RF Reference Measurement Circuit for a Direct Drive System That Provides Power to Generate a Plasma in a Substrate Processing System - Patent application

Abstract

The substrate processing system includes a driver circuit, an RF reference measurement circuit, and a make-break connector. The driver circuit generates an RF drive signal at a first RF frequency. The RF reference measurement circuit includes an LC circuit having an input impedance and an output impedance. The output of the LC circuit is connected to an RF power meter and a dummy load. The make-break connector connects the driver circuit to the RF reference measurement circuit and one of the processing chamber loads including components of the substrate processing system. The output impedance of the driver circuit matches the impedance of the input impedance of the LC circuit. The output impedance of the driver circuit does not match the impedance of the RF power meter and the dummy load. The LC circuit matches the impedance of the driver circuit to the RF power meter and the dummy load.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 991,960, filed March 19, 2020. The above-referenced related applications are hereby incorporated by reference in their entireties.

[0002] The present disclosure relates to substrate processing systems, and more particularly to a radio frequency (RF) reference measurement circuit for measuring an RF reference generated by a direct drive system that provides RF power to a substrate processing system. [Background technology]

[0003] The description of the background art provided herein is intended to provide a general overview of the contents of the present disclosure, and the work of the inventors named herein is not admitted, expressly or impliedly, as prior art against the present disclosure, to the extent described in this Background section, as well as aspects of the description that may not be considered prior art at the time of filing.

[0004] Substrate processing systems are commonly used to etch thin films on substrates, such as semiconductor wafers. Etching typically involves either wet chemical etching or dry etching. Dry etching may be performed using a plasma generated by inductively coupled plasma (ICP). A magnetic field is generated by one or more induction coils positioned outside the processing chamber adjacent to a dielectric window. Process gases flowing within the processing chamber are ignited by the magnetic field to generate the plasma. Also, in some applications, an RF bias power may be provided to an electrode in the substrate support.

[0005] The frequency of the RF plasma power or the RF bias power can be varied to provide additional process control. Additionally, the magnitude or level of the RF plasma power or the RF bias power can be varied during processing to provide additional process control. Changes in the RF plasma power or level and / or changes in the RF bias power or level can cause changes in the impedance seen by the drive circuit. When an impedance mismatch occurs between the load and the drive circuit, power is reflected, which is inefficient. Summary of the Invention

[0006] The substrate processing system includes a drive circuit, an RF reference measurement circuit, and a make-break connector. The drive circuit is configured to generate an RF drive signal at a first RF frequency. The RF reference measurement circuit includes an LC circuit having an input impedance and an output impedance. The output of the LC circuit is configured to be connected to an RF power meter and a dummy load. The make-break connector is configured to connect the drive circuit to one of the RF reference measurement circuit and a process chamber load including components of the substrate processing system. The output impedance of the drive circuit is a function of the input impedance of the LC circuit. S The output impedance of the driver does not match the impedance of the RF power meter and the dummy load. The LC circuit output Impedance measured with an RF power meter and a dummy load Impedance of The arithmetic unit 100 is configured to match the

[0007] In other features, the RF reference measurement circuit includes a first conductor connected to the output of the LC circuit, and the RF power meter is connected to the first conductor.

[0008] In other features, the RF reference measurement circuit includes a second conductor connected to the output of the RF power meter, and the dummy load is connected to the second conductor.

[0009] In another feature, the output impedance of the driver circuit and the input impedance of the LC circuit are in the range of 0.1 Ω to 10 Ω.

[0010] In another feature, the output impedance of the driver circuit and the input impedance of the LC circuit are in the range of 0.5 Ω to 2 Ω.

[0011] In other features, the output impedance of the LC circuit and the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 20 Ω to 100 Ω.

[0012] In other features, the output impedance of the LC circuit and the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 45 Ω to 55 Ω.

[0013] In other features, the LC circuit includes a first connector connected to the make-break connector, an inductor having one end connected to the first connector, a first capacitor connected in series to an opposite end of the inductor, and a second capacitor connected in parallel between the opposite end of the inductor and the first capacitor.

[0014] In other features, the first capacitor includes one or more ceramic capacitors having a first terminal connected to the second capacitor and a second terminal connected to the second connector.

[0015] In another feature, the second conductor includes a coaxial cable.

[0016] In another feature, the second capacitor comprises one or more vacuum capacitors.

[0017] In other features, the input impedance of the LC circuit is in the range of 0.5 Ω to 2 Ω and the output impedance of the LC circuit is in the range of 45 Ω to 55 Ω.

[0018] In another feature, the first RF frequency is in the range of 1.8 MHz to 2.2 MHz.

[0019] In other features, the LC circuit includes a first connector connected to the make-break connector, an inductor having one end connected to the first connector, a first capacitor connected in series to an opposite end of the inductor, and a second capacitor connected in parallel to an opposite end of the first capacitor.

[0020] In another feature, the first capacitor and the second capacitor comprise one or more vacuum capacitors.

[0021] In another feature, the first RF frequency is in the range of 12.35 MHz to 13.65 MHz.

[0022] In other features, a make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from an opposite side of the bracket and connected to the first conductor, and a connector removably attached to the second conductor and configured to connect the second conductor to an RF reference measurement circuit and not to connect to a drive circuit. The connector is T-shaped and includes a body connected to the second conductor and a cylindrical portion extending from the body and including a cavity. The cavity in the cylindrical portion is configured to connect to the RF reference measurement circuit.

[0023] In other features, a make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from an opposite side of the bracket and connected to the first conductor, and a connector configured to removably attach to the second conductor and connect the second conductor to the drive circuit and not to the RF reference measurement circuit. The connector includes a body, a bore in the body, and a fastener extending through the bore to connect the body to the second conductor.

[0024] In other features, the make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from an opposite side of the bracket and connected to the first conductor, and a connector configured to removably attach to the second conductor and connect the second conductor to one of the RF reference measurement circuit and the driver circuit. The connector includes a T-shaped connector.

[0025] In other features, the T-shaped connector includes a first leg and a second leg including first and second cavities, respectively. The first leg and the second leg are slidably received over the second conductor. The T-shaped connector includes a third leg disposed transversely to the first leg and the second leg and including a cavity configured to connect to an RF reference measurement circuit.

[0026] In other features, the T-shaped connector includes a body including a bore, a fastener extending through the bore to connect the body to a second conductor, and a cylindrical portion extending from the body and including a cavity configured to connect to an RF reference measurement circuit.

[0027] In another aspect, the barrel has an axis and the fastener is connected transversely to the axis.

[0028] In another feature, the barrel has an axis and the fastener is connected in a direction parallel to the axis.

[0029] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0030] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0031] [Figure 1]FIG. 1 is a functional block diagram of an example substrate processing system including one or more RF direct drive circuits in accordance with the present disclosure.

[0032] [Figure 2A] FIG. 2A is a functional block diagram and electrical schematic diagram of an example RF direct drive circuit according to the present disclosure. [Figure 2B] FIG. 2B is a functional block diagram and electrical schematic diagram of an example RF direct drive circuit according to the present disclosure.

[0033] [Figure 3A] FIG. 3A is a functional block diagram of an example of an RF direct drive circuit connected to a load in accordance with the present disclosure.

[0034] [Figure 3B] FIG. 3B is a functional block diagram of an RF direct drive circuit connected to an RF reference measurement circuit in accordance with the present disclosure.

[0035] [Figure 4] FIG. 4 is a functional block diagram of an example RF direct drive circuit and first and second RF reference measurement circuits operating in first and second RF ranges in accordance with this disclosure.

[0036] [Diagram 5] FIG. 5 is an electrical schematic diagram of an example LC circuit for a first RF reference in accordance with the present disclosure.

[0037] [Figure 6] FIG. 6 is an electrical schematic diagram of an example LC circuit for a second RF reference in accordance with the present disclosure.

[0038] [Figure 7] FIG. 7 is a perspective view of an example direct drive system according to the present disclosure.

[0039] [Figure 8A] FIG. 8A is a perspective view of an example of a first RF reference measurement circuit for a direct drive system according to the present disclosure. [Figure 8B]FIG. 8B is a perspective view of an example of a first RF reference measurement circuit for a direct drive system according to the present disclosure.

[0040] [Figure 9A] FIG. 9A is a perspective view of an example of a second RF reference measurement circuit for a direct drive system according to the present disclosure. [Figure 9B] FIG. 9B is a perspective view of an example of a second RF reference measurement circuit for a direct drive system according to the present disclosure.

[0041] [Figure 10A] FIG. 10A is a perspective view of an example of the top of a make-break connector for a direct drive system according to the present disclosure. [Figure 10B] FIG. 10B is a perspective view of an example of the top of a make-break connector for a direct drive system according to the present disclosure.

[0042] [Figure 11] FIG. 11 is a perspective view of an example make-break connector for a direct drive system according to the present disclosure.

[0043] [Figure 12A] FIG. 12A is a perspective view of an example of the top of a make-break connector for a direct drive system according to the present disclosure. [Figure 12B] FIG. 12B is a perspective view of an example of the top of a make-break connector for a direct drive system according to the present disclosure.

[0044] [Figure 13] FIG. 13 is a perspective view of another example of the top of a make-break connector for a direct drive system according to the present disclosure.

[0045] [Figure 14] FIG. 14 is a perspective view of another example of the top of a make-break connector for a direct drive system according to the present disclosure.

[0046] In the drawings, reference numbers may be reused to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0047] In some applications, the RF frequency of the RF source power or RF bias power supplied to the ICP coil and / or electrodes in the substrate support is switched between two or more frequencies and / or two or more pulse levels. RF pulsing at multiple frequencies and / or multiple levels is shown and described in commonly assigned U.S. Patent No. 9,515,633, entitled "Transformer Coupled Capacitive Tuned Circuit with Fast Impedance Switching for Plasma Etch Chambers," which is incorporated herein by reference in its entirety.

[0048] In these systems, the impedance of the RF generator is matched to the load (such as the induction coil and plasma, or the electrode and plasma). However, the impedance of the load changes as the plasma conditions change, the pulse levels change, and / or due to a variety of other factors. When impedance mismatch occurs, power is reflected by the load, resulting in inefficiencies. Tuning circuits that use variable capacitors is difficult due to the amount of time required to change the capacitance value relative to the frequency change and / or the switching period between level changes.

[0049] To alleviate some of the aforementioned challenges, RF direct drive circuits with low output impedance can be used. In some examples, the impedance of the RF direct drive circuit is primarily resistive and has a relatively low resistance (e.g., about 1 Ω, etc.). For example, direct drive circuits and hybrid direct drive circuits are shown in commonly assigned U.S. Patent Application No. 16 / 007,481, entitled "Direct Drive RF Circuit for Substrate Processing System," filed June 13, 2018, which is incorporated herein by reference in its entirety. Further examples of direct drive circuits are shown and described in U.S. Patent Publication No. 2019 / 0007004, entitled "High Gain Resonant Amplifier for Resistive Output Impedance," published January 3, 2019, which is incorporated herein by reference in its entirety.

[0050] To ensure that the substrate processing system can operate within desired operating parameters (such as non-uniformity), the RF power or RF bias output by the direct drive system should be measured periodically (or on an event-by-event basis) and calibrated as necessary. However, the output of the direct drive circuit is difficult to measure because it has a relatively low impedance compared to the impedance of existing coaxial cables, RF power meters and / or dummy loads that are commercially available and / or otherwise already located in the fab room. Most existing coaxial cables, RF power meters and / or dummy loads have an impedance of approximately 50 Ω. The systems and methods described herein are used to measure one or more parameters of the RF power and / or RF bias signals generated by the RF direct drive system.

[0051] The systems and methods according to the present disclosure include a make-break connector disposed between a direct drive circuit and a process chamber load (e.g., a component of a process chamber and / or plasma). The make-break connector connects the direct drive circuit to the process chamber load or to an RF reference measurement circuit that includes a dummy load. The RF reference measurement circuit includes an LC circuit with an input impedance that matches the impedance of the direct drive circuit and an output impedance that matches the impedance of the coaxial cable, RF power meter, and dummy load. This allows measurements to be made using existing RF power meters, coaxial cables, and dummy loads, thereby reducing costs.

[0052] 1, an example of a substrate processing system 10 according to the present disclosure is shown. The substrate processing system 10 includes an RF drive circuit 12. The RF drive circuit 12 may include an RF source and a matching network or a direct drive circuit as described herein.

[0053] In some examples, a plenum 20 may be disposed between the coil 16 and the dielectric window 24 to control the temperature of the dielectric window 24 with hot and / or cold airflow. The dielectric window 24 is disposed along one side of a processing chamber 28. The processing chamber 28 further includes a substrate support (or pedestal) 32. The substrate support 32 may include an electrostatic chuck (ESC), a mechanical chuck, or other types of chucks. A process gas is supplied to the processing chamber 28, and a plasma 40 is generated within the processing chamber 28. The plasma 40 etches the exposed surface of the substrate 34.

[0054] An RF driver circuit 52 may be used to provide an RF bias to electrodes in the substrate support 32 during operation. The RF driver circuit 52 may include an RF source and a matching network or a direct drive circuit (as described herein). At least one of the RF driver circuits 12 and / or 52 includes an RF direct drive circuit.

[0055] A gas supply system 56 may be used to supply a process gas mixture to the processing chamber 28. The gas supply system 56 may include process gas and inert gas sources 57, a gas metering system 58, such as valves and mass flow controllers, and a manifold 59. A gas, such as air, may be used to cool the coil 16 and the dielectric window 24. A heater / cooler 64 may be used to heat / cool the substrate support 32 to a predetermined temperature. An exhaust system 65 includes valves 66 and pumps 67 to remove reactants from the processing chamber 28 by purging or evacuation. A controller 54 may be used to control the etching process. The controller 54 monitors system parameters and controls the supply of gas mixtures, plasma impingement, plasma maintenance and plasma extinction, removal of reactants, supply of cooling gases, etc.

[0056] 2A and 2B, an example of an RF direct drive circuit 200 for providing RF bias power or RF plasma power is shown. In FIG. 2A, the RF direct drive circuit 200 includes a clock 220 that operates at one or more selected RF frequencies. A clock signal output by the clock 220 is input to a gate drive circuit 222. In some examples, the gate drive circuit 222 includes an amplifier 244 and an inverting amplifier 246 having respective inputs connected to the clock 220.

[0057] The output of the gate drive circuit 222 is input to a half-bridge circuit 238. In some examples, the half-bridge circuit 238 includes a first switch 240 and a second switch 242. In some examples, the first switch 240 and the second switch 242 include metal oxide semiconductor field effect transistors (MOSFETs). The first switch 240 and the second switch 242 each include a control terminal and first and second terminals. The output of the amplifier 244 of the gate drive circuit 222 is input to the control terminal of the first switch 240. The output of the inverting amplifier 246 of the gate drive circuit 222 is input to the control terminal of the second switch 242.

[0058] The output node 230 is connected to a second terminal of a first switch 240 and a first terminal of a second switch 242. The first terminal of the first switch 240 is connected to a first DC power source 270. The second terminal of the second switch 242 is connected to a reference potential, such as ground.

[0059] The output node 230 is connected to a cathode 234 by an inductor 232. In some examples, a resistor R p and a capacitance in series, C p may be used to model the impedance seen by the RF direct drive circuit 200 (e.g., the plasma capacitance and resistance, the capacitance and resistance of an electrode (or another component) in the substrate support, and / or other stray or parasitic capacitance and resistance).

[0060] The RF direct drive circuit of FIG. 2B is designed to eliminate the DC bias by providing +V DC / 2 and -V DC 2A. In some examples, to obtain the same output RF power, both the first and second DC power supplies 270, 280 operate at half the voltage of the single DC power supply of FIG. 2A. In some examples, the first DC power supply 270 and the second DC power supply 280 operate at approximately the same magnitude and opposite polarity. As used herein, approximately the same refers to a difference in the magnitude of the DC voltage output by the first DC power supply 270 relative to the second DC power supply 280 being less than 20%, 5%, or 2%. The first DC power supply 270 is connected to a first terminal of the first switch 240. The second DC power supply 280 is connected to a second terminal of the second switch 242.

[0061] In some examples, the current sensor 282 and the voltage sensor 284 sense the current and voltage at the output node 230. The phase offset calculator 290 receives the sensed current and voltage signals and generates a phase offset signal that is output to the clock frequency adjuster 292. The clock frequency adjuster 292 generates a clock adjustment signal based on the phase offset signal. In other features, the clock frequency adjuster 292 increases the frequency of the clock 220 when the current leads the voltage and decreases the frequency of the clock 220 when the voltage leads the current.

[0062] 3A and 3B, the direct drive circuit 310 can be connected to a load 312, such as a component of a process chamber, or to an RF reference measurement circuit 314 that performs measurements to evaluate the operation of the direct drive circuit 310. In FIG. 3A, a make-break connector 316 is configured to connect the direct drive circuit 310 to the load 312 during a normal operating mode. The make-break connector 316 may include fasteners, conductors, and / or other hardware that are manually attached and / or removed to make and / or break the appropriate connection. While operating in the normal operating mode, the direct drive circuit 310 drives the load 312 as described above.

[0063] Periodically, or on a per event basis, the output of the direct drive circuit is tested to ensure that the process chamber is operating correctly. However, dummy loads, RF power meters, and coaxial cable connectors have much higher impedances that do not match the output impedance of the direct drive circuit.

[0064] 3B, make-break connector 316 is configured to connect direct drive circuit 310 to LC circuit 320 during an RF reference measurement mode. The output of LC circuit 320 is connected to an RF power meter 324. Conductor 326 connects RF power meter 324 to a dummy load 328. In some examples, conductor 326 includes a coaxial cable, although other conductors may be used.

[0065] The output impedance of the direct drive circuit 310 is not matched to the impedance of the conductor 326, the impedance of the RF power meter 324, and the impedance of the dummy load. In some examples, the output impedance of the direct drive circuit 310 is in the range of 0.1 ohms (Ω) to 5 Ω. In some examples, the output impedance of the direct drive circuit 310 is in the range of 0.5 ohms (Ω) to 2 Ω.

[0066] In some examples, the impedance of conductor 326 and RF power meter 324 is greater than the output impedance of direct drive circuit 310. For example, the impedance of conductor 326, RF power meter 324, and dummy load 328 may be in the range of 20 ohms (Ω) to 100 Ω. For example, the impedance of conductor 320, RF power meter 324, and dummy load 328 may be in the range of 45 ohms (Ω) to 55 Ω. For example, the impedance of conductor 320 and RF power meter 324 may be 50 Ω.

[0067] 4, the direct drive circuit 410 is shown in an RF reference measurement mode. The direct drive circuit 410 includes first and second outputs in a first frequency range and a second frequency range. In some examples, the first frequency range is 1.8 MHz to 2.2 MHz, although other frequency ranges may be used. In some examples, the second frequency range is 12.35 MHz to 13.65 MHz, although other frequency ranges may be used.

[0068] The make-break connector 414 connects a first output of the direct drive circuit 410 to an LC circuit 420 during a first reference measurement mode or to a load 412 during a first direct drive mode. The LC circuit 420 is connected to an RF power meter 424 by a conductor 426. The conductor 426 connects the RF power meter 424 to a dummy load 428. In some examples, the conductor 426 includes a coaxial cable.

[0069] A make-break connector 434 connects a second output of the direct drive circuit 410 to an LC circuit 440 during a second RF reference measurement mode or to a load 432, such as a component of a process chamber during a second direct drive mode. In some examples, the loads 412 and 432 are the same load or separate loads. The LC circuit 440 is connected to an RF power meter 444 by a conductor 446. The conductor 446 connects the RF power meter 444 to a dummy load 448. In some examples, the conductor 446 includes a coaxial cable.

[0070] 5, an example of a first frequency range LC circuit 440 is shown. The LC circuit 420 includes a resistor R L1 The LC circuit 420 includes an inductor L1 (having a capacitance of 1.5 μm). A capacitor C2 is connected between the inductor L1 and the capacitor C1. In some examples, the LC circuit 420 has an input impedance that matches the impedance of the direct drive circuit and an output impedance that matches the impedance of the connector, the RF power meter, and the dummy load.

[0071] Referring now to FIG. 6, a second frequency range LC circuit 440 An example of an LC circuit 440 is shown. The LC circuit 440 includes an inductor L2 (with a resistor RL2) in series with a capacitor C3. A capacitor C4 is connected between the capacitor C3 and the output of the LC circuit 440. In some examples, the LC circuit 440 has an input impedance that matches the impedance of the direct drive circuit and an output impedance that matches the impedance of the connector, RF power meter, and load.

[0072] 7, an example of a direct drive system 700 is shown. The direct drive system 700 includes multiple stacked housings defining an upper level 704, a middle level 706, and a lower level 708. In some examples, the direct drive system 700 may be positioned above a processing chamber. In some examples, the sidewalls and the top and bottom surfaces are made of a conductive material, such as aluminum.

[0073] The upper level 704 includes a housing 710 that houses the direct drive circuit 712 described above. In some examples, the mid-level 706 includes multiple housings. Housing 713-1 houses a first RF reference measurement circuit 714-1 and includes a connector 716-1 (such as a coaxial connector) located on an outer wall of the housing 713-1. The mid-level 706 further includes a housing 713-2 that houses a second RF reference measurement circuit 714-2 and includes a connector 716-2 (such as a coaxial connector) located on an outer wall of the housing 713-2.

[0074] In some examples, housing 713-1 is disposed in a parallel, spaced apart relationship to housing 713-2. In some examples, mid-level 706 may include one or more additional housings (such as housing 718). In some examples, one or more housings of mid-level 706 include one or more fans 720 to circulate air within the housings.

[0075] The lower level 708 includes a housing 724-1 that houses a first make-break connector 726-1 that connects one of the outputs of the direct drive circuit 712 to a first RF reference measurement circuit 714-1 or to a component of the processing chamber (such as an inductive coil or an electrode in the substrate support), or disconnects the direct drive circuit 712 from both the first RF reference measurement circuit 714-1 and the component of the processing chamber.

[0076] The lower level 708 further includes another housing 724-2 that houses a second make-break connector 726-2 for connecting one of the outputs of the direct drive circuit 712 to a second RF reference measurement circuit 714-2 or to a component of the processing chamber, or for disconnecting the direct drive circuit 712 from both the second RF reference measurement circuit 714-2 and the component of the processing chamber.

[0077] 8A and 8B, a first RF reference measurement circuit 714-1 for a direct drive system is shown. The first RF reference measurement circuit 714-1 includes a plate 810 electrically connected to a connector 716-1. The plate 810 is also connected to a first terminal of one or more capacitors 816 that are connected in parallel to the plate 810. A second terminal of the one or more capacitors 816 is connected to the plate 812. In some examples, the capacitor 816 includes a ceramic capacitor, although other types of capacitors may be used.

[0078] One or more capacitors 820 are connected in parallel between the plate 812 and a reference potential. For example, the reference potential may be provided by a grounded bottom surface of the housing. In some examples, the capacitor comprises a vacuum capacitor. The extension 824 of the plate 812 is connected to one end of an inductor 830. In some examples, the inductor 830 comprises a conductive material wound into a helical coil. In some examples, the conductive material comprises copper or silver (Ag) plated copper. The opposite end of the inductor 830 is connected to one end of a plate 842. In some examples, the windings of the inductor 830 are held in a spaced apart relationship by a separator 834 extending therebetween. In some examples, the separator 834 is connected to the inductor 830 at a position opposite the inductor 830. Body and , Books Body A plurality of protrusions extending from the Start and Includes multiple Starting The ends are located between the windings of the inductor 830. In some examples, the isolator 834 is made of a non-conductive material such as plastic, although other materials can be used. In some examples, the isolator 834 is made of polyetheretherketone (PEEK). The opposite end of the plate 842 is connected to a connector 844. The connector 844 extends through the housing to a connector 850. In some examples, the connector 850 includes a male connector having a cylindrical body.

[0079] 9A and 9B, a second RF reference measurement circuit 714-2 for a direct drive system is shown. The second RF reference measurement circuit 714-2 includes a plate 910 connected to a connector 716-1. One or more capacitors 912 are connected in parallel between the plate 910 and a reference potential (such as ground, e.g., a grounded enclosure wall). An extension 924 of the plate 910 is connected to one end of an inductor 930. The opposite end of the inductor 930 is connected to one end of a plate 942. In some examples, the windings of the inductor 930 are separated by a separator 934.

[0080] The opposite end of plate 942 is connected to connector 944. Connector 944 extends through the housing to connector 950. In some examples, connector 950 includes a male connector, such as a cylindrical conductive portion.

[0081] 10A and 10B, there is shown a top view of a make-break connector 1010 for a direct drive system. The make-break connector 1010 includes one or more ring portions 102. 2 and In some examples, one or more ring portions 102 may include a conductor 1020 surrounded by a base portion 1024. 2 is , which provides a centering function for the female connector of the direct drive circuit. In some examples, the conductor 1020 includes a cylindrical conductor portion, although other shapes can be used.

[0082] The conductor 1028 extends downward from the base portion 1024 and is electrically connected to the conductor 1020. In some examples, the conductor 1028 has a cylindrical shape and includes a mounting portion 1029 configured to receive a T-shaped connector 1040. In some examples, the mounting portion 1029 defines a flat surface to mate with a flat surface of the body 1042 of the T-shaped connector 1040.

[0083] The T-shaped connector 1040 includes a cylindrical portion 1048 extending from the body 1042 and defining a central cavity 1050. In some examples, the central cavity 1050 is cylindrical and configured to receive one of the connectors 850, 950. In some examples, the T-shaped connector 1040 includes one or more fasteners 1044, such as threaded bolts, received in the bore 1030 to attach the T-shaped connector 1040 to the conductor 1028. In some examples, the fasteners 1044 extend transversely to the axis of the central cavity 1050. Although a particular configuration for the make-break connector 1010 is shown, other configurations may be used.

[0084] 11, a make-break connector 1100 for a direct drive system is shown. The connector 1150 is shown in a direct drive mode (connected) and an RF reference measurement mode (disconnected). In some examples, the connector 1150 includes a rectangular body and one or more flanges 1155 extending along opposite sides of the rectangular body. One or more fasteners 1154 connect and position the connector 1150 relative to the conductor 1028.

[0085] The connector 1150 is attached or coupled to a strap 1120. The strap 1120 is connected to a capacitor 1124 that is supported (fixedly or rotatably) at one end by a support bracket 1125. The opposite end of the capacitor 1124 is connected to the strap (connected to a bracket 1170). 1127 and one end of a capacitor 1128. The opposite end of the capacitor is connected to a support bracket 1125. In some examples, the bracket 1170 is connected to the housing wall. In some examples, the strap 1120 is rotatable relative to the mounting bracket 1125. The body , and are connected to the components of the processing chamber by conductors 1180, 1182.

[0086] 12A and 12B, the top of another example of a make-break connector 1200 for a direct drive system is shown. Instead of using a conductor 1028 with a mounting portion 1029, a conductor 1210 and a T-shaped sliding connector 1220 are used. In some examples, the conductor 1210 has a cylindrical shape. The conductor 1210 is slidably received by a conductive cylindrical inner cavity of the T-shaped sliding connector 1220. The T-shaped sliding connector 1220 includes a first leg 1230 and a second leg 1232 that are axially aligned. The first leg 1230 is connected to the conductor 1210. The T-shaped sliding connector 1220 includes a third leg 1234 that is disposed transversely to the first leg 1230 and the second leg 1232. A conductive cavity 1238 in the third leg 1234 is configured to connect to one of the connectors 850, 950 when placed in the RF reference measurement mode.

[0087] In Figure 12A, the second leg 1232 is shown to connect to a mating connector 1242 (best seen in Figure 12B) extending from the strap 1120 (instead of connector 1150) when deployed in direct drive mode. The third leg 1234 is disconnected from the connectors 850, 950.

[0088] 12B, when in the RF reference measurement mode, the second leg 1232 is disconnected from the mating connector 1242 and the third leg 1234 is connected to one of the connectors 850, 950. As can be seen, the T-shaped sliding connector 1220 allows for quick reconfiguration between the direct drive mode and the RF reference measurement mode.

[0089] Referring now to FIG. 13, the top of another make-break connector 1300 is shown in direct drive mode. The top of a strap 1304 (similar to 1120 but with a different end configuration) is also shown. The strap 1304 includes an "L" shaped end 1320 including a first portion 1322 and a second portion 1324. In some examples, the first portion 1322 is transverse to the second portion 1324. The first portions 1322 further include one or more bores 1334 for receiving one or more threaded fasteners 1330, respectively. In FIG. 13, the strap 1304 is connected to the make-break connector 1300 in a plane that is transverse to a plane that includes the widest portion of the strap 1304 (as opposed to FIG. 11, which is parallel).

[0090] 14, the top of the make-break connector 1300 is shown configured in RF reference measurement mode. The top of the strap 1304 is cut off. In some examples, the strap 1304 rotates around the support bracket 1125 to move away from the top of the make-break connector 1300. The T-shaped connector 1410 includes an "L" shaped end 1420 including a first portion 1422 and a second portion 1424. In some examples, the first portion 1422 is transverse to the second portion 1424. The first portions 1422 further include one or more bores 1434 for receiving one or more threaded fasteners 1430, respectively. The T-shaped connector 1410 includes a cylindrical portion 1452 that defines an inner cavity 1454 for receiving one of the connectors 850 or 950. In this example, the fasteners attach in a direction parallel to the axis of the cavity (unlike other versions that attach in a transverse direction). By adjusting the position of the fastener, the T-connector 1410 can be more easily attached.

[0091] The foregoing description is merely exemplary in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the present disclosure can be embodied in various forms. Thus, while the present disclosure includes specific examples, the true scope of the present disclosure should not be limited to such examples, since other variations will become apparent upon review of the drawings, specification, and the following claims. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each of the embodiments is described above as having certain features, any one or more of these features described with respect to any embodiment of the present disclosure may be implemented in other embodiments and / or combined with any features of the other embodiments, even if such combination is not explicitly described. That is, the described embodiments are not mutually exclusive, and it remains within the scope of the present disclosure to substitute one or more embodiments for one another.

[0092] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms, including "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." In the above disclosure, when a relationship between a first element and a second element is described, unless expressly described as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, but also an indirect relationship in which there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted as meaning a logical (A or B or C) using a non-exclusive logical OR, and not as meaning "at least one of A, at least one of B, and at least one of C."

[0093] In some implementations, the controller is part of the system and may be part of the examples described above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling system operations before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as a "controller" and may control various components or subparts of one or more systems. The controller may be programmed to control any of the processes disclosed herein depending on the processing requirements and / or type of system. Such processes may include supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position and motion settings, loading and unloading of wafers into and out of the tool, and loading and unloading of wafers into and out of other transport tools and / or load locks connected or interlocked with the particular system.

[0094] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0095] The controller may in some implementations be part of or coupled to a computer that is integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or may be all or part of a fab host computer system. This allows for remote access of wafer processing. The computer may allow remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance criteria from multiple manufacturing operations, modify parameters of a current process, set processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool with which the controller is configured to interface or control. Thus, as discussed above, the controller may be distributed, such as by including one or more individual controllers that are networked together and cooperate toward a common purpose, such as the processes and controls described herein. One example of a distributed controller for such purposes would include one or more integrated circuits on the chamber that are located remotely (such as at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that are coupled to control the process on the chamber.

[0096] Exemplary systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0097] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more of the other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material transport to and from containers of wafers to and from tool locations and / or load ports within a semiconductor production factory. The present disclosure may be realized in the following forms. [Form 1] 1. A substrate processing system, comprising: a drive circuit configured to generate an RF drive signal at a first RF frequency; an RF reference measurement circuit including an LC circuit having an input impedance and an output impedance, the output of the LC circuit being configured to be connected to an RF power meter and a dummy load; a make-break connector configured to connect the driver circuit to one of the RF reference measurement circuit and a process chamber load including components of the substrate processing system; Equipped with The output impedance of the drive circuit is matched to the input impedance of the LC circuit; the output impedance of the driver circuit does not match the impedance of the RF power meter and the dummy load; The LC circuit is configured to match the impedance of the drive circuit to the RF power meter and the dummy load. [Form 2] The substrate processing system according to aspect 1, The substrate processing system, wherein the RF reference measurement circuit includes a first conductor connected to an output of the LC circuit, and the RF power meter is connected to the first conductor. [Form 3] The substrate processing system according to aspect 2, The RF reference measurement circuit includes a second conductor connected to an output of the RF power meter, and the dummy load is connected to the second conductor. [Form 4] The substrate processing system according to aspect 3, The output impedance of the driver circuit and the input impedance of the LC circuit are in the range of 0.1 Ω to 10 Ω. [Form 5] A substrate processing system according to aspect 4, A substrate processing system, wherein the output impedance of the driver circuit and the input impedance of the LC circuit are in the range of 0.5 Ω to 2 Ω. [Form 6] The substrate processing system according to aspect 3, A substrate processing system, wherein the output impedance of the LC circuit and the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 20 Ω to 100 Ω. [Form 7] The substrate processing system according to claim 6, The output impedance of the LC circuit and the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 45 ohms to 55 ohms. [Form 8] The substrate processing system according to aspect 3, The LC circuit is a first connector connected to the make-break connector; an inductor having one end connected to the first connector; a first capacitor connected in series with an opposite end of the inductor; a second capacitor connected in parallel between the opposite end of the inductor and the first capacitor; A substrate processing system comprising: [Form 9] The substrate processing system according to aspect 8, The first capacitor includes one or more ceramic capacitors having a first terminal connected to the second capacitor and a second terminal connected to a second connector. [Form 10] A substrate processing system according to aspect 9, The second conductor comprises a coaxial cable. [Form 11] The substrate processing system according to aspect 8, The second capacitor comprises one or more vacuum capacitors. [Form 12] The substrate processing system according to aspect 8, A substrate processing system, wherein the input impedance of the LC circuit is in a range of 0.5 Ω to 2 Ω and the output impedance of the LC circuit is in a range of 45 Ω to 55 Ω. [Form 13] The substrate processing system according to aspect 8, A substrate processing system, wherein the first RF frequency is in the range of 1.8 MHz to 2.2 MHz. [Form 14] The substrate processing system according to aspect 3, The LC circuit is a first connector connected to the make-break connector; an inductor having one end connected to the first connector; a first capacitor connected in series with an opposite end of the inductor; a second capacitor connected in parallel to an opposite end of the first capacitor; A substrate processing system comprising: [Form 15] 15. The substrate processing system according to claim 14, The substrate processing system, wherein the first capacitor and the second capacitor comprise one or more vacuum capacitors. [Form 16] 15. The substrate processing system according to claim 14, A substrate processing system, wherein the first RF frequency is in the range of 12.35 MHz to 13.65 MHz. [Form 17] The substrate processing system according to aspect 1, The make-break connector comprises: A bracket and a first conductor extending from one side of the bracket; a second conductor extending from an opposite side of the bracket and connected to the first conductor; a connector removably attached to the second conductor and configured to connect the second conductor to the RF reference measurement circuit and not to connect the second conductor to the driver circuit; Including, the connector is T-shaped and includes a body connected to the second conductor and a cylindrical portion extending from the body and including a cavity; The cavity of the cylindrical portion is configured to couple to the RF reference measurement circuit. [Form 18] The substrate processing system according to aspect 1, The make-break connector comprises: A bracket and a first conductor extending from one side of the bracket; a second conductor extending from an opposite side of the bracket and connected to the first conductor; a connector configured to be removably attached to the second conductor and to connect the second conductor to the driver circuit and not to connect the second conductor to the RF reference measurement circuit; Including, The connector includes a body, a bore in the body, and a fastener extending through the bore to connect the body to the second conductor. [Form 19] The substrate processing system according to aspect 1, The make-break connector comprises: A bracket and a first conductor extending from one side of the bracket; a second conductor extending from an opposite side of the bracket and connected to the first conductor; a connector configured to removably attach to the second conductor and to connect the second conductor to one of the RF reference measurement circuit and the driver circuit; Including, The connector comprises a T-connector. [Form 20] 20. The substrate processing system according to claim 19, the T-shaped connector includes a first leg and a second leg including first and second cavities, respectively; the first leg and the second leg are slidably received on the second conductor; the T-shaped connector includes a third leg disposed transversely to the first leg and the second leg, the third leg including a cavity configured to connect to the RF reference measurement circuit. [Form 21] 20. The substrate processing system according to claim 19, The T-shaped connector is a body including a bore; a fastener extending through the bore for connecting the body to the second conductor; a cylindrical portion extending from the body and including a cavity configured to connect to the RF reference measurement circuit; A substrate processing system comprising: [Form 22] 22. The substrate processing system according to claim 21, The cylindrical portion has an axis, The fasteners are connected transversely to the axis. [Form 23] 22. The substrate processing system according to claim 21, The cylindrical portion has an axis, The fasteners are connected in a direction parallel to the axis.

Claims

1. 1. A substrate processing system, comprising: a drive circuit configured to generate a radio frequency (RF) drive signal at a first RF frequency; an RF reference measurement circuit including an inductor and capacitor (LC) circuit having an input impedance and an output impedance, the output of the LC circuit being configured to be connected to an RF power meter and a dummy load; a make-break connector configured to connect the driver circuit to one of the RF reference measurement circuit and a processing chamber load including components of the substrate processing system; Equipped with an output impedance of the driver circuit matches the input impedance of the LC circuit; the output impedance of the driver circuit does not match the impedance of the RF power meter and the dummy load; The LC circuit is configured to match the output impedance of the driver circuit to an impedance of the RF power meter and the dummy load.

2. 2. The substrate processing system of claim 1, The substrate processing system, wherein the RF reference measurement circuit includes a first conductor connected to the output of the LC circuit, and the RF power meter is connected to the first conductor.

3. 3. The substrate processing system according to claim 2, The RF reference measurement circuit includes a second conductor connected to an output of the RF power meter, and the dummy load is connected to the second conductor.

4. 4. The substrate processing system according to claim 3, The output impedance of the drive circuit and the input impedance of the LC circuit are in the range of 0.1 Ω to 10 Ω.

5. 5. The substrate processing system according to claim 4, The output impedance of the driver circuit and the input impedance of the LC circuit are in the range of 0.5 Ω to 2 Ω.

6. 4. The substrate processing system according to claim 3, A substrate processing system, wherein the output impedance of the LC circuit and the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 20 ohms to 100 ohms.

7. 7. The substrate processing system according to claim 6, A substrate processing system, wherein the output impedance of the LC circuit and the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 45 ohms to 55 ohms.

8. 4. The substrate processing system according to claim 3, The LC circuit is a first connector connected to the make-break connector; an inductor having one end connected to the first connector; a first capacitor having a first end connected to an opposite end of the inductor and a second end connected to the output of the LC circuit; a second capacitor having a first end connected between the opposite end of the inductor and the first end of the first capacitor, the second capacitor having a second end connected to a reference potential; A substrate processing system comprising:

9. 9. The substrate processing system of claim 8, The first capacitor includes one or more ceramic capacitors having a first terminal connected to the second capacitor and a second terminal connected to a second connector.

10. 10. The substrate processing system of claim 9, The second conductor comprises a coaxial cable.

11. 9. The substrate processing system of claim 8, The second capacitor comprises one or more vacuum capacitors.

12. 9. The substrate processing system of claim 8, The input impedance of the LC circuit is in a range of 0.5 Ω to 2 Ω, and the output impedance of the LC circuit is in a range of 45 Ω to 55 Ω.

13. 9. The substrate processing system of claim 8, 11. A substrate processing system, wherein the first RF frequency is in the range of 1.8 MHz to 2.2 MHz.

14. 4. The substrate processing system according to claim 3, The LC circuit is a first connector connected to the make-break connector; an inductor having one end connected to the first connector; a first capacitor having a first end connected in series with an opposite end of the inductor, the first capacitor having a second end connected to the output of the LC circuit; a second capacitor having a first end connected to the second end of the first capacitor, the second capacitor having a second end connected to a reference potential; A substrate processing system comprising:

15. 15. The substrate processing system of claim 14, The substrate processing system, wherein the first capacitor and the second capacitor comprise one or more vacuum capacitors.

16. 15. The substrate processing system of claim 14, The substrate processing system, wherein the first RF frequency is in the range of 12.35 MHz to 13.65 MHz.

17. 2. The substrate processing system of claim 1, The make-break connector comprises: A bracket and a first conductor extending from one side of the bracket; a second conductor extending on an opposite side of the bracket and connected to the first conductor; a connector removably attached to the second conductor and configured to connect the second conductor to the RF reference measurement circuit and not to the driver circuit; Including, the connector is T-shaped and includes a body connected to the second conductor and a cylindrical portion extending from the body and including a cavity; The cavity of the cylindrical portion is configured to connect to the RF reference measurement circuit.

18. 2. The substrate processing system of claim 1, The make-break connector comprises: A bracket and a first conductor extending from one side of the bracket; a second conductor extending on an opposite side of the bracket and coupled to the first conductor; a connector configured to be removably attached to the second conductor and to connect the second conductor to the driver circuit and not to connect the second conductor to the RF reference measurement circuit; Including, The connector includes a body, a bore in the body, and a fastener extending through the bore to connect the body to the second conductor.

19. 2. The substrate processing system of claim 1, The make-break connector comprises: A bracket and a first conductor extending from one side of the bracket; a second conductor extending on an opposite side of the bracket and connected to the first conductor; a connector configured to removably attach to the second conductor and to connect the second conductor to one of the RF reference measurement circuit and the driver circuit; Including, The connector comprises a T-connector.

20. 20. The substrate processing system of claim 19, the T-shaped connector includes a first leg and a second leg including first and second cavities, respectively; the first leg and the second leg are slidably received on the second conductor; the T-shaped connector includes a third leg disposed transversely to the first leg and the second leg, the third leg including a cavity configured to connect to the RF reference measurement circuit.

21. 20. The substrate processing system of claim 19, The T-shaped connector is a body including a bore; a fastener extending through the bore for connecting the body to the second conductor; a cylindrical portion extending from the body and including a cavity configured to connect to the RF reference measurement circuit; A substrate processing system comprising:

22. 22. The substrate processing system of claim 21, The cylindrical portion has an axis, The fasteners are connected transversely to the axis.

23. 22. The substrate processing system of claim 21, The cylindrical portion has an axis, The fasteners are connected in a direction parallel to the axis.

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