Lead Frame, Semiconductor Device, and Method for Manufacturing Lead Frame

Abstract

To prevent unwanted deformation and damages due to welding.SOLUTION: A lead frame includes: a support part in which an open hole is formed in a one end; a lead; and a radiator plate welded to the support part in one open of the open hole. A manufacturing method of this lead frame, includes: a step of forming a frame member having the support part in which the open hole is formed in the one end and the lead from the metal plate; and a step of welding the radiator plate to the support part in one open of the open hole.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a lead frame, a semiconductor device, and a method for manufacturing a lead frame.

Background Art

[0002] In recent years, semiconductor devices in which semiconductor elements such as IC (Integrated Circuit) chips are mounted on a metal lead frame have been known. That is, for example, a semiconductor element is mounted on a planar die pad provided at the center of a lead frame, and this semiconductor element is connected to a plurality of leads provided around the die pad by, for example, wire bonding. Then, the semiconductor element mounted on the lead frame may be sealed with a resin such as an epoxy resin to form a semiconductor device.

[0003] Some such lead frames are configured by joining a heat sink to a frame member having a plurality of leads without providing a die pad. That is, a heat sink having a thickness thicker than that of the frame member is joined, for example, by welding to the center of a frame member formed of a thin metal plate, and a semiconductor element may be directly mounted on this heat sink. By doing so, the heat generated by the semiconductor element can be efficiently dissipated with a simple structure.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, when the heat sink is joined to the frame member, there is a problem that deformation or damage may occur due to the heat of the frame member or the heat sink. That is, laser welding may be used for joining fine parts such as joining the frame member and the heat sink. However, by irradiating the frame member and the heat sink to be joined with a laser for a long time, heat is transmitted to the periphery of the joined portion, and heat deformation or the like may occur. In particular, when laser welding is performed at a portion where the frame member and the heat sink overlap, the laser is irradiated until it penetrates the frame member formed of a thin plate, and the frame member and the heat sink are welded. For this reason, a relatively high-power laser is irradiated to the joined portion, and deformation or damage may occur up to the periphery of the joined portion.

[0006] On the other hand, in order to prevent such deformation and damage, if the output of the laser is suppressed or the irradiation time of the laser is shortened, the welding of the frame member and the heat sink becomes insufficient, and the quality of the lead frame and the semiconductor device deteriorates.

[0007] The disclosed technology has been made in view of such points, and an object thereof is to provide a lead frame, a semiconductor device, and a method for manufacturing a lead frame that can prevent unnecessary deformation and damage due to welding.

Means for Solving the Problems

[0008] The lead frame disclosed in the present application, in one aspect, has a support portion having a through hole formed at one end, a lead, and a heat sink welded to the support portion at one opening of the through hole.

Effects of the Invention

[0009] According to one aspect of the lead frame, semiconductor device, and method for manufacturing a lead frame disclosed in the present application, there is an effect that unnecessary deformation and damage due to welding can be prevented.

Brief Description of the Drawings

[0010]

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Embodiments for Carrying Out the Invention

[0011] Hereinafter, an embodiment of a lead frame, a semiconductor device, and a method for manufacturing a lead frame disclosed in the present application will be described in detail with reference to the drawings. Note that the present invention is not limited by this embodiment.

[0012] FIG. 1 is a diagram showing the structure of a lead frame 100 according to an embodiment. FIG. 1(a) is a plan view of the lead frame 100, and FIG. 1(b) is a cross-sectional view taken along line I-I of FIG. 1(a).

[0013] The lead frame 100 has a structure in which a heat sink 150 is joined to a frame member having a frame body 110, support bars 120, leads 130, and tie bars 140. The frame member is formed of a thin metal plate such as copper or a copper alloy having a thickness of about 0.1 to 0.25 mm, for example. On the other hand, the heat sink 150 is a plate-shaped member of a metal such as copper or a copper alloy having a thickness thicker than the thin plate forming the frame member, for example, a thickness of 1 mm or more.

[0014] The frame body 110 defines the outer periphery of one lead frame 100 and supports the support bars 120 and a plurality of leads 130 via the tie bars 140. When manufacturing the lead frame 100, a plurality of lead frames 100 are manufactured as an assembly of lead frames connected via the frame body 110. Then, after a semiconductor chip is mounted on the lead frame 100 and resin-sealed, the tie bars 140 between the plurality of leads 130 and between the leads 130 and the support bars 120 are cut. Next, by separating the portion including the support bars 120, the plurality of leads 130, and the heat sink 150 from the frame body 110, an individualized semiconductor device is obtained.

[0015] The support bars 120 are a pair of support portions extending from both ends in the longitudinal direction toward the center at the center in the short direction of the lead frame 100, and support the heat sink 150 at the end portion located at the center of the lead frame 100 (hereinafter referred to as the "center-side end portion"). That is, through holes 125 are formed at positions overlapping the heat sink 150 at the center-side end portions of the pair of support bars 120, and the mounting surface 150a on which the semiconductor chip of the heat sink 150 is mounted is welded in the through holes 125.

[0016] As shown in FIG. 1(b), the cross section of the through hole 125 has a tapered shape in which the diameter decreases as it approaches the heat sink 150. The diameter of the opening of the through hole 125 far from the heat sink 150 is, for example, about 0.4 mm, and the diameter of the opening of the through hole 125 close to the heat sink 150 is, for example, about 0.2 mm. Thus, since the through hole 125 has a tapered shape, the inner wall surface of the through hole 125 is exposed even in a plan view shown in FIG. 1(a), for example.

[0017] The lead 130 extends parallel to the support bar 120 and is a terminal for electrically connecting the semiconductor chip and external components when the semiconductor chip is mounted on the lead frame 100. The lead 130 is shorter than the support bar 120, and the central-side end of the lead 130 does not overlap with the heat sink 150. A plating layer is formed on the surface of the central-side end of the lead 130 that is far from the heat sink 150. When a semiconductor chip is mounted on the lead frame 100, the semiconductor chip is connected to the plating layer by wire bonding.

[0018] The heat sink 150 is a copper plate-like member joined to the central-side ends of the pair of support bars 120. The surface of the heat sink 150 joined to the support bar 120 is the mounting surface 150a for mounting the semiconductor chip. The mounting surface 150a is roughened and has a larger surface roughness compared to other surfaces. The heat sink 150 dissipates the heat generated by the semiconductor chip mounted on the mounting surface 150a from the surface opposite to the mounting surface 150a. For this reason, the surface opposite to the mounting surface 150a is exposed from the mold resin even when the semiconductor chip is sealed with the mold resin.

[0019] Next, a method for manufacturing the lead frame 100 configured as described above will be described with reference to the flowchart shown in FIG. 2.

[0020] First, a frame member is formed by pressing or etching a thin metal plate such as copper or a copper alloy having a thickness of about 0.1 to 0.25 mm (step S101). Specifically, as shown in FIG. 3, for example, the support bar 120, a plurality of leads 130, and the tie bar 140 are formed within the region surrounded by the frame body 110, respectively.

[0021] Then, a through-hole 125 is formed at the central-side end of the support bar 120 (step S102). That is, for example, as shown in FIG. 4, a tapered through-hole 125 is formed at the central-side end of a pair of support bars 120 within each region surrounded by the frame body 110. Note that the formation of the through-hole 125 in step S102 may be performed simultaneously with the molding of the frame member in step S101. Also, the number and shape of the through-holes 125 are not limited to one and a tapered shape.

[0022] FIG. 5 is a diagram showing a specific example of the shape of the through-hole 125. The through-hole 125 may be, for example, a cylindrical through-hole as shown in FIG. 5(a), or may be, for example, a frustum-shaped through-hole having a tapered cross-section as shown in FIG. 5(b). These through-holes 125 are formed at positions where the laser is irradiated when the heat sink 150 is joined to the support bar 120 by laser welding. At this time, it is preferable that the spot diameter of the laser irradiated to the through-hole 125 shown in FIG. 5(a) is larger than the diameter of the through-hole 125 so that the laser is irradiated at the boundary between the support bar 120 and the heat sink 150. That is, as shown by the broken line in FIG. 5(a), it is preferable that the irradiation range of the laser includes the entire opening of the through-hole 125. Also, it is preferable that the spot diameter of the laser irradiated to the through-hole 125 shown in FIG. 5(b) is larger than the diameter of the small-diameter opening portion of the through-hole 125 close to the heat sink 150. That is, as shown by the broken line in FIG. 5(b), it is preferable that the irradiation range of the laser includes a part of the inner wall surface of the through-hole 125. When the through-hole 125 having a tapered cross-section shown in FIG. 5(b) is formed, since the inner wall surface of the through-hole 125 is exposed in plan view, the laser is directly irradiated to the inner wall surface of the through-hole 125, and the laser irradiation area for the support bar 120 can be increased to perform welding efficiently.

[0023] Further, as shown in, for example, FIG. 5(c), the through-hole 125 may have a plurality of through-holes. In this case, as shown by the dashed line in FIG. 5(c), the laser irradiation range is preferably a range that straddles the plurality of through-holes. By forming a plurality of through-holes, even if there is a slight error in the laser irradiation position, the laser is irradiated at the boundary between the support bar 120 and the heat sink 150 in any of the through-holes, and the heat sink 150 can be reliably welded to the support bar 120. Further, as shown in, for example, FIG. 5(d), the through-hole 125 may have a shape having a tab 125a protruding into the through-hole 125. In this case, as shown by the dashed line in FIG. 5(d), the laser irradiation range is preferably a range including at least a part of the tab 125a. Since the tab 125a protrudes into the through-hole 125, even if the laser spot diameter is smaller than the diameter of the through-hole 125, the laser is irradiated at the boundary between the support bar 120 and the heat sink 150, and the heat sink 150 can be reliably welded to the support bar 120. The tab 125a may have an inclination toward the heat sink 150 by bending. By doing so, the tip of the tab 125a is in close contact with the heat sink 150, and stable welding can be performed.

[0024] When the through-hole 125 is formed in the support bar 120, a plating layer is formed at the central-side end of the lead 130 (step S103). Specifically, as shown in, for example, FIG. 6, a plating layer 130a is formed on the surface of each lead 130 on the side opposite to the surface joined to the heat sink 150 at the central-side end. The plating layer 130a is formed by, for example, silver plating.

[0025] Through the steps so far, a frame member made of a thin copper plate is completed. Therefore, a heat sink 150 made of a metal such as copper or a copper alloy having a thickness of 1 mm or more is laser-welded to this frame member (step S104). That is, as shown in, for example, FIG. 7, the heat sink 150 is arranged so as to overlap the through-hole 125 of the support bar 120, and the heat sink 150 is welded to the support bar 120 by irradiating the position of the through-hole 125 with a laser.

[0026] Specifically, as shown in Fig. 8(a), the frame member and the heat sink 150 are aligned so that the through hole 125 of the support bar 120 overlaps with the welding position of the mounting surface 150a of the heat sink 150. Then, the laser is irradiated on both the vicinity of the through hole 125 of the support bar 120 and the mounting surface 150 of the heat sink 150. That is, as shown in Fig. 8(b), for example, the laser L is irradiated on the range including the inner wall surface of the through hole 125 and the mounting surface 150a of the heat sink 150. Here, since the cross section of the through hole 125 is tapered, the inner wall surface of the through hole 125 is exposed as seen from the irradiation source of the laser L. Thereby, the laser L can be directly irradiated on the inner wall surface of the through hole 125, and the laser irradiation area for the support bar 120 can be increased to perform welding efficiently.

[0027] As a result of irradiating the laser on both the vicinity of the through hole 125 of the support bar 120 and the mounting surface 150 of the heat sink 150 in this way, as shown in Fig. 8(c), for example, the range W at the boundary between the support bar 120 and the heat sink 150 is welded, and the frame member and the heat sink 150 are integrated.

[0028] The laser used for laser welding can be, for example, a green laser or a fiber laser. Since the through hole 125 is formed in the support bar 120 in advance, the output of the laser can be relatively low, for example, an output of 1.5 kW or less is sufficient. Also, the irradiation time of the laser at the position of each through hole 125 can be, for example, about 0.2 to 0.5 seconds. Thus, since the through hole 125 is formed in the support bar 120 in advance, the output of the laser can be made low and the irradiation time can be made short. As a result, the heat of the laser is not transmitted to areas other than the vicinity of the through hole 125 to be welded, and deformation and damage of the frame member and the heat sink 150 can be prevented.

[0029] Further, the mounting surface 150a welded to the support bar 120 of the heat sink 150 is roughened to form a roughened surface. Specifically, for example, as shown in FIG. 9, the mounting surface 150a of the heat sink 150 has a larger surface roughness due to copper roughening plating or anodizing treatment. That is, the surface roughness of the mounting surface 150a of the heat sink 150 is larger than the surface roughness of the surface on the opposite side of the mounting surface 150a of the heat sink 150. Therefore, the surface roughness of the mounting surface 150a exposed at the bottom of the through hole 125 of the support bar 120 is large, and the reflection of the laser irradiated onto the mounting surface 150a through the through hole 125 can be suppressed, improving the absorptivity of the laser and enabling efficient welding.

[0030] In this way, by laser welding the heat sink 150 in the through hole 125 of the support bar 120, the lead frame 100 is formed. A semiconductor chip is mounted on this lead frame 100, and the semiconductor chip is sealed with a mold resin such as epoxy resin, for example. Then, by cutting the support bar 120 and the lead 130 from the frame 110, a semiconductor device is obtained.

[0031] FIG. 10 is a diagram showing a specific example of the structure of a semiconductor device. FIG. 10(a) shows a cross section of the semiconductor device at a position along the support bar 120, and FIG. 10(b) shows a cross section of the semiconductor device at a position along the lead 130.

[0032] As shown in FIG. 10, the semiconductor chip 210 is mounted on the mounting surface 150a of the heat sink 150, and the semiconductor chip 210 and the lead 130 are connected by wire bonding. That is, the electrode of the semiconductor chip 210 and the plating layer 130a of the lead 130 are connected by a wire 230. Then, this semiconductor chip 210 is sealed with a mold resin 220. At this time, the surface on the opposite side of the mounting surface 150a of the heat sink 150 is exposed from the mold resin 220, and the heat generated by the semiconductor chip 210 mounted on the mounting surface 150a can be efficiently dissipated.

[0033] The central side end of the support bar 120 in which the through hole 125 is formed is sealed by the mold resin 220 together with the semiconductor chip 210, and the other end of the support bar 120 protrudes from the side surface of the mold resin 220 and is bent into a shape similar to that of the lead 130. The support bar 120 bent into a shape similar to that of the lead 130 in this way may be used as a lead for a ground wiring. On the other hand, the central side end of the lead 130 connected to the semiconductor chip 210 in the plating layer 130a is sealed by the mold resin 220 together with the semiconductor chip 210, and the other end of the lead 130 protrudes from the side surface of the mold resin 220 and is bent. The end of the lead 130 protruding from the mold resin 220 can be connected to other components such as a wiring board, for example. That is, the lead 130 is used as a lead for signal wiring, for example.

[0034] As described above, according to the present embodiment, a through hole is formed in advance in a frame member formed of a thin plate, and a heat sink having a thickness thicker than that of the frame member is joined by laser welding in the through hole. For this reason, the output of the laser for welding can be set to a low output, and the irradiation time of the laser can be set to a short time. As a result, the heat of the laser is not transmitted except in the vicinity of the through hole, and unnecessary deformation and damage due to welding can be prevented.

[0035] In the above-described embodiment, the lead frame 100 used for a semiconductor device of an SOP (Small Outline Package) type in which the leads 130 protrude in two directions from the mold resin 220 has been described. However, the lead frame 100 similar to the above-described embodiment can also be applied to a semiconductor device of a QFP (Quad Flat Package) type in which the leads 130 protrude in four directions from the mold resin 220.

[0036] In addition, it is also possible to apply the lead frame 100 similar to the above-described embodiment to a semiconductor device of, for example, a SON (Small Outline Non-leaded package) type or a QFN (Quad Flat Non-leaded package) type in which the lead 130 does not protrude from the mold resin 220.

[0037] FIG. 11 is a diagram showing the structure of a lead frame 100 used in a SON-type semiconductor device. FIG. 11(a) is a plan view of the lead frame 100, and FIG. 11(b) is a cross-sectional view taken along line II-II in FIG. 11(a).

[0038] In the lead frame 100 shown in FIG. 11, the support bar 120 and the lead 130 each extend in the longitudinal direction of the lead frame 100 from the short side of the frame body 110. A through hole 125 having a tapered cross section is formed at the central end of the support bar 120 in the same manner as in the above-described embodiment, and a heat sink 150 is welded to the through hole 125. The heat sink 150 is welded to the support bar 120 on the mounting surface 150a on which the semiconductor chip is mounted. Further, the support bar 120 and the lead 130 are bent so that the ends opposite to the central ends are located at positions that become external terminals of the semiconductor device.

[0039] Also in such a lead frame 100, since the through hole 125 is formed in advance at the central end of the support bar 120, when laser-welding the heat sink 150 to the support bar 120, the output of the laser can be set to a low output and the irradiation time of the laser can be set to a short time. As a result, laser heat is not transmitted except in the vicinity of the through hole, and unnecessary deformation and damage due to welding can be prevented.

[0040] FIG. 12 is a diagram showing a specific example of the structure of a semiconductor device. FIG. 12(a) shows a cross section of the semiconductor device at a position along the support bar 120, and FIG. 12(b) shows a cross section of the semiconductor device at a position along the lead 130.

[0041] As shown in FIG. 12, the semiconductor chip 210 is mounted on the mounting surface 150a of the heat sink 150, and the semiconductor chip 210 and the lead 130 are connected by wire bonding. That is, the electrode of the semiconductor chip 210 and the lead 130 are connected by the wire 230. Then, the entire lead frame 100 on which the semiconductor chip 210 is mounted is sealed by the mold resin 220. At this time, the surface of the heat sink 150 opposite to the mounting surface 150a is exposed from the mold resin 220, and the heat generated by the semiconductor chip 210 mounted on the mounting surface 150a can be efficiently dissipated.

[0042] Also, the opposite ends of the support bar 120 and the central side end of the lead 130 are exposed from the side surface and the lower surface of the mold resin 220. Since the end of the lead 130 is exposed from the mold resin 220, this end serves as an external terminal for connecting the semiconductor device to other components such as a wiring board.

[0043] In this way, it is also possible to form a SON type or QFN type semiconductor device in which the lead 130 does not protrude from the mold resin 220 using the above-described lead frame 100.

[0044] In the above embodiment, it has been described that the entire opening of the through hole 125 of the support bar 120 is included in the irradiation range of the laser. As such a laser, for example, a green laser (wavelength: 532 nm) having a spot diameter of about 0.2 to 0.3 mm can be used. On the other hand, when laser welding is performed using a fiber laser (wavelength: 1064 nm) having a spot diameter of about 0.024 to 0.044 mm, which is smaller than the green laser, the laser may be irradiated at a plurality of locations of the opening of the through hole 125.

[0045] Specifically, for example, as shown in Fig. 13(a), the laser L is irradiated at a plurality of locations near the boundary between the inner wall surface of the through hole 125 and the mounting surface 150a of the heat sink 150. The output of the laser L irradiated at each of the plurality of locations may be a relatively low output, for example, an output of 1.5 kW or less. Also, the irradiation time of the laser at each of the plurality of locations may be, for example, about 0.2 to 0.5 seconds. In this way, since the through hole 125 is formed in the support bar 120 in advance, even when laser welding is performed using a fiber laser with a relatively small spot diameter, the output of the laser can be set to a low output and the irradiation time can be shortened. As a result, laser heat is not transmitted to areas other than near the through hole 125 to be welded, and deformation and damage of the frame member and the heat sink 150 can be prevented.

[0046] Also, for example, when the through hole 125 has a cylindrical shape as shown in Fig. 13(b), a plurality of locations at the opening edge of the through hole 125 become the laser irradiation range IA, and the support bar 120 and the heat sink 150 are joined at the plurality of locations. In the example shown in Fig. 13(b), four locations at the opening edge of the through hole 125 are the laser irradiation range IA, but at least two locations may be the laser irradiation range IA. Since the support bar 120 and the heat sink 150 are joined near each of the plurality of laser irradiation ranges IA, the joining reliability of the support bar 120 and the heat sink 150 improves as the number of laser irradiation ranges IA increases.

[0047] Furthermore, for example, when a plurality of tabs 125a protruding into the through hole 125 are formed as shown in Fig. 13(c), for example, the vicinity of the tip of each of the plurality of tabs 125a can be set as the laser irradiation range IA. In this case, the laser irradiation range IA may be provided not only near the tip of the tab 125a but also near the root of the tab 125a or at the opening edge of the through hole 125. Also, for example, by forming the tab 125a thinner than the surrounding support bar 120 body, it is possible to further reduce the output of the laser and further shorten the irradiation time.

Explanation of reference numerals

[0048] 100 lead frame 110 frame 120 support bar 125 through-hole 125a tab 130 lead 130a plating layer 140 tie bar 150 heat sink 150a mounting surface 210 semiconductor chip 220 molding resin 230 wire

Claims

1. A pair of support portions extending such that one end of each faces the other, the pair of support portions each having a through hole formed at one end thereof, a lead, and a heat dissipation plate welded to the pair of support portions at one opening of the through hole of each of the pair of support portions, having, wherein an inner peripheral edge of one opening of the through hole of each of the pair of support portions is welded to the heat dissipation plate. A lead frame characterized by the above.

2. The through hole has a tapered shape in which the diameter of the other opening is larger than the diameter of the one opening. The lead frame according to Claim 1, characterized by the above.

3. The through hole is formed in plurality at one end of each of the pair of support portions. The lead frame according to Claim 1, characterized by the above.

4. The through hole has a tab protruding inward. The lead frame according to Claim 1, characterized by the above.

5. The heat dissipation plate has a surface roughness of the surface joined to the pair of support portions larger than that of the other surfaces. The lead frame according to Claim 1, characterized by the above.

6. The heat dissipation plate is welded to the pair of support portions at a plurality of locations of one opening of the through hole. The lead frame according to Claim 1, characterized by the above.

7. A frame body further having, wherein the pair of support portions extend such that one end of each faces the other from both ends in the first direction toward the center at the center in the second direction orthogonal to the first direction of the frame body. The lead frame according to Claim 1, characterized by the above.

8. A lead frame, a semiconductor element mounted on the lead frame, and a sealing resin for sealing the semiconductor element, having, wherein the lead frame is a pair of support portions extending such that one end of each faces the other, the pair of support portions each having a through hole formed at one end thereof, a lead, and a heat dissipation plate welded to the pair of support portions at one opening of the through hole of each of the pair of support portions, wherein an inner peripheral edge of one opening of the through hole of each of the pair of support portions is welded to the heat dissipation plate, wherein the semiconductor element is mounted on one surface of the heat dissipation plate and connected to the lead. A semiconductor device characterized by the above.

9. The heat dissipation plate has a surface on the opposite side of the surface on which the semiconductor element is mounted exposed from the sealing resin. The semiconductor device according to Claim 8, characterized by the above.

10. The lead has a part exposed from the sealing resin. The semiconductor device according to Claim 8, characterized by the above.

11. A step of forming a frame member having a pair of support portions extending from a metal plate such that one end of each of the support portions faces the other, the pair of support portions each having a through hole formed at one end thereof, and leads; A step of welding a heat sink to the pair of support portions at one opening of each of the through holes of the pair of support portions; and having The inner peripheral edge of one opening of each of the through holes of the pair of support portions is welded to the heat sink. A method for manufacturing a lead frame, characterized in that.

12. The forming step forms a frame member having a pair of support portions in which a tapered through hole having a diameter of the other opening larger than the diameter of the one opening is formed. A method for manufacturing a lead frame according to claim 11, characterized in that.

13. The method further includes a step of performing a roughening treatment to make the surface roughness of one surface of the heat sink larger than the surface roughness of the other surface, and the welding step welds one surface of the heat sink to the support portion. A method for manufacturing a lead frame according to claim 11, characterized in that.

14. The welding step performs laser welding using a laser having a spot diameter larger than the diameter of the through hole. A method for manufacturing a lead frame according to claim 11, characterized in that.

15. The welding step performs laser welding using a laser having a spot diameter smaller than the diameter of the through hole. A method for manufacturing a lead frame according to claim 11, characterized in that.

16. The welding step welds the heat sink to the pair of support portions at a plurality of locations of one opening of the through hole. A method for manufacturing a lead frame according to claim 15, characterized in that.

17. The forming step forms the frame member further having a frame body, and the pair of support portions extend from both ends in the first direction toward the center in the second direction orthogonal to the first direction of the frame body such that one end of each of the support portions faces the other. A method for manufacturing a lead frame according to claim 11, characterized in that.

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