Temperature Control System

Abstract

A temperature control system is provided that can reduce the amount of use of a first heat medium for cooling and a third heat medium that exchanges heat with a second heat medium for heating, compared to the conventional system. [Solution] The temperature control system 1 includes a first circulation circuit 11 through which a first heat medium circulates, a second circulation circuit 12 through which a second heat medium circulates, a third circulation circuit 13 through which a third heat medium circulates, a cooling device 7 that cools the first heat medium flowing through the first circulation circuit 11, a heating device 8 that heats the second heat medium flowing through the second circulation circuit 12, a first heat exchanger 21 that performs heat exchange between the first heat medium and the third heat medium, and a second heat exchanger 22 that performs heat exchange between the second heat medium and the third heat medium. The first heat exchanger 21 and the second heat exchanger 22 are connected in series by the third circulation circuit 13.

Description

[Technical field]

[0001] The present invention relates to a temperature control system for controlling the temperature of a heat medium used in semiconductor manufacturing equipment such as an etching equipment, a CVD equipment, and a PVD equipment. [Background technology]

[0002] Semiconductor manufacturing equipment (e.g., etching equipment, CVD equipment, PVD equipment) for manufacturing semiconductor devices is configured to execute manufacturing processes while controlling the processing temperature. For example, in an etching equipment, the processing temperature of the wafer is adjusted by flowing a temperature-adjusted liquid as a heat medium through a flow passage formed in a susceptor that supports the wafer.

[0003] The heat transfer medium supplied to the semiconductor manufacturing equipment is cooled and heated in advance by a cooling device and a heating device. The cooled heat transfer medium and the heated heat transfer medium are mixed to generate a temperature-adjusted heat transfer medium. The temperature-adjusted heat transfer medium passes through the semiconductor manufacturing equipment to adjust the processing temperature of the wafers in the semiconductor manufacturing equipment.

[0004] However, since a heat medium of a required temperature is produced by mixing a cooled heat medium and a heated heat medium, the following problems arise. 1.The same heat medium must be used for the heat medium cooled by the cooling device, the heat medium heated by the heating device, and the heat medium supplied to the semiconductor manufacturing equipment, so there is a large amount of heat medium that can be used stably from low to high temperature ranges. Such heat mediums with a wide usable temperature range are very expensive. 2. The balance between the amount of heat transfer medium on the cooling side and the amount of heat transfer medium on the heating side will be disrupted, making it necessary to adjust the amount of heat transfer medium between the cooling system and the heating system.

[0005] In order to solve such problems, a temperature control system has been proposed, as shown in FIG. 11, which includes a first circulation circuit 301 through which a first heat medium for cooling circulates, a second circulation circuit 302 through which a second heat medium for heating circulates, a third circulation circuit 303 through which a third heat medium supplied to the semiconductor manufacturing equipment 200 circulates, a first heat exchanger 305 that exchanges heat between the first heat medium and the third heat medium, and a second heat exchanger 306 that exchanges heat between the second heat medium and the third heat medium.

[0006] The temperature control system includes a cooling device 307 for cooling the first heat medium flowing through the first circulation circuit 301, a heating device 308 for heating the second heat medium flowing through the second circulation circuit 302, a first buffer tank 311 for holding the first heat medium, and a second buffer tank 312 for holding the second heat medium. The third circulation circuit 303 is connected to the semiconductor manufacturing equipment 200, and the third heat medium circulates through the third circulation circuit 303 and the semiconductor manufacturing equipment 200. The processing temperature in the semiconductor manufacturing equipment 200 is adjusted by the third heat medium. The temperature of the third heat medium is adjusted by the first heat medium and the second heat medium in the first heat exchanger 305 and the second heat exchanger 306.

[0007] According to this temperature control system, the first circulation circuit 301, the second circulation circuit 302, and the third circulation circuit 303 can be independent closed circuits by providing the first heat exchanger 305 and the second heat exchanger 306. Therefore, a heat medium different from the first heat medium and the second heat medium can be used as the third heat medium having a wide usable temperature range, and as a result, the amount of the third heat medium used can be reduced. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Patent Publication No. 2021-77086 Summary of the Invention [Problem to be solved by the invention]

[0009] However, in the temperature control system shown in FIG. 11, the first heat exchanger 305, which performs heat exchange between the first heat medium and the third heat medium, and the second heat exchanger 306, which performs heat exchange between the second heat medium and the third heat medium, are arranged in parallel. Therefore, the third circulation circuit 303 required to connect these two heat exchangers 305 and 306 becomes long, and as a result, there is a limit to reducing the amount of the third heat medium circulating in the third circulation circuit 303. In addition, since the third circulation circuit 303 is insulated, the required installation space is large compared to the diameter of the piping. Furthermore, in the parallel arrangement, check valves 314 and 315 are required to prevent the third heat medium that has passed through the first heat exchanger 305 and the second heat exchanger 306 from flowing back. As a result, there is a problem that the cost of the temperature control system increases.

[0010] Therefore, the present invention provides a temperature control system that can reduce the amount of use of the first heat medium for cooling and the third heat medium that exchanges heat with the second heat medium for heating, compared to the conventional system. [Means for solving the problem]

[0011] In one embodiment, there is provided a temperature control system for adjusting a temperature of a semiconductor manufacturing apparatus, the temperature control system comprising: a first circulation circuit through which a first heat medium circulates; a second circulation circuit independent of the first circulation circuit and through which a second heat medium circulates; a third circulation circuit independent of the first circulation circuit and the second circulation circuit and through which a third heat medium circulates; a cooling device that cools the first heat medium flowing through the first circulation circuit; a heating device that heats the second heat medium flowing through the second circulation circuit; a first heat exchanger that performs heat exchange between the first heat medium cooled by the cooling device and the third heat medium; a second heat exchanger that performs heat exchange between the second heat medium heated by the heating device and the third heat medium; a first bypass line connected to the third circulation circuit and bypassing the first heat exchanger; and a second bypass line connected to the third circulation circuit and bypassing the second heat exchanger, the first heat exchanger and the second heat exchanger being connected in series by the third circulation circuit.

[0012] Since the first heat exchanger and the second heat exchanger are connected in series by the third circulation circuit, the length of the third circulation circuit can be shortened. The third heat medium has a wide usable temperature range and is chemically inactive. The third heat medium having such properties is usually more expensive than the first heat medium and the second heat medium. According to the present invention, the third circulation circuit can be shortened, so that the amount of the third heat medium used can be reduced. These heat transfer medium circuits are insulated, and therefore require a large installation space compared to the diameter of the piping. However, according to the present invention, the third circulation circuit can be shortened, thereby reducing the space occupied by the third circulation circuit and the installation space required for the temperature control system.

[0013] In one embodiment, the temperature control system further includes a first heat storage unit having a first heat storage material that stores thermal energy of the first heat medium, the first heat storage unit being connected to the first circulation circuit and being arranged downstream of the first heat exchanger in the flow direction of the first heat medium.

[0014] The first heat storage unit can cool the first heat medium using the stored thermal energy, so the heat load of the cooling device can be leveled out. If a sudden temperature change occurs in the first heat medium (a temporary temperature increase accompanying an increase in the temperature of the third heat medium supplied to the first heat exchanger), the temperature change can be mitigated. A temporary increase in the heat load of the cooling device occurs when the process of the semiconductor manufacturing device is switched, but since the first heat medium exchanges heat with the first heat storage unit, a sudden increase in temperature of the first heat medium entering the cooling device can be suppressed, and the temporary increase in the heat load of the cooling device can be mitigated.

[0015] In one embodiment, the first heat storage unit is connected to the first circulation circuit and the third circulation circuit, the first heat storage unit is arranged downstream of the first heat exchanger in the flow direction of the first heat medium and upstream of the first heat exchanger in the flow direction of the third heat medium, and the first heat storage unit is configured to perform heat exchange between the third heat medium before being sent to the first heat exchanger and the first heat storage material.

[0016] The first heat storage unit can use the stored thermal energy to cool the third heat medium before it is sent to the first heat exchanger. Since the third heat medium is cooled by the first heat storage unit and the first heat exchanger, the responsiveness of the temperature adjustment of the semiconductor manufacturing equipment can be improved.

[0017] In one embodiment, the temperature control system further includes a second heat storage unit having a second heat storage material that stores the thermal energy of the second heat medium, the second heat storage unit being connected to the second circulation circuit and being arranged downstream of the second heat exchanger in the flow direction of the second heat medium.

[0018] The second heat storage unit can heat the second heat medium using the stored thermal energy, so the heat load of the heating device can be leveled out. If a sudden temperature change occurs in the second heat medium (a temporary temperature drop accompanying a drop in the temperature of the third heat medium supplied to the second heat exchanger), the temperature change can be mitigated. A temporary increase in the heat load of the heating device occurs when the semiconductor manufacturing device switches processes, but since the second heat medium exchanges heat with the second heat storage unit, a sudden drop in temperature of the second heat medium entering the heating device can be suppressed, and the temporary increase in the heat load of the heating device can be mitigated.

[0019] In one embodiment, the second heat storage unit is connected to the second circulation circuit and the third circulation circuit, the second heat storage unit is arranged downstream of the second heat exchanger in the flow direction of the second heat medium and upstream of the second heat exchanger in the flow direction of the third heat medium, and the second heat storage unit is configured to perform heat exchange between the third heat medium before being sent to the second heat exchanger and the second heat storage material.

[0020] The second heat storage unit can use the stored thermal energy to heat the third heat medium before it is sent to the second heat exchanger. Since the third heat medium is heated by the second heat storage unit and the second heat exchanger, the responsiveness of the temperature adjustment of the semiconductor manufacturing equipment can be improved.

[0021] In one embodiment, the first heat exchanger and the second heat exchanger are a plurality of first heat exchangers and a plurality of second heat exchangers, the plurality of first heat exchangers are connected in parallel by the first circulation circuit, the plurality of second heat exchangers are connected in parallel by the second circulation circuit, the third circulation circuit is a plurality of third circulation circuits, the plurality of first heat exchangers and the plurality of second heat exchangers constitute a plurality of sets of first heat exchangers and second heat exchangers, the plurality of sets of first heat exchangers and second heat exchangers are respectively connected to the plurality of third circulation circuits, the first bypass lines are a plurality of first bypass lines bypassing the plurality of first heat exchangers, and the second bypass lines are a plurality of second bypass lines bypassing the plurality of second heat exchangers.

[0022] By supplying the first heat medium and the second heat medium to a plurality of first heat exchangers and a plurality of second heat exchangers, the number of components such as a cooling device, a heating device, and a pump can be reduced. Effect of the Invention

[0023] Since the first heat exchanger and the second heat exchanger are connected in series by the third circulation circuit, the length of the third circulation circuit can be shortened. The third heat medium has a wide usable temperature range and is chemically inactive. The third heat medium having such properties is usually more expensive than the first heat medium and the second heat medium. According to the present invention, the third circulation circuit can be shortened, so that the amount of the third heat medium used can be reduced. [Brief description of the drawings]

[0024] [Figure 1] FIG. 1 is a schematic diagram illustrating an embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing device. [Diagram 2] FIG. 11 is a schematic diagram showing another embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing apparatus. [Diagram 3] FIG. 13 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing apparatus. [Figure 4] FIG. 13 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing apparatus. [Diagram 5] FIG. 13 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing apparatus. [Figure 6] FIG. 13 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing apparatus. [Figure 7] FIG. 13 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing apparatus. [Figure 8] FIG. 13 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing apparatus. [Figure 9] FIG. 13 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system and a semiconductor manufacturing apparatus. [Figure 10] FIG. 1 is a schematic diagram illustrating an embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing tools. [Figure 11] FIG. 1 is a schematic diagram showing a conventional temperature control system. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a schematic diagram showing one embodiment of a semiconductor manufacturing system including a temperature control system 1 and a semiconductor manufacturing apparatus 2. The temperature control system 1 is configured to supply a heat medium to the semiconductor manufacturing apparatus 2 (e.g., an etching apparatus, a CVD apparatus, a PVD apparatus, etc.) to adjust the temperature of the semiconductor manufacturing apparatus 2.

[0026] The temperature control system 1 is configured to use a first heat medium, a second heat medium, and a third heat medium to control the temperature of the heat medium used in the semiconductor manufacturing equipment 2. The temperature control system 1 includes a first circulation circuit 11 through which the first heat medium circulates, a second circulation circuit 12 through which the second heat medium circulates, a third circulation circuit 13 through which the third heat medium circulates, a cooling device 7 that cools the first heat medium flowing in the first circulation circuit 11, and a heating device 8 that heats the second heat medium flowing in the second circulation circuit 12.

[0027] The cooling device 7 is connected to the first circulation circuit 11. The heating device 8 is connected to the second circulation circuit 12. The temperature control system 1 includes a first pump 14 connected to the first circulation circuit 11, and the first heat medium is circulated through the first circulation circuit 11 by the first pump 14. The temperature control system 1 includes a second pump 15 connected to the second circulation circuit 12, and the second pump 15 is circulated through the second circulation circuit 12.

[0028] The third circulation circuit 13 is connected to the semiconductor manufacturing equipment 2, and the third heat medium circulates through the third circulation circuit 13 and the semiconductor manufacturing equipment 2. The processing temperature in the semiconductor manufacturing equipment 2 is regulated by the third heat medium. The temperature of the third heat medium is regulated by the first heat medium and the second heat medium, as described below.

[0029] The second circulation circuit 12 is independent from the first circulation circuit 11, and the third circulation circuit 13 is independent from the first circulation circuit 11 and the second circulation circuit 12. In other words, the first circulation circuit 11, the second circulation circuit 12, and the third circulation circuit 13 form closed circuits independent of each other, and the first heat medium, the second heat medium, and the third heat medium are not mixed.

[0030] Different heat media can be used for the first heat medium, the second heat medium, and the third heat medium. For example, common brine is used as the first heat medium for cooling. Examples of brine include ethylene glycol, propylene glycol, calcium chloride, etc. Examples of the second heat medium for heating include silicone oil, etc. Examples of the third heat medium include a fluorine-based inert liquid. The third heat medium is an insulator that is chemically stable from low to high temperatures in order to directly adjust the processing temperature in the semiconductor manufacturing equipment 2.

[0031] The lower limit usable temperature of the third heat medium is lower than the lower limit usable temperature of the first heat medium and the second heat medium. The upper limit usable temperature of the third heat medium is higher than the upper limit usable temperature of the first heat medium and the second heat medium. In other words, the usable temperature range of the third heat medium is wider than the usable temperature range of the first heat medium and the second heat medium. The usable temperature is the temperature at which the viscosity (fluidity) of the heat medium can be maintained and the heat medium does not change phase (does not boil and does not solidify).

[0032] The temperature control system 1 includes a first buffer tank 16 that holds a first heat medium and a second buffer tank 17 that holds a second heat medium. The first buffer tank 16 is connected to the first circulation circuit 11, and the second buffer tank 17 is connected to the second circulation circuit 12. In one embodiment, the first buffer tank 16 and the second buffer tank 17 may not be provided.

[0033] The temperature control system 1 further includes a first heat exchanger 21 that performs heat exchange between the first heat medium cooled by the cooling device 7 and the third heat medium, and a second heat exchanger 22 that performs heat exchange between the second heat medium heated by the heating device 8 and the third heat medium. The first heat exchanger 21 is connected to the first circulation circuit 11 and the third circulation circuit 13. The first heat medium flowing through the first circulation circuit 11 and the third heat medium flowing through the third circulation circuit 13 perform heat exchange in the first heat exchanger 21. The second heat exchanger 22 is connected to the second circulation circuit 12 and the third circulation circuit 13. The second heat medium flowing through the second circulation circuit 12 and the third heat medium flowing through the third circulation circuit 13 perform heat exchange in the second heat exchanger 22.

[0034] The first heat exchanger 21 and the second heat exchanger 22 are connected in series by the third circulation circuit 13. In this embodiment, the first heat exchanger 21 is disposed downstream of the second heat exchanger 22 in the flow direction of the third heat medium. In one embodiment, the first heat exchanger 21 may be disposed upstream of the second heat exchanger 22 in the flow direction of the third heat medium. Since the first heat exchanger 21 and the second heat exchanger 22 are connected in series, the length of the third circulation circuit 13 can be shortened. The third heat medium has a wide usable temperature range and is chemically inactive. The third heat medium having such properties is usually more expensive than the first heat medium and the second heat medium. According to this embodiment, the third circulation circuit 13 can be shortened, so that the amount of the third heat medium used can be reduced.

[0035] According to this embodiment, the third circulation circuit 13 can be shortened, so that the space occupied by the third circulation circuit 13 can be reduced, and the installation space required for the temperature control system 1 can be reduced. Furthermore, a check valve, which is required in the case of a parallel arrangement, can also be eliminated.

[0036] The first heat medium circulating in the first circulation circuit 11 is cooled to a predetermined target cooling temperature by the cooling device 7. Examples of the cooling device 7 include a vapor compression refrigerator, an absorption refrigerator, etc. Examples of the vapor compression refrigerator include a turbo refrigerator, a screw refrigerator, a rotary refrigerator, a scroll refrigerator, etc., and these can be used. The configuration of the cooling device 7 is not particularly limited as long as it can cool the first heat medium.

[0037] The second heat medium circulating in the second circulation circuit 12 is heated to a predetermined target heating temperature by the heating device 8. An example of the heating device 8 is an electric heater. The configuration of the heating device 8 is not particularly limited as long as it can heat the second heat medium.

[0038] The first heat exchanger 21 is configured to effect heat exchange between the first heat medium cooled by the cooling device 7 and the third heat medium before being sent to the semiconductor manufacturing apparatus 2. The second heat exchanger 22 is configured to effect heat exchange between the second heat medium heated by the heating device 8 and the third heat medium before being sent to the semiconductor manufacturing apparatus 2. The third heat medium is cooled by the first heat medium and heated by the second heat medium. In the embodiment shown in FIG. 1, since the second heat exchanger 22 is disposed upstream of the first heat exchanger 21, the third heat medium is first heated by the second heat medium in the second heat exchanger 22 and then cooled by the first heat medium in the first heat exchanger 21.

[0039] The temperature of the third heat medium that returns to the temperature control system 1 after passing through the semiconductor manufacturing apparatus 2 varies depending on the processing step in the semiconductor manufacturing apparatus 2. Therefore, in order to adjust the third heat medium to an appropriate temperature according to the processing step in the semiconductor manufacturing apparatus 2, the flow rate of the third heat medium passing through the first heat exchanger 21 and the second heat exchanger 22 is changed as follows.

[0040] The temperature control system 1 includes a first bypass line 31 connected to the third circulation circuit 13 and bypassing the first heat exchanger 21, a first control valve 34 connected to the first bypass line 31 and the third circulation circuit 13, a second bypass line 32 connected to the third circulation circuit 13 and bypassing the second heat exchanger 22, a second control valve 35 connected to the second bypass line 32 and the third circulation circuit 13, and an operation control unit 38 that controls the operation of the first control valve 34 and the second control valve 35.

[0041] The first control valve 34 is configured to control the flow rate of the third heat medium flowing through the first heat exchanger 21 and the first bypass line 31. The flow rate of the third heat medium is controlled within a range of 0 to 100% by the first control valve 34. For example, when the flow rate of the third heat medium flowing through the first heat exchanger 21 is set to 0% and the flow rate of the third heat medium flowing through the first bypass line 31 is set to 100% by the first control valve 34, the third heat medium flows through the first bypass line 31 but does not flow through the first heat exchanger 21. In this case, the third heat medium is not cooled by the first heat medium. In another example, when the flow rate of the third heat medium flowing through the first heat exchanger 21 is set to 50% and the flow rate of the third heat medium flowing through the first bypass line 31 is set to 50% by the first control valve 34, the third heat medium flows through both the first bypass line 31 and the first heat exchanger 21. In yet another example, when the first control valve 34 sets the flow rate of the third heat medium flowing through the first heat exchanger 21 to 100% and the flow rate of the third heat medium flowing through the first bypass line 31 to 0%, the third heat medium flows through the first heat exchanger 21 but does not flow through the first bypass line 31.

[0042] In this way, the first bypass line 31 and the first control valve 34 control the flow rate of the third heat medium flowing through the first heat exchanger 21, thereby adjusting the temperature of the third heat medium sent to the semiconductor manufacturing equipment 2. In one example, when the target value of the processing temperature in the semiconductor manufacturing equipment 2 is higher than the temperature of the third heat medium returned from the semiconductor manufacturing equipment 2, the first control valve 34 sets the flow rate of the third heat medium flowing through the first heat exchanger 21 to 0% and the flow rate of the third heat medium flowing through the first bypass line 31 to 100%.

[0043] In this embodiment, the first control valve 34 is a three-way valve. However, as long as the first control valve 34 can control the flow rate of the third heat medium flowing through the first heat exchanger 21 and the first bypass line 31, the configuration of the first control valve 34 is not limited to a three-way valve. For example, the first control valve 34 may be a combination of two-way valves.

[0044] The second control valve 35 is configured to control the flow rate of the third heat medium flowing through the second heat exchanger 22 and the second bypass line 32. The flow rate of the third heat medium is controlled by the second control valve 35 within a range of 0 to 100%. For example, when the flow rate of the third heat medium flowing through the second heat exchanger 22 is set to 0% and the flow rate of the third heat medium flowing through the second bypass line 32 is set to 100% by the second control valve 35, the third heat medium flows through the second bypass line 32 but does not flow through the second heat exchanger 22. In this case, the third heat medium is not heated by the second heat medium. In another example, when the flow rate of the third heat medium flowing through the second heat exchanger 22 is set to 50% and the flow rate of the third heat medium flowing through the second bypass line 32 is set to 50% by the second control valve 35, the third heat medium flows through both the second bypass line 32 and the second heat exchanger 22. In yet another example, when the second control valve 35 sets the flow rate of the third heat medium flowing through the second heat exchanger 22 to 100% and the flow rate of the third heat medium flowing through the second bypass line 32 to 0%, the third heat medium flows through the second heat exchanger 22 but does not flow through the second bypass line 32.

[0045] In this way, the second bypass line 32 and the second control valve 35 control the flow rate of the third heat medium flowing through the second heat exchanger 22, thereby adjusting the temperature of the third heat medium sent to the semiconductor manufacturing equipment 2. In one example, when the target value of the processing temperature in the semiconductor manufacturing equipment 2 is lower than the temperature of the third heat medium returned from the semiconductor manufacturing equipment 2, the second control valve 35 sets the flow rate of the third heat medium flowing through the second heat exchanger 22 to 0% and the flow rate of the third heat medium flowing through the second bypass line 32 to 100%.

[0046] In this embodiment, the second control valve 35 is a three-way valve. However, as long as the second control valve 35 can control the flow rate of the third heat medium flowing through the second heat exchanger 22 and the second bypass line 32, the configuration of the second control valve 35 is not limited to a three-way valve. For example, the second control valve 35 may be a combination of two-way valves.

[0047] The operation control unit 38 includes at least one computer. The operation control unit 38 includes a storage device 38a in which programs and the like are stored, and a calculation device 38b that executes calculations according to instructions included in the programs. The storage device 38a includes a main storage device such as a random access memory (RAM), and an auxiliary storage device such as a hard disk drive (HDD) or a solid state drive (SSD). Examples of the calculation device 38b include a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). However, the specific configuration of the operation control unit 38 is not limited to these examples.

[0048] 2 is a schematic diagram showing another embodiment of a semiconductor manufacturing system including a temperature control system 1 and a semiconductor manufacturing apparatus 2. The configuration and operation of this embodiment that are not particularly described are the same as those of the embodiment described above with reference to FIG. 1, so that the overlapping description will be omitted. As shown in FIG. 2, the temperature control system 1 of this embodiment further includes a first heat storage unit 41 having a first heat storage material 44 that stores the thermal energy of the first heat medium. The first heat storage unit 41 is connected to the first circulation circuit 11, and is disposed downstream of the first heat exchanger 21 in the flow direction of the first heat medium.

[0049] When the thermal load on the cooling device 7 is low, that is, when the target value of the processing temperature in the semiconductor manufacturing equipment 2 is high, the first thermal storage unit 41 stores the thermal energy of the first heat medium. When the thermal load on the cooling device 7 is high, that is, when the target value of the processing temperature in the semiconductor manufacturing equipment 2 is low, the first thermal storage unit 41 provides the stored thermal energy to the first heat medium. In this way, the first thermal storage unit 41 can cool the first heat medium using the stored thermal energy, so that the thermal load of the cooling device 7 can be leveled. Furthermore, by providing the first thermal storage unit 41, the capacity of the first buffer tank 16 for the first heat medium can be reduced.

[0050] In one embodiment, the first heat storage material 44 of the first heat storage unit 41 is made of a medium that changes from a liquid phase to a solid phase near the target cooling temperature in the cooling device 7. The first heat storage material 44 having such properties can store the latent heat associated with the phase change as thermal energy. In another embodiment, the first heat storage material 44 may be made of a solid or liquid that does not change phase.

[0051] 3 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system 1 and a semiconductor manufacturing apparatus 2. The configuration and operation of this embodiment not specifically described are the same as those of the embodiment described above with reference to FIG. 2, and therefore repeated description will be omitted.

[0052] 3, the first heat storage unit 41 is connected to the first circulation circuit 11 and the third circulation circuit 13. The first heat storage unit 41 is disposed downstream of the first heat exchanger 21 in the flow direction of the first heat medium, and disposed upstream of the first heat exchanger 21 in the flow direction of the third heat medium. The first heat storage unit 41 is configured to perform heat exchange between the third heat medium before being sent to the first heat exchanger 21 and the first heat storage material 44.

[0053] The first heat storage unit 41 can use the stored thermal energy to cool the third heat medium before it is sent to the first heat exchanger 21. Since the third heat medium is cooled by the first heat storage unit 41 and the first heat exchanger 21, the responsiveness of the temperature adjustment of the semiconductor manufacturing equipment 2 can be improved.

[0054] 4 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system 1 and a semiconductor manufacturing apparatus 2. The configuration and operation of this embodiment that are not particularly described are the same as those of the embodiment described above with reference to FIG. 2, so that the overlapping description will be omitted. As shown in FIG. 4, the temperature control system 1 of this embodiment further includes a second heat storage unit 42 having a second heat storage material 45 that stores the thermal energy of the second heat medium. The second heat storage unit 42 is connected to the second circulation circuit 12 and is disposed downstream of the second heat exchanger 22 in the flow direction of the second heat medium.

[0055] When the thermal load on the heating device 8 is low, i.e., when the target value of the processing temperature in the semiconductor manufacturing equipment 2 is low, the second thermal storage unit 42 stores the thermal energy of the second thermal medium. When the thermal load on the heating device 8 is high, i.e., when the target value of the processing temperature in the semiconductor manufacturing equipment 2 is high, the second thermal storage unit 42 provides the stored thermal energy to the second thermal medium. In this way, the second thermal storage unit 42 can heat the second thermal medium using the stored thermal energy, so that the thermal load on the heating device 8 can be leveled. Furthermore, by providing the second thermal storage unit 42, the capacity of the second buffer tank 17 for the second thermal medium can be reduced.

[0056] In one embodiment, the second heat storage material 45 of the second heat storage section 42 is composed of a medium that changes from a solid phase to a liquid phase at a target heating temperature in the heating device 8. The second heat storage material 45 having such properties can store the latent heat associated with the change in liquid phase as thermal energy. In another embodiment, the second heat storage material 45 may be composed of a solid or liquid that does not change phase.

[0057] In one embodiment, as shown in FIG. 5, both a first heat storage section 41 and a second heat storage section 42 may be provided.

[0058] 6 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system 1 and a semiconductor manufacturing apparatus 2. The configuration and operation of this embodiment not specifically described are the same as those of the embodiment described above with reference to FIG.

[0059] 6, the second heat storage unit 42 is connected to the second circulation circuit 12 and the third circulation circuit 13. The second heat storage unit 42 is disposed downstream of the second heat exchanger 22 in the flow direction of the second heat medium, and disposed upstream of the second heat exchanger 22 in the flow direction of the third heat medium. The second heat storage unit 42 is configured to perform heat exchange between the third heat medium before being sent to the second heat exchanger 22 and the second heat storage material 45.

[0060] The second heat storage unit 42 can use the stored thermal energy to heat the third heat medium before it is sent to the second heat exchanger 22. Since the third heat medium is heated by the second heat storage unit 42 and the second heat exchanger 22, the responsiveness of the temperature adjustment of the semiconductor manufacturing equipment 2 can be improved.

[0061] In one embodiment, as shown in FIG. 7, both a first heat storage section 41 and a second heat storage section 42 may be provided.

[0062] 8 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system 1 and a semiconductor manufacturing apparatus 2. The configuration and operation of this embodiment not specifically described are the same as those of the embodiment described above with reference to FIG. 1, and therefore the overlapping description will be omitted. In this embodiment, the cooling device that cools the first heat medium and the first heat exchanger that exchanges heat between the first heat medium and the third heat medium are integrally configured. More specifically, the cooling device and the first heat exchanger configure one refrigeration cycle.

[0063] As shown in FIG. 8, the first circulation circuit 11 is connected to a compressor 51, a condenser 52 as a cooling device, and an evaporator 53 as a first heat exchanger. The first heat medium circulates through the compressor 51, the condenser 52, and the evaporator 53. The refrigerant vapor of the first heat medium is compressed by the compressor 51. The compressed refrigerant vapor is sent to the condenser 52 as a cooling device through the first circulation circuit 11, and is condensed by the condenser 52 to become a refrigerant liquid. The refrigerant liquid is sent to the evaporator 53 as a first heat exchanger through the first circulation circuit 11, and is evaporated by removing heat from the third heat medium to become a refrigerant vapor. The refrigerant vapor is sent to the compressor 51 through the first circulation circuit 11, and is compressed by the compressor 51.

[0064] In this way, the first heat medium can cool the third heat medium while circulating through the compressor 51, the condenser 52, and the evaporator 53 that configure the refrigeration cycle. In this embodiment, the first buffer tank 16 and the first pump 14 are not provided. According to this embodiment, the configuration on the cooling side can be simplified.

[0065] In the embodiment shown in Figures 1 to 8, the first heat exchanger 21 and the second heat exchanger 22 are connected in series by the third circulation circuit 13, and the first heat exchanger 21 is arranged downstream of the second heat exchanger 22 in the flow direction of the third heat medium. In one embodiment, as shown in Figure 9, the first heat exchanger 21 may be arranged upstream of the second heat exchanger 22 in the flow direction of the third heat medium. The configuration shown in Figure 9 is applicable to the embodiments described with reference to Figures 1 to 8.

[0066] Fig. 10 is a schematic diagram showing another embodiment of a semiconductor manufacturing system including a temperature control system 1 and a plurality of semiconductor manufacturing apparatuses 2. The temperature control system 1 is the temperature control system 1 of the embodiment described with reference to Fig. 1, and a duplicated description will be omitted. In one embodiment, the temperature control system 1 may be the temperature control system 1 of any of the embodiments described with reference to Figs. 2 to 9.

[0067] As shown in Fig. 10, the temperature control system 1 has a plurality of first heat exchangers 21, a plurality of second heat exchangers 22, and a plurality of third circulation circuits 13. The plurality of first heat exchangers 21 are connected in parallel by the first circulation circuit 11, and the plurality of second heat exchangers 22 are connected in parallel by the second circulation circuit 12. The plurality of first heat exchangers 21 and the plurality of second heat exchangers 22 constitute a plurality of groups G1, G2, G3 of first heat exchangers 21 and second heat exchangers 22. The plurality of groups G1, G2, G3 of first heat exchangers 21 and second heat exchangers 22 are connected to a plurality of third circulation circuits 13, respectively.

[0068] The first heat exchanger 21 and the second heat exchanger 22 of the multiple groups G1, G2, G3 are connected to the multiple semiconductor manufacturing apparatuses 2 by the multiple third circulation circuits 13. The first heat exchanger 21 and the second heat exchanger 22 of each group are arranged in series by the respective third circulation circuits 13. In this embodiment, the first heat exchanger 21 is disposed downstream of the second heat exchanger 22 in the flow direction of the third heat medium. In one embodiment, the first heat exchanger 21 may be disposed upstream of the second heat exchanger 22 in the flow direction of the third heat medium.

[0069] The temperature control system 1 includes a plurality of first bypass lines 31 that bypass a plurality of first heat exchangers 21, a plurality of second bypass lines 32 that bypass a plurality of second heat exchangers 22, a plurality of first control valves 34 connected to the plurality of first bypass lines 31 and a plurality of third circulation circuits 13, a second control valve 35 connected to the plurality of second bypass lines 32, and an operation control unit 38 that controls the operation of the plurality of first control valves 34 and the plurality of second control valves 35.

[0070] The processing temperatures in the multiple semiconductor manufacturing equipments 2 are independently controlled by a third heat medium whose temperature is adjusted by a first heat exchanger 21 and a second heat exchanger 22 in multiple groups G1, G2, and G3.

[0071] The above-described embodiments have been described for the purpose of enabling a person having ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments are naturally possible for a person skilled in the art, and the technical idea of ​​the present invention can be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is to be interpreted in the broadest scope according to the technical idea defined by the claims. [Explanation of symbols]

[0072] 1 Temperature Control System 2. Semiconductor manufacturing equipment 7 Cooling device 8 Heating device 11 1st circulation circuit 12 Second circulation circuit 13 Third circulation circuit 14 First Pump 15 Second Pump 16 First Buffer Tank 17 Second Buffer Tank 21 1st heat exchanger 22 Second heat exchanger 31 First Bypass Line 32 Second Bypass Line 34 First control valve 35 Second control valve 38 Motion control section 41 1st heat storage section 42 2nd heat storage section 44 1st heat storage material 45 Second heat storage material 51 Compressor 52 Condenser 53 Evaporator

Claims

1. A temperature control system for adjusting the temperature of a semiconductor manufacturing device, comprising: a first circulation circuit through which a first heat medium circulates; a second circulation circuit independent of the first circulation circuit and through which a second heat medium circulates; a third circulation circuit independent of the first circulation circuit and the second circulation circuit, through which a third heat medium circulates; a cooling device that cools the first heat medium flowing through the first circulation circuit; a heating device that heats the second heat medium flowing through the second circulation circuit; a first heat exchanger that exchanges heat between the first heat medium cooled by the cooling device and the third heat medium; a second heat exchanger that exchanges heat between the second heat medium heated by the heating device and the third heat medium; a first bypass line connected to the third circulation circuit and bypassing the first heat exchanger; a second bypass line connected to the third circulation circuit and bypassing the second heat exchanger; The first heat exchanger and the second heat exchanger are connected in series by the third circulation circuit.

2. The temperature control system further includes a first heat storage unit having a first heat storage material that stores thermal energy of the first heat medium, The temperature control system according to claim 1 , wherein the first heat storage unit is connected to the first circulation circuit and is disposed downstream of the first heat exchanger in a flow direction of the first heat medium.

3. the first heat storage unit is connected to the first circulation circuit and the third circulation circuit, the first heat storage unit is disposed downstream of the first heat exchanger in a flow direction of the first heat medium and upstream of the first heat exchanger in a flow direction of the third heat medium, The temperature control system according to claim 2 , wherein the first heat storage unit is configured to perform heat exchange between the third heat medium before being sent to the first heat exchanger and the first heat storage material.

4. The temperature control system further includes a second heat storage unit having a second heat storage material that stores thermal energy of the second heat medium, The temperature control system according to claim 1 , wherein the second heat storage unit is connected to the second circulation circuit and is disposed downstream of the second heat exchanger in a flow direction of the second heat medium.

5. the second heat storage unit is connected to the second circulation circuit and the third circulation circuit, the second heat storage unit is disposed downstream of the second heat exchanger in a flow direction of the second heat medium and upstream of the second heat exchanger in a flow direction of the third heat medium, The temperature control system according to claim 4 , wherein the second heat storage unit is configured to perform heat exchange between the third heat medium before being sent to the second heat exchanger and the second heat storage material.

6. the first heat exchanger and the second heat exchanger are a plurality of first heat exchangers and a plurality of second heat exchangers, the plurality of first heat exchangers are connected in parallel by the first circulation circuit; the plurality of second heat exchangers are connected in parallel by the second circulation circuit; the third circulation circuit is a plurality of third circulation circuits, the plurality of first heat exchangers and the plurality of second heat exchangers constitute a plurality of sets of first heat exchangers and second heat exchangers; the plurality of sets of first heat exchangers and second heat exchangers are respectively connected to the plurality of third circulation circuits; the first bypass lines are a plurality of first bypass lines that bypass the plurality of first heat exchangers, The temperature control system of claim 1 , wherein the second bypass line is a plurality of second bypass lines that bypass the plurality of second heat exchangers.

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