Lead frame, semiconductor device, and method of manufacturing lead frame

Abstract

To prevent unnecessary deformation and breakage caused by welding.SOLUTION: A lead frame has: a support part having one end part at which a first portion and a second portion thinner than the first portion are provided; a lead; and a heat radiation plate welded with the support part at the second portion. A method of manufacturing the lead frame includes the steps of: molding from a metal plate a frame member that has a support part having one end part at which a first portion and a second portion thinner than the first portion are provided, and a lead; and welding a heat radiation plate with the support part at the second portion.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a lead frame, a semiconductor device, and a method for manufacturing a lead frame. [Background technology]

[0002] In recent years, semiconductor devices have been known in which a semiconductor element, such as an integrated circuit (IC) chip, is mounted on a metal lead frame. That is, the semiconductor element is mounted on a planar die pad provided in the center of the lead frame, and the semiconductor element is connected to a plurality of leads provided around the die pad by wire bonding, for example. The semiconductor element mounted on the lead frame is then sealed with a resin, such as an epoxy resin, to form a semiconductor device.

[0003] Some of these lead frames are not provided with a die pad, but are constructed by joining a heat sink to a frame member having multiple leads. That is, a heat sink that is thicker than the frame member is joined, for example by welding, to the center of a frame member made of a thin metal plate, and a semiconductor element is mounted directly on this heat sink. This allows the heat generated by the semiconductor element to be efficiently dissipated with a simple structure. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 08-162590 [Patent Document 2] Japanese Patent Application Publication No. 10-144852 Summary of the Invention [Problem to be solved by the invention]

[0005] However, when a heat sink is joined to a frame member, there is a problem that the frame member or the heat sink may be deformed or damaged due to heat. That is, laser welding is sometimes used to join fine parts such as the frame member and the heat sink, but when the frame member and the heat sink are irradiated with a laser for a long time, heat is transferred to the periphery of the joint, which may cause thermal deformation. In particular, when laser welding is performed at the overlapping portion of the frame member and the heat sink, the laser may be irradiated until it penetrates the frame member made of a thin plate, which may cause deformation of the frame member or damage to the heat sink around the joint.

[0006] On the other hand, if the laser output is reduced or the laser irradiation time is shortened in order to prevent such deformation or damage, the welding between the frame member and the heat sink will be insufficient, resulting in a decrease in the quality of the lead frame and semiconductor device.

[0007] The disclosed technology has been made in consideration of these points, and aims to provide a lead frame, a semiconductor device, and a method for manufacturing a lead frame that can prevent unnecessary deformation and damage due to welding. [Means for solving the problem]

[0008] In one embodiment, the lead frame disclosed in the present application has a support portion at one end having a first portion and a second portion thinner than the first portion, a lead, and a heat sink welded to the support portion at the second portion. Effect of the Invention

[0009] According to one aspect of the lead frame, semiconductor device, and method of manufacturing a lead frame disclosed in the present application, it is possible to prevent unnecessary deformation and damage due to welding. [Brief description of the drawings]

[0010] [Figure 1]FIG. 1 is a diagram showing a structure of a lead frame according to an embodiment. [Diagram 2] FIG. 2 is a perspective view showing the structure of the welded portion. [Diagram 3] FIG. 3 is a diagram showing a specific example of a cross section of a welded portion. [Figure 4] FIG. 4 is a diagram showing a specific example of the cross-sectional shape of a welded portion. [Diagram 5] FIG. 5 is a flow diagram showing a method for manufacturing a lead frame. [Figure 6] FIG. 6 is a diagram showing a specific example of the molding process. [Figure 7] FIG. 7 is a diagram showing a specific example of the thin portion forming step. [Figure 8] FIG. 8 is a diagram showing a specific example of a plating process. [Figure 9] FIG. 9 is a diagram showing a specific example of a laser welding process. [Figure 10] FIG. 10 is a diagram showing a specific example of surface treatment of a welded portion. [Figure 11] FIG. 11 is a diagram showing a specific example of the structure of a semiconductor device. [Figure 12] FIG. 12 is a diagram showing a structure of a lead frame according to another embodiment. [Figure 13] FIG. 13 is a diagram showing another specific example of the structure of a semiconductor device. [Figure 14] FIG. 14 is a perspective view showing a modified example of the welded portion. [Figure 15] FIG. 15 is a perspective view showing another modified example of the welded portion. [Figure 16] FIG. 16 is a perspective view showing still another modified example of the welded portion. [Figure 17] FIG. 17 is a diagram showing a specific example of the structure of a semiconductor device. [Figure 18] FIG. 18 is a diagram showing the structure of a welded portion according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of a lead frame, a semiconductor device, and a method for manufacturing a lead frame disclosed in the present application will be described in detail with reference to the drawings. Note that the present invention is not limited to the embodiment.

[0012] Fig. 1 is a diagram showing a structure of a lead frame 100 according to an embodiment of the present invention, Fig. 1(a) is a plan view of the lead frame 100, and Fig. 1(b) is a cross-sectional view taken along line II in Fig. 1(a).

[0013] Lead frame 100 has a structure in which heat sink 150 is joined to a frame member having frame body 110, support bars 120, leads 130, and tie bars 140. The frame member is formed of a metal plate member such as copper or copper alloy having a thickness of, for example, about 0.1 to 0.25 mm. On the other hand, heat sink 150 is thicker than the plate member forming the frame member, and is a metal plate such as copper or copper alloy having a thickness of, for example, 1 mm or more.

[0014] The frame 110 defines the outer periphery of one lead frame 100, and supports the support bar 120 and the multiple leads 130 via the tie bars 140. When manufacturing the lead frame 100, the multiple lead frames 100 are manufactured as an assembly of lead frames connected via the frame 110. Then, after a semiconductor chip is mounted on the lead frame 100 and sealed with resin, the tie bars 140 between the multiple leads 130 and between the leads 130 and the support bar 120 are cut. Next, a portion including the support bar 120, the multiple leads 130, and the heat sink 150 is cut from the frame 110, thereby obtaining an individualized semiconductor device.

[0015] The support bars 120 are a pair of support parts extending from both ends in the longitudinal direction toward the center in the center of the short side of the lead frame 100, and support the heat sink 150 at their ends (hereinafter referred to as "center ends") located in the center of the lead frame 100. That is, one end of the pair of support bars 120 overlapping with the heat sink 150 is a welded part, and a mounting surface 150a of the heat sink 150 for mounting a semiconductor chip is welded to a thin part 121 formed in the welded part.

[0016] The thin portions 121 are portions that are thinner than other portions in the welded portion located at the center end of the support bar 120. In the example shown in Fig. 1, the thin portions 121 are formed at both ends of the welded portion in the width direction, and the thickness of the thin portions 121 is thinner than the central portion sandwiched between the thin portions 121.

[0017] FIG. 2 is a perspective view showing the structure of a welded portion 120a located at the end portion on the center side of the support bar 120. As shown in FIG.

[0018] The welded portion 120a is located within a range of about 1 mm from the tip of the center side of the support bar 120, and has a thin portion 121 and a remaining portion 122. The support bar 120 overlaps the heat sink 150 at the welded portion 120a, and is welded to the mounting surface 150a of the heat sink 150.

[0019] The thin portion 121 is formed by thinning both ends of the welded portion 120a in the width direction, and is a portion having a thinner plate thickness than the remaining portion 122. The thin portion 121 is formed by, for example, half etching or press crushing. As shown by the straight arrow in Fig. 2, a laser such as a fiber laser is irradiated onto the thin portion 121, and the support bar 120 and the heat sink 150 are welded at the welded portion 120a. The welding location of the thin portion 121 irradiated with the laser is not limited to one location, and may be multiple locations.

[0020] The remaining portion 122 is a portion of the welded portion 120a that remains without being thinned. The remaining portion 122 has the same plate thickness as the portion of the support bar 120 other than the welded portion 120a. In Fig. 2, the remaining portion 122 remains in the center of the welded portion 120a, and the thinned portions 121 are formed on both sides of the remaining portion 122, so that the cross-sectional shape of the welded portion 120a is convex.

[0021] Fig. 3 is a diagram showing a specific example of a cross section of the welded portion 120a. As shown in Fig. 3, the width of the support bar 120 is, for example, about 800 µm, and the plate thickness of the support bar 120 including the remaining portion 122 is about 200 µm.

[0022] The width of the remaining portion 122 in the center is, for example, about 200 μm, and the width of the thin portions 121 on both sides of the remaining portion 122 is, for example, about 300 μm. The thin portions 121 have a plate thickness of about 100 μm.

[0023] The cross-sectional shape of the welded portion 120a does not necessarily have to be convex. For example, as shown in Fig. 4(a), the boundary between the thin portion 121 and the remaining portion 122 may be a curved surface 123, or as shown in Fig. 4(b), the boundary between the thin portion 121 and the remaining portion 122 may be a sloping surface 124. Also, as shown in Fig. 4(c), the upper surface of the remaining portion 122 may be chamfered to form a sloping surface 125.

[0024] As in these cross-sectional shapes, the remaining portion 122 is located in the center of the welded portion 120a, and the thin portions 121 are formed on both sides of the remaining portion 122, so that the distance between the two thin portions 121 becomes relatively large. As a result, the distance between the welded portions irradiated with the laser becomes large, and the heat of the laser is not concentrated in a narrow range, so that the thermal deformation of the support bar 120 and the heat sink 150 can be suppressed.

[0025] 1, the leads 130 extend parallel to the support bar 120, and are terminals that electrically connect a semiconductor chip to an external component when the semiconductor chip is mounted on the lead frame 100. The leads 130 are shorter than the support bar 120, and the central end of the leads 130 does not overlap with the heat sink 150. A plating layer is formed on the surface of the central end of the leads 130 that is farther from the heat sink 150, and when a semiconductor chip is mounted on the lead frame 100, the semiconductor chip is connected to the plating layer by wire bonding.

[0026] The heat sink 150 is a copper plate-like member joined to the central end of the pair of support bars 120. The surface of the heat sink 150 joined to the support bar 120 is a mounting surface 150a on which a semiconductor chip is mounted. The heat sink 150 dissipates heat generated by the semiconductor chip mounted on the mounting surface 150a from the surface opposite the mounting surface 150a. Therefore, the surface opposite the mounting surface 150a is exposed from the mold resin even in a state in which the semiconductor chip is sealed with the mold resin.

[0027] Next, a method for manufacturing the lead frame 100 configured as above will be described with reference to a flow chart shown in FIG.

[0028] First, a frame member is formed by pressing or etching a metal plate of copper, copper alloy, or the like having a thickness of, for example, about 0.1 to 0.25 mm (step S101). Specifically, for example, as shown in FIG. 6, a support bar 120, a plurality of leads 130, and tie bars 140 are formed within an area surrounded by a frame body 110.

[0029] Then, thin portions 121 are formed at the central end portions of the support bars 120 (step S102). That is, as shown in Fig. 7, for example, thin portions 121 are formed at the central end portions of a pair of support bars 120 in each region surrounded by the frame body 110 by, for example, a press crushing process.

[0030] The formation of the thin portion 121 in step S102 may be performed simultaneously with the molding of the frame member in step S101. That is, for example, when the frame member is molded by etching a metal plate, both sides of the portions to be left as the support bar 120, the leads 130, and the tie bar 140 are masked with an etching mask, and the metal plate is immersed in an etching solution. At this time, the portion to be the thin portion 121 of the support bar 120 is masked with an etching mask only on one side, so that this portion is half-etched to form the thin portion 121. Also, for example, when the frame member is molded by press working, the thin portion 121 may be formed by crushing using a mold having a shape corresponding to the thin portion 121 of the support bar 120.

[0031] When the thin portion 121 is formed on the support bar 120, a plating layer is formed on the center end of the leads 130 (step S103). Specifically, as shown in Fig. 8, for example, a plating layer 130a is formed on the surface of the center end of each lead 130 opposite to the surface bonded to the heat sink 150. The plating layer 130a is formed by, for example, silver plating.

[0032] Through the steps up to this point, a frame member made of a thin copper plate is completed. Then, a heat sink 150 made of a metal such as copper or a copper alloy having a thickness of, for example, 1 mm or more is laser welded to this frame member (step S104). That is, for example, as shown in FIG. 9, the heat sink 150 is arranged so as to overlap the welded portion 120a of the support bar 120, and the thin portion 121 is irradiated with a laser, thereby welding the heat sink 150 to the support bar 120.

[0033] The laser used for laser welding may be, for example, a green laser or a fiber laser. Since the laser is irradiated to the thin portion 121 having a thin plate thickness, the heat from the laser melts the thin portion 121 quickly, and the support bar 120 and the heat sink 150 are welded together in a short time. This makes it possible to prevent the support bar 120 and the heat sink 150 from being deformed or damaged. Furthermore, since the support bar 120 and the heat sink 150 are not deformed or damaged, no gap is formed in the joint between the support bar 120 and the heat sink 150, and the joining property can be improved.

[0034] When laser welding is performed, the surface of the support bar 120 to which the laser is irradiated may be roughened in advance. That is, for example, as shown in Fig. 10, the surface of the support bar 120 including the thin portion 121 may have a large surface roughness by roughening copper plating or anodizing. By roughening the surface of the thin portion 121, reflection of the laser L irradiated to the thin portion 121 can be suppressed, and the laser absorption can be improved to perform efficient welding.

[0035] In this manner, the heat sink 150 is laser-welded to the thin portion 121 of the support bar 120 to form the lead frame 100. A semiconductor chip is mounted on the lead frame 100, and the semiconductor chip is sealed with a molding resin such as an epoxy resin. Then, the support bar 120 and the leads 130 are cut from the frame 110 to obtain a semiconductor device.

[0036] 11A and 11B are diagrams showing a specific example of the structure of a semiconductor device, in which Fig. 11A shows a cross section of the semiconductor device taken along a support bar 120, and Fig. 11B shows a cross section of the semiconductor device taken along a lead 130.

[0037] 11, the semiconductor chip 210 is mounted on the mounting surface 150a of the heat sink 150, and the semiconductor chip 210 and the leads 130 are connected by wire bonding. That is, the electrodes of the semiconductor chip 210 and the plating layer 130a of the leads 130 are connected by wires 230. Then, the semiconductor chip 210 is sealed with the molded resin 220. At this time, the surface of the heat sink 150 opposite to the mounting surface 150a is exposed from the lower surface of the molded resin 220, and the heat generated by the semiconductor chip 210 mounted on the mounting surface 150a can be efficiently dissipated.

[0038] The central end of the support bar 120 where the thin part 121 is formed is sealed with the semiconductor chip 210 by the molded resin 220, and the other end of the support bar 120 is bent into a shape similar to that of the lead 130, protruding from a side surface of the molded resin 220. The support bar 120 bent into a shape similar to that of the lead 130 in this manner may be used as a lead for ground wiring. By using the support bar 120 as a lead for ground wiring, the heat sink 150 can be set to a ground potential. On the other hand, the central end of the lead 130 connected to the semiconductor chip 210 in the plating layer 130a is sealed with the semiconductor chip 210 by the molded resin 220, and the other end of the lead 130 is bent into a shape similar to that of the lead 130, protruding from a side surface of the molded resin 220. The end of the lead 130 protruding from the molded resin 220 can be connected to another component, such as a wiring board. That is, the lead 130 is used, for example, as a lead for signal wiring.

[0039] As described above, according to this embodiment, a thin portion that is thinner than the other portions is formed in a frame member made of a metal plate, and a heat sink that is thicker than the frame member is joined by laser welding in the thin portion. Therefore, the heat from the laser melts the thin portion early and welds the frame member and the heat sink, so that the laser irradiation time can be shortened. As a result, the transfer of laser heat to the periphery of the thin portion can be suppressed, and unnecessary deformation and damage due to welding can be prevented.

[0040] In the above embodiment, the lead frame 100 is described as being used in a small outline package (SOP) type semiconductor device in which the leads 130 protrude in two directions from the mold resin 220. However, the lead frame 100 similar to that in the above embodiment can also be applied to a quad flat package (QFP) type semiconductor device in which the leads 130 protrude in four directions from the mold resin 220.

[0041] In addition, it is also possible to apply a lead frame 100 similar to that of the above embodiment to a semiconductor device in which the leads 130 do not protrude from the mold resin 220, such as a SON (Small Outline Non-leaded package) type or a QFN (Quad Flat Non-leaded package) type.

[0042] Fig. 12 is a diagram showing the structure of a lead frame 100 used in a SON type semiconductor device, Fig. 12(a) is a plan view of the lead frame 100, and Fig. 12(b) is a cross-sectional view taken along line II-II in Fig. 12(a).

[0043] 12, the support bar 120 and the leads 130 each extend from a short side of the frame 110 in the longitudinal direction of the lead frame 100. A thin portion 121 is formed at the central end of the support bar 120, and a heat sink 150 is welded to this thin portion 121. The heat sink 150 is welded to the support bar 120 at a mounting surface 150a on which a semiconductor chip is mounted. The support bar 120 and the leads 130 are bent so that the ends opposite the central end are positioned to become external terminals of the semiconductor device.

[0044] In this lead frame 100, the thin portion 121 is also formed at the center end of the support bar 120, so that when the heat sink 150 is laser welded to the support bar 120, the heat from the laser melts the thin portion early and the frame member and the heat sink are welded together, thereby shortening the laser irradiation time. As a result, the transfer of laser heat to the periphery of the thin portion can be suppressed, and unnecessary deformation and damage due to welding can be prevented.

[0045] 13A and 13B are diagrams showing a specific example of the structure of a SON type semiconductor device, in which (a) shows a cross section of the semiconductor device taken along a support bar 120, and (b) shows a cross section of the semiconductor device taken along a lead 130.

[0046] 13, the semiconductor chip 210 is mounted on the mounting surface 150a of the heat sink 150, and the semiconductor chip 210 and the leads 130 are connected by wire bonding. That is, the electrodes of the semiconductor chip 210 and the leads 130 are connected by wires 230. Then, the semiconductor chip 210 is sealed with the molded resin 220. At this time, the surface of the heat sink 150 opposite to the mounting surface 150a is exposed from the upper surface of the molded resin 220, and the heat generated by the semiconductor chip 210 mounted on the mounting surface 150a can be efficiently dissipated.

[0047] Furthermore, the support bar 120 and the leads 130 in which the thin portion 121 is formed are sealed together with the semiconductor chip 210 by the molded resin 220, and the ends of the support bar 120 and the leads 130 opposite to the central end are exposed from the side and bottom surface of the molded resin 220. By exposing the ends of the leads 130 from the molded resin 220, these ends become external terminals for connecting the semiconductor device to other components such as a wiring board.

[0048] In this manner, it is also possible to form a SON or QFN type semiconductor device in which the leads 130 do not protrude from the molding resin 220 using the lead frame 100 described above.

[0049] In the above embodiment, the remaining portion 122 is located in the center of the welded portion 120a of the support bar 120, and the thin portions 121 are formed on both sides of the remaining portion 122. However, the shape of the support bar 120 is not limited to this.

[0050] For example, as shown in Fig. 14(a), the thin portion 121 may be formed by cutting out the tip of the center end of the support bar 120. That is, in the example shown in Fig. 14(a), the tip of the center end of the support bar 120 is cut out over the entire width direction to form the thin portion 121. In this case, as shown by the straight arrow in Fig. 14(a), a laser may be irradiated to two places of one thin portion 121 to weld the support bar 120 and the heat sink 150. In this way, by adopting a simple structure in which the tip of the support bar 120 is cut out to form the thin portion 121, the lead frame 100 can be formed by simple processing.

[0051] 14(b), a remaining portion 122 may be left in the center of the welded portion 120a of the support bar 120, and thin portions 121 may be formed on three sides of the remaining portion 122. In this case, as shown by the straight arrows in FIG. 14(b), a laser may be irradiated to each of the thin portions 121 on three sides of the remaining portion 122, one at a time, to weld the support bar 120 and the heat sink 150. In this way, by forming the thin portions 121 on three sides of the remaining portion 122, the number of welding points is increased, and the joining reliability between the lead frame 100 and the heat sink 150 can be improved.

[0052] Furthermore, the thin portion 121 may be divided into a plurality of thin portions 121 by the remaining portion 122. That is, for example, as shown in Fig. 15(a), the thin portion 121 may be divided into three by leaving the remaining portion 122 in a T-shape in a plan view at the welded portion 120a, or the thin portion 121 may be divided into four by leaving the remaining portion 122 in a cross shape in a plan view at the welded portion 120a, as shown in Fig. 15(b). Also, as shown in Fig. 15(c), the thin portion 121 may be divided into five by leaving the remaining portion 122 in a lattice shape in a plan view at the welded portion 120a.

[0053] In these welded portions 120a, as shown by the straight arrows in the figure, a laser may be irradiated to each thin portion 121 at one location to weld the support bar 120 and the heat sink 150. In this way, by dividing the thin portions 121 into a plurality of portions, the number of welding locations can be increased, improving the joining reliability between the lead frame 100 and the heat sink 150. In addition, since the thin portions 121 are divided by the remaining portions 122, the welding locations to be irradiated with the laser are made clear, and the efficiency of the welding work can be improved.

[0054] Also, a remaining portion 122 may be left at the tip of the welded portion 120a. That is, for example, as shown in Fig. 16(a), a thin portion 121 may be formed behind the tip of the support bar 120, or as shown in Fig. 16(b), the thin portion 121 formed behind the tip of the support bar 120 may be divided into two by the remaining portion 122 in the center.

[0055] In these welded parts 120a, as shown by the straight arrows in the figure, a laser is irradiated onto the thin parts 121 to weld the support bar 120 and the heat sink 150. Furthermore, because a remaining part 122 with a flat surface remains at the tip of the support bar 120, wire bonding is possible to connect a wire 230 from an electrode of the semiconductor chip 210 to the remaining part 122.

[0056] Fig. 17 is a diagram showing a specific example of the structure of a semiconductor device having the welded portion 120a shown in Fig. 16(a). Fig. 17 shows a cross section of the semiconductor device at a position along the support bar 120. As shown in Fig. 17, the semiconductor chip 210 is mounted on the mounting surface 150a of the heat sink 150, and the semiconductor chip 210 and the support bar 120 are connected by wire bonding. That is, the electrodes of the semiconductor chip 210 and the remaining portion 122 of the support bar 120 are connected by the wire 230. Since the support bar 120 is connected to the semiconductor chip 210 in this way, it is possible to use the support bar 120 as a lead for ground wiring.

[0057] Meanwhile, the support bar 120 may be formed with the thin portion 121 and a through hole penetrating the remaining portion 122. When the through hole is formed, the through hole as well as the thin portion 121 can be used as a welding point.

[0058] Fig. 18 is a diagram showing the structure of a welded portion 120a where a through hole is formed, Fig. 18(a) is a perspective view of the welded portion 120a, and Fig. 18(b) is a diagram showing a cross section taken along line III-III in Fig. 18(a).

[0059] 18(a), a through hole 122a is formed in the remaining part 122 remaining in the center in the width direction of the support bar 120, penetrating the support bar 120 in the thickness direction. Then, as shown in Fig. 18(b), the through hole 122a has a truncated cone shape with a tapered cross section, and as shown by the straight arrow in the figure, in addition to the thin parts 121 on both sides of the remaining part 122, the inner wall surface of the through hole 122a also becomes a welding point, and the support bar 120 and the heat sink 150 are welded together.

[0060] Since the mounting surface 150a of the heat sink 150 is exposed at the bottom surface of the through hole 122a, in the laser welding at the through hole 122a, irradiating the inner wall surface of the through hole 122a with a laser for a short period of time is sufficient to join the support bar 120 and the heat sink 150. Therefore, by using the thin portion 121 and the inner wall surface of the through hole 122a as the welding points, the transfer of laser heat to the periphery of the welding point can be suppressed, and unnecessary deformation and damage due to welding can be prevented. [Explanation of symbols]

[0061] 100 Leadframe 110 Frame 120 Support bar 120a Welding 121 Thin part 122 Remaining part 122a Through hole 130 Leads 140 Tie Bar 150 Heat sink 210 Semiconductor Chip 220 Molding resin 230 Wire

Claims

1. A pair of support parts extending such that one end of each of the support parts faces each other, each of the support parts having a first portion and a second portion having a thickness thinner than that of the first portion; Lead and a heat sink welded to the pair of supports at the second portions of each of the pair of supports; A lead frame comprising:

2. Each of the pair of support portions is the first portion provided at the center in the width direction of the one end portion; the second portion formed on both sides of the first portion; 2. The lead frame of claim 1, further comprising:

3. Each of the pair of support portions is the first portion provided at the center in the width direction of the one end portion; the second portion provided on both sides of the first portion and at the tip of the one end; 2. The lead frame of claim 1, further comprising:

4. Each of the pair of support portions is The first portion; and a plurality of the second portions divided by the first portions; 2. The lead frame of claim 1, further comprising:

5. Each of the pair of support portions is The first portion provided at a tip of the one end portion; the second portion provided on the other end side of the support portion relative to the first portion; 2. The lead frame of claim 1, further comprising:

6. 2. The lead frame of claim 1, wherein the first portion has a through hole.

7. Further comprising a frame body, The pair of support parts are 2. The lead frame according to claim 1, wherein the ends of the frame are disposed at a center in a second direction perpendicular to the first direction of the frame and extend from both ends in the first direction toward a center thereof so that the ends of the frame face each other.

8. Each of the pair of support parts is a ground wiring lead having the one end and another end opposite to the one end, The pair of ground wiring leads are The first portion and the second portion are provided at the one end portion, The first portion and the other end portion are have the same thickness, The other end portion is 2. The lead frame according to claim 1, which is an external terminal.

9. A lead frame; A semiconductor element mounted on the lead frame; and a sealing resin that seals the semiconductor element. The lead frame is A pair of support parts extending such that one end of each of the pair of support parts faces each other, each of the pair of support parts being provided with a first portion and a second portion having a thickness smaller than that of the first portion; Lead and a heat sink welded to the pair of supports at the second portion of each of the pair of supports, The semiconductor device is A wire is mounted on one surface of the heat sink and connected to the lead. A semiconductor device comprising:

10. The heat sink is The surface opposite to the surface on which the semiconductor element is mounted is exposed from the sealing resin.

10. The semiconductor device according to claim 9.

11. The lead is A part of the insulating film is exposed from the sealing resin.

10. The semiconductor device according to claim 9.

12. Each of the pair of support parts is a ground wiring lead having the one end and another end opposite to the one end, The pair of ground wiring leads are The first portion and the second portion are provided at the one end portion, The first portion and the other end portion are have the same thickness, The other end portion is 10. The semiconductor device according to claim 9, wherein the terminal is an external terminal.

13. a step of forming a frame member having a pair of support parts extending from a metal plate such that one end of each of the pair of support parts faces each other, each of the pair of support parts having a first portion and a second portion that is thinner than the first portion at one end of the pair of support parts, and a lead; welding a heat sink to the pair of supports at the second portions of each of the pair of supports; 2. A method for manufacturing a lead frame comprising the steps of:

14. The molding step comprises: forming the frame member further having a frame body; The pair of support parts are 14. The method for manufacturing a lead frame according to claim 13, wherein the ends of the first and second electrodes are disposed at a center of the frame in a second direction perpendicular to the first direction and extend from both ends in the first direction toward the center so that the ends of the first and second electrodes face each other.

15. Each of the pair of support parts is a ground wiring lead having the one end and another end opposite to the one end, The pair of ground wiring leads are The first portion and the second portion are provided at the one end portion, The first portion and the other end portion are have the same thickness, The other end portion is 14. The method for manufacturing a lead frame according to claim 13, wherein the lead frame is an external terminal.

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