Electronic module

Abstract

The present invention is an electronic module comprising: a first semiconductor element that has a plurality of first electrodes; a second semiconductor element that has a plurality of second electrodes; a capacitor; a substrate that has a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a third wiring pattern; and a plurality of electrical connection members. The first wiring pattern has one part of the first electrodes and another part of the second electrodes connected thereto. The second wiring pattern has one part of the second electrodes and one part of the capacitor connected thereto. The third wiring pattern has another part of the first electrodes and another part of the capacitor connected thereto. The plane of the first electrodes and the plane of the second electrodes are at mutually different height positions. The one part of the first electrodes, the another part of the second electrodes, and the first wiring pattern are connected by one electrical connection member among the plurality of electrical connection members. According to the present invention, an electronic module can be provided that satisfies the requirements of operation stability and reliability even during a high-speed switching operation.

Description

Technical Field

[0001] The present invention relates to an electronic module.

Background Art

[0002] An electronic module equipped with a power semiconductor contributes to the miniaturization of converters, inverters, etc., and proposals as shown in the following patent documents are known.

[0003] In Patent Document 1, in order to reduce parasitic inductance, DC power input / output electrodes formed by conductor patterns on an insulating substrate are provided at one end of a circuit board. The DC power input / output electrodes are provided with a plurality of positive electrodes and a plurality of negative electrodes arranged side by side along the edge of one end, and it is disclosed that it has a positive electrode arranged between two negative electrodes and a negative electrode arranged between two positive electrodes.

[0004] In Patent Document 2, a positive electrode side DC terminal and a negative electrode side DC terminal connected to one of the upper and lower arms in each pair of upper and lower arms are arranged in mirror symmetry with respect to a positive electrode side DC terminal and a negative electrode side DC terminal connected to the other of the upper and lower arms in each pair of upper and lower arms, so it is disclosed that inductance can be reduced.

[0005] In Patent Document 3, in a power conversion device having a first parasitic inductance, a first diode, a second parasitic inductance connected in series with the first diode, a second diode connected in parallel with the first diode, a third parasitic inductance connected in series with the second diode, a switching element, a gate circuit, and a load, the LC resonance frequencies of the first circuit loop and the second circuit loop are set to different frequencies to suppress high-frequency vibration. In the simulation, it is described that the first parasitic inductance is 30 nH, the second parasitic inductance is 10 nH, and the third parasitic inductance is 40 nH.

[0006] Patent Document 4 describes a specific numerical example in a switching device equipped with a high-side transistor and a low-side transistor, where the parasitic inductance of the high-side power supply line is 40 nH.

[0007] Patent Document 5 states that the loop inductance of a circuit equipped with two switching MOSFETs is preferably, for example, 60 nanohenries (nH) or less.

Prior Art Documents

Patent Documents

[0008]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Summary of the Invention

Problems to be Solved by the Invention

[0009] By the way, in recent years, from the perspective of carbon neutrality, expectations for compound semiconductors (such as GaN) that can operate at high speed and with large current have been increasing. Along with the requirements to increase the switching frequency in a switching power supply system from the conventional several hundred kHz to the several MHz band and to increase the turn-on and turn-off speed by more than one order of magnitude, there has been an increasing demand to reduce switching losses, surge voltages, and noise during the operation of the circuit system.

[0010] However, even if an electronic module is configured using a compound semiconductor that can operate at high speed and with a large current by using conventional discrete components and electronic modules, it is difficult to reduce the inductance. An excessive surge voltage exceeding the rating of the switching element occurs during high-speed switching operation, and it is impossible to reduce switching losses and noise, making it difficult to satisfy the requirements in terms of operation stability and reliability. That is, although it is obvious to those skilled in the art to reduce and countermeasure parasitic inductance as in the above patent document, in the case of the prior art, as shown in Patent Documents 3 to 5, the inductance value is about several tens of nH, and at that level, there is a problem that it is extremely difficult to satisfy the above requirements.

[0011] Therefore, an object of the present invention is to provide an electronic module that satisfies the requirements in terms of operation stability and reliability even during high-speed switching operation.

Means for Solving the Problems

[0012] [1] The electronic module of the present invention (Aspect 1) includes a first semiconductor element having a plurality of first electrodes, a second semiconductor element having a plurality of second electrodes, a capacitor, a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a substrate having a third wiring pattern, and a plurality of electrical connection members. The first wiring pattern is connected to a part of the first electrode and the other part of the second electrode. The second wiring pattern is connected to a part of the second electrode and a part of the capacitor. The third wiring pattern is connected to the other part of the first electrode and the other part of the capacitor. The surfaces of the first electrode and the second electrode are at different height positions. A part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members.

[0013] [2] In the electronic module of the present invention (Aspect 1), it is preferable that a position adjusting member for adjusting the height position of the surface of the second electrode or the surface of the first electrode is disposed between the second wiring pattern and the second semiconductor element, or between the first wiring pattern and the first semiconductor element.

[0014] [3] In the electronic module of the present invention (Aspect 1), it is preferable that the height of the first semiconductor element is different from the height of the second semiconductor element.

[0015] [4] In the electronic module of the present invention (Aspect 1), it is preferable that the surface of the first electrode is at a position lower than the surface of the second electrode, and the first wiring pattern is at a position lower than the surface of the first electrode.

[0016] [5] In the electronic module of the present invention (Aspect 1), it is preferable that the first semiconductor element mounting region in the first wiring pattern, the second semiconductor element mounting region in the second wiring pattern, and a part of the third wiring pattern are formed to be parallel to each other.

[0017] [6] In the electronic module of the present invention (Aspect 1), the plurality of electrical connection members are used for connecting the first semiconductor element, the second semiconductor element, the first wiring pattern, the second wiring pattern, and the third wiring pattern respectively, and the first semiconductor element, the second semiconductor element, the first wiring pattern, the second wiring pattern, and the third wiring pattern are configured such that the connection distances of the plurality of electrical connection members are each the shortest.

[0018] [7] In the electronic module of the present invention (Aspect 1), the second wiring pattern has a first capacitor connection portion to which a part of the capacitor is connected, the third wiring pattern has a second capacitor connection portion to which the other part of the capacitor is connected, and the second wiring pattern and the third wiring pattern are arranged such that the wiring route from a part of the second electrode, through the second wiring pattern, the capacitor, and the third wiring pattern, to the other part of the first electrode is the shortest. Preferably, the planar shapes of the second wiring pattern and the third wiring pattern, and the formation positions of the first capacitor connection portion and the second capacitor connection portion are defined.

[0019] [8] In the electronic module of the present invention (Aspect 1), the electronic module preferably includes a power supply terminal, an output terminal, and a ground terminal on one side, and a control signal terminal on the other side, and the capacitor is arranged on the one side.

[0020] [9] In the electronic module of the present invention (Aspect 1), the plurality of electrical connection members are preferably linear or plate-shaped electrical connection members.

[0021]

[10] In the electronic module of the present invention (Aspect 1), the plurality of electrical connection members are linear electrical connection members. When the higher surface of the surfaces of the first electrode and the second electrode is defined as the first surface, and the lower surface of the surfaces of the first electrode and the second electrode is defined as the second surface, the height position of the vertex of the electrical connection member in the first loop portion connecting the electrode corresponding to the first surface and the electrode corresponding to the second surface is preferably higher than the height position of the vertex of the electrical connection member in the second loop portion connecting the electrode corresponding to the second surface and the first wiring pattern.

[0022]

[11] In the electronic module of the present invention (Aspect 1), the planar position of the vertex of the electrical connection member in the first loop portion is biased toward the electrical connection member attachment position on the first surface rather than the intermediate position between the electrical connection member attachment position on the first surface and the electrical connection member attachment position on the second surface, and the planar position of the vertex of the electrical connection member in the second loop portion is preferably biased toward the electrical connection member attachment position on the second surface rather than the intermediate position between the electrical connection member attachment position on the second surface and the electrical connection member attachment position in the first wiring pattern.

[0023]

[12] In the electronic module of the present invention (Aspect 1), the parasitic inductance of the portion connecting the first semiconductor element and the second semiconductor element is preferably smaller than the parasitic inductance of the portion connecting the first semiconductor element and the capacitor and the parasitic inductance of the portion connecting the second semiconductor element and the capacitor.

[0024]

[13] In the electronic module of the present invention (Aspect 1), the first semiconductor element and the second semiconductor element are preferably made of a semiconductor having silicon, gallium nitride, silicon carbide, or gallium oxide as a material.

[0025]

[14] In the electronic module of the present invention (Aspect 1), each of the first semiconductor element and the second semiconductor element is preferably a transistor in which a drain electrode is disposed on one side of the same surface and a source electrode is disposed on the other side, or a diode in which a cathode electrode is disposed on one side of the same surface and an anode electrode is disposed on the other side.

[0026]

[15] In the electronic module of the present invention (Aspect 1), the first semiconductor element and the second semiconductor element are preferably used in a half-bridge circuit.

[0027]

[16] The electronic module of the present invention (Aspect 1) includes a first semiconductor element having a plurality of first electrodes, a second semiconductor element having a plurality of second electrodes, a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a substrate having a third wiring pattern, and a plurality of electrical connection members. The first wiring pattern is connected to a part of the first electrode and the other part of the second electrode, the second wiring pattern is connected to a part of the second electrode, the third wiring pattern is connected to the other part of the first electrode, the surfaces of the first electrode and the second electrode are at different height positions, and a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members.

[0028] In addition, also in the electronic module described in the above

[16] , for the applicable features among the features described in the above [2] to

[15] , it is preferable to have these features.

[0029]

[17] The electronic module of the present invention (Aspect 2) includes a first semiconductor element having a plurality of first electrodes, a second semiconductor element having a plurality of second electrodes, a capacitor, a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a substrate having a third wiring pattern, and a plurality of electrical connection members. The first wiring pattern is connected to a part of the first electrode and the other part of the second electrode, the second wiring pattern is connected to a part of the second electrode and a part of the capacitor, the third wiring pattern is connected to the other part of the first electrode and the other part of the capacitor, a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members, and the first semiconductor element and the second semiconductor element are arranged such that the extending directions of a part of the first electrode and the other part of the second electrode are the same.

[0030]

[18] In the electronic module of the present invention (Aspect 2), it is preferable that the first semiconductor element mounting region in the first wiring pattern, the second semiconductor element mounting region in the second wiring pattern, and a part of the third wiring pattern are arranged to be parallel to each other.

[0031]

[19] In the electronic module of the present invention (Aspect 2), the second wiring pattern has a first capacitor connection portion to which a part of the capacitor is connected, the third wiring pattern has a second capacitor connection portion to which the other part of the capacitor is connected, and the second wiring pattern and the third wiring pattern are arranged such that the wiring route from a part of the second electrode through the second wiring pattern, the capacitor, and the third wiring pattern to the other part of the first electrode is the shortest. It is preferable that the planar shapes of the second wiring pattern and the third wiring pattern, and the formation positions of the first capacitor connection portion and the second capacitor connection portion are defined.

[0032]

[20] In the electronic module of the present invention (Aspect 2), the electronic module is provided with a power supply terminal, an output terminal, and a ground terminal on one side, and a control signal terminal on the other side, and it is preferable that the capacitor is arranged on the one side.

[0033]

[21] In the electronic module of the present invention (Aspect 2), it is preferable that the plurality of electrical connection members are linear or plate-shaped electrical connection members.

[0034]

[22] In the electronic module of the present invention (Aspect 2), it is preferable that the first semiconductor element and the second semiconductor element are made of a semiconductor having silicon, gallium nitride, silicon carbide, or gallium oxide as a material.

[0035]

[23] In the electronic module of the present invention (Aspect 2), it is preferable that the parasitic inductance of the portion connecting the first semiconductor element and the second semiconductor element is smaller than the parasitic inductance of the portion connecting the first semiconductor element and the capacitor, and the parasitic inductance of the portion connecting the second semiconductor element and the capacitor.

[0036]

[24] In the electronic module of the present invention (Aspect 2), each of the first semiconductor element and the second semiconductor element is preferably a transistor in which a drain electrode is disposed on one side of the same surface and a source electrode is disposed on the other side, or a diode in which a cathode electrode is disposed on one side of the same surface and an anode electrode is disposed on the other side.

[0037]

[25] In the electronic module of the present invention (Aspect 2), the first semiconductor element and the second semiconductor element are preferably used in a half-bridge circuit.

[0038]

[26] The electronic module of the present invention (Aspect 2) includes a first semiconductor element having a plurality of first electrodes, a second semiconductor element having a plurality of second electrodes, a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a substrate having a third wiring pattern, a plurality of electrical connection members, wherein a part of the first electrode and the other part of the second electrode are connected to the first wiring pattern, a part of the second electrode is connected to the second wiring pattern, the other part of the first electrode is connected to the third wiring pattern, a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members, and the first semiconductor element and the second semiconductor element are arranged such that the extending direction of a part of the first electrode and the extending direction of the other part of the second electrode are the same.

[0039] Note that also in the electronic module described in

[26] above, for the applicable features among the features described in

[18] to

[25] above, it is preferable to have these features.

[0040]

[27] The electronic module of the present invention (Aspect 3) includes a first semiconductor element having a plurality of first electrodes, a second semiconductor element having a plurality of second electrodes, a capacitor, a first wiring pattern on which the first semiconductor element is mounted, a substrate having a second wiring pattern on which the second semiconductor element is mounted and a third wiring pattern, a first electrical connection member, a second electrical connection member, a third electrical connection member, and a fourth electrical connection member. A part of the first electrode is connected by the first electrical connection member to the first wiring pattern, and another part of the second electrode is connected by the fourth electrical connection member to the first wiring pattern. A part of the second electrode is connected by the second electrical connection member to the second wiring pattern, and a part of the capacitor is connected to the second wiring pattern. Another part of the first electrode is connected by the third electrical connection member to the third wiring pattern, and another part of the capacitor is connected to the third wiring pattern. The first semiconductor element and the second semiconductor element are arranged in different orientations.

[0041]

[28] In the electronic module of the present invention (Aspect 3), the first wiring pattern has a shape based on an L, the second wiring pattern and the third wiring pattern have shapes based on a rectangle, and it is preferable that the third wiring pattern is arranged surrounded by the first wiring pattern and the second wiring pattern on three sides.

[0042]

[29] In the electronic module of the present invention (Aspect 3), the first semiconductor element is arranged in a region of the first wiring pattern adjacent to the second wiring pattern and the third wiring pattern, and another part of the first electrode is arranged parallel and close to the third wiring pattern. The second semiconductor element is arranged in a region of the second wiring pattern adjacent to the first wiring pattern, and another part of the second electrode is arranged parallel and close to the first wiring pattern. It is preferable that the capacitor is arranged in a region close to the second semiconductor element, connected to the second wiring pattern and the third wiring pattern.

[0043]

[30] In the electronic module of the present invention (Aspect 3), the second wiring pattern has a first capacitor connection portion to which a part of the capacitor is connected, the third wiring pattern has a second capacitor connection portion to which the other part of the capacitor is connected, and a wiring route from a part of the second electrode through the second electrical connection member, the second wiring pattern, the capacitor, the third wiring pattern, and the third electrical connection member to the other part of the first electrode is the shortest. It is preferable that the planar shapes of the second wiring pattern and the third wiring pattern, the mounting positions of the second semiconductor elements, and the formation positions of the first capacitor connection portion and the second capacitor connection portion are defined.

[0044]

[31] In the electronic module of the present invention (Aspect 3), it is preferable that the first electrical connection member, the second electrical connection member, the third electrical connection member, and the fourth electrical connection member are linear or plate-shaped electrical connection members.

[0045]

[32] In the electronic module of the present invention (Aspect 3), it is preferable that the first semiconductor element and the second semiconductor element are made of a semiconductor using silicon, gallium nitride, silicon carbide, or gallium oxide as a material.

[0046]

[33] In the electronic module of the present invention (Aspect 3), it is preferable that the first semiconductor element and the second semiconductor element are a transistor in which a drain electrode is arranged on one side of the same surface and a source electrode is arranged on the other side, or a diode in which a cathode electrode is arranged on one side of the same surface and an anode electrode is arranged on the other side.

[0047]

[34] In the electronic module of the present invention (Aspect 3), it is preferable that the first semiconductor element and the second semiconductor element are used in a half-bridge circuit.

[0048]

[35] The electronic module of the present invention (Aspect 3) includes a first semiconductor element having a plurality of first electrodes, a second semiconductor element having a plurality of second electrodes, a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a substrate having a third wiring pattern, a first electrical connection member, a second electrical connection member, a third electrical connection member, and a fourth electrical connection member. A part of the first electrode is connected by the first electrical connection member, and the other part of the second electrode is connected by the fourth electrical connection member to the first wiring pattern. A part of the second electrode is connected by the second electrical connection member to the second wiring pattern. The other part of the first electrode is connected by the third electrical connection member to the third wiring pattern. The first semiconductor element and the second semiconductor element are arranged in different orientations.

[0049] In the electronic module described in the above

[35] , among the features described in the above

[28] to

[34] , it is preferable to have these applicable features.

[0050]

[36] The electronic module of the present invention (Aspect 4) is composed of a first switch element which is a normally-on type semiconductor element having a first drain electrode, a first source electrode, and a first gate electrode, and a second switch element which is a normally-off type semiconductor element having a second drain electrode, a second source electrode, and a second gate electrode. The second drain electrode and the first source electrode are joined by a conductive bonding material A first cascode switch element in which the second switch element is stacked on the first switch element in a joined state, and the first gate electrode and the second source electrode are connected; a third switch element composed of a normally-on semiconductor element having a third drain electrode, a third source electrode, and a third gate electrode; and a fourth switch element composed of a normally-off semiconductor element having a fourth drain electrode, a fourth source electrode, and a fourth gate electrode. The fourth switch element is stacked on the third switch element in a state where the fourth drain electrode and the third source electrode are joined by a conductive bonding material, and the third gate electrode and the fourth source electrode are connected. A second cascode switch element; a capacitor; a substrate having a first wiring pattern on which the first cascode switch element is mounted, a second wiring pattern on which the second cascode switch element is mounted, and a third wiring pattern; a first electrical connection member; a second electrical connection member; a third electrical connection member; and a fourth electrical connection member. The first wiring pattern has the second source electrode connected by the first electrical connection member and the third drain electrode connected by the fourth electrical connection member. The second wiring pattern has the fourth source electrode connected by the second electrical connection member and a part of the capacitor connected. The third wiring pattern has the first drain electrode connected by the third electrical connection member and the other part of the capacitor connected. The first cascode switch element and the second cascode switch element are arranged in different directions.

[0051]

[37] In the electronic module of the present invention (Aspect 4), the first switching element includes the first drain electrode, the first source electrode, and the first gate electrode on one surface, the first drain electrode and the first source electrode are arranged in parallel, the second switching element includes the second gate electrode and the second source electrode on one surface and the second drain electrode on the other surface, the third switching element includes the third drain electrode, the third source electrode, and the third gate electrode on one surface, the third drain electrode and the third source electrode are arranged in parallel, and the fourth switching element preferably includes the fourth gate electrode and the fourth source electrode on one surface and the fourth drain electrode on the other surface.

[0052]

[38] In the electronic module of the present invention (Aspect 4), the first gate electrode and the first wiring pattern are connected by a first cascode electrical connection member, the third gate electrode and the second wiring pattern are connected by a second cascode electrical connection member, the first cascode switching element has the first gate electrode and the second source electrode connected via the first cascode electrical connection member, the first wiring pattern, and the first electrical connection member, and the second cascode switching element preferably has the third gate electrode and the fourth source electrode connected via the second cascode electrical connection member, the second wiring pattern, and the second electrical connection member.

[0053]

[39] In the electronic module of the present invention (Aspect 4), the first wiring pattern has a shape based on an L, the second wiring pattern and the third wiring pattern have shapes based on a rectangle, and the third wiring pattern is preferably arranged surrounded by the first wiring pattern and the second wiring pattern on three sides.

[0054]

[40] In the electronic module of the present invention (Aspect 4), the first cascode switch element is disposed in a region adjacent to the second wiring pattern and the third wiring pattern in the first wiring pattern, the first drain electrode is disposed in parallel close to the third wiring pattern, the second cascode switch element is disposed in a region adjacent to the first wiring pattern in the second wiring pattern, the third drain electrode is disposed in parallel close to the first wiring pattern, and it is preferable that the capacitor is disposed in a region adjacent to the second cascode switch element and connected to the second wiring pattern and the third wiring pattern.

[0055]

[41] In the electronic module of the present invention (Aspect 4), the second wiring pattern has a first capacitor connection portion to which a part of the capacitor is connected, the third wiring pattern has a second capacitor connection portion to which the other part of the capacitor is connected, and the second wiring pattern and the third wiring pattern are arranged such that the wiring route from the fourth source electrode through the second electrical connection member, the second wiring pattern, the capacitor, the third wiring pattern, and the third electrical connection member to the first drain electrode is the shortest. It is preferable that the planar shapes of the second wiring pattern and the third wiring pattern, the mounting position of the second cascode switch element, and the formation positions of the first capacitor connection portion and the second capacitor connection portion are defined.

[0056]

[42] In the electronic module of the present invention (Aspect 4), it is preferable that the first electrical connection member, the second electrical connection member, the third electrical connection member, and the fourth electrical connection member are linear or plate-like electrical connection members.

[0057]

[43] In the electronic module of the present invention (Aspect 4), it is preferable that the first switch element and the third switch element are made of a wide bandgap semiconductor material and are switch elements with a higher breakdown voltage than the second switch element and the fourth switch element.

[0058]

[44] In the electronic module of the present invention (Aspect 4), the wide bandgap semiconductor material preferably consists of gallium nitride, silicon carbide, gallium oxide, or diamond.

[0059]

[45] In the electronic module of the present invention (Aspect 4), a ground terminal, a power supply terminal, and an output terminal are arranged on one side of the electronic module, and a control signal terminal is arranged on the other side. The capacitor is preferably arranged in the vicinity of the ground terminal and the power supply terminal, and the first cascode switch element and the second cascode switch element are preferably arranged close to the capacitor.

[0060]

[46] In the electronic module of the present invention (Aspect 4), the first cascode switch element and the second cascode switch element are preferably used in a half-bridge circuit.

[0061]

[47] In the electronic module of the present invention (Aspect 4), a first switch element composed of a normally-on semiconductor element having a first drain electrode, a first source electrode, and a first gate electrode, and a second switch element composed of a normally-off semiconductor element having a second drain electrode, a second source electrode, and a second gate electrode. The second switch element is stacked on the first switch element in a state where the second drain electrode and the first source electrode are joined by a conductive bonding material, and a first cascode switch element in which the first gate electrode and the second source electrode are connected. A third switch element composed of a normally-on semiconductor element having a third drain electrode, a third source electrode, and a third gate electrode, and a fourth switch element composed of a normally-off semiconductor element having a fourth drain electrode, a fourth source electrode, and a fourth gate electrode. The fourth switch element is stacked on the third switch element in a state where the fourth drain electrode and the third source electrode are joined by a conductive bonding material, and a second cascode switch element in which the third gate electrode and the fourth source electrode are connected. A substrate having a first wiring pattern on which the first cascode switch element is mounted, a second wiring pattern on which the second cascode switch element is mounted, and a third wiring pattern, a first electrical connection member, a second electrical connection member, a third electrical connection member, and a fourth electrical connection member. The first wiring pattern is connected to the second source electrode by the first electrical connection member and to the third drain electrode by the fourth electrical connection member. The second wiring pattern is connected to the fourth source electrode by the second electrical connection member. The third wiring pattern is connected to the first drain electrode by the third electrical connection member. The first cascode switch element and the second cascode switch element are arranged in different directions.

[0062] In the electronic module described in the above

[47] as well, for the applicable features among the features described in the above

[37] to

[46] , it is preferable to have these features.

Advantages of the Invention

[0063] According to the electronic module of the present invention (Aspect 1), each semiconductor element, capacitor, each electrical connection member, and each wiring pattern are arranged as described above. Also, the surfaces of the first electrode and the second electrode are at different height positions from each other. Since a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members, the parasitic inductance can be reduced by comprehensively optimizing the length, width, and curvature of the wiring, and further reduction of inductance inside the electronic module including the electrical connection member becomes possible. Further, when a circuit system is configured using the electronic module 100, switching loss, surge voltage, and noise can be reduced. Thereby, performance improvements such as the operation stability and reliability of the circuit system using the electronic module can be achieved. In this case, when the electrical connection member 51 is an electrical connection member having a curved portion (for example, a plate-like electrical connection member having a curved portion, a linear (wire-like) electrical connection member), since the surface of the second electrode and the surface of the first electrode are at different height positions (so-called terraced shape), the degree of curvature of the curved portion can be reduced and the length of the electrical connection member 51 can be shortened, and the parasitic inductance can be further reduced.

[0064] According to the electronic module of the present invention (Aspect 2), since each semiconductor element, capacitor, each electrical connection member, and each wiring pattern are arranged as described above, the length of the electrical connection member (especially one electrical connection member) can be shortened. Therefore, further reduction of inductance inside the electronic module is possible, and switching loss, surge voltage, and noise can be reduced when a circuit system is configured using the electronic module. Thereby, performance improvements such as the operation stability and reliability of the circuit system using the electronic module can be achieved.

[0065] According to the electronic module of the present invention (Aspect 3), since each semiconductor element, capacitor, each wiring pattern, and each electrical connection member are arranged as described above, the length of each electrical connection member can be shortened. Further, it is possible to further reduce the inductance inside the electronic module including portions other than each electrical connection member. For this reason, it is possible to further reduce the inductance inside the electronic module, and it is possible to reduce switching loss, surge voltage, and noise when a circuit system is configured using the electronic module. Thereby, it is possible to improve performance such as the operation stability and reliability of the circuit system using the electronic module.

[0066] The electronic module of the present invention (Aspect 4) is an electronic module including a first cascode switch element composed of a first switch element made of a normally-on type semiconductor element and a second switch element made of a normally-off type semiconductor element, and a second cascode switch element composed of a third switch element made of a normally-on type semiconductor element and a fourth switch element made of a normally-off type semiconductor element. For this reason, according to the electronic module of the present invention (Aspect 4), switch elements (first switch element, third switch element) made of normally-on type semiconductor elements (for example, wide bandgap semiconductors such as GaN) capable of high breakdown voltage and high-frequency driving are used together with switch elements (second switch element, fourth switch element) made of conventional normally-off type semiconductor elements (for example, semiconductor elements such as silicon) and connected in cascode, thereby becoming a normally-off type switching element, the switching frequency can be increased to the order of several MHz, the turn-on and turn-off speed can be increased by more than one digit compared to the conventional one, and further, high-frequency driving of the power supply system can be realized.

[0067] Further, according to the electronic module (Aspect 4) of the present invention, since each semiconductor element, capacitor, each wiring pattern, and each electrical connection member are arranged as described above, the length of each electrical connection member can be shortened. Further, it is possible to further reduce the inductance inside the electronic module including portions other than each electrical connection member. For this reason, it is possible to further reduce the inductance of the electronic module, and it is possible to reduce switching loss, surge voltage, and noise when a circuit system is configured using the electronic module. As a result, as described above, by using a wide bandgap semiconductor element (for example, GaN) as the first switch element and the third switch element, the switching frequency can be increased to the order of several MHz, and the turn-on / off speed can be increased by more than one digit compared to the conventional one. Even when the power supply system is driven at a high frequency, it is possible to improve the performance such as the operation stability and reliability of the circuit system.

[0068] As a result, the electronic module (Aspect 4) of the present invention becomes an electronic module that satisfies the requirements in terms of operation stability and reliability even when it is a high-frequency-driven electronic module using a wide bandgap semiconductor element.

[0069] In this specification, "connected" means "electrically connected".

Brief Description of Drawings

[0070]

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Mode for Carrying Out the Invention

[0071] Hereinafter, an electronic module for implementing the present invention will be described with reference to the drawings. Note that each drawing is a schematic diagram and does not necessarily strictly reflect actual dimensions. Also, each embodiment described below does not limit the invention according to the claims. Further, not all of the elements and their combinations described in each embodiment are essential for the solution means of the present invention. Also, in each embodiment, for the same configurations, elements (including components whose shapes are not exactly the same), the same reference numerals may be used across embodiments and the description may be omitted again.

[0072] [The present invention (Aspect 1)] FIG. 1 is a conceptual diagram of an electronic module 100 according to the present invention (Aspect 1). FIG. 1(A) is a plan view, and FIG. 1(B) is a cross-sectional view taken along the line X-X of FIG. 1(A).

[0073] The electronic module 100 according to the present invention (Aspect 1) is a resin-sealed type electronic module. As shown in FIG. 1(A), it includes a first semiconductor element 10 having a plurality of first electrodes 11d, 12s, 13g, a second semiconductor element 20 having a plurality of second electrodes 21d, 22s, 23g, a capacitor 30, a first wiring pattern 41 on which the first semiconductor element 10 is mounted, a substrate 40 having a second wiring pattern 42 on which the second semiconductor element 20 is mounted and a third wiring pattern 43, and a plurality of electrical connection members 51, 52, 53.

[0074] In the electronic module 100 according to the present invention (Aspect 1), a part 12s of the first electrode and the other part of the second electrode 21d are connected to the first wiring pattern 41, a part 22s of the second electrode and a part 31 of the capacitor 30 are connected to the second wiring pattern 42, and the other part 11d of the first electrode and the other part 32 of the capacitor 30 are connected to the third wiring pattern 43.

[0075] In the electronic module 100 according to the present invention (Aspect 1), as shown in FIG. 1(B), the surface of the first electrode and the surface of the second electrode are at different height positions from each other, and a part 12s of the first electrode, the other part 21d of the second electrode, and the first wiring pattern 41 are connected by one electrical connection member (electrical connection member 51) among the plurality of electrical connection members.

[0076] In the electronic module 100 according to the present invention (Aspect 1), as is apparent from FIG. 1(B), the second electrode 21d, the first electrode 12s, and the first wiring pattern 41 having different height positions are sequentially connected by the electrical connection member 51. The surfaces of the second electrodes 21d, 22s, 23g of the second semiconductor element 20 are higher than the surfaces of the first electrodes 11d, 12s, 13g of the first semiconductor element 10. Note that either the surface of the first electrodes 11d, 12s, 13g or the surface of the second electrodes 21d, 22s, 23g may be higher.

[0077] By adopting the above configuration, the parasitic inductance can be reduced by comprehensively optimizing the length, width, and curvature of the wiring, and further reduction of the inductance inside the electronic module 100 including the electrical connection member 51 becomes possible. Further, when a circuit system is configured using the electronic module 100, switching loss, surge voltage, and noise can be reduced. In this case, when the electrical connection member 51 is an electrical connection member having a curved portion (for example, a plate-like electrical connection member having a curved portion, a linear (wire-like) electrical connection member), since the surface of the second electrode and the surface of the first electrode are at different height positions (so-called terraced shape), the degree of curvature of the curved portion can be reduced and the length of the electrical connection member 51 can be shortened, so that the parasitic inductance can be further reduced.

[0078] In particular, in the electronic module 100, it is possible to reduce the inductance of the connection portion between the first semiconductor element 10 and the second semiconductor element 20. The connection portion between the first semiconductor element 10 and the second semiconductor element 20 is a potential portion that is extremely important from the viewpoint of operation stability in a circuit system having a bridge structure such as a half-bridge circuit. Therefore, reducing the inductance of the above connection portion (the first electrode 12s, the second electrode 21d, the electrical connection member 51, the first wiring pattern 41) has a remarkable effect on reducing switching loss, surge voltage, and noise in a circuit system having a bridge structure such as a half-bridge circuit.

[0079] Note that the first semiconductor element 10 corresponds to the first semiconductor element in the present invention (Aspect 1). The second semiconductor element 20 corresponds to the second semiconductor element in the present invention (Aspect 1). The capacitor 30 corresponds to the capacitor in the present invention (Aspect 1). The substrate 40 corresponds to the substrate in the present invention (Aspect 1). The electrical connection member 51 corresponds to the electrical connection member in the present invention (Aspect 1). The plurality of first electrodes 11d, 12s, 13g correspond to the plurality of first electrodes in the present invention (Aspect 1). The plurality of second electrodes 21d, 22s, 23g correspond to the plurality of second electrodes in the present invention (Aspect 1).

[0080] The first wiring pattern 41 corresponds to the first wiring pattern in the present invention (Aspect 1). A part 12s of the first electrode corresponds to a part of the first electrode in the present invention (Aspect 1). The other part 21d of the second electrode corresponds to the other part of the second electrode in the present invention (Aspect 1). The second wiring pattern 42 corresponds to the second wiring pattern in the present invention (Aspect 1). A part 22s of the second electrode corresponds to a part of the second electrode in the present invention (Aspect 1). A part 31 of the capacitor corresponds to a part of the capacitor in the present invention (Aspect 1). The third wiring pattern 43 corresponds to the third wiring pattern in the present invention (Aspect 1). The other part 11d of the first electrode corresponds to the other part of the first electrode in the present invention (Aspect 1). The other part 32 of the capacitor corresponds to the other part of the capacitor in the present invention (Aspect 1).

[0081] [Embodiment 1] FIG. 2 is a cross-sectional view of the electronic module 110 according to Embodiment 1. FIG. 2 is a cross-sectional view taken along the line X-X of FIG. 1.

[0082] Between the second wiring pattern 42 and the second semiconductor element 20 (see FIG. 2) or between the first wiring pattern 41 and the first semiconductor element 10 of the electronic module 100, a position adjusting member 60 for adjusting the height position of the surfaces of the second electrodes 21d, 22s, 23g or the surfaces of the first electrodes 11d, 12s, 13g is disposed. By adjusting the height position of the surfaces of the second electrodes 21d, 22s, 23g or the first electrodes 11d, 12s, 13g by the position adjusting member 60, it becomes easier to perform the adjustment operations of the length, width, and curvature of the wiring, and it is possible to reduce the parasitic inductance between the second electrode 21d and the first electrode 12s.

[0083] In FIG. 2, as the electrical connection member 51, for example, a linear conductor may be used to connect (wire bond) the first electrode 12s and the second electrode 21d. However, the electrical connection member 51 is not limited to being linear and may be formed of a plate-shaped conductor. As the material of the electrical connection member 51, for example, aluminum, copper, or gold can be appropriately used for configuration.

[0084] Parasitic inductance is an inductive component parasitic to the wiring and is affected by the length, width, curvature, etc. of the wiring. This parasitic inductance needs to be reduced as the circuit operating frequency is higher. However, by using the position adjusting member 60 shown in FIG. 2, the effect of reducing the parasitic inductance can be achieved.

[0085] In the electronic module 110 according to Embodiment 1, the position adjusting member 60 is disposed between the second wiring pattern 42 and the second semiconductor element 20, and by adjusting the surface height position of the second electrode 21d by the position adjusting member 60, the parasitic inductance between the first electrode 12s and the second electrode 21d can be reduced.

[0086] In the electronic module 110 according to Embodiment 1, as described above, since the parasitic inductance of the portion where the first semiconductor element 10, the second semiconductor element 20, and the first wiring pattern 41 are connected is set to be small, further reduction of inductance inside the electronic module 100 including the electrical connection member 51 becomes possible.

[0087] The connection portion between the first semiconductor element 10 and the second semiconductor element 20 is an extremely important portion from the viewpoint of operation stability in a circuit system having a bridge structure such as a half-bridge circuit. Reducing the inductance of the above connection portion (the first electrode 12s, the second electrode 21d, the electrical connection member 51, the first wiring pattern 41) has a remarkable effect on reducing switching loss, surge voltage, and noise.

[0088] In particular, when using an easily curved electrical connection member 51 (for example, a wire) as shown in the configuration example of FIG. 2, generally, the parasitic inductance tends to be higher than that of a plate-shaped electrical connection member. However, by adopting the configuration of Embodiment 2, as a result of the comprehensive optimization of the length, width, and curvature, the parasitic inductance between the first electrode 12s and the second electrode 21d can be reduced.

[0089] In the electronic module 110, the height position of the apex of the electrical connection member 51 in the first loop portion that connects the other part 21d of the second electrode and a part 12s of the first electrode is higher than the height position of the apex of the electrical connection member 51 in the second loop portion that connects the part 12s of the first electrode and the first wiring pattern 41. Also, the planar position of the apex of the electrical connection member 51 in the above-described first loop portion is biased toward the attachment position of the electrical connection member 51 in the other part 21d of the second electrode side from the intermediate position between the attachment position of the electrical connection member 51 in the other part 21d of the second electrode and the attachment position of the electrical connection member 51 in the part 12s of the first electrode, and the planar position of the apex of the electrical connection member 51 in the second loop portion is biased toward the attachment position of the electrical connection member 51 in the part 12s of the first electrode side from the intermediate position between the attachment position of the electrical connection member 51 in the part 12s of the first electrode and the attachment position of the electrical connection member 51 in the wiring pattern 41. Thereby, it becomes possible to shorten the length of the electrical connection member 51, and the parasitic inductance between the second electrode 21d and the first electrode 12s and the parasitic inductance between the first electrode 12s and the wiring pattern 41 can be reduced.

[0090] In addition, in FIG. 2, the position adjusting member 60 shows an example of adjusting the surface of the second electrode 21d along the vertical direction with respect to the surface of the first electrode 12s, but the position adjusting member 60 may be configured to adjust the surface of the second electrode 21d along the horizontal direction. If adjustment is performed not only in the vertical direction but also along the horizontal direction, the parasitic inductance between the first electrode 12s and the second electrode 21d can be further reduced depending on the length, width, curvature, etc. of the wiring.

[0091] Also, in FIG. 2, the position adjusting member 60 is disposed between the second wiring pattern 42 and the second semiconductor element 20 and is configured to adjust the surface height position of the second electrode 21d, but the position adjusting member 60 may be disposed between the first wiring pattern 41 and the first semiconductor element 10 and configured to adjust the surface height position of the first electrode 12s. Note that the position adjusting member 60 corresponds to the position adjusting member of the present invention (Aspect 1).

[0092] The first semiconductor element 10 and the second semiconductor element 20 are made of a semiconductor using silicon, gallium nitride, silicon carbide, or gallium oxide as a material, and the first semiconductor element 10 and the second semiconductor element 20 may be made of semiconductors of the same material or different materials, respectively.

[0093] Thereby, since the electronic module according to Embodiment 1 is composed of semiconductor elements having functions suitable for circuit applications (half-bridge circuits, totem-pole type power factor improvement circuits, etc.) selectively, when a circuit system is configured using the electronic module, switching loss, surge voltage, and noise can be reduced, and performance improvement such as operation stability and reliability of the circuit system using the electronic module can be achieved.

[0094] In particular, in a switching power supply system using a compound semiconductor that can operate at high speed and with a large current, such as gallium nitride, silicon carbide, or gallium oxide, for requirements such as speeding up the switching frequency to the MHz band and speeding up the turn-on and turn-off speeds by one digit or more, and for requirements such as reducing switching loss, surge voltage, and noise during circuit system operation, according to the electronic module 110 of the embodiment according to Embodiment 1, a particularly remarkable effect is achieved.

[0095] Next, the electrodes disposed on the surfaces of the first semiconductor element 10 and the second semiconductor element 20 will be described.

[0096] FIG. 3 shows an example of the first electrode and the second electrode disposed on the surfaces of the first semiconductor element 10 and the second semiconductor element 20.

[0097] The first semiconductor element 10 and the second semiconductor element 20 are transistors or diodes. In the case of transistors, it is preferable that drain electrodes 11d, 21d are arranged on one side of the same surface of each of the first semiconductor element 10 or the second semiconductor element 20, and source electrodes 12s, 22s are arranged on the other side. FIG. 3 is an example of a transistor, and the drain electrodes 11d, 21d and the source electrodes 12s, 22s are each composed of a plurality of electrodes. For example, in the example shown in FIG. 3, there are three. The gate electrodes 13g, 23g are respectively arranged on the right side or the left side of the source electrodes 12s, 22s, and the detection source electrodes 12sb, 22sb are respectively arranged between the gate electrodes 13g, 23g and the source electrodes 12s, 22s.

[0098] In the case of a diode, it is preferable that a cathode electrode is arranged on one side of the same surface of each of the first semiconductor element 10 or the second semiconductor element 20, and an anode electrode is arranged on the other side.

[0099] By adopting such a horizontal configuration, since it is composed of semiconductor elements with functions suitable for circuit applications (such as half-bridge circuits, totem-pole type power factor improvement circuits, etc.) selectively, it is possible to reduce switching losses, surge voltages, and noise when constructing a circuit system using an electronic module, and it is possible to improve the performance such as the operation stability and reliability of the circuit system using the electronic module.

[0100] In addition, when the first semiconductor element 10 and the second semiconductor element 20 are transistors, since the gate electrodes 13g, 23g and the detection source electrodes 12sb, 22sb are formed in the vicinity of the source electrodes 12s, 22s as shown in FIG. 3, the parasitic inductance of the gate-source wiring loop can be reduced, and the performance such as the operation stability and reliability of the circuit system can be improved.

[0101] Specific examples of the horizontal configuration include cases where GaN transistors are formed on a silicon substrate, cases where GaN transistors are formed on a sapphire substrate, and the like.

[0102] The first semiconductor element 10 and the second semiconductor element 20 are preferably used in a half-bridge circuit. Thereby, the inductance of the half-bridge circuit can be reduced, and an electronic module 110 of a stable half-bridge circuit can be provided. Next, an electronic module using a half-bridge circuit will be described.

[0103] [Embodiment 2] FIG. 4 is a diagram showing equivalent circuits 120 of the electronic modules 100 and 110 and the electronic module 130 shown in Embodiment 2. The first semiconductor element 10 and the second semiconductor element 20 constitute a half-bridge circuit. The drain electrode 11d of the first semiconductor element 10 is connected to the power supply terminal 70 via the third wiring pattern 43. The source electrode 12s of the first semiconductor element 10 is connected to the drain electrode 21d of the second semiconductor element 20 and the first wiring pattern 41 by the electrical connection member 51, and is connected to the output terminal 72 via the first wiring pattern 41.

[0104] The source electrode 22s of the second semiconductor element 20 is connected to the ground terminal 74 via the second wiring pattern 42. The capacitor 30 is connected to the power supply terminal 70 and the ground terminal 74 via the third wiring pattern 43 and the second wiring pattern 42. It is a circuit in which the capacitor 30 is connected in parallel to the first semiconductor element 10 and the second semiconductor element 20 connected in series. A control signal is input to the gate electrode 13g and the gate electrode 23g to perform the switching operation of the first semiconductor element 10 and the second semiconductor element 20 constituting the half-bridge circuit. Note that detection source electrodes 12sb and 12sb are also provided.

[0105] In the equivalent circuit 120 shown in FIG. 4, the portion connecting the source electrode 12s of the first semiconductor element 10 and the drain electrode 21d of the second semiconductor element 20 is the parasitic inductance L1, the portion connecting the drain electrode 11d of the first semiconductor element 10 and the capacitor 30 is the parasitic inductance L2, and the portion connecting the source electrode 22s of the second semiconductor element 20 and the capacitor 30 is the parasitic inductance L3.

[0106] In the present invention (Aspect 1), referring to the equivalent circuit 120 shown in FIG. 4, the parasitic inductance L1 of the portion connecting the first semiconductor element 10 and the second semiconductor element 20 is set to be smaller than the parasitic inductance L2 of the portion connecting the first semiconductor element 10 and the capacitor 30, and the parasitic inductance L3 of the portion connecting the second semiconductor element 20 and the capacitor 30. As a result, further reduction of inductance inside the electronic module 100 including the electrical connection member 51 becomes possible.

[0107] FIG. 5 is a diagram showing the electronic module 130 according to Embodiment 2. FIG. 6 is a perspective view for explaining the step D in Embodiment 2. FIG. 6 shows an enlarged view of the region A surrounded by the broken line in FIG. 5.

[0108] As shown in FIG. 5, the electronic module 130 according to Embodiment 2 includes a first semiconductor element 10 having a plurality of first electrodes 11d, 12s, 13g, a second semiconductor element 20 having a plurality of second electrodes 21d, 22s, 23g, a capacitor 30, a first wiring pattern 41 on which the first semiconductor element 10 is mounted, a substrate 40 having a second wiring pattern 42 and a third wiring pattern 43 on which the second semiconductor element 20 is mounted, and a plurality of electrical connection members 51, 52, 53. The substrate 40 uses, for example, a DCB substrate in which a copper circuit board is directly bonded to a ceramic substrate.

[0109] In the electronic module 130 according to Embodiment 2, a part 12s of the first electrode and the other part of the second electrode 21d are connected to the first wiring pattern 41, a part 22s of the second electrode and a part 31 of the capacitor 30 are connected to the second wiring pattern 42, and the other part 11d of the first electrode and the other part 32 of the capacitor 30 are connected to the third wiring pattern 43.

[0110] In the electronic module 130 according to Embodiment 2, the surfaces of the first electrodes 11d, 12s, 12sb, 13g and the surfaces of the second electrodes 21d, 22s, 22sb, 23g are at different height positions from each other as shown in FIG. 6, and a part 12s of the first electrode, the other part 21d of the second electrode, and the first wiring pattern 41 are connected by one electrical connection member (electrical connection member 51) among the plurality of electrical connection members. The electrical connection member 52 connects a part 22s of the second electrode and the second wiring pattern 42, and the electrical connection member 53 connects the other part 11d of the first electrode and the third wiring pattern 43.

[0111] The surfaces of the first electrodes 11d, 12s, 12sb, 13g are at positions lower than the surfaces of the second electrodes 21d, 22s, 22sb, 23g, and the surface of the first wiring pattern 41 is lower than the surfaces of the first electrodes 11d, 12s, 12sb, 13g. Therefore, by comprehensively optimizing the length, width, and curvature of the wiring, parasitic inductance can be reduced, and further reduction of inductance inside the electronic module including the electrical connection member 51 becomes possible. Further, when a circuit system is configured using the electronic module 130, switching loss, surge voltage, and noise can be reduced. Thereby, performance improvements such as the operation stability and reliability of the circuit system using the electronic module can be achieved.

[0112] The electrical connection members 51, 52, 53 are used for connecting the first semiconductor element 10, the second semiconductor element 20, the first wiring pattern 41, the second wiring pattern 42, and the third wiring pattern 43, respectively, and the first semiconductor element 10, the second semiconductor element 20, the first wiring pattern 41, the second wiring pattern 42, and the third wiring pattern 43 are configured such that the connection distances of the electrical connection members 51, 52, 53 are each the shortest. Thereby, further reduction of inductance inside the electronic module 130 becomes possible.

[0113] In the electronic module 130 according to Embodiment 2, the portions where the second electrode 21d, the first electrode 12s, and the first wiring pattern 41 are connected, the portion where the drain electrode 11d of the first semiconductor element 10 and the third wiring pattern 43 are connected, and the portion where the source electrode 22s of the second semiconductor element 20 and the second wiring pattern 42 are connected are each configured to have the shortest distance. Thereby, further reduction of inductance inside the electronic module 130 becomes possible.

[0114] Note that the electrical connection member 51 corresponds to the electrical connection member “used for connecting the second electrode 21d, the first electrode 12s, and the first wiring pattern 41” in the present invention (Aspect 1). The electrical connection member 52 corresponds to the electrical connection member “used for connecting the source electrode 22s of the second semiconductor element 20 and the second wiring pattern 42” in the present invention (Aspect 1). The electrical connection member 51 corresponds to the electrical connection member “used for connecting the drain electrode 11d of the first semiconductor element 10 and the third wiring pattern 43” in the present invention (Aspect 1).

[0115] In the electronic module 130 according to Embodiment 2, the parasitic inductance L1 of the portion connecting the first semiconductor element 10 and the second semiconductor element 20 is smaller than the parasitic inductance L2 of the portion connecting the first semiconductor element 10 and the capacitor 30 and the parasitic inductance L3 of the portion connecting the second semiconductor element 20 and the capacitor.

[0116] The connection portion between the first semiconductor element 10 and the second semiconductor element 20 is a potential portion that is extremely important from the viewpoint of operation stability in a circuit system having a bridge structure such as a half-bridge circuit. The reduction of inductance of the above connection portion (the first electrode 12s, the second electrode 21d, the electrical connection member 51, the first wiring pattern 41) has a remarkable effect on reducing switching loss, surge voltage, and noise.

[0117] In region A surrounded by the dashed line in FIG. 5, the mounting region of the first semiconductor element 10 in the first wiring pattern 41, the mounting region of the second semiconductor element 20 in the second wiring pattern 42, and a part of the third wiring pattern 43 are formed to be parallel to each other. Thereby, the connection distances of the first semiconductor element 10, the second semiconductor element 20, the first wiring pattern 41, the second wiring pattern 42, and the third wiring pattern 43 can be configured to be the shortest, and further reduction of inductance inside the electronic module 130 becomes possible.

[0118] The second wiring pattern 42 has a first capacitor connection portion 34 to which a part 31 of the capacitor is connected. The third wiring pattern 43 has a second capacitor connection portion 35 to which the other part 32 of the capacitor is connected. The planar shapes of the second wiring pattern 42 and the third wiring pattern 43, and the formation positions of the first capacitor connection portion 34 and the second capacitor connection portion 35 are defined so that the wiring route from a part 22s of the second electrode through the second wiring pattern 42, the capacitor 30, and the third wiring pattern 43 to the other part 11d of the first electrode becomes the shortest. Resists are formed around the first capacitor connection portion 34 and the second capacitor connection portion 35, respectively.

[0119] A part 31 of the capacitor and the first capacitor connection portion 34, and the other part 32 of the capacitor and the second capacitor connection portion 35 are connected in the portions surrounded by these resists, respectively. That is, with the configuration as in Embodiment 2, the wiring route from a part 22s of the second electrode through the second wiring pattern 42, the capacitor 30, and the third wiring pattern 43 to the other part 11d of the first electrode becomes the shortest. When the electronic module 130 is applied to a circuit system having a bridge structure such as a half-bridge circuit, for example, the snubber effect is maximally exhibited, and remarkable effects are achieved in reducing switching loss, surge voltage, and noise.

[0120] Note that the first capacitor connection portion 34 corresponds to the first capacitor connection portion of the present invention (Aspect 1). The second capacitor connection portion 35 corresponds to the second capacitor connection portion of the present invention (Aspect 1).

[0121] Referring to FIG. 6, the position adjusting member 60, for example, has a thickness of 0.4 mm and is disposed between the second wiring pattern 42 and the second semiconductor element 20. The first semiconductor element 10 is directly mounted on the first wiring pattern 41. Thus, the surfaces of the second electrodes 21d, 22s, 22sb, 23g are configured to be higher than the surfaces of the first electrodes 11d, 12s, 12sb, 13g by a step D due to the thickness 0.4 mm of the position adjusting member 60. The surfaces of the first electrodes 11d, 12s, 12sb, 13g are higher than the surfaces of the first wiring pattern 41 and the third wiring pattern 43.

[0122] Further, since the first semiconductor element 10 and the second semiconductor element 20 are arranged in the same direction, the second electrode 21d and the first electrode 12s are arranged adjacent to each other, and the connection between the second electrode 21d and the first electrode 12s can be made at the shortest distance, thereby reducing the parasitic inductance. That is, the parasitic inductance is an inductive component parasitic on the wiring and is affected by the length, width, curvature, etc. of the wiring, but the parasitic inductance can be reduced by adopting the configuration shown in FIG. 6. Here, the "same direction" means that the arrangement directions of the plurality of source electrodes and the plurality of drain electrodes in the first semiconductor element 10 and the second semiconductor element 20 are the same. When the source electrode or the drain electrode is a single horizontally long electrode, the "same direction" can also mean that the extending directions of the source electrode and the drain electrode in the first semiconductor element 10 and the second semiconductor element 20 are the same. Also, it can be said that the longitudinal directions of the first semiconductor element 10 and the second semiconductor element 20 are the same.

[0123] As shown in FIG. 5, on one side of the electronic module 130, a power supply terminal 70, an output terminal 72, and a ground terminal 74 are arranged, and on the other side, a first control signal terminal 80, a first detection signal terminal 81, a second detection signal terminal 82, and a second control signal terminal 83 are arranged. The first control signal terminal 80 is connected to a fourth wiring pattern 44 formed on the surface of the substrate 40, and the first detection signal terminal 81 is connected to a fifth wiring pattern 45 formed on the surface of the substrate 40. The second detection signal terminal 82 is connected to a sixth wiring pattern 46 formed on the surface of the substrate 40, and the second control signal terminal 83 is connected to a seventh wiring pattern 47 formed on the surface of the substrate 40.

[0124] The first gate electrode 13g is connected to the fourth wiring pattern 44 by a fifth electrical connection member 55, and the first detection source electrode 12sb is connected to the fifth wiring pattern 45 by a sixth electrical connection member 56. The second detection source electrode 22sb is connected to the sixth wiring pattern 46 by a seventh electrical connection member 57, and the second gate electrode 23g is connected to the seventh wiring pattern 47 by an eighth electrical connection member 58.

[0125] In the electronic module 130 according to Embodiment 2, the parasitic inductances L1, L2, and L3 of each part shown in the equivalent circuit 120 of FIG. 4 depend on the structure of the electrical connection members and wiring patterns shown in FIG. 5 and are obtained by simulation. As a result of simulation considering the electrical connection members and structure, L1 was 0.49 nH, L2 was 1.63 nH, and L3 was 1.73 nH. It can be seen that these values are at least one digit lower compared with the above-described conventional technologies (Patent Documents 3, 4, 5, etc.).

[0126] As shown in FIG. 5, the shape of the first wiring pattern 41 is based on an L shape, the width of the mounting area of the first semiconductor element 10 is 3.5 mm, and the width of the output terminal connection area is 6.5 mm. The shape of the second wiring pattern 42 is based on an L shape, the width of the mounting area of the second semiconductor element 20 is 4.1 mm, and the width of the ground terminal connection area is 9.0 mm. The dimensions of the third wiring pattern 43 are a rectangular shape with a width of 8.3 mm and a length of 3.5 mm. Also, the wire diameter is φ200 μm.

[0127] FIG. 7 is a diagram showing a double-pulse test. FIG. 7(A) is a diagram showing a simulation block 140 of a double-pulse test circuit when the first semiconductor element 10 and the second semiconductor element 20 are configured by transistors (for example, GaN HEMT). The drain-source voltage VDS and the drain current ID after turn-off in the switching waveform by the double-pulse test are simulated.

[0128] The circuit configuration is that of a half-bridge boost circuit, where the first semiconductor element 10 and the second semiconductor element 20 are connected in series, and the capacitor 30 is connected in parallel to the series circuit of the first semiconductor element 10 and the second semiconductor element 20. The choke coil 142 is connected to the 400V input power supply 144, and the other end of the choke coil 142 is connected to the midpoint of the first semiconductor element 10 and the second semiconductor element 20. The boosted voltage is clamped by the 400V output power supply 146.

[0129] In the double-pulse test, as shown in FIG. 7(B), the first control signal S1 and the second control signal S2 are applied between the gate-source of the first semiconductor element 10 as a transistor and the second semiconductor element 20 as a transistor, respectively. First, the second semiconductor element 20 is turned on by the second control signal S2 and turned off after a time T1. After a predetermined dead time from this timing, the first semiconductor element 10 is turned on by the first control signal S1 and turned off after a time T2.

[0130] After a predetermined dead time from this timing, the second semiconductor element 20 is turned on by the second control signal S2 and turned off after a time T3. This is the switching waveform measurement timing, and the waveforms of the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 as a transistor are measured.

[0131] FIG. 8 is a diagram obtained by simulating the switching waveforms of the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 in the electronic module 130 according to Embodiment 2. In FIG. 8, the inductances L1, L2, and L3 (see FIG. 4) in the electronic module 130 according to Embodiment 2 are obtained by simulation, and the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 as a transistor are simulated using the simulation block 140 of the double-pulse test circuit shown in FIG. 7(A), and the switching waveforms are measured at the switching waveform measurement timing.

[0132] The parasitic inductances L1, L2, and L3 of the connection portions represent the parasitic inductances of the wiring patterns of the equivalent circuit shown in FIG. 4. The parasitic inductances L1, L2, and L3 of the electronic module 130 are obtained by simulation as L1 = 0.49 nH, L2 = 1.63 nH, and L3 = 1.73 nH. Also, the parasitic inductances of the conventional type of electronic module described later were L1 = 3.35 nH, L2 = 8.30 nH, and L3 = 8.97 nH.

[0133] The parasitic inductance of the electronic module 130 is more than one digit lower compared to the above-described conventional technologies (Patent Documents 3, 4, 5, etc.). Note that the capacitor 30 mounted inside the electronic module 130 is 0.01 μF, and the inductance of the choke coil 142 connected outside the electronic module 130 is 50 μH.

[0134] As shown in FIG. 8, in the double-pulse test using the electronic module 130 according to Embodiment 2, the maximum drain-source voltage is 490 V. As the first semiconductor element 10 and the second semiconductor element 20, it can be seen that a sufficient margin is ensured with respect to the specification rating as long as the absolute maximum rating voltage between the drain and the source is 650 V. Also, the surge voltage has decayed to about 10 Vp-p, for example, 180 ns after the switching waveform measurement timing, indicating that the operation is stable. This is also clear from the waveform of the drain current ID.

[0135] Here, as a comparative example, the results of double-pulse test evaluation using a conventional electronic module will be described. The conventional electronic module used here does not have any of the characteristic configurations of the present invention (Aspect 1: a configuration in which the surfaces of the first electrode and the second electrode are at different height positions, Aspect 2 to be described later: a configuration in which the first semiconductor element and the second semiconductor element are arranged such that the extending directions of a part of the first electrode and the other part of the second electrode are the same, Aspect 3 to be described later: a configuration in which the first semiconductor element and the second semiconductor element are arranged in different directions, Aspect 4 to be described later: a configuration in which the first cascode switch element and the second cascode switch element are arranged in different directions). Note that although the above-described conventional electronic module is an electronic module that does not have the characteristic configuration of the present invention, it has a configuration in which parasitic inductance is reduced as much as possible (the parasitic inductance is reduced to about 10 to 20% compared with the electronic modules described in Patent Documents 3, 4, and 5 above). Using such a comparative example, it is shown that the present invention has a remarkable parasitic inductance reduction effect.

[0136] FIG. 9 shows an equivalent circuit 150 of a conventional electronic module. The first semiconductor element 10 and the second semiconductor element 20 constitute a half-bridge circuit. The drain electrode 11d of the first semiconductor element 10 is connected to the power supply terminal 70. The source electrode 12s of the first semiconductor element 10 is connected to the drain electrode 21d of the second semiconductor element 20 and the output terminal 72.

[0137] The source electrode 22s of the second semiconductor element 20 is connected to the ground terminal 74. The capacitor is an external capacitor 30', and is connected to the power supply terminal 70 and the ground terminal 74. It is a circuit in which the external capacitor 30' is connected in parallel to the first semiconductor element 10 and the second semiconductor element 20 connected in series. Note that detection source electrodes 12sb, 12sb are also provided.

[0138] In the equivalent circuit 150 of the conventional electronic module shown in FIG. 9, the parasitic inductance is such that the portion connecting the source electrode 12s of the first semiconductor element 10 and the drain electrode 21d of the second semiconductor element 20 has a parasitic inductance L1, the portion connecting the drain electrode 11d of the first semiconductor element 10 and the external capacitor 30' has a parasitic inductance L2, and the portion connecting the source electrode 22s of the second semiconductor element 20 and the external capacitor 30' has a parasitic inductance L3.

[0139] FIG. 10 is a diagram obtained by simulating the switching waveforms of the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 in the equivalent circuit 150 of the conventional electronic module. In FIG. 10, the inductances L1, L2, and L3 in the equivalent circuit 150 of the conventional electronic module are obtained by simulation, and the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 as a transistor are simulated in the simulation block 140 of the double-pulse test circuit shown in FIG. 7(A), and the switching waveforms are measured at the switching waveform measurement timing.

[0140] When the first semiconductor element 10 and the second semiconductor element 20 are configured by transistors (for example, GaN HEMT), the inductances L1, L2, and L3 in the configuration of the equivalent circuit 150 of the conventional electronic module are, respectively, 3.35 nH for L1, 8.30 nH for L2, and 8.97 nH for L3 by simulation, which are higher compared to the example of Embodiment 2. The evaluation of the double-pulse test circuit is performed in the simulation block 140 shown in FIG. 7(A), with the external capacitor 30' being 0.01 μF and the external inductance being 10 nH. The inductance of the choke coil 142 is 50 μH.

[0141] As shown in Fig. 10, in the double-pulse test using the electronic module according to the comparative example, the maximum drain-source voltage VDS is 650V. As the first semiconductor element 10 and the second semiconductor element 20, there is no margin for the absolute maximum rated voltage between drain and source of 650V, and it can be seen that they cannot be used for the specification rating. Also, the surge voltage is, for example, about 250Vp-p even 180 ns after the switching waveform measurement timing, and sufficient attenuation is not seen, indicating that it is operationally unstable. This is also clear from the waveform of the drain current ID.

[0142] As described above, according to the present invention (Aspect 1), further reduction of inductance inside the electronic module is possible, and switching loss, surge voltage, and noise can be reduced when a circuit system is configured using the electronic module. Thereby, performance improvements such as the operation stability and reliability of the circuit system using the electronic module can be achieved.

[0143] Although the embodiments of the present invention (Aspect 1) have been described above, the present invention (Aspect 1) is not limited to the above-described embodiments, and can also be applied to an electronic module equipped with a plurality of semiconductor chips, and various modifications and applications are possible without departing from the gist of the present invention (Aspect 1).

[0144] (1) In each of the above-described embodiments, the present invention (Aspect 1) has been described using an electronic module having a capacitor, but the present invention (Aspect 1) is not limited thereto. For example, an electronic module having no capacitor (for example, an electronic module in which the capacitor is removed from the electronic module 130 according to Embodiment 2 and the mold resin is partially hollowed out at the capacitor mounting portion) can also be used. In this case, an external capacitor can be attached to the capacitor mounting position to configure an electronic module similar to the electronic module according to Embodiment 2.

[0145] (2) In each of the above-described embodiments, by providing the position adjustment member 60 between the second wiring pattern 42 and the second semiconductor element 20, or between the first wiring pattern 41 and the first semiconductor element 10, the height position of the surface of the second electrode or the surface of the first electrode is adjusted. However, the present invention (Aspect 1) is not limited to this. The present invention (Aspect 1) can adjust the height position of the surface of the second electrode or the surface of the first electrode by using the first semiconductor element and the second semiconductor element having different heights respectively.

[0146] [The present invention (Aspect 2)] FIG. 11 is a conceptual diagram of the electronic module A100 of the present invention (Aspect 2). The electronic module A100 of the present invention (Aspect 2) is a resin-sealed type electronic module. As shown in FIG. 1, it includes a first semiconductor element 10 having a plurality of first electrodes 11d, 12s, 13g, a second semiconductor element 20 having a plurality of second electrodes 21d, 22s, 23g, a capacitor 30, a first wiring pattern 41 on which the first semiconductor element 10 is mounted, a substrate 40 having a second wiring pattern 42 on which the second semiconductor element 20 is mounted and a third wiring pattern 43, and a plurality of electrical connection members 51, 52, 53.

[0147] In the electronic module A100 of the present invention (Aspect 2), a part 12s of the first electrode and the other part of the second electrode 21d are connected to the first wiring pattern 41, a part 22s of the second electrode and a part 31 of the capacitor 30 are connected to the second wiring pattern 42, and the other part 11d of the first electrode and the other part 32 of the capacitor 30 are connected to the third wiring pattern 43.

[0148] In the electronic module A100 of the present invention (Aspect 2), one of the plurality of electrical connection members (electrical connection member 51) connects a part 12s of the first electrode, the other part 21d of the second electrode, and the first wiring pattern 41. The first semiconductor element 10 and the second semiconductor element 20 are arranged such that the extending direction of a part 12s of the first electrode and the extending direction of the other part 21d of the second electrode are the same. Here, the "extending direction of the electrode" is used in a concept that includes the "arrangement direction of the individual electrodes" when the electrode is composed of a plurality of individual electrodes.

[0149] According to the electronic module A100 of the present invention (Aspect 2), since each wiring pattern, each semiconductor element, and each electrical connection member are arranged as described above, the length of the electrical connection member (particularly the one electrical connection member 51) can be shortened, and further reduction of inductance inside the electronic module A100 including portions other than the first electrical connection member 51 is possible. When a circuit system is configured using the electronic module A100, switching loss, surge voltage, and noise can be reduced. Thereby, performance improvements such as the operation stability and reliability of the circuit system using the electronic module can be achieved.

[0150] The connection portion between the first semiconductor element 10 and the second semiconductor element 20 is a potential portion that is extremely important from the viewpoint of operation stability in a circuit system having a bridge structure such as a half-bridge circuit. Reducing the inductance of the above connection points (the first electrode 12s, the second electrode 21d, the electrical connection member 51, the first wiring pattern 41) has a remarkable effect on reducing switching loss, surge voltage, and noise.

[0151] Note that the first semiconductor element 10 corresponds to the first semiconductor element in the present invention (Aspect 2). The second semiconductor element 20 corresponds to the second semiconductor element in the present invention (Aspect 2). The capacitor 30 corresponds to the capacitor in the present invention (Aspect 2). The substrate 40 corresponds to the substrate in the present invention (Aspect 2). The electrical connection members 51, 52, and 53 correspond to the electrical connection members in the present invention (Aspect 2). Among these, the electrical connection member 51 corresponds to the one electrical connection member in the present invention (Aspect 2). The plurality of first electrodes 11d, 12s, 13g correspond to the plurality of first electrodes in the present invention (Aspect 2). The plurality of second electrodes 21d, 22s, 23g correspond to the plurality of second electrodes in the present invention (Aspect 2).

[0152] Further, the first wiring pattern 41 corresponds to the first wiring pattern in the present invention (Aspect 2). The second wiring pattern 42 corresponds to the second wiring pattern in the present invention (Aspect 2). The third wiring pattern 43 corresponds to the third wiring pattern in the present invention (Aspect 2). A part 12s of the first electrode corresponds to a part of the first electrode in the present invention (Aspect 2). Another part 11d of the first electrode corresponds to another part of the first electrode in the present invention (Aspect 2). A part 22s of the second electrode corresponds to a part of the second electrode in the present invention (Aspect 2). Another part 21d of the second electrode corresponds to another part of the second electrode in the present invention (Aspect 2). A part 31 of the capacitor corresponds to a part of the capacitor in the present invention (Aspect 2). Another part 32 of the capacitor corresponds to another part of the capacitor in the present invention (Aspect 2).

[0153] There is also an increasing demand to increase the switching frequency from several hundreds of kHz in the conventional case to the several MHz band, and to increase the turn-on and turn-off speed by more than one digit. For this reason, expectations for compound semiconductors that can operate at high speed and with a large current are increasing. It is necessary for the first semiconductor element 10 and the second semiconductor element 20 to be made of materials that can handle high speeds.

[0154] The first semiconductor element 10 and the second semiconductor element 20 are made of semiconductors using silicon, gallium nitride, silicon carbide, or gallium oxide as materials, and the first semiconductor element 10 and the second semiconductor element 20 may be made of semiconductors of the same material or different materials, respectively.

[0155] As a result, in order to selectively configure with semiconductor elements having functions suitable for circuit applications (half-bridge circuits, totem-pole type power factor improvement circuits, etc.), it is possible to reduce switching losses, surge voltages, and noise when a circuit system is configured using an electronic module, and it is possible to improve performance such as the operating stability and reliability of the circuit system using the electronic module.

[0156] In particular, in a switching power supply system using a compound semiconductor capable of operating at high speed and high current, such as gallium nitride, silicon carbide, or gallium oxide, there are requirements such as wanting to increase the switching frequency to the several MHz band and wanting to increase the turn-on / off speed by more than one digit, and also requirements such as wanting to reduce switching losses, surge voltage, and noise during the operation of the circuit system. According to the electronic module A100 of the present invention (Aspect 2), particularly remarkable effects can be achieved.

[0157] Next, regarding the electrodes disposed on the surfaces of the first semiconductor element 10 and the second semiconductor element 20, since they are as described in the present invention (Aspect 1), the description will be omitted. Refer to the examples of the first electrode and the second electrode in FIG. 2 described above.

[0158] In this case, the drain electrodes 11d, 21d correspond to the drain electrodes in the present invention (Aspect 2). The source electrodes 12s, 22s correspond to the source electrodes in the present invention (Aspect 2). The gate electrodes 13g, 23g correspond to the gate electrodes in the present invention (Aspect 2).

[0159] Note that the equivalent circuit of the electronic module A100 is as described in the present invention (Aspect 1), so the description will be omitted. Refer to the equivalent circuit 120 in FIG. 4 described above. The equivalent circuits of the electronic modules A130 and A132 described later are the same.

[0160] In the present invention (Aspect 2), referring to the equivalent circuit 120 shown in FIG. 4 described above, the parasitic inductance L1 of the portion connecting the first semiconductor element 10 and the second semiconductor element 20 is set to be smaller than the parasitic inductance L2 of the portion connecting the first semiconductor element 10 and the capacitor 30, and the parasitic inductance L3 of the portion connecting the second semiconductor element 20 and the capacitor 30. As a result, further reduction of inductance inside the electronic module 100 including the electrical connection member 51 becomes possible.

[0161] [Embodiment 3] FIG. 12 is a diagram showing the electronic module A130 according to Embodiment 3. FIG. 13 is an enlarged perspective view of the main part of the electronic module A130 according to Embodiment 3. FIG. 13 shows an enlarged view of the region A surrounded by the dashed line in FIG. 12. Embodiment 3 is a specific embodiment of the equivalent circuit 120 shown in FIG. 4 described above.

[0162] As shown in FIG. 12, the electronic module A130 according to Embodiment 3 includes a first semiconductor element 10 having a plurality of first electrodes 11d, 12s, 13g, a second semiconductor element 20 having a plurality of second electrodes 21d, 22s, 23g, a capacitor 30, a first wiring pattern 41 on which the first semiconductor element 10 is mounted, a second wiring pattern 42 on which the second semiconductor element 20 is mounted, a substrate 40 having a third wiring pattern 43, and a plurality of electrical connection members 51, 52, 53. The substrate 40 uses, for example, a DCB substrate in which a copper circuit board is directly bonded to a ceramic substrate.

[0163] In the electronic module A130 according to Embodiment 3, a part 12s of the first electrode and the other part 21d of the second electrode are connected to the first wiring pattern 41, a part 22s of the second electrode and a part 31 of the capacitor 30 are connected to the second wiring pattern 42, and the other part 11d of the first electrode and the other part 32 of the capacitor 30 are connected to the third wiring pattern 43.

[0164] In the electronic module A130 according to Embodiment 3, a part 12s (source electrode 12s) of the first electrode, the other part 21d (drain electrode 21d) of the second electrode, and the first wiring pattern 41 are connected by one of the plurality of electrical connection members 51, 52, 53. The first semiconductor element 10 and the second semiconductor element 20 are arranged such that the extending direction (arrangement direction) of the part 12s of the first electrode and the extending direction (arrangement direction) of the other part 21d of the second electrode are the same.

[0165] In the electronic module A130 according to Embodiment 3, the fact that the first semiconductor element 10 and the second semiconductor element 20 are arranged in the same direction means that the arrangement direction of the drain electrode 11d formed by a plurality of individual electrodes of the first semiconductor element 10 and the source electrode 12s formed by a plurality of individual electrodes is the same as the arrangement direction of the drain electrode 21d formed by a plurality of electrodes of the second semiconductor element 20 and the source electrode 22s formed by a plurality of electrodes, as shown in FIG. 12.

[0166] According to the electronic module A130 according to Embodiment 3, since each wiring pattern, each semiconductor element, and each electrical connection member are arranged as described above, the length of the first electrical connection member 51 that connects the other part 21d of the second electrode, a part 12s of the first electrode, and the first wiring pattern 41 can be shortened. For this reason, further reduction of inductance inside the electronic module A130 is possible. In addition, when a circuit system is configured using the electronic module A130, switching loss, surge voltage, and noise can be reduced. Thereby, performance improvements such as the operation stability and reliability of the circuit system using the electronic module can be achieved.

[0167] In the electronic module A130 according to Embodiment 3, the first semiconductor element mounting region in the first wiring pattern 41, the second semiconductor element mounting region in the second wiring pattern 42, and a part of the third wiring pattern 43 are arranged to be parallel to each other. Thereby, further reduction of inductance inside the electronic module A130 is possible.

[0168] In the electronic module A130 according to Embodiment 3, the second wiring pattern 42 has a first capacitor connection portion 34 to which a part 31 of the capacitor 30 is connected, and the third wiring pattern 43 has a second capacitor connection portion 35 to which the other part 32 of the capacitor 30 is connected. The planar shapes of the second wiring pattern 42 and the third wiring pattern 43, and the formation positions of the first capacitor connection portion 34 and the second capacitor connection portion 35 are defined such that the wiring route from a part 22s of the second electrode through the second wiring pattern 42, the capacitor 30, and the third wiring pattern 43 to the other part 11d of the first electrode is the shortest. Resists are formed around the first capacitor connection portion 34 and the second capacitor connection portion 35, respectively.

[0169] A part 31 of the capacitor and the first capacitor connection portion 34, and the other part 32 of the capacitor and the second capacitor connection portion 35 are connected in the portions surrounded by these resists, respectively. That is, with the configuration as in Embodiment 3, the wiring route from a part 22s of the second electrode through the second wiring pattern 42, the capacitor 30, and the third wiring pattern 43 to the other part 11d of the first electrode is the shortest. When the electronic module A130 is applied to a circuit system having a bridge structure such as a half-bridge circuit, for example, the snubber effect is maximally exerted, and remarkable effects are achieved in reducing switching loss, surge voltage, and noise.

[0170] Note that the first capacitor connection portion 34 corresponds to the first capacitor connection portion in the present invention (Aspect 2). The second capacitor connection portion 35 corresponds to the second capacitor connection portion in the present invention (Aspect 2).

[0171] As shown in FIG. 12, on one side of the electronic module A130, a power supply terminal 70, an output terminal 72, and a ground terminal 74 are arranged, and on the other side, a first control signal terminal 80, a first detection signal terminal 81, a second detection signal terminal 82, and a second control signal terminal 83 are arranged. The first control signal terminal 80 is connected to a fourth wiring pattern 44 formed on the surface of the substrate 40, and the first detection signal terminal 81 is connected to a fifth wiring pattern 45 formed on the surface of the substrate 40. The second detection signal terminal 82 is connected to a sixth wiring pattern 46 formed on the surface of the substrate 40, and the second control signal terminal 83 is connected to a seventh wiring pattern 47 formed on the surface of the substrate 40.

[0172] The first gate electrode 13g is connected to the fourth wiring pattern 44 by a fifth electrical connection member 55, and the first detection source electrode 12sb is connected to the fifth wiring pattern 45 by a sixth electrical connection member 56. The second detection source electrode 22sb is connected to the sixth wiring pattern 46 by a seventh electrical connection member 57, and the second gate electrode 23g is connected to the seventh wiring pattern 47 by an eighth electrical connection member 58.

[0173] In the electronic module A130 according to Embodiment 3, the parasitic inductances L1, L2, and L3 of each part shown in the equivalent circuit 120 of FIG. 4 described above depend on the structure of the electrical connection members and wiring patterns shown in FIG. 12 and are obtained by simulation. As a result of simulation considering the electrical connection members and the structure, L1 was 0.54 nH, L2 was 1.63 nH, and L3 was 1.89 nH. It can be seen that these values are more than one digit lower compared with the above-described conventional technologies (Patent Documents 3, 4, 5, etc.).

[0174] As shown in FIG. 12, the shape of the first wiring pattern 41 is based on an L shape, the width of the mounting region of the first semiconductor element 10 is 3.5 mm, and the width of the output terminal connection region is 6.5 mm. The shape of the second wiring pattern 42 is based on an L shape, the width of the mounting region of the second semiconductor element 20 is 4.1 mm, and the width of the ground terminal connection region is 9.0 mm. The dimensions of the third wiring pattern 43 are in a rectangular shape with a horizontal length of 8.3 mm and a vertical length of 3.5 mm. Also, the wire diameter is φ200 μm.

[0175] In the electronic module A130 according to Embodiment 3, the parasitic inductance of the portion connecting the first semiconductor element 10 and the second semiconductor element 20 is smaller than the parasitic inductance of the portion connecting the first semiconductor element 10 and the capacitor 30 and the parasitic inductance of the portion connecting the second semiconductor element 20 and the capacitor 30.

[0176] Reducing the inductance of the connection portion between the first semiconductor element 10 and the second semiconductor element 20 is an extremely important potential portion from the viewpoint of operation stability in a circuit system having a bridge structure such as a half-bridge circuit. Reducing the inductance of the above connection points (the first electrode 12s, the second electrode 21d, the electrical connection member 51, the first wiring pattern 41) has a remarkable effect on reducing switching loss, surge voltage, and noise.

[0177] Thereby, the electronic module A130 according to Embodiment 3 can improve performance such as the operation stability and reliability of the circuit system.

[0178] The electronic module A130 according to Embodiment 3 has a ground terminal 74, a power supply terminal 70, and an output terminal 72 on one side, and has a control signal terminal on the other side. The first semiconductor element 10 and the second semiconductor element 20 are arranged parallel or perpendicular to the arrangement direction of the ground terminal 74, the power supply terminal 70, and the output terminal 72. Thereby, the wiring pattern connected to the power supply terminal 70, the ground terminal 74, and the output terminal 72, through which a high voltage and a large current flow, can be separated from the wiring pattern for control signals, and the influence of noise can be reduced.

[0179] In the electronic module A130, the first semiconductor element 10 and the second semiconductor element 20 are arranged parallel to the arrangement direction of the ground terminal 74, the power supply terminal 70, and the output terminal 72. On one side of the electronic module A130, the power supply terminal 70, the output terminal 72, and the ground terminal 74 are arranged, and on the other side, the first control signal terminal 80, the first detection signal terminal 81, the second detection signal terminal 82, and the second control signal terminal 83 are arranged.

[0180] The first control signal terminal 80 is connected to the fourth wiring pattern 44 formed on the surface of the substrate 40, and the first detection signal terminal 81 is connected to the fifth wiring pattern 45 formed on the surface of the substrate 40. The second detection signal terminal 82 is connected to the sixth wiring pattern 46 formed on the surface of the substrate 40, and the second control signal terminal 83 is connected to the seventh wiring pattern 47 formed on the surface of the substrate 40.

[0181] The first gate electrode 13g is connected to the fourth wiring pattern 44 by the fifth electrical connection member 55, and the first detection source electrode 12sb is connected to the fifth wiring pattern 45 by the sixth electrical connection member 56. The second detection source electrode 22sb is connected to the sixth wiring pattern 46 by the seventh electrical connection member 57, and the second gate electrode 23g is connected to the seventh wiring pattern 47 by the eighth electrical connection member 58.

[0182] The first semiconductor element 10 and the second semiconductor element 20 may be arranged perpendicular to the arrangement direction of the ground terminal 74, the power supply terminal 70, and the output terminal 72. Even in this case, Figure 12 similar to the region A surrounded by the broken line in, the mounting region of the first semiconductor element 10 in the first wiring pattern 41, the mounting region of the second semiconductor element 20 in the second wiring pattern 42, and a part of the third wiring pattern 43 are arranged to be parallel to each other.

[0183] As a result, the connection distances of the first semiconductor element 10, the second semiconductor element 20, the first wiring pattern 41, the second wiring pattern 42, and the third wiring pattern 43 can be arranged to be the shortest, enabling further reduction of inductance inside the electronic module A130.

[0184] The first electrical connection member 51, the second electrical connection member 52, and the third electrical connection member 53 are preferably linear or plate-shaped. Thereby, an electrical connection member with low parasitic inductance can be applied, and reduction of parasitic inductance can be achieved. Embodiment 3 is an embodiment in the case where the electrical connection member is linear. Next, an embodiment in the case where some of the electrical connection members are linear and the other electrical connection members are plate-shaped will be shown.

[0185] [Embodiment 4] FIG. 14 is an enlarged perspective view of a main part showing the electronic module A132 according to Embodiment 4. Different from the electronic module A130 according to Embodiment 3, the second electrical connection member 52 in the electronic module A132 according to Embodiment 4 is a plate-shaped electrical connection member. Otherwise, it is the same as the electronic module A130 according to Embodiment 3. The plate-shaped second electrical connection member 52 has an area that covers the three source electrodes 22s and connects the source electrodes 22s and the second wiring pattern 42.

[0186] In the electronic module A132 according to Embodiment 4, the parasitic inductances L1, L2, and L3 of each part shown in the equivalent circuit of FIG. 4 described above depend on the shapes of the electrical connection members and wiring patterns shown in FIG. 14 and are obtained by simulation. As a result of simulation considering these, L1 was 0.54 nH, L2 was 1.63 nH, and L3 was 1.07 nH. By using the plate-shaped second electrical connection member 52, the electronic module A132 according to Embodiment 4 is 0.82 nH lower than the value of L3 (1.89 nH) in the case of the electronic module A130 according to Embodiment 3.

[0187] <Double Pulse Test> FIG. 15 is a diagram showing a double pulse test for explanation. FIGS. 15(A) and 15(B) are the same as FIGS. 7(A) and 7(B) described in the present invention (Aspect 1), so the description thereof is omitted. FIG. 15(C) is a reproduction of the parasitic inductances L1, L2, and L3 in the electronic module A130 according to the above-described Embodiment 3, the electronic module A132 according to Embodiment 4, and a conventional electronic module.

[0188] FIG. 16 is a diagram obtained by simulating the switching waveforms of the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 in the electronic module A130 according to Embodiment 3. In FIG. 16, the inductances L1, L2, and L3 (see FIG. 4 described above) in the electronic module A130 according to Embodiment 3 are obtained by simulation, and the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 as a transistor are simulated by the simulation block 140 of the double pulse test circuit shown in FIG. 15(A), and the switching waveforms are measured at the switching waveform measurement timing. The parasitic inductances L1, L2, and L3 of the electronic module A130 obtained by simulation are 0.54 nH, 1.63 nH, and 1.89 nH, respectively, as described above, and the simulation was performed using these values in the double pulse test circuit shown in FIG. 15(A).

[0189] Note that the capacitor 30 mounted inside the electronic module A130 is 0.01 μF, and the parasitic inductance of the choke coil 142 connected outside the electronic module A130 is 50 μH.

[0190] As shown in FIG. 16, in the double-pulse test using the electronic module A130 according to Embodiment 3, the maximum drain-source voltage is about 500V. As the first semiconductor element 10 and the second semiconductor element 20, if the absolute maximum rating voltage between the drain and the source is 650V, it can be seen that a sufficient margin is ensured with respect to the specification rating. Also, the surge voltage has decayed to about 10Vp-p or less, for example, 180 ns after the switching waveform measurement timing, indicating that it is operationally stable. This is also clear from the waveform of the drain current ID.

[0191] FIG. 17 is a diagram showing the switching waveforms of the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 in the electronic module A132 according to Embodiment 4, obtained by simulation. In FIG. 17, the inductances L1, L2, L3 (see FIG. 4 described above) in the electronic module A132 according to Embodiment 4 are obtained by simulation, and the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 as a transistor are simulated in the simulation block 140 of the double-pulse test circuit shown in FIG. 15(A), and the switching waveforms are measured at the switching waveform measurement timing. The parasitic inductances L1, L2, L3 of the electronic module A132 obtained by simulation are 0.54 nH, 1.63 nH, and 1.07 nH, respectively, and the simulation in the double-pulse test circuit shown in FIG. 15(A) was performed using these values.

[0192] Note that, similar to the case of the electronic module A130, the capacitor 30 mounted inside the electronic module A132 is 0.01 μF, and the parasitic inductance of the choke coil 142 connected outside the electronic module A132 is 50 μH.

[0193] As shown in FIG. 17, in the double pulse test using the electronic module A132 according to Embodiment 4, the maximum drain-source voltage is approximately 500 V, which is slightly lower than that of the electronic module A130. It can be seen that when the absolute maximum rated voltage between the drain and source of the first semiconductor element 10 and the second semiconductor element 20 is 650 V, a sufficient margin is ensured with respect to the specification rating. Also, the surge voltage has decayed to about 10 Vp-p or less, for example, 180 ns after the switching waveform measurement timing, indicating that it is operationally stable. This is also clear from the waveform of the drain current ID.

[0194] Note that the comparative example is the same as the comparative example described in the present invention (Aspect 1). Therefore, the description here is omitted.

[0195] As described above, according to the present invention (Aspect 2), further reduction of inductance inside the electronic module is possible, and switching loss, surge voltage, and noise can be reduced when a circuit system is configured using the electronic module of the present invention (Aspect 2). Thereby, performance improvements such as the operation stability and reliability of the circuit system using the electronic module can be achieved.

[0196] Although the embodiments of the present invention (Aspect 2) have been described above, the present invention (Aspect 2) is not limited to the above-described embodiments, and can also be applied to an electronic module on which a plurality of semiconductor chips are mounted, and various modifications and applications are possible without departing from the gist of the present invention (Aspect 2).

[0197] (1) In the above-described Embodiments 3 and 4, the present invention has been described using an electronic module having a capacitor. However, the present invention (Aspect 2) is not limited thereto. For example, an electronic module having no capacitor (for example, an electronic module in which a capacitor is removed from the electronic module A130 according to Embodiment 3 or the electronic module A132 according to Embodiment 4, and the mold resin is partially hollowed out at the capacitor mounting portion) can also be used. In this case, by attaching an external capacitor to the capacitor mounting position, an electronic module similar to the electronic modules according to Embodiments 3 and 4 can be configured.

[0198] (2) In the above-described Embodiments 3 and 4, the present invention (Aspect 1) has been described using a half-bridge circuit. However, the present invention (Aspect 1) is not limited thereto. The present invention (Aspect 1) can be applied to circuits other than the half-bridge circuit.

[0199] (3) In the above-described Embodiments 3 and 4, the present invention (Aspect 1) has been described using rectangular semiconductor elements as the first semiconductor element and the second semiconductor element. However, the present invention (Aspect 1) is not limited thereto. For example, square semiconductor elements can be used for one or both of the first semiconductor element and the second semiconductor element.

[0200] [The present invention (Aspect 3)] FIG. 18 is a conceptual diagram of an electronic module B100 of the present invention (Aspect 3). The electronic module B100 of the present invention (Aspect 3) is a resin-sealed electronic module. As shown in FIG. 18, it includes a first semiconductor element 10 having a plurality of first electrodes 11d, 12s, 13g, a second semiconductor element 20 having a plurality of second electrodes 21d, 22s, 23g, a capacitor 30, a substrate 40 having a first wiring pattern 41 on which the first semiconductor element 10 is mounted, a second wiring pattern 42 on which the second semiconductor element 20 is mounted, and a third wiring pattern 43, a first electrical connection member 51, a second electrical connection member 52, a third electrical connection member 53, and a fourth electrical connection member 54.

[0201] In the electronic module B100 of the present invention (Aspect 3), a part 12s of the first electrodes 11d, 12s, 13g is connected to the first wiring pattern 41 by the first electrical connection member 51, and the other part 21d of the second electrodes 21d, 22s, 23g is connected to the first wiring pattern 41 by the fourth electrical connection member 54. A part 22s of the second electrode is connected to the second wiring pattern 42 by the second electrical connection member 52, and a part 31 of the capacitor 30 is connected to the second wiring pattern 42. The other part 11d of the first electrodes 11d, 12s, 13g is connected to the third wiring pattern 43 by the third electrical connection member 53, and the other part 32 of the capacitor 30 is connected to the third wiring pattern 43.

[0202] In the electronic module B100 of the present invention (Aspect 3), the first semiconductor element 10 and the second semiconductor element 20 are arranged in different directions. Here, the phrase "the first semiconductor element 10 and the second semiconductor element 20 are arranged in different directions" means that "the first semiconductor element 10 and the second semiconductor element 20 are arranged such that the extending directions of a part 12s of the first electrode, the extending direction of the other part 13gs of the first electrode, a part 22s of the second electrode, and the extending direction of a part 12s of the first electrode are different". Here, the "extending direction of the electrode" includes the "array direction of the individual electrodes" when the electrode is composed of a plurality of individual electrodes.

[0203] According to the electronic module B100 of the present invention (Aspect 3), since each semiconductor element 10, 20, the capacitor 30, each wiring pattern 41, 42, 43, and each electrical connection member 51, 52, 53, 54 are arranged as described above, the lengths of the electrical connection members 51, 52, 53, 54 can be shortened. Further, it is possible to further reduce the inductance inside the electronic module B100 including parts other than each electrical connection member. Therefore, it is possible to reduce the inductance inside the electronic module, and it is possible to reduce the switching loss, surge voltage, and noise when a circuit system is configured using the electronic module. As a result, it is possible to improve the performance such as the operation stability and reliability of the circuit system using the electronic module.

[0204] Note that the first semiconductor element 10 corresponds to the first semiconductor element in the present invention (Aspect 3). The second semiconductor element 20 corresponds to the second semiconductor element in the present invention (Aspect 3). The capacitor 30 corresponds to the capacitor in the present invention (Aspect 3). The substrate 40 corresponds to the substrate in the present invention (Aspect 3). The electrical connection members 51, 52, 53, 54 correspond to the electrical connection members in the present invention (Aspect 3). The plurality of first electrodes 11d, 12s, 13g correspond to the plurality of first electrodes in the present invention (Aspect 3). The plurality of second electrodes 21d, 22s, 23g correspond to the plurality of second electrodes in the present invention (Aspect 3).

[0205] Also, the first wiring pattern 41 corresponds to the first wiring pattern in the present invention (Aspect 3). The second wiring pattern 42 corresponds to the second wiring pattern in the present invention (Aspect 3). The third wiring pattern 43 corresponds to the third wiring pattern in the present invention (Aspect 3). A part 12s of the first electrode corresponds to a part of the first electrode in the present invention (Aspect 3). The other part 11d of the first electrode corresponds to the other part of the first electrode in the present invention (Aspect 3). A part 22s of the second electrode corresponds to a part of the second electrode in the present invention (Aspect 3). The other part 21d of the second electrode corresponds to the other part of the second electrode in the present invention (Aspect 3). A part 31 of the capacitor corresponds to a part of the capacitor in the present invention (Aspect 3). The other part 32 of the capacitor corresponds to the other part of the capacitor in the present invention (Aspect 3).

[0206] There is also an increasing demand to increase the switching frequency from several hundred kHz in the conventional case to the several MHz band, and to increase the turn-on / turn-off speed by more than one digit. For this reason, expectations for compound semiconductors that can operate at high speed and with a large current are increasing. For this reason, it is necessary to use materials for the first semiconductor element 10 and the second semiconductor element 20 that can handle high speeds.

[0207] The first semiconductor element 10 and the second semiconductor element 20 are made of a semiconductor using silicon, gallium nitride, silicon carbide, or gallium oxide as a material, and the first semiconductor element 10 and the second semiconductor element 20 may be made of semiconductors of the same material or different materials, respectively.

[0208] Thus, in order to selectively configure with semiconductor elements having functions suitable for circuit applications (such as half-bridge circuits and totem-pole type power factor correction circuits), it is possible to reduce switching losses, surge voltages, and noise when a circuit system is configured using an electronic module, and it is possible to improve performance such as the operation stability and reliability of the circuit system using the electronic module.

[0209] In particular, in a switching power supply system using a compound semiconductor that can operate at high speed and with a large current, such as gallium nitride, silicon carbide, or gallium oxide, there are requirements such as wanting to increase the switching frequency to the several MHz band and wanting to increase the turn-on / off speed by more than one digit, and requirements such as wanting to reduce switching losses, surge voltages, and noise during the operation of the circuit system. According to the electronic module B100 of the present invention (Aspect 3), particularly remarkable effects can be achieved.

[0210] Next, the electrodes disposed on the surfaces of the first semiconductor element 10 and the second semiconductor element 20 will be described.

[0211] FIG. 19 is a diagram showing examples of the first electrode and the second electrode disposed on the surfaces of the first semiconductor element 10 and the second semiconductor element 20.

[0212] The first semiconductor element 10 and the second semiconductor element 20 are transistors or diodes. In the case of transistors, it is preferable that drain electrodes 11d, 21d are disposed on one side of the same surface of each of the first semiconductor element 10 or the second semiconductor element 20, and source electrodes 12s, 22s are disposed on the other side. FIG. 19 is an example of a transistor, and the drain electrodes 11d, 21d and the source electrodes 12s, 22s are each composed of a plurality of electrodes. For example, in the example shown in FIG. 19, there are three. The gate electrodes 13g, 23g are disposed at the right end portions of the first semiconductor element 10 or the second semiconductor element 20, and the detection source electrodes 12sb, 22sb are disposed between the gate electrodes 13g, 23g and the source electrodes 12s, 22s.

[0213] In the case of a diode, it is preferable that a cathode electrode is disposed on one side of the same surface of each of the first semiconductor element 10 and the second semiconductor element 20, and an anode electrode is disposed on the other side.

[0214] By adopting such a horizontal configuration, a semiconductor element having a function suitable for a circuit application (such as a half-bridge circuit or a totem-pole type power factor correction circuit) can be selectively used. Therefore, when a circuit system is configured using an electronic module, switching loss, surge voltage, and noise can be reduced, and performance such as the operation stability and reliability of the circuit system using the electronic module can be improved.

[0215] In addition, in the case where the first semiconductor element 10 and the second semiconductor element 20 are transistors, since the gate electrodes 13g, 23g and the detection source electrodes 12sb, 22sb are formed in the vicinity of the source electrodes 12s, 22s as shown in FIG. 19, the parasitic inductance of the gate-source wiring loop can be reduced, and it is preferable in terms of improving performance such as the operation stability and reliability of the circuit system.

[0216] Specific examples of the horizontal configuration include a case where a GaN transistor is formed on a silicon substrate or a case where a GaN transistor is formed on a sapphire substrate.

[0217] The drain electrodes 11d, 21d correspond to the drain electrodes in the present invention (Aspect 3). The source electrodes 12s, 22s correspond to the source electrodes in the present invention (Aspect 3). The gate electrodes 13g, 23g correspond to the gate electrodes in the present invention (Aspect 3).

[0218] The first semiconductor element 10 and the second semiconductor element 20 are preferably used in a half-bridge circuit. Thereby, the parasitic inductance of the half-bridge circuit can be reduced, and an electronic module B100 of a stable half-bridge circuit can be provided.

[0219] Note that since the equivalent circuit of the electronic module B100 is as described in the present invention (Aspect 1), the description thereof is omitted. Refer to the equivalent circuit 120 of FIG. 4 described above. The same applies to the equivalent circuits of the electronic modules B132 and B134 described later.

[0220] Note that as shown in FIG. 20 described later, the second wiring pattern 42 has a first capacitor connection portion 34 to which a part 31 of the capacitor is connected, and the third wiring pattern 43 has a second capacitor connection portion 35 to which the other part 32 of the capacitor is connected. The planar shapes of the second wiring pattern 42 and the third wiring pattern 43, the mounting position of the second semiconductor element 20, and the formation positions of the first capacitor connection portion 34 and the second capacitor connection portion 35 are defined such that the wiring route from a part 22s of the second electrode through the second electrical connection member 52, the second wiring pattern 42, the capacitor 30, the third wiring pattern 43, and the third electrical connection member 53 to the other part 11d of the first electrode is the shortest. Resists are formed around the first capacitor connection portion 34 and the second capacitor connection portion 35, respectively.

[0221] A part 31 of the capacitor and the first capacitor connection portion 34, and the other part 32 of the capacitor and the second capacitor connection portion 35 are connected in the portions surrounded by these resists, respectively. With such a configuration, the capacitor 30 is connected to the first semiconductor element 10 and the second semiconductor element 20 in the closest proximity. When the electronic module B130 is applied to a circuit system having a bridge structure such as a half-bridge circuit, for example, the snubber effect is maximally exerted, and a remarkable effect is achieved in reducing switching loss, surge voltage, and noise.

[0222] [Embodiment 5] FIG. 20 is a diagram showing the electronic module B130 according to Embodiment 5. It is a specific embodiment of the equivalent circuit 120 shown in FIG. 4 described above.

[0223] As shown in FIG. 20, the electronic module B130 according to Embodiment 5 includes a first semiconductor element 10 having a plurality of first electrodes 11d, 12s, 13g, a second semiconductor element 20 having a plurality of second electrodes 21d, 22s, 23g, a capacitor 30, a substrate 40 having a first wiring pattern 41 on which the first semiconductor element 10 is mounted, a second wiring pattern 42 on which the second semiconductor element 20 is mounted, and a third wiring pattern 43, a first electrical connection member 51, a second electrical connection member 52, a third electrical connection member 53, and a fourth electrical connection member 54. The substrate 40 uses, for example, a DCB substrate in which a copper circuit board is directly bonded to a ceramic substrate.

[0224] In the electronic module B130 according to Embodiment 5, a part 12s of the first electrode is connected to the first wiring pattern 41 by the first electrical connection member 51, and the other part 21d of the second electrode is connected to the first wiring pattern 41 by the fourth electrical connection member 54. A part 22s of the second electrode is connected to the second wiring pattern 42 by the second electrical connection member 52, and a part 31 of the capacitor 30 is connected to the second wiring pattern 42. The other part 11d of the first electrode is connected to the third wiring pattern 43 by the third electrical connection member 53, and the other part 32 of the capacitor 30 is connected to the third wiring pattern 43.

[0225] In the electronic module B130 according to Embodiment 5, the first semiconductor element and the second semiconductor element are arranged in different directions. Here, the statement that "the first semiconductor element 10 and the second semiconductor element 20 are arranged in different directions" means that, as described above, "the first semiconductor element 10 and the second semiconductor element 20 are arranged such that the extending directions of a part 12s of the first electrode, the other part 11d of the first electrode, a part 22s of the second electrode, and the other part 11d of the second electrode are different". Here, the "extending direction of the electrode" includes the "array direction of the individual electrodes" when the electrode is composed of a plurality of individual electrodes.

[0226] By adopting the above configuration, the lengths of the first electrical connection member 51, the second electrical connection member 52, the third electrical connection member 53, and the fourth electrical connection member 54 can be shortened, and further reduction of inductance inside the electronic module 130 including parts other than the first electrical connection member 51, the second electrical connection member 52, the third electrical connection member 53, and the fourth electrical connection member 54 becomes possible. Also, when a circuit system is configured using the electronic module B130, switching loss, surge voltage, and noise can be reduced.

[0227] The first wiring pattern 41 has a shape based on an L shape, and the second wiring pattern 42 and the third wiring pattern 43 have shapes based on rectangles. The third wiring pattern 43 is arranged surrounded by the first wiring pattern 41 and the second wiring pattern 42 on three sides. Thereby, the second wiring pattern 42 and the third wiring pattern 43 can be arranged adjacent to the first wiring pattern 41. Also, because the first wiring pattern 41 has a shape based on an L shape, it can be directly connected to the output terminal 72 of the electronic module B130.

[0228] Referring to the main part A surrounded by the broken line in FIG. 20, the first semiconductor element 10 is arranged in a region adjacent to the second wiring pattern 42 and the third wiring pattern 43 in the first wiring pattern 41, and the other part 11d of the first electrode is arranged to be parallel and close to the third wiring pattern 43. The second semiconductor element 20 is arranged in a region adjacent to the first wiring pattern 41 in the second wiring pattern 42, and the other part 21d of the second electrode is arranged to be parallel and close to the first wiring pattern 41. The capacitor 30 is arranged to be connected to the second wiring pattern 42 and the third wiring pattern 43 in a region close to the second semiconductor element 20.

[0229] Since the other part 11d of the first electrode of the first semiconductor element 10 is connected to the third wiring pattern 43 by the third electrical connection member 53, it is arranged close to the third wiring pattern 43, the third electrical connection member 53 can be shortened, and the parasitic inductance can be reduced. Further, in the first semiconductor element 10, a part 12s of the first electrode is connected to the first wiring pattern 41 by the first electrical connection member 51.

[0230] Furthermore, since the first wiring pattern 41 is connected to the other part 21d of the second electrode via the fourth electrical connection member 54, by arranging the first semiconductor element 10 at a position close to the second wiring pattern 42, the distance between the part 12s of the first electrode and the other part 21d of the second electrode can be shortened, and the parasitic inductance can be reduced. Note that "close" includes being at a close distance adjacent to each other, and "adjacent" means being in a state of being arranged next to each other.

[0231] In the electronic module B130, a power supply terminal 70, an output terminal 72, and a ground terminal 74 are arranged on one side, and a first control signal terminal 80, a first detection signal terminal 81, a second control signal terminal 82, and a second detection signal terminal 83 are arranged on the other side.

[0232] The first control signal terminal 80 is connected to the fourth wiring pattern 44 formed on the surface of the substrate 40, and the first detection signal terminal 81 is connected to the fifth wiring pattern 45 formed on the surface of the substrate 40. The second control signal terminal 82 is connected to the sixth wiring pattern 46 formed on the surface of the substrate 40, and the second detection signal terminal 83 is connected to the seventh wiring pattern 47 formed on the surface of the substrate 40.

[0233] The first gate electrode 13g is connected to the fourth wiring pattern 44 by the fifth electrical connection member 55, and the first detection source electrode 12sb is connected to the fifth wiring pattern 45 by the sixth electrical connection member 56. The second gate electrode 23g is connected to the sixth wiring pattern 46 by the seventh electrical connection member 57, and the second detection source electrode 22sb is connected to the seventh wiring pattern 47 by the eighth electrical connection member 58.

[0234] In the electronic module B130 according to Embodiment 5, the parasitic inductances L1, L2, and L3 of the respective parts shown in the equivalent circuit of FIG. 4 described above depend on the structure of the electrical connection members and wiring patterns shown in FIG. 20 and are obtained by simulation.

[0235] As shown in FIG. 20, the first wiring pattern 41 has a shape based on an L shape, the width of the mounting region of the first semiconductor element 10 is 5.1 mm, and the width of the connection region of the output terminal 72 is 6.5 mm. The second wiring pattern 42 has a shape based on a rectangle, and the width of the connection region of the ground terminal 74 is 10.0 mm. The third wiring pattern 43 has a shape based on a rectangle and is 7.3 mm in width and 5.4 mm in length. Also, the wire diameter is φ200 μm.

[0236] As a result of simulation considering these wiring patterns and electrical connection members, etc., L1 was 1.57 nH, L2 was 1.31 nH, and L3 was 0.85 nH. It can be seen that these values are one digit or more lower compared with the above-described conventional technologies (Patent Documents 3, 4, 5, etc.).

[0237] The first electrical connection member 51, the second electrical connection member 52, the third electrical connection member 53, and the fourth electrical connection member 54 are preferably linear or plate-like electrical connection members. Thereby, an electrical connection member with a small parasitic inductance can be applied, and reduction of the parasitic inductance can be achieved. In Embodiment 5, an example in which all the electrical connection members are linear was shown. Next, Embodiment 6 in the case where some of the electrical connection members are linear and plate-like will be shown.

[0238] [Embodiment 6] FIG. 21 is an enlarged perspective view of the main part of the electronic module B132 according to Embodiment 6. FIG. 21 shows an enlarged view of a region corresponding to the region A surrounded by the dashed line in FIG. 20. As shown in FIG. 21, the electronic module B132 according to Embodiment 6 is different from the electronic module B130 according to Embodiment 5 in that the first electrical connection member 51 and the fourth electrical connection member 54 are plate-shaped electrical connection members. Otherwise, it is the same as the electronic module B130 according to Embodiment 5. The plate-shaped first electrical connection member 51 has an area covering the three source electrodes 12s and connects the source electrodes 12s and the first wiring pattern 41. The plate-shaped fourth electrical connection member 54 has an area covering the three drain electrodes 21d and connects the drain electrodes 21d and the first wiring pattern 41.

[0239] In the electronic module B132 according to Embodiment 6, the parasitic inductances L1, L2, and L3 of each part shown in the equivalent circuit of FIG. 4 described above depend on the shapes of the electrical connection members and wiring patterns shown in FIG. 21 and are obtained by simulation. As a result of simulation considering these, L1 was 1.10 nH, L2 was 1.31 nH, and L3 was 0.85 nH. Due to the plate-shaped second electrical connection member 52 and the third electrical connection member 53, it is 0.47 nH lower than the value of L1 of 1.57 nH shown in the electronic module B130 according to Embodiment 5.

[0240] [Embodiment 7] FIG. 22 is an enlarged perspective view of the main part of the electronic module B134 according to Embodiment 7. FIG. 22 shows an enlarged view of a region corresponding to the region A surrounded by the dashed line in FIG. 20. As shown in FIG. 22, the electronic module B134 according to Embodiment 7 is different from the electronic module B130 according to Embodiment 5 in that all of the first electrical connection member 51 to the fourth electrical connection member 54 are plate-shaped electrical connection members. Otherwise, it is the same as the electronic module B130 according to Embodiment 5.

[0241] The plate-shaped third electrical connection member 53 has an area that covers the three drain electrodes 11d and connects the drain electrodes 11d and the third wiring pattern 43. The plate-shaped first electrical connection member 51 has an area that covers the three source electrodes 12s and connects the source electrodes 12s and the first wiring pattern 41. The plate-shaped fourth electrical connection member 54 has an area that covers the three drain electrodes 21d and connects the drain electrodes 21d and the first wiring pattern 41. The plate-shaped second electrical connection member 52 has an area that covers the three source electrodes 22s and connects the source electrodes 22s and the second wiring pattern 42.

[0242] In the electronic module B134 according to Embodiment 7, the parasitic inductances L1, L2, and L3 of the respective parts shown in the equivalent circuit of FIG. 4 described above depend on the shapes of the electrical connection members and wiring patterns shown in FIG. 22 and are obtained by simulation. As a result of simulation considering these, L1 was 1.10 nH, L2 was 1.00 nH, and L3 was 0.65 nH. By making all of the first to fourth electrical connection members 51 to 54 plate-shaped electrical connection members, compared with the electronic module B130 according to Embodiment 5, the value of L1 is 0.47 nH lower, the value of L2 is 0.31 nH lower, and the value of L3 is 0.20 nH lower.

[0243] <Double Pulse Test> FIG. 23 is a diagram shown to explain the double pulse test. Since FIGS. 23(A) and 23(B) are the same as FIGS. 7(A) and 7(B) described in the present invention (Aspect 1), the description thereof is omitted. FIG. 23(C) is a reproduction of the parasitic inductances L1, L2, and L3 in the electronic module B130 according to Embodiment 5, the electronic module B132 according to Embodiment 6, the electronic module B134 according to Embodiment 7, and the conventional type electronic module described above.

[0244] Incidentally, the parasitic inductances L1, L2, and L3 of the electronic module B130 are obtained by simulation as L1 = 1.57 nH, L2 = 1.31 nH, and L3 = 0.85 nH. The parasitic inductances L1, L2, and L3 of the electronic module B132 are obtained by simulation as L1 = 1.10 nH, L2 = 1.31 nH, and L3 = 0.85 nH. The parasitic inductances L1, L2, and L3 of the electronic module B134 are obtained by simulation as L1 = 1.10 nH, L2 = 1.00 nH, and L3 = 0.65 nH. Also, the parasitic inductances of the above-described conventional electronic module were L1 = 3.35 nH, L2 = 8.30 nH, and L3 = 8.97 nH.

[0245] FIG. 24 is a diagram obtained by simulating the switching waveforms of the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 in the electronic module B130 according to Embodiment 5. In FIG. 24, the inductances L1, L2, and L3 (see FIG. 4 described above) in the electronic module B130 according to Embodiment 5 are obtained by simulation, and the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 as a transistor are simulated in the simulation block 140 of the double-pulse test circuit shown in FIG. 23(A), and the switching waveforms are measured at the switching waveform measurement timing. The parasitic inductances L1, L2, and L3 of the electronic module B130 obtained by simulation are 1.57 nH, 1.31 nH, and 0.85 nH, respectively, as described above, and the simulation in the double-pulse test circuit shown in FIG. 23(A) was performed using these values.

[0246] Incidentally, the capacitor 30 mounted inside the electronic module B130 is 0.01 μF, and the parasitic inductance of the choke coil 142 connected outside the electronic module B130 is 50 μH.

[0247] As shown in Fig. 24, in the double-pulse test using the electronic module B130 according to Embodiment 5, the maximum drain-source voltage is about 500V. As the first semiconductor element 10 and the second semiconductor element 20, if the absolute maximum rating voltage between drain and source is 650V, it can be seen that a sufficient margin is ensured with respect to the specification rating. Also, the surge voltage has decayed to about 10Vp-p or less, for example, 180 ns after the switching waveform measurement timing, indicating that it is operationally stable. This is also clear from the waveform of the drain current ID.

[0248] Fig. 25 is a diagram obtained by simulating the switching waveforms of the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 in the electronic module B132 according to Embodiment 6. In Fig. 25, the inductances L1, L2, L3 (see Fig. 4 described above) in the electronic module B132 according to Embodiment 6 are obtained by simulation, and the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 as a transistor are simulated in the simulation block 140 of the double-pulse test circuit shown in Fig. 23(A), and the switching waveforms are measured at the switching waveform measurement timing. The parasitic inductances L1, L2, L3 of the electronic module B132 obtained by simulation are 1.10 nH, 1.31 nH, and 0.85 nH, respectively, as described above, and the simulation in the double-pulse test circuit shown in Fig. 23(A) was performed using these values.

[0249] Note that the capacitor 30 mounted inside the electronic module B132 is 0.01 μF, and the parasitic inductance of the choke coil 142 connected outside the electronic module B132 is 50 μH.

[0250] As shown in Fig. 25, in the double pulse test using the electronic module B132 according to Embodiment 6, the maximum drain-source voltage is slightly lower than that of the electronic module B130, being slightly less than about 500V. As the first semiconductor element 10 and the second semiconductor element 20, if the absolute maximum rated voltage between drain and source is 650V, it can be seen that a sufficient margin is ensured with respect to the specification rating. Also, the surge voltage has decayed to about 10Vp-p or less, for example, 180 ns after the switching waveform measurement timing, indicating that it is operationally stable. This is also clear from the waveform of the drain current ID.

[0251] Fig. 26 is a diagram obtained by simulating the switching waveforms of the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 in the electronic module B134 according to Embodiment 7. In Fig. 26, the inductances L1, L2, L3 (see Fig. 4 described above) in the electronic module B134 according to Embodiment 7 are obtained by simulation, and the drain-source voltage VDS and the drain current ID of the second semiconductor element 20 as a transistor are simulated in the simulation block 140 of the double pulse test circuit shown in Fig. 23(A), and the switching waveforms are measured at the switching waveform measurement timing. The parasitic inductances L1, L2, L3 of the electronic module B134 obtained by simulation are 1.10 nH, 1.00 nH, and 0.65 nH respectively as described above, and simulations were performed using these values in the double pulse test circuit shown in Fig. 23(A).

[0252] Note that the capacitor 30 mounted inside the electronic module B134 is 0.01 μF, and the parasitic inductance of the choke coil 142 connected outside the electronic module B134 is 50 μH.

[0253] As shown in FIG. 26, in the double pulse test using the electronic module B134 according to Embodiment 7, the maximum drain-source voltage is slightly lower than that of the electronic module B130, being slightly less than about 500 V. As the first semiconductor element 10 and the second semiconductor element 20, if the absolute maximum rated drain-source voltage is 650 V, it can be seen that a sufficient margin is ensured with respect to the specification rating. Also, the surge voltage has decayed to about 10 Vp-p or less, for example, 180 ns after the switching waveform measurement timing, indicating that it is operationally stable. This is also clear from the waveform of the drain current ID.

[0254] Note that the comparative example is the same as the comparative example described in the present invention (Aspect 1). Therefore, the description here is omitted.

[0255] As described above, according to the present invention (Aspect 3), further reduction of inductance inside the electronic module is possible, and switching loss, surge voltage, and noise can be reduced when a circuit system is configured using the electronic module of the present invention (Aspect 3). Thereby, performance improvements such as the operation stability and reliability of the circuit system using the electronic module can be achieved.

[0256] Although the embodiments of the present invention (Aspect 3) have been described above, the present invention (Aspect 3) is not limited to the above-described embodiments, and can also be applied to electronic modules equipped with a plurality of semiconductor chips, and various modifications and applications are possible without departing from the gist of the present invention (Aspect 3).

[0257] (1) In each of the above-described embodiments, the present invention has been described using an electronic module having a capacitor. However, the present invention (Aspect 3) is not limited thereto. For example, an electronic module having no capacitor (for example, an electronic module in which the capacitor is removed from the electronic module B130 according to Embodiment 5 and the mold resin is partially hollowed out at the capacitor mounting portion) can also be used. In this case, by attaching an external capacitor to the capacitor mounting position, an electronic module similar to the electronic module according to Embodiment 1 can be configured.

[0258] (2) In each of the above-described embodiments, the present invention (Aspect 3) has been described using a half-bridge circuit. However, the present invention (Aspect 3) is not limited thereto. The present invention (Aspect 3) can be applied to circuits other than the half-bridge circuit.

[0259] (3) In each of the above-described embodiments, the present invention (Aspect 3) has been described using rectangular semiconductor elements as the first semiconductor element and the second semiconductor element. However, the present invention (Aspect 3) is not limited thereto. For example, square semiconductor elements can be used for one or both of the first semiconductor element and the second semiconductor element.

[0260] [The present invention (Aspect 4)] FIG. 27 is a conceptual diagram of an electronic module 500 of the present invention (Aspect 4). FIG. 28 is a diagram showing the electrode structures of the first switch element 310 and the second switch element 320. FIG. 28(A) is a plan view of the first switch element 310, FIG. 28(B) is a plan view of the second switch element 320, and FIG. 28(C) is a cross-sectional view taken along the line X1-X1 of the second switch element 320 shown in FIG. 28(B). FIG. 29 is a diagram showing the electrode structures of the third switch element 410 and the fourth switch element 420. FIG. 29(A) is a plan view of the third switch element 410, FIG. 29(B) is a plan view of the fourth switch element 420, and FIG. 29(C) is a cross-sectional view taken along the line X2-X2 of the fourth switch element 420 shown in FIG. 29(B).

[0261] FIG. 30 is a diagram showing the first cascode switch element 300. FIG. 30(A) is a plan view of the first cascode switch element 300, and FIG. 30(B) is a cross-sectional view of the first cascode switch element 300. FIG. 31 is a diagram showing the second cascode switch element 400. FIG. 31(A) is a plan view of the second cascode switch element 400, and FIG. 31(B) is a cross-sectional view of the second cascode switch element 400. FIG. 32 is a diagram showing the equivalent circuit 510 of the electronic module 500. Note that although the first cascode switch element 300 shown in FIGS. 30(A) and 30(B) cannot originally be said to be a cascode switch element because the first gate electrode 313g and the second source electrode 322s are in an unconnected state, it is referred to as the first cascode switch element in this specification. Also, although the second cascode switch element 400 shown in FIGS. 31(A) and 31(B) cannot originally be said to be a cascode switch element because the third gate electrode 413g and the fourth source electrode 422s are in an unconnected state, it is referred to as the second cascode switch element in this specification.

[0262] The electronic module 500 of the present invention (Aspect 4) is a resin-sealed electronic module. As shown in FIG. 1, it includes the first cascode switch element 300, the second cascode switch element 400, a capacitor 30, a first wiring pattern 41 on which the first cascode switch element 300 is mounted, a second wiring pattern 42 on which the second cascode switch element 400 is mounted, and a substrate having a third wiring pattern 43.

[0263] In the electronic module 500 of the present invention (Aspect 4), the first cascode switch element 300 includes a first switch element 310 which is a normally-on type semiconductor element having a first drain electrode 311d, a first source electrode 312s, and a first gate electrode 313g, and a second switch element 320 which is a normally-off type semiconductor element having a second drain electrode 321d (see FIG. 28(C)), a second source electrode 322s, and a second gate electrode 323g. The second switch element 320 is laminated on the first switch element 310 in a state where the second drain electrode 321d and the first source electrode 312s are joined by a conductive bonding material 330 (see FIGS. 30(A) and 30(B)), and the first gate electrode 313g and the second source electrode 322s are connected. The connection between the first gate electrode 313g and the second source electrode 322s is made through a first cascode electrical connection member 315, a first wiring pattern 41, and a first electrical connection member 51 as shown in FIG. 27.

[0264] In the electronic module 500 of the present invention (Aspect 4), the second cascode switch element 400 includes a third switch element 410 which is a normally-on type semiconductor element having a third drain electrode 411d, a third source electrode 412s, and a third gate electrode 413g, and a fourth switch element 420 which is a normally-off type semiconductor element having a fourth drain electrode 421d (see FIG. 29(C)), a fourth source electrode 422s, and a fourth gate electrode 423g. The fourth switch element 420 is laminated on the third switch element 410 in a state where the fourth drain electrode 421d and the third source electrode 412s are joined by a conductive bonding material 430 (see FIGS. 31(A) and 31(B)), and the third gate electrode 413g and the fourth source electrode 422s are connected. The connection between the third gate electrode 413g and the fourth source electrode 422s is made through a second cascode electrical connection member 415, a second wiring pattern 42, and a second electrical connection member 52 as shown in FIG. 27.

[0265] In the electronic module 500 of the present invention (Aspect 4), as shown in FIG. 27, the first wiring pattern 41 is connected to the second source electrode 322s by the first electrical connection member 51 and to the third drain electrode 411d by the fourth electrical connection member 54. The second wiring pattern 42 is connected to the fourth source electrode 422s by the second electrical connection member 52 and to a part 31 of the capacitor 30. The third wiring pattern 43 is connected to the first drain electrode 311d by the third electrical connection member 53 and to the other part 32 of the capacitor 30.

[0266] In the electronic module 500 of the present invention (Aspect 4), as shown in FIG. 27, the first cascode switch element 300 and the second cascode switch element 400 are arranged in different directions. Here, the statement that "the first cascode switch element 300 and the second cascode switch element 400 are arranged in different directions" means that "the first cascode switch element 300 and the second cascode switch element 400 are arranged such that the extending directions of the first drain electrode 311d, the first source electrode 312s, the second drain electrode 321d, and the second source electrode 322s are different from the extending directions of the third drain electrode 411d, the third source electrode 412s, the fourth drain electrode 421d, and the fourth source electrode 422s." Here, the "extending direction of the electrode" includes the "array direction of the individual electrodes" when the electrode is composed of a plurality of individual electrodes. An example of the first cascode switch element 300 and the second cascode switch element 400 being arranged in different directions is the vertical direction.

[0267] The electronic module 500 of the present invention (Aspect 4) includes a first cascode switch element 300 composed of a first switch element 310 made of a normally-on semiconductor element and a second switch element 320 made of a normally-off semiconductor element, and a second cascode switch element 400 composed of a third switch element 410 made of a normally-on semiconductor element and a fourth switch element 420 made of a normally-off semiconductor element. Therefore, according to the electronic module 300 of the present invention (Aspect 4), a normally-on power semiconductor element (the first switch element 310, the third switch element 410) made of, for example, a wide bandgap semiconductor (e.g., GaN) capable of high breakdown voltage and high-frequency driving is used together with a normally-off power semiconductor element (the second switch element 320, the fourth switch element 420) made of a conventional power semiconductor (e.g., silicon) and connected in cascode, thereby becoming a normally-off switching element. The switching frequency can be increased to the order of several MHz, the turn-on and turn-off speed can be increased by more than one digit compared to the conventional one, and furthermore, high-frequency driving of the power supply system can be realized.

[0268] Also, according to the electronic module 500 of the present invention (Aspect 4), since each of the switch elements 310, 320, 410, 420, the capacitor 30, each of the wiring patterns 41, 42, 43, and each of the electrical connection members 51, 52, 53, 54 are arranged as described above (in particular, since the first cascode switch element 300 and the second cascode switch element 400 are arranged in different directions), the lengths of the electrical connection members 51, 52, 53, 54 can be shortened. Further, further reduction of inductance inside the electronic module 500 including portions other than the electrical connection members 51, 52, 53, 54 becomes possible. For this reason, the inductance of the electronic module 500 can be reduced, and switching loss, surge voltage, and noise can be reduced when a circuit system is configured using the electronic module 500. As a result, as described above, by using, for example, a wide bandgap semiconductor element (e.g., GaN) as the first switch element 310 and the third switch element 410, the switching frequency can be increased to the order of several MHz, the turn-on / off speed can be increased by more than one digit compared to the conventional case, and even when high-frequency driving of the power supply system is realized, performance improvements such as the operation stability and reliability of the circuit system can be achieved.

[0269] As a result, even if the electronic module 500 of the present invention (Aspect 4) is a high-frequency-driven electronic module using a wide bandgap semiconductor element, it becomes an electronic module that satisfies the requirements in terms of operation stability and reliability.

[0270] In the electronic module 500 of the present invention (Aspect 4), as shown in FIG. 28(A), the first switch element 310 includes a first drain electrode 311d, a first source electrode 312s, and a first gate electrode 313g on one surface, and the first drain electrode 311d and the first source electrode 312s are arranged in parallel. Further, as shown in FIGS. 28(B) and 28(C), the second switch element 320 includes a second gate electrode 323g and a second source electrode 322s on one surface and a second drain electrode 321d on the other surface. Further, as shown in FIG. 29(A), the third switch element 410 includes a third drain electrode 411d, a third source electrode 412s, and a third gate electrode 413g on one surface, and the third drain electrode 411d and the third source electrode 412s are arranged in parallel. Further, as shown in FIGS. 29(B) and 29(C), the fourth switch element 420 includes a fourth gate electrode 423gg and a fourth source electrode 422s on one surface and a fourth drain electrode 421d on the other surface.

[0271] Thus, if the first switch element 310 has a lateral configuration and the second switch element 320 has a vertical configuration, the first source electrode 312s and the second drain electrode 321d can be electrically connected simply by laminating the second switch element 320 on the first switch element 310 via the conductive bonding material 330 (see FIGS. 30(A) and 30(B)). Further, if the third switch element 410 has a lateral configuration and the fourth switch element 420 has a vertical configuration, the third source electrode 412s and the fourth drain electrode 421d can be electrically connected simply by laminating the fourth switch element 420 on the third switch element 410 via the conductive bonding material 430 (see FIGS. 31(A) and 31(B)). Thereby, since the connection is easy and the electrical connection path can be shortened, a cascode switch element with less parasitic inductance can be formed.

[0272] In the electronic module 500 of the present invention (Aspect 4), the electrode arrangements shown in FIGS. 28 and 29 are examples. For example, the electrode arrangements of the first switch element 310 and the third switch element 410 can be changed without departing from the gist of the invention, and the first gate electrode 313g and the third gate electrode 413g may be arranged on both sides with the back surface arrangement. Specific examples of the horizontal configuration of the normally-on first switch element 310 and the third switch element 410 include cases where a GaN transistor is formed on a silicon substrate or a GaN transistor is formed on a sapphire substrate. Further, specific examples of the normally-off second switch element 320 and the fourth switch element 420 include LV-MOSFETs and the like.

[0273] In the first cascode switch element 300, the first gate electrode 313g and the second source electrode 322s are connected when connected via the first cascode electrical connection member 315, the first wiring pattern 41, and the first electrical connection member 51 as shown in FIG. 27. Thereby, a cascode connection is configured. Also, in the second cascode switch element 400, the third gate electrode 413g and the fourth source electrode 422s are connected when connected via the second cascode electrical connection member 215, the second wiring pattern 42, and the second electrical connection member 52 as shown in FIG. 27. Thereby, a cascode connection is configured.

[0274] Note that the first gate electrode 313g and the second source electrode 322s may be connected by wire bonding or the like. Also, the third gate electrode 413g and the fourth source electrode 422s may be connected by wire bonding or the like.

[0275] Thus, by using the cascode switch element configured as described above, the electronic module 500 of the present invention (Aspect 4) can use a normally-on semiconductor element that can be driven at high frequencies and is made of a wide-bandgap semiconductor in the same manner as a normally-off semiconductor element, and can realize functions suitable for applications (such as a half-bridge circuit and a totem-pole type power factor improvement circuit). Therefore, although it is an electronic module for high-frequency driving using a wide-bandgap semiconductor element, it becomes an electronic module that satisfies the requirements in terms of operation stability and reliability.

[0276] In the electronic module 500 of the present invention (Aspect 4), as shown in FIG. 27, the first gate electrode 313g and the first wiring pattern 41 are connected by the first cascode electrical connection member 315, the third gate electrode 413g and the second wiring pattern 42 are connected by the second cascode electrical connection member 415, and in the first cascode switch element 300, the first gate electrode 313g and the second source electrode 322s are connected via the first cascode electrical connection member 315, the first wiring pattern 41, and the first electrical connection member 51. In the second cascode switch element 400, the third gate electrode 413g and the fourth source electrode 422s are connected via the second cascode electrical connection member 415, the second wiring pattern 42, and the second electrical connection member 52. Thereby, it is possible to reduce the inductance of the electronic module and reduce the mounting space in the electronic module.

[0277] In the electronic module 500 of the present invention (Aspect 4), as shown in FIG. 27, the first wiring pattern 41 has a shape based on an L shape, the second wiring pattern 42 and the third wiring pattern 43 have shapes based on rectangles, and the third wiring pattern 43 is arranged surrounded by the first wiring pattern 41 and the second wiring pattern 42 on three sides. Thereby, it is possible to reduce the inductance of the electronic module and reduce the mounting space in the electronic module.

[0278] In the electronic module 500 of the present invention (Aspect 4), as shown in FIG. 27, the first cascode switch element 300 is disposed in a region adjacent to the second wiring pattern 42 and the third wiring pattern 43 in the first wiring pattern 41, and the first drain electrode 311d is disposed in parallel close to the third wiring pattern 43. Further, the second cascode switch element 400 is disposed in a region adjacent to the first wiring pattern 41 in the second wiring pattern 42, and the third drain electrode 411d is disposed in parallel close to the first wiring pattern 41. And the capacitor 30 is disposed in a region close to the second cascode switch element 400 and connected to the second wiring pattern 42 and the third wiring pattern 43. Thereby, it is possible to reduce the inductance of the electronic module and reduce the mounting space in the electronic module.

[0279] In the electronic module 500 of the present invention (Aspect 4), as shown in FIG. 27, the second wiring pattern 42 has a first capacitor connection portion 34 to which a part 31 of the capacitor 30 is connected, and the third wiring pattern 43 has a second capacitor connection portion 35 to which the other part 32 of the capacitor 30 is connected. The planar shapes of the second wiring pattern 42 and the third wiring pattern 43, the mounting position of the second cascode switch element 400, and the formation positions of the first capacitor connection portion 34 and the second capacitor connection portion 35 are defined so that the wiring route from the fourth source electrode 422s through the second electrical connection member 52, the second wiring pattern 42, the capacitor 30, the third wiring pattern 43, and the third electrical connection member 53 to the first drain electrode 311d is the shortest. Thereby, the inductance in the above wiring route portion can be minimized.

[0280] In the electronic module 500 of the present invention (Aspect 4), the first electrical connection member 51, the second electrical connection member 52, the third electrical connection member 53, and the fourth electrical connection member 54 can be linear or plate-like electrical connection members (see FIGS. 33 to 35 described later).

[0281] In the electronic module 500 of the present invention (Aspect 4), the first switch element 310 and the third switch element 410 are made of a wide-bandgap semiconductor material such as gallium nitride, silicon carbide, gallium oxide, or diamond, and are semiconductor elements with a higher breakdown voltage than the second switch element 320 and the fourth switch element 420. As a result, the switching frequency can be increased to the order of several MHz, the turn-on and turn-off speed can be increased by more than one order of magnitude compared to the conventional one, and furthermore, high-frequency driving of the power supply system can be realized. As a result, it is possible to reduce the switching loss, surge voltage, and noise in the circuit system by using an electronic module composed of semiconductor elements having functions suitable for circuit applications (half-bridge circuit, totem-pole type power factor improvement circuit, etc.), and to improve the performance such as the operation stability and reliability of the circuit system using the electronic module.

[0282] In the electronic module 500 of the present invention (Aspect 4), a ground terminal 74, a power supply terminal 70, and an output terminal 72 are arranged on one side of the electronic module 500, and control signal terminals 80 and 82 are arranged on the other side. The capacitor 30 is arranged near the ground terminal 74 and the power supply terminal 70, and it is preferable that the first cascode switch element 300 and the second cascode switch element 400 are arranged close to the capacitor 30 (see FIG. 33 described later). Thereby, it is possible to reduce the inductance of the electronic module and reduce the mounting space in the electronic module.

[0283] In the electronic module 500 of the present invention (Aspect 4), as shown in the equivalent circuit 510 of the electronic module of the present invention (Aspect 4) shown in FIG. 32, the first cascode switch element 300 and the second cascode switch element 400 can be used in a half-bridge circuit.

[0284] [Embodiment 8] FIG. 33 is a plan view showing an electronic module 530 according to Embodiment 8. The electronic module 530 according to Embodiment 8 is composed of a first cascode switch element 300, a second cascode switch element 400, a capacitor 30, a first wiring pattern 41, a second wiring pattern 42, a third wiring pattern 43, and a substrate 40. The configurations of the first cascode switch element 300, the second cascode switch element 400, the capacitor 30, the first wiring pattern 41, the second wiring pattern 42, the third wiring pattern 43, and the substrate 40 are basically the same as those described in the electronic module 500 of the present invention (Aspect 4) described above.

[0285] In the electronic module 530 according to Embodiment 8, the first cascode switch element 300 and the second cascode switch element 400 constitute a half-bridge circuit as shown in FIGS. 32 and 33. The first gate electrode 313g and the second source electrode 322s of the first cascode switch element 300, and the third gate electrode 413g and the fourth source electrode 422s of the second cascode switch element 400 are connected.

[0286] The first drain electrode 311d of the first cascode switch element 300 is connected to the power supply terminal 70 via the third electrical connection member 53 and the third wiring pattern 43. The second source electrode 322s of the first cascode switch element 300 is connected to the third drain electrode 411d of the second cascode switch element 400 via the first electrical connection member 51, the first wiring pattern 41, and the fourth electrical connection member 54, and is also connected to the output terminal 72 via the first electrical connection member 51 and the first wiring pattern 41. The first gate electrode 313g is connected to the second source electrode 322s via the first cascode electrical connection member 315, the first wiring pattern 41, and the first electrical connection member 51.

[0287] The fourth source electrode 422s of the second cascode switch element 400 is connected to the ground terminal 74 via the second electrical connection member 52 and the second wiring pattern 42. The third gate electrode 413g is connected to the fourth source electrode 422s via the second cascode electrical connection member 215, the second wiring pattern 42, and the second electrical connection member 52. The capacitor 30 is connected to the power supply terminal 70 and the ground terminal 74 via the third wiring pattern 43 and the second wiring pattern 42.

[0288] The circuit configuration is such that the capacitor 30 is connected in parallel to the first cascode switch element 300 and the second cascode switch element 400 connected in series. As the substrate 40, for example, a DCB substrate in which a copper circuit board is directly bonded to a ceramic substrate can be used.

[0289] In the electronic module 530 according to Embodiment 8, as the first electrical connection member 51, the second electrical connection member 52, the third electrical connection member 53, and the fourth electrical connection member 54, as shown in FIG. 33, three wires are used respectively. However, it is not limited to three wires, and two or less wires may be used, or four or more wires (for example, six wires) may be used.

[0290] In the electronic module 530 according to Embodiment 8, the power supply terminal 70, the output terminal 72, and the ground terminal 74 are arranged on one side, and the first control signal terminal 80, the first detection signal terminal 81, the second control signal terminal 82, and the second detection signal terminal 83 are arranged on the other side.

[0291] The first control signal terminal 80 is connected to the fourth wiring pattern 44 formed on the surface of the substrate 40, and the first detection signal terminal 81 is connected to the fifth wiring pattern 45 formed on the surface of the substrate 40. The second control signal terminal 82 is connected to the sixth wiring pattern 46 formed on the surface of the substrate 40, and the second detection signal terminal 83 is connected to the seventh wiring pattern 47 formed on the surface of the substrate 40.

[0292] The second gate electrode 323g of the first cascode switch element 300 is connected to the fourth wiring pattern 44 by the fifth electrical connection member 55. The second source electrode 322s of the first cascode switch element 300 is connected to the fifth wiring pattern 45 by the sixth electrical connection member 56. The fourth gate electrode 423g of the second cascode switch element 400 is connected to the sixth wiring pattern 46 by the seventh electrical connection member 57. The fourth source electrode 422s of the second cascode switch element 400 is connected to the seventh wiring pattern 47 by the eighth electrical connection member 58.

[0293] In the electronic module 530 according to Embodiment 8, as shown in FIG. 32, the parasitic inductance L1 of the portion connecting the second source electrode 322s of the first cascode switch element 300 and the third drain electrode 411d of the second cascode switch element 400, the parasitic inductance L2 of the portion connecting the drain electrode 111d of the first cascode switch element 300 and the capacitor 30, and the parasitic inductance L3 of the portion connecting the fourth source electrode 422s of the second cascode switch element 400 and the capacitor 30 exist.

[0294] The electronic module 530 has a ground terminal 74, a power supply terminal 70, and an output terminal 72 arranged on one side, and control signal terminals arranged on the other side. The capacitor 30 is arranged near the ground terminal 74 and the power supply terminal 70. The first cascode switch element 300 and the second cascode switch element 400 are arranged close to the capacitor 30. Thereby, noise can be effectively removed at the entrance of the high-voltage source, the electrical connection members in the high-voltage region can be shortened, and the parasitic inductance can be reduced.

[0295] In the electronic module 5 according to Embodiment 8, the inductances L1, L2, and L3 of the respective parts shown in the equivalent circuit of FIG. 32 depend on the structure of the electrical connection members and wiring patterns shown in FIG. 33 and are obtained by simulation.

[0296] As shown in FIG. 33, the dimensions of the first wiring pattern 41 are in an L-shaped configuration. The width of the mounting area of the first cascode switch element 300 is 6.3 mm, and the width of the output terminal connection area is 6.5 mm. The second wiring pattern 42 is in a rectangular shape where the width of the mounting area of the second cascode switch 200 is approximately 12 mm and the width of the ground terminal connection area is 10.0 mm. The dimensions of the third wiring pattern 43 are in a rectangular shape with a width of 7.3 mm and a length of 5.4 mm. Also, the wire diameter is φ200 μm for each.

[0297] As a result of performing simulations considering these electrical connection members and structures, L1 was 1.95 nH, L2 was 1.21 nH, and L3 was 1.29 nH. It can be seen that these values are more than one order of magnitude lower compared to the above-described conventional technologies (Patent Documents 3, 4, etc.).

[0298] [Embodiment 9] FIG. 34 is an enlarged perspective view of a main part of the electronic module 532 according to Embodiment 9. FIG. 34 shows an enlarged view of the area corresponding to the area surrounded by the dashed line in FIG. 33. The electronic module 532 according to Embodiment 9, as shown in FIG. 34, is different from the electronic module 530 according to Embodiment 8 in that the first electrical connection member 51 and the fourth electrical connection member 54 are plate-shaped electrical connection members. Otherwise, it is the same as the electronic module 530 according to Embodiment 8. The plate-shaped first electrical connection member 51 has an area that covers the second source electrode 322s of the first cascode switch element 300 and connects the second source electrode 322s and the first wiring pattern 41. The plate-shaped fourth electrical connection member 54 has an area that covers the third drain electrode 411d of the second cascode switch element 400 and connects the third drain electrode 411d and the first wiring pattern 41.

[0299] In the electronic module 532 according to Embodiment 9, the parasitic inductances L1, L2, and L3 of the respective parts shown in the equivalent circuit of FIG. 32 depend on the shapes of the electrical connection members and wiring patterns shown in FIG. 34 and are obtained by simulation. As a result of simulation considering these, L1 was 1.74 nH, L2 was 1.21 nH, and L3 was 1.29 nH. By using the plate-shaped first electrical connection member 51 and fourth electrical connection member 54, the value of L1 is 0.21 nH lower than that in the case of the electronic module 530 according to Embodiment 8.

[0300] [Embodiment 10] FIG. 35 is an enlarged perspective view of the main part of the electronic module 534 according to Embodiment 10. FIG. 10 shows an enlarged view of the region corresponding to the region surrounded by the broken line in FIG. 33. The electronic module 534 according to Embodiment 10, as shown in FIG. 35, is different from the electronic module 530 according to Embodiment 8 in that all the electrical connection members are plate-shaped electrical connection members. Otherwise, it is the same as the electronic module 530 according to Embodiment 8.

[0301] The plate-shaped first electrical connection member 51 has an area that covers the second source electrode 322s of the first cascode switch element 300 and connects the second source electrode 322s and the first wiring pattern 41. The plate-shaped second electrical connection member 52 has an area that covers the fourth source electrode 422s of the second cascode switch element 400 and connects the fourth source electrode 422s and the second wiring pattern 42. The plate-shaped third electrical connection member 53 has an area that covers the first drain electrode 311d of the first cascode switch element 300 and connects the first drain electrode 311d and the third wiring pattern 43. The plate-shaped fourth electrical connection member 54 has an area that covers the third drain electrode 411d of the second cascode switch element 400 and connects the third drain electrode 411d and the first wiring pattern 41.

[0302] In the electronic module 534 according to Embodiment 10, the parasitic inductances L1, L2, and L3 of the respective parts shown in the equivalent circuit of FIG. 32 depend on the shapes of the electrical connection members and wiring patterns shown in FIG. 35, and are obtained by simulation. As a result of simulation considering these, L1 was 1.74 nH, L2 was 1.19 nH, and L3 was 1.14 nH. By using the plate-shaped first electrical connection member 51, the plate-shaped second electrical connection member 52, the plate-shaped third electrical connection member 53, and the plate-shaped fourth electrical connection member 54, the value of L1 is 0.21 nH lower, the value of L2 is 0.02 nH lower, and the value of L3 is 0.15 nH lower than in the case of the electronic module 530 according to Embodiment 1.

[0303] <Double Pulse Test> FIG. 36 is a diagram shown to explain the double pulse test. FIG. 36(A) is a diagram showing a simulation block 140 of a double pulse test circuit when the first cascode switch element 300 and the second cascode switch element 400 are used. The drain-source voltage VDS and the drain current ID after turn-off in the switching waveform by the double pulse test are simulated.

[0304] The circuit configuration is that of a half-bridge boost circuit. As shown in FIG. 36(A), the first cascode switch element 300 and the second cascode switch element 400 are connected in series, and the capacitor 30 is connected in parallel to the series circuit of the first cascode switch element 300 and the second cascode switch element 400. The choke coil 142 is connected to the 400V input power supply 144, and the other end of the choke coil 142 is connected to the midpoint of the first cascode switch element 300 and the second cascode switch element 400. The boosted voltage is clamped by the 400V output power supply 146.

[0305] The fourth source electrode 422s of the second cascode switch element 400 is connected to the ground line connecting the input power supply 144, the capacitor 30, and the output power supply 146. A signal is applied between the second gate electrode 323g and the second source electrode 322s of the first cascode switch element 300, and between the fourth gate electrode 423g and the fourth source electrode 422s of the second cascode switch element 400 for switching control. Hereinafter, the regions between the second gate electrode 323g and the second source electrode 322s of the first cascode switch element 300, and between the fourth gate electrode 423g and the fourth source electrode 422s of the second cascode switch element 400 are referred to as between the gate and the source.

[0306] In the double pulse test, as shown in FIG. 36(B), the first control signal S1 and the second control signal S2 are applied between the gate and the source of each of the first cascode switch element 300 and the second cascode switch element 400. First, the second cascode switch element 400 is turned on by the second control signal S2 and turned off after a time T1. After a predetermined dead time elapses from this timing, the first cascode switch element 300 is turned on by the first control signal S1 and turned off after a time T2.

[0307] After a predetermined dead time elapses from this timing, the second cascode switch element 400 is turned on by the second control signal S2 and turned off after a time T3. This is the switching waveform measurement timing, and the waveforms of the drain-source voltage VDS and the drain current ID of the second cascode switch element 400 are measured. Hereinafter, the regions between the first drain electrode 311d and the second source electrode 322s of the first cascode switch element 300, and between the third drain electrode 411d and the fourth source electrode 422s of the second cascode switch element 400 are referred to as between the drain and the source.

[0308] FIG. 36(C) shows the values of the parasitic inductances L1, L2, and L3 in the electronic module 530, the electronic module 532, the electronic module 534, and the conventional electronic module described later. The waveforms of the drain-source voltage VDS and the drain current ID are obtained with these values as L1, L2, and L3.

[0309] Note that the parasitic inductances L1, L2, and L3 of the electronic module 530 according to Embodiment 8 are obtained by simulation as L1 = 1.95 nH, L2 = 1.21 nH, and L3 = 1.29 nH. The parasitic inductances L1, L2, and L3 of the electronic module 532 according to Embodiment 9 are obtained by simulation as L1 = 1.74 nH, L2 = 1.21 nH, and L3 = 1.29 nH. The parasitic inductances L1, L2, and L3 of the electronic module 534 according to Embodiment 10 are obtained by simulation as L1 = 1.74 nH, L2 = 1.19 nH, and L3 = 1.14 nH. Also, the parasitic inductances of the above-described conventional electronic module were L1 = 3.35 nH, L2 = 8.30 nH, and L3 = 8.97 nH.

[0310] FIG. 37 is a diagram showing waveforms obtained by simulating the parasitic inductances L1, L2, and L3 in the equivalent circuit 530 of FIG. 32 in the electronic module 530 according to Embodiment 8, simulating the drain-source voltage VDS and the drain current ID of the second cascode switch element 400 with the simulation block 140 of the double pulse test circuit shown in FIG. 36(A), and measuring at the switching waveform measurement timing.

[0311] Note that the capacitor 30 mounted inside the electronic module 530 is 0.01 μF, and the inductance of the choke coil 142 connected outside the electronic module 530 is 50 μH.

[0312] As shown in Fig. 37, in the double pulse test using the electronic module 530 according to Embodiment 8, the maximum drain-source voltage is about 450 V. As the first cascode switch element 300 and the second cascode switch element 400, the absolute maximum rated voltage between drain and source is 650 V, and it can be seen that a sufficient margin is ensured with respect to the specification rating. Also, it can be seen that the surge voltage is operationally stable without generating an excessive surge voltage, for example, 180 ns after the switching waveform measurement timing. This is also clear from the waveform of the drain current ID. Similar results were obtained for the electronic module 532 according to Embodiment 9 and the electronic module 534 according to Embodiment 10.

[0313] Note that the comparative example is the same as the comparative example described in the present invention (Aspect 1). Therefore, the description here is omitted.

[0314] As described above, according to the electronic module of the present invention (Aspect 4), further reduction of inductance inside the electronic module becomes possible. As a result, the electronic module of the present invention (Aspect 4) is an electronic module driven at high frequency using a wide bandgap semiconductor element, and satisfies the requirements in terms of operation stability and reliability.

[0315] Although the embodiments of the present invention (Aspect 4) have been described above, the present invention (Aspect 4) is not limited to the above-described embodiments, and can also be applied to an electronic module equipped with a plurality of semiconductor chips, and various modifications and applications are possible without departing from the gist of the present invention (Aspect 4).

[0316] (1) In each of the above-described embodiments, the present invention (Aspect 4) has been described using an electronic module having a capacitor, but the present invention (Aspect 4) is not limited thereto. For example, an electronic module having no capacitor (for example, an electronic module in which a capacitor is removed from the electronic module 530 according to Embodiment 1 and the mold resin is partially hollowed out at the capacitor mounting portion) can also be used. In this case, by attaching an external capacitor to the capacitor mounting position, an electronic module similar to the electronic modules according to the above-described embodiments can be configured.

[0317] (2) In each of the above-described embodiments, the present invention (Aspect 4) has been described using a half-bridge circuit, but the present invention (Aspect 4) is not limited thereto. The present invention (Aspect 4) can be applied to circuits other than the half-bridge circuit.

Explanation of Reference Numerals

[0318] 10 First semiconductor element 11d Drain electrode (other part of the first electrode) 12s Source electrode (part of the first electrode) 12sb Detection source electrode 13g Gate electrode 20 Second semiconductor element 21d Drain electrode (other part of the second electrode) 22s Source electrode (part of the second electrode) 22sb Detection source electrode 23g Gate electrode 30 Capacitor 30’ External capacitor 31 Part of the capacitor 32 Other part of the capacitor 34 First capacitor connection portion 35 Second capacitor connection portion 40 Substrate 41 First wiring pattern 42 Second wiring pattern 43 Third wiring pattern 44 Fourth wiring pattern 45 Fifth wiring pattern 46 Sixth wiring pattern 47 Seventh wiring pattern 51 Electrical connection member 52 Electrical connection member 53 Electrical connection member 55 Fifth electrical connection member 56 Sixth electrical connection member 57 Seventh electrical connection member 58 Eighth electrical connection member 60 Position adjustment member 70 Power supply terminal 72 Output terminal 74 Ground terminal 80 First control signal terminal 81 First detection signal terminal 82 Second detection signal terminal 83 Second control signal terminal 82 Second control signal terminal 83 Second detection signal terminal 82 Second control signal terminal 83 Second detection signal terminal 100, 130, A100, A130, A132, B100, B130, B132, B134, 500, 532, 534 Electronic module 120 Equivalent circuit 140 Simulation block 142 Choke coil 144 Input power supply 146 Output power supply 150 Equivalent circuit of conventional electronic module 300 First cascode switch element 310 First switch element 311d First drain electrode 312s First source electrode 313g First gate electrode 315 First cascode electrical connection member 320 Second switch element 321d Second drain electrode 322s Second source electrode 322sb Source electrode for second detection 323g Second gate electrode 330 Conductive bonding material 400 Second cascode switch element 410 Third switch element 411d Third drain electrode 412s Third source electrode 413g Third gate electrode 415 Second cascode electrical connection member 420 Fourth switch element 421d Fourth drain electrode 422s Fourth source electrode 422sb Source electrode for fourth detection 423g Fourth gate electrode 430 Conductive bonding material 500, 530, 532, 534 Electronic module 510 Equivalent circuit of the electronic module of the present invention (Aspect 4)

Claims

1. A first semiconductor element having a plurality of first electrodes, A second semiconductor element having a plurality of second electrodes, A capacitor, A substrate having a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a third wiring pattern, A plurality of electrical connection members, and comprising, A part of the first electrode and the other part of the second electrode are connected to the first wiring pattern, a part of the second electrode and a part of the capacitor are connected to the second wiring pattern, and the other part of the first electrode and the other part of the capacitor are connected to the third wiring pattern, The surface of the first electrode and the surface of the second electrode are at different height positions, and a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members, An electronic module, characterized in that a position adjusting member for adjusting the height position of the surface of the second electrode or the surface of the first electrode is disposed between the second wiring pattern and the second semiconductor element or between the first wiring pattern and the first semiconductor element.

2. The surface of the first electrode is at a position lower than the surface of the second electrode, The electronic module according to claim 1, wherein the first wiring pattern is at a position lower than the surface of the first electrode.

3. The electronic module according to claim 1, wherein a first semiconductor element mounting region in the first wiring pattern, a second semiconductor element mounting region in the second wiring pattern, and a part of the third wiring pattern are formed to be parallel to each other.

4. The plurality of electrical connection members are used for connecting the first semiconductor element, the second semiconductor element, the first wiring pattern, the second wiring pattern, and the third wiring pattern respectively, The electronic module according to claim 1, wherein the first semiconductor element, the second semiconductor element, the first wiring pattern, the second wiring pattern, and the third wiring pattern are configured such that the connection distances of the plurality of electrical connection members are each minimized.

5. The second wiring pattern has a first capacitor connection portion to which a part of the capacitor is connected, and the third wiring pattern has a second capacitor connection portion to which the other part of the capacitor is connected, The planar shapes of the second wiring pattern and the third wiring pattern, and the formation positions of the first capacitor connection portion and the second capacitor connection portion are defined such that the wiring route from a part of the second electrode, through the second wiring pattern, the capacitor, and the third wiring pattern, to the other part of the first electrode is the shortest. The electronic module according to claim 1, characterized in that.

6. The electronic module includes a power supply terminal, an output terminal, and a ground terminal on one side, and a control signal terminal on the other side. The capacitor is arranged on the one side. The electronic module according to claim 1, characterized in that.

7. The plurality of electrical connection members are linear or plate-shaped electrical connection members. The electronic module according to claim 1, characterized in that.

8. The plurality of electrical connection members are linear electrical connection members. When the higher surface of the surfaces of the first electrode and the second electrode is defined as the first surface, and the lower surface of the surfaces of the first electrode and the second electrode is defined as the second surface, the height position of the vertex of the electrical connection member in the first loop portion connecting the electrode corresponding to the first surface and the electrode corresponding to the second surface is higher than the height position of the vertex of the electrical connection member in the second loop portion connecting the electrode corresponding to the second surface and the first wiring pattern. The electronic module according to claim 1, characterized in that.

9. The planar position of the vertex of the electrical connection member in the first loop portion is biased toward the attachment position of the electrical connection member on the first surface side rather than the intermediate position between the attachment position of the electrical connection member on the first surface and the attachment position of the electrical connection member on the second surface. The planar position of the vertex of the electrical connection member in the second loop portion is biased toward the attachment position of the electrical connection member on the second surface side rather than the intermediate position between the attachment position of the electrical connection member on the second surface and the attachment position of the electrical connection member on the first wiring pattern. The electronic module according to claim 8, characterized in that.

10. The parasitic inductance of the portion connecting the first semiconductor element and the second semiconductor element is smaller than the parasitic inductance of the portion connecting the first semiconductor element and the capacitor, and the parasitic inductance of the portion connecting the second semiconductor element and the capacitor. The electronic module according to claim 1, characterized in that.

11. The electronic module according to claim 1, wherein the first semiconductor element and the second semiconductor element are made of a semiconductor using silicon, gallium nitride, silicon carbide, or gallium oxide as a material.

12. The electronic module according to claim 1, wherein each of the first semiconductor element and the second semiconductor element is a transistor having a drain electrode disposed on one side of the same surface and a source electrode disposed on the other side, or a diode having a cathode electrode disposed on one side of the same surface and an anode electrode disposed on the other side.

13. The electronic module according to claim 1, wherein the first semiconductor element and the second semiconductor element are used in a half-bridge circuit.

14. A first semiconductor element having a plurality of first electrodes; A second semiconductor element having a plurality of second electrodes; A substrate having a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a third wiring pattern; A plurality of electrical connection members; and A part of the first electrode and the other part of the second electrode are connected to the first wiring pattern, a part of the second electrode is connected to the second wiring pattern, and the other part of the first electrode is connected to the third wiring pattern. The surface of the first electrode and the surface of the second electrode are at different height positions, and a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members. An electronic module, characterized in that a position adjusting member for adjusting the height position of the surface of the second electrode or the surface of the first electrode is disposed between the second wiring pattern and the second semiconductor element or between the first wiring pattern and the first semiconductor element.

15. A first semiconductor element having a plurality of first electrodes; A second semiconductor element having a plurality of second electrodes; A capacitor; A substrate having a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a third wiring pattern; A plurality of electrical connection members; and A part of the first electrode and the other part of the second electrode are connected to the first wiring pattern, a part of the second electrode and a part of the capacitor are connected to the second wiring pattern, and the other part of the first electrode and the other part of the capacitor are connected to the third wiring pattern. The surface of the first electrode and the surface of the second electrode are at different height positions, and a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members. The plurality of electrical connection members are linear electrical connection members. When the higher surface of the surface of the first electrode and the surface of the second electrode is defined as the first surface, and the lower surface of the surface of the first electrode and the surface of the second electrode is defined as the second surface, the height position of the vertex of the electrical connection member in the first loop portion connecting the electrode corresponding to the first surface and the electrode corresponding to the second surface is higher than the height position of the vertex of the electrical connection member in the second loop portion connecting the electrode corresponding to the second surface and the first wiring pattern. The planar position of the vertex of the electrical connection member in the first loop portion is biased toward the attachment position of the electrical connection member on the first surface rather than the intermediate position between the attachment position of the electrical connection member on the first surface and the attachment position of the electrical connection member on the second surface. An electronic module, wherein the planar position of the vertex of the electrical connection member in the second loop portion is biased toward the attachment position of the electrical connection member on the second surface rather than the intermediate position between the attachment position of the electrical connection member on the second surface and the attachment position of the electrical connection member on the first wiring pattern.

16. The electronic module according to claim 15, wherein the height of the first semiconductor element is different from the height of the second semiconductor element.

17. A first semiconductor element having a plurality of first electrodes, a second semiconductor element having a plurality of second electrodes, a capacitor, a substrate having a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a third wiring pattern, and a plurality of electrical connection members. A part of the first electrode and the other part of the second electrode are connected to the first wiring pattern, a part of the second electrode and a part of the capacitor are connected to the second wiring pattern, and the other part of the first electrode and the other part of the capacitor are connected to the third wiring pattern. The surface of the first electrode and the surface of the second electrode are at different height positions, and a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members. The parasitic inductance of the portion connecting the first semiconductor element and the second semiconductor element is smaller than the parasitic inductance of the portion connecting the first semiconductor element and the capacitor, and the parasitic inductance of the portion connecting the second semiconductor element and the capacitor. An electronic module characterized by this.

18. The electronic module according to claim 17, characterized in that the height of the first semiconductor element and the height of the second semiconductor element are different.

19. A first semiconductor element having a plurality of first electrodes, A second semiconductor element having a plurality of second electrodes, A substrate having a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a third wiring pattern, A plurality of electrical connection members, A part of the first electrode and the other part of the second electrode are connected to the first wiring pattern, a part of the second electrode is connected to the second wiring pattern, and the other part of the first electrode is connected to the third wiring pattern, The surface of the first electrode and the surface of the second electrode are at different height positions, and a part of the first electrode, the other part of the second electrode, and the first wiring pattern are connected by one of the plurality of electrical connection members. The plurality of electrical connection members are linear electrical connection members. When the higher surface of the surface of the first electrode and the surface of the second electrode is defined as the first surface and the lower surface of the surface of the first electrode and the surface of the second electrode is defined as the second surface, the height position of the vertex of the electrical connection member in the first loop portion connecting the electrode corresponding to the first surface and the electrode corresponding to the second surface is higher than the height position of the vertex of the electrical connection member in the second loop portion connecting the electrode corresponding to the second surface and the first wiring pattern. The planar position of the vertex of the electrical connection member in the first loop portion is biased toward the electrical connection member attachment position on the first surface rather than the intermediate position between the electrical connection member attachment position on the first surface and the electrical connection member attachment position on the second surface. The planar position of the vertex of the electrical connection member in the second loop portion is biased toward the electrical connection member attachment position on the second surface rather than the intermediate position between the electrical connection member attachment position on the second surface and the electrical connection member attachment position on the first wiring pattern. An electronic module characterized by this.

20. A first semiconductor device having a plurality of first electrodes, A second semiconductor device having a plurality of second electrodes, A capacitor, A substrate having a first wiring pattern on which the first semiconductor device is mounted, a second wiring pattern on which the second semiconductor device is mounted, and a third wiring pattern, A plurality of electrical connection members, and In the first wiring pattern, a part of the first electrode and the other part of the second electrode are connected; in the second wiring pattern, a part of the second electrode and a part of the capacitor are connected; in the third wiring pattern, the other part of the first electrode and the other part of the capacitor are connected, One of the plurality of electrical connection members connects a part of the first electrode, the other part of the second electrode, and the first wiring pattern, The first semiconductor device and the second semiconductor device are arranged such that the extending direction of a part of the first electrode and the extending direction of the other part of the second electrode are the same, An electronic module, wherein the parasitic inductance of a portion connecting the first semiconductor device and the second semiconductor device is smaller than the parasitic inductance of a portion connecting the first semiconductor device and the capacitor and the parasitic inductance of a portion connecting the second semiconductor device and the capacitor.

21. The electronic module according to claim 20, wherein a first semiconductor device mounting region in the first wiring pattern, a second semiconductor device mounting region in the second wiring pattern, and a part of the third wiring pattern are arranged to be parallel to each other.

22. The second wiring pattern has a first capacitor connection portion to which a part of the capacitor is connected, and the third wiring pattern has a second capacitor connection portion to which the other part of the capacitor is connected, The planar shapes of the second wiring pattern and the third wiring pattern, and the formation positions of the first capacitor connection portion and the second capacitor connection portion are defined such that a wiring route from a part of the second electrode through the second wiring pattern, the capacitor, and the third wiring pattern to the other part of the first electrode is the shortest. The electronic module according to claim 20 or 21.

23. The electronic module includes a power supply terminal, an output terminal, and a ground terminal on one side, and a control signal terminal on the other side, The electronic module according to claim 20 or 21, wherein the capacitor is arranged on the one side.

24. The electronic module according to claim 20 or 21, wherein the plurality of electrical connection members are linear or plate-shaped electrical connection members.

25. The electronic module according to claim 20 or 21, wherein the first semiconductor element and the second semiconductor element are made of a semiconductor using silicon, gallium nitride, silicon carbide, or gallium oxide as a material.

26. The electronic module according to claim 20 or 21, wherein each of the first semiconductor element and the second semiconductor element is a transistor in which a drain electrode is disposed on one side of the same surface and a source electrode is disposed on the other side, or a diode in which a cathode electrode is disposed on one side of the same surface and an anode electrode is disposed on the other side.

27. The electronic module according to claim 20 or 21, wherein the first semiconductor element and the second semiconductor element are used in a half-bridge circuit.

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