Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing device and a substrate processing method with which it is possible to improve the uniformity of spread of a gas in a structure in which the gas is discharged radially from a gas discharge opening.SOLUTION: The substrate processing device comprises a fluid nozzle 12 which is disposed facing the upper surface of a substrate being held by a spin chuck. The fluid nozzle 12 includes a lateral gas discharge opening 72 that discharges a gas radially toward the peripheral side from the central side of the upper surface of the substrate, ad a gas passage 76 for supplying the gas to the lateral gas discharge opening 72 and having a cylindrical shape along the vertical direction. The gas passage 76 has a gas retention part 80 which is larger in passage cross sectional area than that of the other sections of the gas passage 76, a rectifier structure 82 which is provided in a section of the gas passage 76 that is different from the gas retention part 80 and which rectifies the flow of the gas in the gas passage 76, a linear passage 85 that extends linearly in the vertical direction, and a bending passage 86 that causes the middle section of the linear passage 85 to bend. The bending passage 86 is a passage of an annular shape in a plan view that spreads in the horizontal direction.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus for processing a substrate and a substrate processing method for processing a substrate. Substrates to be processed include, for example, semiconductor wafers, substrates for flat panel displays (FPDs) such as liquid crystal display devices and organic electroluminescence (EL) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

Background Art

[0002] Patent Document 1 below discloses that an inert gas flow parallel to the upper surface of the substrate is formed from the center of the substrate toward the periphery, and by covering the upper surface of the substrate with the inert gas flow, adhesion of droplets and mist to the upper surface of the substrate can be suppressed or prevented.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In order to efficiently suppress the adhesion of droplets and mist of the processing liquid to the upper surface of the substrate, it is necessary to improve the uniformity of the spread of the gas discharged from the discharge port and directed from the center side to the peripheral side of the upper surface of the substrate. Therefore, one object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving the uniformity of the spread of the gas in a configuration in which the gas is discharged radially from the gas discharge port.

Means for Solving the Problems

[0005] One embodiment of the present invention includes a spin chuck that holds a substrate and a fluid nozzle disposed to face the main surface of the substrate held by the spin chuck. The fluid nozzle includes a gas discharge port that radially discharges gas from the center side to the peripheral side of the main surface of the substrate, and a gas flow path that supplies gas to the gas discharge port, the gas flow path having a cylindrical shape along the direction intersecting the main surface of the substrate. The gas flow path includes a gas retention portion having a larger flow path cross-sectional area than other portions in the gas flow path, a rectifying structure provided in a portion different from the gas retention portion in the gas flow path for rectifying the flow of gas in the gas flow path, a linear flow path linearly extending in the intersecting direction, and a bent flow path that bends a middle portion of the linear flow path. The bent flow path has an annular flow path in a plan view that spreads in the horizontal direction, and provides a substrate processing apparatus. At least one of the following features may be added to the substrate processing apparatus.

[0006] The fluid nozzle includes a plurality of the gas discharge ports and a plurality of the gas flow paths that respectively supply gas to the plurality of the gas discharge ports. The plurality of the gas discharge ports include a first gas discharge port and a second gas discharge port provided at a position farther from the main surface of the substrate in the intersecting direction than the first gas discharge port.

[0007] The gas flow path has a plurality of the bent flow paths.

[0008] Other embodiments of the present invention include a substrate holding step of holding a substrate, a processing liquid supply step of supplying a processing liquid to the upper surface of the substrate, and, at least after the start of the processing liquid supply step, a gas discharge port that discharges gas, and a fluid nozzle having a gas flow path that supplies gas to the gas discharge port. The gas flow path has a gas retention portion having a larger flow path cross-sectional area than other portions in the gas flow path, a rectifying structure provided in a portion different from the gas retention portion in the gas flow path for rectifying the flow of gas in the gas flow path, a linear flow path that linearly extends in the intersecting direction in the gas flow path, and a bent flow path that bends a middle portion of the linear flow path. The bent flow path is a circular ring-shaped flow path that spreads in the horizontal direction in a plan view. The method includes discharging gas from the gas discharge port of the fluid nozzle to form a radial air flow from the center side to the peripheral side of the upper surface of the substrate. At least one of the following features may be added to the substrate processing method.

[0009] The fluid nozzle includes a plurality of the gas discharge ports and a plurality of the gas flow paths that respectively supply gas to the plurality of the gas discharge ports. The plurality of the gas discharge ports include a first gas discharge port and a second gas discharge port provided at a position farther from the main surface of the substrate than the first gas discharge port in the intersecting direction.

[0010] The gas flow path has a plurality of the bent flow paths.

[0011] One aspect of the present disclosure provides a substrate processing apparatus including a spin chuck that holds a substrate and a fluid nozzle disposed to face the main surface of the substrate held by the spin chuck. The fluid nozzle includes a gas discharge port that discharges gas radially from the center side to the peripheral side of the main surface of the substrate, and a gas flow path that supplies gas to the gas discharge port. The gas flow path has a gas retention portion having a larger flow path cross-sectional area than other portions in the gas flow path, and a rectifying structure provided in a portion different from the gas retention portion in the gas flow path for rectifying the flow of gas in the gas flow path.

[0012] According to this configuration, a gas retention part that is larger than the flow path cross-sectional area at other locations in the gas flow path is provided in the gas flow path, so that the gas supplied to the gas retention part is dispersed within the gas retention part. Therefore, the flow velocity of the gas supplied to the gas retention part is reduced, and the flow velocity difference of the gas at each position in the circumferential direction of the gas flow path is reduced. Further, the gas in the gas flow path is rectified by a rectifying structure provided in a portion of the gas flow path different from the gas retention part. As a result, the moving direction of the gas in the gas flow path is aligned toward the gas discharge port, and the circumferential component of the flow velocity of the gas in the gas flow path is reduced. Therefore, the uniformity of the spread of the gas discharged from the gas discharge port and flowing from the center side to the peripheral side of the main surface of the substrate can be improved. As a result, the main surface of the substrate can be well protected by the gas discharged radially from the gas discharge port.

[0013] In one aspect of the present disclosure, the fluid nozzle includes a plurality of the gas discharge ports and a plurality of the gas flow paths that guide gas to the plurality of the gas discharge ports respectively. And the plurality of the gas discharge ports include a first gas discharge port and a second gas discharge port provided at a position farther from the main surface of the substrate than the first gas discharge port in the intersecting direction. According to this configuration, in addition to the first gas discharge port, gas is also discharged from the second gas discharge port provided at a position farther from the main surface of the substrate than the first gas discharge port. Therefore, the layer of gas flowing from the center side to the peripheral side of the main surface of the substrate can be thickened. Therefore, the main surface of the substrate can be protected better.

[0014] In one aspect of the present disclosure, the width of the second gas discharge port in the intersecting direction is narrower than the width of the first gas discharge port in the intersecting direction. When air enters the gas flow path from the gas discharge port, oxygen and water vapor may be mixed into the gas discharged from the gas discharge port. The mixing of oxygen and water vapor into the gas discharged from the gas discharge port may increase the oxygen concentration and humidity in the atmosphere near the main surface of the substrate.

[0015] If there is a configuration in which another gas discharge port (second gas discharge port) is provided at a position farther from the substrate than the gas discharge port (first gas discharge port), the entry of air into the gas discharge port (first gas discharge port) relatively close to the main surface of the substrate is suppressed by the gas discharged from the gas discharge port (second gas discharge port) relatively far from the main surface of the substrate. On the other hand, since no further gas discharge port is provided at a position farther from the main surface of the substrate than the second gas discharge port, there is no gas flow that suppresses the entry of air into the second gas discharge port. Therefore, by making the width of the second gas discharge port in the crossing direction narrower than the width of the first gas discharge port in the crossing direction, the entry of air into the second gas discharge port can be suppressed. Thereby, an increase in the oxygen concentration in the atmosphere near the main surface of the substrate can be suppressed. Thereby, the main surface of the substrate can be protected better.

[0016] In one aspect of the present disclosure, the width of the second gas discharge port in the crossing direction is wider than the width of the first gas discharge port in the crossing direction. When the atmospheric pressure near the main surface of the substrate is the case, the gas discharged from the first gas discharge port relatively close to the main surface of the substrate may be attracted to the main surface side of the substrate in the crossing direction, and the uniformity of the spread of the gas discharged from the first gas discharge port may be reduced.

[0017] Therefore, by making the width of the first gas discharge port narrower than the width of the second gas discharge port and increasing the linear velocity of the gas discharged from the first gas discharge port, it is possible to suppress the gas discharged from the first gas discharge port from being attracted to the main surface of the substrate. Thereby, the uniformity of the spread of the gas discharged from the gas discharge port from the center side to the peripheral side of the main surface of the substrate can be improved. In one aspect of the present disclosure, a plurality of first shielding portions are provided at intervals in the circumferential direction of the gas flow path and shield the movement of the gas to the downstream side of the gas flow path.

[0018] According to this configuration, the movement of the gas to the downstream side of the gas flow path is blocked by a plurality of first shielding portions provided at intervals in the circumferential direction. Therefore, when passing between two adjacent first shielding portions in the circumferential direction, the circumferential component of the gas flow velocity is reduced. As a result, the discharge direction of the gas discharged from the gas discharge port can be made closer to the radial direction of the gas flow path, so that the uniformity of the spread of the gas from the center side to the peripheral side of the main surface of the substrate can be further improved.

[0019] In one aspect of the present disclosure, the rectifying structure further includes a plurality of second shielding portions provided on the downstream side of the gas flow path with respect to the plurality of first shielding portions and blocking the movement of the gas to the downstream side of the gas flow path. And the positions of the plurality of second shielding portions in the circumferential direction are shifted from the positions of the plurality of first shielding portions in the circumferential direction. While the circumferential component of the gas flow velocity passing between two adjacent first shielding portions in the circumferential direction is reduced by the plurality of first shielding portions, on the downstream side of the plurality of first shielding portions in the gas flow path, the flow rate of the gas flowing at the same circumferential position as the first shielding portion is reduced. Therefore, if the circumferential positions of the plurality of second shielding portions that block the movement of the gas to the downstream side of the gas flow path are shifted from the circumferential positions of the plurality of first shielding portions on the downstream side of the plurality of first shielding portions, the flow rate of the gas flowing at the same circumferential position as the second shielding portion can be reduced, thereby improving the uniformity of the gas flow rate at each position in the circumferential direction. As a result, the uniformity of the spread of the gas from the center side to the peripheral side of the main surface of the substrate can be further improved.

[0020] Furthermore, the circumferential component of the gas velocity can be reduced by the plurality of second shielding portions in addition to the plurality of first shielding portions. That is, the circumferential component of the gas velocity can be reduced in two steps. As a result, the discharge direction of the gas discharged from the gas discharge port can be made even closer to the radial direction of the gas flow path. In one aspect of the present disclosure, the gas flow path further includes a linear flow path that linearly extends in the crossing direction, and a bent flow path that bends a middle portion of the linear flow path. By bending at the middle portion of the linear flow path, the flow velocity of the gas is reduced, and the flow velocity difference of the gas at each position in the circumferential direction of the gas flow path is reduced. Further, it is also possible to provide a flow rectifying structure in the bent flow path.

[0021] In one aspect of the present disclosure, the fluid nozzle further includes a nozzle body having a facing surface facing the main surface of the substrate and a side surface connected to the facing surface and having the gas discharge port opened therein, and the gas flow path is formed inside thereof. According to this substrate processing apparatus, the gas discharge port is formed in a cylindrical side surface connected to the facing surface facing the main surface of the substrate in the nozzle body. Therefore, it is easy to spread the gas radially from the gas discharge port.

[0022] In one aspect of the present disclosure, the fluid nozzle further includes a central gas discharge port that discharges gas toward the center of the main surface of the substrate. Further, a frustum-shaped concave portion that is recessed in a direction away from the main surface of the substrate is formed on the facing surface of the fluid nozzle, and the central gas discharge port is located within the concave portion. According to this configuration, since the central gas discharge port is located within the concave portion, the gas discharged from the central gas discharge port toward the center of the main surface of the substrate spreads within the concave portion. Since the concave portion is formed in a frustum shape, the gas can be evenly spread from the entire periphery of the concave portion to the outside of the concave portion. The uniformity of the spread of the gas from the center side to the peripheral side of the main surface of the substrate can be improved.

[0023] In one aspect of the present disclosure, the fluid nozzle further includes a processing liquid discharge port that is located within the concave portion and discharges the processing liquid toward the main surface of the substrate. Therefore, while discharging the processing liquid from the processing liquid discharge port to the main surface of the substrate, the gas can be discharged from the gas discharge port that opens from the side surface of the fluid nozzle, thereby protecting the processing liquid on the main surface of the substrate from the external atmosphere. For example, it is possible to suppress oxygen and water vapor contained in the external atmosphere from dissolving in the processing liquid on the main surface of the substrate.

[0024] Furthermore, by discharging gas from the central gas discharge port and pushing the processing liquid away toward the periphery of the substrate, it can be excluded from the periphery of the substrate. Since the gas discharged from the central gas discharge port spreads uniformly from the entire periphery of the concave portion to the outside of the concave portion, the processing liquid can be satisfactorily removed from the main surface of the substrate. In one aspect of the present disclosure, the nozzle body includes a plurality of flow path partitioning members each having a surface that partitions the gas flow path. According to this configuration, the gas flow path is partitioned by the surfaces of the flow path partitioning members. Therefore, compared with a configuration in which a gas flow path is formed inside a single member, it is easier to form the gas flow path.

[0025] In one aspect of the present disclosure, the substrate processing apparatus further includes a gas pipe connected to the fluid nozzle and supplying gas to the gas flow path from a direction parallel to the main surface of the substrate. Therefore, the gas supplied to the gas flow path from a direction parallel to the main surface of the substrate swirls in the circumferential direction within the gas flow path. Since a rectifying structure is provided at a portion different from the gas retention portion in the gas flow path, the gas in the gas flow path is rectified. Thereby, the uniformity of the spread of the gas from the center side to the peripheral side of the main surface of the substrate can be improved.

[0026] Another aspect of the present disclosure provides a substrate processing method including a substrate holding step of holding a substrate, a processing liquid supply step of supplying a processing liquid to the upper surface of the substrate, and a gas discharge port that discharges gas and a fluid nozzle having a gas flow path that supplies gas to the gas discharge port, at least after the start of the processing liquid supply step. In the gas flow path, there is a gas retention portion having a larger flow path cross-sectional area than other portions in the gas flow path, and a rectifying structure provided at a portion different from the gas retention portion in the gas flow path for rectifying the flow of the gas in the gas flow path. Gas is discharged from the gas discharge port of the fluid nozzle to form a radial air flow from the center side to the peripheral side of the upper surface of the substrate.

[0027] According to this configuration, the same effects as those of the above-described substrate processing apparatus are achieved.

Brief Description of the Drawings

[0028]

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[0029] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. <Configuration of Substrate Processing Apparatus> FIG. 1 is a plan view for explaining the configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 that process the substrate W with a processing liquid, a load port LP on which a carrier CA that houses a plurality of substrates W to be processed by the processing unit 2 is placed, transfer robots IR and CR that transfer the substrate W between the load port LP and the processing unit 2, and a controller 3 that controls the substrate processing apparatus 1. The transfer robot IR transfers the substrate W between the carrier CA and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have, for example, the same configuration.

[0030] In the processing unit 2, the substrate W has a pair of main surfaces and is processed with one of the main surfaces facing upward. At least one of the pair of main surfaces is a device surface on which a circuit pattern is formed. One of the pair of main surfaces may be a non-device surface on which no circuit pattern is formed. The circuit pattern may be, for example, a line-shaped pattern formed by fine trenches, or may be formed by providing a plurality of fine holes (voids or pores).

[0031] FIG. 2 is an illustrative cross-sectional view for explaining a configuration example of the processing unit 2. The processing unit 2 includes a spin chuck 5 that rotates the substrate W around a vertical rotation axis A1 passing through the central portion of the substrate W while holding the single substrate W in a horizontal posture, a heater unit 6 that heats the substrate W from the lower surface (lower main surface) side, a cylindrical processing cup 7 that surrounds the spin chuck 5, a chemical liquid nozzle 9 that supplies a chemical liquid such as hydrofluoric acid to the upper surface of the substrate W, a rinse liquid nozzle 10 that supplies a rinse liquid such as deionized water (DIW) to the upper surface (upper main surface) of the substrate W, a lower surface nozzle 11 that supplies a processing fluid to the lower surface of the substrate W, and a fluid nozzle 12 that supplies a gas such as nitrogen gas (N 2 ) and a low surface tension liquid such as IPA (isopropyl alcohol) to the upper surface of the substrate W. The low surface tension liquid is a liquid having a lower surface tension than a rinse liquid such as DIW.

[0032] The processing unit 2 further includes a chamber 13 (see FIG. 1) that houses the processing cup 7. Although not shown, the chamber 13 is formed with an inlet / outlet for loading / unloading the substrate W, and is provided with a shutter unit for opening and closing the inlet / outlet. The spin chuck 5 rotates the substrate W while holding the substrate W at a predetermined holding position. Specifically, the spin chuck 5 includes a plurality of chuck pins 20 that grip the substrate W, a spin base 21 that supports the plurality of chuck pins 20, a rotation shaft 22 coupled to the center of the lower surface of the spin base 21, and a spin motor 23 that applies a rotational force to the rotation shaft 22.

[0033] The rotation shaft 22 extends vertically along the rotation axis line A1 and is a hollow shaft in this embodiment. The spin base 21 has a disk shape along the horizontal direction and is coupled to the upper end of the rotation shaft 22. The plurality of chuck pins 20 are arranged at the peripheral edge of the upper surface of the spin base 21 at intervals in the circumferential direction of the spin base 21. The plurality of chuck pins 20 are movable between a closed position where they contact the peripheral edge of the substrate W to grip the substrate W and an open position where they retract from the peripheral edge of the substrate W. When the plurality of chuck pins 20 are in the open position, they contact the lower surface of the peripheral edge of the substrate W and support the substrate W from below.

[0034] The plurality of chuck pins 20 are driven to open and close by a chuck pin drive unit 25. The chuck pin drive unit 25 includes, for example, a link mechanism 26 built into the spin base 21 and a drive source 27 disposed outside the spin base 21. The drive source 27 includes, for example, a ball screw mechanism and an electric motor that applies a driving force thereto. The heater unit 6 has the form of a disk-shaped hot plate. The heater unit 6 is disposed between the upper surface of the spin base 21 and the lower surface of the substrate W.

[0035] The heater unit 6 includes a plate body 60 and a heater 61. The plate body 60 is slightly smaller than the substrate W in a plan view. The upper surface of the plate body 60 constitutes a heating surface 6a. The heater 61 may be a resistor built in the plate body 60. By energizing the heater 61, the heating surface 6a is heated. A lifting shaft 62 extending vertically along the rotation axis A1 is coupled to the lower surface of the heater unit 6. The lifting shaft 62 is inserted into a through hole 21a formed in the central portion of the spin base 21 and a hollow rotating shaft 22. A power supply line 63 is passed through the lifting shaft 62.

[0036] Power is supplied to the heater 61 from a heater energization unit 64 via the power supply line 63. The heater energization unit 64 is, for example, a power source. The heater unit 6 is lifted and lowered by a heater lifting unit 65. The heater lifting unit 65 includes, for example, an actuator (not shown) such as an electric motor or an air cylinder that drives the lifting shaft 62 to move up and down. The heater lifting unit 65 is also referred to as a heater lifter.

[0037] The heater lifting unit 65 lifts and lowers the heater unit 6 via the lifting shaft 62. The heater unit 6 can be lifted and lowered by the heater lifting unit 65 and positioned at a lower position and an upper position. The heater lifting unit 65 can arrange the heater unit 6 not only at the lower position and the upper position but also at any position between the lower position and the upper position. When rising, the heater unit 6 can receive the substrate W from a plurality of chuck pins 20 located at the open position. The heater unit 6 can heat the substrate W by radiant heat from the heating surface 6a by being arranged at a contact position in contact with the lower surface of the substrate W or a proximity position close to the lower surface of the substrate W without contact by the heater lifting unit 65. By positioning the heater unit 6 at the contact position, the substrate W can be heated with a larger amount of heat by heat conduction from the heating surface 6a.

[0038] The processing cup 7 receives the liquid scattered from the substrate W held by the spin chuck 5. The processing cup 7 includes a plurality of guards 30 that receive the liquid scattered outward from the substrate W held by the spin chuck 5, a plurality of cups 31 that receive the liquid guided downward by the plurality of guards 30, and a cylindrical outer wall member 32 that surrounds the plurality of guards 30 and the plurality of cups 31. In this embodiment, an example in which two guards 30 and two cups 31 are provided is shown.

[0039] Each guard 30 has a substantially cylindrical shape. The upper end portion of each guard 30 is inclined inward toward the spin base 21. The plurality of cups 31 are respectively disposed below the plurality of guards 30. The cup 31 forms an annular liquid receiving groove for receiving the processing liquid guided downward by the guard 30. Each guard 30 is individually lifted and lowered by a guard lifting unit 33. The guard lifting unit 33 positions each guard 30 at an arbitrary position from the upper position to the lower position. FIG. 2 shows a state in which the two guards 30 are both disposed at the lower position. The upper position is a position where the upper end of the guard 30 is disposed above the holding position where the substrate W held by the spin chuck 5 is disposed. The lower position is a position where the upper end of the guard 30 is disposed below the holding position.

[0040] The guard lifting unit 33 includes, for example, a plurality of ball screw mechanisms (not shown) respectively coupled to the plurality of guards 30, and a plurality of motors (not shown) that apply a driving force to each ball screw mechanism. The guard lifting unit 33 is also referred to as a guard lifter. When supplying liquid to the rotating substrate W, at least one guard 30 is disposed at the upper position. In this state, when the liquid is supplied to the substrate W, the liquid is flung outward from the substrate W. The flung liquid collides with the inner surface of the guard 30 facing the substrate W horizontally, and is guided to the cup 31 corresponding to this guard 30. When the transfer robot CR (see FIG. 1) accesses the spin chuck 5 during the loading and unloading of the substrate W, all the guards 30 are positioned at the lower position.

[0041] In this embodiment, the chemical liquid nozzle 9 is a movable nozzle that can move in the horizontal direction. The chemical liquid nozzle 9 is moved horizontally by the first nozzle moving unit 35. The chemical liquid nozzle 9 can move between the central position and the home position (retracted position) in the horizontal direction. When the chemical liquid nozzle 9 is located at the central position, it faces the rotation center of the upper surface of the substrate W. The rotation center of the upper surface of the substrate W is the intersection position with the rotation axis A1 on the upper surface of the substrate W. When the chemical liquid nozzle 9 is located at the home position, it does not face the upper surface of the substrate W and is located outside the processing cup 7 in plan view.

[0042] The chemical liquid nozzle 9 is connected to a chemical liquid pipe 40 that guides the chemical liquid to the chemical liquid nozzle 9. A chemical liquid valve 50 for opening and closing the flow path in the chemical liquid pipe 40 is interposed in the chemical liquid pipe 40. When the chemical liquid valve 50 is opened, the chemical liquid is continuously discharged downward from the discharge port of the chemical liquid nozzle 9. When the chemical liquid valve 50 is opened when the chemical liquid nozzle 9 is located at the central position, the chemical liquid is supplied to the central region including the rotation center of the upper surface of the substrate W.

[0043] Unlike this embodiment, the chemical liquid nozzle 9 may be a fixed nozzle with fixed horizontal and vertical positions. Also, unlike this embodiment, the chemical liquid nozzle 9 may have a form of a two-fluid nozzle that can mix and discharge a liquid and a gas. Specific examples of the chemical liquid discharged from the chemical liquid nozzle 9 are an etching liquid and a cleaning liquid. More specifically, the chemical liquid may be hydrofluoric acid, APM liquid (ammonia hydrogen peroxide water mixture), HPM liquid (hydrochloric acid hydrogen peroxide water mixture), buffered hydrofluoric acid (mixture of hydrofluoric acid and ammonium fluoride), etc.

[0044] In this embodiment, the rinse liquid nozzle 10 is a fixed nozzle arranged to discharge the rinse liquid toward the center of rotation of the upper surface of the substrate W. A rinse liquid valve 51 for opening and closing the flow path in the rinse liquid pipe 41 is connected to the rinse liquid nozzle 10. When the rinse liquid valve 51 is opened, the rinse liquid is discharged continuously downward from the discharge port of the rinse liquid nozzle 10 and supplied to the central region of the upper surface of the substrate W. The rinse liquid nozzle 10 does not necessarily have to be a fixed nozzle, and may be a moving nozzle that moves at least in the horizontal direction.

[0045] The rinse liquid discharged from the rinse liquid nozzle 10 is not limited to DIW, and may be any of carbonated water, electrolyzed ionized water, hydrogen water, ozone water, diluted ammonia water (for example, about 10 ppm or more and 100 ppm or less), and hydrochloric acid water with a dilution concentration (for example, about 10 ppm or more and 100 ppm or less). The lower surface nozzle 11 is inserted into the hollow lifting shaft 62 and further penetrates the heater unit 6. The lower surface nozzle 11 has a discharge port 11a at the upper end facing the central region of the lower surface of the substrate W. A fluid pipe 42 for guiding the processing fluid to the lower surface nozzle 11 is connected to the lower surface nozzle 11. A fluid valve 52 for opening and closing the flow path in the fluid pipe 42 is connected to the lower surface nozzle 11. When the fluid valve 52 is opened, the processing fluid is discharged continuously upward from the discharge port 11a of the lower surface nozzle 11 and supplied to the central region of the lower surface of the substrate W. The supplied processing fluid may be a liquid or a gas.

[0046] The fluid nozzle 12 is moved in the horizontal and vertical directions by the second nozzle moving unit 36. The fluid nozzle 12 can be moved between a center position facing the center of rotation of the upper surface of the substrate W and a home position (retracted position) not facing the upper surface of the substrate W by moving in the horizontal direction. Therefore, the fluid nozzle 12 can be positioned at a position facing the upper surface of the substrate W held by the spin chuck 5.

[0047] The home position that does not face the upper surface of the substrate W is a position outside the spin base 21 in a plan view, and more specifically, it may be a position outside the processing cup 7. The fluid nozzle 12 can be moved vertically to approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W. The second nozzle moving unit 36 includes, for example, a rotation axis 36a along the vertical direction, an arm 36b coupled to the rotation axis 36a and extending horizontally, and an arm driving mechanism 36c that drives the arm 36b. The arm driving mechanism 36c swings the arm 36b by rotating the rotation axis 36a around a vertical rotation axis, and moves the arm 36b up and down by moving the rotation axis 36a up and down along the vertical direction. The fluid nozzle 12 is fixed to the arm 36b. In response to the swinging and up-and-down movement of the arm 36b, the fluid nozzle 12 moves in the horizontal and vertical directions. The arm driving mechanism 36c includes an actuator (not shown) such as an electric motor or an air cylinder.

[0048] In this embodiment, the fluid nozzle 12 has a function as a low surface tension liquid nozzle (processing liquid nozzle) that discharges a low surface tension liquid and a function as a gas nozzle that discharges gas. A low surface tension liquid pipe 43 (processing liquid pipe), a central gas pipe 44, and a plurality of side gas pipes 45 (a first side gas pipe 45A and a second side gas pipe 45B) are connected to the fluid nozzle 12.

[0049] A low surface tension liquid valve 53 (processing liquid valve) that opens and closes the flow path thereof is interposed in the low surface tension liquid pipe 43. A central gas valve 54 that opens and closes the flow path thereof is interposed in the central gas pipe 44. A plurality of side gas valves 55 (a first side gas valve 55A and a second side gas valve 55B) are respectively interposed in the plurality of side gas pipes 45. The flow path in each side gas pipe 45 is opened and closed by the corresponding side gas valve 55.

[0050] In the central gas pipe 44, in addition to the central gas valve 54, a mass flow controller 56 for accurately adjusting the flow rate of the gas flowing through the flow path in the central gas pipe 44 is interposed. In the first side gas pipe 45A, in addition to the first side gas valve 55A, a first variable flow rate valve 57A for adjusting the flow rate of the gas flowing through the flow path in the first side gas pipe 45A is interposed. In the second side gas pipe 45B, in addition to the second side gas valve 55B, a second variable flow rate valve 57B for adjusting the flow rate of the gas flowing through the flow path in the second side gas pipe 45B is interposed. Further, in each gas pipe (the central gas pipe 44 and the plurality of side gas pipes 45), a filter 58 for removing foreign matter is interposed respectively.

[0051] The fluid nozzle 12 includes a low surface tension liquid discharge port (processing liquid discharge port) 70 that discharges the low surface tension liquid supplied from the low surface tension liquid pipe 43 downward in a continuous flow, a central gas discharge port 71 that discharges the gas supplied from the central gas pipe 44 downward linearly, and a plurality of side gas discharge ports 72 (a first side gas discharge port 72A and a second side gas discharge port 72B) that discharge the gas supplied from the corresponding side gas pipe 45 radially in the horizontal direction. The gas discharged from the plurality of side gas discharge ports 72 forms a parallel air flow 100 that is an air flow parallel to the upper surface of the substrate W.

[0052] The low surface tension liquid discharged from the fluid nozzle 12 is, for example, an organic solvent such as IPA. The organic solvent that functions as the low surface tension liquid includes, for example, a liquid containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and Trans-1,2-dichloroethylene.

[0053] The organic solvent that functions as the low surface tension liquid does not have to consist of only a single component and may be a liquid mixed with other components. For example, it may be a mixed liquid of IPA and DIW, or a mixed liquid of IPA and HFE. The gas discharged from the fluid nozzle 12 is not limited to nitrogen gas. The gas discharged from the fluid nozzle 12 may be air. Also, the gas discharged from the fluid nozzle 12 may be an inert gas other than nitrogen gas. The inert gas is not limited to nitrogen gas and is a gas that is inert with respect to the upper surface of the substrate W. Examples of the inert gas include noble gases such as argon in addition to nitrogen gas.

[0054] Next, the configuration of the fluid nozzle 12 will be described with reference to FIGS. 3 to 9. FIG. 3 is a schematic plan view for explaining a configuration example of the fluid nozzle 12. FIG. 3 shows a state where the fluid nozzle 12 is located at the central position. Referring to FIG. 3, when the fluid nozzle 12 is located at the central position, the central gas discharge port 71 faces the center C of the upper surface of the substrate W. Usually, the center C of the upper surface of the substrate W coincides with the rotation center of the upper surface of the substrate W. That is, the vertical central axis A2 passing through the center C of the upper surface of the substrate W coincides with the rotation axis A1. When the fluid nozzle 12 is located at the central position, each side gas discharge port 72 discharges gas radially from the center side to the peripheral side of the upper surface of the substrate W. Hereinafter, unless otherwise specified, the configuration of the fluid nozzle 12 will be described on the premise that the fluid nozzle 12 is located at the central position.

[0055] FIG. 4 is a cross-sectional view taken along the line IV-IV shown in FIG. 3. FIG. 5 is an enlarged view of the V region shown in FIG. 4. FIG. 6 is a cross-sectional view taken along the line VI-VI shown in FIG. 4. FIG. 7 is a cross-sectional view taken along the line VII-VII shown in FIG. 4. FIG. 8 is a cross-sectional view taken along the line VIII-VIII shown in FIG. 4. FIG. 9 is a cross-sectional view taken along the line IX-IX shown in FIG. 4. Referring to FIG. 4, the fluid nozzle 12 includes a nozzle body 75 having a substantially cylindrical shape extending in the vertical direction, a plurality of gas flow paths 76 (a first gas flow path 76A and a second gas flow path 76B) for supplying (guiding) gas to a plurality of side gas discharge ports 72 (a first side gas discharge port 72A and a second side gas discharge port 72B), respectively, and a plurality of gas inlets 77 (a first gas inlet 77A and a second gas inlet 77B) for allowing gas to flow into each of the plurality of gas flow paths 76 from a corresponding side gas pipe 45. Each side gas pipe 45 extends in the horizontal direction (a direction parallel to the upper surface of the substrate W) and is inserted into a corresponding gas inlet 77.

[0056] The nozzle body 75 has a bottom surface (lower surface) 75a and a substantially cylindrical side surface 75b connected to the bottom surface 75a and extending in the vertical direction. The bottom surface 75a is a facing surface facing the upper surface of the substrate W in a state where the fluid nozzle 12 is located at the central position. The plurality of side gas discharge ports 72 and the plurality of gas flow paths 76 are formed inside the nozzle body 75. Each gas flow path 76 has a substantially cylindrical shape along the vertical direction. The second gas flow path 76B is provided outside the first gas flow path 76A and coaxially with the first gas flow path 76A. The first gas flow path 76A and the second gas flow path 76B are rotationally symmetric about their center line A3. When the fluid nozzle 12 is located at the central position, the center line A3 of the gas flow path 76 coincides with the rotation axis line A1 and the central axis line A2.

[0057] The first side gas discharge port 72A has an annular shape in plan view and opens from the lower end portion of the side surface 75b. The second side gas discharge port 72B has an annular shape in plan view and is provided at a position (a position away from the bottom surface 75a) farther from the upper surface of the substrate W than the first side gas discharge port 72A on the side surface 75b. The gas discharged from each side gas discharge port 72 spreads radially outward of the side surface 75b. A plurality of gas flow paths 76 are respectively connected to the plurality of side gas discharge ports 72.

[0058] Both the first side gas outlet 72A and the second side gas outlet 72B are rotationally symmetric about the central axis A2 of the substrate W (the center line A3 of the gas flow path 76). In other words, the second side gas outlet 72B is located coaxially with the first side gas outlet 72A. The entire side surface 75b does not necessarily have to be cylindrical, and only the region where a plurality of side gas outlets 72 are open on the side surface 75b may constitute a cylindrical surface.

[0059] The width W1 of the first side gas outlet 72A in the crossing direction D1 (typically, the vertical direction) with respect to the upper surface of the substrate W is larger than the width W2 of the second side gas outlet 72B in the crossing direction D1 (typically, the vertical direction) with respect to the upper surface of the substrate W. The width W1 is, for example, 3 mm or more and 4 mm or less, and the width W2 is, for example, 2 mm or more and 3 mm or less. Each side gas outlet 72 is partitioned by a pair of outlet partition screens 78 (an upper outlet partition screen 78A and a lower outlet partition screen 78B) formed inside the nozzle body 75. Each gas flow path 76 is partitioned by a pair of flow path partition screens 79 (an inner flow path partition screen 79A and an outer flow path partition screen 79B) formed inside the nozzle body 75. The pair of flow path partition screens 79 are connected to each of the pair of outlet partition screens 78.

[0060] On the bottom surface 75a of the nozzle body 75, a substantially frustum-shaped concave portion 75c that depresses the nozzle body 75 is formed. The concave portion 75c is recessed in the direction away from the upper surface of the substrate W (the crossing direction D1, typically, the vertical direction). At the central portion of the nozzle body 75, a central gas pipe 44 and a low surface tension liquid pipe 43 are inserted in parallel with the center line A3. The lower ends of the central gas pipe 44 and the low surface tension liquid pipe 43 are located in the concave portion 75c of the nozzle body 75. The lower end of the central gas pipe 44 constitutes the central gas outlet 71. The lower end of the low surface tension liquid pipe 43 constitutes the low surface tension liquid outlet 70. The central gas outlet 71 and the low surface tension liquid outlet 70 are located within the concave portion 75c. The low surface tension liquid outlet 70 is located laterally of the central gas outlet 71.

[0061] Each gas flow path 76 has the same configuration. Therefore, hereinafter, with reference to FIG. 5 which is an enlarged view showing the periphery of the first gas flow path 76A in FIG. 4, the details of the gas flow path 76 will be described. Each gas flow path 76 has a larger flow path cross-sectional area than other portions in the gas flow path 76, a gas retention portion 80 for retaining the gas G therein, a narrow flow path 81 that connects the gas retention portion 80 and the corresponding side gas discharge port 72 and has a smaller flow path cross-sectional area than the gas retention portion 80, and a rectifying structure 82 provided in the narrow flow path 81 (a portion different from the gas retention portion 80 in the gas flow path 76) for rectifying the gas flow in the gas flow path 76.

[0062] The flow path cross-sectional area is the area of a cross-section along a direction orthogonal to the direction along the gas flow path 76 (flow path direction). The flow path cross-sectional area CA1 of the gas retention portion 80 is the cross-sectional area of the gas flow path 76 along the horizontal direction. In the first embodiment, the narrow flow path 81 includes a linear flow path 85 that connects the downstream end of the gas retention portion 80 and the upstream end of the corresponding side gas discharge port 72 and linearly extends in the intersecting direction D1 (typically, the orthogonal direction and also the vertical direction) with respect to the circumferential direction CD around the center line A3 of the gas flow path 76, and a bent flow path 86 that bends a middle portion of the linear flow path 85. The linear flow path 85 includes an upstream linear flow path 87 that is connected to the downstream end of the gas retention portion 80 and the upstream end of the bent flow path 86 and linearly extends in the intersecting direction D1, and a downstream linear flow path 88 that is connected to the corresponding side gas discharge port 72 and the upstream end of the bent flow path 86 and linearly extends in the intersecting direction D1. The bent flow path 86 is an annular flow path in a plan view that spreads in the horizontal direction.

[0063] The rectifying structure 82 includes a plurality of first shielding portions 90 that shield the movement of the gas to the downstream side of the gas flow path 76, and a plurality of second shielding portions 91 that are provided on the downstream side of the gas flow path 76 with respect to the plurality of first shielding portions 90 and shield the movement of the gas to the downstream side of the gas flow path 76. In the first embodiment, the plurality of first shielding portions 90 are provided in the upstream linear flow path 87, and the plurality of second shielding portions 91 are provided in the downstream linear flow path 88.

[0064] Referring to FIG. 6, the plurality of first shielding portions 90 are provided at intervals in the circumferential direction CD. The gas G (see FIG. 8) in the upstream straight flow path 87 flows downstream through the gap (first rectifying flow path 95) between adjacent first shielding portions 90. Referring to FIG. 7, the plurality of second shielding portions 91 are also provided at intervals in the circumferential direction CD. The gas G (see FIG. 8) in the downstream straight flow path 88 flows downstream through the gap (second rectifying flow path 96) between adjacent second shielding portions 91.

[0065] Referring to FIG. 8, the positions of the plurality of second shielding portions 91 in the circumferential direction CD (circumferential phase of the second shielding portion 91) are shifted from the positions of the plurality of first shielding portions 90 in the circumferential direction CD (circumferential phase of the first shielding portion 90). In other words, the circumferential phase of the plurality of second shielding portions 91 is different from the circumferential phase of the plurality of first shielding portions 90. The first rectifying flow path 95 between adjacent first shielding portions 90 is linear along the crossing direction D1. The second rectifying flow path 96 between adjacent second shielding portions 91 is linear along the crossing direction D1. The positions of the plurality of second rectifying flow paths 96 in the circumferential direction CD are shifted from the positions of the plurality of first rectifying flow paths 95 in the circumferential direction CD. In other words, the circumferential phase of the plurality of second rectifying flow paths 96 is different from the circumferential phase of the plurality of first rectifying flow paths 95.

[0066] By using such a fluid nozzle 12, the following effects are achieved. Each gas inlet 77 allows the gas G to flow into the gas retention portion 80 of the corresponding gas flow path 76 from the circumferential direction CD (direction parallel to the upper surface of the substrate W) of the gas flow path 76 (see FIG. 5). The gas G supplied to the gas retention portion 80 forms a swirling airflow TG in the gas retention portion 80 along the circumferential direction CD as shown in FIG. 9. The flow cross-sectional area CA1 of the gas retention portion 80 is larger than the flow cross-sectional area CA2 of other portions in the gas flow path 76, that is, the inside of the gas retention portion 80 is a large space. Therefore, the gas G is dispersed in the gas retention portion 80. Therefore, the flow velocity of the gas G supplied into the gas retention portion 80 is reduced, and the flow velocity difference of the gas G at each position in the circumferential direction CD of the gas flow path 76 is reduced. That is, the gas flowing into the gas retention portion 80 stays in the gas retention portion 80.

[0067] The gas G in the gas retention part 80 flows into the narrow flow path 81 from its downstream end. The gas G flowing in the narrow flow path 81 is rectified by the rectification structure 82, and the circumferential component of the flow velocity of the gas G is reduced. Thereby, the moving direction of the gas G is aligned along the gas flow path 76. Specifically, since a part of the upstream straight flow path 87 in the circumferential direction CD is blocked by the plurality of first shielding parts 90, when passing between two adjacent first shielding parts 90 in the circumferential direction CD (the first rectification flow path 95), the circumferential component of the flow velocity of the gas is reduced.

[0068] While the circumferential component of the flow velocity of the gas G passing through the first rectification flow path 95 is reduced, on the downstream side of the plurality of first shielding parts 90 in the gas flow path 76, the flow rate of the gas G flowing at the same circumferential position as the first shielding parts 90 is reduced. In the first embodiment, on the downstream side of the plurality of first shielding parts 90 in the gas flow path 76, a plurality of second shielding parts 91 that shield the movement of the gas G to the downstream side of the gas flow path 76 are arranged at positions shifted in the circumferential direction CD from the plurality of first shielding parts 90. Therefore, the flow rate of the gas G flowing at the same circumferential position as the second shielding part 91 can be reduced, and thereby, the uniformity of the flow rate of the gas G at each position in the circumferential direction CD can be improved. Also, the circumferential component of the velocity of the gas G is reduced in two steps by the plurality of first shielding parts 90 and the plurality of second shielding parts 91. Thereby, the moving direction of the gas G flowing through the gas flow path 76 can be made closer to the radial direction RD.

[0069] When the gas flows through the narrow flow path 81, it flows from the upstream straight flow path 87 into the bent flow path 86. At that time, the gas collides with the part that partitions the bent flow path 86 in the flow path partition surface 79, and the flow velocity of the gas is reduced. Thereby, the flow velocity difference of the gas at each position in the circumferential direction CD is further reduced. The gas that has passed through the narrow flow path 81 is discharged radially from the corresponding side gas discharge port 72.

[0070] In this way, due to the gas retention portion 80 and the bent flow path 86, the flow velocity of the gas is reduced, and the flow velocity difference of the gas in the circumferential direction CD is reduced. Therefore, the uniformity of the spread (parallel air flow 100) of the gas G discharged from the corresponding side gas discharge port 72 from the center side to the peripheral side of the upper surface of the substrate W can be improved. By the flow rectifying structure 82, the circumferential component of the flow velocity of the gas is reduced, and the discharge direction of the gas from the side gas discharge port 72 is adjusted to the direction along the gas flow path 76 (here, the radial direction RD). As a result, the upper surface of the substrate W can be protected well.

[0071] The gas retention portion 80 is provided on the most upstream side of the gas flow path 76 (upstream side of the narrow flow path 81). Therefore, a sufficient flow path for the gas G whose flow velocity is reduced by the gas retention portion 80 can be secured. Thus, it is easy to rectify the gas G in a desired direction. In addition to the first side gas discharge port 72A, gas is also discharged from the second side gas discharge port 72B provided at a position farther from the upper surface of the substrate W than the first side gas discharge port 72A. Therefore, the layer (parallel air flow 100) of the gas from the center side to the peripheral side of the upper surface of the substrate W can be thickened. Thus, the upper surface of the substrate W can be protected better.

[0072] The side gas discharge port 72 is formed on the cylindrical side surface 75b connected to the bottom surface 75a facing the upper surface of the substrate W in the nozzle body 75. Therefore, it is easy to spread the gas radially from the side gas discharge port 72. Since the central gas discharge port 71 is located in the recess 75c, the gas discharged from the central gas discharge port 71 toward the center C of the upper surface of the substrate W spreads in the recess 75c and fills between the upper surface of the substrate W and the recess 75c. Since the recess 75c is formed in a frustum of a cone shape, the gas can be evenly spread from the entire periphery of the recess 75c to the outside of the recess 75c. The uniformity of the spread of the gas from the center C side to the peripheral side of the upper surface of the substrate W can be improved.

[0073] FIG. 10 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls the controlled objects provided in the substrate processing apparatus 1 according to a predetermined control program. Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B in which a control program is stored. The controller 3 is configured to execute various controls for substrate processing when the processor 3A executes the control program.

[0074] In particular, the controller 3 is programmed to control the transfer robots IR, CR, the spin motor 23, the first nozzle moving unit 35, the second nozzle moving unit 36, the heater energization unit 64, the heater lifting unit 65, the guard lifting unit 33, the chuck pin driving unit 25, the chemical liquid valve 50, the rinse liquid valve 51, the fluid valve 52, the low surface tension liquid valve 53, the central gas valve 54, the side gas valve 55, the mass flow controller 56, the first flow rate variable valve 57A, and the second flow rate variable valve 57B. By controlling the valves by the controller 3, the presence or absence of fluid discharge from the corresponding nozzle and the discharge flow rate of the fluid from the corresponding nozzle are controlled.

[0075] The following respective steps are executed by the controller 3 controlling these configurations. In other words, the controller 3 is programmed to execute the following respective steps. FIG. 11 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus 1, and mainly shows the processing realized by the controller 3 executing an operation program. In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 11, chemical liquid processing (step S1), rinse processing (step S2), low surface tension liquid processing (step S3), and drying processing (step S4) are executed in this order.

[0076] Hereinafter, the substrate processing executed by the substrate processing apparatus 1 will be mainly described with reference to FIGS. 2 and 11. The unprocessed substrate W is carried into the processing unit 2 from the carrier CA by the transfer robots IR and CR and delivered to the spin chuck 5 (substrate loading step). At this time, the heater unit 6 is disposed at the lower position. Also, the chuck pin drive unit 25 moves the chuck pins 20 to the open position. In this state, the transfer robot CR delivers the substrate W to the spin chuck 5. Thereafter, the substrate W is held by the spin chuck 5 until it is carried out by the transfer robot CR (substrate holding step). Thereafter, the chuck pin drive unit 25 moves the plurality of chuck pins 20 to the closed position. Thereby, the substrate W is gripped by the plurality of chuck pins 20.

[0077] After the transfer robot CR retreats outside the processing unit 2, chemical solution treatment (step S1) is started. The controller 3 drives the spin motor 23 to rotate the spin base 21 at a predetermined chemical solution rotation speed. On the other hand, the first nozzle moving unit 35 disposes the chemical solution nozzle 9 at the chemical solution treatment position above the substrate W. The chemical solution treatment position may be the central position. Then, the chemical solution valve 50 is opened. Thereby, a chemical solution such as hydrofluoric acid is supplied from the chemical solution nozzle 9 toward the upper surface of the rotating substrate W. The supplied chemical solution spreads over the entire surface of the substrate W by centrifugal force.

[0078] After the chemical solution treatment for a certain period of time, a rinse process (step S2) for removing the chemical solution from the substrate W is executed by replacing the chemical solution on the substrate W with a rinse solution such as DIW. Specifically, the chemical solution valve 50 is closed, and instead, the rinse solution valve 51 is opened. Thereby, a rinse solution is supplied from the rinse solution nozzle 10 toward the upper surface of the rotating substrate W. The supplied rinse solution spreads over the entire surface of the substrate W by centrifugal force. The chemical solution on the substrate W is washed away by this rinse solution. During this time, the first nozzle moving unit retracts the chemical solution nozzle 9 from above the substrate W to the side of the processing cup 7.

[0079] After the rinsing process for a certain period of time, a low surface tension liquid treatment (step S3) is performed to replace the rinsing liquid on the substrate W with a low surface tension liquid such as IPA. FIGS. 12A to 12D are schematic diagrams for explaining the state of the low surface tension liquid treatment of the substrate treatment performed by the substrate treatment apparatus 1. Hereinafter, in addition to FIGS. 2 and 11, FIGS. 12A to 12D are also referred to as appropriate. Specifically, the second nozzle moving unit 36 moves the fluid nozzle 12 to the low surface tension liquid treatment position above the substrate W. The low surface tension liquid treatment position may be a position where the low surface tension liquid discharged from the low surface tension liquid discharge port 70 provided in the fluid nozzle 12 lands on the rotation center of the upper surface of the substrate W.

[0080] Then, the rinse liquid valve 51 is closed to stop the discharge of the rinse liquid from the rinse liquid nozzle 10. With the discharge of the rinse liquid from the rinse liquid nozzle 10 stopped, the first side gas valve 55A and the second side gas valve 55B are opened. Thereby, gas is discharged radially from the first side gas discharge port 72A and the second side gas discharge port 72B of the fluid nozzle 12 from the center C side to the peripheral side of the substrate W (gas discharge step). Thereby, as shown in FIG. 12A, a parallel air flow 100 is formed, and the entire upper surface of the substrate W (exactly the outer region of the fluid nozzle 12 in plan view) is covered by the parallel air flow 100 (air flow forming step, upper surface covering step).

[0081] In that state, the low surface tension liquid valve 53 is opened. Thereby, the low surface tension liquid is supplied from the fluid nozzle 12 (low surface tension liquid discharge port 70) toward the upper surface of the rotating substrate W (low surface tension liquid supply step, treatment liquid supply step). The supplied low surface tension liquid spreads over the entire surface of the substrate W by centrifugal force and replaces the rinse liquid on the substrate W. Thereby, a liquid film 110 of the low surface tension liquid is formed on the upper surface of the substrate W (liquid film forming step).

[0082] In the treatment of a low surface tension liquid, the spin motor 23 decelerates the rotation of the spin chuck 5 to stop the rotation of the substrate W. Then, the low surface tension liquid valve 53 is closed to stop the supply of the low surface tension liquid. As a result, as shown in FIG. 12B, a paddle state is formed in which the liquid film 110 is supported on the stationary substrate W. In the state where the rotation is stopped, the chuck pin drive unit 25 moves the plurality of chuck pins 20 to the open position, and the heater lifting unit 65 raises the heater unit 6 toward the substrate W. Thereby, the heater unit 6 receives the substrate W from the plurality of chuck pins 20. The heater unit 6 heats the substrate W in a lifted state. By heating the substrate W, a part of the low surface tension liquid in contact with the upper surface of the substrate W evaporates, and thereby a gas phase layer is formed between the liquid film 110 and the upper surface of the substrate W. The liquid film 110 supported by the gas phase layer is removed. The gas phase layer is preferably formed to have a thickness such that the low surface tension liquid does not enter the recesses (trenches, micropores) of the circuit pattern on the upper surface of the substrate W. If so, the surface tension of the low surface tension liquid acting on the circuit pattern can be reduced.

[0083] When removing the liquid film 110 of the low surface tension liquid, the second nozzle moving unit 36 moves the fluid nozzle 12 to the central position. Then, the central gas valve 54 is opened. As a result, as shown in FIG. 12C, gas is linearly discharged from the central gas discharge port 71 toward the liquid film 110 on the substrate W (vertical gas discharge process). At the position where the gas is discharged, that is, at the center C of the substrate W, the liquid film 110 is removed by the gas, and an opening 111 is formed at the center of the liquid film 110 to expose the upper surface of the substrate W (opening formation process). The gas supplied toward the upper surface of the substrate W forms a parallel air flow 101 that spreads radially along the upper surface of the substrate W. As shown in FIG. 12D, by continuing the discharge of gas from the central gas discharge port 71, the low surface tension liquid is pushed toward the periphery of the substrate W by the parallel air flow 101, and the opening 111 is enlarged. By enlarging the opening 111, the low surface tension liquid on the substrate W is discharged outside the substrate W (opening enlargement process, liquid film removal process).

[0084] Thus, after the low surface tension liquid treatment is completed, the spin motor 23 rotates the substrate W at a high speed at the drying rotation speed. Thereby, a drying process (step S4) is performed to shake off the liquid components on the substrate W by centrifugal force. Thereafter, the second nozzle moving unit 36 retracts the fluid nozzle 12, and further, the spin motor 23 stops the rotation of the spin chuck 5. Also, the heater elevating unit 65 moves the heater unit 6 to the lower position. Further, the chuck pin driving unit 25 moves the chuck pin 20 to the open position. Thereafter, referring also to FIG. 1, the transfer robot CR enters the processing unit 2, scoops up the processed substrate W from the spin chuck 5, and carries it out of the processing unit 2 (substrate carry-out step). The substrate W is transferred from the transfer robot CR to the transfer robot IR and stored in the carrier CA by the transfer robot IR.

[0085] In the low surface tension liquid treatment shown in FIGS. 12A to 12D, the supply of the low surface tension liquid from the fluid nozzle 12 is started in a state where the parallel air flow 100 is formed, but it is not always necessary to discharge the gas from the first side gas discharge port 72A and the second side gas discharge port 72B prior to the supply of the low surface tension liquid. That is, the discharge of the low surface tension liquid may be started earlier than the discharge of the gas, or after the discharge of the low surface tension liquid is completed, that is, after the paddle state is formed, the discharge of the gas from the first side gas discharge port 72A and the second side gas discharge port 72B may be started.

[0086] By using the fluid nozzle 12 according to the first embodiment, as described above, the uniformity of the spread of the gas (parallel air flow 100) from the center C side to the peripheral side of the upper surface of the substrate W can be improved by discharging the gas from the first side gas discharge port 72A. As a result, the upper surface of the substrate W can be satisfactorily protected by the gas discharged radially from the first side gas discharge port 72A. Here, when air enters from the side gas discharge port 72 into the corresponding gas flow path 76, oxygen and water vapor may be mixed into the gas discharged from the side gas discharge port 72. The mixing of oxygen and water vapor into the gas discharged from the side gas discharge port 72 may increase the oxygen concentration and humidity in the atmosphere near the upper surface of the substrate.

[0087] In the fluid nozzle 12 according to the first embodiment, another second side gas discharge port 72B is provided at a position farther from the substrate W than the first side gas discharge port 72A. Therefore, similar to the first side gas discharge port 72A, the uniformity of the spread of the gas (parallel air flow 100) discharged from the second side gas discharge port 72B from the center C side to the peripheral side of the upper surface of the substrate W can be improved.

[0088] Since the second side gas discharge port 72B is provided, the entry of air into the first side gas discharge port 72A relatively close to the main surface of the substrate W is suppressed by the gas discharged from the second side gas discharge port 72B relatively far from the upper surface of the substrate W. On the other hand, since no further side gas discharge port 72 is provided at a position farther from the upper surface of the substrate W than the second side gas discharge port 72B, there is no gas flow that suppresses the entry of air into the second side gas discharge port 72B. Therefore, by making the width W2 of the second side gas discharge port 72B in the crossing direction D1 narrower than the width W1 of the first side gas discharge port 72A in the crossing direction D1, the entry of air into the second side gas discharge port 72B can be suppressed. Thereby, an increase in the oxygen concentration and humidity in the atmosphere near the upper surface of the substrate W can be suppressed.

[0089] As a result, the dissolution of oxygen into the low surface tension liquid on the substrate W and the mixing of water into the low surface tension liquid on the substrate W can be suppressed. When water is mixed into the low surface tension liquid, the surface tension acting on the circuit pattern increases. Therefore, the unintended oxidation of the circuit pattern formed on the upper surface of the substrate W and the collapse of the circuit pattern can be suppressed. Further, as described above, since the central gas discharge port 71 is located within the frustum-shaped recess 75c, the gas discharged from the central gas discharge port 71 is likely to spread radially and uniformly. Therefore, the liquid film 110 can be evenly spread to the periphery of the substrate W. Accordingly, the low surface tension liquid (processing liquid) can be satisfactorily removed from the upper surface of the substrate W.

[0090] Next, with reference to FIGS. 13 to 17, first to fourth modified examples of the flow rectifying structure 82 of the fluid nozzle 12 according to the first embodiment will be described. For example, as shown in FIG. 13, the width of the first flow rectifying channel 95 in the circumferential direction CD may become narrower toward the downstream side in the flow path direction (the lower side in the crossing direction D1). Similarly, the width of the second flow rectifying channel 96 in the circumferential direction CD may become narrower toward the downstream side in the flow path direction (the lower side in the crossing direction D1).

[0091] Further, as shown in FIGS. 14 and 15, the first flow rectifying channel 95 may have a cylindrical shape along the flow path direction (crossing direction D1), and the second flow rectifying channel 96 may have a cylindrical shape along the flow path direction (crossing direction D1). In this case, the circumferential ends of the adjacent first shielding portions 90 are connected, and the plurality of first shielding portions 90 as a whole constitute a shielding plate in which a plurality of through holes (first flow rectifying channels 95) are formed. Although not shown, the circumferential ends of the adjacent second shielding portions 91 are connected, and the plurality of second shielding portions 91 as a whole constitute a shielding plate in which a plurality of through holes (second flow rectifying channels 96) are formed.

[0092] Further, as shown in FIG. 16, the first shielding portion 90 may have a straight blade shape that linearly extends in the radial direction RD. Also, as shown in FIG. 17, the first shielding portion 90 may have a curved blade shape that curves such that the outer end in the radial direction RD is located on one side in the circumferential direction CD with respect to the inner end. The second shielding portion 91 may also have a blade shape similar to that of the first shielding portion 90.

[0093] <Second Embodiment> FIG. 18 is a schematic cross-sectional view for explaining a configuration example of a fluid nozzle 12P provided in a processing unit 2 of a substrate processing apparatus 1P according to the second embodiment. FIG. 19 is an enlarged view of the XIX region shown in FIG. 18. In FIGS. 18 and 19, for configurations equivalent to those shown in FIGS. 1 to 17 described above, the same reference numerals as in FIGS. 1 and the like are given and their description is omitted.

[0094] The substrate processing apparatus 1P according to the second embodiment has the same configuration as the substrate processing apparatus 1 according to the first embodiment, except for the fluid nozzle 12P. The main difference between the fluid nozzle 12P according to the second embodiment and the fluid nozzle 12 according to the first embodiment is that the narrow flow path 81 includes a plurality of bent flow paths 86 (see FIG. 19). The narrow flow path 81 of the fluid nozzle 12P includes a linear flow path 85 connecting the downstream end of the gas retention portion 80 and the upstream end of the corresponding lateral gas discharge port 72, and a plurality of bent flow paths 86 (a first bent flow path 86A and a second bent flow path 86B) that bend the middle part of the linear flow path 85. Each bent flow path 86 has an annular shape in plan view that spreads in the horizontal direction.

[0095] The linear flow path 85 is connected to the downstream end of the gas retention portion 80 and the upstream end of the first bent flow path 86A, and includes an upstream linear flow path 87 that linearly extends in the intersection direction D1, the downstream end of the first bent flow path 86A and the upstream end of the second bent flow path 86B, and includes a middle linear flow path 89 that linearly extends in the intersection direction D1, and the downstream end of the second bent flow path 86B and the corresponding lateral gas discharge port 72, and includes a downstream linear flow path 88 that linearly extends in the intersection direction D1. The upstream linear flow path 87, the middle linear flow path 89, and the downstream linear flow path 88 each have a cylindrical shape extending in the intersection direction D1.

[0096] In the second embodiment, the plurality of first shielding portions 90 of the flow rectifying structure 82 are provided in the middle linear flow path 89, and the plurality of second shielding portions 91 are provided in the downstream linear flow path 88. According to the second embodiment, the same effects as those of the first embodiment are achieved. According to the second embodiment, further, a plurality of bent flow paths 86 are provided. Therefore, compared with the configuration in which the bent flow path 86 is single, the flow velocity of the gas is reduced, and the flow velocity difference of the gas in the circumferential direction CD can be further reduced. Therefore, the uniformity of the spread of the gas discharged from the corresponding side gas discharge port 72 and flowing from the center C side to the peripheral side of the upper surface of the substrate W can be improved.

[0097] <Third Embodiment> FIG. 20 is a schematic cross-sectional view for explaining a configuration example of the fluid nozzle 12Q provided in the processing unit 2 of the substrate processing apparatus 1Q according to the third embodiment. FIG. 21 is an enlarged view of the XXI region shown in FIG. 20. In FIGS. 20 and 21, for the configurations equivalent to those shown in FIGS. 1 to 18 described above, the same reference numerals as those in FIG. 1 and the like are given and the description thereof is omitted.

[0098] The substrate processing apparatus 1Q according to the third embodiment has the same configuration as the substrate processing apparatus 1 according to the first embodiment except for the fluid nozzle 12Q. The main difference between the fluid nozzle 12Q according to the third embodiment and the fluid nozzle 12P according to the second embodiment is that the narrow flow path 81 is connected to a position closer to the radially outer end than the radially inner end of the gas retention portion 80. In the fluid nozzle 12Q, a plurality of bent flow paths 86 are provided in the same manner as the fluid nozzle 12P of the second embodiment. However, different from the fluid nozzle 12P of the second embodiment, the middle straight flow path 89 is located radially inward of the upstream straight flow path 87 and the downstream straight flow path 88.

[0099] According to the third embodiment, the same effects as those of the second embodiment are achieved. <Fourth Embodiment> FIG. 22 is a schematic cross-sectional view for explaining a configuration example of the fluid nozzle 12R provided in the processing unit 2 of the substrate processing apparatus 1R according to the fourth embodiment. FIG. 23 is an enlarged view of the XXIII region shown in FIG. 22. In FIGS. 22 and 23, for the configurations equivalent to those shown in FIGS. 1 to 21 described above, the same reference numerals as those in FIG. 1 and the like are given and the description thereof is omitted.

[0100] The substrate processing apparatus 1R according to the fourth embodiment has the same configuration as the substrate processing apparatus 1 according to the first embodiment, except for the fluid nozzle 12R. The main difference between the fluid nozzle 12R according to the fourth embodiment and the fluid nozzle 12 according to the first embodiment is that the rectifying structure 82 is provided in the bent flow path 86. Specifically, a plurality of first shielding portions 90 that form part of the rectifying structure 82 are provided in the bent flow path 86. Therefore, naturally, a plurality of first rectifying flow paths 95 are also provided in the middle part of the bent flow path 86.

[0101] <Other Embodiments> The present invention is not limited to the embodiments described above, and can be implemented in other forms. For example, in the second to fourth embodiments, each modification example (FIGS. 13 to 17) of the first embodiment can also be applied. It is also possible to combine the respective embodiments. For example, in the fluid nozzle 12P of the second embodiment or the fluid nozzle 12Q of the third embodiment, the rectifying structure 82 may be provided in the bent flow path 86 in the same manner as in the fourth embodiment. In the case of the fluid nozzle 12P or the fluid nozzle 12Q, a plurality of first shielding portions 90 and a plurality of second shielding portions 91 can be provided in the plurality of bent flow paths 86, respectively.

[0102] In each of the above-described embodiments, the nozzle body 75 is constituted by a single member, and a gas flow path 76 is formed inside thereof. However, different from each of the above-described embodiments, the nozzle body 75 may be constituted by a plurality of members. Specifically, the nozzle body 75 may include a plurality of flow path partitioning members each having a surface that partitions the gas flow path 76. If so, the formation of the gas flow path 76 is easier compared to the configuration in which the gas flow path 76 is formed inside a single member.

[0103] In the above-described embodiments, the substrate processing apparatus 1 includes transfer robots IR and CR, a plurality of processing units 2, and a controller 3. However, the substrate processing apparatuses 1 and 1P may be configured by a single processing unit 2 and a controller 3 and may not include the transfer robots IR and CR. Alternatively, the substrate processing apparatus 1 may be configured by only a single processing unit 2. In other words, the processing unit 2 may be an example of the substrate processing apparatus.

[0104] In the above-described embodiments, the fluid nozzles 12, 12P, 12Q, and 12R face the upper surface of the substrate W. However, unlike the above-described embodiments, the fluid nozzles 12, 12P, 12Q, and 12R may be configured to face the lower surface of the substrate W. In each of the above-described embodiments, as shown in FIG. 6, the circumferential phases of the plurality of first rectifying channels 95 of the first gas channel 76A and the circumferential phases of the plurality of first rectifying channels 95 of the second gas channel 76B substantially overlap. As shown in FIG. 7, the circumferential phase of the second rectifying channel 96 of the first gas channel 76A and the circumferential phase of the second rectifying channel 96 of the second gas channel 76B substantially overlap. However, unlike the examples shown in FIGS. 6 and 7, the circumferential phase of the first rectifying channel 95 of the first gas channel 76A may be different from the circumferential phase of the first rectifying channel 95 of the second gas channel 76B, or the circumferential phase of the second rectifying channel 96 of the first gas channel 76A may be different from the circumferential phase of the second rectifying channel 96 of the second gas channel 76B.

[0105] In each of the above-described embodiments, as shown in FIG. 6, the circumferential phases of the plurality of first rectifying channels 95 of the first gas channel 76A and the circumferential phases of the plurality of first rectifying channels 95 of the second gas channel 76B substantially overlap. As shown in FIG. 7, the circumferential phase of the second rectifying channel 96 of the first gas channel 76A and the circumferential phase of the second rectifying channel 96 of the second gas channel 76B substantially overlap. However, unlike the examples shown in FIGS. 6 and 7, the circumferential phase of the first rectifying channel 95 of the first gas channel 76A may be different from the circumferential phase of the first rectifying channel 95 of the second gas channel 76B, or the circumferential phase of the second rectifying channel 96 of the first gas channel 76A may be different from the circumferential phase of the second rectifying channel 96 of the second gas channel 76B.

[0106] Also, in each of the above-described embodiments, as shown in FIG. 8, in each gas flow path 76, the circumferential phase of the plurality of first rectifying flow paths 95 is different from the circumferential phase of the plurality of second rectifying flow paths 96. However, unlike the example shown in FIG. 8, the circumferential phases of the plurality of first rectifying flow paths 95 and the circumferential phases of the plurality of second rectifying flow paths 96 may overlap. In each of the above-described embodiments, as shown in FIG. 4, the width W2 of the second lateral gas discharge port 72B is narrower than the width W1 of the first lateral gas discharge port 72A. However, unlike the example shown in FIG. 4, as shown in FIG. 24, the width W2 of the second lateral gas discharge port 72B may be wider than the width W1 of the first lateral gas discharge port 72A.

[0107] When the flow rate of the gas discharged from the central gas discharge port 71 is relatively low (for example, when it is 5 L / min or more and 15 L / min or less), the air pressure near the upper surface of the substrate W tends to decrease. When the air pressure near the upper surface of the substrate W is relatively low, the gas discharged from the first lateral gas discharge port 72A, which is relatively close to the upper surface of the substrate W, is attracted to the upper surface side of the substrate W, and the uniformity of the spread of the gas discharged from the first lateral gas discharge port 72A may decrease.

[0108] Therefore, by making the width W1 of the first lateral gas discharge port 72A narrower than the width W2 of the second lateral gas discharge port 72B, if the linear velocity of the gas discharged from the first lateral gas discharge port 72A is increased, it is possible to suppress the gas discharged from the first lateral gas discharge port 72A from being attracted to the upper surface of the substrate W. Thereby, the uniformity of the gas discharged from the first lateral gas discharge port 72A can be improved. As a result, the uniformity of the spread of the gas discharged from the plurality of lateral gas discharge ports 72 and flowing from the center side to the peripheral side of the upper surface of the substrate W can be improved.

[0109] When the flow rate of the gas discharged from the central gas discharge port 71 is relatively large (for example, when it is about 50 L / min), a configuration in which the width W2 of the second lateral gas discharge port 72B is narrower than the width W1 of the first lateral gas discharge port 72A, as in each of the above-described embodiments, is preferable. The configuration shown in FIG. 24, that is, the configuration in which the width W2 of the second side gas discharge port 72B is wider than the width W1 of the first side gas discharge port 72A, can be applied to each of the above-described embodiments. Further, unlike FIGS. 4 and 24, the width W2 of the second side gas discharge port 72B and the width W1 of the first side gas discharge port 72A may be the same.

[0110] In the above-described substrate processing apparatuses 1, 1P, 1Q, and 1R, the heater unit 6 is provided. However, the heater unit 6 does not necessarily have to be provided, and it is also possible to heat the substrate W by means other than the heater unit 6. Further, there may not be provided means for heating the substrate W in the first place. In the above-described low surface tension liquid treatment in substrate processing (see FIGS. 12A to 12C), the substrate W is heated by the heater unit 6, and the low surface tension liquid is removed from the substrate W in a state where a gas phase layer is formed between the liquid film 110 and the substrate W. However, the low surface tension liquid treatment may be a treatment for removing the liquid film 110 from the substrate W without forming a gas phase layer. The fluid nozzle 12 can also be applied to a low surface tension liquid treatment for removing the low surface tension liquid from the substrate W by at least any one of the action of convection generated in the liquid film 110 by heating, the blowing force of gas, and the centrifugal force of rotation of the substrate W without forming a gas phase layer.

[0111] In the above-described embodiments, expressions such as "along", "horizontal", "orthogonal", and "vertical" are used, but it is not necessary to be strictly "along", "horizontal", "orthogonal", or "vertical". That is, each of these expressions allows for deviations in manufacturing accuracy, installation accuracy, etc. From this specification and the attached drawings, features other than those described in the claims can also be extracted as follows. These features can be arbitrarily combined with the features described in the section of means for solving the problems.

[0112] (Appendix 1-1) A nozzle body having a bottom surface and side surfaces connected to the bottom surface, A cylindrical gas flow path formed inside the nozzle body, It includes an annular gas discharge port that opens from the side surface of the nozzle body and discharges gas radially outward from the side surface. The gas flow path has a gas retention portion with a larger flow path cross-sectional area than other locations in the gas flow path, and a rectifying structure provided in a portion different from the gas retention portion in the gas flow path to rectify the flow of gas in the gas flow path, a fluid nozzle.

[0113] According to Supplementary Note 1-1, since the gas flow path is provided with a gas retention portion having a larger flow path cross-sectional area than other locations in the gas flow path, the gas supplied to the gas retention portion is dispersed within the gas retention portion. Therefore, the flow velocity of the gas supplied to the gas retention portion is reduced, and the flow velocity difference of the gas at each position in the circumferential direction of the gas flow path is reduced. Furthermore, the gas in the gas flow path is rectified by the rectifying structure provided in a portion different from the gas retention portion in the gas flow path. As a result, the direction in which the gas moves in the gas flow path is aligned along the direction of the gas flow path. Therefore, the uniformity of the radial spread of the gas discharged from the gas discharge port can be improved. Therefore, for example, by facing the bottom surface of the nozzle body to the main surface of the substrate and discharging gas from the gas discharge port, the main surface of the substrate can be protected.

[0114] (Supplementary Note 1-2) The fluid nozzle includes a plurality of the gas discharge ports and a plurality of the gas flow paths that guide gas to the plurality of the gas discharge ports respectively. The fluid nozzle according to Supplementary Note 1-1, wherein the plurality of the gas discharge ports include an annular first gas discharge port and an annular second gas discharge port provided at a position farther from the bottom surface than the first gas discharge port.

[0115] According to Supplementary Note 1-2, in addition to the first gas discharge port, gas is also discharged from the second gas discharge port provided at a position farther from the bottom surface of the nozzle body than the first gas discharge port. Therefore, the layer of gas spreading radially can be thickened. (Supplementary Note 1-3) The fluid nozzle according to Supplementary Note 1-2, wherein the width of the second gas discharge port is narrower than the width of the first gas discharge port.

[0116] Since a gas discharge port (second gas discharge port) is provided at a position farther from the bottom surface of the nozzle body than the gas discharge port (first gas discharge port), the entry of air into the gas discharge port (first gas discharge port) relatively close to the bottom surface of the nozzle body is suppressed by the gas discharged from the gas discharge port (second gas discharge port) relatively far from the bottom surface of the nozzle body. On the other hand, since no further gas discharge port is provided at a position farther from the bottom surface of the nozzle body than the second gas discharge port, there is no gas flow that suppresses the entry of air into the second gas discharge port. Therefore, by making the width of the annular second gas discharge port narrower than the width of the annular first gas discharge port, the entry of air into the second gas discharge port can be suppressed. Therefore, for example, when the bottom surface of the nozzle body faces the main surface of the substrate, an increase in the oxygen concentration in the atmosphere near the main surface of the substrate can be suppressed, and the upper surface of the substrate can be better protected.

[0117] (Appendix 1-4) The fluid nozzle according to Appendix 1-2, wherein the width of the second gas discharge port is wider than the width of the first gas discharge port. According to Appendix 1-4, the linear velocity of the gas discharged from the first gas discharge port becomes higher. Therefore, for example, when the bottom surface of the nozzle body faces the main surface of the substrate, it is possible to suppress the gas discharged from the first gas discharge port from being attracted to the main surface of the substrate. Thereby, the uniformity of the spread of the gas discharged from the gas discharge port and moving from the center side to the peripheral side of the main surface of the substrate can be improved.

[0118] (Appendix 1-5) The fluid nozzle according to any one of Appendix 1-1 to Appendix 1-4, wherein the rectifying structure has a plurality of first shielding portions provided at intervals in the circumferential direction of the gas flow path and shielding the movement of the gas to the downstream side of the gas flow path. According to Supplementary Note 1-5, the movement of gas to the downstream side of the gas flow path is blocked by a plurality of first shielding portions provided at intervals in the circumferential direction. Therefore, when passing between two adjacent first shielding portions in the circumferential direction, the circumferential component of the gas flow velocity is reduced. As a result, the discharge direction of the gas discharged from the gas discharge port can be made closer to the radial direction of the gas flow path, so that the uniformity of the spread of the gas discharged from the gas discharge port can be further improved.

[0119] (Supplementary Note 1-6) The rectifying structure further includes a plurality of second shielding portions provided on the downstream side of the gas flow path with respect to the plurality of first shielding portions and blocking the movement of gas to the downstream side of the gas flow path. The fluid nozzle according to Supplementary Note 1-5, wherein positions of the plurality of second shielding portions in the circumferential direction are shifted from positions of the plurality of first shielding portions in the circumferential direction.

[0120] While the circumferential component of the gas flow velocity passing between two adjacent first shielding portions in the circumferential direction is reduced by the plurality of first shielding portions, on the downstream side of the plurality of first shielding portions in the gas flow path, the flow rate of the gas flowing at the same circumferential position as the first shielding portion is reduced. Therefore, if the circumferential positions of the plurality of second shielding portions that block the movement of gas to the downstream side of the gas flow path are shifted from the circumferential positions of the plurality of first shielding portions on the downstream side of the plurality of first shielding portions, the flow rate of the gas flowing at the same circumferential position as the second shielding portion can be reduced, thereby improving the uniformity of the gas flow rate at each position in the circumferential direction. As a result, the uniformity of the spread of the gas discharged from the gas discharge port can be further improved.

[0121] Furthermore, the circumferential component of the gas velocity can be reduced by a plurality of second shielding portions in addition to the plurality of first shielding portions. That is, the circumferential component of the gas velocity can be reduced in two steps. As a result, the discharge direction of the gas discharged from the gas discharge port can be made even closer to the radial direction of the gas flow path. (Supplementary Note 1-7) The fluid nozzle according to any one of Supplementary Notes 1-1 to 1-6, further comprising a linear flow path that extends linearly in a direction intersecting the circumferential direction of the gas flow path, and a bent flow path that bends a middle portion of the linear flow path. According to Supplementary Note 1-6, by bending at the middle portion of the linear flow path, the flow velocity of the gas is reduced, and the flow velocity difference of the gas at each position in the circumferential direction of the gas flow path is reduced.

[0122] (Supplementary Note 1-8) The fluid nozzle further includes a central gas discharge port that discharges gas toward the center of the main surface of the substrate. A frustum-shaped recess is formed on the bottom surface of the fluid nozzle. The fluid nozzle according to any one of Supplementary Notes 1-1 to 1-7, wherein the central gas discharge port is located within the recess.

[0123] According to Supplementary Note 1-8, the central gas discharge port is arranged within the frustum-shaped recess. Therefore, for example, when the bottom surface of the nozzle body faces the main surface of the substrate, by discharging gas from the central gas discharge port with the bottom surface of the nozzle body facing the main surface of the substrate, the gas supplied to the center of the main surface of the substrate spreads within the recess and then moves toward the peripheral side of the substrate. Since the recess is formed in a frustum shape, gas can be evenly spread from the entire periphery of the recess to the outside of the recess. The uniformity of the spread of the gas discharged from the gas discharge port can be improved.

[0124] (Supplementary Note 1-9) The fluid nozzle according to Supplementary Note 1-7, further including a processing liquid discharge port that is located within the recess and discharges the processing liquid toward the main surface of the substrate. Therefore, for example, when the bottom surface of the nozzle body faces the main surface of the substrate, by discharging the processing liquid from the processing liquid discharge port to the main surface of the substrate while discharging gas from the gas discharge port that opens on the side surface of the fluid nozzle, the processing liquid on the main surface of the substrate can be protected from the external atmosphere. For example, it is possible to suppress oxygen contained in the external atmosphere from dissolving in the processing liquid on the main surface of the substrate.

[0125] Furthermore, by discharging gas from the central gas discharge port to push the processing liquid away from the periphery of the substrate, it can be excluded from the periphery of the substrate. Since the gas discharged from the central gas discharge port spreads uniformly from the entire periphery of the recess to the outside of the recess, the processing liquid can be satisfactorily removed from the main surface of the substrate. (Appendix 1-10) The fluid nozzle according to any one of Appendices 1-1 to 1-9, further including a gas inlet for allowing gas to flow into the gas flow path from the circumferential direction of the gas flow path.

[0126] Therefore, the gas supplied to the gas flow path from the circumferential direction of the gas flow path swirls in the circumferential direction within the gas flow path. Since a rectifying structure is provided in a portion different from the gas retention portion in the gas flow path, the gas in the gas flow path is rectified. Thereby, the uniformity of the spread of the gas discharged from the gas discharge port can be improved. In addition, various modifications can be made within the scope described in the claims.

Explanation of Reference Numerals

[0127] 1: Substrate processing apparatus 1P: Substrate processing apparatus 1Q: Substrate processing apparatus 1R: Substrate processing apparatus 2: Processing unit (substrate processing apparatus) 5: Spin chuck 12: Fluid nozzle 12P: Fluid nozzle 12Q: Fluid nozzle 12R: Fluid nozzle 45: Gas pipe 70: Low surface tension liquid discharge port 71: Central gas discharge port 72: Side gas discharge port (gas discharge port) 72A: First side gas discharge port (first gas discharge port) 72B: Second side gas discharge port (second gas discharge port) 75: Nozzle body 75a: Bottom surface (opposing surface, lower surface) 75b: Side surface 76: Gas flow path 80: Gas retention part 82: Flow rectifying structure 90: First shielding part 91: Second shielding part C: Center CD: Circumferential direction D1: Cross direction RD: Radial direction W: Substrate W1: Width of the first gas outlet W2: Width of the second gas outlet

Claims

1. a spin chuck for holding the substrate; a fluid nozzle disposed opposite a major surface of the substrate held by the spin chuck; the fluid nozzle includes a gas discharge port that discharges gas radially from a center side toward a peripheral side of a main surface of the substrate, and a gas flow path that supplies gas to the gas discharge port, the gas flow path having a cylindrical shape along a direction intersecting the main surface of the substrate, the gas flow path has a gas retention portion having a flow path cross-sectional area larger than other portions in the gas flow path, a straightening structure provided in a portion of the gas flow path different from the gas retention portion and straightening a flow of gas in the gas flow path, a straight flow path extending linearly in the intersecting direction, and a bent flow path bending a middle portion of the straight flow path, The substrate processing apparatus, wherein the curved flow path has a flow path that is annular in a plan view and extends in a horizontal direction.

2. the fluid nozzle includes a plurality of the gas ejection ports and a plurality of the gas flow paths that supply gas to the plurality of the gas ejection ports, respectively; 2 . The substrate processing apparatus according to claim 1 , wherein the plurality of gas discharge ports include a first gas discharge port and a second gas discharge port provided at a position farther from the main surface of the substrate in the intersecting direction than the first gas discharge port.

3. The substrate processing apparatus according to claim 1 , wherein the gas flow path includes a plurality of the bent flow paths.

4. a substrate holding step of holding a substrate; a processing liquid supplying step of supplying a processing liquid onto the upper surface of the substrate; a fluid nozzle having a gas outlet for discharging gas, and a gas flow path for supplying gas to the gas outlet, the gas flow path being provided with a gas stagnation section having a flow path cross-sectional area larger than other portions in the gas flow path, a straightening structure provided in a portion of the gas flow path different from the gas stagnation section for straightening the flow of gas in the gas flow path, a straight flow path extending linearly in a cross-sectional direction in the gas flow path, and a bent flow path for bending a middle portion of the straight flow path, the bent flow path being a circular flow path in a plan view extending horizontally, and an air flow forming process for discharging gas from the gas outlet of the fluid nozzle, at least after start of the processing liquid supply process, to form a radial air flow from the center side to the periphery side of the upper surface of the substrate.

5. the fluid nozzle includes a plurality of the gas ejection ports and a plurality of the gas flow paths that supply gas to the plurality of the gas ejection ports, respectively; 5. The substrate processing method according to claim 4, wherein the plurality of gas outlets include a first gas outlet and a second gas outlet provided at a position farther from the main surface of the substrate in the intersecting direction than the first gas outlet.

6. The substrate processing method according to claim 4 , wherein the gas flow path includes a plurality of the bent flow paths.

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