Method for manufacturing a package device

Abstract

To provide a manufacturing method of a package device capable of suppressing variations in depth of a chip mounting area within a substrate plane.SOLUTION: A manufacturing method of a package device includes a groove forming step 101 of forming a groove capable of accommodating a device chip in a region sandwiched between adjacent planned division lines in a substrate having a plurality of intersecting planned division lines, a device chip disposing step 102 of bonding and disposing the device chip in the groove formed in the groove forming step 101, and a dividing step 104 of dividing the substrate having the device chips arranged in the grooves along the planned division lines into individual pieces.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a package device.

Background Art

[0002] With the miniaturization and high integration of semiconductor chips, the development of package technology for device chips has been progressing. Among them, an implementation method in which a plurality of semiconductor chips are placed on a wafer, encapsulated with a semiconductor encapsulant (mold resin), a redistribution layer (RDL) is formed, and then singulated, does not require a package substrate necessary for a normal package. Therefore, it is possible to reduce the thickness and cost of the module, shorten the wiring distance, etc., and has attracted attention as a next-generation technology.

[0003] However, when coating and encapsulating a device chip with a mold resin, there has been a problem that the entire substrate warps due to the shrinkage of the mold resin, making it difficult to form films, electrodes, thin the substrate, etc. thereafter. In response, in order to reduce the amount of mold resin and suppress warping, a technique of arranging a member for filling a gap in a region other than the region where the chip is mounted (see Patent Document 1), a technique of providing a depression in the substrate and arranging the chip in the depression (see Patent Document 2), etc. have been proposed.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] Incidentally, although the gap filling member and the recess of the substrate used in the above process are generally formed using dry etching, in order to perform etching, it is essential to form a mask, and it is also necessary to introduce exclusion equipment, etc., so there is a problem of high cost.

[0006] In addition, the TTV (Total Thickness Variation) at the bottom surface of the recess formed by etching is large, and there has been concern about the height variation of the chips when a plurality of chips are mounted inside the recess.

[0007] Furthermore, a loading phenomenon may occur in which the etching rate changes in the plane due to the processing pattern during etching or the like, and a difference in depth occurs between the central portion and the outer peripheral portion, which may cause problems in the formation of through-silicon vias (TSV) and the formation of a rewiring layer in the subsequent process.

[0008] The present invention has been made in view of such problems, and an object thereof is to provide a method for manufacturing a package device capable of suppressing the depth variation of the chip mounting region in the substrate plane.

Means for Solving the Problems

[0009] In order to solve the above-described problems and achieve the object, a method for manufacturing a package device according to the present invention is a method for manufacturing a package device, and includes a groove forming step of forming a groove capable of accommodating a device chip in a region sandwiched between adjacent division planned lines on a substrate having a plurality of intersecting division planned lines, a device chip arranging step of adhering and arranging a device chip in the groove formed in the groove forming step, and a dividing step of dividing the substrate on which the device chip is arranged in the groove along the division planned line into individual pieces. , in the groove forming step, the groove is continuously formed along a first planned dividing line extending in a first direction and straddling a second planned dividing line extending in a second direction intersecting the first direction. It is characterized by that.

[0010] Also, in the method for manufacturing a package device of the present invention, the planned division line includes a first planned division line extending in a direction parallel to the first direction and a second planned division line extending in a second direction intersecting the first direction. The groove forming step may form a groove in a region sandwiched between adjacent first planned division lines by bringing a cutting blade into contact with the substrate while rotating the cutting blade and relatively moving the cutting blade and the substrate in a direction parallel to the first planned division line.

[0011] Also, in the method for manufacturing a package device of the present invention, the groove forming step may further form a groove in a region sandwiched between adjacent second planned division lines by bringing a cutting blade into contact with the substrate while rotating the cutting blade and relatively moving the cutting blade and the substrate in a direction parallel to the second planned division line.

[0012] Further, the method for manufacturing a package device of the present invention may include a resin molding step of supplying a molding resin to the substrate to coat the device chip with the molding resin after the device chip disposing step.

[0013] Further, the method for manufacturing a package device of the present invention may include a molded resin grinding step of grinding and thinning the molding resin that coats the device chip after the resin molding step.

[0014] Further, the method for manufacturing a package device of the present invention may include a lamination step of laminating the substrate in a state where the device chip is adhered to the groove, coated with the molding resin, and the molding resin is thinned, and another substrate after the molded resin grinding step.

[0015] Also, in the method for manufacturing a package device of the present invention, the dividing step may include a cutting step of cutting the substrate along the planned division line by relatively moving a cutting blade and the substrate.

Advantages of the Invention

[0016] The invention of the present application can suppress the depth variation of the chip mounting region within the substrate surface.

Brief Description of the Drawings

[0017]

Figure 1

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Embodiments for Carrying Out the Invention

[0018] A mode (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the content described in the following embodiments. Further, the constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. Also, various omissions, substitutions, or changes in the configuration can be made without departing from the gist of the present invention.

[0019] 〔Embodiment〕 A method for manufacturing a package device 1 according to an embodiment of the present invention will be described with reference to the drawings. First, the configuration of the package device 1 of the embodiment will be described. FIG. 1 is a cross-sectional view schematically showing a configuration example of the package device 1 of the embodiment. As shown in FIG. 1, the package device 1 includes a substrate 2, a device chip 3, and a mold resin 4.

[0020] The substrate 2 shown in FIG. 1 is composed of, for example, silicon, sapphire (Al 2 O 3 ), gallium arsenide (GaAs), or silicon carbide (SiC), etc. The substrate 2 includes a groove 6 formed in a concave shape from the surface 5.

[0021] The device chip 3 is disposed inside the groove 6 formed in the substrate 2. The device chip 3 is adhered to the bottom surface 7 of the groove 6 by, for example, an adhesive adhered or applied to the device chip 3 or an adhesive applied to the bottom surface 7 of the groove 6. The device chip 3 includes electrodes. The device chip 3 is, for example, an integrated circuit such as an IC or LSI, an image sensor such as a CCD (Charge Coupled Device) or CMOS (Complementary Metal Oxide Semiconductor), or a passive component such as a capacitor or a resistor.

[0022] The mold resin 4 is composed of an insulating synthetic resin such as an epoxy resin, a silicone resin, a urethane resin, an unsaturated polyester resin, an acrylic urethane resin, or a polyimide resin. The mold resin 4 covers the device chip 3. In the embodiment, the mold resin 4 is filled between the side surface of the device chip 3 in the groove 6 and the substrate 2, covering the surface 5 of the substrate 2, the groove 6, the surface 8 and the side surface of the device chip 3. In the embodiment, the mold resin 4 is composed of a thermosetting resin. The mold resin 4 is supplied to the substrate 2 in a heated and softened state and cured to cover the device chip 3.

[0023] Next, a method for manufacturing the package device 1 according to the embodiment will be described. FIG. 2 is a flowchart showing the flow of the method for manufacturing the package device 1 according to the embodiment. As shown in FIG. 2, the method for manufacturing the package device 1 of the embodiment includes a groove formation step 101, a device chip arrangement step 102, a resin molding step 103, and a division step 104.

[0024] (Groove formation step 101) FIG. 3 is a perspective view showing an example of the wafer 10 to be processed in the groove formation step 101 shown in FIG. 2. As shown in FIG. 3, the wafer 10 is a wafer such as a disk-shaped semiconductor wafer including the substrate 2 or an optical device wafer. In the embodiment, the wafer 10 has a diameter of 300 mm. The wafer 10 (substrate 2) has a plurality of intersecting division planned lines 20 and a plurality of regions 23 sandwiched between adjacent division planned lines 20 on the surface 5.

[0025] In the embodiment, the division planned line 20 includes a first division planned line 21 and a second division planned line 22. The first division planned line 21 is a division planned line 20 extending in a direction parallel to the first direction 11. The first direction 11 is a direction within the horizontal surface 5 of the wafer 10.

[0026] The second planned division line 22 is a planned division line 20 extending in a direction parallel to the second direction 12. The second direction 12 is a direction intersecting the first direction 11 within the horizontal surface 5 of the wafer 10. In an embodiment, the second direction 12 is a direction orthogonal to the first direction 11. That is, the planned division lines 20 are set in a grid pattern on the surface 5 of the wafer 10 by the first planned division line 21 and the second planned division line 22.

[0027] The regions 23 are partitioned by the grid-like set planned division lines 20. In each region 23, a device chip 3 (see FIG. 1) is disposed in the device chip placement step 102 described later. The wafer 10 is divided along the planned division lines 20 in the division step 104 described later, and is individualized for each region 23 having an individual device chip 3, and is manufactured into a package device 1 (see FIG. 1). The individualized package device 1 is, in an embodiment, a square shape with a side length of 7 mm. Note that the package device 1 is, in an embodiment, a square shape, but may be a rectangular shape.

[0028] FIG. 4 is a perspective view showing an example of the groove formation step 101 shown in FIG. 2. FIG. 5 is a plan view of the wafer 10 showing a state of the groove formation step 101 shown in FIG. 2. FIG. 6 is a plan view of the wafer 10 showing a state subsequent to that of FIG. 5 in the groove formation step 101 shown in FIG. 2. The groove formation step 101 is a step of forming a groove 6 capable of accommodating the device chip 3 in a region 23 sandwiched between adjacent planned division lines 20. In an embodiment, a groove 61 having a depth of 100 μm and a width of 3 mm is formed in the wafer 10. The groove 6 includes a groove 61 extending in a direction parallel to the first direction 11 and a groove 62 extending in a direction parallel to the second direction 12. Hereinafter, after forming the groove 61 shown in FIGS. 5 and 6, the groove 62 shown in FIG. 6 will be formed for description, but only the groove 61 may be formed.

[0029] In the groove formation step 101 shown in FIG. 4, a groove 6 is formed in the surface 5 of the wafer 10 by cutting with a cutting device 30. In the following description, the X-axis direction is a direction in a horizontal plane. The Y-axis direction is a direction orthogonal to the X-axis direction in the horizontal plane. The cutting device 30 of the embodiment has a machining feed direction in the X-axis direction and an indexing feed direction in the Y-axis direction. The cutting device 30 includes a chuck table 31 having a holding surface 32, a cutting unit 33, a moving unit (not shown) that relatively moves the chuck table 31 and the cutting unit 33, and an imaging unit (not shown).

[0030] The cutting unit 33 includes a disk-shaped cutting blade 34, a spindle 35 that serves as a rotation axis of the cutting blade 34, and a mount flange 36 (see FIG. 11) that is attached to the spindle 35 and to which the cutting blade 34 is fixed. The cutting blade 34 and the spindle 35 have a rotation axis parallel to the holding surface 32 of the chuck table 31 that holds the wafer 10 to be cut. The cutting blade 34 is attached to the tip of the spindle 35.

[0031] In the groove formation step 101 shown in FIG. 4, first, the back surface 9 side of the wafer 10 is sucked and held on the holding surface 32 of the chuck table 31. Note that the wafer 10 may be supported from the back surface 9 side by an adhesive tape 90 (see FIGS. 8 and the like) attached to an annular frame and held on the holding surface 32 of the chuck table 31 through the adhesive tape 90.

[0032] In the groove formation step 101 shown in FIG. 4, next, alignment is performed between the cutting unit 33 and the wafer 10. Specifically, a moving unit (not shown) moves the chuck table 31 to a machining area below the cutting unit 33, and the wafer 10 is photographed and aligned by an imaging unit (not shown). Thereby, the first direction 11 of the wafer 10 is made to coincide with a direction parallel to the X-axis direction, which is the machining feed direction, and the machining point of the cutting blade 34 is aligned with a region 23 sandwiched between adjacent first division planned lines 21.

[0033] In the groove forming step 101 shown in FIG. 4, next, the supply of cutting fluid is started toward the surface 5 side of the wafer 10, and the cutting blade 34 is rotated and brought into contact with the wafer 10. Next, while relatively moving the chuck table 31 and the cutting blade 34 of the cutting unit 33 along the region 23 sandwiched between the adjacent first division planned lines 21 by a moving unit (not shown), the wafer 10 is cut until a groove 61 with a predetermined cutting amount (100 μm depth in the embodiment) is formed. As a result, as shown in FIG. 5, a groove 61 extending in a direction parallel to the first direction 11 is formed in the region 23 sandwiched between the first division planned lines 21.

[0034] In the groove forming step 101, next, the second direction 12 of the wafer 10 is made to coincide with a direction parallel to the X-axis direction which is the machining feed direction, and the machining point of the cutting blade 34 is aligned with the region 23 sandwiched between the adjacent second division planned lines 22. Next, the supply of cutting fluid is started toward the surface 5 side of the wafer 10, and the cutting blade 34 is rotated and brought into contact with the wafer 10. Next, while relatively moving the chuck table 31 and the cutting blade 34 of the cutting unit 33 along the region 23 sandwiched between the adjacent second division planned lines 22 by a moving unit (not shown), the wafer 10 is cut until a groove 62 with a predetermined cutting amount (100 μm depth in the embodiment) is formed. As a result, as shown in FIG. 6, a groove 62 extending in a direction parallel to the second direction 12 is formed in the region 23 sandwiched between the second division planned lines 22.

[0035] When forming the groove 6 by the cutting device 30 in the groove forming step 101 shown in FIG. 4, it may be cut in a plurality of passes with a cutting blade 34 having a width narrower than the width of the groove 6, or it may be cut in one pass with a cutting blade 34 having the same width as the width of the groove 6.

[0036] In the groove formation step 101, grooves 6 may be formed on the surface 5 of the wafer 10 by ablation processing using the laser processing apparatus 40. FIG. 7 is a perspective view showing another example of the groove formation step 101 shown in FIG. 2. In the laser processing apparatus 40 of the embodiment, the processing feed direction is the X-axis direction, and the indexing feed direction is the Y-axis direction. The laser processing apparatus 40 includes a chuck table 41 having a holding surface 42, a laser beam irradiation unit 43, a moving unit (not shown) that relatively moves the chuck table 41 and the laser beam irradiation unit 43, and an imaging unit 44.

[0037] In the groove formation step 101 shown in FIG. 7, first, the back surface 9 side of the wafer 10 is sucked and held on the holding surface 42 of the chuck table 41. Next, alignment is performed between the laser beam irradiation unit 43 and the wafer 10. Specifically, a moving unit (not shown) moves the chuck table 41 to the processing position, and the wafer 10 is imaged and aligned by an imaging unit (not shown). Thereby, the first direction 11 of the wafer 10 is made to coincide with a direction parallel to the X-axis direction, which is the processing feed direction, and the irradiation part of the laser beam irradiation unit 43 is aligned with the region 23 sandwiched between the adjacent first division planned lines 21.

[0038] In the groove formation step 101 shown in FIG. 7, next, while relatively moving the chuck table 41 with respect to the laser beam irradiation unit 43 by a moving unit (not shown), the laser beam 45 is irradiated with the condensing point positioned on the surface 5 of the wafer 10 or in the vicinity of the surface 5. The laser beam 45 is a laser beam having a wavelength that is absorptive with respect to the substrate 2. In the groove formation step 101, by irradiating the laser beam 45 with the condensing point positioned on the surface 5 of the wafer 10 or in the vicinity of the surface 5 along the region 23 sandwiched between the adjacent first division planned lines 21, a groove 61 extending in a direction parallel to the first direction 11 is formed in the region 23 sandwiched between the first division planned lines 21.

[0039] In the groove formation step 101 shown in FIG. 7 as well, after forming the groove 61, a groove 62 extending in a direction parallel to the second direction 12 may be formed. That is, the second direction 12 of the wafer 10 is made to coincide with a direction parallel to the X-axis direction which is the processing feed direction, and the irradiation part of the laser beam irradiation unit 43 is aligned with the region 23 sandwiched between the adjacent second division planned lines 22. While relatively moving the chuck table 41 with respect to the laser beam irradiation unit 43 by a moving unit (not shown), the laser beam 45 is irradiated with the condensing point positioned on the surface 5 of the wafer 10 or in the vicinity of the surface 5. In the groove formation step 101 shown in FIG. 7, by irradiating the laser beam 45 with the condensing point positioned on the surface 5 of the wafer 10 or in the vicinity of the surface 5 along the region 23 sandwiched between the adjacent second division planned lines 22, a groove 62 extending in a direction parallel to the second direction 12 is formed in the region 23 sandwiched between the second division planned lines 22.

[0040] (Device chip disposition step 102) FIG. 8 is a side view of a main part of the wafer 10 showing a state of the device chip disposition step 102 shown in FIG. 2 in a partial cross section. The device chip disposition step 102 adheres and disposes the device chip 3 in the groove 6 formed in the groove formation step 101. In the device chip disposition step 102, for example, first, an adhesive is applied to the back surface of the device chip 3. Next, the back surface side of the device chip 3 to which the adhesive is applied is adhered to the bottom surface 7 of the groove 6.

[0041] In the device chip disposition step 102, instead of applying an adhesive to the back surface of the device chip 3, an adhesive sheet may be attached. Also, in the device chip disposition step 102, for example, an adhesive may be applied to the bottom surface 7 of the groove 6 instead of the back surface of the device chip 3.

[0042] (Resin molding step 103) FIG. 9 is a side view showing a state of the resin molding step 103 shown in FIG. 2 in partial cross section. FIG. 10 is a side view of a main part of the wafer 10 showing a state after FIG. 9 of the resin molding step 103 shown in FIG. 2 in partial cross section. The resin molding step 103 is a step of supplying a molding resin 4 to the wafer 10 (substrate 2) and covering the device chip 3 with the molding resin 4 after the device chip disposition step 102.

[0043] In the resin molding step 103 shown in FIGS. 9 and 10, the device chip 3 is covered with the molding resin 4 by a compression molding machine 50. The compression molding machine 50 includes an upper mold 51 having a holding surface 52 and a lower mold 53 having a cavity 54 facing the holding surface 52.

[0044] As shown in FIG. 9, in the resin molding step 103, first, the back surface 9 side of the wafer 10 is fixed to the holding surface 52 of the upper mold 51. In the embodiment, the wafer 10 is fixed to the holding surface 52 of the upper mold 51 through an adhesive tape 90 that supports the wafer 10. Next, a predetermined amount of liquid molding resin 4 is filled into the cavity 54 of the lower mold 53. Next, the upper mold 51 is moved in the direction of the lower mold 53 to press the surface 5 side of the wafer 10 against the molding resin 4 in the cavity 54.

[0045] As shown in FIG. 10, by pressing the surface 5 side of the wafer 10 against the molding resin 4 in the cavity 54, the liquid molding resin 4 enters between the device chip 3 in the groove 6 in which the device chip 3 is accommodated from the surface 5 of the wafer 10 and is filled into the space on the side surface side of the device chip 3. Further, the liquid molding resin 4 is compressed and cured between the cavity 54 and the surface 5 of the wafer 10 by the application of pressure from the upper mold 51 and is fixed in a state of covering the device chip 3.

[0046] (Dividing step 104) FIG. 11 is a side view of a main part of a wafer 10 showing a state of the dividing step 104 shown in FIG. 2 in a partial cross section. The dividing step 104 is a step of dividing a wafer 10 (substrate 2) in which device chips 3 are disposed in grooves 6 along a dividing line 20 to individualize them.

[0047] In the dividing step 104 shown in FIG. 11, the wafer 10 is divided by cutting with a cutting device 30. That is, the dividing step 104 includes a cutting step of cutting the wafer 10 along the dividing line 20 by relatively moving a cutting blade 34 and the substrate 2. The cutting device 30 may be the same or similar device as the device used in the groove forming step 101 shown in FIG. 4. In the dividing step 104, a cutting blade 34 having a width narrower than that of the groove 6 is used.

[0048] In the dividing step 104, first, the back surface 9 side of the wafer 10 is sucked and held on the holding surface 32 of the chuck table 31. The wafer 10 is preferably supported from the back surface 9 side by an adhesive tape 90 attached to an annular frame and held on the holding surface 32 of the chuck table 31 through the adhesive tape 90.

[0049] In the dividing step 104, next, alignment between the cutting unit 33 and the wafer 10 is performed. Specifically, a moving unit (not shown) moves the chuck table 31 to a processing area below the cutting unit 33, and images the wafer 10 with an imaging unit (not shown) to perform alignment, thereby aligning the processing point of the cutting blade 34 with the dividing line 20 of the wafer 10.

[0050] In the dividing step 104, next, the supply of cutting water is started toward the surface 5 side of the wafer 10 (substrate 2), and the cutting blade 34 is rotated and brought into contact with the wafer 10. Next, while relatively moving the chuck table 31 and the cutting blade 34 of the cutting unit 33 along the dividing line 20 by a moving unit (not shown), the wafer 10 is cut until reaching the back surface 9 side, and the wafer 10 is divided along the dividing line 20.

[0051] By dividing the wafer 10 (substrate 2) along all the planned dividing lines 20, the wafer 10 is separated into individual pieces for each device chip 3 and manufactured into the package device 1. After the wafer 10 is divided into the package device 1, in the pick-up process, for example, the package device 1 is picked up from the sticking tape 90 by a well-known picker.

[0052] As described above, in the manufacturing method of the package device 1 of the embodiment, the device chip 3 is mounted in the groove 6 formed in the wafer 10 (substrate 2). As a method of forming the groove 6, by performing cutting with the cutting device 30 or ablation with the laser processing device 40, the TTV can be improved compared with etching, and further, the depth variation of the device chip 3 mounting region in the plane of the substrate 2 can be reduced. In addition, since there is no need to form a mask for etching, the process can be reduced, the processing time can be shortened, and the cost and man-hours can be reduced.

[0053] In the groove forming step 101 by the cutting device 30 shown in FIG. 4 in the above embodiment, for example, when processing 44 lines at 30 mm / sec, the required time is about 10 minutes. On the other hand, when forming a groove 6 with a depth of 100 μm by etching, for example, the etching rate is 7 μm / min and the required time is about 15 minutes. In etching, the processing time increases as the removal area is wider and deeper, but in groove processing by cutting, the processing time does not change even if the depth varies. Therefore, the groove forming step 101 of the embodiment can further shorten the processing time compared with etching.

[0054] Note that the present invention is not limited to the above embodiment. That is, various modifications can be made and implemented without departing from the gist of the present invention.

[0055] For example, in the groove formation step 101, when forming the groove 6 by the laser beam 45, the laser processing apparatus 40 may include an optical system that scans the laser beam 45 with a polygon mirror. Thereby, the TTV on the bottom surface 7 of the groove 6 can be improved.

[0056] In addition, in the groove formation step 101, in the embodiment, one groove 6 is formed in the region 23 sandwiched between the adjacent division planned lines 20. However, in the present disclosure, a plurality of grooves 6 may be formed in the region 23 sandwiched between the adjacent division planned lines 20. In this case, after being divided and individualized in the division step 104, each of the package devices 1 has a plurality of grooves 6. In this case, for example, at least one device chip 3 is preferably disposed in each groove 6.

[0057] In the device chip disposition step 102, in the embodiment shown in FIG. 8, the device chip 3 is adhered into the groove 6 from above with the surface 5 side of the wafer 10 (substrate 2) as the upper surface. However, in the present invention, the wafer 10 may be adhered so as to cover the device chip 3 from above.

[0058] In the resin molding step 103, in the embodiment, a predetermined amount of liquid mold resin 4 is filled into the cavity 54 of the lower mold 53, and the upper mold 51 is moved in the direction of the lower mold 53 to press the surface 5 side of the wafer 10 against the mold resin 4 in the cavity 54. However, the present invention is not limited to this. For example, a predetermined amount of granular mold resin 4 may be placed in the cavity 54 of the lower mold 53, the mold resin 4 in the cavity 54 may be melted, and then the upper mold 51 may be moved in the direction of the lower mold 53 to press the surface 5 side of the wafer 10 against the mold resin 4 in the cavity 54. Further, it is not limited to the so-called face-down method as described above. In a state where the wafer 10 is placed on a flat lower mold, the mold resin 4 is supplied onto the surface 5 of the wafer 10, and the upper mold having a cavity facing the surface 5 of the wafer 10 is moved from above and pressed against the lower mold side. The mold resin 4 may be compressed and cured by the so-called face-up method.

[0059] In addition, in the embodiment shown in FIG. 11, the dividing step 104 divides the substrate 2 by a full cut using the cutting blade 34. However, in the present invention, the substrate 2 may be divided by grinding the back surface 9 of the wafer 10 after a half cut. Further, instead of forming a cut by a half cut using the cutting blade 34, a modified layer serving as a dividing starting point may be formed by a laser beam having permeability with respect to the wafer 10.

[0060] That is, the dividing step 104 may include a grinding step of grinding and thinning the back surface 9 side of the wafer 10 (substrate 2). Further, a grinding step of grinding and thinning the back surface 9 side of the wafer 10 (substrate 2) before performing the dividing step 104 may be included. The grinding step may be performed before or after performing the groove forming step 101.

[0061] 〔Modification Example〕 Next, a method for manufacturing the package device 1 according to the modification example will be described. FIG. 12 is a flowchart showing the flow of the method for manufacturing the package device 1 according to the modification example. The method for manufacturing the package device 1 of the modification example includes, as shown in FIG. 12, a groove forming step 201, a device chip disposing step 202, a resin molding step 203, a molded resin grinding step 204, a lamination step 205, and a dividing step 206. Note that the groove forming step 201, the device chip disposing step 202, the resin molding step 203, and the dividing step 206 of the modification example are the same as the groove forming step 101, the device chip disposing step 102, the resin molding step 103, and the dividing step 104 of the embodiment, and thus the description thereof will be omitted.

[0062] (Molded Resin Grinding Step 204) FIG. 13 is a side view showing an example of the molded resin grinding step 204 shown in FIG. 12. The molded resin grinding step 204 is a step of grinding and thinning the molded resin 4 covering the device chip 3 after the resin molding step 203.

[0063] In the mold resin grinding step 204 shown in FIG. 13, the mold resin 4 covering the surface 5 of the wafer 10 (substrate 2) is ground by the grinding process using the grinding device 70. The grinding device 70 includes a chuck table 71 having a holding surface 72 and a grinding unit 73. The grinding unit 73 includes a spindle 74 which is a rotary shaft member, a wheel base 75 attached to the lower end of the spindle 74, and a grinding wheel 76 mounted on the lower surface of the wheel base 75. The wheel base 75 rotates about a rotation axis parallel to the axis of the chuck table 71.

[0064] In the mold resin grinding step 204, first, the back surface 9 side of the wafer 10 is sucked and held on the holding surface 72 of the chuck table 71. Next, with the chuck table 71 rotated about its axis, the wheel base 75 is rotated about its axis. While supplying grinding water to the machining position, the grinding wheel 76 mounted on the lower surface of the wheel base 75 is brought closer to the chuck table 71 at a predetermined feed rate, thereby grinding the mold resin 4 covering the surface 5 of the wafer 10 from the surface side with the grinding wheel 76. Thereby, the mold resin 4 is thinned.

[0065] Note that after the mold resin grinding step 204 and before the lamination step 205 described later, the back surface 9 side of the wafer 10 (substrate 2) may be ground to thin the substrate 2. In this case, with the surface side of the ground mold resin 4 sucked and held on the holding surface 72 of the chuck table 71, the back surface 9 side of the wafer 10 is ground.

[0066] (Lamination step 205) The lamination step 205 is a step of laminating the wafer 10 described above, which is a substrate 2 in a state where the device chip 3 is adhered to the groove 6, coated with the mold resin 4, and the mold resin 4 is thinned, and another substrate after the mold resin grinding step 204. In the present invention, as the other substrate, another wafer configured similarly to the wafer 10 may be laminated on the wafer 10, or a carrier wafer or the like may be laminated. When a carrier wafer, which is another substrate, is laminated (attached) to the wafer 10, it is desirable to form a silicon through electrode, a rewiring layer, etc. on the wafer 10 and the carrier wafer by a well-known method after the lamination (attachment).

[0067] Thus, the method for manufacturing a package device of the present invention is also applicable to a package device in which a substrate and a device chip are laminated.

Explanation of reference numerals

[0068] 1 Package device 2 Substrate 3 Device chip 4 Mold resin 6, 61, 62 Groove 10 Wafer 11 First direction 12 Second direction 20 Predetermined division line 21 First predetermined division line 22 Second predetermined division line 23 Region 34 Cutting blade 101, 201 Groove formation step 102, 202 Device chip arrangement step 103, 203 Resin molding step 104, 206 Division step 204 Mold resin grinding step 205 Lamination step

Claims

1. A method for manufacturing a package device, comprising: a groove forming step of forming, on a substrate having a plurality of intersecting planned division lines, a groove capable of accommodating a device chip in a region sandwiched between adjacent planned division lines; a device chip disposing step of adhering and disposing a device chip in the groove formed in the groove forming step; a dividing step of dividing the substrate having the device chip disposed in the groove along the planned division lines to form individual pieces; characterized in that: in the groove forming step, the groove is continuously formed along a first planned division line extending in a first direction and straddling a second planned division line extending in a second direction intersecting the first direction; a method for manufacturing a package device.

2. The planned division lines include a first planned division line extending in a direction parallel to the first direction and a second planned division line extending in a second direction intersecting the first direction, the groove forming step is characterized in that a cutting blade is brought into contact with the substrate while rotating, and the cutting blade and the substrate are relatively moved in a direction parallel to the first planned division line, thereby forming a groove in a region sandwiched between adjacent first planned division lines; The method for manufacturing a package device according to Claim 1.

3. The groove forming step is characterized in that a cutting blade is brought into contact with the substrate while rotating, and the cutting blade and the substrate are relatively moved in a direction parallel to the second planned division line, thereby further forming a groove in a region sandwiched between adjacent second planned division lines; The method for manufacturing a package device according to Claim 2.

4. characterized in that after the device chip disposing step, a resin molding step of supplying a molding resin to the substrate to coat the device chip with the molding resin is provided; The method for manufacturing a package device according to any one of Claims 1 to 3.

5. characterized in that after the resin molding step, a molding resin grinding step of grinding and thinning the molding resin covering the device chip is provided; The method for manufacturing a package device according to Claim 4.

6. characterized in that after the molding resin grinding step, a laminating step of laminating the substrate in a state where the device chip is adhered to the groove, covered with the molding resin, and the molding resin is thinned, and another substrate is provided; A method for manufacturing a package device according to claim 5.

7. The dividing step includes a cutting step of cutting the substrate along the planned dividing line by relatively moving a cutting blade and the substrate. A method for manufacturing a package device according to any one of claims 1 to 6.

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