Semiconductor device

Abstract

To provide a semiconductor device which receives or collects oblique light.SOLUTION: A semiconductor device includes: a substrate having photoelectric conversion elements; a first light-shielding layer disposed on the substrate and having first apertures corresponding to the photoelectric conversion elements; a light-adjusting structure disposed on the first light-shielding layer; a second light-shielding layer disposed on the light-adjusting structure and having second apertures corresponding to the first apertures; first light-condensing structures disposed on the second light-shielding layer and covering the second apertures; a third light-shielding layer disposed on the first light-condensing structure and having third apertures corresponding to the second apertures; second light-condensing structures disposed on the third light-shielding layer and covering the third apertures; and a first light-transmitting layer disposed between the second light-shielding layer and the third light-shielding layer, where a refractive index of the first light-condensing structure and a refractive index of the first light-transmitting layer are different.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device that receives or condenses oblique light.

Background Art

[0002] Semiconductor devices can be used in various applications. For example, in recent years, semiconductor devices equipped with photoelectric conversion elements have been widely used as biometric authentication devices such as fingerprint authentication devices, face authentication devices, and iris authentication. Biometric authentication devices authenticate a person using unique physical characteristics of the person (e.g., fingerprint, face, iris, etc.) and are typically used in portable devices (e.g., mobile phones, tablets, laptop computers, etc.). This application of biometric authentication devices is safe and convenient for users.

[0003] However, existing biometric authentication devices are not satisfactory in every aspect. For example, a biometric authentication device used for fingerprint authentication on the screen of a mobile phone or tablet needs to sense and condense oblique incident light, but oblique incident light with a large incident angle (e.g., 50 degrees or more) causes coma aberration, and as a result, the quality of the image signal from the photoelectric conversion element of the biometric authentication device deteriorates.

Summary of the Invention

Problems to be Solved by the Invention

[0004] To provide a semiconductor device that receives or condenses oblique light.

Means for Solving the Problems

[0005] In some embodiments of the present disclosure, the semiconductor device includes at least two light condensing structures and one light transmission layer between the two light condensing structures, and since the refractive index of the lower light condensing structure is different from the refractive index of the light transmission layer, coma aberration can be effectively reduced, and as a result, the quality of the image signal from the photoelectric conversion element of the semiconductor device is improved.

[0006] Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a substrate having a photoelectric conversion element. The semiconductor device also includes a first light-shielding layer disposed on the substrate and having a first opening corresponding to the photoelectric conversion element. The semiconductor device further includes a light adjustment structure disposed on the first light-shielding layer. Additionally, the semiconductor device includes a second light-shielding layer disposed on the light adjustment structure and having a second opening corresponding to the first opening. The semiconductor device also includes a first light condensing structure disposed on the second light-shielding layer and covering the second opening. The semiconductor device further includes a third light-shielding layer disposed on the first light condensing structure and having a third opening corresponding to the second opening. Also, the semiconductor device includes a second light condensing structure disposed on the third light-shielding layer and covering the third opening. The semiconductor device further includes a first light transmission layer disposed between the second light-shielding layer and the third light-shielding layer. The refractive index of the first light condensing structure and the refractive index of the first light transmission layer are different.

[0007] In some embodiments, the refractive index of the first light condensing structure is higher than the refractive index of the first light transmission layer.

[0008] In some embodiments, the first light condensing structure is a convex microlens.

[0009] In some embodiments, the refractive index of the first light condensing structure is between 1.5 and 2.5.

[0010] In some embodiments, the refractive index of the first light condensing structure is lower than the refractive index of the first light transmission layer.

[0011] In some embodiments, the first light condensing structure is a concave microlens.

[0012] In some embodiments, the refractive index of the first light condensing structure is between 1.0 and 1.5.

[0013] In some embodiments, the central axis of the first light condensing structure is separated from the central axis of the second light condensing structure.

[0014] In some embodiments, the photoelectric conversion element corresponds to one first light condensing structure and one second light condensing structure.

[0015] In some embodiments, the first light condensing structure covers one second opening.

[0016] In some embodiments, the central axis of the first light condensing structure overlaps with the central axis of the corresponding second light condensing structure.

[0017] In some embodiments, the first light condensing structure covers at least two second openings.

[0018] In some embodiments, the first light condensing structure corresponds to one third opening.

[0019] In some embodiments, the diameter of the first light condensing structure is larger than the diameter of the second light condensing structure.

[0020] In some embodiments, the semiconductor device further includes a second light transmission layer disposed between the light adjustment structure and the second light shielding layer.

[0021] In some embodiments, the refractive index of the first light condensing structure and the refractive index of the second light condensing structure are different.

[0022] In some embodiments, the first light transmission layer is in direct contact with the second light shielding layer, the first light condensing structure, the third light shielding layer, and the second light condensing structure.

[0023] In some embodiments, the light adjustment structure is an infrared cut-off filter.

[0024] In some embodiments, the first light condensing structure and the second light condensing structure have a spherical shape, an aspherical shape, or a free-form surface.

[0025] In some embodiments, the photoelectric conversion element is used to sense incident light, and the incident light has an incident angle in the range of 1 degree to 80 degrees.

Advantages of the Invention

[0026] According to the present invention, the quality of an image signal from a photoelectric conversion element of a semiconductor device can be improved.

Brief Description of the Drawings

[0027]

Figure 1

Figure 2

Figure 3

Figure 4

Modes for Carrying Out the Invention

[0028] In the following disclosure, many different embodiments or examples are provided to implement different features of the present disclosure. To briefly describe the present disclosure, a plurality of specific examples of a plurality of configurations and arrangements are described. These are of course merely for illustration and are not intended to be limiting. For example, in the first feature, forming on top of the second feature of the following disclosure can include a plurality of embodiments in which the first and second features are formed in direct contact, and can also include a plurality of embodiments in which additional features are formed between the first and second features so that the first and second features are not in direct contact.

[0029] Additional steps can be implemented before, during, or after the illustrated method, and in other embodiments of the illustrated method, some steps may be replaced or omitted.

[0030] Furthermore (in the following detailed description), spatially relative terms, such as "lower," "below," "bottom," "upper," "above," "top," and words similar thereto, are used for the purpose of briefly describing the relationship between one element or feature and another (other) element(s) and (other) feature(s) in the figures. Spatially relative terms are intended to encompass different directions of the device being used or operated in addition to the directions depicted in the figures. The device may be oriented in other directions (rotated 90 degrees or otherwise), and the spatially relative descriptions used herein may be interpreted accordingly.

[0031] Unless otherwise defined, all terms (including technical and scientific terms) used herein shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Further, terms as defined in commonly used dictionaries shall be interpreted to have a meaning that coincides with the meaning in the context of the relevant art and shall not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0032] The present disclosure may potentially repeatedly use the same reference numerals or characters for the same components in the following examples. The purpose of the repeated use is to provide a simplified and clear description and is not intended to limit the relationship of the multiple embodiments and / or arrangements described below.

[0033] The semiconductor device of an embodiment of the present disclosure can be used as a biometric authentication device such as a fingerprint authentication device, but the present disclosure is not limited thereto. The semiconductor device shown in the embodiments of the present disclosure can also be applied to other appropriate devices according to requirements.

[0034] FIG. 1 is a partial cross-sectional view showing a semiconductor device 100 according to an embodiment of the present disclosure. For the sake of simplicity, some components of the semiconductor device 100 are omitted in FIG. 1.

[0035] As shown in FIG. 1, the semiconductor device 100 has a substrate 10. For example, the material of the substrate 10 can be an elemental semiconductor (e.g., silicon, germanium), a compound semiconductor (e.g., tantalum carbide (TaC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP)), an alloy semiconductor (e.g., silicon germanium (SiGe), silicon germanium carbide (SiGeC), gallium arsenide phosphide (GaAsP), or gallium indium phosphide (GaInP)), any other semiconductor, or a combination thereof.

[0036] In some embodiments, the substrate 10 can be an insulator - on - silicon (SOI) substrate. For example, the substrate 10 can be a silicon - on - insulator substrate or a germanium - on - insulator substrate, but the present disclosure is not limited thereto. In some embodiments, the substrate 10 can be a semiconductor wafer (e.g., a silicon wafer, or any other applicable semiconductor wafer). In some embodiments, the substrate 10 can use various conductive configurations (e.g., conductive lines or vias). For example, the conductive configuration can use aluminum (Al), copper (Cu), tungsten (W), their alloys, other applicable conductive materials, or a combination thereof, but the present disclosure is not limited thereto.

[0037] As shown in FIG. 1, the substrate 10 has a plurality of photoelectric conversion elements 11. For example, the photoelectric conversion elements 11 are formed by an ion implantation process and / or a diffusion process, etc. Also, the photoelectric conversion elements 11 can be configured to form transistors, photodiodes, PIN diodes, and / or light - emitting diodes, but the present disclosure is not limited thereto. In some embodiments, the photoelectric conversion elements 11 form an array structure.

[0038] As shown in FIG. 1, in some embodiments, the semiconductor device 100 has a first light-shielding layer 21 disposed on the substrate 10. As shown in FIG. 1, the first light-shielding layer 21 is deposited on the substrate 10 and can be in direct contact with the substrate 10, but the present disclosure is not limited thereto. In some embodiments, the first light-shielding layer 21 has a first opening 21H corresponding to the photoelectric conversion element 11. In other words, the first opening 21H is provided at a position where the incident light L passes through the condensing structure 41 or the like and is condensed onto the photoelectric conversion element 11. For example, the first light-shielding layer 21 can include metals such as tungsten (W), copper (Cu), silver (Ag), etc., but the present disclosure is not limited thereto. Also, the first light-shielding layer 21 can use photoresist (e.g., black photoresist, or other applicable non-transparent photoresist), ink (e.g., black ink, or other applicable non-transparent ink), molding compound (e.g., black molding compound, or other applicable non-transparent molding compound), solder mask (e.g., black solder mask, or other applicable non-transparent solder mask), (black) epoxy resin, any other applicable material, or a combination thereof. In some embodiments, the first light-shielding layer 21 includes a photocurable material, a thermosetting material, or a combination thereof.

[0039] The above materials may be deposited on the substrate 10 by a deposition process such as physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), or a combination thereof, but the present disclosure is not limited thereto. Next, as shown in FIG. 1, a patterning process is performed to pattern the material to form the first light-shielding layer 21 (having the first opening 21H). More specifically, a part of the material is removed in the patterning process to form the first opening 21H. The patterning process can use soft bake, mask alignment, exposure, post-exposure bake, development, rinse, drying, any other applicable process, or a combination thereof, but the present disclosure is not limited thereto.

[0040] As shown in FIG. 1, in some embodiments, the semiconductor device 100 includes a light adjustment structure 30 disposed on the first light-shielding layer 21. In some embodiments, the light adjustment structure 30 is an infrared (IR) cut-off filter having a multi-film structure. For example, the light adjustment structure 30 can cut infrared light of a specific wavelength (e.g., about 700 nm to about 1100 nm) and allow visible light of a specific wavelength (e.g., about 400 nm to about 700 nm) to pass through, but the present disclosure is not limited thereto. The light adjustment structure 30 may be formed by a deposition process. Examples of the deposition process are as described above and will not be repeated here, but the present disclosure is not limited thereto.

[0041] As shown in FIG. 1, in some embodiments, the semiconductor device 100 includes a second light-shielding layer 23 disposed on the light adjustment structure 30. Similarly, in some embodiments, the second light-shielding layer 23 has a second opening 23H corresponding to the first opening 21H. For example, the second light-shielding layer 23 and the first light-shielding layer 21 may include similar or the same materials, but the present disclosure is not limited thereto. Also, the aforementioned materials can be deposited on the light adjustment structure 30 by a deposition process and then, as shown in FIG. 1, a patterning process is performed to pattern the materials to form the second light-shielding layer 23 (having the second opening 23H), but the present disclosure is not limited thereto. Note that the positions of the first opening 21H and the second opening 23H may have a positional relationship as shown by the dotted line in FIG. 1. That is, the first opening 21H and the second opening 23H may be positioned on the optical path of the incident light L so that the incident light L incident from the second light condensing structure is condensed on the photoelectric conversion element 11, and the positional relationship between the first opening 21H and the second opening 23H may be corresponding. In the following description, "corresponding" may be "being positioned on the optical path of the incident light L", or may be "a positional relationship such that the photoelectric conversion element 11 can sense the incident light L according to the incident angle within a predetermined range".

[0042] As shown in FIG. 1, in some embodiments, the semiconductor device 100 includes a first light condensing structure 41 disposed on the second light shielding layer 23. For example, the first light condensing structure 41 may include a transparent material such as glass, epoxy resin, silicone resin, polyurethane, any other applicable material, or a combination thereof, but the present disclosure is not limited thereto. The first light condensing structure 41 may be formed by a photoresist reflow method, a hot embossing method, any other applicable method, or a combination thereof. Further, the step of forming the first light condensing structure 41 may include a spin coating process, a lithography process, an etching process, any other applicable process, or a combination thereof, but the present disclosure is not limited thereto.

[0043] In some embodiments, the first light condensing structure 41 is a convex microlens corresponding to the second opening 23H. As shown in FIG. 1, in some embodiments, the first light condensing structure 41 covers the second opening 23H. It should be noted that the central axis C1 of each first light condensing structure 41 may be separated from the center of the corresponding second opening 23H as shown in FIG. 1, but the present disclosure is not limited thereto. The central axis C1 is an axis along the vertical direction with respect to the substrate 10 and the laminated surface (surface) such as the first light shielding layer 21. And the central axis C1 of each first light condensing structure 41 is away from the center of the corresponding second opening 23H in the direction along the laminated surface (surface) of the second light shielding layer 23 as shown in FIG. 1.

[0044] As shown in FIG. 1, in some embodiments, the semiconductor device 100 includes a first light transmissive layer 51 disposed on the second light shielding layer 23. In particular, the first light transmissive layer 51 is deposited on and in direct contact with the second light shielding layer 23 and the first light condensing structure 41. In some embodiments, the refractive index of each first light condensing structure 41 is higher than the refractive index of the first light transmissive layer 51. In some embodiments, the refractive index of each first light condensing structure 41 is between about 1.5 and about 2.5 (for example, 1.7), and the refractive index of the first light transmissive layer 51 is between about 1.4 and about 1.6 (for example, 1.5).

[0045] The material of the light transmission layer 51 may include, but is not limited to, transparent photoresist, polyimide, epoxy resin, any other applicable material, or a combination thereof. For example, a spin-on coating process may be performed to coat the aforementioned materials on the second light-shielding layer 23 and the first light condensing structure 41 to form the first light transmission layer 51, but the present disclosure is not limited thereto.

[0046] As shown in FIG. 1, in some embodiments, the semiconductor device 100 includes a third light-shielding layer 25 disposed on the first light transmission layer 51 and the first light condensing structure 41. That is, the first light transmission layer 51 is disposed between the second light-shielding layer 23 and the third light-shielding layer 25.

[0047] Similarly, in some embodiments, the third light-shielding layer 25 has a third opening 25H corresponding to the second opening 23H. For example, the third light-shielding layer 25, the first light-shielding layer 21, and the second light-shielding layer 23 may include similar or the same materials, but the present disclosure is not limited thereto. Also, the aforementioned materials may be deposited on the first light transmission layer 51 by a deposition process, and then, as shown in FIG. 1, a patterning process may be performed to pattern the materials to form the third light-shielding layer 25 (having the third opening 25H), but the present disclosure is not limited thereto.

[0048] As shown in FIG. 1, in some embodiments, the semiconductor device 100 includes a second light condensing structure 43 disposed on the third light-shielding layer 25. In some embodiments, the second light condensing structure 43 includes a transparent material, but is different from the first light condensing structure 41. That is, the refractive index of each first light condensing structure 41 is different from the refractive index of each second light condensing structure 43. For example, the refractive index of each second light condensing structure 43 may be between about 1.2 and about 1.5 (e.g., 1.4), but the present disclosure is not limited thereto. The second light condensing structure 43 can be formed by a similar method or process for forming the first light condensing structure 41, but the present disclosure is not limited thereto.

[0049] In some embodiments, the second condensing structure 43 is a convex microlens corresponding to the second opening 25H. As shown in FIG. 1, in some embodiments, the second condensing structure 43 covers the third opening 25H. Also, the third opening 25H can be filled with the second condensing structure 43. It should be noted that the central axis C3 of each second condensing structure 43 can cover the center of the corresponding third opening 25H as shown in FIG. 1, but the present disclosure is not limited thereto. In other words, the central axis C3 of each second condensing structure 43 may be aligned so as to pass through the center of the corresponding third opening 25H.

[0050] As shown in FIG. 1, in some embodiments, the first light transmissive layer 51 is in direct contact with the second light shielding layer 23, the first condensing structure 41, the third light shielding layer 25, and the second condensing structure 43. That is, the second light shielding layer 23, the first condensing structure 41, the first light transmissive layer 51, the third light shielding layer 25, and the second condensing structure 43 can be deposited on each other.

[0051] As shown in FIG. 1, in some embodiments, the central axis C1 of each first condensing structure 41 is separated from the central axis C3 of each second condensing structure 43 (or the corresponding second condensing structure 43). In other words, the central axis C1 of each first condensing structure 41 is separated from the central axis C3 of each second condensing structure 43 (or the corresponding second condensing structure 43) in a direction along the stacking plane (surface) of the first light transmissive layer 51. In some embodiments, each photoelectric conversion element 11 corresponds to one first condensing structure 41 and one second condensing structure 43. It should be noted that the photoelectric conversion element 11a may correspond to one first condensing structure 41 and one second condensing structure 43 not shown in the cross-sectional view of FIG. 1.

[0052] As shown in FIG. 1, in some embodiments, each first condensing structure 41 and each second condensing structure 43 have a (semi) spherical surface. In some other embodiments, each first condensing structure 41 and each second condensing structure 43 have an aspherical or freeform surface.

[0053] As shown in FIG. 1, in some embodiments, the semiconductor device 100 further includes a second light transmissive layer 53 disposed between the light adjustment structure 30 and the second light shielding layer 23. In particular, the second light transmissive layer 53 may be deposited on the light adjustment structure 30 and can be in direct contact with the light adjustment structure 30, but the present disclosure is not limited thereto. The material and formation method of the second light transmissive layer 53 may be the same as or similar to those of the first light transmissive layer 51, but the present disclosure is not limited thereto.

[0054] As shown in FIG. 1, in some embodiments, the photoelectric conversion element 11 is used to sense the incident light L, and each incident light L has an incident angle θ in the range of about 1 degree to about 80 degrees. In some embodiments, each incident light L passes through at least two light condensing structures (for example, one first light condensing structure 41 and one second light condensing structure 43) and one light transmissive layer (for example, the first light transmissive layer) between the two light condensing structures, and the refractive index of the lower light condensing structure is different from the refractive index of the light transmissive layer. Even when the inclined incident light has a larger incident angle (for example, 50 degrees or more), coma aberration can be effectively reduced, and as a result, the image signal from the photoelectric conversion element 11 of the semiconductor device 100 becomes of higher quality.

[0055] FIG. 2 is a partial cross-sectional view showing a semiconductor device 102 according to another embodiment of the present disclosure. For simplicity, some components of the semiconductor device 102 are omitted in FIG. 2.

[0056] As shown in FIG. 2, the semiconductor device 102 includes a substrate 10 having a photoelectric conversion element 11. The semiconductor device 102 also includes a first light-shielding layer 21 disposed on the substrate 10 and having a first opening 21H corresponding to the photoelectric conversion element 11. The semiconductor device 102 further includes a light control structure 30 disposed on the first light-shielding layer 21. Also, the semiconductor device 102 includes a second light-shielding layer 23 disposed on the light control structure 30 and having a second opening 23H corresponding to the first opening 21H. The semiconductor device 102 also includes a first light condensing structure 41' disposed on the second light-shielding layer 23 and covering the second opening 23H. The semiconductor device 102 further includes a third light-shielding layer 25 disposed on the first light condensing structure 41' and having a third opening 25H corresponding to the second opening 23H. Further, the semiconductor device 102 includes a second light condensing structure 43 disposed on the third light-shielding layer 25 and covering the third opening 25H. The semiconductor structure 102 also includes a first light transmission layer 51 disposed between the second light-shielding layer 23 and the third light-shielding layer 25.

[0057] In this embodiment, the refractive index of each first light condensing structure 41' is higher than the refractive index of the first light transmission layer 51. The first light condensing structure 41' is a convex microlens corresponding to the second opening 23H, and the second light condensing structure 43 is a convex microlens corresponding to the third opening 25H.

[0058] As shown in FIG. 2, in some embodiments, each first light condensing structure 41' covers at least two second openings 23H, and each second light condensing structure 43 covers one third opening 25H. Also, as shown in FIG. 2, in some embodiments, the central axis C1' of each first light condensing structure 41' overlaps with the central axis C3 of the corresponding second light condensing structure 43.

[0059] As shown in FIG. 2, in some embodiments, each first light condensing structure 41' corresponds to one third opening 25H. In some embodiments, the diameter D41 of each first light condensing structure 41' is larger than the diameter D43 of each second light condensing structure 43 (or the corresponding second light condensing structure 43). That is, in some embodiments, two or more photoelectric conversion elements 11 share the same first light condensing structure 41' and second light condensing structure 43.

[0060] FIG. 3 is a partial cross-sectional view showing a semiconductor device 104 according to an embodiment of the present disclosure. For the sake of brevity, some components of the semiconductor device 104 are omitted in FIG. 3.

[0061] In some embodiments, the refractive index of each first light condensing structure 42 is lower than the refractive index of the first light transmissive layer 51. In this embodiment, the refractive index of each first light condensing structure 42 is between about 1.0 and about 1.5 (for example, 1.3), and the refractive index of the first light transmissive layer 51 is between about 1.4 and about 1.6 (for example, 1.5).

[0062] As shown in FIG. 3, in some embodiments, the first light condensing structure 42 is a concave microlens corresponding to the second opening 23H, and the second light condensing structure 43 is a convex microlens corresponding to the third opening 25H.

[0063] Similarly, as shown in FIG. 3, in some embodiments, the central axis C2 of each first light condensing structure 42 is separated from the central axis C3 of each second light condensing structure 43 (or the corresponding second light condensing structure 43). In other words, the central axis C2 of each first light condensing structure 42 is separated from the central axis C3 of each second light condensing structure 43 (or the corresponding second light condensing structure 43) in a direction along the stacking plane (surface) of the first light transmissive layer 51. In some embodiments, each photoelectric conversion element 11 corresponds to one first light condensing structure 42 and one second light condensing structure 43. Note that the photoelectric conversion element 11a may correspond to one first light condensing structure 42 and one second light condensing structure 43 not shown in the cross-sectional view of FIG. 3.

[0064] FIG. 4 is a partial cross-sectional view showing a semiconductor device 106 according to another embodiment of the present disclosure. For the sake of brevity, some components of the semiconductor device 106 are omitted in FIG. 4.

[0065] In this embodiment, the refractive index of each first light condensing structure 42' is lower than the refractive index of the first light transmission layer 51. The first light condensing structure 42' is a concave microlens corresponding to the second opening 23H, and the second light condensing structure 43 is a convex microlens corresponding to the third opening 25H.

[0066] As shown in FIG. 4, in some embodiments, each first light condensing structure 42' covers at least two second openings 23H, and each second light condensing structure 43 covers one third opening 25H. Also, as shown in FIG. 4, in some embodiments, the central axis C2' of each first light condensing structure 42' overlaps with the central axis C3 of the corresponding second light condensing structure 43.

[0067] As shown in FIG. 4, in some embodiments, each first light condensing structure 42' corresponds to one third opening 25H. In some embodiments, the diameter D42 of each first light condensing structure 42' is larger than the diameter D43 of each second light condensing structure 43 (or the corresponding second light condensing structure 43). That is, in some embodiments, two or more photoelectric conversion elements 11 share the same first light condensing structure 42' and second light condensing structure 43.

[0068] In summary, the semiconductor device according to some embodiments of the present disclosure includes at least two light condensing structures and one light transmission layer between the two light condensing structures. Since the refractive index of the lower light condensing structure is different from the refractive index of the light transmission layer, coma aberration can be effectively reduced. As a result, the quality of the image signal from the photoelectric conversion element of the semiconductor device is improved.

[0069] The foregoing has outlined the features of several embodiments so as to enable a person skilled in the art to better understand the aspects of the present disclosure. A person skilled in the art will appreciate that the present disclosure can be readily utilized as a basis for designing or modifying other processes and structures for carrying out the same purposes and / or achieving the same advantages as the embodiments introduced herein. A person skilled in the art will also understand that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. Accordingly, the scope of protection should be determined through the claims. Furthermore, although some embodiments of the present disclosure have been disclosed above, they are not intended to limit the scope of the present disclosure.

[0070] References throughout this specification to features, advantages, or similar terms do not imply that all of the features and advantages that can be realized with the present disclosure should be or can be realized in any single embodiment of the present disclosure. Rather, the terms referring to the features and advantages are to be understood as meaning that a particular feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, discussions of the features and advantages throughout this specification, and similar terms, may, but do not necessarily, refer to the same embodiment.

[0071] Furthermore, in one or more embodiments, the described features, advantages, and characteristics of the present disclosure may be combined in any suitable manner. A person skilled in the art will recognize, based on the description herein, that the present disclosure can be practiced without one or more of the specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be recognized in particular embodiments that may not be present in all embodiments of the present disclosure.

Description of Reference Numerals

[0072] 100, 102, 104, 106 Semiconductor device 10 Substrate 11, 11a Photoelectric conversion element 21 First light-shielding layer 21H First opening 23 Second light-shielding layer 23H Second opening 25 Third light-shielding layer 25H Third opening 30 Light adjustment structure 41, 41’, 42, 42’ First light condensing structure 43 Second light condensing structure 51 First light transmission layer 53 Second light transmission layer C1, C1’, C2, C2’ Central axes of the first light condensing structure C3 Central axis of the first light condensing structure D41 Diameter of the first light condensing structure D42 Diameter of the first light condensing structure D43 Diameter of the second light condensing structure L Incident light θ Incident angle

Claims

1. A substrate having a photoelectric conversion element; a first light-shielding layer disposed on the substrate and having a first opening corresponding to the photoelectric conversion element; a light adjusting structure disposed on the first light-shielding layer; a second light-shielding layer disposed on the light adjusting structure and having a second opening corresponding to the first opening; a first light-collecting structure disposed on the second light-shielding layer and covering the second opening; a third light-shielding layer disposed on the first light-collecting structure and having a third opening corresponding to the second opening; a second light-collecting structure disposed on the third light-shielding layer and covering the third opening; and a first light transmitting layer disposed between the second light shielding layer and the third light shielding layer; the first light transmitting layer is disposed between the first light concentrating structure and the second light concentrating structure; the refractive index of the first light concentrating structure and the refractive index of the first light transmitting layer are different; a central axis of the first light concentrating structure overlaps with a central axis of the second light concentrating structure; the first opening, the second opening, and the third opening are located on an optical path of inclined incident light which is incident from the second light collecting structure and collected on the photoelectric conversion element via the first light collecting structure; One of the first light-collecting structures covers at least two of the second openings. the first light-collecting structure is a convex microlens; the second light-collecting structure is a convex microlens; A semiconductor device, wherein the refractive index of the first light collecting structure is higher than the refractive index of the first light transmitting layer.

2. A semiconductor device as described in claim 1, wherein the refractive index of the first light-collecting structure is between 1.5 and 2.

5.

3. A substrate having a photoelectric conversion element. a first light-shielding layer disposed on the substrate and having a first opening corresponding to the photoelectric conversion element; a light adjusting structure disposed on the first light-shielding layer; a second light-shielding layer disposed on the light adjusting structure and having a second opening corresponding to the first opening; a first light-collecting structure disposed on the second light-shielding layer and covering the second opening; a third light-shielding layer disposed on the first light-collecting structure and having a third opening corresponding to the second opening; a second light-collecting structure disposed on the third light-shielding layer and covering the third opening; and a first light transmitting layer disposed between the second light shielding layer and the third light shielding layer; the first light transmitting layer is disposed between the first light concentrating structure and the second light concentrating structure; the refractive index of the first light concentrating structure and the refractive index of the first light transmitting layer are different; a central axis of the first light concentrating structure overlaps with a central axis of the second light concentrating structure; the first opening, the second opening, and the third opening are located on an optical path of inclined incident light which is incident from the second light collecting structure and collected on the photoelectric conversion element via the first light collecting structure; One of the first light-collecting structures covers at least two of the second openings. the first light-collecting structure is a concave microlens; the second light-collecting structure is a convex microlens; A semiconductor device, wherein a refractive index of the first light collecting structure is lower than a refractive index of the first light transmitting layer.

4. A semiconductor device as described in claim 3, wherein the refractive index of the first light-collecting structure is between 1.0 and 1.

5.

5. The semiconductor device according to claim 1 , wherein the first light-collecting structure and the second light-collecting structure have a spherical, aspherical or free-form surface.

6. 2. The semiconductor device of claim 1, wherein the photoelectric conversion element corresponds to one of the first light-collecting structures and one of the second light-collecting structures, the photoelectric conversion element is used to sense incident light, and the incident light has an incident angle in the range of 1 degree to 80 degrees.

7. The semiconductor device according to claim 5 , wherein the first light collecting structure corresponds to one of the third openings.

8. The semiconductor device according to claim 5 , wherein a diameter of the first light-collecting structure is larger than a diameter of the second light-collecting structure.

9. Further comprising a second light transmitting layer disposed between the light adjusting structure and the second light blocking layer; 2. The semiconductor device according to claim 1, wherein the first light transmitting layer is in direct contact with the second light shielding layer, the first light collecting structure, the third light shielding layer, and the second light collecting structure, and the light adjusting structure is an infrared cutoff filter.

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