Plasma Generator

Abstract

To provide a plasma generation device that provides impurities-reduced active species.SOLUTION: According to one embodiment of the present specification, a plasma generation device, which has a plurality of operation modes including first and second modes, performs plasma discharge. The plasma generation device includes: a first power-supply unit capable of changing a frequency within a first frequency range; a second power-supply unit capable of changing the frequency within a second frequency range at least partially different from the first frequency range; a dielectric tube; and an antenna module that includes a first unit coil wound around the dielectric tube at least once, a second unit coil wound around the dielectric tube at least once, and a first capacitor connected in series between the first and second unit coils.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present specification relates to a plasma generating device and a control method thereof, and more specifically, to a plasma generating device for reducing by-products generated during plasma discharge and a control method thereof. [Background technology]

[0002] Plasma discharges have many industrial and scientific applications. They can be used to generate activated species of various gases for use in various industries, such as semiconductor wafer processing, or to treat by-products produced by industrial processes.

[0003] Inductively Coupled Plasma and Capacitively Coupled Plasma are widely used as plasma sources for generating plasma discharge. Inductively Coupled Plasma is a method in which RF power is applied to a coil to form an induced electric field, and plasma discharge occurs through the induced electric field.

[0004] When a plasma discharge is generated, impurities may flow into the active species due to, for example, collisions between the active species or ions generated as a result of the discharge caused by the voltage applied to the discharge antenna and the dielectric tube. Therefore, there is a demand for the development of a plasma generation device that reduces the impurities contained in the active species by changing the structure and design of the antenna that generates the plasma discharge. Summary of the Invention [Problem to be solved by the invention]

[0005] One object of the present disclosure is to provide a plasma generating device.

[0006] Another object of the present invention is to provide a plasma generating device that provides activated species with reduced impurities.

[0007] The problems to be solved by this specification are not limited to those mentioned above, and problems not mentioned should be clearly understood by a person skilled in the art to which the present invention pertains from this specification and the drawings. [Means for solving the problem]

[0008] According to an embodiment of the present specification, there can be provided a plasma generation device that performs plasma discharge and has a plurality of operation modes including a first mode and a second mode, the plasma generation device comprising: a first power supply device capable of changing a frequency within a first frequency range; a second power supply device capable of changing a frequency within a second frequency range that is at least partially different from the first frequency range; a dielectric tube; a first unit coil wound at least once around the dielectric tube; a second unit coil wound at least once around the dielectric tube; and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil, wherein when the operation mode is the first mode, the antenna module induces a first plasma discharge based on a power signal having a first frequency within the first frequency range, and when the operation mode is the second mode, the antenna module induces a second plasma discharge based on a power signal having a second frequency within the second frequency range, the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency corresponds to a first resonant frequency determined according to the first inductance and the first capacitance.

[0009] According to another embodiment of the present specification, there can be provided a control method for a plasma generation device including a first power supply device capable of changing a frequency within a first frequency range, a second power supply device capable of changing a frequency within a second frequency range at least partially different from the first frequency range, a dielectric tube, a first unit coil wound at least once around the dielectric tube, a second unit coil wound at least once around the dielectric tube, and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil, the control method for a plasma generation device including a step of operating in a first mode of providing RF power to the antenna module with a first frequency as a driving frequency, and a step of operating in a second mode of providing RF power to the antenna module with a second frequency as a driving frequency, wherein the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the second frequency corresponds to a second resonant frequency determined by the first inductance and the first capacitance.

[0010] According to still another embodiment of the present specification, there is provided a plasma generating device that generates plasma by receiving power from a first power supply device capable of changing a frequency within a first frequency range when an operation mode is a first mode, and receiving power from a second power supply device capable of changing a frequency within a second frequency range that is at least partially different from the first frequency range when the operation mode is a second mode, the plasma generating device including an antenna module including a dielectric tube, a first unit coil wound around the dielectric tube at least once, a second unit coil wound around the dielectric tube at least once, and a first capacitor connected in series between the first unit coil and the second unit coil. and a power module, when the operation mode is the first mode, the antenna module induces a first plasma discharge based on a power signal having a first frequency within the first frequency range, and when the operation mode is the second mode, the antenna module induces a second plasma discharge based on a power signal having a second frequency within the second frequency range, the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency corresponds to a first resonant frequency determined based on the first inductance and the first capacitance.

[0011] The means for solving the problems presented in this specification are not limited to the means for solving the problems presented above, and means for solving the problems not mentioned should be clearly understood by a person skilled in the art to which the present invention belongs from this specification and drawings. Effect of the Invention

[0012] According to the present specification, it is possible to provide a plasma generating device that can be used in various environments.

[0013] According to the present specification, it is possible to provide a plasma generating device in which impurities contained in active species are reduced.

[0014] The effects of the invention according to this specification are not limited to the effects described above, and effects not mentioned should be clearly understood by those skilled in the art to which the invention pertains from the specification and drawings. [Brief description of the drawings]

[0015] [Figure 1] FIG. 1 is a diagram for explaining a plasma generation system according to an embodiment of the present specification. [Diagram 2] FIG. 1 is a diagram for explaining a plasma generation system according to an embodiment of the present specification. [Diagram 3] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Figure 4] FIG. 2 is a diagram illustrating a DC electrode according to an embodiment of the present specification. [Diagram 5] FIG. 2 is a diagram illustrating a DC power supply according to an embodiment of the present specification. [Figure 6] FIG. 2 is a diagram illustrating a DC electrode according to an embodiment of the present specification. [Figure 7] FIG. 2 is a diagram illustrating a DC power supply according to an embodiment of the present specification. [Figure 8] 1 is a diagram for explaining an antenna module according to an embodiment of the present specification; [Figure 9] 1A to 1C are diagrams for explaining the operation of an antenna module according to an embodiment of the present specification. [Figure 10] 1 is a diagram for explaining an antenna module according to an embodiment of the present specification; [Figure 11] 1A to 1C are diagrams for explaining the operation of an antenna module according to an embodiment of the present specification. [Figure 12] 1A to 1C are diagrams for explaining the configuration of an antenna module according to an embodiment of the present specification. [Figure 13] FIG. 2 is a diagram for explaining an RF power supply according to an embodiment of the present specification. [Figure 14] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 15]FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 16] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 17] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Figure 18] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Figure 19] 1 is a diagram for explaining a method for controlling a plasma generating device according to an embodiment of the present specification. [Figure 20] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Figure 21] 1 is a diagram for explaining a method for controlling a plasma generating device according to an embodiment of the present specification. [Figure 22] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 23] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 24] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Diagram 25] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 26] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 27] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 28] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 29] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Diagram 30] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Diagram 31]FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Diagram 32] 1 is a diagram for explaining a method for controlling a plasma generating device according to an embodiment of the present specification. [Diagram 33] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Diagram 34] 1 is a diagram for explaining a method for controlling a plasma generating device according to an embodiment of the present specification. [Diagram 35] 1 is a diagram for explaining a method for controlling a plasma generating device according to an embodiment of the present specification. [Diagram 36] 1 is a diagram for explaining an antenna module according to an embodiment of the present specification; [Figure 37] FIG. 2 is a diagram for explaining a unit antenna according to an embodiment of the present specification. [Figure 38] 1 is a diagram for explaining a voltage applied to an antenna module according to an embodiment of the present specification. [Figure 39] 1 is a diagram for explaining a voltage applied to an antenna module according to an embodiment of the present specification. [Diagram 40] 1 is a diagram for explaining a voltage applied to an antenna module according to an embodiment of the present specification. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] According to an embodiment of the present specification, there can be provided a plasma generation device that performs plasma discharge and has a plurality of operation modes including a first mode and a second mode, the plasma generation device comprising: a first power supply device capable of changing a frequency within a first frequency range; a second power supply device capable of changing a frequency within a second frequency range that is at least partially different from the first frequency range; a dielectric tube; a first unit coil wound at least once around the dielectric tube; a second unit coil wound at least once around the dielectric tube; and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil, wherein when the operation mode is the first mode, the antenna module induces a first plasma discharge based on a power signal having a first frequency within the first frequency range, and when the operation mode is the second mode, the antenna module induces a second plasma discharge based on a power signal having a second frequency within the second frequency range, the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency corresponds to a first resonant frequency determined according to the first inductance and the first capacitance.

[0017] According to an embodiment of the present disclosure, the first power supply device may include a first matching element having a first impedance.

[0018] According to one embodiment of the present specification, when the operating mode is the first mode, the antenna module performs the first plasma discharge based on a power signal having the first frequency, and the first frequency may correspond to the first resonant frequency determined based on the first impedance, the first inductance, and the first capacitance.

[0019] According to one embodiment of the present specification, the second power supply device includes a second matching element having a second impedance, and when the operating mode is a second mode, the antenna module performs the second plasma discharge based on a power signal having the second frequency, and the second frequency may correspond to a second resonant frequency different from the first resonant frequency, determined based on the second impedance, the first inductance, and the first capacitance.

[0020] According to one embodiment of the present specification, the second resonant frequency may be greater than the first resonant frequency, and when the operating mode is the first mode, a first voltage which is a voltage between one end of the first unit coil not connected to the first capacitor and one end of the second unit coil not connected to the first capacitor may be smaller than a second voltage which is a voltage between one end of the first unit coil not connected to the first capacitor and one end of the second unit coil not connected to the first capacitor when the operating mode is the second mode.

[0021] According to one embodiment of the present specification, when the operating mode is the first mode, the voltage across the first unit coil may correspond to a voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0022] According to one embodiment of the present specification, the voltage across the antenna module when the operating mode is the first mode may be smaller than the voltage across the antenna module when the operating mode is the second mode.

[0023] According to one embodiment of the present specification, the magnitude of a first current flowing through the antenna module when the operating mode is the first mode may be smaller than the magnitude of a second current flowing through the antenna module when the operating mode is the second mode.

[0024] According to one embodiment of the present specification, when the operating mode is the first mode, the power consumed by the antenna module may be a first power, and when the operating mode is the second mode, the power consumed by the antenna module may be a second power smaller than the first power.

[0025] According to one embodiment of the present specification, there can be provided a control method for a plasma generation device including a first power supply device capable of changing a frequency within a first frequency range, a second power supply device capable of changing a frequency within a second frequency range at least a part of which is different from the first frequency range, a dielectric tube, a first unit coil wound at least once around the dielectric tube, a second unit coil wound at least once around the dielectric tube, and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil, the control method for a plasma generation device including a step of operating in a first mode of providing RF power to the antenna module with a first frequency as a driving frequency, and a step of operating in a second mode of providing RF power to the antenna module with a second frequency as a driving frequency, wherein the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the second frequency corresponds to a second resonant frequency determined by the first inductance and the first capacitance.

[0026] According to one embodiment of the present specification, the second power supply device may include a second matching element having a second impedance, and the step of operating in the second mode may include operating with the second frequency corresponding to the second resonant frequency determined based on the first inductance, the first capacitance, and the second impedance as a drive frequency.

[0027] According to one embodiment of the present specification, the first power supply device may include a first matching element having a first impedance, and the step of operating in the first mode may include operating at a first frequency corresponding to a first resonant frequency determined based on the first inductance, the first capacitance, and the first impedance as a drive frequency.

[0028] According to one embodiment of the present specification, when the operating mode is the first mode, the power consumed by the antenna module may be a first power, and when the operating mode is the second mode, the power consumed by the antenna module may be a second power greater than the first power.

[0029] According to one embodiment of the present specification, when the operating mode is the first mode, the voltage across the first unit coil may correspond to a voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0030] According to one embodiment of the present specification, the magnitude of a first current flowing through the antenna module when the operating mode is the first mode may be smaller than the magnitude of a second current flowing through the antenna module when the operating mode is the second mode.

[0031] According to one embodiment of the present specification, the control method of the plasma generation device may further include a step of acquiring a current flowing through the antenna module when the operation mode is the first mode, and a step of changing the operation mode to the second mode when the current flowing through the antenna module is equal to or less than a reference value.

[0032] According to one embodiment of the present specification, the method for controlling the plasma generation device may further include a step of acquiring a current flowing through an inverter of the first power supply device when the operation mode is the first mode, and a step of changing the operation mode to the second mode when the current flowing through the inverter of the first power supply device is equal to or less than a reference value.

[0033] According to an embodiment of the present specification, there can be provided a plasma generation device that generates plasma by receiving power from a first power supply device capable of changing a frequency within a first frequency range when an operation mode is a first mode, and receiving power from a second power supply device capable of changing a frequency within a second frequency range at least a part of which is different from the first frequency range when the operation mode is a second mode, the plasma generation device comprising: a dielectric tube; a first unit coil wound at least once around the dielectric tube; a second unit coil wound at least once around the dielectric tube; and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil, wherein when the operation mode is the first mode, the antenna module induces a first plasma discharge based on a power signal having a first frequency within the first frequency range, and when the operation mode is the second mode, the antenna module induces a second plasma discharge based on a power signal having a second frequency within the second frequency range, the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency corresponds to a first resonant frequency determined based on the first inductance and the first capacitance.

[0034] According to one embodiment of the present specification, the voltage across the antenna module when the operating mode is the first mode may be smaller than the voltage across the antenna module when the operating mode is the second mode.

[0035] According to one embodiment of the present specification, when the operating mode is the first mode, the voltage across the first unit coil may correspond to a voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0036] According to one embodiment of the present specification, there is provided an antenna module coupled to a dielectric tube and receiving power from a power source, the antenna module comprising: a first unit antenna including a first unit turn having a first point and a second point, and a second unit turn having a third point and a fourth point, the first unit turn being disposed between the second unit turn and the dielectric tube, and the second point of the first unit turn being connected to the third point of the second unit turn; a first capacitor electrically interposed between a first terminal of the power source and the first point of the first unit turn, the first point of the first unit turn being connected to the first capacitor; and a second capacitor electrically interposed between a second terminal of the power source and the fourth point of the second unit turn, wherein the capacitance of the second capacitor is smaller than the capacitance of the first capacitor in order to minimize damage to the dielectric tube and generation of by-products due to a voltage applied to the antenna module.

[0037] According to one embodiment of the present specification, the antenna module may include a third capacitor connected between the fourth point of the second unit turn and the second capacitor, and the capacitance of the third capacitor may be smaller than the capacitance of the second capacitor.

[0038] According to an embodiment of the present specification, the capacitance of the first capacitor may be more than twice the capacitance of the second capacitor.

[0039] According to an embodiment of the present specification, a combined capacitance of the first capacitor and the second capacitor may correspond to a capacitance of the third capacitor.

[0040] According to one embodiment of the present specification, the antenna module further includes a second unit antenna including a third unit turn having a fifth point and a sixth point and a fourth unit turn having a seventh point and an eighth point, wherein the third unit turn is positioned between the dielectric tube and the fourth unit turn, the sixth point of the third unit turn is connected to the seventh point of the fourth unit turn, the third capacitor is electrically interposed between the fourth point of the second unit turn and the fifth point of the third unit turn, and the second capacitor is electrically interposed between the eighth point of the fourth unit turn and the second terminal of the power source.

[0041] According to one embodiment of the present specification, the first unit turn and the second unit turn may be located on a plane perpendicular to the longitudinal direction of the dielectric tube, and each of the first unit turn and the second unit turn may have an arc shape.

[0042] According to an embodiment herein, the first point may be located closer to the tube than the fourth point.

[0043] According to one embodiment of the present specification, when power is supplied to the antenna module, the voltage applied to the reactance component of the first capacitor may be smaller than the voltage applied to the reactance component between the first point and the second point, and the voltage applied to the reactance component of the third capacitor may correspond to the voltage applied to the reactance component between the first point and the fourth point.

[0044] According to one embodiment of the present specification, the antenna module resonates at a resonant frequency determined based on the capacitance of the third capacitor and the inductance of the first unit antenna, and when the antenna module is in a resonant state, a point at which the potential of the reactance component with respect to the first terminal becomes zero may be located on the first unit turn of the first unit antenna.

[0045] According to one embodiment of the present specification, the antenna module resonates at a resonant frequency determined based on the capacitance of the third capacitor and the inductance of the first unit antenna, and when the antenna module is in a resonant state, a voltage applied to a reactance component between the termination of the first point and the first terminal of the power supply may be substantially the same as a voltage applied to a reactance component between the termination of the second point and the first terminal of the power supply.

[0046] According to one embodiment of the present specification, an antenna module can be provided that is coupled to a dielectric tube and receives power from a power source, the antenna module comprising a first unit antenna including a first unit turn having a first point and a second point, and a second unit turn having a third point and a fourth point, the first unit turn being positioned between the dielectric tube and the second unit turn, and the second point of the first unit turn being connected to the third point of the second unit turn, a first capacitor electrically interposed between a first terminal of the power source and the first point of the first unit turn, and a second capacitor connected to the fourth point of the second unit turn, the first capacitor being electrically interposed between the first terminal of the power source and the first point, and when power is supplied to the antenna module, a point at which the voltage of the reactance component relative to the first terminal becomes zero is located on the first unit turn, and the point is a point at which the voltage is the lowest in the first unit antenna.

[0047] According to one embodiment of the present specification, the antenna module resonates at a resonant frequency determined based on the capacitance of the second capacitor and the inductance of the first unit antenna, and when the antenna module is in a resonant state, the point at which the voltage in the first unit antenna is lowest may be located within the first unit turn.

[0048] According to an embodiment of the present specification, when power is supplied to the antenna module, the point at which the voltage of the first unit antenna is lowest may be located on the first unit turn.

[0049] According to an embodiment of the present specification, when power is supplied to the antenna module, a point at which the absolute value of the potential of the reactance component in the first unit antenna is minimum may be located on the first unit turn.

[0050] According to an embodiment of the present specification, the capacitance of the first capacitor may be more than twice the capacitance of the second capacitor.

[0051] According to one embodiment of the present specification, the capacitance of the second capacitor may be smaller than the capacitance of the first capacitor in order to minimize damage to the tube and the generation of by-products due to the voltage applied to the antenna module.

[0052] According to one embodiment of the present specification, the antenna module may further include a second unit antenna including a third unit turn extending from a fifth point to a sixth point and a fourth unit turn extending from a seventh point to an eighth point, wherein the third unit turn is located inside the fourth unit turn, the sixth point is connected to the seventh point, the second capacitor is connected between the fourth point and the fifth point, and may further include a third capacitor connected between the eighth point and the second terminal of the power source.

[0053] According to an embodiment of the present specification, the capacitance of the second capacitor may be smaller than the capacitance of the third capacitor.

[0054] According to an embodiment of the present specification, a combined capacitance of the capacitance of the first capacitor and the capacitance of the third capacitor may correspond to a capacitance of the second capacitor.

[0055] According to one embodiment of the present specification, an antenna module can be provided that is coupled to a dielectric tube and receives power from a power source, the antenna module comprising: a first unit antenna including a first unit turn extending from a first point to a second point and a second unit turn extending from a third point to a fourth point, the first unit turn being located inside the second unit turn and the second point being connected to the third point; a first capacitor connected to the first point of the first unit turn and connected between a first terminal of the power source and the first point; and a second capacitor connected between a second terminal of the power source and the fourth point, the capacitance of the second capacitor being different from the capacitance of the first capacitor.

[0056] According to one embodiment of the present specification, the antenna module further includes a second unit antenna including a third unit turn extending from a fifth point to a sixth point and a fourth unit turn extending from a seventh point to an eighth point, the third unit turn being located inside the fourth unit turn and the sixth point being connected to the seventh point, the third capacitor being connected between the fourth point and the fifth point, and the second capacitor being connected between the eighth point and the second terminal of the power source, and a combined capacitance of the capacitance of the first capacitor and the capacitance of the second capacitor may correspond to the capacitance of the third capacitor. (Embodiments of the invention)

[0057] The above objects, features and advantages of the present specification will become more apparent from the following detailed description taken in conjunction with the drawings. However, the present invention can be modified in various ways and can have various embodiments, and a specific embodiment will be illustrated in the drawings and described in detail below.

[0058] In the drawings, the thickness of layers and regions are exaggerated for clarity, and when an element or layer is referred to as being "on" or "on" another element or layer, it includes not only directly on the other element or layer, but also when there are other layers or components in between. In principle, the same reference numerals refer to the same elements throughout the specification. Also, the same reference numerals are used to describe elements having the same functions within the same concept shown in the drawings of each embodiment.

[0059] If it is determined that a detailed description of known functions or configurations according to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, numbers (e.g., 1, 2, etc.) used in the description of this specification are merely identification symbols for distinguishing one component from another.

[0060] In addition, the suffixes "module" and "section" for components used in the following description are given or mixed for the sole consideration of ease of drafting the specification, and do not in themselves have any distinct meanings or roles.

[0061] The method according to the embodiment may be embodied in the form of program instructions that can be executed by various computer means and recorded on a computer readable medium. The computer readable medium may include, alone or in combination, program instructions, data files, data structures, and the like. The program instructions recorded on the medium may be those specifically designed and constructed for the embodiment or those known and available to those skilled in the art of computer software. Examples of computer readable recording media include magnetic media such as hard disks, floppy disks, and magnetic tapes, optical media such as CD-ROMs, DVDs, magneto-optical media such as floptical disks, and hardware devices specifically configured to store and execute program instructions such as ROM, RAM, flash memory, and the like. Examples of program instructions include not only machine language code, such as produced by a compiler, but also high-level language code that can be executed by a computer using an interpreter, and the like. The above hardware devices may be configured to operate as one or more software modules to perform the operations of the embodiment, and vice versa.

[0062] 1. Plasma Generation System According to one embodiment, a plasma generating system can be provided.

[0063] 1 is a diagram illustrating a plasma generating system according to an embodiment. Referring to FIG 1, the plasma generating system may include a power supply unit 100 for providing power, a plasma generating unit 200 for generating plasma by receiving power from the power supply unit 100, and a gas supply unit 300 for supplying gas to the plasma generating unit 200. The plasma generating system may further include a processing unit 400 for performing a process using the generated plasma.

[0064] The power supply unit 100 may supply power required for generating plasma. The power supply unit 100 may supply power to the plasma generating unit. The power supply unit 100 may include a DC power supply and / or an RF power supply. The power supply unit 100 may provide a high voltage pulse to the plasma generating unit 200 via the DC power supply. The power supply unit 100 may provide RF power to the plasma generating unit 200 via the RF power supply.

[0065] The plasma generating unit 200 can perform plasma discharge. The plasma generating unit 200 can obtain a discharge gas and perform plasma discharge through the discharge gas. The plasma generating unit 200 can perform inductively coupled plasma discharge or capacitively coupled plasma discharge.

[0066] The plasma generating unit 200 may be a remote plasma source. The plasma generating unit 200 may generate activated species and provide the generated activated species to the processing unit 400.

[0067] The plasma generating unit 200 may include an atmospheric pressure plasma device that generates plasma discharge under atmospheric pressure (normal pressure). For example, the plasma generating unit 200 may include an atmospheric pressure plasma device that generates plasma discharge under several hundred Torr to atmospheric pressure (750 Torr).

[0068] The plasma generating unit 200 may include a low-pressure plasma device that generates low-pressure plasma discharge. For example, the plasma generating unit 200 may include a 10 -5 ~10 -7 The low pressure plasma device may include a low pressure plasma device that generates plasma at a process pressure of several mTorr to several Torr using a desired process gas after creating an initial vacuum (base pressure) environment of less than 100 Torr.

[0069] The plasma generating unit 200 can perform low-temperature plasma discharge operations at tens to hundreds of degrees. For example, the plasma generating unit 200 can perform low-pressure low-temperature plasma discharge operations such as cleaning, etching, deposition, surface treatment, and material synthesis in semiconductor and display processes. In addition, for example, the plasma generating unit 200 can perform atmospheric pressure low-temperature plasma discharge operations for cleaning processes of glass substrates, hydrophilic / hydrophobic surface modification, nanotechnology, sterilization, removal of harmful substances, and carbon dioxide reduction.

[0070] The plasma generating unit 200 can also perform high-temperature plasma discharge operations for gas reforming, microparticle generation, plasma welding, cutting, metallurgy, and the like, at high temperatures of several thousand to several tens of thousands of degrees.

[0071] Hereinafter, the plasma generating unit 200, the plasma generating device, etc. can be interpreted as a device that performs the above-mentioned low-temperature plasma discharge or high-temperature plasma discharge.

[0072] The plasma generating unit 200 may generate a seed charge for plasma generation. In particular, when the plasma generating unit 200 performs atmospheric pressure plasma discharge, the plasma generating unit 200 may generate a seed charge for initial discharge. The plasma generating unit 200 includes a DC electrode, and may generate a seed charge when a DC high voltage pulse is provided to the DC electrode.

[0073] The plasma generating unit 200 can perform initial discharge and main discharge for plasma generation. The plasma generating unit 200 can perform initial discharge by a capacitive coupling mode (E mode) or main discharge by an inductive coupling mode (H mode). The plasma generating unit 200 includes an inductive coupling antenna including a coil, and can perform initial discharge or main discharge by providing RF power to the inductive coupling antenna.

[0074] The specific configuration and operation of the plasma generating unit 200 will be described in more detail below.

[0075] The gas supplying unit 300 may supply a gas for plasma discharge to the plasma generating unit 200. The gas supplying unit 300 may supply a reactive gas or a process gas to the plasma generating unit 200. The gas supplying unit 300 may supply a gas selected according to a function or purpose of the plasma generating unit 200 or the process unit 400.

[0076] For example, the gas supply unit 300 supplies NF3 gas (nitrogen trifluoride gas), Ar gas (argon gas), Xe gas (xenon gas), Kr gas (krypton gas), N2 gas (nitrogen gas), O2 gas (oxygen gas), H2 gas (hydrogen gas), He gas (helium gas), Ne gas (neon gas), SiH4 gas (monosilane gas), NH3 gas (ammonia gas), PH3 gas (phosphine gas), B2H6 gas (diborane gas), and the like. The plasma generating unit 200 can be supplied with any one of the following gases or a mixture of gas and air: tetrafluoroethylene (DCS), dichlorosilane (DCS), octafluoropentene (C5F8), carbon tetrafluoride (CF4), hydrogen bromide (HBr), chlorine (Cl2), xenon (Xe), krypton (Kr), sulfur hexafluoride (SF6), and methane (CH4). The gas supplying unit 300 can also supply gas to the plasma generating unit via a liquid-phase precursor such as tetra-ethyl-ortho-silicate (TEOS), ((ethylmethylamino)zirconium), trimethyl aluminum, or hexamethyldisiloxane.

[0077] The processing unit 400 may perform a process before or after plasma discharge. The processing unit may perform a target process through the plasma generated by the plasma generating unit 200. Alternatively, the processing unit 400 may deliver a material generated by the execution of a target process to the plasma generating unit.

[0078] The target process may be a cleaning process that removes fine oil films on the surface through collision of plasma ions / radicals with the surface of the material to be treated, an etching process that generates plasma using a reactive etching gas according to the purpose and uses it to selectively remove materials, a deposition process that deposits materials on the surface by injecting a deposition gas suitable for the purpose and an additive gas for plasma discharge, a modification process that changes the characteristics of the surface using plasma, a material decomposition process that decomposes the target material through plasma discharge, etc.

[0079] The process unit 400 can perform a target operation related to semiconductor substrate processing. For example, the process unit 400 can perform a cleaning process for the inside of a process chamber by receiving activated species (e.g., activated hydrogen species) from a plasma generating unit.

[0080] The processing unit 400 may include a processing chamber, a substrate holder disposed within the processing chamber on which a semiconductor substrate (e.g., a silicon semiconductor substrate) to be processed is positioned, a showerhead disposed on top of the substrate holder for supplying substrate processing materials into the processing chamber, and / or a vacuum pump for evacuating air from within the processing chamber.

[0081] The plasma generating system may be configured such that the processing unit 400 performs a target process through plasma generated through the plasma generating unit, or a by-product generated by the target process of the processing unit 400 is treated by the plasma generating unit 200. Figure 2 is a diagram for explaining a plasma generating system according to some embodiments.

[0082] 2(a), a plasma generation system according to an embodiment may include a processing unit 401 and a plasma generating unit 201 for treating a material generated by the processing unit 401. For example, referring to FIG. 2(a), the plasma generation system may include a gas scrubber device. The processing unit 401 is a device for performing a semiconductor manufacturing process, and the plasma generating unit 201 may perform treatment of a difficult-to-biodegrade gas, such as sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), or perfluorocarbon (PFC) gas, generated in the semiconductor manufacturing process of the processing unit 401.

[0083] 2(b), the plasma generation system according to an embodiment may include a plasma generating unit 202 that generates activated species and supplies the activated species to a processing unit 402, and a processing unit 402 that performs a process using the activated species. For example, the plasma generating unit 202 may generate activated species by plasma discharging gas such as NF3, H2, N2, O2, C3F8, CF4, Cl2, SiH4, etc. The processing unit 402 may perform operations such as dry etching, PECVD, PVD, ashing, cleaning, etc., using the activated species generated by the plasma generating unit 202.

[0084] 2.Plasma generating device 2.1 Overview of the plasma generation device In the following, a plasma generating device that resonates at a plurality of resonant frequencies to generate plasma discharge will be described.

[0085] According to one embodiment, the plasma generating device may include a plurality of modules each having a different impedance. When power is supplied at a resonant frequency corresponding to each module, the plasma generating device may resonate at the resonant frequency corresponding to each module. For example, the plasma generating device may include a first module having a first impedance and a second module having a second impedance, and may resonate at a first frequency corresponding to the first module and a second frequency corresponding to the second module.

[0086] According to an embodiment, the plasma generating device can perform different functions depending on the frequency of the applied power. For example, the plasma generating device can perform an initial discharge to promote the initial generation of plasma when power is supplied at a first frequency. Alternatively, the plasma generating device can perform a main discharge to continuously generate and maintain plasma when power is supplied at a second frequency different from the first frequency.

[0087] The plasma generating device may be configured such that the configuration in which the power is transmitted varies depending on the frequency of the applied power. When the power is supplied at a first frequency, the plasma generating device may supply more power to the first module than to the second module. When the power is supplied at a second frequency, the plasma generating device may supply more power to the second module than to the first module.

[0088] In the following, several embodiments of the plasma generating device including the above-mentioned power supply unit and plasma generating unit will be described.

[0089] 2.2 Configuration of the plasma generation device 2.2.1 Overview 3 is a diagram for explaining a plasma generating apparatus according to an embodiment. Referring to FIG. 3, the plasma generating apparatus according to an embodiment may include a variable frequency RF power supply 101 and a plasma generating unit that generates plasma by receiving power from the RF power supply 101. Referring to FIG. 3, the plasma generating unit may include a dielectric tube 210, gas tubes 211 and 213 located in the dielectric tube 210, and an antenna 220 that is disposed around the dielectric tube 210 and receives power from the RF power supply 101 to form an induction electric field and generate plasma in the dielectric tube 210. The plasma generating apparatus may further include an auxiliary gas supply nozzle 250.

[0090] The RF power source 101 can change the driving frequency within a variable frequency range. The RF power source 101 can have a variable frequency range of several hundred kHz to several tens of MHz and / or a power of several tens of kW or more. For example, the RF power source 101 can be an AC power source providing power at a frequency within a range of 100 kHz to 5 MHz.

[0091] According to an embodiment, the frequency of the RF power source 101 may be differently applied depending on the form of the antenna module. For example, the frequency of the RF power source may vary depending on the spacing of the capacitors included in the antenna module. For example, an RF power source having a maximum frequency of several MHz or several tens of MHz may be used depending on the spacing of the capacitors included in the antenna module.

[0092] The RF power supply 101 can change the drive frequency to perform impedance matching. The RF power supply 101 can change the drive frequency to operate the plasma generating unit in a resonant state.

[0093] The RF power source 101 may include a rectifier that converts commercial AC power into DC power, a controller that provides switching signals to control the driving frequency and power, and an inverter that converts the DC power into RF power based on the switching signal of the controller.

[0094] The dielectric tube 210 may be prepared in the form of a cylindrical tube. The outer diameter of the dielectric tube 210 may be several centimeters to several tens of centimeters. The inner diameter of the dielectric tube 210 may be several millimeters to several centimeters smaller than the outer diameter.

[0095] The dielectric tube 210 may be made of a non-conductive material such as ceramic (e.g., alumina or AlN), sapphire, quartz, or the like.

[0096] The dielectric tube 210 can provide a discharge region where plasma is located. The pressure inside the dielectric tube 210 can be adjusted to be different from the outside. The pressure inside the dielectric tube 210 can be adjusted to a very low pressure conforming to a vacuum, a low pressure of a few millitorr, or a normal pressure above atmospheric pressure, as required.

[0097] The gas tubes 211 and 213 can provide a path for supplying gas to the dielectric tube 210 and the inside of the dielectric tube 210. The gas tubes 211 and 213 can suppress contact of plasma with the inner wall of the dielectric tube 210 and ensure plasma stability.

[0098] There may be one or more gas tubes 211, 213. The gas tubes may include a first gas tube 211 and a second gas tube 213. The first gas tube 211 and the second gas tube 213 may have a concentric structure. The first gas tube 211 may provide an input path for a first gas (e.g., a gas for reaction, such as methane gas). The second gas tube 213 may provide an input path for a second gas (e.g., a gas mainly composed of carbon dioxide) having a different composition from the first gas.

[0099] The first gas tube 211 and the second gas tube 213 can provide a swirl flow. For example, the first gas tube 211 can provide an inner swirl flow and the second gas tube 213 can provide an outer swirl flow.

[0100] The antenna module 220 is supplied with power from the RF power source 101 and is capable of inducing plasma discharge inside the dielectric tube 210. The antenna module 220 is supplied with AC power from the RF power source 101 and is capable of generating inductively coupled plasma inside the dielectric tube 210. The antenna module 220 will be described in more detail in the electrode breakdown section below using a more detailed example.

[0101] The auxiliary gas supply nozzle 250 can supply auxiliary gas into the dielectric tube 210. The auxiliary gas supply nozzle 250 can be located close to the other end of the dielectric tube 210 opposite to the end where gas is introduced. The auxiliary gas supply nozzle 250 is disposed around the periphery of the dielectric tube 210, and may be disposed between the antenna module 220 and the gas exhaust port (the outlet of the dielectric tube 210).

[0102] The plasma generating apparatus may further include a safety case 190 for encasing the dielectric tube 210 and the antenna module 220 and isolating them from external influences while ensuring safety.

[0103] 2.2.2 DC power supply and electrodes The plasma generating apparatus according to an embodiment may include a DC power source that applies a high DC voltage, and a DC electrode (ignition electrode) that generates a capacitively coupled plasma discharge in a dielectric tube when the high DC voltage is applied. In particular, in the case of a plasma generating apparatus used for atmospheric pressure plasma discharge, inductively coupled plasma discharge is more difficult than low pressure plasma discharge, but the initial discharge can be assisted by providing a seed charge using the ignition electrode, thereby further improving discharge stability.

[0104] The plasma generating device may include one or more discharge electrodes that induce a discharge inside the dielectric tube. The plasma generating device may apply a DC voltage to the discharge electrodes to induce a capacitively coupled discharge, e.g., a localized streamer discharge, inside the dielectric tube. The plasma generating device may apply a DC voltage to the discharge electrodes to provide a seed charge inside the dielectric tube.

[0105] FIG. 4 is a diagram for explaining a discharge electrode according to an embodiment.

[0106] 4(a), a plasma generating device according to an embodiment may include one or more electrodes that are located around the antenna module 220 to generate plasma discharge and are connected to a DC power source. The plasma generating device may include a first electrode 231 located above the antenna module 220 and a second electrode 233 located below the antenna module 220.

[0107] Referring to FIG. 4(b), the plasma generating device may include a first electrode 231 located on the outer surface of the dielectric tube and located above the induction coil 221 of the antenna module 220, and a second electrode 233 arranged to surround the outer surface of the dielectric tube and located below the induction coil 221. Referring to FIG. 4(b), the first electrode 231 may be in the form of a square plate. The second electrode 233 may be "C" shaped. Alternatively, the second electrode 233 may include a plurality of slits. In order to prevent vortex currents from flowing in the second electrode 233 due to the influence of the induction electric fields E1 and E2 formed by the induction coil, the second electrode 233 may have an open loop structure that does not completely surround the outer wall of the dielectric tube.

[0108] The DC power supply can apply a positive high voltage to the first electrode 231 and a negative high voltage to the second electrode 233. When a high voltage pulse is applied between the first electrode 231 and the second electrode 233 by the DC power supply, a capacitively coupled plasma discharge, for example a vertical streamer discharge, can occur between the first electrode 231 and the second electrode 233.

[0109] FIG. 5 is a diagram for explaining a power supply according to an embodiment.

[0110] Referring to (a) of FIG. 5, the DC power supply includes an AC-DC converter 111 that converts commercial AC power into a DC voltage, a high-voltage pulse generator 113 that generates a positive DC high-voltage pulse via the DC voltage, and a controller 112 that controls the high-voltage pulse generator.

[0111] FIG. 5(b) is a diagram for explaining one embodiment of the high-voltage pulse generator explained in FIG. 5(a).

[0112] 5(b), the high voltage pulse generator 113 according to an embodiment may include a first transformer 113a including a primary coil for receiving a DC voltage from an AC-DC converter and a secondary coil for generating a positive DC high voltage pulse, a first power transistor 113b connected to the primary coil of the first transformer 113a, a second transformer 113c including a primary coil for receiving a DC voltage from the AC-DC converter and a secondary coil for generating a negative DC high voltage pulse, and a second power transistor 113d connected to the primary coil of the second transformer. The control unit 112 may control the gates of the first power transistor 113b and the second power transistor 113d. One end of the secondary coil of the first transformer 113a is grounded, and the other end of the secondary coil of the first transformer 113a may output a positive DC high voltage pulse Vo1. One end of the secondary coil of the second transformer 113c is grounded, and the other end of the secondary coil of the second transformer 113c can output a negative DC high-voltage pulse Vo2.

[0113] The DC voltage Vin may be a direct current power supply of 12 to 24 V. The control unit 112 may synchronously control the on-time and repetition frequency of the first power transistor 113b and the second power transistor 113d. The voltage of the DC high voltage pulse may be several tens of kV, for example, 10 to 50 kV. The repetition frequency of the DC high voltage pulse may be several kHz to several tens of kHz, for example, 10 kHz to 100 kHz.

[0114] FIG. 6 is a diagram for explaining a discharge electrode according to another embodiment.

[0115] Referring to FIG. 6(a), a plasma generating device according to an embodiment may include one electrode 231 connected to a DC power supply 110 and positioned around an antenna module 220 for generating a plasma discharge.

[0116] The plasma generating apparatus can apply a high voltage to the electrode 231 via the DC power supply 110 to generate a capacitive coupling discharge between the electrode 231 and a surrounding object (e.g., a metal object located inside / outside the dielectric tube). The plasma generating apparatus can apply a high voltage to the electrode 231 via the DC power supply 110 to generate a capacitive coupling discharge between the electrode 231 and the gas tube 211, which is located in the dielectric tube and grounded, and the electrode 231. The plasma generating apparatus can generate a discharge between the gas tube 211 and the electrode 231 to provide a seed charge.

[0117] 6(b), the plasma generating device may include an electrode 231 located on the outer surface of the dielectric tube and above the induction coil 221 of the antenna module 220. The electrode 231 may be in the form of a square plate. The plasma generating device may apply a positive high voltage to the square plate-shaped electrode 231 located on the outer surface of the dielectric tube via a DC power source to induce a discharge between the gas tube 211, which is located in the dielectric tube and grounded, and the electrode 231. When a high voltage pulse is applied to the electrode 231 by the DC power source, a capacitively coupled plasma discharge, for example, a streamer discharge, may occur between the electrode 231 and the gas tube 211.

[0118] Fig. 7(a) is a diagram for explaining a power supply according to one embodiment. Fig. 7(b) is a diagram for explaining one embodiment of the high-voltage pulse generator explained in Fig. 7(a). In the power supply and high-voltage pulse generator in Fig. 7(a) and (b), the contents explained in Fig. 5 can be similarly applied unless otherwise specified.

[0119] 7(b), the high voltage pulse generator 113 according to an embodiment may include a transformer 113e including a primary coil for receiving a DC voltage from an AC-DC converter and a secondary coil for generating a positive DC high voltage pulse, and a transistor 113f connected to the primary coil of the transformer 113e. The control unit 112 may control a gate of the transformer 113e. One end of the secondary coil of the transformer 113f is grounded, and the other end of the secondary coil of the transformer 113f may output a positive DC high voltage pulse Vout.

[0120] 2.2.3 Induction electrode The plasma generating device may include one or more induction electrodes that can induce a discharge inside the dielectric tube. The plasma generating device may include one or more antenna modules that induce an inductively coupled plasma discharge when powered by an RF power source. The antenna modules may operate differently depending on their configuration and the frequency of the input power signal. In the following, the antenna modules are described in several embodiments.

[0121] 2.2.3.1 First type of antenna module 8 is a diagram for explaining the configuration of an antenna module according to an embodiment. Referring to FIG 8, an antenna module 223 according to an embodiment may include a first capacitor 223a, an induction coil 223b, and a second capacitor 223c.

[0122] The first capacitor 223a may be connected between one end of the induction coil 223b and the RF power source, and the second capacitor 223c may be connected between the other end of the induction coil 223b and the RF power source. The first capacitor 223a and the second capacitor 223c may have the same capacitance.

[0123] The induction coil 223b may be located between the first capacitor 223a and the second capacitor 223c. The induction coil 223b may be a solenoid coil having a multi-layer structure. The induction coil 223b may be a solenoid coil wound in multiple layers on the outer surface of the dielectric tube. The unit turns constituting the induction coil 223b may be wound to form a reinforcing and interfering magnetic field within the dielectric tube in response to an AC power source. The induction coil 223b may be a solenoid coil wound in one direction on the outer surface of the dielectric tube.

[0124] The induction coil 223b may be a tightly wound solenoid coil to maximize the number of turns per unit length of the dielectric tube. Although simply shown in Figure 5, the induction coil 223b may be a solenoid coil having a greater number of turns than that shown in Figure 8. For example, the induction coil 223b may be a three-layer structure including an inner solenoid coil, a middle solenoid coil, and an outer solenoid coil connected together.

[0125] The induction coil 223b may have a pipe shape through which a refrigerant can flow. The induction coil 223b may be prepared as a copper pipe. The cross section of the induction coil 223b may be prepared as a circle or a square.

[0126] The first capacitor 223a, the induction coil 223b, and the second capacitor 223c are connected in series and can resonate at a first frequency, which can be determined by the capacitance C1 of each of the first capacitor 223a and the second capacitor 223c and the inductance L1 of the induction coil 223b.

[0127] FIG. 9 is a diagram for explaining the operation of the antenna module illustrated in FIG. 8 at the resonant frequency.

[0128] 9, the antenna module may resonate at a first frequency determined by the capacitance C1 of the first capacitor 223a and the second capacitor 223c, respectively, and the inductance L1 of the induction coil 223b. When powered at the first frequency, the first capacitor 223a and the second capacitor 223c may induce a voltage drop opposite to the induction coil 223b such that the magnitude of the voltage Va induced across the induction coil 223b is minimized.

[0129] In a resonant state, the first capacitor 223a and the second capacitor 223c can cancel the reactance of the induction coil 223b. The plasma generating device can perform impedance matching by supplying power to the antenna module at a first frequency that causes the reactance of the induction coil 223b to be cancelled by the first capacitor 223a and the second capacitor 223c. The first capacitor 223a and the second capacitor 223c can be arranged symmetrically with respect to the induction coil 223b to reduce the voltage applied across the induction coil 223b.

[0130] 2.2.3.2 Second type of antenna module Figure 10 is an operation for explaining the configuration of an antenna module according to some embodiments. Figure 10 (a), (b) and (c) are diagrams for explaining antenna modules prepared so that the number of turns of the induction coil per unit length of the dielectric tube is different. The antenna modules shown in Figure 10 (a), (b) and (c) can each exhibit different discharge characteristics.

[0131] The plasma generating device can exhibit characteristics of less energy loss and narrower discharge window as the number of turns per unit length of the dielectric tube of the induction coil constituting the antenna module is smaller, whereas the plasma generating device can exhibit characteristics of wider discharge window and more advantageous for maintaining discharge as the number of turns per unit length of the dielectric tube of the induction coil constituting the antenna module is larger, but higher energy loss.

[0132] Referring to Fig. 10(a), the antenna module 235 can include a unit coil 235b wound with one turn per layer, and an interlayer capacitor 235a connecting the unit coils of each layer. The 12*1 turn antenna module 235 shown in Fig. 10(a) can be configured so that all antenna unit turns are in close contact with the outer surface of the dielectric tube. The antenna module 235 shown in Fig. 10(a) has a small number of turns per unit length (N / L), which can have a relatively low discharge efficiency, less energy loss, and a relatively high process performance.

[0133] Referring to FIG. 10(b), the antenna module 237 may include unit coils 237b wound with two turns per layer, and interlayer capacitors 237a connecting the unit coils of each layer. The 6*2 turn antenna module 237 shown in FIG. 10(b) has a larger number of turns per unit length (N / L) than the antenna module 235 shown in FIG. 10(a). The antenna module 237 shown in FIG. 10(b) may exhibit higher discharge efficiency than the antenna module 235 shown in FIG. 10(a). The discharge efficiency may be proportional to the number of turns per unit length (N / L). For example, the antenna module 237 shown in FIG. 10(b) may have twice the discharge efficiency of the antenna module 235 shown in FIG. 10(a).

[0134] Referring to Fig. 10(c), the antenna module 239 may include unit coils 239b wound with three turns per layer, and interlayer capacitors 239a connecting the unit coils of each layer. The antenna module 239 has a larger number of turns per unit length (N / L) than the antenna modules 235 and 237 of Fig. 10(a) and (b), and may have a higher discharge efficiency than the antenna modules 235 and 237 of Fig. 10(a) and (b). The antenna module 239 may have a characteristic that makes it easier to maintain discharge under gas conditions that are difficult to discharge, compared to the antenna modules 235 and 237 of Fig. 10(a) and (b).

[0135] The antenna modules shown in Figures 10(a), (b) and (c) may have different inductances. The antenna module 235 in (a) may have a first inductance, the antenna module 237 in (b) may have a second inductance and the antenna module 239 in (c) may have a third inductance. The second inductance may be greater than the first inductance and the third inductance may be greater than the second inductance.

[0136] Fig. 11 is a diagram for explaining the operation at the resonant frequency of the antenna module illustrated in Fig. 10. In the following, voltage distribution at the resonant frequency of the antenna module illustrated in (c) of Fig. 10 will be described with reference to Fig. 11.

[0137] Referring to FIG. 11, an antenna module according to one embodiment may include a plurality of unit coils 239b, interlayer capacitors 239a arranged between the plurality of unit coils, and terminal capacitors 239c (not shown) respectively connected to the unit coils located at the upper and lower ends.

[0138] The antenna module can resonate at a second frequency determined by the capacitance of the interlayer capacitor 239a, the inductance of the unit coil 239b, and the capacitance of the end capacitor 239c.

[0139] In order to minimize the voltage applied to the unit coil 239b, the capacitance of the end capacitor 239c can be determined to be twice the capacitance of the interlayer capacitor 239a. At this time, the antenna module can resonate at a second frequency determined by the capacitance C2 of the interlayer capacitor 239a, the inductance L2 of the unit coil 239b, and the capacitance 2*C2 of the end capacitor 239c. Referring to Fig. 11, the interlayer capacitor 239a can be represented as a pair of virtual capacitors connected in series, each having a capacitance of 2*C2.

[0140] In a resonant state, the interlayer capacitors 239a and the terminal capacitors 239c can reduce the voltage applied to the terminals of the unit coils 239b. When power is provided to the antenna module at the second frequency, the interlayer capacitors 239a and the terminal capacitors 239c can induce a voltage drop inverse to the induction coil 239b such that the magnitude of the voltage Vb induced across the induction coil 239b is minimized.

[0141] The interlayer capacitor 239a and the end capacitor 239c can cancel the reactance of the induction coil 239b. The plasma generating device can perform impedance matching by supplying power to the antenna module at a second frequency so that the reactance of the induction coil 239b is canceled by the interlayer capacitor 239a and the end capacitor 239c. The end capacitor 239c can be arranged symmetrically with respect to the induction coil 239b to reduce the voltage applied to both ends of the induction coil 239b. The interlayer capacitor 239a can be arranged between each layer of the induction coil 239b to minimize the interlayer voltage difference between the unit induction coils 239b and prevent capacitive coupling.

[0142] As the reactance of the induction coil 239b is cancelled by the interlayer capacitor 239a and / or the end capacitor 239c, the voltages in the unit coils 239b may have a corresponding relationship. For example, in a resonant state, the voltage between one end and the other end of one unit coil 239b may correspond to the voltage between one end and the other end of the other unit coil 239b. The potential at one end of one unit coil 239b may correspond to the potential at one end of the other unit coil 239b.

[0143] As a specific example, the antenna module may include a first unit coil (or unit turn) having one end and the other end, a first interlayer capacitor connected in series with the other end of the first unit coil, and a second unit coil having one end and the other end, the one end of which is connected in series with the first interlayer capacitor. When the antenna module is in a resonant state, the potential at one end of the first unit coil may correspond to the potential at one end of the second unit coil. When the antenna module is in a resonant state, the voltage between one end and the other end of the first unit coil may correspond to the potential between one end and the other end of the second unit coil. When the antenna module is in a resonant state, the voltage between one end and the other end of the first unit coil may correspond to the voltage between one end of the first unit coil and the other end of the second unit coil.

[0144] Fig. 12 is a diagram for explaining the structure of the antenna module illustrated in Fig. 10(c). The antenna module according to one embodiment may include a plurality of unit coils 239b and an interlayer capacitor 239c disposed between the plurality of unit coils. Fig. 12 shows a unit coil 239b of the antenna module according to one embodiment.

[0145] The unit coil 239b may include a plurality of turns TU1, TU2, and TU3. The unit coil 239b may include a first end TE1, a first turn TU1 connected to the first end TE1, a first protruding portion PR1 connected to the first turn TU1, a second turn TU2 connected to the first protruding portion PR1, a second protruding portion PR2 connected to the second turn TU2, a third turn TU3 connected to the second protruding portion PR2, and a second end TE2 connected to the third turn TU3.

[0146] The unit coil 239b may have an open portion that is open in one direction (the x-axis direction in reference to FIG. 12). The first end TE1 and the second end TE2 of the unit coil 239b may form an open portion that is open in one direction.

[0147] Each turn TU1, TU2, TU3 may be arranged on the same plane. Each turn TU1, TU2, TU3 may have a predetermined central angle. The central angle of each turn may be 270 degrees or more. Each turn TU1, TU2, TU3 may be arranged to have the same central axis and may have different radii from each other.

[0148] Each of the protrusions PR1, PR2 may be provided in a U-shape, connecting turns of different radii. The first protrusion PR1 may connect one end of the first turn TU1 to one end of the second turn TU2.

[0149] The first end TE1 or the second end TE2 can be connected to the interlayer capacitor 239c or the end capacitor 239a. For example, the first end TE1 can be connected to the end capacitor 239a, and the second end TE2 can be connected to the interlayer capacitor 239c.

[0150] Meanwhile, the antenna module may include a plurality of unit coils 239b. The plurality of unit coils may be arranged rotated with respect to the central axis of the dielectric tube. For example, the first unit coil may be arranged such that the protrusion PR faces a first direction with respect to the central axis of the dielectric tube, and the second unit coil may be arranged such that the protrusion PR faces a second direction with respect to the central axis of the dielectric tube, and the first direction and the second direction may form a predetermined angle with respect to the central axis of the dielectric tube. For example, the predetermined angle may be 90 degrees.

[0151] 13 is a block diagram illustrating an RF power supply according to an embodiment. Referring to FIG. 13, an RF power supply device 1000 according to an embodiment may include an AC power supply 1100, a power supply device 1200, and a load 1400.

[0152] The AC power source 1100 may be a conventional 60 Hz power source used in a home or industrial setting. The load 1400 may be an electrical or electronic device used in a home or industrial setting. The load 1400 may be a plasma generating device as described herein.

[0153] The power supply device 1200 can convert the first AC power source into a second AC power source and supply it to the load 1400. For example, the second AC power source has a driving frequency of several hundred kHz to several tens of MHz and can provide power of several kW or more. The power supply device 1200 can include a rectifier 1210, a capacitor 1220, an inverter 1230, an impedance matching circuit 1300, and a controller 1250.

[0154] The rectifier 1210 can convert the output of the AC power supply 1100 into a DC power supply. The rectifier 1210 can supply the DC power supply between a ground node GND and a power supply node VP. The capacitor 1220 may be connected between the power supply node VP and the ground node GND. The capacitor 1220 can discharge the AC component transmitted to the power supply node VP to the ground node GND.

[0155] The inverter 1230 may receive DC power from a power supply node VP and a ground node GND. The inverter 1230 may receive a switching signal SW from the controller 1250. The inverter 1230 may convert the DC power into a second AC power in response to the switching signal SW. The second AC power may be supplied to the load 1400 via an impedance matching circuit 1300. The impedance matching circuit 1300 may provide impedance matching to the impedance of the load 1400.

[0156] The controller 1250 may transmit a switching signal SW to the inverter 1230. The controller 1250 may control the switching signal SW so that the inverter 1230 converts the DC power source into a second AC power source. The controller 1250 may control the switching signal SW so as to adjust the amount of power supplied from the inverter 1230 to the load 1400.

[0157] 3. Operation and control method of plasma generating device According to one embodiment of the invention presented in this specification, it is possible to provide a plasma generating device having a plurality of discharge modes, which generates plasma discharges with different characteristics in each mode.

[0158] For example, the plasma generating device can have a first discharge mode with less energy loss and a second discharge mode for discharging a gas that is more difficult to discharge. Also, for example, the plasma generating device can have a first discharge mode that is advantageous for initial discharge of plasma and a second discharge mode that is advantageous for main discharge with high energy efficiency.

[0159] The plasma generating device can change the plasma discharge mode by switching one or more antennas exhibiting different characteristics as needed. Antenna switching can be interpreted in a broader sense than physical switching of a circuit. For example, the plasma generating device can switch antennas by selectively applying the frequency of power transmitted to multiple antenna modules to change the antenna module that operates primarily. Or, the plasma generating device can switch antennas by providing power via different power supply modules or at different driving frequencies as needed to change the discharge characteristics of the antenna modules.

[0160] According to the invention described herein, it is possible to provide a plasma generating device that can operate in a wider variety of environments and has a wider operation window. According to the invention described herein, it is possible to provide a plasma generating device that performs plasma discharge even when the impedance measured at the antenna is different under various discharge conditions (type of gas, flow rate, pressure, rf power). According to the invention described herein, it is possible to extend the discharge range that has been limited by a predetermined matching range or configuration characteristics other than the antenna, using a plasma generating device including a single antenna module or a single power supply module.

[0161] 3.1 Single antenna 3.1.1 Plasma generation process with one antenna 14 is a diagram for explaining a plasma discharge process when the plasma generating device includes one antenna module 220 and an RF power supply device 120. The RF power supply device 120 can include one or more power supply modules. The RF power supply device 120 can include one or more power supply modules having different output frequency bands.

[0162] The mode-changing plasma discharge process for one antenna module will be described below with reference to FIG.

[0163] Referring to FIG. 14, when the plasma generating device includes one antenna module 220 and one variable frequency RF power supply 120, the discharge mode can be changed by changing the frequency of the power signal provided to the antenna module 220 using the variable frequency power supply 120.

[0164] Referring to (a) of Figure 14, when the operation mode of the plasma generating device is the first mode, the plasma generating device can transmit a power signal having a first frequency f1 to the antenna module 220 via the power supply device 120 to induce a plasma discharge inside the dielectric tube.

[0165] When the plasma generating device is in a first mode of operation, the plasma generating device can generate a first electric field inside the dielectric tube, the first electric field can be a vertical electric field aligned with an axial direction of the dielectric tube or an azimuthal electric field aligned with a circumferential direction of the dielectric tube.

[0166] According to an embodiment, when the operation mode of the plasma generating apparatus is the first mode, the plasma generating apparatus may form a vertical electric field E1 by transmitting a power signal having a first frequency f1 to the antenna module 220. The plasma generating apparatus may form the vertical electric field E1 through the antenna module 220 to induce capacitively coupled plasma generation inside the dielectric tube.

[0167] According to an embodiment, the plasma generating apparatus may induce capacitively coupled plasma generation inside the dielectric tube when the operation mode is the first mode. When the operation mode is the first mode, the plasma discharge induced inside the dielectric tube of the plasma generating apparatus may be mainly a capacitively coupled plasma discharge or a discharge by the capacitively coupled mode (E-mode).

[0168] According to an embodiment, when the operation mode of the plasma generating apparatus is the first mode, the plasma generating apparatus may transmit a power signal having a first frequency f1 to the antenna module 220 to form an azimuthal electric field E2. The plasma generating apparatus may form the azimuthal electric field E2 through the antenna module 220 to induce inductively coupled plasma generation inside the dielectric tube. When the operation mode of the plasma generating apparatus is the first mode, the plasma generating apparatus may form the azimuthal electric field E2 having a first intensity.

[0169] According to an embodiment, the plasma generating apparatus may induce inductively coupled plasma generation inside the dielectric tube when the operation mode is the first mode. When the operation mode is the first mode, the plasma discharge induced inside the dielectric tube of the plasma generating apparatus may be mainly an inductively coupled plasma discharge or a discharge by an inductively coupled mode (H-mode).

[0170] 14(b), when the operation mode of the plasma generating device is the second mode, the plasma generating device can transmit a power signal having a second frequency f2 to the antenna module 220 via the power supply device 120 to induce plasma discharge inside the dielectric tube. The second frequency f2 may be different from the first frequency f1. The second frequency f2 may differ from the first frequency f1 by a certain value or more. The second frequency f2 may be higher or lower than the first frequency f1 by a certain value (e.g., 0.2 MHz) or more.

[0171] When the operation mode is the second mode, the plasma generating device can transmit a power signal of a second frequency f2 to the antenna module 220 to induce an azimuthal electric field E3. The plasma generating device can form the azimuthal electric field E3 via the antenna module 220 to induce an inductively coupled plasma discharge inside the dielectric tube. When the operation mode is the second mode, the plasma generating device can form the azimuthal electric field E3 having a second intensity. The second intensity may be greater or less than the intensity of the azimuthal electric field E2 in the first mode.

[0172] When the operation mode of the plasma generating device is the second mode, the plasma discharge induced in the dielectric tube of the plasma generating device can be mainly an inductively coupled plasma discharge or a discharge by the inductively coupled mode (H-mode).

[0173] Fig. 15 is a diagram for explaining the change in plasma discharge mode in relation to the current a flowing through the antenna module, the voltage b across the antenna module, the voltage c across the unit coil, and the frequency d of the power signal. In Fig. 15, the current and voltage graphs show magnitudes.

[0174] In the following, with reference to FIG. 15, a description will be given based on a case in which the antenna module 220 includes unit coils constituting a unit layer and interlayer capacitors disposed between the unit coils as illustrated in FIG.

[0175] Referring to FIG. 15, when the plasma generating apparatus operates in a first mode, the power supply device 120 provides a power signal having a first frequency f1 to the antenna module 220, and a first current I1 can flow through the antenna module.

[0176] When the operation mode of the plasma generating device is the first mode, the voltage across the induction coil included in the antenna module may be a first voltage V1. When the operation mode is the first mode, the voltage across the unit coil (coil that constitutes a unit layer) constituting the induction coil included in the antenna module may be a third voltage V3.

[0177] Referring to FIG. 15, when the plasma generating apparatus operates in the second mode, the power supply device 120 provides a power signal having a second frequency f2 to the antenna module 220, and a second current I2 can flow through the antenna module.

[0178] When the operation mode of the plasma generating device is the second mode, the voltage across the induction coil may be a second voltage V2. When the operation mode is the second mode, the voltage across the unit coil constituting the induction coil included in the antenna module may be a fourth voltage V4.

[0179] The second frequency f2 may be less than the first frequency f1. When the second frequency f2 is less than the first frequency f1, the second current I2 may be greater than the first current I1. When the second frequency f2 is less than the first frequency f1, the second voltage V2 may be less than the first voltage V1. When the second frequency f2 is less than the first frequency f1, the third voltage V3 may be greater than the fourth voltage V4.

[0180] When the operation mode is the second mode, the voltage V2 across the coil of the antenna module 220 may be smaller than the voltage V1 across the coil of the antenna module in the first mode. When the operation mode is the second mode, the antenna module may have discharge characteristics with higher energy efficiency than the first mode.

[0181] The second frequency may be a resonant frequency of the antenna module 220. When the operation mode is changed to the second mode, the antenna module 220 may be impedance-matched and resonate at the second frequency.

[0182] Meanwhile, according to one embodiment, the plasma discharge state may change with time. The operation mode of the plasma generating device may be changed according to the change in the plasma discharge state. For example, if the plasma generating device has a first discharge mode that is favorable for initial discharge of plasma and a second discharge mode that is favorable for main discharge with high energy efficiency, the operation mode of the plasma generating device may be changed according to the change in the plasma discharge state.

[0183] For example, plasma discharge in the first mode can be mainly performed by the charge-coupled mode. Then, as the plasma is sufficiently generated by the charge-coupled mode, a second electric field E2, which is an azimuthal inductive electric field, can be formed in the dielectric tube. When the second electric field E2 is formed, plasma can be generated by the inductively coupled plasma discharge or the inductively coupled mode (H-mode).

[0184] The plasma generating device can change the operation mode in response to a change in the plasma discharge state. Referring to (a) of Fig. 14, the plasma generating device can transmit a power signal having a first frequency f1 to the antenna module 220 via the power supply device 120, and change the operation mode in response to a transition of the plasma discharge state.

[0185] The plasma generating device can sense changes in the plasma discharge state.

[0186] The plasma generating device can include a sensor device that acquires the current flowing through the antenna module 220 and / or the voltage applied to both ends of the antenna module 220. The plasma generating device can acquire the current flowing through the antenna module 220 and / or the voltage applied to both ends of the coil of the antenna module 220, acquire a change in the plasma discharge state, and change the drive frequency and / or the operation mode of the power supply device 120.

[0187] The plasma generating apparatus may include a sensor device that acquires a change in a voltage or current signal from the RF power supply apparatus described above in relation to Fig. 13. For example, the plasma generating apparatus may include a sensor device that acquires a voltage (voltage between VP and GND) applied across the capacitor 1220 of the power supply apparatus 1200 of Fig. 13 and / or a current (current flowing from VP to the inverter). The plasma generating apparatus may acquire a change in the discharge state based on a change in the voltage or current signal acquired from the RF power supply apparatus described above.

[0188] As the plasma discharge condition changes, the current through the antenna module 220 and / or the voltage applied across the antenna module 220 may be modified. For example, as the predominant plasma discharge condition changes from capacitively coupled plasma discharge to inductively coupled plasma discharge, the current through the antenna module 220 and / or the voltage applied across the antenna module 220 may be reduced.

[0189] The plasma generating device may change its operating mode to a second mode in response to a reduction in the current through the antenna module 220 and / or the voltage applied across the antenna module 220 .

[0190] According to an embodiment, the plasma discharge state by the plasma generating device may have a capacitive coupling mode, a transfer mode, and an inductive coupling mode. When the plasma generating device operates in a first mode, the plasma discharge state may transition from the capacitive coupling mode to the transfer mode. When the plasma discharge state transitions to the transfer mode, the operation mode of the plasma generating device may be changed from the first mode to a second mode. When the operation mode is changed to the second mode, the plasma discharge state may transition from the transfer mode to the inductive coupling mode.

[0191] Alternatively, the plasma discharge state may have a first inductively coupled mode and a second inductively coupled mode. When the operation mode of the plasma generating device is changed from the first mode to the second mode, the plasma discharge state may be changed from the first inductively coupled plasma discharge to the second inductively coupled plasma discharge.

[0192] Fig. 16 is a diagram for explaining a voltage change due to an operation mode change in a plasma generating apparatus according to an embodiment. Fig. 16 is a diagram for explaining a voltage distribution according to the position of the coil of the antenna module in the plasma generating apparatus according to an embodiment. In the following, the voltage change at both ends of the antenna module and at both ends of the unit coil due to an operation mode change will be described with reference to Figs. 14 to 16.

[0193] The voltage distribution illustrated in FIG. 16 will be described based on an antenna module including four unit induction coils arranged on different planes and interlayer capacitors arranged between each induction coil, such as the antenna module illustrated in FIG. 10(c).

[0194] 16(a) is a diagram for explaining a voltage distribution according to a position of the antenna module according to an embodiment when the plasma generating device according to an embodiment is in a first mode. When the operation mode is the first mode, the plasma generating device can use a first frequency as a driving frequency.

[0195] Referring to FIG. 16(a), when the operation mode of the plasma generating apparatus according to the embodiment is the first mode, the voltage between both ends of the antenna module having a total length Lt may be a first voltage V1. When the operation mode is the first mode, the reactance cancellation of the induction coil due to the interlayer capacitor between the unit coils may be minimized. When the operation mode is the first mode, the plasma generating apparatus may be operated at a driving frequency of a first frequency such that the reactance cancellation is minimized, the voltage between both ends of the induction coil is maximized, and a capacitively coupled plasma discharge is induced. Preferably, the voltage between both ends of each unit coil constituting the antenna module having a total length Lt may be a value obtained by dividing the voltage between both ends of the antenna module by the number of unit coils.

[0196] However, the effect of the reactance of the interlayer capacitor may not be completely eliminated. In other words, although the voltage rise (or drop) in the induction coil is shown to occur continuously for convenience in Fig. 16, the reactance of the induction coil can be at least partially offset by the interlayer capacitor between the unit coils. That is, the voltage distribution in the first mode may appear similar to that shown in Fig. 16(b).

[0197] FIG. 16(b) is a diagram for explaining voltage distribution according to the position of the antenna module when the plasma generation device according to one embodiment is driven at a frequency between the first frequency and the second frequency.

[0198] 16(b), when the plasma generating device is in a transition state between the first mode and the second mode, or when the plasma generating device has a driving frequency between the first frequency and the second frequency, the voltage across the antenna module with the total length Lt may be smaller than the first voltage V1. In the transition state, the reactance of the induction coil is at least partially offset by the interlayer capacitor between the unit coils, and the voltage across the antenna module may be smaller than the first voltage V1.

[0199] When the operation mode is the first mode, the reactance cancellation of the induction coil due to the interlayer capacitor between the unit coils can be minimized. When the operation mode is the first mode, the plasma generating device can be operated at a driving frequency of a first frequency such that the reactance cancellation is minimized, the voltage across the induction coil is maximized, and a capacitively coupled plasma discharge is induced.

[0200] 16(c) is a diagram for explaining a voltage distribution according to a position of the induction coil when the plasma generating apparatus according to an embodiment is in the second mode. When the operation mode is the second mode, the driving frequency is the second frequency, and the antenna module may be in a resonant state with impedance matching at the second frequency. According to an embodiment, the plasma generating apparatus may change the operation mode to the second mode in response to the plasma discharge state changing to the transition mode.

[0201] 16(c), when the operation mode of the plasma generating apparatus according to the embodiment is the second mode, the voltage between both ends of the antenna module with the total length Lt may be a second voltage V2. The second voltage V2 may be smaller than the first voltage V1.

[0202] When the operation mode of the plasma generating device is the second mode, the interlayer capacitor of the antenna module can offset the voltage rise (or drop) across the antenna module. When the operation mode is the second mode, the voltage across the induction coil can be minimized. When the operation mode is the second mode, the interlayer capacitor and the end capacitor constituting the antenna module can offset the reactance of the induction coil. When the operation mode is the second mode, the plasma generating device can be operated at a drive frequency of the second frequency such that the voltage across the induction coil is maximized and an inductively coupled plasma discharge is induced.

[0203] Referring to FIG. 16(c), when the operation mode of the plasma generating apparatus according to the embodiment is the second mode, the voltage between both ends of the antenna module with the total length Lt may be the second voltage V2. Preferably, the voltage between both ends of the unit coil constituting the antenna module may be the second voltage V2, which is the same as the voltage between both ends of the antenna module. However, it may be difficult to reach a perfect resonance state due to the characteristics of the plasma generating apparatus and the limit of the power supply frequency resolution. In this case, the voltage distribution in the second mode may show a sawtooth shape in which the reactance of the induction coil rises (or falls) without being at least partially offset.

[0204] Meanwhile, in the above embodiment, the operation mode is changed to the second mode in response to the transfer of plasma in the first mode, but the operation mode may be changed in the reverse order. The plasma generating device may change the operation mode from the second mode described in relation to Fig. 14(b) to the first mode described in relation to Fig. 14(a).

[0205] 3.1.2 Two inverters with one antenna The plasma generating apparatus according to one embodiment may include one antenna module and one or more RF power supply modules. The plasma generating apparatus described below may operate in the same manner as the above-mentioned embodiment unless otherwise specified.

[0206] The RF power module may be an AC power source having a given output frequency range and matching range. Different RF power modules may have different output frequency ranges and matching ranges.

[0207] 17 is a diagram for explaining a plasma generation apparatus according to an embodiment. Referring to (a) and (b) of FIG. 17, the plasma generation apparatus according to an embodiment can include a first power supply module 101, a second power supply module 102, and an antenna module 201.

[0208] The first power supply module 101 may have a first driving frequency range. The second power supply module 102 may have a second driving frequency range that is at least partially different from the first driving frequency range. The first power supply module 101 may be driven at a first frequency within the first driving frequency range. The second power supply module 102 may be driven at a second frequency within the second driving frequency range.

[0209] According to one embodiment, the first power module 101 may include a first matching element. The second power module 102 may include a second matching element having a different impedance than the first matching element. Each matching element may increase the power transfer efficiency of each power module to the antenna module. Also, each matching element may function as a filter at a frequency band other than a resonant frequency.

[0210] 18 is a diagram for explaining a plasma generation apparatus according to an embodiment. Referring to FIG. 18, the plasma generation apparatus according to an embodiment may include a first power supply module 101 including a first power supply unit P1 and a first matching element Z1, a second power supply module 102 including a second power supply unit P2 and a second matching element Z2, and an antenna module 201.

[0211] The first power module 101 includes a first matching element, and the first matching element and the antenna module 201 can resonate at a first frequency that is included in a first driving frequency range. The first matching element and the antenna module 201 can resonate at the first frequency that is determined by the impedance of the first matching element and the impedance of the antenna module 201.

[0212] The second power module 102 includes a second matching element, and the second matching element and the antenna module 201 can resonate at a first frequency within a first driving frequency range. The second matching element and the antenna module 201 can resonate at a second frequency determined by the impedance of the second matching element and the impedance of the antenna module 201.

[0213] 18, the plasma generating apparatus may further include an isolation element 130. The isolation element 130 may block signal transmission between a circuit on the second power supply module 102 side and a circuit on the first power supply module 101 side when the first power supply module 101 is in operation. The isolation element 130 may include a transformer. The isolation element 130 may include an isolation transformer such as a shielding transformer, an insulating transformer, or an interference blocking transformer. The isolation element 130 may include a switch.

[0214] Meanwhile, according to another embodiment, the antenna module 201 or the plasma generating device including the antenna module 201 may include a first matching element and a second matching element. The first matching element may be connected between the first power supply module 101 and the antenna module 201, and the second matching element may be connected between the second power supply module 102 and the antenna module 201. That is, although the above embodiment has been described based on the case where the matching element is included in the power supply module, the plasma generating system may be configured such that the plasma generating device or the antenna module includes one or more matching elements, and each matching element is connected to the antenna module and the power supply module.

[0215] A method for controlling a plasma generating device according to an embodiment includes a step of controlling the plasma generating device to a first mode via a first power supply module, and a step of controlling the plasma generating device to a second mode via a second power supply module. The above-mentioned contents can be applied to the first mode and the second mode.

[0216] FIG. 19 is a diagram for explaining a method for controlling a plasma generating apparatus according to an embodiment.

[0217] Referring to FIG. 19, a method for controlling a plasma generating apparatus according to one embodiment may include step S110 of providing power at a first frequency to an antenna module via a first power supply module, and step S130 of providing power at a second frequency to the antenna module via a second power supply module.

[0218] The step S110 of providing power at a first frequency to the antenna module via a first power source module may include providing power to the antenna module at the first frequency, which is a resonant frequency determined by the impedance of a first matching element disposed between the first power source module and the antenna module and the impedance of the antenna module, whereby the power distribution of the antenna module may appear as illustrated in connection with FIG.

[0219] Alternatively, the step S110 of providing power at a first frequency to the antenna module via the first power module may include providing a power signal to the antenna module at a first frequency different from a resonant frequency determined by the impedance of the antenna module, whereby the power distribution of the antenna module may appear as illustrated in connection with FIG.

[0220] Step S110 of providing power at a first frequency to the antenna module via a first power supply module may include providing a power signal at the first frequency to the antenna module via the first power supply module to induce a capacitively coupled plasma discharge inside the dielectric tube.

[0221] Alternatively, step S110 of providing power at a first frequency to the antenna module via a first power supply module may include providing a power signal at the first frequency to the antenna module via the first power supply module to induce an inductively coupled plasma discharge via an induced electric field having a first strength inside the dielectric tube.

[0222] The step S130 of providing power at a second frequency to the antenna module via the second power module may include providing a power signal to the antenna module at the second frequency, which is a resonant frequency determined by the impedance of a second matching element disposed between the second power module and the antenna module and the impedance of the antenna module, whereby the voltage distribution of the antenna module may appear as illustrated in connection with (c) of FIG.

[0223] The step S130 of providing power at a second frequency to the antenna module via the second power module may include providing a power signal at the second frequency to the antenna module via the second power module to induce an inductively coupled plasma discharge inside the dielectric tube. The step S130 of providing a power signal at the second frequency to the antenna module via the second power module may include forming an induced electric field having a second strength inside the dielectric tube to induce an inductively coupled plasma discharge. The second strength may be greater or less than the first strength of the electric field induced by the first power module.

[0224] According to an embodiment, the method for controlling the plasma generating device may further include a step of acquiring a change in the power signal. The method for controlling the plasma device may include a step of acquiring a change in the current flowing through the antenna module or a change in the voltage across the antenna module (or a part of elements constituting the antenna module). The method for controlling the plasma device may include acquiring the above-mentioned change and controlling the first power supply module and / or the second power supply module based on the change. The method for controlling the plasma device may include acquiring the above-mentioned change and interrupting the operation of the first power supply module and starting the operation of the second power supply module based on the change. Alternatively, the method for controlling the plasma device may include acquiring the above-mentioned change and interrupting the operation of the second power supply module and starting the operation of the first power supply module based on the change.

[0225] 3.1.3 One antenna and one inverter The plasma generating apparatus according to one embodiment may include one antenna module and one variable frequency RF power supply module. The plasma generating apparatus described below may operate in the same manner as the above-mentioned embodiment unless otherwise specified.

[0226] 20A and 20B are diagrams for explaining a plasma generating apparatus according to an embodiment. Referring to (a) and (b) of FIG. 20, the plasma generating apparatus according to an embodiment may include a power supply module 103 and an antenna module 202.

[0227] The RF power supply module 101 may be an AC power source having a predetermined frequency tuning range. The power supply module 101 may provide power to the antenna module 202 with a resonant frequency of the antenna module 202 as a driving frequency.

[0228] A method for controlling a plasma generating device according to an embodiment includes a step of controlling the plasma generating device to a first mode via a power supply module, and a step of controlling the plasma generating device to a second mode via a power supply module. The above-mentioned contents can be applied to the first mode and the second mode.

[0229] FIG. 21 is a diagram for explaining a method of controlling a plasma generating apparatus according to an embodiment.

[0230] 21, a method for controlling a plasma generating apparatus according to an embodiment may include a step S210 of providing power at a first frequency to an antenna module via a power supply module, and a step S230 of providing power at a second frequency to the antenna module via the power supply module. The second frequency may be a resonant frequency of the antenna module.

[0231] The step S210 of providing power at a first frequency to the antenna module via the power supply module may include providing a power signal to the antenna module at a first frequency different from a resonant frequency determined by the impedance of the antenna module, whereby the voltage distribution of the antenna module may appear as illustrated in connection with FIG.

[0232] Step S210 of providing power at a first frequency to the antenna module via the power supply module may include providing a power signal at the first frequency to the antenna module via the power supply module to induce a capacitively coupled plasma discharge inside the dielectric tube.

[0233] The step S230 of providing power at a second frequency to the antenna module via the power module may include providing a power signal to the antenna module at the second frequency, which is a resonant frequency determined by the impedance of the antenna module, such that the voltage distribution of the antenna module may appear as illustrated in connection with FIG.

[0234] Step S230 of providing power at a second frequency to the antenna module via the power supply module may include providing a power signal at the second frequency to the antenna module via the power supply module to induce an inductively coupled plasma discharge inside the dielectric tube.

[0235] According to an embodiment, the method for controlling the plasma generating device may further include a step of acquiring a change in the power signal. The method for controlling the plasma generating device may include acquiring a change in the current flowing through the antenna module or a change in the voltage across the antenna module (or a part of the elements constituting the antenna module) and changing the driving frequency of the power supply module based on the change.

[0236] 3.1.4 Example of plasma generation device According to one embodiment, it is possible to provide a plasma generation device having a plurality of operation modes including a first mode and a second mode and performing plasma discharge. The plasma generation device can include a first power supply device capable of changing a frequency within a first frequency range, a second power supply device capable of changing a frequency within a second frequency range at least partially different from the first frequency range, a dielectric tube, and an antenna module including a first unit coil wound at least once around the dielectric tube, a second unit coil wound at least once around the dielectric tube, and a first capacitor connected in series between the first unit coil and the second unit coil.

[0237] When the operation mode of the plasma generating device is in a first mode, the antenna module can induce a first plasma discharge based on a power signal having a first frequency within a first frequency range, and when the operation mode is in a second mode, the antenna module can induce a second plasma discharge based on a power signal having a second frequency within a second frequency range, where the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency can correspond to a first resonant frequency determined by the first inductance and the first capacitance.

[0238] The first power supply may include a first matching element having a first impedance. When the operating mode is the first mode, the antenna module generates a first plasma discharge based on a power signal having a first frequency, and the first frequency may correspond to a first resonant frequency determined based on the first impedance, the first inductance, and the first capacitance.

[0239] The second power supply may include a second matching element having a second impedance. When the operating mode is the second mode, the antenna module generates a second plasma discharge based on the power signal having a second frequency, the second frequency being determined based on the second impedance, the first inductance, and the first capacitance and corresponding to a second resonant frequency different from the first resonant frequency.

[0240] The second resonant frequency may be higher than the first resonant frequency. In this case, when the operation mode is the first mode, a first voltage which is a voltage between one end of the first unit coil not connected to the first capacitor and one end of the second unit coil not connected to the first capacitor may be lower than a second voltage which is a voltage between one end of the first unit coil not connected to the first capacitor and one end of the second unit coil not connected to the first capacitor when the operation mode is the second mode.

[0241] When the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0242] The voltage across the antenna module when the operation mode is in the first mode may be less than the voltage across the antenna module when the operation mode is in the second mode.

[0243] The magnitude of the first current flowing through the antenna module when the operation mode is the first mode may be smaller than the magnitude of the second current flowing through the antenna module when the operation mode is the second mode.

[0244] When the operation mode is a first mode, the power consumed by the antenna module may be a first power, and when the operation mode is a second mode, the power consumed by the antenna module may be a second power smaller than the first power.

[0245] According to one embodiment, there can be provided a control method for a plasma generating device comprising: a first power supply device capable of changing the frequency within a first frequency range; a second power supply device capable of changing the frequency within a second frequency range that is at least partially different from the first frequency range; a dielectric tube; a first unit coil wound at least once around the dielectric tube; a second unit coil wound at least once around the dielectric tube; and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil.

[0246] The method for controlling the plasma generating device includes a step of operating in a first mode of providing RF power to the antenna module with a first frequency as a driving frequency, and a step of operating in a second mode of providing RF power to the antenna module with a second frequency as a driving frequency. The first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the second frequency can correspond to a second resonant frequency determined by the first inductance and the first capacitance.

[0247] The second power supply may include a second matching element having a second impedance, and the step of operating in the second mode may include operating at a second frequency corresponding to a second resonant frequency determined based on the first inductance, the first capacitance, and the second impedance.

[0248] The first power supply may include a first matching element having a first impedance, and the step of operating in the first mode may include operating at a first frequency corresponding to a first resonant frequency determined based on the first inductance, the first capacitance, and the first impedance.

[0249] When the operation mode is a first mode, the power consumed by the antenna module may be a first power, and when the operation mode is a second mode, the power consumed by the antenna module may be a second power greater than the first power.

[0250] When the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0251] The magnitude of the first current flowing through the antenna module when the operation mode is the first mode may be smaller than the magnitude of the second current flowing through the antenna module when the operation mode is the second mode.

[0252] On the other hand, the control method for a plasma generating device may further include a step of acquiring a current flowing through the antenna module when the operation mode is the first mode, and a step of changing the operation mode to the second mode when the current flowing through the antenna module is equal to or less than a reference value.

[0253] The method for controlling the plasma generating device may further include a step of acquiring a current flowing through an inverter of the first power supply device when the operation mode is the first mode, and a step of changing the operation mode to the second mode when the current flowing through the inverter of the first power supply device is equal to or less than a reference value.

[0254] According to another embodiment, it is possible to provide a plasma generating device that generates plasma by supplying power from a first power supply device capable of changing the frequency within a first frequency range when the operating mode is a first mode, and by supplying power from a second power supply device capable of changing the frequency within a second frequency range that is at least partially different from the first frequency range when the operating mode is a second mode.

[0255] The plasma generating device may include a dielectric tube, a first unit coil wound around the dielectric tube at least once, a second unit coil wound around the dielectric tube at least once, and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil.

[0256] When the operation mode is the first mode, the antenna module can induce a first plasma discharge based on a power signal having a first frequency within a first frequency range.

[0257] When the operating mode is the second mode, the antenna module can induce a second plasma discharge based on a power signal having a second frequency within the second frequency range.

[0258] The first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency can correspond to a first resonant frequency determined based on the first inductance and the first capacitance.

[0259] The voltage across the antenna module when the operation mode is in the first mode may be less than the voltage across the antenna module when the operation mode is in the second mode.

[0260] When the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0261] As described in the above embodiments, the discharge characteristics of the antenna module can be changed by changing the operation mode by changing the driving frequency of the power applied to the antenna module. By providing various discharge characteristics through a single antenna module, it is possible to provide a plasma generating device that has a wider matching range, exhibits various energy efficiencies, and is capable of maintaining discharge under various environments.

[0262] On the other hand, when one antenna module is used, the discharge characteristics that can be exhibited may be limited due to the limitations of the physical structure of the antenna module. Therefore, a plasma generating device including two or more antenna modules can be provided. The following describes the plasma generating device including two or more antenna modules and its operation.

[0263] 3.2 Two antennas 3.2.1 Plasma generation process with two antennas According to an embodiment, the plasma generating device may include two or more antenna modules. The plasma generating device may include a plurality of antenna modules each having different discharge characteristics. The two or more antenna modules may have different impedances. The plasma generating device may be provided to change the active antenna module as required. The active antenna module refers to an antenna module that mainly consumes power. The two or more antenna modules may be connected in parallel to a variable frequency power source.

[0264] The two or more antenna modules can operate differently from each other depending on the driving frequency of the plasma generating device. For example, when the driving frequency of the plasma generating device is a first frequency corresponding to the resonant frequency of the first antenna module, the first antenna module can operate in a resonant state in which the reactance is offset, and the second antenna module can operate in a non-resonant state. For example, when the driving frequency of the plasma generating device is a first frequency corresponding to the resonant frequency of the first antenna module, the inflow of current into the second antenna module having an impedance different from that of the first antenna module can be suppressed. When the driving frequency is a second frequency corresponding to the resonant frequency of the second antenna module, the inflow of current into the first antenna module having an impedance different from that of the second antenna module can be suppressed. Also, for example, when the driving frequency is a third frequency different from the resonant frequency of the first antenna module and the resonant frequency of the second antenna module, both the first antenna module and the second antenna module can operate in a non-resonant state. The antenna module can induce a capacitively coupled plasma discharge in a non-resonant state and induce an inductively coupled plasma discharge in a resonant operating state.

[0265] The plasma generating device described in this specification can control the drive frequency to selectively switch the active antenna module and change the discharge characteristics, as in the above example.

[0266] The two or more antenna modules may have different structures. For example, one antenna module may include a solenoid coil wound continuously around a dielectric tube multiple times and a terminal capacitor connected to both ends of the solenoid coil, as illustrated in FIG. 8. Another antenna module may include a plurality of unit coils and an interlayer capacitor disposed between the unit coils, as illustrated in FIG. 10. Also, for example, one antenna module may include a plurality of unit coils including a first turn per layer and forming a first layer, an interlayer capacitor disposed between the unit coils, and a terminal capacitor, and another antenna module may include a plurality of unit coils including a second interlayer turn and forming a second layer, an interlayer capacitor, and a terminal capacitor.

[0267] In the following description, for convenience, the number of antenna modules is two, but the plasma generating device may include two or more antenna modules. The plasma generating device may include two or more antenna modules each having a different impedance, structure, and / or function, and may be provided to change the active antenna as required. The variable frequency power source may include one or more power source modules.

[0268] According to the invention described in this specification, it is possible to provide a plasma generation device that includes an antenna module having discharge characteristics that are advantageous for initial discharge, an antenna module having discharge characteristics that are suitable for maintaining discharge, and / or an antenna module having discharge characteristics with little energy loss, and is configured to enable mode changes by switching the antenna as necessary.

[0269] As described herein, a plasma generating device including multiple antenna modules, each of which is configured to selectively operate, may be used to match a wider range of impedance or real resistance. Also, by utilizing multiple antenna modules each having a different discharge control range (e.g., flow rate, power, pressure, gas type), a plasma generating device having a wider discharge control range can be provided.

[0270] 3.2.1.1 First Example 22 is a diagram for explaining a plasma discharge process when the plasma generating device includes a first antenna module 203, a second antenna module 204, and an RF power supply device 102. The RF power supply device 102 can include one or more power supply modules. The RF power supply device 102 can include one or more power supply modules having different output frequency bands.

[0271] 23 and 24 are schematic circuit diagrams for explaining the change of the operation mode of the plasma generating device.

[0272] In the following, the mode-changing plasma discharge process in the case of two or more antenna modules will be described with reference to FIGS.

[0273] Referring to FIG. 22, when the plasma generating device includes a first antenna module 203, a second antenna module 204, and an RF power supply device 102, the plasma generating device can change the active antenna module by changing the driving frequency of the power supply device 102.

[0274] 22(a), when the operation mode of the plasma generating device is the first mode, the plasma generating device can induce plasma discharge inside the dielectric tube by transmitting a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204 via the power supply device 102. The first frequency f1 can be a driving frequency that causes the first antenna module 203 to operate as a driven antenna module.

[0275] When the operation mode is the first mode, the plasma generating device can form a first electric field E1 inside the dielectric tube. The first electric field E1 can be a vertical electric field E1 aligned with the axial direction of the dielectric tube. When the operation mode is the first mode, the plasma generating device can also form an azimuthal electric field E2 inside the dielectric tube aligned with the circumferential direction of the dielectric tube.

[0276] According to one embodiment, when the operation mode of the plasma generating device is the first mode, a power signal having a first frequency f1 is transmitted to the first antenna module 203 and the second antenna module 204 to form a vertical electric field E1, thereby inducing the generation of capacitively coupled plasma inside the dielectric tube.

[0277] According to an embodiment, when the operation mode of the plasma generating device is the first mode, the plasma generating device can transmit a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204 to form an azimuthal electric field E2 and induce inductively coupled plasma generation inside the dielectric tube. When the operation mode of the plasma generating device is the first mode, the plasma generating device can form an azimuthal electric field E2 having a first intensity.

[0278] Fig. 23 is a diagram for explaining the operation of the plasma generating device shown in (a) of Fig. 22. Referring to Fig. 23, when the operation mode of the plasma generating device is the first mode, the plasma generating device can output a first current I1 having a second frequency f2 to the first antenna module 203 and the second antenna module 204 via a variable frequency RF power supply.

[0279] When the operation mode of the plasma generating apparatus is the first mode, the a1 current Ia1 may be distributed to the first antenna module 203, and the b1 current Ib1 may be distributed to the second antenna module 204. The a1 current Ia1 may be greater than the b1 current Ib1. When the operation mode is the first mode, the first frequency f1, which is the driving frequency, corresponds to the resonant frequency of the first antenna module 203, and the reactance of the first antenna module 203 may be mostly offset, and the reactance of the second antenna module 204 may be relatively less offset. Most of the current may be distributed to the first antenna module 203. When the operation mode of the plasma generating apparatus is the first mode, the first power consumed by the first antenna module 203 may be greater than the second power consumed by the second antenna module 204. When the operation mode of the plasma generating apparatus is the first mode, the first antenna module 203 may cause an inductively coupled plasma discharge in the dielectric tube, and the generated plasma may be inductively coupled with the inductor of the first antenna module 203.

[0280] 22(b), when the operation mode of the plasma generating device is the second mode, the plasma generating device can provide power to the first antenna module 203 and the second antenna module 204 via the power supply device 102 with a second frequency f2 as a drive frequency. The second frequency f2 may be different from the first frequency f1. The second frequency f2 may differ from the first frequency f1 by a certain value or more. The second frequency f2 may be higher or lower than the first frequency f1 by a certain value (e.g., 0.2 MHz) or more.

[0281] When the operation mode of the plasma generating device is the second mode, the plasma generating device can transmit a power signal of a second frequency f2 to the first antenna module 203 and the second antenna module 204 to induce an azimuthal electric field E3 and induce an inductively coupled plasma discharge inside the dielectric tube. When the operation mode of the plasma generating device is the second mode, the plasma generating device can form an azimuthal electric field E3 having a second intensity. The second intensity may be greater or less than the intensity of the azimuthal electric field E2 in the first mode.

[0282] Fig. 24 is a diagram for explaining the operation of the plasma generating device shown in (b) of Fig. 22. Referring to Fig. 24, when the operation mode of the plasma generating device is the second mode, the plasma generating device can output a second current I2 having a second frequency f2 to the first antenna module 203 and the second antenna module 204 via a variable frequency RF power supply.

[0283] When the operation mode of the plasma generating apparatus is the second mode, the a2 current Ia2 may be distributed to the first antenna module 203, and the b2 current Ib2 may be distributed to the second antenna module 204. The a2 current Ia2 may be smaller than the b2 current Ib2. According to an embodiment, when the operation mode is the second mode, the second frequency f2, which is the driving frequency, corresponds to the resonant frequency of the second antenna module 204, and the reactance of the second antenna module 204 may be mostly offset, and the reactance of the first antenna module 203 may be relatively less offset. Most of the current may be distributed to the second antenna module 204. When the operation mode of the plasma generating apparatus is the second mode, the second power consumed by the second antenna module 204 may be larger than the first power consumed by the first antenna module 203. When the operation mode of the plasma generating apparatus is the second mode, the second antenna module 204 may cause an inductively coupled plasma discharge in the dielectric tube, and the generated plasma may be inductively coupled with the inductor of the second antenna module 204.

[0284] Fig. 25 is a diagram for explaining the change in voltage and current depending on the operation mode of the plasma generating device. Fig. 25 is a diagram for explaining the current a flowing through the first antenna module, the voltage b across the induction coil of the first antenna module, the current c flowing through the second antenna module, the voltage d across the induction coil of the second antenna module, and the frequency e according to time. In Fig. 25, the current and voltage graphs show magnitude.

[0285] Referring to (e) of FIG. 25, when the operation mode of the plasma generating apparatus is the first mode, the power supply device 102 may provide a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204. At this time, referring to (a) and (c) of FIG. 25, the a1 current Ia1 may flow through the first antenna module 203, and the b1 current Ib1 smaller than the a1 current Ia1 may flow through the second antenna module 204. Referring to (b) and (d) of FIG. 25, when the operation mode of the plasma generating apparatus is the first mode, the voltage across the induction coil of the first antenna module 203 may be the a1 voltage Va1, and the voltage across the induction coil of the second antenna module 204 may be the b1 voltage Vb1 smaller than the a1 voltage Va1.

[0286] Referring to (e) of FIG. 25, when the operation mode of the plasma generating apparatus is the second mode, the power supply device 102 can provide a power signal having a second frequency f2 to the first antenna module 203 and the second antenna module 204. Referring to (a) and (c) of FIG. 25, in the second mode, the a2 current Ia2 smaller than the a1 current Ia1 can flow through the first antenna module 203, and the b2 current Ib2 larger than the b1 current Ib1 can flow through the second antenna module 204. The b2 current Ib2 may be larger than the a1 current Ia1. Referring to (b) and (d) of FIG. 25, when the operation mode of the plasma generating apparatus is the second mode, the voltage across the induction coil of the first antenna module 203 may be the a2 voltage Va2 smaller than the a1 voltage Va1, and the voltage across the induction coil of the second antenna module 204 may be the b2 voltage Vb2 larger than the b1 voltage Vb1. The b2nd voltage Vb2 may be greater than the a2nd voltage Va2.

[0287] Fig. 26 is a diagram for explaining a voltage drop in each antenna module of a plasma generating device according to an embodiment. In the following, voltage distribution according to the position of the induction coil constituting the driven antenna module in each operation mode will be described with reference to Fig. 24.

[0288] When the plasma generating device is in a first mode in which the driving frequency is a first frequency corresponding to the resonant frequency of the first antenna module 203, most of the power supplied by the power source is consumed by the first antenna module 203 as described above, and the first antenna module 203 can operate as a driven antenna module.

[0289] Figure 26(a) shows a schematic diagram of the voltage Vm1 depending on the position of the induction coil of the first antenna module 203 in the first mode when the first antenna module 203 is configured to include unit coils (three unit coils in the example of Figure 26(a)) constituting a unit layer as illustrated in Figure 10 and interlayer capacitors arranged between the unit coils.

[0290] When the operation mode is the first mode, the first antenna module 203 may be in a resonant state. When the operation mode is the first mode, reactance cancellation of the inductive coil by the interlayer capacitor between the unit coils of the first antenna module 203 is maximized, and a first inductively coupled plasma discharge may be induced.

[0291] 26(a), the voltage across the antenna module having a total length L13 may be a first voltage V1. Preferably, the voltage across each of the unit coils constituting the antenna module (from the origin to point L11, from point L11 to point L12, from point L12 to point L13) may be substantially the same as the first voltage V1.

[0292] FIG. 26(b) is a diagram for explaining a voltage distribution according to the position of the second antenna module 204 when the plasma generation apparatus according to one embodiment is in the second mode in which the second frequency is the driving frequency.

[0293] When the plasma generating device is in a second mode in which the driving frequency is a second frequency corresponding to the resonant frequency of the second antenna module 204, most of the power supplied by the power source is consumed by the second antenna module 204 as described above, and the second antenna module 204 can operate as a driven antenna module.

[0294] Figure 26(b) shows a schematic diagram of the voltage Vm2 depending on the position of the induction coil of the second antenna module 204 in the second mode when the first antenna module 204 is configured to include unit coils (four unit coils in the example of Figure 26(b)) constituting a unit layer as illustrated in Figure 10 and interlayer capacitors arranged between the unit coils.

[0295] When the operation mode is the second mode, the second antenna module 204 may be in a resonant state. When the operation mode is the second mode, reactance cancellation of the inductive coils by the interlayer capacitors between the unit coils of the second antenna module 204 is maximized, and a second inductively coupled plasma discharge may be induced. The second inductively coupled plasma discharge may have a more energy-efficient characteristic than the first inductively coupled plasma discharge.

[0296] 26(b), the voltage across the antenna module having a total length L24 may be a second voltage V2. Preferably, the voltage across each of the unit coils constituting the antenna module (from the origin to point L21, from point L21 to point L22, from point L22 to point L23, and from point 23 to point 24) may be substantially equal to the second voltage V2.

[0297] On the other hand, when the operation mode is the first mode, it is possible to substantially block the inflow of current to the second antenna module 204. Therefore, when the operation mode is the first mode, the voltage across the inductive element constituting the second antenna module 204 can converge to a very small value. Also, when the operation mode is the second mode, it is possible to substantially block the inflow of current to the first antenna module 204. Therefore, when the operation mode is the second mode, the voltage across the inductive element constituting the first antenna module 203 can converge to a very small value.

[0298] According to one embodiment, the first antenna module 203 may be an antenna module including a solenoid coil wound multiple times without an interlayer capacitor, as illustrated in Fig. 8. If the first antenna module 203 does not include an interlayer capacitor, the voltage across the induction coil of the first antenna module 203 may be a first voltage (maximum value) when the driving frequency is a first frequency, and a second voltage less than the first voltage when the driving frequency is a second frequency.

[0299] In the above embodiment, the mode change process in which the operation mode of the plasma generating device is changed from the first mode to the second mode and the driving frequency is reduced has been described, but this is merely an example, and the mode change form can be changed as necessary. For example, the operation mode of the plasma generating device can be changed from the second mode to the first mode. Or, the operation mode of the plasma generating device may include three or more modes.

[0300] 3.2.1.2 Second Example In the following, the embodiment described in relation to Figs. 22 to 26 will be described with more specific examples. According to one embodiment, when it is required to ensure the initial discharge stability of the plasma (for example, in the case of atmospheric pressure plasma discharge), the plasma generating device may further include a DC power supply and an electrode for providing a seed charge to the plasma discharge. In this case, the operation mode of the plasma generating device may include a first mode for assisting the initial discharge (i.e., the initial discharge mode) and a second mode for assisting the main discharge (i.e., the main discharge mode). In the following, unless otherwise specified, the contents of the embodiment described above in relation to Figs. 22 to 26 may be similarly applied.

[0301] 27 is a diagram for explaining a plasma discharge process in a case where the plasma generation device includes the first antenna module 203, the second antenna module 204, the RF power supply device 102, the DC power supply device 101, and the DC electrodes 231 and 233. For the DC power supply device 101 and the DC electrode 231, the contents described above in relation to FIGS. 4 to 7 can be similarly applied.

[0302] 28 and 29 are schematic circuit diagrams for explaining a change in the operation mode of the plasma generating device illustrated in FIG.

[0303] In the following, a mode-changing plasma discharge process of a plasma generating device including a DC electrode will be described with reference to FIGS.

[0304] The operation modes of the plasma generating device can include a first mode for performing an initial plasma discharge and a second mode for performing a main plasma discharge. Fig. 27(a) is a diagram for explaining the operation of the plasma generating device in the first mode. Fig. 27(b) is a diagram for explaining the operation of the plasma generating device in the second mode.

[0305] Referring to (a) of Figure 27, in a first mode, the plasma device can provide power to the first antenna module 203 and the second antenna module 204 via the power supply device 102, with a first frequency corresponding to the resonant frequency of the first antenna module as the driving frequency.

[0306] Referring to (a) of FIG. 27, when the operation mode is the first mode, the DC power supply device 101 can apply a high voltage pulse to the DC electrode 231. When the operation mode is the first mode, the plasma generating device can apply a high voltage pulse to the DC electrode 231 via the DC power supply device 101 to form an electric field E4. The electric field E4 can be formed between the DC electrode 231 and an object serving as a counter electrode. For example, the electric field E4 can be formed between the DC electrode 231 and the gas tube 211. The plasma generating device can form the electric field E4 and induce a local discharge (e.g., a streamer discharge) to supply a seed charge in the dielectric tube.

[0307] Referring to FIG. 28, when the operating mode of the plasma generating device is the first mode, the plasma generating device can apply a high voltage pulse to the DC electrode 231 via the DC power supply device 101 to generate a seed charge, and perform an initial plasma discharge via the first antenna module 203 based on the generated seed charge.

[0308] When the operation mode of the plasma generating device is the first mode, the plasma generating device may perform plasma discharge through the first antenna module based on the seed charge. The plasma discharge through the first antenna module may be a capacitively coupled plasma discharge or an inductively coupled plasma discharge. Here, the case where the discharge through the first antenna module is a capacitively coupled plasma discharge will be described as a reference.

[0309] According to one embodiment, the plasma discharge state can change over time, and the operation mode of the plasma generating device can be changed in response to the change in the plasma discharge state.

[0310] For example, plasma discharge in the first mode can be mainly performed by the charge-coupled mode (E-mode). However, if sufficient plasma is generated by the charge-coupled mode, a second electric field E2, which is an azimuthal inductive electric field, can be formed in the dielectric tube. Once the second electric field E2 is formed, plasma can be generated by the inductively coupled plasma discharge or the inductively coupled mode (H-mode).

[0311] The plasma generating device can change the operation mode in response to a change in the plasma discharge state. Referring to Fig. 28, the plasma generating device transmits a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204 via the power supply device 102, and can change the operation mode in response to a transition of the plasma discharge state.

[0312] The plasma generating device can sense a change in the plasma discharge state. The plasma generating device can include a sensor module that acquires a current flowing through the first antenna module 203 and / or the second antenna module 204 and / or a voltage applied to both ends of the first antenna module 203 and / or the second antenna module 204. The plasma generating device can acquire a change in the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or a voltage applied to both ends of the first antenna module 203 and / or the second antenna module 204 via the sensor module, and change the drive frequency and / or the operation mode of the power supply device 102.

[0313] For example, a change in the plasma discharge state can change the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or the voltage applied across the first antenna module 203 and / or the second antenna module 204. For example, a change in the predominant plasma discharge state from capacitively coupled plasma discharge to inductively coupled plasma discharge can reduce the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or the voltage applied across the first antenna module 203 and / or the second antenna module 204.

[0314] The plasma generating device can change its operating mode to the second mode in response to a decrease in the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or the voltage applied across the first antenna module 203 and / or the second antenna module 204.

[0315] When the operating mode of the plasma generating device is changed, the plasma generating device provides power to the first antenna module 203 and the second antenna module 204 at a driving frequency of the second frequency, and can operate the second antenna module 204 as a driven antenna module as described in the above embodiment.

[0316] 27(b), in the second mode, the DC power supply 101 can interrupt the power supply. In the second mode, the plasma generating device can provide power to the first antenna module 203 and the second antenna module 204 with the second frequency corresponding to the resonant frequency of the second antenna module 204 as the driving frequency, thereby performing a main plasma discharge.

[0317] Referring to FIG. 29, when the operation mode of the plasma generating device is the second mode, the plasma generating device can perform a main plasma discharge through the second antenna module 204 based on the initial discharge plasma generated by the first antenna module 203 with the second frequency as the driving frequency.

[0318] Fig. 30 is a diagram for explaining the change in voltage and current depending on the operation mode of the plasma generating device. Fig. 30 is a diagram for explaining the DC high voltage pulse a, the current b flowing through the first antenna module, the voltage c across the induction coil of the first antenna module, the current d flowing through the second antenna module, the voltage e across the induction coil of the second antenna module, and the frequency f according to time. In Fig. 30, the current and voltage graphs show the magnitude.

[0319] With respect to (b), (c), (d), (e), and (f) of Figure 30, the current b flowing through the first antenna module of the plasma generation device, the voltage c across the induction coil of the first antenna module, the current d flowing through the second antenna module, the voltage e across the induction coil of the second antenna module, and the frequency f can be similarly applied to the contents described above with reference to Figure 25.

[0320] Referring to (a) of FIG. 30, when the operation mode of the plasma generating device is the first mode, the DC power supply device 101 can generate high voltage pulses. The DC power supply device 101 can generate high voltage pulses while the first mode is maintained (while the driving frequency is maintained at the first frequency f1). The DC power supply device 101 can stop generating high voltage pulses even before the first mode ends. The plasma generating device (or a control unit of the plasma generating device) can control the DC power supply device 101 to generate a predetermined number of high voltage pulses. The plasma generating device can control the DC power supply device 101 to generate high voltage pulses for a predetermined time.

[0321] Referring to (b) and (c) of Figure 30, when the operating mode is the first mode, a change in the plasma discharge state may cause a decrease in the current flowing through the first antenna module and / or the voltage across the induction coil of the first antenna module.

[0322] 28(d), (e), and (f), the plasma generating device can change the operation mode to the second mode in response to a decrease in the current flowing through the first antenna module and / or the voltage across the induction coil of the first antenna module. Referring to FIG. 30(a), when the operation mode of the plasma generating device is in the second mode, the DC power supply can stop generating the high voltage pulse.

[0323] Meanwhile, in the above embodiment, the operation mode is changed to the second mode in response to a change in the plasma state in the first mode. However, the operation mode may be changed in the reverse order.

[0324] 3.2.2 Two Antennas and One Inverter 31 is a diagram for explaining a plasma generating apparatus according to an embodiment. Referring to FIG. 31, the plasma generating apparatus may include a power supply module 104, a first antenna module 203, and a second antenna module 204.

[0325] The RF power supply module 104 may be an AC power source having a predetermined frequency tuning range. The power supply module 104 may operate at a resonant frequency of the antenna module 202 of the first antenna module 203 and / or the second antenna module 204 as a driving frequency.

[0326] A method for controlling a plasma generating device according to an embodiment includes a step of controlling the plasma generating device to a first mode via a power supply module, and a step of controlling the plasma generating device to a second mode via a power supply module. The above-mentioned contents can be applied to the first mode and the second mode.

[0327] FIG. 32 is a diagram for explaining a method of controlling a plasma generating apparatus according to an embodiment.

[0328] Referring to FIG. 32, a method for controlling a plasma generating apparatus according to one embodiment may include a step S310 of providing power at a first frequency to a first antenna module and a second antenna module via a power supply module, and a step S330 of providing power at a second frequency to the first antenna module and the second antenna module via the power supply module.

[0329] Step S310 of providing power at a first frequency to the first antenna module and the second antenna module via the power supply module may include providing power with the first frequency corresponding to the resonant frequency of the first antenna module as a driving frequency.

[0330] The first antenna module may be an antenna module including an interlayer capacitor. In this case, the voltage distribution of the first antenna module may be as shown in FIG. 26(a). Alternatively, the first antenna module may be an antenna module not including an interlayer capacitor. In this case, the power distribution of the first antenna module may be as shown in FIG. 16(a).

[0331] The step S310 of providing power at a first frequency to the first antenna module and the second antenna module via the power supply module may include inducing a capacitively coupled plasma discharge via the first antenna module.

[0332] Step S330 of providing power at a second frequency to the first antenna module and the second antenna module via the power supply module may include providing power with the second frequency corresponding to the resonant frequency of the second antenna module as a driving frequency.

[0333] The second antenna module may be an antenna module including an interlayer capacitor, in which case the power distribution of the second antenna module may look like that illustrated in FIG.

[0334] The step S330 of providing power at a second frequency to the first antenna module and the second antenna module via the power supply module may include inducing an inductively coupled plasma discharge via the second antenna module.

[0335] According to an embodiment, the method for controlling the plasma generating device may further include acquiring a change in the power signal. The method for controlling the plasma device may include acquiring a change in the current flowing through the first antenna module or a change in the voltage across the first antenna module (or a part of the elements constituting the first antenna module), and changing the driving frequency of the power supply module to a second frequency based on the change.

[0336] 3.2.3 Two inverters with two antennas Fig. 33 is a diagram for explaining a plasma generating apparatus according to an embodiment. Referring to (a) and (b) of Fig. 31, the plasma generating apparatus according to an embodiment may include a first power supply module 105 which is an AC power source having a first frequency band and a first matching range, a second power supply module 106 which is an AC power source having a second frequency band and a second matching range, a first antenna module 205 which receives power from the first power supply module 105 to perform plasma discharge, and a second antenna module 206 which receives power from the second power supply module 106 to perform plasma discharge.

[0337] The first power supply module 105 may have a first driving frequency range, and the second power supply module 106 may have a second driving frequency range that is at least partially different from the first driving frequency range. The first power supply module 105 may be driven at a first frequency within the first driving frequency range. The second power supply module 106 may be driven at a second frequency within the second driving frequency range. The first frequency may correspond to a resonant frequency of the first antenna module 205, and the second frequency may correspond to a resonant frequency of the second antenna module 206. The first power supply module 105 may include a first matching element. The second power supply module 106 may include a second matching element having an impedance different from that of the first matching element.

[0338] A method for controlling a plasma generating device according to an embodiment includes a step of controlling the plasma generating device to a first mode via a first power supply module, and a step of controlling the plasma generating device to a second mode via a second power supply module. The above-mentioned contents can be applied to the first mode and the second mode.

[0339] FIG. 34 is a diagram for explaining a plasma generating method according to one embodiment.

[0340] Referring to FIG. 34, a method for controlling a plasma generating apparatus according to one embodiment may include a step S410 of providing power at a first frequency to a first antenna module via a first power supply module, and a step S430 of providing power at a second frequency to a second antenna module via a second power supply module.

[0341] The step S410 of providing power at a first frequency to the first antenna module via the first power supply module may include providing power to the first antenna module via the first power supply module at the first frequency, which is a resonant frequency of the first antenna module, such that the voltage distribution of the first antenna module may appear as illustrated in FIG.

[0342] Step S410 of providing power at a first frequency to the first antenna module via the first power supply module may include operating at the first frequency as a driving frequency and inducing a capacitively coupled plasma discharge inside the dielectric tube via the first antenna module.

[0343] Alternatively, step S410 of providing power at a first frequency to the first antenna module via the first power supply module may include providing power at the first frequency to the first antenna module via the first power supply module to induce an inductively coupled plasma discharge via an induced electric field having a first strength inside the dielectric tube.

[0344] The step S430 of providing power at a second frequency to the second antenna module via the second power module may include providing power to the second antenna module via the second power module at the second frequency, which is a resonant frequency of the second antenna module, such that the power distribution of the second antenna module may appear as illustrated in FIG.

[0345] Step S430 of providing power at a second frequency to the second antenna module via the second power supply module may include operating at the second frequency as a driving frequency and inducing an inductively coupled plasma discharge inside the dielectric tube via the second antenna module.

[0346] The step S430 of providing power at a second frequency to the second antenna module via the second power module may include operating at the second frequency as a driving frequency to form an induced electric field having a second intensity inside the dielectric tube to induce an inductively coupled plasma discharge, the second intensity being greater or less than the first intensity of the electric field induced by the first power module.

[0347] According to an embodiment, the method for controlling the plasma generating device may further include a step of acquiring a change in the power signal. The method for controlling the plasma device may include a step of acquiring a change in the current flowing through the antenna module or a change in the voltage across the antenna module (or a part of the elements constituting the antenna module). The method for controlling the plasma device may include acquiring the above-mentioned change and controlling the first power supply module and / or the second power supply module based on the change. For example, the method for controlling the plasma device may include acquiring a current flowing through the first antenna module or a drop in the voltage across the first antenna module (or a part of the elements constituting the first antenna module), and interrupting the operation of the first power supply module and starting the operation of the second power supply module based on the change.

[0348] As described in the above embodiments, by using a plurality of antenna modules each having different discharge characteristics, selective plasma discharge can be performed according to various discharge environments. By performing plasma discharge using a plurality of antenna modules, it is possible to provide a plasma generating device capable of performing discharge under various environments.

[0349] 4. Plasma generation device that suppresses by-products On the other hand, by applying a voltage to an antenna coil wound around the tube, byproducts other than the desired product can be formed. For example, an electric field having a directional component perpendicular to the tube is formed by the voltage applied to the coil, which accelerates the plasma generated inside the tube toward the inner wall of the tube and collides with the inner wall of the tube, and byproducts that are separated from the inner wall by the collision can be mixed with the plasma products (e.g., radicals).

[0350] In the following, a plasma generating device for suppressing the generation of by-products and a control method thereof will be described with reference to several embodiments.

[0351] 4.1 Antenna module A plasma generating apparatus according to one embodiment can include an antenna module designed to minimize the generation of by-products.

[0352] The antenna module may include one or more unit antennas and unit capacitors. The antenna module may be arranged around the plasma dielectric tube (see FIG. 4 and FIG. 6).

[0353] The antenna module may include one or more unit antennas arranged to be sandwiched between plasma dielectric tubes. Each unit antenna may be arranged at a predetermined interval along the length of the tube. Each unit antenna may be arranged at a distance along the length of the tube and rotated about the central axis of the tube (see, for example, FIG. 10 and related description). The unit antenna may be an inductor having an inductance. Each unit antenna may have the same inductance.

[0354] The unit antenna may include a unit turn. The unit antenna may include a first turn in contact with the dielectric tube and a second turn disposed farther from the dielectric tube than the first turn. The first turn and the second turn may be located on the same plane. The first turn and the second turn may be located on a plane perpendicular to the length direction of the dielectric tube. For example, a unit antenna module according to an embodiment may be prepared as illustrated in FIG. 12.

[0355] The antenna module may include one or more unit capacitors connected to the unit antennas. The unit capacitors may be connected to the unit antennas and disposed between the unit antennas. The unit capacitors may be disposed between the unit antennas and a power source. For example, the unit capacitors may be disposed as illustrated in FIG. 8 or FIG. 10. The one or more unit capacitors included in the antenna module may have the same capacitance. Alternatively, the one or more unit capacitors included in the antenna module may have different capacitances.

[0356] The antenna module is connected to a power source, and is supplied with power from the power source to provide plasma discharge within the dielectric tube. The power supply and plasma discharge operations described above in this specification are similarly applicable.

[0357] FIG. 36 is a diagram for explaining an antenna module according to an embodiment.

[0358] The antenna module 360 ​​may include one or more unit antennas 361 and one or more unit capacitors 363. The antenna module 360 ​​may be disposed around a dielectric tube. The antenna module 360 ​​may include one or more unit antennas 361 having the same shape. The unit antennas may be connected to the unit capacitors 363. The unit capacitors included in the antenna module 360 ​​may be interlayer capacitors disposed between the unit antennas 361 and the unit antennas, or terminal capacitors disposed between the unit antennas and a power source. The antenna module may be connected to a power source to receive power. The above-mentioned unit capacitors 363 may be electrically interposed between the power source and the unit antennas 361 or between different unit antennas 361. In other words, the unit capacitors 363 may electrically connect the power source and the unit antennas 361 in series. Or, the unit capacitors 363 may electrically connect different unit antennas 361 in series, as described below.

[0359] For example, the antenna module 360 ​​may include a first end capacitor connected to a power source, a first unit antenna connected to the first end capacitor, a first interlayer capacitor connecting the first unit antenna and the second unit antenna, a second unit antenna located below the first unit antenna, a second interlayer capacitor connecting the second unit antenna and the third unit antenna, a third unit antenna located below the second unit antenna, a third interlayer capacitor connecting the third unit antenna and the fourth unit antenna, and a fourth unit antenna located below the third unit antenna and connected to a power source. Each unit antenna may be prepared in a form as illustrated in FIG. 37 and may be rotated.

[0360] 36, the antenna module 360 ​​includes four unit antennas, but this is merely an example, and the number of unit antennas and / or unit capacitors may be changed. The contents described above in this specification can be applied to the antenna module 360 ​​in the same manner.

[0361] 4.2 Antenna module configuration The unit antennas and unit capacitors constituting an antenna module according to an embodiment will be described below.

[0362] FIG. 37 is a diagram for explaining a unit antenna according to an embodiment. Referring to FIG. 37, the unit antenna may include at least two unit turns. The unit antenna may include two unit turns arranged on the same plane and having a concentric circle (concentric arc) shape. The unit antenna may include a first unit turn located on the inside and having a smaller radius, and a second unit turn located on the outside and having a larger radius than the first unit turn. The first unit turn may contact the dielectric tube when the antenna module is assembled to the dielectric tube. The unit antenna may include a connection portion connecting each unit turn.

[0363] Referring to FIG. 37, the unit antenna may include a first turn located at the innermost position, a second turn located outside the first turn, and a third turn located outside the second turn. The first turn and the second turn may be connected via a first connection part. The second turn and the third turn may be connected via a second connection part. The first turn may extend in an arc shape from a first point P1 to a second point P2. The third turn located at the outermost position may have a third point P3 that is the furthest from the first point, and the unit antenna may be connected from the first point to the third point.

[0364] Meanwhile, the shape of the unit antenna illustrated in Fig. 37 is merely an example, and the antenna module may include unit antennas of other shapes. For example, although Fig. 37 illustrates an antenna module including three turns, the antenna module may include more or less than three turns.

[0365] 36 and 37 together, a first terminal capacitor may be connected between a first point of the first unit antenna and a power source. A first interlayer capacitor may be connected between a third point of the first unit antenna and a first point of the second unit antenna. A second interlayer capacitor may be connected between a third point of the second unit antenna and a first point of the third unit antenna.

[0366] The unit capacitor may have a fixed capacitance or a variable capacitance. The unit antenna may have a fixed inductance or a variable inductance. The capacitance of the capacitor included in the antenna module or the inductance of the inductor included in the antenna module may be determined in consideration of the arrangement of the antenna module with respect to the tube. The capacitance of the capacitor included in the antenna module or the inductance of the inductor included in the antenna module may be determined in consideration of the arrangement of the antenna module to which each capacitor or inductor is connected. The antenna module may include a capacitor having a capacitance determined to minimize the generation of by-products or a unit antenna having an inductance determined to minimize the generation of by-products in consideration of the arrangement of the antenna module, the capacitor and / or the unit antenna.

[0367] According to one embodiment, the interlayer capacitors may have a fixed capacitance and the end capacitors may have a variable capacitance. Alternatively, one or more interlayer capacitors may have the same capacitance and the end capacitors may have a different capacitance than the capacitance of the interlayer capacitors. For example, the interlayer capacitors may have a first capacitance, a first end capacitor may have a second capacitance different from the first capacitance, and a second end capacitor may have a third capacitance different from the second capacitance.

[0368] The capacitance value of the unit capacitor may be determined so that by-products generated during plasma discharge are minimized. When plasma discharge is performed, an electric field having a directional component perpendicular to the inner wall of the dielectric tube is formed by the voltage applied to the antenna, and the plasma may collide with the inner wall of the dielectric tube to generate by-products. The capacitance of the unit capacitor may be determined so that the effect of the voltage formed by the antenna on the plasma inside the dielectric tube is minimized.

[0369] As an example, by configuring the capacitance of the terminal capacitors located at both ends of the antenna module to be different from the capacitance of the interlayer capacitor, it is possible to minimize the generation of by-products due to the voltage applied to the antenna module. For example, by configuring the capacitance of the terminal capacitors asymmetrically, it is possible to minimize the potential at one point of the unit turn that is closest to the discharge tube among the unit turns that constitute the unit antenna, thereby minimizing the generation of by-products due to plasma collision. That is, it is possible to minimize the maximum value (absolute value) of the potential at any point in the unit turn that is closest to the dielectric tube, thereby minimizing the generation of by-products due to plasma collision. That is, it is possible to minimize the voltage relative to ground at any point in the unit turn that is closest to the dielectric tube, thereby minimizing the generation of by-products due to plasma collision.

[0370] 36 and 37, in order to minimize the generation of by-products, the absolute value voltage V of the potential of the reactance component between the first point P1 and the second point P2 of the unit antenna is R That is, by minimizing the voltage applied to the reactance component of the first turn located at the innermost position and minimizing the voltage component in the direction perpendicular to the inner wall of the dielectric tube, the generation of by-products can be reduced.

[0371] The voltage (or potential) of a reactive component between points can mean the voltage (or the potential difference between both ends) applied to the combined reactive component between points.

[0372] According to one embodiment, the capacitance of the first end capacitor (the capacitance of the capacitor connected to the first point P1 of the first turn) may be greater than the capacitance of the second end capacitor. The capacitance of the first end capacitor may be greater than the capacitance of the interlayer capacitor. The capacitance of the second end capacitor (the capacitance of the capacitor connected to the third point P3 of the third turn) may be less than the capacitance of the interlayer capacitor. The combined capacitance value of the first end capacitor and the second end capacitor may be the same as the capacitance value of the interlayer capacitor.

[0373] The capacitance of the first end capacitor and the capacitance of the second end capacitor can be appropriately adjusted so that the absolute values ​​of the potentials at the first point P1 and the second point P2 are similar. The absolute values ​​of the voltages applied to the first point P1 and the second point P2 can be adjusted so that they are similar, thereby minimizing the absolute value of the potential of the reactance component of the first turn located at the innermost position, thereby reducing the generation of by-products.

[0374] According to another embodiment, in order to assist in generating a plasma discharge, the capacitance of the end capacitor can be changed so that the absolute value of the potential of the reactance component of the innermost unit turn is maximized.

[0375] For example, to support the plasma discharge, the absolute value V of the potential of the reactance component between the first point P1 and the second point P2 of the unit antenna is R can be maximized. That is, the absolute value of the potential of the reactance component of the first turn located at the innermost position can be maximized, and a storage-coupled discharge can be induced inside the dielectric tube to assist the discharge. To assist the discharge, the capacitance of the first end capacitor can be set smaller than the capacitance of the second end capacitor. The capacitance of the first end capacitor may be smaller than the capacitance of the interlayer capacitor. The capacitance of the second end capacitor may be larger than the capacitance of the interlayer capacitor. The combined capacitance value of the first end capacitor and the second end capacitor may be the same as the capacitance value of the interlayer capacitor.

[0376] According to one embodiment, an antenna module can be provided that is coupled to a dielectric tube and receives power from a power source. The antenna module can include a first unit antenna including a first unit turn extending from a first point to a second point and a second unit turn extending from a third point to a fourth point. The first unit turn can be positioned inside the second unit turn, and the second point can be connected to the third point. Each unit turn can extend in an arc or circle. Each unit turn can extend in an arc having the same central angle.

[0377] The antenna module may include a first capacitor connected to a first point of the first unit turn and connected between a first terminal of the power source and the first point, and a second capacitor connected between a second terminal of the power source and a fourth point.

[0378] The capacitance of the second capacitor may be smaller than the capacitance of the first capacitor so as to minimize damage to the tube and generation of by-products due to the voltage applied to the antenna module. The capacitance of the second capacitor may be smaller than the capacitance of the first capacitor so as to minimize damage to the tube and generation of by-products by minimizing the voltage applied to the reactance component of the first unit turn (the turn located at the innermost corner of the first unit antenna) connected to the first capacitor.

[0379] The capacitance of the first capacitor may be more than twice the capacitance of the second capacitor. The capacitance of the first capacitor may be more than twice the capacitance of the second capacitor such that a voltage applied to the reactance component of the first unit turn is minimized.

[0380] The antenna module may include a third capacitor connected between a fourth point of the second unit turn and the second capacitor, and the capacitance of the third capacitor may be smaller than the capacitance of the second capacitor.

[0381] A combined capacitance of the capacitance of the first capacitor and the capacitance of the second capacitor may correspond to a capacitance of the third capacitor. The combined capacitance of the capacitance of the first capacitor and the capacitance of the second capacitor may be substantially the same as the capacitance of the third capacitor.

[0382] The antenna module may further include a second unit antenna including a third unit turn extending from the fifth point to the sixth point and a fourth unit turn extending from the seventh point to the eighth point. The third unit turn may be located inside the fourth unit turn, and the sixth point may be connected to the seventh point. A third capacitor may be connected between the fourth point and the fifth point. A second capacitor may be connected between the eighth point and a second terminal of the power source.

[0383] The capacitance of the third capacitor may be smaller than the capacitance of the second capacitor so that the voltage applied to the reactance component of the first unit turn (the turn located at the innermost corner of the first unit antenna) connected to the first capacitor is minimized, thereby minimizing damage to the tube and the generation of by-products.

[0384] The first and second unit turns can lie on a plane perpendicular to the length of the dielectric tube, the first unit turn can extend in a first direction from a first point to a second point, and the second unit turn can extend in the first direction from a third point to a fourth point, similar to the first unit turn.

[0385] The first point may be located closer to the tube than the fourth point. The first point may correspond to P1 as illustrated in FIG. 37. The fourth point may correspond to P3 as illustrated in FIG.

[0386] When power is supplied to the antenna module, the voltage applied to the reactance component of the first capacitor may be smaller than the voltage applied to the reactance component between the first point and the second point, and the voltage applied to the reactance component of the third capacitor may correspond to the voltage applied to the reactance component between the first point and the fourth point.

[0387] The antenna module can resonate at a resonant frequency determined based on the capacitance of the third capacitor and the inductance of the first unit antenna. When the antenna module is in a resonant state, a point at which the potential with respect to the first terminal becomes zero can be located on the first unit turn of the first unit antenna. The point can be a point at which the potential of the reactance component between the first terminal and the point becomes zero. The point can be a point at which the voltage applied to the reactance component between the first terminal and the point becomes zero.

[0388] The antenna module can resonate at a resonant frequency determined based on the capacitance of the third capacitor and the inductance of the first unit antenna. When the antenna module is in a resonant state, a voltage applied to the reactance component between the first point and the first terminal can be substantially the same as a voltage applied to the reactance component between the second point and the first terminal.

[0389] According to another embodiment, an antenna module including a first unit antenna, a first capacitor, and a second capacitor can be provided as an antenna module coupled to a dielectric tube and supplied with power from a power source.

[0390] The first unit antenna may include a first unit turn extending from a first point to a second point and a second unit turn extending from a third point to a fourth point. The first unit turn may be located inside the second unit turn, and the second point may be connected to the third point.

[0391] The antenna module can include a first capacitor connected between a first terminal of the power source and a first point of the first unit turn.

[0392] The antenna module may include a second capacitor connected to a fourth point of the second unit turn.

[0393] The first capacitor may be connected between the first terminal of the power supply and the first point.

[0394] When power is supplied to the antenna module, the point at which the voltage in the first unit antenna is lowest may be located on the first unit turn. The point may be a point at which the voltage of the reactance component between the first terminal and the point becomes zero.

[0395] The antenna module can resonate at a resonant frequency determined based on the capacitance of the second capacitor and the inductance of the first unit antenna.

[0396] When the antenna module is in a resonant state, a point at which the voltage in the first unit antenna is at a minimum may be located within the first unit turn.

[0397] When power is supplied to the antenna module, a point at which the voltage is lowest in the first unit antenna may be located on the first unit turn.

[0398] When power is supplied to the antenna module, the point at which the absolute value of the potential of the reactance component in the first unit antenna is minimum may be located on the first unit turn.

[0399] The capacitance of the first capacitor may be more than twice the capacitance of the second capacitor.

[0400] In order to minimize damage to the tube and the generation of by-products due to the voltage applied to the antenna module, the capacitance of the second capacitor may be smaller than the capacitance of the first capacitor.

[0401] The antenna module may include a second unit antenna including a third unit turn extending from a fifth point to a sixth point and a fourth unit turn extending from a seventh point to an eighth point. The third unit turn may be located inside the fourth unit turn, and the sixth point may be connected to the seventh point.

[0402] The second capacitor may be connected between the fourth point and the fifth point.

[0403] The input may further include a third capacitor connected between the eighth point and the second terminal of the power supply.

[0404] The capacitance of the second capacitor may be less than the capacitance of the third capacitor.

[0405] A combined capacitance of the capacitance of the first capacitor and the capacitance of the third capacitor may correspond to the capacitance of the second capacitor. The combined capacitance of the capacitance of the first capacitor and the capacitance of the third capacitor may be substantially the same as the capacitance of the second capacitor.

[0406] According to another embodiment, an antenna module including a first unit antenna, a first capacitor, and a second capacitor can be provided as an antenna module coupled to a dielectric tube and supplied with power from a power source.

[0407] The first unit antenna may include a first unit turn extending from a first point to a second point and a second unit turn extending from a third point to a fourth point. The first unit turn may be located inside the second unit turn, and the second point may be connected to the third point.

[0408] The first capacitor is connected to the first point of the first unit turn and can be connected between the first terminal of the power source and the first point.

[0409] A second capacitor may be connected between the second terminal of the power supply and the fourth point. The capacitance of the second capacitor may be different from the capacitance of the first capacitor.

[0410] The antenna module may further include a third capacitor connected between a fourth point of the second unit turn and the second capacitor.

[0411] Meanwhile, the antenna module may further include a second unit antenna including a third unit turn extending from the fifth point to the sixth point and a fourth unit turn extending from the seventh point to the eighth point. The third unit turn may be located inside the fourth unit turn, and the sixth point may be connected to the seventh point.

[0412] The third capacitor may be connected between the fourth point and the fifth point. The second capacitor may be connected between the eighth point and a second terminal of the power supply.

[0413] A combined capacitance of the capacitance of the first capacitor and the capacitance of the second capacitor may correspond to a capacitance of the third capacitor. The combined capacitance of the capacitance of the first capacitor and the capacitance of the second capacitor may be substantially the same as the capacitance of the third capacitor.

[0414] The capacitance of the first capacitor, the capacitance of the second capacitor, and the capacitance of the third capacitor can be understood in the same manner as in the explanation of FIGS.

[0415] 4.3 Voltage distribution during plasma discharge operation The absolute value of the potential of the reactance component of the unit antenna according to the capacitance of the terminal capacitor will be described below.

[0416] FIG. 38 is a diagram for explaining the distribution of electric potential applied to the antenna module according to one embodiment.

[0417] Fig. 38 is a diagram for explaining an antenna module according to an embodiment and the potential of the reactance component of the antenna module. Fig. 38 shows a simplified diagram of the voltage applied to the reactance component of the antenna module when the capacitance of the first end capacitor C1 is greater than the capacitance of the second end capacitor C2 under the conditions of a frequency of about 3 MHz and a current of 20 A. In this case, the potential of the first point P1 was measured to be -100 V, and the potential of the second point P2 was measured to be 100 V.

[0418] The capacitance of the terminal capacitor can be appropriately adjusted to minimize the generation of by-products caused by the collision of the plasma with the dielectric tube due to the charge coupling between the electric field formed by the antenna and the plasma during plasma discharge. The diagram illustrated in FIG. 38 shows a simplified view of the antenna module in which the capacitance of the terminal capacitor is determined to minimize the by-products and the potential of the reactance component of the antenna module.

[0419] Compared with Figure 11, the antenna module illustrated in relation to Figure 11 is similar to the antenna module illustrated in Figure 38 in that the combined capacitance of the terminal capacitors on both sides and the capacitance of the interlayer capacitor are arranged to correspond to each other, but differs from the antenna module described in relation to Figure 38 in that the capacitances of the terminal capacitors on both sides are embodied to be identical.

[0420] The antenna module illustrated in Fig. 11 may be designed so that the voltage applied to the reactance component of one end capacitor corresponds to half the voltage applied to the reactance component of the unit antenna, so that the voltages applied to the reactance components of the antenna (i.e., the voltages applied between the ends of the antenna) are cancelled out. In contrast, the antenna module illustrated in Fig. 38 may be configured so that the capacitances of the end capacitors on both sides are different, so that the potential of the reactance component corresponding to the innermost turn of the unit antenna constituting the antenna module is minimized.

[0421] The antenna module illustrated in FIG. 38 can be configured so that the voltage applied to the reactance component of the first terminal capacitor C1 is different from the voltage applied to the reactance component of the second terminal capacitor C2.

[0422] An antenna module according to one embodiment can be configured so that the voltage applied to the reactance component of the first terminal capacitor C1 connected to the innermost turn of the first unit antenna is smaller than the voltage applied to the reactance component of the second terminal capacitor C2 connected to the outermost turn of the second unit antenna.

[0423] In one embodiment, the antenna module can be arranged such that the capacitance of a first terminal capacitor C1 connected to the innermost turn of a first unit antenna is greater than the capacitance of a second terminal capacitor C2 connected to the outermost turn of a second unit antenna.

[0424] An antenna module according to one embodiment can be arranged such that the magnitude of the potential of the reactance component of the innermost turn of a first unit antenna connected to a first terminal capacitor having a first capacitance is smaller than the magnitude of the potential of the reactance component of the outermost turn of a second unit antenna connected to a second terminal capacitor having a second capacitance smaller than the first capacitance.

[0425] According to one embodiment, the antenna module can be prepared such that the magnitude of the potential of the reactance component of a first unit turn located at the innermost side of the unit antenna is smaller than the magnitude of the potential of the reactance component of a second unit turn located at the outermost side of the unit antenna.

[0426] In an antenna module according to an embodiment, the point at which the potential difference is minimum with respect to the power source (e.g., the end of the first end capacitor not connected to the unit antenna, or ground) may be located on the first unit turn located on the innermost side of the unit antenna, and the point at which the potential difference is maximum with respect to the power source may be located on the second unit turn located on the outermost side of the unit antenna. With reference to FIG. 38, the antenna module may be prepared so that the point at which the potential of the reactance component becomes zero in the unit antenna (i.e., the point at which the potential difference is minimum with respect to the voltage) is closer to the first end capacitor C1 or the power source than in FIG. 10. That is, the capacitance of the end capacitor may be adjusted so that the point at which the potential becomes zero is located on the innermost turn of the unit antenna (i.e., between the first point P1 and the second point P2). This can reduce damage to the dielectric tube caused by the voltage applied to the innermost turn closest to the dielectric tube and the generation of by-products associated therewith.

[0427] Fig. 39 is a simplified diagram showing an antenna module according to another embodiment and a voltage applied to the reactance component of the antenna module. Fig. 39 is a simplified diagram showing a voltage applied to the reactance component of the antenna module when the first terminal capacitor C1 is omitted under the conditions of a frequency of about 3 MHz and a current of 20 A. At this time, the potential at the first point P1 was measured to be 0 V, and the potential at the second point P2 was measured to be 200 V.

[0428] The antenna module illustrated in Fig. 39 is illustrated based on the case where the first end capacitor C1 is omitted and the capacitance of the second end capacitor C2 is the same as the capacitance of the interlayer capacitor. With reference to Fig. 39, the voltage applied to the reactance component of the first unit turn (the innermost turn) extending from the first point P1 to the second point P2 may be greater than the voltage applied to the reactance component of the first turn of the antenna module illustrated in Fig. 38.

[0429] Referring to Figures 38 and 39 together, it can be seen that by appropriately determining the value of the first end capacitor, it is possible to reduce the absolute value of the potential at a point on the reactance component of the innermost turn.

[0430] FIG. 40 is a simplified diagram showing an antenna module according to another embodiment and voltages applied to the reactance components of the antenna module.

[0431] 40 shows a simplified diagram of the voltage applied to the reactance component of the antenna module when the capacitance of the second end capacitor C2 is smaller than the capacitance of the first end capacitor C1 under conditions of a frequency of about 3 MHz and a current of 20 A. In this case, the potential at the first point P1 was measured to be −700 V, and the potential at the second point P2 was measured to be −500 V.

[0432] The antenna module illustrated in Fig. 40 can be used to assist plasma discharge. The antenna module illustrated in Fig. 40 can assist plasma discharge to occur more smoothly by maximizing the absolute value of the potential at one point of the reactance component of the innermost turn of the antenna module.

[0433] To assist plasma discharge, the capacitance of the first end capacitor C1 may be set smaller than the capacitance of the second end capacitor C2. The combined capacitance of the first end capacitor C1 and the second end capacitor C2 may correspond to the capacitance of the interlayer capacitor.

[0434] Although the embodiments have been described above with reference to limited examples and drawings, those skilled in the art may make various modifications and variations from the above description. For example, the techniques described may be performed in an order different from that described, and / or the components of the described systems, structures, devices, circuits, etc. may be combined or combined in a manner different from that described, or may be replaced or substituted with other components or equivalents to achieve suitable results.

[0435] Therefore, other configurations, other embodiments, and equivalents to the claims are intended to fall within the scope of the following claims.

Claims

1. an antenna module coupled to a dielectric tube to receive power from a power source, The antenna module includes: a multi-layer coil structure including a first end, a second end, and a first through an Nth coil structure electrically interposed between the first end and the second end, where N is a natural number equal to or greater than 2, each of the first through Nth coil structures including more than two turns, the Nth coil structure disposed on an Nth plane, and the N-1th coil structure disposed on an N-1th plane, the N-1th plane being parallel to but distinct from the Nth plane, the multi-layer coil structure further including first through Mth inter-layer capacitors, the Mth inter-layer capacitors electrically interposed between the Mth coil structure and the M+1th coil structure, where M is equal to N-1; at least one first electrical element electrically interposed between the first end and a first terminal of the power source; at least one second electrical element electrically interposed between the second end and a second terminal of the power source; Equipped with the at least one first electrical element has a first resultant reactance, and the at least one second electrical element has a second resultant reactance; An antenna module characterized in that the first composite reactance and the second composite reactance are designed to have different values ​​so that when the antenna module receives power, the points at which the potential of the reactance components with respect to the first end becomes zero are located at the innermost turns of each of the first coil structure to the Nth coil structure.

2. The antenna module of claim 1, characterized in that when the antenna module receives power, the point at which the potential of the reactance component relative to the first end is minimum is located at the innermost turn of each of the first coil structure to the Nth coil structure.

3. The antenna module of claim 1, characterized in that when the antenna module receives power, the point at which the absolute value of the potential of the reactance component relative to the first end is minimum is located at the innermost turn of each of the first coil structure to the Nth coil structure.

4. The antenna module of claim 1, characterized in that when the antenna module receives power, the points at which the potential of the reactance component relative to the first end is maximum are located at the outermost turns of each of the first coil structure to the Nth coil structure.

5. 2. The antenna module according to claim 1, wherein each of the first interlayer capacitor to the Mth interlayer capacitor has a third composite reactance.

6. 6. The antenna module according to claim 5, wherein a sum of the first and second combined reactances is equal to the third combined reactance.

7. The antenna module according to claim 1 , wherein the first combined reactance is greater than the second combined reactance.

8. the at least one first electrical element is directly connected to a first innermost turn of the first coil structure; 8. The antenna module according to claim 7, wherein the at least one second electric element is directly connected to an Nth outermost turn of the Nth coil structure.

9. 2. The antenna module according to claim 1, wherein the first combined reactance is at least twice as large as the second combined reactance.

10. 1. A plasma generation system comprising: a dielectric tube providing a space for inducing plasma; a power source configured to provide power; an antenna module coupled to the dielectric tube and configured to receive power from the power source to induce the plasma; Equipped with The antenna module includes: a multi-layer coil structure including a first end, a second end, and first to N-th coil structures electrically interposed between the first end and the second end, where N is a natural number equal to or greater than 2; at least one first electrical element electrically interposed between the first end and a first terminal of the power source; at least one second electrical element electrically interposed between the second end and a second terminal of the power source; Including, each of the first coil structure through the Nth coil structure includes more than two turns; the N coil structure is disposed on an Nth plane, and the N-1 coil structure is disposed on an N-1th plane, the N-1th plane being parallel to but distinct from the Nth plane; the multi-layer coil structure further includes a first interlayer capacitor through an Mth interlayer capacitor, the Mth interlayer capacitor being electrically interposed between the Mth coil structure and the M+1th coil structure, where M is equal to N-1; the at least one first electrical element has a first resultant reactance, and the at least one second electrical element has a second resultant reactance; A plasma generation system characterized in that the first composite reactance and the second composite reactance are designed to have different values ​​so that when the antenna module receives power, the points at which the potential of the reactance components with respect to the first end becomes zero are located at the innermost turns of each of the first coil structure to the Nth coil structure.

11. The plasma generation system of claim 10, wherein when the antenna module receives power, a point at which the potential of the reactance component relative to the first end is minimum is located at the innermost turn of each of the first coil structure to the Nth coil structure.

12. 11. The plasma generation system of claim 10, wherein each of the first through Mth interlayer capacitors has a third composite reactance.

13. The plasma generation system of claim 12 , wherein a sum of the first and second combined reactances is equal to the third combined reactance.

14. The plasma generation system of claim 10 , wherein the first resultant reactance is greater than the second resultant reactance.

15. the at least one first electrical element is directly connected to a first innermost turn of the first coil structure; 15. The plasma generation system of claim 14, wherein the at least one second electrical element is directly connected to an Nth outermost turn of the Nth coil structure.

Images