SUBSTRATE HOLDING DEVICE, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE HOLDING METHOD, SUBSTRATE PROCESSING METHOD, AND ARTICLE MANUFACTURING METHOD

Abstract

To provide a technique which is advantageous in terms of distortion of a substrate and throughput in a process of holding a substrate on a chuck. [Solution] A substrate holding device that holds a substrate includes a chuck that supports the substrate, pins protruding from the chuck, and a control unit that controls evacuation of the space between the substrate and the chuck, wherein the control unit controls to perform a first evacuation operation to evacuate the space with a first evacuation pressure, and after the first evacuation operation, a second evacuation operation to evacuate the space with a second evacuation pressure lower than the first evacuation pressure, and the second evacuation operation is performed between the time when the amount of protrusion of the pins begins to decrease and the time when the chuck and the substrate come into contact.

Description

[Technical field]

[0001] The present invention relates to a substrate holding device, a substrate processing apparatus, a substrate holding method, a substrate processing method, and an article manufacturing method. [Background technology]

[0002] In the manufacturing process of semiconductor devices, liquid crystal display devices, and the like, a chuck is used to hold a substrate by vacuum suction. When a substrate is held by such a chuck, depending on the strength of the vacuum suction, stress may be applied to the substrate, causing distortion of the substrate. Patent Document 1 discloses a method in which the substrate is clamped to a support structure (chuck) on a substrate table, and after waiting a certain amount of time, the clamping force of the chuck is temporarily reduced. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-227554 A Summary of the Invention [Problem to be solved by the invention]

[0004] In addition to reducing distortion of the substrate, an apparatus having a chuck is required to improve throughput. The method described in Patent Document 1 is disadvantageous in terms of throughput.

[0005] SUMMARY OF THE PRESENT EMBODIMENTS Accordingly, an object of the present invention is to provide a technique that is advantageous in terms of substrate distortion and throughput during processing in which a substrate is held by a chuck. [Means for solving the problem]

[0006] In order to achieve the above-mentioned object, a substrate holding device as one aspect of the present invention is a substrate holding device that holds a substrate, and includes a chuck that supports the substrate, pins protruding from the chuck, and a control unit that controls evacuation of a space between the substrate and the chuck, wherein the control unit controls to perform a first evacuation operation to evacuate the space with a first evacuation pressure, and after the first evacuation operation, a second evacuation operation to evacuate the space with a second evacuation pressure lower than the first evacuation pressure, and the second evacuation operation is performed between the start of a decrease in the amount of protrusion of the pins and the contact between the chuck and the substrate.

[0007] Further objects and other aspects of the present invention will become apparent from the following description of preferred embodiments with reference to the accompanying drawings. Effect of the Invention

[0008] According to the present invention, for example, it is possible to provide a technique that is advantageous in terms of distortion of a substrate and throughput in a process in which a substrate is held by a chuck. [Brief description of the drawings]

[0009] [Figure 1] Schematic diagram showing a configuration example of an exposure apparatus (substrate processing apparatus) [Diagram 2] Schematic diagram showing a configuration example of a substrate transport system [Diagram 3] Schematic diagram showing a configuration example of a substrate holding unit [Figure 4] Schematic diagram showing a configuration example of a substrate holding unit [Diagram 5] Schematic diagram showing a configuration example of a substrate chuck [Figure 6] FIG. 1 is a diagram for explaining a substrate holding process in the first embodiment; [Figure 7] FIG. 1 is a diagram for explaining a substrate holding process in the first embodiment; [Figure 8] FIG. 13 is a diagram showing an example of an exhaust operation in the substrate mounting process in the first embodiment; [Figure 9] FIG. 13 is a diagram showing a modified example of the exhaust operation in the substrate mounting process in the first embodiment. [Figure 10] FIG. 11 is a diagram showing an example of an exhaust operation in a substrate mounting process according to the second embodiment; [Figure 11] FIG. 13 is a diagram showing a modified example of the exhaust operation in the substrate mounting process in the second embodiment. [Figure 12] FIG. 13 shows the monitoring results of a pressure sensor during a substrate mounting process. [Figure 13] FIG. 13 is a diagram for explaining a substrate holding process in the fourth embodiment; [Figure 14] FIG. 13 is a diagram showing an example of an exhaust operation in a substrate mounting process according to the fourth embodiment; [Figure 15] FIG. 13 is a diagram for explaining a substrate holding process in the fifth embodiment; [Figure 16] FIG. 13 is a diagram showing an example of an exhaust operation in a substrate mounting process in the fifth embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] In this specification and the accompanying drawings, directions are shown in an XYZ coordinate system in which the direction parallel to the surface of the chuck (substrate holding surface) that holds the substrate is the XY plane. The directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are the X direction, Y direction, and Z direction, respectively, and the rotation around the X-axis, the rotation around the Y-axis, and the rotation around the Z-axis are θX, θY, and θZ, respectively. Control and drive (movement) about the X-axis, Y-axis, and Z-axis respectively mean control or drive (movement) about the direction parallel to the X-axis, the direction parallel to the Y-axis, and the direction parallel to the Z-axis. In addition, control or drive about the θX-axis, θY-axis, and θZ-axis respectively mean control or drive about the rotation around the axis parallel to the X-axis, the rotation around the axis parallel to the Y-axis, and the rotation around the axis parallel to the Z-axis.

[0012] First Embodiment A substrate processing apparatus according to a first embodiment of the present invention will be described. In this embodiment, an exposure apparatus, which is one of lithography apparatuses for manufacturing semiconductor devices, liquid crystal display devices, etc., will be described as an example of a substrate processing apparatus for processing substrates. The exposure apparatus is an apparatus that performs exposure processing by exposing a substrate to light and transferring a pattern of an original onto the substrate by a step-and-scan method or a step-and-repeat method.

[0013] Here, the substrate processing apparatus according to the present invention is not limited to an exposure apparatus, and may be other types of lithography apparatuses such as an imprint apparatus or a drawing apparatus. The imprint apparatus is an apparatus that performs an imprint process in which an imprint material supplied on a substrate is brought into contact with a mold and energy for curing is applied to the imprint material, thereby forming a pattern of a cured material to which a pattern of the mold is transferred, on the substrate. The drawing apparatus is an apparatus that performs a drawing process in which a pattern (latent image pattern) is formed on the substrate by drawing on the substrate with a charged particle beam (electron beam) or a laser beam. The substrate processing apparatus according to the present invention may be an apparatus other than a lithography apparatus, such as various precision processing apparatuses and various precision measurement apparatuses. The precision processing apparatus is an apparatus that performs a processing process for processing a substrate. The precision measurement apparatus is an apparatus that performs a measurement process for measuring a substrate.

[0014] 1 is a schematic diagram showing an example configuration of an exposure apparatus 100 of the present embodiment. The exposure apparatus 100 of the present embodiment may include a substrate holding unit 10 that holds a substrate S, a processing unit 20 that processes the substrate S, and a controller 30. The exposure apparatus 100 may also include an original transport system 40 that transports an original R to the processing unit 20, and a substrate transport system 50 that transports the substrate S to the substrate holding unit 10. Note that a reticle, a mask, or the like may be used as the original R, and a wafer, a glass plate, or the like may be used as the substrate S.

[0015] The substrate holding part 10 may include a substrate chuck 11, a substrate stage 12, and pins 13. Although three pins 13 are provided in the substrate holding part 10 of the present embodiment, the present invention is not limited thereto, and four or more pins 13 may be provided.

[0016] The substrate chuck 11 has a holding surface 11a (substrate holding surface) that holds the substrate S, and exhaust holes 11b that exhaust the space above the substrate chuck 11 in order to hold the substrate S by vacuum suction. In the following, exhausting the space above the substrate chuck 11 through the exhaust holes 11b may be simply referred to as "exhaust." The detailed configuration of the substrate chuck 11 will be described later.

[0017] The substrate stage 12 is composed of a fine movement stage 12a and a coarse movement stage 12b. The fine movement stage 12a supports the substrate chuck 11 and is configured to be movable on the fine movement stage 12b. The substrate stage 12 may include a drive mechanism (e.g., a linear motor) for translating the fine movement stage 12a in the X, Y, and Z directions and for rotating the fine movement stage 12a in the θX, θY, and θZ directions. The coarse movement stage 12b is configured to be movable on the base 14. The substrate stage 12 may include a drive mechanism (e.g., a linear motor) for translating the coarse movement stage 12b in the X, Y, and Z directions and for rotating the coarse movement stage 12b in the θX, θY, and θZ directions.

[0018] The pins 13 are members used when the substrate S is transported to the substrate holding unit 10 by the supply hand 51 described later, and when the substrate S is collected from the substrate holding unit 10 by the collection hand 52 described later. The pins 13 are extended along the Z direction and fixed to the coarse movement stage 12b, and are configured to protrude from the holding surface 11a of the substrate chuck 11 and hold the substrate S by vacuum suction. The amount of protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 can be controlled by driving the substrate chuck 11 and the pins 13 relatively. In this embodiment, an example will be described in which the fine movement stage 12a supporting the substrate chuck 11 is driven in the Z direction relative to the coarse movement stage 12b to drive the substrate chuck 11 and the pins 13 relatively. However, this is not limited thereto, and for example, the substrate chuck 11 and the pins 13 may be driven relatively by driving the coarse movement stage 12b to which the pins 13 are fixed in the Z direction relative to the fine movement stage 12a.

[0019] Here, the position of the substrate stage 12 (fine movement stage 12a) can be measured by a position measurement unit (not shown). The position measurement unit has, for example, a laser interferometer. In this case, the position measurement unit can measure the position of the substrate stage 12 by irradiating the substrate stage 12 with light and determining the amount of displacement of the substrate stage 12 based on the light reflected by the substrate stage 12. Note that the position measurement unit that measures the position of the substrate stage 12 may have an encoder instead of a laser interferometer. In addition, the relative positions of the fine movement stage 12a and the coarse movement stage 12b are measured by, for example, a capacitance sensor, and the position of the coarse movement stage 12b is controlled so as to follow the position of the fine movement stage 12a based on the measurement result. The pin 13 is fixed to the coarse movement stage 12b and therefore moves together with the coarse movement stage 12b.

[0020] The processing unit 20 is a unit that forms a pattern on the substrate S held by the substrate holding unit 10. The processing unit 20 can include an illumination optical system 21, an original stage 22, a projection optical system 23, and a detection unit 24.

[0021] The illumination optical system 21 illuminates the original R held by the original stage 22 using light emitted from a light source (not shown). The original stage 22 may include an original chuck that holds the original R by vacuum suction or the like, and an original drive mechanism that drives the original chuck to drive the original R. The original drive mechanism may, for example, translate the original R in the X direction, the Y direction, and the Z direction, or rotate the original R in the θX direction, the θY direction, and the θZ direction. The drive in each direction may be controlled independently. The projection optical system 23 projects an image of the pattern of the original R illuminated by the illumination optical system 21 onto the substrate S held by the substrate holder 10. The detection unit 24 is, for example, an off-axis scope, and detects an alignment mark provided on the substrate S.

[0022] Here, the position of the original stage 22 can be measured by a position measurement unit (not shown). The position measurement unit has, for example, a laser interferometer. In this case, the position measurement unit can measure the position of the original stage 22 by irradiating light onto the original stage 22 and determining the amount of displacement of the original stage 22 based on the light reflected by the original stage 22. Note that the position measurement unit of the original stage 22 may have an encoder instead of a laser interferometer.

[0023] The control unit 30 is composed of a computer (information processing device) having a processor such as a CPU (Central Processing Unit) and a memory, and performs overall control of the exposure process by controlling each part of the exposure apparatus 100. The control unit 30 may be composed of, for example, a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), or an ASIC (abbreviation for Application Specific Integrated Circuit), or a general-purpose computer with a built-in program, or a combination of all or part of these.

[0024] Moreover, the control unit 30 of this embodiment has an instruction unit 31, a storage unit 32, and an information processing unit 33. The instruction unit 31 controls each unit of the exposure apparatus 100. The storage unit 32 stores various information and data. The information processing unit 33 calculates the drive target positions of the substrate stage 12 and the original stage 22, and executes the exposure sequence and / or the supply and recovery sequence of the substrate S recorded in the storage unit 32 in a predetermined order. Note that, in the present embodiment, an example has been shown in which the control unit 30 has the storage unit 32 and the information processing unit 33, but the storage unit 32 and the information processing unit 33 may be provided separately from the control unit 30.

[0025] The original transport system 40 may include an original hand 41 , an original pre-alignment stage 42 , an original transport robot 43 , and a storage unit 44 .

[0026] The original transport robot 43 is an articulated robot. The original transport robot 43 has a hand that holds the original R, and can move this hand to any position in the XYZ space. The storage unit 44 is a platform that stores the original R, and the original R that has been transported from outside the apparatus is placed in the storage unit 44. The original R placed in the storage unit 44 is placed on the original pre-alignment stage 42 by the original transport robot 43, which is also an articulated robot.

[0027] At the original pre-alignment stage 42, the positional relationship between the original R and the original pre-alignment stage 42 is measured by observing the marks on the original R with a microscope (scope). After measurement, the original hand 41 holds the original R on the original pre-alignment stage 42, and moves to a position where it will hand over the original R to the original stage 22. The original hand 41 then moves in the -Z direction to hand over (transport) the original R to the original stage 22. The original stage 22 holds the original R by vacuum suction. The deviations in the X, Y, and θZ directions of the original R relative to the original pre-alignment stage 42, which are measured at the original pre-alignment stage 42, can be corrected by the position on the original stage 22 to which the original hand 41 transports the original R.

[0028] The substrate transport system 50 may include a supply hand 51 (transport hand), a collection hand 52, a pre-alignment unit 53, a transport robot 54, a temporary placement table 55, and a storage unit 56. FIG.

[0029] The substrate S is stored in a storage section 56. The transport robot 54 is an articulated robot. The transport robot 54 has a hand that holds the substrate S, and can move this hand to any position in the XYZ space. The transport robot 54 takes the substrate S from the storage section 56 and places the substrate S on the pre-alignment unit 53. The pre-alignment unit 53 irradiates a peripheral portion of the substrate S with measurement light and measures the reflected light from the peripheral portion with a sensor, thereby measuring the outer position of the substrate S relative to the pre-alignment unit 53.

[0030] The supply hand 51 is a transport mechanism for delivering (transporting) the substrate S from the pre-alignment unit 53 to the substrate holding part 10. The supply hand 51 receives the substrate S from the pre-alignment unit 53, holds it by vacuum suction, and delivers (transports) the substrate S onto the pins 13 protruding from the holding surface 11a of the substrate chuck 11 in the substrate holding part 10.

[0031] The recovery hand 52 is a transport mechanism for transferring (transporting) the substrate S from the substrate holding unit 10 to the temporary placement table 55. The recovery hand 52 receives the substrate S from on the pins 13 protruding from the holding surface 11a of the substrate chuck 11 in the substrate holding unit 10, holds it by vacuum suction, and transfers (transports) it to the temporary placement table 55. The temporary placement table 55 is a table for temporarily placing the substrate S recovered from the substrate holding unit 10 by the recovery hand 52. The transport robot 54 holds the substrate S placed on the temporary placement table 55 by the recovery hand 52 and transports it to the storage unit 56.

[0032] Next, the configuration of the substrate holding part 10 and the substrate holding process (substrate holding method) for making the substrate chuck 11 hold the substrate S will be described. Here, the substrate holding part 10 (at least the substrate chuck 11 and the pins 13) and the control part 30 can constitute a substrate holding device for holding the substrate S. Also, the substrate processing method for processing a substrate in the exposure apparatus 100 (substrate processing device) includes a holding step of making the substrate chuck 11 hold the substrate S using the substrate holding method described below, and a processing step of processing the substrate S held by the substrate chuck 11 in the holding step by the processing part 20.

[0033] FIG. 3 is a schematic diagram showing a configuration example of the substrate holding unit 10. The substrate chuck 11 is configured to hold the substrate S by vacuum suction. Specifically, the substrate chuck 11 is configured to hold the substrate S by exhausting the space above the substrate chuck 11 (i.e., the space between the substrate chuck 11 and the substrate S placed on the pins 13 protruding from the holding surface 11a). The substrate chuck 11 is provided with an exhaust hole 11b for exhausting the space above the substrate chuck, and a pipe 61 is connected to the exhaust hole 11b. The substrate chuck 11 is held by the fine movement stage 12a by vacuum suction. The fine movement stage 12a is disposed on the coarse movement stage 12b. A pressure sensor 62, a first exhaust system 63a, and a second exhaust system 63b are provided in the coarse movement stage 12b. The first exhaust system 63a has an electromagnetic valve 64a and a regulator 65a, and the second exhaust system 63b has an electromagnetic valve 64b and a regulator 65b.

[0034] The pipe 61 is connected to a vacuum pump P which is a negative pressure generating means. The vacuum pump P is disposed outside the coarse movement stage 12b, and can be configured as, for example, factory equipment. The pressure sensor 62 monitors (detects) the internal pressure of the pipe 61. The pressure sensor 62 is disposed so as to detect the internal pressure of the pipe 61 between the portion where the pipe 61 branches off to each exhaust hole 11b of the substrate chuck 11 and the solenoid valves 64a to 64b of each exhaust system 63a to 63b. The pressure sensor 62 may be understood as detecting the pressure of the space above the substrate chuck 11.

[0035] The first exhaust system 63a (solenoid valve 64a, regulator 65a) and the second exhaust system 63b (solenoid valve 64b, regulator 65b) are arranged in parallel on the pipe 61 between the vacuum pump P and the substrate chuck 11 (exhaust hole 11b). In the first exhaust system 63a, the regulator 65a is a mechanism for adjusting the inside of the pipe 61 to a desired vacuum pressure (exhaust pressure), and is configured to be able to arbitrarily set (change) the desired vacuum pressure. The solenoid valve 64a is arranged closer to the substrate chuck 11 than the regulator 65a, and is controlled by the control unit 30. The solenoid valve 64a performs ON / OFF control for switching whether or not the vacuum pressure adjusted by the regulator 65a is supplied to the substrate chuck 11 (exhaust hole 11b). Specifically, when the solenoid valve 64a is turned ON, the vacuum pressure adjusted by the regulator 65a is supplied to the substrate chuck 11 (exhaust hole 11b). On the other hand, when the solenoid valve 64a is turned OFF, the vacuum pressure regulated by the regulator 65a is no longer supplied to the substrate chuck 11 (exhaust hole 11b). The configurations of the solenoid valve 64b and the regulator 65b in the second exhaust system 63b are similar to the configurations of the solenoid valve 64a and the regulator 65a in the first exhaust system 63a.

[0036] The vacuum pressures adjusted by the regulators 65a-65b in the first exhaust system 63a and the second exhaust system 63b may be the same or different. For example, the vacuum pressure adjusted by the regulator 65b in the second exhaust system 63b may be lower than the vacuum pressure adjusted by the regulator 65a in the first exhaust system 63a. That is, the second exhaust system 63b may be configured (set) so that the exhaust capacity through the exhaust hole 11b is lower than that of the first exhaust system 63a.

[0037] Here, the substrate holding unit 10 in FIG. 3 has a configuration in which the first exhaust system 63a and the second exhaust system 63b are connected to the substrate chuck 11 via a common pipe 61 (one-system pipe configuration), but is not limited thereto. For example, the substrate holding unit 10 may have a configuration in which the first exhaust system 63a and the second exhaust system 63b are connected to the substrate chuck 11 via separate pipes 61a to 61b (two-system pipe configuration) as shown in FIG. 4. Specifically, in the substrate holding unit 10 in FIG. 4, the first exhaust system 63a including the solenoid valve 64a and the regulator 65a is disposed on the pipe 61a, and the second exhaust system 63b including the solenoid valve 64b and the regulator 65b is disposed on the pipe 61b. Each of the pipes 61a to 61b is connected to a vacuum pump P. The internal pressure of the pipe 61a is monitored (detected) by a pressure sensor 62a, and the internal pressure of the pipe 61b is monitored (detected) by a pressure sensor 62b.

[0038] In the configuration of Figures 3 and 4, by turning on the solenoid valve 64a and turning off the solenoid valve 64b, only the vacuum pressure adjusted by the regulator 65a of the first exhaust system 63a is supplied to the substrate chuck 11 (exhaust hole 11b) through the pipe 61 (61a). On the other hand, by turning off the solenoid valve 64a and turning on the solenoid valve 64b, only the vacuum pressure adjusted by the regulator 65b of the second exhaust system 63b is supplied to the substrate chuck 11 (exhaust hole 11b) through the pipe 61 (61b). In other words, according to the configuration of Figures 3 and 4, it is possible to quickly (high-speed) switch the exhaust pressure when exhausting through the exhaust hole 11b, simply by controlling the ON / OFF of the solenoid valves 64a and 64b.

[0039] In Figs. 3 and 4, a configuration having two exhaust systems 63a-63b is shown, but the present invention is not limited thereto and may be a configuration having three or more exhaust systems. In addition, each exhaust system is configured by a combination of a solenoid valve and a regulator, but the present invention is not limited thereto and may be a servo valve whose opening degree can be freely set, or a proportional solenoid valve whose opening degree can be controlled in proportion to a current. Of course, a combination of these may be used. For example, one of the multiple exhaust systems may be configured by using a combination of a solenoid valve and a regulator, and the other may be configured by using a servo valve or a proportional solenoid valve. By combining these elements, the degree of freedom of the vacuum pressure (exhaust pressure) to be set can be increased.

[0040] Fig. 5 is a schematic diagram showing a configuration example of the substrate chuck 11. Fig. 5(a) shows a view of the substrate chuck 11 as seen from the +Z direction. Fig. 5(b) shows an AA cross-sectional view of the substrate chuck 11 shown in Fig. 5(a).

[0041] The substrate chuck 11 has exhaust holes 11b for exhausting the space above the substrate chuck 11 in order to hold the substrate S by vacuum suction, and openings 11c from which the pins 13 protrude. In the example of Fig. 5, twelve exhaust holes 11b are arranged circumferentially, but the number and arrangement of the exhaust holes 11b are not limited to the example of Fig. 5. The number and arrangement of the openings 11c are also not limited to the example of Fig. 5, and can be set appropriately depending on the number and arrangement of the pins 13.

[0042] The substrate chuck 11 is provided with a plurality of support pins 11d and a seal portion 11e. The support pins 11d are protrusions for supporting the substrate S, and the substrate S is disposed on the upper surfaces of the support pins 11d. The upper surfaces of the support pins 11d may be understood as the holding surface 11a of the substrate chuck 11. The seal portion 11e is a member for reducing the intrusion of gas (atmosphere) from the outside and maintaining a vacuum pressure between the substrate S and the substrate chuck 11 in a state where the substrate S is disposed on the support pins 11 (i.e., a state where the substrate S is held by the substrate chuck 11). The seal portion 11e is configured in an annular shape so as to follow the peripheral portion of the substrate S disposed on the support pins 11d, and may be configured so that the height of the upper surface of the seal portion 11e is lower than the height of the upper surfaces of the support pins 11d. The substrate chuck 11 may be configured without the seal portion 11e, or may be configured with a plurality of seal portions 11e. In other words, the presence or absence, number, and arrangement of the seal portions 11e are not limited to those shown in the example of FIG.

[0043] When the substrate chuck 11 configured in this manner holds the substrate S, the first exhaust system 63a or the second exhaust system 63b exhausts air through the exhaust holes 11b, creating a vacuum between the support pins 11d. Therefore, the substrate chuck 11 can hold the substrate S with a uniform force over the entire substrate S. In addition, the seal portion 11e reduces the intrusion of gas from the outside between the substrate S and the substrate chuck 11, and the vacuum pressure between the substrate S and the substrate chuck 11 can be maintained. Since the upper surfaces of the support pins 11d are higher than the upper surface of the seal portion 11e, the seal portion 11e and the substrate S do not come into contact with each other when the substrate S is held by the substrate chuck 11.

[0044] 6 is a diagram for explaining a substrate holding process for holding a substrate S on the substrate chuck 11. The substrate holding process includes a substrate mounting process (substrate mounting step) in which the substrate S is placed on the pins 13 protruding from the holding surface 11a of the substrate chuck 11, and then the substrate S is mounted on the substrate chuck 11 by reducing the amount of protrusion of the pins 13 from the holding surface 11a. FIGS. 6(a) to (c) show the substrate mounting process in chronological order. The substrate holding process can be controlled by the control unit 30.

[0045] Here, the pin 13 has an exhaust hole at its tip, and the exhaust hole is connected to the vacuum pump P via a pipe 71. An electromagnetic valve 74 and a regulator 75 are arranged on the pipe 71 between the vacuum pump P and the pin 13. The regulator 75 is configured to be able to adjust the vacuum pressure to a desired level. The electromagnetic valve 74 is arranged closer to the pin 13 than the regulator 75, and the control unit 30 performs ON / OFF control to switch whether or not the vacuum pressure adjusted by the regulator 65a is supplied to the pin 13. When the electromagnetic valve 74 is turned ON, the vacuum pressure adjusted by the regulator 75 is supplied to the pin 13. On the other hand, when the electromagnetic valve 74 is turned OFF, the vacuum pressure adjusted by the regulator 75 is no longer supplied to the pin 13. In addition, in order to monitor the pressure between the pin 13 and the substrate S, a pressure sensor 72 is provided to monitor (detect) the internal pressure of the pipe 71. The pressure sensor 72 is arranged to detect the internal pressure of the pipe 71 on the pin 13 side than the electromagnetic valve 74. In FIG. 6, the pressure sensor 72, the solenoid valve 74, and the regulator 75 are arranged outside the coarse movement stage 12b, but the present invention is not limited to this and they may be arranged inside the coarse movement stage 12b.

[0046] 6(a) shows a state in which the pins 13 protrude from the holding surface 11a of the substrate chuck 11 as a result of driving the fine movement stage 12a in the -Z direction. When the substrate S is placed (transported) on the pins 13 by the substrate transport system 50, the control unit 30 causes the pins 13 to hold the substrate S by turning on the solenoid valve 74. Then, the control unit 30 drives the fine movement stage 12a in the +Z direction to reduce the amount by which the pins 13 protrude from the holding surface 11a.

[0047] 6(b)-(c) show a state in which the protrusion amount of the pins 13 from the holding surface 11a is reduced by driving the fine movement stage 12a in the +Z direction. When the fine movement stage 12a is driven in the +Z direction, as shown in FIG. 6(b), the upper surfaces of the pins 13 become flush with the holding surface 11a of the substrate chuck 11, and the substrate S starts to come into contact with the substrate chuck 11. At this time, the control unit 30 turns off the solenoid valve 74, and releases the holding of the substrate S by the pins 13. Then, when the fine movement stage 12a is further driven in the +Z direction, as shown in FIG. 6(c), the upper surfaces of the pins 13 become lower than the holding surface 11a of the substrate chuck 11, and the pins 13 are stored in the substrate chuck 11. This allows the substrate S to be mounted on the holding surface 11a of the substrate chuck 11. Here, the fine movement stage 12a can move in the Z direction while tilting in accordance with the positional relationship with the three pins 13 in the Z direction. The pin 13 is fixed to a coarse movement stage 12b that is movable in the X and Y directions. The relative position in the Z direction between the fine movement stage 12a and the coarse movement stage 12b, i.e., the amount of protrusion of the pin 13 from the holding surface 11a, can be measured by a sensor such as an interferometer, a capacitance sensor, or an encoder.

[0048] FIG. 6 shows an example in which the substrate S is mounted on the substrate chuck 11 by driving the fine movement stage 12a relative to the coarse movement stage 12b. However, the mounting of the substrate S on the substrate chuck 11 may be performed in any manner as long as the relative position between the substrate chuck 11 and the pins 13 in the Z direction can be changed. For example, as shown in FIG. 7, the pins 13 (whole or tip) may be driven in the Z direction relative to the substrate chuck 11 (fine movement stage 12a). FIGS. 7(a) to (c) show an example of a substrate mounting process performed by driving the pins 13 in the -Z direction relative to the substrate chuck 11 in a time series. The change in the relative position between the substrate chuck 11 and the pins 13 in the Z direction can be performed by a driving mechanism that drives the substrate chuck 11 and the pins 13 relatively in the Z direction. In the following, driving the tip of the pin 13 relative to the substrate chuck 11 may be expressed as driving the pins 13.

[0049] FIG. 7(a) shows a state in which the pins 13 protrude from the holding surface 11a of the substrate chuck 11 by driving the pins 13 in the +Z direction. When the substrate S is placed (transported) on the pins 13 by the substrate transport system 50, the control unit 30 causes the pins 13 to hold the substrate S by turning on the solenoid valve 74. Then, the control unit 30 drives the pins 13 in the -Z direction to reduce the amount of protrusion of the pins 13 from the holding surface 11a. When the pins 13 are driven in the -Z direction, as shown in FIG. 7(b), the upper surface of the pins 13 becomes flush with the holding surface 11a of the substrate chuck 11, and the substrate S starts to come into contact with the substrate chuck 11. At this time, the control unit 30 turns off the solenoid valve 74 to release the pins 13 from holding the substrate S. Then, when the pin 13 is further driven in the -Z direction, as shown in Fig. 7(c), the upper surface of the pin 13 becomes lower than the holding surface 11a of the substrate chuck 11, and the pin 13 is stored in the substrate chuck 11. This allows the substrate S to be mounted on the holding surface 11a of the substrate chuck 11. Note that, although Fig. 7 shows an example in which the tip portion of the pin 13 is driven in the -Z direction, the entire pin 13 may be driven in the -Z direction. Also, the driving mechanism for driving the pin 13 may be provided in the pin 13 itself, or may be provided outside the pin 13 (for example, the coarse movement stage 12b).

[0050] Incidentally, in the substrate mounting process, when the amount of protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 is reduced, it is preferable from the viewpoint of the throughput (productivity) of the exposure apparatus 100 that the relative speed between the substrate chuck 11 and the pins 13 in the Z direction is as fast as possible. However, if the relative speed between the substrate chuck 11 and the pins 13 in the Z direction is fast, the gap between the holding surface 11a of the substrate chuck 11 and the substrate S also narrows faster, and the air pressure in the space between the holding surface 11a and the substrate S increases. In this case, the air pressure in the space increases, so that the substrate S may slip (shift) on the pins 13. If the substrate S slips on the pins, the substrate S may fall off the pins 13 or the pins 13 may wear out. In addition, when the substrate S is mounted on the substrate chuck 11, the multiple support pins 11d in the substrate chuck 11 may wear out. Therefore, during the period from when the protrusion of the pins 13 from the holding surface 11a starts to decrease until the holding surface 11a starts to come into contact with the substrate S, it is preferable to perform exhaust via the exhaust holes 11b of the substrate chuck 11. The exhaust pressure at this time is preferably set so as to reduce lateral sliding of the substrate S on the pins 13.

[0051] On the other hand, if exhaust is performed through the exhaust holes 11b with an exhaust pressure capable of reducing the lateral slippage of the substrate S on the pins 13, the substrate S will be distorted when the holding surface 11a of the substrate chuck 11 starts to come into contact with the substrate S. In other words, the substrate S will be held by the substrate chuck 11 in a distorted state. In addition, a large frictional force will be generated at the contact surface between the holding surface 11a and the substrate S, which may cause wear of the substrate chuck 11. Therefore, it is preferable to reduce the exhaust pressure when the holding surface 11a of the substrate chuck 11 starts to come into contact with the substrate S.

[0052] Therefore, the substrate mounting process of this embodiment includes a first exhaust operation and a second exhaust operation performed after the first exhaust operation. The first exhaust operation is an exhaust operation in which the space above the substrate chuck 11 is exhausted through the exhaust holes 11b with an exhaust pressure of a first set value. The second exhaust operation is an exhaust operation in which the space above the substrate chuck 11 is exhausted through the exhaust holes 11b with an exhaust pressure of a second set value that is smaller than the first set value. The first exhaust operation is switched to the second exhaust operation during the period from when the protrusion amount of the pins 13 from the holding surface 11a of the substrate chuck 11 starts to decrease until the holding surface 11a starts to contact the substrate S. This makes it possible to simultaneously reduce distortion of the substrate S when the substrate S is held by the substrate chuck 11 and improve throughput.

[0053] In the substrate mounting process, there are a state where there is a gap between the substrate chuck 11 and the substrate S, and a state where the substrate chuck 11 and the substrate S are in contact with each other. In this embodiment, the first exhaust operation is switched to the second exhaust operation at the timing when the substrate chuck 11 and the substrate S start to come into contact with each other or before the start of the contact. The exhaust pressure is the pressure at which the space above the substrate chuck 11 is exhausted (intaken) through the exhaust hole 11b, and may be understood as the flow rate or flow velocity of the gas exhausted from the space through the exhaust hole 11b. The exhaust pressure is determined by the values ​​(flow rate, flow velocity) set in the regulator 65a of the first exhaust system 63a and the regulator 65b of the second exhaust system 63b.

[0054] Fig. 8 shows an example of the first exhaust operation and the second exhaust operation of the substrate mounting process. In Fig. 8, the Z direction position of the fine movement stage 12a is shown on the horizontal axis, and the exhaust pressure is shown on the vertical axis. The "Z direction position of the fine movement stage 12a" shown on the horizontal axis of Fig. 8 may be understood as the position of the holding surface 11a of the substrate chuck 11 in the Z direction. The horizontal axis of Fig. 8 may also be understood as the amount of protrusion of the pin 13 from the holding surface 11a of the substrate chuck 11 in the Z direction, or the distance between the holding surface 11a and the substrate S.

[0055] In the substrate mounting process, when the fine movement stage 12a starts to be driven in the +Z direction, that is, when the amount of protrusion of the pins 13 from the holding surface 11a starts to decrease, a first exhaust operation is started. In the first exhaust operation, exhaust is performed at an exhaust pressure of a first set value so as to reduce the lateral slippage of the substrate S on the pins 13 caused by the wind pressure generated by the high-speed movement of the fine movement stage 12a. The first set value is set to a value that can keep the amount of lateral slippage (shift amount) of the substrate S on the pins 13 within an allowable range during the period from when the amount of protrusion of the pins 13 starts to decrease until the substrate S starts to come into contact with the holding surface 11a of the substrate chuck 11. This makes it possible to reduce the lateral slippage of the substrate S on the pins 13.

[0056] The exhaust amount in the first exhaust operation (the flow rate of the gas exhausted through the exhaust hole 11b) is preferably equal to or greater than the flow rate of the gas pushed out from the space above the substrate chuck 11 by driving the fine movement stage 12a in the +Z direction (hereinafter, sometimes referred to as the gas extrusion amount). However, depending on the arrangement of the piping system in the apparatus, it may be difficult to make the exhaust amount in the first exhaust operation greater than the gas extrusion amount. In this case, the exhaust amount in the first exhaust operation should be set in consideration of the holding of the substrate S by the pins 13. For example, since the substrate S is vacuum-sucked by the pins 13, if the exhaust amount in the first exhaust operation is greater than or equal to the value obtained by subtracting the vacuum suction amount of the substrate S by the pins 13 from the gas extrusion amount, the lateral slippage of the substrate S on the pins 13 can be reduced.

[0057] Next, the second exhaust operation is started at the timing when the Z direction position of the fine movement stage 12a reaches the first position. That is, the first exhaust operation is switched to the second exhaust operation at this timing. In the second exhaust operation, exhaust is performed at an exhaust pressure of a second set value smaller than the first set value so that distortion of the substrate S caused by holding the substrate S by the substrate chuck 11 is reduced. The second set value is set to a value that can keep the amount of distortion of the substrate S caused by holding the substrate S by the substrate chuck 11 within an allowable range. This makes it possible to reduce distortion of the substrate S caused by holding the substrate S by the substrate chuck 11. In addition, by providing the second exhaust operation, the frictional force between the holding surface 11a of the substrate chuck 11 and the substrate S can be reduced, and wear of the substrate chuck 11 can also be reduced.

[0058] The first position is defined as the Z direction position of the fine movement stage 12a when the holding surface 11a and the substrate S start to come into contact with each other, or a position on the -Z direction side thereof, and is obtained in advance by an experiment, a simulation, or the like, and is stored in the control unit 30 (storage unit 32). In the example of Fig. 8, the first position is defined as the Z direction position of the fine movement stage 12a when the holding surface 11a and the substrate S start to come into contact with each other.

[0059] Here, in FIG. 8, an example is shown in which the fine movement stage 12a is driven in the +Z direction in the substrate mounting process, but the same applies to the case in which the pin 13 is driven in the -Z direction. Since the driving directions are simply opposite when driving the fine movement stage 12a and when driving the pin 13, when driving the pin 13 in the -Z direction, the +Z direction in FIG. 8 can be replaced with the -Z direction for application. In the figures and explanations described later, an example is shown in which the fine movement stage 12a is driven, but when driving the pin 13, the +Z direction can be replaced with the -Z direction for application. Here, in the explanations regarding FIG. 8 and the figures described later, the driving of the fine movement stage 12a can be considered as the movement of the substrate chuck 11, and may be replaced with the driving of the pin 13 or the relative driving of the fine movement stage 12a and the pin 13.

[0060] The exhaust pressure through the exhaust hole 11b can be determined based on the speed of the fine movement stage 12a, the suction holding force of the substrate S by the pins 13, and / or the characteristics of the substrate S. The speed of the fine movement stage 12a tends to be increased in consideration of throughput. When driving at high speed, it is preferable to set the exhaust pressure in the first exhaust operation to a large value. The suction holding force by the pins 13 refers to the vacuum pressure when the pins 13 hold the substrate S by vacuum suction. If the vacuum pressure is low, the substrate S may slip sideways on the pins 13 due to the wind pressure generated during the driving of the fine movement stage 12a. Therefore, it is preferable to set the exhaust pressure in the first exhaust operation to a large value. The characteristics of the substrate S may include the amount of warping, the roughness of the back surface, the type of film formation, the material, and / or the thickness. The exhaust pressure in the second exhaust operation may be appropriately set according to the characteristics of the substrate S. For example, when the substrate S is warped, it is preferable to set the exhaust pressure in the second exhaust operation to a large value. The exhaust pressure in the second exhaust operation may also be set in consideration of the characteristics of the substrate chuck 11. The characteristics of the substrate chuck 11 may include the uniformity of the height of the multiple support pins 11d and / or the presence or absence of a seal portion 11e. For example, when the seal portion 11e is not provided on the holding surface 11a of the substrate chuck 11, the amount of air flowing in from the surroundings increases, so that the exhaust pressure in the second exhaust operation should be set high.

[0061] In the substrate mounting process of this embodiment, an example has been described in which the first exhaust operation is switched to the second exhaust operation while the fine movement stage 12a is being moved, but the present invention is not limited thereto. For example, the first exhaust operation may be performed while the fine movement stage 12a is being moved, and the movement of the fine movement stage 12a may be temporarily stopped at the timing when the Z direction position of the fine movement stage 12a reaches the first position, and the first exhaust operation may be switched to the second exhaust operation in that state. That is, the first exhaust operation may be switched to the second exhaust operation in a state in which the reduction in the protruding amount of the pin 13 from the holding surface 11a of the substrate chuck 11 is temporarily stopped. In the substrate mounting process, the movement speed of the fine movement stage 12a can be freely changed or temporarily stopped. The temporary stop of the movement of the fine movement stage 12a can be performed before the contact between the holding surface 11a of the substrate chuck 11 and the substrate S starts. By temporarily stopping the movement of the fine movement stage 12a before the contact between the substrate chuck 11 and the substrate S starts, the distortion of the substrate S caused by the holding of the substrate S by the substrate chuck 11 can be more reliably reduced.

[0062] The moving speed and the moving pattern of the fine movement stage 12a can be freely set. In both cases where the movement is paused and where the movement is not paused, the lateral slippage of the substrate S on the pins 13 can be reduced, and the distortion of the substrate S that occurs when the substrate chuck 11 and the substrate S start to contact each other can be reduced. In the present embodiment, the exhaust pressure is switched in two stages, the first exhaust operation and the second exhaust operation, but the switching of the exhaust pressure is not limited to two stages, and may be three stages or more. In the present embodiment, an example in which the exhaust pressure is changed in stages (discretely) is shown, but the change of the exhaust pressure may be performed continuously. That is, the change of the exhaust pressure may be performed so that the exhaust pressure changes gradually from the first exhaust pressure (first set value) to the second exhaust pressure (second set value). The continuous change of the exhaust pressure may be performed based on, for example, a graph or table showing a relationship between the exhaust pressure and time that is determined in advance, or based on a specific function.

[0063] Next, a method of switching from the first exhaust operation to the second exhaust operation in the substrate mounting process will be described. As described above with reference to Fig. 3 and Fig. 4, the substrate holding device of this embodiment is provided with a first exhaust system 63a including a solenoid valve 64a and a regulator 65a, and a second exhaust system 63a including a solenoid valve 64a and a regulator 65a.

[0064] For example, the first exhaust operation is performed with both the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b turned on. Then, at the timing when the Z direction position of the fine movement stage 12a reaches the first position, the solenoid valve 64b of the second exhaust system 63b is turned off, and the second exhaust operation is performed with only the solenoid valve 64a of the first exhaust system 63a turned on. Alternatively, at that timing, the solenoid valve 64a of the first exhaust system 63a is turned off, and the second exhaust operation is performed with only the solenoid valve 64b of the second exhaust system 63b turned on. This makes it possible to make the set value of the exhaust pressure in the second exhaust operation (second set value) smaller than the set value of the exhaust pressure in the first exhaust operation (first set value). In this way, turning off one of the solenoid valves from a state in which the two solenoid valves 64a to 64b are turned on has the advantage of allowing smooth switching from the first exhaust operation to the second exhaust operation.

[0065] The vacuum pressure in each of the regulators 65a to 65b may be set according to a first set value and a second set value. For example, when the exhaust pressure of the second set value is set to about half of the exhaust pressure of the first set value, the vacuum pressures in the regulators 65a to 65b may be set to the same value, or the vacuum pressure may be set in consideration of the length of the pipe 61. When the length of the pipe 61 is taken into consideration, the vacuum pressure in the regulators 65a to 65b may be set by comparing the exhaust pressure when the solenoid valves 64a to 64b are turned ON with the exhaust pressure when the solenoid valve 64a is turned ON and the solenoid valve 64b is turned OFF. In this way, the first set value and the second set value may be determined according to the exhaust pressure required for each exhaust operation.

[0066] Also, when the vacuum pressure adjusted by the regulator 65b of the second exhaust system 63b is lower than the vacuum pressure adjusted by the regulator 65a of the first exhaust system 63a, the exhaust system used in the first exhaust operation and the second exhaust operation may be switched. Specifically, in the first exhaust operation, the solenoid valve 64a of the first exhaust system 63a is turned ON and the solenoid valve 64b of the second exhaust system 63b is turned OFF, and the first exhaust operation is performed using only the first exhaust system 63a. Then, at the timing when the Z direction position of the fine movement stage 12a reaches the first position, the solenoid valve 64a of the first exhaust system 63a is turned OFF and the solenoid valve 64b of the second exhaust system 63b is turned ON, and the second exhaust operation is performed in that state. That is, the second exhaust operation is performed using only the second exhaust system 63b.

[0067] Although the setting of the exhaust pressure has been described above using a combination of the solenoid valves 64a-64b and the regulators 65a-65b, the same applies when a servo valve or a proportional solenoid valve is used instead of these. The servo valve and the proportional solenoid valve have the advantage that the opening and closing degree can be freely set, and therefore the number of piping systems can be reduced and the components of the device can be simplified. Also, in the configuration of FIG. 3, a servo valve may be used instead of the solenoid valve 64b and the regulator 65b. In this case, there is an advantage that the opening and closing degree of the servo valve can be changed according to the characteristics of the substrate S, such as the amount of warping of the substrate S.

[0068] As described above, in the substrate holding process (substrate mounting process) of this embodiment, the first exhaust operation is switched to the second exhaust operation during the period from when the protruding amount of the pins 13 from the holding surface 11a of the substrate chuck 11 starts to decrease until the holding surface 11a starts to contact the substrate S. The first exhaust operation reduces the lateral slippage of the substrate S on the pins 13, so that the substrate mounting process can be performed without lowering the speed at which the protruding amount of the pins 13 from the holding surface 11a of the substrate chuck 11 decreases, which can be advantageous in terms of throughput. The second exhaust operation can reduce the distortion of the substrate S that occurs when the substrate S contacts the holding surface 11a of the substrate chuck 11. In addition, the first exhaust operation is switched to the second exhaust operation at the timing when the holding surface 11a starts to contact the substrate S or before the contact starts, which can be advantageous in terms of throughput. In other words, the substrate mounting process of this embodiment is advantageous in terms of the distortion of the substrate S and throughput in the substrate holding process.

[0069] [Variations] 8, the first position is the Z direction position of the fine movement stage 12a at the start of contact between the holding surface 11a and the substrate S. However, the first position can be the Z direction position of the fine movement stage 12a before the start of contact between the holding surface 11a and the substrate S (for example, immediately before the start of contact between the holding surface 11a and the substrate S).

[0070] 9 shows a modified example of the first exhaust operation and the second exhaust operation of the substrate mounting process. In the example of FIG. 9, the first position is defined as the Z direction position of the fine movement stage 12a immediately before the contact between the holding surface 11a and the substrate S starts, and the Z direction position of the fine movement stage 12a at the time when the contact between the holding surface 11a and the substrate S starts is shown after the first position. That is, in the example of FIG. 9, the first exhaust operation is switched to the second exhaust operation at a timing before the contact between the holding surface 11a of the substrate chuck 11 and the substrate S starts. As a result, the switching from the first exhaust operation to the second exhaust operation is performed in a state where there is a gap between the substrate chuck 11 and the substrate S, so that the distortion of the substrate S caused by the holding of the substrate S by the substrate chuck 11 can be more reliably reduced.

[0071] <Second embodiment> A second embodiment of the present invention will be described. In the above first embodiment, an example in which exhaust pressure is switched in two stages, a first exhaust operation and a second exhaust operation, in a substrate mounting process will be described. In this embodiment, an example in which exhaust pressure is switched in three stages by further performing a third exhaust operation after the second exhaust operation in a substrate mounting process will be described. Note that this embodiment basically follows the first embodiment, and can follow the first embodiment except for the matters mentioned below.

[0072] Fig. 10 shows an example of the exhaust operation of the substrate mounting process of this embodiment. In Fig. 10, the horizontal axis indicates the Z direction position of the fine movement stage 12a, and the vertical axis indicates the exhaust pressure. The substrate mounting process of this embodiment further includes a third exhaust operation, which exhausts the space above the substrate chuck 11 with an exhaust pressure of a third set value that is greater than the second set value, after the second exhaust operation.

[0073] 10, in the substrate mounting process of this embodiment, when the fine movement stage 12a starts to be driven in the +Z direction, that is, when the protrusion of the pin 13 from the holding surface 11a starts to decrease, a first exhaust operation is started to perform exhaust with an exhaust pressure of a first set value. Then, when the Z direction position of the fine movement stage 12a reaches the first position, a second exhaust operation is started to perform exhaust with an exhaust pressure of a second set value smaller than the first set value. That is, at that time, the first exhaust operation is switched to the second exhaust operation. The first position can be defined as the Z direction position of the fine movement stage 12a at the start of contact between the holding surface 11a and the substrate S.

[0074] In addition, in the substrate mounting process of this embodiment, when the Z direction position of the fine movement stage 12a reaches the second position, a third exhaust operation is started to exhaust air at an exhaust pressure of a third set value larger than the second set value. That is, at this timing, the second exhaust operation is switched to the third exhaust operation. The third set value is an exhaust pressure set value for the substrate chuck 11 to hold the substrate S by vacuum suction, and can be set to a value larger than the second set value. In this embodiment, the third set value is the same as the first set value, but can be equal to or smaller than the first set value (i.e., the third exhaust pressure can be equal to or smaller than the first exhaust pressure). In addition, the second position is defined as the Z direction position of the fine movement stage 12a after the holding surface 11a and the substrate S start to contact each other, and is stored in the memory unit 32, which is determined in advance. This third exhaust operation can shorten the time until the substrate S is held by the substrate chuck 11 by creating a vacuum state between the substrate chuck 11 and the substrate S, which can be advantageous in terms of throughput.

[0075] Next, a method for switching exhaust operations in the substrate mounting process will be described. As described above with reference to Fig. 3 and Fig. 4, the substrate holding device of this embodiment is provided with a first exhaust system 63a including a solenoid valve 64a and a regulator 65a, and a second exhaust system 63a including a solenoid valve 64a and a regulator 65a.

[0076] For example, the first exhaust operation is performed with both the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b turned ON. Then, at the timing when the Z direction position of the fine movement stage 12a reaches the first position, the solenoid valve 64b of the second exhaust system 63b is turned OFF, and the second exhaust operation is performed with only the solenoid valve 64a of the first exhaust system 63a turned ON. Alternatively, at that timing, the solenoid valve 64a of the first exhaust system 63a is turned OFF, and the second exhaust operation is performed with only the solenoid valve 64b of the second exhaust system 63b turned ON. This makes it possible to make the set value of the exhaust pressure in the second exhaust operation (second set value) smaller than the set value of the exhaust pressure in the first exhaust operation (first set value).

[0077] Moreover, when the Z-direction position of the fine movement stage 12a reaches the second position, the solenoid valve 64a of the first exhaust system 63a is turned ON, and the third exhaust operation is performed with both the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b turned ON. In this case, the first set value and the third set value are the same pressure value. By making the first set value and the third set value the same, there is an advantage that the throughput can be improved without increasing the piping system. However, this is not limited to this, and the first set value and the third set value may be made different from each other. In this case, it is preferable to provide a configuration (three-system piping configuration) in which a third exhaust system is provided in addition to the first exhaust system 63a and the second exhaust system 63b. By controlling the ON / OFF of the three solenoid valves provided in the three-system piping configuration, the first set value, the second set value, and the third set value can be made different from each other. For example, in the first exhaust operation, all three solenoid valves are turned on, in the second exhaust operation, only one solenoid valve is turned on, and in the third exhaust operation, only two solenoid valves are turned on. Of course, the solenoid valves and regulators may be replaced with servo valves or proportional solenoid valves without adding piping. By changing the opening and closing degree between the first exhaust operation and the third exhaust operation, the exhaust pressure in each exhaust operation can be changed.

[0078] Here, in the substrate mounting process of this embodiment, an example in which the exhaust operation is switched while the fine movement stage 12a is being moved has been described, but the present invention is not limited thereto. For example, the first exhaust operation may be performed while the fine movement stage 12a is being moved, and the movement of the fine movement stage 12a may be temporarily stopped at the timing when the Z direction position of the fine movement stage 12a reaches the first position, and the first exhaust operation may be switched to the second exhaust operation in that state. That is, the first exhaust operation may be switched to the second exhaust operation in a state in which the reduction in the protruding amount of the pin 13 from the holding surface 11a of the substrate chuck 11 is temporarily stopped. In addition, after the second exhaust operation is started, the movement of the fine movement stage 12a is started again. Then, the movement of the fine movement stage 12a may be temporarily stopped at the timing when the Z direction position of the fine movement stage 12a reaches the second position, and the second exhaust operation may be switched to the third exhaust operation in that state.

[0079] In addition, in the substrate mounting process of this embodiment, the moving speed of the fine movement stage 12a may be changed. In the first exhaust operation, the moving speed of the fine movement stage 12a is made faster to improve throughput. In the second exhaust operation, the moving speed of the fine movement stage 12a is made slower than that of the first exhaust operation to reduce distortion of the substrate S caused by holding the substrate S by the substrate chuck 11. Then, in the third exhaust operation, the moving speed of the fine movement stage 12a is made faster than that of the second exhaust operation to quickly store the pins 13 in the substrate chuck 11. By changing the moving speed of the fine movement stage 12a in a stepwise manner in this way, it is possible to more reliably reduce distortion of the substrate S caused by holding the substrate S by the substrate chuck 11, and it may also be advantageous in terms of throughput.

[0080] As described above, in the substrate mounting process of this embodiment, the third exhaust operation in which exhaust is performed at an exhaust pressure of a third set value higher than the second set value is performed after the second exhaust operation. This can shorten the time required to create a vacuum state between the substrate chuck 11 and the substrate S and hold the substrate S by the substrate chuck 11, which can be advantageous in terms of throughput.

[0081] [Variations] 10, the first position is the position in the Z direction of the fine movement stage 12a when contact between the holding surface 11a and the substrate S begins. However, the first position can be the position in the Z direction of the fine movement stage 12a before contact between the holding surface 11a and the substrate S begins (for example, immediately before contact between the holding surface 11a and the substrate S begins).

[0082] 11 shows a modified example of the exhaust operation of the substrate mounting process. In the example of FIG. 11, the first position is defined as the Z direction position of the fine movement stage 12a immediately before the contact between the holding surface 11a and the substrate S starts, and the Z direction position of the fine movement stage 12a at the start of contact between the holding surface 11a and the substrate S is shown after the first position. That is, in the example of FIG. 9, the first exhaust operation is switched to the second exhaust operation at a timing before the contact between the holding surface 11a of the substrate chuck 11 and the substrate S starts. As a result, the switching from the first exhaust operation to the second exhaust operation is performed in a state where there is a gap between the substrate chuck 11 and the substrate S, so that the distortion of the substrate S caused by the substrate S being held by the substrate chuck 11 can be more reliably reduced.

[0083] 11, the second position is shown after the Z direction position of the fine movement stage 12a at the start of contact between the holding surface 11a and the substrate S. That is, in the example of FIG. 11, the second exhaust operation is switched to the third exhaust operation at the timing after the start of contact between the holding surface 11a of the substrate chuck 11 and the substrate S. In this case, the second position may be understood as the Z direction position of the fine movement stage 12a in a state in which the upper surface of the pin 13 is lower than the holding surface of the substrate chuck 11. This can shorten the time until the substrate S is held by the substrate chuck 11 after the space between the substrate chuck 11 and the substrate S is vacuumed, which can be advantageous in terms of throughput.

[0084] <Third embodiment> A third embodiment of the present invention will be described. In this embodiment, an example in which the exhaust operation is switched based on the monitoring result (detection result) of the pressure sensor 62 will be described. That is, in this embodiment, the exhaust operation is switched at the timing when the internal pressure of the pipe 61 monitored (detected) by the pressure sensor 62 reaches a pressure threshold. The internal pressure of the pipe 61 may be understood as the exhaust pressure via the exhaust hole 11b. Note that this embodiment basically inherits the first embodiment, and may follow the first embodiment except for the matters mentioned below. In addition, in this embodiment, the second embodiment in which a third exhaust operation is further performed may be applied, and an example in which the second embodiment is applied will be described below.

[0085] Fig. 12 shows the monitoring results of the pressure sensor 62 during the substrate mounting process. In Fig. 12, the horizontal axis represents the Z direction position of the fine movement stage 12a, and the vertical axis represents the exhaust pressure (internal pressure of the pipe 61) detected by the pressure sensor 62.

[0086] In the substrate mounting process, when the amount of protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 decreases and the gap between the substrate chuck 11 and the substrate S in the Z direction narrows, the amount of gas flowing from the outside into the space between the substrate chuck 11 and the substrate S decreases. As a result, the pressure in the space gradually decreases. In this embodiment, when the exhaust pressure detected by the pressure sensor 62 is lower than the first pressure threshold value P TH1 When the exhaust pressure detected by the pressure sensor 62 reaches the second pressure threshold P TH2 When the first pressure threshold P TH1 and the second pressure threshold P TH2 The second pressure threshold P TH2 is the first pressure threshold P TH1 is set to a value smaller than

[0087] Depending on the responsiveness of the pressure sensor 62, there is a concern that even if switching is performed based on a real-time result, the substrate S may be sucked in and distorted with the exhaust pressure of the first set value. TH1 and the second pressure threshold P TH2 is set in advance. Then, when the exhaust pressure detected by the pressure sensor 62 exceeds the first pressure threshold P TH1 When the exhaust pressure detected by the pressure sensor 62 reaches the second pressure threshold P TH2When the pressure reaches the pressure sensor 62, the first exhaust operation is switched to the second exhaust operation. By determining the timing to switch the exhaust operation using the monitoring result (detection result) of the pressure sensor 62 in this manner, it is possible to reduce the lateral slippage of the substrate S on the pins 13 and the distortion of the substrate S when the substrate S is held by the substrate chuck 11.

[0088] First pressure threshold P TH1 The first pressure threshold P can be determined by measuring in advance the relationship between the timing of switching the exhaust pressure from the first set value to the second set value and the amount of lateral slippage of the substrate S on the pins 13, and based on that relationship, to be a value that can reduce the lateral slippage of the substrate S. TH1 may be determined using a simulation. PTH2 The second pressure threshold P can be determined by measuring in advance the relationship between the timing of switching the exhaust pressure from the second set value to the third set value and the amount of distortion of the substrate S, and based on the relationship, to be a value that can reduce distortion of the substrate S. TH2 may be determined using simulation.

[0089] [Variations] In the example of FIG. 12 described above, the timing of switching the exhaust operation is determined based on the monitoring results of the pressure sensor 62. However, instead of the pressure sensor 62, a flow sensor that monitors (detects) the flow rate of the gas flowing inside the pipe 61 may be provided, and the exhaust operation may be switched based on the monitoring results (detection results) of the flow sensor. Specifically, the first exhaust operation is switched to the second exhaust operation when the flow rate monitored (detected) by the flow sensor reaches a first flow rate threshold, and the second exhaust operation is switched to the third exhaust operation when the flow rate monitored (detected) by the flow sensor reaches a second flow rate threshold. The flow rate of the gas flowing inside the pipe 61 may be understood as the exhaust flow rate through the exhaust hole 11b. The first flow rate threshold and the second flow rate threshold are determined based on the first pressure threshold P TH1 and the second pressure threshold P TH2 Similarly, the second flow rate threshold can be set in advance through experiments, simulations, etc. The second flow rate threshold is set to a value smaller than the first flow rate threshold.

[0090] <Fourth embodiment> A fourth embodiment of the present invention will be described. In the above first embodiment, an example was described in which the first exhaust operation is switched to the second exhaust operation during the period from when the protrusion amount of the pins 13 from the holding surface 11a of the substrate chuck 11 starts to decrease until the holding surface 11a starts to contact the substrate S. In this embodiment, an example is described in which the first exhaust operation is switched to the second exhaust operation in a state in which the substrate S is already placed (mounted) on the holding surface 11a of the substrate chuck 11. This embodiment basically follows the first embodiment, and may follow the first embodiment except for the matters mentioned below. In addition, the second embodiment and / or the third embodiment may be applied to this embodiment.

[0091] This embodiment, in which the first exhaust operation is switched to the second exhaust operation while the substrate S is already placed (mounted) on the holding surface 11a of the substrate chuck 11, is particularly effective when a warped substrate S is held by the substrate chuck 11. FIG. 13 is a diagram for explaining a substrate holding process for holding a warped substrate S on the substrate chuck 11. FIGS. 13(a) to 13(c) show the substrate holding process of this embodiment in chronological order. The substrate holding process can be controlled by the control unit 30.

[0092] 13(a) shows a state in which a warped substrate S is placed on the holding surface 11a of the substrate chuck 11. In this state, the peripheral portion (outer periphery) of the substrate S placed (placed) on the substrate chuck 11 (holding surface 11a) is separated from the substrate chuck 11. In this state (i.e., when the outer periphery of the substrate S is not in contact with the substrate chuck 11), a first exhaust operation is started. This reduces the air pressure in the space between the substrate chuck 11 and the substrate S, and the warpage of the substrate S is gradually corrected.

[0093] 13(b)-(c) show a state in which the warpage of the substrate S is gradually corrected. In this embodiment, the first exhaust operation is switched to the second exhaust operation before (for example, just before) the state of FIG. 13(b), i.e., the entire area of ​​the substrate S comes into contact with the substrate chuck 11 (holding surface 11a). This makes it possible to reduce distortion of the substrate S that occurs when the substrate chuck 11 holds the substrate S. Alternatively, the second exhaust operation may be switched to the third exhaust operation after the entire area of ​​the substrate S comes into contact with the substrate chuck 11 (holding surface 11a).

[0094] Here, referring to FIG. 3, a configuration example of the substrate holding unit 10 for holding the substrate S arranged on the substrate chuck 11 will be described. In this embodiment, the first exhaust operation (exhaust pressure of a first set value) is switched to the second exhaust operation (exhaust pressure of a second set value) in a state in which the substrate S is arranged on the holding surface 11a of the substrate chuck 11. As in the first embodiment, the first exhaust operation can be switched to the second exhaust operation by ON / OFF control of the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b. Even in the case of switching from the first exhaust operation to the second exhaust operation in a state in which the substrate S is already arranged on the holding surface 11a of the substrate chuck 11, the distortion of the substrate S that occurs when the substrate S is held by the substrate chuck 11 can be reduced.

[0095] The timing of switching from the first exhaust operation to the second exhaust operation can be determined based on the monitoring results of the pressure sensor 62, as in the third embodiment. For example, when contact between the substrate chuck 11 and the substrate S begins, the exhaust pressure (the internal pressure of the piping 61) changes suddenly. Therefore, depending on the responsiveness of the pressure sensor 62, even if switching is performed based on the real-time result, there is a concern that the substrate S may be held at a high exhaust pressure and distorted. Therefore, in this embodiment, as shown in FIG. 14, a first pressure threshold P TH1 is set in advance, and the exhaust pressure detected by the pressure sensor 62 is equal to or lower than the first pressure threshold P TH1The first exhaust operation is switched to the second exhaust operation when the first pressure threshold P is reached. By determining the timing to switch from the first exhaust operation to the second exhaust operation based on the monitoring result of the pressure sensor 62 in this manner, it is possible to reduce distortion of the substrate S that occurs when the substrate S is held by the substrate chuck 11. TH1 The first pressure threshold P can be determined by measuring in advance the relationship between the timing of switching the exhaust pressure from the first set value to the second set value and the amount of distortion of the substrate S, and based on that relationship, to be a value that can reduce distortion of the substrate S. TH1 may be determined using simulation.

[0096] In this embodiment, as described in the modified example of the third embodiment, a flow sensor that monitors (detects) the flow rate of gas flowing inside the pipe 61 may be provided instead of the pressure sensor 62, and the exhaust operation may be switched based on the monitoring result (detection result) of the flow sensor. Also, in this embodiment, an example in which the exhaust pressure is switched in two stages, the first exhaust operation and the second exhaust operation, has been described, but as described in the second embodiment, the third exhaust operation may be further performed after the second exhaust operation, and the exhaust pressure may be switched in three stages.

[0097] As described above, in the substrate holding process of this embodiment, the first evacuation operation is started in a state in which the peripheral portion of the substrate S placed on the substrate chuck 11 is separated from the substrate chuck 11, and the first evacuation operation is switched to the second evacuation operation before the entire area of ​​the substrate S comes into contact with the substrate chuck 11. This makes it possible to reduce distortion of the substrate S that occurs when the substrate S is held by the substrate chuck 11. Also, this can be advantageous in terms of throughput compared to the case in which the first evacuation operation is switched to the second evacuation operation after the entire area of ​​the substrate S comes into contact with the substrate chuck 11.

[0098] <Fifth embodiment> A fifth embodiment of the present invention will be described. In the above first embodiment, an example has been described in which the substrate S is transported by the supply hand 51 onto the pins 13 protruding from the holding surface 11a of the substrate chuck 11. In this embodiment, an example has been described in which the substrate S is directly transported by the supply hand 51 onto the substrate chuck 11. Note that this embodiment basically follows the first embodiment, and may follow the first embodiment except for the matters mentioned below. In addition, the second embodiment and / or the third embodiment may be applied to this embodiment.

[0099] In this embodiment, the process of mounting the substrate S on the substrate chuck 11 by driving the supply hand 51 holding the substrate S to reduce the gap between the substrate chuck 11 and the substrate S can be defined as a substrate mounting process (substrate mounting step). In the substrate mounting process of this embodiment, the switching from the first exhaust operation to the second exhaust operation is performed in the period from when the gap between the substrate chuck 11 and the substrate S starts to be reduced by driving the supply hand 51 to when the substrate chuck 11 and the substrate S start to come into contact with each other.

[0100] 15A to 15C are diagrams for explaining the substrate holding process when the substrate S is transported onto the substrate chuck 11 by the supply hand 51. Fig. 15A to Fig. 15C show the substrate holding process of this embodiment in chronological order. The substrate mounting process can be controlled by the control unit 30.

[0101] 15(a) shows a state in which the substrate S held by the supply hand 51 is disposed above the substrate chuck 11. In this state, the substrate chuck 11 (holding surface 11a) and the substrate S are separated from each other. In this state (i.e., when the substrate S is supported by the supply hand 51), a first exhaust operation is started. Here, the supply hand 51 in this embodiment is configured to hold the lower surface of the substrate S by vacuum suction, but is not limited thereto, and may be configured to hold the upper surface of the substrate S by vacuum suction.

[0102] 15(b)-(c) show a state in which the gap between the substrate chuck 11 and the substrate S is narrowed by driving the supply hand 51 in the -Z direction. In this embodiment, the first exhaust operation is switched to the second exhaust operation in the state of FIG. 15(b), i.e., before (for example, immediately before) contact between the substrate chuck 11 (holding surface 11a) and the substrate S starts. This makes it possible to reduce distortion of the substrate S that occurs when the substrate chuck 11 holds the substrate S. Alternatively, the second exhaust operation may be switched to the third exhaust operation after contact between the substrate chuck 11 (holding surface 11a) and the substrate S starts.

[0103] Fig. 16 shows an example of the first and second exhaust operations in the substrate mounting process, in which the horizontal axis indicates the Z direction position of the supply hand 51 and the vertical axis indicates the exhaust pressure.

[0104] In the substrate mounting process of this embodiment, when the supply hand 51 starts to move in the -Z direction while holding the substrate S above the substrate chuck 11, a first exhaust operation is started. In the first exhaust operation, exhaust is performed with an exhaust pressure of a first set value so as to reduce the lateral slippage of the substrate S on the supply hand 51 caused by the wind pressure generated by the high-speed movement of the supply hand 51. The first set value is set to a value that can keep the lateral slippage (shift amount) of the substrate S on the supply hand 51 within an allowable range during the period from when the supply hand 51 starts to move in the -Z direction until the holding surface 11a of the substrate chuck 11 starts to contact the substrate S. This can reduce the lateral slippage of the substrate S on the supply hand 51.

[0105] The exhaust amount in the first exhaust operation (the flow rate of the gas exhausted through the exhaust hole 11b) is preferably equal to or greater than the flow rate of the gas pushed out from the space above the substrate chuck 11 by driving the supply hand 51 in the -Z direction (hereinafter, sometimes referred to as the gas extrusion amount). However, depending on the arrangement of the piping system in the apparatus, it may be difficult to make the exhaust amount in the first exhaust operation greater than the gas extrusion amount. In this case, the exhaust amount in the first exhaust operation may be set in consideration of the holding of the substrate S by the supply hand 51. For example, since the substrate S is vacuum-sucked by the supply hand 51, if the exhaust amount in the first exhaust operation is greater than or equal to the value obtained by subtracting the vacuum suction amount of the substrate S by the supply hand 51 from the gas extrusion amount, the lateral slippage of the substrate S on the supply hand 51 can be reduced.

[0106] Next, at the timing when the Z direction position of the supply hand 51 reaches the first position, the second exhaust operation is started. That is, at this timing, the first exhaust operation is switched to the second exhaust operation. In the second exhaust operation, exhaust is performed at an exhaust pressure of a second set value smaller than the first set value so that the distortion of the substrate S caused by the substrate chuck 11 holding the substrate S is reduced. The second set value is set to a value that can keep the amount of distortion of the substrate S caused by the substrate chuck 11 holding the substrate S within an allowable range. This makes it possible to reduce the distortion of the substrate S caused by the substrate chuck 11 holding the substrate S. In addition, by providing the second exhaust operation, the frictional force between the holding surface 11a of the substrate chuck 11 and the substrate S can be reduced, and wear of the substrate chuck 11 can also be reduced. Here, the first position is defined as the Z direction position of the supply hand 51 at the start of contact between the holding surface 11a of the substrate chuck 11 and the substrate S, or a position on the +Z direction side of that position. The first position is obtained in advance by an experiment, a simulation, or the like, and is stored in the control unit 30 (storage unit 32).

[0107] As described above, in the substrate mounting process of this embodiment, the first exhaust operation is switched to the second exhaust operation during the period from when the gap between the substrate chuck 11 and the substrate S starts to decrease due to the driving of the supply hand 51 to when the substrate chuck 11 starts to contact the substrate S. The first exhaust operation reduces the lateral slippage of the substrate S on the supply hand 51, so that the substrate mounting process can be performed without reducing the driving speed of the supply hand 51, which can be advantageous in terms of throughput. The second exhaust operation can reduce the distortion of the substrate S that occurs when the substrate S contacts the holding surface 11a of the substrate chuck 11. In addition, the first exhaust operation is switched to the second exhaust operation at the timing when the holding surface 11a and the substrate S start to contact each other or before the contact starts, which can be advantageous in terms of throughput. In other words, the substrate mounting process of this embodiment is advantageous in terms of the distortion of the substrate S and throughput in the substrate holding process.

[0108] <Embodiment of the article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a microstructure. The article manufacturing method according to the present embodiment includes a processing step of processing a substrate using the above-mentioned substrate processing apparatus and substrate processing method, and a manufacturing step of manufacturing an article from the substrate processed in the processing step. Furthermore, the article manufacturing method includes other well-known steps (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0109] <Summary of the embodiment> The disclosure of the present specification includes at least the following substrate holding device, substrate processing apparatus, substrate holding method, substrate processing method, and article manufacturing method. (Item 1) A substrate holding device for holding a substrate, A chuck for supporting the substrate; A pin protruding from the chuck; a control unit for controlling evacuation of a space between the substrate and the chuck, the control unit controls to perform a first exhaust operation of exhausting the space at a first exhaust pressure, and a second exhaust operation of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, The substrate holding device according to claim 1, wherein the second exhaust operation is performed during a period from when the protrusion amount of the pin starts to decrease until when the chuck comes into contact with the substrate. (Item 2) 2. The substrate holding device according to item 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed at a timing when contact between the chuck and the substrate starts or before contact starts. (Item 3) the first pumping operation is initiated in a state where there is a gap between the chuck and the substrate; 3. The substrate holding device according to item 1 or 2, wherein the first exhaust pressure is set to a value that can keep an amount of shift of the substrate on the pins within an allowable range. (Item 4) 4. The substrate holding device according to claim 1, wherein the second exhaust pressure is set to a value that can keep an amount of distortion of the substrate caused by the support of the substrate by the chuck within an allowable range. (Item 5) 5. The substrate holding device according to claim 1, wherein the control unit controls to further perform a third exhaust operation after the second exhaust operation, in which the space is evacuated with a third exhaust pressure higher than the second exhaust pressure. (Item 6) 6. The substrate holding device according to item 5, wherein the third exhaust pressure is equal to or lower than the first exhaust pressure. (Item 7) 8. The substrate holding device according to claim 5, wherein the third exhaust operation is started after contact between the chuck and the substrate is started. (Item 8) 8. The substrate holding device according to claim 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed while the amount of protrusion of the pins from the chuck is reduced. (Item 9) 8. The substrate holding device according to claim 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed in a state where the reduction in the amount of protrusion of the pins from the chuck is stopped. (Item 10) 10. The substrate holding device according to any one of items 1 to 9, characterized in that switching from the first exhaust operation to the second exhaust operation is performed according to an amount of protrusion of the pin from the chuck. (Item 11) Further comprising a sensor for detecting exhaust pressure, 10. The substrate holding device according to any one of items 1 to 9, wherein switching from the first exhaust operation to the second exhaust operation is performed in response to a detection result of the sensor. (Item 12) A flow rate sensor is further provided to detect the flow rate of the gas exhausted from the space, 10. The substrate holding device according to any one of items 1 to 9, wherein switching from the first exhaust operation to the second exhaust operation is performed in response to a detection result of the flow rate sensor. (Item 13) A substrate holding device for holding a substrate, A chuck for supporting the substrate; a control unit for controlling evacuation of a space between the substrate and the chuck, the control unit controls to perform a first exhaust operation of exhausting the space at a first exhaust pressure, and a second exhaust operation of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, a first exhaust operation being started when an outer periphery of the substrate placed on the chuck is not in contact with the chuck, and a second exhaust operation being performed before an entire area of ​​the substrate comes into contact with the chuck. (Item 14) A substrate processing apparatus for processing a substrate, A substrate holding device according to any one of items 1 to 13, a processing section for processing the substrate held by the substrate holding device; A substrate processing apparatus comprising: (Item 15) A method for holding a substrate, comprising the steps of: a first evacuation step of evacuating a space between the substrate and a chuck supporting the substrate with a first evacuation pressure; a second exhaust step of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust step, the second exhaust step is performed during a period from when the protrusion amount of the pin protruding from the chuck starts to decrease until when the chuck comes into contact with the substrate. A substrate holding method comprising: (Item 16) Item 16. The substrate holding method according to item 15, wherein the first evacuation step is performed while the substrate is supported by a transport hand. (Item 17) A substrate processing method for processing a substrate, comprising the steps of: A holding step of holding the substrate on a chuck using the substrate holding method according to item 15 or 16; a processing step of processing the substrate held by the chuck in the holding step; A substrate processing method comprising: (Item 18) Processing a substrate using the substrate processing method according to claim 17; producing an article from the processed substrate; A method for manufacturing an article, comprising:

[0110] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0111] 10: substrate holder, 11: substrate chuck, 11a: holder surface, 11b: exhaust hole, 12a: fine movement stage, 12b: coarse movement stage, 13: pin, 20: processing section, 30: control section, 100: exposure apparatus (substrate processing apparatus)

Claims

1. A substrate holding device for holding a substrate, A chuck for supporting the substrate; A pin protruding from the chuck; a control unit for controlling evacuation of a space between the substrate and the chuck, the control unit controls to perform a first exhaust operation of exhausting the space at a first exhaust pressure, and a second exhaust operation of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, the second exhaust operation is performed during a period from when the protrusion of the pins starts to decrease until when the chuck comes into contact with the substrate.

2. 2. The substrate holding device according to claim 1, wherein the first exhaust operation is switched to the second exhaust operation at a timing when or before contact between the chuck and the substrate starts.

3. the first pumping operation is initiated in a state where there is a gap between the chuck and the substrate; 2. The substrate holding device according to claim 1, wherein the first exhaust pressure is set to a value that allows an amount of shift of the substrate on the pins to fall within an allowable range.

4. 2. The substrate holding device according to claim 1, wherein the second exhaust pressure is set to a value that allows an amount of distortion of the substrate caused by the support of the substrate by the chuck to fall within an allowable range.

5. 2. The substrate holding device according to claim 1, wherein the control unit controls to further perform a third exhaust operation after the second exhaust operation, in which the space is evacuated at a third exhaust pressure greater than the second exhaust pressure.

6. 6. The substrate holding device according to claim 5, wherein the third exhaust pressure is equal to or lower than the first exhaust pressure.

7. 6. The substrate holding device of claim 5, wherein the third pumping operation is initiated after contact between the chuck and the substrate is initiated.

8. 2. The substrate holding device according to claim 1, wherein the first exhaust operation is switched to the second exhaust operation while a protrusion amount of the pin from the chuck is being reduced.

9. 2. The substrate holding device according to claim 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed in a state where a reduction in the amount of protrusion of the pins from the chuck is stopped.

10. 2. The substrate holding device according to claim 1, wherein the first exhaust operation is switched to the second exhaust operation in response to an amount of protrusion of the pin from the chuck.

11. Further comprising a sensor for detecting exhaust pressure, 2. The substrate holding device according to claim 1, wherein the first exhaust operation is switched to the second exhaust operation in response to a detection result of the sensor.

12. A flow rate sensor is further provided to detect the flow rate of the gas exhausted from the space, 2. The substrate holding device according to claim 1, wherein the first exhaust operation is switched to the second exhaust operation in response to a detection result of the flow rate sensor.

13. A substrate holding device for holding a substrate, A chuck for supporting the substrate; a control unit for controlling evacuation of a space between the substrate and the chuck, the control unit controls to perform a first exhaust operation of exhausting the space at a first exhaust pressure, and a second exhaust operation of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, A substrate holding device, characterized in that the first exhaust operation is started when an outer periphery of the substrate placed on the chuck is not in contact with the chuck, and the second exhaust operation is performed before the entire area of ​​the substrate comes into contact with the chuck.

14. A substrate processing apparatus for processing a substrate, A substrate holding device according to any one of claims 1 to 13, a processing section for processing the substrate held by the substrate holding device; A substrate processing apparatus comprising:

15. A method for holding a substrate, comprising the steps of: a first evacuation step of evacuating a space between the substrate and a chuck supporting the substrate with a first evacuation pressure; a second exhaust step of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust step, the second exhaust step is performed during a period from when the protrusion amount of the pin protruding from the chuck starts to decrease until the chuck comes into contact with the substrate. A substrate holding method comprising:

16. 16. The substrate holding method according to claim 15, wherein the first exhaust step is performed while the substrate is supported by a transfer hand.

17. A substrate processing method for processing a substrate, comprising the steps of: a holding step of holding the substrate on a chuck using the substrate holding method according to claim 15; a processing step of processing the substrate held by the chuck in the holding step; A substrate processing method comprising:

18. Processing a substrate using the substrate processing method according to claim 17; producing an article from the processed substrate; A method for manufacturing an article, comprising:

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