01 to 3 mass % based on the total amount of the die bonding film.

[0067] The die bonding film can be produced by forming an adhesive composition containing the above-mentioned components (A) to (C), and, if necessary, components (D) to (F) and other components, into a film. Such a die bonding film can be formed by applying the adhesive composition to a support film. The adhesive composition may be used as a varnish of the adhesive composition diluted with a solvent. When a varnish of the adhesive composition is used, the varnish of the adhesive composition is applied to a support film, and the solvent is removed by heating and drying, thereby forming the die bonding film.

[0068] The solvent is not particularly limited as long as it can dissolve components other than the component (D). Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These may be used alone or in combination of two or more. Among these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone from the viewpoints of solubility and boiling point. The solid component concentration in the varnish of the adhesive composition may be 10 to 80 mass % based on the total mass of the varnish of the adhesive composition.

[0069] The varnish of the adhesive composition can be prepared by mixing and kneading the components (A) to (C), and, if necessary, the components (D) to (F), other components, and a solvent. The order of mixing and kneading the components is not particularly limited and can be set appropriately. Mixing and kneading can be performed using a suitable combination of dispersing machines such as a normal stirrer, a grinding machine, a triple roll, a ball mill, and a bead mill. After preparing the varnish of the adhesive composition, air bubbles in the varnish may be removed by vacuum deaeration or the like.

[0070] The support film is not particularly limited, and examples thereof include films of polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, polyimide, etc. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.

[0071] The method for applying the varnish of the adhesive composition to the support film can be a known method, such as knife coating, roll coating, spray coating, gravure coating, bar coating, curtain coating, etc. The conditions for heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, and may be, for example, at 50 to 200° C. for 0.1 to 90 minutes.

[0072] The thickness of the die bonding film can be appropriately adjusted depending on the application. The thickness of the die bonding film may be 3 to 40 μm, 5 to 35 μm, or 7 to 30 μm.

[0073] The die bonding film may have a die shear strength of 0.7 MPa or more at 250 ° C in the cured product of the die bonding film after the die bonding film is thermocompression bonded to a wiring substrate and cured at 170 ° C for 3 hours. If the die shear strength at 250 ° C is 0.7 MPa or more, peeling occurs between the die bonding film and the substrate during substrate transportation, and foreign matter can be prevented from being mixed between the semiconductor wafer and the die bonding film during molding. The die shear strength at 250 ° C may be 0.8 MPa or more, 1.0 MPa or more, or 1.2 MPa or more. The upper limit of the die shear strength at 250 ° C is not particularly limited, but may be, for example, 3 MPa or less.

[0074] The resulting die bonding film can be used as the adhesive layer 30 as is.

[0075] (Adhesive layer and base film) The adhesive layer 20 and the base film 10 may be a laminate in which the adhesive layer 20 is provided on the base film 10, that is, a dicing tape.

[0076] The adhesive layer 20 may be a layer that is cured by high energy rays or heat (i.e., the adhesive strength can be controlled), a layer that is cured by high energy rays, or a layer that is cured by ultraviolet rays. The adhesive that constitutes the adhesive layer may be an adhesive that is generally used in the field of dicing tapes. The adhesive may be appropriately selected from adhesives whose adhesive strength to the adhesive layer 30 decreases when irradiated with high energy rays.

[0077] A substrate film generally used in the field of dicing tapes can be used as the substrate film 10. The substrate of the substrate film 10 is not particularly limited as long as it can be expanded in the dicing process, and examples thereof include polyolefins such as crystalline polypropylene, amorphous polypropylene, high density polyethylene, medium density polyethylene, low density polyethylene, very low density polyethylene, low density linear polyethylene, polybutene, and polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethane, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polycarbonates, polyimides, polyether ether ketones, polyimides, polyetherimides, polyamides, wholly aromatic polyamides, polyphenylsulfides, aramids (paper), glass, glass cloths, fluororesins, polyvinyl chloride, polyvinylidene chloride, cellulose-based resins, and silicone resins. Among these, the substrate of the substrate film 10 may be polypropylene, a polyethylene-polypropylene random copolymer, a polyethylene-polypropylene block copolymer, an ethylene-vinyl acetate copolymer, an ionomer resin, or an ethylene-(meth)acrylic acid copolymer, from the viewpoint of properties such as Young's modulus, stress relaxation property, and melting point.

[0078] By laminating the die bonding film and the pressure-sensitive adhesive layer of the dicing tape together, an integrated dicing and die bonding adhesive sheet 1 can be obtained, which comprises an adhesive layer 30, a pressure-sensitive adhesive layer 20, and a base film 10 in this order.

[0079] <Modified layer forming process> First, a semiconductor wafer W1 having a thickness H1 is prepared. The thickness H1 of the semiconductor wafer W1 on which the modified layer is formed may exceed 35 μm. Next, a protective film 2 is attached to one of the main surfaces of the semiconductor wafer W1 (see FIG. 2(a)). The surface to which the protective film 2 is attached may be the circuit surface of the semiconductor wafer W1. The protective film 2 may be a backgrind tape used for backgrinding of the semiconductor wafer. Next, a laser beam is irradiated into the inside of the semiconductor wafer W1 to form a modified layer 4 (see FIG. 2(b)), and backgrinding (backgrinding) and polishing (polishing) are performed on the opposite side (backside side) of the semiconductor wafer W1 to the surface on which the protective film 2 is attached, thereby producing a semiconductor wafer W2 having a modified layer 4 (see FIG. 2(c)). The thickness H2 of the obtained semiconductor wafer W2 may be 35 μm or less.

[0080] <Wafer lamination process> Next, the adhesive layer 30 of the dicing / die bonding integrated adhesive sheet 1 is placed in a predetermined device. Next, the dicing / die bonding integrated adhesive sheet 1 is attached to the main surface Ws of the semiconductor wafer W2 via the adhesive layer 30 (see FIG. 2(d)), and the protective film 2 of the semiconductor wafer W2 is peeled off (see FIG. 2(e)).

[0081] <Dicing process> Next, under cooling conditions, the base film 10 is expanded to divide the semiconductor wafer W2 at the modified layer 4. As a result, the semiconductor wafer W2 and the adhesive layer 30 are separated into individual pieces, and semiconductor chips with an adhesive layer are produced (see FIG. 3(f)). The base film 10 may be expanded under cooling conditions of 0° C. or lower.

[0082] <Ultraviolet irradiation process> The adhesive layer 20 may be irradiated with ultraviolet light, if necessary (see FIG. 3(g)). When the adhesive in the adhesive layer 20 is one that can be cured by ultraviolet light, the adhesive layer 20 is cured, and the adhesive strength between the adhesive layer 20 and the adhesive layer 30 can be reduced. For the ultraviolet light irradiation, ultraviolet light having a wavelength of 200 to 400 nm may be used. The ultraviolet light irradiation conditions are illuminance: 30 to 240 mW / cm. 2 The irradiation amount may be adjusted to 200 to 500 mJ.

[0083] <Pickup process> Next, the base film 10 is expanded to separate the diced semiconductor chips 50 with the adhesive layer from each other, while the needle 42 is pushed up from the base film 10 side, and the semiconductor chips 50 with the adhesive layer are sucked by the suction collet 44 to be picked up from the cured adhesive layer 20ac (see FIG. 3(h)). The semiconductor chips 50 with the adhesive layer have a semiconductor chip Wa and an adhesive layer 30a. The semiconductor chip Wa is obtained by dividing the semiconductor wafer W2 by dicing, and the adhesive layer 30a is obtained by dividing the adhesive layer 30 by dicing. The cured adhesive layer 20ac is obtained by dividing the cured adhesive layer by dicing. The cured adhesive layer 20ac may remain on the base film 10 when the semiconductor chips 50 with the adhesive layer are picked up. In the pick-up process, it is not necessarily necessary to expand, but by expanding, the pick-up property can be further improved.

[0084] <Semiconductor chip bonding process> Next, after picking up the semiconductor chip 50 with the adhesive layer, the semiconductor chip 50 with the adhesive layer is bonded to a support substrate 60 for mounting a semiconductor chip via the adhesive layer 30a by thermocompression bonding (see FIG. 3(i)). A plurality of semiconductor chips 50 with adhesive layers may be bonded to the support substrate 60 for mounting a semiconductor chip. The adhesive layer 30a may be cured by heating at, for example, 120 to 150° C. for 0.5 to 6 hours.

[0085] The semiconductor device shown in FIG. 1 can be manufactured by a manufacturing method that further includes the above-mentioned steps, a step of electrically connecting the semiconductor chip Wa and a support substrate 60 for mounting the semiconductor chip by wire bonds 70, and a step of resin-sealing the semiconductor chip Wa on the surface 60a of the support substrate 60 for mounting the semiconductor chip using a resin sealing material 80.

[0086] [Die bonding film] The die bonding film of one embodiment is for bonding a semiconductor chip to a support member on which the semiconductor chip is mounted. The die bonding film has a breaking elongation of 5% or less at -15°C. The die bonding film contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and the total content of the epoxy resin and the epoxy resin curing agent is 10% by mass or more and less than 30% by mass based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer. The components and contents contained in the die bonding film are the same as the components and contents exemplified in the adhesive layer described above. Therefore, a duplicated description will be omitted here.

[0087] [Dicing and die bonding integrated adhesive sheet] An integrated dicing / die bonding adhesive sheet in one embodiment comprises an adhesive layer made of the above-mentioned die bonding film, a pressure-sensitive adhesive layer, and a base film, in this order. EXAMPLES

[0088] The present invention will be described in more detail below with reference to examples, although the present invention is not limited to these examples.

[0089] <Preparation of die bonding film> A varnish of the adhesive composition was prepared according to the following procedure. The type and content (solid content) of each component are as shown in Table 1. First, (A) epoxy resin, (B) epoxy resin curing agent, (D) inorganic filler, and (E) silane coupling agent were mixed, and cyclohexanone was added thereto and stirred. Next, (C) epoxy group-containing (meth)acrylic copolymer and (F) curing accelerator were added, and the mixture was degassed under vacuum to obtain a varnish of the adhesive composition.

[0090] The components in Table 1 are as follows:

[0091] Component (A): Epoxy resin (A1) Cresol novolac epoxy resin (manufactured by Nippon Steel Chemical & Material Co., Ltd., product name "YDCN-700-10", epoxy equivalent: 210g / eq)

[0092] Component (B): Epoxy resin hardener (B1) Phenol aralkyl type phenolic resin (manufactured by Mitsui Chemicals, Inc., product name "Milex XLC-LL", softening point: 77°C, hydroxyl equivalent: 176g / eq) (B2) Biphenyl aralkyl type phenolic resin (manufactured by Nippon Kayaku Co., Ltd., product name "KAYAHARD GPH-103", softening point: 99 to 106°C, hydroxyl equivalent: 220 to 240g / eq)

[0093] Component (C): epoxy group-containing (meth)acrylic copolymer (C1) Acrylic rubber (manufactured by Nagase ChemteX Corporation, product name "HTR-860P-3", weight average molecular weight: 800,000, glass transition point: -13°C, butyl acrylate: ethyl acrylate: acrylonitrile: glycidyl methacrylate = 39.4: 29.3: 30.3: 3.0 (mass ratio))

[0094] (D) Component: Inorganic filler (D1) Silica filler (manufactured by Admatechs Co., Ltd., product name "SC2050", average particle size 0.5 μm, spherical silica including true spheres) (D2) Silica filler (manufactured by Admatechs Co., Ltd., product name "YA050", average particle size 0.05 μm, spherical silica including true spheres)

[0095] Component (E): Silane coupling agent (E1) γ-mercaptopropyltrimethoxysilane (manufactured by Momentive Performance Materials Japan, LLC, product name "A-189") (E2) 3-(N-phenyl)aminopropyltrimethoxysilane (anilinopropyltrimethoxysilane) (manufactured by Momentive Performance Materials Japan, LLC, product name "Y9669", a silane coupling agent in which, in general formula (1), R=all methoxy groups, n=3) (E3) Anilinomethyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name "X12-1191", a silane coupling agent in which, in general formula (1), all R are methoxy groups and n = 1)

[0096] (F) Component: Curing accelerator (F1) 1-cyanoethyl-2-phenylimidazole (manufactured by Shikoku Chemical Industry Co., Ltd., product name "Curezol 2PZ-CN")

[0097] Next, the obtained varnish of the adhesive composition was applied onto a support film of a 38 μm-thick polyethylene terephthalate (PET) film that had been subjected to a release treatment. The applied varnish was dried by heating at 90° C. for 5 minutes and at 130° C. for 5 minutes. In this manner, the die bonding films of Examples 1 to 3 and Comparative Examples 1 and 2, which were in a semi-cured (B stage) state and had the thicknesses shown in Table 1, were obtained on the support film.

[0098] <Measurement of breaking elongation at -15℃> The die bonding films of Examples 1 to 3 and Comparative Examples 1 and 2 were cut into strips with a width of 10 mm and a length of 100 mm to prepare samples for measuring elongation at break. After peeling off the support film of the sample for measurement, the sample was set on a Tensilon (manufactured by Shimadzu Corporation, product name "UTM-III-500") so that the distance between the jigs was 40 mm. The film was then cooled to -15°C, and the film length was measured while being pulled at a speed of 50 mm / min, and the film length at the time when the film broke was read. The elongation at break was calculated based on the following formula from the film length at the time when it broke and the initial film length (40 mm). The results are shown in Table 1. Breaking elongation (%) = (film length at break - initial film length (40 mm)) / initial film length (40 mm) x 100

[0099] <Preparation of integrated dicing and die bonding adhesive sheet> A dicing tape, which is a laminate of an adhesive layer and a base film, was prepared by applying an ultraviolet-curable adhesive (thickness: 10 μm) to a base film (thickness: 100 μm, diameter: 370 mm) containing an ionomer resin. Next, the die bonding films with support films (thickness: Table 1, diameter: 312 mm) of Examples 1 to 3 and Comparative Examples 1 and 2 were prepared and bonded together so that the ultraviolet-curable adhesive of the dicing tape was in contact with the die bonding film, to prepare the integrated dicing and die bonding adhesive sheets of Examples 1 to 3 and Comparative Examples 1 and 2, which were provided with an adhesive layer (die bonding film), an adhesive layer (ultraviolet-curable adhesive), and a base film in this order.

[0100] <Evaluation of breakability> A semiconductor wafer with a thickness of 50 μm and a diameter of 300 mm was prepared. A modified layer was formed on the semiconductor wafer using a stealth dicing laser saw (manufactured by Disco Corporation, device name "DFL7361") so as to obtain a semiconductor chip of 4 mm x 12 mm. Then, back grinding was performed using a back grinding device (manufactured by Disco Corporation, device name "DGP8761") to adjust the thickness of the semiconductor wafer to 25 μm. The support film of the dicing / die bonding integrated adhesive sheet of Examples 1 to 3 and Comparative Examples 1 and 2 was peeled off, and the adhesive layer (die bonding film) of the dicing / die bonding integrated adhesive sheet was laminated at 70 ° C. using a laminating device (manufactured by Disco Corporation, device name "DFM2800") to attach it to the semiconductor wafer adjusted to a thickness of 25 μm. The semiconductor wafer with the dicing and die bonding integrated adhesive sheet attached was fixed, and the dicing tape was expanded at -15°C using an expansion device (manufactured by Disco Corporation, device name "DDS2300"), and the adhesive layer and semiconductor wafer were singulated into semiconductor chips with an adhesive layer of 4 mm x 12 mm. The expansion conditions were adjusted so that the expansion speed was 100 mm / sec and the expansion amount was 8 mm. The singulated semiconductor chips were observed, and if the ratio of both the adhesive layer and the semiconductor wafer that were cut at the same time was 90% or more of the total, it was evaluated as having good breakability and was given an "A", and if the ratio was less than 90%, it was evaluated as having poor breakability and was given an "B". The results are shown in Table 1.

[0101] <Measurement of die shear strength> The die shear strength of the die bonding film was measured using the dicing / die bonding integrated adhesive sheets of Examples 1 to 3, which had excellent breaking properties. The semiconductor chips for measuring the die shear strength were produced as follows. A semiconductor wafer with a thickness of 400 μm was prepared, and the die bonding film side of the dicing / die bonding integrated adhesive sheets of Examples 1 to 3 was laminated to the semiconductor wafer at a stage temperature of 70° C. to produce a dicing sample. The obtained dicing sample was cut using a fully automatic dicer DFD-6361 (manufactured by Disco Corporation). Cutting was performed by a step cut method using two blades, and dicing blades ZH05-SD2000-N1-70-FF and ZH05-SD4000-N1-70-EE (both manufactured by Disco Corporation) were used. The cutting conditions were blade rotation speed: 4000 rpm, cutting speed: 50 mm / sec, and chip size: 5 mm×5 mm. The first cutting step was performed so that the semiconductor wafer was left with a thickness of about 200 μm, and the second cutting step was performed so that the dicing tape was cut with a thickness of about 20 μm. Next, the adhesive layer made of an ultraviolet-curing adhesive was irradiated with ultraviolet light to harden the adhesive layer. Next, the semiconductor chip to be picked up was picked up using a pickup collet. In the pick-up, five pins in total, one in the center and four at the four corners, were used to push up the chip. The pick-up conditions were a push-up speed of 20 mm / sec and a push-up height of 450 μm. In this way, the semiconductor chips with die-bonding films of Examples 1 to 3 were obtained. The obtained semiconductor chips with die bonding films of Examples 1 to 3 were pressure-bonded to a wiring board (organic board with solder resist, solder resist: Taiyo Holdings Co., Ltd., product name "AUS308", unevenness on board: about 6 μm) under conditions of temperature 120°C, pressure 0.1 MPa, and time 1.0 second, and cured at 170°C for 3 hours to prepare a sample of the cured product of the die bonding film, which was measured at a measurement temperature of 250°C using a universal bond tester (manufactured by Nordson Advanced Technology Co., Ltd.). The results are shown in Table 1.

[0102] <Evaluation of embeddability> The embeddability of the die bonding film was evaluated using the dicing-die bonding integrated adhesive sheets of Examples 1 to 3, which had excellent breaking properties. A semiconductor wafer with a thickness of 75 μm was prepared, and the chip size was adjusted to 7.5 mm × 7.5 mm, except that the semiconductor chips used in the measurement of die shear strength were prepared in the same manner as in the preparation of the semiconductor chips used in the measurement of die shear strength. A sample was prepared by attaching the semiconductor chips with the die bonding films of Examples 1 to 3 to a wiring board (organic board with solder resist, solder resist: Taiyo Holdings Co., Ltd., product name "AUS308", unevenness on the board: about 6 μm) under conditions of a temperature of 120 ° C., a pressure of 0.15 MPa, and a time of 1.0 second, and the sample was heated on a hot plate at 150 ° C. for 6 hours to be cured. The semiconductor chip was then encapsulated at 175°C, 6.9 MPa, and 120 seconds using a molding encapsulant (Hitachi Chemical Co., Ltd., product name "CEL-9700HF") to produce an evaluation package. The wiring board of the evaluation package was observed with an ultrasonic microscope to confirm the embeddability of the unevenness on the board. Boards with no voids in the unevenness on the board were rated "A" for good embeddability, and boards with voids were rated "B" for poor embeddability. The results are shown in Table 1.

[0103] [Table 1]

[0104] The die bonding films of Examples 1 to 3, which have a breaking elongation of 5% or less at -15°C, were superior in cleavage properties when expanded, compared with the die bonding films of Comparative Examples 1 and 2, which have a breaking elongation of more than 5% at -15°C. It was also found that the die bonding films of Examples 1 to 3 were superior in die shear strength and embeddability.

[0105] As described above, it was confirmed that the die bonding film of the present invention has excellent breaking properties. [Explanation of symbols]

[0106] 1... dicing / die bonding integrated adhesive sheet, 2... protective film, 4... modified layer, 10... base film, 20... adhesive layer, 20ac... cured adhesive layer, 30, 30a... adhesive layer, 42... needle, 44... suction collet, 50... semiconductor chip with adhesive layer, 70... wire bond, 60... support substrate for mounting semiconductor chip, 80... resin encapsulant, 90... solder ball, W1, W2... semiconductor wafer, H1... thickness of semiconductor wafer W1, H2... thickness of semiconductor wafer W2, 100... semiconductor device.

Claims

1. A step of preparing an integrated dicing and die bonding adhesive sheet including, in this order, an adhesive layer made of a die bonding film having a breaking elongation of 5% or less at -15°C, a pressure-sensitive adhesive layer, and a base film; providing a semiconductor wafer and forming a modified layer on the semiconductor wafer; attaching the adhesive layer surface of the dicing / die bonding integrated adhesive sheet to a semiconductor wafer; expanding the base film to separate the semiconductor wafer and the adhesive layer, thereby producing a semiconductor chip with an adhesive layer; picking up the semiconductor chip with the adhesive layer from the pressure-sensitive adhesive layer; a step of adhering the semiconductor chip with the adhesive layer to a support substrate for mounting a semiconductor chip via the adhesive layer; Equipped with the die bonding film contains an epoxy resin, an epoxy resin curing agent, an epoxy group-containing (meth)acrylic copolymer, an inorganic filler, and a curing accelerator; a total content of the epoxy resin and the epoxy resin curing agent is 10% by mass or more and less than 30% by mass based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer, The content of the inorganic filler is 25% by mass or more based on the total amount of the die bonding film, The content of the epoxy group-containing (meth)acrylic copolymer is 60 mass% or less based on the total amount of the die bonding film, a mass ratio of the inorganic filler to the epoxy group-containing (meth)acrylic copolymer is 0.30 or more and 0.60 or less.

2. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the die bonding film has a die shear strength of 0.7 MPa or more at 250°C in a cured product after the die bonding film is thermocompression bonded to a wiring substrate and cured at 170°C for 3 hours.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein the die bonding film further contains a silane coupling agent.

4. 4. The method for manufacturing a semiconductor device according to claim 3, wherein the silane coupling agent is a silane coupling agent represented by the following general formula (1): 【Chemistry 1】 [In general formula (1), R is an alkoxy group, and n is an integer of 1 to 3.]

5. A die bonding film for bonding a semiconductor chip to a support member on which the semiconductor chip is mounted, The elongation at break at -15°C is 5% or less, The composition contains an epoxy resin, an epoxy resin curing agent, an epoxy group-containing (meth)acrylic copolymer, an inorganic filler, and a curing accelerator, a total content of the epoxy resin and the epoxy resin curing agent is 10% by mass or more and less than 30% by mass based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer, The content of the inorganic filler is 25% by mass or more based on the total amount of the die bonding film, The content of the epoxy group-containing (meth)acrylic copolymer is 60 mass% or less based on the total amount of the die bonding film, A die bonding film, wherein a mass ratio of the inorganic filler to the epoxy group-containing (meth)acrylic copolymer is 0.30 or more and 0.60 or less.

6. The die bonding film according to claim 5, wherein the die bonding film is thermocompression bonded to a wiring substrate and cured at 170°C for 3 hours, and the cured product of the die bonding film has a die shear strength of 0.7 MPa or more at 250°C.

7. The die bonding film according to claim 5 or 6, further comprising a silane coupling agent.

8. The die bonding film according to claim 7 , wherein the silane coupling agent is a silane coupling agent represented by the following general formula (1): 【Chemistry 2】 [In general formula (1), R is an alkoxy group, and n is an integer of 1 to 3.]

9. An adhesive layer comprising the die bonding film according to any one of claims 5 to 8; An adhesive layer; A base film; A dicing / die bonding integrated adhesive sheet comprising the above in this order.

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